ATE360260T1 - Methoden zur herstellung von kondensatorelektroden und kondensatorkonstruktionen - Google Patents
Methoden zur herstellung von kondensatorelektroden und kondensatorkonstruktionenInfo
- Publication number
- ATE360260T1 ATE360260T1 AT02763466T AT02763466T ATE360260T1 AT E360260 T1 ATE360260 T1 AT E360260T1 AT 02763466 T AT02763466 T AT 02763466T AT 02763466 T AT02763466 T AT 02763466T AT E360260 T1 ATE360260 T1 AT E360260T1
- Authority
- AT
- Austria
- Prior art keywords
- capacitor
- methods
- constructions
- making
- precursor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 238000010276 construction Methods 0.000 abstract 3
- 239000002243 precursor Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
- Chemical Vapour Deposition (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/932,236 US20030036242A1 (en) | 2001-08-16 | 2001-08-16 | Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE360260T1 true ATE360260T1 (de) | 2007-05-15 |
Family
ID=25461998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02763466T ATE360260T1 (de) | 2001-08-16 | 2002-08-15 | Methoden zur herstellung von kondensatorelektroden und kondensatorkonstruktionen |
Country Status (11)
Country | Link |
---|---|
US (5) | US20030036242A1 (de) |
EP (1) | EP1417701B1 (de) |
JP (1) | JP2005526377A (de) |
KR (2) | KR100632614B1 (de) |
CN (1) | CN100521086C (de) |
AT (1) | ATE360260T1 (de) |
AU (1) | AU2002327474A1 (de) |
DE (1) | DE60219635T2 (de) |
SG (1) | SG146440A1 (de) |
TW (1) | TW559982B (de) |
WO (1) | WO2003017341A2 (de) |
Families Citing this family (11)
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KR100390849B1 (ko) * | 2001-06-30 | 2003-07-12 | 주식회사 하이닉스반도체 | 하프늄산화막을 구비하는 캐패시터의 제조 방법 |
KR100408726B1 (ko) * | 2001-12-10 | 2003-12-11 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
JP2005314713A (ja) * | 2004-04-27 | 2005-11-10 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | ルテニウム膜またはルテニウム酸化物膜の製造方法 |
KR100587686B1 (ko) * | 2004-07-15 | 2006-06-08 | 삼성전자주식회사 | 질화 티타늄막 형성방법 및 이를 이용한 커패시터 제조방법 |
US7720213B2 (en) | 2004-12-30 | 2010-05-18 | Alcatel Lucent | Parameter dependent ring tones |
US7713876B2 (en) * | 2005-09-28 | 2010-05-11 | Tokyo Electron Limited | Method for integrating a ruthenium layer with bulk copper in copper metallization |
US8404306B2 (en) * | 2006-09-22 | 2013-03-26 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés George Claude | Method for the deposition of a ruthenium containing film |
KR101483318B1 (ko) * | 2007-02-21 | 2015-01-16 | 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 기판상에 루테늄계 막을 형성하는 방법 |
WO2011106072A2 (en) | 2010-02-23 | 2011-09-01 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Use of ruthenium tetroxide as a precursor and reactant for thin film depositions |
WO2016111833A1 (en) | 2015-01-09 | 2016-07-14 | Applied Materials, Inc. | Direct deposition of nickel silicide nanowire |
CN111655899A (zh) | 2018-02-12 | 2020-09-11 | 默克专利有限公司 | 使用无氧共反应物气相沉积钌的方法 |
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-
2001
- 2001-08-16 US US09/932,236 patent/US20030036242A1/en not_active Abandoned
-
2002
- 2002-05-07 US US10/140,608 patent/US20030036210A1/en not_active Abandoned
- 2002-08-15 KR KR1020067006025A patent/KR100632614B1/ko not_active IP Right Cessation
- 2002-08-15 WO PCT/US2002/026191 patent/WO2003017341A2/en active IP Right Grant
- 2002-08-15 AU AU2002327474A patent/AU2002327474A1/en not_active Abandoned
- 2002-08-15 KR KR1020047002076A patent/KR100627503B1/ko not_active IP Right Cessation
- 2002-08-15 JP JP2003522151A patent/JP2005526377A/ja active Pending
- 2002-08-15 SG SG200601021-9A patent/SG146440A1/en unknown
- 2002-08-15 AT AT02763466T patent/ATE360260T1/de not_active IP Right Cessation
- 2002-08-15 CN CNB028160576A patent/CN100521086C/zh not_active Expired - Fee Related
- 2002-08-15 EP EP02763466A patent/EP1417701B1/de not_active Expired - Lifetime
- 2002-08-15 DE DE60219635T patent/DE60219635T2/de not_active Expired - Lifetime
- 2002-08-16 TW TW091118530A patent/TW559982B/zh not_active IP Right Cessation
-
2004
- 2004-02-12 US US10/778,795 patent/US6924195B2/en not_active Expired - Fee Related
- 2004-08-31 US US10/931,559 patent/US7354842B2/en not_active Expired - Fee Related
-
2005
- 2005-08-22 US US11/209,080 patent/US20060040414A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN100521086C (zh) | 2009-07-29 |
US20060040414A1 (en) | 2006-02-23 |
TW559982B (en) | 2003-11-01 |
US20040161892A1 (en) | 2004-08-19 |
US6924195B2 (en) | 2005-08-02 |
DE60219635T2 (de) | 2007-12-20 |
KR20040030959A (ko) | 2004-04-09 |
US7354842B2 (en) | 2008-04-08 |
AU2002327474A1 (en) | 2003-03-03 |
KR100627503B1 (ko) | 2006-09-21 |
KR100632614B1 (ko) | 2006-10-09 |
CN1543665A (zh) | 2004-11-03 |
DE60219635D1 (de) | 2007-05-31 |
SG146440A1 (en) | 2008-10-30 |
EP1417701B1 (de) | 2007-04-18 |
US20030036242A1 (en) | 2003-02-20 |
US20030036210A1 (en) | 2003-02-20 |
US20050032366A1 (en) | 2005-02-10 |
KR20060031708A (ko) | 2006-04-12 |
WO2003017341A2 (en) | 2003-02-27 |
EP1417701A2 (de) | 2004-05-12 |
JP2005526377A (ja) | 2005-09-02 |
WO2003017341A3 (en) | 2004-02-19 |
WO2003017341B1 (en) | 2004-04-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |