WO2023054531A1 - Shower plate - Google Patents

Shower plate Download PDF

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Publication number
WO2023054531A1
WO2023054531A1 PCT/JP2022/036301 JP2022036301W WO2023054531A1 WO 2023054531 A1 WO2023054531 A1 WO 2023054531A1 JP 2022036301 W JP2022036301 W JP 2022036301W WO 2023054531 A1 WO2023054531 A1 WO 2023054531A1
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WO
WIPO (PCT)
Prior art keywords
shower plate
inner space
introduction holes
plate according
base
Prior art date
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PCT/JP2022/036301
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French (fr)
Japanese (ja)
Inventor
猛 宗石
大貴 渡邉
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京セラ株式会社
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Publication of WO2023054531A1 publication Critical patent/WO2023054531A1/en

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • the disclosed embodiments relate to shower plates.
  • a shower head that ejects process gas onto a substrate such as a semiconductor wafer has been used.
  • a shower plate includes, for example, a disk-shaped substrate made of ceramics and having a space inside, and a plurality of ejection holes that are open on one surface of the substrate and eject gas introduced into the space inside the substrate. is known (see Patent Document 1).
  • a shower plate includes a base, partition walls, supply ports, and a plurality of ejection holes.
  • the substrate is a plate-like substrate made of ceramics and having a space inside.
  • the partition separates the space of the substrate into an inner space and a channel located around the inner space.
  • the supply port supplies gas to the channel.
  • a plurality of ejection holes communicate with the inner space and open to one surface of the substrate to eject gas.
  • the partition wall has a plurality of introduction holes for communicating the inner space and the channel and for introducing the gas flowing through the channel into the inner space.
  • FIG. 1 is a schematic perspective view of a shower plate according to the first embodiment.
  • FIG. FIG. 2 is a schematic side cross-sectional view of the shower plate according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional plan view of the shower plate according to the first embodiment.
  • FIG. 4 is a schematic cross-sectional plan view of a shower plate according to Modification 1 of the first embodiment.
  • FIG. 5 is a schematic cross-sectional plan view of a shower plate according to Modification 2 of the first embodiment.
  • FIG. 6 is a schematic side sectional view of the shower plate according to the second embodiment.
  • FIG. 7 is a schematic cross-sectional plan view of the shower plate according to the second embodiment.
  • each embodiment can be appropriately combined within a range that does not contradict the processing content.
  • the same parts are denoted by the same reference numerals, and overlapping descriptions are omitted.
  • FIG. 1 is a schematic perspective view of a shower plate 1 according to the first embodiment.
  • FIG. 2 is a schematic side sectional view of the shower plate 1 according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional plan view of the shower plate 1 according to the first embodiment. 3 shows a schematic cross-sectional view taken along line III-III in FIG.
  • a shower plate 1 according to the first embodiment shown in FIG. 1 ejects process gas onto a substrate such as a semiconductor wafer in, for example, a semiconductor manufacturing process.
  • the shower plate 1 is mounted, for example, in a substrate processing apparatus that performs plasma processing or the like on substrates.
  • the shower plate 1 has a base 10.
  • the substrate 10 has, for example, a disk shape with a thickness in the vertical direction.
  • the base 10 has an upper surface 101 and a lower surface 102 which are circular in plan view, and a side surface 103 connecting the upper surface 101 and the lower surface 102 .
  • the upper surface 101 and the lower surface 102 of the substrate 10 are substantially parallel.
  • the lower surface 102 of the substrate 10 faces the substrate supported by the substrate support.
  • the substrate 10 is made of ceramics, for example, and has insulating properties. Ceramics constituting the substrate 10 are, for example, aluminum nitride (AlN), aluminum oxide (Al 2 O 3 , alumina), yttrium oxide (Y 2 O 3 , yttria), silicon carbide (SiC), silicon nitride (Si 3 N 4 ), etc. as a main component.
  • the main component is, for example, a material that accounts for 50% by mass or more or 80% by mass or more of the material.
  • the shape of the substrate 10 is arbitrary.
  • the substrate 10 has a disk shape, but it is not limited to this, and may have an elliptical plate shape, a rectangular plate shape, a trapezoidal plate shape, or the like.
  • a space 11 is provided inside the base 10 .
  • a partition wall 20 is located in the space 11 of the base body 10 and separates the space 11 of the base body 10 into an inner space 111 and a flow path 112 positioned around the inner space 111 .
  • the shower plate 1 has a supply port 12 and a plurality of ejection holes 13 .
  • the supply port 12 is positioned on the side surface 103 of the substrate 10, communicates with the flow path 112, and is connected to a process gas supply source via a gas supply pipe (not shown) or the like.
  • the supply port 12 is a through hole penetrating the side surface 103 of the substrate 10 and the outer surface of the channel 112 in the radial direction of the substrate 10 .
  • a process gas supplied from a process gas supply source is introduced into the supply port 12 through a gas supply pipe.
  • the supply port 12 supplies the introduced process gas to the flow path 112 .
  • the supply port 12 does not necessarily have to be positioned on the side surface 103 of the substrate 10, and may be positioned on the upper surface 101 or the lower surface 102 of the substrate 10, for example. Moreover, the number of supply ports 12 is arbitrary, and one supply port 12 may be provided in the base 10 , or a plurality of supply ports 12 may be provided in the base 10 . For example, in FIGS. 2 and 3, two supply ports 12 located on side surfaces 103 of substrate 10 are shown.
  • a plurality of ejection holes 13 communicate with the inner space 111 and open to the lower surface 102 of the substrate 10 to eject process gas.
  • the plurality of ejection holes 13 are through holes penetrating the bottom surface of the inner space 111 and the bottom surface 102 of the base 10 . It should be noted that the plurality of ejection holes 13 do not necessarily need to be positioned on the lower surface 102 of the base 10, and may be positioned on the upper surface 101 of the base 10, for example.
  • the partition wall 20 has a plurality of introduction holes 21 that communicate the inner space 111 and the flow path 112 and introduce the process gas flowing through the flow path 112 into the inner space 111 .
  • the partition wall 20 separates the space 11 in the base body 10 into the inner space 111 and the flow channel 112 , and the inner space 111 and the flow channel 112 are separated by a plurality of partition walls 20 . are communicated by the introduction hole 21 of the That is, the partition wall 20 introduces the process gas from the flow path 112 into the inner space 111 through the plurality of introduction holes 21 while generating a pressure difference between the inner space 111 and the flow path 112 .
  • the diffusion of the process gas introduced into the inner space 111 is promoted as compared with the case where the space 11 in the base body 10 does not have the partition wall 20. uneven distribution of the process gas is less likely to occur. Specifically, when the process gas is introduced from the supply port 12 into the channel 112 , the pressure of the process gas in the channel 112 is increased by the partition wall 20 , so that the process gas is introduced from the channel 112 through the plurality of introduction holes 21 . , the flow velocity of the process gas introduced into the inner space 111 increases. Further, since the partition wall 20 has a plurality of introduction holes 21, the process gas is introduced into the inner space 111 from a plurality of directions.
  • the action of the partition wall 20 and the plurality of introduction holes 21 stirs the process gas in the inner space 111, and as a result, the process gas becomes more homogeneous in the inner space 111 where the plurality of ejection holes 13 are located. Therefore, according to the shower plate 1 of this embodiment, the uniformity of the process gas jetted from the plurality of jet holes 13 can be improved.
  • the partition 20 has an annular shape, and the plurality of introduction holes 21 are arranged side by side at intervals in the circumferential direction of the partition 20 . Specifically, the plurality of introduction holes 21 are positioned at regular intervals in the circumferential direction of the partition wall 20 .
  • the plurality of introduction holes 21 are inclined with respect to the radial direction of the partition wall 20 .
  • the plurality of introduction holes 21 are arranged in a direction toward an inner wall surface of the partition wall 20 facing the inner space 111 (that is, a direction approaching a tangent to the inner wall surface of the partition wall 20) with respect to the radial direction of the partition wall 20. leaning
  • the process gas introduced into the inner space 111 diffuses to the vicinity of the inner wall surface of the partition wall 20 , so that a swirl flow of the process gas can be generated along the inner wall surface of the partition wall 20 . Therefore, according to the shower plate 1 of the present embodiment, the process gas introduced into the inner space 111 can be agitated by the swirling flow, and the uniformity of the process gas ejected from the plurality of ejection holes 13 can be improved. can be improved.
  • the plurality of introduction holes 21 are located at positions that do not intersect the virtual line L extending along the central axis of the supply port 12 on the outer surface of the partition wall 20 facing the flow path 112 .
  • the plurality of introduction holes 21 are located at positions displaced in the circumferential direction of the partition 20 from positions intersecting the imaginary line L extending along the central axis of the supply port 12 on the outer surface of the partition 20 facing the flow path 112 . located in
  • the distance between the supply port 12 and the plurality of introduction holes 21 is greater than, for example, when the plurality of introduction holes 21 are located at positions that intersect the virtual line L, so that the flow path from the supply port 12 is increased.
  • the process gas supplied to 112 can be temporarily retained within the flow path 112 .
  • the pressure difference between the inner space 111 and the flow path 112 increases, and the process gas is introduced into the inner space 111 from the flow path 112 through the plurality of introduction holes 21. Diffusion of the process gas to be applied is promoted more. Therefore, according to the shower plate 1 according to the present embodiment, it is possible to further suppress uneven distribution of the process gas in the inner space 111 where the plurality of ejection holes 13 are located. The uniformity of the process gas can be further improved.
  • each of the plurality of ejection holes 13 is smaller than the cross-sectional area of each of the plurality of introduction holes 21 .
  • the cross-sectional area of each of the plurality of introduction holes 21 is smaller than the cross-sectional area of the supply port 12 .
  • the supply port 12, each of the plurality of introduction holes 21, and each of the plurality of ejection holes 13 are aligned in the flow direction of the process gas. The cross-sectional area becomes smaller in each order.
  • the holes through which the process gas passes can be narrowed in stages along the flow direction of the process gas. Therefore, according to the shower plate 1 of the present embodiment, the flow velocity of the process gas from the supply port 12 to the plurality of ejection holes 13 via the plurality of introduction holes 21 can be gradually increased. Process gas can be smoothly ejected from the ejection holes 13 .
  • the sum of the cross-sectional areas of the multiple ejection holes 13 is smaller than the sum of the cross-sectional areas of the multiple introduction holes 21 .
  • the total cross-sectional area of the plurality of introduction holes 21 is smaller than the total cross-sectional area of the supply port 12 .
  • the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 are the total sum of the cross-sectional areas in the order of the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 in the flow direction of the process gas. becomes smaller.
  • the holes through which the process gas passes can be narrowed in stages along the flow direction of the process gas. Therefore, according to the shower plate 1 of the present embodiment, the flow velocity of the process gas from the supply port 12 to the plurality of ejection holes 13 via the plurality of introduction holes 21 can be gradually increased. Process gas can be smoothly ejected from the ejection holes 13 .
  • the total number of the plurality of ejection holes 13 is greater than the total number of the plurality of introduction holes 21 . Also, the total number of the plurality of introduction holes 21 is greater than the total number of supply ports. In other words, the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 increase in the order of the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 in the flow direction of the process gas. .
  • the shower plate 1 of the present embodiment the flow velocity of the process gas from the supply port 12 to the plurality of ejection holes 13 via the plurality of introduction holes 21 can be gradually increased. Process gas can be smoothly ejected from the ejection holes 13 .
  • shower plate 1 is formed by stacking a plurality of ceramic green sheets. Specifically, a plurality of ceramic green sheets forming the substrate 10 are prepared. Here, a plurality of ceramic green sheets having different shapes are prepared to form the spaces 11, the supply ports 12, the ejection holes 13, and the partition walls 20. FIG. Then, a plurality of prepared ceramic green sheets are laminated.
  • the laminate of ceramic green sheets is degreased and fired.
  • the firing temperature is, for example, 1100° C. or higher and 1850° C. or lower. Thereby, the shower plate 1 is obtained.
  • FIG. 4 is a schematic cross-sectional plan view of the shower plate 1 according to Modification 1 of the first embodiment.
  • the plurality of introduction holes 21A have a tapered shape whose width decreases from the flow path 112 toward the inner space 111.
  • the plurality of introduction holes 21A have a tapered shape whose width decreases from the flow path 112 toward the inner space 111.
  • FIG. 5 is a schematic cross-sectional plan view of a shower plate 1 according to Modification 2 of the first embodiment.
  • the supply port 12A is inclined in the same direction as the plurality of introduction holes 21A. That is, the plurality of introduction holes 21A are inclined with respect to the radial direction of the partition wall 20 in a direction toward the inner wall surface of the partition wall 20 facing the inner space 111 (that is, in a direction approaching a tangent to the inner wall surface of the partition wall 20). . Therefore, the supply port 12A is arranged in a direction toward the inner wall surface of the substrate 10 facing the channel 112 (that is, a tangent to the inner wall surface of the substrate 10) with respect to the radial direction of the partition wall 20 (that is, the radial direction of the substrate 10). direction).
  • the flow direction of the process gas at the supply port 12A coincides with the flow direction of the process gas at the plurality of introduction holes 21A. It can flow smoothly into the hole 21A.
  • the plurality of introduction holes 21A do not cross the virtual line L extending along the central axis of the supply port 12A on the outer surface of the partition wall 20 facing the flow path 112. not located. Therefore, the process gas supplied from the supply port 12 ⁇ /b>A to the channel 112 can be temporarily retained in the channel 112 .
  • the supply port 12A may have a tapered shape in which the width decreases from the outside of the substrate 10 toward the channel 112 .
  • FIG. 6 is a schematic side sectional view of the shower plate 1 according to the second embodiment.
  • FIG. 7 is a schematic cross-sectional plan view of the shower plate 1 according to the second embodiment. 7 shows a schematic cross-sectional view taken along line VII--VII in FIG.
  • the shower plate 1 As shown in FIG. 6, the shower plate 1 according to this embodiment has a heating element 30 and an electrode 40 inside the base 10 .
  • the heating element 30 is positioned so as to overlap at least the inner space 111 in the thickness direction of the base 10 .
  • the heating element 30 is positioned overlapping the inner space 111 and the partition wall 20 in the thickness direction of the base 10 .
  • the heating element 30 may be positioned so as to overlap the inner space 111 , the partition wall 20 and the flow path 112 in the thickness direction of the base 10 .
  • the heating element 30 is positioned between the upper surface 101 of the base 10 and the inner space 111 .
  • the heating element 30 may be positioned between the lower surface 102 of the base 10 and the inner space 111 .
  • the heating element 30 generates heat by Joule heat generated by power supplied from a heater power supply (not shown).
  • the heating element 30 extends in layers along the upper surface 101 of the substrate 10 .
  • the heating element 30 has, for example, a disc shape in plan view.
  • the heating element 30 is made of, for example, metals such as nickel (Ni), tungsten (W), molybdenum (Mo) and platinum (Pt), or alloys containing at least one of the above metals.
  • the process gas can be heated in the inner space 111 by positioning the heating element 30 so as to overlap at least the inner space 111 in the thickness direction of the substrate 10 .
  • the base 10 when the heating element 30 overlaps at least the inner space 111 in the thickness direction of the base 10, the base 10 is arranged in the thickness direction of the base 10 so as to support the inner space 111, as shown in FIGS. There may be a plurality of struts 14 extending to the .
  • the heat of the heating element 30 is transmitted to the inner space 111 via the plurality of pillars 14, so that the process gas in the inner space 111 can be heated more efficiently. can.
  • the electrode 40 is positioned closer to the lower surface 102 of the base 10 than the inner space 111 is.
  • the electrode 40 is, for example, an electrode for plasma generation, and spreads in layers along the lower surface 102 of the substrate 10 .
  • the electrode 40 has, for example, a disk shape in a plan view, and has a plurality of through holes corresponding to the positions of the plurality of ejection holes 13 respectively.
  • the electrode 40 is made of, for example, metals such as nickel (Ni), tungsten (W), titanium (Ti), molybdenum (Mo) and platinum (Pt), or alloys containing at least one of the above metals.
  • a ceramic green sheet forming the base 10, a metal sheet forming the heating element 30, and a metal sheet forming the electrode 40 are prepared.
  • a plurality of ceramic green sheets having different shapes are prepared in order to form the spaces 11, the supply ports 12, the ejection holes 13, the partition walls 20, and the struts .
  • the prepared sheets are laminated.
  • the laminate of ceramic green sheets and metal sheets is degreased and fired.
  • the firing temperature is, for example, 1100° C. or higher and 1850° C. or lower.
  • the shower plate (eg, shower plate 1) according to the embodiment includes a substrate (eg, substrate 10), a partition wall (eg, partition wall 20), and supply ports (eg, supply ports 12 and 12A). , and a plurality of ejection holes (for example, ejection holes 13).
  • the substrate is a plate-like substrate made of ceramics and having a space (for example, space 11) inside.
  • the partition separates the space of the substrate into an inner space (eg, inner space 111) and a channel (eg, channel 112) located around the inner space.
  • the supply port supplies gas (eg, process gas) to the channel.
  • a plurality of ejection holes communicate with the inner space and open to one surface (for example, the lower surface 102) of the substrate to eject gas.
  • the partition wall has a plurality of introduction holes (for example, introduction holes 21 and 21A) for communicating the inner space and the channel and for introducing the gas flowing through the channel into the inner space.
  • the partition according to the embodiment may be annular, and the plurality of introduction holes may be arranged side by side at intervals in the circumferential direction of the partition.
  • the gas can be evenly introduced into the inner space along the circumferential direction of the partition wall.
  • the plurality of introduction holes according to the embodiment may be inclined with respect to the radial direction of the partition wall.
  • the shower plate according to the embodiment it is possible to further improve the uniformity of the gas ejected from the plurality of ejection holes.
  • the supply port according to the embodiment may be located on the side surface (for example, side surface 103) of the substrate and may be inclined in the same direction as the plurality of introduction holes.
  • the process gas supplied from the supply port to the channel can smoothly flow to the plurality of introduction holes.
  • the plurality of introduction holes according to the embodiment may have a tapered shape in which the width decreases from the flow path toward the inner space.
  • the shower plate according to the embodiment it is possible to further improve the uniformity of the gas ejected from the plurality of ejection holes.
  • the plurality of introduction holes according to the embodiment may be located at positions that do not intersect the virtual line extending along the central axis of the supply port on the outer wall surface of the partition facing the channel.
  • the shower plate according to the embodiment it is possible to further improve the uniformity of the gas ejected from the plurality of ejection holes.
  • the cross-sectional area of each of the plurality of ejection holes according to the embodiment may be smaller than the cross-sectional area of each of the plurality of introduction holes.
  • the cross-sectional area of each of the plurality of introduction holes may be smaller than the cross-sectional area of the supply port.
  • the sum of the cross-sectional areas of the plurality of ejection holes may be smaller than the sum of the cross-sectional areas of the plurality of introduction holes.
  • the sum of the cross-sectional areas of the plurality of introduction holes may be smaller than the sum of the cross-sectional areas of the supply ports.
  • the total number of the plurality of ejection holes may be greater than the total number of the plurality of introduction holes.
  • the total number of the plurality of introduction holes may be greater than the total number of supply ports.
  • the supply port according to the embodiment may have a tapered shape in which the width decreases from the outside of the base toward the channel.
  • the shower plate according to the embodiment may further include a heating element (for example, heating element 30) located inside the base so as to overlap at least the inner space in the thickness direction of the base.
  • a heating element for example, heating element 30 located inside the base so as to overlap at least the inner space in the thickness direction of the base.
  • the base according to the embodiment may have a plurality of struts (for example, struts 14) that support the inner space.
  • struts 14 for example, struts 14
  • the shower plate according to the embodiment may further include an electrode (for example, electrode 40) located inside the base at a position closer to one surface of the base than the inner space.
  • an electrode for example, electrode 40 located inside the base at a position closer to one surface of the base than the inner space.

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Abstract

Provided is a shower plate including a substrate, a partition, a supply port, and a plurality of jetting holes. The substrate is formed of ceramic and is a plate-like substrate having a space in the interior thereof. The partition separates the space of the substrate into an inner space and a flow channel positioned in the periphery of the inner space. The supply port supplies the flow channel with a gas. The plurality of jetting holes are in communication with the inner space so as to open in one surface of the substrate, and the gas is jetted therefrom. Also, the partition has a plurality of introduction holes that communicate the inner space and the flow channel and from which the gas flowing in the flow channel is introduced into the inner space.

Description

シャワープレートshower plate
　開示の実施形態は、シャワープレートに関する。 The disclosed embodiments relate to shower plates.
　従来、例えば半導体の製造工程において半導体ウエハ等の基板に対してプロセスガスを噴出するシャワーヘッドが用いられている。このようなシャワープレートとしては、例えば、セラミックスからなり、内部に空間を有する円板状の基体と、基体の一面に開口し、基体内の空間に導入されるガスを噴出する複数の噴出孔とを有するシャワープレートが知られている（特許文献１参照）。 Conventionally, for example, in a semiconductor manufacturing process, a shower head that ejects process gas onto a substrate such as a semiconductor wafer has been used. Such a shower plate includes, for example, a disk-shaped substrate made of ceramics and having a space inside, and a plurality of ejection holes that are open on one surface of the substrate and eject gas introduced into the space inside the substrate. is known (see Patent Document 1).
特許第５８２６３５３号公報Japanese Patent No. 5826353
　実施形態の一態様によるシャワープレートは、基体と、隔壁と、供給口と、複数の噴出孔とを備える。基体は、セラミックスからなり、内部に空間を有する板状の基体である。隔壁は、基体の空間を内側空間と内側空間の周囲に位置する流路とに隔てる。供給口は、流路にガスを供給する。複数の噴出孔は、内側空間に連通して基体の一面に開口し、ガスを噴出する。そして、隔壁は、内側空間と流路とを連通し、流路を流れるガスを内側空間に導入する複数の導入孔を有する。 A shower plate according to one aspect of the embodiment includes a base, partition walls, supply ports, and a plurality of ejection holes. The substrate is a plate-like substrate made of ceramics and having a space inside. The partition separates the space of the substrate into an inner space and a channel located around the inner space. The supply port supplies gas to the channel. A plurality of ejection holes communicate with the inner space and open to one surface of the substrate to eject gas. The partition wall has a plurality of introduction holes for communicating the inner space and the channel and for introducing the gas flowing through the channel into the inner space.
図１は、第１実施形態に係るシャワープレートの模式的な斜視図である。FIG. 1 is a schematic perspective view of a shower plate according to the first embodiment. FIG. 図２は、第１実施形態に係るシャワープレートの模式的な側断面図である。FIG. 2 is a schematic side cross-sectional view of the shower plate according to the first embodiment. 図３は、第１実施形態に係るシャワープレートの模式的な平断面図である。FIG. 3 is a schematic cross-sectional plan view of the shower plate according to the first embodiment. 図４は、第１実施形態の変形例１に係るシャワープレートの模式的な平断面図である。FIG. 4 is a schematic cross-sectional plan view of a shower plate according to Modification 1 of the first embodiment. 図５は、第１実施形態の変形例２に係るシャワープレートの模式的な平断面図である。FIG. 5 is a schematic cross-sectional plan view of a shower plate according to Modification 2 of the first embodiment. 図６は、第２実施形態に係るシャワープレートの模式的な側断面図である。FIG. 6 is a schematic side sectional view of the shower plate according to the second embodiment. 図７は、第２実施形態に係るシャワープレートの模式的な平断面図である。FIG. 7 is a schematic cross-sectional plan view of the shower plate according to the second embodiment.
　以下、添付図面を参照して、本願の開示するシャワープレートの実施形態について説明する。なお、以下に示す実施形態により本開示が限定されるものではない。また、図面は模式的なものであり、各要素の寸法の関係、各要素の比率などは、現実と異なる場合があることに留意する必要がある。さらに、図面の相互間においても、互いの寸法の関係や比率が異なる部分が含まれている場合がある。 Embodiments of the shower plate disclosed in the present application will be described below with reference to the accompanying drawings. It should be noted that the present disclosure is not limited by the embodiments shown below. Also, it should be noted that the drawings are schematic, and the relationship of dimensions of each element, the ratio of each element, and the like may differ from reality. Furthermore, even between the drawings, there are cases where portions having different dimensional relationships and ratios are included.
　また、以下に示す実施形態では、「一定」、「直交」、「垂直」あるいは「平行」といった表現が用いられる場合があるが、これらの表現は、厳密に「一定」、「直交」、「垂直」あるいは「平行」であることを要しない。すなわち、上記した各表現は、たとえば製造精度、設置精度などのずれを許容するものとする。 Further, in the embodiments described below, expressions such as "constant", "perpendicular", "perpendicular" or "parallel" may be used, but these expressions are strictly "constant", "perpendicular", " It does not have to be "perpendicular" or "parallel". That is, each of the expressions described above allows deviations in, for example, manufacturing accuracy and installation accuracy.
　また、各実施形態は、処理内容を矛盾させない範囲で適宜組み合わせることが可能である。また、以下の各実施形態において同一の部位には同一の符号を付し、重複する説明は省略される。 In addition, each embodiment can be appropriately combined within a range that does not contradict the processing content. Also, in each of the following embodiments, the same parts are denoted by the same reference numerals, and overlapping descriptions are omitted.
（第１実施形態）
　図１は、第１実施形態に係るシャワープレート１の模式的な斜視図である。図２は、第１実施形態に係るシャワープレート１の模式的な側断面図である。図３は、第１実施形態に係るシャワープレート１の模式的な平断面図である。なお、図３には、図２におけるＩＩＩ－ＩＩＩ線矢視における模式的な断面図を示している。 (First embodiment)
FIG. 1 is a schematic perspective view of a shower plate 1 according to the first embodiment. FIG. 2 is a schematic side sectional view of the shower plate 1 according to the first embodiment. FIG. 3 is a schematic cross-sectional plan view of the shower plate 1 according to the first embodiment. 3 shows a schematic cross-sectional view taken along line III-III in FIG.
　図１に示す第１実施形態に係るシャワープレート１は、例えば半導体の製造工程において半導体ウエハ等の基板に対してプロセスガスを噴出する。シャワープレート１は、例えば、基板に対してプラズマ処理等を行う基板処理装置に搭載される。 A shower plate 1 according to the first embodiment shown in FIG. 1 ejects process gas onto a substrate such as a semiconductor wafer in, for example, a semiconductor manufacturing process. The shower plate 1 is mounted, for example, in a substrate processing apparatus that performs plasma processing or the like on substrates.
　図１及び図２に示すように、シャワープレート１は、基体１０を有する。基体１０は、例えば、上下方向に厚みがある円板形状を有する。具体的には、基体１０は、平面視円形の上面１０１および下面１０２と、これら上面１０１および下面１０２を繋ぐ側面１０３とを有する。基体１０の上面１０１と下面１０２とは、略平行である。シャワープレート１が基板処理装置に搭載される場合、基体１０の下面１０２は、基板支持台に支持される基板と対向する。 As shown in FIGS. 1 and 2, the shower plate 1 has a base 10. As shown in FIG. The substrate 10 has, for example, a disk shape with a thickness in the vertical direction. Specifically, the base 10 has an upper surface 101 and a lower surface 102 which are circular in plan view, and a side surface 103 connecting the upper surface 101 and the lower surface 102 . The upper surface 101 and the lower surface 102 of the substrate 10 are substantially parallel. When the shower plate 1 is mounted on a substrate processing apparatus, the lower surface 102 of the substrate 10 faces the substrate supported by the substrate support.
　基体１０は、例えばセラミックスからなり、絶縁性を有する。基体１０を構成するセラミックスは、例えば、窒化アルミニウム（ＡｌＮ）、酸化アルミニウム（Ａｌ２Ｏ３、アルミナ）、酸化イットリウム（Ｙ２Ｏ３、イットリア）、炭化珪素（ＳｉＣ）、窒化珪素（Ｓｉ３Ｎ４）等を主成分とする焼結体である。なお、主成分は、たとえば、その材料の５０質量％以上または８０質量％以上を占める材料である。 The substrate 10 is made of ceramics, for example, and has insulating properties. Ceramics constituting the substrate 10 are, for example, aluminum nitride (AlN), aluminum oxide (Al 2 O 3 , alumina), yttrium oxide (Y 2 O 3 , yttria), silicon carbide (SiC), silicon nitride (Si 3 N 4 ), etc. as a main component. In addition, the main component is, for example, a material that accounts for 50% by mass or more or 80% by mass or more of the material.
　なお、基体１０の形状は任意である。例えば、本実施形態において、基体１０は、円板形状であるが、これに限らず、楕円板形状、矩形板形状、台形板形状などであってもよい。 The shape of the substrate 10 is arbitrary. For example, in the present embodiment, the substrate 10 has a disk shape, but it is not limited to this, and may have an elliptical plate shape, a rectangular plate shape, a trapezoidal plate shape, or the like.
　基体１０の内部には、空間１１が設けられる。基体１０の空間１１には、基体１０の空間１１を内側空間１１１と内側空間１１１の周囲に位置する流路１１２とに隔てる隔壁２０が位置している。 A space 11 is provided inside the base 10 . A partition wall 20 is located in the space 11 of the base body 10 and separates the space 11 of the base body 10 into an inner space 111 and a flow path 112 positioned around the inner space 111 .
　また、シャワープレート１は、供給口１２と、複数の噴出孔１３とを有する。供給口１２は、基体１０の側面１０３に位置し、流路１１２に連通するとともに、図示しないガス供給管などを介してプロセスガス供給源に接続される。図２の例において、供給口１２は、基体１０の側面１０３および流路１１２の外側面を基体１０の径方向に貫通する貫通孔である。プロセスガス供給源から供給されるプロセスガスは、ガス供給管を介して供給口１２に導入される。そして、供給口１２は、導入されるプロセスガスを流路１１２に供給する。なお、供給口１２は、必ずしも基体１０の側面１０３に位置しなくてもよく、例えば、基体１０の上面１０１または下面１０２に位置してもよい。また、供給口１２の数は、任意であり、１つの供給口１２が基体１０に設けられてもよく、複数の供給口１２が基体１０に設けられてもよい。例えば、図２及び図３では、基体１０の側面１０３に位置する２つの供給口１２が示されている。 Also, the shower plate 1 has a supply port 12 and a plurality of ejection holes 13 . The supply port 12 is positioned on the side surface 103 of the substrate 10, communicates with the flow path 112, and is connected to a process gas supply source via a gas supply pipe (not shown) or the like. In the example of FIG. 2 , the supply port 12 is a through hole penetrating the side surface 103 of the substrate 10 and the outer surface of the channel 112 in the radial direction of the substrate 10 . A process gas supplied from a process gas supply source is introduced into the supply port 12 through a gas supply pipe. The supply port 12 supplies the introduced process gas to the flow path 112 . The supply port 12 does not necessarily have to be positioned on the side surface 103 of the substrate 10, and may be positioned on the upper surface 101 or the lower surface 102 of the substrate 10, for example. Moreover, the number of supply ports 12 is arbitrary, and one supply port 12 may be provided in the base 10 , or a plurality of supply ports 12 may be provided in the base 10 . For example, in FIGS. 2 and 3, two supply ports 12 located on side surfaces 103 of substrate 10 are shown.
　複数の噴出孔１３は、内側空間１１１に連通して基体１０の下面１０２に開口し、プロセスガスを噴出する。図２の例において、複数の噴出孔１３は、内側空間１１１の底面および基体１０の下面１０２を貫通する貫通孔である。なお、複数の噴出孔１３は、必ずしも基体１０の下面１０２に位置する必要はなく、例えば、基体１０の上面１０１に位置してもよい。 A plurality of ejection holes 13 communicate with the inner space 111 and open to the lower surface 102 of the substrate 10 to eject process gas. In the example of FIG. 2 , the plurality of ejection holes 13 are through holes penetrating the bottom surface of the inner space 111 and the bottom surface 102 of the base 10 . It should be noted that the plurality of ejection holes 13 do not necessarily need to be positioned on the lower surface 102 of the base 10, and may be positioned on the upper surface 101 of the base 10, for example.
　図３に示すように、隔壁２０は、内側空間１１１と流路１１２とを連通し、流路１１２を流れるプロセスガスを内側空間１１１に導入する複数の導入孔２１を有する。 As shown in FIG. 3 , the partition wall 20 has a plurality of introduction holes 21 that communicate the inner space 111 and the flow path 112 and introduce the process gas flowing through the flow path 112 into the inner space 111 .
　このように、本実施形態に係るシャワープレート１において、隔壁２０は、基体１０内の空間１１を内側空間１１１と流路１１２とに隔て、且つ内側空間１１１と流路１１２とは隔壁２０の複数の導入孔２１によって連通される。すなわち、隔壁２０は、内側空間１１１と流路１１２との間に圧力差を発生させながら、流路１１２から複数の導入孔２１を介して内側空間１１１にプロセスガスを導入する。 As described above, in the shower plate 1 according to the present embodiment, the partition wall 20 separates the space 11 in the base body 10 into the inner space 111 and the flow channel 112 , and the inner space 111 and the flow channel 112 are separated by a plurality of partition walls 20 . are communicated by the introduction hole 21 of the That is, the partition wall 20 introduces the process gas from the flow path 112 into the inner space 111 through the plurality of introduction holes 21 while generating a pressure difference between the inner space 111 and the flow path 112 .
　この構成により、例えば、基体１０内の空間１１に隔壁２０が無い場合と比べて内側空間１１１に導入されるプロセスガスの拡散が促進されるため、複数の噴出孔１３が位置する内側空間１１１でのプロセスガスの偏在が発生しにくくなる。具体的には、供給口１２から流路１１２にプロセスガスが導入される際に、隔壁２０によって流路１１２内のプロセスガスの圧力が高まることから、流路１１２から複数の導入孔２１を介して内側空間１１１に導入されるプロセスガスの流速が上がる。また、隔壁２０に導入孔２１が複数あることから、プロセスガスが内側空間１１１に複数の方向から導入される。かかる隔壁２０および複数の導入孔２１の作用により、内側空間１１１においてプロセスガスが攪拌され、結果として、複数の噴出孔１３が位置する内側空間１１１においてプロセスガスがより均質になる。したがって、本実施形態に係るシャワープレート１によれば、複数の噴出孔１３から噴出されるプロセスガスの均一性を向上させることができる。 With this configuration, for example, the diffusion of the process gas introduced into the inner space 111 is promoted as compared with the case where the space 11 in the base body 10 does not have the partition wall 20. uneven distribution of the process gas is less likely to occur. Specifically, when the process gas is introduced from the supply port 12 into the channel 112 , the pressure of the process gas in the channel 112 is increased by the partition wall 20 , so that the process gas is introduced from the channel 112 through the plurality of introduction holes 21 . , the flow velocity of the process gas introduced into the inner space 111 increases. Further, since the partition wall 20 has a plurality of introduction holes 21, the process gas is introduced into the inner space 111 from a plurality of directions. The action of the partition wall 20 and the plurality of introduction holes 21 stirs the process gas in the inner space 111, and as a result, the process gas becomes more homogeneous in the inner space 111 where the plurality of ejection holes 13 are located. Therefore, according to the shower plate 1 of this embodiment, the uniformity of the process gas jetted from the plurality of jet holes 13 can be improved.
　また、隔壁２０は、円環状であり、複数の導入孔２１は、隔壁２０の周方向に間隔を空けて並んで位置している。具体的には、複数の導入孔２１は、隔壁２０の周方向に等間隔で位置している。 In addition, the partition 20 has an annular shape, and the plurality of introduction holes 21 are arranged side by side at intervals in the circumferential direction of the partition 20 . Specifically, the plurality of introduction holes 21 are positioned at regular intervals in the circumferential direction of the partition wall 20 .
　この構成により、隔壁２０の周方向に沿って内側空間１１１と流路１１２との間の圧力差の分布が均等化され、プロセスガスを隔壁２０の周方向に沿って内側空間１１１に均等に導入することができる。 With this configuration, the distribution of the pressure difference between the inner space 111 and the flow path 112 is equalized along the circumferential direction of the partition wall 20, and the process gas is evenly introduced into the inner space 111 along the circumferential direction of the partition wall 20. can do.
　また、複数の導入孔２１は、隔壁２０の径方向に対して傾いている。具体的には、複数の導入孔２１は、隔壁２０の径方向に対して、隔壁２０の内側空間１１１に面する内壁面へ向かう方向（つまり、隔壁２０の内壁面の接線に近づく方向）に傾いている。 Also, the plurality of introduction holes 21 are inclined with respect to the radial direction of the partition wall 20 . Specifically, the plurality of introduction holes 21 are arranged in a direction toward an inner wall surface of the partition wall 20 facing the inner space 111 (that is, a direction approaching a tangent to the inner wall surface of the partition wall 20) with respect to the radial direction of the partition wall 20. leaning
　この構成により、内側空間１１１に導入されるプロセスガスが隔壁２０の内壁面近傍まで拡散することから、隔壁２０の内壁面に沿ってプロセスガスの旋回流を発生させることができる。このため、本実施形態に係るシャワープレート１によれば、内側空間１１１に導入されるプロセスガスを旋回流によって撹拌することができ、複数の噴出孔１３から噴出されるプロセスガスの均一性をより向上させることができる。 With this configuration, the process gas introduced into the inner space 111 diffuses to the vicinity of the inner wall surface of the partition wall 20 , so that a swirl flow of the process gas can be generated along the inner wall surface of the partition wall 20 . Therefore, according to the shower plate 1 of the present embodiment, the process gas introduced into the inner space 111 can be agitated by the swirling flow, and the uniformity of the process gas ejected from the plurality of ejection holes 13 can be improved. can be improved.
　また、複数の導入孔２１は、隔壁２０の流路１１２に面する外側面において、供給口１２の中心軸沿いに延びる仮想線Ｌとは交差しない位置に位置している。換言すれば、複数の導入孔２１は、隔壁２０の流路１１２に面する外側面において、供給口１２の中心軸沿いに延びる仮想線Ｌと交差する位置から隔壁２０の周方向にずれた位置に位置している。 In addition, the plurality of introduction holes 21 are located at positions that do not intersect the virtual line L extending along the central axis of the supply port 12 on the outer surface of the partition wall 20 facing the flow path 112 . In other words, the plurality of introduction holes 21 are located at positions displaced in the circumferential direction of the partition 20 from positions intersecting the imaginary line L extending along the central axis of the supply port 12 on the outer surface of the partition 20 facing the flow path 112 . located in
　この構成により、例えば、複数の導入孔２１が仮想線Ｌと交差する位置に位置している場合と比べて供給口１２と複数の導入孔２１との距離が離れるため、供給口１２から流路１１２に供給されたプロセスガスを流路１１２内に一時的に滞留させることができる。流路１１２内にプロセスガスが一時的に滞留することで、内側空間１１１と流路１１２との間の圧力差が増大し、流路１１２から複数の導入孔２１を介して内側空間１１１に導入されるプロセスガスの拡散がより促進される。このため、本実施形態に係るシャワープレート１によれば、複数の噴出孔１３が位置する内側空間１１１でのプロセスガスの偏在の発生をより抑制することができ、複数の噴出孔１３から噴出されるプロセスガスの均一性をより向上させることができる。 With this configuration, the distance between the supply port 12 and the plurality of introduction holes 21 is greater than, for example, when the plurality of introduction holes 21 are located at positions that intersect the virtual line L, so that the flow path from the supply port 12 is increased. The process gas supplied to 112 can be temporarily retained within the flow path 112 . As the process gas temporarily stays in the flow path 112, the pressure difference between the inner space 111 and the flow path 112 increases, and the process gas is introduced into the inner space 111 from the flow path 112 through the plurality of introduction holes 21. Diffusion of the process gas to be applied is promoted more. Therefore, according to the shower plate 1 according to the present embodiment, it is possible to further suppress uneven distribution of the process gas in the inner space 111 where the plurality of ejection holes 13 are located. The uniformity of the process gas can be further improved.
　また、複数の噴出孔１３の各々の断面積は、複数の導入孔２１の各々の断面積よりも小さい。また、複数の導入孔２１の各々の断面積は、供給口１２の断面積よりも小さい。換言すれば、供給口１２、複数の導入孔２１の各々および複数の噴出孔１３の各々は、プロセスガスの流れ方向に、供給口１２、複数の導入孔２１の各々および複数の噴出孔１３の各々の順番で断面積が小さくなる。 Also, the cross-sectional area of each of the plurality of ejection holes 13 is smaller than the cross-sectional area of each of the plurality of introduction holes 21 . Also, the cross-sectional area of each of the plurality of introduction holes 21 is smaller than the cross-sectional area of the supply port 12 . In other words, the supply port 12, each of the plurality of introduction holes 21, and each of the plurality of ejection holes 13 are aligned in the flow direction of the process gas. The cross-sectional area becomes smaller in each order.
　この構成により、プロセスガスの流れ方向に沿ってプロセスガスが通過する孔を段階的に絞ることができる。このため、本実施形態に係るシャワープレート１によれば、供給口１２から複数の導入孔２１を経由して複数の噴出孔１３へ向かうプロセスガスの流速を徐々に上昇させることができ、複数の噴出孔１３からプロセスガスをスムーズに噴出することができる。 With this configuration, the holes through which the process gas passes can be narrowed in stages along the flow direction of the process gas. Therefore, according to the shower plate 1 of the present embodiment, the flow velocity of the process gas from the supply port 12 to the plurality of ejection holes 13 via the plurality of introduction holes 21 can be gradually increased. Process gas can be smoothly ejected from the ejection holes 13 .
　また、複数の噴出孔１３の断面積の総和は、複数の導入孔２１の断面積の総和よりも小さい。また、複数の導入孔２１の断面積の総和は、供給口１２の断面積の総和よりも小さい。換言すれば、供給口１２、複数の導入孔２１および複数の噴出孔１３は、プロセスガスの流れ方向に、供給口１２、複数の導入孔２１および複数の噴出孔１３の順番で断面積の総和が小さくなる。 Also, the sum of the cross-sectional areas of the multiple ejection holes 13 is smaller than the sum of the cross-sectional areas of the multiple introduction holes 21 . Also, the total cross-sectional area of the plurality of introduction holes 21 is smaller than the total cross-sectional area of the supply port 12 . In other words, the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 are the total sum of the cross-sectional areas in the order of the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 in the flow direction of the process gas. becomes smaller.
　この構成により、プロセスガスの流れ方向に沿ってプロセスガスが通過する孔を段階的に絞ることができる。このため、本実施形態に係るシャワープレート１によれば、供給口１２から複数の導入孔２１を経由して複数の噴出孔１３へ向かうプロセスガスの流速を徐々に上昇させることができ、複数の噴出孔１３からプロセスガスをスムーズに噴出することができる。 With this configuration, the holes through which the process gas passes can be narrowed in stages along the flow direction of the process gas. Therefore, according to the shower plate 1 of the present embodiment, the flow velocity of the process gas from the supply port 12 to the plurality of ejection holes 13 via the plurality of introduction holes 21 can be gradually increased. Process gas can be smoothly ejected from the ejection holes 13 .
　また、複数の噴出孔１３の総数は、複数の導入孔２１の総数よりも多い。また、複数の導入孔２１の総数は、供給口の総数よりも多い。換言すれば、供給口１２、複数の導入孔２１および複数の噴出孔１３は、プロセスガスの流れ方向に、供給口１２、複数の導入孔２１および複数の噴出孔１３の順番で総数が多くなる。 Also, the total number of the plurality of ejection holes 13 is greater than the total number of the plurality of introduction holes 21 . Also, the total number of the plurality of introduction holes 21 is greater than the total number of supply ports. In other words, the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 increase in the order of the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 in the flow direction of the process gas. .
　この構成により、プロセスガスの流れ方向に沿ってプロセスガスが通過する孔の総数を段階的に増やすことができる。このため、本実施形態に係るシャワープレート１によれば、供給口１２から複数の導入孔２１を経由して複数の噴出孔１３へ向かうプロセスガスの流速を徐々に上昇させることができ、複数の噴出孔１３からプロセスガスをスムーズに噴出することができる。 With this configuration, the total number of holes through which the process gas passes can be increased in stages along the flow direction of the process gas. Therefore, according to the shower plate 1 of the present embodiment, the flow velocity of the process gas from the supply port 12 to the plurality of ejection holes 13 via the plurality of introduction holes 21 can be gradually increased. Process gas can be smoothly ejected from the ejection holes 13 .
（シャワープレートの製造方法）
　次に、本実施形態に係るシャワープレート１の製造方法の一例について説明する。シャワープレート１は、複数のセラミックグリーンシートを積層することによって形成される。具体的には、基体１０を構成する複数のセラミックグリーンシートを用意する。ここで、空間１１、供給口１２、噴出孔１３および隔壁２０を形成するために、形状が異なる複数のセラミックグリーンシートが用意される。そして、用意した複数のセラミックグリーンシートを積層する。 (Manufacturing method of shower plate)
Next, an example of a method for manufacturing the shower plate 1 according to this embodiment will be described. Shower plate 1 is formed by stacking a plurality of ceramic green sheets. Specifically, a plurality of ceramic green sheets forming the substrate 10 are prepared. Here, a plurality of ceramic green sheets having different shapes are prepared to form the spaces 11, the supply ports 12, the ejection holes 13, and the partition walls 20. FIG. Then, a plurality of prepared ceramic green sheets are laminated.
　つづいて、セラミックグリーンシートの積層体を脱脂および焼成する。焼成温度は、例えば１１００℃以上１８５０℃以下の温度である。これにより、シャワープレート１が得られる。 Subsequently, the laminate of ceramic green sheets is degreased and fired. The firing temperature is, for example, 1100° C. or higher and 1850° C. or lower. Thereby, the shower plate 1 is obtained.
（第１実施形態の変形例）
　上述した第１実施形態では、複数の導入孔２１が均一な幅を有する直線形状である場合の例について説明したが、複数の導入孔２１は、直線形状以外の形状を有してもよい。かかる場合の例について図４を参照して説明する。図４は、第１実施形態の変形例１に係るシャワープレート１の模式的な平断面図である。 (Modified example of the first embodiment)
In the first embodiment described above, an example in which the plurality of introduction holes 21 have a linear shape with a uniform width has been described, but the plurality of introduction holes 21 may have a shape other than a linear shape. An example of such a case will be described with reference to FIG. FIG. 4 is a schematic cross-sectional plan view of the shower plate 1 according to Modification 1 of the first embodiment.
　例えば、図４に示すように、複数の導入孔２１Ａは、流路１１２から内側空間１１１へ向かうにつれて幅が小さくなるテーパ形状を有する。 For example, as shown in FIG. 4, the plurality of introduction holes 21A have a tapered shape whose width decreases from the flow path 112 toward the inner space 111. For example, as shown in FIG.
　この構成により、複数の導入孔２１Ａの流路１１２側に位置する入口と内側空間１１１側に位置する出口との間の圧力差が増大するため、流路１１２から複数の導入孔２１Ａを介して内側空間１１１に導入されるプロセスガスの拡散がより促進される。このため、複数の噴出孔１３が位置する内側空間１１１でのプロセスガスの偏在の発生をより抑制することができ、複数の噴出孔１３から噴出されるプロセスガスの均一性をより向上させることができる。 With this configuration, the pressure difference between the inlets located on the channel 112 side and the outlets located on the inner space 111 side of the plurality of introduction holes 21A increases, so that the pressure from the channel 112 through the plurality of introduction holes 21A increases. Diffusion of the process gas introduced into the inner space 111 is further promoted. Therefore, uneven distribution of the process gas in the inner space 111 where the plurality of ejection holes 13 are located can be further suppressed, and the uniformity of the process gas ejected from the plurality of ejection holes 13 can be further improved. can.
　また、上述した第１実施形態では、供給口１２が基体１０の側面１０３に位置し、基体１０の径方向に沿って直線状に延びる場合の例について説明したが、供給口１２は、基体１０の径方向に対して傾いていてもよい。かかる場合の例について図５を参照して説明する。図５は、第１実施形態の変形例２に係るシャワープレート１の模式的な平断面図である。 Further, in the above-described first embodiment, an example in which the supply port 12 is positioned on the side surface 103 of the base 10 and extends linearly along the radial direction of the base 10 has been described. may be inclined with respect to the radial direction of An example of such a case will be described with reference to FIG. FIG. 5 is a schematic cross-sectional plan view of a shower plate 1 according to Modification 2 of the first embodiment.
　例えば、図５に示すように、供給口１２Ａは、複数の導入孔２１Ａが傾く方向と同じ方向に傾いている。すなわち、複数の導入孔２１Ａは、隔壁２０の径方向に対して、隔壁２０の内側空間１１１に面する内壁面へ向かう方向（つまり、隔壁２０の内壁面の接線に近づく方向）に傾いている。このため、供給口１２Ａは、隔壁２０の径方向（つまり、基体１０の径方向）に対して、基体１０の流路１１２に面する内壁面へ向かう方向（つまり、基体１０の内壁面の接線に近づく方向）に傾いている。 For example, as shown in FIG. 5, the supply port 12A is inclined in the same direction as the plurality of introduction holes 21A. That is, the plurality of introduction holes 21A are inclined with respect to the radial direction of the partition wall 20 in a direction toward the inner wall surface of the partition wall 20 facing the inner space 111 (that is, in a direction approaching a tangent to the inner wall surface of the partition wall 20). . Therefore, the supply port 12A is arranged in a direction toward the inner wall surface of the substrate 10 facing the channel 112 (that is, a tangent to the inner wall surface of the substrate 10) with respect to the radial direction of the partition wall 20 (that is, the radial direction of the substrate 10). direction).
　この構成により、供給口１２Ａでのプロセスガスの流れ方向と複数の導入孔２１Ａでのプロセスガスの流れ方向とが一致するため、供給口１２Ａから流路１１２に供給されるプロセスガスを複数の導入孔２１Ａへスムーズに流すことができる。 With this configuration, the flow direction of the process gas at the supply port 12A coincides with the flow direction of the process gas at the plurality of introduction holes 21A. It can flow smoothly into the hole 21A.
　なお、供給口１２Ａが傾いている場合であっても、複数の導入孔２１Ａは、隔壁２０の流路１１２に面する外側面において、供給口１２Ａの中心軸沿いに延びる仮想線Ｌとは交差しない位置に位置している。このため、供給口１２Ａから流路１１２に供給されたプロセスガスを流路１１２内に一時的に滞留させることができる。 Note that even when the supply port 12A is inclined, the plurality of introduction holes 21A do not cross the virtual line L extending along the central axis of the supply port 12A on the outer surface of the partition wall 20 facing the flow path 112. not located. Therefore, the process gas supplied from the supply port 12</b>A to the channel 112 can be temporarily retained in the channel 112 .
　また、供給口１２Ａは、基体１０の外部から流路１１２へ向かうにつれて幅が小さくなるテーパ形状を有してもよい。 Also, the supply port 12A may have a tapered shape in which the width decreases from the outside of the substrate 10 toward the channel 112 .
　この構成により、供給口１２Ａの基体１０の外部側に位置する入口と流路１１２側に位置する出口との間の圧力差が増大するため、供給口１２Ａから流路１１２に供給されるプロセスガスの拡散が促進される。このため、流路１１２でのプロセスガスの偏在の発生を抑制することができる。 With this configuration, the pressure difference between the inlet of the supply port 12A located outside the substrate 10 and the outlet located on the channel 112 side increases, so that the process gas supplied from the supply port 12A to the channel 112 increases. diffusion is promoted. Therefore, uneven distribution of the process gas in the flow path 112 can be suppressed.
（第２実施形態）
　図６は、第２実施形態に係るシャワープレート１の模式的な側断面図である。図７は、第２実施形態に係るシャワープレート１の模式的な平断面図である。なお、図７には、図６におけるＶＩＩ－ＶＩＩ線矢視における模式的な断面図を示している。 (Second embodiment)
FIG. 6 is a schematic side sectional view of the shower plate 1 according to the second embodiment. FIG. 7 is a schematic cross-sectional plan view of the shower plate 1 according to the second embodiment. 7 shows a schematic cross-sectional view taken along line VII--VII in FIG.
　図６に示すように、本実施形態に係るシャワープレート１は、基体１０の内部に発熱体３０および電極４０を有する。 As shown in FIG. 6, the shower plate 1 according to this embodiment has a heating element 30 and an electrode 40 inside the base 10 .
　発熱体３０は、基体１０の厚み方向に少なくとも内側空間１１１と重なって位置している。図６の例においては、発熱体３０は、基体１０の厚み方向に内側空間１１１および隔壁２０と重なって位置している。なお、発熱体３０は、基体１０の厚み方向に内側空間１１１、隔壁２０および流路１１２と重なって位置してもよい。また、発熱体３０は、基体１０の上面１０１と内側空間１１１との間に位置している。なお、発熱体３０は、基体１０の下面１０２と内側空間１１１との間に位置してもよい。 The heating element 30 is positioned so as to overlap at least the inner space 111 in the thickness direction of the base 10 . In the example of FIG. 6, the heating element 30 is positioned overlapping the inner space 111 and the partition wall 20 in the thickness direction of the base 10 . Note that the heating element 30 may be positioned so as to overlap the inner space 111 , the partition wall 20 and the flow path 112 in the thickness direction of the base 10 . Also, the heating element 30 is positioned between the upper surface 101 of the base 10 and the inner space 111 . Note that the heating element 30 may be positioned between the lower surface 102 of the base 10 and the inner space 111 .
　発熱体３０は、図示しないヒータ電源から供給される電力によって生じるジュール熱により発熱する。発熱体３０は、基体１０の上面１０１に沿って層状に広がっている。発熱体３０は、例えば平面視において円板形状を有する。 The heating element 30 generates heat by Joule heat generated by power supplied from a heater power supply (not shown). The heating element 30 extends in layers along the upper surface 101 of the substrate 10 . The heating element 30 has, for example, a disc shape in plan view.
　発熱体３０は、たとえば、ニッケル（Ｎｉ）、タングステン（Ｗ）、モリブデン（Ｍｏ）および白金（Ｐｔ）等の金属、または、上記金属の少なくとも１つを含む合金からなる。 The heating element 30 is made of, for example, metals such as nickel (Ni), tungsten (W), molybdenum (Mo) and platinum (Pt), or alloys containing at least one of the above metals.
　発熱体３０を基体１０の厚み方向に少なくとも内側空間１１１と重なって位置させることにより、内側空間１１１においてプロセスガスを加熱することができる。 The process gas can be heated in the inner space 111 by positioning the heating element 30 so as to overlap at least the inner space 111 in the thickness direction of the substrate 10 .
　また、発熱体３０が基体１０の厚み方向に少なくとも内側空間１１１と重なって位置する場合、基体１０は、図６および図７に示すように、内側空間１１１を支持するように基体１０の厚み方向に延びる複数の支柱１４を有してもよい。 6 and 7, when the heating element 30 overlaps at least the inner space 111 in the thickness direction of the base 10, the base 10 is arranged in the thickness direction of the base 10 so as to support the inner space 111, as shown in FIGS. There may be a plurality of struts 14 extending to the .
　複数の支柱１４で内側空間１１１を適切に支持することにより、発熱体３０の熱が複数の支柱１４を介して内側空間１１１に伝わるため、内側空間１１１においてプロセスガスをより効率よく加熱することができる。 By appropriately supporting the inner space 111 with the plurality of pillars 14, the heat of the heating element 30 is transmitted to the inner space 111 via the plurality of pillars 14, so that the process gas in the inner space 111 can be heated more efficiently. can.
　電極４０は、内側空間１１１よりも基体１０の下面１０２に近い位置に位置している。電極４０は、例えばプラズマ生成用の電極であり、基体１０の下面１０２に沿って層状に広がっている。電極４０は、例えば平面視において円板形状を有し、複数の噴出孔１３の位置にそれぞれ対応して複数の貫通孔を有する。 The electrode 40 is positioned closer to the lower surface 102 of the base 10 than the inner space 111 is. The electrode 40 is, for example, an electrode for plasma generation, and spreads in layers along the lower surface 102 of the substrate 10 . The electrode 40 has, for example, a disk shape in a plan view, and has a plurality of through holes corresponding to the positions of the plurality of ejection holes 13 respectively.
　電極４０は、例えば、ニッケル（Ｎｉ）、タングステン（Ｗ）、チタン（Ｔｉ）、モリブデン（Ｍｏ）および白金（Ｐｔ）等の金属、または、上記金属の少なくとも１つを含む合金からなる。 The electrode 40 is made of, for example, metals such as nickel (Ni), tungsten (W), titanium (Ti), molybdenum (Mo) and platinum (Pt), or alloys containing at least one of the above metals.
　電極４０を内側空間１１１よりも基体１０の下面１０２に近い位置に位置させることにより、基体１０の下面１０２にプラズマ生成用の電極を別途設ける場合と比べて、シャワープレート１の構造を簡素化することができる。 Positioning the electrode 40 closer to the lower surface 102 of the substrate 10 than the inner space 111 simplifies the structure of the shower plate 1 compared to the case where an electrode for plasma generation is provided separately on the lower surface 102 of the substrate 10. be able to.
　なお、図６および図７に示すシャワープレート１を製造する場合、まず、基体１０を構成するセラミックグリーンシートと、発熱体３０を構成する金属シートと、電極４０を構成する金属シートとを用意する。ここで、空間１１、供給口１２、噴出孔１３、隔壁２０および支柱１４を形成するために、形状が異なる複数のセラミックグリーンシートが用意される。そして、用意したシートを積層する。つづいて、セラミックグリーンシートおよび金属シートの積層体を脱脂および焼成する。焼成温度は、例えば１１００℃以上１８５０℃以下の温度である。このようにして、図６に示すシャワープレート１が得られる。 When manufacturing the shower plate 1 shown in FIGS. 6 and 7, first, a ceramic green sheet forming the base 10, a metal sheet forming the heating element 30, and a metal sheet forming the electrode 40 are prepared. . Here, a plurality of ceramic green sheets having different shapes are prepared in order to form the spaces 11, the supply ports 12, the ejection holes 13, the partition walls 20, and the struts . Then, the prepared sheets are laminated. Subsequently, the laminate of ceramic green sheets and metal sheets is degreased and fired. The firing temperature is, for example, 1100° C. or higher and 1850° C. or lower. Thus, the shower plate 1 shown in FIG. 6 is obtained.
（効果）
　上述のように、実施形態に係るシャワープレート（例えば、シャワープレート１）は、基体（例えば、基体１０）と、隔壁（例えば、隔壁２０）と、供給口（例えば、供給口１２、１２Ａ）と、複数の噴出孔（例えば、噴出孔１３）とを備える。基体は、セラミックスからなり、内部に空間（例えば、空間１１）を有する板状の基体である。隔壁は、基体の空間を内側空間（例えば、内側空間１１１）と内側空間の周囲に位置する流路（例えば、流路１１２）とに隔てる。供給口は、流路にガス（例えば、プロセスガス）を供給する。複数の噴出孔は、内側空間に連通して基体の一面（例えば、下面１０２）に開口し、ガスを噴出する。そして、隔壁は、内側空間と流路とを連通し、流路を流れるガスを内側空間に導入する複数の導入孔（例えば、導入孔２１、２１Ａ）を有する。これにより、実施形態に係るシャワープレートによれば、複数の噴出孔から噴出されるガスの均一性を向上させることができる。 (effect)
As described above, the shower plate (eg, shower plate 1) according to the embodiment includes a substrate (eg, substrate 10), a partition wall (eg, partition wall 20), and supply ports (eg, supply ports 12 and 12A). , and a plurality of ejection holes (for example, ejection holes 13). The substrate is a plate-like substrate made of ceramics and having a space (for example, space 11) inside. The partition separates the space of the substrate into an inner space (eg, inner space 111) and a channel (eg, channel 112) located around the inner space. The supply port supplies gas (eg, process gas) to the channel. A plurality of ejection holes communicate with the inner space and open to one surface (for example, the lower surface 102) of the substrate to eject gas. The partition wall has a plurality of introduction holes (for example, introduction holes 21 and 21A) for communicating the inner space and the channel and for introducing the gas flowing through the channel into the inner space. Thus, according to the shower plate according to the embodiment, it is possible to improve the uniformity of the gas ejected from the plurality of ejection holes.
　また、実施形態に係る隔壁は、円環状であり、複数の導入孔は、隔壁の周方向に間隔を空けて並んで位置してもよい。これにより、実施形態に係るシャワープレートによれば、ガスを隔壁の周方向に沿って内側空間に均等に導入することができる。 In addition, the partition according to the embodiment may be annular, and the plurality of introduction holes may be arranged side by side at intervals in the circumferential direction of the partition. Thereby, according to the shower plate according to the embodiment, the gas can be evenly introduced into the inner space along the circumferential direction of the partition wall.
　また、実施形態に係る複数の導入孔は、隔壁の径方向に対して傾いていてもよい。これにより、実施形態に係るシャワープレートによれば、複数の噴出孔から噴出されるガスの均一性をより向上させることができる。 Also, the plurality of introduction holes according to the embodiment may be inclined with respect to the radial direction of the partition wall. Thus, according to the shower plate according to the embodiment, it is possible to further improve the uniformity of the gas ejected from the plurality of ejection holes.
　また、実施形態に係る供給口は、基体の側面（例えば、側面１０３）に位置し、複数の導入孔が傾く方向と同じ方向に傾いていてもよい。これにより、実施形態に係るシャワープレートによれば、供給口から流路に供給されるプロセスガスを複数の導入孔へスムーズに流すことができる。 In addition, the supply port according to the embodiment may be located on the side surface (for example, side surface 103) of the substrate and may be inclined in the same direction as the plurality of introduction holes. As a result, according to the shower plate of the embodiment, the process gas supplied from the supply port to the channel can smoothly flow to the plurality of introduction holes.
　また、実施形態に係る複数の導入孔は、流路から内側空間へ向かうにつれて幅が小さくなるテーパ形状を有してもよい。これにより、実施形態に係るシャワープレートによれば、複数の噴出孔から噴出されるガスの均一性をより向上させることができる。 Also, the plurality of introduction holes according to the embodiment may have a tapered shape in which the width decreases from the flow path toward the inner space. Thus, according to the shower plate according to the embodiment, it is possible to further improve the uniformity of the gas ejected from the plurality of ejection holes.
　また、実施形態に係る複数の導入孔は、隔壁の流路に面する外壁面において、供給口の中心軸沿いに延びる仮想線とは交差しない位置に位置してもよい。これにより、実施形態に係るシャワープレートによれば、複数の噴出孔から噴出されるガスの均一性をより向上させることができる。 In addition, the plurality of introduction holes according to the embodiment may be located at positions that do not intersect the virtual line extending along the central axis of the supply port on the outer wall surface of the partition facing the channel. Thus, according to the shower plate according to the embodiment, it is possible to further improve the uniformity of the gas ejected from the plurality of ejection holes.
　また、実施形態に係る複数の噴出孔の各々の断面積は、複数の導入孔の各々の断面積よりも小さくてもよい。また、複数の導入孔の各々の断面積は、供給口の断面積よりも小さくてもよい。また、複数の噴出孔の断面積の総和は、複数の導入孔の断面積の総和よりも小さくてもよい。また、複数の導入孔の断面積の総和は、供給口の断面積の総和よりも小さくてもよい。また、複数の噴出孔の総数は、複数の導入孔の総数よりも多くてもよい。また、複数の導入孔の総数は、供給口の総数よりも多くてもよい。これにより、実施形態に係るシャワープレートによれば、複数の噴出孔からプロセスガスをスムーズに噴出することができる。 Also, the cross-sectional area of each of the plurality of ejection holes according to the embodiment may be smaller than the cross-sectional area of each of the plurality of introduction holes. Also, the cross-sectional area of each of the plurality of introduction holes may be smaller than the cross-sectional area of the supply port. Also, the sum of the cross-sectional areas of the plurality of ejection holes may be smaller than the sum of the cross-sectional areas of the plurality of introduction holes. Also, the sum of the cross-sectional areas of the plurality of introduction holes may be smaller than the sum of the cross-sectional areas of the supply ports. Also, the total number of the plurality of ejection holes may be greater than the total number of the plurality of introduction holes. Also, the total number of the plurality of introduction holes may be greater than the total number of supply ports. Thus, according to the shower plate according to the embodiment, the process gas can be smoothly ejected from the plurality of ejection holes.
　また、実施形態に係る供給口は、基体の外部から流路へ向かうにつれて幅が小さくなるテーパ形状を有してもよい。これにより、実施形態に係るシャワープレートによれば、流路でのガスの偏在の発生を抑制することができる。 Also, the supply port according to the embodiment may have a tapered shape in which the width decreases from the outside of the base toward the channel. As a result, according to the shower plate according to the embodiment, it is possible to suppress the uneven distribution of gas in the flow path.
　また、実施形態に係るシャワープレートは、基体の内部において、基体の厚み方向に少なくとも内側空間と重なって位置する発熱体（例えば、発熱体３０）をさらに備えてもよい。これにより、実施形態に係るシャワープレートによれば、内側空間においてプロセスガスを加熱することができる。 Further, the shower plate according to the embodiment may further include a heating element (for example, heating element 30) located inside the base so as to overlap at least the inner space in the thickness direction of the base. Thereby, according to the shower plate according to the embodiment, the process gas can be heated in the inner space.
　また、実施形態に係る基体は、内側空間を支持する複数の支柱（例えば、支柱１４）を有してもよい。これにより、実施形態に係るシャワープレートによれば、内側空間においてプロセスガスをより効率よく加熱することができる。 Also, the base according to the embodiment may have a plurality of struts (for example, struts 14) that support the inner space. Thereby, according to the shower plate according to the embodiment, the process gas can be heated more efficiently in the inner space.
　また、実施形態に係るシャワープレートは、基体の内部において、内側空間よりも基体の一面に近い位置に位置する電極（例えば、電極４０）をさらに備えてもよい。これにより、実施形態に係るシャワープレートによれば、基体の下面にプラズマ生成用の電極を別途設ける場合と比べて、シャワープレートの構造を簡素化することができる。 Further, the shower plate according to the embodiment may further include an electrode (for example, electrode 40) located inside the base at a position closer to one surface of the base than the inner space. Thus, according to the shower plate according to the embodiment, the structure of the shower plate can be simplified as compared with the case where an electrode for plasma generation is separately provided on the lower surface of the substrate.
　さらなる効果や変形例は、当業者によって容易に導き出すことができる。このため、本発明のより広範な態様は、以上のように表しかつ記述した特定の詳細および代表的な実施形態に限定されるものではない。したがって、添付の請求の範囲およびその均等物によって定義される総括的な発明の概念の精神または範囲から逸脱することなく、様々な変更が可能である。 Further effects and modifications can be easily derived by those skilled in the art. Therefore, the broader aspects of the invention are not limited to the specific details and representative embodiments so shown and described. Accordingly, various changes may be made without departing from the spirit or scope of the general inventive concept defined by the appended claims and equivalents thereof.
１　シャワープレート
１０　基体
１１　空間
１２、１２Ａ　供給口
１３　噴出孔
１４　支柱
２０　隔壁
２１、２１Ａ　導入孔
３０　発熱体
４０　電極
１０１　上面
１０２　下面
１０３　側面
１１１　内側空間
１１２　流路
Ｌ　仮想線 1 shower plate 10 substrate 11 space 12, 12A supply port 13 ejection hole 14 support 20 partition wall 21, 21A introduction hole 30 heating element 40 electrode 101 upper surface 102 lower surface 103 side surface 111 inner space 112 flow path L virtual line

Claims (16)

  1. 　セラミックスからなり、内部に空間を有する板状の基体と、
    　前記基体の空間を内側空間と前記内側空間の周囲に位置する流路とに隔てる隔壁と、
    　前記流路にガスを供給する供給口と、
    　前記内側空間に連通して前記基体の一面に開口し、ガスを噴出する複数の噴出孔と
    　を備え、
    　前記隔壁は、前記内側空間と前記流路とを連通し、前記流路を流れる前記ガスを前記内側空間に導入する複数の導入孔を有する、シャワープレート。     a plate-shaped substrate made of ceramics and having a space inside;
    a partition separating the space of the base into an inner space and a flow path positioned around the inner space;
    a supply port for supplying gas to the channel;
    a plurality of ejection holes that communicate with the inner space, open on one surface of the base, and eject gas;
    The shower plate, wherein the partition wall communicates the inner space with the channel and has a plurality of introduction holes for introducing the gas flowing through the channel into the inner space.
  2. 　前記隔壁は、円環状であり、
    　前記複数の導入孔は、前記隔壁の周方向に間隔を空けて並んで位置する、請求項１に記載のシャワープレート。     The partition is annular,
    2. The shower plate according to claim 1, wherein the plurality of introduction holes are arranged side by side at intervals in the circumferential direction of the partition wall.
  3. 　前記複数の導入孔は、前記隔壁の径方向に対して傾いている、請求項２に記載のシャワープレート。 The shower plate according to claim 2, wherein the plurality of introduction holes are inclined with respect to the radial direction of the partition wall.
  4. 　前記供給口は、前記基体の側面に位置し、前記複数の導入孔が傾く方向と同じ方向に傾いている、請求項３に記載のシャワープレート。 The shower plate according to claim 3, wherein the supply port is positioned on the side surface of the base and is inclined in the same direction as the plurality of introduction holes.
  5. 　前記複数の導入孔は、前記流路から前記内側空間へ向かうにつれて幅が小さくなるテーパ形状を有する、請求項１～４のいずれか一つに記載のシャワープレート。 The shower plate according to any one of claims 1 to 4, wherein the plurality of introduction holes have a tapered shape whose width decreases from the channel toward the inner space.
  6. 　前記複数の導入孔は、前記隔壁の前記流路に面する外壁面において、前記供給口の中心軸沿いに延びる仮想線とは交差しない位置に位置する、請求項１～５のいずれか一つに記載のシャワープレート。 6. The plurality of introduction holes according to any one of claims 1 to 5, wherein the outer wall surface of the partition wall facing the channel is positioned so as not to intersect an imaginary line extending along the central axis of the supply port. The shower plate described in .
  7. 　前記複数の噴出孔の各々の断面積は、前記複数の導入孔の各々の断面積よりも小さい、請求項１～６のいずれか一つに記載のシャワープレート。 The shower plate according to any one of claims 1 to 6, wherein the cross-sectional area of each of the plurality of ejection holes is smaller than the cross-sectional area of each of the plurality of introduction holes.
  8. 　前記複数の導入孔の各々の断面積は、前記供給口の断面積よりも小さい、請求項１～７のいずれか一つに記載のシャワープレート。 The shower plate according to any one of claims 1 to 7, wherein the cross-sectional area of each of the plurality of introduction holes is smaller than the cross-sectional area of the supply port.
  9. 　前記複数の噴出孔の断面積の総和は、前記複数の導入孔の断面積の総和よりも小さい、請求項１～８のいずれか一つに記載のシャワープレート。 The shower plate according to any one of claims 1 to 8, wherein the sum of the cross-sectional areas of the plurality of ejection holes is smaller than the sum of the cross-sectional areas of the plurality of introduction holes.
  10. 　前記複数の導入孔の断面積の総和は、前記供給口の断面積の総和よりも小さい、請求項１～９のいずれか一つに記載のシャワープレート。 The shower plate according to any one of claims 1 to 9, wherein the total cross-sectional area of the plurality of introduction holes is smaller than the total cross-sectional area of the supply port.
  11. 　前記複数の噴出孔の総数は、前記複数の導入孔の総数よりも多い、請求項１～１０のいずれか一つに記載のシャワープレート。 The shower plate according to any one of claims 1 to 10, wherein the total number of said plurality of ejection holes is greater than the total number of said plurality of introduction holes.
  12. 　前記複数の導入孔の総数は、前記供給口の総数よりも多い、請求項１～１１のいずれか一つに記載のシャワープレート。 The shower plate according to any one of claims 1 to 11, wherein the total number of said plurality of introduction holes is greater than the total number of said supply ports.
  13. 　前記供給口は、前記基体の外部から前記流路へ向かうにつれて幅が小さくなるテーパ形状を有する、請求項１～１２のいずれか一つに記載のシャワープレート。 The shower plate according to any one of claims 1 to 12, wherein said supply port has a tapered shape whose width decreases from the outside of said base toward said channel.
  14. 　前記基体の内部において、前記基体の厚み方向に少なくとも前記内側空間と重なって位置する発熱体をさらに備える、請求項１～１３のいずれか一つに記載のシャワープレート。 The shower plate according to any one of claims 1 to 13, further comprising a heating element located inside the base so as to overlap at least the inner space in the thickness direction of the base.
  15. 　前記基体は、前記内側空間を支持する複数の支柱を有する、請求項１４に記載のシャワープレート。 The shower plate according to claim 14, wherein said base has a plurality of pillars supporting said inner space.
  16. 　前記基体の内部において、前記内側空間よりも前記基体の一面に近い位置に位置する電極をさらに備える、請求項１～１５のいずれか一つに記載のシャワープレート。 The shower plate according to any one of claims 1 to 15, further comprising an electrode located inside the base at a position closer to one surface of the base than the inner space.
PCT/JP2022/036301 2021-09-29 2022-09-28 Shower plate WO2023054531A1 (en)

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