ATE139866T1 - Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydrid - Google Patents
Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydridInfo
- Publication number
- ATE139866T1 ATE139866T1 AT91301278T AT91301278T ATE139866T1 AT E139866 T1 ATE139866 T1 AT E139866T1 AT 91301278 T AT91301278 T AT 91301278T AT 91301278 T AT91301278 T AT 91301278T AT E139866 T1 ATE139866 T1 AT E139866T1
- Authority
- AT
- Austria
- Prior art keywords
- main component
- metal layer
- layer containing
- deposited metal
- aluminum hydride
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title abstract 3
- 239000002184 metal Substances 0.000 title abstract 3
- 229910052782 aluminium Inorganic materials 0.000 title abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title abstract 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- -1 alkylaluminum hydride Chemical class 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3619590 | 1990-02-19 | ||
JP3619490 | 1990-02-19 | ||
JP3619690 | 1990-02-19 | ||
JP3619790 | 1990-02-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE139866T1 true ATE139866T1 (de) | 1996-07-15 |
Family
ID=27460225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT91301278T ATE139866T1 (de) | 1990-02-19 | 1991-02-18 | Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydrid |
Country Status (7)
Country | Link |
---|---|
US (3) | US5151305A (de) |
EP (1) | EP0448223B1 (de) |
KR (1) | KR940006669B1 (de) |
CN (1) | CN1036860C (de) |
AT (1) | ATE139866T1 (de) |
DE (1) | DE69120446T2 (de) |
MY (1) | MY104628A (de) |
Families Citing this family (52)
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KR910003742B1 (ko) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
EP0448223B1 (de) * | 1990-02-19 | 1996-06-26 | Canon Kabushiki Kaisha | Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid |
MY107475A (en) * | 1990-05-31 | 1995-12-30 | Canon Kk | Semiconductor device and method for producing the same. |
SG46606A1 (en) * | 1990-05-31 | 1998-02-20 | Conon Kabushiki Kaisha | Device seperation structure and semiconductor device improved in wiring structure |
EP0498580A1 (de) * | 1991-02-04 | 1992-08-12 | Canon Kabushiki Kaisha | Verfahren zur Herstellung einer abgeschiedenen Metallschicht, die Aluminium enthält, mit Anwendung von Alkylaluminiumhalid |
US5627345A (en) * | 1991-10-24 | 1997-05-06 | Kawasaki Steel Corporation | Multilevel interconnect structure |
DE69218152T2 (de) * | 1991-12-26 | 1997-08-28 | Canon K.K., Tokio/Tokyo | Herstellungsverfahren einer niedergeschlagenen Schicht mittels CVD, unter Verwendung von flüssigem Rohstoff und dazu geeignete Vorrichtung |
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US5534069A (en) * | 1992-07-23 | 1996-07-09 | Canon Kabushiki Kaisha | Method of treating active material |
JP3334911B2 (ja) * | 1992-07-31 | 2002-10-15 | キヤノン株式会社 | パターン形成方法 |
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EP0608628A3 (de) * | 1992-12-25 | 1995-01-18 | Kawasaki Steel Co | Verfahren zur Herstellung einer Halbleitervorrichtung mit Mehrlagen-Verbindungsstruktur. |
US5545591A (en) * | 1993-01-29 | 1996-08-13 | Nec Corporation | Method for forming an aluminum film used as an interconnect in a semiconductor device |
US5747119A (en) * | 1993-02-05 | 1998-05-05 | Kabushiki Kaisha Toshiba | Vapor deposition method and apparatus |
GB9315771D0 (en) * | 1993-07-30 | 1993-09-15 | Epichem Ltd | Method of depositing thin metal films |
KR100291971B1 (ko) * | 1993-10-26 | 2001-10-24 | 야마자끼 순페이 | 기판처리장치및방법과박막반도체디바이스제조방법 |
DE4417966A1 (de) * | 1994-05-21 | 1995-11-23 | Fraunhofer Ges Forschung | Verfahren zur modularen Kontaktierung mehrlagiger Halbleiterbauelemente |
KR0144956B1 (ko) * | 1994-06-10 | 1998-08-17 | 김광호 | 반도체 장치의 배선 구조 및 그 형성방법 |
JPH0874028A (ja) * | 1994-09-01 | 1996-03-19 | Matsushita Electric Ind Co Ltd | 薄膜形成装置および薄膜形成方法 |
DE19516181A1 (de) * | 1995-05-03 | 1996-11-07 | Basf Ag | Goniochromatische Glanzpigmente mit Aluminiumbeschichtung |
KR0172851B1 (ko) * | 1995-12-19 | 1999-03-30 | 문정환 | 반도체 장치의 배선방법 |
US5667592A (en) * | 1996-04-16 | 1997-09-16 | Gasonics International | Process chamber sleeve with ring seals for isolating individual process modules in a common cluster |
US5989633A (en) * | 1996-04-29 | 1999-11-23 | Applied Materials, Inc. | Process for overcoming CVD aluminum selectivity loss with warm PVD aluminum |
US5874131A (en) * | 1996-10-02 | 1999-02-23 | Micron Technology, Inc. | CVD method for forming metal-containing films |
US6110828A (en) * | 1996-12-30 | 2000-08-29 | Applied Materials, Inc. | In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization |
US6221766B1 (en) * | 1997-01-24 | 2001-04-24 | Steag Rtp Systems, Inc. | Method and apparatus for processing refractory metals on semiconductor substrates |
KR100434307B1 (ko) * | 1997-06-27 | 2004-07-16 | 주식회사 하이닉스반도체 | 반도체소자의알루미늄박막형성방법 |
JP3085247B2 (ja) * | 1997-07-07 | 2000-09-04 | 日本電気株式会社 | 金属薄膜の形成方法 |
US6235631B1 (en) * | 1997-10-30 | 2001-05-22 | Texas Instruments Incorporated | Method for forming titanium aluminum nitride layers |
KR100279067B1 (ko) | 1998-04-23 | 2001-01-15 | 신현국 | 화학증착용알루미늄화합물및그제조방법 |
DE19834314A1 (de) * | 1998-07-30 | 2000-02-03 | Leybold Systems Gmbh | Verfahren zum Aufbringen einer Kratzschutzschicht und eines Entspiegelungsschichtsystems und Vorrichtung zu seiner Durchführung |
KR100332364B1 (ko) * | 1998-09-01 | 2002-09-18 | 지니텍 주식회사 | 금속막의형성방법 |
KR100289945B1 (ko) * | 1998-09-15 | 2001-09-17 | 신현국 | 알루미늄박막의화학증착용전구체화합물및이의제조방법 |
US6561796B1 (en) * | 1999-09-07 | 2003-05-13 | Novellus Systems, Inc. | Method of semiconductor wafer heating to prevent bowing |
US6500250B1 (en) | 2000-05-26 | 2002-12-31 | Rohn And Haas Company | Compounds for forming alumina films using chemical vapor deposition method and process for preparing the compound |
US6977014B1 (en) | 2000-06-02 | 2005-12-20 | Novellus Systems, Inc. | Architecture for high throughput semiconductor processing applications |
US6860965B1 (en) * | 2000-06-23 | 2005-03-01 | Novellus Systems, Inc. | High throughput architecture for semiconductor processing |
US6770562B2 (en) | 2000-10-26 | 2004-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and film formation method |
KR100546700B1 (ko) * | 2000-12-30 | 2006-01-26 | 주식회사 하이닉스반도체 | 수소 원자를 이용한 불순물 제거 방법 |
US20030159653A1 (en) * | 2002-02-28 | 2003-08-28 | Dando Ross S. | Manifold assembly for feeding reactive precursors to substrate processing chambers |
US6896730B2 (en) * | 2002-06-05 | 2005-05-24 | Micron Technology, Inc. | Atomic layer deposition apparatus and methods |
US7057794B2 (en) * | 2004-05-19 | 2006-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Micromirror for MEMS device |
US20060037933A1 (en) * | 2004-08-23 | 2006-02-23 | Wei-Ya Wang | Mirror process using tungsten passivation layer for preventing metal-spiking induced mirror bridging and improving mirror curvature |
KR100724084B1 (ko) * | 2005-11-16 | 2007-06-04 | 주식회사 유피케미칼 | 디알킬아미도디하이드로알루미늄 화합물을 이용한 박막증착방법 |
US7942970B2 (en) * | 2005-12-20 | 2011-05-17 | Momentive Performance Materials Inc. | Apparatus for making crystalline composition |
CN104121345B (zh) | 2007-02-12 | 2017-01-11 | 福博科知识产权有限责任公司 | 无级变速器及其方法 |
US9664974B2 (en) | 2009-03-31 | 2017-05-30 | View, Inc. | Fabrication of low defectivity electrochromic devices |
RU2017140197A (ru) | 2011-12-12 | 2019-02-12 | Вью, Инк. | Тонкопленочные устройства и их изготовление |
CN103021823B (zh) * | 2012-12-15 | 2016-03-16 | 山东孚日光伏科技有限公司 | 一种非真空的步进通过式快速硒化装置及利用其实现的硒化方法 |
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US4923717A (en) * | 1989-03-17 | 1990-05-08 | Regents Of The University Of Minnesota | Process for the chemical vapor deposition of aluminum |
US5196372A (en) | 1989-09-09 | 1993-03-23 | Canon Kabushiki Kaisha | Process for forming metal deposited film containing aluminum as main component by use of alkyl hydride |
PT95232B (pt) | 1989-09-09 | 1998-06-30 | Canon Kk | Processo de producao de uma pelicula de aluminio depositada |
EP0420594B1 (de) | 1989-09-26 | 1996-04-17 | Canon Kabushiki Kaisha | Verfahren zur Herstellung von einer abgeschiedenen Metallschicht, die Aluminium als Hauptkomponent enthält, mit Anwendung von Alkalimetallaluminiumhydride |
EP0420590B1 (de) | 1989-09-26 | 1996-03-27 | Canon Kabushiki Kaisha | Verfahren zum Herstellen einer abgeschiedenen Schicht, und Verfahren zum Herstellen einer Halbleitervorrichtung |
EP0448223B1 (de) * | 1990-02-19 | 1996-06-26 | Canon Kabushiki Kaisha | Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid |
US5130459A (en) * | 1990-06-08 | 1992-07-14 | Nec Corporation | Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same |
-
1991
- 1991-02-18 EP EP91301278A patent/EP0448223B1/de not_active Expired - Lifetime
- 1991-02-18 DE DE69120446T patent/DE69120446T2/de not_active Expired - Fee Related
- 1991-02-18 AT AT91301278T patent/ATE139866T1/de not_active IP Right Cessation
- 1991-02-19 CN CN91101919A patent/CN1036860C/zh not_active Expired - Fee Related
- 1991-02-19 US US07/656,960 patent/US5151305A/en not_active Expired - Lifetime
- 1991-02-19 KR KR1019910002647A patent/KR940006669B1/ko not_active IP Right Cessation
- 1991-02-19 MY MYPI91000265A patent/MY104628A/en unknown
-
1992
- 1992-07-17 US US07/913,918 patent/US5330633A/en not_active Expired - Lifetime
-
1995
- 1995-01-26 US US08/378,932 patent/US6258174B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
MY104628A (en) | 1994-04-30 |
US5151305A (en) | 1992-09-29 |
DE69120446D1 (de) | 1996-08-01 |
US6258174B1 (en) | 2001-07-10 |
DE69120446T2 (de) | 1996-11-14 |
CN1036860C (zh) | 1997-12-31 |
KR920000113A (ko) | 1992-01-10 |
US5330633A (en) | 1994-07-19 |
EP0448223A3 (en) | 1992-02-19 |
CN1061445A (zh) | 1992-05-27 |
EP0448223B1 (de) | 1996-06-26 |
JPH04214868A (ja) | 1992-08-05 |
EP0448223A2 (de) | 1991-09-25 |
KR940006669B1 (ko) | 1994-07-25 |
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