CN101282110A - Low-power consumption single-ended input difference output low-noise amplifier - Google Patents
Low-power consumption single-ended input difference output low-noise amplifier Download PDFInfo
- Publication number
- CN101282110A CN101282110A CNA2008101049503A CN200810104950A CN101282110A CN 101282110 A CN101282110 A CN 101282110A CN A2008101049503 A CNA2008101049503 A CN A2008101049503A CN 200810104950 A CN200810104950 A CN 200810104950A CN 101282110 A CN101282110 A CN 101282110A
- Authority
- CN
- China
- Prior art keywords
- amplifying circuit
- pass transistor
- nmos pass
- circuit
- common source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Amplifiers (AREA)
Abstract
The invention discloses a low power dissipation single end input difference output low noise amplifier, belonging to radio frequency communication technical field. The amplifier comprises an input matching circuit, a first stage amplifying circuit, a second stage common grid amplifying circuit and a second stage comon source amplifying circuit which are connected with each other, and an output load matching circuit, the input matching circuit is connected with the first stage amplifying circuit, a control circuit is provided between the first stage amplifying circuit and the second stage comon source amplifying circuit, the control circuit is used for controlling direct current flowing to the second stage common grid amplifying circuit to flow to the first stage amplifying circuit, meanwhile, stops the radio frequency signal outputted by the first stage amplifying circuit to flow to the source end of the second stage comon source amplifying circuit, the second stage comon source amplifying circuit and the second stage common grid amplifying circuit are respectively connected with one output load matching circuit. The invention can resuce half of the system power consumption, and the second amplifying circuits are symmetrical, thereby ensuring output noise, phase and gain of the differential signal more symmetrical.
Description
Technical field
The invention relates to the radio-frequency transmitter design in the radio-frequency communication technical field, be specifically related to a kind of low-power consumption single-ended input difference output low-noise amplifier.
Background technology
Along with wireless communication technology and CMOS integrated circuit technology fast development, wireless terminal miniaturization, low-power consumption, low cost, high-performance have become the inexorable trend of radio frequency integrated circuit (RFIC) development.
In the radio-frequency transmitter design, obtain good overall system performance, key is the front end of superior performance.The first order module low noise amplifier (LNA) of radio-frequency transmitter is one of circuit of wherein most critical, as shown in Figure 1, the function of single-ended input difference output low noise amplifier is to produce under the prerequisite of noise in lowland as far as possible, radiofrequency signal is amplified, to reduce the influence of noise that the subsequent stages module produces signal.LNA need have good noise factor, and enough gains are provided, and has minimum NF to guarantee whole receiving system; When received signal is big, enough linearities should be arranged simultaneously to reduce distorted signals.The prime of low noise amplifier is generally discrete radio frequency band filter in addition, because the transmission characteristic and the load that terminal connects of filter have much relations, the input impedance of low noise amplifier must meet the regulation of filter, in RF application, this impedance is set at 50 ohm of unified pure resistance values usually.
Current radio frequency receiver front-end module LNA and mixer operational version mainly contain: single-ended LNA and single balance mixer; Sheet outer Balun, difference LNA and double balanced mixer; And single-ended input difference output LNA and double balanced mixer.
Raising along with circuit level, particularly along with the development of the SOC that RF circuit and Baseband circuit are integrated, the substrate coupled noise becomes more and more serious, coupling does not suppress ability to substrate for single-ended amplifier, mixer etc., the substrate coupling can greatly influence the performance of low noise amplifier and mixer, the performance of the system receiver that finally deteriorates significantly.
Difference LNA and double balanced mixer scheme can better suppress the influence of common-mode noise, but need to use an extra balanced to unbalanced transformer Balun that the single-ended signal that antenna receives is converted into differential signal.Balanced to unbalanced transformer is difficult on the sheet integrated, and need to use the sheet external component, and can introduce the loss of 1-3dB, the sensitivity of this radio-frequency transmitter that will deteriorate significantly (about 1-3dB), the integrated level of reduction system improves system cost.
Therefore, the noise mismatch that traditional single-ended input difference output low noise amplifier can not solve mismatch problems, particularly differential signal between gain in the differential output signal, amplitude, the phase place well is serious, and power consumption is very big.
Summary of the invention
The present invention has overcome deficiency of the prior art, a kind of single-ended input difference output low noise amplifier of low-power consumption is provided, with on the basis of low-power consumption low noise amplifying signal, the differential signal of realization amplitude, phase place, noise output coupling satisfies the requirement of subsequent conditioning circuit to the high-quality differential signal.
Technical scheme of the present invention is:
A kind of low-power consumption single-ended input difference output low-noise amplifier, comprise input matching circuit and output loading match circuit, it is characterized in that, also comprise interconnective first order amplifying circuit, the second level is grid amplifying circuit and second level common source amplifying circuit altogether, input matching circuit is connected with first order amplifying circuit, between first order amplifying circuit and second level common source amplifying circuit, increase a control circuit is set, this control circuit, be used for control flows and flow into first order amplifying circuit to the direct current of second level common source amplifying circuit, the radiofrequency signal that stops first order amplifying circuit to be exported simultaneously flows to the source end of second level common source amplifying circuit, and described second level grid amplifying circuit altogether is connected an output loading match circuit respectively with described second level common source amplifying circuit.
Described first order amplifying circuit can be the common source amplifying circuit, described common source amplifying circuit and common grid amplifying circuit comprise a nmos pass transistor respectively, the grid end that is the nmos pass transistor M1 of described first order common source amplifying circuit is connected with input matching circuit, the drain terminal of the nmos pass transistor M1 of first order common source amplifying circuit is connected with the source end that the described second level is total to the nmos pass transistor M2 of grid amplifying circuit, simultaneously, the drain terminal of the nmos pass transistor M1 of described first order common source amplifying circuit also is connected with a capacitor C b; The other end of capacitor C b is connected with the grid of the nmos pass transistor M3 of second level common source amplifying circuit, and the second level altogether drain terminal of the drain terminal of the nmos pass transistor M2 of grid amplifying circuit and the nmos pass transistor M3 of second level common source amplifying circuit is connected with separately output loading match circuit respectively.
Described control circuit can comprise a capacitor C s and an inductance L ds, the end of described inductance L ds is connected with the drain terminal of the nmos pass transistor M1 of first order common source amplifying circuit, the other end of described inductance L ds links to each other the other end ground connection of capacitor C s with the source electrode of the nmos pass transistor M3 of second level common source amplifying circuit with capacitor C s.
Described first order amplifying circuit can be the cascade amplifying circuit, be that described first order cascade amplifying circuit comprises interconnective nmos pass transistor M1 and nmos pass transistor M4, described second level grid amplifying circuit altogether comprises a nmos pass transistor M2, described second level common source amplifying circuit comprises a nmos pass transistor M3, the grid end of the nmos pass transistor M1 of described first order cascade amplifying circuit is connected with the input noise match circuit, the drain terminal of above-mentioned nmos pass transistor M1 links to each other with the source end of the nmos pass transistor M4 of described first order cascade amplifying circuit, the grid termination bias voltage of the nmos pass transistor M4 of described first order cascade amplifying circuit, the drain terminal of the nmos pass transistor M4 of described first order cascade amplifying circuit is connected with the source end that the described second level is total to the nmos pass transistor M2 of grid amplifying circuit, simultaneously, the drain terminal of the nmos pass transistor M4 of described first order cascade amplifying circuit also is connected with a capacitor C b; The other end of capacitor C b is connected with the grid of the nmos pass transistor M3 of second level common source amplifying circuit, and the second level is total to the nmos pass transistor M2 of grid amplifying circuit and the drain terminal of the nmos pass transistor M3 of second level common source amplifying circuit is connected with the output loading match circuit respectively.
Described control circuit can comprise a capacitor C s and an inductance L ds, the end of described inductance L ds is connected with the drain terminal of the nmos pass transistor M4 of first order cascade amplifying circuit, the other end of described inductance L ds links to each other the other end ground connection of capacitor C s with the source electrode of the nmos pass transistor M3 of second level common source amplifying circuit with capacitor C s.
Described input matching circuit can comprise a capacitor C 1, an inductance L g and another inductance L s, the grid of the nmos pass transistor M1 of described first order common source amplifying circuit or first order cascade amplifying circuit connects above-mentioned inductance L g and above-mentioned capacitor C 1, the other end of capacitor C 1 links to each other with the source end of inductance L s and above-mentioned nmos pass transistor M1, and the other end of inductance L s is connected with ground.
Described output loading match circuit can comprise a capacitor C d, an inductance L d and a resistance R d, and described inductance L d and described resistance R d are connected in series, and inductance L d and resistance R d series circuit are connected in parallel with capacitor C d again.
Described inductance L g can be connected with inductance L 2 with the capacitor C 2 of a parallel connection.
Compared with prior art, the present invention has following beneficial effect and is:
(1) the control flows direct current of crossing second level common source amplifying circuit M3 flows to first order common source amplifying circuit M1, realize that this electric current of recycling realizes the purpose of current multiplexing, utilize this technology can make the power consumption of system reduce half and improve the noiseproof feature of system greatly;
(2) radiofrequency signal of control first order common source amplifying circuit M1 output makes them can only flow through grid and the second level drain electrode of grid amplifying circuit M2 altogether of second level common source amplifying circuit M3.Avoid radiofrequency signal to flow to the source end of M3, the gain of EVAC (Evacuation Network Computer Model) and noiseproof feature;
(3) in the control circuit of direct current and radiofrequency signal, the parasitic capacitance of two nodes of Lds reduces the influence of the parasitic capacitance of two nodes of Lds to system gain and noiseproof feature at operating frequency resonance;
(4) control circuit of direct current and radiofrequency signal provides three degree of freedom to system, is convenient to adjust the coupling of output gain signal, phase place and noise, helps realizing the differential output signal that mates.
(5) symmetrical configuration of amplifier, realize the differential output signal of gain, phase place, peak of noise symmetry easily, be specially adapted to radiofrequency signal, and realized single-ended input difference output low noise enlarging function, reduced the complexity of radio-frequency transmitter with less components and parts;
(6) low cost: in order to obtain more excellent systematic function, radio-frequency receiver front-end generally can use differential low noise amplifier and double balanced mixer, this input that needs radio-frequency transmitter is a differential signal, but the just single-ended signal of antenna actual reception needs to use the outer Balun of sheet that the single-ended signal that antenna receives is converted into differential signal.The present invention can be on the basis that does not influence systematic function, and without the outer Balun of sheet, it is integrated to be beneficial to CMOS technology, has saved the cost of radio-frequency transmitter; Further improve the integrated level and the portability of radio-frequency receiver front-end, improved the stability and the reliability of radio-frequency transmitter system, helped large-scale production.
Description of drawings
Fig. 1 is the big device of traditional single-ended input difference output narrow-band low-noise method;
Fig. 2 is an embodiment of the single-ended input difference output narrow-band low-noise amplifier that designs of the present invention;
Fig. 3 is another embodiment of the single-ended input difference output narrow-band low-noise amplifier that designs of the present invention;
Fig. 4 is an embodiment of the single-ended input difference output wideband low noise amplifier that designs of the present invention;
Fig. 5 is another embodiment of the single-ended input difference output wideband low noise amplifier that designs of the present invention;
The application that Fig. 6 utilizes this patent design contrasts with the noise mismatch of the operating frequency of gps system for the single-ended input difference output LNA of 1.575GHz, and the two-way output noise mismatch of this circuit is about 0.15dB as can be seen, is far smaller than 1dB, and performance is very good.The noise of circuit shown in the figure one wherein one road out-place noise and this circuit is more or less the same, but OUT+ place noise will be more than 3dB, and the noise mismatch is greater than 2dB, and performance is difficult to satisfy practical application.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
Embodiment one:
With reference to figure 2, single-ended input difference output narrow-band low-noise amplifier comprises: input matching circuit, first order common source amplifying circuit, the second level is the control circuit of grid amplifying circuit, second level common source amplifying circuit and direct current and radiofrequency signal altogether, this control circuit, be used for control flows and flow into first order amplifying circuit to the direct current of second level common source amplifying circuit, the radiofrequency signal that stops first order amplifying circuit to be exported simultaneously flows to the source end of second level common source amplifying circuit.First order common source amplifying circuit comprises a nmos pass transistor M1, second level grid amplifying circuit altogether comprises that a nmos pass transistor M2 and second level common source amplifying circuit comprise a nmos pass transistor M3, the control circuit of direct current and radiofrequency signal comprises a capacitor C s and an inductance L ds.
Described input matching circuit is input noise match circuit and power matching circuit, it comprises a capacitor C 1, an inductance L g and another inductance L s, inductance L g is connected with the grid of capacitor C 1 with nmos pass transistor M1, the other end of capacitor C 1 is connected with inductance L s with the source electrode of nmos pass transistor M1, and the other end of inductance L s is connected with ground; The drain terminal of nmos pass transistor M1 is connected with source end, inductance L ds, the capacitor C b of nmos pass transistor M2 respectively; The other end of capacitor C b is connected with the grid of nmos pass transistor M3, and the other end of inductance L ds links to each other the other end ground connection of capacitor C s with the source electrode of nmos pass transistor M3 with capacitor C s; 2. and 3. the drain terminal of nmos pass transistor M2 and nmos pass transistor M3 is respectively node, and they are connected with the output loading match circuit respectively.
The function that direct current of the present invention and radiofrequency signal control circuit are mainly realized is, control flows is crossed the direct current of M3, make it flow into M1, thereby the direct current that complete control flows is crossed M2 and M3 flow through M1, for system's amplifying circuit is provided with a more rational dc point by Lds.Compared to Figure 1, the present invention can make system power dissipation reduce half, and second level amplifying circuit is symmetrical more, thereby the output noise, phase place and the gain that guarantee differential signal are symmetrical more.
RF small signals RFin of the present invention amplifies through first order common source amplifying circuit by behind the input matching circuit, arrives node 1., and the small-signal of this amplification is X1; X1 is divided into two-way, and one the tunnel flows through second level grid amplifying circuit altogether, arrives node 2., realizes that grid amplify altogether; Other one the tunnel flows through capacitance, flows into second level common source amplifying circuit from Bias, arrives node 3., realizes that common source amplifies.The present invention is ingenious to be utilized the common source amplifying circuit and is total to the characteristic that grid amplifying circuit phase of output signal differs 180 °, is implemented under the identical situation of input signal X1, and phase of output signal differs 180 °.
The present invention for the isolation that improves system and input coupling to the influence of system output signal matching performance, can change first order common source amplifying circuit into the cascade amplifying circuit, as shown in Figure 3.First order cascade amplifying circuit comprises interconnective nmos pass transistor M1 and nmos pass transistor M4.
For the present invention is described in detail, second instantiation is provided, be that radiofrequency signal RFin frequency can be between 1.1-2GHz, the broadband LNA of this frequency band can be applied to gps system, the European galileo navigation is Chinese triones navigation system and Russian GLONASS navigation system etc.
The concrete annexation of the single-ended input difference output wideband low noise amplifier of the present invention is illustrated in figure 4 as: first order cascade amplifying circuit comprises interconnective nmos pass transistor M1 and nmos pass transistor M4, input matching circuit comprises: capacitor C 2 is connected in parallel with inductance L 2 and links to each other with inductance L g then, the other end of inductance L g links to each other with the grid end of capacitor C 1 and nmos pass transistor M1, the other end of capacitor C 1 links to each other with nmos pass transistor M1 source end with inductance L s, and the other end of inductance L s is connected with ground; The source end of the drain terminal of nmos pass transistor M1 and nmos pass transistor M4 links to each other, the grid termination bias voltage of nmos pass transistor M4, nmos pass transistor M4 drain terminal connects the source end of inductance L ds, capacitor C b and nmos pass transistor M2 respectively, the grid end of another termination nmos pass transistor M3 of capacitor C b; The other end of inductance L ds links to each other the other end ground connection of capacitor C s with the source end of capacitor C s and nmos pass transistor M3; The grid end Bias place of the grid termination bias voltage of nmos pass transistor M2, nmos pass transistor M3 connects bias voltage by big resistance; The drain terminal of nmos pass transistor M2, nmos pass transistor M3 links to each other with output broadband matching circuit (Rd, Ld, Cd) respectively; Broadband output matching circuit annexation is: inductance L d and resistance R d are connected in series, and inductance L d and resistance R d series circuit are connected in parallel with capacitor C d again, and the other end of this broadband output matching circuit is connected with operating voltage.
As Fig. 4 or shown in Figure 5: radiofrequency signal RFin passes through input matching circuit, enter into the grid end of the nmos pass transistor M1 of first order cascade amplifying circuit, arrive 1. point after amplifying by first order cascade amplifying circuit nmos pass transistor M1, because the restriction of radiofrequency signal and direct current control circuit, this radiofrequency signal can only enter into the grid end of second level common source amplifying circuit nmos pass transistor M3 and the source end that the second level is total to grid amplifying circuit nmos pass transistor M2 respectively, so 3. have the two-way output signal to arrive 2. respectively respectively locates, by adjusting radiofrequency signal and direct current control circuit (Lds, Cs, Cb) parameter of each components and parts can realize the gain of needs and the low noise differential signal of phase place height symmetry.
Radiofrequency signal RFin of the present invention passes through input matching circuit, enter into the grid end of first order common source amplifying circuit nmos pass transistor M1, input matching circuit mainly contains two effects at this, realize input power match and noise coupling, to realize to the effective utilization of input signal energy and the optimum optimization of noise, according to the difference of working frequency range, the value of input matching circuit has bigger variation, general 2nH＜Lg＜50nH, 0.1nH＜Ls＜1.5nH, 10fF＜C1＜2PF.
Radiofrequency signal arrives 1. point after amplifying by first order common source amplifying circuit M1, because the restriction of radiofrequency signal and direct current control circuit, this radiofrequency signal can only enter into the grid end of nmos pass transistor M3 of second level common source amplifying circuit and the second level source end of the nmos pass transistor M2 of grid amplifying circuit altogether respectively, arrive respectively and 2. 3. locate, by adjusting the parameter of radiofrequency signal and each components and parts of direct current control circuit, can realize the gain of needs and the low noise differential signal of phase place height symmetry, according to the difference of working frequency range, its parameter can be at 2nH＜Lds＜60nH, 500fF＜Cs＜60pF, 200fF＜Cb＜50PF.
The minimum gate that the general taking technique of the long L of grid of nmos pass transistor M1, nmos pass transistor M2 and nmos pass transistor M3 allows is long, 15nm＜L＜0.5um, the span of grid width W according to the requirement of working frequency range and power consumption generally at 1um＜W＜500um.
Nmos pass transistor can have the transistor replacement of amplification characteristic with BJT, HBT, HEMT, FET, electron tube, vacuum tube etc. in addition, and this transistor also is not limited to silicon technology and realizes simultaneously, can use technologies such as GaAs, InP to realize.
The output loading match circuit has determined the output impedance of signal, and 3. the radiofrequency signal of flowing through 2. is by the output loading match circuit, obtain the gain, phase place and the peak of noise that need symmetrical differential signal.Different according to operating frequency and working band, its numerical value can change between 0.1nH＜Ld＜30nH, 5mOhm＜Rd＜1K Ohm, 20fF＜Cd＜2pF.
More than by specific embodiment single-ended input difference output low noise amplifier provided by the present invention has been described, it will be understood by those of skill in the art that in the scope that does not break away from essence of the present invention, can make certain deformation or modification to the present invention; Its preparation method also is not limited to disclosed content among the embodiment.
Claims (10)
1, a kind of low-power consumption single-ended input difference output low-noise amplifier, comprise input matching circuit and output loading match circuit, it is characterized in that, also comprise interconnective first order amplifying circuit, the second level is grid amplifying circuit and second level common source amplifying circuit altogether, input matching circuit is connected with first order amplifying circuit, between first order amplifying circuit and second level common source amplifying circuit, increase a control circuit is set, this control circuit, be used for control flows and flow into first order amplifying circuit to the direct current of second level common source amplifying circuit, the radiofrequency signal radiofrequency signal that stops first order amplifying circuit to be exported simultaneously flows to the source end of second level common source amplifying circuit, and described second level grid amplifying circuit altogether is connected an output loading match circuit respectively with described second level common source amplifying circuit.
2, low-power consumption single-ended input difference output low-noise amplifier according to claim 1 is characterized in that described first order amplifying circuit is the common source amplifying circuit.
3, low-power consumption single-ended input difference output low-noise amplifier according to claim 1 is characterized in that described first order amplifying circuit is the cascade amplifying circuit.
4, as low-power consumption single-ended input difference output low-noise amplifier as described in the claim 2, it is characterized in that, described common source amplifying circuit and common grid amplifying circuit comprise a nmos pass transistor respectively, the grid end of the nmos pass transistor M1 of described first order common source amplifying circuit is connected with input matching circuit, the drain terminal of the nmos pass transistor M1 of first order common source amplifying circuit is connected with the source end that the described second level is total to the nmos pass transistor M2 of grid amplifying circuit, simultaneously, the drain terminal of the nmos pass transistor M1 of described first order common source amplifying circuit also is connected with a capacitor C b; The other end of capacitor C b is connected with the grid of the nmos pass transistor M3 of second level common source amplifying circuit, and the second level altogether drain terminal of the drain terminal of the nmos pass transistor M2 of grid amplifying circuit and the nmos pass transistor M3 of second level common source amplifying circuit is connected with separately output loading match circuit respectively.
5, as low-power consumption single-ended input difference output low-noise amplifier as described in the claim 4, it is characterized in that, described control circuit, comprise a capacitor C s and an inductance L ds, the end of described inductance L ds is connected with the drain terminal of the nmos pass transistor M1 of first order common source amplifying circuit, the other end of described inductance L ds links to each other the other end ground connection of capacitor C s with the source electrode of the nmos pass transistor M3 of second level common source amplifying circuit with capacitor C s.
6, as low-power consumption single-ended input difference output low-noise amplifier as described in the claim 3, it is characterized in that, described first order cascade amplifying circuit comprises interconnective nmos pass transistor M1 and nmos pass transistor M4, described second level grid amplifying circuit altogether comprises a nmos pass transistor M2, described second level common source amplifying circuit comprises a nmos pass transistor M3, the grid end of the nmos pass transistor M1 of described first order cascade amplifying circuit is connected with the input noise match circuit, the drain terminal of above-mentioned nmos pass transistor M1 links to each other with the source end of the nmos pass transistor M4 of described first order cascade amplifying circuit, the grid termination bias voltage of the nmos pass transistor M4 of described first order cascade amplifying circuit, the drain terminal of the nmos pass transistor M4 of described first order cascade amplifying circuit is connected with the source end that the described second level is total to the nmos pass transistor M2 of grid amplifying circuit, simultaneously, the drain terminal of the nmos pass transistor M4 of described first order cascade amplifying circuit also is connected with a capacitor C b; The other end of capacitor C b is connected with the grid of the nmos pass transistor M3 of second level common source amplifying circuit, and the second level is total to the nmos pass transistor M2 of grid amplifying circuit and the drain terminal of the nmos pass transistor M3 of second level common source amplifying circuit is connected with the output loading match circuit respectively.
7, as low-power consumption single-ended input difference output low-noise amplifier as described in the claim 6, it is characterized in that, described control circuit comprises a capacitor C s and an inductance L ds, the end of described inductance L ds is connected with the drain terminal of the nmos pass transistor M4 of first order cascade amplifying circuit, the other end of described inductance L ds links to each other the other end ground connection of capacitor C s with the source electrode of the nmos pass transistor M3 of second level common source amplifying circuit with capacitor C s.
8, as low-power consumption single-ended input difference output low-noise amplifier as described in the claim 4-7, it is characterized in that, described input matching circuit comprises a capacitor C 1, an inductance L g and another inductance L s, the grid of the nmos pass transistor M1 of described first order common source amplifying circuit or first order cascade amplifying circuit connects above-mentioned inductance L g and above-mentioned capacitor C 1, the other end of capacitor C 1 links to each other with the source end of inductance L s and above-mentioned nmos pass transistor M1, and the other end of inductance L s is connected with ground.
9, as low-power consumption single-ended input difference output low-noise amplifier as described in the claim 4-7, it is characterized in that, described output loading match circuit comprises a capacitor C d, an inductance L d and a resistance R d, described inductance L d and described resistance R d are connected in series, and inductance L d and resistance R d series circuit are connected in parallel with capacitor C d again.
10, as low-power consumption single-ended input difference output low-noise amplifier as described in the claim 8, it is characterized in that described inductance L g is connected with inductance L 2 with the capacitor C 2 of a parallel connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101049503A CN101282110B (en) | 2008-04-25 | 2008-04-25 | Low-power consumption single-ended input difference output low-noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101049503A CN101282110B (en) | 2008-04-25 | 2008-04-25 | Low-power consumption single-ended input difference output low-noise amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101282110A true CN101282110A (en) | 2008-10-08 |
| CN101282110B CN101282110B (en) | 2010-07-28 |
Family
ID=40014437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101049503A Expired - Fee Related CN101282110B (en) | 2008-04-25 | 2008-04-25 | Low-power consumption single-ended input difference output low-noise amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101282110B (en) |
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807883A (en) * | 2010-04-08 | 2010-08-18 | 复旦大学 | Single-ended input and differential output low-noise amplifier applied in UWB system |
| CN102118179A (en) * | 2011-04-22 | 2011-07-06 | 上海迦美信芯通讯技术有限公司 | RF transceiver circuit system |
| CN102163955A (en) * | 2011-04-18 | 2011-08-24 | 上海信朴臻微电子有限公司 | Low-noise amplifier adopting single-ended input and differential output |
| CN102176657A (en) * | 2011-03-09 | 2011-09-07 | 东南大学 | Positive-feedback-broadband LNA (low noise amplifier) for millimeter wave frequency range |
| CN102176658A (en) * | 2011-03-15 | 2011-09-07 | 清华大学 | Symmetrically-folded MOS (metal oxide semiconductor) transistor cascade amplifier with broadband and low-power consumption |
| CN102340295A (en) * | 2011-05-30 | 2012-02-01 | 东南大学 | Broadband active balun circuit |
| CN102355200A (en) * | 2011-08-01 | 2012-02-15 | 北京航空航天大学 | Single-ended input and differential output parallel dual-frequency low noise amplifier and design method thereof |
| CN102355199A (en) * | 2011-07-25 | 2012-02-15 | 无锡里外半导体科技有限公司 | Low-noise amplifier |
| CN102386856A (en) * | 2010-06-28 | 2012-03-21 | 硅实验室股份有限公司 | LNA circuit for use in a low-cost receiver circuit |
| CN102946230A (en) * | 2012-10-31 | 2013-02-27 | 中国科学技术大学 | Ultra-wide band low-noise single-ended input and differential output amplifier |
| CN101931368B (en) * | 2009-06-25 | 2013-05-01 | 财团法人工业技术研究院 | Low-noise amplifier |
| CN103138682A (en) * | 2011-11-29 | 2013-06-05 | 上海华虹Nec电子有限公司 | Low noise amplifier |
| CN103178850A (en) * | 2013-03-06 | 2013-06-26 | 南京国博电子有限公司 | Circuit structure of 4bit phase quantization analog-to-digital converter |
| CN104660179A (en) * | 2014-12-30 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | Low noise amplifier |
| CN104702229A (en) * | 2013-12-09 | 2015-06-10 | 株式会社东芝 | Single to differential conversion circuit and analog front-end circuit |
| CN105720930A (en) * | 2016-04-14 | 2016-06-29 | 武汉芯泰科技有限公司 | Single-end input and double-end output gain adjustable low noise amplifier |
| CN106533367A (en) * | 2016-10-26 | 2017-03-22 | 天津大学 | High-gain CMOS low-noise amplifier for TD-LTE (Time Division Long Term Evolution) |
| CN106788278A (en) * | 2016-12-01 | 2017-05-31 | 西北工业大学 | KU Band LNAs |
| CN106803746A (en) * | 2016-12-14 | 2017-06-06 | 上海集成电路研发中心有限公司 | A kind of low-noise amplifier |
| CN107888184A (en) * | 2017-11-27 | 2018-04-06 | 上海华力微电子有限公司 | The buffer circuits and sampling hold circuit of single-ended transfer difference circuit and its composition |
| CN107994872A (en) * | 2017-11-07 | 2018-05-04 | 天津大学 | Big Dipper ground receiver high-gain broadband CMOS low-noise amplifiers |
| CN108736837A (en) * | 2018-05-22 | 2018-11-02 | 上海磐启微电子有限公司 | A kind of built-in single ended input slip divides the low-noise amplifier of export structure |
| CN108880481A (en) * | 2017-05-16 | 2018-11-23 | 博通集成电路（上海）股份有限公司 | Low noise amplifier, receiver and method for low noise amplifier |
| CN110995175A (en) * | 2019-12-02 | 2020-04-10 | 广州慧智微电子有限公司 | Amplifier and amplifying method |
| CN110995178A (en) * | 2018-10-02 | 2020-04-10 | 株式会社村田制作所 | Power amplifying circuit and power amplifier |
| CN112511117A (en) * | 2021-02-03 | 2021-03-16 | 深圳市中科蓝讯科技股份有限公司 | Radio frequency amplifying circuit, radio frequency front end receiving circuit and wireless communication equipment |
| CN112803899A (en) * | 2020-12-28 | 2021-05-14 | 东南大学 | Low-noise amplifier adopting noise cancellation and having no on-chip inductor and single-to-double conversion |
| CN114244289A (en) * | 2021-12-13 | 2022-03-25 | 电子科技大学 | High-stability low-noise amplifier based on common-gate transconductance enhancement structure |
| CN114866047A (en) * | 2022-07-07 | 2022-08-05 | 成都嘉纳海威科技有限责任公司 | Bi-Hemt technology-based broadband dual-channel transceiving amplification chip |
| WO2023082939A1 (en) * | 2021-11-01 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Low-noise amplifier of ultra-wideband communication standard, and radio frequency chip |
-
2008
- 2008-04-25 CN CN2008101049503A patent/CN101282110B/en not_active Expired - Fee Related
Cited By (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101931368B (en) * | 2009-06-25 | 2013-05-01 | 财团法人工业技术研究院 | Low-noise amplifier |
| CN101807883A (en) * | 2010-04-08 | 2010-08-18 | 复旦大学 | Single-ended input and differential output low-noise amplifier applied in UWB system |
| CN102386856A (en) * | 2010-06-28 | 2012-03-21 | 硅实验室股份有限公司 | LNA circuit for use in a low-cost receiver circuit |
| CN102386856B (en) * | 2010-06-28 | 2014-08-13 | 硅实验室股份有限公司 | LNA circuit for use in a low-cost receiver circuit |
| CN102176657A (en) * | 2011-03-09 | 2011-09-07 | 东南大学 | Positive-feedback-broadband LNA (low noise amplifier) for millimeter wave frequency range |
| CN102176658A (en) * | 2011-03-15 | 2011-09-07 | 清华大学 | Symmetrically-folded MOS (metal oxide semiconductor) transistor cascade amplifier with broadband and low-power consumption |
| CN102163955A (en) * | 2011-04-18 | 2011-08-24 | 上海信朴臻微电子有限公司 | Low-noise amplifier adopting single-ended input and differential output |
| CN102118179A (en) * | 2011-04-22 | 2011-07-06 | 上海迦美信芯通讯技术有限公司 | RF transceiver circuit system |
| CN102340295A (en) * | 2011-05-30 | 2012-02-01 | 东南大学 | Broadband active balun circuit |
| CN102340295B (en) * | 2011-05-30 | 2014-02-26 | 东南大学 | Broadband active balun circuit |
| CN102355199A (en) * | 2011-07-25 | 2012-02-15 | 无锡里外半导体科技有限公司 | Low-noise amplifier |
| CN102355199B (en) * | 2011-07-25 | 2013-08-07 | 无锡里外半导体科技有限公司 | Low-noise amplifier |
| CN102355200A (en) * | 2011-08-01 | 2012-02-15 | 北京航空航天大学 | Single-ended input and differential output parallel dual-frequency low noise amplifier and design method thereof |
| CN102355200B (en) * | 2011-08-01 | 2014-03-26 | 北京航空航天大学 | Single-ended input and differential output parallel dual-frequency low noise amplifier and design method thereof |
| CN103138682A (en) * | 2011-11-29 | 2013-06-05 | 上海华虹Nec电子有限公司 | Low noise amplifier |
| CN103138682B (en) * | 2011-11-29 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | A kind of low-noise amplifier |
| CN102946230A (en) * | 2012-10-31 | 2013-02-27 | 中国科学技术大学 | Ultra-wide band low-noise single-ended input and differential output amplifier |
| CN102946230B (en) * | 2012-10-31 | 2015-08-12 | 中国科学技术大学 | A kind of ultra broadband single ended input difference output low noise amplifier |
| CN103178850A (en) * | 2013-03-06 | 2013-06-26 | 南京国博电子有限公司 | Circuit structure of 4bit phase quantization analog-to-digital converter |
| CN104702229A (en) * | 2013-12-09 | 2015-06-10 | 株式会社东芝 | Single to differential conversion circuit and analog front-end circuit |
| CN104660179A (en) * | 2014-12-30 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | Low noise amplifier |
| US9800215B2 (en) | 2014-12-30 | 2017-10-24 | Shanghai Huahong Grace Semiconductor Manufacturing Corporation | Low noise amplifier |
| CN105720930A (en) * | 2016-04-14 | 2016-06-29 | 武汉芯泰科技有限公司 | Single-end input and double-end output gain adjustable low noise amplifier |
| CN105720930B (en) * | 2016-04-14 | 2018-05-29 | 武汉芯泰科技有限公司 | A kind of low-noise amplifier of the adjustable gain of single ended input both-end output |
| CN106533367A (en) * | 2016-10-26 | 2017-03-22 | 天津大学 | High-gain CMOS low-noise amplifier for TD-LTE (Time Division Long Term Evolution) |
| CN106788278B (en) * | 2016-12-01 | 2020-12-01 | 西北工业大学 | KU band low noise amplifier |
| CN106788278A (en) * | 2016-12-01 | 2017-05-31 | 西北工业大学 | KU Band LNAs |
| CN106803746A (en) * | 2016-12-14 | 2017-06-06 | 上海集成电路研发中心有限公司 | A kind of low-noise amplifier |
| CN106803746B (en) * | 2016-12-14 | 2020-09-04 | 上海集成电路研发中心有限公司 | Low-noise amplifier |
| CN108880481A (en) * | 2017-05-16 | 2018-11-23 | 博通集成电路（上海）股份有限公司 | Low noise amplifier, receiver and method for low noise amplifier |
| CN107994872A (en) * | 2017-11-07 | 2018-05-04 | 天津大学 | Big Dipper ground receiver high-gain broadband CMOS low-noise amplifiers |
