WO2023248989A1 - Cooling device and semiconductor device - Google Patents

Cooling device and semiconductor device Download PDF

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Publication number
WO2023248989A1
WO2023248989A1 PCT/JP2023/022655 JP2023022655W WO2023248989A1 WO 2023248989 A1 WO2023248989 A1 WO 2023248989A1 JP 2023022655 W JP2023022655 W JP 2023022655W WO 2023248989 A1 WO2023248989 A1 WO 2023248989A1
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WIPO (PCT)
Prior art keywords
flow path
region
casing
cooling device
refrigerant
Prior art date
Application number
PCT/JP2023/022655
Other languages
French (fr)
Japanese (ja)
Inventor
史善 吉岡
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ニデック株式会社
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Publication of WO2023248989A1 publication Critical patent/WO2023248989A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating

Definitions

  • the present disclosure relates to a cooling device and a semiconductor device.
  • IGBTs Insulated Gate Bipolar Transistors
  • a refrigerant-type cooling device has an internal flow path, and a refrigerant (for example, cooling water) flowing through the flow path cools the semiconductor element by transferring heat generated in the semiconductor element to the outside.
  • Japanese Publication Japanese Patent Application Publication No. 2021-52060
  • the present disclosure provides a technique that can suppress variations in cooling temperature among a plurality of objects to be cooled.
  • a cooling device that cools a heat generating element, and includes a housing, a first flow path, and a second flow path.
  • the housing has a refrigerant inlet and an outlet, and includes a first region in contact with the first heating element and a second region in contact with the second heating element.
  • the first channel is a channel that connects the inlet and the outlet, and overlaps with the first region and the second region when the casing is viewed from above.
  • the second flow path merges with the first flow path at a position downstream of the first region and upstream of the second region.
  • the second flow path has a guide portion that guides the refrigerant flowing through the second flow path to the first flow path.
  • FIG. 1 is a diagram illustrating an example of a circuit configuration of a power conversion device according to a first embodiment.
  • FIG. 2 is a schematic side view of the cooling device according to the first embodiment.
  • FIG. 3 is a schematic plan view of the base plate according to the first embodiment.
  • 4 is a schematic cross-sectional view taken along the line IV-IV shown in FIG. 2.
  • FIG. 5 is a schematic cross-sectional view taken along the line VV shown in FIG.
  • FIG. 6 is a schematic cross-sectional view taken along the line VI-VI shown in FIG. 7 is a schematic cross-sectional view taken along the line VII-VII shown in FIG. 4.
  • FIG. FIG. 8 is a schematic enlarged view of the second flow path and the third flow path according to the first embodiment.
  • FIG. 9 is a schematic cross-sectional plan view showing the internal structure of the cooling device according to the second embodiment.
  • FIG. 10 is a schematic cross-sectional view taken along the line XX shown in FIG.
  • FIG. 11 is a schematic cross-sectional view taken along the line XI-XI shown in FIG.
  • FIG. 12 is a schematic cross-sectional view taken along the line XII-XII shown in FIG.
  • FIG. 13 is a schematic cross-sectional view taken along the line XIII-XIII shown in FIG.
  • FIG. 14 is a schematic enlarged view of the second flow path and the third flow path according to the second embodiment.
  • FIG. 15 is a graph showing the relationship between the flow rate of the refrigerant and the thermal resistance of the switching element.
  • FIG. 16 is a graph showing the conditions and the results of calculating the temperature of the switching element under the conditions.
  • semiconductor devices including semiconductor elements such as insulated gate bipolar transistors (IGBTs) have been known.
  • IGBTs insulated gate bipolar transistors
  • Semiconductor elements generate a relatively large amount of heat during operation. For this reason, semiconductor devices equipped with cooling devices for cooling semiconductor elements have been proposed.
  • a plurality of switching elements constituting a U phase, a V phase, and a W phase may be mounted on a refrigerant-type cooling device.
  • a refrigerant-type cooling device for example, there is a risk that variations in cooling temperature will occur between the switching element located on the upstream side and the switching element located on the downstream side in the flow direction of the refrigerant. This is because the refrigerant warmed by the upstream switching element is used to cool the downstream switching element.
  • FIG. 1 is a diagram showing an example of a circuit configuration of a power conversion device 1 according to a first embodiment.
  • a power conversion device 1 shown in FIG. 1 converts DC power into AC power and outputs the converted AC power to a motor 2.
  • the power conversion device 1 is connected to a converter circuit (not shown) that converts AC power supplied from an AC power source (not shown) into DC power, and converts the DC power output from the converter circuit into AC power.
  • the generated AC power is output to the motor 2.
  • the power conversion device 1 may be directly connected to a DC power source (not shown) without using a converter circuit.
  • the power conversion device 1 includes two switching elements 3u, two switching elements 3v, and two switching elements 3w. Further, the power conversion device 1 includes two diodes 4u, two diodes 4v, two diodes 4w, and a gate driver 5. Note that the power conversion device 1 may be provided with filters (not shown) configured by coils and capacitors in the U phase, V phase, and W phase. Moreover, the power conversion device 1 may have a configuration that does not include the above-mentioned filter.
  • the two switching elements 3u constitute a U-phase half-bridge circuit
  • the two switching elements 3v constitute a V-phase half-bridge circuit
  • the two switching elements 3w constitute a W-phase half-bridge circuit.
  • the two switching elements 3u are connected in series.
  • the two switching elements 3v are connected in series, and the two switching elements 3w are also directly connected.
  • the switching elements 3u, 3v, and 3w are, for example, insulated gate bipolar transistors (IGBTs) or power MOSFETs (metal oxide semiconductor field effect transistors).
  • the switching elements 3u, 3v, and 3w are, for example, switching elements made of a silicon-based material or switching elements made of a wide bandgap semiconductor.
  • the wide bandgap semiconductor is, for example, silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ), or diamond.
  • the two diodes 4u are connected in antiparallel to the corresponding switching elements 3u.
  • the two diodes 4v are connected in antiparallel to the corresponding switching element 3v
  • the two diodes 4w are connected in antiparallel to the corresponding switching element 3w.
  • the diodes 4u, 4v, and 4w are free-wheeling diodes for protecting the switching elements 3u, 3v, and 3w.
  • switching elements 3u, 3v, and 3w when the switching elements 3u, 3v, and 3w are shown without being individually distinguished, they may be referred to as switching elements 3. Furthermore, when the diodes 4u, 4v, and 4w are shown without being individually distinguished, they may be referred to as a diode 4.
  • the gate driver 5 amplifies a gate signal output from a control section (not shown). Then, the gate driver 5 outputs the amplified gate signal to the plurality of switching elements 3.
  • FIG. 2 is a schematic side view of the cooling device 100 according to the first embodiment.
  • each drawing referred to below may show an orthogonal coordinate system in which the X-axis direction, Y-axis direction, and Z-axis direction are defined to be orthogonal to each other, and the positive Z-axis direction is the vertically upward direction. be.
  • switching elements 3 are arranged on the base plate 20 in order to make the explanation easier to understand.
  • a plurality of diodes 4 are arranged on the base plate 20.
  • Switching element 3 and diode 4 may be mounted on base plate 20 via an insulating substrate. Further, a mold resin or the like for sealing the switching element 3 and the diode 4 may be placed on the base plate 20.
  • the cooling device 100 is a refrigerant-type cooling device that cools the switching element 3, which is a heating element.
  • the switching element 3u is also an example of a first semiconductor element. Further, the switching element 3u is also an example of a first heating element.
  • the switching element 3v is an example of a second semiconductor element and also an example of a second heating element.
  • the switching element 3w is an example of a third semiconductor element and also an example of a third heating element.
  • the refrigerant is, for example, a liquid such as cooling water. Note that the refrigerant is not limited to this, and may be a gas.
  • the cooling device 100 includes a housing 10.
  • the housing 10 includes a base plate 20 and a main body portion 30.
  • the base plate 20 and the main body portion 30 are made of a metal material such as aluminum or an aluminum alloy.
  • the base plate 20 is a substantially plate-shaped member.
  • FIG. 3 is a schematic plan view of the base plate 20 according to the first embodiment. As shown in FIG. 3, base plate 20 has a first surface 201. As shown in FIG. The first surface 201 is a flat surface. A plurality of switching elements 3u, 3v, and 3w are arranged on the first surface 201.
  • the switching elements 3u, 3v, and 3w are arranged in this order along the refrigerant flow direction (here, the X-axis positive direction).
  • the two switching elements 3u are arranged in a direction (here, the Y-axis direction) orthogonal to the flow direction of the refrigerant.
  • the two switching elements 3v are arranged in a direction perpendicular to the flow direction of the refrigerant, and the two switching elements 3w are arranged in a direction perpendicular to the flow direction of the refrigerant.
  • the base plate 20 includes a first region 21, a second region 22, and a third region 23 on the first surface 201.
  • the first region 21, the second region 22, and the third region 23 are arranged at intervals from each other.
  • the first region 21 is a region in contact with the switching element 3u.
  • the second region 22 is a region in contact with the switching element 3v
  • the third region 23 is a region in contact with the switching element 3w.
  • the first region 21 may be a rectangular region that touches the outer edges of the two switching elements 3u in plan view.
  • the second region 22 may be a rectangular region in contact with the outer edge of the switching element 3v in plan view
  • the third region 23 may be a rectangular region in contact with the outer edge of the switching element 3w in plan view. There may be.
  • first region 21, second region 22, and third region 23 are not limited to the illustrated example.
  • first region 21, the second region 22, and the third region 23 may be larger than the example shown in FIG. 3 insofar as they do not overlap with each other.
  • a plurality of fins 25 are provided on a second surface 202 located opposite to the first surface 201 of the base plate 20 (see FIG. 5, etc.).
  • the plurality of fins 25 are, for example, rod-shaped. Note that the plurality of fins 25 may be plate-shaped.
  • the main body portion 30 is a substantially container-shaped member with an open top.
  • the main body portion 30 is joined to the base plate 20 by laser welding or the like.
  • a first flow path 31, a second flow path 32, and a third flow path 33 are formed inside the housing 10.
  • the main body portion 30 has grooves forming at least part of the inner wall surfaces of the first flow path 31, the second flow path 32, and the third flow path 33, and the open portion of the groove is By closing the second surface 202 of the base plate 20, a first flow path 31, a second flow path 32, and a third flow path 33 are formed.
  • the base plate 20 and the main body portion 30 may be screwed together.
  • the base plate 20 and the main body part 30 are joined by providing a plurality of screw holes around the base plate 20 and the main body part 30, and tightening the base plate 20 and the main body part 30 by inserting screws into these screw holes.
  • a ring-shaped sealing member for example, an O-ring, etc. may be interposed between the base plate 20 and the main body portion 30 in order to improve the sealing performance inside the housing 10.
  • FIG. 4 is a schematic cross-sectional view taken along the line IV-IV shown in FIG. 2. Note that in FIG. 4, the plurality of fins 25 are omitted.
  • the cooling device 100 includes a first flow path 31, two second flow paths 32, and two third flow paths 33 inside the housing 10.
  • the first flow path 31 is a flow path that connects an inlet 301 and an outlet 302 provided in the housing 10.
  • the inflow port 301 opens on the side surface of the housing 10 on the negative side of the X-axis
  • the outflow port 302 opens on the side surface of the housing 10 on the positive side of the X-axis.
  • the first flow path 31 extends linearly along the X-axis direction, and causes the refrigerant that has flowed in from the inlet 301 to flow along the positive direction of the X-axis and leads to the outlet 302 .
  • the first flow path 31 overlaps with the first region 21, second region 22, and third region 23 in plan view. That is, the first flow path 31 is located directly below the first region 21 , the second region 22 , and the third region 23 .
  • the two second flow paths 32 branch from the first flow path 31 at a position downstream of the inlet 301 and upstream of the first region 21. Specifically, the two second flow paths 32 are arranged so as to bypass the first region 21 in a direction (Y-axis direction) perpendicular to the flow direction (X-axis direction) of the refrigerant in the first flow path 31. It branches off from the flow path 31.
  • One of the two second flow paths 32 branches from the first flow path 31 so as to bypass the first region 21 in the Y-axis positive direction, and the other one detours around the first region 21 in the Y-axis negative direction. It branches off from the first flow path 31 as shown in FIG.
  • the two second flow paths 32 merge with the first flow path 31 at a position downstream of the first region 21 and upstream of the second region 22.
  • the two second flow paths 32 are arranged at positions that do not overlap with the first region 21, second region 22, and third region 23 in plan view.
  • the main body section 30 includes a first flow path forming section 311 and a second flow path forming section 312.
  • the first flow path forming part 311 is a partition wall that separates the first flow path 31 and the second flow path 32.
  • the first flow path forming section 311 has a gap between it and the inner wall 303 of the main body section 30 . This gap corresponds to a detour portion 321 (see FIG. 8) of the second flow path 32 that detours around the first region 21.
  • the first region 21 is arranged between the two first flow path forming parts 311.
  • the second flow path forming portion 312 is a partition wall disposed downstream of the first flow path forming portion 311.
  • the second flow path forming section 312 has a gap between it and the first flow path forming section 311 . This gap corresponds to a merging portion 322 (see FIG. 8) in the second flow path 32 to the first flow path 31.
  • the two third flow paths 33 branch from the second flow path 32 and merge with the first flow path 31 .
  • the third flow path 33 branches from the second flow path 32 at a position upstream of the second region 22, extends so as to bypass the second region 22, and extends from the second region 22. It also merges with the first flow path 31 at a position downstream and upstream of the third region 23 .
  • the two third channels 33 are arranged at positions that do not overlap with the first region 21, second region 22, and third region 23 in plan view.
  • the second flow path forming section 312 described above has a gap between it and the inner wall 303 of the main body section 30. This gap corresponds to a detour portion 331 (see FIG. 8) of the third flow path 33 that detours around the second region 22.
  • the second region 22 is arranged between the two second flow path forming parts 312.
  • the main body portion 30 includes a third flow path forming portion 313.
  • the third flow path forming section 313 is a partition wall provided downstream of the second flow path forming section 312, and has a gap between it and the second flow path forming section 312. This gap corresponds to a merging portion 332 (see FIG. 8) in the third flow path 33 to the first flow path 31.
  • FIG. 5 is a schematic cross-sectional view taken along the line VV shown in FIG. 4.
  • FIG. 6 is a schematic cross-sectional view taken along the line VI-VI shown in FIG. 7 is a schematic cross-sectional view taken along the line VII-VII shown in FIG. 4.
  • FIG. 5 is a schematic cross-sectional view taken along the line VV shown in FIG. 4.
  • the first flow path 31 is located directly below the switching elements 3u to 3w, which are heating elements.
  • the heat generated in the switching elements 3u to 3w is transferred to the outside of the cooling device 100 by the refrigerant flowing through the first flow path 31.
  • the switching elements 3u to 3w are cooled.
  • a plurality of fins 25 are located in the first flow path 31 . Thereby, the cooling efficiency of the switching elements 3u to 3w by the first flow path 31 can be increased.
  • the second flow path 32 is arranged at a position shifted laterally from directly below the switching element 3u. Therefore, the refrigerant flowing through the second flow path 32 is less affected by the heat generated in the switching element 3u than the refrigerant flowing through the first flow path 31.
  • the refrigerant that has passed directly under the first region 21 in the first flow path 31 will then pass directly under the second region 22, but before passing directly under the second region 22, the refrigerant It joins with the refrigerant that has flowed in from 32 , that is, the refrigerant that has a lower temperature than the refrigerant that has passed directly under the first region 21 .
  • the cooling device 100 can cool the switching element 3v with a refrigerant at a lower temperature than when the second flow path 32 is not provided. In other words, it is possible to suppress the temperature rise of the refrigerant caused by the switching element 3u. Therefore, the cooling device 100 can suppress variations in cooling temperature between the switching element 3u and the switching element 3v arranged downstream thereof.
  • the third flow path 33 is arranged at a position shifted laterally from directly below the switching element 3v. Therefore, the refrigerant flowing through the third flow path 33 is less affected by the heat generated by the switching element 3v than the refrigerant flowing through the first flow path 31.
  • the refrigerant that has passed through the second region 22 in the first flow path 31 will then pass through the third region 23, but before passing directly under the third region 23, the refrigerant that has flowed in from the third flow path 33 will pass through the third region 23. It merges with the refrigerant, that is, the refrigerant whose temperature is lower than that of the refrigerant that passed directly under the second region 22 .
  • the cooling device 100 can cool the switching element 3w with a lower temperature refrigerant compared to the case where the third flow path 33 is not provided. In other words, it is possible to suppress the temperature rise of the refrigerant caused by the switching elements 3u and 3v. Therefore, the cooling device 100 can suppress variations in cooling temperature between the switching element 3v and the switching element 3w arranged downstream thereof.
  • the cooling device 100 in addition to the first flow path 31, the second flow path 32 and the third flow path 33 are provided, so that the switching element 3u, the switching element 3v, and It is possible to suppress variations in cooling temperature between the switching elements 3w.
  • the flow rate of the refrigerant flowing through the first flow path 31 increases as it goes downstream in the flow direction of the refrigerant. Since the thermal resistance of the switching element 3 decreases as the flow rate of the refrigerant increases, it is also possible to suppress variations in cooling temperature between the switching element 3u, the switching element 3v, and the switching element 3w.
  • the cross-sectional area of the second flow path 32 at the branch part (detour part 321 described later) from the first flow path 31 is smaller than that of the first flow path 31, and
  • the cross-sectional area of the third flow path 33 is larger than the cross-sectional area of the third flow path 33 at a branch portion from the second flow path 32 (detour portion 331 to be described later).
  • the flow rate of the refrigerant in the third flow path 33 becomes faster than the flow speed of the refrigerant in the second flow path 32, so that the cooling temperatures of the switching elements 3u, 3v, and 3w can be made more uniform. can.
  • FIG. 8 is a schematic enlarged view of the second flow path 32 and the third flow path 33 according to the first embodiment.
  • the second flow path 32 has a first guide portion 51 that guides the refrigerant flowing through the second flow path 32 to the first flow path 31.
  • the second flow path 32 includes a detour portion 321 formed between the first flow path forming portion 311 and the inner wall 303 of the housing 10, and a confluence portion 322 located downstream of the detour portion 321. has.
  • the second flow path forming portion 312 is located closer to the casing 10 than the imaginary line L1, which is an imaginary extension of the first flow path forming portion 311 along the refrigerant flow direction (X-axis positive direction) in the detour portion 321. It has a portion located on the inner wall 303 side. In this way, the second flow path 32 has a portion that collides with the flow of the refrigerant in the detour portion 321 as the first guide portion 51 .
  • the second flow path 32 can efficiently cause the refrigerant flowing through the second flow path 32 to flow into the first flow path 31. That is, even if the second flow path 32 does not have the first guide portion 51, for example, there is refrigerant flowing into the first flow path 31 through the merging portion 322, but the refrigerant flowing through the first flow path 31 It is difficult to obtain a sufficient flow rate to reduce the temperature of the
  • the second flow path 32 according to the first embodiment includes the first guide portion 51 and can actively direct the refrigerant flowing through the detour portion 321 toward the confluence portion 322. The refrigerant can flow from the flow path 32 into the first flow path 31 at a relatively high flow rate. Thereby, the second flow path 32 according to the first embodiment can efficiently lower the temperature of the refrigerant flowing through the first flow path 31.
  • the merging portion 322 of the second flow path 32 extends obliquely from the detour portion 321 toward the first flow path 31 .
  • the first flow path forming section 311 has a first wall surface 311a that forms a confluence section 322 with the second flow path forming section 312.
  • the second flow path forming section 312 has a second wall surface 312a that forms a confluence section 322 with the first flow path forming section 311.
  • the first wall surface 311a and the second wall surface 312a extend obliquely toward the first flow path 31.
  • the third flow path 33 has a second guide portion 52 that guides the refrigerant flowing through the third flow path 33 to the first flow path 31.
  • the third flow path 33 includes a detour portion 331 formed between the second flow path forming portion 312 and the inner wall 303 of the housing 10, and a confluence portion 332 located downstream of the detour portion 331. has.
  • the third flow path forming portion 313 is located closer to the casing 10 than the imaginary line L2, which is an imaginary extension of the second flow path forming portion 312 along the refrigerant flow direction (X-axis positive direction) in the detour portion 331. It has a portion located on the inner wall 303 side. In this way, the third flow path 33 has a portion that collides with the flow of the refrigerant in the detour portion 331 as the second guide portion 52 .
  • the third flow path 33 can efficiently cause the refrigerant flowing through the third flow path 33 to flow into the first flow path 31.
  • the third flow path 33 according to the first embodiment can efficiently lower the temperature of the refrigerant flowing through the first flow path 31.
  • the merging portion 332 of the third flow path 33 extends diagonally from the detour portion 331 toward the first flow path 31.
  • the second flow path forming section 312 has a third wall surface 312b that forms a confluence section 332 with the third flow path forming section 313.
  • the third flow path forming section 313 has a fourth wall surface 313a that forms a confluence section 332 with the second flow path forming section 312.
  • the third wall surface 312b and the fourth wall surface 313a extend obliquely toward the first flow path 31.
  • FIG. 9 is a schematic cross-sectional plan view showing the internal structure of a cooling device 100A according to the second embodiment.
  • the plan sectional view shown in FIG. 9 corresponds to the sectional view taken along the line IX-IX shown in FIG.
  • FIG. 10 is a schematic cross-sectional view taken along the line XX shown in FIG.
  • FIG. 11 is a schematic cross-sectional view taken along the line XI-XI shown in FIG.
  • FIG. 12 is a schematic cross-sectional view taken along the line XII-XII shown in FIG.
  • FIG. 13 is a schematic cross-sectional view taken along the line XIII-XIII shown in FIG.
  • a cooling device 100A included in a power conversion device 1A includes a first flow path 31A, a second flow path 32A, and a third flow path 33A inside a housing 10A. Equipped with.
  • the first flow path 31A is a flow path that connects the inlet 301A and the outlet 302A of the housing 10A, and overlaps with the first region 21, the second region 22, and the third region 23 in plan view.
  • a plurality of fins 25 provided on the second surface 202 of the base plate 20 are arranged in the first flow path 31A.
  • the second flow path 32A and the third flow path 33A are located directly below the first flow path 31A. That is, the second flow path 32A is arranged at a position overlapping with the first region 21 in plan view, and the third flow path 33A is arranged at a position overlapping with second region 22 in plan view.
  • the housing 10A includes a base plate 20 and a main body 30A. Further, the main body portion 30A includes a first flow path forming portion 311A, a second flow path forming portion 312A, and a third flow path forming portion 313A inside.
  • the first flow path forming section 311A, the second flow path forming section 312A, and the third flow path forming section 313A are arranged in this order along the refrigerant flow direction (X-axis direction). Further, the first flow path forming section 311A, the second flow path forming section 312A, and the third flow path forming section 313A are arranged at intervals from each other.
  • the first flow path forming portion 311A is a partition wall that separates the first flow path 31A and the second flow path 32A (see FIG. 11).
  • the second flow path forming portion 312A is a partition wall that separates the first flow path 31A and the third flow path 33A (see FIG. 12).
  • the second flow path 32A branches from the first flow path 31A at a position downstream of the inlet 301A and upstream of the first region 21. Specifically, the second flow path 32A detours around the first region 21 in a direction (Z-axis direction) perpendicular to the flow direction (X-axis direction) of the refrigerant in the first flow path 31A. Branches off from 31A. The second flow path 32A joins the first flow path 31A at a position downstream of the first region 21 and upstream of the second region 22.
  • the gap located between the inner wall 303A of the main body portion 30A and the first flow path forming portion 311A corresponds to the detour portion 321A (see FIG. 14) of the second flow path 32A. Further, the gap located between the first flow path forming part 311A and the second flow path forming part 312A corresponds to a merging part 322A (see FIG. 14) in the second flow path 32A to the first flow path 31A. .
  • the third flow path 33A branches from the second flow path 32A and merges with the first flow path 31A. Specifically, the third flow path 33A branches from the second flow path 32A at a position upstream of the second region 22, and branches off from the second flow path 32A at a position downstream of the second region 22 and upstream of the third region 23. 1 flow path 31A.
  • the gap located between the inner wall 303A of the main body portion 30A and the second flow path forming portion 312A corresponds to the detour portion 331A (see FIG. 14) of the third flow path 33A. Further, the gap located between the second flow path forming part 312A and the third flow path forming part 313A corresponds to a joining part 332A (see FIG. 14) of the third flow path 33A to the first flow path 31A. .
  • the first flow path 31A is located directly below the switching elements 3u to 3w, which are heating elements.
  • the heat generated in the switching elements 3u to 3w is transferred to the outside of the cooling device 100A by the refrigerant flowing through the first flow path 31A.
  • the switching elements 3u to 3w are cooled.
  • a plurality of fins 25 are located in the first flow path 31A, so that the switching elements 3u to 3w can be efficiently cooled.
  • the second flow path 32A is located further away from the switching element 3u than the first flow path 31A. Therefore, the refrigerant flowing through the second flow path 32A is less susceptible to temperature rise due to heat generated in the switching element 3u, compared to the refrigerant flowing through the first flow path 31A.
  • the refrigerant that has passed directly under the first region 21 in the first flow path 31A will then pass directly under the second region 22, but before passing directly under the second region 22, the refrigerant It merges with the refrigerant flowing from 32A, that is, the refrigerant whose temperature is lower than that of the refrigerant passing directly under the second region 22.
  • the cooling device 100A can cool the switching element 3v with a lower temperature refrigerant compared to the case where the second flow path 32A is not provided. In other words, it is possible to suppress the temperature rise of the refrigerant caused by the switching element 3u. Therefore, the cooling device 100A can suppress variations in cooling temperature between the switching element 3u and the switching element 3v arranged downstream thereof.
  • the third flow path 33A is located further away from the switching element 3v than the first flow path 31A. Therefore, the refrigerant flowing through the third flow path 33A is less susceptible to temperature rise due to heat generated by the switching element 3v, compared to the refrigerant flowing through the first flow path 31A.
  • the refrigerant that has passed through the second region 22 in the first flow path 31A will then pass through the third region 23, but before passing through the third region 23, the refrigerant that has flowed from the third flow path 33A,
  • the temperature decreases by merging with the refrigerant whose temperature increases less due to the switching elements 3u and 3v.
  • the cooling device 100 can cool the switching element 3w with the refrigerant at a lower temperature compared to the case where the third flow path 33A is not provided. In other words, it is possible to suppress the temperature rise of the refrigerant caused by the switching elements 3u and 3v. Therefore, the cooling device 100A can suppress variations in cooling temperature between the switching element 3v and the switching element 3w arranged downstream thereof.
  • the cooling temperature can be adjusted between the switching element 3u, the switching element 3v, and the switching element 3w. It is possible to suppress the occurrence of variations.
  • the cross-sectional area of the second flow path 32A at the branch portion (detour portion 321A described later) from the first flow path 31A is smaller than that of the first flow path 31A, and
  • the cross-sectional area of the third flow path 33A is larger than the flow path cross-sectional area at the branch portion (detour portion 331A described later) from the second flow path 32A.
  • the flow rate of the refrigerant in the third flow path 33A becomes faster than the flow speed of the refrigerant in the second flow path 32A, so that the cooling temperatures of the switching elements 3u, 3v, and 3w can be made more uniform. can.
  • the first flow path forming portion 311A and the second flow path forming portion 312A have, for example, a gate shape (see FIGS. 11 and 12). In this way, by forming the first flow path forming portion 311A and the second flow path forming portion 312A in a gate shape, for example, the first flow path forming portion 311A and the second flow path forming portion 312A are formed in a plate shape. Compared to the case, positioning of the second flow path 32A and the third flow path 33 becomes easier. Thereby, for example, it is possible to suppress variations in the heights of the second flow path 32A and the third flow path 33 from product to product. Furthermore, the ease of attaching the second flow path 32A and the third flow path 33 can be improved compared to, for example, the case where the first flow path forming portion 311A and the second flow path forming portion 312A are formed in a plate shape. .
  • FIG. 14 is a schematic enlarged view of a second flow path 32A and a third flow path 33A according to the second embodiment.
  • the second flow path 32A has a first guide portion 51A that guides the refrigerant flowing through the second flow path 32A to the first flow path 31A.
  • the second flow path 32A includes a detour portion 321A formed between the first flow path forming portion 311A and the inner wall 303A of the housing 10A, and a confluence portion 322A located downstream of the detour portion 321A. has.
  • the second flow path forming portion 312A is located closer to the casing 10A than the imaginary line L3, which is an imaginary extension of the first flow path forming portion 311A along the refrigerant flow direction (X-axis positive direction) in the detour portion 321A. It has a portion located on the inner wall 303A side. In this way, the second flow path 32A has a portion that collides with the flow of the refrigerant in the detour portion 321A as the first guide portion 51A.
  • the second flow path 32A can efficiently cause the refrigerant flowing through the second flow path 32A to flow into the first flow path 31A.
  • the second flow path 32A according to the second embodiment can efficiently lower the temperature of the refrigerant flowing through the first flow path 31A.
  • the third flow path 33A has a second guide portion 52A that guides the refrigerant flowing through the third flow path 33A to the first flow path 31A.
  • the third flow path 33A includes a detour portion 331A formed between the second flow path forming portion 312A and the inner wall 303A of the housing 10A, and a confluence portion 332A located downstream of the detour portion 331A. has.
  • the third flow path forming portion 313A is located closer to the housing 10A than the virtual line L4, which is a virtual line extending the second flow path forming portion 312A along the refrigerant flow direction (X-axis positive direction) in the detour portion 331A. It has a portion located on the inner wall 303A side. In this way, the third flow path 33A has a portion that collides with the flow of the refrigerant in the detour portion 331A as the second guide portion 52A.
  • the third flow path 33A can efficiently cause the refrigerant flowing through the third flow path 33A to flow into the first flow path 31A.
  • the third flow path 33A according to the second embodiment can efficiently lower the temperature of the refrigerant flowing through the first flow path 31A.
  • the inventor of this application measured the thermal resistance of the switching element 3 when the flow rate of the refrigerant was set to 6 L/min, 8 L/min, and 10 L/min, respectively.
  • the results are shown in FIG. FIG. 15 is a graph showing the relationship between the flow rate of the refrigerant and the thermal resistance of the switching element 3. As shown in FIG. 15, the results showed that the thermal resistance of the switching element 3 decreased as the flow rate of the refrigerant increased.
  • the flow rate of condition 1 indicates the flow rate of the refrigerant when cooling is performed using a cooling device that does not have the second flow path and the third flow path. Further, under condition 2, the flow rate of the first flow path was set to 6 L/min, and the flow rates of the second flow path and the third flow path were each set to 2 L/min.
  • FIG. 16 is a graph showing the results of calculating the temperatures of the switching elements 3u to 3w under conditions 1 and 2. As shown in FIG. 16, when calculation was performed under Condition 1, the temperature difference between the switching element 3u placed at the most upstream position and the switching element 3w placed at the most downstream position was 5.6°C. On the other hand, when calculation was performed under Condition 2, almost no temperature difference occurred between the switching elements 3u to 3w.
  • the cooling device having the second flow path and the third flow path in addition to the first flow path can suppress variations in cooling temperature between the switching elements 3u to 3w. .
  • the second flow path branches from the first flow path, but the second flow path does not necessarily have to branch from the first flow path. do not.
  • the third flow path does not necessarily need to be branched from the second flow path.
  • a configuration may be adopted in which a first flow path, a second flow path, and a third flow path are connected to each of a plurality of inflow ports provided in the housing.
  • the merging portion 322A of the second flow path 32A and the merging portion 332A of the third flow path 33A extend vertically upward toward the first flow path 31A, but the merging portion 322A, 332A may extend diagonally toward the first flow path 31A similarly to the first embodiment. Thereby, the temperature of the refrigerant flowing through the first flow path 31A can be efficiently lowered.
  • the power conversion device 1 according to each of the embodiments described above may be applied to, for example, a motor system mounted on a vehicle such as a hybrid vehicle or an electric vehicle.
  • the cooling device is a cooling device that cools a heating element, and includes a housing (as an example, the housing 10, 10A), It includes one flow path (for example, first flow paths 31 and 31A) and a second flow path (for example, second flow paths 32 and 32A).
  • the housing has a refrigerant inlet (for example, inlet 301, 301A) and an outlet (for example, outlet 302, 302A), and is in contact with the first heating element (for example, switching element 3u). It includes a first region (for example, the first region 21) and a second region (for example, the second region 22) in contact with the second heating element (for example, the switching element 3v).
  • the first channel is a channel that connects the inlet and the outlet, and overlaps with the first region and the second region when the casing is viewed from above.
  • the second flow path merges with the first flow path at a position downstream of the first region and upstream of the second region. Further, the second flow path includes a guide portion (for example, the first guide portions 51 and 51A) that guides the refrigerant flowing through the second flow path to the first flow path.
  • the cooling device it is possible to suppress variations in cooling temperature among a plurality of objects to be cooled.
  • a cooling device that cools a heating element, a casing that has a refrigerant inlet and an outlet and includes a first region in contact with the first heating element and a second region in contact with the second heating element; a first flow path that connects the inflow port and the outflow port and overlaps the first region and the second region when the casing is viewed from above; a second flow path that merges with the first flow path at a position downstream of the first region and upstream of the second region;
  • the second flow path is a cooling device including a guide portion that guides the refrigerant flowing through the second flow path to the first flow path.
  • the casing is a first flow path forming part that separates the first flow path and the second flow path; a second flow path forming section that is disposed downstream of the first flow path forming section and forms a confluence section with the first flow path in the second flow path; Equipped with The second flow path is a detour portion formed between the first flow path forming portion and an inner wall of the casing; and the confluence part located downstream of the detour part,
  • the second flow path forming section includes a portion located closer to the inner wall of the casing than a virtual line extending the first flow path forming section along the flow direction of the refrigerant in the detour section.
  • the cooling device according to any one of (1) to (4), which has the cooling device as a guide portion.
  • the first flow path forming section has a first wall surface forming the confluence section with the second flow path forming section;
  • the second flow path forming section has a second wall surface forming the confluence section with the first wall surface
  • the casing further includes a third region in contact with a third heating element, The first flow path overlaps with the first region, the second region, and the third region of the casing when the casing is viewed from above, The third flow path branches from the second flow path at a position upstream of the second region, and connects with the first flow path at a position downstream of the second region and upstream of the third region.
  • the cooling device according to any one of (2) to (6), which joins together.
  • a cross-sectional area of the second flow path at a branching portion from the first flow path is smaller than a cross-sectional area of the first flow path, and
  • a casing having a refrigerant inlet and an outlet; a first flow path that connects the inflow port and the outflow port and overlaps a first region and a second region of the casing when the casing is viewed from above; a first semiconductor element disposed in the first region; a second semiconductor element disposed in the second region; a second flow path that merges with the first flow path at a position downstream of the first region and upstream of the second region;
  • the second flow path includes a guide portion that guides the refrigerant flowing through the second flow path to the first flow path.
  • (10) further comprising a third flow path branching from the second flow path and merging with the first flow path;
  • the first flow path overlaps with the first region, the second region, and the third region of the casing when the casing is viewed from above, further comprising a third semiconductor element disposed in the third region,
  • the third flow path branches from the second flow path at a position upstream of the second region, and connects with the first flow path at a position downstream of the second region and upstream of the third region.
  • the casing includes: a main body portion having a groove forming an inner wall surface of at least a portion of the first flow path, the second flow path, and the third flow path; a plate-shaped base plate having a first surface and a second surface located opposite to the first surface, and closing the opening of the groove on the second surface;
  • the first semiconductor element, the second semiconductor element, and the third semiconductor element are arranged on the first surface of the base plate, and a plurality of fins are provided on the second surface of the base plate.
  • the semiconductor device described. The semiconductor device according to (10) or (11), wherein the first semiconductor element, the second semiconductor element, and the third semiconductor element are insulated gate bipolar transistors or power MOSFETs.

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

A cooling device, according to one embodiment of the present disclosure, is for cooling heating elements, and comprises: a housing; a first flow path; and a second flow path. The housing has an inflow port and an outflow port for a refrigerant, and includes a first region which is in contact with a first heating element, and a second region which is in contact with a second heating element. The first flow path connects the inflow port and the outflow port, and overlaps with the first region and the second region in a planar view of the housing. The second flow path joins the first flow path at a position downstream of the first region and upstream of the second region. In addition, the second flow path has a guide portion for guiding the refrigerant, which flows through the second flow path, to the first flow path.

Description

冷却装置および半導体装置Cooling equipment and semiconductor equipment
　本開示は、冷却装置および半導体装置に関する。 The present disclosure relates to a cooling device and a semiconductor device.
　従来、ＩＧＢＴ（Insulated　Gate　Bipolar　Transistor）等の半導体素子を備えた半導体装置が知られている。 Conventionally, semiconductor devices including semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors) have been known.
　ＩＧＢＴ等の半導体素子は、動作時の発熱量が大きい。そこで、冷媒式の冷却装置を用いて半導体素子を冷却する技術が提案されている（例えば、特許文献１参照）。冷媒式の冷却装置は、内部に流路を有しており、かかる流路を流れる冷媒（たとえば、冷却水）が半導体素子で発生した熱を外部に移動させることにより半導体素子を冷却する。 Semiconductor elements such as IGBTs generate a large amount of heat during operation. Therefore, a technique has been proposed in which a semiconductor element is cooled using a refrigerant type cooling device (see, for example, Patent Document 1). A refrigerant-type cooling device has an internal flow path, and a refrigerant (for example, cooling water) flowing through the flow path cools the semiconductor element by transferring heat generated in the semiconductor element to the outside.
日本国公開公報：特開２０２１－５２０６０号公報Japanese Publication: Japanese Patent Application Publication No. 2021-52060
　しかしながら、上述した冷媒式の冷却装置を用いて複数の半導体素子を冷却する場合、上流側に設置された半導体素子と下流側に設置された半導体素子との間で、冷却温度にバラツキが生じるおそれがある。 However, when cooling multiple semiconductor devices using the above-mentioned refrigerant type cooling device, there is a risk that variations in cooling temperature may occur between the semiconductor devices installed on the upstream side and the semiconductor devices installed on the downstream side. There is.
　本開示は、複数の冷却対象物間における冷却温度のバラツキを抑制することができる技術を提供する。 The present disclosure provides a technique that can suppress variations in cooling temperature among a plurality of objects to be cooled.
　本開示の一態様による冷却装置は、発熱体を冷却する冷却装置であって、筐体と、第１流路と、第２流路とを備える。筐体は、冷媒の流入口および流出口を有し、第１の発熱体に接する第１領域と第２の発熱体に接する第２領域とを含む。第１流路は、流入口と流出口とを繋ぐ流路であって、筐体を平面視した場合に、第１領域および第２領域と重複する。第２流路は、第１領域よりも下流かつ第２領域よりも上流の位置で第１流路と合流する。また、第２流路は、第２流路を流れる冷媒を第１流路へ案内する案内部を有する。 A cooling device according to one aspect of the present disclosure is a cooling device that cools a heat generating element, and includes a housing, a first flow path, and a second flow path. The housing has a refrigerant inlet and an outlet, and includes a first region in contact with the first heating element and a second region in contact with the second heating element. The first channel is a channel that connects the inlet and the outlet, and overlaps with the first region and the second region when the casing is viewed from above. The second flow path merges with the first flow path at a position downstream of the first region and upstream of the second region. Moreover, the second flow path has a guide portion that guides the refrigerant flowing through the second flow path to the first flow path.
　本開示によれば、複数の冷却対象物間における冷却温度のバラツキを抑制することができる。 According to the present disclosure, it is possible to suppress variations in cooling temperature among a plurality of objects to be cooled.
図１は、第１実施形態に係る電力変換装置の回路構成の一例を示す図である。FIG. 1 is a diagram illustrating an example of a circuit configuration of a power conversion device according to a first embodiment. 図２は、第１実施形態に係る冷却装置の模式的な側面図である。FIG. 2 is a schematic side view of the cooling device according to the first embodiment. 図３は、第１実施形態に係るベースプレートの模式的な平面図である。FIG. 3 is a schematic plan view of the base plate according to the first embodiment. 図４は、図２に示すＩＶ－ＩＶ線矢視における模式的な断面図である。4 is a schematic cross-sectional view taken along the line IV-IV shown in FIG. 2. FIG. 図５は、図４に示すＶ－Ｖ線矢視における模式的な断面図である。FIG. 5 is a schematic cross-sectional view taken along the line VV shown in FIG. 図６は、図４に示すＶＩ－ＶＩ線矢視における模式的な断面図である。FIG. 6 is a schematic cross-sectional view taken along the line VI-VI shown in FIG. 図７は、図４に示すＶＩＩ－ＶＩＩ線矢視における模式的な断面図である。7 is a schematic cross-sectional view taken along the line VII-VII shown in FIG. 4. FIG. 図８は、第１実施形態に係る第２流路および第３流路の模式的な拡大図である。FIG. 8 is a schematic enlarged view of the second flow path and the third flow path according to the first embodiment. 図９は、第２実施形態に係る冷却装置の内部構造を示す模式的な平断面図である。FIG. 9 is a schematic cross-sectional plan view showing the internal structure of the cooling device according to the second embodiment. 図１０は、図９に示すＸ－Ｘ線矢視における模式的な断面図である。FIG. 10 is a schematic cross-sectional view taken along the line XX shown in FIG. 図１１は、図９に示すＸＩ－ＸＩ線矢視における模式的な断面図である。FIG. 11 is a schematic cross-sectional view taken along the line XI-XI shown in FIG. 図１２は、図９に示すＸＩＩ－ＸＩＩ線矢視における模式的な断面図である。FIG. 12 is a schematic cross-sectional view taken along the line XII-XII shown in FIG. 図１３は、図９に示すＸＩＩＩ－ＸＩＩＩ線矢視における模式的な断面図である。FIG. 13 is a schematic cross-sectional view taken along the line XIII-XIII shown in FIG. 図１４は、第２実施形態に係る第２流路および第３流路の模式的な拡大図である。FIG. 14 is a schematic enlarged view of the second flow path and the third flow path according to the second embodiment. 図１５は、冷媒の流量とスイッチング素子の熱抵抗との関係を示すグラフである。FIG. 15 is a graph showing the relationship between the flow rate of the refrigerant and the thermal resistance of the switching element. 図１６は、条件および条件にてスイッチング素子の温度を算出した結果を示すグラフである。FIG. 16 is a graph showing the conditions and the results of calculating the temperature of the switching element under the conditions.
　以下に、本開示による冷却装置および半導体装置を実施するための形態（以下、「実施形態」と記載する）について図面を参照しつつ詳細に説明する。以下に示す実施形態では、本開示による冷却装置を備えた半導体装置を電力変換装置に適用した場合の例について説明するが、この実施形態により本開示が限定されるものではない。また、各実施形態は、処理内容を矛盾させない範囲で適宜組み合わせることが可能である。また、以下の各実施形態において同一の部位には同一の符号を付し、重複する説明は省略される。 Hereinafter, embodiments for implementing a cooling device and a semiconductor device according to the present disclosure (hereinafter referred to as "embodiments") will be described in detail with reference to the drawings. In the embodiment shown below, an example will be described in which a semiconductor device including a cooling device according to the present disclosure is applied to a power conversion device, but the present disclosure is not limited to this embodiment. Moreover, each embodiment can be combined as appropriate within the range that does not conflict with the processing contents. Further, in each of the embodiments below, the same parts are given the same reference numerals, and redundant explanations will be omitted.
　また、以下に示す実施形態では、「一定」、「直交」、「垂直」あるいは「平行」といった表現が用いられる場合があるが、これらの表現は、厳密に「一定」、「直交」、「垂直」あるいは「平行」であることを要しない。すなわち、上記した各表現は、たとえば製造精度、設置精度などのずれを許容するものとする。 In addition, in the embodiments described below, expressions such as "constant", "orthogonal", "perpendicular", or "parallel" may be used, but these expressions strictly do not mean "constant", "orthogonal", "parallel", etc. They do not need to be "perpendicular" or "parallel". That is, each of the above expressions allows deviations in manufacturing accuracy, installation accuracy, etc., for example.
　従来、絶縁ゲート型バイポーラトランジスタ（ＩＧＢＴ：Insulated　Gate　Bipolar　Transistor）等の半導体素子を備える半導体装置が知られている。半導体素子は、動作時の発熱量が比較的に大きい。このため、半導体素子を冷却するための冷却装置を備えた半導体装置が提案されている。 Conventionally, semiconductor devices including semiconductor elements such as insulated gate bipolar transistors (IGBTs) have been known. Semiconductor elements generate a relatively large amount of heat during operation. For this reason, semiconductor devices equipped with cooling devices for cooling semiconductor elements have been proposed.
　ここで、たとえば半導体装置の一種である電力変換装置では、冷媒式の冷却装置上に、Ｕ相、Ｖ相およびＷ相を構成する複数のスイッチング素子（半導体素子の一例）が搭載される場合がある。しかしながら、かかる構成とした場合、冷媒の流れ方向の上流側に位置するスイッチング素子と下流側に位置するスイッチング素子との間で冷却温度にバラツキが生じるおそれがある。これは、上流側のスイッチング素子によって温められた冷媒が下流側のスイッチング素子の冷却に用いられることになるためである。このように、複数のスイッチング素子間で冷却温度にバラツキが生じると、たとえば冷却が不十分な下流側のスイッチング素子が上流側のスイッチング素子よりも故障しやすくなる等のおそれがある。また、冷媒の温度上昇を考慮して、冷却装置に供給する冷媒の温度を予め低く設定しておくことも考えられるが、ランニングコストの増大につながるおそれがある。 Here, for example, in a power conversion device which is a type of semiconductor device, a plurality of switching elements (an example of a semiconductor element) constituting a U phase, a V phase, and a W phase may be mounted on a refrigerant-type cooling device. be. However, with such a configuration, there is a risk that variations in cooling temperature will occur between the switching element located on the upstream side and the switching element located on the downstream side in the flow direction of the refrigerant. This is because the refrigerant warmed by the upstream switching element is used to cool the downstream switching element. In this way, if there are variations in the cooling temperature among a plurality of switching elements, there is a possibility that, for example, a switching element on the downstream side that is insufficiently cooled may be more likely to fail than a switching element on the upstream side. Furthermore, considering the rise in the temperature of the refrigerant, it may be possible to set the temperature of the refrigerant supplied to the cooling device low in advance, but this may lead to an increase in running costs.
　そこで、複数の冷却対象物間における冷却温度のバラツキを抑制することができる技術が望まれている。 Therefore, there is a need for a technology that can suppress variations in cooling temperature among a plurality of objects to be cooled.
＜１．電力変換装置１＞
　図１は、第１実施形態に係る電力変換装置１の回路構成の一例を示す図である。図１に示す電力変換装置１は、直流電力を交流電力に変換し、変換した交流電力をモータ２に出力する。たとえば、電力変換装置１は、不図示の交流電源から供給される交流電力を直流電力へ変換する不図示のコンバータ回路に接続され、コンバータ回路から出力される直流電力を交流電力に変換し、変換した交流電力をモータ２に出力する。また、電力変換装置１は、コンバータ回路を介さず、不図示の直流電源に直接接続されてもよい。 <1. Power converter 1>
FIG. 1 is a diagram showing an example of a circuit configuration of a power conversion device 1 according to a first embodiment. A power conversion device 1 shown in FIG. 1 converts DC power into AC power and outputs the converted AC power to a motor 2. For example, the power conversion device 1 is connected to a converter circuit (not shown) that converts AC power supplied from an AC power source (not shown) into DC power, and converts the DC power output from the converter circuit into AC power. The generated AC power is output to the motor 2. Moreover, the power conversion device 1 may be directly connected to a DC power source (not shown) without using a converter circuit.
　図１に示すように、電力変換装置１は、２つのスイッチング素子３ｕと、２つのスイッチング素子３ｖと、２つのスイッチング素子３ｗとを備える。また、電力変換装置１は、２つのダイオード４ｕと、２つのダイオード４ｖと、２つのダイオード４ｗと、ゲートドライバ５とを備える。なお、電力変換装置１は、コイルおよびコンデンサによって構成される不図示のフィルタがＵ相、Ｖ相、およびＷ相に設けられていてもよい。また、電力変換装置１は、上記フィルタを有しない構成であってもよい。 As shown in FIG. 1, the power conversion device 1 includes two switching elements 3u, two switching elements 3v, and two switching elements 3w. Further, the power conversion device 1 includes two diodes 4u, two diodes 4v, two diodes 4w, and a gate driver 5. Note that the power conversion device 1 may be provided with filters (not shown) configured by coils and capacitors in the U phase, V phase, and W phase. Moreover, the power conversion device 1 may have a configuration that does not include the above-mentioned filter.
　２つのスイッチング素子３ｕは、Ｕ相のハーフブリッジ回路を構成し、２つのスイッチング素子３ｖは、Ｖ相のハーフブリッジ回路を構成し、２つのスイッチング素子３ｗは、Ｗ相のハーフブリッジ回路を構成する。２つスイッチング素子３ｕは、直列に接続される。同様に、２つのスイッチング素子３ｖは直列に接続され、２つのスイッチング素子３ｗも直接に接続される。 The two switching elements 3u constitute a U-phase half-bridge circuit, the two switching elements 3v constitute a V-phase half-bridge circuit, and the two switching elements 3w constitute a W-phase half-bridge circuit. . The two switching elements 3u are connected in series. Similarly, the two switching elements 3v are connected in series, and the two switching elements 3w are also directly connected.
　スイッチング素子３ｕ，３ｖ，３ｗは、例えば、絶縁ゲート型バイポーラトランジスタ（ＩＧＢＴ：Insulated　Gate　Bipolar　Transistor）またはパワーＭＯＳＦＥＴ（Metal　Oxide　Semiconductor　Field　Effect　Transistor）である。スイッチング素子３ｕ，３ｖ，３ｗは、例えば、シリコン系材料により形成されるスイッチング素子またはワイドバンドギャップ（Wide　Bandgap）半導体により形成されるスイッチング素子などである。ワイドバンドギャップ半導体は、例えば、炭化珪素（ＳｉＣ）、窒化ガリウム（ＧａＮ）、酸化ガリウム（Ｇａ２Ｏ３）、またはダイヤモンドなどである。 The switching elements 3u, 3v, and 3w are, for example, insulated gate bipolar transistors (IGBTs) or power MOSFETs (metal oxide semiconductor field effect transistors). The switching elements 3u, 3v, and 3w are, for example, switching elements made of a silicon-based material or switching elements made of a wide bandgap semiconductor. The wide bandgap semiconductor is, for example, silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ), or diamond.
　２つのダイオード４ｕは、対応するスイッチング素子３ｕに対して逆並列接続される。同様に、２つのダイオード４ｖは、対応するスイッチング素子３ｖに対して逆並列接続され、２つのダイオード４ｗは、対応するスイッチング素子３ｗに対して逆並列接続される。ダイオード４ｕ，４ｖ，４ｗは、スイッチング素子３ｕ，３ｖ，３ｗを保護するための還流ダイオードである。 The two diodes 4u are connected in antiparallel to the corresponding switching elements 3u. Similarly, the two diodes 4v are connected in antiparallel to the corresponding switching element 3v, and the two diodes 4w are connected in antiparallel to the corresponding switching element 3w. The diodes 4u, 4v, and 4w are free-wheeling diodes for protecting the switching elements 3u, 3v, and 3w.
　以下において、スイッチング素子３ｕ，３ｖ，３ｗを個別に区別せずに示す場合、スイッチング素子３と記載する場合がある。また、ダイオード４ｕ，４ｖ，４ｗを個別に区別せずに示す場合、ダイオード４と記載する場合がある。 In the following, when the switching elements 3u, 3v, and 3w are shown without being individually distinguished, they may be referred to as switching elements 3. Furthermore, when the diodes 4u, 4v, and 4w are shown without being individually distinguished, they may be referred to as a diode 4.
　ゲートドライバ５は、不図示の制御部から出力されるゲート信号を増幅する。そして、ゲートドライバ５は、増幅したゲート信号を複数のスイッチング素子３に出力する。 The gate driver 5 amplifies a gate signal output from a control section (not shown). Then, the gate driver 5 outputs the amplified gate signal to the plurality of switching elements 3.
＜２．冷却装置１００＞
　次に、電力変換装置１が備える冷却装置１００の構成の一例について説明する。図２は、第１実施形態に係る冷却装置１００の模式的な側面図である。 <2. Cooling device 100>
Next, an example of the configuration of the cooling device 100 included in the power conversion device 1 will be described. FIG. 2 is a schematic side view of the cooling device 100 according to the first embodiment.
　以下参照する各図面では、説明を分かりやすくするために、互いに直交するＸ軸方向、Ｙ軸方向およびＺ軸方向を規定し、Ｚ軸正方向を鉛直上向き方向とする直交座標系を示す場合がある。 In order to make the explanation easier to understand, each drawing referred to below may show an orthogonal coordinate system in which the X-axis direction, Y-axis direction, and Z-axis direction are defined to be orthogonal to each other, and the positive Z-axis direction is the vertically upward direction. be.
　また、以下参照する図面では、説明を分かりやすくするために、ベースプレート２０上に複数のスイッチング素子３のみが配置された図を示している。なお、実際には、ベースプレート２０上には、複数のスイッチング素子３以外に、たとえば複数のダイオード４が配置される。スイッチング素子３およびダイオード４は、絶縁基板を介してベースプレート２０に搭載されてもよい。また、ベースプレート２０上には、スイッチング素子３およびダイオード４を封止するモールド樹脂等が配置されてもよい。 Further, in the drawings referred to below, only a plurality of switching elements 3 are arranged on the base plate 20 in order to make the explanation easier to understand. Note that, in reality, in addition to the plurality of switching elements 3, for example, a plurality of diodes 4 are arranged on the base plate 20. Switching element 3 and diode 4 may be mounted on base plate 20 via an insulating substrate. Further, a mold resin or the like for sealing the switching element 3 and the diode 4 may be placed on the base plate 20.
　冷却装置１００は、発熱体であるスイッチング素子３を冷却する冷媒式の冷却装置である。スイッチング素子３ｕは、第１半導体素子の一例でもある。また、スイッチング素子３ｕは、第１の発熱体の一例でもある。スイッチング素子３ｖは、第２半導体素子の一例であり、第２の発熱体の一例でもある。スイッチング素子３ｗは、第３半導体素子の一例であり、第３の発熱体の一例でもある。 The cooling device 100 is a refrigerant-type cooling device that cools the switching element 3, which is a heating element. The switching element 3u is also an example of a first semiconductor element. Further, the switching element 3u is also an example of a first heating element. The switching element 3v is an example of a second semiconductor element and also an example of a second heating element. The switching element 3w is an example of a third semiconductor element and also an example of a third heating element.
　冷媒は、たとえば冷却水等の液体である。なお、これに限らず、冷媒は気体であってもよい。 The refrigerant is, for example, a liquid such as cooling water. Note that the refrigerant is not limited to this, and may be a gas.
　図２に示すように、第１実施形態に係る冷却装置１００は、筐体１０を備える。筐体１０は、ベースプレート２０と、本体部３０とを備える。ベースプレート２０および本体部３０は、たとえば、アルミニウムまたはアルミニウム合金等の金属材料で構成される。 As shown in FIG. 2, the cooling device 100 according to the first embodiment includes a housing 10. The housing 10 includes a base plate 20 and a main body portion 30. The base plate 20 and the main body portion 30 are made of a metal material such as aluminum or an aluminum alloy.
　ベースプレート２０は、略板状の部材である。図３は、第１実施形態に係るベースプレート２０の模式的な平面図である。図３に示すように、ベースプレート２０は、第１面２０１を有する。第１面２０１は、平坦面である。第１面２０１には、複数のスイッチング素子３ｕ，３ｖ，３ｗが配置される。 The base plate 20 is a substantially plate-shaped member. FIG. 3 is a schematic plan view of the base plate 20 according to the first embodiment. As shown in FIG. 3, base plate 20 has a first surface 201. As shown in FIG. The first surface 201 is a flat surface. A plurality of switching elements 3u, 3v, and 3w are arranged on the first surface 201.
　スイッチング素子３ｕ，３ｖ，３ｗは、冷媒の流れ方向（ここでは、Ｘ軸正方向）に沿ってこの順番で並べられる。２つのスイッチング素子３ｕは、冷媒の流れ方向と直交する方向（ここでは、Ｙ軸方向）に並べられる。２つのスイッチング素子３ｖは、冷媒の流れ方向と直交する方向に並べられ、２つのスイッチング素子３ｗは、冷媒の流れ方向と直交する方向に並べられる。 The switching elements 3u, 3v, and 3w are arranged in this order along the refrigerant flow direction (here, the X-axis positive direction). The two switching elements 3u are arranged in a direction (here, the Y-axis direction) orthogonal to the flow direction of the refrigerant. The two switching elements 3v are arranged in a direction perpendicular to the flow direction of the refrigerant, and the two switching elements 3w are arranged in a direction perpendicular to the flow direction of the refrigerant.
　ベースプレート２０は、第１面２０１に、第１領域２１、第２領域２２および第３領域２３を含む。第１領域２１、第２領域２２および第３領域２３は、互いに間隔をあけて配置される。 The base plate 20 includes a first region 21, a second region 22, and a third region 23 on the first surface 201. The first region 21, the second region 22, and the third region 23 are arranged at intervals from each other.
　第１領域２１は、スイッチング素子３ｕに接する領域である。同様に、第２領域２２は、スイッチング素子３ｖに接する領域であり、第３領域２３は、スイッチング素子３ｗに接する領域である。 The first region 21 is a region in contact with the switching element 3u. Similarly, the second region 22 is a region in contact with the switching element 3v, and the third region 23 is a region in contact with the switching element 3w.
　一例として、第１領域２１は、平面視において２つのスイッチング素子３ｕの外縁に接する矩形状の領域であってもよい。同様に、第２領域２２は、平面視においてスイッチング素子３ｖの外縁に接する矩形状の領域であってもよく、第３領域２３は、平面視においてスイッチング素子３ｗの外縁に接する矩形状の領域であってもよい。 As an example, the first region 21 may be a rectangular region that touches the outer edges of the two switching elements 3u in plan view. Similarly, the second region 22 may be a rectangular region in contact with the outer edge of the switching element 3v in plan view, and the third region 23 may be a rectangular region in contact with the outer edge of the switching element 3w in plan view. There may be.
　なお、第１領域２１、第２領域２２および第３領域２３の大きさは図示の例に限定されない。たとえば、第１領域２１、第２領域２２および第３領域２３は、互いに重ならない範囲において図３に示す例より大きくてもよい。 Note that the sizes of the first region 21, second region 22, and third region 23 are not limited to the illustrated example. For example, the first region 21, the second region 22, and the third region 23 may be larger than the example shown in FIG. 3 insofar as they do not overlap with each other.
　ベースプレート２０の第１面２０１の反対に位置する第２面２０２には、複数のフィン２５が設けられる（図５等参照）。複数のフィン２５は、たとえば棒状である。なお、複数のフィン２５は、板状であってもよい。 A plurality of fins 25 are provided on a second surface 202 located opposite to the first surface 201 of the base plate 20 (see FIG. 5, etc.). The plurality of fins 25 are, for example, rod-shaped. Note that the plurality of fins 25 may be plate-shaped.
　本体部３０は、上方が開放された略容器状の部材である。本体部３０は、ベースプレート２０とレーザ溶接等によって接合される。ベースプレート２０と本体部３０とが接合されることにより、筐体１０の内部には、後述する第１流路３１、第２流路３２および第３流路３３が形成される。 The main body portion 30 is a substantially container-shaped member with an open top. The main body portion 30 is joined to the base plate 20 by laser welding or the like. By joining the base plate 20 and the main body part 30, a first flow path 31, a second flow path 32, and a third flow path 33, which will be described later, are formed inside the housing 10.
　具体的には、本体部３０は、第１流路３１、第２流路３２および第３流路３３の少なくとも一部の内壁面を構成する溝を有しており、上記溝の開放部をベースプレート２０の第２面２０２が塞ぐことで、第１流路３１、第２流路３２および第３流路３３が形成される。 Specifically, the main body portion 30 has grooves forming at least part of the inner wall surfaces of the first flow path 31, the second flow path 32, and the third flow path 33, and the open portion of the groove is By closing the second surface 202 of the base plate 20, a first flow path 31, a second flow path 32, and a third flow path 33 are formed.
　なお、ベースプレート２０と本体部３０との接合方法としては、レーザ溶接の他、たとえば、超音波接合、摩擦撹拌接合などの手法を用いることができる。また、ベースプレート２０と本体部３０とは、ねじ止めされてもよい。たとえば、ベースプレート２０および本体部３０の周囲に複数のねじ穴を設け、これらのねじ穴にねじを挿通させてベースプレート２０と本体部３０とを締め付けることによってベースプレート２０と本体部３０とを接合してもよい。また、この際、筐体１０内部の密閉性を高めるために、ベースプレート２０と本体部３０との間にリング状のシール部材（たとえば、Ｏリング等）を介在させてもよい。 Note that as a method for joining the base plate 20 and the main body portion 30, in addition to laser welding, methods such as ultrasonic welding, friction stir welding, etc. can be used. Further, the base plate 20 and the main body portion 30 may be screwed together. For example, the base plate 20 and the main body part 30 are joined by providing a plurality of screw holes around the base plate 20 and the main body part 30, and tightening the base plate 20 and the main body part 30 by inserting screws into these screw holes. Good too. Further, at this time, a ring-shaped sealing member (for example, an O-ring, etc.) may be interposed between the base plate 20 and the main body portion 30 in order to improve the sealing performance inside the housing 10.
　図４は、図２に示すＩＶ－ＩＶ線矢視における模式的な断面図である。なお、図４では、複数のフィン２５を省略して示している。 FIG. 4 is a schematic cross-sectional view taken along the line IV-IV shown in FIG. 2. Note that in FIG. 4, the plurality of fins 25 are omitted.
　図４に示すように、冷却装置１００は、筐体１０の内部に、第１流路３１と、２つの第２流路３２と、２つの第３流路３３とを備える。 As shown in FIG. 4, the cooling device 100 includes a first flow path 31, two second flow paths 32, and two third flow paths 33 inside the housing 10.
　第１流路３１は、筐体１０に設けられた流入口３０１および流出口３０２を繋ぐ流路である。流入口３０１は、筐体１０におけるＸ軸負方向側の側面に開口し、流出口３０２は、筐体１０におけるＸ軸正方向側の側面に開口する。第１流路３１は、Ｘ軸方向に沿って直線的に延びており、流入口３０１から流入した冷媒をＸ軸正方向に沿って流通させて流出口３０２まで導く。 The first flow path 31 is a flow path that connects an inlet 301 and an outlet 302 provided in the housing 10. The inflow port 301 opens on the side surface of the housing 10 on the negative side of the X-axis, and the outflow port 302 opens on the side surface of the housing 10 on the positive side of the X-axis. The first flow path 31 extends linearly along the X-axis direction, and causes the refrigerant that has flowed in from the inlet 301 to flow along the positive direction of the X-axis and leads to the outlet 302 .
　第１流路３１は、平面視において第１領域２１、第２領域２２および第３領域２３と重複する。すなわち、第１流路３１は、第１領域２１、第２領域２２および第３領域２３の直下に位置する。 The first flow path 31 overlaps with the first region 21, second region 22, and third region 23 in plan view. That is, the first flow path 31 is located directly below the first region 21 , the second region 22 , and the third region 23 .
　２つの第２流路３２は、流入口３０１よりも下流かつ第１領域２１よりも上流の位置で第１流路３１から分岐する。具体的には、２つの第２流路３２は、第１流路３１における冷媒の流れ方向（Ｘ軸方向）と直交する方向（Ｙ軸方向）に第１領域２１を迂回するように第１流路３１から分岐する。２つの第２流路３２のうち一方は、Ｙ軸正方向に第１領域２１を迂回するように第１流路３１から分岐し、他方は、Ｙ軸負方向に第１領域２１を迂回するように第１流路３１から分岐する。そして、２つの第２流路３２は、第１領域２１よりも下流かつ第２領域２２よりも上流の位置で第１流路３１と合流する。 The two second flow paths 32 branch from the first flow path 31 at a position downstream of the inlet 301 and upstream of the first region 21. Specifically, the two second flow paths 32 are arranged so as to bypass the first region 21 in a direction (Y-axis direction) perpendicular to the flow direction (X-axis direction) of the refrigerant in the first flow path 31. It branches off from the flow path 31. One of the two second flow paths 32 branches from the first flow path 31 so as to bypass the first region 21 in the Y-axis positive direction, and the other one detours around the first region 21 in the Y-axis negative direction. It branches off from the first flow path 31 as shown in FIG. The two second flow paths 32 merge with the first flow path 31 at a position downstream of the first region 21 and upstream of the second region 22.
　このように、２つの第２流路３２は、平面視において第１領域２１、第２領域２２および第３領域２３と重複しない位置に配置される。 In this way, the two second flow paths 32 are arranged at positions that do not overlap with the first region 21, second region 22, and third region 23 in plan view.
　本体部３０は、第１流路形成部３１１と、第２流路形成部３１２とを備える。第１流路形成部３１１は、第１流路３１と第２流路３２とを隔てる隔壁である。第１流路形成部３１１は、本体部３０の内壁３０３との間に隙間を有している。この隙間は、第１領域２１を迂回する第２流路３２の迂回部３２１（図８参照）に相当する。第１領域２１は、２つの第１流路形成部３１１の間に配置される。第２流路形成部３１２は、第１流路形成部３１１よりも下流に配置された隔壁である。第２流路形成部３１２は、第１流路形成部３１１との間に隙間を有している。この隙間は、第２流路３２における第１流路３１への合流部３２２（図８参照）に相当する。 The main body section 30 includes a first flow path forming section 311 and a second flow path forming section 312. The first flow path forming part 311 is a partition wall that separates the first flow path 31 and the second flow path 32. The first flow path forming section 311 has a gap between it and the inner wall 303 of the main body section 30 . This gap corresponds to a detour portion 321 (see FIG. 8) of the second flow path 32 that detours around the first region 21. The first region 21 is arranged between the two first flow path forming parts 311. The second flow path forming portion 312 is a partition wall disposed downstream of the first flow path forming portion 311. The second flow path forming section 312 has a gap between it and the first flow path forming section 311 . This gap corresponds to a merging portion 322 (see FIG. 8) in the second flow path 32 to the first flow path 31.
　２つの第３流路３３は、第２流路３２から分岐して第１流路３１と合流する。具体的には、第３流路３３は、第２領域２２よりも上流の位置で第２流路３２から分岐し、第２領域２２を迂回するように延在して、第２領域２２よりも下流かつ第３領域２３よりも上流の位置で第１流路３１と合流する。このように、２つの第３流路３３は、平面視において第１領域２１、第２領域２２および第３領域２３と重複しない位置に配置される。 The two third flow paths 33 branch from the second flow path 32 and merge with the first flow path 31 . Specifically, the third flow path 33 branches from the second flow path 32 at a position upstream of the second region 22, extends so as to bypass the second region 22, and extends from the second region 22. It also merges with the first flow path 31 at a position downstream and upstream of the third region 23 . In this way, the two third channels 33 are arranged at positions that do not overlap with the first region 21, second region 22, and third region 23 in plan view.
　上述した第２流路形成部３１２は、本体部３０の内壁３０３との間に隙間を有している。この隙間は、第２領域２２を迂回する第３流路３３の迂回部３３１（図８参照）に相当する。第２領域２２は、２つの第２流路形成部３１２の間に配置される。また、本体部３０は、第３流路形成部３１３を備える。第３流路形成部３１３は、第２流路形成部３１２よりも下流に設けられた隔壁であって、第２流路形成部３１２との間に隙間を有している。この隙間は、第３流路３３における第１流路３１への合流部３３２（図８参照）に相当する。 The second flow path forming section 312 described above has a gap between it and the inner wall 303 of the main body section 30. This gap corresponds to a detour portion 331 (see FIG. 8) of the third flow path 33 that detours around the second region 22. The second region 22 is arranged between the two second flow path forming parts 312. Further, the main body portion 30 includes a third flow path forming portion 313. The third flow path forming section 313 is a partition wall provided downstream of the second flow path forming section 312, and has a gap between it and the second flow path forming section 312. This gap corresponds to a merging portion 332 (see FIG. 8) in the third flow path 33 to the first flow path 31.
　図５は、図４に示すＶ－Ｖ線矢視における模式的な断面図である。図６は、図４に示すＶＩ－ＶＩ線矢視における模式的な断面図である。図７は、図４に示すＶＩＩ－ＶＩＩ線矢視における模式的な断面図である。 FIG. 5 is a schematic cross-sectional view taken along the line VV shown in FIG. 4. FIG. 6 is a schematic cross-sectional view taken along the line VI-VI shown in FIG. 7 is a schematic cross-sectional view taken along the line VII-VII shown in FIG. 4. FIG.
　図５～図７に示すように、発熱体であるスイッチング素子３ｕ～３ｗの直下には第１流路３１が位置している。スイッチング素子３ｕ～３ｗで発生した熱は、第１流路３１を流れる冷媒によって冷却装置１００の外部に移動する。これにより、スイッチング素子３ｕ～３ｗは冷却される。第１流路３１には複数のフィン２５が位置している。これにより、第１流路３１によるスイッチング素子３ｕ～３ｗの冷却効率を高めることができる。 As shown in FIGS. 5 to 7, the first flow path 31 is located directly below the switching elements 3u to 3w, which are heating elements. The heat generated in the switching elements 3u to 3w is transferred to the outside of the cooling device 100 by the refrigerant flowing through the first flow path 31. As a result, the switching elements 3u to 3w are cooled. A plurality of fins 25 are located in the first flow path 31 . Thereby, the cooling efficiency of the switching elements 3u to 3w by the first flow path 31 can be increased.
　一方、図５に示すように、第２流路３２は、スイッチング素子３ｕの直下から側方にずれた位置に配置されている。このため、第２流路３２を流れる冷媒は、第１流路３１を流れる冷媒と比較して、スイッチング素子３ｕで発生した熱の影響を受けにくい。 On the other hand, as shown in FIG. 5, the second flow path 32 is arranged at a position shifted laterally from directly below the switching element 3u. Therefore, the refrigerant flowing through the second flow path 32 is less affected by the heat generated in the switching element 3u than the refrigerant flowing through the first flow path 31.
　第１流路３１において第１領域２１の直下を通過した冷媒は、その後、第２領域２２の直下を通過することになるが、第２領域２２の直下を通過する前に、第２流路３２から流入した冷媒すなわち第１領域２１の直下を通過した冷媒よりも温度が低い冷媒と合流する。 The refrigerant that has passed directly under the first region 21 in the first flow path 31 will then pass directly under the second region 22, but before passing directly under the second region 22, the refrigerant It joins with the refrigerant that has flowed in from 32 , that is, the refrigerant that has a lower temperature than the refrigerant that has passed directly under the first region 21 .
　これにより、冷却装置１００は、第２流路３２を備えない場合と比較して、より低い温度の冷媒でスイッチング素子３ｖを冷却することができる。言い換えれば、スイッチング素子３ｕによる冷媒の温度上昇を抑えることができる。したがって、冷却装置１００は、スイッチング素子３ｕと、その下流に配置されたスイッチング素子３ｖとの間で、冷却温度にバラツキが生じることを抑制することができる。 Thereby, the cooling device 100 can cool the switching element 3v with a refrigerant at a lower temperature than when the second flow path 32 is not provided. In other words, it is possible to suppress the temperature rise of the refrigerant caused by the switching element 3u. Therefore, the cooling device 100 can suppress variations in cooling temperature between the switching element 3u and the switching element 3v arranged downstream thereof.
　図６に示すように、第３流路３３は、スイッチング素子３ｖの直下から側方にずれた位置に配置されている。このため、第３流路３３を流れる冷媒は、第１流路３１を流れる冷媒と比較して、スイッチング素子３ｖで発生した熱の影響を受けにくい。 As shown in FIG. 6, the third flow path 33 is arranged at a position shifted laterally from directly below the switching element 3v. Therefore, the refrigerant flowing through the third flow path 33 is less affected by the heat generated by the switching element 3v than the refrigerant flowing through the first flow path 31.
　第１流路３１において第２領域２２を通過した冷媒は、その後、第３領域２３を通過することになるが、第３領域２３の直下を通過する前に、第３流路３３から流入した冷媒すなわち第２領域２２の直下を通過した冷媒よりも温度が低い冷媒と合流する。 The refrigerant that has passed through the second region 22 in the first flow path 31 will then pass through the third region 23, but before passing directly under the third region 23, the refrigerant that has flowed in from the third flow path 33 will pass through the third region 23. It merges with the refrigerant, that is, the refrigerant whose temperature is lower than that of the refrigerant that passed directly under the second region 22 .
　これにより、冷却装置１００は、第３流路３３を備えない場合と比較して、より低い温度の冷媒でスイッチング素子３ｗを冷却することができる。言い換えれば、スイッチング素子３ｕ，３ｖによる冷媒の温度上昇を抑えることができる。したがって、冷却装置１００は、スイッチング素子３ｖと、その下流に配置されたスイッチング素子３ｗとの間で、冷却温度にバラツキが生じることを抑制することができる。 Thereby, the cooling device 100 can cool the switching element 3w with a lower temperature refrigerant compared to the case where the third flow path 33 is not provided. In other words, it is possible to suppress the temperature rise of the refrigerant caused by the switching elements 3u and 3v. Therefore, the cooling device 100 can suppress variations in cooling temperature between the switching element 3v and the switching element 3w arranged downstream thereof.
　このように、第１実施形態に係る冷却装置１００によれば、第１流路３１に加えて、第２流路３２および第３流路３３を備えることで、スイッチング素子３ｕ、スイッチング素子３ｖおよびスイッチング素子３ｗ間で、冷却温度にバラツキが生じることを抑制することができる。 Thus, according to the cooling device 100 according to the first embodiment, in addition to the first flow path 31, the second flow path 32 and the third flow path 33 are provided, so that the switching element 3u, the switching element 3v, and It is possible to suppress variations in cooling temperature between the switching elements 3w.
　また、第２流路３２から流れ込む冷媒および第３流路３３から流れ込む冷媒によって、第１流路３１を流れる冷媒の流量は、冷媒の流れ方向の下流に向かうほど多くなる。冷媒の流量が多くなるほどスイッチング素子３の熱抵抗は低下するため、これによっても、スイッチング素子３ｕ、スイッチング素子３ｖおよびスイッチング素子３ｗ間で、冷却温度にバラツキが生じることを抑制することができる。 Furthermore, due to the refrigerant flowing from the second flow path 32 and the refrigerant flowing from the third flow path 33, the flow rate of the refrigerant flowing through the first flow path 31 increases as it goes downstream in the flow direction of the refrigerant. Since the thermal resistance of the switching element 3 decreases as the flow rate of the refrigerant increases, it is also possible to suppress variations in cooling temperature between the switching element 3u, the switching element 3v, and the switching element 3w.
　図５および図６に示すように、第２流路３２の第１流路３１からの分岐部（後述する迂回部３２１）における流路断面積は、第１流路３１よりも小さく、かつ、第３流路３３の第２流路３２からの分岐部（後述する迂回部３３１）における流路断面積よりも大きい。これにより、第３流路３３における冷媒の流速が第２流路３２における冷媒の流速よりも速くなることから、スイッチング素子３ｕ、スイッチング素子３ｖおよびスイッチング素子３ｗの冷却温度をさらに均一化させることができる。 As shown in FIGS. 5 and 6, the cross-sectional area of the second flow path 32 at the branch part (detour part 321 described later) from the first flow path 31 is smaller than that of the first flow path 31, and The cross-sectional area of the third flow path 33 is larger than the cross-sectional area of the third flow path 33 at a branch portion from the second flow path 32 (detour portion 331 to be described later). As a result, the flow rate of the refrigerant in the third flow path 33 becomes faster than the flow speed of the refrigerant in the second flow path 32, so that the cooling temperatures of the switching elements 3u, 3v, and 3w can be made more uniform. can.
　次に、上述した第２流路３２および第３流路３３の具体的な構成例について図８を参照して説明する。図８は、第１実施形態に係る第２流路３２および第３流路３３の模式的な拡大図である。 Next, a specific configuration example of the second flow path 32 and the third flow path 33 described above will be described with reference to FIG. 8. FIG. 8 is a schematic enlarged view of the second flow path 32 and the third flow path 33 according to the first embodiment.
　図８に示すように、第２流路３２は、第２流路３２を流れる冷媒を第１流路３１へ案内する第１案内部５１を有する。 As shown in FIG. 8, the second flow path 32 has a first guide portion 51 that guides the refrigerant flowing through the second flow path 32 to the first flow path 31.
　具体的には、第２流路３２は、第１流路形成部３１１と筐体１０の内壁３０３との間に形成される迂回部３２１と、迂回部３２１の下流に位置する合流部３２２とを有する。そして、第２流路形成部３１２は、迂回部３２１における冷媒の流れ方向（Ｘ軸正方向）に沿って第１流路形成部３１１を仮想的に延ばした仮想線Ｌ１よりも筐体１０の内壁３０３側に位置する部位を有する。このように、第２流路３２は、迂回部３２１における冷媒の流れとぶつかる部位を第１案内部５１として有する。 Specifically, the second flow path 32 includes a detour portion 321 formed between the first flow path forming portion 311 and the inner wall 303 of the housing 10, and a confluence portion 322 located downstream of the detour portion 321. has. The second flow path forming portion 312 is located closer to the casing 10 than the imaginary line L1, which is an imaginary extension of the first flow path forming portion 311 along the refrigerant flow direction (X-axis positive direction) in the detour portion 321. It has a portion located on the inner wall 303 side. In this way, the second flow path 32 has a portion that collides with the flow of the refrigerant in the detour portion 321 as the first guide portion 51 .
　第２流路３２は、第１案内部５１を有することで、第２流路３２を流れる冷媒を効率よく第１流路３１に流入させることができる。すなわち、たとえば第２流路３２が第１案内部５１を有しない場合であっても、合流部３２２を通って第１流路３１に流れ込む冷媒は存在するが、第１流路３１を流れる冷媒の温度を低下させるのに十分な流量を得ることは難しい。これに対し、第１実施形態に係る第２流路３２は、第１案内部５１を有することで、迂回部３２１を流れる冷媒を積極的に合流部３２２へ向かわせることができるため、第２流路３２から第１流路３１に対して比較的速い流速で冷媒を流入させることができる。これにより、第１実施形態に係る第２流路３２は、第１流路３１を流れる冷媒の温度を効率よく低下させることができる。 By having the first guide portion 51, the second flow path 32 can efficiently cause the refrigerant flowing through the second flow path 32 to flow into the first flow path 31. That is, even if the second flow path 32 does not have the first guide portion 51, for example, there is refrigerant flowing into the first flow path 31 through the merging portion 322, but the refrigerant flowing through the first flow path 31 It is difficult to obtain a sufficient flow rate to reduce the temperature of the On the other hand, the second flow path 32 according to the first embodiment includes the first guide portion 51 and can actively direct the refrigerant flowing through the detour portion 321 toward the confluence portion 322. The refrigerant can flow from the flow path 32 into the first flow path 31 at a relatively high flow rate. Thereby, the second flow path 32 according to the first embodiment can efficiently lower the temperature of the refrigerant flowing through the first flow path 31.
　第２流路３２の合流部３２２は、迂回部３２１から第１流路３１に向かって斜めに延在している。具体的には、第１流路形成部３１１は、第２流路形成部３１２との間で合流部３２２を形成する第１壁面３１１ａを有する。また、第２流路形成部３１２は、第１流路形成部３１１との間で合流部３２２を形成する第２壁面３１２ａを有する。そして、これら第１壁面３１１ａおよび第２壁面３１２ａは、第１流路３１に向かって斜めに延在している。かかる構成とすることにより、第２流路３２から第１流路３１に対してより速い流速で冷媒を流入させることができる。したがって、第１実施形態に係る第２流路３２によれば、第１流路３１を流れる冷媒の温度を効率よく低下させることができる。 The merging portion 322 of the second flow path 32 extends obliquely from the detour portion 321 toward the first flow path 31 . Specifically, the first flow path forming section 311 has a first wall surface 311a that forms a confluence section 322 with the second flow path forming section 312. Further, the second flow path forming section 312 has a second wall surface 312a that forms a confluence section 322 with the first flow path forming section 311. The first wall surface 311a and the second wall surface 312a extend obliquely toward the first flow path 31. With this configuration, the refrigerant can flow from the second flow path 32 into the first flow path 31 at a higher flow rate. Therefore, according to the second flow path 32 according to the first embodiment, the temperature of the refrigerant flowing through the first flow path 31 can be efficiently lowered.
　第３流路３３は、第３流路３３を流れる冷媒を第１流路３１へ案内する第２案内部５２を有する。 The third flow path 33 has a second guide portion 52 that guides the refrigerant flowing through the third flow path 33 to the first flow path 31.
　具体的には、第３流路３３は、第２流路形成部３１２と筐体１０の内壁３０３との間に形成される迂回部３３１と、迂回部３３１の下流に位置する合流部３３２とを有する。そして、第３流路形成部３１３は、迂回部３３１における冷媒の流れ方向（Ｘ軸正方向）に沿って第２流路形成部３１２を仮想的に延ばした仮想線Ｌ２よりも筐体１０の内壁３０３側に位置する部位を有する。このように、第３流路３３は、迂回部３３１における冷媒の流れとぶつかる部位を第２案内部５２として有する。 Specifically, the third flow path 33 includes a detour portion 331 formed between the second flow path forming portion 312 and the inner wall 303 of the housing 10, and a confluence portion 332 located downstream of the detour portion 331. has. The third flow path forming portion 313 is located closer to the casing 10 than the imaginary line L2, which is an imaginary extension of the second flow path forming portion 312 along the refrigerant flow direction (X-axis positive direction) in the detour portion 331. It has a portion located on the inner wall 303 side. In this way, the third flow path 33 has a portion that collides with the flow of the refrigerant in the detour portion 331 as the second guide portion 52 .
　第３流路３３は、第２案内部５２を有することで、第３流路３３を流れる冷媒を効率よく第１流路３１に流入させることができる。これにより、第１実施形態に係る第３流路３３は、第１流路３１を流れる冷媒の温度を効率よく低下させることができる。 By having the second guide portion 52, the third flow path 33 can efficiently cause the refrigerant flowing through the third flow path 33 to flow into the first flow path 31. Thereby, the third flow path 33 according to the first embodiment can efficiently lower the temperature of the refrigerant flowing through the first flow path 31.
　また、第３流路３３の合流部３３２は、迂回部３３１から第１流路３１に向かって斜めに延在している。具体的には、第２流路形成部３１２は、第３流路形成部３１３との間で合流部３３２を形成する第３壁面３１２ｂを有する。また、第３流路形成部３１３は、第２流路形成部３１２との間で合流部３３２を形成する第４壁面３１３ａを有する。そして、これら第３壁面３１２ｂおよび第４壁面３１３ａは、第１流路３１に向かって斜めに延在している。かかる構成とすることにより、第３流路３３から第１流路３１に対してより速い流速で冷媒を流入させることができる。これにより、第１実施形態に係る第２流路３２は、第１流路３１を流れる冷媒の温度を効率よく低下させることができる。 Further, the merging portion 332 of the third flow path 33 extends diagonally from the detour portion 331 toward the first flow path 31. Specifically, the second flow path forming section 312 has a third wall surface 312b that forms a confluence section 332 with the third flow path forming section 313. Further, the third flow path forming section 313 has a fourth wall surface 313a that forms a confluence section 332 with the second flow path forming section 312. The third wall surface 312b and the fourth wall surface 313a extend obliquely toward the first flow path 31. With this configuration, the refrigerant can flow from the third flow path 33 into the first flow path 31 at a higher flow rate. Thereby, the second flow path 32 according to the first embodiment can efficiently lower the temperature of the refrigerant flowing through the first flow path 31.
（第２実施形態）
　次に、第２実施形態に係る冷却装置１００Ａの構成について説明する。図９は、第２実施形態に係る冷却装置１００Ａの内部構造を示す模式的な平断面図である。図９に示す平断面図は、図１０に示すＩＸ－ＩＸ線矢視における断面図に相当する。図１０は、図９に示すＸ－Ｘ線矢視における模式的な断面図である。図１１は、図９に示すＸＩ－ＸＩ線矢視における模式的な断面図である。図１２は、図９に示すＸＩＩ－ＸＩＩ線矢視における模式的な断面図である。図１３は、図９に示すＸＩＩＩ－ＸＩＩＩ線矢視における模式的な断面図である。 (Second embodiment)
Next, the configuration of the cooling device 100A according to the second embodiment will be described. FIG. 9 is a schematic cross-sectional plan view showing the internal structure of a cooling device 100A according to the second embodiment. The plan sectional view shown in FIG. 9 corresponds to the sectional view taken along the line IX-IX shown in FIG. FIG. 10 is a schematic cross-sectional view taken along the line XX shown in FIG. FIG. 11 is a schematic cross-sectional view taken along the line XI-XI shown in FIG. FIG. 12 is a schematic cross-sectional view taken along the line XII-XII shown in FIG. FIG. 13 is a schematic cross-sectional view taken along the line XIII-XIII shown in FIG.
　図９および図１０に示すように、第２実施形態に係る電力変換装置１Ａが備える冷却装置１００Ａは、筐体１０Ａの内部に第１流路３１Ａ、第２流路３２Ａおよび第３流路３３Ａを備える。第１流路３１Ａは、筐体１０Ａの流入口３０１Ａと流出口３０２Ａとを繋ぐ流路であり、平面視において第１領域２１、第２領域２２および第３領域２３と重複する。第１流路３１Ａには、ベースプレート２０の第２面２０２に設けられた複数のフィン２５が配置される。 As shown in FIGS. 9 and 10, a cooling device 100A included in a power conversion device 1A according to the second embodiment includes a first flow path 31A, a second flow path 32A, and a third flow path 33A inside a housing 10A. Equipped with. The first flow path 31A is a flow path that connects the inlet 301A and the outlet 302A of the housing 10A, and overlaps with the first region 21, the second region 22, and the third region 23 in plan view. A plurality of fins 25 provided on the second surface 202 of the base plate 20 are arranged in the first flow path 31A.
　第２実施形態において、第２流路３２Ａおよび第３流路３３Ａは、第１流路３１Ａの直下に位置している。すなわち、第２流路３２Ａは、平面視において第１領域２１と重複する位置に配置され、第３流路３３Ａは、平面視において第２領域２２と重複する位置に配置される。 In the second embodiment, the second flow path 32A and the third flow path 33A are located directly below the first flow path 31A. That is, the second flow path 32A is arranged at a position overlapping with the first region 21 in plan view, and the third flow path 33A is arranged at a position overlapping with second region 22 in plan view.
　筐体１０Ａは、ベースプレート２０と本体部３０Ａとを備える。また、本体部３０Ａは、内部に、第１流路形成部３１１Ａ、第２流路形成部３１２Ａおよび第３流路形成部３１３Ａを備える。第１流路形成部３１１Ａ、第２流路形成部３１２Ａおよび第３流路形成部３１３Ａは、冷媒の流れ方向（Ｘ軸方向）に沿ってこの順番で並べられる。また、第１流路形成部３１１Ａ、第２流路形成部３１２Ａおよび第３流路形成部３１３Ａは、互いに間隔をあけて配置される。 The housing 10A includes a base plate 20 and a main body 30A. Further, the main body portion 30A includes a first flow path forming portion 311A, a second flow path forming portion 312A, and a third flow path forming portion 313A inside. The first flow path forming section 311A, the second flow path forming section 312A, and the third flow path forming section 313A are arranged in this order along the refrigerant flow direction (X-axis direction). Further, the first flow path forming section 311A, the second flow path forming section 312A, and the third flow path forming section 313A are arranged at intervals from each other.
　第１流路形成部３１１Ａは、第１流路３１Ａと第２流路３２Ａとを隔てる隔壁である（図１１参照）。第２流路形成部３１２Ａは、第１流路３１Ａと第３流路３３Ａとを隔てる隔壁である（図１２参照）。 The first flow path forming portion 311A is a partition wall that separates the first flow path 31A and the second flow path 32A (see FIG. 11). The second flow path forming portion 312A is a partition wall that separates the first flow path 31A and the third flow path 33A (see FIG. 12).
　第２流路３２Ａは、流入口３０１Ａよりも下流かつ第１領域２１よりも上流の位置で第１流路３１Ａから分岐する。具体的には、第２流路３２Ａは、第１流路３１Ａにおける冷媒の流れ方向（Ｘ軸方向）と直交する方向（Ｚ軸方向）に第１領域２１を迂回するように第１流路３１Ａから分岐する。そして、第２流路３２Ａは、第１領域２１よりも下流かつ第２領域２２よりも上流の位置で第１流路３１Ａと合流する。 The second flow path 32A branches from the first flow path 31A at a position downstream of the inlet 301A and upstream of the first region 21. Specifically, the second flow path 32A detours around the first region 21 in a direction (Z-axis direction) perpendicular to the flow direction (X-axis direction) of the refrigerant in the first flow path 31A. Branches off from 31A. The second flow path 32A joins the first flow path 31A at a position downstream of the first region 21 and upstream of the second region 22.
　本体部３０Ａの内壁３０３Ａと第１流路形成部３１１Ａとの間に位置する隙間は、第２流路３２Ａの迂回部３２１Ａ（図１４参照）に相当する。また、第１流路形成部３１１Ａと第２流路形成部３１２Ａとの間に位置する隙間は、第２流路３２Ａにおける第１流路３１Ａへの合流部３２２Ａ（図１４参照）に相当する。 The gap located between the inner wall 303A of the main body portion 30A and the first flow path forming portion 311A corresponds to the detour portion 321A (see FIG. 14) of the second flow path 32A. Further, the gap located between the first flow path forming part 311A and the second flow path forming part 312A corresponds to a merging part 322A (see FIG. 14) in the second flow path 32A to the first flow path 31A. .
　第３流路３３Ａは、第２流路３２Ａから分岐して第１流路３１Ａと合流する。具体的には、第３流路３３Ａは、第２領域２２よりも上流の位置で第２流路３２Ａから分岐し、第２領域２２よりも下流かつ第３領域２３よりも上流の位置で第１流路３１Ａと合流する。 The third flow path 33A branches from the second flow path 32A and merges with the first flow path 31A. Specifically, the third flow path 33A branches from the second flow path 32A at a position upstream of the second region 22, and branches off from the second flow path 32A at a position downstream of the second region 22 and upstream of the third region 23. 1 flow path 31A.
　本体部３０Ａの内壁３０３Ａと第２流路形成部３１２Ａとの間に位置する隙間は、第３流路３３Ａの迂回部３３１Ａ（図１４参照）に相当する。また、第２流路形成部３１２Ａと第３流路形成部３１３Ａとの間に位置する隙間は、第３流路３３Ａにおける第１流路３１Ａへの合流部３３２Ａ（図１４参照）に相当する。 The gap located between the inner wall 303A of the main body portion 30A and the second flow path forming portion 312A corresponds to the detour portion 331A (see FIG. 14) of the third flow path 33A. Further, the gap located between the second flow path forming part 312A and the third flow path forming part 313A corresponds to a joining part 332A (see FIG. 14) of the third flow path 33A to the first flow path 31A. .
　図１１～図１３に示すように、発熱体であるスイッチング素子３ｕ～３ｗの直下には第１流路３１Ａが位置している。スイッチング素子３ｕ～３ｗで発生した熱は、第１流路３１Ａを流れる冷媒によって冷却装置１００Ａの外部に移動する。これにより、スイッチング素子３ｕ～３ｗは冷却される。第１流路３１Ａには複数のフィン２５が位置しており、これにより、スイッチング素子３ｕ～３ｗを効率よく冷却することができる。 As shown in FIGS. 11 to 13, the first flow path 31A is located directly below the switching elements 3u to 3w, which are heating elements. The heat generated in the switching elements 3u to 3w is transferred to the outside of the cooling device 100A by the refrigerant flowing through the first flow path 31A. As a result, the switching elements 3u to 3w are cooled. A plurality of fins 25 are located in the first flow path 31A, so that the switching elements 3u to 3w can be efficiently cooled.
　一方、図１１に示すように、第２流路３２Ａは、第１流路３１Ａよりもスイッチング素子３ｕから離れた位置に配置されている。このため、第２流路３２Ａを流れる冷媒は、第１流路３１Ａを流れる冷媒と比較して、スイッチング素子３ｕで発生した熱による温度上昇の影響を受けにくい。 On the other hand, as shown in FIG. 11, the second flow path 32A is located further away from the switching element 3u than the first flow path 31A. Therefore, the refrigerant flowing through the second flow path 32A is less susceptible to temperature rise due to heat generated in the switching element 3u, compared to the refrigerant flowing through the first flow path 31A.
　第１流路３１Ａにおいて第１領域２１の直下を通過した冷媒は、その後、第２領域２２の直下を通過することになるが、第２領域２２の直下を通過する前に、第２流路３２Ａから流入した冷媒すなわち第２領域２２の直下を通過する冷媒よりも温度が低い冷媒と合流する。 The refrigerant that has passed directly under the first region 21 in the first flow path 31A will then pass directly under the second region 22, but before passing directly under the second region 22, the refrigerant It merges with the refrigerant flowing from 32A, that is, the refrigerant whose temperature is lower than that of the refrigerant passing directly under the second region 22.
　これにより、冷却装置１００Ａは、第２流路３２Ａを備えない場合と比較して、より低い温度の冷媒でスイッチング素子３ｖを冷却することができる。言い換えれば、スイッチング素子３ｕによる冷媒の温度上昇を抑えることができる。したがって、冷却装置１００Ａは、スイッチング素子３ｕと、その下流に配置されたスイッチング素子３ｖとの間で、冷却温度にバラツキが生じることを抑制することができる。 Thereby, the cooling device 100A can cool the switching element 3v with a lower temperature refrigerant compared to the case where the second flow path 32A is not provided. In other words, it is possible to suppress the temperature rise of the refrigerant caused by the switching element 3u. Therefore, the cooling device 100A can suppress variations in cooling temperature between the switching element 3u and the switching element 3v arranged downstream thereof.
　図１２に示すように、第３流路３３Ａは、第１流路３１Ａよりもスイッチング素子３ｖから離れた位置に配置されている。このため、第３流路３３Ａを流れる冷媒は、第１流路３１Ａを流れる冷媒と比較して、スイッチング素子３ｖで発生した熱による温度上昇の影響を受けにくい。 As shown in FIG. 12, the third flow path 33A is located further away from the switching element 3v than the first flow path 31A. Therefore, the refrigerant flowing through the third flow path 33A is less susceptible to temperature rise due to heat generated by the switching element 3v, compared to the refrigerant flowing through the first flow path 31A.
　第１流路３１Ａにおいて第２領域２２を通過した冷媒は、その後、第３領域２３を通過することになるが、第３領域２３を通過する前に、第３流路３３Ａから流入した冷媒すなわちスイッチング素子３ｕおよびスイッチング素子３ｖによる温度上昇が少ない冷媒と合流することで、温度が低下する。 The refrigerant that has passed through the second region 22 in the first flow path 31A will then pass through the third region 23, but before passing through the third region 23, the refrigerant that has flowed from the third flow path 33A, The temperature decreases by merging with the refrigerant whose temperature increases less due to the switching elements 3u and 3v.
　これにより、冷却装置１００は、第３流路３３Ａを備えない場合と比較して、より低い温度の冷媒でスイッチング素子３ｗを冷却することができる。言い換えれば、スイッチング素子３ｕ，３ｖによる冷媒の温度上昇を抑えることができる。したがって、冷却装置１００Ａは、スイッチング素子３ｖと、その下流に配置されたスイッチング素子３ｗとの間で、冷却温度にバラツキが生じることを抑制することができる。 Thereby, the cooling device 100 can cool the switching element 3w with the refrigerant at a lower temperature compared to the case where the third flow path 33A is not provided. In other words, it is possible to suppress the temperature rise of the refrigerant caused by the switching elements 3u and 3v. Therefore, the cooling device 100A can suppress variations in cooling temperature between the switching element 3v and the switching element 3w arranged downstream thereof.
　このように、第２実施形態に係る冷却装置１００Ａによれば、第２流路３２Ａおよび第３流路３３Ａを備えることで、スイッチング素子３ｕ、スイッチング素子３ｖおよびスイッチング素子３ｗ間で、冷却温度にバラツキが生じることを抑制することができる。 As described above, according to the cooling device 100A according to the second embodiment, by providing the second flow path 32A and the third flow path 33A, the cooling temperature can be adjusted between the switching element 3u, the switching element 3v, and the switching element 3w. It is possible to suppress the occurrence of variations.
　図１１および図１２に示すように、第２流路３２Ａの第１流路３１Ａからの分岐部（後述する迂回部３２１Ａ）における流路断面積は、第１流路３１Ａよりも小さく、かつ、第３流路３３Ａの第２流路３２Ａからの分岐部（後述する迂回部３３１Ａ）における流路断面積よりも大きい。これにより、第３流路３３Ａにおける冷媒の流速が第２流路３２Ａにおける冷媒の流速よりも速くなることから、スイッチング素子３ｕ、スイッチング素子３ｖおよびスイッチング素子３ｗの冷却温度をさらに均一化させることができる。 As shown in FIGS. 11 and 12, the cross-sectional area of the second flow path 32A at the branch portion (detour portion 321A described later) from the first flow path 31A is smaller than that of the first flow path 31A, and The cross-sectional area of the third flow path 33A is larger than the flow path cross-sectional area at the branch portion (detour portion 331A described later) from the second flow path 32A. As a result, the flow rate of the refrigerant in the third flow path 33A becomes faster than the flow speed of the refrigerant in the second flow path 32A, so that the cooling temperatures of the switching elements 3u, 3v, and 3w can be made more uniform. can.
　第１流路形成部３１１Ａおよび第２流路形成部３１２Ａは、たとえば門型形状を有する（図１１および図１２参照）。このように、第１流路形成部３１１Ａおよび第２流路形成部３１２Ａを門型に形成することで、たとえば第１流路形成部３１１Ａおよび第２流路形成部３１２Ａを板状に形成した場合と比較して、第２流路３２Ａおよび第３流路３３の位置決めが容易となる。これにより、たとえば第２流路３２Ａおよび第３流路３３の高さが製品毎にばらつくことを抑制することができる。また、たとえば第１流路形成部３１１Ａおよび第２流路形成部３１２Ａを板状に形成した場合と比較して、第２流路３２Ａおよび第３流路３３の取り付け容易性を高めることができる。 The first flow path forming portion 311A and the second flow path forming portion 312A have, for example, a gate shape (see FIGS. 11 and 12). In this way, by forming the first flow path forming portion 311A and the second flow path forming portion 312A in a gate shape, for example, the first flow path forming portion 311A and the second flow path forming portion 312A are formed in a plate shape. Compared to the case, positioning of the second flow path 32A and the third flow path 33 becomes easier. Thereby, for example, it is possible to suppress variations in the heights of the second flow path 32A and the third flow path 33 from product to product. Furthermore, the ease of attaching the second flow path 32A and the third flow path 33 can be improved compared to, for example, the case where the first flow path forming portion 311A and the second flow path forming portion 312A are formed in a plate shape. .
　次に、上述した第２流路３２Ａおよび第３流路３３Ａの具体的な構成例について図１４を参照して説明する。図１４は、第２実施形態に係る第２流路３２Ａおよび第３流路３３Ａの模式的な拡大図である。 Next, a specific configuration example of the second flow path 32A and the third flow path 33A described above will be described with reference to FIG. 14. FIG. 14 is a schematic enlarged view of a second flow path 32A and a third flow path 33A according to the second embodiment.
　図１４に示すように、第２流路３２Ａは、第２流路３２Ａを流れる冷媒を第１流路３１Ａへ案内する第１案内部５１Ａを有する。 As shown in FIG. 14, the second flow path 32A has a first guide portion 51A that guides the refrigerant flowing through the second flow path 32A to the first flow path 31A.
　具体的には、第２流路３２Ａは、第１流路形成部３１１Ａと筐体１０Ａの内壁３０３Ａとの間に形成される迂回部３２１Ａと、迂回部３２１Ａの下流に位置する合流部３２２Ａとを有する。そして、第２流路形成部３１２Ａは、迂回部３２１Ａにおける冷媒の流れ方向（Ｘ軸正方向）に沿って第１流路形成部３１１Ａを仮想的に延ばした仮想線Ｌ３よりも筐体１０Ａの内壁３０３Ａ側に位置する部位を有する。このように、第２流路３２Ａは、迂回部３２１Ａにおける冷媒の流れとぶつかる部位を第１案内部５１Ａとして有する。 Specifically, the second flow path 32A includes a detour portion 321A formed between the first flow path forming portion 311A and the inner wall 303A of the housing 10A, and a confluence portion 322A located downstream of the detour portion 321A. has. The second flow path forming portion 312A is located closer to the casing 10A than the imaginary line L3, which is an imaginary extension of the first flow path forming portion 311A along the refrigerant flow direction (X-axis positive direction) in the detour portion 321A. It has a portion located on the inner wall 303A side. In this way, the second flow path 32A has a portion that collides with the flow of the refrigerant in the detour portion 321A as the first guide portion 51A.
　第２流路３２Ａは、第１案内部５１Ａを有することで、第２流路３２Ａを流れる冷媒を効率よく第１流路３１Ａに流入させることができる。これにより、第２実施形態に係る第２流路３２Ａは、第１流路３１Ａを流れる冷媒の温度を効率よく低下させることができる。 By having the first guide portion 51A, the second flow path 32A can efficiently cause the refrigerant flowing through the second flow path 32A to flow into the first flow path 31A. Thereby, the second flow path 32A according to the second embodiment can efficiently lower the temperature of the refrigerant flowing through the first flow path 31A.
　第３流路３３Ａは、第３流路３３Ａを流れる冷媒を第１流路３１Ａへ案内する第２案内部５２Ａを有する。 The third flow path 33A has a second guide portion 52A that guides the refrigerant flowing through the third flow path 33A to the first flow path 31A.
　具体的には、第３流路３３Ａは、第２流路形成部３１２Ａと筐体１０Ａの内壁３０３Ａとの間に形成される迂回部３３１Ａと、迂回部３３１Ａの下流に位置する合流部３３２Ａとを有する。そして、第３流路形成部３１３Ａは、迂回部３３１Ａにおける冷媒の流れ方向（Ｘ軸正方向）に沿って第２流路形成部３１２Ａを仮想的に延ばした仮想線Ｌ４よりも筐体１０Ａの内壁３０３Ａ側に位置する部位を有する。このように、第３流路３３Ａは、迂回部３３１Ａにおける冷媒の流れとぶつかる部位を第２案内部５２Ａとして有する。 Specifically, the third flow path 33A includes a detour portion 331A formed between the second flow path forming portion 312A and the inner wall 303A of the housing 10A, and a confluence portion 332A located downstream of the detour portion 331A. has. The third flow path forming portion 313A is located closer to the housing 10A than the virtual line L4, which is a virtual line extending the second flow path forming portion 312A along the refrigerant flow direction (X-axis positive direction) in the detour portion 331A. It has a portion located on the inner wall 303A side. In this way, the third flow path 33A has a portion that collides with the flow of the refrigerant in the detour portion 331A as the second guide portion 52A.
　第３流路３３Ａは、第２案内部５２Ａを有することで、第３流路３３Ａを流れる冷媒を効率よく第１流路３１Ａに流入させることができる。これにより、第２実施形態に係る第３流路３３Ａは、第１流路３１Ａを流れる冷媒の温度を効率よく低下させることができる。 By having the second guide portion 52A, the third flow path 33A can efficiently cause the refrigerant flowing through the third flow path 33A to flow into the first flow path 31A. Thereby, the third flow path 33A according to the second embodiment can efficiently lower the temperature of the refrigerant flowing through the first flow path 31A.
　本願発明者は、冷媒の流量をそれぞれ６Ｌ／ｍｉｎ、８Ｌ／ｍｉｎ、１０Ｌ／ｍｉｎに設定した場合におけるスイッチング素子３の熱抵抗を測定した。その結果を図１５に示す。図１５は、冷媒の流量とスイッチング素子３の熱抵抗との関係を示すグラフである。図１５に示すように、冷媒の流量が多くなるほどスイッチング素子３の熱抵抗が低下する結果が示された。 The inventor of this application measured the thermal resistance of the switching element 3 when the flow rate of the refrigerant was set to 6 L/min, 8 L/min, and 10 L/min, respectively. The results are shown in FIG. FIG. 15 is a graph showing the relationship between the flow rate of the refrigerant and the thermal resistance of the switching element 3. As shown in FIG. 15, the results showed that the thermal resistance of the switching element 3 decreased as the flow rate of the refrigerant increased.
　また、本願発明者は、上記実験結果を基に、下記の条件にてスイッチング素子３ｕ～３ｗの各温度をシミュレーションにより算出した。
＜シミュレーションの条件＞
　スイッチング素子３ｕ～３ｗの発熱量・・・６５０Ｗ
　冷媒の流量（条件１）・・・８Ｌ／ｍｉｎ（スイッチング素子３ｕ～３ｗで流量一定）
　冷媒の流量（条件２）・・・スイッチング素子３ｕ：６Ｌ／ｍｉｎ、スイッチング素子３ｖ：８Ｌ／ｍｉｎ、スイッチング素子３ｖ：１０Ｌ／ｍｉｎ In addition, the inventor of the present application calculated each temperature of the switching elements 3u to 3w by simulation based on the above experimental results under the following conditions.
<Simulation conditions>
Heat generation amount of switching elements 3u to 3w...650W
Refrigerant flow rate (condition 1)...8L/min (constant flow rate with switching elements 3u to 3w)
Refrigerant flow rate (condition 2)...Switching element 3u: 6L/min, Switching element 3v: 8L/min, Switching element 3v: 10L/min
　条件１の流量は、第２流路および第３流路を有しない冷却装置を用いて冷却を行った場合の冷媒の流量を示している。また、条件２では、第１流路の流量を６Ｌ／ｍｉｎに設定し、第２流路および第３流路の流量をそれぞれ２Ｌ／ｍｉｎに設定した。 The flow rate of condition 1 indicates the flow rate of the refrigerant when cooling is performed using a cooling device that does not have the second flow path and the third flow path. Further, under condition 2, the flow rate of the first flow path was set to 6 L/min, and the flow rates of the second flow path and the third flow path were each set to 2 L/min.
　図１６は、条件１および条件２にてスイッチング素子３ｕ～３ｗの温度を算出した結果を示すグラフである。図１６に示すように、条件１にて計算を行った場合、最上流に配置されるスイッチング素子３ｕと最下流に配置されるスイッチング素子３ｗとの温度差は、５．６℃であった。これに対し、条件２にて計算を行った場合、スイッチング素子３ｕ～３ｗ間で温度差はほとんど生じなかった。 FIG. 16 is a graph showing the results of calculating the temperatures of the switching elements 3u to 3w under conditions 1 and 2. As shown in FIG. 16, when calculation was performed under Condition 1, the temperature difference between the switching element 3u placed at the most upstream position and the switching element 3w placed at the most downstream position was 5.6°C. On the other hand, when calculation was performed under Condition 2, almost no temperature difference occurred between the switching elements 3u to 3w.
　これらの結果から明らかなように、第１流路に加えて第２流路および第３流路を有する冷却装置は、スイッチング素子３ｕ～３ｗ間における冷却温度のバラツキを抑制することが可能である。 As is clear from these results, the cooling device having the second flow path and the third flow path in addition to the first flow path can suppress variations in cooling temperature between the switching elements 3u to 3w. .
（その他の変形例）
　第１実施形態および第２実施形態では、第２流路が第１流路から分岐する場合の例を示したが、第２流路は、必ずしも第１流路から分岐していることを要しない。同様に、第３流路は、必ずしも第２流路から分岐していることを要しない。たとえば、筐体に設けられた複数の流入口の各々に第１流路、第２流路および第３流路がつながっている構成であってもよい。 (Other variations)
In the first and second embodiments, an example was shown in which the second flow path branches from the first flow path, but the second flow path does not necessarily have to branch from the first flow path. do not. Similarly, the third flow path does not necessarily need to be branched from the second flow path. For example, a configuration may be adopted in which a first flow path, a second flow path, and a third flow path are connected to each of a plurality of inflow ports provided in the housing.
　第２実施形態では、第２流路３２Ａの合流部３２２Ａおよび第３流路３３Ａの合流部３３２Ａが第１流路３１Ａに向かって鉛直上方に延在する例を示したが、合流部３２２Ａ，３３２Ａは、第１実施形態と同様に第１流路３１Ａに向かって斜めに延在していてもよい。これにより、第１流路３１Ａを流れる冷媒の温度を効率よく低下させることができる。 In the second embodiment, an example was shown in which the merging portion 322A of the second flow path 32A and the merging portion 332A of the third flow path 33A extend vertically upward toward the first flow path 31A, but the merging portion 322A, 332A may extend diagonally toward the first flow path 31A similarly to the first embodiment. Thereby, the temperature of the refrigerant flowing through the first flow path 31A can be efficiently lowered.
（応用例）
　上述した各実施形態に係る電力変換装置１は、例えば、ハイブリッド自動車や電気自動車等の車両に搭載されるモータシステムに適用されても良い。 (Application example)
The power conversion device 1 according to each of the embodiments described above may be applied to, for example, a motor system mounted on a vehicle such as a hybrid vehicle or an electric vehicle.
　上述してきたように、実施形態に係る冷却装置（一例として、冷却装置１００，１００Ａ）は、発熱体を冷却する冷却装置であって、筐体（一例として、筐体１０，１０Ａ）と、第１流路（一例として、第１流路３１，３１Ａ）と、第２流路（一例として、第２流路３２，３２Ａ）とを備える。筐体は、冷媒の流入口（一例として、流入口３０１，３０１Ａ）および流出口（一例として、流出口３０２，３０２Ａ）を有し、第１の発熱体（一例として、スイッチング素子３ｕ）に接する第１領域（一例として、第１領域２１）と第２の発熱体（一例として、スイッチング素子３ｖ）に接する第２領域（一例として、第２領域２２）とを含む。第１流路は、流入口と流出口とを繋ぐ流路であって、筐体を平面視した場合に、第１領域および第２領域と重複する。第２流路は、第１領域よりも下流かつ第２領域よりも上流の位置で第１流路と合流する。また、第２流路は、第２流路を流れる冷媒を第１流路へ案内する案内部（一例として、第１案内部５１，５１Ａ）を有する。 As described above, the cooling device according to the embodiment (as an example, the cooling device 100, 100A) is a cooling device that cools a heating element, and includes a housing (as an example, the housing 10, 10A), It includes one flow path (for example, first flow paths 31 and 31A) and a second flow path (for example, second flow paths 32 and 32A). The housing has a refrigerant inlet (for example, inlet 301, 301A) and an outlet (for example, outlet 302, 302A), and is in contact with the first heating element (for example, switching element 3u). It includes a first region (for example, the first region 21) and a second region (for example, the second region 22) in contact with the second heating element (for example, the switching element 3v). The first channel is a channel that connects the inlet and the outlet, and overlaps with the first region and the second region when the casing is viewed from above. The second flow path merges with the first flow path at a position downstream of the first region and upstream of the second region. Further, the second flow path includes a guide portion (for example, the first guide portions 51 and 51A) that guides the refrigerant flowing through the second flow path to the first flow path.
　したがって、実施形態に係る冷却装置によれば、複数の冷却対象物間における冷却温度のバラツキを抑制することができる。 Therefore, according to the cooling device according to the embodiment, it is possible to suppress variations in cooling temperature among a plurality of objects to be cooled.
　なお、本技術は以下のような構成をとることが可能である。
（１）発熱体を冷却する冷却装置であって、
　冷媒の流入口および流出口を有し、第１の発熱体に接する第１領域と第２の発熱体に接する第２領域とを含む筐体と、
　前記流入口と前記流出口とを繋ぐ流路であって、前記筐体を平面視した場合に、前記第１領域および前記第２領域と重複する第１流路と、
　前記第１領域よりも下流かつ前記第２領域よりも上流の位置で前記第１流路と合流する第２流路と
　を備え、
　前記第２流路は、前記第２流路を流れる前記冷媒を前記第１流路へ案内する案内部を有する、冷却装置。
（２）前記第２流路は、前記流入口よりも下流かつ前記第１領域よりも上流の位置で前記第１流路から分岐する、（１）に記載の冷却装置。
（３）前記第２流路は、前記筐体を平面視した場合に、前記第１領域および前記第２領域と重複しない位置に配置される、（１）または（２）に記載の冷却装置。
（４）前記第１流路および前記第２流路は、前記筐体を平面視した場合に、前記第１流路と重複する位置に配置される、（１）または（２）に記載の冷却装置。
（５）前記筐体は、
　前記第１流路と前記第２流路とを隔てる第１流路形成部と、
　前記第１流路形成部よりも下流に配置され、前記第１流路形成部との間で前記第２流路における前記第１流路への合流部を形成する第２流路形成部と
　を備え、
　前記第２流路は、
　前記第１流路形成部と前記筐体の内壁との間に形成される迂回部と、
　前記迂回部の下流に位置する前記合流部と
　を有し、
　前記第２流路形成部は、前記迂回部における前記冷媒の流れ方向に沿って前記第１流路形成部を仮想的に延ばした仮想線よりも前記筐体の内壁側に位置する部位を前記案内部として有する、（１）～（４）のいずれか一つに記載の冷却装置。
（６）前記第１流路形成部は、前記第２流路形成部との間で前記合流部を形成する第１壁面を有し、
　前記第２流路形成部は、前記第１壁面との間で前記合流部を形成する第２壁面を有し、
　前記第１壁面および前記第２壁面は、前記第１流路に向かって斜めに延在する、（５）に記載の冷却装置。
（７）前記第２流路から分岐して前記第１流路と合流する第３流路をさらに備え、
　前記筐体は、第３の発熱体に接する第３領域をさらに含み、
　前記第１流路は、前記筐体を平面視した場合に、前記筐体の前記第１領域、前記第２領域および前記第３領域と重複し、
　前記第３流路は、前記第２領域よりも上流の位置で前記第２流路から分岐し、前記第２領域よりも下流かつ前記第３領域よりも上流の位置で前記第１流路と合流する、（２）～（６）のいずれか一つに記載の冷却装置。
（８）前記第２流路の前記第１流路からの分岐部における流路断面積は、前記第１流路の流路断面積よりも小さく、且つ、前記第３流路の前記第２流路からの分岐部における流路断面積よりも大きい、（７）に記載の冷却装置。
（９）冷媒の流入口および流出口を有する筐体と、
　前記流入口と前記流出口とを繋ぐ流路であって、前記筐体を平面視した場合に、前記筐体の第１領域および第２領域と重複する第１流路と、
　前記第１領域に配置される第１半導体素子と、
　前記第２領域に配置される第２半導体素子と、
　前記第１領域よりも下流かつ前記第２領域よりも上流の位置で前記第１流路と合流する第２流路と
　を備え、
　前記第２流路は、前記第２流路を流れる前記冷媒を前記第１流路へ案内する案内部を有する、半導体装置。
（１０）前記第２流路から分岐して前記第１流路と合流する第３流路をさらに備え、
　前記第１流路は、前記筐体を平面視した場合に、前記筐体の前記第１領域、前記第２領域および第３領域と重複し、
　前記第３領域に配置される第３半導体素子をさらに備え、
　前記第３流路は、前記第２領域よりも上流の位置で前記第２流路から分岐し、前記第２領域よりも下流かつ前記第３領域よりも上流の位置で前記第１流路と合流する、（９）に記載の半導体装置。
（１１）前記筐体は、
　前記第１流路、前記第２流路および前記第３流路の少なくとも一部の内壁面を構成する溝を有する本体部と、
　第１面および前記第１面の反対に位置する第２面を有し、前記第２面において前記溝の開放部を塞ぐ板状のベースプレートと
　を備え、
　前記第１半導体素子、前記第２半導体素子および前記第３半導体素子は、前記ベースプレートの前記第１面に配置され、前記ベースプレートの前記第２面に複数のフィンが設けられた、（１０）に記載の半導体装置。
（１２）前記第１半導体素子、前記第２半導体素子および前記第３半導体素子は、絶縁ゲート型バイポーラトランジスタまたはパワーＭＯＳＦＥＴである、（１０）または（１１）に記載の半導体装置。 Note that the present technology can have the following configuration.
(1) A cooling device that cools a heating element,
a casing that has a refrigerant inlet and an outlet and includes a first region in contact with the first heating element and a second region in contact with the second heating element;
a first flow path that connects the inflow port and the outflow port and overlaps the first region and the second region when the casing is viewed from above;
a second flow path that merges with the first flow path at a position downstream of the first region and upstream of the second region;
The second flow path is a cooling device including a guide portion that guides the refrigerant flowing through the second flow path to the first flow path.
(2) The cooling device according to (1), wherein the second flow path branches from the first flow path at a position downstream of the inlet and upstream of the first region.
(3) The cooling device according to (1) or (2), wherein the second flow path is arranged at a position that does not overlap with the first region and the second region when the casing is viewed from above. .
(4) The first flow path and the second flow path according to (1) or (2) are arranged at positions overlapping with the first flow path when the casing is viewed from above. Cooling system.
(5) The casing is
a first flow path forming part that separates the first flow path and the second flow path;
a second flow path forming section that is disposed downstream of the first flow path forming section and forms a confluence section with the first flow path in the second flow path; Equipped with
The second flow path is
a detour portion formed between the first flow path forming portion and an inner wall of the casing;
and the confluence part located downstream of the detour part,
The second flow path forming section includes a portion located closer to the inner wall of the casing than a virtual line extending the first flow path forming section along the flow direction of the refrigerant in the detour section. The cooling device according to any one of (1) to (4), which has the cooling device as a guide portion.
(6) the first flow path forming section has a first wall surface forming the confluence section with the second flow path forming section;
The second flow path forming section has a second wall surface forming the confluence section with the first wall surface,
The cooling device according to (5), wherein the first wall surface and the second wall surface extend obliquely toward the first flow path.
(7) further comprising a third flow path branching from the second flow path and merging with the first flow path;
The casing further includes a third region in contact with a third heating element,
The first flow path overlaps with the first region, the second region, and the third region of the casing when the casing is viewed from above,
The third flow path branches from the second flow path at a position upstream of the second region, and connects with the first flow path at a position downstream of the second region and upstream of the third region. The cooling device according to any one of (2) to (6), which joins together.
(8) A cross-sectional area of the second flow path at a branching portion from the first flow path is smaller than a cross-sectional area of the first flow path, and The cooling device according to (7), which is larger than the cross-sectional area of the flow path at the branch portion from the flow path.
(9) a casing having a refrigerant inlet and an outlet;
a first flow path that connects the inflow port and the outflow port and overlaps a first region and a second region of the casing when the casing is viewed from above;
a first semiconductor element disposed in the first region;
a second semiconductor element disposed in the second region;
a second flow path that merges with the first flow path at a position downstream of the first region and upstream of the second region;
In the semiconductor device, the second flow path includes a guide portion that guides the refrigerant flowing through the second flow path to the first flow path.
(10) further comprising a third flow path branching from the second flow path and merging with the first flow path;
The first flow path overlaps with the first region, the second region, and the third region of the casing when the casing is viewed from above,
further comprising a third semiconductor element disposed in the third region,
The third flow path branches from the second flow path at a position upstream of the second region, and connects with the first flow path at a position downstream of the second region and upstream of the third region. The semiconductor device according to (9), which merges.
(11) The casing includes:
a main body portion having a groove forming an inner wall surface of at least a portion of the first flow path, the second flow path, and the third flow path;
a plate-shaped base plate having a first surface and a second surface located opposite to the first surface, and closing the opening of the groove on the second surface;
In (10), the first semiconductor element, the second semiconductor element, and the third semiconductor element are arranged on the first surface of the base plate, and a plurality of fins are provided on the second surface of the base plate. The semiconductor device described.
(12) The semiconductor device according to (10) or (11), wherein the first semiconductor element, the second semiconductor element, and the third semiconductor element are insulated gate bipolar transistors or power MOSFETs.
　今回開示された実施形態は全ての点で例示であって制限的なものではないと考えられるべきである。実に、上記した実施形態は多様な形態で具現され得る。また、上記の実施形態は、添付の請求の範囲およびその趣旨を逸脱することなく、様々な形態で省略、置換、変更されても良い。 The embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. Indeed, the embodiments described above may be implemented in various forms. Moreover, the above-described embodiments may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.
　１　電力変換装置
　２　モータ
　３　スイッチング素子
　４　ダイオード
　５　ゲートドライバ
　１０　筐体
　２０　ベースプレート
　２１　第１領域
　２２　第２領域
　２３　第３領域
　２５　フィン
　３０　本体部
　３１　第１流路
　３２　第２流路
　３３　第３流路
　５１　第１案内部
　５２　第２案内部
　１００　冷却装置
　３０１　流入口
　３０２　流出口
　３０３　内壁
　３１１　第１流路形成部
　３１２　第２流路形成部
　３１３　第３流路形成部
　３２１　迂回部
　３２２　合流部
　３３１　迂回部
　３３２　合流部 1 Power converter 2 Motor 3 Switching element 4 Diode 5 Gate driver 10 Housing 20 Base plate 21 First region 22 Second region 23 Third region 25 Fin 30 Main body 31 First channel 32 Second channel 33 Third flow Channel 51 First guide section 52 Second guide section 100 Cooling device 301 Inlet 302 Outlet 303 Inner wall 311 First channel forming section 312 Second channel forming section 313 Third channel forming section 321 Detour section 322 Merging section 331 Detour section 332 Confluence section

Claims (12)

  1. 　発熱体を冷却する冷却装置であって、
    　冷媒の流入口および流出口を有し、第１の発熱体に接する第１領域と第２の発熱体に接する第２領域とを含む筐体と、
    　前記流入口と前記流出口とを繋ぐ流路であって、前記筐体を平面視した場合に、前記第１領域および前記第２領域と重複する第１流路と、
    　前記第１領域よりも下流かつ前記第２領域よりも上流の位置で前記第１流路と合流する第２流路と
    　を備え、
    　前記第２流路は、前記第２流路を流れる前記冷媒を前記第１流路へ案内する案内部を有する、冷却装置。     A cooling device that cools a heating element,
    a casing having a refrigerant inlet and an outlet and including a first region in contact with the first heating element and a second region in contact with the second heating element;
    a first flow path that connects the inflow port and the outflow port and overlaps the first region and the second region when the casing is viewed from above;
    a second flow path that merges with the first flow path at a position downstream of the first region and upstream of the second region;
    The second flow path is a cooling device including a guide portion that guides the refrigerant flowing through the second flow path to the first flow path.
  2. 　前記第２流路は、前記流入口よりも下流かつ前記第１領域よりも上流の位置で前記第１流路から分岐する、請求項１に記載の冷却装置。 The cooling device according to claim 1, wherein the second flow path branches from the first flow path at a position downstream of the inlet and upstream of the first region.
  3. 　前記第２流路は、前記筐体を平面視した場合に、前記第１領域および前記第２領域と重複しない位置に配置される、請求項１に記載の冷却装置。 The cooling device according to claim 1, wherein the second flow path is arranged at a position that does not overlap with the first region and the second region when the casing is viewed from above.
  4. 　前記第１流路および前記第２流路は、前記筐体を平面視した場合に、前記第１流路と重複する位置に配置される、請求項１に記載の冷却装置。 The cooling device according to claim 1, wherein the first flow path and the second flow path are arranged at positions overlapping with the first flow path when the casing is viewed from above.
  5. 　前記筐体は、
    　前記第１流路と前記第２流路とを隔てる第１流路形成部と、
    　前記第１流路形成部よりも下流に配置され、前記第１流路形成部との間で前記第２流路における前記第１流路への合流部を形成する第２流路形成部と
    　を備え、
    　前記第２流路は、
    　前記第１流路形成部と前記筐体の内壁との間に形成される迂回部と、
    　前記迂回部の下流に位置する前記合流部と
    　を有し、
    　前記第２流路形成部は、前記迂回部における前記冷媒の流れ方向に沿って前記第１流路形成部を仮想的に延ばした仮想線よりも前記筐体の内壁側に位置する部位を前記案内部として有する、請求項１に記載の冷却装置。     The casing is
    a first flow path forming part that separates the first flow path and the second flow path;
    a second flow path forming section that is disposed downstream of the first flow path forming section and forms a confluence section with the first flow path in the second flow path; Equipped with
    The second flow path is
    a detour portion formed between the first flow path forming portion and an inner wall of the casing;
    and the confluence part located downstream of the detour part,
    The second flow path forming section includes a portion located closer to the inner wall of the casing than a virtual line extending the first flow path forming section along the flow direction of the refrigerant in the detour section. The cooling device according to claim 1, having the cooling device as a guide portion.
  6. 　前記第１流路形成部は、前記第２流路形成部との間で前記合流部を形成する第１壁面を有し、
    　前記第２流路形成部は、前記第１壁面との間で前記合流部を形成する第２壁面を有し、
    　前記第１壁面および前記第２壁面は、前記第１流路に向かって斜めに延在する、請求項５に記載の冷却装置。     The first flow path forming section has a first wall surface forming the confluence section with the second flow path forming section,
    The second flow path forming section has a second wall surface forming the confluence section with the first wall surface,
    The cooling device according to claim 5, wherein the first wall surface and the second wall surface extend obliquely toward the first flow path.
  7. 　前記第２流路から分岐して前記第１流路と合流する第３流路をさらに備え、
    　前記筐体は、第３の発熱体に接する第３領域をさらに含み、
    　前記第１流路は、前記筐体を平面視した場合に、前記筐体の前記第１領域、前記第２領域および前記第３領域と重複し、
    　前記第３流路は、前記第２領域よりも上流の位置で前記第２流路から分岐し、前記第２領域よりも下流かつ前記第３領域よりも上流の位置で前記第１流路と合流する、請求項２に記載の冷却装置。     further comprising a third flow path that branches from the second flow path and merges with the first flow path,
    The casing further includes a third region in contact with a third heating element,
    The first flow path overlaps with the first region, the second region, and the third region of the casing when the casing is viewed from above,
    The third flow path branches from the second flow path at a position upstream of the second region, and connects with the first flow path at a position downstream of the second region and upstream of the third region. 3. The cooling device according to claim 2, wherein the cooling device is merging.
  8. 　前記第２流路の前記第１流路からの分岐部における流路断面積は、前記第１流路の流路断面積よりも小さく、且つ、前記第３流路の前記第２流路からの分岐部における流路断面積よりも大きい、請求項７に記載の冷却装置。 The cross-sectional area of the second flow path at the branching portion from the first flow path is smaller than the cross-sectional area of the first flow path, and The cooling device according to claim 7, wherein the cross-sectional area of the flow path is larger than the cross-sectional area of the flow path at the branch portion.
  9. 　冷媒の流入口および流出口を有する筐体と、
    　前記流入口と前記流出口とを繋ぐ流路であって、前記筐体を平面視した場合に、前記筐体の第１領域および第２領域と重複する第１流路と、
    　前記第１領域に配置される第１半導体素子と、
    　前記第２領域に配置される第２半導体素子と、
    　前記第１領域よりも下流かつ前記第２領域よりも上流の位置で前記第１流路と合流する第２流路と
    　を備え、
    　前記第２流路は、前記第２流路を流れる前記冷媒を前記第１流路へ案内する案内部を有する、半導体装置。     a casing having a refrigerant inlet and an outlet;
    a first flow path that connects the inflow port and the outflow port and overlaps a first region and a second region of the casing when the casing is viewed from above;
    a first semiconductor element disposed in the first region;
    a second semiconductor element disposed in the second region;
    a second flow path that merges with the first flow path at a position downstream of the first region and upstream of the second region;
    In the semiconductor device, the second flow path includes a guide portion that guides the refrigerant flowing through the second flow path to the first flow path.
  10. 　前記第２流路から分岐して前記第１流路と合流する第３流路をさらに備え、
    　前記第１流路は、前記筐体を平面視した場合に、前記筐体の前記第１領域、前記第２領域および第３領域と重複し、
    　前記第３領域に配置される第３半導体素子をさらに備え、
    　前記第３流路は、前記第２領域よりも上流の位置で前記第２流路から分岐し、前記第２領域よりも下流かつ前記第３領域よりも上流の位置で前記第１流路と合流する、請求項９に記載の半導体装置。     further comprising a third flow path that branches from the second flow path and merges with the first flow path,
    The first flow path overlaps with the first region, the second region, and the third region of the casing when the casing is viewed from above,
    further comprising a third semiconductor element disposed in the third region,
    The third flow path branches from the second flow path at a position upstream of the second region, and connects with the first flow path at a position downstream of the second region and upstream of the third region. The semiconductor device according to claim 9, wherein the semiconductor device merges.
  11. 　前記筐体は、
    　前記第１流路、前記第２流路および前記第３流路の少なくとも一部の内壁面を構成する溝を有する本体部と、
    　第１面および前記第１面の反対に位置する第２面を有し、前記第２面において前記溝の開放部を塞ぐ板状のベースプレートと
    　を備え、
    　前記第１半導体素子、前記第２半導体素子および前記第３半導体素子は、前記ベースプレートの前記第１面に配置され、前記ベースプレートの前記第２面に複数のフィンが設けられた、請求項１０に記載の半導体装置。     The casing is
    a main body portion having a groove forming an inner wall surface of at least a portion of the first flow path, the second flow path, and the third flow path;
    a plate-shaped base plate having a first surface and a second surface located opposite to the first surface, and closing the opening of the groove on the second surface;
    11. The first semiconductor element, the second semiconductor element, and the third semiconductor element are arranged on the first surface of the base plate, and a plurality of fins are provided on the second surface of the base plate. The semiconductor device described.
  12. 　前記第１半導体素子、前記第２半導体素子および前記第３半導体素子は、絶縁ゲート型バイポーラトランジスタまたはパワーＭＯＳＦＥＴである、請求項１０または１１に記載の半導体装置。 The semiconductor device according to claim 10 or 11, wherein the first semiconductor element, the second semiconductor element, and the third semiconductor element are insulated gate bipolar transistors or power MOSFETs.
PCT/JP2023/022655 2022-06-20 2023-06-19 Cooling device and semiconductor device WO2023248989A1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079337A (en) * 2003-08-29 2005-03-24 Toshiba Corp Liquid cooled apparatus and system thereof
JP2010153785A (en) * 2008-11-28 2010-07-08 Fuji Electric Systems Co Ltd Semiconductor cooling device
WO2012147544A1 (en) * 2011-04-26 2012-11-01 富士電機株式会社 Cooler for semiconductor module, and semiconductor module
JP2013055056A (en) * 2011-09-01 2013-03-21 Sb Limotive Co Ltd Battery pack
WO2016194158A1 (en) * 2015-06-03 2016-12-08 三菱電機株式会社 Liquid-cooled cooler, and manufacturing method for radiating fin in liquid-cooled cooler
WO2022255159A1 (en) * 2021-05-31 2022-12-08 株式会社ヴァレオジャパン Battery cooling unit and battery cooling system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079337A (en) * 2003-08-29 2005-03-24 Toshiba Corp Liquid cooled apparatus and system thereof
JP2010153785A (en) * 2008-11-28 2010-07-08 Fuji Electric Systems Co Ltd Semiconductor cooling device
WO2012147544A1 (en) * 2011-04-26 2012-11-01 富士電機株式会社 Cooler for semiconductor module, and semiconductor module
JP2013055056A (en) * 2011-09-01 2013-03-21 Sb Limotive Co Ltd Battery pack
WO2016194158A1 (en) * 2015-06-03 2016-12-08 三菱電機株式会社 Liquid-cooled cooler, and manufacturing method for radiating fin in liquid-cooled cooler
WO2022255159A1 (en) * 2021-05-31 2022-12-08 株式会社ヴァレオジャパン Battery cooling unit and battery cooling system

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