WO2023124624A1 - 一种声表面波滤波器 - Google Patents
一种声表面波滤波器 Download PDFInfo
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- WO2023124624A1 WO2023124624A1 PCT/CN2022/132741 CN2022132741W WO2023124624A1 WO 2023124624 A1 WO2023124624 A1 WO 2023124624A1 CN 2022132741 W CN2022132741 W CN 2022132741W WO 2023124624 A1 WO2023124624 A1 WO 2023124624A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Definitions
- the invention relates to the technical field of filters, in particular to a surface acoustic wave filter.
- a filter is a frequency selection device.
- Traditional filters can pass specific frequency components in a signal while greatly attenuating other frequency components. Utilizing this frequency selection function of the filter, it is possible to filter out interference noise or perform spectrum analysis. Any device or system that can pass specific frequency components in a signal while greatly attenuating or suppressing other frequency components is called a filter.
- the present invention proposes a surface acoustic wave filter that can integrate multiple parameterized units, has high performance, small volume, and low cost.
- an embodiment of the present invention provides a surface acoustic wave filter, including: an interdigital transducer, two reflectors arranged on opposite sides of the interdigital transducer, and an integrated A plurality of parameterized units on the interdigital transducer and the two reflectors.
- the plurality of parameterization units include a first parameterization unit, a second parameterization unit, a third parameterization unit, a fourth parameterization unit, a fifth parameterization unit and a sixth parameterization unit arranged at intervals , the first parameterization unit, the third parameterization unit and the fifth parameterization unit are arranged side by side, and the second parameterization unit, the fourth parameterization unit and the sixth parameterization unit are arranged side by side.
- the first parameterization unit includes oppositely arranged first energy sink bars, a plurality of first finger bars arranged between the first energy sink bars, and a plurality of first finger bars respectively arranged A plurality of apertures on and resonators disposed on the plurality of apertures;
- the aperture includes a first aperture and a second aperture corresponding to the first aperture
- the resonator includes a first resonator disposed on the first aperture and a second aperture disposed on the second aperture Second resonator.
- the parameters of the first parameterization unit include:
- the second parameterization unit and the first parameterization unit are arranged at intervals along the first direction of the first parameterization unit;
- the second parameterization unit includes a second energy sink bar oppositely arranged, A plurality of second finger bars arranged between the second energy sink bars and a plurality of apertures respectively arranged on the plurality of second finger bars;
- the apertures include a first aperture and the first aperture Correspondingly set the second aperture.
- the parameters of the second parameterization unit include:
- the third parameterization unit is arranged along the second direction of the first parameterization unit, and the third parameterization unit includes a third energy-sink bar arranged oppositely, arranged on the third energy-sink bar a plurality of third fingers between the bars, a plurality of apertures respectively disposed on the plurality of third fingers, and resonators disposed on a plurality of the apertures;
- the aperture includes a first aperture and a second aperture corresponding to the first aperture, and the resonator includes a third resonator arranged on the first aperture and a third resonator arranged on the second aperture Four resonators.
- the parameters of the third parameterization unit include:
- the fourth parameterization units are arranged at intervals along the first direction of the third parameterization unit, and the fourth parameterization units include oppositely arranged fourth energy sink bars, arranged on the fourth energy sink A plurality of fourth finger bars between the bars and a plurality of apertures respectively disposed on the plurality of fourth finger bars; the apertures include a first aperture and a second aperture corresponding to the first aperture.
- the parameters of the fourth parameterization unit include:
- the plurality of fourth fingers is an odd number and greater than or equal to 3, the distance between the fourth fingers and the reflector, the metallization ratio and the structural period of the distance between the fourth fingers and the reflector, The length of the first aperture, the length of the second aperture, the distance between the first aperture and the second aperture, the width of the fourth energy sink bar, wherein, the number of the fourth fingers It is an odd number and greater than or equal to 3.
- the fifth parameterization unit is arranged at intervals along the second direction of the third parameterization unit, and the fifth parameterization unit includes a fifth energy sink bar arranged oppositely and a fifth energy sink bar arranged on the fifth energy sink A plurality of fifth finger bars between the bars, the plurality of fifth finger bars are arranged side by side.
- the sixth parameterization unit is arranged at intervals along the second direction of the fourth parameterization unit, and the sixth parameterization unit includes a plurality of sixth fingers arranged side by side.
- the surface acoustic wave filter of the present invention Compared with the prior art, in the surface acoustic wave filter of the present invention, two reflectors are arranged oppositely on both sides of the interdigital transducer, and the interdigital transducer and the two reflectors are integrated Multiple parameterized units on the filter can improve the overall performance of the filter by integrating multiple parameter units, and also have the effect of small size and low cost, and are widely used.
- FIG. 1 is a schematic structural diagram of a surface acoustic wave filter provided by an embodiment of the present invention
- FIG. 2 is a schematic structural diagram of a first parameter unit provided by an embodiment of the present invention.
- FIG. 3 is a schematic structural diagram of a resonator of a first parameter unit provided by an embodiment of the present invention
- FIG. 4 is a schematic structural diagram of a second parameter unit provided by an embodiment of the present invention.
- FIG. 5 is a schematic structural diagram of a third parameter unit provided by an embodiment of the present invention.
- FIG. 6 is a schematic structural diagram of a fourth parameter unit provided by an embodiment of the present invention.
- FIG. 7 is a schematic structural diagram of a fifth parameter unit provided by an embodiment of the present invention.
- Fig. 8 is a schematic structural diagram of a sixth parameter unit provided by an embodiment of the present invention.
- the first parameterization unit 2. The second parameterization unit, 3. The third parameterization unit, 4. The fourth parameterization unit, 5. The fifth parameterization unit, 6. The sixth parameterization unit , 7, interdigital transducer, 8, reflector, 9, the first energy sink bar, 10, the first finger bar, 11, the aperture, 111, the first aperture, 112, the second aperture, 12, the resonator, 121, the first resonator, 122, the second resonator, 123, the third resonator, 124, the fourth resonator, 13, the second energy sink bar, 14, the second finger bar, 15, the third energy sink bar , 16.
- the third bar 17.
- the fourth bar 18.
- the fourth bar 19.
- the fifth bar 20.
- the fifth bar 21.
- the sixth bar 22.
- the structural cycle 23 The distance between the finger strip and the reflector.
- the present invention provides a surface acoustic wave filter, including: an interdigital transducer 7, two reflectors 8 arranged on both sides of the interdigital transducer 7, And a plurality of parameterization units integrated on the interdigital transducer 7 and the two reflectors 8 .
- the interdigital transducer 7 is to form a metal pattern on the surface of the piezoelectric substrate in the shape of crossed fingers of two hands, and its function is to realize the sound-electric transduction.
- the interdigital transducer 7 is the most basic unit of the surface acoustic wave device. Only by accurately analyzing the IDT can the response of the surface acoustic wave device be predicted, and then the performance tolerance reliability design and performance optimization design of the device chip layout can be implemented.
- the transducer (input transducer) at the left end of the substrate of the interdigital transducer 7 converts the incoming electrical signal into an acoustic signal through the inverse piezoelectric effect.
- the transducer (output transducer) converts the acoustic signal into an electrical signal for output.
- the reflector 8 is a radar wave reflector 8 of different specifications made from sheet metal according to different purposes.
- the electromagnetic wave will be refracted and amplified on the metal corner to generate a strong echo signal, and a strong echo target will appear on the radar screen.
- the plurality of parameterization units include a first parameterization unit 1, a second parameterization unit 2, a third parameterization unit 3, a fourth parameterization unit 4, a fifth parameterization unit 5 and a sixth parameterization unit arranged at intervals.
- a parameterization unit 6, the first parameterization unit 1, the third parameterization unit 3 and the fifth parameterization unit 5 are arranged side by side, the second parameterization unit 2, the fourth parameterization unit 4 and the Six parameterization units 6 are arranged side by side.
- the first parameterization unit 1 integrated on the interdigital transducer 7 and the two reflectors 8 by setting two reflectors 8 opposite to each other on both sides of the interdigital transducer 7, the first parameterization unit 1 integrated on the interdigital transducer 7 and the two reflectors 8 , the second parameterization unit 2, the third parameterization unit 3, the fourth parameterization unit 4, the fifth parameterization unit 5 and the sixth parameterization unit 6, by adjusting the first parameterization unit 1, the second parameterization unit 2.
- Different fingers, apertures, and resonators on the third parameterization unit 3, the fourth parameterization unit 4, the fifth parameterization unit 5, and the sixth parameterization unit 6 to improve the overall performance of the surface acoustic wave filter, At the same time, it also has the effects of small size and low cost, and is widely used.
- the first parameterization unit 1 includes oppositely arranged first energy-receiving bars 9, a plurality of first fingers 10 arranged between the first energy-receiving bars 9, respectively arranged on the A plurality of apertures on the plurality of first finger strips 10 and resonators 12 disposed on the plurality of apertures; the apertures include a first aperture 111 and a second aperture 112 corresponding to the first aperture 111,
- the resonator 12 includes a first resonator 121 disposed on the first aperture 111 and a second resonator 122 disposed on the second aperture 112 .
- the parameters of the first parameterization unit 1 include: the number of the plurality of first fingers 10 is Nt, the metallization ratio and the structural period of the distance between the first fingers 10 and the reflector 8 22.
- the length of the first aperture 111 is W1
- the length of the second aperture 112 is W2
- the distance between the first aperture 111 and the second aperture 112 is S
- the width of the energy sink is Wb
- the ratio of the base of the triangle of the first resonator 121 to the width of the first finger the ratio of the height of the triangle of the first resonator 121 to the width of the first finger 10
- the number of the first fingers 10 is an odd number and greater than or equal to three.
- the acoustic surface produced by the first parameterization unit 11 The waves are reflected by the reflectors 8 on both sides.
- the energy is transmitted to multiple first finger bars 10 through the energy sink bar 9 of the first parameterization unit 11, and is transmitted to the resonator 12 through the multiple apertures 11 on the first finger bar 10, and the resonator
- the resonator 12 can allow a certain frequency signal to pass through and block other frequency signals to achieve the purpose of color selection.
- the signal frequency is equal to the natural frequency of the resonator 12, the signal passes smoothly as if passing through a small resistance (or wire). Frequencies far from the natural resonant frequency try to pass through it like a big impedance.
- the resonator 12 since the aperture 11 includes a first aperture 111 and a second aperture 112 corresponding to the first aperture 111, the resonator 12 includes a first resonator 121 arranged on the first aperture 111 And the second resonator 122 arranged on the second aperture 112, through the corresponding setting of the first resonator 121 and the second resonator 122 to block the frequency signal, so that the effective frequency segment can pass through the aperture 11, and then make Filter performance is higher.
- the plurality of apertures 11 includes seven, which are arranged at intervals between each other, wherein the resonators 12 of the three apertures 11 are arranged on the same horizontal line, and the resonators 12 on the other four apertures 11 are arranged on the same horizontal line, The positions of the resonators 12 of 3 apertures 11 and the resonators 12 of 4 apertures 11 are different.
- the second parameterization unit 2 and the first parameterization unit 1 are arranged at intervals along the first direction of the first parameterization unit 1;
- the second parameterization unit 2 includes a relative arrangement The second energy sink bar 13, a plurality of second finger bars 14 arranged between the second energy sink bars 13, and a plurality of apertures 11 respectively arranged on the plurality of second finger bars 14;
- the The apertures include a first aperture 111 and a second aperture 112 corresponding to the first aperture 111 .
- the parameters of the second parameterization unit 2 include: the number of the plurality of second fingers 14, the metallization ratio of the distance between the second fingers 14 and the reflector and the structural period 22, so The length of the first aperture 111, the length of the second aperture 112, the distance between the first aperture 111 and the second aperture 112, the width of the second energy sink bar 13, wherein the second The number of finger bars 14 is an odd number and greater than or equal to three.
- the metallization ratio and structural period 22 of the pitch 23 of the reflector 8 of the second finger strip 14 the length of the first aperture 111 is W1, and the length of the second aperture 112 is W2, so The distance between the first aperture 111 and the second aperture 112 is S, and the width of the second energy sink bar 13 is Wb.
- the third parameterization unit 3 is arranged along the second direction of the first parameterization unit, and the third parameterization unit 3 includes a third energy sink bar 15 arranged oppositely, arranged on A plurality of third finger bars 16 between the third energy sink bars 15, a plurality of apertures respectively arranged on the plurality of third finger bars 16, and resonators arranged on a plurality of the apertures;
- the aperture includes a first aperture 111 and a second aperture 112 corresponding to the first aperture 111, and the resonator includes a third resonator 123 arranged on the first aperture 111 and a third resonator 123 arranged on the second aperture 111.
- a fourth resonator 124 on the aperture 112 is arranged along the second direction of the first parameterization unit, and the third parameterization unit 3 includes a third energy sink bar 15 arranged oppositely, arranged on A plurality of third finger bars 16 between the third energy sink bars 15, a plurality of apertures respectively arranged on the plurality of third finger bars 16, and reson
- the parameters of the third parameterization unit 3 include: the number of the plurality of third fingers 16, the metallization ratio of the distance 23 between the third fingers 16 and the reflector and the structural period 22, The length of the first aperture 111, the length of the second aperture 112, the distance between the first aperture 111 and the second aperture 112, the width of the energy sink bar, the triangular shape of the third resonator The ratio of the base to the width of the fingers, the ratio of the height of the triangle of the third resonator 123 to the width of the third fingers 16, wherein the number of the third fingers 16 is an odd number and greater than or equal to 3.
- the length of the first aperture 111 is W1
- the length of the second aperture 112 is W2
- the distance between the first aperture 111 and the second aperture 112 is S
- the energy sink bar 9 The width is Wb
- the number of the plurality of third finger bars 16 is Nt
- the Nt is an odd number and greater than or equal to 3
- the ratio of the base of the triangle of the third resonator 123 to the width of the third finger bar 16 is m
- the ratio of the height of the triangle of the third resonator 123 to the width of the third finger bar 16 is n.
- the spatial distance between the third finger bar 16 of the triangular structure and the reflector 8 is placed in the Pcell module as a variable parameter variable; the above-mentioned triangular resonator 12.
- the default distance between the third finger 16 and the reflector 8 is (1-Metallization Ratio (metallization ratio))*Period (period, period).
- the fourth parameterization unit 4 is arranged at intervals along the first direction of the third parameterization unit 3, and the fourth parameterization unit 4 includes a fourth energy-sinking bar 17, which is arranged oppositely.
- the aperture 11 includes a first aperture 111 and the same as the first aperture 111
- the first aperture 111 is correspondingly provided with the second aperture 112 .
- the parameters of the fourth parameterization unit 4 include: a plurality of the fourth fingers 18 is an odd number and greater than or equal to 3, the distance 23 between the fourth fingers 18 and the reflector, the fourth The metallization ratio and structural period 22 of the spacing 23 between the fingers 18 and the reflector, the length of the first aperture 111, the length of the second aperture 112, the distance between the first aperture 111 and the second aperture 112, the width of the fourth energy sink bar 17, wherein the number of the fourth finger bars 18 is an odd number and greater than or equal to three.
- the metallization ratio and structural period 22 of the distance 23 between the fourth finger bar 17 and the reflector 8 the length of the first aperture 111 is W1, the length of the second aperture 112 is W2, The distance between the first aperture 111 and the second aperture 112 is S, the width of the fourth energy sink bar 17 is Wb, and the distance between the fourth finger bar 17 and the reflector 8 is Gap.
- the fifth parameterization unit 5 is arranged at intervals along the second direction of the third parameterization unit 3, and the fifth parameterization unit 5 includes a fifth energy sink bar 19 and a set The plurality of fifth finger bars 20 between the fifth energy sink bars 19 are arranged side by side.
- the sixth parameterization unit 6 is arranged at intervals along the second direction of the fourth parameterization unit, and the sixth parameterization unit 6 includes a plurality of sixth fingers 21 arranged side by side.
- the number of the plurality of finger bars 21 mentioned above is the same, and they are all seven finger bars 10 grids arranged side by side.
- Nt refers to the number of bar grids (IDT), integer type, because IDT is central axis symmetric, so Nt must be an odd number and must be ⁇ 3, if it is an even number, the IDT structure will not satisfy If the central axis is symmetrical, an error will be reported, and the expected structural graph cannot be generated.
- Nt is 301.
- Ng The index number of the reflector 8 (Reflector), integer type, parity or even, if the Ng of the Resonator is set to 0, a single IDT structure will be generated.
- Ng is 30.
- the metallization ratio (Metallization_Ratio:) a/p must satisfy 0 ⁇ a/p ⁇ 1, otherwise an error will be reported.
- the metallization ratio is 0.5.
- Resonator 12 Setting without gap (Gap) structure:
- Wb is 1um.
- W1, W2: W1 and W2 must be ⁇ 0, but cannot be 0 at the same time, otherwise an error will be reported, because when they are 0 at the same time, aperture 11 will disappear.
- W1 is 36um
- W2 is 2.5um.
- Period structure period 22;
- Gap the distance between IDT and Reflector, optional, the distance between IDT and Reflector is 1um.
- Aperture The length of aperture 11 in Reflector (Shorted Electrodes, Open-ciucuit Electrodes). When the Pcell parameter setting is wrong, you can modify it according to the prompt information.
- the present invention also provides a design method of a surface acoustic wave filter, comprising the steps of: presetting the interdigital transducer 7 in the ADS software; relatively setting two reflectors on the preset interdigital transducer 7 8; and design a plurality of parameterization units on the preset interdigital transducer 7, wherein the plurality of parameterization units are arranged between two reflectors 8; by adjusting each parameter of a plurality of parameterization units , by integrating multiple parameter units to improve the overall performance of the filter, it also has the effect of small size and low cost, and is widely used.
- the plurality of parameterization units include a first parameterization unit 1, a second parameterization unit 2, a third parameterization unit 3, a fourth parameterization unit 4, a fifth parameterization unit 5 and a Six parameterization units 6, the first parameterization unit 1, the third parameterization unit 3 and the fifth parameterization unit 5 are arranged side by side, the second parameterization unit 2, the fourth parameterization unit 4 and the sixth parameterization unit 6 are arranged side by side.
- the first parameterization unit 1 includes oppositely arranged first energy-receiving bars 9, a plurality of first fingers 10 arranged between the first energy-receiving bars 9, respectively arranged on the A plurality of apertures on the plurality of first finger strips 10 and resonators 12 disposed on the plurality of apertures; the apertures include a first aperture 111 and a second aperture 112 corresponding to the first aperture 111,
- the resonator 12 includes a first resonator 121 disposed on the first aperture 111 and a second resonator 122 disposed on the second aperture 112 .
- the parameters of the first parameterization unit 1 include: the number of the plurality of first fingers 10 is Nt, the metallization ratio and the structural period of the distance between the first fingers 10 and the reflector 8 22.
- the length of the first aperture 111 is W1
- the length of the second aperture 112 is W2
- the distance between the first aperture 111 and the second aperture 112 is S
- the width of the energy sink is Wb
- the ratio of the base of the triangle of the first resonator 121 to the width of the first finger the ratio of the height of the triangle of the first resonator 121 to the width of the first finger 10
- the number of the first fingers 10 is an odd number and greater than or equal to three.
- Resonator By adjusting different fingers and apertures on the first parameterization unit 1, the second parameterization unit 2, the third parameterization unit 3, the fourth parameterization unit 4, the fifth parameterization unit 5 and the sixth parameterization unit 6 , Resonator to improve the overall performance of the surface acoustic wave filter, but also has the effect of small size, low cost, widely used.
- the acoustic surface produced by the first parameterization unit 11 The waves are reflected by the reflectors 8 on both sides.
- the energy is transmitted to multiple first finger bars 10 through the first energy sink bar 9 of the first parameterization unit 11, and then transmitted to the resonator 12 through the multiple apertures 11 on the first finger bar 10, Through the resonator 12, a certain frequency signal can be passed through, and other frequency signals can be blocked to achieve the purpose of color selection.
- the signal frequency is equal to the natural frequency of the resonator 12, the signal passes smoothly as if passing through a small resistance (or wire). , when frequencies away from the natural resonant frequency try to pass it acts like a large impedance.
- the resonator 12 since the aperture 11 includes a first aperture 111 and a second aperture 112 corresponding to the first aperture 111, the resonator 12 includes a first resonator 121 arranged on the first aperture 111 And the second resonator 122 arranged on the second aperture 112, through the corresponding setting of the first resonator 121 and the second resonator 122 to block the frequency signal, so that the effective frequency segment can pass through the aperture 11, and then make Filter performance is higher.
- the first parameterization unit is arranged between the two reflectors, and the two ends of the first parameterization unit are arranged parallel to the two ends of the reflector;
- the first parameterization unit includes an opposite arrangement The energy sink bar, a plurality of finger bars arranged between the energy sink bars, a plurality of apertures respectively arranged on a plurality of the finger bars, and a resonator arranged on a plurality of the apertures;
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Abstract
本发明提供了一种声表面波滤波器,包括:叉指换能器、相对设置于所述叉指换能器两侧的两个反射器、以及集成在所述叉指换能器和所述两个反射器上的多个参数化单元;通过在叉指换能器两侧相对设置两个反射器,在所述叉指换能器和所述两个反射器上集成多个参数化单元,提高滤波器的整体性能。本发明通过设置不同的指条、孔径、谐振器以提高滤波器的整体性能,同时还具有体积小、成本低的效果,使用广泛。
Description
本发明涉及滤波器技术领域,尤其涉一种声表面波滤波器。
随着5G-NR技术的商用化,个人移动手持设备中支持的频段从几个增加到十几个。这些频段间的干扰日益严重,因此对高性能滤波器有着十分的迫切需求。
滤波器是一种选频装置,传统的滤波器可以使信号中特定的频率成分通过,而极大地衰减其他频率成分。利用滤波器的这种选频作用,可以滤除干扰噪声或进行频谱分析。凡是可以使信号中特定的频率成分通过,而极大地衰减或抑制其他频率成分的装置或***都称之为滤波器。
然而,传统的滤波器滤波效果不佳,性能低,体积大,成本高,适用范围小。
因此,有必要提供一种新的声表面波滤波器以解决上述技术问题。
发明内容
针对以上相关技术的不足,本发明提出一种可集成多个参数化单元,具有高性能、体积小、成本低的声表面波滤波器。
为了解决上述技术问题,本发明实施例提供了一种声表面波滤波器,包括:叉指换能器、相对设置于所述叉指换能器两侧的两个反射器、以及集成在所述叉指换能器和所述两个反射器上的多个参数化单元。
优选的,所述多个参数化单元包括相互间隔设置的第一参数化单元、第二参数化单元、第三参数化单元、第四参数化单元、第五参数 化单元及第六参数化单元,所述第一参数化单元、所述第三参数化单元及所述第五参数化单元并排设置,所述第二参数化单元、第四参数化单元及第六参数化单元并排设置。
优选的,所述第一参数化单元包括相对设置的第一汇能条、设置在所述第一汇能条之间的多个第一指条、分别设置在所述多个第一指条上的多个孔径以及设置在所述多个孔径的谐振器;
所述孔径包括第一孔径和与所述第一孔径对应设置的第二孔径,所述谐振器包括设置于所述第一孔径上的第一谐振器和设置于所述第二孔径上的第二谐振器。
优选的,所述第一参数化单元的参数包括:
所述多个第一指条的数量,所述第一指条与所述反射器的间距的金属化比和结构周期,所述第一孔径的长度,所述第二孔径的长度,所述第一孔径与所述第二孔径的间距,所述汇能条的宽度,所述第一谐振器的三角形底边与所述第一指条宽度的比值,所述第一谐振器的三角形的高与所述第一指条宽度的比值,其中,所述第一指条的数量为奇数且大于等于3。
优选的,所述第二参数化单元与所述第一参数化单元沿所述第一参数化单元的第一方向间隔设置;所述第二参数化单元包括相对设置的第二汇能条、设置在所述第二汇能条之间的多个第二指条以及分别设置在所述多个第二指条上的多个孔径;所述孔径包括第一孔径和与所述第一孔径对应设置的第二孔径。
优选的,所述第二参数化单元的参数包括:
所述多个第二指条的数量,所述第二指条与所述反射器的间距的金属化比和结构周期,所述第一孔径的长度,所述第二孔径的长度,所述第一孔径与所述第二孔径的间距,所述第二汇能条的宽度,其中,所述第二指条的数量为奇数且大于等于3。
优选的,所述第三参数化单元与沿所述第一参数化单元的第二方向设置,所述第三参数化单元包括相对设置的第三汇能条、设置在所 述第三汇能条之间的多个第三指条、分别设置在所述多个第三指条上的多个孔径以及设置在多个所述孔径上的谐振器;
所述孔径包括第一孔径和与所述第一孔径对应设置的第二孔径,所述谐振器包括设置于所述第一孔径上的第三谐振器和设置于所述第二孔径上的第四谐振器。
优选的,所述第三参数化单元的参数包括:
所述多个第三指条的数量,所述第三指条与所述反射器的间距的金属化比和结构周期,所述第一孔径的长度,所述第二孔径的长度,所述第一孔径与所述第二孔径的间距,所述汇能条的宽度,所述第三谐振器的三角形底边与所述第三指条宽度的比值,所述第三谐振器的三角形的高与所述第三指条宽度的比值,其中,所述第三指条的数量为奇数且大于等于3。
优选的,所述第四参数化单元沿所述第三参数化单元的第一方向间隔设置,所述第四参数化单元包括相对设置的第四汇能条、设置在所述第四汇能条之间的多个第四指条以及分别设置在所述多个第四指条上的多个孔径;所述孔径包括第一孔径和与所述第一孔径对应设置的第二孔径。
优选的,所述第四参数化单元的参数包括:
多个所述第四指条为奇数且大于等于3,所述第四指条与所述反射器的间距,所述第四指条与所述反射器的间距的金属化比和结构周期,所述第一孔径的长度,所述第二孔径的长度,所述第一孔径与所述第二孔径的间距,所述第四汇能条的宽度,其中,所述第四指条的数量为奇数且大于等于3。
优选的,所述第五参数化单元沿所述第三参数化单元的第二方向间隔设置,所述第五参数化单元包括相对设置的第五汇能条和设置在所述第五汇能条之间的多个第五指条,所述多个第五指条并列设置。
优选的,所述第六参数化单元沿所述第四参数化单元的第二方向间隔设置,所述第六参数化单元包括并列设置的多个第六指条。
与现有技术相比,本发明的声表面波滤波器中,通过在叉指换能器两侧的相对设置两个反射器,集成在所述叉指换能器和所述两个反射器上的多个参数化单元,通过集成多个参数单元提高滤波器的整体性能,同时还具有体积小、成本低的效果,使用广泛。
下面结合附图详细说明本发明。通过结合以下附图所作的详细描述,本发明的上述或其他方面的内容将变得更清楚和更容易理解。附图中:
图1为本发明实施例提供的一种声表面波滤波器的结构示意图;
图2为本发明实施例提供的第一参数单元的结构示意图;
图3为本发明实施例提供的第一参数单元的的谐振器的结构示意图;
图4为本发明实施例提供的第二参数单元的结构示意图;
图5为本发明实施例提供的第三参数单元的结构示意图;
图6为本发明实施例提供的第四参数单元的结构示意图;
图7为本发明实施例提供的第五参数单元的结构示意图;
图8为本发明实施例提供的第六参数单元的结构示意图。
图中,1、第一参数化单元,2、第二参数化单元,3、第三参数化单元,4、第四参数化单元,5、第五参数化单元,6、第六参数化单元,7、叉指换能器,8、反射器,9、第一汇能条,10、第一指条,11、孔径,111、第一孔径,112、第二孔径,12、谐振器,121、第一谐振器,122、第二谐振器,123、第三谐振器,124、第四谐振器,13、第二汇能条,14、第二指条,15、第三汇能条,16、第三指条,17、第四汇能条,18、第四指条,19、第五汇能条,20、第五指条,21、第六指条,22、结构周期,23、指条与反射器的间距。
下面结合附图详细说明本发明的具体实施方式。
在此记载的具体实施方式/实施例为本发明的特定的具体实施方式,用于说明本发明的构思,均是解释性和示例性的,不应解释为对本发明实施方式及本发明范围的限制。除在此记载的实施例外,本领域技术人员还能够基于本申请权利要求书和说明书所公开的内容采用显而易见的其它技术方案,这些技术方案包括采用对在此记载的实施例的做出任何显而易见的替换和修改的技术方案,都在本发明的保护范围之内。
以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如上、下、前、后、左、右、内、外、侧面等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。
请参图1-8所示,本发明提供了一种声表面波滤波器,包括:叉指换能器7、相对设置于所述叉指换能器7两侧的两个反射器8、以及集成在所述叉指换能器7和所述两个反射器8上的多个参数化单元。
其中,叉指换能器7(IDT),就是在压电基片表面上形成形状像两只手的手指交叉状的金属图案,它的作用是实现声一电换能。叉指换能器7是构成声表面波器件最基本的单元,只有对IDT进行准确分析才能预计声表面波器件的响应,进而实施器件芯片版图的性能容差可靠性设计及其性能优化设计。叉指换能器7的基片左端的换能器(输入换能器)通过逆压电效应将愉入的电信号转变成声信号,此声信号沿基片表面传播,最终由基片右边的换能器(输出换能器)将声信号转变成电信号输出。
反射器8它是通过金属板材根椐不同用途做成的不同规格的雷达波反射器8。当雷达电磁波扫描到角反射后,电磁波会在金属角上产生折射放大,产生很强的回波信号,在雷达的屏幕上出现很强的回波目标。
所述多个参数化单元包括相互间隔设置的第一参数化单元1、第 二参数化单元2、第三参数化单元3、第四参数化单元4、第五参数化单元5及第六参数化单元6,所述第一参数化单元1、所述第三参数化单元3及所述第五参数化单元5并排设置,所述第二参数化单元2、第四参数化单元4及第六参数化单元6并排设置。
具体的,通过在通过在叉指换能器7两侧的相对设置两个反射器8,集成在所述叉指换能器7和所述两个反射器8上的第一参数化单元1、第二参数化单元2、第三参数化单元3、第四参数化单元4、第五参数化单元5及第六参数化单元6,通过调节第一参数化单元1、第二参数化单元2、第三参数化单元3、第四参数化单元4、第五参数化单元5及第六参数化单元6上不同的指条、孔径、谐振器以提高声表面波滤波器的整体性能,同时还具有体积小、成本低的效果,使用广泛。
在本实施例中,所述第一参数化单元1包括相对设置的第一汇能条9、设置在所述第一汇能条9之间的多个第一指条10、分别设置在所述多个第一指条10上的多个孔径以及设置在所述多个孔径的谐振器12;所述孔径包括第一孔径111和与所述第一孔径111对应设置的第二孔径112,所述谐振器12包括设置于所述第一孔径111上的第一谐振器121和设置于所述第二孔径112上的第二谐振器122。
其中,所述第一参数化单元1的参数包括:所述多个第一指条10的数量为Nt,所述第一指条10与所述反射器8的间距的金属化比和结构周期22,所述第一孔径111的长度为W1,所述第二孔径112的长度为W2,所述第一孔径111与所述第二孔径112的间距为S,所述汇能条的宽度为Wb,所述第一谐振器121的三角形底边与所述第一指条宽度的比值,所述第一谐振器121的三角形的高与所述第一指条10宽度的比值,其中,所述第一指条10的数量为奇数且大于等于3。
具体的,通过在叉指换能器7上集成至少一个第一参数化单元11,通过在第一参数化单元11的两侧相对设置反射器8,在第一参数化单元11产生的声表面波通过两侧的反射器8进行反射出去。
具体的,通过第一参数化单元11的汇能条9将能量传输到多个第 一指条10上,通过第一指条10上的多个孔径11进行传输至谐振器12上,通过谐振器12可以让某段频率信号通过,阻挡其他频率信号,达到选泽的目的,当信号频率和谐振器12固有频率相等时,该信号顺利通过就像通过一个小电阻(或导线)一样,当远离固有谐振频率的频率试图通过它就像一个大阻抗。
具体的,由于所述孔径11包括第一孔径111和与所述第一孔径111对应设置的第二孔径112,所述谐振器12包括设置于所述第一孔径111上的第一谐振器121和设置于所述第二孔径112上的第二谐振器122,通过第一谐振器121和第二谐振器122对应设置进行频率信号阻挡,从而使得孔径11上能通过有效的频率段,进而使得滤波器的性能更高。
进一步的,多个孔径11包括7个,相互之间间隔设置,其中3个孔径11的谐振器12设置位置为同一水平线,另外4个的孔径11上的谐振器12设置的位置为同一水平线,3个孔径11的谐振器12和4个孔径11的谐振器12位置不同。
在本实施例中,所述第二参数化单元2与所述第一参数化单元1沿所述第一参数化单元1的第一方向间隔设置;所述第二参数化单元2包括相对设置的第二汇能条13、设置在所述第二汇能条13之间的多个第二指条14以及分别设置在所述多个第二指条14上的多个孔径11;所述孔径包括第一孔径111和与所述第一孔径111对应设置的第二孔径112。
其中,所述第二参数化单元2的参数包括:所述多个第二指条14的数量,所述第二指条14与所述反射器的间距的金属化比和结构周期22,所述第一孔径111的长度,所述第二孔径112的长度,所述第一孔径111与所述第二孔径112的间距,所述第二汇能条13的宽度,其中,所述第二指条14的数量为奇数且大于等于3。
具体的,所述第二指条14所述反射器8的间距23的金属化比和结构周期22,所述第一孔径111的长度为W1,所述第二孔径112的长度为W2,所述第一孔径111与所述第二孔径112的间距为S,所述 第二汇能条13的宽度为Wb。
在本实施例中,所述第三参数化单元3与沿所述第一参数化单元的第二方向设置,所述第三参数化单元3包括相对设置的第三汇能条15、设置在所述第三汇能条15之间的多个第三指条16、分别设置在所述多个第三指条16上的多个孔径以及设置在多个所述孔径上的谐振器;所述孔径包括第一孔径111和与所述第一孔径111对应设置的第二孔径112,所述谐振器包括设置于所述第一孔径111上的第三谐振器123和设置于所述第二孔径112上的第四谐振器124。
其中,所述第三参数化单元3的参数包括:所述多个第三指条16的数量,所述第三指条16与所述反射器的间距23的金属化比和结构周期22,所述第一孔径111的长度,所述第二孔径112的长度,所述第一孔径111与所述第二孔径112的间距,所述汇能条的宽度,所述第三谐振器的三角形底边与所述指条宽度的比值,所述第三谐振器123的三角形的高与所述第三指条16宽度的比值,其中,所述第三指条16的数量为奇数且大于等于3。
具体的,所述第一孔径111的长度为W1,所述第二孔径112的长度为W2,所述第一孔径111与所述第二孔径112的间距为S,所述汇能条9的宽度为Wb,多个所述第三指条16的数量为Nt,所述Nt为奇数且大于等于3,所述第三谐振器123的三角形底边与所述第三指条16宽度的比值为m,所述第三谐振器123的三角形的高与所述第三指条16宽度的比值为n。
具体的,在三角谐振器12的Pcell(参数化单元)基础上,将三角形结构的第三指条16和反射器8的空间间距作为可改变的参数变量置于Pcell模块中;上述三角谐振器12、标准谐振器12两个Pcell模块,其第三指条16和反射器8的间距默认为(1-Metallization Ratio(金属化比例))*Period(周期,时期)。
在本实施例中,所述第四参数化单元4沿所述第三参数化单元3的第一方向间隔设置,所述第四参数化单元4包括相对设置的第四汇 能条17、设置在所述第四汇能条17之间的多个第四指条18以及分别设置在所述多个第四指条18上的多个孔径;所述孔径11包括第一孔径111和与所述第一孔径111对应设置的第二孔径112。
其中,所述第四参数化单元4的参数包括:多个所述第四指条18为奇数且大于等于3,所述第四指条18与所述反射器的间距23,所述第四指条18与所述反射器的间距23的金属化比和结构周期22,所述第一孔径111的长度,所述第二孔径112的长度,所述第一孔径111与所述第二孔径112的间距,所述第四汇能条17的宽度,其中,所述第四指条18的数量为奇数且大于等于3。
具体的,所述第四指条17与所述反射器8的间距23的金属化比和结构周期22,所述第一孔径111的长度为W1,所述第二孔径112的长度为W2,所述第一孔径111与所述第二孔径112的间距为S,所述第四汇能条17的宽度为Wb,所述第四指条17与所述反射器8的间距Gap。
在本实施例中,所述第五参数化单元5沿所述第三参数化单元3的第二方向间隔设置,所述第五参数化单元5包括相对设置的第五汇能条19和设置在所述第五汇能条19之间的多个第五指条20,所述多个第五指条20并列设置。
在本实施例中,所述第六参数化单元6沿所述第四参数化单元的第二方向间隔设置,所述第六参数化单元6包括并列设置的多个第六指条21。
在本实施例中,上述的多个指条21的个数相同,均为7个并列设置的指条10栅。
在本实施例中,其中,Nt:指条栅(IDT)的指条数,整数型,由于IDT是中心轴对称的,所以Nt须为奇数且须≥3,若是偶数,IDT结构将不满足中心轴对称,则会报错,无法生成预期结构图形。可选的,Nt为301。
Ng:反射器8(Reflector)的指条数,整数型,奇偶均可,若将 Resonator的Ng设为0,即生成单IDT结构。可选的,Ng为30。
金属化比(Metallization_Ratio:)a/p,需满足0<a/p<1,否则报错。可选的,金属化比为0.5。
riangle_Ratio1设置时需注意以下两点:
1.无差距(Gap)结构的谐振器12(Resonator)设置:
(Triangle_Ratio1*Metallization_Ratio*Period)/2<(1-Metallization_Ratio)*Period,否则生成预期结构图形时会报错,因为不满足上述条件,会造成IDT中相邻栅指间的短路连接。Triangle_Ratio为三角形结构比,Metallization_Ratio为金属化比,Period为周期。可选的,Period为1um。
2.存在Gap结构的Resonator设置:
(Triangle_Ratio1*Metallization_Ratio*Period)/2<min(Gap,(1-Metallization_Ratio)*Period)),否则生成预期结构图形时会报错,因为不满足上述条件,会造成IDT中相邻栅指间的短路连接。可选的,Triangle_Ratio1为1,Triangle_Ratio2为1。
Wb:Wb<反射器8母线(Reflector Busbar)总长度,否则反射器8母线路径(Reflector Busbar Path)两端的45度切角消失。可选的,Wb为1um。
W1、W2:W1和W2必须≥0,但不能同时为0,否则报错,因为同时为0时,孔径11消失。可选的,W1为36um,W2为2.5um。
以下其余结构参数在设置时只需大于零即可:
Period:结构周期22;
S:第一孔径111与第二孔径112的间距;
Gap:IDT与Reflector的间距,可选的,IDT与Reflector的间距为1um。
Aperture:Reflector中孔径11的长度(Shorted Electrodes,Open-ciucuit Electrodes)。当Pcell参数设置错误时,可以根据提示信息进行修改即可。
本发明还提供一种声表面波滤波器的设计方法,包括步骤:通过 在ADS软件中预设叉指换能器7;在所述预设叉指换能器7上相对设置两个反射器8;并在所述预设叉指换能器7上设计多个参数化单元,其中,该多个参数化单元设置在两个反射器8之间;通过调节多个参数化单元的各个参数,通过集成多个参数单元提高滤波器的整体性能,同时还具有体积小、成本低的效果,使用广泛。
其中,所述多个参数化单元包括相互间隔设置的第一参数化单元1、第二参数化单元2、第三参数化单元3、第四参数化单元4、第五参数化单元5及第六参数化单元6,所述第一参数化单元1、所述第三参数化单元3及所述第五参数化单元5并排设置,所述第二参数化单元2、第四参数化单元4及第六参数化单元6并排设置。
在本实施例中,所述第一参数化单元1包括相对设置的第一汇能条9、设置在所述第一汇能条9之间的多个第一指条10、分别设置在所述多个第一指条10上的多个孔径以及设置在所述多个孔径的谐振器12;所述孔径包括第一孔径111和与所述第一孔径111对应设置的第二孔径112,所述谐振器12包括设置于所述第一孔径111上的第一谐振器121和设置于所述第二孔径112上的第二谐振器122。
其中,所述第一参数化单元1的参数包括:所述多个第一指条10的数量为Nt,所述第一指条10与所述反射器8的间距的金属化比和结构周期22,所述第一孔径111的长度为W1,所述第二孔径112的长度为W2,所述第一孔径111与所述第二孔径112的间距为S,所述汇能条的宽度为Wb,所述第一谐振器121的三角形底边与所述第一指条宽度的比值,所述第一谐振器121的三角形的高与所述第一指条10宽度的比值,其中,所述第一指条10的数量为奇数且大于等于3。通过调节第一参数化单元1、第二参数化单元2、第三参数化单元3、第四参数化单元4、第五参数化单元5及第六参数化单元6上不同的指条、孔径、谐振器以提高声表面波滤波器的整体性能,同时还具有体积小、成本低的效果,使用广泛。
具体的,通过在叉指换能器7上集成至少一个第一参数化单元11, 通过在第一参数化单元11的两侧相对设置反射器8,在第一参数化单元11产生的声表面波通过两侧的反射器8进行反射出去。
具体的,通过第一参数化单元11的第一汇能条9将能量传输到多个第一指条10上,通过第一指条10上的多个孔径11进行传输至谐振器12上,通过谐振器12可以让某段频率信号通过,阻挡其他频率信号,达到选泽的目的,当信号频率和谐振器12固有频率相等时,该信号顺利通过就像通过一个小电阻(或导线)一样,当远离固有谐振频率的频率试图通过它就像一个大阻抗。
具体的,由于所述孔径11包括第一孔径111和与所述第一孔径111对应设置的第二孔径112,所述谐振器12包括设置于所述第一孔径111上的第一谐振器121和设置于所述第二孔径112上的第二谐振器122,通过第一谐振器121和第二谐振器122对应设置进行频率信号阻挡,从而使得孔径11上能通过有效的频率段,进而使得滤波器的性能更高。
与现有技术相比,本发明的声表面波滤波器中,通过在叉指换能器上相对设置的两个反射器以及集成在所述叉指换能器上的至少一个第一参数化单元,将第一参数化单元设置于两个所述反射器之间,所述第一参数化单元的两端与所述反射器的两端平行设置;所述第一参数化单元包括相对设置的汇能条、设置在所述汇能条之间的多个指条、分别设置在多个所述指条上的多个孔径以及设置在多个所述孔径上的谐振器;所述孔径包括第一孔径和与所述第一孔径对应设置的第二孔径,所述谐振器包括设置于所述第一孔径上的第一谐振器和设置于所述第二孔径上的第二谐振器,通过设置不同的指条、孔径、谐振器以提高滤波器的整体性能,同时还具有体积小、成本低的效果,使用广泛。
需要说明的是,以上参照附图所描述的各个实施例仅用以说明本发明而非限制本发明的范围,本领域的普通技术人员应当理解,在不脱离本发明的精神和范围的前提下对本发明进行的修改或者等同替换,均应涵盖在本发明的范围之内。此外,除上下文另有所指外,以 单数形式出现的词包括复数形式,反之亦然。另外,除非特别说明,那么任何实施例的全部或一部分可结合任何其它实施例的全部或一部分来使用。
Claims (12)
- 一种声表面波滤波器,其特征在于,包括:叉指换能器、相对设置于所述叉指换能器两侧的两个反射器、以及集成在所述叉指换能器和所述两个反射器上的多个参数化单元。
- 如权利要求1所述的声表面波滤波器,其特征在于,所述多个参数化单元包括相互间隔设置的第一参数化单元、第二参数化单元、第三参数化单元、第四参数化单元、第五参数化单元及第六参数化单元,所述第一参数化单元、所述第三参数化单元及所述第五参数化单元并排设置,所述第二参数化单元、第四参数化单元及第六参数化单元并排设置。
- 如权利要求2所述的声表面波滤波器,其特征在于,所述第一参数化单元包括相对设置的第一汇能条、设置在所述第一汇能条之间的多个第一指条、分别设置在所述多个第一指条上的多个孔径以及设置在所述多个孔径的谐振器;所述孔径包括第一孔径和与所述第一孔径对应设置的第二孔径,所述谐振器包括设置于所述第一孔径上的第一谐振器和设置于所述第二孔径上的第二谐振器。
- 如权利要求3所述的声表面波滤波器,其特征在于,所述第一参数化单元的参数包括:所述多个第一指条的数量,所述第一指条与所述反射器的间距的金属化比和结构周期,所述第一孔径的长度,所述第二孔径的长度,所述第一孔径与所述第二孔径的间距,所述汇能条的宽度,所述第一谐振器的三角形底边与所述第一指条宽度的比值,所述第一谐振器的三角形的高与所述第一指条宽度的比值,其中,所述第一指条的数量为奇数且大于等于3。
- 如权利要求2所述的声表面波滤波器,其特征在于,所述第二参数化单元与所述第一参数化单元沿所述第一参数化单元的第一方向间隔设置;所述第二参数化单元包括相对设置的第二汇能条、设置在 所述第二汇能条之间的多个第二指条以及分别设置在所述多个第二指条上的多个孔径;所述孔径包括第一孔径和与所述第一孔径对应设置的第二孔径。
- 如权利要求5所述的声表面波滤波器,其特征在于,所述第二参数化单元的参数包括:所述多个第二指条的数量,所述第二指条与所述反射器的间距的金属化比和结构周期,所述第一孔径的长度,所述第二孔径的长度,所述第一孔径与所述第二孔径的间距,所述第二汇能条的宽度,其中,所述第二指条的数量为奇数且大于等于3。
- 如权利要求2所述的声表面波滤波器,其特征在于,所述第三参数化单元与沿所述第一参数化单元的第二方向设置,所述第三参数化单元包括相对设置的第三汇能条、设置在所述第三汇能条之间的多个第三指条、分别设置在所述多个第三指条上的多个孔径以及设置在多个所述孔径上的谐振器;所述孔径包括第一孔径和与所述第一孔径对应设置的第二孔径,所述谐振器包括设置于所述第一孔径上的第三谐振器和设置于所述第二孔径上的第四谐振器。
- 如权利要求7所述的声表面波滤波器,其特征在于,所述第三参数化单元的参数包括:所述多个第三指条的数量,所述第三指条与所述反射器的间距的金属化比和结构周期,所述第一孔径的长度,所述第二孔径的长度,所述第一孔径与所述第二孔径的间距,所述汇能条的宽度,所述第三谐振器的三角形底边与所述第三指条宽度的比值,所述第三谐振器的三角形的高与所述第三指条宽度的比值,其中,所述第三指条的数量为奇数且大于等于3。
- 如权利要求2所述的声表面波滤波器,其特征在于,所述第四参数化单元沿所述第三参数化单元的第一方向间隔设置,所述第四参数化单元包括相对设置的第四汇能条、设置在所述第四汇能条之间的 多个第四指条以及分别设置在所述多个第四指条上的多个孔径;所述孔径包括第一孔径和与所述第一孔径对应设置的第二孔径。
- 如权利要求9所述的声表面波滤波器,其特征在于,所述第四参数化单元的参数包括:多个所述第四指条为奇数且大于等于3,所述第四指条与所述反射器的间距,所述第四指条与所述反射器的间距的金属化比和结构周期,所述第一孔径的长度,所述第二孔径的长度,所述第一孔径与所述第二孔径的间距,所述第四汇能条的宽度,其中,所述第四指条的数量为奇数且大于等于3。
- 如权利要求2所述的声表面波滤波器,其特征在于,所述第五参数化单元沿所述第三参数化单元的第二方向间隔设置,所述第五参数化单元包括相对设置的第五汇能条和设置在所述第五汇能条之间的多个第五指条,所述多个第五指条并列设置。
- 如权利要求2所述的声表面波滤波器,其特征在于,所述第六参数化单元沿所述第四参数化单元的第二方向间隔设置,所述第六参数化单元包括并列设置的多个第六指条。
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