ATE355606T1 - Veränderbarer gasionenclusterstrahl zur glättung von oberflächen - Google Patents
Veränderbarer gasionenclusterstrahl zur glättung von oberflächenInfo
- Publication number
- ATE355606T1 ATE355606T1 AT00947375T AT00947375T ATE355606T1 AT E355606 T1 ATE355606 T1 AT E355606T1 AT 00947375 T AT00947375 T AT 00947375T AT 00947375 T AT00947375 T AT 00947375T AT E355606 T1 ATE355606 T1 AT E355606T1
- Authority
- AT
- Austria
- Prior art keywords
- workpiece
- gasion
- modifiable
- minimum
- cluster jet
- Prior art date
Links
- 238000009499 grossing Methods 0.000 title abstract 2
- 238000010884 ion-beam technique Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000003044 adaptive effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0812—Ionized cluster beam [ICB] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Physical Vapour Deposition (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14452499P | 1999-07-19 | 1999-07-19 | |
| US09/412,949 US6375790B1 (en) | 1999-07-19 | 1999-10-05 | Adaptive GCIB for smoothing surfaces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE355606T1 true ATE355606T1 (de) | 2006-03-15 |
Family
ID=26842080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00947375T ATE355606T1 (de) | 1999-07-19 | 2000-07-14 | Veränderbarer gasionenclusterstrahl zur glättung von oberflächen |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6375790B1 (de) |
| EP (1) | EP1200980B8 (de) |
| JP (1) | JP4799787B2 (de) |
| AT (1) | ATE355606T1 (de) |
| DE (1) | DE60033664T2 (de) |
| WO (1) | WO2001006538A1 (de) |
Families Citing this family (78)
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| US6251835B1 (en) * | 1997-05-08 | 2001-06-26 | Epion Corporation | Surface planarization of high temperature superconductors |
| JPH11120547A (ja) * | 1997-10-08 | 1999-04-30 | Hitachi Ltd | 磁気ディスク用基板、磁気ディスク媒体、磁気ディスク媒体製造装置、及び磁気ヘッド |
-
1999
- 1999-10-05 US US09/412,949 patent/US6375790B1/en not_active Expired - Lifetime
-
2000
- 2000-07-14 JP JP2001511710A patent/JP4799787B2/ja not_active Expired - Lifetime
- 2000-07-14 WO PCT/US2000/019249 patent/WO2001006538A1/en active IP Right Grant
- 2000-07-14 AT AT00947375T patent/ATE355606T1/de not_active IP Right Cessation
- 2000-07-14 EP EP00947375A patent/EP1200980B8/de not_active Expired - Lifetime
- 2000-07-14 DE DE60033664T patent/DE60033664T2/de not_active Expired - Fee Related
-
2001
- 2001-10-31 US US09/999,099 patent/US6805807B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1200980A1 (de) | 2002-05-02 |
| DE60033664D1 (de) | 2007-04-12 |
| US6805807B2 (en) | 2004-10-19 |
| DE60033664T2 (de) | 2008-02-07 |
| JP4799787B2 (ja) | 2011-10-26 |
| WO2001006538A1 (en) | 2001-01-25 |
| US6375790B1 (en) | 2002-04-23 |
| EP1200980B8 (de) | 2007-05-23 |
| US20020139772A1 (en) | 2002-10-03 |
| EP1200980B1 (de) | 2007-02-28 |
| JP2003505867A (ja) | 2003-02-12 |
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| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |