GB2003660A - Deposition of material on a substrate - Google Patents
Deposition of material on a substrateInfo
- Publication number
- GB2003660A GB2003660A GB7833641A GB7833641A GB2003660A GB 2003660 A GB2003660 A GB 2003660A GB 7833641 A GB7833641 A GB 7833641A GB 7833641 A GB7833641 A GB 7833641A GB 2003660 A GB2003660 A GB 2003660A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- area
- deposition
- depositing
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 title abstract 3
- 230000008021 deposition Effects 0.000 title 1
- 238000000151 deposition Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A method of depositing an area 6, particularly of metal, on a substrate 1 includes the steps of defining a resist step 3 on the substrate, depositing a thickness of the material 5 to provide a uniform coverage of the step, unidirectionally etching the material to define the area 6 as an abutment to the step 3 and removing the resist 2 to leave the required area of material. <IMAGE>
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7833641A GB2003660A (en) | 1977-08-19 | 1978-08-17 | Deposition of material on a substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3486577 | 1977-08-19 | ||
GB7833641A GB2003660A (en) | 1977-08-19 | 1978-08-17 | Deposition of material on a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
GB2003660A true GB2003660A (en) | 1979-03-14 |
Family
ID=26262477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7833641A Withdrawn GB2003660A (en) | 1977-08-19 | 1978-08-17 | Deposition of material on a substrate |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2003660A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0010623A1 (en) * | 1978-11-03 | 1980-05-14 | International Business Machines Corporation | Method for forming a laminated structure for highly integrated semiconductor devices with an insulating layer between two conductive layers |
EP0081977A2 (en) * | 1981-12-11 | 1983-06-22 | Western Electric Company, Incorporated | A maskless process for applying a patterned coating |
US4400865A (en) | 1980-07-08 | 1983-08-30 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
US4459320A (en) * | 1981-12-11 | 1984-07-10 | At&T Bell Laboratories | Maskless process for applying a patterned solder mask coating |
US4471522A (en) * | 1980-07-08 | 1984-09-18 | International Business Machines Corporation | Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes |
EP0240683A1 (en) * | 1986-04-07 | 1987-10-14 | International Business Machines Corporation | Fabrication of insulated gallium arsenide-gate FET with self-aligned source/drain and submicron channel length |
US4758528A (en) * | 1980-07-08 | 1988-07-19 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
EP0313814A2 (en) * | 1987-10-30 | 1989-05-03 | International Business Machines Corporation | Organic sidewall structures |
EP0313815A2 (en) * | 1987-10-30 | 1989-05-03 | International Business Machines Corporation | Formation of variable-width sidewall structures |
-
1978
- 1978-08-17 GB GB7833641A patent/GB2003660A/en not_active Withdrawn
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0010623A1 (en) * | 1978-11-03 | 1980-05-14 | International Business Machines Corporation | Method for forming a laminated structure for highly integrated semiconductor devices with an insulating layer between two conductive layers |
US4471522A (en) * | 1980-07-08 | 1984-09-18 | International Business Machines Corporation | Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes |
US4400865A (en) | 1980-07-08 | 1983-08-30 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
US4758528A (en) * | 1980-07-08 | 1988-07-19 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
WO1983002074A1 (en) * | 1981-12-11 | 1983-06-23 | Western Electric Co | A maskless process for applying a patterned coating |
EP0081977A3 (en) * | 1981-12-11 | 1984-06-27 | Western Electric Company, Incorporated | A maskless process for applying a patterned coating |
US4459320A (en) * | 1981-12-11 | 1984-07-10 | At&T Bell Laboratories | Maskless process for applying a patterned solder mask coating |
EP0081977A2 (en) * | 1981-12-11 | 1983-06-22 | Western Electric Company, Incorporated | A maskless process for applying a patterned coating |
EP0240683A1 (en) * | 1986-04-07 | 1987-10-14 | International Business Machines Corporation | Fabrication of insulated gallium arsenide-gate FET with self-aligned source/drain and submicron channel length |
EP0313814A2 (en) * | 1987-10-30 | 1989-05-03 | International Business Machines Corporation | Organic sidewall structures |
EP0313815A2 (en) * | 1987-10-30 | 1989-05-03 | International Business Machines Corporation | Formation of variable-width sidewall structures |
EP0313815A3 (en) * | 1987-10-30 | 1990-11-22 | International Business Machines Corporation | Formation of variable-width sidewall structures |
EP0313814A3 (en) * | 1987-10-30 | 1991-01-02 | International Business Machines Corporation | Organic sidewall structures |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |