ATE403144T1 - Verfahren und anordnung zur detektion von partikeln auf halbleitern - Google Patents

Verfahren und anordnung zur detektion von partikeln auf halbleitern

Info

Publication number
ATE403144T1
ATE403144T1 AT04726541T AT04726541T ATE403144T1 AT E403144 T1 ATE403144 T1 AT E403144T1 AT 04726541 T AT04726541 T AT 04726541T AT 04726541 T AT04726541 T AT 04726541T AT E403144 T1 ATE403144 T1 AT E403144T1
Authority
AT
Austria
Prior art keywords
semiconductors
particulate
semiconductor
contaminant
defects
Prior art date
Application number
AT04726541T
Other languages
English (en)
Inventor
Victor Higgs
Original Assignee
Aoti Operating Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aoti Operating Co Inc filed Critical Aoti Operating Co Inc
Application granted granted Critical
Publication of ATE403144T1 publication Critical patent/ATE403144T1/de

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/6489Photoluminescence of semiconductors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/94Investigating contamination, e.g. dust

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Measurement Of Velocity Or Position Using Acoustic Or Ultrasonic Waves (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
AT04726541T 2003-04-09 2004-04-08 Verfahren und anordnung zur detektion von partikeln auf halbleitern ATE403144T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0308182.5A GB0308182D0 (en) 2003-04-09 2003-04-09 Detection method and apparatus

Publications (1)

Publication Number Publication Date
ATE403144T1 true ATE403144T1 (de) 2008-08-15

Family

ID=9956474

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04726541T ATE403144T1 (de) 2003-04-09 2004-04-08 Verfahren und anordnung zur detektion von partikeln auf halbleitern

Country Status (9)

Country Link
US (1) US7589834B2 (de)
EP (1) EP1611431B1 (de)
JP (1) JP2006522929A (de)
KR (1) KR20060015497A (de)
AT (1) ATE403144T1 (de)
DE (1) DE602004015435D1 (de)
GB (1) GB0308182D0 (de)
TW (1) TW200506343A (de)
WO (1) WO2004090516A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9618897D0 (en) 1996-09-10 1996-10-23 Bio Rad Micromeasurements Ltd Micro defects in silicon wafers
GB0308182D0 (en) 2003-04-09 2003-05-14 Aoti Operating Co Inc Detection method and apparatus
US20070000434A1 (en) * 2005-06-30 2007-01-04 Accent Optical Technologies, Inc. Apparatuses and methods for detecting defects in semiconductor workpieces
TWI439684B (zh) 2005-07-06 2014-06-01 Nanometrics Inc 具自晶圓或其他工件特定材料層所發射光致發光信號優先偵測之光致發光成像
TWI391645B (zh) 2005-07-06 2013-04-01 Nanometrics Inc 晶圓或其他工作表面下污染物及缺陷非接觸測量之差分波長光致發光
US20070008526A1 (en) * 2005-07-08 2007-01-11 Andrzej Buczkowski Apparatus and method for non-contact assessment of a constituent in semiconductor workpieces
CN100480683C (zh) * 2005-12-28 2009-04-22 中国科学院半导体研究所 探测GaAsN半导体合金材料能带结构高阶临界点的方法
US20070176119A1 (en) * 2006-01-30 2007-08-02 Accent Optical Technologies, Inc. Apparatuses and methods for analyzing semiconductor workpieces
FR2899380B1 (fr) * 2006-03-31 2008-08-29 Soitec Sa Procede de revelation de defauts cristallins dans un substrat massif.
US20070247165A1 (en) * 2006-04-25 2007-10-25 Applied Materials, Inc. Wafer backside particle detection for track tools
CN104022056B (zh) * 2008-03-31 2017-04-12 Bt成像股份有限公司 用于晶片成像及处理的方法和设备
DE102008044881A1 (de) * 2008-08-29 2010-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Messverfahren für eine Halbleiterstruktur
TWI522609B (zh) * 2010-01-04 2016-02-21 Bt映像私人有限公司 用於分析半導體的方法與系統以及執行該方法與操作該系統的製造物件
DE102010011066B4 (de) * 2010-03-11 2020-10-22 Pi4_Robotics Gmbh Photovoltaikmodul-, oder Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsverfahren und Photovoltaikmodul- oder, Photovoltaikzellen- oder Halbleiterbauelement-Identifikationsvorrichtung
US8629411B2 (en) 2010-07-13 2014-01-14 First Solar, Inc. Photoluminescence spectroscopy
JP5682858B2 (ja) * 2011-05-20 2015-03-11 株式会社Sumco シリコンウェーハの評価方法および製造方法
NL2010189A (en) * 2012-02-07 2013-08-08 Asml Holding Nv Methods and apparatuses for detecting contaminant particles.
JP2017062263A (ja) * 2012-03-16 2017-03-30 株式会社堀場製作所 試料分析装置及び試料分析プログラム
CN109387494B (zh) 2012-07-06 2023-01-24 Bt成像股份有限公司 检查半导体材料的方法与分析半导体材料的方法和***
KR101531667B1 (ko) * 2014-05-30 2015-06-26 국민대학교산학협력단 게이트-드레인 및 게이트-소스의 커패시턴스-전압 특성을 이용한 저온 다결정 실리콘 박막 트랜지스터의 결정립 경계위치를 추적하는 장치 및 방법
US9885671B2 (en) 2014-06-09 2018-02-06 Kla-Tencor Corporation Miniaturized imaging apparatus for wafer edge
US9645097B2 (en) 2014-06-20 2017-05-09 Kla-Tencor Corporation In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning
US10018565B2 (en) * 2015-05-04 2018-07-10 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging with optical filtering
US10551320B2 (en) * 2017-01-30 2020-02-04 Kla-Tencor Corporation Activation of wafer particle defects for spectroscopic composition analysis
TWI662273B (zh) * 2018-08-20 2019-06-11 友達晶材股份有限公司 缺陷檢測設備及缺陷檢測方法
CN113782465B (zh) * 2021-11-11 2022-02-18 西安奕斯伟材料科技有限公司 用于检测晶圆表面金属的方法
EP4390365A1 (de) * 2022-12-23 2024-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und system zum prüfen einer oberfläche eines prüflings

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841927A (en) * 1972-11-10 1974-10-15 Owens Illinois Inc Aluminum metaphosphate source body for doping silicon
US3998668A (en) * 1973-12-21 1976-12-21 Owens-Illinois, Inc. Aluminum metaphosphate dopant sources
US4246793A (en) 1979-02-08 1981-01-27 Battelle Development Corporation Nondestructive testing
US4511800A (en) * 1983-03-28 1985-04-16 Rca Corporation Optical reflectance method for determining the surface roughness of materials in semiconductor processing
US4740694A (en) 1985-06-07 1988-04-26 Hitachi, Ltd. Method and apparatus for analyzing positron extinction and electron microscope having said apparatus
US4978862A (en) 1988-07-13 1990-12-18 Vti, Inc. Method and apparatus for nondestructively measuring micro defects in materials
US5202744A (en) 1988-07-29 1993-04-13 Louis Thomas A Electro-optical measuring instruments
US5244820A (en) * 1990-03-09 1993-09-14 Tadashi Kamata Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
CA2062134C (en) 1991-05-31 1997-03-25 Ibm Heteroepitaxial layers with low defect density and arbitrary network parameter
US5539514A (en) * 1991-06-26 1996-07-23 Hitachi, Ltd. Foreign particle inspection apparatus and method with front and back illumination
US6288780B1 (en) 1995-06-06 2001-09-11 Kla-Tencor Technologies Corp. High throughput brightfield/darkfield wafer inspection system using advanced optical techniques
AU736340B2 (en) * 1996-04-25 2001-07-26 Genicon Sciences Corporation Analyte assay using particulate labels
GB9618897D0 (en) * 1996-09-10 1996-10-23 Bio Rad Micromeasurements Ltd Micro defects in silicon wafers
US6251754B1 (en) * 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method
TW429309B (en) 1997-09-04 2001-04-11 Komatsu Denshi Kinzoku Kk Apparatus and a method for measuring a density of defects existing in a semiconductor wafer and an apparatus and a method for measuring an inherent scattering intensity of defects existing in a semiconductor wafer
US6256092B1 (en) 1997-11-28 2001-07-03 Hitachi, Ltd. Defect inspection apparatus for silicon wafer
WO1999034386A1 (en) 1997-12-31 1999-07-08 Telcordia Technologies, Inc. Fiber-optics based micro-photoluminescence system
JP3375876B2 (ja) 1998-02-06 2003-02-10 株式会社日立製作所 結晶欠陥計測方法及び結晶欠陥計測装置
JPH11237345A (ja) 1998-02-24 1999-08-31 Hitachi Ltd 表面計測装置
JPH11274257A (ja) 1998-03-18 1999-10-08 Shin Etsu Handotai Co Ltd 半導体結晶の欠陥評価方法
JPH11354599A (ja) 1998-06-09 1999-12-24 Memc Kk シリコンウェーハの結晶欠陥の検査方法、および同方法に使用する結晶欠陥検査装置
JP3899715B2 (ja) 1998-12-24 2007-03-28 株式会社Sumco シリコンウェーハ表面の検査方法
US7306951B1 (en) * 1999-06-08 2007-12-11 Midwest Research Institute Method and apparatus for determining diffusible hydrogen concentrations
US7332344B2 (en) 1999-12-01 2008-02-19 Photonic Research Systems Limited Luminescence assays
US6317216B1 (en) * 1999-12-13 2001-11-13 Brown University Research Foundation Optical method for the determination of grain orientation in films
US6429968B1 (en) 2000-03-09 2002-08-06 Agere Systems Guardian Corp Apparatus for photoluminescence microscopy and spectroscopy
US6462817B1 (en) 2000-05-12 2002-10-08 Carlos Strocchia-Rivera Method of monitoring ion implants by examination of an overlying masking material
US6534774B2 (en) 2000-09-08 2003-03-18 Mitsubishi Materials Silicon Corporation Method and apparatus for evaluating the quality of a semiconductor substrate
US6950196B2 (en) 2000-09-20 2005-09-27 Kla-Tencor Technologies Corp. Methods and systems for determining a thickness of a structure on a specimen and at least one additional property of the specimen
EP1323188A1 (de) 2000-10-06 2003-07-02 AOTI Operating Company, Inc. Verfahren zur detektion von metallkontamination auf einer oberfläche
US6630996B2 (en) 2000-11-15 2003-10-07 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
GB0107618D0 (en) 2001-03-27 2001-05-16 Aoti Operating Co Inc Detection and classification of micro-defects in semi-conductors
US6628111B2 (en) * 2001-04-24 2003-09-30 General Electric Company Method and apparatus for corrosion sensing
US6965895B2 (en) 2001-07-16 2005-11-15 Applied Materials, Inc. Method and apparatus for analyzing manufacturing data
JP2003045928A (ja) * 2001-07-31 2003-02-14 Shin Etsu Handotai Co Ltd 半導体シリコンウェーハ中のCu汚染評価方法
DE10141103B4 (de) * 2001-08-22 2007-01-18 Schott Ag Verfahren zur Herstellung optischer Gläser und Farbgläser bei niederen Temperaturen
US7245696B2 (en) 2002-05-29 2007-07-17 Xradia, Inc. Element-specific X-ray fluorescence microscope and method of operation
GB0216815D0 (en) 2002-07-19 2002-08-28 Aoti Operating Co Inc Detection method and apparatus
GB0308182D0 (en) 2003-04-09 2003-05-14 Aoti Operating Co Inc Detection method and apparatus
US6893936B1 (en) 2004-06-29 2005-05-17 International Business Machines Corporation Method of Forming strained SI/SIGE on insulator with silicon germanium buffer
JP4755855B2 (ja) 2005-06-13 2011-08-24 株式会社東芝 半導体ウェーハの検査方法
US20070000434A1 (en) 2005-06-30 2007-01-04 Accent Optical Technologies, Inc. Apparatuses and methods for detecting defects in semiconductor workpieces
TWI439684B (zh) 2005-07-06 2014-06-01 Nanometrics Inc 具自晶圓或其他工件特定材料層所發射光致發光信號優先偵測之光致發光成像
TWI391645B (zh) 2005-07-06 2013-04-01 Nanometrics Inc 晶圓或其他工作表面下污染物及缺陷非接觸測量之差分波長光致發光
US20070008526A1 (en) 2005-07-08 2007-01-11 Andrzej Buczkowski Apparatus and method for non-contact assessment of a constituent in semiconductor workpieces
US20070176119A1 (en) 2006-01-30 2007-08-02 Accent Optical Technologies, Inc. Apparatuses and methods for analyzing semiconductor workpieces

Also Published As

Publication number Publication date
US20060262296A1 (en) 2006-11-23
KR20060015497A (ko) 2006-02-17
EP1611431B1 (de) 2008-07-30
EP1611431A1 (de) 2006-01-04
WO2004090516A1 (en) 2004-10-21
JP2006522929A (ja) 2006-10-05
US7589834B2 (en) 2009-09-15
TW200506343A (en) 2005-02-16
DE602004015435D1 (de) 2008-09-11
GB0308182D0 (en) 2003-05-14

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