WO2023124352A1 - Testing circuit and method for optical phased array (opa) chip - Google Patents

Testing circuit and method for optical phased array (opa) chip Download PDF

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Publication number
WO2023124352A1
WO2023124352A1 PCT/CN2022/123882 CN2022123882W WO2023124352A1 WO 2023124352 A1 WO2023124352 A1 WO 2023124352A1 CN 2022123882 W CN2022123882 W CN 2022123882W WO 2023124352 A1 WO2023124352 A1 WO 2023124352A1
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voltage signal
electrode
amplifier
chip
laser
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PCT/CN2022/123882
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French (fr)
Chinese (zh)
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赵琦
李毅
邓永强
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武汉万集光电技术有限公司
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Publication of WO2023124352A1 publication Critical patent/WO2023124352A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer

Definitions

  • the present application relates to the field of lidar technology, and in particular to a detection circuit and method for an optical phased array (opatical phased array, OPA) chip.
  • OPA optical phased array
  • the laser radar (lidar) system can realize laser distance measurement and is used in many fields such as machine vision, car assisted driving, video games, medical health, leisure and entertainment, and smart home.
  • the OPA chip has become an important part due to its advantages of high integration and low cost. Therefore, the performance of the OPA chip has a very important impact on the overall performance of the lidar system.
  • related technology 1 it is necessary to change the internal layout design of the OPA chip, add a directional coupler or a wavelength division multiplexer, and separate a part of the laser light to measure the optical power of various levels inside the OPA chip. It can be seen that related technology 1 reduces the energy of the laser light emitted into the OPA chip, affects the light output power of the OPA chip, and restricts the propagation path of the laser light in the OPA chip.
  • This application provides a detection circuit and method for an optical phase array OPA chip, so as to realize the non-destructive detection of the OPA chip without destroying the internal layout design of the OPA chip, saving the cost of detection, and not affecting the performance of the OPA chip.
  • the reliability and safety of the lidar system containing the OPA chip are guaranteed.
  • the present application provides a detection circuit of an optical phase array OPA chip, including: a laser component, a first electrode, a second electrode and a signal processing unit.
  • the first electrode and the second electrode are respectively arranged on the optical phase array OPA chip, the first electrode is used to load an AC voltage signal, and the second electrode is electrically connected to the signal processing unit;
  • the laser component is used to emit laser light of different optical powers to the optical phase array OPA chip, so that the laser passes through the silicon waveguide of the optical phase array OPA chip;
  • a first electrode for transmitting an AC voltage signal into the silicon waveguide
  • the second electrode is used to transmit an alternating current signal to the signal processing unit, wherein the alternating current signal is generated based on a potential difference between the first electrode and the second electrode;
  • the signal processing unit is used to perform signal processing on the AC current signal, and output the processing result, wherein, when it is detected that the processing result indicates that the conductivity of the silicon waveguide changes with the optical power of the laser, determine the optical phase array OPA chip able to work.
  • the laser component emits laser light with different optical power to the OPA chip, so that the laser light with different optical power can flow through the silicon waveguide of the OPA chip, causing the silicon waveguide of the OPA chip to conduct
  • the rate of change varies with the optical power of the laser.
  • the first electrode and the second electrode are respectively arranged on the upper cladding layer of the OPA chip, and after the first electrode is loaded with an AC voltage signal, the AC voltage signal can form an equivalent capacitance between the first electrode and the silicon waveguide of the OPA chip And coupled to the silicon waveguide of the OPA chip, another equivalent capacitance is formed between the second electrode and the silicon waveguide of the OPA chip, and an equivalent resistance is formed in the silicon waveguide of the OPA chip.
  • the AC voltage signal can then flow through the silicon waveguide of the OPA chip and then output the AC current signal through the second electrode.
  • the alternating current signal may represent the variation relationship between the conductivity of the silicon waveguide of the OPA chip and the optical power of the laser.
  • the signal processing unit can process the AC current signal into a processing result that is easier to detect, and output the processing result, so that the processing result can represent the AC current signal and represent the silicon waveguide of the OPA chip.
  • the relationship between the conductivity and the optical power of the laser wherein, when it is detected that the processing result indicates that the conductivity of the silicon waveguide of the OPA chip changes with the optical power of the laser, it can be determined that the OPA chip can work normally.
  • the optical power of the laser is monitored by using the conductivity of the silicon waveguide of the OPA chip, and the non-destructive testing of the OPA chip is realized, which is beneficial to the detection and control of the quality of the OPA chip in the actual production process, and will not damage the OPA chip.
  • the internal layout design of the chip does not need to add additional components inside the OPA chip, nor will it affect the output power and number of light emitting channels of the OPA chip, nor will it affect the propagation path of the laser in the OPA chip, and it can also ensure that it can be realized Multi-channel simultaneous detection of OPA chips (such as fixed interval testing or continuous testing of several channels), so that the tested OPA chips can still be used normally, saving the cost of testing, and ensuring the reliability of the lidar system containing OPA chips and security.
  • the signal processing unit includes: a transimpedance amplifier and a lock-in amplifier;
  • the first end of the transimpedance amplifier is electrically connected to the second electrode
  • the second end of the transimpedance amplifier is electrically connected to the first end of the lock-in amplifier
  • the second end of the lock-in amplifier is used for inputting an AC voltage signal
  • the phase-lock The third terminal and the fourth terminal of the amplifier are used to output the processing result
  • transimpedance amplifier used to convert the alternating current signal into a first voltage signal, and transmit the first voltage signal to the lock-in amplifier
  • a lock-in amplifier configured to frequency shift the first voltage signal and the AC voltage signal to obtain a second voltage signal and a third voltage signal
  • the lock-in amplifier is also used to filter the second voltage signal, and output the filtered second voltage signal, filter the third voltage signal, and output the filtered third voltage signal, wherein, after detecting the filtered
  • the amplitude difference between the second voltage signal and the filtered third voltage signal is a fixed value as the optical power of the laser remains constant, and changes as the optical power of the laser changes, it is determined that the silicon waveguide The conductivity of the laser varies with the optical power of the laser.
  • the signal processing unit can process the AC current signal into a processing result that is easier to detect, which is convenient for non-destructive testing of the OPA chip, and is also conducive to improving the efficiency and accuracy of the non-destructive testing of the OPA chip.
  • the lock-in amplifier is specifically used to multiply the first voltage signal and the AC voltage signal to obtain the second voltage signal; multiply the first voltage signal and the AC voltage signal whose phase is reversed by 90 degrees, Obtain a third voltage signal.
  • the laser component is specifically configured to emit laser light with different optical powers to the optical phase array OPA chip by adjusting at least one parameter of light intensity, frequency or phase of the laser light.
  • the manner in which the first electrode and the second electrode are separately arranged on the optical phase array OPA chip includes:
  • the first electrode and the second electrode can be used as monitoring points for the detection circuit of the OPA chip to detect whether the OPA chip can work normally. Therefore, the detection circuit of the OPA chip can detect whether any position/module in the OPA chip can work normally by means of the first electrode and the second electrode.
  • the present application provides a detection method of an optical phase array OPA chip, which is applied to a detection device of an optical phase array OPA chip, and the device includes: a laser component, a first electrode, a second electrode and a signal processing unit; wherein , the first electrode and the second electrode are respectively arranged on the optical phase array OPA chip, the first electrode is used to load an AC voltage signal, and the second electrode is electrically connected to the signal processing unit;
  • the method includes:
  • the laser component emits laser light with different optical powers to the optical phase array OPA chip, so that the laser light passes through the silicon waveguide of the optical phase array OPA chip;
  • the first electrode transmits the AC voltage signal into the silicon waveguide
  • the second electrode transmits an alternating current signal to the signal processing unit, wherein the alternating current signal is generated based on a potential difference between the first electrode and the second electrode;
  • the signal processing unit performs signal processing on the AC current signal, and outputs the processing result, wherein, when the detection processing result indicates that the conductivity of the silicon waveguide changes with the optical power of the laser, it is determined that the optical phase array OPA chip can work normally .
  • the signal processing unit includes: a transimpedance amplifier and a lock-in amplifier; wherein, the first terminal of the transimpedance amplifier is electrically connected to the second electrode, and the second terminal of the transimpedance amplifier is electrically connected to the first terminal of the lock-in amplifier. One end is electrically connected, the second end of the lock-in amplifier is used to input the AC voltage signal, and the third end and the fourth end of the lock-in amplifier are used to output the processing result;
  • the signal processing unit performs signal processing on the AC current signal and outputs the processing results, including:
  • the transimpedance amplifier converts the AC current signal into a first voltage signal, and transmits the first voltage signal to the lock-in amplifier;
  • the lock-in amplifier performs frequency migration on the first voltage signal and the AC voltage signal to obtain a second voltage signal and a third voltage signal;
  • the lock-in amplifier filters the second voltage signal, and outputs the filtered second voltage signal, filters the third voltage signal, and outputs the filtered third voltage signal, wherein, after detecting the filtered second voltage
  • the amplitude difference between the signal and the filtered third voltage signal is constant as the optical power of the laser remains constant, and changes as the optical power of the laser changes, it is determined that the conductivity of the silicon waveguide varies with It changes with the change of the optical power of the laser.
  • the lock-in amplifier performs frequency shift on the first voltage signal and the AC voltage signal to obtain the second voltage signal and the third voltage signal, including:
  • the lock-in amplifier multiplies the first voltage signal and the AC voltage signal to obtain a second voltage signal
  • the lock-in amplifier multiplies the first voltage signal and the AC voltage signal whose phase is reversed by 90 degrees to obtain a third voltage signal.
  • the laser component emits laser light with different optical powers to the optical phase array OPA chip, including:
  • the laser component emits laser light with different optical powers to the optical phase array OPA chip by adjusting at least one parameter of the light intensity, frequency or phase of the laser light.
  • the manner in which the first electrode and the second electrode are separately arranged on the optical phase array OPA chip includes:
  • Fig. 1 is the structural representation of the detection circuit of a kind of OPA chip that an embodiment of the present application provides;
  • Fig. 2 is the schematic flow chart of the detection method of a kind of OPA chip that an embodiment of the present application provides;
  • FIG. 3 is a schematic structural diagram of a signal processing unit provided by an embodiment of the present application.
  • FIG. 4 is a schematic flowchart of a detection method for an OPA chip provided by an embodiment of the present application.
  • 21 upper cladding
  • 22 silicon waveguide
  • 23 lower cladding
  • 24 substrate
  • C1 first equivalent capacitance
  • C2 second equivalent capacitance
  • R1 Equivalent resistance
  • I AC current signal
  • R2 feedback resistor
  • A operational amplifier
  • L low-pass filter
  • V1 the first voltage signal
  • V2 the second voltage signal
  • V3 the third voltage signal
  • V4 filtered second voltage signal
  • V5 filtered third voltage signal
  • At least one means one or more, and “multiple” means two or more.
  • “And/or” describes the association relationship of associated objects, indicating that there may be three types of relationships, for example, A and/or B, which can mean: A exists alone, A and B exist at the same time, and B exists alone, where A, B can be singular or plural.
  • the character “/” generally indicates that the contextual objects are an “or” relationship.
  • “At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items.
  • At least one item (unit) of a, b or c alone may mean: a alone, b alone, c alone, a combination of a and b, a combination of a and c, a combination of b and c, or a combination of a, b and c, where a, b, c can be single or multiple.
  • first and second are used for descriptive purposes only, and should not be understood as indicating or implying relative importance. The orientation or positional relationship indicated by the terms “center”, “longitudinal”, “transverse”, “upper”, “lower”, “left”, “right”, “front”, “rear” etc.
  • the electrical conductivity of an optical waveguide of an optical device changes as the incident light power changes.
  • the OPA chip is an optical device
  • the conductivity of the silicon waveguide of the OPA chip will change with the optical power of the laser passing through the silicon waveguide of the OPA chip
  • the conductivity of the silicon waveguide of the OPA chip will change with the change of the optical power of the laser passing through the silicon waveguide of the OPA chip.
  • the optical power of the laser in the silicon waveguide of the OPA chip remains constant and does not change.
  • the present application provides a detection circuit and method of an OPA chip, which monitors the change of the optical power of the laser passing through the silicon waveguide of the OPA chip by means of the change of the conductivity of the silicon waveguide of the OPA chip, and can identify whether the OPA chip is It can work normally and achieve the purpose of non-destructive testing of OPA chips without destroying the internal layout design of OPA chips, so that the tested OPA chips can still be used normally without affecting the performance of OPA chips, avoiding waste of resources and ensuring Reliability and security of lidar systems incorporating OPA chips.
  • FIG. 1 is a schematic structural diagram of a detection circuit of an OPA chip provided by an embodiment of the present application.
  • the detection circuit 1 of the OPA chip may include: a laser component 11 , a first electrode 12 , a second electrode 13 and a signal processing unit 14 .
  • the laser assembly 11 can provide laser light of various optical powers.
  • the present application does not limit the manner in which the laser component 11 provides laser light and the specific magnitude of the optical power of the laser light.
  • the laser component 11 can provide laser light with various optical powers by adjusting the parameters of the laser light.
  • the present application does not limit the specific implementation manner of the laser component 11 .
  • the laser component 11 may include: a laser emitter and a controller.
  • the controller can adjust the parameters of the laser light emitted by the laser emitter, so that the laser emitter can emit laser light with various optical powers.
  • the above-mentioned parameters of the laser may include but not limited to at least one parameter of light intensity, frequency or phase, as long as the parameter is satisfied, the optical power of the laser can be adjusted.
  • the first electrode 12 and the second electrode 13 are respectively arranged on the OPA chip 2, so that both the first electrode 12 and the second electrode 13 are in electrical contact with the OPA chip 2.
  • the present application does not limit the specific implementation manner of the OPA chip 2 .
  • the OPA chip 2 may include: an end coupler, a phase shifter and an antenna.
  • the end face coupler is used to transmit the input laser light to the phase shifter.
  • Phase shifter used to control the relative phase of the antenna.
  • the phase shifter may include: a multi-stage multi-mode inferometer (MMI), and the multi-stage MMI may be electrically connected in cascade.
  • MMI multi-stage multi-mode inferometer
  • the module can include the following structure:
  • the structure may include: an upper cladding layer 21 , a silicon waveguide 22 , a lower cladding layer 23 and a substrate 24 stacked in sequence.
  • the structure may include: an upper cladding layer 21 , a silicon waveguide 22 and a substrate 24 stacked in sequence.
  • the conductivity of the upper cladding layer 21 or the lower cladding layer 23 is poor or non-conductive and has a low light absorption rate to a laser of a certain wavelength band, such as silicon dioxide (SiO2), silicon nitride, silicon oxygen nitrogen, etc.
  • a laser of a certain wavelength band such as silicon dioxide (SiO2), silicon nitride, silicon oxygen nitrogen, etc.
  • the silicon waveguide 22 can use silicon material.
  • both the first electrode 12 and the second electrode 13 are located on the upper cladding layer 21 .
  • the silicon waveguide 22 has a good confinement ability for laser light, and the present application does not limit the specific implementation manner of the silicon waveguide 22 .
  • the substrate 24 has a certain mechanical strength, and the present application does not limit the specific implementation manner of the substrate 24 .
  • the first electrode 12 and the second electrode 13 can be located on the upper cladding layer 21 of the OPA chip 2 respectively, and its specific implementation can include: the output side of the end face coupler, the MMI of each stage At least one of the upper and lower arms, the upper and lower arms of the final stage MMI, or the input side of the antenna.
  • the detection circuit 1 of the OPA chip can detect whether the end coupler in the OPA chip 2 can work normally.
  • the detection circuit 1 of the OPA chip can detect whether each stage of the MMI of the phase shifter in the OPA chip 2 can work normally.
  • the upper arm and the lower arm of each level of MMI need to keep the same phase, which is beneficial for the corresponding MMI to receive the maximum energy, and is beneficial for detecting whether the phase shifter in the OPA chip 2 is working to the best state.
  • the detection circuit 1 of the OPA chip can detect whether all the modules containing the final MMI before the final MMI in the OPA chip 2 are able to work.
  • the detection circuit 1 of the OPA chip can also measure the power at one end of the equal optical path.
  • the detection circuit 1 of the OPA chip can detect whether the antenna in the OPA chip 2 can work normally.
  • the detection circuit 1 of the OPA chip can also calibrate the power input to the antenna in the OPA chip 2 .
  • the detection circuit 1 of the OPA chip subtracts the aforementioned power from the power at one end of the equal optical path mentioned above to calculate the loss caused by the equal optical path.
  • the first electrode 12 and the second electrode 13 can be used as monitoring points for the detection circuit 1 of the OPA chip to detect whether the OPA chip 2 can work normally. Thereby, the detection circuit 1 of the OPA chip can detect whether any position/module in the OPA chip 2 can work normally by means of the first electrode 12 and the second electrode 13.
  • the first electrode 12 can be loaded with an AC voltage signal Ve through an AC power source.
  • the present application does not limit the specific implementation manner of the first electrode 12 .
  • the first electrode 12 has conductivity and can be made of metal material.
  • the present application does not limit the specific magnitude of the AC voltage signal Ve, as long as the AC voltage signal Ve is an AC current.
  • the second electrode 13 is electrically connected to the signal processing unit 14 , so that the second electrode 13 can transmit a corresponding signal to the signal processing unit 14 .
  • the signal processing unit 14 can perform signal processing on the corresponding signal.
  • the present application does not limit the specific implementation manners of the second electrode 13 and the signal processing unit 14 .
  • the second electrode 13 has conductivity and can be made of a metal material.
  • the signal processing unit 14 may use an integrated chip, or a circuit composed of multiple components, or the above two methods, which are not limited in this application.
  • FIG. 2 is a schematic flowchart of an OPA chip detection method provided by an embodiment of the present application.
  • the detection method of the OPA chip of the present application can include:
  • the laser component emits laser light with different optical powers to the optical phase array OPA chip, so that the laser light passes through the silicon waveguide of the optical phase array OPA chip.
  • the laser component 11 can emit laser light of different optical powers to the OPA chip 2 by means such as light, so that the laser light of each optical power can pass through the silicon waveguide 22 of the OPA chip 2 .
  • the electrical conductivity of the silicon waveguide 22 can change accordingly, and the optical power of the laser can be monitored by using the change of the electrical conductivity of the silicon waveguide 22 .
  • the optical power of the laser light mentioned in this application may refer to the optical power of the laser light emitted by the laser component 11 , or the optical power of the laser light coupled into the silicon waveguide 22 .
  • the first electrode transmits the AC voltage signal to the silicon waveguide.
  • the first electrode 12 can transmit the AC voltage signal Ve to the silicon waveguide 22 of the OPA chip 2 .
  • the AC voltage signal Ve is an AC signal with frequency f applied to the first electrode 12 .
  • the OPA chip 2 at least includes a stacked upper cladding layer 21 and a silicon waveguide 22 , and the first electrode 12 and the second electrode 13 are respectively disposed on the upper cladding layer 21 . Therefore, the AC voltage signal Ve can form a first equivalent capacitance C1 between the first electrode 12 and the silicon waveguide 22 and be coupled into the silicon waveguide 22, and form a second equivalent capacitance between the second electrode 13 and the silicon waveguide 22 C2, and an equivalent resistance R1 is formed in the silicon waveguide 22.
  • the first end of the first equivalent capacitor C1 is electrically connected to the first electrode 12
  • the second end of the first equivalent capacitor C1 is electrically connected to the first end of the equivalent resistor R1
  • the second end of the second equivalent capacitor C2 One end is electrically connected to the second electrode 13 and the second end of the second equivalent capacitor C2 is electrically connected to the second end of the equivalent resistor R1.
  • the first equivalent capacitance C1 and the second equivalent capacitance C2 are coupling capacitances between the upper cladding layer 21 and the silicon waveguide 22 inside the OPA chip 2 .
  • the equivalent resistance R1 is the resistance value of the silicon waveguide 22 inside the OPA chip 2 .
  • the resistance value of the equivalent resistance R1 is related to the width, length, height and conductivity of the silicon waveguide 22 .
  • the first equivalent capacitance C1, the second equivalent voltage C2, and the equivalent resistance R1 are not real components, but are based on the first electrode 12, the second electrode 13, and the upper cladding layer of the OPA chip 2. 21. It is formed by the silicon waveguide 22 of the OPA chip 2 and the AC voltage signal Ve.
  • the second electrode transmits an AC current signal to the signal processing unit, wherein the AC current signal is generated based on a potential difference between the first electrode and the second electrode.
  • the second electrode 13 can output the AC current signal I.
  • the AC current signal I is a current signal flowing through the silicon waveguide 22 of the OPA chip 2
  • the AC current signal I is generated based on the potential difference between the first electrode 12 and the second electrode 13 .
  • the second electrode 13 Since the second electrode 13 is electrically connected to the signal processing unit 14 . Therefore, the second electrode 13 can transmit the AC current signal I to the signal processing unit 14 .
  • the AC current signal I can vary with the optical power of the laser light passing through the silicon waveguide 22 of the OPA chip 2, that is, the AC current signal I can represent the relationship between the electrical conductivity of the silicon waveguide 22 of the OPA chip 2 and the optical power of the laser light. relationship between changes.
  • the signal processing unit performs signal processing on the AC current signal, and outputs the processing result, wherein, when it is detected that the processing result indicates that the conductivity of the silicon waveguide changes with the optical power of the laser, it is determined that the optical phase array OPA chip can normal work.
  • the signal processing unit 14 may perform signal processing on the AC current signal I such as signal conversion, spectrum shift, and noise filtering to obtain a processing result and output the processing result.
  • the processing result may represent the AC current signal I and represent the variation relationship between the conductivity of the silicon waveguide 22 of the OPA chip 2 and the optical power of the laser.
  • the change of the optical power of the laser light passing through the silicon waveguide 22 of the OPA chip 2 can be detected, so as to realize the detection of the OPA chip 2 .
  • the detection circuit of the OPA chip provided by this application transmits laser light with different optical powers to the OPA chip through the laser component, so that the laser light with different optical powers can flow through the silicon waveguide of the OPA chip, causing the change of the conductivity of the silicon waveguide of the OPA chip with The change of the optical power of the laser.
  • the first electrode and the second electrode are respectively arranged on the upper cladding layer of the OPA chip, and after the first electrode is loaded with an AC voltage signal, the AC voltage signal can form an equivalent capacitance between the first electrode and the silicon waveguide of the OPA chip And coupled to the silicon waveguide of the OPA chip, another equivalent capacitance is formed between the second electrode and the silicon waveguide of the OPA chip, and an equivalent resistance is formed in the silicon waveguide of the OPA chip.
  • the AC voltage signal can then flow through the silicon waveguide of the OPA chip and then output the AC current signal through the second electrode.
  • the alternating current signal may represent the variation relationship between the conductivity of the silicon waveguide of the OPA chip and the optical power of the laser.
  • the signal processing unit can process the AC current signal into a processing result that is easier to detect, and output the processing result, so that the processing result can represent the AC current signal and represent the silicon waveguide of the OPA chip.
  • the relationship between the conductivity and the optical power of the laser wherein, when it is detected that the processing result indicates that the conductivity of the silicon waveguide of the OPA chip changes with the optical power of the laser, it can be determined that the OPA chip can work normally.
  • the optical power of the laser is monitored by using the conductivity of the silicon waveguide of the OPA chip, and the non-destructive testing of the OPA chip is realized, which is beneficial to the detection and control of the quality of the OPA chip in the actual production process, and will not damage the OPA chip.
  • the internal layout design of the chip does not need to add additional components inside the OPA chip, nor will it affect the output power and number of light emitting channels of the OPA chip, nor will it affect the propagation path of the laser in the OPA chip, and it can also ensure that it can be realized Multi-channel simultaneous detection of OPA chips (such as fixed interval testing or continuous testing of several channels), so that the tested OPA chips can still be used normally, saving the cost of testing, and ensuring the reliability of the lidar system containing OPA chips and security.
  • the signal processing unit 14 may include multiple implementations, so that the signal processing unit 14 can process the AC current signal I as a processing result, and also make the processing result represent the AC current signal I to represent the silicon waveguide 22 of the OPA chip 2.
  • the changing relationship between the conductivity and the optical power of the laser also makes it easier for the user to detect the processing results.
  • FIG. 3 is a schematic structural diagram of a signal processing unit provided by an embodiment of the present application.
  • the OPA chip 2 adopts a structure including an upper cladding layer 21 , a silicon waveguide 22 , a lower cladding layer 23 and a substrate 24 stacked in sequence for illustration.
  • the signal processing unit 14 of the present application may include: a transimpedance amplifier (TIA) 141 and a lock-in amplifier 142 .
  • TIA transimpedance amplifier
  • lock-in amplifier 142 the signal processing unit 14 of the present application may include: a transimpedance amplifier (TIA) 141 and a lock-in amplifier 142 .
  • the first end of the transimpedance amplifier 141 is electrically connected to the second electrode 13
  • the second end of the transimpedance amplifier 141 is electrically connected to the first end of the lock-in amplifier 142
  • the second end of the lock-in amplifier 142 is used to input the AC voltage signal Ve
  • the third terminal and the fourth terminal of the lock-in amplifier 142 are used to output the processing result.
  • the transimpedance amplifier 141 is used for converting current into voltage. Wherein, the present application does not limit the specific implementation manner of the transimpedance amplifier 141 .
  • the transimpedance amplifier 141 may include: a feedback resistor R2 and an operational amplifier (opamp) A. Wherein, the feedback resistor R2 is electrically connected between the input terminal and the output terminal of the operational amplifier A.
  • the operational amplifier A also includes a ground terminal and a power supply terminal, which are used to maintain the normal operation of the operational amplifier A.
  • the lock-in amplifier 142 is used to realize signal spectrum shift. Wherein, the present application does not limit the specific implementation manner of the lock-in amplifier 142 .
  • a mixer or a plurality of multipliers may be used to migrate the frequency spectrum of the signal.
  • the lock-in amplifier 142 is also used to filter out noise in the signal. Wherein, the present application does not limit the specific implementation manner of the lock-in amplifier 142 .
  • the lock-in amplifier 142 may use a low-pass filter L to filter out noise in the signal.
  • FIG. 4 is a schematic flowchart of an OPA chip detection method provided by an embodiment of the present application.
  • the detection method of the OPA chip of the present application can comprise:
  • the transimpedance amplifier converts the AC current signal into a first voltage signal, and transmits the first voltage signal to a lock-in amplifier.
  • the transimpedance amplifier 141 can convert the AC current signal I into a first voltage signal V1.
  • the first voltage signal V1 may represent the AC current signal I and represent the relationship between the conductivity of the silicon waveguide 22 of the OPA chip 2 and the optical power of the laser. Thus, the signal conversion of the AC current signal I is realized.
  • the transimpedance amplifier 141 can transmit the first voltage signal V1 to the lock-in amplifier 142 .
  • the lock-in amplifier performs frequency shift on the first voltage signal and the AC voltage signal to obtain a second voltage signal and a third voltage signal.
  • the lock-in amplifier 142 After receiving the first voltage signal V1, the lock-in amplifier 142 can divide the first voltage signal V1 into two paths, and use the AC voltage signal Ve as a modulation signal. The lock-in amplifier 142 can frequency-shift the first voltage signal V1 and the AC voltage signal Ve in the two channels to obtain the second voltage signal V2 and the third voltage signal V3 respectively. Thus, the frequency migration of the signal is completed.
  • the lock-in amplifier 142 can multiply the first voltage signal V1 in one of the channels by the AC voltage signal Ve to obtain the second voltage signal V2.
  • the lock-in amplifier 142 can multiply the first voltage signal V1 in the other channel by the AC voltage signal Ve whose phase is reversed by 90 degrees, to obtain the third voltage signal V3.
  • the lock-in amplifier filters the second voltage signal, and outputs the filtered second voltage signal, filters the third voltage signal, and outputs the filtered third voltage signal, wherein, after the filtered first voltage signal is detected
  • the amplitude difference between the second voltage signal and the filtered third voltage signal is fixed as the optical power of the laser remains constant, and changes as the optical power of the laser changes, determine the conductance of the silicon waveguide The rate varies with the optical power of the laser.
  • the lock-in amplifier 142 After receiving the second voltage signal V2, the lock-in amplifier 142 can filter the second voltage signal V2 and output the filtered second voltage signal V4. After receiving the third voltage signal V3, the lock-in amplifier 142 can filter the third voltage signal V3 and output the filtered third voltage signal V5. Therefore, the noise in the signal is filtered, which is beneficial to the subsequent detection.
  • the amplitude difference between the filtered second voltage signal V4 and the filtered third voltage signal V5 can represent the AC current signal I, which represents the difference between the conductivity of the silicon waveguide 22 of the OPA chip 2 and the optical power of the laser. change relationship.
  • the change of the optical power of the laser light passing through the silicon waveguide 22 of the OPA chip 2 can be detected, and the non-destructive detection of the OPA chip 2 can be realized.
  • the amplitude difference is a fixed value as the optical power of the laser remains constant and changes as the optical power of the laser changes, it can be determined that the electrical conductivity of the silicon waveguide 22 increases with the optical power of the laser. It can also be determined that the OPA chip 2 can work normally.
  • the signal processing unit 14 processes the AC current signal I into a processing result that is easier to detect, which facilitates the non-destructive testing of the OPA chip 2 and helps to improve the efficiency and accuracy of the non-destructive testing of the OPA chip 2 .
  • the processes can be completed by computer programs to instruct related hardware.
  • the programs can be stored in computer-readable storage media.
  • When the programs are executed may include the processes of the foregoing method embodiments.
  • the aforementioned storage medium includes: ROM or random access memory RAM, magnetic disk or optical disk, and other various media that can store program codes.

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Abstract

A testing circuit (1) and method for an optical phased array (OPA) chip. The testing circuit (1) comprises a laser assembly (11), a first electrode (12), a second electrode (13), and a signal processing unit (14); the first electrode (12) and the second electrode (13) are separately arranged on an OPA chip (2), and the second electrode (13) is electrically connected to the signal processing unit (14); the laser assembly (11) is used for emitting laser light of different optical powers to the OPA chip (2); the first electrode (12) is used for transmitting an alternating current (AC) voltage signal to a silicon waveguide (22) of the OPA chip (2); the second electrode (13) is used for transmitting an AC current signal to the signal processing unit (14); the signal processing unit (14) is used for performing signal processing on the AC current signal and outputting a processing result, and when it is detected that the processing result indicates that the electrical conductivity of the silicon waveguide (22) changes along with change of the optical power of the laser light, determining that the OPA chip (2) can work normally. Thus, nondestructive testing of the OPA chip (2) is implemented, the layout design inside the OPA chip (2) is not damaged, the performance of the OPA chip (2) is ensured, and the performance of a lidar system comprising the OPA chip (2) is also ensured.

Description

光学相位阵列OPA芯片的检测电路和方法Detection circuit and method of optical phase array OPA chip
本申请要求于2021年12月31日提交国家知识产权局、申请号为202111677527.4、申请名称为“光学相位阵列OPA芯片的检测电路和方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims the priority of a Chinese patent application filed with the State Intellectual Property Office on December 31, 2021, with application number 202111677527.4, and application title "Detection Circuit and Method for Optical Phased Array OPA Chip", the entire contents of which are incorporated by reference in this application.
技术领域technical field
本申请涉及激光雷达技术领域，尤其涉及一种光学相位阵列(optical phased array，OPA)芯片的检测电路和方法。The present application relates to the field of lidar technology, and in particular to a detection circuit and method for an optical phased array (opatical phased array, OPA) chip.
背景技术Background technique
激光雷达(lidar)***可实现激光测距，应用于机器视觉、汽车辅助驾驶、电子游戏、医疗健康、休闲娱乐、智能家居等诸多领域。在激光雷达***中，OPA芯片由于集成度高和成本低等优势已成为重要的组成部分。因此，OPA芯片的性能对激光雷达***的整体性能起着十分重要的影响。The laser radar (lidar) system can realize laser distance measurement and is used in many fields such as machine vision, car assisted driving, video games, medical health, leisure and entertainment, and smart home. In the lidar system, the OPA chip has become an important part due to its advantages of high integration and low cost. Therefore, the performance of the OPA chip has a very important impact on the overall performance of the lidar system.
目前，可采用多种相关技术对OPA芯片进行检测。At present, a variety of related technologies can be used to detect OPA chips.
相关技术1中，需要改变OPA芯片内部的布局设计，增加定向耦合器，或者波分复用器，分出一部分激光，来测量OPA芯片内部的各级光功率。可见，相关技术1削减了发射到OPA芯片中的激光的能量，影响了OPA芯片的出光功率，约束了OPA芯片中的激光的传播路径。In related technology 1, it is necessary to change the internal layout design of the OPA chip, add a directional coupler or a wavelength division multiplexer, and separate a part of the laser light to measure the optical power of various levels inside the OPA chip. It can be seen that related technology 1 reduces the energy of the laser light emitted into the OPA chip, affects the light output power of the OPA chip, and restricts the propagation path of the laser light in the OPA chip.
相关技术2中，需要改变OPA芯片内部的布局设计，增加光栅耦合器，分出一部分激光，来测量OPA芯片中的天线的出光功率。可见，相关技术2中的部分激光经光栅耦合器输出，而不经天线发出，减少OPA芯片的发光路数，且需要从OPA芯片中选择一路或几路的天线进行测量，选择天线的路数影响着OPA芯片的性能。In related technology 2, it is necessary to change the internal layout design of the OPA chip, add a grating coupler, and separate a part of the laser light to measure the output light power of the antenna in the OPA chip. It can be seen that part of the laser light in the related art 2 is output through the grating coupler instead of the antenna, which reduces the number of light-emitting channels of the OPA chip, and it is necessary to select one or several antennas from the OPA chip for measurement, and select the number of antennas Affects the performance of the OPA chip.
因此，如何实现OPA芯片的无损检测是现亟需一种能够解决的问题。Therefore, how to realize the non-destructive testing of OPA chips is an urgently needed problem that can be solved.
发明内容Contents of the invention
本申请提供一种光学相位阵列OPA芯片的检测电路和方法，以实现OPA芯片的无损检测，且不会破坏OPA芯片内部的布局设计，节省了检测的成本，也不会影响OPA芯片的性能，保证了包含有OPA芯片的激光雷达***的可靠性和安全性。This application provides a detection circuit and method for an optical phase array OPA chip, so as to realize the non-destructive detection of the OPA chip without destroying the internal layout design of the OPA chip, saving the cost of detection, and not affecting the performance of the OPA chip. The reliability and safety of the lidar system containing the OPA chip are guaranteed.
第一方面，本申请提供一种光学相位阵列OPA芯片的检测电路，包括：激光器组件、第一电极、第二电极和信号处理单元。In a first aspect, the present application provides a detection circuit of an optical phase array OPA chip, including: a laser component, a first electrode, a second electrode and a signal processing unit.
其中，第一电极和第二电极分别设置在光学相位阵列OPA芯片上，第一电极用于加载交流电压信号，第二电极与信号处理单元电连接；Wherein, the first electrode and the second electrode are respectively arranged on the optical phase array OPA chip, the first electrode is used to load an AC voltage signal, and the second electrode is electrically connected to the signal processing unit;
激光器组件，用于向光学相位阵列OPA芯片发射不同光功率的激光，以使激光通 过光学相位阵列OPA芯片的硅波导；The laser component is used to emit laser light of different optical powers to the optical phase array OPA chip, so that the laser passes through the silicon waveguide of the optical phase array OPA chip;
第一电极，用于将交流电压信号传输到硅波导中；a first electrode for transmitting an AC voltage signal into the silicon waveguide;
第二电极，用于向信号处理单元传输交流电流信号，其中，交流电流信号是基于第一电极和第二电极之间的电势差产生的；The second electrode is used to transmit an alternating current signal to the signal processing unit, wherein the alternating current signal is generated based on a potential difference between the first electrode and the second electrode;
信号处理单元，用于对交流电流信号进行信号处理，并输出处理结果，其中，在检测到处理结果表示硅波导的电导率随着激光的光功率的变化而变化时，确定光学相位阵列OPA芯片能够正常工作。The signal processing unit is used to perform signal processing on the AC current signal, and output the processing result, wherein, when it is detected that the processing result indicates that the conductivity of the silicon waveguide changes with the optical power of the laser, determine the optical phase array OPA chip able to work.
通过第一方面提供的光学相位阵列OPA芯片的检测电路，激光器组件向OPA芯片发射不同光功率的激光，使得不同光功率的激光能够流经OPA芯片的硅波导，引起OPA芯片的硅波导的电导率的变化随着激光的光功率的变化。第一电极和第二电极分别设置在OPA芯片的上包层上，且在第一电极加载交流电压信号后，交流电压信号可在第一电极与OPA芯片的硅波导之间形成一个等效电容且耦合到OPA芯片的硅波导中，在第二电极与OPA芯片的硅波导之间形成另一个等效电容，且在OPA芯片的硅波导中形成一个等效电阻。交流电压信号便可流经OPA芯片的硅波导后经第二电极输出交流电流信号。其中，交流电流信号可表示OPA芯片的硅波导的电导率与激光的光功率之间的变化关系。基于第二电极与信号处理单元的电连接关系，信号处理单元可将交流电流信号处理成更容易检测的处理结果，并输出处理结果，使得处理结果可代表交流电流信号表示OPA芯片的硅波导的电导率与激光的光功率之间的变化关系。其中，在检测到处理结果表示OPA芯片的硅波导的电导率随着激光的光功率的变化而变化时，便可确定OPA芯片能够正常工作。Through the detection circuit of the optical phase array OPA chip provided in the first aspect, the laser component emits laser light with different optical power to the OPA chip, so that the laser light with different optical power can flow through the silicon waveguide of the OPA chip, causing the silicon waveguide of the OPA chip to conduct The rate of change varies with the optical power of the laser. The first electrode and the second electrode are respectively arranged on the upper cladding layer of the OPA chip, and after the first electrode is loaded with an AC voltage signal, the AC voltage signal can form an equivalent capacitance between the first electrode and the silicon waveguide of the OPA chip And coupled to the silicon waveguide of the OPA chip, another equivalent capacitance is formed between the second electrode and the silicon waveguide of the OPA chip, and an equivalent resistance is formed in the silicon waveguide of the OPA chip. The AC voltage signal can then flow through the silicon waveguide of the OPA chip and then output the AC current signal through the second electrode. Wherein, the alternating current signal may represent the variation relationship between the conductivity of the silicon waveguide of the OPA chip and the optical power of the laser. Based on the electrical connection relationship between the second electrode and the signal processing unit, the signal processing unit can process the AC current signal into a processing result that is easier to detect, and output the processing result, so that the processing result can represent the AC current signal and represent the silicon waveguide of the OPA chip. The relationship between the conductivity and the optical power of the laser. Wherein, when it is detected that the processing result indicates that the conductivity of the silicon waveguide of the OPA chip changes with the optical power of the laser, it can be determined that the OPA chip can work normally.
从而，利用OPA芯片的硅波导的电导率实现激光的光功率的监测，实现了对OPA芯片的无损检测，在实际生产过程中有利于对OPA芯片质量的检测和把控，且不会破坏OPA芯片内部的布局设计，无需在OPA芯片内部中增加额外的元器件，也不会影响OPA芯片的出光功率和发光路数，也不会影响OPA芯片中的激光的传播途径，也可保证能够实现对OPA芯片的多路同时检测(如固定间隔测试或者连续测试几路)，使得检测后的OPA芯片仍可正常使用，节省了检测的成本，保证了包含有OPA芯片的激光雷达***的可靠性和安全性。Therefore, the optical power of the laser is monitored by using the conductivity of the silicon waveguide of the OPA chip, and the non-destructive testing of the OPA chip is realized, which is beneficial to the detection and control of the quality of the OPA chip in the actual production process, and will not damage the OPA chip. The internal layout design of the chip does not need to add additional components inside the OPA chip, nor will it affect the output power and number of light emitting channels of the OPA chip, nor will it affect the propagation path of the laser in the OPA chip, and it can also ensure that it can be realized Multi-channel simultaneous detection of OPA chips (such as fixed interval testing or continuous testing of several channels), so that the tested OPA chips can still be used normally, saving the cost of testing, and ensuring the reliability of the lidar system containing OPA chips and security.
在一种可能的设计中，信号处理单元包括：跨阻放大器和锁相放大器；In a possible design, the signal processing unit includes: a transimpedance amplifier and a lock-in amplifier;
其中，跨阻放大器的第一端与第二电极电连接，跨阻放大器的第二端与锁相放大器的第一端电连接，锁相放大器的第二端用于输入交流电压信号，锁相放大器的第三端和第四端用于输出处理结果；Wherein, the first end of the transimpedance amplifier is electrically connected to the second electrode, the second end of the transimpedance amplifier is electrically connected to the first end of the lock-in amplifier, and the second end of the lock-in amplifier is used for inputting an AC voltage signal, and the phase-lock The third terminal and the fourth terminal of the amplifier are used to output the processing result;
跨阻放大器，用于将交流电流信号转换为第一电压信号，并向锁相放大器传输第一电压信号；a transimpedance amplifier, used to convert the alternating current signal into a first voltage signal, and transmit the first voltage signal to the lock-in amplifier;
锁相放大器，用于对第一电压信号和交流电压信号进行频率迁移，得到第二电压信号和第三电压信号；A lock-in amplifier, configured to frequency shift the first voltage signal and the AC voltage signal to obtain a second voltage signal and a third voltage signal;
锁相放大器，还用于对第二电压信号进行滤波，并输出滤波后的第二电压信号，对第三电压信号进行滤波，并输出滤波后的第三电压信号，其中，在检测到滤波后的第二电压信号与滤波后的第三电压信号之间的幅值差值随着激光的光功率保持不变而为固定值，且随着激光的光功率发生改变而改变时，确定硅波导的电导率随着激光的 光功率的变化而变化。The lock-in amplifier is also used to filter the second voltage signal, and output the filtered second voltage signal, filter the third voltage signal, and output the filtered third voltage signal, wherein, after detecting the filtered When the amplitude difference between the second voltage signal and the filtered third voltage signal is a fixed value as the optical power of the laser remains constant, and changes as the optical power of the laser changes, it is determined that the silicon waveguide The conductivity of the laser varies with the optical power of the laser.
由此，信号处理单元可将交流电流信号处理成了更容易检测的处理结果，方便OPA芯片的无损检测，还有利于提升无损检测OPA芯片的效率和准确率。Therefore, the signal processing unit can process the AC current signal into a processing result that is easier to detect, which is convenient for non-destructive testing of the OPA chip, and is also conducive to improving the efficiency and accuracy of the non-destructive testing of the OPA chip.
在一种可能的设计中，锁相放大器，具体用于将第一电压信号与交流电压信号相乘，得到第二电压信号；将第一电压信号与相位翻转90度的交流电压信号相乘，得到第三电压信号。In a possible design, the lock-in amplifier is specifically used to multiply the first voltage signal and the AC voltage signal to obtain the second voltage signal; multiply the first voltage signal and the AC voltage signal whose phase is reversed by 90 degrees, Obtain a third voltage signal.
由此，有利于后续采用正交分解的方式解析滤波后的第二电压信号和滤波后的第三电压信号。As a result, it is beneficial to analyze the filtered second voltage signal and the filtered third voltage signal in a subsequent orthogonal decomposition manner.
在一种可能的设计中，激光器组件，具体用于通过调整激光的光强、频率或相位中的至少一个参数，向光学相位阵列OPA芯片发射不同光功率的激光。In a possible design, the laser component is specifically configured to emit laser light with different optical powers to the optical phase array OPA chip by adjusting at least one parameter of light intensity, frequency or phase of the laser light.
由此，提供了多种获得不同光功率的激光的实现方式，丰富了不同光功率的激光的获得渠道。As a result, multiple ways of obtaining lasers with different optical powers are provided, which enriches the channels for obtaining lasers with different optical powers.
在一种可能的设计中，第一电极和第二电极分别设置在光学相位阵列OPA芯片上的方式包括：In a possible design, the manner in which the first electrode and the second electrode are separately arranged on the optical phase array OPA chip includes:
光学相位阵列OPA芯片中的端面耦合器的输出侧、每一级多模干涉MMI的上臂和下臂、末级多模干涉MMI的上臂和下臂、或者天线的输入侧中的至少一种。At least one of the output side of the end face coupler in the optical phase array OPA chip, the upper arm and the lower arm of each stage multimode interference MMI, the upper arm and lower arm of the last stage multimode interference MMI, or the input side of the antenna.
由此，第一电极和第二电极可作为OPA芯片的检测电路对OPA芯片是否能够正常工作进行检测的监测点。从而，OPA芯片的检测电路可借助第一电极和第二电极，对OPA芯片中的任意一个位置/模块是否能够正常工作进行检测。Therefore, the first electrode and the second electrode can be used as monitoring points for the detection circuit of the OPA chip to detect whether the OPA chip can work normally. Therefore, the detection circuit of the OPA chip can detect whether any position/module in the OPA chip can work normally by means of the first electrode and the second electrode.
第二方面，本申请提供一种光学相位阵列OPA芯片的检测方法，应用于光学相位阵列OPA芯片的检测方装置，该装置包括：激光器组件、第一电极、第二电极和信号处理单元；其中，第一电极和第二电极分别设置在光学相位阵列OPA芯片上，第一电极用于加载交流电压信号，第二电极与信号处理单元电连接；In a second aspect, the present application provides a detection method of an optical phase array OPA chip, which is applied to a detection device of an optical phase array OPA chip, and the device includes: a laser component, a first electrode, a second electrode and a signal processing unit; wherein , the first electrode and the second electrode are respectively arranged on the optical phase array OPA chip, the first electrode is used to load an AC voltage signal, and the second electrode is electrically connected to the signal processing unit;
该方法包括：The method includes:
激光器组件向光学相位阵列OPA芯片发射不同光功率的激光，以使激光通过光学相位阵列OPA芯片的硅波导；The laser component emits laser light with different optical powers to the optical phase array OPA chip, so that the laser light passes through the silicon waveguide of the optical phase array OPA chip;
第一电极将交流电压信号传输到硅波导中；The first electrode transmits the AC voltage signal into the silicon waveguide;
第二电极向信号处理单元传输交流电流信号，其中，交流电流信号是基于第一电极与第二电极之间的电势差产生的；The second electrode transmits an alternating current signal to the signal processing unit, wherein the alternating current signal is generated based on a potential difference between the first electrode and the second electrode;
信号处理单元对交流电流信号进行信号处理，并输出处理结果，其中，在检测到处理结果表示硅波导的电导率随着激光的光功率的变化而变化时，确定光学相位阵列OPA芯片能够正常工作。The signal processing unit performs signal processing on the AC current signal, and outputs the processing result, wherein, when the detection processing result indicates that the conductivity of the silicon waveguide changes with the optical power of the laser, it is determined that the optical phase array OPA chip can work normally .
在一种可能的设计中，信号处理单元包括：跨阻放大器和锁相放大器；其中，跨阻放大器的第一端与第二电极电连接，跨阻放大器的第二端与锁相放大器的第一端电连接，锁相放大器的第二端用于输入交流电压信号，锁相放大器的第三端和第四端用于输出处理结果；In a possible design, the signal processing unit includes: a transimpedance amplifier and a lock-in amplifier; wherein, the first terminal of the transimpedance amplifier is electrically connected to the second electrode, and the second terminal of the transimpedance amplifier is electrically connected to the first terminal of the lock-in amplifier. One end is electrically connected, the second end of the lock-in amplifier is used to input the AC voltage signal, and the third end and the fourth end of the lock-in amplifier are used to output the processing result;
信号处理单元对交流电流信号进行信号处理，并输出处理结果，包括：The signal processing unit performs signal processing on the AC current signal and outputs the processing results, including:
跨阻放大器将交流电流信号转换为第一电压信号，并向锁相放大器传输第一电压信号；The transimpedance amplifier converts the AC current signal into a first voltage signal, and transmits the first voltage signal to the lock-in amplifier;
锁相放大器对第一电压信号和交流电压信号进行频率迁移，得到第二电压信号和第三电压信号；The lock-in amplifier performs frequency migration on the first voltage signal and the AC voltage signal to obtain a second voltage signal and a third voltage signal;
锁相放大器对第二电压信号进行滤波，并输出滤波后的第二电压信号，对第三电压信号进行滤波，并输出滤波后的第三电压信号，其中，在检测到滤波后的第二电压信号与滤波后的第三电压信号之间的幅值差值随着激光的光功率保持不变而为固定值，且随着激光的光功率发生改变而改变时，确定硅波导的电导率随着激光的光功率的变化而变化。The lock-in amplifier filters the second voltage signal, and outputs the filtered second voltage signal, filters the third voltage signal, and outputs the filtered third voltage signal, wherein, after detecting the filtered second voltage When the amplitude difference between the signal and the filtered third voltage signal is constant as the optical power of the laser remains constant, and changes as the optical power of the laser changes, it is determined that the conductivity of the silicon waveguide varies with It changes with the change of the optical power of the laser.
在一种可能的设计中，锁相放大器对第一电压信号和交流电压信号进行频率迁移，得到第二电压信号和第三电压信号，包括：In a possible design, the lock-in amplifier performs frequency shift on the first voltage signal and the AC voltage signal to obtain the second voltage signal and the third voltage signal, including:
锁相放大器将第一电压信号与交流电压信号相乘，得到第二电压信号；The lock-in amplifier multiplies the first voltage signal and the AC voltage signal to obtain a second voltage signal;
锁相放大器将第一电压信号与相位翻转90度的交流电压信号相乘，得到第三电压信号。The lock-in amplifier multiplies the first voltage signal and the AC voltage signal whose phase is reversed by 90 degrees to obtain a third voltage signal.
在一种可能的设计中，激光器组件向光学相位阵列OPA芯片发射不同光功率的激光，包括：In a possible design, the laser component emits laser light with different optical powers to the optical phase array OPA chip, including:
激光器组件通过调整激光的光强、频率或相位中的至少一个参数，向光学相位阵列OPA芯片发射不同光功率的激光。The laser component emits laser light with different optical powers to the optical phase array OPA chip by adjusting at least one parameter of the light intensity, frequency or phase of the laser light.
在一种可能的设计中，第一电极和第二电极分别设置在光学相位阵列OPA芯片上的方式包括：In a possible design, the manner in which the first electrode and the second electrode are separately arranged on the optical phase array OPA chip includes:
光学相位阵列OPA芯片中的端面耦合器的输出侧、每一级多模干涉MMI的上臂和下臂、末级多模干涉MMI的上臂和下臂、或者天线的输入侧中的至少一种。At least one of the output side of the end face coupler in the optical phase array OPA chip, the upper arm and the lower arm of each stage multimode interference MMI, the upper arm and lower arm of the last stage multimode interference MMI, or the input side of the antenna.
上述第二方面以及上述第二方面的各可能的设计中所提供的光学相位阵列OPA芯片的检测方法，其有益效果可以参见上述第一方面和第一方面的各可能的实施方式所带来的有益效果，在此不再赘述。The above-mentioned second aspect and the detection method of the optical phase array OPA chip provided in the above-mentioned second aspect and each possible design of the above-mentioned second aspect, its beneficial effects can be referred to the above-mentioned first aspect and each possible implementation of the first aspect. Beneficial effects are not repeated here.
附图说明Description of drawings
图1为本申请一实施例提供的一种OPA芯片的检测电路的结构示意图；Fig. 1 is the structural representation of the detection circuit of a kind of OPA chip that an embodiment of the present application provides;
图2为本申请一实施例提供的一种OPA芯片的检测方法的流程示意图；Fig. 2 is the schematic flow chart of the detection method of a kind of OPA chip that an embodiment of the present application provides;
图3为本申请一实施例提供的一种信号处理单元的结构示意图；FIG. 3 is a schematic structural diagram of a signal processing unit provided by an embodiment of the present application;
图4为本申请一实施例提供的一种OPA芯片的检测方法的流程示意图。FIG. 4 is a schematic flowchart of a detection method for an OPA chip provided by an embodiment of the present application.
附图标记说明：Explanation of reference signs:
1—OPA芯片的检测电路；1—the detection circuit of the OPA chip;
11—激光器组件；12—第一电极；13—第二电极；14—信号处理单元；11—laser component; 12—first electrode; 13—second electrode; 14—signal processing unit;
2—OPA芯片；2—OPA chip;
21—上包层；22—硅波导；23—下包层；24—衬底；21—upper cladding; 22—silicon waveguide; 23—lower cladding; 24—substrate;
Ve—交流电压信号；Ve—AC voltage signal;
C1—第一等效电容；C2—第二等效电容；R1—等效电阻；I—交流电流信号；C1—first equivalent capacitance; C2—second equivalent capacitance; R1—equivalent resistance; I—AC current signal;
141—跨阻放大器；142—锁相放大器；141—transimpedance amplifier; 142—lock-in amplifier;
R2—反馈电阻；A—运算放大器；L—低通滤波器；R2—feedback resistor; A—operational amplifier; L—low-pass filter;
V1—第一电压信号；V1—the first voltage signal;
V2—第二电压信号；V3—第三电压信号；V2—the second voltage signal; V3—the third voltage signal;
V4—滤波的第二电压信号；V5—滤波的第三电压信号。V4—filtered second voltage signal; V5—filtered third voltage signal.
具体实施方式Detailed ways
本申请中，“至少一个”是指一个或者多个，“多个”是指两个或两个以上。“和/或”，描述关联对象的关联关系，表示可以存在三种关系，例如，A和/或B，可以表示：单独存在A，同时存在A和B，单独存在B的情况，其中A，B可以是单数或者复数。字符“/”一般表示前后关联对象是一种“或”的关系。“以下至少一项(个)”或其类似表达，是指的这些项中的任意组合，包括单项(个)或复数项(个)的任意组合。例如，单独a，单独b或单独c中的至少一项(个)，可以表示：单独a，单独b，单独c，组合a和b，组合a和c，组合b和c，或组合a、b和c，其中a，b，c可以是单个，也可以是多个。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。术语“中心”、“纵向”、“横向”、“上”、“下”、“左”、“右”、“前”、“后”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。In this application, "at least one" means one or more, and "multiple" means two or more. "And/or" describes the association relationship of associated objects, indicating that there may be three types of relationships, for example, A and/or B, which can mean: A exists alone, A and B exist at the same time, and B exists alone, where A, B can be singular or plural. The character "/" generally indicates that the contextual objects are an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one item (unit) of a, b or c alone may mean: a alone, b alone, c alone, a combination of a and b, a combination of a and c, a combination of b and c, or a combination of a, b and c, where a, b, c can be single or multiple. In addition, the terms "first" and "second" are used for descriptive purposes only, and should not be understood as indicating or implying relative importance. The orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "upper", "lower", "left", "right", "front", "rear" etc. are based on those shown in the drawings Orientation or positional relationship is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application.
通常，光学器件的光波导(optical wave guide)的电导率会随着入射光功率的变化而改变。可见，OPA芯片作为一种光学器件，OPA芯片的硅波导的电导率会随着通过OPA芯片的硅波导的激光的光功率的变化而改变，且OPA芯片的硅波导的电导率会随着通过OPA芯片的硅波导的激光的光功率保持不变的而不发生改变。Typically, the electrical conductivity of an optical waveguide of an optical device changes as the incident light power changes. It can be seen that the OPA chip is an optical device, the conductivity of the silicon waveguide of the OPA chip will change with the optical power of the laser passing through the silicon waveguide of the OPA chip, and the conductivity of the silicon waveguide of the OPA chip will change with the change of the optical power of the laser passing through the silicon waveguide of the OPA chip. The optical power of the laser in the silicon waveguide of the OPA chip remains constant and does not change.
基于上述描述，本申请提供一种OPA芯片的检测电路和方法，借助OPA芯片的硅波导的电导率的变化来监测通过OPA芯片的硅波导的激光的光功率的变化，可甄别出OPA芯片是否能够正常工作，达到无损检测OPA芯片的目的，且不会破坏OPA芯片内部的布局设计，使得检测后的OPA芯片仍可正常使用，也不会影响OPA芯片的性能，避免了资源浪费，保证了包含有OPA芯片的激光雷达***的可靠性和安全性。Based on the above description, the present application provides a detection circuit and method of an OPA chip, which monitors the change of the optical power of the laser passing through the silicon waveguide of the OPA chip by means of the change of the conductivity of the silicon waveguide of the OPA chip, and can identify whether the OPA chip is It can work normally and achieve the purpose of non-destructive testing of OPA chips without destroying the internal layout design of OPA chips, so that the tested OPA chips can still be used normally without affecting the performance of OPA chips, avoiding waste of resources and ensuring Reliability and security of lidar systems incorporating OPA chips.
下面，结合具体的实施例，分别对本申请的OPA芯片的检测电路和方法的具体实现方式进行详细说明。In the following, specific implementations of the detection circuit and method of the OPA chip of the present application will be described in detail in combination with specific embodiments.
请参阅图1，图1为本申请一实施例提供的一种OPA芯片的检测电路的结构示意图。Please refer to FIG. 1 . FIG. 1 is a schematic structural diagram of a detection circuit of an OPA chip provided by an embodiment of the present application.
如图1所示，OPA芯片的检测电路1可以包括：激光器组件11、第一电极12、第二电极13和信号处理单元14。As shown in FIG. 1 , the detection circuit 1 of the OPA chip may include: a laser component 11 , a first electrode 12 , a second electrode 13 and a signal processing unit 14 .
激光器组件11可提供各种光功率的激光。The laser assembly 11 can provide laser light of various optical powers.
其中，本申请对激光器组件11提供激光的方式以及激光的光功率的具体大小不做限定。在一些实施例中，激光器组件11通过调整激光的参数，可提供各种光功率的激光。Wherein, the present application does not limit the manner in which the laser component 11 provides laser light and the specific magnitude of the optical power of the laser light. In some embodiments, the laser component 11 can provide laser light with various optical powers by adjusting the parameters of the laser light.
其中，本申请对激光器组件11的具体实现方式不做限定。例如，激光器组件11中可以包括：激光发射器和控制器。其中，控制器可调整激光发射器发射的激光的参数，使得激光发射器能够发射各种光功率的激光。Wherein, the present application does not limit the specific implementation manner of the laser component 11 . For example, the laser component 11 may include: a laser emitter and a controller. Wherein, the controller can adjust the parameters of the laser light emitted by the laser emitter, so that the laser emitter can emit laser light with various optical powers.
其中，上述提及的激光的参数可包括但不限于光强、频率或相位中的至少一个参数，只需满足该参数能够调整激光的光功率即可。Wherein, the above-mentioned parameters of the laser may include but not limited to at least one parameter of light intensity, frequency or phase, as long as the parameter is satisfied, the optical power of the laser can be adjusted.
第一电极12和第二电极13分别设置在OPA芯片2上，使得第一电极12和第二电极 13均与OPA芯片2电接触。The first electrode 12 and the second electrode 13 are respectively arranged on the OPA chip 2, so that both the first electrode 12 and the second electrode 13 are in electrical contact with the OPA chip 2.
其中，本申请对OPA芯片2的具体实现方式不做限定。在一些实施例中，OPA芯片2中可以包括：端面耦合器、移相器以及天线。Wherein, the present application does not limit the specific implementation manner of the OPA chip 2 . In some embodiments, the OPA chip 2 may include: an end coupler, a phase shifter and an antenna.
其中，端面耦合器，用于将输入的激光传输给移相器。移相器，用于控制天线的相对相位。移相器可包括：多级多模干涉器(multi-mode inferometer，MMI)，且多级MMI可采用级联的电连接方式。天线，用于将激光发射(或耦合)到自由空间，或者从自由空间发射(或耦合)激光。Among them, the end face coupler is used to transmit the input laser light to the phase shifter. Phase shifter, used to control the relative phase of the antenna. The phase shifter may include: a multi-stage multi-mode inferometer (MMI), and the multi-stage MMI may be electrically connected in cascade. Antenna for launching (or coupling) laser light into free space, or launching (or coupling) laser light from free space.
其中，本申请对OPA芯片2中的各个模块的具体实现方式不做限定。Wherein, the present application does not limit the specific implementation manner of each module in the OPA chip 2 .
针对OPA芯片2中任意一个模块而言，该模块可包括如下结构：For any module in the OPA chip 2, the module can include the following structure:
在一些实施例中，该结构可以包括：依次叠放的上包层21、硅波导22、下包层23和衬底24。In some embodiments, the structure may include: an upper cladding layer 21 , a silicon waveguide 22 , a lower cladding layer 23 and a substrate 24 stacked in sequence.
或者，该结构可以包括：依次叠放的上包层21、硅波导22和衬底24。Alternatively, the structure may include: an upper cladding layer 21 , a silicon waveguide 22 and a substrate 24 stacked in sequence.
其中，上包层21或下包层23的导电性较差或不导电以及对某一波段的激光的吸光率低，可采用如二氧化硅(SiO2)、氮化硅、硅氧氮等中的至少一种材料，硅波导22可采用硅材料。Wherein, the conductivity of the upper cladding layer 21 or the lower cladding layer 23 is poor or non-conductive and has a low light absorption rate to a laser of a certain wavelength band, such as silicon dioxide (SiO2), silicon nitride, silicon oxygen nitrogen, etc. At least one material, the silicon waveguide 22 can use silicon material.
可见，第一电极12与第二电极13均位于上包层21上。It can be seen that both the first electrode 12 and the second electrode 13 are located on the upper cladding layer 21 .
其中，硅波导22对激光具有良好的束缚能力，本申请对硅波导22的具体实现方式不做限定。Wherein, the silicon waveguide 22 has a good confinement ability for laser light, and the present application does not limit the specific implementation manner of the silicon waveguide 22 .
其中，衬底24具有一定的机械强度，本申请对衬底24的具体实现方式不做限定。Wherein, the substrate 24 has a certain mechanical strength, and the present application does not limit the specific implementation manner of the substrate 24 .
可见，在OPA芯片2中，第一电极12与第二电极13可分别位于OPA芯片2的上包层21上，其具体的实现方式可以包括：端面耦合器的输出侧、每一级MMI的上臂和下臂、末级MMI的上臂和下臂、或者天线的输入侧中的至少一种。It can be seen that in the OPA chip 2, the first electrode 12 and the second electrode 13 can be located on the upper cladding layer 21 of the OPA chip 2 respectively, and its specific implementation can include: the output side of the end face coupler, the MMI of each stage At least one of the upper and lower arms, the upper and lower arms of the final stage MMI, or the input side of the antenna.
在第一电极12和第二电极13分别位于端面耦合器的输出侧时，OPA芯片的检测电路1可检测出OPA芯片2中的端面耦合器是否能够正常工作。When the first electrode 12 and the second electrode 13 are respectively located at the output side of the end coupler, the detection circuit 1 of the OPA chip can detect whether the end coupler in the OPA chip 2 can work normally.
在第一电极12和第二电极13分别位于每一级MMI的上臂和下臂时，OPA芯片的检测电路1可检测出OPA芯片2中的移相器的每一级MMI是否能够正常工作。When the first electrode 12 and the second electrode 13 are located on the upper arm and the lower arm of each stage of MMI respectively, the detection circuit 1 of the OPA chip can detect whether each stage of the MMI of the phase shifter in the OPA chip 2 can work normally.
其中，每一级MMI的上臂和下臂需要保持相位一致，有利于对应的MMI能够接收最大的能量，有利于检测检验OPA芯片2中的移相器是否工作到了最佳状态。Wherein, the upper arm and the lower arm of each level of MMI need to keep the same phase, which is beneficial for the corresponding MMI to receive the maximum energy, and is beneficial for detecting whether the phase shifter in the OPA chip 2 is working to the best state.
在第一电极12和第二电极13分别位于末级MMI的上臂和下臂时，OPA芯片的检测电路1可检测出OPA芯片2中位于末级MMI之前的包含有末级MMI的所有模块是否能够正常工作。When the first electrode 12 and the second electrode 13 are located at the upper arm and the lower arm of the final MMI respectively, the detection circuit 1 of the OPA chip can detect whether all the modules containing the final MMI before the final MMI in the OPA chip 2 are able to work.
另外，OPA芯片的检测电路1还能够测量等光程光路一端的功率。In addition, the detection circuit 1 of the OPA chip can also measure the power at one end of the equal optical path.
在第一电极12和第二电极13分别位于天线的输入侧时，OPA芯片的检测电路1可检测出OPA芯片2中的天线是否能够正常工作。When the first electrode 12 and the second electrode 13 are respectively located at the input side of the antenna, the detection circuit 1 of the OPA chip can detect whether the antenna in the OPA chip 2 can work normally.
另外，OPA芯片的检测电路1还可标定输入到OPA芯片2中的天线的功率。且OPA芯片的检测电路1将前述功率与前文提及的等光程光路一端的功率相减，可以计算出等光程光路带来的损耗。In addition, the detection circuit 1 of the OPA chip can also calibrate the power input to the antenna in the OPA chip 2 . In addition, the detection circuit 1 of the OPA chip subtracts the aforementioned power from the power at one end of the equal optical path mentioned above to calculate the loss caused by the equal optical path.
综上，第一电极12和第二电极13可作为OPA芯片的检测电路1对OPA芯片2是否能够正常工作进行检测的监测点。从而，OPA芯片的检测电路1可借助第一电极12和第 二电极13，对OPA芯片2中的任意一个位置/模块是否能够正常工作进行检测。To sum up, the first electrode 12 and the second electrode 13 can be used as monitoring points for the detection circuit 1 of the OPA chip to detect whether the OPA chip 2 can work normally. Thereby, the detection circuit 1 of the OPA chip can detect whether any position/module in the OPA chip 2 can work normally by means of the first electrode 12 and the second electrode 13.
需要说明的是，本申请不限于上述设置的方式。It should be noted that the present application is not limited to the above configuration manner.
第一电极12通过交流电源，可加载交流电压信号Ve。其中，本申请对第一电极12的具体实现方式不做限定。例如，第一电极12具有导电性，可采用金属材料。本申请对交流电压信号Ve的具体大小也不做限定，只需满***流电压信号Ve为交流电即可。The first electrode 12 can be loaded with an AC voltage signal Ve through an AC power source. Wherein, the present application does not limit the specific implementation manner of the first electrode 12 . For example, the first electrode 12 has conductivity and can be made of metal material. The present application does not limit the specific magnitude of the AC voltage signal Ve, as long as the AC voltage signal Ve is an AC current.
第二电极13与信号处理单元14电连接，使得第二电极可13向信号处理单元14传输相应的信号。从而，信号处理单元14可对相应的信号进行信号处理。The second electrode 13 is electrically connected to the signal processing unit 14 , so that the second electrode 13 can transmit a corresponding signal to the signal processing unit 14 . Thus, the signal processing unit 14 can perform signal processing on the corresponding signal.
其中，本申请对第二电极13和信号处理单元14的具体实现方式不做限定。例如，第二电极13具有导电性，可采用金属材料。信号处理单元14可采用集成芯片，也可以采用多个元器件组成的电路，也可采用前述两种方式，本申请对此不做限定。Wherein, the present application does not limit the specific implementation manners of the second electrode 13 and the signal processing unit 14 . For example, the second electrode 13 has conductivity and can be made of a metal material. The signal processing unit 14 may use an integrated chip, or a circuit composed of multiple components, or the above two methods, which are not limited in this application.
基于上述描述，结合图2，详细介绍本申请的OPA芯片的检测方法的具体实现方式。Based on the above description and in conjunction with FIG. 2 , a specific implementation of the OPA chip detection method of the present application will be introduced in detail.
请参阅图2，图2为本申请一实施例提供的一种OPA芯片的检测方法的流程示意图。Please refer to FIG. 2 . FIG. 2 is a schematic flowchart of an OPA chip detection method provided by an embodiment of the present application.
如图2所示，本申请的OPA芯片的检测方法可以包括：As shown in Figure 2, the detection method of the OPA chip of the present application can include:
S101、激光器组件向光学相位阵列OPA芯片发射不同光功率的激光，以使激光通过光学相位阵列OPA芯片的硅波导。S101. The laser component emits laser light with different optical powers to the optical phase array OPA chip, so that the laser light passes through the silicon waveguide of the optical phase array OPA chip.
激光器组件11可通过如光线等方式向OPA芯片2发射不同光功率的激光，使得每种光功率的激光能够通过OPA芯片2的硅波导22。The laser component 11 can emit laser light of different optical powers to the OPA chip 2 by means such as light, so that the laser light of each optical power can pass through the silicon waveguide 22 of the OPA chip 2 .
从而，在激光的光功率发生改变时，硅波导22的电导率可随之发生改变，可利用硅波导22的电导率的变化实现激光的光功率的监测。Therefore, when the optical power of the laser changes, the electrical conductivity of the silicon waveguide 22 can change accordingly, and the optical power of the laser can be monitored by using the change of the electrical conductivity of the silicon waveguide 22 .
其中，本申请提及的激光的光功率可指的是激光器组件11发射的激光的光功率，或者耦合到硅波导22中的激光的光功率。Wherein, the optical power of the laser light mentioned in this application may refer to the optical power of the laser light emitted by the laser component 11 , or the optical power of the laser light coupled into the silicon waveguide 22 .
S102、第一电极将交流电压信号传输到硅波导中。S102. The first electrode transmits the AC voltage signal to the silicon waveguide.
在交流电压信号Ve加载到第一电极12上，第一电极12可将交流电压信号Ve传输到OPA芯片2的硅波导22中。其中，交流电压信号Ve为加载到第一电极12上，频率为f的交流信号。When the AC voltage signal Ve is applied to the first electrode 12 , the first electrode 12 can transmit the AC voltage signal Ve to the silicon waveguide 22 of the OPA chip 2 . Wherein, the AC voltage signal Ve is an AC signal with frequency f applied to the first electrode 12 .
由于OPA芯片2中至少包括叠放的上包层21以及硅波导22，且第一电极12和第二电极13分别设置在上包层21上。因此，交流电压信号Ve可在第一电极12与硅波导22之间形成第一等效电容C1并耦合到硅波导22中，在第二电极13与硅波导22之间形成第二等效电容C2，且在硅波导22中形成等效电阻R1。Since the OPA chip 2 at least includes a stacked upper cladding layer 21 and a silicon waveguide 22 , and the first electrode 12 and the second electrode 13 are respectively disposed on the upper cladding layer 21 . Therefore, the AC voltage signal Ve can form a first equivalent capacitance C1 between the first electrode 12 and the silicon waveguide 22 and be coupled into the silicon waveguide 22, and form a second equivalent capacitance between the second electrode 13 and the silicon waveguide 22 C2, and an equivalent resistance R1 is formed in the silicon waveguide 22.
从而，第一等效电容C1的第一端与第一电极12电连接，第一等效电容C1的第二端与等效电阻R1的第一端电连接，第二等效电容C2的第一端与第二电极13电连接，第二等效电容C2的第二端与等效电阻R1的第二端电连接。Therefore, the first end of the first equivalent capacitor C1 is electrically connected to the first electrode 12, the second end of the first equivalent capacitor C1 is electrically connected to the first end of the equivalent resistor R1, and the second end of the second equivalent capacitor C2 One end is electrically connected to the second electrode 13, and the second end of the second equivalent capacitor C2 is electrically connected to the second end of the equivalent resistor R1.
其中，第一等效电容C1和第二等效电容C2为OPA芯片2的内部，上包层21与硅波导22之间的耦合电容。等效电阻R1为OPA芯片2的内部，硅波导22的电阻值。等效电阻R1的电阻值与硅波导22的宽度、长度、高度和电导率有关。Wherein, the first equivalent capacitance C1 and the second equivalent capacitance C2 are coupling capacitances between the upper cladding layer 21 and the silicon waveguide 22 inside the OPA chip 2 . The equivalent resistance R1 is the resistance value of the silicon waveguide 22 inside the OPA chip 2 . The resistance value of the equivalent resistance R1 is related to the width, length, height and conductivity of the silicon waveguide 22 .
需要说明的是，第一等效电容C1、第二等效电压C2和等效电阻R1皆不是真实设置的元器件，是基于第一电极12、第二电极13、OPA芯片2的上包层21、OPA芯片2的硅波导22和交流电压信号Ve形成的。It should be noted that the first equivalent capacitance C1, the second equivalent voltage C2, and the equivalent resistance R1 are not real components, but are based on the first electrode 12, the second electrode 13, and the upper cladding layer of the OPA chip 2. 21. It is formed by the silicon waveguide 22 of the OPA chip 2 and the AC voltage signal Ve.
S103、第二电极向信号处理单元传输交流电流信号，其中，交流电流信号是基于第一 电极与第二电极之间的电势差产生的。S103. The second electrode transmits an AC current signal to the signal processing unit, wherein the AC current signal is generated based on a potential difference between the first electrode and the second electrode.
在交流电压信号Ve流经OPA芯片2的硅波导22后，第二电极13上可输出交流电流信号I。其中，交流电流信号I为流经OPA芯片2的硅波导22的电流信号，交流电流信号I是基于第一电极12与第二电极13之间的电势差产生的。After the AC voltage signal Ve flows through the silicon waveguide 22 of the OPA chip 2 , the second electrode 13 can output the AC current signal I. Wherein, the AC current signal I is a current signal flowing through the silicon waveguide 22 of the OPA chip 2 , and the AC current signal I is generated based on the potential difference between the first electrode 12 and the second electrode 13 .
由于第二电极13与信号处理单元14电连接。因此，第二电极13可将交流电流信号I传输给信号处理单元14。Since the second electrode 13 is electrically connected to the signal processing unit 14 . Therefore, the second electrode 13 can transmit the AC current signal I to the signal processing unit 14 .
在激光的光功率发生改变时，激光通过OPA芯片2的硅波导22，使得OPA芯片2的硅波导22的电导率随之发生改变。因此，交流电流信号I可随着通过OPA芯片2的硅波导22的激光的光功率的变化而变化，即交流电流信号I可表示OPA芯片2的硅波导22的电导率与激光的光功率之间的变化关系。When the optical power of the laser light changes, the laser light passes through the silicon waveguide 22 of the OPA chip 2 , so that the conductivity of the silicon waveguide 22 of the OPA chip 2 changes accordingly. Therefore, the AC current signal I can vary with the optical power of the laser light passing through the silicon waveguide 22 of the OPA chip 2, that is, the AC current signal I can represent the relationship between the electrical conductivity of the silicon waveguide 22 of the OPA chip 2 and the optical power of the laser light. relationship between changes.
S104、信号处理单元对交流电流信号进行信号处理，并输出处理结果，其中，在检测到处理结果表示硅波导的电导率随着激光的光功率的变化而变化时，确定光学相位阵列OPA芯片能够正常工作。S104, the signal processing unit performs signal processing on the AC current signal, and outputs the processing result, wherein, when it is detected that the processing result indicates that the conductivity of the silicon waveguide changes with the optical power of the laser, it is determined that the optical phase array OPA chip can normal work.
考虑到交流电流信号I不容易被检测，信号处理单元14可对交流电流信号I进行如信号转换、频谱迁移、滤除噪声等信号处理，得到处理结果，并输出处理结果。Considering that the AC current signal I is not easy to be detected, the signal processing unit 14 may perform signal processing on the AC current signal I such as signal conversion, spectrum shift, and noise filtering to obtain a processing result and output the processing result.
其中，处理结果可代表交流电流信号I表示OPA芯片2的硅波导22的电导率与激光的光功率之间的变化关系。Wherein, the processing result may represent the AC current signal I and represent the variation relationship between the conductivity of the silicon waveguide 22 of the OPA chip 2 and the optical power of the laser.
从而，通过检测处理结果，可检测通过OPA芯片2的硅波导22的激光的光功率的变化，实现对OPA芯片2的检测。Therefore, by detecting the processing result, the change of the optical power of the laser light passing through the silicon waveguide 22 of the OPA chip 2 can be detected, so as to realize the detection of the OPA chip 2 .
在检测到处理结果表示OPA芯片2的硅波导22的电导率随着激光的光功率的变化而变化时，便可确定OPA芯片2能够正常工作。When it is detected that the processing result shows that the conductivity of the silicon waveguide 22 of the OPA chip 2 changes with the optical power of the laser, it can be determined that the OPA chip 2 can work normally.
在检测到处理结果表示OPA芯片2的硅波导22的电导率随着激光的光功率的变化而未变化时，便可确定OPA芯片2不能正常工作。When it is detected that the processing result shows that the conductivity of the silicon waveguide 22 of the OPA chip 2 does not change with the change of the optical power of the laser, it can be determined that the OPA chip 2 cannot work normally.
本申请提供的OPA芯片的检测电路，通过激光器组件向OPA芯片发射不同光功率的激光，使得不同光功率的激光能够流经OPA芯片的硅波导，引起OPA芯片的硅波导的电导率的变化随着激光的光功率的变化。第一电极和第二电极分别设置在OPA芯片的上包层上，且在第一电极加载交流电压信号后，交流电压信号可在第一电极与OPA芯片的硅波导之间形成一个等效电容且耦合到OPA芯片的硅波导中，在第二电极与OPA芯片的硅波导之间形成另一个等效电容，且在OPA芯片的硅波导中形成一个等效电阻。交流电压信号便可流经OPA芯片的硅波导后经第二电极输出交流电流信号。其中，交流电流信号可表示OPA芯片的硅波导的电导率与激光的光功率之间的变化关系。基于第二电极与信号处理单元的电连接关系，信号处理单元可将交流电流信号处理成更容易检测的处理结果，并输出处理结果，使得处理结果可代表交流电流信号表示OPA芯片的硅波导的电导率与激光的光功率之间的变化关系。其中，在检测到处理结果表示OPA芯片的硅波导的电导率随着激光的光功率的变化而变化时，便可确定OPA芯片能够正常工作。The detection circuit of the OPA chip provided by this application transmits laser light with different optical powers to the OPA chip through the laser component, so that the laser light with different optical powers can flow through the silicon waveguide of the OPA chip, causing the change of the conductivity of the silicon waveguide of the OPA chip with The change of the optical power of the laser. The first electrode and the second electrode are respectively arranged on the upper cladding layer of the OPA chip, and after the first electrode is loaded with an AC voltage signal, the AC voltage signal can form an equivalent capacitance between the first electrode and the silicon waveguide of the OPA chip And coupled to the silicon waveguide of the OPA chip, another equivalent capacitance is formed between the second electrode and the silicon waveguide of the OPA chip, and an equivalent resistance is formed in the silicon waveguide of the OPA chip. The AC voltage signal can then flow through the silicon waveguide of the OPA chip and then output the AC current signal through the second electrode. Wherein, the alternating current signal may represent the variation relationship between the conductivity of the silicon waveguide of the OPA chip and the optical power of the laser. Based on the electrical connection relationship between the second electrode and the signal processing unit, the signal processing unit can process the AC current signal into a processing result that is easier to detect, and output the processing result, so that the processing result can represent the AC current signal and represent the silicon waveguide of the OPA chip. The relationship between the conductivity and the optical power of the laser. Wherein, when it is detected that the processing result indicates that the conductivity of the silicon waveguide of the OPA chip changes with the optical power of the laser, it can be determined that the OPA chip can work normally.
从而，利用OPA芯片的硅波导的电导率实现激光的光功率的监测，实现了对OPA芯片的无损检测，在实际生产过程中有利于对OPA芯片质量的检测和把控，且不会破坏OPA芯片内部的布局设计，无需在OPA芯片内部中增加额外的元器件，也不会影响OPA芯片的出光功率和发光路数，也不会影响OPA芯片中的激光的传播途径，也可保证能够实现 对OPA芯片的多路同时检测(如固定间隔测试或者连续测试几路)，使得检测后的OPA芯片仍可正常使用，节省了检测的成本，保证了包含有OPA芯片的激光雷达***的可靠性和安全性。Therefore, the optical power of the laser is monitored by using the conductivity of the silicon waveguide of the OPA chip, and the non-destructive testing of the OPA chip is realized, which is beneficial to the detection and control of the quality of the OPA chip in the actual production process, and will not damage the OPA chip. The internal layout design of the chip does not need to add additional components inside the OPA chip, nor will it affect the output power and number of light emitting channels of the OPA chip, nor will it affect the propagation path of the laser in the OPA chip, and it can also ensure that it can be realized Multi-channel simultaneous detection of OPA chips (such as fixed interval testing or continuous testing of several channels), so that the tested OPA chips can still be used normally, saving the cost of testing, and ensuring the reliability of the lidar system containing OPA chips and security.
本申请中，信号处理单元14可包括多种实现方式，使得信号处理单元14能够将交流电流信号I处理为处理结果，也使得处理结果能够代表交流电流信号I表示OPA芯片2的硅波导22的电导率与激光的光功率之间的变化关系，还使得用户能够更加便于检测处理结果。In the present application, the signal processing unit 14 may include multiple implementations, so that the signal processing unit 14 can process the AC current signal I as a processing result, and also make the processing result represent the AC current signal I to represent the silicon waveguide 22 of the OPA chip 2. The changing relationship between the conductivity and the optical power of the laser also makes it easier for the user to detect the processing results.
下面，结合图3，详细介绍本申请的信号处理单元14的具体实现方式。Next, with reference to FIG. 3 , a specific implementation manner of the signal processing unit 14 of the present application will be introduced in detail.
请参阅图3，图3为本申请一实施例提供的一种信号处理单元的结构示意图。Please refer to FIG. 3 . FIG. 3 is a schematic structural diagram of a signal processing unit provided by an embodiment of the present application.
为了便于说明，图3中，OPA芯片2采用包括依次叠放的上包层21、硅波导22、下包层23和衬底24的结构进行举例示意。For the sake of illustration, in FIG. 3 , the OPA chip 2 adopts a structure including an upper cladding layer 21 , a silicon waveguide 22 , a lower cladding layer 23 and a substrate 24 stacked in sequence for illustration.
如图3所示，本申请的信号处理单元14可以包括：跨阻放大器(TIA)141和锁相放大器142。As shown in FIG. 3 , the signal processing unit 14 of the present application may include: a transimpedance amplifier (TIA) 141 and a lock-in amplifier 142 .
跨阻放大器141的第一端与第二电极13电连接，跨阻放大器141的第二端与锁相放大器142的第一端电连接，锁相放大器142的第二端用于输入交流电压信号Ve，锁相放大器142的第三端和第四端用于输出处理结果。The first end of the transimpedance amplifier 141 is electrically connected to the second electrode 13, the second end of the transimpedance amplifier 141 is electrically connected to the first end of the lock-in amplifier 142, and the second end of the lock-in amplifier 142 is used to input the AC voltage signal Ve, the third terminal and the fourth terminal of the lock-in amplifier 142 are used to output the processing result.
跨阻放大器141，用于电流转换为电压。其中，本申请对跨阻放大器141的具体实现方式不做限定。例如，跨阻放大器141中可以包括：反馈电阻R2和运算放大器(opamp)A。其中，反馈电阻R2电连接在运算放大器A的输入端和输出端之间。另外，运算放大器A还包括接地端和电源端，用于维持运算放大器A的正常工作。The transimpedance amplifier 141 is used for converting current into voltage. Wherein, the present application does not limit the specific implementation manner of the transimpedance amplifier 141 . For example, the transimpedance amplifier 141 may include: a feedback resistor R2 and an operational amplifier (opamp) A. Wherein, the feedback resistor R2 is electrically connected between the input terminal and the output terminal of the operational amplifier A. In addition, the operational amplifier A also includes a ground terminal and a power supply terminal, which are used to maintain the normal operation of the operational amplifier A.
锁相放大器142，用于实现信号的频谱迁移。其中，本申请对锁相放大器142的具体实现方式不做限定。例如，锁相放大器142中可采用混频器或多个乘法器等方式进行信号的频谱迁移。The lock-in amplifier 142 is used to realize signal spectrum shift. Wherein, the present application does not limit the specific implementation manner of the lock-in amplifier 142 . For example, in the lock-in amplifier 142, a mixer or a plurality of multipliers may be used to migrate the frequency spectrum of the signal.
锁相放大器142，还用于滤除信号中的噪声。其中，本申请对锁相放大器142的具体实现方式不做限定。例如，锁相放大器142中可采用低通滤波器L的方式对信号中的噪声进行滤除。The lock-in amplifier 142 is also used to filter out noise in the signal. Wherein, the present application does not limit the specific implementation manner of the lock-in amplifier 142 . For example, the lock-in amplifier 142 may use a low-pass filter L to filter out noise in the signal.
基于上述描述，结合图4，详细介绍本申请的OPA芯片的检测方法的具体实现方式。Based on the above description and in conjunction with FIG. 4 , a specific implementation of the OPA chip detection method of the present application will be introduced in detail.
请参阅图4，图4为本申请一实施例提供的一种OPA芯片的检测方法的流程示意图。Please refer to FIG. 4 . FIG. 4 is a schematic flowchart of an OPA chip detection method provided by an embodiment of the present application.
如图4所示，本申请的OPA芯片的检测方法可以包括：As shown in Figure 4, the detection method of the OPA chip of the present application can comprise:
S201、跨阻放大器将交流电流信号转换为第一电压信号，并向锁相放大器传输第一电压信号。S201. The transimpedance amplifier converts the AC current signal into a first voltage signal, and transmits the first voltage signal to a lock-in amplifier.
在交流电流信号I输出到跨阻放大器141后，跨阻放大器141可将交流电流信号I转换为第一电压信号V1。其中，第一电压信号V1可代表交流电流信号I表示OPA芯片2的硅波导22的电导率与激光的光功率之间的变化关系。从而，实现了交流电流信号I的信号转换。After the AC current signal I is output to the transimpedance amplifier 141, the transimpedance amplifier 141 can convert the AC current signal I into a first voltage signal V1. Wherein, the first voltage signal V1 may represent the AC current signal I and represent the relationship between the conductivity of the silicon waveguide 22 of the OPA chip 2 and the optical power of the laser. Thus, the signal conversion of the AC current signal I is realized.
基于跨阻放大器141与锁相放大器142的电连接关系，跨阻放大器141可将第一电压信号V1传输给锁相放大器142。Based on the electrical connection relationship between the transimpedance amplifier 141 and the lock-in amplifier 142 , the transimpedance amplifier 141 can transmit the first voltage signal V1 to the lock-in amplifier 142 .
S202、锁相放大器对第一电压信号和交流电压信号进行频率迁移，得到第二电压信号和第三电压信号。S202. The lock-in amplifier performs frequency shift on the first voltage signal and the AC voltage signal to obtain a second voltage signal and a third voltage signal.
在接收到第一电压信号V1后，锁相放大器142可将第一电压信号V1分为两路，且将交流电压信号Ve作为调制信号。锁相放大器142可将两路中的第一电压信号V1分别与交流电压信号Ve进行频率迁移，分别得到第二电压信号V2和第三电压信号V3。从而，完成了信号的频率迁移。After receiving the first voltage signal V1, the lock-in amplifier 142 can divide the first voltage signal V1 into two paths, and use the AC voltage signal Ve as a modulation signal. The lock-in amplifier 142 can frequency-shift the first voltage signal V1 and the AC voltage signal Ve in the two channels to obtain the second voltage signal V2 and the third voltage signal V3 respectively. Thus, the frequency migration of the signal is completed.
在一些实施例中，锁相放大器142可将其中一路中的第一电压信号V1与交流电压信号Ve相乘，得到第二电压信号V2。锁相放大器142可将其中另一路中的第一电压信号V1与相位翻转90度的交流电压信号Ve相乘，得到第三电压信号V3。In some embodiments, the lock-in amplifier 142 can multiply the first voltage signal V1 in one of the channels by the AC voltage signal Ve to obtain the second voltage signal V2. The lock-in amplifier 142 can multiply the first voltage signal V1 in the other channel by the AC voltage signal Ve whose phase is reversed by 90 degrees, to obtain the third voltage signal V3.
从而，有利于后续采用正交分解的方式解析滤波后的第二电压信号V4和滤波后的第三电压信号V5。Therefore, it is beneficial to subsequently analyze the filtered second voltage signal V4 and the filtered third voltage signal V5 in a manner of orthogonal decomposition.
S203、锁相放大器对第二电压信号进行滤波，并输出滤波后的第二电压信号，对第三电压信号进行滤波，并输出滤波后的第三电压信号，其中，在检测到滤波后的第二电压信号与滤波后的第三电压信号之间的幅值差值随着激光的光功率保持不变而为固定值，且随着激光的光功率发生改变而改变时，确定硅波导的电导率随着激光的光功率的变化而变化。S203. The lock-in amplifier filters the second voltage signal, and outputs the filtered second voltage signal, filters the third voltage signal, and outputs the filtered third voltage signal, wherein, after the filtered first voltage signal is detected When the amplitude difference between the second voltage signal and the filtered third voltage signal is fixed as the optical power of the laser remains constant, and changes as the optical power of the laser changes, determine the conductance of the silicon waveguide The rate varies with the optical power of the laser.
在接收到第二电压信号V2后，锁相放大器142可对第二电压信号V2进行滤波，并输出滤波后的第二电压信号V4。在接收到第三电压信号V3后，锁相放大器142可对第三电压信号V3进行滤波，并输出滤波后的第三电压信号V5。从而，滤除了信号中的噪声，有利于后续的检测。After receiving the second voltage signal V2, the lock-in amplifier 142 can filter the second voltage signal V2 and output the filtered second voltage signal V4. After receiving the third voltage signal V3, the lock-in amplifier 142 can filter the third voltage signal V3 and output the filtered third voltage signal V5. Therefore, the noise in the signal is filtered, which is beneficial to the subsequent detection.
其中，滤波后的第二电压信号V4与滤波后的第三电压信号V5之间的幅值差值可代表交流电流信号I表示OPA芯片2的硅波导22的电导率与激光的光功率之间的变化关系。Wherein, the amplitude difference between the filtered second voltage signal V4 and the filtered third voltage signal V5 can represent the AC current signal I, which represents the difference between the conductivity of the silicon waveguide 22 of the OPA chip 2 and the optical power of the laser. change relationship.
从而，通过检测幅值差值，可检测通过OPA芯片2的硅波导22的激光的光功率的变化，实现对OPA芯片2的无损检测。Therefore, by detecting the amplitude difference, the change of the optical power of the laser light passing through the silicon waveguide 22 of the OPA chip 2 can be detected, and the non-destructive detection of the OPA chip 2 can be realized.
在检测到幅值差值随着激光的光功率保持不变而为固定值，且随着激光的光功率发生改变而改变时，便可确定硅波导22的电导率随着激光的光功率的变化而变化，还可确定OPA芯片2能够正常工作。When it is detected that the amplitude difference is a fixed value as the optical power of the laser remains constant and changes as the optical power of the laser changes, it can be determined that the electrical conductivity of the silicon waveguide 22 increases with the optical power of the laser. It can also be determined that the OPA chip 2 can work normally.
综上，信号处理单元14将交流电流信号I处理成了更容易检测的处理结果，方便OPA芯片2的无损检测，有利于提升无损检测OPA芯片2的效率和准确率。To sum up, the signal processing unit 14 processes the AC current signal I into a processing result that is easier to detect, which facilitates the non-destructive testing of the OPA chip 2 and helps to improve the efficiency and accuracy of the non-destructive testing of the OPA chip 2 .
本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，该流程可以由计算机程序来指令相关的硬件完成，该程序可存储于计算机可读取存储介质中，该程序在执行时，可包括如上述各方法实施例的流程。而前述的存储介质包括：ROM或随机存储记忆体RAM、磁碟或者光盘等各种可存储程序代码的介质。Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments are realized. The processes can be completed by computer programs to instruct related hardware. The programs can be stored in computer-readable storage media. When the programs are executed , may include the processes of the foregoing method embodiments. The aforementioned storage medium includes: ROM or random access memory RAM, magnetic disk or optical disk, and other various media that can store program codes.
最后应说明的是：以上实施例，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何在本申请揭露的技术范围内的变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以权利要求的保护范围为准。Finally, it should be noted that: the above embodiments are only the specific implementation methods of the application, but the scope of protection of the application is not limited thereto, and any changes or replacements within the technical scope disclosed in the application should be covered by this application. within the scope of the application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims (15)

  1. 一种光学相位阵列OPA芯片的检测电路，其特征在于，包括：激光器组件、第一电极、第二电极和信号处理单元；A detection circuit of an optical phase array OPA chip, characterized in that it comprises: a laser assembly, a first electrode, a second electrode and a signal processing unit;
    其中，所述第一电极和所述第二电极分别设置在所述光学相位阵列OPA芯片上，所述第一电极用于加载交流电压信号，所述第二电极与所述信号处理单元电连接；Wherein, the first electrode and the second electrode are respectively arranged on the optical phase array OPA chip, the first electrode is used to load an AC voltage signal, and the second electrode is electrically connected to the signal processing unit ;
    所述激光器组件，用于向所述光学相位阵列OPA芯片发射不同光功率的激光，以使所述激光通过所述光学相位阵列OPA芯片的硅波导；The laser component is used to emit laser light with different optical powers to the optical phase array OPA chip, so that the laser light passes through the silicon waveguide of the optical phase array OPA chip;
    所述第一电极，用于将所述交流电压信号传输到所述硅波导中；The first electrode is used to transmit the AC voltage signal into the silicon waveguide;
    所述第二电极，用于向所述信号处理单元传输交流电流信号，其中，所述交流电流信号是基于所述第一电极与所述第二电极之间的电势差产生的；The second electrode is configured to transmit an alternating current signal to the signal processing unit, wherein the alternating current signal is generated based on a potential difference between the first electrode and the second electrode;
    所述信号处理单元，用于对所述交流电流信号进行信号处理，并输出处理结果，其中，在检测到所述处理结果表示所述硅波导的电导率随着所述激光的光功率的变化而变化时，确定所述光学相位阵列OPA芯片能够正常工作。The signal processing unit is configured to perform signal processing on the AC current signal, and output a processing result, wherein, when the processing result is detected, it indicates that the electrical conductivity of the silicon waveguide changes with the optical power of the laser When it changes, it is determined that the optical phase array OPA chip can work normally.
  2. 根据权利要求1所述的电路，其特征在于，所述信号处理单元包括：跨阻放大器和锁相放大器；The circuit according to claim 1, wherein the signal processing unit comprises: a transimpedance amplifier and a lock-in amplifier;
    其中，所述跨阻放大器的第一端与所述第二电极电连接，所述跨阻放大器的第二端与所述锁相放大器的第一端电连接，所述锁相放大器的第二端用于输入所述交流电压信号，所述锁相放大器的第三端和第四端用于输出所述处理结果；Wherein, the first end of the transimpedance amplifier is electrically connected to the second electrode, the second end of the transimpedance amplifier is electrically connected to the first end of the lock-in amplifier, and the second end of the lock-in amplifier The terminal is used to input the AC voltage signal, and the third terminal and the fourth terminal of the lock-in amplifier are used to output the processing result;
    所述跨阻放大器，用于将所述交流电流信号转换为第一电压信号，并向所述锁相放大器传输所述第一电压信号；The transimpedance amplifier is used to convert the AC current signal into a first voltage signal, and transmit the first voltage signal to the lock-in amplifier;
    所述锁相放大器，用于对所述第一电压信号和所述交流电压信号进行频率迁移，得到第二电压信号和第三电压信号；The lock-in amplifier is configured to frequency shift the first voltage signal and the AC voltage signal to obtain a second voltage signal and a third voltage signal;
    所述锁相放大器，还用于对所述第二电压信号进行滤波，并输出滤波后的所述第二电压信号，对所述第三电压信号进行滤波，并输出滤波后的所述第三电压信号，其中，在检测到滤波后的所述第二电压信号与滤波后的所述第三电压信号之间的幅值差值随着所述激光的光功率保持不变而为固定值，且随着所述激光的光功率发生改变而改变时，确定所述硅波导的电导率随着所述激光的光功率的变化而变化。The lock-in amplifier is further configured to filter the second voltage signal, and output the filtered second voltage signal, filter the third voltage signal, and output the filtered third voltage signal. a voltage signal, wherein the amplitude difference between the filtered second voltage signal and the filtered third voltage signal is detected to be a fixed value as the optical power of the laser remains constant, And when it changes with the change of the optical power of the laser, it is determined that the electrical conductivity of the silicon waveguide changes with the change of the optical power of the laser.
  3. 根据权利要求2所述的电路，其特征在于，所述锁相放大器，具体用于将所述第一电压信号与所述交流电压信号相乘，得到所述第二电压信号；将所述第一电压信号与相位翻转90度的所述交流电压信号相乘，得到所述第三电压信号。The circuit according to claim 2, wherein the lock-in amplifier is specifically configured to multiply the first voltage signal by the AC voltage signal to obtain the second voltage signal; A voltage signal is multiplied by the AC voltage signal whose phase is reversed by 90 degrees to obtain the third voltage signal.
  4. 根据权利要求1-3任一项所述的电路，其特征在于，所述激光器组件，具体用于通过调整所述激光的光强、频率或相位中的至少一个参数，向所述光学相位阵列OPA芯片发射不同光功率的激光。The circuit according to any one of claims 1-3, wherein the laser component is specifically configured to provide the optical phase array The OPA chip emits laser light with different optical powers.
  5. 根据权利要求4所述的电路，其特征在于，所述激光器组件包括：激光发射器和控制器；The circuit according to claim 4, wherein the laser component comprises: a laser transmitter and a controller;
    其中，所述控制器用于调整所述激光的光强、频率或相位中的至少一个参数；所述激光发射器用于向所述光学相位阵列OPA芯片发射调整后的不同光功率的激光。Wherein, the controller is used to adjust at least one parameter of the light intensity, frequency or phase of the laser light; the laser emitter is used to emit adjusted laser light with different optical powers to the optical phase array OPA chip.
  6. 根据权利要求1-3任一项所述的电路，其特征在于，所述光学相位阵列OPA芯片包括：端面耦合器、移相器以及天线；The circuit according to any one of claims 1-3, wherein the optical phase array OPA chip comprises: an end coupler, a phase shifter and an antenna;
    其中，所述端面耦合器用于将所述激光传输给所述移相器；所述移相器用于控制所述天线的相对相位；所述天线用于将所述激光发射或耦合到自由空间。Wherein, the end face coupler is used to transmit the laser light to the phase shifter; the phase shifter is used to control the relative phase of the antenna; and the antenna is used to emit or couple the laser light to free space.
  7. 根据权利要求6所述的电路，其特征在于，所述端面耦合器、所述移相器、以及所述天线中的任意一个结构包括：依次叠放的上包层、硅波导、下包层和衬底。The circuit according to claim 6, wherein any one structure of the end coupler, the phase shifter, and the antenna comprises: an upper cladding layer, a silicon waveguide, and a lower cladding layer stacked in sequence and substrate.
  8. 根据权利要求6所述的电路，其特征在于，所述端面耦合器、所述移相器、以及所述天线中的任意一个结构包括：依次叠放的上包层、硅波导和衬底。The circuit according to claim 6, wherein any one of the structure of the end coupler, the phase shifter, and the antenna comprises: an upper cladding layer, a silicon waveguide, and a substrate stacked in sequence.
  9. 根据权利要求7或8所述的电路，其特征在于，所述第一电极和所述第二电极分别位于所述光学相位阵列OPA芯片的上包层上。The circuit according to claim 7 or 8, wherein the first electrode and the second electrode are respectively located on the upper cladding layer of the optical phase array OPA chip.
  10. 根据权利要求9所述的电路，其特征在于，所述第一电极和所述第二电极分别位于所述光学相位阵列OPA芯片的上包层上的方式包括：The circuit according to claim 9, wherein the manner in which the first electrode and the second electrode are respectively located on the upper cladding layer of the optical phase array OPA chip comprises:
    所述端面耦合器的输出侧、所述移相器中的每一级多模干涉MMI的上臂和下臂、所述移相器中的末级多模干涉MMI的上臂和下臂、或者所述天线的输入侧中的至少一种。The output side of the end coupler, the upper arm and the lower arm of each stage of multimode interference MMI in the phase shifter, the upper arm and lower arm of the final stage of multimode interference MMI in the phase shifter, or the at least one of the input sides of the above-mentioned antennas.
  11. 一种光学相位阵列OPA芯片的检测方法，其特征在于，应用于光学相位阵列OPA芯片的检测方装置，所述装置包括：激光器组件、第一电极、第二电极和信号处理单元；其中，所述第一电极和所述第二电极分别设置在所述光学相位阵列OPA芯片上，所述第一电极用于加载交流电压信号，所述第二电极与所述信号处理单元电连接；A detection method of an optical phase array OPA chip is characterized in that it is applied to a detection device of an optical phase array OPA chip, and the device includes: a laser assembly, a first electrode, a second electrode and a signal processing unit; wherein, the The first electrode and the second electrode are respectively arranged on the optical phase array OPA chip, the first electrode is used to load an AC voltage signal, and the second electrode is electrically connected to the signal processing unit;
    所述方法包括：The methods include:
    所述激光器组件向所述光学相位阵列OPA芯片发射不同光功率的激光，以使所述激光通过所述光学相位阵列OPA芯片的硅波导；The laser component emits laser light of different optical powers to the optical phase array OPA chip, so that the laser light passes through the silicon waveguide of the optical phase array OPA chip;
    所述第一电极将所述交流电压信号传输到所述硅波导中；the first electrode transmits the AC voltage signal into the silicon waveguide;
    所述第二电极向所述信号处理单元传输交流电流信号，其中，所述交流电流信号是基于所述第一电极与所述第二电极之间的电势差产生的；The second electrode transmits an alternating current signal to the signal processing unit, wherein the alternating current signal is generated based on a potential difference between the first electrode and the second electrode;
    所述信号处理单元对所述交流电流信号进行信号处理，并输出处理结果，其中，在检测到所述处理结果表示所述硅波导的电导率随着所述激光的光功率的变化而变化时，确定所述光学相位阵列OPA芯片能够正常工作。The signal processing unit performs signal processing on the AC current signal, and outputs a processing result, wherein, when it is detected that the processing result indicates that the electrical conductivity of the silicon waveguide changes as the optical power of the laser changes , confirm that the optical phase array OPA chip can work normally.
  12. 根据权利要求11所述的方法，其特征在于，所述信号处理单元包括：跨阻放大器和锁相放大器；其中，所述跨阻放大器的第一端与所述第二电极电连接，所述跨阻放大器的第二端与所述锁相放大器的第一端电连接，所述锁相放大器的第二端用于输入所述交流电压信号，所述锁相放大器的第三端和第四端用于输出所述处理结果；The method according to claim 11, wherein the signal processing unit comprises: a transimpedance amplifier and a lock-in amplifier; wherein, the first end of the transimpedance amplifier is electrically connected to the second electrode, and the The second end of the transimpedance amplifier is electrically connected to the first end of the lock-in amplifier, the second end of the lock-in amplifier is used to input the AC voltage signal, the third end of the lock-in amplifier and the fourth end of the lock-in amplifier The terminal is used to output the processing result;
    所述信号处理单元对所述交流电流信号进行信号处理，并输出处理结果，包括：The signal processing unit performs signal processing on the AC current signal, and outputs a processing result, including:
    所述跨阻放大器将所述交流电流信号转换为第一电压信号，并向所述锁相放大器传输所述第一电压信号；The transimpedance amplifier converts the AC current signal into a first voltage signal, and transmits the first voltage signal to the lock-in amplifier;
    所述锁相放大器对所述第一电压信号和所述交流电压信号进行频率迁移，得到第二电压信号和第三电压信号；The lock-in amplifier performs frequency shift on the first voltage signal and the AC voltage signal to obtain a second voltage signal and a third voltage signal;
    所述锁相放大器对所述第二电压信号进行滤波，并输出滤波后的所述第二电压信号，对所述第三电压信号进行滤波，并输出滤波后的所述第三电压信号，其中，在检测到滤波后的所述第二电压信号与滤波后的所述第三电压信号之间的幅值差值随着所述激光的光功率保持不变而为固定值，且随着所述激光的光功率发生改变而改变时，确定所述硅波导的电导率随着所述激光的光功率的变化而变化。The lock-in amplifier filters the second voltage signal, and outputs the filtered second voltage signal, filters the third voltage signal, and outputs the filtered third voltage signal, wherein , after detecting that the amplitude difference between the filtered second voltage signal and the filtered third voltage signal is a fixed value as the optical power of the laser remains constant, and as the When the optical power of the laser is changed, it is determined that the electrical conductivity of the silicon waveguide changes with the optical power of the laser.
  13. 根据权利要求12所述的方法，其特征在于，所述锁相放大器对所述第一电压信号和所述交流电压信号进行频率迁移，得到第二电压信号和第三电压信号，包括：The method according to claim 12, wherein the lock-in amplifier performs frequency shift on the first voltage signal and the AC voltage signal to obtain a second voltage signal and a third voltage signal, comprising:
    所述锁相放大器将所述第一电压信号与所述交流电压信号相乘，得到所述第二电压信号；The lock-in amplifier multiplies the first voltage signal by the AC voltage signal to obtain the second voltage signal;
    所述锁相放大器将所述第一电压信号与相位翻转90度的所述交流电压信号相乘，得到所述第三电压信号。The lock-in amplifier multiplies the first voltage signal by the AC voltage signal whose phase is reversed by 90 degrees to obtain the third voltage signal.
  14. 根据权利要求11-13任一项所述的方法，其特征在于，所述激光器组件向所述光学相位阵列OPA芯片发射不同光功率的激光，包括：The method according to any one of claims 11-13, wherein the laser assembly emits lasers of different optical powers to the optical phase array OPA chip, comprising:
    所述激光器组件通过调整所述激光的光强、频率或相位中的至少一个参数，向所述光学相位阵列OPA芯片发射不同光功率的激光。The laser component emits laser light with different optical powers to the optical phase array OPA chip by adjusting at least one parameter of light intensity, frequency or phase of the laser light.
  15. 根据权利要求11-13任一项所述的方法，其特征在于，所述第一电极和所述第二电极分别设置在所述光学相位阵列OPA芯片上的方式包括：The method according to any one of claims 11-13, wherein the manner in which the first electrode and the second electrode are respectively arranged on the optical phase array OPA chip comprises:
    所述光学相位阵列OPA芯片中的端面耦合器的输出侧、每一级多模干涉MMI的上臂和下臂、末级多模干涉MMI的上臂和下臂、或者天线的输入侧中的至少一种。At least one of the output side of the end face coupler in the optical phase array OPA chip, the upper arm and the lower arm of each stage of multimode interference MMI, the upper arm and lower arm of the final stage of multimode interference MMI, or the input side of the antenna kind.
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CN109901263A (en) * 2019-01-29 2019-06-18 浙江大学 A kind of silicon substrate integrated optics phased array chip based on common electrode
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US20210302577A1 (en) * 2020-03-30 2021-09-30 Korea Advanced Institute Of Science And Technology Silicon-opa-based lidar for measuring distance using quasi-frequency modulation
CN111487602A (en) * 2020-05-26 2020-08-04 中国电子科技集团公司电子科学研究院 Optical phased array, laser radar and optical power distribution method
CN112000044A (en) * 2020-09-01 2020-11-27 吉林大学 High-speed Optical Phased Array (OPA) optical phase control circuit and control method thereof

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