CN110416249A - A kind of light emitting semiconductor device and preparation method thereof - Google Patents
A kind of light emitting semiconductor device and preparation method thereof Download PDFInfo
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- CN110416249A CN110416249A CN201910772107.0A CN201910772107A CN110416249A CN 110416249 A CN110416249 A CN 110416249A CN 201910772107 A CN201910772107 A CN 201910772107A CN 110416249 A CN110416249 A CN 110416249A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
Abstract
A kind of light emitting semiconductor device and preparation method thereof, belong to semiconductor light electro-technical field, in the side of substrate successively epitaxial growth buffer, unintentional doped gan layer and n-type doping GaN layer, again by depositing dielectric mask layer three times, blue light is etched with gap, green light and red light-emitting structure layer region, and light emitting structure layer is made in each region, reach and has integrated inorganic GaN base blue light and green light LED with organic red light OLED technology, it will be red, it is green, blue three-color light-emitting unit transverse is deposited on n-type doping GaN layer, and the effect connected by n-type doping GaN layer.Present invention improves GaN base blue green light LEDs to be difficult to compatible problem with GaAs base red-light LED material system, improves the efficiency that flood tide shifts in the full-color display technology of Micro LED, reduces the complexity of end product production.
Description
Technical field
The invention belongs to the production technologies of semiconductor light electro-technical field, especially light emitting semiconductor device.
Background technique
Micro LED has a vast market foreground as next-generation display technology, in the industry cycle obtains extensive concern.By
Need to integrate the red, green, blue three-primary color LED chip of high density microsize on one piece of screen in the full-color display of Micro LED
Array, therefore the gradation flood tide transfer techniques of red, green, blue three-primary color LED chip become the major technology bottleneck for restricting its development.
If flood tide transfer can be can be improved by red, green, blue three-primary color LED chip manufacturing at the integrated light emitting unit of chip level
Efficiency, reduce end product production complexity.For red, green, blue three-primary color LED chip, general blue light and green light LED are
Extension InGaN material is completed on a sapphire substrate, and red-light LED is then the extension AlInGaP material in gallium arsenide substrate
It completes, since there are biggish lattice mismatch and thermal mismatchings between both material systems, is substantially difficult same
The LED chip structure of blue and green light and feux rouges is completed at the same time on material substrate.
On the other hand, since OLED is mainly high-molecular organic material, and blue light wavelength is short, and energy is relatively high, is easy
The decay for causing organic material causes Nan dian Yao stability of material poor, and the service life is short.Blue lifetime problem is that it can not avoid
One short slab, becomes the bottleneck in OLED technology.
Summary of the invention
That the object of the present invention is to provide a kind of structures is simple, facilitate production there is red, green, blue three primary colours Micro LED
The light emitting semiconductor device of luminescence unit.
The technical scheme is that: sequence setting buffer layer, unintentional doped gan layer and n-type doping GaN on substrate
N-type electrode, dielectric mask layer, blue-ray LED light emitting structure layer, green light LED hair is respectively set in layer in n-type doping GaN layer
Photo structure layer and feux rouges OLED light emitting structure layer, in the blue-ray LED light emitting structure layer, green LED structure sheaf and feux rouges
P-type electrode is respectively set in OLED light emitting structure layer surface；Feature is: the blue-ray LED light emitting structure layer, green LED knot
Structure layer and feux rouges OLED light emitting structure layer compartment of terrain are distributed between dielectric mask layer；The blue-ray LED light emitting structure layer
It from bottom to top include: InGaN/GaN blue light multiple quantum well active layer, electronic barrier layer, p-type doping GaN layer and transparency conducting layer；
The green LED structure sheaf includes: InGaN/GaN green light multiple quantum well active layer, electronic barrier layer, p-type from bottom to top
Doped gan layer and transparency conducting layer；The feux rouges OLED light emitting structure layer includes: the first transparency conducting layer, electronics from bottom to top
Transport layer, feux rouges organic luminous layer, hole transmission layer and the second transparency conducting layer.
Structure briefly above makes blue-ray LED light emitting structure layer, green LED structure sheaf and feux rouges OLED light emitting structure
Layer is laterally deposited on the n-type doping GaN layer, and is connected by n-type doping GaN layer, by inorganic GaN base blue light and green light
LED and organic red light OLED technology are integrated, are fabricated to red, green, blue three primary colours Micro LED luminescence unit, make full use of inorganic
The respective luminescent properties advantage of GaN base LED and organic OLED improves GaN base blue green light LED and GaAs base red-light LED material bodies
System is difficult to compatible problem, and by the integrated of the red, green, blue three primary color elements pixel of chip level, it is complete to improve Micro LED
The efficiency that flood tide shifts in color display technology reduces the complexity of end product production.
Further, the width of the blue-ray LED light emitting structure layer is 1~100 μm；The green LED structure sheaf
Width be 1~100 μm；The width of the feux rouges OLED light emitting structure layer is 1~100 μm.It can be by changing blue-ray LED hair
Photo structure layer, green LED structure sheaf and the feux rouges respective width of OLED light emitting structure layer control light emitting semiconductor device
Spectrum proportion and distribution.
It is another object of the present invention to propose the production method of above-mentioned light emitting semiconductor device.
That is: first in ipsilateral successively epitaxial growth buffer, unintentional doped gan layer and the n-type doping GaN layer of substrate；So
It is further comprising the steps of afterwards:
1) dielectric mask layer is deposited for the first time in the n-type doping GaN layer, and by lithographic method, in the insulation
Blue-ray LED light emitting structure layer growth district is etched in medium mask layer, etching depth is until expose the n-type doping GaN layer；
2) successively epitaxial growth InGaN/GaN blue light multiple quantum wells is active in the blue-ray LED light emitting structure layer growth district
Layer, electronic barrier layer and p-type doping GaN layer；
3) second of the p-type doping GaN layer surface of the dielectric mask layer of reservation and blue-ray LED light emitting structure layer, deposition is exhausted
Edge medium mask layer, and by lithographic method, the growth of green LED structure sheaf is etched in the dielectric mask layer
Region, etching depth is until expose the n-type doping GaN layer；
4) successively epitaxial growth InGaN/GaN green light multiple quantum wells is active in the green LED structure sheaf growth district
Layer, electronic barrier layer and p-type doping GaN layer；
5) on the p-type doping GaN layer surface of the dielectric mask layer of reservation and green LED structure sheaf, third time is deposited absolutely
Edge medium mask layer, and by lithographic method, it is raw that feux rouges OLED light emitting structure layer is etched in the dielectric mask layer
Long region, etching depth is until expose the n-type doping GaN layer；
6) being sequentially depositing transparency conducting layer, electron transfer layer, feux rouges in the feux rouges OLED light emitting structure layer growth district has
Machine luminescent layer and hole transmission layer；
7) dielectric mask layer is performed etching, until expose the p-type doping GaN layer in the blue-ray LED light emitting structure layer,
The hole transmission layer in p-type doping GaN layer and feux rouges OLED light emitting structure layer in green LED structure sheaf；
8) in the p-type doping GaN layer in the blue-ray LED light emitting structure layer, the p-type doping GaN in green LED structure sheaf
Transparency conducting layer is deposited on hole transmission layer in layer and feux rouges OLED light emitting structure layer；
9) by lithographic method, n-type electrode production region is etched in the dielectric mask layer, etching depth is until dew
The n-type doping GaN layer out；
10) in transparent the leading of the blue-ray LED light emitting structure layer, green LED structure sheaf and feux rouges OLED light emitting structure layer
P-type electrode is made in electric layer respectively, makes n-type electrode in the n-type doping GaN layer in n-type electrode production region.
Further, the material of the dielectric mask layer is in silica, silicon nitride, silicon oxynitride or aluminium oxide
Any one, but not limited to this.Above-mentioned dielectric mask layer is used as separation layer.
The width of corresponding each light emitting structure layer in order to obtain, the blue-ray LED light emitting structure layer growth district etched
Width be 1~100 μm；The width of the green LED structure sheaf growth district etched is 1~100 μm；What is etched is red
The width of light OLED light emitting structure layer growth district is 1~100 μm.
The present invention etches blue-ray LED light emitting structure layer, green light by depositing dielectric mask layer three times with gap
LED light emitting structure layer and feux rouges OLED light emitting structure layer, and corresponding light emitting structure is made in the etch areas being correspondingly formed
Layer, has reached and has integrated inorganic GaN base blue light and green light LED with organic red light OLED technology, be fabricated to red, green, blue three primary colours
Micro LED luminescence unit, and red, green, blue three-color light-emitting unit transverse is deposited on n-type doping GaN layer, and is led to
Cross the effect of n-type doping GaN layer connection.
The beneficial effects of the present invention are: inorganic GaN base blue light and green light LED are integrated with organic red light OLED technology, make
It is made red, green, blue three primary colours Micro LED luminescence unit, takes full advantage of inorganic GaN base LED and the respective hair of organic OLED
Optical property advantage improves GaN base blue green light LED with GaAs base red-light LED material system and is difficult to compatible problem, and passes through core
The other red, green, blue three primary color elements pixel of chip level integrates, and improves what flood tide in the full-color display technology of Micro LED shifted
Efficiency reduces the complexity of end product production.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of light emitting semiconductor device of the invention.
Fig. 2 is the structural schematic diagram grown after blue-ray LED light emitting structure layer.
Fig. 3 is the structural schematic diagram grown after green LED structure sheaf.
Fig. 4 is the structural schematic diagram deposited after feux rouges OLED light emitting structure layer.
Fig. 5 is the structural schematic diagram after having made transparency conducting layer.
Wherein, main appended drawing reference is described as follows:
10: substrate；
20: buffer layer；
30: unintentional doped gan layer；
40:n type doped gan layer；
50: dielectric mask layer；
61: blue light multiple quantum well active layer；
62: blue light electronic barrier layer；
63: blue light p-type doping GaN layer；
71: green light multiple quantum well active layer；
72: green light electronic barrier layer；
73: green light p-type doping GaN layer；
81: electron transfer layer；
82: feux rouges organic luminous layer；
83: hole transmission layer；
90: transparency conducting layer；
101:p type electrode；
102:n type electrode.
Specific embodiment
One, making step:
1, a kind of substrate 10 is provided, can be sapphire, silicon, silicon carbide, any one in gallium nitride, but not limited to this.
2, in MOCVD board, using conventional LED growth technology, the successively epitaxial growth buffer on substrate 10
20, unintentional doped gan layer 30 and n-type doping GaN layer 40.
3, by plasma reinforced chemical vapour deposition method, dielectric is deposited for the first time in n-type doping GaN layer 40
Mask layer 50, then blue-ray LED area mask is made on 50 surface of dielectric mask layer by way of photoetching, masked areas
Width etches blue-ray LED using chemical attack or sense coupling method and shines between 1~100 μm
Structure sheaf growth district exposes n-type doping GaN layer 40 for growing blue-ray LED light emitting structure layer.
4, it in MOCVD board, using conventional blue laser LED growth technology, shines in the blue-ray LED that step 3 is formed
Successively epitaxial growth InGaN/GaN blue light multiple quantum well active layer 61, electronic barrier layer 62 and p-type are mixed in structure sheaf growth district
Miscellaneous GaN layer 63, as shown in Figure 2.
5, it by plasma reinforced chemical vapour deposition method, is deposited absolutely for second on the epitaxial structure that step 4 is formed
Edge medium mask layer 50, then green light LED area mask, exposure mask are made on 50 surface of dielectric mask layer by way of photoetching
The width in region etches green light between 1~100 μm, and using chemical attack or sense coupling method
LED light emitting structure layer growth district exposes n-type doping GaN layer 40 for growing green LED structure sheaf.
6, in MOCVD board, using conventional green light LED growth technology, in the green LED that step 5 is formed
Successively epitaxial growth InGaN/GaN green light multiple quantum well active layer 71, electronic barrier layer 72 and p-type are mixed in structure sheaf growth district
Miscellaneous GaN layer 73, as shown in Figure 3.
7, by plasma reinforced chemical vapour deposition method, deposition is exhausted for the third time on the epitaxial structure that step 6 is formed
Edge medium mask layer 50, then feux rouges OLED area mask is made on 50 surface of dielectric mask layer by way of photoetching, it covers
The width of diaphragm area etches feux rouges between 1~100 μm, and using chemical attack or sense coupling method
OLED light emitting structure layer growth district exposes n-type doping GaN layer 40 for depositing feux rouges OLED light emitting structure layer.
8, by electron beam evaporation plating or magnetically controlled sputter method, in the feux rouges OLED light emitting structure layer vitellarium that step 7 is formed
Transparency conducting layer 90 is deposited in domain, then by vacuum thermal evaporation method, using conventional feux rouges OLED film technique, in electrically conducting transparent
It is sequentially depositing electron transfer layer 81, feux rouges organic luminous layer 82 and hole transmission layer 83 on layer 90, as shown in Figure 4.
9, by the method for photoetching, exposure mask is made in feux rouges OLED light emitting structure layer surface, and use chemical attack or sense
Coupled plasma etch method is answered, the dielectric mask layer 50 for the body structure surface that step 8 is formed is etched into a part, until
Expose blue-ray LED light emitting structure layer, green LED structure sheaf and feux rouges OLED light emitting structure layer.
10, conductive in the body structure surface deposition layer of transparent that step 9 is formed by electron beam evaporation plating or magnetically controlled sputter method
Film, then by way of photoetching surface make exposure mask, and using corrosion by the way of, only reservation blue-ray LED light emitting structure layer,
The transparent conductive film of green LED structure sheaf and feux rouges OLED light emitting structure layer surface forms transparency conducting layer 90, such as schemes
Shown in 5.
11, by the method for photoetching, exposure mask is made in the body structure surface that step 10 is formed, and use chemical attack or induction
The dielectric mask layer 50 on surface is etched n-type electrode region, exposes n-type doping GaN by coupled plasma etch method
Layer 40 is for making n-type electrode.
12, by the method for photoetching, exposure mask, then the side for passing through electron beam evaporation plating are made in the body structure surface that step 11 is formed
Method removes the metal of masked areas in surface deposited metal layer by the way of removing, in blue-ray LED light emitting structure layer, green
P-type electrode 101 is made respectively on the transparency conducting layer 90 of light LED light emitting structure layer and feux rouges OLED light emitting structure layer, in N-shaped electricity
N-type electrode 102 is made in the n-type doping GaN layer 40 in polar region domain, as shown in Figure 1.
Dielectric mask layer 50 is also used as separation layer simultaneously in the above manufacturing process, dielectric mask layer 50
Material can be silica, silicon nitride, silicon oxynitride, any one in aluminium oxide, and but not limited to this.
Two, the design feature of product is made:
As shown in Figure 1, product structure includes: substrate 10, buffer layer 20, unintentional doped gan layer 30, n-type doping from bottom to top
GaN layer 40, and blue-ray LED light emitting structure layer in the n-type doping GaN layer 40, green LED structure sheaf and red
Light OLED light emitting structure layer.
The blue-ray LED light emitting structure layer, the green LED structure sheaf and the feux rouges OLED light emitting structure layer point
It is not deposited on the n-type doping GaN layer 40 not laterally, and is connected by the n-type doping GaN layer 40.
Blue-ray LED light emitting structure layer is by InGaN/GaN blue light multiple quantum well active layer 61, electronic barrier layer 62, p-type doping
GaN layer 63 and transparency conducting layer 90 form.
Green LED structure sheaf by: InGaN/GaN green light multiple quantum well active layer 71, electronic barrier layer 72, p-type are mixed
Miscellaneous GaN layer 73 and transparency conducting layer 90 form.
Feux rouges OLED light emitting structure layer is by the first transparency conducting layer 90, electron transfer layer 81, feux rouges organic luminous layer 82, sky
Cave transport layer 83 and the second transparency conducting layer 90 composition.
In addition, in order to by changing the blue-ray LED light emitting structure layer, the green LED structure sheaf and described red
The respective width size of light OLED light emitting structure layer matches and distribution to control the spectrum of light emitting semiconductor device.Therefore, product
The width of middle blue-ray LED light emitting structure layer, green LED structure sheaf and feux rouges OLED light emitting structure layer 1~100 μm it
Between.
The technical program that the above embodiments are only illustrative and not limiting, any technical side for not departing from the scope of the invention
Case is covered by the protection scope of the present invention.
Claims (9)
1. a kind of light emitting semiconductor device, buffer layer, unintentional doped gan layer and n-type doping GaN is arranged in sequence on substrate
N-type electrode, dielectric mask layer, blue-ray LED light emitting structure layer, green light LED hair is respectively set in layer in n-type doping GaN layer
Photo structure layer and feux rouges OLED light emitting structure layer, in the blue-ray LED light emitting structure layer, green LED structure sheaf and feux rouges
P-type electrode is respectively set in OLED light emitting structure layer surface；It is characterized by: the blue-ray LED light emitting structure layer, green light LED are sent out
Photo structure layer and feux rouges OLED light emitting structure layer compartment of terrain are distributed between dielectric mask layer；The blue-ray LED light-emitting junction
Structure layer includes: InGaN/GaN blue light multiple quantum well active layer, electronic barrier layer, p-type doping GaN layer and transparent leads from bottom to top
Electric layer；The green LED structure sheaf includes: InGaN/GaN green light multiple quantum well active layer, electronic blocking from bottom to top
Layer, p-type doping GaN layer and transparency conducting layer；The feux rouges OLED light emitting structure layer includes: the first electrically conducting transparent from bottom to top
Layer, electron transfer layer, feux rouges organic luminous layer, hole transmission layer and the second transparency conducting layer.
2. light emitting semiconductor device according to claim 1, it is characterised in that: the width of the blue-ray LED light emitting structure layer
Degree is 1~100 μm.
3. light emitting semiconductor device according to claim 1, it is characterised in that: the width of the green LED structure sheaf
Degree is 1~100 μm.
4. light emitting semiconductor device according to claim 1, it is characterised in that: the width of the feux rouges OLED light emitting structure layer
Degree is 1~100 μm.
5. the production method of light emitting semiconductor device as described in claim 1, substrate ipsilateral successively epitaxial growth buffer,
Unintentional doped gan layer and n-type doping GaN layer；Characterized by further comprising following steps:
1) dielectric mask layer is deposited for the first time in the n-type doping GaN layer, and by lithographic method, in the insulation
Blue-ray LED light emitting structure layer growth district is etched in medium mask layer, etching depth is until expose the n-type doping GaN layer；
2) successively epitaxial growth InGaN/GaN blue light multiple quantum wells is active in the blue-ray LED light emitting structure layer growth district
Layer, electronic barrier layer and p-type doping GaN layer；
3) second of the p-type doping GaN layer surface of the dielectric mask layer of reservation and blue-ray LED light emitting structure layer, deposition is exhausted
Edge medium mask layer, and by lithographic method, the growth of green LED structure sheaf is etched in the dielectric mask layer
Region, etching depth is until expose the n-type doping GaN layer；
4) successively epitaxial growth InGaN/GaN green light multiple quantum wells is active in the green LED structure sheaf growth district
Layer, electronic barrier layer and p-type doping GaN layer；
5) on the p-type doping GaN layer surface of the dielectric mask layer of reservation and green LED structure sheaf, third time is deposited absolutely
Edge medium mask layer, and by lithographic method, it is raw that feux rouges OLED light emitting structure layer is etched in the dielectric mask layer
Long region, etching depth is until expose the n-type doping GaN layer；
6) being sequentially depositing transparency conducting layer, electron transfer layer, feux rouges in the feux rouges OLED light emitting structure layer growth district has
Machine luminescent layer and hole transmission layer；
7) dielectric mask layer is performed etching, until expose the p-type doping GaN layer in the blue-ray LED light emitting structure layer,
The hole transmission layer in p-type doping GaN layer and feux rouges OLED light emitting structure layer in green LED structure sheaf；
8) in the p-type doping GaN layer in the blue-ray LED light emitting structure layer, the p-type doping GaN in green LED structure sheaf
Transparency conducting layer is deposited on hole transmission layer in layer and feux rouges OLED light emitting structure layer；
9) by lithographic method, n-type electrode production region is etched in the dielectric mask layer, etching depth is until dew
The n-type doping GaN layer out；
10) in transparent the leading of the blue-ray LED light emitting structure layer, green LED structure sheaf and feux rouges OLED light emitting structure layer
P-type electrode is made in electric layer respectively, makes n-type electrode in the n-type doping GaN layer in n-type electrode production region.
6. the production method of light emitting semiconductor device according to claim 5, it is characterised in that: the dielectric exposure mask
The material of layer is any one in silica, silicon nitride, silicon oxynitride or aluminium oxide.
7. the production method of light emitting semiconductor device according to claim 5 or 6, it is characterised in that: the blue light etched
The width of LED light emitting structure layer growth district is 1~100 μm.
8. the production method of light emitting semiconductor device according to claim 5 or 6, it is characterised in that: the green light etched
The width of LED light emitting structure layer growth district is 1~100 μm.
9. the production method of light emitting semiconductor device according to claim 5 or 6, it is characterised in that: the feux rouges etched
The width of OLED light emitting structure layer growth district is 1~100 μm.
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| CN114038967A (en) * | 2021-07-27 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | LED epitaxial structure, manufacturing method thereof and LED device |
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