ATE394794T1 - Ge kanal-heterostruktur mit hoher geschwindigkeit für feldeffektanordnungen - Google Patents

Ge kanal-heterostruktur mit hoher geschwindigkeit für feldeffektanordnungen

Info

Publication number
ATE394794T1
ATE394794T1 AT00914903T AT00914903T ATE394794T1 AT E394794 T1 ATE394794 T1 AT E394794T1 AT 00914903 T AT00914903 T AT 00914903T AT 00914903 T AT00914903 T AT 00914903T AT E394794 T1 ATE394794 T1 AT E394794T1
Authority
AT
Austria
Prior art keywords
channel
mobility
field effect
low temperatures
compressively strained
Prior art date
Application number
AT00914903T
Other languages
English (en)
Inventor
Jack Chu
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE394794T1 publication Critical patent/ATE394794T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
AT00914903T 1999-03-12 2000-03-11 Ge kanal-heterostruktur mit hoher geschwindigkeit für feldeffektanordnungen ATE394794T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12429999P 1999-03-12 1999-03-12

Publications (1)

Publication Number Publication Date
ATE394794T1 true ATE394794T1 (de) 2008-05-15

Family

ID=22414018

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00914903T ATE394794T1 (de) 1999-03-12 2000-03-11 Ge kanal-heterostruktur mit hoher geschwindigkeit für feldeffektanordnungen

Country Status (9)

Country Link
EP (1) EP1169737B1 (de)
JP (2) JP3974329B2 (de)
KR (1) KR100441469B1 (de)
CN (1) CN1331240C (de)
AT (1) ATE394794T1 (de)
DE (1) DE60038793D1 (de)
MY (1) MY127672A (de)
TW (1) TW477025B (de)
WO (1) WO2000054338A1 (de)

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US6841457B2 (en) * 2002-07-16 2005-01-11 International Business Machines Corporation Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion
WO2004019391A2 (en) * 2002-08-23 2004-03-04 Amberwave Systems Corporation Semiconductor heterostructures having reduced dislocation pile-ups and related methods
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US6855963B1 (en) * 2003-08-29 2005-02-15 International Business Machines Corporation Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate
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US20060011906A1 (en) * 2004-07-14 2006-01-19 International Business Machines Corporation Ion implantation for suppression of defects in annealed SiGe layers
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US7897480B2 (en) 2007-04-23 2011-03-01 International Business Machines Corporation Preparation of high quality strained-semiconductor directly-on-insulator substrates
JP2010219249A (ja) * 2009-03-16 2010-09-30 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
KR101087939B1 (ko) 2009-06-17 2011-11-28 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
US8283653B2 (en) 2009-12-23 2012-10-09 Intel Corporation Non-planar germanium quantum well devices
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US8710490B2 (en) * 2012-09-27 2014-04-29 Intel Corporation Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
US8748940B1 (en) 2012-12-17 2014-06-10 Intel Corporation Semiconductor devices with germanium-rich active layers and doped transition layers
GB2544190B (en) * 2012-12-17 2017-10-18 Intel Corp Semicoductor devices with germanium-rich active layers & doped transition layers
US9136343B2 (en) 2013-01-24 2015-09-15 Intel Corporation Deep gate-all-around semiconductor device having germanium or group III-V active layer
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CN105244320A (zh) * 2015-08-28 2016-01-13 西安电子科技大学 基于SOI的应变Ge沟道倒梯形栅CMOS集成器件及制备方法
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Also Published As

Publication number Publication date
JP4912123B2 (ja) 2012-04-11
JP2002539613A (ja) 2002-11-19
TW477025B (en) 2002-02-21
JP3974329B2 (ja) 2007-09-12
WO2000054338A1 (en) 2000-09-14
MY127672A (en) 2006-12-29
DE60038793D1 (de) 2008-06-19
EP1169737B1 (de) 2008-05-07
JP2007165867A (ja) 2007-06-28
CN1343374A (zh) 2002-04-03
EP1169737A1 (de) 2002-01-09
KR20010102557A (ko) 2001-11-15
CN1331240C (zh) 2007-08-08
KR100441469B1 (ko) 2004-07-23

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