AT315917B - Planartransistor mit vergrabener Schicht - Google Patents

Planartransistor mit vergrabener Schicht

Info

Publication number
AT315917B
AT315917B AT615469A AT615469A AT315917B AT 315917 B AT315917 B AT 315917B AT 615469 A AT615469 A AT 615469A AT 615469 A AT615469 A AT 615469A AT 315917 B AT315917 B AT 315917B
Authority
AT
Austria
Prior art keywords
buried layer
planar transistor
planar
transistor
buried
Prior art date
Application number
AT615469A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT315917B publication Critical patent/AT315917B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
AT615469A 1968-06-27 1969-06-27 Planartransistor mit vergrabener Schicht AT315917B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR156891 1968-06-27

Publications (1)

Publication Number Publication Date
AT315917B true AT315917B (de) 1974-06-25

Family

ID=8651745

Family Applications (1)

Application Number Title Priority Date Filing Date
AT615469A AT315917B (de) 1968-06-27 1969-06-27 Planartransistor mit vergrabener Schicht

Country Status (8)

Country Link
US (1) US3602779A (de)
AT (1) AT315917B (de)
BE (1) BE735143A (de)
CH (1) CH493942A (de)
ES (1) ES368826A1 (de)
FR (1) FR1583247A (de)
NL (1) NL6909117A (de)
SE (1) SE359687B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946425A (en) * 1969-03-12 1976-03-23 Hitachi, Ltd. Multi-emitter transistor having heavily doped N+ regions surrounding base region of transistors
US3728592A (en) * 1969-05-09 1973-04-17 Ibm Semiconductor structure having reduced carrier lifetime
US3838440A (en) * 1972-10-06 1974-09-24 Fairchild Camera Instr Co A monolithic mos/bipolar integrated circuit structure
DE3841777C2 (de) * 1988-12-12 1994-06-23 Telefunken Microelectron Halbleiteranordnung mit vertikalem npn-Planartransistor

Also Published As

Publication number Publication date
DE1933805A1 (de) 1970-02-05
BE735143A (de) 1969-12-29
SE359687B (de) 1973-09-03
DE1933805B2 (de) 1976-09-30
ES368826A1 (es) 1971-05-16
US3602779A (en) 1971-08-31
NL6909117A (de) 1969-12-30
FR1583247A (de) 1969-10-24
CH493942A (de) 1970-07-15

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee