AR098225A1 - Disposición de recubrimiento al vacío y tratamiento con plasma, y método de recubrimiento de un sustrato - Google Patents
Disposición de recubrimiento al vacío y tratamiento con plasma, y método de recubrimiento de un sustratoInfo
- Publication number
- AR098225A1 AR098225A1 ARP140104054A ARP140104054A AR098225A1 AR 098225 A1 AR098225 A1 AR 098225A1 AR P140104054 A ARP140104054 A AR P140104054A AR P140104054 A ARP140104054 A AR P140104054A AR 098225 A1 AR098225 A1 AR 098225A1
- Authority
- AR
- Argentina
- Prior art keywords
- magnetron
- cathode
- arc discharge
- coating
- substrate
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32587—Triode systems
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/3233—Discharge generated by other radiation using charged particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/88—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by patterning layers, e.g. by etching conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
Un sistema de recubrimiento al vacío y tratamiento con plasma incluye un cátodo de magnetrón con un borde largo y un borde corto. El polo magnético del magnetrón resulta en una barrera electromagnética. Al menos una descarga de arco remoto se genera por separado del cátodo de magnetrón y en estrecha proximidad al cátodo de modo que la misma está confinada dentro de un volumen adyacente al magnetrón blanco. La descarga de arco remoto se extiende paralela al borde largo del blanco del magnetrón y está definida por la superficie del blanco en un lado y la barrera electromagnética en todos los otros lados. Hay una cubierta del cátodo y una cubierta del ánodo de descarga de arco remoto que se extienden sobre la descarga de arco y a través del borde corto del cátodo de magnetrón. Fuera del conjunto de plasma hay un sistema magnético que crea líneas de campo magnético que se extienden hacia el plasma y lo confina en frente del sustrato. Reivindicación 30: Un método de recubrimiento de un sustrato caracterizado porque comprende: alimentar un cátodo, alimentar una descarga de arco, alimentar una bobina magnética, hacer fluir el gas en una cámara de vacío, bombear el gas desde una cámara de vacío, y depositar un recubrimiento sobre un sustrato.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/064,617 US9793098B2 (en) | 2012-09-14 | 2013-10-28 | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
Publications (1)
Publication Number | Publication Date |
---|---|
AR098225A1 true AR098225A1 (es) | 2016-05-18 |
Family
ID=51795571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ARP140104054A AR098225A1 (es) | 2013-10-28 | 2014-10-28 | Disposición de recubrimiento al vacío y tratamiento con plasma, y método de recubrimiento de un sustrato |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP2866246B1 (es) |
JP (1) | JP6408862B2 (es) |
CN (1) | CN104561916B (es) |
AR (1) | AR098225A1 (es) |
BR (1) | BR102014026946A2 (es) |
CA (1) | CA2867451C (es) |
CL (1) | CL2014002921A1 (es) |
ES (1) | ES2792911T3 (es) |
PL (1) | PL2866246T3 (es) |
RU (1) | RU2695685C2 (es) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201713385D0 (en) * | 2017-08-21 | 2017-10-04 | Gencoa Ltd | Ion-enhanced deposition |
WO2019158225A1 (en) * | 2018-02-13 | 2019-08-22 | Evatec Ag | Methods of and apparatus for magnetron sputtering |
EP3900014A1 (en) * | 2018-12-21 | 2021-10-27 | Evatec AG | Vacuum treatment apparatus and method for vacuum plasma treating at least one substrate or for manufacturing a substrate |
SE542881C2 (en) * | 2018-12-27 | 2020-08-04 | Nils Brenning | Ion thruster and method for providing thrust |
US11534755B2 (en) * | 2019-04-16 | 2022-12-27 | Boe Technology Group Co., Ltd. | Micro-channel device and manufacturing method thereof and micro-fluidic system |
US11255016B2 (en) * | 2019-10-04 | 2022-02-22 | Mks Instruments, Inc. | Microwave magnetron with constant anodic impedance and systems using the same |
RU2752334C1 (ru) * | 2020-05-08 | 2021-07-26 | Федеральное государственное бюджетное учреждение науки Институт физического материаловедения Сибирского отделения Российской академии наук | Газоразрядное распылительное устройство на основе планарного магнетрона с ионным источником |
CN112251725A (zh) * | 2020-09-22 | 2021-01-22 | 安徽英力电子科技股份有限公司 | 一种电脑塑壳双层电磁屏蔽层溅镀工艺 |
WO2022117130A1 (en) * | 2020-12-03 | 2022-06-09 | Univerzita Palackého v Olomouci | Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions |
RU2763357C1 (ru) * | 2021-04-13 | 2021-12-28 | Александр Васильевич Вахрушев | Способ получения высококачественных пленок методом механической вибрации подложки |
CN113442247A (zh) * | 2021-06-01 | 2021-09-28 | 周顺田 | 一种竹木制玩具用防腐剂有效利用的防腐设备 |
CN117204124A (zh) * | 2021-09-28 | 2023-12-08 | 岛津产业机械***株式会社 | 等离子体处理装置 |
US20230197425A1 (en) * | 2021-12-17 | 2023-06-22 | Vapor Technologies, Inc. | Multi racetrack cathodic arc |
CN114540761A (zh) * | 2022-01-12 | 2022-05-27 | 苏州市彩衣真空科技有限公司 | 超薄pet膜表面非晶四面体碳结构的涂层工艺 |
CN114632949B (zh) * | 2022-04-18 | 2022-12-16 | 东南大学 | 一种增材制造金属零件表面防腐防污复合处理方法 |
JP7369411B1 (ja) | 2023-02-28 | 2023-10-26 | 株式会社アドバンスト・スパッタテック | スパッタリング成膜源および成膜装置 |
Family Cites Families (26)
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US4448799A (en) * | 1983-04-21 | 1984-05-15 | Multi-Arc Vacuum Systems Inc. | Arc-initiating trigger apparatus and method for electric arc vapor deposition coating systems |
DD219354A1 (de) * | 1983-07-20 | 1985-02-27 | Hochvakuum Dresden Veb | Verfahren zur regelung der plasmaparameter in vakuumbeschichtungseinrichtungen mit bogenentladungen |
DE3863725D1 (de) * | 1987-08-26 | 1991-08-22 | Balzers Hochvakuum | Verfahren zur aufbringung von schichten auf substraten und vakuumbeschichtungsanlage zur durchfuehrung des verfahrens. |
JPH0273964A (ja) * | 1988-09-09 | 1990-03-13 | Asahi Glass Co Ltd | 回転カソードを用いた薄膜形成装置 |
JPH0344463A (ja) * | 1989-07-13 | 1991-02-26 | Asahi Glass Co Ltd | シートプラズマを利用した薄膜形成方法 |
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CA2065581C (en) * | 1991-04-22 | 2002-03-12 | Andal Corp. | Plasma enhancement apparatus and method for physical vapor deposition |
DE4235199C1 (es) * | 1992-10-19 | 1993-04-22 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | |
US5328712A (en) * | 1993-02-24 | 1994-07-12 | Stevison Ham Company | Method of making a bone-in meat product |
RU2138094C1 (ru) * | 1997-02-04 | 1999-09-20 | Научно-исследовательский институт ядерной физики при Томском политехническом университете | Установка для нанесения тонкослойных покрытий |
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RU2131492C1 (ru) * | 1998-02-10 | 1999-06-10 | Закрытое акционерное общество Научно-производственный центр информационных и транспортных систем (НПЦ ИНФОТРАНС) | Способ выгрузки-укладки рельсовых плетей |
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CA2305938C (en) * | 2000-04-10 | 2007-07-03 | Vladimir I. Gorokhovsky | Filtered cathodic arc deposition method and apparatus |
JP4290323B2 (ja) * | 2000-11-01 | 2009-07-01 | キヤノンアネルバ株式会社 | スパッタ成膜方法 |
JP5309320B2 (ja) * | 2005-11-15 | 2013-10-09 | 大学共同利用機関法人 高エネルギー加速器研究機構 | 炭素フォイルの作製方法、炭素フォイル、この炭素フォイルを利用した荷電変換用ストリッパーフォイル、及び炭素フォイルの作製装置 |
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JP5261179B2 (ja) * | 2007-03-28 | 2013-08-14 | 新明和工業株式会社 | シートプラズマ装置及びシート状プラズマ調整方法 |
KR101499272B1 (ko) * | 2007-05-25 | 2015-03-05 | 오를리콘 트레이딩 아크티엔게젤샤프트, 트뤼프바흐 | 진공 처리 장치 및 진공 처리 방법 |
CN201762438U (zh) * | 2010-08-04 | 2011-03-16 | 中国科学院金属研究所 | 电弧离子镀膜装置 |
US20120199070A1 (en) | 2011-02-03 | 2012-08-09 | Vapor Technologies, Inc. | Filter for arc source |
EP2565291A1 (en) * | 2011-08-31 | 2013-03-06 | Hauzer Techno Coating BV | Vaccum coating apparatus and method for depositing nanocomposite coatings |
CA2846177C (en) * | 2013-03-15 | 2019-09-17 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
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2014
- 2014-10-10 CA CA2867451A patent/CA2867451C/en not_active Expired - Fee Related
- 2014-10-27 JP JP2014217893A patent/JP6408862B2/ja not_active Expired - Fee Related
- 2014-10-27 RU RU2014143206A patent/RU2695685C2/ru active
- 2014-10-28 AR ARP140104054A patent/AR098225A1/es unknown
- 2014-10-28 CL CL2014002921A patent/CL2014002921A1/es unknown
- 2014-10-28 ES ES14190737T patent/ES2792911T3/es active Active
- 2014-10-28 CN CN201410592209.1A patent/CN104561916B/zh active Active
- 2014-10-28 PL PL14190737T patent/PL2866246T3/pl unknown
- 2014-10-28 BR BR102014026946A patent/BR102014026946A2/pt not_active Application Discontinuation
- 2014-10-28 EP EP14190737.8A patent/EP2866246B1/en active Active
Also Published As
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BR102014026946A2 (pt) | 2015-09-15 |
JP6408862B2 (ja) | 2018-10-17 |
RU2014143206A3 (es) | 2018-08-31 |
JP2015086471A (ja) | 2015-05-07 |
PL2866246T3 (pl) | 2020-08-24 |
ES2792911T3 (es) | 2020-11-12 |
RU2014143206A (ru) | 2016-05-20 |
RU2695685C2 (ru) | 2019-07-25 |
CA2867451C (en) | 2021-06-29 |
CA2867451A1 (en) | 2015-04-28 |
CL2014002921A1 (es) | 2015-01-16 |
CN104561916A (zh) | 2015-04-29 |
EP2866246B1 (en) | 2020-02-26 |
EP2866246A1 (en) | 2015-04-29 |
CN104561916B (zh) | 2018-09-18 |
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