WO2023083016A1 - 发热组件、发热组件的制备方法及电子雾化装置 - Google Patents
发热组件、发热组件的制备方法及电子雾化装置 Download PDFInfo
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- WO2023083016A1 WO2023083016A1 PCT/CN2022/128056 CN2022128056W WO2023083016A1 WO 2023083016 A1 WO2023083016 A1 WO 2023083016A1 CN 2022128056 W CN2022128056 W CN 2022128056W WO 2023083016 A1 WO2023083016 A1 WO 2023083016A1
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- heating
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- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
- A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
- A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
- A24F40/46—Shape or structure of electric heating means
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- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
- A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
- A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
Definitions
- the present application relates to the technical field of electronic atomizers, in particular to a heating component, a method for preparing the heating component, and an electronic atomizing device.
- Tube-type peripheral heating means that the heating tube surrounds the aerosol-forming substrate to heat the aerosol-forming substrate; central embedded heating refers to inserting the heating element into the aerosol-forming substrate to heat the aerosol-forming substrate.
- the heating element mainly adopts ceramics or metal with insulation treatment as the substrate, and then prints or coats the resistance heating circuit on the substrate, and fixes the resistance heating circuit on the substrate after high temperature treatment.
- Current heating components mainly include alloy resistors and thermistors.
- the resistivity of the alloy resistor is generally less than 10 -7 ⁇ m, and the thermistor is generally greater than 10 -2 ⁇ m.
- the resistivity of alloy resistors and thermistors cannot meet the requirements of use due to limitations in power and other factors.
- the present application provides a heating component, a method for preparing the heating component, and an electronic atomization device, so as to solve the technical problem in the prior art that the resistivity of alloy resistors and thermistors cannot meet the requirements for use.
- the first technical solution provided by this application is to provide a heating component, including a heating element, the material of the heating element is composed of metal and ceramics, wherein, in the heating element, the metal The mass proportion of the ceramic is 40%-75%, and the mass proportion of the ceramic is 25%-60%.
- the metal includes at least one of nickel, iron, cobalt, copper, titanium, aluminum and stainless steel.
- the ceramic includes at least one of alumina, zirconia, silicon oxide, yttrium oxide, lanthanum oxide, cerium oxide and magnesium oxide.
- the ceramic is a doped ceramic, and the elements doped in the ceramic are used to improve the stability and toughness of the ceramic phase.
- the resistivity of the heating element is 4 ⁇ 10 -6 ⁇ m to 8 ⁇ 10 -4 ⁇ m.
- the temperature coefficient of resistance of the heating element is greater than 600ppm/°C.
- the heating element has an open groove, the opening groove is opened on the heating element along the length direction of the heating element, and the length of the opening groove along the length direction of the heating element is 50% of the length of the heating element -95%.
- the heating element is in the shape of a flat plate, and the heating element includes a sheet-shaped pointed head whose two opposite surfaces are isosceles tri-shaped and a pointed head whose two opposite surfaces are rectangular and connected at the bottom of the pointed head. The main part of the edge.
- the heating element is columnar, and the heating element includes a conical tip and a cylindrical main body connected to the bottom surface of the tip.
- a filling body is also included, the filling body is filled in the opening groove, and the resistivity of the filling body is greater than 8 ⁇ 10 -3 ⁇ .
- the fixed base is arranged at one end of the heating body; the wire is connected to the end of the heating body provided with the fixed base, and is used for electrical connection with the power supply assembly , to supply power to the heating element.
- the fixing base is arranged at the opening end of the opening slot.
- the second technical solution provided by this application is: provide an electronic atomization device, including a casing, a power supply assembly, and a heating assembly; the power supply assembly is arranged in the casing; the heating assembly It is arranged in the casing and connected to the power supply component, and the power supply component supplies power to the heating component; wherein, the heating component is the above-mentioned heating component.
- the heating component in the present application includes a heating element, and the heating element includes metal and ceramics, wherein the mass proportion of metal is 40% to 75%, and the mass proportion of ceramics is 25%. % ⁇ 60%.
- the heating element made of this ratio has a resistivity greater than that of the alloy resistance and is smaller than that of the thermistor.
- FIG. 1 is a schematic structural diagram of a heating component provided in an embodiment of the present application
- Fig. 2 is the first top view of the heating component provided by the embodiment of the present application.
- Fig. 3 is a second top view of the heating component provided by the embodiment of the present application.
- Fig. 4 is a third top view of the heating component provided by the embodiment of the present application.
- Fig. 5 is another structural schematic diagram of the heating component provided by the embodiment of the present application.
- Fig. 6 is a schematic structural diagram of a heating component provided by another embodiment of the present application.
- Fig. 7 is a schematic structural diagram of an electronic atomization device provided in an embodiment of the present application.
- FIG. 8 is a flow chart of a method for preparing a heating component provided in an embodiment of the present application.
- Fig. 9 is a flowchart of a method for preparing a heating component provided by another embodiment.
- first”, “second”, and “third” in this application are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, features defined as “first”, “second”, and “third” may explicitly or implicitly include at least one of these features.
- “plurality” means at least two, such as two, three, etc., unless otherwise specifically defined. All directional indications (such as up, down, left, right, front, back%) in the embodiments of the present application are only used to explain the relative positional relationship between the various components in a certain posture (as shown in the drawings) , sports conditions, etc., if the specific posture changes, the directional indication also changes accordingly.
- FIG. 1 is a schematic structural diagram of a heating component provided in an embodiment of the present application.
- the heating component 10 includes a heating body 11 , a fixing base 13 and a wire 14 .
- the heating element 11 is used for non-combustion heating of the aerosol-forming substrate after the aerosol-forming substrate is inserted, so as to facilitate inhalation by the user.
- the fixing base 13 is disposed at one end of the heating element 11 for fixing and installing the heating element 11 in the electronic atomization device.
- the wire 14 is connected to one end of the heating element 11 provided with the fixed base 13 for electrical connection with the power supply assembly 30 (as shown in FIG. 7 ) to supply power to the heating element 11 .
- the fixing base 13 and the wire 14 are optional structures.
- the heating element 11 is formed by mixing metal materials and ceramic materials and then sintering them. During the sintering process, there is no chemical reaction and high-temperature chemical diffusion between the metal phase and the ceramic phase, so the resistivity stability of the heating element 11 is high. Its resistivity is greater than 10 -7 ⁇ m of alloy resistance, 10 -2 ⁇ m less than the resistivity of thermistor, between the resistivity of alloy resistance and thermistor, filling the gap
- the current application range of conventional heating resistors can meet the resistivity requirements of some specific heat-not-burn aerosol forming devices for the heating component 10 .
- the material of the heating element 11 includes metal and ceramics, the mass proportion of metal in the heating element 11 is 40%-75%, and the mass proportion of ceramics is 25%-60%. That is to say, in the heating element 11 , the metal material accounts for 40%-75% of the total mass of the heating element 11 , and the ceramic material accounts for 25%-60% of the total mass of the heating element 11 .
- the metal includes at least one of nickel, iron, cobalt, copper, titanium, aluminum and stainless steel. It can be understood that at least one of nickel, iron, cobalt, copper, titanium, aluminum and stainless steel is added to the heating element 11 as a conductive material, and the aerosol-forming substrate is heated without combustion after the heating element 11 is powered.
- the stainless steel includes one or more of 316L stainless steel, 304 stainless steel and 430 stainless steel, and may also be other types of stainless steel.
- the ceramics include at least one of alumina, zirconia, silicon oxide, yttrium oxide, lanthanum oxide, cerium oxide and magnesium oxide. It can be understood that since metals have low resistivity and high temperature coefficient of resistance (TCR), in order to make the heating element 11 with a resistivity between 10 -7 ⁇ m and 10 -2 ⁇ m, It is necessary to add metal oxides, inorganic non-metals or non-stainless steel metals to adjust the resistivity of the metal. In this implementation, at least one of alumina, zirconia, silicon oxide, yttrium oxide, lanthanum oxide, cerium oxide and magnesium oxide is selected as the ceramic for adjusting the resistivity of the heating element 11 . In addition, ceramics can also enhance the strength of the heating element 11 , facilitating the insertion of the aerosol-forming matrix into the heating element 11 .
- the mass proportion of metal in the heating element 11 is greater than 70%, and the mass proportion of ceramics is less than 30%. Due to the higher mass ratio of metal, the heating element 11 has a lower resistivity. In another embodiment, the mass proportion of metal in the heating element 11 is less than 50%, and the mass proportion of ceramics is greater than 50%. Due to the low mass ratio of metal, the heating element 11 has a high resistivity.
- the ceramic is a doped ceramic.
- zirconia can be doped with yttrium to improve the phase structure stability of zirconia.
- alumina can be doped with zirconium to increase the toughness of alumina.
- the resistivity of the heating element 11 is 4 ⁇ 10 -6 ⁇ m to 8 ⁇ 10 -4 ⁇ m, and the temperature coefficient of resistance of the heating element 11 is greater than 600 ppm/°C, preferably greater than 700 ppm/°C.
- the resistivity of the heating element 11 is related to the mass ratio of the metal and ceramics, the material composition of the metal and ceramics, the particle size of the metal and ceramic materials, and the sintering process.
- the mass proportion of metal can be 40%-75%
- the mass proportion of ceramics is 25%-60%
- the metal is at least one of nickel, iron, cobalt, copper, titanium, aluminum and stainless steel.
- the ceramic is at least one of alumina, zirconia, silicon oxide, yttrium oxide, lanthanum oxide, cerium oxide and magnesium oxide, the sintering vacuum degree is 10 -3 Pa ⁇ 10 -1 Pa, and the sintering temperature is 1200°C
- the heating element 11 is prepared at ⁇ 1500° C. to meet the requirements of the resistivity and temperature coefficient of resistance of the heating element 11 .
- the heating element 11 also has an opening groove 12, the opening groove 12 is opened on the heating element 11 along the length direction of the heating element 11, and the length of the opening groove 12 along the length direction of the heating element 11 is 50% of the length of the main body of the heating element 11. %-95%.
- the shape of the heating element 11 includes one or more combinations thereof such as cylinder, cone, cuboid, and sheet.
- the heating element 11 includes a sheet-shaped point whose two opposite surfaces are isosceles tri-shaped and a cylindrical point connected to the bottom surface of the point of the main body.
- the heating element 11 is in the shape of a plate, and the heating element 11 includes a sheet-shaped two opposite surfaces with isosceles triangular pointed parts and two opposite surfaces. The surface is a rectangular main body connected to the bottom edge of the pointed head.
- FIG. 1 and Fig. 2 for example, the heating element 11 includes a sheet-shaped point whose two opposite surfaces are isosceles tri-shaped and a cylindrical point connected to the bottom surface of the point of the main body.
- the heating element 11 is in the shape of a plate, and the heating element 11 includes a sheet-shaped two opposite surfaces with isosceles triangular pointed parts and two opposite surfaces. The surface is a rectangular main body connected to the bottom edge of the pointed
- the heating element 11 is columnar, and the heating element 11 includes a conical tip and a cylindrical main body connected to the bottom surface of the tip.
- the pointed part in the above embodiment is to reduce the friction between the aerosol-forming substrate and the heating element 11 when the aerosol-forming substrate is inserted into the heating element 11, so as to facilitate the insertion of the aerosol-forming substrate.
- the main body has an opening groove 12, and the length of the opening groove 12 along the length direction of the heating element 11 is 50%-95% of the total length of the pointed portion and the main body.
- the open groove 12 is a blind groove.
- the opening groove 12 may be hollowed out.
- the groove width of the opening groove 12 can be changed from the end away from the fixed base 13 to the end close to the fixed base.
- One end of the seat 13 is equal, as shown in FIG. 1 .
- the slot width of the opening slot 12 can be a central axis symmetrical structure that gradually increases or decreases from the end away from the fixed base 13 to the end close to the fixed base 13 .
- the slot width of the opening slot 12 gradually increases from an end away from the fixed base 13 to an end close to the fixed base 13 .
- the length of the opening groove 12 along the length direction of the heating element 11 is 50%-95% of the length of the heating element 11, which is designed in this way so that the temperature field at the end of the heating element 11 away from the fixed base 13 is relatively concentrated.
- the aerosol-forming substrate inserted into the heating element 11 is heated without combustion, so that the temperature of the end of the heating element 11 close to the fixed base 13 is lower, reducing heat loss.
- the main body of the heating element 11 is the part of the heating element 11 except the tip.
- the heating element 11 further includes a filling body 15, which is filled in the opening groove 12, and the material of the filling body 15 is a material with a resistivity greater than 8 ⁇ 10 ⁇ 3 ⁇ .
- the filling body 15 includes at least one of ceramic and glass, and the ceramic is at least one of alumina, zirconia, silicon oxide, yttrium oxide, lanthanum oxide, cerium oxide and magnesium oxide.
- electrodes may also be provided on the surface of the heating element 11 to facilitate the connection of the wires 14 .
- conductive metal pastes are respectively provided as electrodes on the outer surfaces of the two free ends of the heating element 11 near the fixed base 13 .
- the shape and structure of the fixing base 13 are not limited, as long as the heating element 11 can be fixed.
- the fixing base 13 is a circular resin plate.
- the wire 14 may be a metal wire, for example, an enamelled copper wire.
- FIG. 7 is a schematic structural diagram of the electronic atomization device provided in this application.
- the electronic atomization device includes a casing 20 , a power supply component 30 and a heating component 10 . Both the power supply assembly 30 and the heating assembly 10 are installed in the housing 20 , the power supply assembly 30 is electrically connected to the heating assembly 10 , and the power supply assembly 30 is used to supply power to the heating assembly 10 .
- the shape and material of the housing 20 are not limited.
- the housing 20 is an insulating hollow cylinder.
- the power supply assembly 30 may specifically include a rechargeable lithium-ion battery and a PCB circuit board.
- the power supply assembly 30 also includes necessary components such as a bracket and a microphone.
- the heating component 10 may be the heating component 10 of any of the above-mentioned embodiments, which will not be repeated here.
- the heat-generating component 10 is provided to perform non-combustion heating after inserting the aerosol-forming substrate, so as to facilitate the user to inhale.
- the resistivity of the heating element 11 of the heating element 10 is 4 ⁇ 10 -6 ⁇ m ⁇ 8 ⁇ 10 -4 ⁇ m
- the temperature coefficient of resistance of the heating element 11 is greater than 600ppm/°C, which fills the application range of conventional heating resistors , which can meet the electronic atomization device’s requirements on the resistivity of the heating component 10, and can realize the functions of heating and self-temperature control.
- FIG. 8 is a flow chart of the preparation method of the heating component provided in this application.
- the preparation method of the heating component 10 specifically includes:
- Step S1 Mix metal powder, ceramic powder and a mixing agent to obtain a mixture, and the mass proportion of metal is 40%-75%, and the mass proportion of ceramic is 25%-60%.
- the metal powder, the ceramic powder and the mixing agent are mixed by means of ball milling.
- Step S2 Press the mixture to form a biscuit.
- the biscuit can be prepared by injection molding, extrusion or dry pressing.
- the injection molding method is taken as an example to illustrate, that is, the mixed mixture is placed in an injection machine, heated to make it into a fluid, pressed into a mold with a live cylinder, cooled and demoulded to obtain a green body.
- Step S3 Debinding and sintering the green body.
- the formed biscuit is placed in an atmosphere furnace or a vacuum furnace for debinding and sintering.
- Sintering is carried out in a vacuum furnace with a vacuum degree of 10 -3 Pa to 10 -1 Pa and a sintering temperature of 1200°C to 1500°C.
- the mixture in the green body is consumed, so that the sintered heating element 11 only contains metal and ceramics.
- step S3 After step S3 is completed, the following steps can also be performed:
- Step S4 Machining and finishing the sintered heating element 11 according to the actual size, so that the heating element 11 conforms to the actual size and is convenient for installation in the electronic atomization device.
- Step S5 Brazing the wire 14 and the fixing base 13 on the heating element 11 in an atmosphere furnace or a vacuum furnace.
- the fixed base 13 is soldered to one end of the heating element 11
- the wire 14 is soldered to the end of the heating element 11 close to the fixed base 13 .
- Step S6 Prepare a glaze layer on the surface of the heating element 11 .
- the heating element 11 is placed in an atmosphere furnace or a vacuum furnace for sintering to prepare a glaze layer on the heating element 11, wherein the glaze layer is used to protect the heating element 11 and prolong the service life of the heating element 11 to a certain extent.
- step S5 and step S6 when preparing the heating component 10 , the order of step S5 and step S6 can be reversed. That is, after the base is fixed and the wire 14 is brazed on the heating element 11, the glaze layer can be prepared; after the glaze layer is prepared on the surface of the heating element 11, the fixed base 13 and the wire 14 are brazed on the heating element 11. Wherein, when preparing the glaze layer, the electrodes on the surface of the heating element 11 need to be exposed.
- the resistivity of the heating element 11 is 4 ⁇ 10 -6 ⁇ m ⁇ 8 ⁇ 10 -4 ⁇ m, and the temperature coefficient of resistance is greater than 600ppm/ °C.
- the nickel powder with a particle size of 1 ⁇ m is 40% by mass, and the alumina powder with a particle size of 10 ⁇ m is proportioned by 60% by mass, and then an appropriate amount of dispersant triethanolamine (TEA) is added to the ball mill. Wet grinding for 30h to get mixed powder.
- TSA dispersant triethanolamine
- the vacuum degree is 10 ⁇ 2 Pa
- the sintering temperature is 1400° C.
- the sintering time is 120 minutes.
- the physical performance parameters of the cermet heating element prepared according to the above process are as follows:
- the nickel powder with a particle size of 10 ⁇ m is 75% by mass, and the aluminum oxide powder with a particle size of 1 ⁇ m is proportioned at 25% by mass, and then an appropriate amount of dispersant triethanolamine (TEA) is added to the ball mill. Wet grinding for 30h to get mixed powder.
- TSA dispersant triethanolamine
- the vacuum degree is 10 ⁇ 2 Pa
- the sintering temperature is 1400° C.
- the sintering time is 120 minutes.
- the physical performance parameters of the cermet heating element prepared according to the above process are as follows:
- the nickel powder with a particle size of 1 ⁇ m is 40% by mass, and the zirconia powder with a particle size of 5 ⁇ m is proportioned by 60% by mass, and then an appropriate amount of dispersant triethanolamine (TEA) is added to the ball mill. Wet grinding for 30h to get mixed powder.
- TSA dispersant triethanolamine
- the vacuum degree is 10 ⁇ 2 Pa
- the sintering temperature is 1420° C.
- the sintering time is 120 minutes.
- the physical performance parameters of the cermet heating element prepared according to the above process are as follows:
- the 316L stainless steel powder with a particle size of 10 ⁇ m is 40% by mass, and the zirconia powder with a particle size of 1 ⁇ m is proportioned by 60% by mass, and then an appropriate amount of dispersant triethanolamine (TEA) is added to the ball mill. Wet milling for 40 hours to obtain mixed powder.
- TSA dispersant triethanolamine
- the degree of vacuum is 10 ⁇ 2 Pa
- the sintering temperature is 1350° C.
- the sintering time is 120 minutes.
- the physical performance parameters of the cermet heating element prepared according to the above process are as follows:
- the cermet prepared by the above process meets the requirements of resistivity and TCR, and can realize the functions of heating and self-temperature control.
- the 430L stainless steel powder with a particle size of 10 ⁇ m is 40% by mass, and the zirconia powder with a particle size of 1 ⁇ m is proportioned by 60% by mass, and then an appropriate amount of dispersant triethanolamine (TEA) is added. Wet milling for 40 hours to obtain mixed powder.
- TSA dispersant triethanolamine
- the vacuum degree is 10- 2 Pa
- the sintering temperature is 1400°C
- the sintering time is 120min.
- the physical performance parameters of the cermet heating element prepared according to the above process are as follows:
- Densification and sintering of the heating element 11 can be realized at a relatively low degree of vacuum and sintering temperature. Moreover, during the whole sintering process, the metal phase and the ceramic phase do not undergo chemical reaction and high-temperature chemical diffusion, so that the metal phase and ceramic phase materials have the characteristics of good high-temperature chemical compatibility and high sintering activity.
- the raw materials of the heating component 10 come from a wide range of sources and are cheap, so the material cost of the heating component 10 is low. And because the metal phase and the ceramic phase have high sintering activity and good processability, the process for preparing the heating element 10 is simple and the manufacturing cost is low.
- the obtained heating element 10 can meet the requirement that the resistivity of the heating element 11 is 4 ⁇ 10 -6 ⁇ m ⁇ 8 ⁇ 10 -4 ⁇ m, and the temperature coefficient of resistance (TCR) is greater than 600ppm /°C, the functions of heating and self-temperature control of the heating component 10 can be realized.
- TCR temperature coefficient of resistance
- the heating element 11 takes into account both the toughness of the metal and the high strength of the ceramic in terms of mechanical properties, so that the heating element 11 can have a higher bending strength .
- the mass proportion of metal in the heating element 11 is high, and the resistivity of the metal is stable, not affected by stoichiometric ratio and sintering atmosphere, so that the heating element 11 has high reproducibility in preparation and high resistivity stability.
- the resistivity of the heating element 11 can be made to be 4 ⁇ 10 -6 ⁇ m to 8 ⁇ 10 -4 ⁇ m, and the temperature coefficient of resistance of the heating element 11 can be greater than 600ppm/°C , which fills the application range of conventional heating resistors at present, can meet the requirements of some specific heating-not-burning aerosol forming devices on the resistivity of heating components 10, and can realize heating and self-temperature control functions.
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Abstract
本申请涉及电子雾化器技术领域,具体是涉及一种发热组件、发热组件的制备方法及电子雾化装置。其中,发热组件包括发热体,所述发热体的材料由金属和陶瓷组成,其中,所述发热体中,所述金属的质量占比为40%~75%,所述陶瓷的质量占比为25%~60%。通过质量占比40%~75%的金属和质量占比为25%~60%的陶瓷制备的发热体,其电阻率大于合金电阻的电阻率小于热敏电阻的电阻率,在对气溶胶形成基质进行加热形成气溶胶时,能够满足一些特定的发热不燃烧气溶胶形成装置对发热组件电阻率的要求。
Description
相关申请的交叉引用
本申请基于2021年11月9日提交的中国专利申请202111337607.5主张其优先权,此处通过参照引入其全部的记载内容。
本申请涉及电子雾化器技术领域,具体是涉及一种发热组件、发热组件的制备方法及电子雾化装置。
现有的加热不燃烧气溶胶形成装置,其加热方式通常为管式***加热或中心嵌入加热。管式***加热是指加热管围绕于气溶胶形成基质外以对气溶胶形成基质进行加热;中心嵌入加热是将加热组件***气溶胶形成基质内以对气溶胶形成基质进行加热。其中,加热组件主要采用陶瓷或者经绝缘处理的金属作基底,然后在基底上印刷或镀膜电阻发热线路,并经高温处理后使电阻发热线路固定在基底上而形成。
目前的加热组件主要包括合金电阻和热敏电阻。其中,合金电阻的电阻率一般小于10
-7Ω·m,热敏电阻一般大于10
-2Ω·m。但是在实际使用过程中,对于一些特定的发热不燃烧气溶胶形成装置的发热组件,由于其功率等因素限制,使得合金电阻和热敏电阻的电阻率不能满足使用要求。
发明内容
有鉴于此,本申请提供一种发热组件、发热组件的制备方法及电子雾化装置,以解决现有技术中合金电阻和热敏电阻的电阻率不能满足使用要求的技术问题。
为了解决上述技术问题,本申请提供的第一个技术方案为:提供一 种发热组件,包括发热体,所述发热体的材料由金属和陶瓷组成,其中,所述发热体中,所述金属的质量占比为40%~75%,所述陶瓷的质量占比为25%~60%。
其中,所述金属包括镍、铁、钴、铜、钛、铝和不锈钢中的至少一种。
其中,所述陶瓷包括氧化铝、氧化锆、氧化硅、氧化钇、氧化镧、氧化铈和氧化镁中的至少一种。
其中,所述陶瓷为掺杂陶瓷,所述陶瓷中掺杂的元素用于提高陶瓷相的稳定性以及韧性。
其中,所述发热体的电阻率为4×10
-6Ω·m~8×10
-4Ω·m。
其中,所述发热体的电阻温度系数大于600ppm/℃。
其中,所述发热体具有开口槽,所述开口槽沿所述发热体的长度方向开设于所述发热体上,且所述开口槽沿发热体长度方向的长度为发热体的长度的50%-95%。
其中,所述发热体为平板状,且所述发热体包括片状的相背的两个表面为等腰三形的尖头部和相背的两个表面为矩形的连接在尖头部底边的主体部。
其中,所述发热体为柱状,且所述发热体包括圆锥状的尖头部和圆柱状的连接在尖头部底面的主体部。
其中,还包括有填充体,所述填充体填充于所述开口槽内,且所述填充体的电阻率大于8×10
-3Ω。
其中,还包括固定基座和导线,所述固定基座设于所述发热体的一端;所述导线连接于所述发热体设置有所述固定基座的一端,用于与电源组件电连接,以为所述发热体供电。
其中,所述固定基座设置于所述开口槽的开口端。
为了解决上述技术问题,本申请提供的第二个技术方案为:提供一种电子雾化装置,包括壳体、电源组件以及发热组件;所述电源组件设于所述壳体内;所述发热组件设于所述壳体内且与所述电源组件连接,所述电源组件为所述发热组件供电;其中,所述发热组件为上述所述的发热组件。
本申请的有益效果:区别于现有技术,本申请中的发热组件包括发热体,发热体包括金属和陶瓷,其中,金属的质量占比为40%~75%,陶瓷的质量占比为25%~60%。由该配比制成的发热体,其电阻率大于合金电阻的电阻率小于热敏电阻的电阻率,在对气溶胶形成基质进行加热时,能够满足一些特定的发热不燃烧气溶胶形成装置对发热组件电阻率的要求。
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图。
图1为本申请实施例提供的发热组件的结构示意图;
图2为本申请实施例提供的发热组件的第一俯视图;
图3为本申请实施例提供的发热组件的第二俯视图;
图4为本申请实施例提供的发热组件的第三俯视图;
图5为本申请实施例提供的发热组件的另一结构示意图;
图6为本申请另一实施例提供的发热组件的结构示意图;
图7为本申请实施例提供的电子雾化装置的结构示意图;
图8为本申请实施例提供的发热组件的制备方法流程图;
图9为另一实施例提供的发热组件的制备方法流程图。
下面结合附图和实施例,对本申请作进一步的详细描述。特别指出的是,以下实施例仅用于说明本申请,但不对本申请的范围进行限定。同样的,以下实施例仅为本申请的部分实施例而非全部实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本申请保护的范围。
本申请中的术语“第一”、“第二”、“第三”仅用于描述目的,而不能 理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括至少一个该特征。本申请的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。本申请实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等,如果该特定姿态发生改变时,则该方向性指示也相应地随之改变。本申请实施例中的术语“包括”和“具有”以及它们任何变形,意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、***、产品或设备没有限定于已列出的步骤或单元,而是可选地还包括没有列出的步骤或单元,或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或组件。
在本文中提及“实施例”意味着,结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例,也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是,本文所描述的实施例可以与其它实施例相结合。
请参阅图1,为本申请实施例提供的发热组件的结构示意图。发热组件10包括发热体11、固定基座13和导线14。发热体11用于在***气溶胶形成基质后,对气溶胶形成基质进行不燃烧加热,以使用户便于吸食。固定基座13设于发热体11的一端,用于固定安装发热体11于电子雾化装置内。导线14连接于发热体11设置有固定基座13的一端,用于与电源组件30(如图7所示)电连接,以为发热体11供电。可以理解的是,固定基座13与导线14为可选结构。
其中,发热体11通过将金属材料和陶瓷材料混合后烧结而成。在烧结过程中,金属相与陶瓷相不发生化学反应和高温化学扩散,所以发热体11的电阻率稳定性高。其电阻率大于合金电阻的电阻率的10
-7Ω·m,小于热敏电阻的电阻率10
-2Ω·m,介于合金电阻的电阻率与热敏电阻的电阻率之间,填补了目前常规发热电阻的应用范围,能够满足一些特定的加热不燃烧气溶胶形成装置对发热组件10的电阻率的要求。
具体地,发热体11的材料包括金属和陶瓷,发热体11中金属的质量占比为40%~75%,陶瓷的质量占比为25%~60%。也就是说,发热体11中,金属材料的质量占发热体11总质量的百分比为40%~75%,陶瓷材料的质量占发热体11总质量的百分比为25%~60%。
进一步的,金属包括镍、铁、钴、铜、钛、铝和不锈钢中的至少一种。可以理解的,镍、铁、钴、铜、钛、铝和不锈钢中的至少一种,作为导电材料加入发热体11中,在发热体11供电后,对气溶胶形成基质进行不燃烧加热。其中,不锈钢包括316L不锈钢、304不锈钢以及430不锈钢中的一种或多种,也可以为其他种类的不锈钢。
进一步的,陶瓷包括氧化铝、氧化锆、氧化硅、氧化钇、氧化镧、氧化铈和氧化镁中的至少一种。可以理解的,因金属具有较低的电阻率和较高的电阻温度系数(TCR),为制成电阻率介于10
-7Ω·m与10
-2Ω·m之间的发热体11,需要加入金属氧化物、无机非金属或者非不锈钢金属对金属的电阻率进行调节。在本实施中,陶瓷选用氧化铝、氧化锆、氧化硅、氧化钇、氧化镧、氧化铈和氧化镁中的至少一种,用于调节发热体11的电阻率。此外,陶瓷也能对发热体11的强度进行增强,便于气溶胶形成基质***至发热体11。
在一个实施例中,发热体11中金属的质量占比为大于70%,陶瓷的质量占比小于30%。由于金属的质量占比较高,使得发热体11具有较低的电阻率。在另一个实施例中,发热体11中金属的质量占比为小于50%,陶瓷的质量占比大于50%。由于金属的质量占比较低,使得发热体11具有较高电阻率。
进一步的,为提高陶瓷相的结构稳定性、改善陶瓷相的机械性能以及提高陶瓷相的韧性,陶瓷为掺杂陶瓷。例如,在一实施例中,可以钇对氧化锆进行掺杂,以提高氧化锆的相结构稳定性。在另一实施例中,可以采用锆对氧化铝进行掺杂,以提高氧化铝的韧性。此外特别说明,不管使用什么元素和使用多少掺杂量对本申请中的陶瓷相进行掺杂取代,都在本申请的保护范围内。
进一步的,发热体11的电阻率为4×10
-6Ω·m~8×10
-4Ω·m,发热体11的电阻温度系数大于600ppm/℃,优选大于700ppm/℃。具体的,发 热体11的电阻率与金属和陶瓷的质量占比、金属和陶瓷选取的材料成分、金属和陶瓷材料的粒径以及烧结工艺相关。在一实施例中,可采用金属的质量占比为40%~75%,陶瓷的质量占比为25%~60%,金属为镍、铁、钴、铜、钛、铝和不锈钢中的至少一种,陶瓷为氧化铝、氧化锆、氧化硅、氧化钇、氧化镧、氧化铈和氧化镁中的至少一种,烧结真空度为10
-3Pa~10
-1Pa,烧结温度为1200℃~1500℃进行发热体11的制备,以满足发热体11的电阻率以及电阻温度系数的要求。
进一步的,发热体11还具有开口槽12,开口槽12沿发热体11的长度方向开设于发热体11上,且开口槽12沿发热体11长度方向的长度为发热体11的主体长度的50%-95%。
可以理解的是,本申请中,发热体11的形状包括圆柱体、圆锥体、长方体、薄片状等其中的一种或多种组合。具体的,在一实施例中,例如图1和图2所示,发热体11包括片状的相背的两个表面为等腰三形的尖头部和圆柱状的连接在尖头部底面的主体部。在一实施例中,如图1和图3所示,发热体11为平板状,发热体11包括片状的相背的两个表面为等腰三形的尖头部和相背的两个表面为矩形的连接在尖头部底边的主体部。在另一实施例中,如图1和图4所示,发热体11为柱状,发热体11包括圆锥状的尖头部和圆柱状的连接在尖头部底面的主体部。其中,上述实施例中的尖头部,是为了在气溶胶形成基质***发热体11时,减小气溶胶形成基质与发热体11之间的摩擦,便于气溶胶形成基质***。主体部上具有开口槽12,且开口槽12沿发热体11长度方向的长度为尖头部和主体部总长度的50%-95%。此外,在一实施例中,为方便清理发热体11上的气溶胶形成基质,保持发热体11的清洁,开口槽12为盲槽。在另一实施例中,开口槽12可设为镂空。
进一步可以理解的是,为便于发热体11对靠近固定基座13的温度场与远离固定基座13的温度场进行调控,开口槽12的槽宽可从远离固定基座13一端向靠近固定基座13一端均相等,如图1所示。或者开口槽12的槽宽可从远离固定基座13一端向靠近固定基座13一端逐渐增大或减小的中轴线对称结构。如图5所示,开口槽12的槽宽为从远离固定基座13一端向靠近固定基座13一端逐渐增大。
进一步可以理解的是,开口槽12沿发热体11长度方向的长度为发热体11长度的50%-95%,如此设计,以使发热体11远离固定基座13的一端温度场比较集中,对***发热体11上的气溶胶形成基质进行不燃烧加热,使发热体11靠近固定基座13的一端温度较低,减少热量损失。其中,发热体11的主体为发热体11除去尖端以外的部分。
参阅图6,为本申请另一实施例提供的发热组件的结构示意图。进一步,发热体11还包括填充体15,填充体15填充于开口槽12内,且填充体15的材料为电阻率大于8×10
-3Ω的材料。在本实施例中,填充体15包括陶瓷和玻璃中的至少一种,陶瓷为氧化铝、氧化锆、氧化硅、氧化钇、氧化镧、氧化铈和氧化镁中的至少一种。
进一步,发热体11表面还可以设置电极(图未示),以便于连接导线14。在一个实施例中,在发热体11靠近固定基座13的两个自由端外表面分别设置导电金属浆料作为电极。
固定基座13的形状和结构不限,只要能够固定发热体11即可。在一个实施例中,固定基座13为圆形树脂板。导线14可以采用金属导线,例如,包漆铜导线。
请参阅图7,为本申请提供的电子雾化装置的结构示意图。电子雾化装置包括壳体20、电源组件30以及发热组件10。电源组件30和发热组件10均安装于壳体20内,电源组件30与发热组件10电连接,电源组件30用于向发热组件10供电。壳体20的形状和材料不限,在一实施例中,壳体20为绝缘中空圆柱体。在一实施例中,电源组件30具体可包括充电的锂离子电池和PCB电路板。电源组件30还包括支架、咪头等必要元件。
其中,发热组件10可以为上述任意实施例的发热组件10,此处不再赘述。
本实施提供的电子雾化装置,通过设置发热组件10,在***气溶胶形成基质后进行不燃烧加热,以便于用户便于吸食。其中,发热组件10的发热体11电阻率4×10
-6Ω·m~8×10
-4Ω·m,发热体11的电阻温度系数大于600ppm/℃,填补了目前常规发热电阻的应用范围,能够满足电子雾化装置对发热组件10的电阻率的要求,可实现发热、自控温功能。
请参阅图8,为本申请提供的发热组件的制备方法流程图。发热组件10的制备方法具体包括:
步骤S1:将金属粉料、陶瓷粉料和混合剂进行混合得到混合物,且金属的质量占比为40%~75%,陶瓷的质量占比为25%~60%。
具体地,通过球磨的方式将金属粉料、陶瓷粉料和混合剂进行混合。
步骤S2:对混合物进行压制以形成素坯。
具体的,可采用注塑法、挤出或者干压法制备素坯。其中,以注塑法为例进行说明,即将混合得到混合物置于注射机中,加热使之变为流体,用活柱压入模型,冷却后脱模即得素坯。
步骤S3:对素坯进行排胶以及烧结。
具体的,将成形素坯置于气氛炉或者真空炉中进行排胶和烧结。烧结在真空炉中进行,真空度为10
-3Pa~10
-1Pa,烧结温度为1200℃~1500℃。其中,在排胶过程中,素坯中的混合剂被消耗掉,以使得烧结完成的发热体11只包含有金属和陶瓷。
此外,请参阅图9,在完成步骤S3之后,还可进行如下步骤:
步骤S4:对烧结完成的发热体11按照实际尺寸进行机械加工和精修,以使发热体11符合实际需要尺寸,便于安装于电子雾化装置内。
步骤S5:在气氛炉或者真空炉中将导线14和固定基座13钎焊在发热体11上。其中,固定基座13钎焊在发热体11一端部,导线14钎焊在发热体11靠近固定基座13的一端。
步骤S6:在发热体11的表面上制备釉层。
具体的,将发热体11放置于气氛炉或者真空炉中烧结,以为发热体11上制备釉层,其中,釉层用于保护发热体11,在一定程度上可延长发热体11的使用寿命。
在本实施例中可以理解的是,在制备发热组件10时,步骤S5和步骤S6的顺序可调换。即在发热体11上钎焊基座固定以及导线14之后,可制备釉层;也可在发热体11表面制备釉层之后,将固定基座13以及导线14钎焊在发热体11上。其中,制备釉层的时候需将发热体11表面的电极暴露出来。
值得注意的是,在本实施例中,S6并非是必须步骤,即使在没有 S6的情况下,由本案制备出的发热体11性能依然优异。
进一步可以理解的是,通过上述制备方法制成的发热组件10,其中,发热体11的电阻率为4×10
-6Ω·m~8×10
-4Ω·m,电阻温度系数大于600ppm/℃。
下面通过几个具体的实施例,从金属和陶瓷的质量占比、金属和陶瓷的选取材料成分、金属和陶瓷材料的粒径以及烧结的真空度和温度等方面对上述制备方法进行举例说明。
实施例1:
(1)将粒径为1μm的镍粉按质量百分比40%,粒径为10μm的氧化铝粉按质量百分比为60%进行配比,然后加入适量的分散剂三乙醇胺(TEA),在球磨机中湿磨30h得到混合粉。
(2)将混合料放入60℃的真空干燥箱中干燥。
(3)向干燥后的混合料中加入质量百分比为5%的PVB溶液作为成型粘结剂,并充分搅拌混合。
(4)将上述混合料倒入研钵中进行造粒。
(5)将上述造粒粉倒入干压模具中,在100MPa的成型压力下将粉料压成目标形状,即形成素坯。
(6)将上述成型好的素坯置于60℃的真空干燥箱中干燥4h。
(7)将上述干燥后的素坯装于管式氢气气氛炉中进行排胶,升温速率为2℃/min,排胶温度为450℃,保温时间为60min。
(8)将上述排胶后的素坯放入真空炉中进行烧结,真空度为10
-2Pa,烧结温度为1400℃,烧结时间为120min。
按照上述工艺制备的金属陶瓷发热体的物理性能参数如下:
抗弯强度,MPa | 电阻率,Ω.m | TCR,ppm/℃(RT-300℃) |
420 | 8×10 -4 | 6400 |
实施例2
(1)将粒径为10μm的镍粉按质量百分比75%,粒径为1μm的氧化铝粉按质量百分比为25%进行配比,然后加入适量的分散剂三乙醇胺(TEA),在球磨机中湿磨30h得到混合粉。
(2)将混合料放入60℃的真空干燥箱中干燥。
(3)向干燥后的混合料中加入质量百分比为5%的PVB溶液作为成型粘结剂,并充分搅拌混合。
(4)将上述混合料倒入研钵中进行造粒。
(5)将上述造粒粉倒入干压模具中,在100MPa的成型压力下将粉料压成目标形状,即形成素坯。
(6)将上述成型好的素坯置于60℃的真空干燥箱中干燥4h。
(7)将上述干燥后的素坯装于管式氢气气氛炉中进行排胶,升温速率为2℃/min,排胶温度为450℃,保温时间为60min。
(8)将上述排胶后的素坯放入真空炉中进行烧结,真空度为10
-2Pa,烧结温度为1400℃,烧结时间为120min。
按照上述工艺制备的金属陶瓷发热体的物理性能参数如下:
抗弯强度,MPa | 电阻率,Ω.m | TCR,ppm/℃(RT-300℃) |
510 | 4×10 -6 | 6500 |
实施例3
(1)将粒径为1μm的镍粉按质量百分比40%,粒径为5μm的氧化锆粉按质量百分比为60%进行配比,然后加入适量的分散剂三乙醇胺(TEA),在球磨机中湿磨30h得到混合粉。
(2)将混合料放入60℃的真空干燥箱中干燥;
(3)向干燥后的混合料中加入质量百分比为5%的PVB溶液作为成型粘结剂,并充分搅拌混合;
(4)将上述混合料倒入研钵中进行造粒;
(5)将上述造粒粉倒入干压模具中,在80MPa的成型压力下将粉料压成目标形状,即形成素坯。
(6)将上述成型好的素坯置于60℃的真空干燥箱中干燥4h。
(7)将上述干燥后的素坯装于管式氢气气氛炉中进行排胶,升温速率为2℃/min,排胶温度为450℃,保温时间为60min。
(8)将上述排胶后的素坯放入真空炉中进行烧结,真空度为10
-2Pa,烧结温度为1420℃,烧结时间为120min。
按照上述工艺制备的金属陶瓷发热体的物理性能参数如下:
抗弯强度,MPa | 电阻率,Ω□m | TCR,ppm/℃(RT-300℃) |
380 | 6.3×10 -5 | 6320 |
实施例4
(1)将粒径为10μm的316L不锈钢粉按质量百分比40%,粒径为1μm的氧化锆粉按质量百分比为60%进行配比,然后加入适量的分散剂三乙醇胺(TEA),在球磨机中湿磨40h得到混合粉。
(2)将混合料放入60℃的真空干燥箱中干燥。
(3)向干燥后的混合料中加入质量百分比为5.0%的PVB溶液作为成型粘结剂,并充分搅拌混合。
(4)将上述混合料倒入研钵中进行造粒。
(5)将上述造粒粉倒入干压模具中,在200MPa的成型压力下将粉料压成目标形状,即形成素坯。
(6)将上述成型好的素坯置于60℃的真空干燥箱中干燥4h;
(7)将上述干燥后的素坯装于管式氢气气氛炉中进行排胶,升温速率为2℃/min,排胶温度为450℃,保温时间为60min。
(8)将上述排胶后的素坯放入真空炉中进行烧结,真空度为10
-2Pa,烧结温度为1350℃,烧结时间为120min。
按照上述工艺制备的金属陶瓷发热体的物理性能参数如下:
抗弯强度,MPa | 电阻率,Ω.m | TCR,ppm/℃(RT-300℃) |
400 | 3.8×10 -5 | 1050 |
上述工艺制备的金属陶瓷满足电阻率和TCR要求,可实现发热、自控温功能。
实施例5
(1)将粒径为10μm的430L不锈钢粉按质量百分比40%,粒径为1μm的氧化锆粉按质量百分比为60%进行配比,然后加入适量的分散剂三乙醇胺(TEA),在球磨机中湿磨40h得到混合粉。
(2)将混合料放入60℃的真空干燥箱中干燥。
(3)向干燥后的混合料中加入质量百分比为5.0%的PVB溶液作为成型粘结剂,并充分搅拌混合。
(4)将上述混合料倒入研钵中进行造粒。
(5)将上述造粒粉倒入干压模具中,在200MPa的成型压力下将粉 料压成目标形状,即形成素坯。
(6)将上述成型好的素坯置于60℃的真空干燥箱中干燥4h。
(7)将上述干燥后的素坯装于管式氢气气氛炉中进行排胶,升温速率为2℃/min,排胶温度为450℃,保温时间为60min。
(8)将上述排胶后的素坯放入真空炉中进行烧结,真空度为10-
2Pa,烧结温度为1400℃,烧结时间为120min。
按照上述工艺制备的金属陶瓷发热体的物理性能参数如下:
抗弯强度,MPa | 电阻率,Ω□m | TCR,ppm/℃(RT-300℃) |
250 | 3.2×10 -5 | 1000 |
通过上述1-5实施例可以发现:
(1)在相对比较低的真空度和烧结温度下,即可以实现发热体11的致密化烧结。且在整个烧结过程中,金属相与陶瓷相不发生化学反应和高温化学扩散,使得金属相和陶瓷相材料间具有高温化学相容性好和烧结活性高的特点。
(2)发热组件10的原材料来源广泛,且价格低廉,所以发热组件10的材料成本低。又因金属相和陶瓷相烧结活性高和加工性能好,所以制备发热组件10的工艺简单,制造成本也低。
(3)通过上述制备方法,所获取的发热组件10能够满足,发热体11的电阻率为4×10
-6Ω·m~8×10
-4Ω·m,电阻温度系数(TCR)大于600ppm/℃的要求,可实现发热组件10发热以及自控温的功能。
(4)因发热体11中金属质量百分比较高,且金属韧性高,所以发热体11在力学性能上兼顾了金属的韧性和陶瓷的高强度,使得发热体11可以具备较高的抗弯强度。
(5)发热体11中金属质量占比高,且金属的电阻率稳定,不受化学计量比和烧结气氛影响,使得发热体11在制备上可重现性高,电阻率稳定性也高。
综上,通过上述发热组件10的制备方法,能够使发热体11的电阻率为4×10
-6Ω·m~8×10
-4Ω·m,发热体11的电阻温度系数大于600ppm/℃,填补了目前常规发热电阻的应用范围,能够满足一些特定的发热不燃烧气溶胶形成装置对发热组件10电阻率的要求,可实现发 热、自控温功能。
以上所述仅为本申请的部分实施例,并非因此限制本申请的保护范围,凡是利用本申请说明书及附图内容所作的等效装置或等效流程变换,或直接或间接运用在其它相关的技术领域,均同理包括在本申请的专利保护范围内。
Claims (13)
- 一种发热组件,其中,包括:发热体,所述发热体的材料由金属和陶瓷组成,其中,所述发热体中,所述金属的质量占比为40%~75%,所述陶瓷的质量占比为25%~60%。
- 根据权利要求1所述的发热组件,其中,所述金属包括镍、铁、钴、铜、钛、铝和不锈钢中的至少一种。
- 根据权利要求1所述的发热组件,其中,所述陶瓷包括氧化铝、氧化锆、氧化硅、氧化钇、氧化镧、氧化铈和氧化镁中的至少一种。
- 根据权利要求1所述的发热组件,其中,所述陶瓷为掺杂陶瓷,所述陶瓷中掺杂的元素用于提高陶瓷相的稳定性以及韧性。
- 根据权利要求1所述的发热组件,其中,所述发热体的电阻率为4×10 -6Ω·m~8×10 -4Ω·m。
- 根据权利要求1所述的发热组件,其中,所述发热体的电阻温度系数大于600ppm/℃。
- 根据权利要求1所述的发热组件,其中,所述发热体具有开口槽,所述开口槽沿所述发热体的长度方向开设于所述发热体上,且所述开口槽沿发热体长度方向的长度为发热体的长度的50%-95%。
- 根据权利要求7所述的发热组件,其中,所述发热体为平板状,且所述发热体包括片状的相背的两个表面为等腰三形的尖头部和相背的两个表面为矩形的连接在尖头部底边的主体部。
- 根据权利要求7所述的发热组件,其中,所述发热体为柱状,且所述发热体包括圆锥状的尖头部和圆柱状的连接在尖头部底面的主体部。
- 根据权利要求7所述的发热组件,其中,还包括有填充体,所述填充体填充于所述开口槽内,且所述填充体的电阻率大于8×10 -3Ω。
- 根据权利要求7所述的发热组件,其中,还包括:固定基座,设于所述发热体的一端;导线,连接于所述发热体设置有所述固定基座的一端,用于与电源 组件电连接,以为所述发热体供电。
- 根据权利要求11所述的发热组件,其中,所述固定基座设置于所述开口槽的开口端。
- 一种电子雾化装置,其中,包括:壳体;电源组件,设于所述壳体内;发热组件,设于所述壳体内且与所述电源组件连接,所述电源组件为所述发热组件供电;其中,所述发热组件为权利要求1-10任意一项所述的发热组件。
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