ATE161589T1 - Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren - Google Patents

Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren

Info

Publication number
ATE161589T1
ATE161589T1 AT95101918T AT95101918T ATE161589T1 AT E161589 T1 ATE161589 T1 AT E161589T1 AT 95101918 T AT95101918 T AT 95101918T AT 95101918 T AT95101918 T AT 95101918T AT E161589 T1 ATE161589 T1 AT E161589T1
Authority
AT
Austria
Prior art keywords
alkoxy
carrier gas
precursor
deposing
water vapor
Prior art date
Application number
AT95101918T
Other languages
English (en)
Inventor
Terence Clark
Richard Cruse
Stephen Rohman
Robert Mininni
Original Assignee
Enichem Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enichem Spa filed Critical Enichem Spa
Application granted granted Critical
Publication of ATE161589T1 publication Critical patent/ATE161589T1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
AT95101918T 1994-03-07 1995-02-13 Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren ATE161589T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/206,857 US5424095A (en) 1994-03-07 1994-03-07 Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors

Publications (1)

Publication Number Publication Date
ATE161589T1 true ATE161589T1 (de) 1998-01-15

Family

ID=22768265

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95101918T ATE161589T1 (de) 1994-03-07 1995-02-13 Verfahren zur abscheidung einer keramischen beschichtung aus der dampfphase unter verwendung eines wasserdampfhaltigen trägergases und nicht- alkoxy-silan precursoren

Country Status (5)

Country Link
US (1) US5424095A (de)
EP (1) EP0671483B1 (de)
AT (1) ATE161589T1 (de)
DE (1) DE69501274T2 (de)
ES (1) ES2111972T3 (de)

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UA50853C2 (uk) 1997-10-08 2002-11-15 Шелл Інтернаціонале Рісерч Маатшаппідж Б.В. Робочий нагрівач безполуменевої камери згоряння та спосіб забезпечення теплоти для ендотермічного процесу за допомогою такого нагрівача
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US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
US7750173B2 (en) * 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
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ATE511062T1 (de) * 2007-07-20 2011-06-15 Shell Int Research Heizvorrichtung zur flammenlosen verbrennung
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CA2724389A1 (en) * 2010-12-08 2012-06-08 Nova Chemicals Corporation In situ removal of iron complexes during cracking
KR101659463B1 (ko) 2011-06-03 2016-09-23 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 탄소-도핑된 규소-함유 막을 증착시키기 위한 조성물 및 방법
WO2013177326A1 (en) 2012-05-25 2013-11-28 Advanced Technology Materials, Inc. Silicon precursors for low temperature ald of silicon-based thin-films
US20150275355A1 (en) * 2014-03-26 2015-10-01 Air Products And Chemicals, Inc. Compositions and methods for the deposition of silicon oxide films
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US10703915B2 (en) 2016-09-19 2020-07-07 Versum Materials Us, Llc Compositions and methods for the deposition of silicon oxide films
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US11177127B2 (en) * 2017-05-24 2021-11-16 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
US11049714B2 (en) * 2017-09-19 2021-06-29 Versum Materials Us, Llc Silyl substituted organoamines as precursors for high growth rate silicon-containing films
WO2023147382A1 (en) * 2022-01-26 2023-08-03 Versum Materials Us, Llc Halide-functionalized cyclotrisilazanes as precursors for deposition of silicon-containing films

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DE4212501C1 (en) * 1992-04-14 1993-08-05 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Deposition of silicon nitride polymer layer on substrate - using linear or cyclic silazane in gas, giving good quality and high coating ratio

Also Published As

Publication number Publication date
EP0671483B1 (de) 1997-12-29
EP0671483A1 (de) 1995-09-13
ES2111972T3 (es) 1998-03-16
US5424095A (en) 1995-06-13
DE69501274T2 (de) 1998-04-16
DE69501274D1 (de) 1998-02-05

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