WO2023070464A1 - 一种发光器件及其制备方法、发光基板及其制备方法 - Google Patents

一种发光器件及其制备方法、发光基板及其制备方法 Download PDF

Info

Publication number
WO2023070464A1
WO2023070464A1 PCT/CN2021/127169 CN2021127169W WO2023070464A1 WO 2023070464 A1 WO2023070464 A1 WO 2023070464A1 CN 2021127169 W CN2021127169 W CN 2021127169W WO 2023070464 A1 WO2023070464 A1 WO 2023070464A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
material layer
substrate
light
emitting device
Prior art date
Application number
PCT/CN2021/127169
Other languages
English (en)
French (fr)
Inventor
赵加伟
马俊杰
熊志军
杨山伟
孙元浩
卢元达
李雪峤
Original Assignee
京东方科技集团股份有限公司
京东方晶芯科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 京东方晶芯科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/920,017 priority Critical patent/US20240213422A1/en
Priority to PCT/CN2021/127169 priority patent/WO2023070464A1/zh
Priority to CN202180003142.1A priority patent/CN116368629A/zh
Publication of WO2023070464A1 publication Critical patent/WO2023070464A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • Embodiments of the present disclosure relate to but are not limited to the field of display technology, and specifically relate to a light emitting device and a manufacturing method thereof, a light emitting substrate and a manufacturing method thereof.
  • LED Light Emitting Diode, light-emitting device
  • LED chips have gradually replaced traditional lighting fixtures such as incandescent lamps and fluorescent lamps in recent years, and are becoming a new generation of lighting market.
  • the mainstream products are also widely used in optoelectronic systems.
  • the mainstream of the Mini-LED display industry in the market is the PCB-based product of the traditional passive drive mode (PM).
  • PM passive drive mode
  • This drive mode achieves different brightness of the module by adjusting the duty cycle.
  • the relative current is relatively large, generally at the milliampere level, and the optical and electrical properties of the LED chip at this time are relatively stable.
  • the brightness is achieved by adjusting the current used.
  • the LEDs of the entire module will remain on constantly, so the current used by the module is low, generally at the microampere level.
  • LEDs are used under microampere-level low current, and the current density is very small, so many problems will occur: such as the large difference in brightness and chromaticity between LEDs under micro-current, which makes it difficult to correct, because the order of magnitude of the bad leakage of the LED chip itself is different from that of the module under low grayscale.
  • the current used is the same, so some LEDs will not light up at low gray levels, causing problems such as uneven lighting of the module.
  • an embodiment of the present disclosure provides a light-emitting device, including a substrate, a light-emitting functional layer disposed on the substrate, and a reflector disposed on the substrate to cover at least part of the light-emitting functional layer.
  • layer, the reflective layer includes a first material layer and a second material layer, the first material layer and the second material layer are stacked along the thickness direction of the substrate, and the first material layer includes an atomic crystal material, the first material layer is located on the side of the second material layer away from the substrate, and the surface of the first material layer on the side away from the second material layer is formed so that the reflective layer is away from the The surface on one side of the substrate.
  • the first material layer includes at least one of aluminum oxide, silicon dioxide, and aluminum nitride.
  • the reflective layer further includes a plurality of third material layers, the number of the second material layers is also multiple, and the third material layer and the second material layer are arranged along the liner.
  • the thickness directions of the bottoms are stacked alternately in sequence.
  • the third material layer includes the same atomic crystal material as the first material layer, and a layer of the second material layer is provided on the surface of the first material layer facing the substrate. .
  • the optical thicknesses of the first material layer, the second material layer and the third material layer are all a quarter of the central reflection wavelength of the reflective layer.
  • the second material layer includes a titania material.
  • the light-emitting functional layer includes a first semiconductor layer, a quantum well layer, a second semiconductor layer, and a conductive layer sequentially disposed on the substrate, and the first semiconductor layer includes a first portion and a second portion. Two parts, the vertical projection of the first part on the substrate overlaps with the vertical projection of the quantum well layer and the second semiconductor layer on the substrate; the second part is on the substrate The vertical projection of the quantum well layer and the second semiconductor layer does not overlap with the vertical projection of the substrate.
  • the first electrode is disposed on a second portion of the first semiconductor layer, and the second electrode is disposed on the second semiconductor layer .
  • the vertical projection of the reflective layer on the substrate overlaps with the vertical projections of the first electrode and the second electrode on the substrate.
  • it further includes a first pad and a second pad, the first pad and the second pad are both arranged on the side of the reflective layer away from the substrate, the The reflective layer is provided with a first via hole and a second via hole, the first pad is connected to the first electrode through the first via hole, and the second pad is connected to the first electrode through the second via hole The second electrode is connected.
  • the light emitting device in a first direction of the light emitting device, has a first length, the first length is L, and the first pad and the second pad are in the Arranged at intervals in the first direction, the distance between the edge of the first pad close to the second pad and the edge of the second pad close to the first pad is D, the The first length L and the distance D satisfy the relational expression: 33%L ⁇ D ⁇ 66%L.
  • the side edge of the first pad away from the second pad is flush with the side edge of the light-emitting functional layer, and the second pad is away from the first pad by a The side edge is flush with the other side edge of the light-emitting functional layer.
  • the light emitting device is a light emitting diode.
  • an embodiment of the present disclosure further provides a light-emitting substrate, including a driving substrate, and the aforementioned light-emitting devices arrayed on the driving substrate.
  • an embodiment of the present disclosure also provides a method for manufacturing a light emitting device, including:
  • a reflective layer is formed on the substrate; the reflective layer covers at least part of the light-emitting functional layer;
  • the reflective layer includes at least a first material layer, the first material layer includes an atomic crystal material, and the reflective layer further includes a second material layer, and the first material layer and the second material layer are along the liner.
  • the bottom thickness direction is stacked, the first material layer is located on the side of the second material layer away from the substrate, and the surface of the first material layer on the side away from the second material layer is formed as the The surface of the reflective layer on the side away from the substrate.
  • forming a reflective layer on the substrate includes:
  • the second material layer of the reflective layer is formed by an atomic layer deposition process.
  • the second material layer includes a titanium dioxide material
  • forming a reflective layer on the substrate includes:
  • the second material layer of the reflective layer is formed by an electron beam evaporation process, wherein, during the deposition of the second material layer, the partial pressure of oxygen is 1 ⁇ 10-2 to 5 ⁇ 10-2.
  • the embodiment of the present disclosure also provides a method for preparing a light-emitting substrate, including:
  • the light emitting device includes a reflective layer
  • Soldering flux remaining on the reflective layer is removed.
  • removing flux remaining on the reflective layer includes:
  • cleaning flux remaining on the reflective layer is removed.
  • FIG. 1 is a schematic structural diagram of a reflective layer in a related art light-emitting device
  • FIG. 2 is a schematic diagram of a first material layer in a related art light-emitting device
  • Fig. 3 is a schematic diagram of donor energy levels of a first material layer in a related art light-emitting device
  • FIG. 4 is a schematic structural diagram of a light emitting device according to an embodiment of the present disclosure.
  • FIG. 5 is a first structural schematic diagram of a reflective layer in a light-emitting device according to an embodiment of the present disclosure
  • FIG. 6 is a second structural schematic diagram of a reflective layer in a light emitting device according to an embodiment of the present disclosure.
  • connection should be interpreted in a broad sense.
  • it may be a fixed connection, or a detachable connection, or an integral connection; it may be a mechanical connection, or an electrical connection; it may be a direct connection, or an indirect connection through an intermediate piece, or an internal communication between two components.
  • Light Emitting Diode LED
  • micro light emitting diodes Micro Light Emitting Diode, Micro LED
  • sub-millimeter light emitting diodes Mini Light Emitting Diode, Mini LED
  • Mini LED/Micro LED displays can be spliced to achieve large-scale display, so they have a good market prospect.
  • the current mainstream is the PCB substrate, and the PM drive method, due to the flatness of the substrate, cannot achieve a small pitch, and the PM drive method adopts adjustment
  • the brightness of the module is adjusted by the space ratio, so the instantaneous brightness is high, the current used by the light-emitting device chip is relatively large, the micro-leakage of the light-emitting device has little effect under this current, and the photoelectric parameters are relatively stable.
  • the active (AM) driving method based on glass is the development direction of future products.
  • the glass substrate can achieve a smaller pitch and a larger PPI, and the AM driver can ensure a better display effect.
  • the AM driver realizes the brightness by controlling the current of a single pixel, so the working state of the module is: the LED keeps on at a lower current (microampere level), so the instantaneous brightness is low, does not flicker, and is more eye-friendly. But under very small current, LED micro-leakage will cause the following problems:
  • the LED chip with a large leakage current will be darker than the normal chip at a slightly higher gray scale that can be lit. It will affect the performance under full gray scale and seriously affect the display effect.
  • one measure taken by the current driver is to increase the basic current used in low gray levels, and use PWM to reduce the duty cycle, but this makes AM
  • the driver loses the original eye protection advantage, and it will compress the number of bits of the driver IC, resulting in inability to correct at lower grayscales.
  • Fig. 1 is a schematic structural diagram of a reflective layer in a related art light emitting device.
  • a light-emitting device generally includes a substrate, a light-emitting functional layer disposed on the substrate, and a reflective layer disposed on the substrate to cover the light-emitting functional layer.
  • the reflective layer 8 generally includes a plurality of material layers 802 and a plurality of material layers 803 that are stacked. A plurality of material layers 802 and a plurality of material layers 803 are arranged alternately.
  • the surface of the reflective layer 8 away from the substrate is the surface of the material layer 802 away from the material layer 803 , that is, the surface exposed to the light emitting device is the surface of the material layer 802 away from the material layer 803 .
  • the material layer 802 is an ionic crystal material
  • the material layer 803 is an atomic crystal material.
  • FIG. 2 is a schematic diagram of a material layer 802 in a related art light emitting device.
  • the material layer 802 is a titanium dioxide material film layer
  • the material layer 803 is a silicon dioxide material film layer as an example.
  • Titanium dioxide is an ionic crystal.
  • the titanium dioxide material film layer is prone to produce non-stoichiometric point defects 804, which are generally oxygen ion vacancy defects on the surface, and some titanium ion vacancy defects located in the bulk.
  • Oxygen ion vacancy defects on the surface of the titanium dioxide material film mainly affect the chemical conductivity of the titanium dioxide material film layer.
  • quasi-free electrons 2e are generated. In order to maintain electrical neutrality, quasi-free electrons 2e transform part of Ti 4+ into Ti 3+ .
  • Fig. 3 is a schematic diagram of donor energy levels of a second material layer in a related art light emitting device.
  • oxygen ions are negative ions, vacancies are generated as donor impurities, and the donor energy levels are shown in Figure 3, where E g is the forbidden band width, E D is the donor energy level, E c is the conduction band energy level, ⁇ E D is the difference between the donor energy level and the conduction band energy level, and E v is the valence band energy level.
  • the second material layer is an n-type semiconductor.
  • Fig. 4 is a schematic structural diagram of a light emitting device according to an embodiment of the present disclosure.
  • an embodiment of the present disclosure provides a light-emitting device.
  • the main structure of the light-emitting device includes a substrate 1, a light-emitting functional layer 2 disposed on the substrate 1, and a light-emitting functional layer 2 disposed on a side far away from the substrate 1.
  • the first electrode 3 and the second electrode 4 on the side, and the reflective layer 5 arranged on the substrate 1 to cover at least part of the light-emitting functional layer 2 .
  • the substrate 1 is used as a substrate of a light emitting device, and a glass substrate may be used.
  • the first electrode 3 and the second electrode 4 serve as contact electrodes of the luminescent functional layer 2 respectively, and the luminescent functional layer 2 is used to emit light under the voltage of the first electrode 3 and the second electrode 4 .
  • the reflective layer 5 is used to reflect part of the light emitted by the light emitting functional layer 2, so as to increase the light extraction efficiency of the light emitting device.
  • the light emitting device may be a light emitting diode.
  • the reflective layer 5 includes at least a first material layer 501 and a second material layer 502.
  • the first material layer 501 and the second material layer 502 are stacked along the thickness direction of the substrate 1.
  • the first material layer 501 Including atomic crystal material the first material layer 501 is located on the side of the second material layer 502 away from the substrate 1, and the surface of the first material layer 501 away from the second material layer 502 is formed as a reflective layer 5 away from the substrate 1- side surface.
  • the atomic crystal material is a crystal material with a three-dimensional network structure formed by covalent bonds between adjacent atoms.
  • the atomic crystal material has good thermal stability, few defects, is not easy to dissolve in any solvent, and has very stable chemical properties. poor conductor.
  • the atomic crystal material can be stable at high temperature, and the defect concentration can be kept stable under reducing atmosphere.
  • the light-emitting device forms the surface of the first material layer as the surface of the reflective layer, and utilizes atomic crystal materials in the first material layer to solve the leakage problem of the reflective layer 5 caused by crystal defects, and improve the brightness and color of the light-emitting device under low current conditions.
  • the difference in brightness can solve the problem of uneven lighting of low-grey light-emitting devices.
  • the first material layer 501 may include various atomic crystal materials.
  • the first material layer 501 may include at least one of aluminum oxide, silicon dioxide, and aluminum nitride.
  • FIG. 5 is a first structural schematic diagram of a reflective layer in a light emitting device according to an embodiment of the present disclosure.
  • the reflective layer 5 further includes a plurality of third material layers 503 , and the third material layers 503 include atomic crystal materials.
  • the third material layers 503 include atomic crystal materials.
  • the numbers of the second material layer 502 and the third material layer 503 may be different.
  • the reflective layer 5 includes n second material layers 502, n-1 third material layers 503 and one first material layer 501, n second material layers 502 and n-1 third material layers stacked.
  • the layers 503 are arranged alternately, that is, the first second material layer 502 is arranged on the substrate 1, the first third material layer 503 is arranged on the first second material layer 502, and the second second material layer 502 is arranged On the first third material layer 503, the second third material layer 503 is disposed on the second second material layer 502, and so on.
  • the first material layer 501 is disposed on the side of the nth second material layer 502 away from the substrate 1 .
  • the surface of the first material layer 501 away from the second material layer 502 is formed as the surface of the reflective layer 5 away from the substrate 1 .
  • the first material layer 501 includes an atomic crystal material, which can solve the leakage problem of the reflective layer 5 caused by crystal defects.
  • the numbers of the second material layer 502 and the third material layer 503 may be the same.
  • the reflective layer includes n second material layers, n third material layers and one first material layer which are stacked, and n is an integer.
  • n second material layers and n third material layers are arranged alternately, that is, the first second material layer is arranged on the substrate, the first third material layer is arranged on the first second material layer, and the second A second material layer is disposed on the first third material layer, a second third material layer is disposed on the second second material layer, and so on.
  • the first material layer is disposed on a side of the nth third material layer away from the substrate.
  • the surface of the first material layer on the side away from the second material layer is formed as the surface of the reflective layer on the side away from the substrate.
  • the first material layer includes atomic crystal material, and the atomic crystal material can solve the leakage problem of the reflective layer caused by crystal defects.
  • FIG. 6 is a second structural schematic diagram of a reflective layer in a light emitting device according to an embodiment of the present disclosure.
  • the third material layer 503 includes the same atomic crystal material as the first material layer 501 , and a second material layer 502 is disposed on the surface of the first material layer 501 facing the substrate 1 .
  • the reflective layer 5 includes n second material layers 502, n-1 third material layers 503 and one first material layer 501, n second material layers 502 and n-1 third material layers stacked.
  • the layers 503 are arranged alternately, that is, the first second material layer 502 is arranged on the substrate 1, the first third material layer 503 is arranged on the first second material layer 502, and the second second material layer 502 is arranged On the first third material layer 503, the second third material layer 503 is disposed on the second second material layer 502, and so on.
  • the first material layer 501 is disposed on the side of the nth second material layer 502 away from the substrate 1 .
  • the surface of the first material layer 501 away from the second material layer 502 is formed as the surface of the reflective layer 5 away from the substrate 1 .
  • the third material layer 503 and the first material layer 501 include the same atomic crystal material, and the atomic crystal material can solve the leakage problem of the reflection layer 5 caused by crystal defects.
  • both the first material layer 501 and the third material layer 503 include silicon dioxide material
  • the second material layer 502 includes titanium dioxide material.
  • Silicon dioxide is an atomic crystal, and the adjacent silicon atoms and oxygen atoms in the silicon dioxide are covalently bonded to form a three-dimensional network structure, and the silicon dioxide structure is relatively stable. Compared with ionically bonded titanium dioxide, there are fewer defects and the resulting leakage current is much smaller.
  • the reverse leakage current (IR) was tested, wherein both the light-emitting device chip with a size of 0306 and the mini light-emitting device chip with a size of 0408 include the The light emitting device of the embodiment of the present disclosure and the light emitting device of the related art shown in FIG. 1 .
  • the test results are shown in Table 1. According to Table 1, it can be seen that the reverse leakage current of the light-emitting device of the embodiment of the present disclosure is significantly different from that of the light-emitting device of the related art.
  • the sample whose outermost layer in the reflective layer is SiO2 is compared with the sample whose outermost layer in the reflective layer is TiO2 . Leakage is small.
  • the outermost film layer in the reflective layer refers to the film layer on the side farthest from the substrate in the reflective layer along the thickness direction of the substrate.
  • the first material layer is the outermost film layer in the reflective layer.
  • the light-emitting device chip whose outermost film layer in the reflective layer is TiO 2 does not light up uniformly, while the light-emitting device chip whose outermost film layer in the reflective layer is SiO 2 has a better light-up effect.
  • the light-emitting device chip whose outermost film layer in the reflective layer is SiO 2 has better uniformity of brightness change at medium and high gray scales than the light-emitting device chip whose outermost film layer in the reflective layer is TiO 2 .
  • the brightness difference is 11.8% at 255 grayscale, and the difference reaches 24% at 50 grayscale, showing an amplified trend, which will give the system correction It caused great difficulties, and the final mod display effect cannot be guaranteed.
  • the difference in luminance at the four highest gray scales is all within 1%, indicating that the uniformity between modules is better at the middle and high gray scales.
  • the optical thicknesses of the first material layer 501 , the second material layer 502 and the third material layer 503 are all a quarter of the central reflection wavelength of the reflective layer 5 to increase light reflection efficiency.
  • the light emitting functional layer 2 includes a first semiconductor layer 21 , a quantum well layer 22 , a second semiconductor layer 23 and a conductive layer 24 sequentially disposed on a substrate 1 .
  • the first semiconductor layer 21 as an electron injection layer is arranged on the substrate 1
  • the quantum well layer 22 as a light-exiting layer is arranged on the first semiconductor layer 21
  • the second semiconductor layer 23 as a hole injection layer is arranged on the quantum well layer.
  • the well layer 22 is used to provide carrier holes; the conductive layer 24 is disposed on the second semiconductor layer 23 .
  • the first semiconductor layer 21 includes a first portion 211 and a second portion 212, the vertical projection of the first portion 211 on the substrate 1, and the quantum well layer 22 and the second semiconductor layer 23
  • the vertical projection of the substrate 1 overlaps; the vertical projection of the second part 212 on the substrate 1 does not overlap with the vertical projection of the quantum well layer 22 and the second semiconductor layer 23 on the substrate 1; the second semiconductor layer 23
  • the surface of the first semiconductor layer 21 forms a high-step surface, and the surface of the second portion 212 of the first semiconductor layer 21 forms a bottom-step surface.
  • the first electrode 3 is disposed on the bottom stepped surface of the second portion 212 in the first semiconductor layer 21
  • the second electrode 4 is disposed on the high stepped surface of the second semiconductor layer 23 .
  • the reflective layer 5 covers the luminescent functional layer 2 , the first electrode 3 and the second electrode 4 , that is, the vertical projection of the reflective layer 5 on the substrate 1 , and the luminescent functional layer 2 , The vertical projections of the first electrode 3 and the second electrode 4 on the substrate 1 overlap.
  • the main structure of the light emitting device further includes a first bonding pad 6 and a second bonding pad 7 , and the first bonding pad 6 and the second bonding pad 7 are both arranged on the reflective layer 5 away from one side of the substrate 1.
  • the reflective layer 5 is provided with a first via hole and a second via hole, the first via hole extends to the first electrode 3 , and the second via hole extends to the second electrode 4 .
  • the first pad 6 is connected to the first electrode 3 through the first via hole, and the second pad 7 is connected to the second electrode 4 through the second via hole.
  • the light emitting device in the first direction of the light emitting device, has a first length, the first length is L, and the first length is in the first direction, the substrate 1 in the light emitting device The length from one side edge to the other side edge of the substrate 1.
  • the first pads 6 and the second pads 7 are arranged at intervals in the first direction.
  • the distance between the edge of the first pad 6 close to the second pad 7 and the edge of the second pad 7 close to the first pad 6 is D
  • the first length L is the same as the first length L.
  • the distance D between the edge of a pad 6 close to the second pad 7 and the edge of the second pad 7 close to the first pad 6 satisfies the relationship: 33%L ⁇ D ⁇ 66%L.
  • the distance L between the edge of the first pad 6 close to the second pad 7 and the edge of the second pad 7 close to the first pad 6 is 26% to 32% of the first length of the light emitting device.
  • the light emitting device in the embodiment of the present disclosure reduces the leakage current of the light emitting device by increasing the distance L between the edge of the first pad 6 and the edge of the second pad 7 .
  • different distances L between the edge of the first pad 6 and the edge of the second pad 7 show different leakage levels.
  • the distance L between the edge of the first pad 6 and the second pad 7 7 The larger the distance L between the edges, the smaller the leakage current.
  • the film layer between the first pad 6 and the second pad 7 can be understood as a resistance, and the distance L between the edge of the first pad 6 and the edge of the second pad 7 is used as the resistance length.
  • R ⁇ L/S
  • the resistance is proportional to the length of the resistance, the greater the distance L between the edge of the first pad 6 and the edge of the second pad 7, the greater the resistance and the smaller the leakage current.
  • the distance L between the edge of the first pad 6 and the edge of the second pad 7 should not be too large, otherwise the thrust effect will be poor.
  • the edge of the first pad away from the second pad is flush with the edge of one side of the light-emitting functional layer, and the edge of the second pad away from the first pad is aligned with the edge of the other side of the light-emitting functional layer. so as to increase the distance L between the edge of the first pad close to the second pad and the edge of the second pad close to the first pad, and reduce the leakage current of the light emitting device.
  • the substrate 1 of the light-emitting device is placed upwards, and the first pad 6 and the second pad 7 located on the side of the light-emitting device away from the substrate 1 are respectively soldered to the positive and negative electrodes of the driving substrate.
  • the positive and negative electrodes on the driving substrate inject current into the light-emitting device, drive the first semiconductor layer 21 and the second semiconductor layer 23 to inject electrons and holes into the quantum well layer 22 for composite light emission, and the quantum well layer 22 emits light.
  • the light rays are emitted through the substrate 1.
  • An embodiment of the present disclosure also provides a light-emitting substrate, including a driving substrate, and any one of the above-mentioned light-emitting devices arrayed on the driving substrate.
  • An embodiment of the present disclosure also provides a method for manufacturing a light-emitting device, including:
  • a reflective layer is formed on the substrate; the reflective layer covers at least part of the light-emitting functional layer;
  • the reflective layer includes at least a first material layer, the first material layer includes an atomic crystal material, and the reflective layer further includes a second material layer, and the first material layer and the second material layer are along the liner.
  • the bottom thickness direction is stacked, the first material layer is located on the side of the second material layer away from the substrate, and the surface of the first material layer on the side away from the second material layer is formed as the The surface of the reflective layer on the side away from the substrate.
  • forming a reflective layer on the substrate includes:
  • the second material layer of the reflective layer is formed by an atomic layer deposition process.
  • the second material layer may include titanium dioxide material.
  • Forming the second material layer by atomic layer deposition can reduce defects of the second material layer and improve crystal quality.
  • taking the second material layer may include titanium dioxide material as an example, titanium dioxide material is generally an oxygen defect, and defects will be generated by electron beam evaporation, especially the high temperature in the manufacturing process will significantly affect the concentration of oxygen ion defects. Oxygen ions in the grid will escape into the atmosphere, causing oxygen vacancies to appear in the crystal, and controlling the oxygen vacancies within a certain level can effectively control the micro-leakage of the light-emitting device.
  • Atomic layer deposition is a method that can coat a substance layer by layer on the surface of a substrate in the form of a monoatomic film. The deposited layer has an extremely uniform thickness and excellent consistency, and the quality of the deposited crystal is good. Therefore, the oxygen defect density can be effectively reduced, thereby improving the electric leakage of the light emitting device.
  • the second material layer may include a titanium dioxide material, and forming a reflective layer on the substrate includes:
  • the second material layer of the reflective layer is formed by an electron beam evaporation process, wherein, during the deposition of the second material layer, the partial pressure of oxygen is 1 ⁇ 10 ⁇ 2 to 5 ⁇ 10 ⁇ 2 .
  • the partial pressure of oxygen may be 2*10 ⁇ 2 Pa. If the oxygen partial pressure is too small, O vacancies will increase, and if the oxygen partial pressure is too high, the film layer will be loose.
  • the optimal partial pressure needs to match other process conditions, so the optimal partial pressure condition needs to be determined according to the actual situation.
  • the second material layer may include titanium dioxide material as an example.
  • the oxygen partial pressure during the deposition of the second material layer is increased.
  • oxygen vacancies cannot be avoided, and the equilibrium constant of the overall reaction is: in, vacant for O, is the oxygen concentration in the environment, therefore, we can get Change the form of the formula That is, in titanium dioxide crystals, the 6th power of the oxygen vacancy concentration is inversely proportional to the oxygen pressure in the ambient atmosphere. It can be seen that the non-stoichiometric, that is, the concentration of oxygen vacancies in titanium dioxide is quite sensitive to the oxygen concentration in the ambient atmosphere. Therefore, Increasing the partial pressure of oxygen in the manufacturing process can effectively reduce the oxygen defects in the titanium dioxide crystal, thereby improving the leakage of light-emitting devices.
  • Embodiments of the present disclosure also provide a method for preparing a light-emitting substrate, including:
  • Soldering flux remaining on the reflective layer is removed.
  • removing flux remaining on the reflective layer includes:
  • cleaning flux remaining on the reflective layer is removed.
  • the inventors of the present disclosure found that when the first welding pad and the second welding pad are welded to the driving substrate through flux, there will be some active agents in the flux, mainly some carboxylic acids. Flux can cause defects on the surface of the reflective layer close to the driving substrate.
  • the surface of the reflective layer near the driving substrate is made of ion crystal material.
  • the ionic crystal material Take the ionic crystal material as TiO2 as an example.
  • the O in the organic carboxylic acid can be adsorbed with the oxygen vacancies on the surface of TiO2 on the five-coordinated Ti atom on the surface, that is, to fill the O vacancies on the surface, and the H in the organic carboxylic acid can form hydrogen bonds with the O on the surface of TiO2 , Therefore, TiO2 has relatively strong adsorption for water and some organic matter.
  • the acid adsorbed on the surface can induce the O vacancies on the subsurface to migrate to the surface.
  • the flux remaining on the reflective layer is removed at a temperature of 60-180°C.
  • the active substance in the flux is organic acid.
  • the volatilization temperature and decomposition temperature of organic acid are generally low. High temperature can effectively volatilize the residual flux. Therefore, high temperature baking after soldering can improve the problem of low ash lighting.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

一种发光器件及其制备方法、发光基板及其制备方法，发光器件包括衬底、设置在所述衬底上的发光功能层，以及设置在所述衬底上将至少部分所述发光功能层覆盖的反射层，所述反射层包括第一材料层和第二材料层，所述第一材料层与所述第二材料层沿所述衬底厚度方向叠层设置，所述第一材料层包括原子晶体材料，所述第一材料层位于所述第二材料层远离所述衬底的一侧，所述第一材料层远离所述第二材料层的一侧的表面形成为所述反射层远离所述衬底一侧的表面。

Description

一种发光器件及其制备方法、发光基板及其制备方法 技术领域
本公开实施例涉及但不限于显示技术领域，具体涉及一种发光器件及其制备方法、发光基板及其制备方法。
背景技术
LED(Light Emitting Diode，发光器件)是一种能发光的半导体器件。通过采用不同的半导体材料和结构，由于LED芯片具有结构简单、体积小、节能、高效、长寿、光线清晰等优点，近年来已逐渐取代白炽灯、荧光灯等传统照明灯具，正成为新一代照明市场的主流产品，在光电***中的应用也极为普遍。
目前市场上Mini-LED显示行业主流的为传统被动式驱动方式(PM)的PCB基产品，这种驱动方式通过调整占空比的方式来实现模组的不同亮度，模组瞬时亮度较高，使用相对电流较大，一般在毫安级别，此时的LED芯片光学，电学性质相对较稳定。
在一些Mini-LED基于主动式驱动方式(AM)的玻璃基产品，是通过调整使用电流来实现亮度的高低。整个模组的LED会保持常亮状态，因此模组的使用电流较低，一般在微安级别。相较于PM驱动小一至三个数量级。LED在微安级小电流下使用，电流密度很小，会出现很多问题：如微电流下LED间亮度色度差异大造成校正困难，由于LED芯片本身不良漏电的数量级与模组低灰阶下使用电流相当，故低灰阶下会有部分LED不起亮，造成模组起亮不均匀等问题。
发明内容
以下是对本公开详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
第一方面，本公开实施例提供了一种发光器件，包括衬底、设置在所述衬底上的发光功能层，以及设置在所述衬底上将至少部分所述发光功能层覆盖的反射层，所述反射层包括第一材料层和第二材料层，所述第一材料层与所述第二材料层沿所述衬底厚度方向叠层设置，所述第一材料层包括原子晶体材料，所述第一材料层位于所述第二材料层远离所述衬底的一侧，所述第一材料层远离所述第二材料层的一侧的表面形成为所述反射层远离所述衬底一侧的表面。
在示例性实施方式中，所述第一材料层包括氧化铝、二氧化硅以及氮化铝中的至少一种。
在示例性实施方式中，所述反射层还包括多个第三材料层，所述第二材料层的数目也为多个，所述第三材料层与所述第二材料层沿所述衬底的厚度方向依次交替叠置。
在示例性实施方式中，所述第三材料层与所述第一材料层包括相同的原子晶体材料，所述第一材料层朝向所述衬底的表面设置了一层所述第二材料层。
在示例性实施方式中，所述第一材料层、所述第二材料层以及所述第三材料层的光学厚度均为所述反射层的中心反射波长的四分之一。
在示例性实施方式中，所述第二材料层包括二氧化钛材料。
在示例性实施方式中，所述发光功能层包括在所述衬底上依次设置的第一半导体层、量子阱层、第二半导体层以及导电层，所述第一半导体层包括第一部分以及第二部分，所述第一部分在所述衬底的垂直投影，与所述量子阱层和所述第二半导体层在所述衬底的垂直投影交叠；所述第二部分在所述衬底的垂直投影，与所述量子阱层和所述第二半导体层在所述衬底的垂直投影不交叠。
在示例性实施方式中，还包括第一电极和第二电极，所述第一电极设置在所述第一半导体层中第二部分上，所述第二电极设置在所述第二半导体层上。
在示例性实施方式中，所述反射层在所述衬底的垂直投影，与所述第一 电极以及所述第二电极在所述衬底的垂直投影交叠。
在示例性实施方式中，还包括第一焊盘和第二焊盘，所述第一焊盘和所述第二焊盘均设置在所述反射层远离所述衬底的一侧，所述反射层中设置有第一过孔和第二过孔，所述第一焊盘通过所述第一过孔与所述第一电极连接，所述第二焊盘通过所述第二过孔与所述第二电极连接。
在示例性实施方式中，在所述发光器件的第一方向，所述发光器件具有第一长度，所述第一长度为L，所述第一焊盘与所述第二焊盘在所述第一方向上间隔排布，所述第一焊盘靠近所述第二焊盘一侧边缘与所述第二焊盘靠近所述第一焊盘一侧边缘之间的距离为D，所述第一长度L与所述距离D满足关系式：33％L≤D≤66％L。
在示例性实施方式中，所述第一焊盘远离所述第二焊盘一侧边缘与所述发光功能层的一侧边缘平齐，所述第二焊盘远离所述第一焊盘一侧边缘与所述发光功能层的另一侧边缘平齐。
在示例性实施方式中，所述发光器件为发光二极管。
第二方面，本公开实施例还提供了一种发光基板，包括驱动基板，以及阵列设置于所述驱动基板上前述的发光器件。
第三方面，本公开实施例还提供了一种发光器件的制备方法，包括：
在衬底上形成发光功能层；
在所述衬底上形成反射层；所述反射层覆盖至少部分所述发光功能层；
其中，所述反射层至少包括第一材料层，所述第一材料层包括原子晶体材料，反射层还包括第二材料层，所述第一材料层与所述第二材料层沿所述衬底厚度方向叠层设置，所述第一材料层位于所述第二材料层远离所述衬底的一侧，所述第一材料层远离所述第二材料层的一侧的表面形成为所述反射层远离所述衬底一侧的表面。
在示例性实施方式中，在所述衬底上形成反射层包括：
通过原子层沉积工艺形成所述反射层的第二材料层。
在示例性实施方式中，所述第二材料层包括二氧化钛材料，在所述衬底 上形成反射层包括：
通过电子束蒸镀工艺形成所述反射层的第二材料层，其中，在沉积第二材料层过程中，氧气的分压为1×10-2至5×10-2。
第四方面，本公开实施例还提供了一种发光基板的制备方法，包括：
形成发光器件，其中，所述发光器件包括反射层；
在所述发光器件的反射层上形成第一焊盘和第二焊盘；
通过助焊剂，将第一焊盘和第二焊盘分别与驱动基板焊接；
去除残留在所述反射层上的助焊剂。
在示例性实施方式中，去除残留在所述反射层上的助焊剂包括：
在60-180℃温度下，去除残留在所述反射层上的助焊剂；
或者，清洗去除残留在所述反射层上的助焊剂。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图说明
图1为相关技术发光器件中反射层的结构示意图；
图2为相关技术发光器件中第一材料层的示意图；
图3为相关技术发光器件中第一材料层的施主能级示意图；
图4为本公开实施例发光器件的结构示意图；
图5为本公开实施例发光器件中反射层的结构示意图一；
图6为本公开实施例发光器件中反射层的结构示意图二。
具体实施方式
下文中将结合附图对本公开的实施例进行详细说明。注意，实施方式可以以多个不同形式来实施。所属技术领域的普通技术人员可以很容易地理解一个事实，就是方式和内容可以在不脱离本公开的宗旨及其范围的条件下被变换为各种各样的形式。因此，本公开不应该被解释为仅限定在下面的实施 方式所记载的内容中。在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互任意组合。
在本说明书中，为了方便起见，使用“中部”、“上”、“下”、“前”、“后”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示方位或位置关系的词句以参照附图说明构成要素的位置关系，仅是为了便于描述本说明书和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。构成要素的位置关系根据描述各构成要素的方向适当地改变。因此，不局限于在说明书中说明的词句，根据情况可以适当地更换。
在本说明书中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解。例如，可以是固定连接，或可拆卸连接，或一体地连接；可以是机械连接，或电连接；可以是直接相连，或通过中间件间接相连，或两个元件内部的连通。对于本领域的普通技术人员而言，可以根据情况理解上述术语在本公开中的含义。
本公开中的“约”，是指不严格限定界限，允许工艺和测量误差范围内的数值。
发光二极管(Light Emitting Diode，LED)的制作尺寸具有越来越小型化的趋势，例如，微型发光二极管(Micro Light Emitting Diode，Micro LED)或次毫米发光二极管(Mini Light Emitting Diode，Mini LED)，Mini LED/Micro LED显示屏可以通过拼接方式实现大尺寸显示，所以，它们具有较好的市场前景。
经过本公开发明人的研究发现，传统的mini/Micro LED背光或者显示产品，当前主流的为PCB基板，PM驱动方式，由于基板平整度的问题，无法做到很小pitch，PM驱动方式采用调整占空间比的方式来调节模组亮度，因此瞬时亮度较高，发光器件芯片使用电流相对较大，发光器件微漏电在此电流下影响不大，光电参数较为稳定。但后续随着对显示效果，PPI，健康角度的要求越来越高，基于玻璃基的主动式(AM)驱动方式才是未来产品的发展方向。玻璃基可以实现更小的pitch，更大的PPI，AM驱动则可以保证更优的显示效果。AM驱动通过控制单个像素的电流大小来实现亮度高低，因此模组工作状态为：LED在较低电流(微安级别)下保持常亮，因此瞬时亮 度低，不闪烁，更护眼。但在很小电流下，LED微漏电会造成如下问题：
1.LED本身存在缺陷，电流通过LED芯片时候，一些由缺陷引起的漏电通道会开启，在较小电流下，单位时间内流过的电子数量相对较少，会存在电子全部从漏电通道通过的情况，此时没有可用于辐射复合的载流子，芯片不发光，外观表现为低电流下，有些芯片不起亮，整个模组上表现为起亮不均匀。
2.由于LED本身存在缺陷导致的漏电通道，故在稍高可以起亮的灰阶下，漏电较大的LED芯片会较正常芯片更暗，低灰阶下表现严重的亮暗不均，甚至会影响全灰阶下表现，严重影响显示效果。
3.为了模组上避免当前出现的低灰阶下起亮不均问题，当前驱动采取的一个措施为抬高低灰阶下使用的基础电流，采用PWM方式调小占空比，但这样使得AM驱动丧失了原有的护眼优势，且会压缩驱动IC的比特数，导致较低灰阶下无法校正。
图1为相关技术发光器件中反射层的结构示意图。发光器件一般包括衬底、设置于衬底上的发光功能层以及设置于衬底上将发光功能层覆盖的反射层。如图1所示，反射层8一般包括层叠设置的多个材料层802以及多个材料层803。多个材料层802以及多个材料层803交替设置。反射层8远离衬底一侧的表面为材料层802远离材料层803的一侧的表面，即裸露于发光器件的表面为材料层802远离材料层803一侧的表面。其中，材料层802为离子晶体材料，材料层803为原子晶体材料。
图2为相关技术发光器件中材料层802的示意图。如图2所示，以材料层802为二氧化钛材料膜层，材料层803为二氧化硅材料膜层为例。二氧化钛为离子晶体。二氧化钛材料膜层容易产生非化学计量的点缺陷804，一般为在表面氧离子空位缺陷，也有一部分位于***的钛离子空位缺陷。主要影响二氧化钛材料膜层化学导电性质的为二氧化钛材料膜层表面的氧离子空位缺陷。二氧化钛材料膜层表面的氧离子变成氧分子逃逸后，产生准自由电子2e。为了保持电中性，准自由电子2e使部分Ti 4+转变为Ti 3+。
图3为相关技术发光器件中第二材料层的施主能级示意图。如图3所示，氧离子是负离子，空位产生为施主杂质，施主能级如图3所示，其中，E g为 禁带宽度，E D为施主能级，E c为导带能级，ΔE D为施主能级与导带能级之差，E v为价带能级。当施主杂质电离时，电子得到ΔE D后，在施主上被束缚的准自由电子2e从施主能级跃迁到导带底部，导带中电子数量增多，因为主要依靠导带中电子导电，此时的第二材料层为n型半导体。
发明人经实验发现，稍微减少第二材料层中的氧离子含量，对第二材料层的电导率会有特殊的影响，按化学组成的二氧化钛(TiO 2)电导率<10-10s/cm，而TiO 1.9995的电导率只有10-1s/cm。因此第二材料层的上述缺陷，会导致发光器件的微漏电，影响发光器件的性能。
图4为本公开实施例发光器件的结构示意图。如图4所示，本公开实施例提供了一种发光器件，发光器件的主体结构包括衬底1，设置在衬底1上的发光功能层2，设置在发光功能层2远离衬底1一侧的第一电极3和第二电极4，以及设置在衬底1上将至少部分发光功能层2覆盖的反射层5。其中，衬底1作为发光器件的基板，可以采用玻璃基板。第一电极3和第二电极4分别作为发光功能层2的接触电极，发光功能层2用于在第一电极3和第二电极4电压作用下发光。反射层5用于将发光功能层2发出的部分光线反射，以增大发光器件的出光效率。其中，发光器件可以为发光二极管。
在示例性实施方式中，反射层5至少包括第一材料层501和第二材料层502，第一材料层501与第二材料层502沿衬底1厚度方向叠层设置，第一材料层501包括原子晶体材料，第一材料层501位于第二材料层502远离衬底1的一侧，第一材料层501远离第二材料层502的一侧的表面形成为反射层5远离衬底1一侧的表面。原子晶体材料为相邻原子间以共价键相结合形成的具有空间立体网状结构的晶体材料，原子晶体材料热稳定性好，缺陷少，不易溶于任何溶剂，化学性质十分稳定，是电不良导体。原子晶体材料能够在高温下稳定，且在还原气氛下保证缺陷浓度稳定。本公开实施例发光器件通过将第一材料层的表面形成反射层的表面，利用第一材料层采用原子晶体材料，解决反射层5由于晶体缺陷造成的漏电问题，改善低电流下发光器件亮度色度差异，解决发光器件低灰起亮不均的问题。
在示例性实施方式中，第一材料层501可以包括多种原子晶体材料。例如，第一材料层501可以包括氧化铝、二氧化硅以及氮化铝中的至少一种。
图5为本公开实施例发光器件中反射层的结构示意图一。如图5所示，反射层5还包括多个第三材料层503，第三材料层503包括原子晶体材料。第二材料层502的数目也为多个，第三材料层503与第二材料层502沿衬底1的厚度方向依次交替叠置。
在示例性实施方式中，如图5所示，第二材料层502和第三材料层503的数量可以不相同。具体地，反射层5包括层叠设置的n个第二材料层502、n-1个第三材料层503以及一个第一材料层501，n个第二材料层502以及n-1个第三材料层503交替设置，即第一个第二材料层502设置在衬底1上，第一个第三材料层503设置在第一个第二材料层502上，第二个第二材料层502设置在第一个第三材料层503上，第二个第三材料层503设置在第二个第二材料层502上，以此类推。第一材料层501设置在第n个第二材料层502远离衬底1一侧。第一材料层501远离第二材料层502的一侧的表面形成为反射层5远离衬底1一侧的表面。第一材料层501包括原子晶体材料，原子晶体材料能够解决反射层5由于晶体缺陷造成的漏电问题。
在一些实施方式中，第二材料层502和第三材料层503的数量可以相同。具体地，反射层包括层叠设置的n个第二材料层、n个第三材料层以及一个第一材料层，n为整数。n个第二材料层以及n个第三材料层交替设置，即第一个第二材料层设置在衬底上，第一个第三材料层设置在第一个第二材料层上，第二个第二材料层设置在第一个第三材料层上，第二个第三材料层设置在第二个第二材料层上，以此类推。第一材料层设置在第n个第三材料层远离衬底一侧。第一材料层远离第二材料层的一侧的表面形成为反射层远离衬底一侧的表面。第一材料层包括原子晶体材料，原子晶体材料能够解决反射层由于晶体缺陷造成的漏电问题。
图6为本公开实施例发光器件中反射层的结构示意图二。如图6所示，第三材料层503与第一材料层501包括相同的原子晶体材料，第一材料层501朝向衬底1的表面设置了一层第二材料层502。具体地，反射层5包括层叠设置的n个第二材料层502、n-1个第三材料层503以及一个第一材料层501，n个第二材料层502以及n-1个第三材料层503交替设置，即第一个第二材料层502设置在衬底1上，第一个第三材料层503设置在第一个第二材料层 502上，第二个第二材料层502设置在第一个第三材料层503上，第二个第三材料层503设置在第二个第二材料层502上，以此类推。第一材料层501设置在第n个第二材料层502远离衬底1一侧。第一材料层501远离第二材料层502的一侧的表面形成为反射层5远离衬底1一侧的表面。第三材料层503与第一材料层501包括相同的原子晶体材料，原子晶体材料能够解决反射层5由于晶体缺陷造成的漏电问题。示例的，第一材料层501和第三材料层503均包括二氧化硅材料，第二材料层502包括二氧化钛材料。二氧化硅为原子晶体，二氧化硅中相邻硅原子和氧原子以共价键相结合形成的具有空间立体网状结构，二氧化硅结构相对稳定。同离子键连接的二氧化钛相比，缺陷要少，由此产生的漏电流也要小得多。
分别将尺寸为0306与0408的mini发光器件芯片封装模拟后，测试反向漏电流(IR)，其中，尺寸为0306的发光器件芯片和尺寸为0408的mini发光器件芯片均包括图5所示的本公开实施例发光器件以及图1所示相关技术发光器件。测试结果如表1所示。根据表1可知，本公开实施例发光器件与相关技术发光器件的反向漏电流有明显差异，图1所示相关技术发光器件漏电较大，对应表现在模组上即为低电流下不亮。
表1测试发光器件芯片反向漏电流结果
Figure PCTCN2021127169-appb-000001
另外，在发光器件芯片的简化模型中，相同电测间隔情况下，反射层中最外层的膜层为SiO 2的样品与反射层中最外层的膜层为TiO 2的样品相比，漏电小。其中，反射层中最外层的膜层是指沿衬底厚度方向，在反射层中最 远离衬底一侧的膜层。比如，在图5所示的本公开实施例发光器件中，第一材料层为反射层中最外层的膜层。
在1bit下，反射层中最外层的膜层为TiO 2的发光器件芯片起亮不均匀，而反射层中最外层的膜层为SiO 2的发光器件芯片则起亮效果较好。另外，反射层中最外层的膜层为SiO 2的发光器件芯片，在中高灰阶下的亮度变化均一性也要优于反射层中最外层的膜层为TiO 2的发光器件芯片。例如，反射层中最外层的膜层为TiO 2的发光器件芯片，在255灰阶下亮度差异为11.8％，到50灰阶下差异达到了24％，呈放大趋势，这会给***校正造成极大困难，且无法保证最终模组显示效果。而在反射层中最外层的膜层为SiO 2的发光器件芯片中，高四个灰阶下亮度差异均在1％以内，说明中高灰阶下模组间的均一性较好。
在示例性实施方式中，第一材料层501、第二材料层502以及第三材料层503的光学厚度均为反射层5的中心反射波长的四分之一，以增加光线的反射效率。
在示例性实施方式中，如图4所示，发光功能层2包括在衬底1上依次设置的第一半导体层21、量子阱层22、第二半导体层23以及导电层24。其中，作为电子注入层的第一半导体层21设置在衬底1上，作为出光层的量子阱层22设置在第一半导体层21上，作为空穴注入层的第二半导体层23设置在量子阱层22上，用于提供载流子空穴；导电层24设置在第二半导体层23上。
在示例性实施方式中，如图4所示，第一半导体层21包括第一部分211以及第二部分212，第一部分211在衬底1的垂直投影，与量子阱层22和第二半导体层23在衬底1的垂直投影交叠；第二部分212在衬底1的垂直投影，与量子阱层22和第二半导体层23在衬底1的垂直投影不交叠；使第二半导体层23的表面形成高台阶面，第一半导体层21中第二部分212的表面形成底台阶面。第一电极3设置在第一半导体层21中第二部分212的底台阶面上，第二电极4设置在第二半导体层23的高台阶面上。
在示例性实施方式中，如图4所示，反射层5覆盖发光功能层2、第一 电极3以及第二电极4，即反射层5在衬底1的垂直投影，与发光功能层2、第一电极3以及第二电极4在衬底1的垂直投影交叠。
在示例性实施方式中，如图4所示，发光器件的主体结构还包括第一焊盘6和第二焊盘7，第一焊盘6和第二焊盘7均设置在反射层5远离衬底1的一侧表面。反射层5中设置有第一过孔和第二过孔，第一过孔延伸至第一电极3，第二过孔延伸至第二电极4。第一焊盘6通过第一过孔与第一电极3连接，第二焊盘7通过第二过孔与第二电极4连接。
在示例性实施方式中，如图4所示，在发光器件的第一方向，发光器件具有第一长度，第一长度为L，第一长度为在第一方向上，发光器件中衬底1一侧边缘至衬底1另一侧边缘的长度。第一焊盘6与第二焊盘7在第一方向上间隔排布。在发光器件的第一方向，第一焊盘6靠近第二焊盘7一侧边缘与第二焊盘7靠近第一焊盘6一侧边缘之间的距离为D，第一长度L与第一焊盘6靠近第二焊盘7一侧边缘与第二焊盘7靠近第一焊盘6一侧边缘之间的距离D满足关系式：33％L≤D≤66％L。相关技术中第一焊盘6靠近第二焊盘7一侧边缘与第二焊盘7靠近第一焊盘6一侧边缘之间的距离L为发光器件第一长度的26％至32％，本公开实施例发光器件通过增大第一焊盘6边缘与第二焊盘7边缘之间的距离L，减小发光器件的漏电电流。在发光器件的简化模型中，不同的第一焊盘6边缘与第二焊盘7边缘之间的距离L表现出不同的漏电水平，相同电压下，第一焊盘6边缘与第二焊盘7边缘之间的距离L越大，漏电流越小。可以将第一焊盘6与第二焊盘7之间的膜层理解为一个电阻，第一焊盘6边缘与第二焊盘7边缘之间的距离L作为电阻长度，根据电阻公式：R＝ρL/S，电阻大小与电阻长度成正比，第一焊盘6边缘与第二焊盘7边缘之间的距离L越大，电阻越大，漏电流越小。同时，第一焊盘6边缘与第二焊盘7边缘之间的距离L不能过大，否者会导致推力效果差。
在一些实施方式中，第一焊盘远离第二焊盘一侧边缘与发光功能层的一侧边缘平齐，第二焊盘远离第一焊盘一侧边缘与发光功能层的另一侧边缘平齐，从而增大第一焊盘靠近第二焊盘一侧边缘与第二焊盘靠近第一焊盘一侧边缘之间的距离L，减小发光器件的漏电电流。
实际应用中，将发光器件的衬底1朝上放置，位于发光器件远离衬底1一侧的第一焊盘6和第二焊盘7分别焊接在驱动基板的正负电极上。导通驱动基板上的正负电极，将电流注入发光器件中，驱动第一半导体层21和第二半导体层23分别将电子和空穴注入量子阱层22中进行复合发光，量子阱层22发出的光线透过衬底1射出。
本公开实施例还提供了一种发光基板，包括驱动基板，以及阵列设置于驱动基板上的前面任一所述的发光器件。
本公开实施例还提供了一种发光器件的制备方法，包括：
在衬底上形成发光功能层；
在所述衬底上形成反射层；所述反射层覆盖至少部分所述发光功能层；
其中，所述反射层至少包括第一材料层，所述第一材料层包括原子晶体材料，反射层还包括第二材料层，所述第一材料层与所述第二材料层沿所述衬底厚度方向叠层设置，所述第一材料层位于所述第二材料层远离所述衬底的一侧，所述第一材料层远离所述第二材料层的一侧的表面形成为所述反射层远离所述衬底一侧的表面。
在示例性实施方式中，在所述衬底上形成反射层包括：
通过原子层沉积工艺形成所述反射层的第二材料层。其中，第二材料层可以包括二氧化钛材料。
通过原子层沉积工艺(ALD)形成第二材料层，能够减小第二材料层的缺陷，提升晶体质量。例如，以第二材料层可以包括二氧化钛材料为例，二氧化钛材料一般为氧缺陷，通过电子束蒸镀方式会产生缺陷，尤其是制程中的高温会显著影响氧离子缺陷浓度，高温环境中，晶格中的氧离子会逸出到大气中，使晶体中出现氧空位，控制氧空位在一定的水平内，可以有效控制发光器件的微漏电情况。原子层沉积工艺(ALD)是一种可以将物质以单原子膜形式一层一层的镀在基底表面的方法，沉积层具有极均匀的厚度和优异的一致性，沉积的晶体质量较好，因此可以有效降低氧缺陷密度，进而改善发光器件的漏电情况。
在示例性实施方式中，第二材料层可以包括二氧化钛材料，在所述衬底 上形成反射层包括：
通过电子束蒸镀工艺形成所述反射层的第二材料层，其中，在沉积第二材料层过程中，氧气的分压为1×10 -2至5×10 -2。
在示例性实施方式中，氧气的分压可以为2*10 -2pa。氧气分压太小会导致O空位增多，氧气分压太大会导致膜层松散，最佳分压大小需要与其他工艺条件相匹配，所以最优分压条件需要根据实际确定。
以第二材料层可以包括二氧化钛材料为例。通过电子束蒸发工艺形成第二材料层时，增大第二材料层沉积过程中氧气分压。在第二材料层薄膜的沉积过程中，避免不了会出现氧缺陷，总反应的平衡常数：
Figure PCTCN2021127169-appb-000002
其中，
Figure PCTCN2021127169-appb-000003
为O空位，
Figure PCTCN2021127169-appb-000004
为环境中氧气浓度，因此，我们可以得到
Figure PCTCN2021127169-appb-000005
公式换一种形式
Figure PCTCN2021127169-appb-000006
即二氧化钛晶体中，氧空位浓度的6次方与环境气氛中的氧气压力成反比，由此可见，二氧化钛中的非化学计量，也就是氧缺陷浓度对环境气氛中的氧气浓度相当敏感，因此，增大制程中氧气分压，可有效降低二氧化钛晶体中的氧缺陷，进而改善发光器件漏电。
本公开实施例还提供了一种发光基板的制备方法，包括：
采用前述的发光器件的制备方法形成发光器件；
在所述发光器件的反射层上形成第一焊盘和第二焊盘；
通过助焊剂，将第一焊盘和第二焊盘分别与驱动基板焊接；
去除残留在所述反射层上的助焊剂。
在示例性实施方式中，去除残留在所述反射层上的助焊剂包括：
在60-180℃温度下，去除残留在所述反射层上的助焊剂；
或者，清洗去除残留在所述反射层上的助焊剂。
本公开发明人发现，通过助焊剂将第一焊盘和第二焊盘与驱动基板焊接，助焊剂中会有一些作为活性剂的物质，主要为一些羧酸。助焊剂会造成反射层靠近驱动基板一侧表面的缺陷。
以助焊剂有机羧酸，在相关技术发光器件中，
反射层靠近驱动基板一侧表面为离子晶体材料。以离子晶体材料为TiO 2为例。有机羧酸中的O可以与TiO 2表面的氧空位吸附在表面五配位的Ti原子上，也就是填补表面的O空位，有机羧酸中的H可以与TiO 2表面的O形成氢键，因此TiO2对于水和部分有机物的吸附性相对较强。吸附在表面的酸可以诱导次表面的O空位迁移至表面，实验数据表明，锐钛矿面在无吸附时，O空位从次表面到表面的能量势垒为1.01eV，而有甲酸单齿吸附时变成了0.12eV。因此，在表面存在O缺陷情况下，有机酸的引入则会进一步引起TiO 2的O缺陷浓度，使TiO 2电导率进一步加大。
因此，减少助焊剂对发光器件漏电水平的影响可以有效的解决AM驱动下低灰起亮问题。
通过助焊剂，将第一焊盘和第二焊盘与驱动基板焊接后，在60-180℃温度下，去除残留在反射层上的助焊剂。助焊剂中的活性物质为有机酸，有机酸的挥发温度和分解温度一般较低，高温可以有效的将残留的助焊剂挥发干净，因此焊接完后高温烘烤可以改善低灰起亮问题。
本公开中的附图只涉及本公开涉及到的结构，其他结构可参考通常设计。在不冲突的情况下，本公开的实施例即实施例中的特征可以相互组合以得到新的实施例。
本领域的普通技术人员应当理解，可以对本公开的技术方案进行修改或者等同替换，而不脱离本公开技术方案的精神和范围，均应涵盖在本公开的权利要求的范围当中。

Claims (19)

  1. 一种发光器件，包括衬底、设置在所述衬底上的发光功能层，以及设置在所述衬底上将至少部分所述发光功能层覆盖的反射层，所述反射层包括第一材料层和第二材料层，所述第一材料层与所述第二材料层沿所述衬底厚度方向叠层设置，所述第一材料层包括原子晶体材料，所述第一材料层位于所述第二材料层远离所述衬底的一侧，所述第一材料层远离所述第二材料层的一侧的表面形成为所述反射层远离所述衬底一侧的表面。
  2. 根据权利要求1所述的发光器件，其中，所述第一材料层包括氧化铝、二氧化硅以及氮化铝中的至少一种。
  3. 根据权利要求1所述的发光器件，其中，所述反射层还包括多个第三材料层，所述第二材料层的数目也为多个，所述第三材料层与所述第二材料层沿所述衬底的厚度方向依次交替叠置。
  4. 根据权利要求3所述的发光器件，其中，所述第三材料层与所述第一材料层包括相同的原子晶体材料，所述第一材料层朝向所述衬底的表面设置了一层所述第二材料层。
  5. 根据权利要求4所述的发光器件，其中，所述第一材料层、所述第二材料层以及所述第三材料层的光学厚度均为所述反射层的中心反射波长的四分之一。
  6. 根据权利要求1所述的发光器件，其中，所述第二材料层包括二氧化钛材料。
  7. 根据权利要求1所述的发光器件，其中，所述发光功能层包括在所述衬底上依次设置的第一半导体层、量子阱层、第二半导体层以及导电层，所述第一半导体层包括第一部分以及第二部分，所述第一部分在所述衬底的垂直投影，与所述量子阱层和所述第二半导体层在所述衬底的垂直投影交叠；所述第二部分在所述衬底的垂直投影，与所述量子阱层和所述第二半导体层在所述衬底的垂直投影不交叠。
  8. 根据权利要求7所述的发光器件，还包括第一电极和第二电极，所述 第一电极设置在所述第一半导体层中第二部分上，所述第二电极设置在所述第二半导体层上。
  9. 根据权利要求8所述的发光器件，其中，所述反射层在所述衬底的垂直投影，与所述第一电极以及所述第二电极在所述衬底的垂直投影交叠。
  10. 根据权利要求9所述的发光器件，还包括第一焊盘和第二焊盘，所述第一焊盘和所述第二焊盘均设置在所述反射层远离所述衬底的一侧，所述反射层中设置有第一过孔和第二过孔，所述第一焊盘通过所述第一过孔与所述第一电极连接，所述第二焊盘通过所述第二过孔与所述第二电极连接。
  11. 根据权利要求10所述的发光器件，其中，在所述发光器件的第一方向，所述发光器件具有第一长度，所述第一长度为L，所述第一焊盘与所述第二焊盘在所述第一方向上间隔排布，所述第一焊盘靠近所述第二焊盘一侧边缘与所述第二焊盘靠近所述第一焊盘一侧边缘之间的距离为D，所述第一长度L与所述距离D满足关系式：33％L≤D≤66％L。
  12. 根据权利要求10所述的发光器件，其中，所述第一焊盘远离所述第二焊盘一侧边缘与所述发光功能层的一侧边缘平齐，所述第二焊盘远离所述第一焊盘一侧边缘与所述发光功能层的另一侧边缘平齐。
  13. 根据权利要求1所述的发光器件，其中，所述发光器件为发光二极管。
  14. 一种发光基板，包括驱动基板，以及阵列设置于所述驱动基板上权利要求1至13任一所述的发光器件。
  15. 一种发光器件的制备方法，包括：
    在衬底上形成发光功能层；
    在所述衬底上形成反射层；所述反射层覆盖至少部分所述发光功能层；
    其中，所述反射层至少包括第一材料层，所述第一材料层包括原子晶体材料，反射层还包括第二材料层，所述第一材料层与所述第二材料层沿所述衬底厚度方向叠层设置，所述第一材料层位于所述第二材料层远离所述衬底的一侧，所述第一材料层远离所述第二材料层的一侧的表面形成为所述反射 层远离所述衬底一侧的表面。
  16. 根据权利要求15所述的发光器件的制备方法，其中，在所述衬底上形成反射层包括：
    通过原子层沉积工艺形成所述反射层的第二材料层。
  17. 根据权利要求15所述的发光器件的制备方法，其中，所述第二材料层包括二氧化钛材料，在所述衬底上形成反射层包括：
    通过电子束蒸镀工艺形成所述反射层的第二材料层，其中，在沉积第二材料层过程中，氧气的分压为1×10 -2至5×10 -2。
  18. 一种发光基板的制备方法，包括：
    采用如权利要求15至17任一所述的发光器件的制备方法形成发光器件；在所述发光器件的反射层上形成第一焊盘和第二焊盘；
    通过助焊剂，将第一焊盘和第二焊盘分别与驱动基板焊接；
    去除残留在所述反射层上的助焊剂。
  19. 根据权利要求18所述的发光基板的制备方法，其中，去除残留在所述反射层上的助焊剂包括：
    在60-180℃温度下，去除残留在所述反射层上的助焊剂；
    或者，清洗去除残留在所述反射层上的助焊剂。
PCT/CN2021/127169 2021-10-28 2021-10-28 一种发光器件及其制备方法、发光基板及其制备方法 WO2023070464A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US17/920,017 US20240213422A1 (en) 2021-10-28 2021-10-28 Light Emitting Device and Preparation Method Therefor, Light Emitting Substrate and Preparation Method Thereof
PCT/CN2021/127169 WO2023070464A1 (zh) 2021-10-28 2021-10-28 一种发光器件及其制备方法、发光基板及其制备方法
CN202180003142.1A CN116368629A (zh) 2021-10-28 2021-10-28 一种发光器件及其制备方法、发光基板及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/127169 WO2023070464A1 (zh) 2021-10-28 2021-10-28 一种发光器件及其制备方法、发光基板及其制备方法

Publications (1)

Publication Number Publication Date
WO2023070464A1 true WO2023070464A1 (zh) 2023-05-04

Family

ID=86160399

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/127169 WO2023070464A1 (zh) 2021-10-28 2021-10-28 一种发光器件及其制备方法、发光基板及其制备方法

Country Status (3)

Country Link
US (1) US20240213422A1 (zh)
CN (1) CN116368629A (zh)
WO (1) WO2023070464A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116995157A (zh) * 2023-09-25 2023-11-03 苏州芯聚半导体有限公司 微led芯片封装结构的制作方法和封装结构

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108172674A (zh) * 2018-02-06 2018-06-15 佛山市国星半导体技术有限公司 一种倒装led芯片及其制作方法
CN109346564A (zh) * 2018-08-30 2019-02-15 华灿光电（浙江）有限公司 一种倒装发光二极管芯片的制作方法
US20200083405A1 (en) * 2018-09-07 2020-03-12 Samsung Electronics Co., Ltd. Light-emitting device and display device including the same
CN111081832A (zh) * 2019-12-26 2020-04-28 福建兆元光电有限公司 一种Mini LED芯片及制造方法
CN113410364A (zh) * 2021-06-18 2021-09-17 聚灿光电科技（宿迁）有限公司 一种微led及其制备方法
CN113451476A (zh) * 2021-07-01 2021-09-28 厦门乾照光电股份有限公司 一种微型发光元件及其制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108172674A (zh) * 2018-02-06 2018-06-15 佛山市国星半导体技术有限公司 一种倒装led芯片及其制作方法
CN109346564A (zh) * 2018-08-30 2019-02-15 华灿光电（浙江）有限公司 一种倒装发光二极管芯片的制作方法
US20200083405A1 (en) * 2018-09-07 2020-03-12 Samsung Electronics Co., Ltd. Light-emitting device and display device including the same
CN111081832A (zh) * 2019-12-26 2020-04-28 福建兆元光电有限公司 一种Mini LED芯片及制造方法
CN113410364A (zh) * 2021-06-18 2021-09-17 聚灿光电科技（宿迁）有限公司 一种微led及其制备方法
CN113451476A (zh) * 2021-07-01 2021-09-28 厦门乾照光电股份有限公司 一种微型发光元件及其制作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116995157A (zh) * 2023-09-25 2023-11-03 苏州芯聚半导体有限公司 微led芯片封装结构的制作方法和封装结构
CN116995157B (zh) * 2023-09-25 2024-01-02 苏州芯聚半导体有限公司 微led芯片封装结构的制作方法和封装结构

Also Published As

Publication number Publication date
US20240213422A1 (en) 2024-06-27
CN116368629A (zh) 2023-06-30

Similar Documents

Publication Publication Date Title
JP6631973B2 (ja) 量子ドット複合材料ならびにその製造方法および用途
US10401557B2 (en) Semiconductor light emitting diode chip and light emitting device having the same
WO2017186024A1 (zh) Led显示模组、显示装置及显示模组的制作方法
US10319878B2 (en) Stratified quantum dot phosphor structure
US20140132890A1 (en) Quantum dot color filter, liquid crystal panel and display device
CN105425469B (zh) 一种背光模组及其制作方法、显示装置
US9583731B2 (en) Organic electroluminescence element
KR102036347B1 (ko) 발광소자 어레이부 및 이를 포함하는 발광소자 모듈
CN108878667A (zh) 发光器件及其制作方法、电子装置
TWI480660B (zh) 顯示裝置
US12040435B2 (en) Light-emitting device and image display apparatus with reflection film on side surface and layers having different refractive indices
WO2017024572A1 (zh) Led光源结构及其封装方法
US20120313113A1 (en) Photovoltaic organic light emitting diodes device and manufacturing method thereof
WO2023070464A1 (zh) 一种发光器件及其制备方法、发光基板及其制备方法
JP2023538769A (ja) モノリシック・ナノコラム構造
WO2021073283A1 (zh) 一种基于波长下转换的无电学接触μLED发光器件
US8901810B2 (en) Transparent OLED device with high intensity
CN113782561A (zh) 一种高亮度高可靠性的Micro-LED显示装置
CN108181763B (zh) 背光模组及液晶显示装置
CN109031767A (zh) 一种彩膜基板、显示装置及制作方法
US9793685B2 (en) Junctionless semiconductor light emitting devices
CN108461610B (zh) 一种量子点led和制备方法
US20200091378A1 (en) Display panel and display apparatus
CN110161743A (zh) 一种基板及其制备方法、液晶显示面板及液晶显示装置
TW200415935A (en) Electroluminescent device with a color filter

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 17920017

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21961830

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE