AR083739A1 - Placa de vidrio y proceso para su produccion - Google Patents

Placa de vidrio y proceso para su produccion

Info

Publication number
AR083739A1
AR083739A1 ARP110103948A ARP110103948A AR083739A1 AR 083739 A1 AR083739 A1 AR 083739A1 AR P110103948 A ARP110103948 A AR P110103948A AR P110103948 A ARP110103948 A AR P110103948A AR 083739 A1 AR083739 A1 AR 083739A1
Authority
AR
Argentina
Prior art keywords
glass plate
cao
mgo
content
na2o
Prior art date
Application number
ARP110103948A
Other languages
English (en)
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=45993937&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AR083739(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of AR083739A1 publication Critical patent/AR083739A1/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/0092—Compositions for glass with special properties for glass with improved high visible transmittance, e.g. extra-clear glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Glass Compositions (AREA)

Abstract

Proporcionar una placa de vidrio, por la cual en un caso donde el contenido de hierro está en el mismo nivel que una placa de vidrio de silicato sodocálcico convencional, se pueda obtener una transmitancia solar más alta que la de la placa de vidrio convencional, o en un caso en que el contenido de hierro es mayor de la placa de vidrio convencional, se puede obtener que la transmitancia solar esté en el mismo nivel que la placa de vidrio convencional, y la productividad sea buena; y un proceso para su producción. Una placa de vidrio hecha de vidrio de silicato sodocálcico que contiene al menos MgO, CaO, Na2O y Al2O3 producido por un proceso de flotado o un método de estirado descendente, donde [MgO] es al menos 4,5%, [MgO]/[CaO] es mayor de 1, y Q = ([MgO] / [CaO]) x ([CaO] + [Na2O] - [Al2O3]) es al menos 20, donde [MgO] es el contenido de MgO, [CaO] es el contenido de CaO, [Na2O] es el contenido de Na2O,y [Al2O3] es el contenido de Al2O3 (cada uno representado por el porcentaje de masa sobre la base de óxido).
ARP110103948A 2010-10-27 2011-10-26 Placa de vidrio y proceso para su produccion AR083739A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010240978 2010-10-27

Publications (1)

Publication Number Publication Date
AR083739A1 true AR083739A1 (es) 2013-03-20

Family

ID=45993937

Family Applications (1)

Application Number Title Priority Date Filing Date
ARP110103948A AR083739A1 (es) 2010-10-27 2011-10-26 Placa de vidrio y proceso para su produccion

Country Status (6)

Country Link
US (2) US8828898B2 (es)
EP (1) EP2634150B1 (es)
JP (2) JP5880439B2 (es)
CN (2) CN103189324B (es)
AR (1) AR083739A1 (es)
WO (1) WO2012057232A1 (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2012013163A (es) * 2010-05-20 2013-03-21 Cardinal Fg Company Sustratos de vidrio para aplicaciones de alta temperatura.
WO2013161967A1 (ja) 2012-04-27 2013-10-31 旭硝子株式会社 ガラス板
JP6233312B2 (ja) * 2012-09-14 2017-11-22 旭硝子株式会社 化学強化用ガラス及び化学強化ガラス並びに化学強化用ガラスの製造方法
CN106132888A (zh) 2014-03-28 2016-11-16 旭硝子株式会社 化学强化用玻璃和化学强化玻璃以及化学强化玻璃的制造方法
CN106068245A (zh) * 2014-03-31 2016-11-02 旭硝子欧洲玻璃公司 可化学回火的玻璃板
JP6607356B2 (ja) 2014-06-27 2019-11-20 Ａｇｃ株式会社 ガラス、および、それを用いた化学強化ガラス
CN106470951B (zh) * 2014-07-04 2021-02-09 Ａｇｃ株式会社 化学强化用玻璃和化学强化玻璃
WO2016006538A1 (ja) 2014-07-07 2016-01-14 旭硝子株式会社 顔料プリント用ガラス板、顔料プリントガラス板、その製造方法および画像表示装置
WO2016010050A1 (ja) * 2014-07-18 2016-01-21 旭硝子株式会社 防眩処理用ガラス、および、それを用いた防眩ガラス
WO2016177592A1 (en) * 2015-05-05 2016-11-10 Agc Glass Europe Glass sheet capable of having controlled warping through chemical strengthening
WO2017038621A1 (ja) * 2015-08-31 2017-03-09 旭硝子株式会社 Ｕｖ耐性を有するガラス板
JP6949014B2 (ja) * 2015-10-22 2021-10-13 コーニング インコーポレイテッド 高透過率ガラス
CN107162407A (zh) * 2017-04-14 2017-09-15 中建材（宜兴）新能源有限公司 一种超薄光伏压延玻璃
US11299018B2 (en) 2017-07-28 2022-04-12 Pilkington Group Limited Window assembly
CN109851216B (zh) * 2019-01-24 2020-06-09 中国洛阳浮法玻璃集团有限责任公司 一种用于浮法生产超白玻璃用复合澄清剂
JP2021011403A (ja) * 2019-07-05 2021-02-04 Ａｇｃ株式会社 Ｃｓｐミラー用ガラス基板、その製造方法、及びｃｓｐミラー
CN115286239B (zh) * 2022-08-04 2023-08-25 清远南玻节能新材料有限公司 玻璃及其扫光方法、盖板和电子设备

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JP5708484B2 (ja) * 2009-04-28 2015-04-30 旭硝子株式会社 基板用ガラス板

Also Published As

Publication number Publication date
JPWO2012057232A1 (ja) 2014-05-12
JP5880439B2 (ja) 2016-03-09
JP6368944B2 (ja) 2018-08-08
JP2016084281A (ja) 2016-05-19
CN105330142A (zh) 2016-02-17
CN103189324B (zh) 2016-01-20
US20140329661A1 (en) 2014-11-06
WO2012057232A1 (ja) 2012-05-03
US20130203584A1 (en) 2013-08-08
EP2634150B1 (en) 2021-11-24
US8828898B2 (en) 2014-09-09
CN103189324A (zh) 2013-07-03
EP2634150A4 (en) 2015-06-17
CN105330142B (zh) 2018-11-23
US9174867B2 (en) 2015-11-03
EP2634150A1 (en) 2013-09-04

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Legal Events

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