AR083739A1 - Placa de vidrio y proceso para su produccion - Google Patents
Placa de vidrio y proceso para su produccionInfo
- Publication number
- AR083739A1 AR083739A1 ARP110103948A ARP110103948A AR083739A1 AR 083739 A1 AR083739 A1 AR 083739A1 AR P110103948 A ARP110103948 A AR P110103948A AR P110103948 A ARP110103948 A AR P110103948A AR 083739 A1 AR083739 A1 AR 083739A1
- Authority
- AR
- Argentina
- Prior art keywords
- glass plate
- cao
- mgo
- content
- na2o
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000011521 glass Substances 0.000 abstract 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 4
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 4
- 229910052593 corundum Inorganic materials 0.000 abstract 4
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 4
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 239000005368 silicate glass Substances 0.000 abstract 2
- 238000002834 transmittance Methods 0.000 abstract 2
- 238000006124 Pilkington process Methods 0.000 abstract 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/0092—Compositions for glass with special properties for glass with improved high visible transmittance, e.g. extra-clear glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Glass Compositions (AREA)
Abstract
Proporcionar una placa de vidrio, por la cual en un caso donde el contenido de hierro está en el mismo nivel que una placa de vidrio de silicato sodocálcico convencional, se pueda obtener una transmitancia solar más alta que la de la placa de vidrio convencional, o en un caso en que el contenido de hierro es mayor de la placa de vidrio convencional, se puede obtener que la transmitancia solar esté en el mismo nivel que la placa de vidrio convencional, y la productividad sea buena; y un proceso para su producción. Una placa de vidrio hecha de vidrio de silicato sodocálcico que contiene al menos MgO, CaO, Na2O y Al2O3 producido por un proceso de flotado o un método de estirado descendente, donde [MgO] es al menos 4,5%, [MgO]/[CaO] es mayor de 1, y Q = ([MgO] / [CaO]) x ([CaO] + [Na2O] - [Al2O3]) es al menos 20, donde [MgO] es el contenido de MgO, [CaO] es el contenido de CaO, [Na2O] es el contenido de Na2O,y [Al2O3] es el contenido de Al2O3 (cada uno representado por el porcentaje de masa sobre la base de óxido).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010240978 | 2010-10-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
AR083739A1 true AR083739A1 (es) | 2013-03-20 |
Family
ID=45993937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ARP110103948A AR083739A1 (es) | 2010-10-27 | 2011-10-26 | Placa de vidrio y proceso para su produccion |
Country Status (6)
Country | Link |
---|---|
US (2) | US8828898B2 (es) |
EP (1) | EP2634150B1 (es) |
JP (2) | JP5880439B2 (es) |
CN (2) | CN103189324B (es) |
AR (1) | AR083739A1 (es) |
WO (1) | WO2012057232A1 (es) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MX2012013163A (es) * | 2010-05-20 | 2013-03-21 | Cardinal Fg Company | Sustratos de vidrio para aplicaciones de alta temperatura. |
WO2013161967A1 (ja) | 2012-04-27 | 2013-10-31 | 旭硝子株式会社 | ガラス板 |
JP6233312B2 (ja) * | 2012-09-14 | 2017-11-22 | 旭硝子株式会社 | 化学強化用ガラス及び化学強化ガラス並びに化学強化用ガラスの製造方法 |
CN106132888A (zh) | 2014-03-28 | 2016-11-16 | 旭硝子株式会社 | 化学强化用玻璃和化学强化玻璃以及化学强化玻璃的制造方法 |
CN106068245A (zh) * | 2014-03-31 | 2016-11-02 | 旭硝子欧洲玻璃公司 | 可化学回火的玻璃板 |
JP6607356B2 (ja) | 2014-06-27 | 2019-11-20 | Agc株式会社 | ガラス、および、それを用いた化学強化ガラス |
CN106470951B (zh) * | 2014-07-04 | 2021-02-09 | Agc株式会社 | 化学强化用玻璃和化学强化玻璃 |
WO2016006538A1 (ja) | 2014-07-07 | 2016-01-14 | 旭硝子株式会社 | 顔料プリント用ガラス板、顔料プリントガラス板、その製造方法および画像表示装置 |
WO2016010050A1 (ja) * | 2014-07-18 | 2016-01-21 | 旭硝子株式会社 | 防眩処理用ガラス、および、それを用いた防眩ガラス |
WO2016177592A1 (en) * | 2015-05-05 | 2016-11-10 | Agc Glass Europe | Glass sheet capable of having controlled warping through chemical strengthening |
WO2017038621A1 (ja) * | 2015-08-31 | 2017-03-09 | 旭硝子株式会社 | Uv耐性を有するガラス板 |
JP6949014B2 (ja) * | 2015-10-22 | 2021-10-13 | コーニング インコーポレイテッド | 高透過率ガラス |
CN107162407A (zh) * | 2017-04-14 | 2017-09-15 | 中建材(宜兴)新能源有限公司 | 一种超薄光伏压延玻璃 |
US11299018B2 (en) | 2017-07-28 | 2022-04-12 | Pilkington Group Limited | Window assembly |
CN109851216B (zh) * | 2019-01-24 | 2020-06-09 | 中国洛阳浮法玻璃集团有限责任公司 | 一种用于浮法生产超白玻璃用复合澄清剂 |
JP2021011403A (ja) * | 2019-07-05 | 2021-02-04 | Agc株式会社 | Cspミラー用ガラス基板、その製造方法、及びcspミラー |
CN115286239B (zh) * | 2022-08-04 | 2023-08-25 | 清远南玻节能新材料有限公司 | 玻璃及其扫光方法、盖板和电子设备 |
Family Cites Families (34)
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US4192689A (en) * | 1978-05-30 | 1980-03-11 | Ppg Industries, Inc. | Ion exchange strengthening of soda-lime-silica glass |
JPS61256940A (ja) * | 1985-05-07 | 1986-11-14 | Asahi Glass Co Ltd | 輝石系結晶化ガラスの製造法 |
JPH0692257B2 (ja) * | 1985-11-07 | 1994-11-16 | 旭硝子株式会社 | 輝石系結晶化ガラスの製造法 |
JPS62246839A (ja) * | 1986-04-17 | 1987-10-28 | Central Glass Co Ltd | 易強化ガラス組成物 |
GB8728892D0 (en) * | 1987-12-10 | 1988-01-27 | Pilkington Plc | Producing molten glass |
JPH03199136A (ja) * | 1989-12-28 | 1991-08-30 | Asahi Glass Co Ltd | 輝石系結晶化ガラスの製造法 |
US5030594A (en) | 1990-06-29 | 1991-07-09 | Ppg Industries, Inc. | Highly transparent, edge colored glass |
JP3150684B2 (ja) | 1990-07-26 | 2001-03-26 | 日本碍子株式会社 | 劣化反応碍子 |
FR2721600B1 (fr) | 1994-06-23 | 1996-08-09 | Saint Gobain Vitrage | Composition de verre clair destinée à la fabrication de vitrages. |
KR970702221A (ko) * | 1995-02-10 | 1997-05-13 | 세야 히로미찌 | 내찰상성 유리(scratch-resistant glass) |
JPH11310429A (ja) * | 1998-04-27 | 1999-11-09 | Asahi Glass Co Ltd | 基板に用いるためのガラス組成物 |
JP2000159538A (ja) * | 1998-11-27 | 2000-06-13 | Asahi Glass Co Ltd | 太陽電池用ガラス |
JP2007161583A (ja) * | 1999-02-01 | 2007-06-28 | Nippon Electric Glass Co Ltd | 蛍光ランプ用ガラス、蛍光ランプ用ガラス管、及び蛍光ランプ |
JP2000290038A (ja) * | 1999-02-01 | 2000-10-17 | Nippon Electric Glass Co Ltd | 蛍光ランプ用ガラス、蛍光ランプ用ガラス管、及び蛍光ランプ |
JP2001180967A (ja) | 1999-12-21 | 2001-07-03 | Central Glass Co Ltd | ガラス組成物 |
JP4087113B2 (ja) | 2000-03-06 | 2008-05-21 | 日本板硝子株式会社 | 高透過板ガラスおよびその製造方法 |
DE10017701C2 (de) * | 2000-04-08 | 2002-03-07 | Schott Glas | Gefloatetes Flachglas |
EP1245545B1 (en) * | 2001-03-30 | 2011-08-10 | Asahi Glass Company Ltd. | Glass plate and method for tempering a glass plate |
JP4802403B2 (ja) | 2001-06-26 | 2011-10-26 | 旭硝子株式会社 | 金属線入り板ガラス |
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WO2006035882A1 (ja) * | 2004-09-29 | 2006-04-06 | Nippon Electric Glass Co., Ltd. | 半導体封止用ガラス及び半導体封止用外套管並びに半導体電子部品 |
US20060211563A1 (en) * | 2005-03-21 | 2006-09-21 | Mehran Arbab | Metal nanostructured colorants for high redox glass composition |
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JP2007238398A (ja) | 2006-03-10 | 2007-09-20 | Nippon Sheet Glass Co Ltd | ソーダ石灰系ガラス組成物 |
CN101410333A (zh) * | 2006-03-27 | 2009-04-15 | 旭硝子株式会社 | 玻璃的制造方法 |
MY157935A (en) * | 2006-11-22 | 2016-08-15 | Asahi Glass Co Ltd | Glass for information recording media substrate |
US7666511B2 (en) * | 2007-05-18 | 2010-02-23 | Corning Incorporated | Down-drawable, chemically strengthened glass for cover plate |
KR101207831B1 (ko) * | 2007-11-06 | 2012-12-04 | 아사히 가라스 가부시키가이샤 | 기판용 유리판 |
JP2009155148A (ja) * | 2007-12-26 | 2009-07-16 | Central Glass Co Ltd | ガラス組成物 |
JP5444846B2 (ja) * | 2008-05-30 | 2014-03-19 | 旭硝子株式会社 | ディスプレイ装置用ガラス板 |
CN102256908A (zh) * | 2008-12-25 | 2011-11-23 | 旭硝子株式会社 | 玻璃基板及其制造方法 |
JP2010208906A (ja) * | 2009-03-11 | 2010-09-24 | Asahi Glass Co Ltd | 光デバイス用基板ガラス |
JP5708484B2 (ja) * | 2009-04-28 | 2015-04-30 | 旭硝子株式会社 | 基板用ガラス板 |
-
2011
- 2011-10-26 AR ARP110103948A patent/AR083739A1/es not_active Application Discontinuation
- 2011-10-26 CN CN201180051164.1A patent/CN103189324B/zh active Active
- 2011-10-26 CN CN201510885045.6A patent/CN105330142B/zh active Active
- 2011-10-26 WO PCT/JP2011/074724 patent/WO2012057232A1/ja active Application Filing
- 2011-10-26 JP JP2012540918A patent/JP5880439B2/ja active Active
- 2011-10-26 EP EP11836365.4A patent/EP2634150B1/en active Active
-
2013
- 2013-03-15 US US13/839,832 patent/US8828898B2/en active Active
-
2014
- 2014-07-18 US US14/335,070 patent/US9174867B2/en active Active
-
2016
- 2016-02-04 JP JP2016020309A patent/JP6368944B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JPWO2012057232A1 (ja) | 2014-05-12 |
JP5880439B2 (ja) | 2016-03-09 |
JP6368944B2 (ja) | 2018-08-08 |
JP2016084281A (ja) | 2016-05-19 |
CN105330142A (zh) | 2016-02-17 |
CN103189324B (zh) | 2016-01-20 |
US20140329661A1 (en) | 2014-11-06 |
WO2012057232A1 (ja) | 2012-05-03 |
US20130203584A1 (en) | 2013-08-08 |
EP2634150B1 (en) | 2021-11-24 |
US8828898B2 (en) | 2014-09-09 |
CN103189324A (zh) | 2013-07-03 |
EP2634150A4 (en) | 2015-06-17 |
CN105330142B (zh) | 2018-11-23 |
US9174867B2 (en) | 2015-11-03 |
EP2634150A1 (en) | 2013-09-04 |
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Legal Events
Date | Code | Title | Description |
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FA | Abandonment or withdrawal |