HK1042378B - 碳化硅橫向場效應晶體管和製造方法及其使用 - Google Patents

碳化硅橫向場效應晶體管和製造方法及其使用

Info

Publication number
HK1042378B
HK1042378B HK02104058.9A HK02104058A HK1042378B HK 1042378 B HK1042378 B HK 1042378B HK 02104058 A HK02104058 A HK 02104058A HK 1042378 B HK1042378 B HK 1042378B
Authority
HK
Hong Kong
Prior art keywords
layer
transistor
region layer
sic
gate electrode
Prior art date
Application number
HK02104058.9A
Other languages
English (en)
Other versions
HK1042378A1 (en
Inventor
克裡斯托弗‧哈裡
安德雷‧康斯坦丁歐夫
Original Assignee
科銳瑞典股份公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SE9900358A external-priority patent/SE9900358D0/xx
Application filed by 科銳瑞典股份公司 filed Critical 科銳瑞典股份公司
Publication of HK1042378A1 publication Critical patent/HK1042378A1/xx
Publication of HK1042378B publication Critical patent/HK1042378B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
HK02104058.9A 1999-02-03 2002-05-31 碳化硅橫向場效應晶體管和製造方法及其使用 HK1042378B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9900358A SE9900358D0 (sv) 1999-02-03 1999-02-03 A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor
PCT/SE2000/000192 WO2000046850A1 (en) 1999-02-03 2000-02-01 A LATERAL FIELD EFFECT TRANSISTOR OF SiC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR

Publications (2)

Publication Number Publication Date
HK1042378A1 HK1042378A1 (en) 2002-08-09
HK1042378B true HK1042378B (zh) 2005-02-25

Family

ID=20414342

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02104058.9A HK1042378B (zh) 1999-02-03 2002-05-31 碳化硅橫向場效應晶體管和製造方法及其使用

Country Status (8)

Country Link
EP (1) EP1163696B1 (zh)
JP (1) JP5038556B2 (zh)
KR (1) KR100629020B1 (zh)
CN (1) CN1146969C (zh)
AT (1) ATE476752T1 (zh)
CA (1) CA2361752C (zh)
DE (1) DE60044776D1 (zh)
HK (1) HK1042378B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5623898B2 (ja) * 2010-12-21 2014-11-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102017102127B4 (de) * 2017-02-03 2023-03-09 Infineon Technologies Ag Verfahren zum Herstellen von Halbleitervorrichtungen unter Verwendung einer Epitaxie und Halbleitervorrichtungen mit einer lateralen Struktur
CN116387348B (zh) * 2023-04-27 2023-10-27 南京第三代半导体技术创新中心有限公司 一种精确控制短沟道的平面型SiC MOSFET及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
JP3471823B2 (ja) * 1992-01-16 2003-12-02 富士電機株式会社 絶縁ゲート型半導体装置およびその製造方法
US5569937A (en) * 1995-08-28 1996-10-29 Motorola High breakdown voltage silicon carbide transistor
SE9601178D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd A field controlled semiconductor device of SiC and a method for production thereof

Also Published As

Publication number Publication date
EP1163696A1 (en) 2001-12-19
JP2002536832A (ja) 2002-10-29
DE60044776D1 (de) 2010-09-16
KR100629020B1 (ko) 2006-09-27
CA2361752A1 (en) 2000-08-10
EP1163696B1 (en) 2010-08-04
CN1146969C (zh) 2004-04-21
JP5038556B2 (ja) 2012-10-03
HK1042378A1 (en) 2002-08-09
KR20010094754A (ko) 2001-11-01
ATE476752T1 (de) 2010-08-15
CN1339173A (zh) 2002-03-06
CA2361752C (en) 2011-05-10

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