| CN107888184A (en) * | 2017-11-27 | 2018-04-06 | 上海华力微电子有限公司 | The buffer circuits and sampling hold circuit of single-ended transfer difference circuit and its composition |
| CN107888184B (en) * | 2017-11-27 | 2021-08-13 | 上海华力微电子有限公司 | Single-end-to-differential circuit and buffer circuit and sample hold circuit formed by same |
| CN108736837A (en) * | 2018-05-22 | 2018-11-02 | 上海磐启微电子有限公司 | A kind of built-in single ended input slip divides the low-noise amplifier of export structure |
| CN110995178B (en) * | 2018-10-02 | 2023-08-25 | 株式会社村田制作所 | Power amplifying circuit and power amplifier |
| CN110995178A (en) * | 2018-10-02 | 2020-04-10 | 株式会社村田制作所 | Power amplifying circuit and power amplifier |
| CN110995175A (en) * | 2019-12-02 | 2020-04-10 | 广州慧智微电子有限公司 | Amplifier and amplifying method |
| WO2021109660A1 (en) * | 2019-12-02 | 2021-06-10 | 广州慧智微电子有限公司 | Amplifier and amplification method |
| CN112803899A (en) * | 2020-12-28 | 2021-05-14 | 东南大学 | Low-noise amplifier adopting noise cancellation and having no on-chip inductor and single-to-double conversion |
| CN112803899B (en) * | 2020-12-28 | 2023-10-03 | 东南大学 | Noise-cancellation-based on-chip inductance-free single-to-double low-noise amplifier |
| CN112511117A (en) * | 2021-02-03 | 2021-03-16 | 深圳市中科蓝讯科技股份有限公司 | Radio frequency amplifying circuit, radio frequency front end receiving circuit and wireless communication equipment |
| CN112511117B (en) * | 2021-02-03 | 2021-05-14 | 深圳市中科蓝讯科技股份有限公司 | Radio frequency amplifying circuit, radio frequency front end receiving circuit and wireless communication equipment |
| WO2023082939A1 (en) * | 2021-11-01 | 2023-05-19 | 深圳飞骧科技股份有限公司 | Low-noise amplifier of ultra-wideband communication standard, and radio frequency chip |
| CN114244289A (en) * | 2021-12-13 | 2022-03-25 | 电子科技大学 | High-stability low-noise amplifier based on common-gate transconductance enhancement structure |
| CN114866047A (en) * | 2022-07-07 | 2022-08-05 | 成都嘉纳海威科技有限责任公司 | Bi-Hemt technology-based broadband dual-channel transceiving amplification chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101282110B (en) | 2010-07-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101282110B (en) | Low-power consumption single-ended input difference output low-noise amplifier | |
| CN103117711B (en) | Monolithic integrated radio frequency high-gain low-noise amplifier | |
| CN111106804B (en) | Millimeter wave ultra-wideband high-gain low-power-consumption low-noise amplification chip circuit | |
| CN102332868B (en) | Low-power-consumption wideband low-noise amplifier | |
| CN106505955B (en) | A kind of Ku band broadband low-noise amplifier based on CMOS technology | |
| CN101895265A (en) | Full differential CMOS multimode low-noise amplifier | |
| US7884673B2 (en) | Wideband low-noise amplifier | |
| CN102832885B (en) | Low-noise variable-gain mixer | |
| CN101924524B (en) | Differential complementary metal-oxide-semiconductor (CMOS) multi-mode low-noise amplifier with on-chip active Balun | |
| CN103117712B (en) | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier | |
| CN113114116B (en) | Radio frequency low noise amplifier | |
| CN213990604U (en) | Amplifier bias circuit and radio frequency power amplifier | |
| CN103095224A (en) | Complementary metal-oxide-semiconductor transistor (CMOS) broadband low-noise amplifier adopting noise cancellation technology | |
| CN104779919A (en) | Self-biased ultra wideband low-power-consumption low-noise amplifier (LNA) | |
| CN107592081A (en) | A kind of ultra wide band monolithic microwave integrated low-noise amplifier | |
| CN114024512B (en) | Ultra-wideband low noise amplifier of frequency division duplex | |
| CN109525203B (en) | Intermediate frequency amplifier based on GaAs pHEMT process | |
| WO2024125234A1 (en) | Low-noise amplifier and radio frequency receiving module | |
| CN103633947A (en) | Noninductive and high-gain CMOS (Complementary Metal Oxide Semiconductor) broadband low-noise amplifier | |
| US8378744B2 (en) | Multi-mode power amplifier | |
| CN216056945U (en) | Three-path power synthesis radio frequency power amplifier based on transformer matching | |
| CN112865717B (en) | High-gain power amplifier based on self-adaptive linearization technology | |
| CN109743027A (en) | High-linearity low-noise amplifier | |
| CN117713702A (en) | Low-power consumption low-gain variation stability enhanced low-noise amplifier | |
| CN106936399B (en) | A kind of consumption high gain high linearity broadband low-noise amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100728 Termination date: 20140425 |