ATE262689T1 - Phasenschiebermaske-rohling, phasenschiebermaske und herstellungsverfahren - Google Patents
Phasenschiebermaske-rohling, phasenschiebermaske und herstellungsverfahrenInfo
- Publication number
- ATE262689T1 ATE262689T1 AT01300097T AT01300097T ATE262689T1 AT E262689 T1 ATE262689 T1 AT E262689T1 AT 01300097 T AT01300097 T AT 01300097T AT 01300097 T AT01300097 T AT 01300097T AT E262689 T1 ATE262689 T1 AT E262689T1
- Authority
- AT
- Austria
- Prior art keywords
- phase shifter
- shifter mask
- shift mask
- phase shift
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000010363 phase shift Effects 0.000 abstract 3
- 230000010354 integration Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000000332 | 2000-01-05 | ||
JP2000000336 | 2000-01-05 | ||
JP2000000333 | 2000-01-05 | ||
JP2000309453 | 2000-10-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE262689T1 true ATE262689T1 (de) | 2004-04-15 |
Family
ID=27480906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01300097T ATE262689T1 (de) | 2000-01-05 | 2001-01-05 | Phasenschiebermaske-rohling, phasenschiebermaske und herstellungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US6511778B2 (de) |
EP (1) | EP1116999B1 (de) |
KR (1) | KR20010070403A (de) |
AT (1) | ATE262689T1 (de) |
DE (1) | DE60102397T2 (de) |
TW (1) | TW497006B (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6511788B1 (en) * | 1999-02-12 | 2003-01-28 | Sony Corporation | Multi-layered optical disc |
JP2001235849A (ja) * | 2000-02-24 | 2001-08-31 | Shin Etsu Chem Co Ltd | 位相シフトマスク及びその製造方法 |
JP2001305713A (ja) | 2000-04-25 | 2001-11-02 | Shin Etsu Chem Co Ltd | フォトマスク用ブランクス及びフォトマスク |
TW541605B (en) * | 2000-07-07 | 2003-07-11 | Hitachi Ltd | Fabrication method of semiconductor integrated circuit device |
JP2004029081A (ja) * | 2002-06-21 | 2004-01-29 | Canon Inc | 位相シフトマスク、該位相シフトマスクを用いたパタン形成法、該パタン形成法による固体素子 |
KR100494442B1 (ko) * | 2002-10-22 | 2005-06-13 | 주식회사 에스앤에스텍 | 하프톤 위상 시프트 블랭크 마스크 및 포토 마스크의제조방법 |
JP4049372B2 (ja) * | 2002-10-23 | 2008-02-20 | Hoya株式会社 | ハーフトーン型位相シフトマスクブランクスの製造方法 |
US6875546B2 (en) * | 2003-03-03 | 2005-04-05 | Freescale Semiconductor, Inc. | Method of patterning photoresist on a wafer using an attenuated phase shift mask |
US7026076B2 (en) | 2003-03-03 | 2006-04-11 | Freescale Semiconductor, Inc. | Method of patterning photoresist on a wafer using a reflective mask with a multi-layer ARC |
KR101018567B1 (ko) * | 2004-06-22 | 2011-03-03 | 호야 가부시키가이샤 | 그레이 톤 마스크 블랭크, 그레이 톤 마스크 및 그 제조방법과 액정 표시 장치의 제조 방법 |
JP4867152B2 (ja) * | 2004-10-20 | 2012-02-01 | ソニー株式会社 | 固体撮像素子 |
US7906252B2 (en) * | 2006-03-06 | 2011-03-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multiple resist layer phase shift mask (PSM) blank and PSM formation method |
JP4509050B2 (ja) * | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
JP4883278B2 (ja) * | 2006-03-10 | 2012-02-22 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスクの製造方法 |
US8615663B2 (en) * | 2006-04-17 | 2013-12-24 | Broadcom Corporation | System and method for secure remote biometric authentication |
JP4737426B2 (ja) | 2006-04-21 | 2011-08-03 | 信越化学工業株式会社 | フォトマスクブランク |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3350095B2 (ja) * | 1992-03-24 | 2002-11-25 | 株式会社東芝 | マスクの修正方法 |
US5631109A (en) * | 1992-07-17 | 1997-05-20 | Kabushiki Kaisha Toshiba | Exposure mask comprising transparent and translucent phase shift patterns |
JP3262303B2 (ja) * | 1993-08-17 | 2002-03-04 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス |
JPH07295203A (ja) * | 1994-04-27 | 1995-11-10 | Dainippon Printing Co Ltd | ハーフトーン位相シフトフォトマスク用ブランクスの製造方法 |
KR100311704B1 (ko) | 1993-08-17 | 2001-12-15 | 기타오카 다카시 | 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및그블랭크스의제조방법 |
KR0147493B1 (ko) | 1995-10-25 | 1998-08-01 | 김주용 | 하프톤 위상반전마스크 제조방법 |
US5935735A (en) | 1996-10-24 | 1999-08-10 | Toppan Printing Co., Ltd. | Halftone phase shift mask, blank for the same, and methods of manufacturing these |
JPH10186632A (ja) | 1996-10-24 | 1998-07-14 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスク |
JP2904170B2 (ja) | 1996-12-27 | 1999-06-14 | 日本電気株式会社 | ハーフトーン位相シフトマスク及びハーフトーン位相シフトマスクの欠陥修正方法 |
JPH11184067A (ja) | 1997-12-19 | 1999-07-09 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク |
JPH11184063A (ja) | 1997-12-25 | 1999-07-09 | Ulvac Seimaku Kk | 位相シフトフォトマスクブランクス及び位相シフトフォトマスクの製造方法並びにサイドエッチング量の制御方法 |
-
2001
- 2001-01-04 KR KR1020010000305A patent/KR20010070403A/ko not_active Application Discontinuation
- 2001-01-04 US US09/753,517 patent/US6511778B2/en not_active Expired - Lifetime
- 2001-01-05 EP EP01300097A patent/EP1116999B1/de not_active Expired - Lifetime
- 2001-01-05 TW TW090100303A patent/TW497006B/zh not_active IP Right Cessation
- 2001-01-05 DE DE60102397T patent/DE60102397T2/de not_active Expired - Lifetime
- 2001-01-05 AT AT01300097T patent/ATE262689T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1116999A1 (de) | 2001-07-18 |
DE60102397D1 (de) | 2004-04-29 |
EP1116999B1 (de) | 2004-03-24 |
US6511778B2 (en) | 2003-01-28 |
KR20010070403A (ko) | 2001-07-25 |
DE60102397T2 (de) | 2005-02-24 |
TW497006B (en) | 2002-08-01 |
US20010006754A1 (en) | 2001-07-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |