WO2023163032A1 - Terahertz wave output apparatus and method for outputting terahertz wave - Google Patents

Terahertz wave output apparatus and method for outputting terahertz wave Download PDF

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WO2023163032A1
WO2023163032A1 PCT/JP2023/006430 JP2023006430W WO2023163032A1 WO 2023163032 A1 WO2023163032 A1 WO 2023163032A1 JP 2023006430 W JP2023006430 W JP 2023006430W WO 2023163032 A1 WO2023163032 A1 WO 2023163032A1
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wave
layer
terahertz
output device
intermediate layer
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PCT/JP2023/006430
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French (fr)
Japanese (ja)
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誠 中嶋
幹彦 西谷
大陽 松永
ウサラ バリン カトリン ペンダン マグ
バーダッド カニーラ アグルート
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国立大学法人大阪大学
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Publication of WO2023163032A1 publication Critical patent/WO2023163032A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/14—Reflecting surfaces; Equivalent structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid

Definitions

  • the present disclosure relates to a terahertz wave output device.
  • Terahertz waves are expected to be a next-generation elemental technology, such as for use in the 6th generation mobile communication system (6G).
  • Patent Literature 1 discloses a technique for increasing the intensity by overlapping the irradiation regions of two terahertz waves.
  • Patent Document 1 has the problem that the intensity of terahertz waves cannot be efficiently increased.
  • a terahertz wave output device includes a radiation layer that emits electromagnetic waves in the terahertz band, a reflective layer that is arranged behind the radiation layer and reflects the electromagnetic waves in the terahertz band, the radiation layer and the reflection layer. and an intermediate layer that is positioned between and transmits electromagnetic waves in the terahertz band.
  • a terahertz wave output method causes a radiation layer to radiate a first wave, which is an electromagnetic wave in the terahertz band, in front thereof, and radiates a second wave, which is an electromagnetic wave in the terahertz band, behind the radiation layer. and outputs a terahertz wave obtained by superimposing the reflected light obtained by forwardly reflecting the second wave and the first wave.
  • the intensity of terahertz waves is efficiently increased.
  • FIG. 1 is a perspective view showing a configuration example of a terahertz wave output device of this embodiment
  • FIG. 3 is a schematic diagram showing the action of the terahertz wave output device of the present embodiment
  • 3 is a perspective view showing a configuration example and action of a radiation layer 2.
  • FIG. 1 is a schematic diagram showing a configuration example of a terahertz wave output device according to an embodiment
  • FIG. 4 is a graph showing an example of a first wave from the emissive layer
  • FIG. It is a graph which shows an example of reflected light. It is a graph which shows the case where a 1st wave and a reflected wave are constructive.
  • FIG. 10 is a graph showing terahertz waves output when the first wave and the reflected wave construct each other; 5 is a graph showing the difference in output intensity between the terahertz wave output device according to the present embodiment and a comparative example;
  • 1 is a block diagram showing the configuration of a sensing device using a terahertz wave output device;
  • FIG. 4 is a perspective view showing another configuration example of the terahertz wave output device of the present embodiment;
  • FIG. 4 is a cross-sectional view showing another configuration of the terahertz wave output device of the present embodiment;
  • FIG. 4 is a cross-sectional view showing another configuration of the terahertz wave output device of the present embodiment;
  • FIG. 10 is a graph showing terahertz waves output when the first wave and the reflected wave construct each other;
  • 5 is a graph showing the difference in output intensity between the terahertz wave output device according to the present embodiment and a comparative example;
  • 1 is a block diagram
  • FIG. 4 is a cross-sectional view showing another configuration of the terahertz wave output device of the present embodiment;
  • FIG. 4 is a cross-sectional view showing another configuration of the emitting layer of the embodiment;
  • FIG. 4 is a cross-sectional view showing another configuration of the emitting layer of the embodiment;
  • FIG. 4 is a cross-sectional view showing another configuration of the emitting layer of the embodiment;
  • FIG. 1 is a perspective view showing a configuration example of the terahertz wave output device of this embodiment.
  • FIG. 2 is a schematic diagram showing the operation of the terahertz wave output device of this embodiment.
  • the terahertz wave output device 20 includes a radiation layer 2 that radiates electromagnetic waves in the terahertz band, a reflection layer 4 that is arranged behind the radiation layer 2 and reflects the electromagnetic waves in the terahertz band, An intermediate layer 3 is located between the emitting layer 2 and the reflecting layer 4 and transmits electromagnetic waves in the terahertz band.
  • a first wave WF which is an electromagnetic wave in the terahertz band
  • a second wave WS which is an electromagnetic wave in the terahertz band
  • the terahertz band is, for example, 0.05 to 50 [THz], and the output terahertz waves WT are electromagnetic waves in this frequency band. Forward means the direction in which the terahertz wave WT is output.
  • the radiation layer 2 may be the radiation section (electromagnetic wave generation section) 2
  • the intermediate layer 3 may be the intermediate section 3
  • the reflection layer 4 may be the reflection section 4 .
  • the radiation layer 2 emits a first wave WF in the terahertz band forward and a second wave WS in the terahertz band backward.
  • a terahertz wave WT generated by superimposing the WR and the first wave WF is output forward.
  • the intensity of the terahertz wave WT (output wave) can be increased. can.
  • FIG. 3 is a perspective view showing a configuration example and action of the radiation layer 2.
  • the radiation layer 2 has a first layer 11 which is a magnetic layer containing a magnetic metal and a second layer 12 which is a nonmagnetic layer containing a nonmagnetic metal. Also called emitter).
  • the first and second layers 11 and 12 are laminated so that the first layer 11 faces the front, but this is not the only option.
  • the first layer 11 may be laminated on the rear side.
  • the magnetic metal contained in the first layer 11 may be a ferromagnetic metal.
  • the first layer 11 may be composed of a single substance or a compound containing at least one of Fe (iron), Co (cobalt), Ni (nickel) and Gd (gadolinium). An example is Fe.
  • the first layer 11 may contain at least one of CoFeB and GdFe.
  • the thickness of the first layer 11 can be 1 to 20 [nm]. An example is 5 [nm].
  • the second layer 12 is at least one of Pt (platinum), Au (gold), Ru (ruthenium), Cu (copper), Ta (tantalum), Pd (lead), W (tungsten), and Al (aluminum). It may be composed of a single substance or a compound containing An example is Pt.
  • Pt platinum
  • Au gold
  • Ru ruthenium
  • Cu copper
  • Ta tantalum
  • Pd lead
  • W tungsten
  • Al aluminum
  • It may be composed of a single substance or a compound containing An example is Pt.
  • the thickness of the second layer 12 can be 1 to 20 [nm]. An example is 5 [nm].
  • the emitting layer 2 which is the STE, receives the excitation light LK and emits electromagnetic waves in the terahertz band.
  • the excitation light LK is, for example, discontinuous wave laser light (infrared pulse laser light) with a wavelength of about 800 nm.
  • FIG. 3 for example, when the emission layer 2 is irradiated with femtosecond pulsed laser light, spin polarization occurs at the interface between the first and second layers 11 and 12, and the first layer 11 and the second layer 12 A spin current Js flowing between the first and second layers 11 and 12 is converted into an actual current Jc flowing in a direction parallel to the interface of the first and second layers 11 and 12 (reverse spin Hall effect).
  • the emitting layer 2 which is STE, has multiple advantages such as high strength, large area, broadband, low cost, and high damage threshold.
  • the reflective layer 4 is a layer that reflects the second wave WS, which is an electromagnetic wave in the terahertz band, and can be made of, for example, a conductor or a dielectric.
  • An example of the conductor is indium tin oxide (ITO) with a thickness of 50 [nm] to 2.0 [ ⁇ m].
  • An example of the sheet resistance is 6 ⁇ /sq.
  • a light transmissive material such as ITO is preferred.
  • ITO indium zinc oxide
  • AgMg alloy light-transmitting metal ultrathin film
  • An insulating material having a large refractive index can be used as the dielectric.
  • the excitation light LK is incident on the emitting layer 2 from the front (described later), the light transmittance of the reflecting layer 4 does not matter.
  • the intermediate layer 3 is a layer that transmits electromagnetic waves in the terahertz band, and can be made of, for example, a dielectric.
  • a dielectric an inorganic insulator such as silicon oxide, silicon nitride, sapphire, etc. or an organic insulator such as resin having a thickness of about 1.0 to 500 [ ⁇ m] can be used.
  • One example is 10 to 100 ⁇ m glass (eg, microsheet glass) or transparent resin.
  • the intermediate layer 3 preferably has a smaller refractive index for electromagnetic waves in the terahertz band than the reflective layer 4 .
  • the intermediate layer 3 is a phase control layer that controls the phases of the second wave WS and the reflected wave WR. is set (detailed later).
  • the intermediate layer 3 may perform phase control to align the phases of the first wave WF and the reflected wave WR (that is, the first wave WF and the reflected wave WR are coherently combined to increase the electromagnetic wave intensity).
  • the intermediate layer 3 has optical transparency. , the optical transparency of the intermediate layer 3 does not matter.
  • the emitting layer 2, intermediate layer 3 and reflective layer 4 are laminated in this order.
  • the intermediate layer 3 may be sandwiched between the substrate on which the emissive layer 2 is deposited and the substrate on which the reflective layer 4 is deposited. Further, the substrate having the emissive layer 2 formed thereon may be disposed on the intermediate layer 3 having the reflective layer 4 formed thereon.
  • the emitting layer 2 may be deposited on one side of the intermediate layer 3 and the reflective layer 4 may be deposited on the other side.
  • FIG. 4 is a schematic diagram showing a configuration example of the terahertz wave output device of this embodiment. 1 and 2, the excitation light LK is irradiated from behind the terahertz wave output device 20, and the excitation light LK transmitted through the reflection layer 4 and the intermediate layer 3 is made incident on the emission layer 2 (second layer 12). but not limited to this. As shown in FIG. 4, the excitation light LK may be irradiated from the front of the terahertz wave output device 20 to directly enter the emission layer 2 (first layer 11).
  • FIG. 5 is a graph showing an example of the first wave from the emissive layer.
  • FIG. 6 is a graph showing an example of assumed reflected light.
  • a 3 [nm] Fe film as the first layer 11 a 3 [nm] Pt film as the second layer 12
  • a 500 [nm] ITO film as the reflective layer 4 a 30 [ ⁇ m] thickness as the intermediate layer 3.
  • sheet glass and the excitation light LK, which is femtosecond pulsed laser light (wavelength: 800 nm), is irradiated to the emitting layer 2 from behind.
  • the first wave WF is a pulse wave.
  • FIG. 1 is a pulse wave.
  • the amplitude of the reflected light WR is about 30% smaller than that of the first wave WF, and the pulse position (time axis) is delayed by 0.32 [picoseconds]. This corresponds to the fact that about 70% of the electromagnetic wave in the terahertz band is transmitted through the radiation layer 2 and the time required to make a round trip through the intermediate layer 3 is 0.32 [picoseconds].
  • the speed at which the terahertz-band electromagnetic wave travels through the intermediate layer 3 is the speed of light c/n (n is the refractive index of the intermediate layer with respect to the terahertz-band electromagnetic wave). It corresponds to the speed of light c ⁇ 0.32 ⁇ 10 ⁇ 12 /n.
  • the first wave WF and the reflected wave WR are coherently
  • the intermediate layer 3 may perform phase control such that the reflected wave WR that has passed through the intermediate layer 3 and the radiation layer 4 and the first wave WF are coherent, and the first wave WF and the reflected wave WR is a pulse wave, the pulse of the first wave WF and the pulse of the reflected wave WR are positively superimposed in front of the radiation layer 2 .
  • the product of the refractive index n of the intermediate layer 3 and the thickness d of the intermediate layer 3 with respect to the second wave WS is 1/4 wavelength ( ⁇ /4) or more of the second wave WS.
  • FIG. 7 is a graph showing a case where the first wave and the reflected wave are constructive.
  • FIG. 8 is a graph showing a terahertz wave output when the first wave and the reflected wave are constructive. 7 and 8, it can be seen that the amplitude AT of the output terahertz wave WT is approximately 1.4 times the amplitude AF of the first wave WF.
  • FIG. 9 is a graph showing the difference in output intensity between the terahertz wave output device according to this embodiment and the comparative example. As can be seen from FIG. 9, according to the terahertz wave output device 20, an output intensity about 2.4 times higher than that of the comparative example (output intensity in the case of only the radiation layer) can be obtained.
  • FIG. 10 is a block diagram showing the configuration of a sensing device using a terahertz wave output device.
  • the sensing device 70 includes the light source 10 of the excitation light LK, the terahertz wave output device 20, the detection device 30, and the imaging device 40 (optical photodiode, CMOS camera, etc.) and a display device 50 for displaying image data from the imaging device 40 .
  • the imaging device 40 optical photodiode, CMOS camera, etc.
  • the target TG is irradiated with the terahertz wave WT from the terahertz wave output device 20, and the terahertz wave transmitted through the target TG is input to the detection device 30, thereby displaying a perspective image of the target TG on the display device 50.
  • the terahertz wave output device 20 and the light source 10 of the excitation light LK can be integrated (as one device).
  • the magnetic field device for applying an external magnetic field to the radiation layer 2 and the terahertz wave output device 20 can be integrated (to form one device).
  • FIG. 11 is a perspective view showing another configuration example of the terahertz wave output device of this embodiment.
  • the radiation layer 2 in FIG. 11 includes a first layer 11 which is a magnetic layer containing a magnetic metal, a second layer 12 which is a nonmagnetic layer containing a nonmagnetic metal, and a third layer 12 which is a nonmagnetic layer containing a nonmagnetic metal.
  • the third layer 13 is located in front of the first layer 11 . That is, the third layer 13, the first layer 11, and the second layer 12 are laminated in this order.
  • the third layer 13 is at least one of Pt (platinum), Au (gold), Ru (ruthenium), Cu (copper), Ta (tantalum), Pd (lead), W (tungsten), and Al (aluminum). It may be composed of a single substance or a compound containing
  • FIG. 12 is a cross-sectional view showing another configuration of the terahertz wave output device of this embodiment.
  • the terahertz wave output device 20 may be configured by monolithically forming the radiation layer 2, the intermediate layer 3 and the reflection layer 4 on the substrate 6 in this order.
  • the substrate 6 is a glass substrate
  • the emitting layer 2 is STE
  • the intermediate layer 3 is a resin (for example, a coatable transparent resin)
  • the reflective layer 4 is a translucent conductive film (for example, ITO, IZO, etc.) or a high refractive index.
  • An insulating film can be used.
  • FIG. 13 is a cross-sectional view showing another configuration of the terahertz wave output device of this embodiment.
  • the emitting layer 2 may be formed on one surface of the intermediate layer 3 having a substrate function
  • the reflective layer 4 may be formed on the other surface of the intermediate layer 3 .
  • STE can be used as the emitting layer 2
  • glass or resin e.g., polyimide
  • a translucent conductive film e.g., ITO, IZO, etc.
  • a high refractive index insulating film can be used as the reflective layer 4.
  • FIG. 14 is a cross-sectional view showing another configuration of the terahertz wave output device of this embodiment.
  • a plano-convex lens 7 having a convex surface 7S and a flat surface 7F may be used as a substrate, and the emitting layer 2, the intermediate layer 3 and the reflective layer 4 may be monolithically formed on the flat surface 7F in this order.
  • An emissive layer 2 (STE) may be provided on the convex surface 7S.
  • FIG. 15 is a cross-sectional view showing another configuration of the radiation layer of this embodiment.
  • Emissive layer 2 is not limited to the STE described above.
  • a photoconductive antenna structure may be used for the radiation layer 2 .
  • the radiation layer 2 of the photoconductive antenna structure is electrically connected to the photoelectric layer (semiconductor layer) 14 formed on the substrate 8, the electrodes D1 and D2 formed on the photoelectric layer 14, and the electrode D1.
  • An antenna A1 in contact with the layer 14 and an antenna A2 electrically connected to the electrode D2 and in contact with the photoelectric layer 14 are provided. emits electromagnetic waves in the terahertz band.
  • the intermediate layer 3 can be provided on the side of the substrate 8 or on the opposite side of the substrate 8 .
  • Substrate 8 may be used as intermediate layer 3 .
  • the radiation layer 2 of the photoconductive antenna structure has the merits of high efficiency and wide band.
  • FIG. 16 is a cross-sectional view showing another configuration of the emitting layer of this embodiment.
  • a nonlinear optical crystal 16 may be used for the emitting layer 2, as shown in FIG.
  • a nonlinear optical crystal 16 such as LiNbO 3 (lithium niobate crystal) receives excitation light LK and emits electromagnetic waves in the terahertz band.
  • the intermediate layer 3 can be provided on one side or the other side of the nonlinear optical crystal 16 .
  • the emitting layer 2 using the nonlinear optical crystal 16 has advantages such as high coherence, high output, and broadband.
  • FIG. 17 is a cross-sectional view showing another configuration of the radiation layer of this embodiment.
  • a resonant tunneling diode (RTD) structure may be used for the emissive layer 2, as shown in FIG.
  • the radiation layer 2 of the RTD structure comprises an insulating layer 17 formed on the substrate 9 and a quantum well semiconductor layer 18 positioned in holes formed in the insulating layer 17.
  • a voltage is applied to the quantum well semiconductor layer 18. By doing so, it emits electromagnetic waves in the terahertz band.
  • a plurality of quantum well semiconductor layers 18 may be formed in an array.
  • the quantum well semiconductor layer 18 can be made of n-InP/n-InGaAs or InGaAs/InAlAs.
  • the intermediate layer 3 can be provided on the substrate 9 side or on the opposite side of the substrate 9 .
  • Substrate 9 may be used as intermediate layer 3 .
  • an RTD structure is used for the emitting layer 2, it is not necessary to irradiate excitation light.
  • the present disclosure includes the following aspects.
  • a terahertz wave output device includes a radiation layer that radiates electromagnetic waves in the terahertz band, a reflective layer that is disposed behind the radiation layer and reflects the electromagnetic waves in the terahertz band, and the radiation layer and the reflective layer. and an intermediate layer positioned therebetween and transmitting electromagnetic waves in the terahertz band.
  • the emitting layer emits a first terahertz wave forward and a second terahertz wave backward, A terahertz wave generated by superimposing a reflected wave generated by reflecting the second wave on the reflecting layer and the first wave is outputted forward.
  • the intermediate layer has insulating properties or has high permeability to terahertz waves.
  • the reflecting layer has a higher refractive index for electromagnetic waves in the terahertz band than the intermediate layer.
  • the product of the refractive index of the intermediate layer and the thickness of the intermediate layer with respect to the second wave is 1/4 wavelength or more of the second wave.
  • the reflected wave is out of phase with the first wave by approximately 0.9 ⁇ to 1.1 ⁇ .
  • the intermediate layer performs phase control such that the reflected wave and the first wave that have passed through the intermediate layer and the radiation layer are coherent. conduct.
  • At least one of the refractive index of the intermediate layer and the thickness of the intermediate layer with respect to the second wave is set according to the terahertz frequency to be output.
  • a terahertz wave output device is the terahertz wave output device according to any one of Aspects 1 to 8, wherein the radiation layer is a first layer that is a magnetic layer containing a magnetic metal, and a non-magnetic layer containing a non-magnetic metal. and a second layer in contact with the first layer, and the emitting layer is irradiated with discontinuous wave laser light.
  • the reflective layer and the intermediate layer have translucency, and the laser light is irradiated to the emitting layer from behind.
  • the reflective layer includes a conductive layer such as indium tin oxide (ITO) or indium zinc oxide (IZO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the intermediate layer is microsheet glass or microsheet plastic.
  • the first wave and the reflected wave are pulse waves, and the pulse of the first wave and the pulse of the reflected wave are in front of the radiation layer. are superimposed on each other.
  • a first wave which is an electromagnetic wave in the terahertz band
  • a second wave which is an electromagnetic wave in the terahertz band

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Abstract

A terahertz wave output apparatus (20) comprises: a radiation layer (2) that radiates electromagnetic waves of a terahertz band; a reflection layer (4) that is disposed behind the radiation layer to reflect the electromagnetic waves of the terahertz band; and an intermediate layer (3) which is positioned between the radiation layer and the reflection layer and is transmissive to the electromagnetic waves of the terahertz band. The terahertz wave output apparatus (20) causes the radiation layer to radiate a first wave (WF), which is an electromagnetic wave of the terahertz band, forwardly of the radiation layer, and to radiate a second wave (WS), which is an electromagnetic wave of the terahertz band, rearwardly of the radiation layer, the terahertz wave output apparatus (20) outputting a terahertz wave (WT) in which a reflection wave (WR) obtained by forward reflection of the second wave is superimposed with the first wave. In the terahertz wave output apparatus, the intensity of the terahertz wave (output wave) can be increased by setting the characteristics of the intermediate layer so that the reflection wave and the first wave are positively superimposed.

Description

テラヘルツ波出力装置およびテラヘルツ波出力方法Terahertz wave output device and terahertz wave output method
　本開示は、テラヘルツ波出力装置に関する。 The present disclosure relates to a terahertz wave output device.
　テラヘルツ波は、例えば第６世代移動通信システム（６Ｇ）での利用等、次世代の要素技術として期待されている。特許文献１には、２つのテラヘルツ波の照射領域を重ねることで強度を高める技術が開示されている。 Terahertz waves are expected to be a next-generation elemental technology, such as for use in the 6th generation mobile communication system (6G). Patent Literature 1 discloses a technique for increasing the intensity by overlapping the irradiation regions of two terahertz waves.
日本国公開特許公報「特開２０２２－８８９号」公報Japanese Patent Publication "JP 2022-889"
　特許文献１に開示の技術は、テラヘルツ波の強度を効率的に高められないという問題がある。 The technology disclosed in Patent Document 1 has the problem that the intensity of terahertz waves cannot be efficiently increased.
　本開示の一態様に係るテラヘルツ波出力装置は、テラヘルツ帯の電磁波を放射する放射層と、前記放射層の後方に配され、テラヘルツ帯の電磁波を反射する反射層と、前記放射層および反射層の間に位置し、テラヘルツ帯の電磁波を透過させる中間層とを備える。 A terahertz wave output device according to an aspect of the present disclosure includes a radiation layer that emits electromagnetic waves in the terahertz band, a reflective layer that is arranged behind the radiation layer and reflects the electromagnetic waves in the terahertz band, the radiation layer and the reflection layer. and an intermediate layer that is positioned between and transmits electromagnetic waves in the terahertz band.
　本開示の一態様に係るテラヘルツ波出力方法は、放射層からその前方にテラヘルツ帯の電磁波である第１波を放射させるとともに、前記放射層の後方にテラヘルツ帯の電磁波である第２波を放射させ、前記第２波を前方反射させた反射光と前記第１波とを重ね合わせたテラヘルツ波を出力する。 A terahertz wave output method according to an aspect of the present disclosure causes a radiation layer to radiate a first wave, which is an electromagnetic wave in the terahertz band, in front thereof, and radiates a second wave, which is an electromagnetic wave in the terahertz band, behind the radiation layer. and outputs a terahertz wave obtained by superimposing the reflected light obtained by forwardly reflecting the second wave and the first wave.
　本開示の一態様によれば、テラヘルツ波の強度が効率的に高められる。 According to one aspect of the present disclosure, the intensity of terahertz waves is efficiently increased.
本実施形態のテラヘルツ波出力装置の構成例を示す斜視図である。1 is a perspective view showing a configuration example of a terahertz wave output device of this embodiment; FIG. 本実施形態のテラヘルツ波出力装置の作用を示す模式図である。FIG. 3 is a schematic diagram showing the action of the terahertz wave output device of the present embodiment; 放射層２の構成例および作用を示す斜視図である。3 is a perspective view showing a configuration example and action of a radiation layer 2. FIG. 本実施形態のテラヘルツ波出力装置の構成例を示す模式図である。1 is a schematic diagram showing a configuration example of a terahertz wave output device according to an embodiment; FIG. 放射層からの第１波の一例を示すグラフである。FIG. 4 is a graph showing an example of a first wave from the emissive layer; FIG. 反射光の一例を示すグラフである。It is a graph which shows an example of reflected light. 第１波および反射波が強め合う場合を示すグラフである。It is a graph which shows the case where a 1st wave and a reflected wave are constructive. 第１波および反射波が強め合う場合に出力されるテラヘルツ波を示すグラフである。10 is a graph showing terahertz waves output when the first wave and the reflected wave construct each other; 本実施形態に係るテラヘルツ波出力装置と比較例との出力強度の差異を示すグラフである。5 is a graph showing the difference in output intensity between the terahertz wave output device according to the present embodiment and a comparative example; テラヘルツ波出力装置を用いたセンシング装置の構成を示すブロック図である。1 is a block diagram showing the configuration of a sensing device using a terahertz wave output device; FIG. 本実施形態のテラヘルツ波出力装置の別構成例を示す斜視図である。FIG. 4 is a perspective view showing another configuration example of the terahertz wave output device of the present embodiment; 本実施形態のテラヘルツ波出力装置の別構成を示す断面図である。FIG. 4 is a cross-sectional view showing another configuration of the terahertz wave output device of the present embodiment; 本実施形態のテラヘルツ波出力装置の別構成を示す断面図である。FIG. 4 is a cross-sectional view showing another configuration of the terahertz wave output device of the present embodiment; 本実施形態のテラヘルツ波出力装置の別構成を示す断面図である。FIG. 4 is a cross-sectional view showing another configuration of the terahertz wave output device of the present embodiment; 本実施形態の放射層の別構成を示す断面図である。FIG. 4 is a cross-sectional view showing another configuration of the emitting layer of the embodiment; 本実施形態の放射層の別構成を示す断面図である。FIG. 4 is a cross-sectional view showing another configuration of the emitting layer of the embodiment; 本実施形態の放射層の別構成を示す断面図である。FIG. 4 is a cross-sectional view showing another configuration of the emitting layer of the embodiment;
　図１は、本実施形態のテラヘルツ波出力装置の構成例を示す斜視図である。図２は、本実施形態のテラヘルツ波出力装置の作用を示す模式図である。図１および図２に示すように、テラヘルツ波出力装置２０は、テラヘルツ帯の電磁波を放射する放射層２と、放射層２の後方に配され、テラヘルツ帯の電磁波を反射する反射層４と、放射層２および反射層４の間に位置し、テラヘルツ帯の電磁波を透過させる中間層３とを備える。 FIG. 1 is a perspective view showing a configuration example of the terahertz wave output device of this embodiment. FIG. 2 is a schematic diagram showing the operation of the terahertz wave output device of this embodiment. As shown in FIGS. 1 and 2, the terahertz wave output device 20 includes a radiation layer 2 that radiates electromagnetic waves in the terahertz band, a reflection layer 4 that is arranged behind the radiation layer 2 and reflects the electromagnetic waves in the terahertz band, An intermediate layer 3 is located between the emitting layer 2 and the reflecting layer 4 and transmits electromagnetic waves in the terahertz band.
　本実施形態のテラヘルツ波出力方法は、放射層２からその前方にテラヘルツ帯の電磁波である第１波ＷＦを放射させるとともに、前記放射層の後方にテラヘルツ帯の電磁波である第２波ＷＳを放射させ、第２波を前方反射させた反射光ＷＲと第１波ＷＦとを重ね合わせたテラヘルツ波ＷＴを出力する。 In the terahertz wave output method of the present embodiment, a first wave WF, which is an electromagnetic wave in the terahertz band, is radiated forward from the radiation layer 2, and a second wave WS, which is an electromagnetic wave in the terahertz band, is radiated behind the radiation layer. and outputs a terahertz wave WT obtained by superimposing the reflected light WR, which is the second wave forward-reflected, and the first wave WF.
　テラヘルツ帯とは、例えば、０．０５～５０〔ＴＨｚ〕であり、出力されるテラヘルツ波ＷＴは、この周波数帯の電磁波である。前方とは、テラヘルツ波ＷＴが出力される向きを意味する。放射層２は放射部（電磁波生成部）２であってもよく、中間層３が中間部３であってもよく、反射層４が反射部４であってもよい。 The terahertz band is, for example, 0.05 to 50 [THz], and the output terahertz waves WT are electromagnetic waves in this frequency band. Forward means the direction in which the terahertz wave WT is output. The radiation layer 2 may be the radiation section (electromagnetic wave generation section) 2 , the intermediate layer 3 may be the intermediate section 3 , and the reflection layer 4 may be the reflection section 4 .
　放射層２は、前方に向けてテラヘルツ帯の第１波ＷＦを放射し、後方に向けてテラヘルツ帯の第２波ＷＳを放射し、第２波ＷＳが反射層４で反射されて生じる反射波ＷＲと、第１波ＷＦとが重ね合わされて生じるテラヘルツ波ＷＴを前方に出力する。テラヘルツ波出力装置２０においては、例えば、反射波ＷＲおよび第１波ＷＦがポジティブに重ね合わされるように中間層３の特性を設定することで、テラヘルツ波ＷＴ（出力波）の強度を高めることができる。 The radiation layer 2 emits a first wave WF in the terahertz band forward and a second wave WS in the terahertz band backward. A terahertz wave WT generated by superimposing the WR and the first wave WF is output forward. In the terahertz wave output device 20, for example, by setting the characteristics of the intermediate layer 3 so that the reflected wave WR and the first wave WF are positively superimposed, the intensity of the terahertz wave WT (output wave) can be increased. can.
　（放射層）
　図３は、放射層２の構成例および作用を示す斜視図である。図３に示すように、放射層２は、磁性金属を含む磁性層である第１層１１と、非磁性金属を含む非磁性層である第２層１２とを有し、ＳＴＥ（スピントロニックテラヘルツエミッタ）とも呼ばれる。第１および第２層１１・１２は、第１層１１が前方となるように積層されているが、これに限定されない。第１層１１が後方となるように積層されていてもよい。 (emissive layer)
FIG. 3 is a perspective view showing a configuration example and action of the radiation layer 2. As shown in FIG. As shown in FIG. 3, the radiation layer 2 has a first layer 11 which is a magnetic layer containing a magnetic metal and a second layer 12 which is a nonmagnetic layer containing a nonmagnetic metal. Also called emitter). The first and second layers 11 and 12 are laminated so that the first layer 11 faces the front, but this is not the only option. The first layer 11 may be laminated on the rear side.
　第１層１１に含まれる磁性金属は強磁性金属であってもよい。第１層１１は、Ｆｅ（鉄）、Ｃｏ（コバルト）、Ｎｉ（ニッケル）およびＧｄ（ガドリニウム）の少なくとも１つを含む単体あるいは化合物で構成されていてもよい。一例としては、Ｆｅである。第１層１１が、ＣｏＦｅＢおよびＧｄＦｅの少なくとも１つを含んでいてもよい。第１層１１の厚みは、１～２０〔ｎｍ〕とすることができる。一例としては、５〔ｎｍ〕である。 The magnetic metal contained in the first layer 11 may be a ferromagnetic metal. The first layer 11 may be composed of a single substance or a compound containing at least one of Fe (iron), Co (cobalt), Ni (nickel) and Gd (gadolinium). An example is Fe. The first layer 11 may contain at least one of CoFeB and GdFe. The thickness of the first layer 11 can be 1 to 20 [nm]. An example is 5 [nm].
　第２層１２は、Ｐｔ（白金）、Ａｕ（金）、Ｒｕ（ルテニウム）、Ｃｕ（銅）、Ｔａ（タンタル）、Ｐｄ（鉛）、Ｗ（タングステン）、およびＡｌ（アルミニウム）の少なくとも１つを含む単体あるいは化合物で構成されていてもよい。一例としては、Ｐｔである。第２層１２を構成する非磁性金属として、スピン軌道相互作用の大きな金属を用いることができる。第２層１２の厚みは、１～２０〔ｎｍ〕とすることができる。一例としては、５〔ｎｍ〕である。 The second layer 12 is at least one of Pt (platinum), Au (gold), Ru (ruthenium), Cu (copper), Ta (tantalum), Pd (lead), W (tungsten), and Al (aluminum). It may be composed of a single substance or a compound containing An example is Pt. As the non-magnetic metal forming the second layer 12, a metal having a large spin-orbit interaction can be used. The thickness of the second layer 12 can be 1 to 20 [nm]. An example is 5 [nm].
　ＳＴＥである放射層２は、励起光ＬＫを受けてテラヘルツ帯の電磁波を放射する。励起光ＬＫは、例えば、波長８００ｎｍ程度の非連続発振レーザ光（赤外パルスレーザ光）である。図３のように、例えばフェムト秒パルスレーザ光が放射層２に照射されると、第１および第２層１１・１２の界面にスピン偏極が発現し、第１層１１および第２層１２間を流れるスピン流Ｊｓが、第１および第２層１１・１２の界面と平行な方向に流れる実電流Ｊｃに変換される（逆スピンホール効果）。これにより、実電流Ｊｃに相当するテラヘルツ帯の電磁波が第１および第２層１１・１２の界面と交差する方向に放射される。第１層１１に外部磁場を印加してもよい。ＳＴＥである放射層２は、高強度、大面積、広帯域、安価、高いダメージ閾値等の複数のメリットをもち合わせている。 The emitting layer 2, which is the STE, receives the excitation light LK and emits electromagnetic waves in the terahertz band. The excitation light LK is, for example, discontinuous wave laser light (infrared pulse laser light) with a wavelength of about 800 nm. As shown in FIG. 3, for example, when the emission layer 2 is irradiated with femtosecond pulsed laser light, spin polarization occurs at the interface between the first and second layers 11 and 12, and the first layer 11 and the second layer 12 A spin current Js flowing between the first and second layers 11 and 12 is converted into an actual current Jc flowing in a direction parallel to the interface of the first and second layers 11 and 12 (reverse spin Hall effect). As a result, a terahertz-band electromagnetic wave corresponding to the actual current Jc is radiated in a direction intersecting the interface between the first and second layers 11 and 12 . An external magnetic field may be applied to the first layer 11 . The emitting layer 2, which is STE, has multiple advantages such as high strength, large area, broadband, low cost, and high damage threshold.
　（反射層）
　反射層４は、テラヘルツ帯の電磁波である第２波ＷＳを反射する層であり、例えば、導電体あるいは誘電体で構成することができる。導電体の一例としては、厚み５０〔ｎｍ〕～２．０〔μｍ〕のインジウムスズ酸化物（ＩＴＯ）である。シート抵抗の一例としては６Ω／ｓｑである。図２のように励起光ＬＫを後方から放射層２に入射させる場合には、ＩＴＯのような光透過性材料が好ましい。ＩＴＯ以外にも、インジウム亜鉛酸化物（ＩＺＯ）、ＡｇＭｇ合金（光透過性のある金属極薄膜）等を用いてもよい。誘電体としては屈折率の大きな絶縁材を用いることができる。なお、励起光ＬＫを前方から放射層２に入射させる場合（後述）には、反射層４の光透過性は問わない。 (reflective layer)
The reflective layer 4 is a layer that reflects the second wave WS, which is an electromagnetic wave in the terahertz band, and can be made of, for example, a conductor or a dielectric. An example of the conductor is indium tin oxide (ITO) with a thickness of 50 [nm] to 2.0 [μm]. An example of the sheet resistance is 6Ω/sq. When the excitation light LK is incident on the emissive layer 2 from behind as shown in FIG. 2, a light transmissive material such as ITO is preferred. Other than ITO, indium zinc oxide (IZO), AgMg alloy (light-transmitting metal ultrathin film), or the like may be used. An insulating material having a large refractive index can be used as the dielectric. In addition, when the excitation light LK is incident on the emitting layer 2 from the front (described later), the light transmittance of the reflecting layer 4 does not matter.
　（中間層）
　中間層３は、テラヘルツ帯の電磁波を透過させる層であり、例えば、誘電体で構成することができる。誘電体として、厚み１．０～５００〔μｍ〕程度の、酸化珪素、窒化珪素、サファイア等の無機絶縁体あるいは樹脂等の有機絶縁体を用いることができる。一例としては、１０～１００μｍのガラス（例えば、マイクロシートガラス）あるいは透明樹脂である。中間層３は、反射層４と比較して、テラヘルツ帯の電磁波の屈折率を小さくすることが望ましい。中間層３は、第２波ＷＳおよび反射波ＷＲの位相を制御する位相制御層であり、テラヘルツ波ＷＴの所望の（出力すべき）周波数に応じて（テラヘルツ帯の電磁波の）屈折率および厚みの少なくとも一方が設定される（後に詳述）。中間層３が、第１波ＷＦおよび反射波ＷＲの位相を揃える（すなわち、第１波ＷＦおよび反射波ＷＲがコヒーレントに結合され電磁波強度が増強となる）位相制御を行ってもよい。図２のように励起光ＬＫを後方から放射層２に入射させる場合は、中間層３が光透過性を有することが望ましいが、励起光ＬＫを前方から放射層２に入射させる場合（後述）には、中間層３の光透過性は問わない。 (middle layer)
The intermediate layer 3 is a layer that transmits electromagnetic waves in the terahertz band, and can be made of, for example, a dielectric. As the dielectric, an inorganic insulator such as silicon oxide, silicon nitride, sapphire, etc. or an organic insulator such as resin having a thickness of about 1.0 to 500 [μm] can be used. One example is 10 to 100 μm glass (eg, microsheet glass) or transparent resin. The intermediate layer 3 preferably has a smaller refractive index for electromagnetic waves in the terahertz band than the reflective layer 4 . The intermediate layer 3 is a phase control layer that controls the phases of the second wave WS and the reflected wave WR. is set (detailed later). The intermediate layer 3 may perform phase control to align the phases of the first wave WF and the reflected wave WR (that is, the first wave WF and the reflected wave WR are coherently combined to increase the electromagnetic wave intensity). When the excitation light LK is incident on the emitting layer 2 from behind as shown in FIG. 2, it is desirable that the intermediate layer 3 has optical transparency. , the optical transparency of the intermediate layer 3 does not matter.
　放射層２、中間層３および反射層４はこの順に積層される。中間層３は、放射層２が成膜された基板と、反射層４が成膜された基板との間に挟持されていてもよい。また、反射層４が成膜された中間層３の上に、放射層２が成膜された基板を配してもよい。中間層３の一方の面に放射層２を成膜し、他方の面に反射層４を成膜してもよい。 The emitting layer 2, intermediate layer 3 and reflective layer 4 are laminated in this order. The intermediate layer 3 may be sandwiched between the substrate on which the emissive layer 2 is deposited and the substrate on which the reflective layer 4 is deposited. Further, the substrate having the emissive layer 2 formed thereon may be disposed on the intermediate layer 3 having the reflective layer 4 formed thereon. The emitting layer 2 may be deposited on one side of the intermediate layer 3 and the reflective layer 4 may be deposited on the other side.
　図４は、本実施形態のテラヘルツ波出力装置の構成例を示す模式図である。図１および図２では、テラヘルツ波出力装置２０の後方から励起光ＬＫを照射し、反射層４および中間層３を透過した励起光ＬＫを放射層２（第２層１２）に入射させているが、これに限定されない。図４に示すように、テラヘルツ波出力装置２０の前方から励起光ＬＫを照射し、励起光ＬＫを直接放射層２（第１層１１）に入射させてもよい。 FIG. 4 is a schematic diagram showing a configuration example of the terahertz wave output device of this embodiment. 1 and 2, the excitation light LK is irradiated from behind the terahertz wave output device 20, and the excitation light LK transmitted through the reflection layer 4 and the intermediate layer 3 is made incident on the emission layer 2 (second layer 12). but not limited to this. As shown in FIG. 4, the excitation light LK may be irradiated from the front of the terahertz wave output device 20 to directly enter the emission layer 2 (first layer 11).
　（第１および第２波の重畳）
　図５は、放射層からの第１波の一例を示すグラフである。図６は、想定される反射光の一例を示すグラフである。ここでは、第１層１１として３〔ｎｍ〕のＦｅ膜、第２層１２として３〔ｎｍ〕のＰｔ膜、反射層４として５００〔ｎｍ〕のＩＴＯ膜、中間層３として厚み３０〔μｍ〕のシートガラスを用い、フェムト秒パルスレーザ光（波長：８００ｎｍ）である励起光ＬＫを、後方から放射層２に照射している。図５では、第１波ＷＦはパルス波である。図６では、反射光ＷＲは、第１波ＷＦに対して、振幅が３０％程度小さくなり、パルス位置（時間軸）が０．３２〔ピコ秒〕遅れるものと想定される。これは、テラヘルツ帯の電磁波が放射層２を約７０％透過し、中間層３を往復するのに要する時間が０．３２〔ピコ秒〕であることに相当する。 (Superposition of first and second waves)
FIG. 5 is a graph showing an example of the first wave from the emissive layer. FIG. 6 is a graph showing an example of assumed reflected light. Here, a 3 [nm] Fe film as the first layer 11, a 3 [nm] Pt film as the second layer 12, a 500 [nm] ITO film as the reflective layer 4, and a 30 [μm] thickness as the intermediate layer 3. sheet glass, and the excitation light LK, which is femtosecond pulsed laser light (wavelength: 800 nm), is irradiated to the emitting layer 2 from behind. In FIG. 5, the first wave WF is a pulse wave. In FIG. 6, it is assumed that the amplitude of the reflected light WR is about 30% smaller than that of the first wave WF, and the pulse position (time axis) is delayed by 0.32 [picoseconds]. This corresponds to the fact that about 70% of the electromagnetic wave in the terahertz band is transmitted through the radiation layer 2 and the time required to make a round trip through the intermediate layer 3 is 0.32 [picoseconds].
　テラヘルツ帯の電磁波が中間層３を進む速さは、光速ｃ／ｎ（ｎは、テラヘルツ帯の電磁波に対する中間層の屈折率）であるから、中間層３の厚みをｄとすれば、２ｄ＝光速ｃ×０．３２×１０－１２／ｎに対応する。ここで、固定端反射によって第１波ＷＦおよび反射波ＷＲの位相が０．９π～１．１π（例えば、実質的にπ）ずれることを考慮すると、第１波ＷＦおよび反射波ＷＲがコヒーレントに強め合う条件は、第１および第２波ＷＦ・ＷＳ並びに反射波ＷＲの周波数をｆ、これらの波長をλ（＝光速ｃ／ｆ）、Ｎを自然数として、２ｎｄ＝（Ｎ＋１／２）λとなる。Ｎ＝０とすれば、ｆ＝１．５６〔ＴＨｚ〕であるから、この場合のテラヘルツ波出力装置２０は、１．５６〔ＴＨｚ〕のテラヘルツ波を出力するのに好適である。なお、第１波ＷＦおよび反射波ＷＲが弱め合う条件は、２ｎｄ＝Ｎλであるから、Ｎ＝１とすれば、ｆ＝３．１３〔ＴＨｚ〕である。テラヘルツ波（出力波）の周波数に応じて中間層３の厚みを設定することで、第１波ＷＦおよび反射波ＷＲをポジティブに重ね合わせることができる。 The speed at which the terahertz-band electromagnetic wave travels through the intermediate layer 3 is the speed of light c/n (n is the refractive index of the intermediate layer with respect to the terahertz-band electromagnetic wave). It corresponds to the speed of light c×0.32×10 −12 /n. Here, considering that the phases of the first wave WF and the reflected wave WR are shifted by 0.9π to 1.1π (for example, substantially π) due to reflection at the fixed end, the first wave WF and the reflected wave WR are coherently The constructive condition is that f is the frequency of the first and second waves WF/WS and the reflected wave WR, λ is the wavelength of these waves (=light speed c/f), and 2nd=(N+1/2)λ, where N is a natural number. Become. If N=0, f=1.56 [THz], so the terahertz wave output device 20 in this case is suitable for outputting 1.56 [THz] terahertz waves. The condition that the first wave WF and the reflected wave WR weaken each other is 2nd=Nλ, so if N=1, then f=3.13 [THz]. By setting the thickness of the intermediate layer 3 according to the frequency of the terahertz wave (output wave), the first wave WF and the reflected wave WR can be positively superimposed.
　このように、中間層３は、中間層３および放射層４を通過した反射波ＷＲと第１波ＷＦとがコヒーレントとなるような位相制御を行ってもよく、第１波ＷＦおよび反射波ＷＲがパルス波である場合は、第１波ＷＦのパルスと反射波ＷＲのパルスとが放射層２の前方でポジティブに重ね合わされる。第２波ＷＳに対する中間層３の屈折率ｎと中間層３の厚みｄとの積は、第２波ＷＳの１／４波長（λ／４）以上となる。 In this manner, the intermediate layer 3 may perform phase control such that the reflected wave WR that has passed through the intermediate layer 3 and the radiation layer 4 and the first wave WF are coherent, and the first wave WF and the reflected wave WR is a pulse wave, the pulse of the first wave WF and the pulse of the reflected wave WR are positively superimposed in front of the radiation layer 2 . The product of the refractive index n of the intermediate layer 3 and the thickness d of the intermediate layer 3 with respect to the second wave WS is 1/4 wavelength (λ/4) or more of the second wave WS.
　（本実施形態の効果）
　図７は、第１波および反射波が強め合う場合を示すグラフである。図８は、第１波および反射波が強め合う場合に出力されるテラヘルツ波を示すグラフである。図７および図８によれば、第１波ＷＦの振幅ＡＦに対して出力されるテラヘルツ波ＷＴの振幅ＡＴが１．４倍程度になっていることがわかる。図９は、本実施形態に係るテラヘルツ波出力装置と比較例との出力強度の差異を示すグラフである。図９から、テラヘルツ波出力装置２０によれば、比較例（放射層のみの場合の出力強度）に対して２．４倍程度の出力強度が得られることがわかる。 (Effect of this embodiment)
FIG. 7 is a graph showing a case where the first wave and the reflected wave are constructive. FIG. 8 is a graph showing a terahertz wave output when the first wave and the reflected wave are constructive. 7 and 8, it can be seen that the amplitude AT of the output terahertz wave WT is approximately 1.4 times the amplitude AF of the first wave WF. FIG. 9 is a graph showing the difference in output intensity between the terahertz wave output device according to this embodiment and the comparative example. As can be seen from FIG. 9, according to the terahertz wave output device 20, an output intensity about 2.4 times higher than that of the comparative example (output intensity in the case of only the radiation layer) can be obtained.
　（適用例および変形例）
　図１０は、テラヘルツ波出力装置を用いたセンシング装置の構成を示すブロック図である。図１０に示すように、センシング装置７０は、励起光ＬＫの光源１０と、テラヘルツ波出力装置２０と、検出装置３０と、検出装置３０からの光出力を感知する撮像装置４０（光フォトダイオード、ＣＭＯＳカメラ等）と、撮像装置４０からの映像データを表示する表示装置５０とを含む。センシング装置７０では、テラヘルツ波出力装置２０からのテラヘルツ波ＷＴをターゲットＴＧに照射し、ターゲットＴＧを透過したテラヘルツ波を検出装置３０に入力することで、表示装置５０にターゲットＴＧの透視イメージが表示される。テラヘルツ波出力装置２０と励起光ＬＫの光源１０とを一体化する（１つの装置とする）こともできる。また、放射層２に外部磁場を印加する磁場装置とテラヘルツ波出力装置２０とを一体化する（１つの装置とする）こともできる。 (Example of application and modification)
FIG. 10 is a block diagram showing the configuration of a sensing device using a terahertz wave output device. As shown in FIG. 10, the sensing device 70 includes the light source 10 of the excitation light LK, the terahertz wave output device 20, the detection device 30, and the imaging device 40 (optical photodiode, CMOS camera, etc.) and a display device 50 for displaying image data from the imaging device 40 . In the sensing device 70, the target TG is irradiated with the terahertz wave WT from the terahertz wave output device 20, and the terahertz wave transmitted through the target TG is input to the detection device 30, thereby displaying a perspective image of the target TG on the display device 50. be done. The terahertz wave output device 20 and the light source 10 of the excitation light LK can be integrated (as one device). Also, the magnetic field device for applying an external magnetic field to the radiation layer 2 and the terahertz wave output device 20 can be integrated (to form one device).
　図１１は、本実施形態のテラヘルツ波出力装置の別構成例を示す斜視図である。図１１の放射層２は、磁性金属を含む磁性層である第１層１１と、非磁性金属を含む非磁性層である第２層１２と、非磁性金属を含む非磁性層である第３層１３とを有し、第３層１３は、第１層１１よりも前方に位置している。すなわち、第３層１３、第１層１１、第２層１２の順に積層されている。こうすれば、第３層１３および第１層１１の界面と、第２層１２および第１層１１の界面とでテラヘルツ帯の電磁波が放射されるため、テラヘルツ波出力装置の出力（テラヘルツ波の強度）をより高めることができる。第３層１３は、Ｐｔ（白金）、Ａｕ（金）、Ｒｕ（ルテニウム）、Ｃｕ（銅）、Ｔａ（タンタル）、Ｐｄ（鉛）、Ｗ（タングステン）、およびＡｌ（アルミニウム）の少なくとも１つを含む単体あるいは化合物で構成されていてもよい。 FIG. 11 is a perspective view showing another configuration example of the terahertz wave output device of this embodiment. The radiation layer 2 in FIG. 11 includes a first layer 11 which is a magnetic layer containing a magnetic metal, a second layer 12 which is a nonmagnetic layer containing a nonmagnetic metal, and a third layer 12 which is a nonmagnetic layer containing a nonmagnetic metal. The third layer 13 is located in front of the first layer 11 . That is, the third layer 13, the first layer 11, and the second layer 12 are laminated in this order. In this way, terahertz-band electromagnetic waves are radiated from the interface between the third layer 13 and the first layer 11 and the interface between the second layer 12 and the first layer 11, so that the output of the terahertz wave output device (the terahertz wave strength) can be further increased. The third layer 13 is at least one of Pt (platinum), Au (gold), Ru (ruthenium), Cu (copper), Ta (tantalum), Pd (lead), W (tungsten), and Al (aluminum). It may be composed of a single substance or a compound containing
　図１２は、本実施形態のテラヘルツ波出力装置の別構成を示す断面図である。図１２に示すように、基板６上に、放射層２、中間層３および反射層４をこの順にモノリシックに形成し、テラヘルツ波出力装置２０を構成してもよい。例えば、基板６にガラス基板、放射層２としてＳＴＥ、中間層３として樹脂（例えば、塗布可能な透明樹脂）、反射層４に透光性導電膜（例えば、ＩＴＯ、ＩＺＯ等）あるいは高屈折率絶縁膜を用いることができる。 FIG. 12 is a cross-sectional view showing another configuration of the terahertz wave output device of this embodiment. As shown in FIG. 12, the terahertz wave output device 20 may be configured by monolithically forming the radiation layer 2, the intermediate layer 3 and the reflection layer 4 on the substrate 6 in this order. For example, the substrate 6 is a glass substrate, the emitting layer 2 is STE, the intermediate layer 3 is a resin (for example, a coatable transparent resin), and the reflective layer 4 is a translucent conductive film (for example, ITO, IZO, etc.) or a high refractive index. An insulating film can be used.
　図１３は、本実施形態のテラヘルツ波出力装置の別構成を示す断面図である。図１３に示すように、基板機能をもつ中間層３の一方の面に放射層２を形成し、中間層３の他方の面に反射層４を形成してもよい。例えば、放射層２としてＳＴＥ、基板を兼ねる中間層３としてガラスあるいは樹脂（例えば、ポリイミド）、反射層４に透光性導電膜（例えば、ＩＴＯ、ＩＺＯ等）あるいは高屈折率絶縁膜を用いることができる。 FIG. 13 is a cross-sectional view showing another configuration of the terahertz wave output device of this embodiment. As shown in FIG. 13, the emitting layer 2 may be formed on one surface of the intermediate layer 3 having a substrate function, and the reflective layer 4 may be formed on the other surface of the intermediate layer 3 . For example, STE can be used as the emitting layer 2, glass or resin (e.g., polyimide) can be used as the intermediate layer 3 which also serves as a substrate, and a translucent conductive film (e.g., ITO, IZO, etc.) or a high refractive index insulating film can be used as the reflective layer 4. can be done.
　図１４は、本実施形態のテラヘルツ波出力装置の別構成を示す断面図である。図１４に示すように、凸面７Ｓおよび平面７Ｆを有する平凸レンズ７を基板とし、平面７Ｆ上に、放射層２、中間層３および反射層４をこの順にモノリシックに形成してもよい。こうすれば、平凸レンズ７によって収束されたテラヘルツ波を得ることができる。凸面７Ｓ上に放射層２（ＳＴＥ）を設けてもよい。 FIG. 14 is a cross-sectional view showing another configuration of the terahertz wave output device of this embodiment. As shown in FIG. 14, a plano-convex lens 7 having a convex surface 7S and a flat surface 7F may be used as a substrate, and the emitting layer 2, the intermediate layer 3 and the reflective layer 4 may be monolithically formed on the flat surface 7F in this order. In this way, terahertz waves converged by the plano-convex lens 7 can be obtained. An emissive layer 2 (STE) may be provided on the convex surface 7S.
　図１５は、本実施形態の放射層の別構成を示す断面図である。放射層２は上述のＳＴＥに限定されない。図１５に示すように、放射層２に光伝導アンテナ構造を用いてもよい。光伝導アンテナ構造の放射層２は、基板８上に形成される光電層（半導体層）１４と、光電層１４上に形成された電極Ｄ１・Ｄ２と、電極Ｄ１と電気的に接続され、光電層１４に接するアンテナＡ１と、電極Ｄ２と電気的に接続され、光電層１４に接するアンテナＡ２とを備え、対向するアンテナＡ１・Ａ２の間隙に励起光ＬＫ（例えば、パルスレーザ光）を受けることで、テラヘルツ帯の電磁波を放射する。中間層３は、基板８側あるいは基板８の反対側に設けることができる。基板８を中間層３として用いてもよい。光伝導アンテナ構造の放射層２は、高効率、広帯域といったメリットがある。 FIG. 15 is a cross-sectional view showing another configuration of the radiation layer of this embodiment. Emissive layer 2 is not limited to the STE described above. As shown in FIG. 15, a photoconductive antenna structure may be used for the radiation layer 2 . The radiation layer 2 of the photoconductive antenna structure is electrically connected to the photoelectric layer (semiconductor layer) 14 formed on the substrate 8, the electrodes D1 and D2 formed on the photoelectric layer 14, and the electrode D1. An antenna A1 in contact with the layer 14 and an antenna A2 electrically connected to the electrode D2 and in contact with the photoelectric layer 14 are provided. emits electromagnetic waves in the terahertz band. The intermediate layer 3 can be provided on the side of the substrate 8 or on the opposite side of the substrate 8 . Substrate 8 may be used as intermediate layer 3 . The radiation layer 2 of the photoconductive antenna structure has the merits of high efficiency and wide band.
　図１６は、本実施形態の放射層の別構成を示す断面図である。図１６に示すように、放射層２に非線形光学結晶１６を用いてもよい。ＬｉＮｂＯ３（ニオブ酸リチウム結晶）等の非線形光学結晶１６は、励起光ＬＫを受けてテラヘルツ帯の電磁波を放射する。中間層３は、非線形光学結晶１６の一方の側あるいは他方の側に設けることができる。非線形光学結晶１６を用いた放射層２は、高コヒーレンス、高出力、広帯域といったメリットがある。 FIG. 16 is a cross-sectional view showing another configuration of the emitting layer of this embodiment. A nonlinear optical crystal 16 may be used for the emitting layer 2, as shown in FIG. A nonlinear optical crystal 16 such as LiNbO 3 (lithium niobate crystal) receives excitation light LK and emits electromagnetic waves in the terahertz band. The intermediate layer 3 can be provided on one side or the other side of the nonlinear optical crystal 16 . The emitting layer 2 using the nonlinear optical crystal 16 has advantages such as high coherence, high output, and broadband.
　図１７は、本実施形態の放射層の別構成を示す断面図である。図１７に示すように、放射層２に共鳴トンネルダイオード（ＲＴＤ）構造を用いてもよい。ＲＴＤ構造の放射層２は、基板９上に形成される絶縁層１７と、絶縁層１７に形成されたホール内に位置する量子井戸半導体層１８とを備え、量子井戸半導体層１８に電圧を印可することで、テラヘルツ帯の電磁波を放射する。複数の量子井戸半導体層１８をアレイ状に形成してもよい。例えば、ＩｎＰを含む基板９を用いた場合、量子井戸半導体層１８として、ｎ－ＩｎＰ／ｎ－ＩｎＧａＡｓ，ＩｎＧａＡｓ／ＩｎＡｌＡｓを用いることができる。中間層３は、基板９側あるいは基板９の反対側に設けることができる。基板９を中間層３として用いてもよい。放射層２にＲＴＤ構造を用いる場合は、励起光を照射しなくてもよい。 FIG. 17 is a cross-sectional view showing another configuration of the radiation layer of this embodiment. A resonant tunneling diode (RTD) structure may be used for the emissive layer 2, as shown in FIG. The radiation layer 2 of the RTD structure comprises an insulating layer 17 formed on the substrate 9 and a quantum well semiconductor layer 18 positioned in holes formed in the insulating layer 17. A voltage is applied to the quantum well semiconductor layer 18. By doing so, it emits electromagnetic waves in the terahertz band. A plurality of quantum well semiconductor layers 18 may be formed in an array. For example, when the substrate 9 containing InP is used, the quantum well semiconductor layer 18 can be made of n-InP/n-InGaAs or InGaAs/InAlAs. The intermediate layer 3 can be provided on the substrate 9 side or on the opposite side of the substrate 9 . Substrate 9 may be used as intermediate layer 3 . When an RTD structure is used for the emitting layer 2, it is not necessary to irradiate excitation light.
　＜まとめ＞
　以上のように、本開示は以下の態様を包含する。 <Summary>
As described above, the present disclosure includes the following aspects.
　本開示の態様１におけるテラヘルツ波出力装置は、テラヘルツ帯の電磁波を放射する放射層と、前記放射層の後方に配され、テラヘルツ帯の電磁波を反射する反射層と、前記放射層および反射層の間に位置し、テラヘルツ帯の電磁波を透過させる中間層とを備える。 A terahertz wave output device according to aspect 1 of the present disclosure includes a radiation layer that radiates electromagnetic waves in the terahertz band, a reflective layer that is disposed behind the radiation layer and reflects the electromagnetic waves in the terahertz band, and the radiation layer and the reflective layer. and an intermediate layer positioned therebetween and transmitting electromagnetic waves in the terahertz band.
　前記構成によれば、放射層から前方に放射されたテラヘルツ帯の電磁波と、放射層から後方に放射され、反射層で反射されたテラヘルツ帯の電磁波とが重ね合わされたテラヘルツ波を出力することができる。 According to the above configuration, it is possible to output a terahertz wave in which a terahertz-band electromagnetic wave emitted forward from the emitting layer and a terahertz-band electromagnetic wave emitted backward from the emitting layer and reflected by the reflective layer are superimposed. can.
　本開示の態様２におけるテラヘルツ波出力装置は、前記態様１において、前記放射層が、前方に向けてテラヘルツ帯の第１波を放射し、後方に向けてテラヘルツ帯の第２波を放射し、前記第２波が前記反射層で反射されて生じる反射波と、前記第１波とが重ね合わされて生じるテラヘルツ波を前方に出力する。 In the terahertz wave output device according to aspect 2 of the present disclosure, in aspect 1, the emitting layer emits a first terahertz wave forward and a second terahertz wave backward, A terahertz wave generated by superimposing a reflected wave generated by reflecting the second wave on the reflecting layer and the first wave is outputted forward.
　本開示の態様３におけるテラヘルツ波出力装置は、前記態様１または２において、前記中間層が絶縁性を有する、もしくはテラヘルツ波に高い透過性をもつ。 In the terahertz wave output device according to aspect 3 of the present disclosure, in aspect 1 or 2, the intermediate layer has insulating properties or has high permeability to terahertz waves.
　本開示の態様４におけるテラヘルツ波出力装置は、前記態様１から３の何れか一態様において、前記反射層は、前記中間層と比較して、テラヘルツ帯の電磁波の屈折率が大きい。 In the terahertz wave output device according to aspect 4 of the present disclosure, in any one of aspects 1 to 3, the reflecting layer has a higher refractive index for electromagnetic waves in the terahertz band than the intermediate layer.
　本開示の態様５におけるテラヘルツ波出力装置は、前記態様２において、前記第２波に対する前記中間層の屈折率と前記中間層の厚みとの積は、前記第２波の１／４波長以上である。 In the terahertz wave output device according to aspect 5 of the present disclosure, in aspect 2, the product of the refractive index of the intermediate layer and the thickness of the intermediate layer with respect to the second wave is 1/4 wavelength or more of the second wave. be.
　本開示の態様６におけるテラヘルツ波出力装置は、前記態様２において、前記反射波は、前記第１波に対して位相がおよそ０．９π～１．１πずれている。 In the terahertz wave output device according to aspect 6 of the present disclosure, in aspect 2, the reflected wave is out of phase with the first wave by approximately 0.9π to 1.1π.
　本開示の態様７におけるテラヘルツ波出力装置は、前記態様２において、前記中間層は、前記中間層および前記放射層を通過した前記反射波と前記第１波とがコヒーレントとなるような位相制御を行う。 In the terahertz wave output device according to aspect 7 of the present disclosure, in aspect 2, the intermediate layer performs phase control such that the reflected wave and the first wave that have passed through the intermediate layer and the radiation layer are coherent. conduct.
　本開示の態様８におけるテラヘルツ波出力装置は、前記態様２において、前記第２波に対する前記中間層の屈折率および前記中間層の厚みの少なくとも一方が、出力すべきテラヘルツ周波数に応じて設定されている。 In the terahertz wave output device according to aspect 8 of the present disclosure, in aspect 2, at least one of the refractive index of the intermediate layer and the thickness of the intermediate layer with respect to the second wave is set according to the terahertz frequency to be output. there is
　本開示の態様９におけるテラヘルツ波出力装置は、前記態様１から８の何れか一態様において、前記放射層は、磁性金属を含む磁性層である第１層と、非磁性金属を含む非磁性層であり、前記第１層に接する第２層とを含み、前記放射層に、非連続発振のレーザ光が照射される。 A terahertz wave output device according to Aspect 9 of the present disclosure is the terahertz wave output device according to any one of Aspects 1 to 8, wherein the radiation layer is a first layer that is a magnetic layer containing a magnetic metal, and a non-magnetic layer containing a non-magnetic metal. and a second layer in contact with the first layer, and the emitting layer is irradiated with discontinuous wave laser light.
　本開示の態様１０におけるテラヘルツ波出力装置は、前記態様９において、前記反射層および前記中間層が透光性を有し、前記レーザ光が後方から前記放射層に照射される。 In the terahertz wave output device according to aspect 10 of the present disclosure, in aspect 9, the reflective layer and the intermediate layer have translucency, and the laser light is irradiated to the emitting layer from behind.
　本開示の態様１１におけるテラヘルツ波出力装置は、前記態様１０において、前記反射層は、インジウムスズ酸化物（ＩＴＯ）またはインジウム亜鉛酸化物（ＩＺＯ）等の導電層を含む。 In the terahertz wave output device according to aspect 11 of the present disclosure, in aspect 10, the reflective layer includes a conductive layer such as indium tin oxide (ITO) or indium zinc oxide (IZO).
　本開示の態様１２におけるテラヘルツ波出力装置は、前記態様１０または１１において、前記中間層は、マイクロシートガラスまたはマイクロシートプラスチックである。 In the terahertz wave output device according to aspect 12 of the present disclosure, in aspect 10 or 11, the intermediate layer is microsheet glass or microsheet plastic.
　本開示の態様１３におけるテラヘルツ波出力装置は、前記態様２において、前記第１波および前記反射波はパルス波であり、前記第１波のパルスと前記反射波のパルスとが前記放射層の前方で重ね合わされる。 In the terahertz wave output device according to aspect 13 of the present disclosure, in aspect 2, the first wave and the reflected wave are pulse waves, and the pulse of the first wave and the pulse of the reflected wave are in front of the radiation layer. are superimposed on each other.
　本開示の態様１４におけるテラヘルツ波出力方法は、放射層からその前方にテラヘルツ帯の電磁波である第１波を放射させるとともに、前記放射層の後方にテラヘルツ帯の電磁波である第２波を放射させ、前記第２波を前方反射させた反射光と前記第１波とを重ね合わせたテラヘルツ波を出力する。 In the terahertz wave output method according to aspect 14 of the present disclosure, a first wave, which is an electromagnetic wave in the terahertz band, is emitted forward from the emitting layer, and a second wave, which is an electromagnetic wave in the terahertz band, is emitted behind the emitting layer. and outputs a terahertz wave obtained by superimposing the reflected light obtained by forwardly reflecting the second wave and the first wave.
　以上の開示は例示および説明を目的とするものであり、限定を目的とするものではない。これら例示および説明に基づけば、多くの変形形態が当業者にとって自明となるのであるから、これら変形形態も実施形態に含まれることに留意されたい。 The above disclosure is for the purpose of illustration and description, and not for the purpose of limitation. Based on these illustrations and descriptions, it should be noted that many variations will be apparent to those skilled in the art and are therefore included in the embodiments.
　２　放射層
　３　中間層
　４　反射層
　２０　テラヘルツ波出力装置
　ＬＫ　励起光
　ＷＦ　第１波
　ＷＳ　第２波
　ＷＴ　テラヘルツ波（出力波）

  2 radiation layer 3 intermediate layer 4 reflection layer 20 terahertz wave output device LK excitation light WF first wave WS second wave WT terahertz wave (output wave)

Claims (14)

  1. 　テラヘルツ帯の電磁波を放射する放射層と、
    　前記放射層の後方に配され、テラヘルツ帯の電磁波を反射する反射層と、
    　前記放射層および反射層の間に位置し、テラヘルツ帯の電磁波を透過させる中間層とを備える、テラヘルツ波出力装置。     a radiation layer that radiates electromagnetic waves in the terahertz band;
    a reflecting layer arranged behind the emitting layer and reflecting electromagnetic waves in the terahertz band;
    A terahertz wave output device, comprising: an intermediate layer positioned between the radiation layer and the reflection layer and transmitting electromagnetic waves in the terahertz band.
  2. 　前記放射層は、前方に向けてテラヘルツ帯の第１波を放射し、後方に向けてテラヘルツ帯の第２波を放射し、
    　前記第２波が前記反射層で反射されて生じる反射波と、前記第１波とが重ね合わされて生じるテラヘルツ波を前方に出力する、請求項１に記載のテラヘルツ波出力装置。     The emitting layer emits a first wave in the terahertz band forward and a second wave in the terahertz band backward;
    2. The terahertz wave output device according to claim 1, outputting forward a terahertz wave generated by superimposing a reflected wave generated by reflecting said second wave on said reflecting layer and said first wave.
  3. 　前記中間層は絶縁性を有する、請求項１に記載のテラヘルツ波出力装置。 The terahertz wave output device according to claim 1, wherein the intermediate layer has insulating properties.
  4. 　前記反射層は、前記中間層と比較して、テラヘルツ帯の電磁波の屈折率が大きい、請求項１に記載のテラヘルツ波出力装置。 The terahertz wave output device according to claim 1, wherein the reflective layer has a higher refractive index for electromagnetic waves in the terahertz band than the intermediate layer.
  5. 　前記第２波に対する前記中間層の屈折率と前記中間層の厚みとの積は、前記第２波の１／４波長以上である、請求項２に記載のテラヘルツ波出力装置。 The terahertz wave output device according to claim 2, wherein the product of the refractive index of the intermediate layer and the thickness of the intermediate layer for the second wave is 1/4 wavelength or more of the second wave.
  6. 　前記反射波は、前記第１波に対して位相が０．９π～１．１πずれている、請求項２に記載のテラヘルツ波出力装置。 The terahertz wave output device according to claim 2, wherein the reflected wave is out of phase with the first wave by 0.9π to 1.1π.
  7. 　前記中間層は、前記中間層および前記放射層を通過した前記反射波と前記第１波とがコヒーレントとなるような位相制御を行う、請求項２に記載のテラヘルツ波出力装置。 The terahertz wave output device according to claim 2, wherein the intermediate layer performs phase control such that the reflected wave and the first wave that have passed through the intermediate layer and the radiation layer are coherent.
  8. 　前記第２波に対する前記中間層の屈折率および前記中間層の厚みの少なくとも一方が、出力すべきテラヘルツ周波数に応じて設定されている、請求項２に記載のテラヘルツ波出力装置。 The terahertz wave output device according to claim 2, wherein at least one of the refractive index of the intermediate layer and the thickness of the intermediate layer with respect to the second wave is set according to the terahertz frequency to be output.
  9. 　前記放射層は、磁性金属を含む磁性層である第１層と、非磁性金属を含む非磁性層であり、前記第１層に接する第２層とを含み、
    　前記放射層に、非連続発振のレーザ光が照射される、請求項１～８のいずれか１項に記載のテラヘルツ波出力装置。     the radiation layer includes a first layer that is a magnetic layer containing a magnetic metal and a second layer that is a non-magnetic layer containing a non-magnetic metal and is in contact with the first layer,
    The terahertz wave output device according to any one of claims 1 to 8, wherein the emitting layer is irradiated with discontinuous wave laser light.
  10. 　前記反射層および前記中間層が透光性を有し、
    　前記レーザ光が後方から前記放射層に照射される、請求項９に記載のテラヘルツ波出力装置。     The reflective layer and the intermediate layer have translucency,
    10. The terahertz wave output device according to claim 9, wherein the emitting layer is irradiated with the laser light from behind.
  11. 　前記反射層は、インジウムスズ酸化物（ＩＴＯ）またはインジウム亜鉛酸化物（ＩＺＯ）を含む、請求項１０に記載のテラヘルツ波出力装置。 The terahertz wave output device according to claim 10, wherein the reflective layer contains indium tin oxide (ITO) or indium zinc oxide (IZO).
  12. 　前記中間層は、マイクロシートガラスまたはマイクロシートプラスチックである、請求項１０に記載のテラヘルツ波出力装置。 The terahertz wave output device according to claim 10, wherein the intermediate layer is microsheet glass or microsheet plastic.
  13. 　前記第１波および前記反射波はパルス波であり、前記第１波のパルスと前記反射波のパルスとが前記放射層の前方で重ね合わされる、請求項２に記載のテラヘルツ波出力装置。 The terahertz wave output device according to claim 2, wherein the first wave and the reflected wave are pulse waves, and the pulse of the first wave and the pulse of the reflected wave are superimposed in front of the radiation layer.
  14. 　放射層からその前方にテラヘルツ帯の電磁波である第１波を放射させるとともに、前記放射層の後方にテラヘルツ帯の電磁波である第２波を放射させ、前記第２波を前方反射させた反射光と前記第１波とを重ね合わせたテラヘルツ波を出力する、テラヘルツ波出力方法。 A first wave that is an electromagnetic wave in the terahertz band is radiated forward from the radiation layer, a second wave that is an electromagnetic wave in the terahertz band is radiated behind the radiation layer, and the second wave is reflected forward. a terahertz wave output method for outputting a terahertz wave obtained by superimposing the first wave and the first wave.
PCT/JP2023/006430 2022-02-24 2023-02-22 Terahertz wave output apparatus and method for outputting terahertz wave WO2023163032A1 (en)

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