ATE235743T1 - Atomare drähte von grosser länge und stabilität und verfahren zum herstellen dieser drähte - Google Patents
Atomare drähte von grosser länge und stabilität und verfahren zum herstellen dieser drähteInfo
- Publication number
- ATE235743T1 ATE235743T1 AT97951334T AT97951334T ATE235743T1 AT E235743 T1 ATE235743 T1 AT E235743T1 AT 97951334 T AT97951334 T AT 97951334T AT 97951334 T AT97951334 T AT 97951334T AT E235743 T1 ATE235743 T1 AT E235743T1
- Authority
- AT
- Austria
- Prior art keywords
- wires
- stability
- atomic
- producing
- great length
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000000539 dimer Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/712—Integrated with dissimilar structures on a common substrate formed from plural layers of nanosized material, e.g. stacked structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Fibers (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Chemical Vapour Deposition (AREA)
- Wire Bonding (AREA)
- Yarns And Mechanical Finishing Of Yarns Or Ropes (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9615435A FR2757183B1 (fr) | 1996-12-16 | 1996-12-16 | Fils atomiques de grande longueur et de grande stabilite, procede de fabrication de ces fils, application en nano-electronique |
PCT/FR1997/002298 WO1998027578A1 (fr) | 1996-12-16 | 1997-12-15 | Fils atomiques de grande longueur et de gande stabilite, procede de fabrication de ces fils, application en nano-electronique |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE235743T1 true ATE235743T1 (de) | 2003-04-15 |
Family
ID=9498707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT97951334T ATE235743T1 (de) | 1996-12-16 | 1997-12-15 | Atomare drähte von grosser länge und stabilität und verfahren zum herstellen dieser drähte |
Country Status (8)
Country | Link |
---|---|
US (1) | US6274234B1 (de) |
EP (1) | EP0944916B1 (de) |
JP (1) | JP4327254B2 (de) |
AT (1) | ATE235743T1 (de) |
DE (1) | DE69720249T2 (de) |
DK (1) | DK0944916T3 (de) |
FR (1) | FR2757183B1 (de) |
WO (1) | WO1998027578A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2786794B1 (fr) * | 1998-12-02 | 2001-03-02 | Commissariat Energie Atomique | Couche monoatomique et monocristalline de grande taille, en carbone de type diamant, et procede de fabrication de cette couche |
FR2801723B1 (fr) | 1999-11-25 | 2003-09-05 | Commissariat Energie Atomique | Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche |
AU2001269687A1 (en) * | 2000-05-09 | 2001-11-20 | Usf Filtration And Separations Group Inc. | Apparatus and method for drawing continuous fiber |
FR2823770B1 (fr) * | 2001-04-19 | 2004-05-21 | Commissariat Energie Atomique | Procede de traitement de la surface d'un materiau semiconducteur, utilisant notamment l'hydrogene, et surface obtenue par ce procede |
FR2823739B1 (fr) * | 2001-04-19 | 2003-05-16 | Commissariat Energie Atomique | Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede |
US6762131B2 (en) * | 2002-04-13 | 2004-07-13 | The Board Of Trustees Of The University Of Illinois | Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies |
FR2841892B1 (fr) * | 2002-07-05 | 2005-05-06 | Commissariat Energie Atomique | Nano-objets metalliques, formes sur des surfaces de carbure de silicium, et procede de fabrication de ces nano-objets |
US6869480B1 (en) * | 2002-07-17 | 2005-03-22 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Method for the production of nanometer scale step height reference specimens |
US7618880B1 (en) * | 2004-02-19 | 2009-11-17 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
US8617965B1 (en) | 2004-02-19 | 2013-12-31 | Partial Assignment to University of Central Florida | Apparatus and method of forming high crystalline quality layer |
US7268063B1 (en) * | 2004-06-01 | 2007-09-11 | University Of Central Florida | Process for fabricating semiconductor component |
FR2871936B1 (fr) * | 2004-06-21 | 2006-10-06 | Commissariat Energie Atomique | Procede de metallisation de la surface prealablement passivee d'un materiau semi conducteur et materiau obtenu par ce procede |
US7419887B1 (en) | 2004-07-26 | 2008-09-02 | Quick Nathaniel R | Laser assisted nano deposition |
US7951632B1 (en) | 2005-01-26 | 2011-05-31 | University Of Central Florida | Optical device and method of making |
FR2887866B1 (fr) * | 2005-06-30 | 2007-08-17 | Commissariat Energie Atomique | Nanostructures a resistance differentielle negative et procede de fabrication de ces nanostructures |
WO2007003576A1 (fr) * | 2005-06-30 | 2007-01-11 | Commissariat A L'energie Atomique | Nanostructures a resistance differentielle negative et leur procede de fabrication |
FR2888399B1 (fr) * | 2005-07-05 | 2008-03-14 | Commissariat Energie Atomique | Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle couche |
FR2888398B1 (fr) * | 2005-07-05 | 2007-12-21 | Commissariat Energie Atomique | Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche |
US8617669B1 (en) | 2006-04-20 | 2013-12-31 | Partial Assignment to University of Central Florida | Laser formation of graphene |
US7811914B1 (en) * | 2006-04-20 | 2010-10-12 | Quick Nathaniel R | Apparatus and method for increasing thermal conductivity of a substrate |
US8067303B1 (en) | 2006-09-12 | 2011-11-29 | Partial Assignment University of Central Florida | Solid state energy conversion device |
US8114693B1 (en) | 2007-09-18 | 2012-02-14 | Partial Assignment University of Central Florida | Method of fabricating solid state gas dissociating device by laser doping |
US20110117372A1 (en) * | 2008-03-10 | 2011-05-19 | Tohoku University | Graphene or graphite thin film, manufacturing method thereof, thin film structure and electronic device |
US8828769B2 (en) * | 2008-12-02 | 2014-09-09 | University Of Central Florida | Energy conversion device |
US9059079B1 (en) | 2012-09-26 | 2015-06-16 | Ut-Battelle, Llc | Processing of insulators and semiconductors |
US9620667B1 (en) | 2013-12-10 | 2017-04-11 | AppliCote Associates LLC | Thermal doping of materials |
US9601641B1 (en) | 2013-12-10 | 2017-03-21 | AppliCote Associates, LLC | Ultra-high pressure doping of materials |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5145741A (en) * | 1989-06-05 | 1992-09-08 | Quick Nathaniel R | Converting ceramic materials to electrical conductors and semiconductors |
WO1992022922A2 (en) * | 1991-06-12 | 1992-12-23 | Case Western Reserve University | Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers |
GB9206086D0 (en) * | 1992-03-20 | 1992-05-06 | Philips Electronics Uk Ltd | Manufacturing electronic devices comprising,e.g.tfts and mims |
US5296258A (en) * | 1992-09-30 | 1994-03-22 | Northern Telecom Limited | Method of forming silicon carbide |
US5391841A (en) * | 1992-12-08 | 1995-02-21 | Quick; Nathaniel R. | Laser processed coatings on electronic circuit substrates |
US5318915A (en) * | 1993-01-25 | 1994-06-07 | North Carolina State University At Raleigh | Method for forming a p-n junction in silicon carbide |
US5709745A (en) * | 1993-01-25 | 1998-01-20 | Ohio Aerospace Institute | Compound semi-conductors and controlled doping thereof |
US5442200A (en) * | 1994-06-03 | 1995-08-15 | Advanced Technology Materials, Inc. | Low resistance, stable ohmic contacts to silcon carbide, and method of making the same |
-
1996
- 1996-12-16 FR FR9615435A patent/FR2757183B1/fr not_active Expired - Fee Related
-
1997
- 1997-12-15 EP EP97951334A patent/EP0944916B1/de not_active Expired - Lifetime
- 1997-12-15 DE DE69720249T patent/DE69720249T2/de not_active Expired - Lifetime
- 1997-12-15 US US09/319,977 patent/US6274234B1/en not_active Expired - Lifetime
- 1997-12-15 JP JP52738698A patent/JP4327254B2/ja not_active Expired - Fee Related
- 1997-12-15 WO PCT/FR1997/002298 patent/WO1998027578A1/fr active IP Right Grant
- 1997-12-15 AT AT97951334T patent/ATE235743T1/de not_active IP Right Cessation
- 1997-12-15 DK DK97951334T patent/DK0944916T3/da active
Also Published As
Publication number | Publication date |
---|---|
US6274234B1 (en) | 2001-08-14 |
WO1998027578A1 (fr) | 1998-06-25 |
EP0944916A1 (de) | 1999-09-29 |
FR2757183B1 (fr) | 1999-02-05 |
DK0944916T3 (da) | 2003-07-21 |
DE69720249D1 (de) | 2003-04-30 |
DE69720249T2 (de) | 2003-12-11 |
EP0944916B1 (de) | 2003-03-26 |
FR2757183A1 (fr) | 1998-06-19 |
JP2001506806A (ja) | 2001-05-22 |
JP4327254B2 (ja) | 2009-09-09 |
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Legal Events
Date | Code | Title | Description |
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UEP | Publication of translation of european patent specification |
Ref document number: 0944916 Country of ref document: EP |
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REN | Ceased due to non-payment of the annual fee |