AT516064A5 - Verfahren zum Aufbringen einer Temporärbondschicht - Google Patents
Verfahren zum Aufbringen einer Temporärbondschicht Download PDFInfo
- Publication number
- AT516064A5 AT516064A5 ATA9019/2013A AT90192013A AT516064A5 AT 516064 A5 AT516064 A5 AT 516064A5 AT 90192013 A AT90192013 A AT 90192013A AT 516064 A5 AT516064 A5 AT 516064A5
- Authority
- AT
- Austria
- Prior art keywords
- applying
- boundary layer
- temporary
- bonding
- temporärbondschicht
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 230000004927 fusion Effects 0.000 abstract 2
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Peptides Or Proteins (AREA)
- Weting (AREA)
Abstract
Die Erfindung betrifft ein Verfahren zum Aufbringen einer Temporärbondschicht (2, 2', 2") auf einen Trägerwafer (1) zum temporären Verbinden mit einem Produktwafer (4) durch Fusionsbonden oder anodisches Bonden mit folgenden Schritten, insbesondere folgendem Ablauf: - Aufbringen der zum Fusionsbonden oder anodischen Bonden geeigneten Temporärbondschicht (2, 2', 2") auf den Trägerwafer (1) und - Modifikation der Temporärbondschicht (2, 2', 2") während und/oder nach dem Aufbringen derart, dass die temporäre Verbindung der Temporärbondschicht (2, 2', 2") lösbar ist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012112989.4A DE102012112989A1 (de) | 2012-12-21 | 2012-12-21 | Verfahren zum Aufbringen einer Temporärbondschicht |
PCT/EP2013/076629 WO2014095668A1 (de) | 2012-12-21 | 2013-12-16 | Verfahren zum aufbringen einer temporärbondschicht |
Publications (2)
Publication Number | Publication Date |
---|---|
AT516064B1 AT516064B1 (de) | 2016-02-15 |
AT516064A5 true AT516064A5 (de) | 2016-02-15 |
Family
ID=49883069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ATA9019/2013A AT516064B1 (de) | 2012-12-21 | 2013-12-16 | Verfahren zum Aufbringen einer Temporärbondschicht |
Country Status (8)
Country | Link |
---|---|
US (1) | US20150047784A1 (de) |
JP (1) | JP2016503961A (de) |
KR (1) | KR20150097381A (de) |
CN (1) | CN104380457A (de) |
AT (1) | AT516064B1 (de) |
DE (1) | DE102012112989A1 (de) |
SG (1) | SG2014013056A (de) |
WO (1) | WO2014095668A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102507283B1 (ko) | 2015-12-22 | 2023-03-07 | 삼성전자주식회사 | 기판 척 및 이를 포함하는 기판 접합 시스템 |
JP2017163009A (ja) * | 2016-03-10 | 2017-09-14 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
US10676350B2 (en) | 2018-09-21 | 2020-06-09 | ColdQuanta, Inc. | Reversible anodic bonding |
DE102023000322A1 (de) | 2022-10-05 | 2024-04-11 | Luce Patent Gmbh | Verfahren zur stofflichen und energetischen Verwertung der festen Rückstände der Methanfermentation von Pflanzenteilen |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5661333A (en) * | 1994-01-26 | 1997-08-26 | Commissariat A L'energie Atomique | Substrate for integrated components comprising a thin film and an intermediate film |
DE19654791A1 (de) * | 1996-03-18 | 1997-09-25 | Mitsubishi Electric Corp | Verfahren zur Herstellung einer Halbleitervorrichtung |
US5856229A (en) * | 1994-03-10 | 1999-01-05 | Canon Kabushiki Kaisha | Process for production of semiconductor substrate |
DE19958803C1 (de) * | 1999-12-07 | 2001-08-30 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung |
US20080309867A1 (en) * | 2005-11-22 | 2008-12-18 | Vida Kampstra | Process for fabricating a flexible electronic device of the screen type, including a plurality of thin-film components |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4439602B2 (ja) * | 1997-09-29 | 2010-03-24 | 株式会社東芝 | 半導体装置の製造方法 |
US6853129B1 (en) * | 2000-07-28 | 2005-02-08 | Candescent Technologies Corporation | Protected substrate structure for a field emission display device |
DE10060433B4 (de) * | 2000-12-05 | 2006-05-11 | Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. | Verfahren zur Herstellung eines Fluidbauelements, Fluidbauelement und Analysevorrichtung |
FR2823596B1 (fr) * | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | Substrat ou structure demontable et procede de realisation |
JP4457642B2 (ja) * | 2003-11-10 | 2010-04-28 | ソニー株式会社 | 半導体装置、およびその製造方法 |
US7087134B2 (en) * | 2004-03-31 | 2006-08-08 | Hewlett-Packard Development Company, L.P. | System and method for direct-bonding of substrates |
EP1605502A1 (de) * | 2004-06-08 | 2005-12-14 | Interuniversitair Microelektronica Centrum Vzw | Transfermethode zur Herstellung von elektronischen Geräten |
JP2007322575A (ja) * | 2006-05-31 | 2007-12-13 | Hitachi Displays Ltd | 表示装置 |
US9299594B2 (en) * | 2010-07-27 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate bonding system and method of modifying the same |
-
2012
- 2012-12-21 DE DE102012112989.4A patent/DE102012112989A1/de not_active Ceased
-
2013
- 2013-12-16 JP JP2015548392A patent/JP2016503961A/ja active Pending
- 2013-12-16 KR KR1020147027831A patent/KR20150097381A/ko not_active Application Discontinuation
- 2013-12-16 US US14/388,107 patent/US20150047784A1/en not_active Abandoned
- 2013-12-16 SG SG2014013056A patent/SG2014013056A/en unknown
- 2013-12-16 WO PCT/EP2013/076629 patent/WO2014095668A1/de active Application Filing
- 2013-12-16 CN CN201380018729.5A patent/CN104380457A/zh active Pending
- 2013-12-16 AT ATA9019/2013A patent/AT516064B1/de active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5661333A (en) * | 1994-01-26 | 1997-08-26 | Commissariat A L'energie Atomique | Substrate for integrated components comprising a thin film and an intermediate film |
US5856229A (en) * | 1994-03-10 | 1999-01-05 | Canon Kabushiki Kaisha | Process for production of semiconductor substrate |
DE19654791A1 (de) * | 1996-03-18 | 1997-09-25 | Mitsubishi Electric Corp | Verfahren zur Herstellung einer Halbleitervorrichtung |
DE19958803C1 (de) * | 1999-12-07 | 2001-08-30 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung |
US20080309867A1 (en) * | 2005-11-22 | 2008-12-18 | Vida Kampstra | Process for fabricating a flexible electronic device of the screen type, including a plurality of thin-film components |
Also Published As
Publication number | Publication date |
---|---|
JP2016503961A (ja) | 2016-02-08 |
AT516064B1 (de) | 2016-02-15 |
WO2014095668A1 (de) | 2014-06-26 |
KR20150097381A (ko) | 2015-08-26 |
DE102012112989A1 (de) | 2014-06-26 |
CN104380457A (zh) | 2015-02-25 |
SG2014013056A (en) | 2014-10-30 |
US20150047784A1 (en) | 2015-02-19 |
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