ATE197746T1 - Verfahren zur verdrahtung eines halbleiterbauelementes - Google Patents
Verfahren zur verdrahtung eines halbleiterbauelementesInfo
- Publication number
- ATE197746T1 ATE197746T1 AT91304658T AT91304658T ATE197746T1 AT E197746 T1 ATE197746 T1 AT E197746T1 AT 91304658 T AT91304658 T AT 91304658T AT 91304658 T AT91304658 T AT 91304658T AT E197746 T1 ATE197746 T1 AT E197746T1
- Authority
- AT
- Austria
- Prior art keywords
- wiring
- semiconductor component
- insulating film
- metallic substance
- conductive metallic
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000007769 metal material Substances 0.000 abstract 2
- 238000005137 deposition process Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14373390A JPH0437029A (ja) | 1990-05-31 | 1990-05-31 | 半導体装置の配線形成方法 |
| JP14370190A JPH0437133A (ja) | 1990-06-01 | 1990-06-01 | 半導体装置の配線形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE197746T1 true ATE197746T1 (de) | 2000-12-15 |
Family
ID=26475367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT91304658T ATE197746T1 (de) | 1990-05-31 | 1991-05-22 | Verfahren zur verdrahtung eines halbleiterbauelementes |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0459700B1 (de) |
| AT (1) | ATE197746T1 (de) |
| DE (1) | DE69132474T2 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4222757B2 (ja) | 2000-05-04 | 2009-02-12 | クナノ・アーベー | ナノ構造 |
| DE102004028031A1 (de) * | 2004-06-09 | 2006-01-05 | Infineon Technologies Ag | Selektives Beschichtungsverfahren und Dünnschichtsystem |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0130398B1 (de) * | 1983-06-29 | 1991-01-23 | Siemens Aktiengesellschaft | Verfahren zur Herstellung einer elektrisch leitfähigen Verbindung und Vorrichtung zur Durchführung eines solchen Verfahrens |
| JPS61214539A (ja) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | 配線形成方法 |
| JPH0763064B2 (ja) * | 1986-03-31 | 1995-07-05 | 株式会社日立製作所 | Ｉｃ素子における配線接続方法 |
| JPS62281349A (ja) * | 1986-05-29 | 1987-12-07 | Seiko Instr & Electronics Ltd | 金属パタ−ン膜の形成方法及びその装置 |
| JPH01217946A (ja) * | 1988-02-26 | 1989-08-31 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
-
1991
- 1991-05-22 EP EP91304658A patent/EP0459700B1/de not_active Expired - Lifetime
- 1991-05-22 AT AT91304658T patent/ATE197746T1/de not_active IP Right Cessation
- 1991-05-22 DE DE69132474T patent/DE69132474T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69132474D1 (de) | 2000-12-28 |
| DE69132474T2 (de) | 2001-05-03 |
| EP0459700B1 (de) | 2000-11-22 |
| EP0459700A2 (de) | 1991-12-04 |
| EP0459700A3 (en) | 1992-10-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |