WO2023082939A1 - Low-noise amplifier of ultra-wideband communication standard, and radio frequency chip - Google Patents

Low-noise amplifier of ultra-wideband communication standard, and radio frequency chip Download PDF

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Publication number
WO2023082939A1
WO2023082939A1 PCT/CN2022/125454 CN2022125454W WO2023082939A1 WO 2023082939 A1 WO2023082939 A1 WO 2023082939A1 CN 2022125454 W CN2022125454 W CN 2022125454W WO 2023082939 A1 WO2023082939 A1 WO 2023082939A1
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Prior art keywords
transistor
capacitor
resistor
stage circuit
terminal
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PCT/CN2022/125454
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French (fr)
Chinese (zh)
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尚鹏飞
周永峰
郭嘉帅
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深圳飞骧科技股份有限公司
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Publication of WO2023082939A1 publication Critical patent/WO2023082939A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only

Definitions

  • the utility model relates to the field of amplifier circuits, in particular to an ultra-wideband communication low-noise amplifier and a radio frequency chip.
  • the low noise amplifier (Low Noise Amplifier, referred to as LNA) has assumed an increasingly important role in the communication system.
  • the low noise amplifier is a very important module of the RF front end in the communication system. Its role is Process the signal received by the antenna and reduce the noise of the communication module.
  • the performance of the low noise amplifier directly determines the sensitivity of the receiver in the communication system and then the signal spectrum template, etc., thereby affecting and determining various performance indicators of the entire communication system.
  • UWB Ultra Wide Band
  • the working bandwidth of the UWB low noise amplifier is further expanded, and it needs to cover the broadband frequency band from 3.1GHz to 10.6GHz.
  • the ultra-wide operating frequency band enables the UWB low-noise amplifier to solve the problem of high-speed connections such as short-distance video data transmission. Among them, it provides a higher transmission rate and is very suitable for high-performance applications.
  • the performance index of the UWB low-noise amplifier is limited by the circuit in the case of a wider operating bandwidth.
  • the UWB low-noise amplifier needs to meet the following necessary conditions: the first point, broadband matching, to meet the return loss as small as possible in the entire frequency band.
  • the second point is a large enough gain to amplify the received weak RF signal.
  • the third point, low noise can improve the sensitivity of the whole system.
  • the fourth point, low power consumption improves the service life of the battery of the whole machine.
  • the circuit layout area is as small as possible to save the production cost of the corresponding chip.
  • the utility model proposes an ultra-wideband communication low noise amplifier and radio frequency chip with a wide operating frequency and high performance index.
  • an embodiment of the present invention provides an ultra-wideband communication low-noise amplifier, the low-noise amplifier includes a first amplification stage circuit, a second amplification stage circuit and an output follower stage circuit connected in sequence;
  • the first amplifying stage circuit is used to receive an externally input radio frequency signal to realize broadband input matching of common gate input impedance and source impedance;
  • the second amplification stage circuit is used for signal amplification
  • the output following stage circuit is used to realize broadband output matching
  • the first amplifying stage circuit includes a first capacitor, a second capacitor, a first transistor, a first inductor and a first resistor;
  • the first end of the first capacitor is used as the input end of the ultra-wideband communication low noise amplifier
  • the second end of the first capacitor is respectively connected to the first end of the first inductor and the source of the first transistor, and the second end of the first inductor is connected to ground;
  • the gate of the first transistor is connected to a first bias voltage
  • the drain of the first transistor is respectively connected to the second end of the first resistor and the first end of the second capacitor, and the first The first end of a resistor is connected to the power supply voltage
  • the second end of the second capacitor is connected to the input end of the second amplifying stage circuit
  • the second amplifying stage circuit includes a second resistor, a third resistor, a second inductor, a third capacitor, a second transistor, and a third transistor;
  • the gate of the second transistor is used as the input terminal of the second amplifying stage circuit, and the gate of the second transistor is respectively connected to the second terminal of the second capacitor and the second terminal of the third resistor. end, the first end of the third resistor is connected to a third bias voltage;
  • the source of the second transistor is connected to ground, and the drain of the second transistor is connected to the source of the third transistor;
  • the gate of the third transistor is connected to the second bias voltage, and the drain of the third transistor is respectively connected to the input end of the output follower circuit, the second end of the second inductor, the first the second end of the second resistor and the second end of the third capacitor;
  • the first end of the second inductor, the first end of the second resistor, and the first end of the third capacitor are all connected to a power supply voltage
  • the first transistor, the second transistor and the third transistor are all MOS transistors.
  • the output follower circuit includes a fourth transistor, a first current source and a fourth capacitor;
  • the gate of the fourth transistor is used as the input terminal of the output follower circuit, and the drain of the fourth transistor is connected to a power supply voltage;
  • the source of the fourth transistor is respectively connected to the positive terminal of the first current source and the first terminal of the fourth capacitor, and the negative terminal of the first current source is connected to ground;
  • the second terminal of the fourth capacitor serves as the output terminal of the output follower circuit
  • the fourth transistor is a MOS transistor.
  • both the first capacitor and the second capacitor are parameter-adjustable capacitors
  • the first inductance is a parameter-adjustable inductor
  • the first resistor is a parameter-adjustable resistor, so as to adjust the first
  • the operating frequency of the amplifier circuit is 3.1GHz.
  • both the second resistor and the third resistor are parameter-adjustable resistors
  • the second inductance is a parameter-adjustable inductor
  • the third capacitor is a parameter-adjustable capacitor, so as to adjust the second The operating frequency of the amplifier circuit is 10.6GHz.
  • the embodiment of the present utility model also provides a radio frequency chip, including the ultra-wideband communication low noise amplifier described in any one of the above.
  • the embodiment of the present utility model also provides a low-noise amplifier for ultra-wideband communication, the low-noise amplifier includes a first amplification stage circuit, a second amplification stage circuit, and an output follower stage circuit connected in sequence;
  • the first amplifying stage circuit is used to receive an externally input radio frequency signal to realize broadband input matching of common base input impedance and emitter impedance;
  • the second amplification stage circuit is used for signal amplification
  • the output following stage circuit is used to realize broadband output matching
  • the first amplifying stage circuit includes a fifth capacitor, a sixth capacitor, a fifth transistor, a third inductor and a fourth resistor;
  • the first end of the fifth capacitor is used as the input end of the ultra-wideband communication low noise amplifier
  • the second end of the fifth capacitor is respectively connected to the first end of the third inductor and the emitter of the fifth transistor, and the second end of the third inductor is connected to ground;
  • the base of the fifth transistor is connected to the fourth bias voltage
  • the collector of the fifth transistor is respectively connected to the second end of the fourth resistor and the first end of the sixth capacitor, the first The first ends of the four resistors are connected to the power supply voltage
  • the second end of the sixth capacitor is connected to the input end of the second amplifying stage circuit
  • the second amplifying stage circuit includes a fifth resistor, a sixth resistor, a fourth inductor, a seventh capacitor and a sixth transistor;
  • the base of the sixth transistor is used as the input end of the second amplifying stage circuit, and the base of the sixth transistor is respectively connected to the second end of the sixth capacitor and the second end of the sixth resistor. terminal, the first terminal of the sixth resistor is connected to the fifth bias voltage;
  • the emitter of the sixth transistor is connected to ground, and the collector of the sixth transistor is respectively connected to the input terminal of the output follower circuit, the second terminal of the fourth inductor, and the first terminal of the fifth resistor. two terminals and the second terminal of the seventh capacitor;
  • the first end of the fourth inductor, the first end of the fifth resistor, and the first end of the seventh capacitor are all connected to a power supply voltage
  • both the fifth transistor and the sixth transistor are BJT transistors.
  • the output follower circuit includes a seventh transistor, a second current source and an eighth capacitor;
  • the base of the seventh transistor is used as the input terminal of the output follower circuit, and the collector of the seventh transistor is connected to a power supply voltage;
  • the emitter of the seventh transistor is respectively connected to the positive terminal of the second current source and the first terminal of the eighth capacitor, and the negative terminal of the second current source is connected to ground;
  • the second terminal of the eighth capacitor is used as the output terminal of the output follower circuit
  • the seventh transistors are all BJT transistors.
  • both the fifth capacitor and the sixth capacitor are parameter-adjustable capacitors
  • the third inductor is a parameter-adjustable inductor
  • the fourth resistor is a parameter-adjustable resistor, so as to adjust the first
  • the operating frequency of the amplifier circuit is 3.1GHz.
  • both the fifth resistor and the sixth resistor are parameter-adjustable resistors
  • the fourth inductance is a parameter-adjustable inductor
  • the seventh capacitor is a parameter-adjustable capacitor, so as to adjust the second The operating frequency of the amplifier circuit is 10.6GHz.
  • the embodiment of the present utility model further provides a radio frequency chip, the chip includes the ultra-wideband communication low-noise amplifier described in any one of the above third aspects.
  • the ultra-wideband communication low-noise amplifier and the radio frequency chip of the utility model are provided with a first amplifying stage circuit, a second amplifying stage circuit and an output follower stage circuit which are sequentially connected.
  • the first amplifying stage circuit forms a common gate amplifying stage circuit through the first capacitor, the second capacitor, the first transistor, the first inductor and the first resistor, and the working frequency of the circuit is adjusted to a low frequency (near 3.1 GHz).
  • the second amplifying stage circuit constitutes a cascode amplifying stage circuit through the second resistor, the third resistor, the second inductance, the third capacitor, the second transistor and the third transistor, and the operating frequency of the circuit is adjusted at a high frequency (10.6 GHz).
  • the above-mentioned circuit structure in which the first-stage amplifying circuit resonates at the low frequency band and the second-stage amplifying circuit resonates at the high-frequency point makes the gain reduction of the first-stage amplifying circuit at high frequencies obtain the high frequency of the second-stage amplifying circuit.
  • Gain compensation at the high frequency, two-stage balanced amplification realizes the extension of the bandwidth, meets the performance index requirements of the ultra-wideband communication standard, so that the operating frequency bandwidth and performance index of the ultra-wideband communication low noise amplifier and the chip of the utility model high.
  • Fig. 1 is a circuit structure diagram of an ultra-wideband communication low noise amplifier of the utility model embodiment
  • Fig. 2 is a schematic diagram of the gain-frequency curve of the first amplification stage circuit of an ultra-wideband communication low-noise amplifier according to an embodiment of the present invention
  • Fig. 3 is a schematic diagram of the gain-frequency curve of the second amplification stage circuit of an ultra-wideband communication low-noise amplifier according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram of a gain-frequency curve of an ultra-wideband communication low-noise amplifier according to an embodiment of the present invention
  • Fig. 5 is a circuit structure diagram of an ultra-wideband communication low-noise amplifier in Embodiment 2 of the present invention.
  • the embodiment of the utility model provides an ultra-wideband communication low noise amplifier 100, which is used in a communication system of the ultra-wideband communication standard.
  • FIG. 1 is a circuit structure diagram of an ultra-wideband communication low noise amplifier 100 according to an embodiment of the present invention.
  • the ultra-wideband communication low noise amplifier 100 is applied to communication products in the 3.1GHz-10.6GHz operating frequency band.
  • the ultra-wideband communication low noise amplifier 100 in the first embodiment is realized by using MOS transistor technology.
  • the UWB communication low noise amplifier 100 includes a first amplifying stage circuit 1 , a second amplifying stage circuit 2 and an output follower stage circuit 3 connected in sequence.
  • the first amplifying stage circuit 1 is used to receive an externally input radio frequency signal to realize broadband input matching of common gate input impedance and source impedance.
  • the first amplifying stage circuit 1 includes a first capacitor C1, a second capacitor C2, a first transistor M1, a first inductor L1 and a first resistor R1.
  • the circuit structure of the first amplifying stage circuit 1 is:
  • the first terminal of the first capacitor C1 serves as the input terminal RFIN of the ultra-wideband communication low noise amplifier 100 .
  • the second end of the first capacitor C1 is respectively connected to the first end of the first inductor L1 and the source of the first transistor M1, and the second end of the first inductor L1 is connected to the ground GND.
  • the gate of the first transistor M1 is connected to the first bias voltage VG1, and the drain of the first transistor M1 is respectively connected to the second terminal of the first resistor R1 and the first terminal of the second capacitor C2. terminal, and the first terminal of the first resistor R1 is connected to the power supply voltage VDD.
  • the second end of the second capacitor C2 is connected to the input end of the second amplifying stage circuit 2 .
  • the first transistor M1 is a MOS transistor.
  • the operating principle of the first amplifier stage circuit 1 is:
  • the first amplifier stage circuit 1 forms a common gate amplifier stage circuit through the first capacitor C1, the second capacitor C2, the first transistor M1, the first inductor L1 and the first resistor R1.
  • the first transistor M1 is a first-stage amplifier transistor
  • the first capacitor C1 is an input DC blocking capacitor
  • the first resistor R1 is a load resistor of the first amplifier circuit 1
  • the second capacitor C2 is the first
  • the DC blocking capacitance of the amplifier stage circuit 1 and the second amplifier stage circuit 2 the parasitic capacitance of the first inductor L1 and the transistor of the first transistor M1 resonate in the working frequency band
  • the input impedance is the source intrinsic characteristic of the first transistor M1 Input impedance
  • the circuit structure realizes broadband input power matching and preliminary amplification of radio frequency signals.
  • the input terminal RFIN of the ultra-wideband communication low noise amplifier 100 inputs a radio frequency signal through the first capacitor C1 as a DC blocking capacitor and loads it to the source of the first transistor M1, and the generated small signal current is transformed through the first resistor R1 as a load is a small signal voltage, coupled to the input terminal of the second amplifying stage circuit 2 through the second capacitor C2 as a direct capacitor between stages.
  • FIG. 2 is a schematic diagram of a gain-frequency curve of a first amplification stage circuit of an ultra-wideband communication low noise amplifier according to an embodiment of the present invention.
  • the first capacitor C1 and the second capacitor C2 are parameter-adjustable capacitors
  • the first inductor L1 is a parameter-adjustable inductor
  • the first resistor R1 is a parameter-adjustable resistor
  • the parameters of the above-mentioned components are all adjustable, so as to adjust the working frequency of the first amplifying stage circuit 1 to 3.1 GHz.
  • the operating frequency point of the first amplifying stage circuit 1 is set to be adjusted at a low frequency (near 3.1 GHz).
  • the second amplification stage circuit 2 is used for signal amplification.
  • the second amplifying stage circuit 2 includes a second resistor R2, a third resistor R3, a second inductor L2, a third capacitor C3, a second transistor M2, and a third transistor M3.
  • the circuit structure of the second amplifying stage circuit 2 is:
  • the gate of the second transistor M2 is used as the input terminal of the second amplifying stage circuit 2, and the gate of the second transistor M2 is respectively connected to the second terminal of the second capacitor C2 and the third The second terminal of the resistor R3, the first terminal of the third resistor R3 is connected to the third bias voltage VGS2.
  • the source of the second transistor M2 is connected to the ground GND, and the drain of the second transistor M2 is connected to the source of the third transistor M3.
  • the gate of the third transistor M3 is connected to the second bias voltage VG2, and the drain of the third transistor M3 is connected to the input terminal of the output follower circuit 3 and the second terminal of the second inductor L2 respectively. end, the second end of the second resistor R2 and the second end of the third capacitor C3.
  • the first terminal of the second inductor L2, the first terminal of the second resistor R2 and the first terminal of the third capacitor C3 are all connected to the power supply voltage VDD.
  • both the second transistor M2 and the third transistor M3 are MOS transistors.
  • the operating principle of the second amplifier stage circuit 2 is:
  • the second amplifier stage circuit 2 forms a cascode amplifier stage circuit through the second resistor R2, the third resistor R3, the second inductor L2, the third capacitor C3, the second transistor M2 and the third transistor M3.
  • the second transistor M2 is a common-source amplifier tube
  • the third transistor M3 is a common-gate amplifier tube
  • the second inductance L2 is a load inductance
  • the third capacitor C3 is a load capacitor
  • the second resistor R2 is a load resistor
  • the third resistor R3 is a bias resistor.
  • the third bias voltage VGS2 provides a bias voltage for the second transistor M2 through the third resistor R3.
  • the third transistor M3 can increase isolation and withstand voltage.
  • the second inductance L2 is a choke inductance, and resonates with the third capacitor C3, and acts as a load of the second amplifying stage circuit 2 together with the second resistor R2.
  • FIG. 3 is a schematic diagram of a gain-frequency curve of a second amplification stage circuit of an ultra-wideband communication low noise amplifier according to an embodiment of the present invention.
  • the second resistor R2 and the third resistor R3 are parameter-adjustable resistors
  • the second inductor is a parameter-adjustable inductor
  • the third capacitor C3 is a parameter-adjustable capacitor
  • the parameters of the above-mentioned components are all adjustable, so as to adjust the operating frequency of the second amplifier stage circuit 2 to 10.6 GHz.
  • the operating frequency point of the second amplifying stage circuit 2 is adjusted at a high frequency (10.6 GHz).
  • the second amplification stage circuit 2 realizes further amplification of the radio frequency signal.
  • the output follower circuit 3 is used to realize broadband output matching.
  • the output follower circuit 3 includes a fourth transistor M4, a first current source Idc1 and a fourth capacitor C4.
  • the circuit structure of the output following stage circuit 3 is:
  • the gate of the fourth transistor M4 is used as the input terminal of the output follower circuit 3 , and the drain of the fourth transistor M4 is connected to the power supply voltage VDD.
  • the source of the fourth transistor M4 is respectively connected to the positive terminal of the first current source Idc1 and the first terminal of the fourth capacitor C4, and the negative terminal of the first current source Idc1 is connected to the ground GND.
  • the second terminal of the fourth capacitor C4 is used as the output terminal of the output follower circuit 3 . That is to say, the second terminal of the fourth capacitor C4 serves as the output terminal RFOUT of the ultra-wideband communication low noise amplifier 100 at the same time.
  • the fourth transistor M4 is a MOS transistor.
  • the output follower stage circuit 3 adopts source follower configuration transistors, and realizes broadband matching of output impedance and load impedance through proper selection of the size of the fourth transistor M4 and the bias current of the first current source Idc1.
  • the fourth transistor M4 is biased by the first current source Idc1 to realize the impedance matching of the external 50 ohm load connected to the output terminal RFOUT of the UWB communication low noise amplifier 100 .
  • Fig. 4 is a schematic diagram of the gain-frequency curve of an ultra-wideband communication low-noise amplifier according to an embodiment of the present invention.
  • the ultra-wideband communication low noise amplifier 100 covers a broadband frequency band of 3.1GHz-10.6GHz.
  • the gain drop of the first-stage amplifying circuit 1 at high frequencies is compensated by the gain of the second-stage amplifying circuit 2 at high frequencies.
  • the first-stage amplifying circuit 1 of the ultra-wideband communication low-noise amplifier 100 resonates at a low frequency band
  • the second-stage amplifying circuit 2 resonates at a high-frequency point, so that the first-stage amplifying circuit 1 resonates at a high frequency.
  • the gain drop is compensated by the gain compensation at the high frequency of the second-stage amplifying circuit 2, and the two-stage balanced amplification realizes the extension of the bandwidth, so that the working frequency bandwidth of the ultra-wideband communication low-noise amplifier of the present invention is high and the performance index is high .
  • the ultra-wideband communication low noise amplifier 100 meets the performance index requirements of the ultra-wideband communication standard: the first point, wideband matching, to meet the return loss as small as possible in the entire frequency band.
  • the second point is a large enough gain to amplify the received weak RF signal.
  • the third point, low noise can improve the sensitivity of the whole system.
  • the fourth point, low power consumption improves the service life of the battery of the whole machine.
  • Fifth point the circuit layout area is as small as possible to save the production cost of the corresponding chip.
  • the ultra-wideband communication low noise amplifier 200 of the second embodiment is another specific circuit structure of the different technology of the ultra-wideband communication low noise amplifier 100 of the first embodiment.
  • FIG. 5 is a circuit structure diagram of an ultra-wideband communication low noise amplifier 200 according to Embodiment 2 of the present invention.
  • Embodiment 2 is basically the same as Embodiment 1, and the difference between Embodiment 2 and Embodiment 1 is that the UWB communication low noise amplifier 200 is realized by BJT transistor technology.
  • the UWB communication low noise amplifier 100 includes a first amplifying stage circuit 4 , a second amplifying stage circuit 5 and an output follower stage circuit 6 connected in sequence.
  • the first amplifying stage circuit 4 is used to receive an externally input radio frequency signal to realize broadband input matching of common base input impedance and emitter impedance.
  • the first amplifying stage circuit 4 includes a fifth capacitor C5, a sixth capacitor C6, a fifth transistor Q1, a third inductor L3 and a fourth resistor R4.
  • the circuit structure of the first amplifying stage circuit 4 is:
  • the first terminal of the fifth capacitor C5 is used as the input terminal RFIN of the ultra-wideband communication low noise amplifier 200.
  • the second terminal of the fifth capacitor C5 is respectively connected to the first terminal of the third inductor L3 and the emitter of the fifth transistor Q1, and the second terminal of the third inductor L3 is connected to the ground GND.
  • the base of the fifth transistor Q1 is connected to the fourth bias voltage VBE1, and the collector of the fifth transistor Q1 is respectively connected to the second end of the fourth resistor R4 and the first end of the sixth capacitor C6. Terminal, the first terminal of the fourth resistor R4 is connected to the power supply voltage VCC.
  • the second end of the sixth capacitor C6 is connected to the input end of the second amplifying stage circuit 5 .
  • the operating principle of the first amplification stage circuit 4 is:
  • the first amplifying stage circuit 4 passes through the fifth capacitor C5, the sixth capacitor C6, the fifth transistor Q1, the third inductor L3 and the fourth resistor R4. Together they form a common base amplifier circuit.
  • the fifth transistor Q1 is the first-stage amplifier transistor
  • the fifth capacitor C5 is the input DC blocking capacitor
  • the fourth resistor R4 is the load resistor of the first amplifier circuit 1
  • the sixth capacitor C6 is the first
  • the DC blocking capacitance of the amplifier stage circuit 4 and the second amplifier stage circuit 5 the third inductance L3 and the parasitic capacitance of the transistor of the fifth transistor Q1 resonate in the working frequency band
  • the input impedance is the emitter intrinsic characteristic of the fifth transistor Q1 Input impedance
  • the circuit structure realizes broadband input power matching and preliminary amplification of radio frequency signals.
  • the input terminal RFIN of the ultra-wideband communication low-noise amplifier 200 inputs a radio frequency signal through the fifth capacitor C5 as a DC blocking capacitor and loads it to the base of the fifth transistor Q1, and the generated small signal current is converted through the fourth resistor R4 as a load It is a small signal voltage, coupled to the input terminal of the second amplifying stage circuit 5 through the sixth capacitor C6 as a direct capacitor between stages.
  • the fifth capacitor C5 and the sixth capacitor C6 are parameter-adjustable capacitors
  • the third inductor L3 is a parameter-adjustable inductor
  • the fourth resistor R4 is a parameter-adjustable resistor
  • the parameters of the above-mentioned components are all adjustable, so as to adjust the working frequency of the first amplifying stage circuit 4 to be 3.1 GHz.
  • the operating frequency point of the first amplifying stage circuit 4 is adjusted to a low frequency (near 3.1 GHz).
  • the second amplification stage circuit 5 is used for signal amplification.
  • the second amplifying stage circuit 5 includes a fifth resistor R5, a sixth resistor R6, a fourth inductor L4, a seventh capacitor C7, and a sixth transistor Q2.
  • the circuit structure of the second amplifying stage circuit 5 is:
  • the base of the sixth transistor Q2 is used as the input end of the second amplifying stage circuit 5, and the base of the sixth transistor Q2 is respectively connected to the second end of the sixth capacitor C6 and the sixth
  • the second terminal of the resistor R6 and the first terminal of the sixth resistor R6 are connected to the fifth bias voltage VBE2.
  • the emitter of the sixth transistor Q2 is connected to the ground GND, and the collector of the sixth transistor Q2 is respectively connected to the input terminal of the output follower circuit 6, the second terminal of the fourth inductor L4, the The second terminal of the fifth resistor R5 and the second terminal of the seventh capacitor C7.
  • the first terminal of the fourth inductor L4, the first terminal of the fifth resistor R5 and the first terminal of the seventh capacitor C7 are all connected to the power supply voltage VCC.
  • both the fifth transistor Q1 and the sixth transistor Q2 are BJT transistors.
  • the operating principle of the second amplifying stage circuit 5 is:
  • the second amplifying stage circuit 2 forms a common base amplifying stage circuit through the fifth resistor R5, the sixth resistor R6, the fourth inductor L4, the seventh capacitor C7 and the sixth transistor Q2.
  • the sixth transistor Q2 is a common source amplifier tube
  • the fourth inductor L4 is a load inductor
  • the seventh capacitor C7 is a load capacitor
  • the fifth resistor R5 is a load resistor
  • the sixth resistor R6 is a bias resistor.
  • the fifth bias voltage VBE2 provides a bias voltage for the sixth transistor Q2 through the sixth resistor R6.
  • the fourth inductance L4 is a choke inductance, resonates with the seventh capacitor C7, and acts as a load of the second amplifying stage circuit 5 together with the fifth resistor R5.
  • the fifth resistor R5 and the sixth resistor R6 are parameter-adjustable resistors
  • the fourth inductor L4 is a parameter-adjustable inductor
  • the seventh capacitor C7 is a parameter-adjustable capacitor
  • the parameters of the above components are adjustable, so as to adjust the operating frequency of the second amplifier circuit 5 to be 10.6 GHz.
  • the operating frequency of the second amplifying stage circuit 5 is adjusted at high frequency (10.6 GHz).
  • the second amplifying stage circuit 5 realizes further amplification of the radio frequency signal.
  • the output follower circuit 6 is used to realize broadband output matching.
  • the output follower circuit 6 includes a seventh transistor Q3, a second current source Idc2 and an eighth capacitor C8.
  • the circuit structure of the output following stage circuit 6 is:
  • the base of the seventh transistor Q3 is used as the input terminal of the output follower circuit 6 , and the collector of the seventh transistor Q3 is connected to the power supply voltage VCC.
  • the emitter of the seventh transistor Q3 is respectively connected to the positive terminal of the second current source Idc2 and the first terminal of the eighth capacitor C8, and the negative terminal of the second current source Idc2 is connected to the ground GND.
  • the second terminal of the eighth capacitor C8 is used as the output terminal of the output follower circuit 6 . That is to say, the second terminal of the eighth capacitor C8 serves as the output terminal RFOUT of the ultra-wideband communication low noise amplifier 200 at the same time.
  • the seventh transistor Q3 is a BJT transistor.
  • the output follower stage circuit 6 adopts emitter follower configuration transistors, and realizes wideband matching of output impedance and load impedance through proper selection of the size of the seventh transistor Q3 and the bias current of the second current source Idc2.
  • the seventh transistor Q3 is biased by the second current source Idc2 to realize the impedance matching of the external 50 ohm load connected to the output terminal RFOUT of the UWB communication low noise amplifier 200 .
  • the first-stage amplifying circuit 4 of the ultra-broadband communication low-noise amplifier 200 resonates at a low frequency band
  • the second-stage amplifying circuit 5 resonates at a high-frequency point, so that the first-stage amplifying circuit 4 resonates at a high frequency.
  • Gain reduction has been compensated by the gain compensation at the high frequency of the second-stage amplifier circuit 5, and the two-stage balanced amplification has realized the extension of the bandwidth, so that the working frequency bandwidth of the ultra-wideband communication low-noise amplifier of the present invention is high and the performance index is high .
  • the ultra-wideband communication low noise amplifier 200 meets the performance index requirements of the ultra-wideband communication standard: the first point, wideband matching, to meet the return loss as small as possible in the entire frequency band.
  • the second point is a large enough gain to amplify the received weak RF signal.
  • the third point, low noise can improve the sensitivity of the whole system.
  • the fourth point, low power consumption improves the service life of the battery of the whole machine.
  • Fifth point the circuit layout area is as small as possible to save the production cost of the corresponding chip.
  • resistors, capacitors, inductors, current sources, and transistors used in the present invention are all commonly used components in the field, with indicators and parameters that can be adjusted according to actual applications, and will not be described in detail here.
  • the utility model also provides a radio frequency chip, and the radio frequency chip includes the ultra-wideband communication low noise amplifier 100 . Because the radio frequency chip adopts the ultra-wideband communication low-noise amplifier 100, it can work in a wide frequency band and has high performance indicators.
  • the utility model also provides another radio frequency chip.
  • the radio frequency chip includes the UWB communication low noise amplifier 200 . Because the radio frequency chip adopts the ultra-wideband communication low-noise amplifier 200, it can work with a wide frequency band and high performance index.
  • the ultra-wideband communication low-noise amplifier and the radio frequency chip of the utility model are provided with a first amplifying stage circuit, a second amplifying stage circuit and an output follower stage circuit which are sequentially connected.
  • the first amplifying stage circuit forms a common gate amplifying stage circuit through the first capacitor, the second capacitor, the first transistor, the first inductor and the first resistor, and the working frequency of the circuit is adjusted to a low frequency (near 3.1 GHz).
  • the second amplifying stage circuit constitutes a cascode amplifying stage circuit through the second resistor, the third resistor, the second inductance, the third capacitor, the second transistor and the third transistor, and the operating frequency of the circuit is adjusted at a high frequency (10.6 GHz).
  • the above-mentioned circuit structure in which the first-stage amplifying circuit resonates at the low frequency band and the second-stage amplifying circuit resonates at the high-frequency point makes the gain reduction of the first-stage amplifying circuit at high frequencies obtain the high frequency of the second-stage amplifying circuit.
  • Gain compensation at the high frequency, two-stage balanced amplification realizes the extension of the bandwidth, meets the performance index requirements of the ultra-wideband communication standard, so that the operating frequency bandwidth and performance index of the ultra-wideband communication low noise amplifier and the chip of the utility model high.

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Abstract

Provided in the present utility model is an ultra-wideband communication low-noise amplifier, comprising a first amplification stage circuit, a second amplification stage circuit and an output follower stage circuit, which are connected in sequence, wherein the first amplification stage circuit is used for receiving an externally input radio frequency signal to realize wideband input matching of a common gate input impedance and a source impedance; the second amplification stage circuit is used for signal amplification; the output follower stage circuit is used for realizing wideband output matching; the first amplification stage circuit comprises a first capacitor, a second capacitor, a first transistor, a first inductor and a first resistor; and the second amplification stage circuit comprises a second resistor, a third resistor, a second inductor, a third capacitor, a second transistor and a third transistor. Further provided in the present utility model are another ultra-wideband communication low-noise amplifier and a radio frequency chip. By using the ultra-wideband communication low-noise amplifier and the radio frequency chip in the present utility model, the working frequency band thereof is wide and the performance index thereof is high.

Description

超宽带通信标准的低噪声放大器和射频芯片Low Noise Amplifiers and RF Chips for UWB Communication Standards 技术领域technical field
本实用新型涉及放大器电路领域，尤其涉及一种超宽带通信低噪声放大器和射频芯片。The utility model relates to the field of amplifier circuits, in particular to an ultra-wideband communication low-noise amplifier and a radio frequency chip.
背景技术Background technique
目前，通信技术的发展，低噪声放大器(Low Noise Amplifier，简称LNA)在通信***中承担了越来越重要的角色，低噪声放大器是通信***中的射频前端非常重要的模组，其作用为处理天线接收的信号，减弱通信模块的噪声。低噪声放大器的性能直接决定通信***中的接收机的灵敏度进而信号频谱模板等，从而影响和决定整个通信***的各项性能指标。随着超宽带通信(Ultra Wide Band，简称UWB)标准的应用，UWB低噪声放大器的工作带宽进一步拓展，需要覆盖3.1GHz至10.6GHz宽带频段。超宽的工作频带，使得UWB低噪声放大器解决了面向短距视频数据传输等高速连接的问题，其中，提供更高的传输速率，非常适合高性能应用。At present, with the development of communication technology, the low noise amplifier (Low Noise Amplifier, referred to as LNA) has assumed an increasingly important role in the communication system. The low noise amplifier is a very important module of the RF front end in the communication system. Its role is Process the signal received by the antenna and reduce the noise of the communication module. The performance of the low noise amplifier directly determines the sensitivity of the receiver in the communication system and then the signal spectrum template, etc., thereby affecting and determining various performance indicators of the entire communication system. With the application of the Ultra Wide Band (UWB) standard, the working bandwidth of the UWB low noise amplifier is further expanded, and it needs to cover the broadband frequency band from 3.1GHz to 10.6GHz. The ultra-wide operating frequency band enables the UWB low-noise amplifier to solve the problem of high-speed connections such as short-distance video data transmission. Among them, it provides a higher transmission rate and is very suitable for high-performance applications.
然而，UWB低噪声放大器在更宽的工作带宽情况下的性能指标受到电路的限制。其中，UWB低噪声放大器需要满足以下必要条件：第一点、宽带匹配，以满足整个频带内尽量小的回波损耗。第二点、足够大的增益，用来放大接收到的微弱射频信号。第三点、低噪声，可以提高整个***的灵敏度。第四点、低功耗，提高整机电池使用寿命。第五点、电路版图面积尽可能小，以节约对应的芯片的生产成本。However, the performance index of the UWB low-noise amplifier is limited by the circuit in the case of a wider operating bandwidth. Among them, the UWB low-noise amplifier needs to meet the following necessary conditions: the first point, broadband matching, to meet the return loss as small as possible in the entire frequency band. The second point is a large enough gain to amplify the received weak RF signal. The third point, low noise, can improve the sensitivity of the whole system. The fourth point, low power consumption, improves the service life of the battery of the whole machine. Fifth point, the circuit layout area is as small as possible to save the production cost of the corresponding chip.
因此，实有必要提供一种新的低噪声放大器和芯片解决上述问题。Therefore, it is necessary to provide a new low noise amplifier and chip to solve the above problems.
实用新型内容Utility model content
针对以上现有技术的不足，本实用新型提出一种工作频带宽且 性能指标高的超宽带通信低噪声放大器和射频芯片。Aiming at the above deficiencies in the prior art, the utility model proposes an ultra-wideband communication low noise amplifier and radio frequency chip with a wide operating frequency and high performance index.
为了解决上述技术问题，一方面，本实用新型实施例提供了一种超宽带通信低噪声放大器，该低噪声放大器包括依次连接的第一放大级电路、第二放大级电路和输出跟随级电路；In order to solve the above technical problems, on the one hand, an embodiment of the present invention provides an ultra-wideband communication low-noise amplifier, the low-noise amplifier includes a first amplification stage circuit, a second amplification stage circuit and an output follower stage circuit connected in sequence;
所述第一放大级电路用于接收外部输入的射频信号实现共栅极输入阻抗和源极阻抗的宽带输入匹配；The first amplifying stage circuit is used to receive an externally input radio frequency signal to realize broadband input matching of common gate input impedance and source impedance;
所述第二放大级电路用于信号放大；The second amplification stage circuit is used for signal amplification;
所述输出跟随级电路用于实现宽带输出匹配；The output following stage circuit is used to realize broadband output matching;
所述第一放大级电路包括第一电容、第二电容、第一晶体管、第一电感以及第一电阻；The first amplifying stage circuit includes a first capacitor, a second capacitor, a first transistor, a first inductor and a first resistor;
所述第一电容的第一端作为所述超宽带通信低噪声放大器的输入端；The first end of the first capacitor is used as the input end of the ultra-wideband communication low noise amplifier;
所述第一电容的第二端分别连接至所述第一电感的第一端和所述第一晶体管的源极，所述第一电感的第二端连接至接地；The second end of the first capacitor is respectively connected to the first end of the first inductor and the source of the first transistor, and the second end of the first inductor is connected to ground;
所述第一晶体管的栅极连接至第一偏置电压，所述第一晶体管的漏极分别连接至所述第一电阻的第二端和所述第二电容的第一端，所述第一电阻的第一端连接至电源电压；The gate of the first transistor is connected to a first bias voltage, the drain of the first transistor is respectively connected to the second end of the first resistor and the first end of the second capacitor, and the first The first end of a resistor is connected to the power supply voltage;
所述第二电容的第二端连接至所述第二放大级电路的输入端；The second end of the second capacitor is connected to the input end of the second amplifying stage circuit;
所述第二放大级电路包括第二电阻、第三电阻、第二电感、第三电容、第二晶体管及第三晶体管；The second amplifying stage circuit includes a second resistor, a third resistor, a second inductor, a third capacitor, a second transistor, and a third transistor;
所述第二晶体管的栅极作为所述第二放大级电路的输入端，且所述第二晶体管的栅极分别连接至所述第二电容的第二端和所述第三电阻的第二端，所述第三电阻的第一端连接至第三偏置电压；The gate of the second transistor is used as the input terminal of the second amplifying stage circuit, and the gate of the second transistor is respectively connected to the second terminal of the second capacitor and the second terminal of the third resistor. end, the first end of the third resistor is connected to a third bias voltage;
所述第二晶体管的源极连接至接地，所述第二晶体管的漏极连接至所述第三晶体管的源极；The source of the second transistor is connected to ground, and the drain of the second transistor is connected to the source of the third transistor;
所述第三晶体管的栅极连接至第二偏置电压，所述第三晶体管的漏极分别连接至所述输出跟随级电路的输入端、所述第二电感的第二端、所述第二电阻的第二端及所述第三电容的第二端；The gate of the third transistor is connected to the second bias voltage, and the drain of the third transistor is respectively connected to the input end of the output follower circuit, the second end of the second inductor, the first the second end of the second resistor and the second end of the third capacitor;
所述第二电感的第一端、所述第二电阻的第一端及所述第三电容的第一端均连接至电源电压；The first end of the second inductor, the first end of the second resistor, and the first end of the third capacitor are all connected to a power supply voltage;
其中，所述第一晶体管、所述第二晶体管以及所述第三晶体管均为MOS晶体管。Wherein, the first transistor, the second transistor and the third transistor are all MOS transistors.
优选的，所述输出跟随级电路包括第四晶体管、第一电流源及第四电容；Preferably, the output follower circuit includes a fourth transistor, a first current source and a fourth capacitor;
所述第四晶体管的栅极作为所述输出跟随级电路的输入端，所述第四晶体管的漏极连接至电源电压；The gate of the fourth transistor is used as the input terminal of the output follower circuit, and the drain of the fourth transistor is connected to a power supply voltage;
所述第四晶体管的源极分别连接至所述第一电流源的正极端和所述第四电容的第一端，所述第一电流源的负极端连接至接地；The source of the fourth transistor is respectively connected to the positive terminal of the first current source and the first terminal of the fourth capacitor, and the negative terminal of the first current source is connected to ground;
所述第四电容的第二端作为所述输出跟随级电路的输出端；The second terminal of the fourth capacitor serves as the output terminal of the output follower circuit;
其中，所述第四晶体管为MOS晶体管。Wherein, the fourth transistor is a MOS transistor.
优选的，所述第一电容和所述第二电容均为参数可调电容，所述第一电感为参数可调电感，以及所述第一电阻为参数可调电阻，以调整所述第一放大级电路的工作频点为3.1GHz。Preferably, both the first capacitor and the second capacitor are parameter-adjustable capacitors, the first inductance is a parameter-adjustable inductor, and the first resistor is a parameter-adjustable resistor, so as to adjust the first The operating frequency of the amplifier circuit is 3.1GHz.
优选的，所述第二电阻和所述第三电阻均为参数可调电阻，所述第二电感为参数可调电感，以及所述第三电容为参数可调电容，以调整所述第二放大级电路的工作频点为10.6GHz。Preferably, both the second resistor and the third resistor are parameter-adjustable resistors, the second inductance is a parameter-adjustable inductor, and the third capacitor is a parameter-adjustable capacitor, so as to adjust the second The operating frequency of the amplifier circuit is 10.6GHz.
第二方面，本实用新型实施例还提供了一种射频芯片，包括如上中任意一项所述的超宽带通信低噪声放大器。In the second aspect, the embodiment of the present utility model also provides a radio frequency chip, including the ultra-wideband communication low noise amplifier described in any one of the above.
第三方面，本实用新型实施例还提供了一种超宽带通信低噪声放大器，该低噪声放大器包括依次连接的第一放大级电路、第二放大级电路和输出跟随级电路；In the third aspect, the embodiment of the present utility model also provides a low-noise amplifier for ultra-wideband communication, the low-noise amplifier includes a first amplification stage circuit, a second amplification stage circuit, and an output follower stage circuit connected in sequence;
所述第一放大级电路用于接收外部输入的射频信号实现共基极输入阻抗和发射极阻抗的宽带输入匹配；The first amplifying stage circuit is used to receive an externally input radio frequency signal to realize broadband input matching of common base input impedance and emitter impedance;
所述第二放大级电路用于信号放大；The second amplification stage circuit is used for signal amplification;
所述输出跟随级电路用于实现宽带输出匹配；The output following stage circuit is used to realize broadband output matching;
所述第一放大级电路包括第五电容、第六电容、第五晶体管、第三电感以及第四电阻；The first amplifying stage circuit includes a fifth capacitor, a sixth capacitor, a fifth transistor, a third inductor and a fourth resistor;
所述第五电容的第一端作为所述超宽带通信低噪声放大器的输入端；The first end of the fifth capacitor is used as the input end of the ultra-wideband communication low noise amplifier;
所述第五电容的第二端分别连接至所述第三电感的第一端和 所述第五晶体管的发射极，所述第三电感的第二端连接至接地；The second end of the fifth capacitor is respectively connected to the first end of the third inductor and the emitter of the fifth transistor, and the second end of the third inductor is connected to ground;
所述第五晶体管的基极连接至第四偏置电压，所述第五晶体管的集电极分别连接至所述第四电阻的第二端和所述第六电容的第一端，所述第四电阻的第一端连接至电源电压；The base of the fifth transistor is connected to the fourth bias voltage, the collector of the fifth transistor is respectively connected to the second end of the fourth resistor and the first end of the sixth capacitor, the first The first ends of the four resistors are connected to the power supply voltage;
所述第六电容的第二端连接至所述第二放大级电路的输入端；The second end of the sixth capacitor is connected to the input end of the second amplifying stage circuit;
所述第二放大级电路包括第五电阻、第六电阻、第四电感、第七电容以及第六晶体管；The second amplifying stage circuit includes a fifth resistor, a sixth resistor, a fourth inductor, a seventh capacitor and a sixth transistor;
所述第六晶体管的基极作为所述第二放大级电路的输入端，且所述第六晶体管的基极分别连接至所述第六电容的第二端和所述第六电阻的第二端，所述第六电阻的第一端连接至第五偏置电压；The base of the sixth transistor is used as the input end of the second amplifying stage circuit, and the base of the sixth transistor is respectively connected to the second end of the sixth capacitor and the second end of the sixth resistor. terminal, the first terminal of the sixth resistor is connected to the fifth bias voltage;
所述第六晶体管的发射极连接至接地，所述第六晶体管的集电极分别连接至所述输出跟随级电路的输入端、所述第四电感的第二端、所述第五电阻的第二端及所述第七电容的第二端；The emitter of the sixth transistor is connected to ground, and the collector of the sixth transistor is respectively connected to the input terminal of the output follower circuit, the second terminal of the fourth inductor, and the first terminal of the fifth resistor. two terminals and the second terminal of the seventh capacitor;
所述第四电感的第一端、所述第五电阻的第一端及所述第七电容的第一端均连接至电源电压；The first end of the fourth inductor, the first end of the fifth resistor, and the first end of the seventh capacitor are all connected to a power supply voltage;
其中，所述第五晶体管和所述第六晶体管均为BJT晶体管。Wherein, both the fifth transistor and the sixth transistor are BJT transistors.
优选的，所述输出跟随级电路包括第七晶体管、第二电流源及第八电容；Preferably, the output follower circuit includes a seventh transistor, a second current source and an eighth capacitor;
所述第七晶体管的基极作为所述输出跟随级电路的输入端，所述第七晶体管的集电极连接至电源电压；The base of the seventh transistor is used as the input terminal of the output follower circuit, and the collector of the seventh transistor is connected to a power supply voltage;
所述第七晶体管的发射极分别连接至所述第二电流源的正极端和所述第八电容的第一端，所述第二电流源的负极端连接至接地；The emitter of the seventh transistor is respectively connected to the positive terminal of the second current source and the first terminal of the eighth capacitor, and the negative terminal of the second current source is connected to ground;
所述第八电容的第二端作为所述输出跟随级电路的输出端；The second terminal of the eighth capacitor is used as the output terminal of the output follower circuit;
其中，所述第七晶体管均为BJT晶体管。Wherein, the seventh transistors are all BJT transistors.
优选的，所述第五电容和所述第六电容均为参数可调电容，所述第三电感为参数可调电感，以及所述第四电阻为参数可调电阻，以调整所述第一放大级电路的工作频点为3.1GHz。Preferably, both the fifth capacitor and the sixth capacitor are parameter-adjustable capacitors, the third inductor is a parameter-adjustable inductor, and the fourth resistor is a parameter-adjustable resistor, so as to adjust the first The operating frequency of the amplifier circuit is 3.1GHz.
优选的，所述第五电阻和所述第六电阻均为参数可调电阻，所述第四电感为参数可调电感，以及所述第七电容为参数可调电容， 以调整所述第二放大级电路的工作频点为10.6GHz。Preferably, both the fifth resistor and the sixth resistor are parameter-adjustable resistors, the fourth inductance is a parameter-adjustable inductor, and the seventh capacitor is a parameter-adjustable capacitor, so as to adjust the second The operating frequency of the amplifier circuit is 10.6GHz.
第四方面，本实用新型实施例还提供了一种射频芯片，所述芯片包括如上第三方面中任意一项所述的超宽带通信低噪声放大器。In the fourth aspect, the embodiment of the present utility model further provides a radio frequency chip, the chip includes the ultra-wideband communication low-noise amplifier described in any one of the above third aspects.
与相关技术相比，本实用新型的超宽带通信低噪声放大器和射频芯片通过设置依次连接的第一放大级电路、第二放大级电路和输出跟随级电路。其中，第一放大级电路通过第一电容、第二电容、第一晶体管、第一电感以及第一电阻共同构成共栅放大级电路，该电路工作频点调整在低频(3.1GHz附近)。第二放大级电路通过第二电阻、第三电阻、第二电感、第三电容、第二晶体管及第三晶体管共同构成共源共栅放大级电路，该电路工作频点调整在高频(10.6GHz)。上述通过这种第一级放大电路谐振在低频段，第二级放大电路谐振在高频点的电路结构，使得第一级放大电路在高频处的增益下降得到了第二级放大电路的高频处的增益补偿，两级均衡放大，实现了带宽的延拓，满足了超宽带通信标准的性能指标要求，从而使得本实用新型的超宽带通信低噪声放大器和芯片的工作频带宽且性能指标高。Compared with the related technology, the ultra-wideband communication low-noise amplifier and the radio frequency chip of the utility model are provided with a first amplifying stage circuit, a second amplifying stage circuit and an output follower stage circuit which are sequentially connected. Wherein, the first amplifying stage circuit forms a common gate amplifying stage circuit through the first capacitor, the second capacitor, the first transistor, the first inductor and the first resistor, and the working frequency of the circuit is adjusted to a low frequency (near 3.1 GHz). The second amplifying stage circuit constitutes a cascode amplifying stage circuit through the second resistor, the third resistor, the second inductance, the third capacitor, the second transistor and the third transistor, and the operating frequency of the circuit is adjusted at a high frequency (10.6 GHz). The above-mentioned circuit structure in which the first-stage amplifying circuit resonates at the low frequency band and the second-stage amplifying circuit resonates at the high-frequency point makes the gain reduction of the first-stage amplifying circuit at high frequencies obtain the high frequency of the second-stage amplifying circuit. Gain compensation at the high frequency, two-stage balanced amplification, realizes the extension of the bandwidth, meets the performance index requirements of the ultra-wideband communication standard, so that the operating frequency bandwidth and performance index of the ultra-wideband communication low noise amplifier and the chip of the utility model high.
附图说明Description of drawings
下面结合附图详细说明本实用新型。通过结合以下附图所作的详细描述，本实用新型的上述或其他方面的内容将变得更清楚和更容易理解。附图中,Below in conjunction with accompanying drawing, describe the utility model in detail. Through the detailed description in conjunction with the following drawings, the content of the above or other aspects of the present invention will become clearer and easier to understand. In the attached picture,
图1为本实用新型实施例一超宽带通信低噪声放大器的电路结构图；Fig. 1 is a circuit structure diagram of an ultra-wideband communication low noise amplifier of the utility model embodiment;
图2为本实用新型实施例一超宽带通信低噪声放大器的第一放大级电路增益频率曲线示意图；Fig. 2 is a schematic diagram of the gain-frequency curve of the first amplification stage circuit of an ultra-wideband communication low-noise amplifier according to an embodiment of the present invention;
图3为本实用新型实施例一超宽带通信低噪声放大器的第二放大级电路增益频率曲线示意图；Fig. 3 is a schematic diagram of the gain-frequency curve of the second amplification stage circuit of an ultra-wideband communication low-noise amplifier according to an embodiment of the present invention;
图4为本实用新型实施例一超宽带通信低噪声放大器的增益频率曲线示意图；4 is a schematic diagram of a gain-frequency curve of an ultra-wideband communication low-noise amplifier according to an embodiment of the present invention;
图5为本实用新型实施例二超宽带通信低噪声放大器的电路 结构图。Fig. 5 is a circuit structure diagram of an ultra-wideband communication low-noise amplifier in Embodiment 2 of the present invention.
具体实施方式Detailed ways
下面结合附图详细说明本实用新型的具体实施方式。The specific embodiment of the utility model will be described in detail below in conjunction with the accompanying drawings.
在此记载的具体实施方式/实施例为本实用新型的特定的具体实施方式，用于说明本实用新型的构思，均是解释性和示例性的，不应解释为对本实用新型实施方式及本实用新型范围的限制。除在此记载的实施例外，本领域技术人员还能够基于本申请权利要求书和说明书所公开的内容采用显而易见的其它技术方案，这些技术方案包括采用对在此记载的实施例的做出任何显而易见的替换和修改的技术方案，都在本实用新型的保护范围之内。The specific implementations/embodiments described here are specific specific implementations of the present utility model, and are used to illustrate the concept of the present utility model. Limitations on the scope of utility models. In addition to the embodiments described here, those skilled in the art can also adopt other obvious technical solutions based on the claims of the application and the contents disclosed in the description, and these technical solutions include adopting any obvious changes made to the embodiments described here. The replacement and modified technical solutions are all within the protection scope of the present utility model.
(实施例一)(Embodiment 1)
本实用新型实施例提供一种超宽带通信低噪声放大器100，用于超宽带通信标准的通信***。The embodiment of the utility model provides an ultra-wideband communication low noise amplifier 100, which is used in a communication system of the ultra-wideband communication standard.
请同时参考图1-4所示，其中，图1为本实用新型实施例一超宽带通信低噪声放大器100的电路结构图。Please refer to FIGS. 1-4 at the same time, wherein FIG. 1 is a circuit structure diagram of an ultra-wideband communication low noise amplifier 100 according to an embodiment of the present invention.
所述超宽带通信低噪声放大器100应用于3.1GHz-10.6GHz工作频带的通信产品。The ultra-wideband communication low noise amplifier 100 is applied to communication products in the 3.1GHz-10.6GHz operating frequency band.
本实施例一的所述超宽带通信低噪声放大器100采用MOS晶体管工艺实现。The ultra-wideband communication low noise amplifier 100 in the first embodiment is realized by using MOS transistor technology.
所述超宽带通信低噪声放大器100包括依次连接的第一放大级电路1、第二放大级电路2和输出跟随级电路3。The UWB communication low noise amplifier 100 includes a first amplifying stage circuit 1 , a second amplifying stage circuit 2 and an output follower stage circuit 3 connected in sequence.
所述第一放大级电路1用于接收外部输入的射频信号实现共栅极输入阻抗和源极阻抗的宽带输入匹配。The first amplifying stage circuit 1 is used to receive an externally input radio frequency signal to realize broadband input matching of common gate input impedance and source impedance.
具体的，所述第一放大级电路1包括第一电容C1、第二电容C2、第一晶体管M1、第一电感L1以及第一电阻R1。Specifically, the first amplifying stage circuit 1 includes a first capacitor C1, a second capacitor C2, a first transistor M1, a first inductor L1 and a first resistor R1.
所述第一放大级电路1的电路结构为：The circuit structure of the first amplifying stage circuit 1 is:
所述第一电容C1的第一端作为所述超宽带通信低噪声放大器100的输入端RFIN。The first terminal of the first capacitor C1 serves as the input terminal RFIN of the ultra-wideband communication low noise amplifier 100 .
所述第一电容C1的第二端分别连接至所述第一电感L1的第 一端和所述第一晶体管M1的源极，所述第一电感L1的第二端连接至接地GND。The second end of the first capacitor C1 is respectively connected to the first end of the first inductor L1 and the source of the first transistor M1, and the second end of the first inductor L1 is connected to the ground GND.
所述第一晶体管M1的栅极连接至第一偏置电压VG1，所述第一晶体管M1的漏极分别连接至所述第一电阻R1的第二端和所述第二电容C2的第一端，所述第一电阻R1的第一端连接至电源电压VDD。The gate of the first transistor M1 is connected to the first bias voltage VG1, and the drain of the first transistor M1 is respectively connected to the second terminal of the first resistor R1 and the first terminal of the second capacitor C2. terminal, and the first terminal of the first resistor R1 is connected to the power supply voltage VDD.
所述第二电容C2的第二端连接至所述第二放大级电路2的输入端。The second end of the second capacitor C2 is connected to the input end of the second amplifying stage circuit 2 .
其中，所述第一晶体管M1为MOS晶体管。Wherein, the first transistor M1 is a MOS transistor.
所述第一放大级电路1的工作原理为:The operating principle of the first amplifier stage circuit 1 is:
所述第一放大级电路1通过第一电容C1、第二电容C2、第一晶体管M1、第一电感L1以及第一电阻R1共同构成共栅放大级电路。具体的，第一晶体管M1为第一级放大器晶体管，第一电容C1为输入隔直电容，第一电阻R1为所述第一放大级电路1的负载电阻，第二电容C2为所述第一放大级电路1和所述第二放大级电路2的隔直电容，第一电感L1和第一晶体管M1的晶体管的寄生电容谐振在工作频段，输入阻抗即为第一晶体管M1的源极本征输入阻抗，该电路结构实现了宽带的输入功率匹配和射频信号的初步放大。The first amplifier stage circuit 1 forms a common gate amplifier stage circuit through the first capacitor C1, the second capacitor C2, the first transistor M1, the first inductor L1 and the first resistor R1. Specifically, the first transistor M1 is a first-stage amplifier transistor, the first capacitor C1 is an input DC blocking capacitor, the first resistor R1 is a load resistor of the first amplifier circuit 1, and the second capacitor C2 is the first The DC blocking capacitance of the amplifier stage circuit 1 and the second amplifier stage circuit 2, the parasitic capacitance of the first inductor L1 and the transistor of the first transistor M1 resonate in the working frequency band, and the input impedance is the source intrinsic characteristic of the first transistor M1 Input impedance, the circuit structure realizes broadband input power matching and preliminary amplification of radio frequency signals.
所述超宽带通信低噪声放大器100的输入端RFIN输入射频信号通过作为隔直电容的第一电容C1加载到第一晶体管M1的源极，产生的小信号电流通过作为负载的第一电阻R1转变为小信号电压，通过作为级间隔直电容的第二电容C2耦合到所述第二放大级电路2的输入端。The input terminal RFIN of the ultra-wideband communication low noise amplifier 100 inputs a radio frequency signal through the first capacitor C1 as a DC blocking capacitor and loads it to the source of the first transistor M1, and the generated small signal current is transformed through the first resistor R1 as a load is a small signal voltage, coupled to the input terminal of the second amplifying stage circuit 2 through the second capacitor C2 as a direct capacitor between stages.
请参考图2所示，图2为本实用新型实施例一超宽带通信低噪声放大器的第一放大级电路增益频率曲线示意图。本实施例一中，所述第一电容C1和所述第二电容C2均为参数可调电容，所述第一电感L1为参数可调电感，以及所述第一电阻R1为参数可调电阻，上述元器件均为参数可调，以调整所述第一放大级电路1的工作频点为3.1GHz。所述第一放大级电路1设置工作频点调整在低 频(3.1GHz附近)。Please refer to FIG. 2 . FIG. 2 is a schematic diagram of a gain-frequency curve of a first amplification stage circuit of an ultra-wideband communication low noise amplifier according to an embodiment of the present invention. In the first embodiment, the first capacitor C1 and the second capacitor C2 are parameter-adjustable capacitors, the first inductor L1 is a parameter-adjustable inductor, and the first resistor R1 is a parameter-adjustable resistor , the parameters of the above-mentioned components are all adjustable, so as to adjust the working frequency of the first amplifying stage circuit 1 to 3.1 GHz. The operating frequency point of the first amplifying stage circuit 1 is set to be adjusted at a low frequency (near 3.1 GHz).
所述第二放大级电路2用于信号放大。The second amplification stage circuit 2 is used for signal amplification.
具体的，所述第二放大级电路2包括第二电阻R2、第三电阻R3、第二电感L2、第三电容C3、第二晶体管M2及第三晶体管M3。Specifically, the second amplifying stage circuit 2 includes a second resistor R2, a third resistor R3, a second inductor L2, a third capacitor C3, a second transistor M2, and a third transistor M3.
所述第二放大级电路2的电路结构为：The circuit structure of the second amplifying stage circuit 2 is:
所述第二晶体管M2的栅极作为所述第二放大级电路2的输入端，且所述第二晶体管M2的栅极分别连接至所述第二电容C2的第二端和所述第三电阻R3的第二端，所述第三电阻R3的第一端连接至第三偏置电压VGS2。The gate of the second transistor M2 is used as the input terminal of the second amplifying stage circuit 2, and the gate of the second transistor M2 is respectively connected to the second terminal of the second capacitor C2 and the third The second terminal of the resistor R3, the first terminal of the third resistor R3 is connected to the third bias voltage VGS2.
所述第二晶体管M2的源极连接至接地GND，所述第二晶体管M2的漏极连接至所述第三晶体管M3的源极。The source of the second transistor M2 is connected to the ground GND, and the drain of the second transistor M2 is connected to the source of the third transistor M3.
所述第三晶体管M3的栅极连接至第二偏置电压VG2，所述第三晶体管M3的漏极分别连接至所述输出跟随级电路3的输入端、所述第二电感L2的第二端、所述第二电阻R2的第二端及所述第三电容C3的第二端。The gate of the third transistor M3 is connected to the second bias voltage VG2, and the drain of the third transistor M3 is connected to the input terminal of the output follower circuit 3 and the second terminal of the second inductor L2 respectively. end, the second end of the second resistor R2 and the second end of the third capacitor C3.
所述第二电感L2的第一端、所述第二电阻R2的第一端及所述第三电容C3的第一端均连接至电源电压VDD。The first terminal of the second inductor L2, the first terminal of the second resistor R2 and the first terminal of the third capacitor C3 are all connected to the power supply voltage VDD.
其中，所述第二晶体管M2以及所述第三晶体管M3均为MOS晶体管。Wherein, both the second transistor M2 and the third transistor M3 are MOS transistors.
所述第二放大级电路2的工作原理为:The operating principle of the second amplifier stage circuit 2 is:
所述第二放大级电路2通过第二电阻R2、第三电阻R3、第二电感L2、第三电容C3、第二晶体管M2及第三晶体管M3共同构成共源共栅放大级电路。具体的，第二晶体管M2为共源放大管，第三晶体管M3为共栅放大管，第二电感L2为负载电感，第三电容C3为负载电容，第二电阻R2为负载电阻，第三电阻R3为偏置电阻。The second amplifier stage circuit 2 forms a cascode amplifier stage circuit through the second resistor R2, the third resistor R3, the second inductor L2, the third capacitor C3, the second transistor M2 and the third transistor M3. Specifically, the second transistor M2 is a common-source amplifier tube, the third transistor M3 is a common-gate amplifier tube, the second inductance L2 is a load inductance, the third capacitor C3 is a load capacitor, the second resistor R2 is a load resistor, and the third resistor R3 is a bias resistor.
第三偏置电压VGS2通过第三电阻R3为第二晶体管M2提供偏置电压。第三晶体管M3可以起到增加隔离度以及耐压作用，第二电感L2为扼流电感，并和第三电容C3谐振，同第二电阻R2一 起作为所述第二放大级电路2的负载。The third bias voltage VGS2 provides a bias voltage for the second transistor M2 through the third resistor R3. The third transistor M3 can increase isolation and withstand voltage. The second inductance L2 is a choke inductance, and resonates with the third capacitor C3, and acts as a load of the second amplifying stage circuit 2 together with the second resistor R2.
请参考图3所示，图3为本实用新型实施例一超宽带通信低噪声放大器的第二放大级电路增益频率曲线示意图。本实施例一中，所述第二电阻R2和所述第三电阻R3均为参数可调电阻，所述第二电感为参数可调电感，以及所述第三电容C3为参数可调电容，上述元器件均为参数可调，以调整所述第二放大级电路2的工作频点为10.6GHz。所述第二放大级电路2工作频点调整在高频(10.6GHz)。所述第二放大级电路2实现了对射频信号的进一步放大。Please refer to FIG. 3 , which is a schematic diagram of a gain-frequency curve of a second amplification stage circuit of an ultra-wideband communication low noise amplifier according to an embodiment of the present invention. In the first embodiment, the second resistor R2 and the third resistor R3 are parameter-adjustable resistors, the second inductor is a parameter-adjustable inductor, and the third capacitor C3 is a parameter-adjustable capacitor, The parameters of the above-mentioned components are all adjustable, so as to adjust the operating frequency of the second amplifier stage circuit 2 to 10.6 GHz. The operating frequency point of the second amplifying stage circuit 2 is adjusted at a high frequency (10.6 GHz). The second amplification stage circuit 2 realizes further amplification of the radio frequency signal.
所述输出跟随级电路3用于实现宽带输出匹配。The output follower circuit 3 is used to realize broadband output matching.
具体的，所述输出跟随级电路3包括第四晶体管M4、第一电流源Idc1及第四电容C4。Specifically, the output follower circuit 3 includes a fourth transistor M4, a first current source Idc1 and a fourth capacitor C4.
所述输出跟随级电路3的电路结构为：The circuit structure of the output following stage circuit 3 is:
所述第四晶体管M4的栅极作为所述输出跟随级电路3的输入端，所述第四晶体管M4的漏极连接至电源电压VDD。The gate of the fourth transistor M4 is used as the input terminal of the output follower circuit 3 , and the drain of the fourth transistor M4 is connected to the power supply voltage VDD.
所述第四晶体管M4的源极分别连接至所述第一电流源Idc1的正极端和所述第四电容C4的第一端，所述第一电流源Idc1的负极端连接至接地GND。The source of the fourth transistor M4 is respectively connected to the positive terminal of the first current source Idc1 and the first terminal of the fourth capacitor C4, and the negative terminal of the first current source Idc1 is connected to the ground GND.
所述第四电容C4的第二端作为所述输出跟随级电路3的输出端。也就是说，所述第四电容C4的第二端同时作为所述超宽带通信低噪声放大器100的输出端RFOUT。The second terminal of the fourth capacitor C4 is used as the output terminal of the output follower circuit 3 . That is to say, the second terminal of the fourth capacitor C4 serves as the output terminal RFOUT of the ultra-wideband communication low noise amplifier 100 at the same time.
其中，所述第四晶体管M4为MOS晶体管。Wherein, the fourth transistor M4 is a MOS transistor.
所述输出跟随级电路3的工作原理为:The operating principle of the output following stage circuit 3 is:
所述输出跟随级电路3采用源极跟随组态晶体管，通过第四晶体管M4的尺寸和第一电流源Idc1的偏置电流的合适选取，实现输出阻抗和负载阻抗的宽带匹配。The output follower stage circuit 3 adopts source follower configuration transistors, and realizes broadband matching of output impedance and load impedance through proper selection of the size of the fourth transistor M4 and the bias current of the first current source Idc1.
第四晶体管M4通过第一电流源Idc1进行偏置，实现了和所述超宽带通信低噪声放大器100的输出端RFOUT连接的外部50欧姆负载阻抗的匹配。The fourth transistor M4 is biased by the first current source Idc1 to realize the impedance matching of the external 50 ohm load connected to the output terminal RFOUT of the UWB communication low noise amplifier 100 .
请参考图4所示，图4为本实用新型实施例一超宽带通信低噪 声放大器的增益频率曲线示意图。由图所得，所述超宽带通信低噪声放大器100覆盖3.1GHz-10.6GHz宽带频段。第一级放大电路1在高频处的增益下降得到了第二级放大电路2的高频处的增益补偿。Please refer to Fig. 4, which is a schematic diagram of the gain-frequency curve of an ultra-wideband communication low-noise amplifier according to an embodiment of the present invention. As can be seen from the figure, the ultra-wideband communication low noise amplifier 100 covers a broadband frequency band of 3.1GHz-10.6GHz. The gain drop of the first-stage amplifying circuit 1 at high frequencies is compensated by the gain of the second-stage amplifying circuit 2 at high frequencies.
通过上述电路结构，所述超宽带通信低噪声放大器100的第一级放大电路1谐振在低频段，第二级放大电路2谐振在高频点，使得第一级放大电路1在高频处的增益下降得到了第二级放大电路2的高频处的增益补偿，两级均衡放大，实现了带宽的延拓，从而使得本实用新型的超宽带通信低噪声放大器的工作频带宽且性能指标高。所述超宽带通信低噪声放大器100满足了超宽带通信标准的性能指标要求：第一点、宽带匹配，以满足整个频带内尽量小的回波损耗。第二点、足够大的增益，用来放大接收到的微弱射频信号。第三点、低噪声，可以提高整个***的灵敏度。第四点、低功耗，提高整机电池使用寿命。第五点、电路版图面积尽可能小，以节约对应的芯片的生产成本。Through the above-mentioned circuit structure, the first-stage amplifying circuit 1 of the ultra-wideband communication low-noise amplifier 100 resonates at a low frequency band, and the second-stage amplifying circuit 2 resonates at a high-frequency point, so that the first-stage amplifying circuit 1 resonates at a high frequency. The gain drop is compensated by the gain compensation at the high frequency of the second-stage amplifying circuit 2, and the two-stage balanced amplification realizes the extension of the bandwidth, so that the working frequency bandwidth of the ultra-wideband communication low-noise amplifier of the present invention is high and the performance index is high . The ultra-wideband communication low noise amplifier 100 meets the performance index requirements of the ultra-wideband communication standard: the first point, wideband matching, to meet the return loss as small as possible in the entire frequency band. The second point is a large enough gain to amplify the received weak RF signal. The third point, low noise, can improve the sensitivity of the whole system. The fourth point, low power consumption, improves the service life of the battery of the whole machine. Fifth point, the circuit layout area is as small as possible to save the production cost of the corresponding chip.
(实施例二)(Example 2)
实施例二的超宽带通信低噪声放大器200为实施例一超宽带通信低噪声放大器100不同工艺的另一种具体电路结构。The ultra-wideband communication low noise amplifier 200 of the second embodiment is another specific circuit structure of the different technology of the ultra-wideband communication low noise amplifier 100 of the first embodiment.
请参考图5所示，图5为本实用新型实施例二超宽带通信低噪声放大器200的电路结构图。Please refer to FIG. 5 , which is a circuit structure diagram of an ultra-wideband communication low noise amplifier 200 according to Embodiment 2 of the present invention.
实施例二与实施例一基本相同，实施例二与实施例一的区别在于超宽带通信低噪声放大器200采用BJT晶体管工艺实现。 Embodiment 2 is basically the same as Embodiment 1, and the difference between Embodiment 2 and Embodiment 1 is that the UWB communication low noise amplifier 200 is realized by BJT transistor technology.
所述超宽带通信低噪声放大器100包括依次连接的第一放大级电路4、第二放大级电路5和输出跟随级电路6。The UWB communication low noise amplifier 100 includes a first amplifying stage circuit 4 , a second amplifying stage circuit 5 and an output follower stage circuit 6 connected in sequence.
所述第一放大级电路4用于接收外部输入的射频信号实现共基极输入阻抗和发射极阻抗的宽带输入匹配。The first amplifying stage circuit 4 is used to receive an externally input radio frequency signal to realize broadband input matching of common base input impedance and emitter impedance.
具体的，所述第一放大级电路4包括第五电容C5、第六电容C6、第五晶体管Q1、第三电感L3以及第四电阻R4。Specifically, the first amplifying stage circuit 4 includes a fifth capacitor C5, a sixth capacitor C6, a fifth transistor Q1, a third inductor L3 and a fourth resistor R4.
所述第一放大级电路4的电路结构为：The circuit structure of the first amplifying stage circuit 4 is:
所述第五电容C5的第一端作为所述超宽带通信低噪声放大器 200的输入端RFIN。The first terminal of the fifth capacitor C5 is used as the input terminal RFIN of the ultra-wideband communication low noise amplifier 200.
所述第五电容C5的第二端分别连接至所述第三电感L3的第一端和所述第五晶体管Q1的发射极，所述第三电感L3的第二端连接至接地GND。The second terminal of the fifth capacitor C5 is respectively connected to the first terminal of the third inductor L3 and the emitter of the fifth transistor Q1, and the second terminal of the third inductor L3 is connected to the ground GND.
所述第五晶体管Q1的基极连接至第四偏置电压VBE1，所述第五晶体管Q1的集电极分别连接至所述第四电阻R4的第二端和所述第六电容C6的第一端，所述第四电阻R4的第一端连接至电源电压VCC。The base of the fifth transistor Q1 is connected to the fourth bias voltage VBE1, and the collector of the fifth transistor Q1 is respectively connected to the second end of the fourth resistor R4 and the first end of the sixth capacitor C6. Terminal, the first terminal of the fourth resistor R4 is connected to the power supply voltage VCC.
所述第六电容C6的第二端连接至所述第二放大级电路5的输入端。The second end of the sixth capacitor C6 is connected to the input end of the second amplifying stage circuit 5 .
所述第一放大级电路4的工作原理为:The operating principle of the first amplification stage circuit 4 is:
所述第一放大级电路4通过第五电容C5、第六电容C6、第五晶体管Q1、第三电感L3以及第四电阻R4。共同构成共基放大级电路。具体的，第五晶体管Q1为第一级放大器晶体管，第五电容C5为输入隔直电容，第四电阻R4为所述第一放大级电路1的负载电阻，第六电容C6为所述第一放大级电路4和所述第二放大级电路5的隔直电容，第三电感L3和第五晶体管Q1的晶体管的寄生电容谐振在工作频段，输入阻抗即为第五晶体管Q1的发射极本征输入阻抗，该电路结构实现了宽带的输入功率匹配和射频信号的初步放大。The first amplifying stage circuit 4 passes through the fifth capacitor C5, the sixth capacitor C6, the fifth transistor Q1, the third inductor L3 and the fourth resistor R4. Together they form a common base amplifier circuit. Specifically, the fifth transistor Q1 is the first-stage amplifier transistor, the fifth capacitor C5 is the input DC blocking capacitor, the fourth resistor R4 is the load resistor of the first amplifier circuit 1, and the sixth capacitor C6 is the first The DC blocking capacitance of the amplifier stage circuit 4 and the second amplifier stage circuit 5, the third inductance L3 and the parasitic capacitance of the transistor of the fifth transistor Q1 resonate in the working frequency band, and the input impedance is the emitter intrinsic characteristic of the fifth transistor Q1 Input impedance, the circuit structure realizes broadband input power matching and preliminary amplification of radio frequency signals.
所述超宽带通信低噪声放大器200的输入端RFIN输入射频信号通过作为隔直电容的第五电容C5加载到第五晶体管Q1的基极，产生的小信号电流通过作为负载的第四电阻R4转变为小信号电压，通过作为级间隔直电容的第六电容C6耦合到所述第二放大级电路5的输入端。The input terminal RFIN of the ultra-wideband communication low-noise amplifier 200 inputs a radio frequency signal through the fifth capacitor C5 as a DC blocking capacitor and loads it to the base of the fifth transistor Q1, and the generated small signal current is converted through the fourth resistor R4 as a load It is a small signal voltage, coupled to the input terminal of the second amplifying stage circuit 5 through the sixth capacitor C6 as a direct capacitor between stages.
本实施例二中，所述第五电容C5和所述第六电容C6均为参数可调电容，所述第三电感L3为参数可调电感，以及所述第四电阻R4为参数可调电阻，上述元器件均为参数可调，以调整所述第一放大级电路4的工作频点为3.1GHz。所述第一放大级电路4设置工作频点调整在低频(3.1GHz附近)。In the second embodiment, the fifth capacitor C5 and the sixth capacitor C6 are parameter-adjustable capacitors, the third inductor L3 is a parameter-adjustable inductor, and the fourth resistor R4 is a parameter-adjustable resistor , the parameters of the above-mentioned components are all adjustable, so as to adjust the working frequency of the first amplifying stage circuit 4 to be 3.1 GHz. The operating frequency point of the first amplifying stage circuit 4 is adjusted to a low frequency (near 3.1 GHz).
所述第二放大级电路5用于信号放大。The second amplification stage circuit 5 is used for signal amplification.
具体的，所述第二放大级电路5包括第五电阻R5、第六电阻R6、第四电感L4、第七电容C7以及第六晶体管Q2。Specifically, the second amplifying stage circuit 5 includes a fifth resistor R5, a sixth resistor R6, a fourth inductor L4, a seventh capacitor C7, and a sixth transistor Q2.
所述第二放大级电路5的电路结构为：The circuit structure of the second amplifying stage circuit 5 is:
所述第六晶体管Q2的基极作为所述第二放大级电路5的输入端，且所述第六晶体管Q2的基极分别连接至所述第六电容C6的第二端和所述第六电阻R6的第二端，所述第六电阻R6的第一端连接至第五偏置电压VBE2。The base of the sixth transistor Q2 is used as the input end of the second amplifying stage circuit 5, and the base of the sixth transistor Q2 is respectively connected to the second end of the sixth capacitor C6 and the sixth The second terminal of the resistor R6 and the first terminal of the sixth resistor R6 are connected to the fifth bias voltage VBE2.
所述第六晶体管Q2的发射极连接至接地GND，所述第六晶体管Q2的集电极分别连接至所述输出跟随级电路6的输入端、所述第四电感L4的第二端、所述第五电阻R5的第二端及所述第七电容C7的第二端。The emitter of the sixth transistor Q2 is connected to the ground GND, and the collector of the sixth transistor Q2 is respectively connected to the input terminal of the output follower circuit 6, the second terminal of the fourth inductor L4, the The second terminal of the fifth resistor R5 and the second terminal of the seventh capacitor C7.
所述第四电感L4的第一端、所述第五电阻R5的第一端及所述第七电容C7的第一端均连接至电源电压VCC。The first terminal of the fourth inductor L4, the first terminal of the fifth resistor R5 and the first terminal of the seventh capacitor C7 are all connected to the power supply voltage VCC.
其中，所述第五晶体管Q1和所述第六晶体管Q2均为BJT晶体管。Wherein, both the fifth transistor Q1 and the sixth transistor Q2 are BJT transistors.
所述第二放大级电路5的工作原理为:The operating principle of the second amplifying stage circuit 5 is:
所述第二放大级电路2通过第五电阻R5、第六电阻R6、第四电感L4、第七电容C7以及第六晶体管Q2共同构成共基放大级电路。具体的，第六晶体管Q2为共源放大管，第四电感L4为负载电感，第七电容C7为负载电容，第五电阻R5为负载电阻，第六电阻R6为偏置电阻。The second amplifying stage circuit 2 forms a common base amplifying stage circuit through the fifth resistor R5, the sixth resistor R6, the fourth inductor L4, the seventh capacitor C7 and the sixth transistor Q2. Specifically, the sixth transistor Q2 is a common source amplifier tube, the fourth inductor L4 is a load inductor, the seventh capacitor C7 is a load capacitor, the fifth resistor R5 is a load resistor, and the sixth resistor R6 is a bias resistor.
第五偏置电压VBE2通过第六电阻R6为第六晶体管Q2提供偏置电压。第四电感L4为扼流电感，并和第七电容C7谐振，同第五电阻R5一起作为所述第二放大级电路5的负载。The fifth bias voltage VBE2 provides a bias voltage for the sixth transistor Q2 through the sixth resistor R6. The fourth inductance L4 is a choke inductance, resonates with the seventh capacitor C7, and acts as a load of the second amplifying stage circuit 5 together with the fifth resistor R5.
本实施例二中，所述第五电阻R5和所述第六电阻R6均为参数可调电阻，所述第四电感L4为参数可调电感，以及所述第七电容C7为参数可调电容，上述元器件均为参数可调，以调整所述第二放大级电路5的工作频点为10.6GHz。所述第二放大级电路5工作频点调整在高频(10.6GHz)。所述第二放大级电路5实现了对 射频信号的进一步放大。In the second embodiment, the fifth resistor R5 and the sixth resistor R6 are parameter-adjustable resistors, the fourth inductor L4 is a parameter-adjustable inductor, and the seventh capacitor C7 is a parameter-adjustable capacitor , the parameters of the above components are adjustable, so as to adjust the operating frequency of the second amplifier circuit 5 to be 10.6 GHz. The operating frequency of the second amplifying stage circuit 5 is adjusted at high frequency (10.6 GHz). The second amplifying stage circuit 5 realizes further amplification of the radio frequency signal.
所述输出跟随级电路6用于实现宽带输出匹配。The output follower circuit 6 is used to realize broadband output matching.
具体的，所述输出跟随级电路6包括第七晶体管Q3、第二电流源Idc2及第八电容C8。Specifically, the output follower circuit 6 includes a seventh transistor Q3, a second current source Idc2 and an eighth capacitor C8.
所述输出跟随级电路6的电路结构为：The circuit structure of the output following stage circuit 6 is:
所述第七晶体管Q3的基极作为所述输出跟随级电路6的输入端，所述第七晶体管Q3的集电极连接至电源电压VCC。The base of the seventh transistor Q3 is used as the input terminal of the output follower circuit 6 , and the collector of the seventh transistor Q3 is connected to the power supply voltage VCC.
所述第七晶体管Q3的发射极分别连接至所述第二电流源Idc2的正极端和所述第八电容C8的第一端，所述第二电流源Idc2的负极端连接至接地GND。The emitter of the seventh transistor Q3 is respectively connected to the positive terminal of the second current source Idc2 and the first terminal of the eighth capacitor C8, and the negative terminal of the second current source Idc2 is connected to the ground GND.
所述第八电容C8的第二端作为所述输出跟随级电路6的输出端。也就是说，所述第八电容C8的第二端同时作为所述超宽带通信低噪声放大器200的输出端RFOUT。The second terminal of the eighth capacitor C8 is used as the output terminal of the output follower circuit 6 . That is to say, the second terminal of the eighth capacitor C8 serves as the output terminal RFOUT of the ultra-wideband communication low noise amplifier 200 at the same time.
其中，所述第七晶体管Q3均为BJT晶体管。Wherein, the seventh transistor Q3 is a BJT transistor.
所述输出跟随级电路6的工作原理为:The operating principle of the output following stage circuit 6 is:
所述输出跟随级电路6采用发射极极跟随组态晶体管，通过第七晶体管Q3的尺寸和第二电流源Idc2的偏置电流的合适选取，实现输出阻抗和负载阻抗的宽带匹配。The output follower stage circuit 6 adopts emitter follower configuration transistors, and realizes wideband matching of output impedance and load impedance through proper selection of the size of the seventh transistor Q3 and the bias current of the second current source Idc2.
第七晶体管Q3通过第二电流源Idc2进行偏置，实现了和所述超宽带通信低噪声放大器200的输出端RFOUT连接的外部50欧姆负载阻抗的匹配。The seventh transistor Q3 is biased by the second current source Idc2 to realize the impedance matching of the external 50 ohm load connected to the output terminal RFOUT of the UWB communication low noise amplifier 200 .
通过上述电路结构，所述超宽带通信低噪声放大器200的第一级放大电路4谐振在低频段，第二级放大电路5谐振在高频点，使得第一级放大电路4在高频处的增益下降得到了第二级放大电路5的高频处的增益补偿，两级均衡放大，实现了带宽的延拓，从而使得本实用新型的超宽带通信低噪声放大器的工作频带宽且性能指标高。所述超宽带通信低噪声放大器200满足了超宽带通信标准的性能指标要求：第一点、宽带匹配，以满足整个频带内尽量小的回波损耗。第二点、足够大的增益，用来放大接收到的微弱射频信号。第三点、低噪声，可以提高整个***的灵敏度。第四点、低功耗， 提高整机电池使用寿命。第五点、电路版图面积尽可能小，以节约对应的芯片的生产成本。Through the above-mentioned circuit structure, the first-stage amplifying circuit 4 of the ultra-broadband communication low-noise amplifier 200 resonates at a low frequency band, and the second-stage amplifying circuit 5 resonates at a high-frequency point, so that the first-stage amplifying circuit 4 resonates at a high frequency. Gain reduction has been compensated by the gain compensation at the high frequency of the second-stage amplifier circuit 5, and the two-stage balanced amplification has realized the extension of the bandwidth, so that the working frequency bandwidth of the ultra-wideband communication low-noise amplifier of the present invention is high and the performance index is high . The ultra-wideband communication low noise amplifier 200 meets the performance index requirements of the ultra-wideband communication standard: the first point, wideband matching, to meet the return loss as small as possible in the entire frequency band. The second point is a large enough gain to amplify the received weak RF signal. The third point, low noise, can improve the sensitivity of the whole system. The fourth point, low power consumption, improves the service life of the battery of the whole machine. Fifth point, the circuit layout area is as small as possible to save the production cost of the corresponding chip.
需要指出的是，本实用新型采用的相关电阻、电容、电感、电流源以及晶体管均为本领域常用的元器件，具有指标和参数根据实际应用进行调整，在此，不作详细赘述。It should be pointed out that the relevant resistors, capacitors, inductors, current sources, and transistors used in the present invention are all commonly used components in the field, with indicators and parameters that can be adjusted according to actual applications, and will not be described in detail here.
本实用新型还提供了一种射频芯片，所述射频芯片包括所述超宽带通信低噪声放大器100。所述射频芯片因采用所述超宽带通信低噪声放大器100可以工作频带宽且性能指标高。The utility model also provides a radio frequency chip, and the radio frequency chip includes the ultra-wideband communication low noise amplifier 100 . Because the radio frequency chip adopts the ultra-wideband communication low-noise amplifier 100, it can work in a wide frequency band and has high performance indicators.
本实用新型还提供了另一种射频芯片。所述射频芯片包括所述超宽带通信低噪声放大器200。所述射频芯片因采用所述超宽带通信低噪声放大器200可以工作频带宽且性能指标高。The utility model also provides another radio frequency chip. The radio frequency chip includes the UWB communication low noise amplifier 200 . Because the radio frequency chip adopts the ultra-wideband communication low-noise amplifier 200, it can work with a wide frequency band and high performance index.
与相关技术相比，本实用新型的超宽带通信低噪声放大器和射频芯片通过设置依次连接的第一放大级电路、第二放大级电路和输出跟随级电路。其中，第一放大级电路通过第一电容、第二电容、第一晶体管、第一电感以及第一电阻共同构成共栅放大级电路，该电路工作频点调整在低频(3.1GHz附近)。第二放大级电路通过第二电阻、第三电阻、第二电感、第三电容、第二晶体管及第三晶体管共同构成共源共栅放大级电路，该电路工作频点调整在高频(10.6GHz)。上述通过这种第一级放大电路谐振在低频段，第二级放大电路谐振在高频点的电路结构，使得第一级放大电路在高频处的增益下降得到了第二级放大电路的高频处的增益补偿，两级均衡放大，实现了带宽的延拓，满足了超宽带通信标准的性能指标要求，从而使得本实用新型的超宽带通信低噪声放大器和芯片的工作频带宽且性能指标高。Compared with the related technology, the ultra-wideband communication low-noise amplifier and the radio frequency chip of the utility model are provided with a first amplifying stage circuit, a second amplifying stage circuit and an output follower stage circuit which are sequentially connected. Wherein, the first amplifying stage circuit forms a common gate amplifying stage circuit through the first capacitor, the second capacitor, the first transistor, the first inductor and the first resistor, and the working frequency of the circuit is adjusted to a low frequency (near 3.1 GHz). The second amplifying stage circuit constitutes a cascode amplifying stage circuit through the second resistor, the third resistor, the second inductance, the third capacitor, the second transistor and the third transistor, and the operating frequency of the circuit is adjusted at a high frequency (10.6 GHz). The above-mentioned circuit structure in which the first-stage amplifying circuit resonates at the low frequency band and the second-stage amplifying circuit resonates at the high-frequency point makes the gain reduction of the first-stage amplifying circuit at high frequencies obtain the high frequency of the second-stage amplifying circuit. Gain compensation at the high frequency, two-stage balanced amplification, realizes the extension of the bandwidth, meets the performance index requirements of the ultra-wideband communication standard, so that the operating frequency bandwidth and performance index of the ultra-wideband communication low noise amplifier and the chip of the utility model high.
需要说明的是，以上参照附图所描述的各个实施例仅用以说明本实用新型而非限制本实用新型的范围，本领域的普通技术人员应当理解，在不脱离本实用新型的精神和范围的前提下对本实用新型进行的修改或者等同替换，均应涵盖在本实用新型的范围之内。此外，除上下文另有所指外，以单数形式出现的词包括复数形式，反之亦然。另外，除非特别说明，那么任何实施例的全部或一部分可 结合任何其它实施例的全部或一部分来使用。It should be noted that the various embodiments described above with reference to the accompanying drawings are only used to illustrate the utility model rather than limit the scope of the utility model, those of ordinary skill in the art should understand that without departing from the spirit and scope of the utility model Any modifications or equivalent replacements made to the present utility model under the premise of the present utility model shall be covered within the scope of the present utility model. Further, words appearing in the singular include the plural and vice versa unless the context otherwise requires. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.

Claims (10)

  1. 一种超宽带通信低噪声放大器，其特征在于，该低噪声放大器包括依次连接的第一放大级电路、第二放大级电路和输出跟随级电路；A low-noise amplifier for ultra-wideband communication, characterized in that the low-noise amplifier includes a first amplifying stage circuit, a second amplifying stage circuit, and an output follower stage circuit connected in sequence;
    所述第一放大级电路用于接收外部输入的射频信号实现共栅极输入阻抗和源极阻抗的宽带输入匹配；The first amplifying stage circuit is used to receive an externally input radio frequency signal to realize broadband input matching of common gate input impedance and source impedance;
    所述第二放大级电路用于信号放大；The second amplification stage circuit is used for signal amplification;
    所述输出跟随级电路用于实现宽带输出匹配；The output following stage circuit is used to realize broadband output matching;
    所述第一放大级电路包括第一电容、第二电容、第一晶体管、第一电感以及第一电阻；The first amplifying stage circuit includes a first capacitor, a second capacitor, a first transistor, a first inductor and a first resistor;
    所述第一电容的第一端作为所述超宽带通信低噪声放大器的输入端；The first end of the first capacitor is used as the input end of the ultra-wideband communication low noise amplifier;
    所述第一电容的第二端分别连接至所述第一电感的第一端和所述第一晶体管的源极，所述第一电感的第二端连接至接地；The second end of the first capacitor is respectively connected to the first end of the first inductor and the source of the first transistor, and the second end of the first inductor is connected to ground;
    所述第一晶体管的栅极连接至第一偏置电压，所述第一晶体管的漏极分别连接至所述第一电阻的第二端和所述第二电容的第一端，所述第一电阻的第一端连接至电源电压；The gate of the first transistor is connected to a first bias voltage, the drain of the first transistor is respectively connected to the second end of the first resistor and the first end of the second capacitor, and the first The first end of a resistor is connected to the power supply voltage;
    所述第二电容的第二端连接至所述第二放大级电路的输入端；The second end of the second capacitor is connected to the input end of the second amplifying stage circuit;
    所述第二放大级电路包括第二电阻、第三电阻、第二电感、第三电容、第二晶体管及第三晶体管；The second amplifying stage circuit includes a second resistor, a third resistor, a second inductor, a third capacitor, a second transistor, and a third transistor;
    所述第二晶体管的栅极作为所述第二放大级电路的输入端，且所述第二晶体管的栅极分别连接至所述第二电容的第二端和所述第三电阻的第二端，所述第三电阻的第一端连接至第三偏置电压；The gate of the second transistor is used as the input terminal of the second amplifying stage circuit, and the gate of the second transistor is respectively connected to the second terminal of the second capacitor and the second terminal of the third resistor. end, the first end of the third resistor is connected to a third bias voltage;
    所述第二晶体管的源极连接至接地，所述第二晶体管的漏极连接至所述第三晶体管的源极；The source of the second transistor is connected to ground, and the drain of the second transistor is connected to the source of the third transistor;
    所述第三晶体管的栅极连接至第二偏置电压，所述第三晶体管的漏极分别连接至所述输出跟随级电路的输入端、所述第二电感的第二端、所述第二电阻的第二端及所述第三电容的第二端；The gate of the third transistor is connected to the second bias voltage, and the drain of the third transistor is respectively connected to the input end of the output follower circuit, the second end of the second inductor, the first the second end of the second resistor and the second end of the third capacitor;
    所述第二电感的第一端、所述第二电阻的第一端及所述第三电容的第一端均连接至电源电压；The first end of the second inductor, the first end of the second resistor, and the first end of the third capacitor are all connected to a power supply voltage;
    其中，所述第一晶体管、所述第二晶体管以及所述第三晶体管均为MOS晶体管。Wherein, the first transistor, the second transistor and the third transistor are all MOS transistors.
  2. 根据权利要求1所述的超宽带通信低噪声放大器，其特征在于，所述输出跟随级电路包括第四晶体管、第一电流源及第四电容；The ultra-wideband communication low-noise amplifier according to claim 1, wherein the output follower circuit includes a fourth transistor, a first current source, and a fourth capacitor;
    所述第四晶体管的栅极作为所述输出跟随级电路的输入端，所述第四晶体管的漏极连接至电源电压；The gate of the fourth transistor is used as the input terminal of the output follower circuit, and the drain of the fourth transistor is connected to a power supply voltage;
    所述第四晶体管的源极分别连接至所述第一电流源的正极端和所述第四电容的第一端，所述第一电流源的负极端连接至接地；The source of the fourth transistor is respectively connected to the positive terminal of the first current source and the first terminal of the fourth capacitor, and the negative terminal of the first current source is connected to ground;
    所述第四电容的第二端作为所述输出跟随级电路的输出端；The second terminal of the fourth capacitor serves as the output terminal of the output follower circuit;
    其中，所述第四晶体管为MOS晶体管。Wherein, the fourth transistor is a MOS transistor.
  3. 根据权利要求1所述的超宽带通信低噪声放大器，其特征在于，所述第一电容和所述第二电容均为参数可调电容，所述第一电感为参数可调电感，以及所述第一电阻为参数可调电阻，以调整所述第一放大级电路的工作频点为3.1GHz。The low-noise amplifier for ultra-wideband communication according to claim 1, wherein both the first capacitor and the second capacitor are parameter-tunable capacitors, the first inductor is a parameter-tunable inductor, and the The first resistor is a parameter-adjustable resistor, so as to adjust the operating frequency point of the first amplifying stage circuit to 3.1 GHz.
  4. 根据权利要求1所述的超宽带通信低噪声放大器，其特征在于，所述第二电阻和所述第三电阻均为参数可调电阻，所述第二电感为参数可调电感，以及所述第三电容为参数可调电容，以调整所述第二放大级电路的工作频点为10.6GHz。The low-noise amplifier for ultra-wideband communication according to claim 1, wherein the second resistor and the third resistor are parameter-adjustable resistors, the second inductance is a parameter-adjustable inductor, and the The third capacitor is a parameter-adjustable capacitor to adjust the operating frequency of the second amplifier circuit to 10.6 GHz.
  5. 一种超宽带通信低噪声放大器，其特征在于，该低噪声放大器包括依次连接的第一放大级电路、第二放大级电路和输出跟随级电路；A low-noise amplifier for ultra-wideband communication, characterized in that the low-noise amplifier includes a first amplifying stage circuit, a second amplifying stage circuit, and an output follower stage circuit connected in sequence;
    所述第一放大级电路用于接收外部输入的射频信号实现共基极输入阻抗和发射极阻抗的宽带输入匹配；The first amplifying stage circuit is used to receive an externally input radio frequency signal to realize broadband input matching of common base input impedance and emitter impedance;
    所述第二放大级电路用于信号放大；The second amplification stage circuit is used for signal amplification;
    所述输出跟随级电路用于实现宽带输出匹配；The output following stage circuit is used to realize broadband output matching;
    所述第一放大级电路包括第五电容、第六电容、第五晶体管、第三电感以及第四电阻；The first amplifying stage circuit includes a fifth capacitor, a sixth capacitor, a fifth transistor, a third inductor and a fourth resistor;
    所述第五电容的第一端作为所述超宽带通信低噪声放大器的输入端；The first end of the fifth capacitor is used as the input end of the ultra-wideband communication low noise amplifier;
    所述第五电容的第二端分别连接至所述第三电感的第一端和所述第五晶体管的发射极，所述第三电感的第二端连接至接地；The second end of the fifth capacitor is respectively connected to the first end of the third inductor and the emitter of the fifth transistor, and the second end of the third inductor is connected to ground;
    所述第五晶体管的基极连接至第四偏置电压，所述第五晶体管的集电极分别连接至所述第四电阻的第二端和所述第六电容的第一端，所述第四电阻的第一端连接至电源电压；The base of the fifth transistor is connected to the fourth bias voltage, the collector of the fifth transistor is respectively connected to the second end of the fourth resistor and the first end of the sixth capacitor, the first The first ends of the four resistors are connected to the power supply voltage;
    所述第六电容的第二端连接至所述第二放大级电路的输入端；The second end of the sixth capacitor is connected to the input end of the second amplifying stage circuit;
    所述第二放大级电路包括第五电阻、第六电阻、第四电感、第七电容以及第六晶体管；The second amplifying stage circuit includes a fifth resistor, a sixth resistor, a fourth inductor, a seventh capacitor and a sixth transistor;
    所述第六晶体管的基极作为所述第二放大级电路的输入端，且所述第六晶体管的基极分别连接至所述第六电容的第二端和所述第六电阻的第二端，所述第六电阻的第一端连接至第五偏置电压；The base of the sixth transistor is used as the input end of the second amplifying stage circuit, and the base of the sixth transistor is respectively connected to the second end of the sixth capacitor and the second end of the sixth resistor. terminal, the first terminal of the sixth resistor is connected to the fifth bias voltage;
    所述第六晶体管的发射极连接至接地，所述第六晶体管的集电极分别连接至所述输出跟随级电路的输入端、所述第四电感的第二端、所述第五电阻的第二端及所述第七电容的第二端；The emitter of the sixth transistor is connected to ground, and the collector of the sixth transistor is respectively connected to the input terminal of the output follower circuit, the second terminal of the fourth inductor, and the first terminal of the fifth resistor. two terminals and the second terminal of the seventh capacitor;
    所述第四电感的第一端、所述第五电阻的第一端及所述第七电容的第一端均连接至电源电压；The first end of the fourth inductor, the first end of the fifth resistor, and the first end of the seventh capacitor are all connected to a power supply voltage;
    其中，所述第五晶体管和所述第六晶体管均为BJT晶体管。Wherein, both the fifth transistor and the sixth transistor are BJT transistors.
  6. 根据权利要求1所述的超宽带通信低噪声放大器，其特征在于，所述输出跟随级电路包括第七晶体管、第二电流源及第八电容；The ultra-wideband communication low-noise amplifier according to claim 1, wherein the output follower circuit includes a seventh transistor, a second current source, and an eighth capacitor;
    所述第七晶体管的基极作为所述输出跟随级电路的输入端，所述第七晶体管的集电极连接至电源电压；The base of the seventh transistor is used as the input terminal of the output follower circuit, and the collector of the seventh transistor is connected to a power supply voltage;
    所述第七晶体管的发射极分别连接至所述第二电流源的正极端和所述第八电容的第一端，所述第二电流源的负极端连接至接地；The emitter of the seventh transistor is respectively connected to the positive terminal of the second current source and the first terminal of the eighth capacitor, and the negative terminal of the second current source is connected to ground;
    所述第八电容的第二端作为所述输出跟随级电路的输出端；The second terminal of the eighth capacitor is used as the output terminal of the output follower circuit;
    其中，所述第七晶体管均为BJT晶体管。Wherein, the seventh transistors are all BJT transistors.
  7. 根据权利要求1所述的超宽带通信低噪声放大器，其特征在于，所述第五电容和所述第六电容均为参数可调电容，所述第三电感为参数可调电感，以及所述第四电阻为参数可调电阻，以调整 所述第一放大级电路的工作频点为3.1GHz。The low-noise amplifier for ultra-wideband communication according to claim 1, wherein the fifth capacitor and the sixth capacitor are parameter-tunable capacitors, the third inductor is a parameter-tunable inductor, and the The fourth resistor is a parameter-adjustable resistor to adjust the operating frequency of the first amplifier circuit to 3.1 GHz.
  8. 根据权利要求1所述的超宽带通信低噪声放大器，其特征在于，所述第五电阻和所述第六电阻均为参数可调电阻，所述第四电感为参数可调电感，以及所述第七电容为参数可调电容，以调整所述第二放大级电路的工作频点为10.6GHz。The low-noise amplifier for ultra-wideband communication according to claim 1, wherein the fifth resistor and the sixth resistor are parameter-adjustable resistors, the fourth inductance is a parameter-adjustable inductor, and the The seventh capacitor is a parameter adjustable capacitor to adjust the operating frequency of the second amplifier circuit to 10.6 GHz.
  9. 一种射频芯片，其特征在于，所述芯片包括如权利要求1-4中任意一项所述的超宽带通信低噪声放大器。A radio frequency chip, characterized in that the chip includes the ultra-wideband communication low noise amplifier according to any one of claims 1-4.
  10. 一种射频芯片，其特征在于，所述芯片包括如权利要求5-8中任意一项所述的超宽带通信低噪声放大器。A radio frequency chip, characterized in that the chip includes the ultra-wideband communication low noise amplifier according to any one of claims 5-8.
PCT/CN2022/125454 2021-11-01 2022-10-14 Low-noise amplifier of ultra-wideband communication standard, and radio frequency chip WO2023082939A1 (en)

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