CN107393802A - A kind of spray head of plasma etching system - Google Patents
A kind of spray head of plasma etching system Download PDFInfo
- Publication number
- CN107393802A CN107393802A CN201710579649.7A CN201710579649A CN107393802A CN 107393802 A CN107393802 A CN 107393802A CN 201710579649 A CN201710579649 A CN 201710579649A CN 107393802 A CN107393802 A CN 107393802A
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- CN
- China
- Prior art keywords
- plasma etching
- admission hole
- etching system
- spray head
- air admission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a kind of spray head of plasma etching system, main body is in the form of annular discs, first annular flange is provided with the proximal edge of disk body upper surface, air inlet duct, second annular flange and air guide channel, wherein, the air inlet duct is arranged between the first annular flange and second annular flange, second annular flange and the air guide channel are interspersed and entirety is annular in shape, it is in annular concentric and equally distributed first air admission hole that disk body middle section, which is provided with inside and outside two circle, between the outer ring air admission hole of the middle section and second annular flange, it is in annular concentric and equally distributed second air admission hole to be additionally provided with multi-turn, also include gas block, selectivity is carried out to second air admission hole according to gas distribution in technique process to block.The present invention can effectively improve the uniformity of plasma etching while realize the controllability of air inlet uniform flow.
Description
Technical field
The present invention relates to microelectronics technology, and in particular to plasma etching system, relates more specifically to plasma
The spray head of body etching system.
Background technology
Etching is an important component of Micrometer-Nanometer Processing Technology, and the fast development of microelectronics promotes it constantly forward
Development.Say on the whole, lithographic technique can be divided into two kinds of dry etching and wet etching, the etching at initial stage using wet etching as
It is main, but as element manufacturing enters micron, sub-micron epoch, wet etching is difficult to meet higher and higher required precision.Dry method
Etching generally removes the film being etched, conventional dry etching by two methods for being combined of aspect of physics and chemistry
There are many kinds, its operation principle is mainly etching gas glow discharge by way of inductive, produces reactive radical species, Asia
Stable state particle, atom etc., while bias voltage is provided in reative cell, energy is provided to plasma, makes plasma vertical
Act on substrate, react the volatilizable gaseous material of generation, and be evacuated equipment and take away.Dry etching has etching speed
Degree is fast, selection than it is high, anisotropy is good, etching injury is small, large-area uniformity is good, etch profile profile controllability is high and etching
The advantages that surfacing is smooth, it is simple to operate, it is easy to automatically control, can meets to make super large-scale integration, MEMS, light
The requirement of the various micro structural components such as electronic device.
With the development of technology, the requirement of plasma etching also more and more higher, one of etching effect described in it
Major parameter is exactly uniformity, and influences the distribution that the main factor of uniformity is exactly plasma in reaction chamber, the knot of chamber
The design of structure and induction part has together decided on the distribution of plasma.In the etching system that presently, there are, inside reaction chamber
It is mostly circular, and pumping port configurations are located at sample stage periphery bottom, reacting gas enters chamber through admission line by cavity side
In the even depressed structure of top, enter afterwards in chamber.This structure is easily made because gas is from the entrance of the side of even depressed structure
Big in the spray apertures air inflow close to admission line side into gas, the spray apertures air inflow away from admission line side is small, leads
The substrate surface in technical process is caused can not uniformly to touch reacting gas, especially the substrate table away from the side region of air inlet one
Face haptoreaction gas deficiency, the substrate region etching effect is bad, finally influences etching homogeneity.
The content of the invention
In order to solve the above problems, the present invention provides a kind of spray head of plasma etching system, and main body is in the form of annular discs,
First annular flange, air inlet duct, the second annular flange and air guide channel are provided with the proximal edge of disk body upper surface, wherein, it is described enter
Air drain is arranged between the first annular flange and second annular flange, and second annular flange and the air guide are led to
Road is interspersed and entirety is annular in shape, and it is in annular concentric and equally distributed first air inlet that disk body middle section, which is provided with inside and outside two circle,
Hole, between the outer ring air admission hole of the middle section and second annular flange, be additionally provided with multi-turn in annular concentric and
Second air admission hole of even distribution, in addition to gas block, second air admission hole is divided in technique process according to gas
Cloth scope carries out selectivity and blocked.
The spray head of the plasma etching system of the present invention, it is preferably, between the air admission hole of two adjacent rings second
Spacing is 30~70mm.
The spray head of the plasma etching system of the present invention, be preferably, second annular flange in a ring straight
Footpath is more than the cross-sectional distance of the bottom electrode of plasma etching system.
The spray head of the plasma etching system of the present invention, be preferably, second annular flange in a ring straight
Footpath is bigger 10~50mm than the cross-sectional distance of the bottom electrode of plasma etching system.
The spray head of the plasma etching system of the present invention, it is preferably, the width of second flange is 3~7mm.
The spray head of the plasma etching system of the present invention, it is preferably, the diameter of the gas block and described second
The diameter of air admission hole inlet end is identical.
The spray head of the plasma etching system of the present invention, it is preferably that first, second air admission hole is counter sink,
The aperture of inlet end is 2~4mm, and the aperture of outlet side is 0.5~1.5mm.
The spray head of the plasma etching system of the present invention, it is preferably, first positioned at the outer ring of the middle section
The height of air admission hole countersunk head is more than or equal to the height of the first air admission hole countersunk head of the inner ring positioned at the middle section.
The spray head of the plasma etching system of the present invention, it is preferably that the material of the gas block can be ceramics, stone
English or polytetrafluoroethylene (PTFE).
The spray head of the plasma etching system of the present invention, it is preferably that the disk body material is aluminium oxide ceramics, stone
English, silica, silicon nitride or aluminium alloy.
A kind of spray head of plasma etching system of the present invention can be efficiently solved because reaction chamber is enterprising depressed
Structure be located at side and caused by reacting gas the problem of can not being evenly distributed to substrate surface.Carrying out the mistake of plasma etching
Cheng Zhong, reacting gas enters in vacuum reaction chamber room via the spray head of the plasma etching system of the present invention, due to air guide
A series of setting of groove, air guide channel and air admission holes, it ensure that the substrate in the middle part of reaction chamber can be with reacting gas more
Add and equably contacted, so as to improve the uniformity of plasma etching.In addition, by setting gas block, it is further real
The controllability of air inlet uniform flow is showed.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical scheme of the prior art
The required accompanying drawing used is briefly described in embodiment or description of the prior art, it should be apparent that, in describing below
Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before creative work is not paid
Put, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the dimensional structure diagram of the spray head of plasma etching system.
Fig. 2 is the top view of the spray head of plasma etching system.
Fig. 3 is the profile of the air admission hole of middle section Internal and external cycle first of the spray head of plasma etching system.
Embodiment
Technical scheme is clearly and completely described below in conjunction with accompanying drawing, it is clear that described implementation
Example is part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
In the description of the invention, it is necessary to explanation, term " on ", " under ", " center ", " edge ", " interior " " outer " etc.
The orientation or position relationship of instruction are based on orientation shown in the drawings or position relationship, are for only for ease of the description present invention and letter
Change description, rather than instruction or imply signified device or element must have specific orientation, with specific azimuth configuration and
Operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for describing purpose, and can not
It is interpreted as indicating or implying relative importance.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected by intermediary, Ke Yishi
The connection of two element internals.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
Fig. 1 is the dimensional structure diagram of the spray head of plasma etching system.Fig. 2 is plasma etching system
The top view of spray head.As shown in Fig. 1~2, the main body of the spray head of plasma etching system is in the form of annular discs, disk body upper surface
First annular flange 1, air inlet duct 2, the second annular flange 3 and air guide channel 4 are provided with close to edge, wherein, air inlet duct 2 is set
Between the first annular annular flange 3 of flange 1 and second, the second annular flange 3 and air guide channel 4 be interspersed and it is overall be in ring
Shape, it will can be guided from the reacting gas that upper surface enters to central area.Second annular flange 3 diameter in a ring be more than wait from
The cross-sectional distance of the bottom electrode of daughter etching system.It is further preferred that the second annular flange 3 diameter ratio in a ring etc.
Big 10mm~the 50mm of cross-sectional distance of the bottom electrode of plasma etching system.The width of second flange is preferably 3mm~7mm.
It is in annular concentric and equally distributed first air admission hole that disk body central area, which is provided with inside and outside two circle, i.e., institute in Fig. 1, Fig. 2
First air admission hole 5 of the centrally located inner ring shown and the first air admission hole 6 of centrally located outer ring, ensure that reacting gas can uniformly enter
Enter into the reaction chamber of plasma etching machine.It is preferably located at the first air admission hole 5 of central inner ring and centrally located outer ring
The first air admission hole 6 be counter sink.Figure 3 illustrates the profile of the central air admission hole of Internal and external cycle first.As shown in figure 3, position
It is preferably 2~3mm in the inlet end aperture a of the first air admission hole 6 of central outer ring, outlet side aperture b is preferably 0.5~1.5mm.
The inlet end aperture c of first air admission hole 5 of centrally located inner ring is preferably 2~4mm, and outlet side aperture d is preferably 0.5~
1.5mm.The height h1 of the countersunk head of the first air admission hole 6 of central outer ring is more than or equal to the height of the countersunk head of the first air admission hole 5 of central inner ring
Spend h2.
In addition, in the inner side of the outside of the first air admission hole 6 of central outer ring, the second annular flange 3 and air guide channel 4, also
Around axle center it is in annular concentric and equally distributed second air admission hole 7 provided with multi-turn.Between between the air admission hole of two adjacent rings second
Away from preferably 30~70mm.Often the number of the second air admission hole set by circle increases according to the increase of the diameter of its place annular, often
The second air admission hole on one circle is all uniformly distributed.The inlet end aperture of second air admission hole 7 is preferably 2~3mm, and outlet side aperture is excellent
Elect 0.5~1.5mm as.
The spray head of the plasma etching system of conventional art is without equally distributed second annular flange 3 of annular and leads
Gas passage 4, for gas after the entrance of circular air inlet duct 2, most of gas is anti-by entering close to the air admission hole of circular air inlet duct 2
Gas interior is answered, so as to cause the plasma density of formation at this big, only a small amount of gas diffusion is to away from circular air inlet duct 2
Air admission hole, the plasma density of the part is small, therefore during etching, and the substrate surface away from the side region of air inlet one connects
Reacting gas deficiency is touched, the substrate region etching effect is bad, finally influences etching homogeneity.The plasma etching of the present invention
The showerhead configuration of system is by introducing the second annular flange 3 and air guide channel 4, after gas enters at circular air inlet duct 2,
By the inhibition of the second annular flange 3, spread first in circular air inlet duct 2, after being uniformly distributed at air guide channel 4
Into the region with the first air admission hole and the second air admission hole, so as to ensure that the first air admission hole and the second air admission hole produce uniformly
Air inlet effect, obtain uniform plasma density distribution, it is ensured that during etching, the substrate in the middle part of reaction chamber is more
Uniform haptoreaction gas, improves etching homogeneity.
In addition, the spray head of the plasma etching system of the present invention is additionally provided with gas block, in technique process
It is middle that selective block is carried out to the second air admission hole according to gas distribution.Preferably, the diameter of gas block and the second air inlet
The diameter at gas inlet hole end is identical.The material of the gas block can be ceramics, quartz, polytetrafluoroethylene (PTFE) etc..By to different
Second air admission hole is blocked, and can form different gas distributions, such design can not only make reacting gas with
Substrate uniformly contacts, and improves etching homogeneity, and realizes the adjustable of air inlet uniform flow.In etching process, technique
Personnel can select optimal air inlet scheme according to specific process parameter, block the second air admission hole of setting, make gas only from reservation
The second air admission hole enter reaction chamber.
The disk body material of the spray head of the plasma etching system of the present invention can be aluminium oxide ceramics, quartz, oxidation
Silicon, silicon nitride, aluminium alloy etc..
A kind of spray head of plasma etching system of the present invention can be efficiently solved because reaction chamber is enterprising depressed
Structure be located at side and caused by reacting gas the problem of can not being evenly distributed to substrate surface.Carrying out the mistake of plasma etching
Cheng Zhong, reacting gas enters in vacuum reaction chamber room via the spray head of the plasma etching system of the present invention, due to air guide
A series of setting of groove, air guide channel and air admission holes, it ensure that the substrate in the middle part of reaction chamber can be with reacting gas more
Add and equably contacted, so as to improve the uniformity of plasma etching.In addition, by setting gas block, it is further real
The controllability of air inlet uniform flow is showed.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, either which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
1. a kind of spray head of plasma etching system, main body are in the form of annular discs, it is characterised in that
First annular flange, air inlet duct, the second annular flange and air guide channel are provided with the proximal edge of disk body upper surface, wherein, institute
State air inlet duct to be arranged between the first annular flange and second annular flange, second annular flange and described lead
Gas passage is interspersed and entirety is annular in shape,
It is in annular concentric and equally distributed first air admission hole that disk body middle section, which is provided with inside and outside two circle,
Between the outer ring air admission hole of the middle section and second annular flange, be additionally provided with multi-turn in annular concentric and
Second air admission hole of even distribution,
Also include gas block, selectivity is carried out to second air admission hole according to gas distribution in technique process
Block.
2. the spray head of plasma etching system according to claim 1, it is characterised in that
Spacing between the air admission hole of two adjacent rings second is 30~70mm.
3. the spray head of plasma etching system according to claim 1, it is characterised in that
Second annular flange diameter in a ring be more than plasma etching system bottom electrode cross-sectional distance.
4. the spray head of plasma etching system according to claim 3, it is characterised in that
Second annular flange diameter in a ring it is bigger than the cross-sectional distance of the bottom electrode of plasma etching system by 10
~50mm.
5. the spray head of plasma etching system according to claim 1, it is characterised in that
The width of second flange is 3~7mm.
6. the spray head of plasma etching system according to claim 1, it is characterised in that
The diameter of the gas block is identical with the diameter of the second air admission hole inlet end.
7. the spray head of plasma etching system according to claim 1, it is characterised in that
First, second air admission hole is counter sink, and the aperture of inlet end is 2~4mm, the aperture of outlet side for 0.5~
1.5mm。
8. the spray head of plasma etching system according to claim 3, it is characterised in that
Height positioned at the first air admission hole countersunk head of the outer ring of the middle section is more than or equal in the middle section
The height of first air admission hole countersunk head of circle.
9. the spray head of the plasma etching system according to right 1, it is characterised in that
The material of the gas block can be ceramics, quartz or polytetrafluoroethylene (PTFE).
10. the spray head of the plasma etching system according to right 1, it is characterised in that
The disk body material is aluminium oxide ceramics, quartz, silica, silicon nitride or aluminium alloy.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710579649.7A CN107393802A (en) | 2017-07-17 | 2017-07-17 | A kind of spray head of plasma etching system |
| PCT/CN2018/087670 WO2019015388A1 (en) | 2017-07-17 | 2018-05-21 | Spray head for plasma etching system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710579649.7A CN107393802A (en) | 2017-07-17 | 2017-07-17 | A kind of spray head of plasma etching system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107393802A true CN107393802A (en) | 2017-11-24 |
Family
ID=60339831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710579649.7A Pending CN107393802A (en) | 2017-07-17 | 2017-07-17 | A kind of spray head of plasma etching system |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107393802A (en) |
| WO (1) | WO2019015388A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019015388A1 (en) * | 2017-07-17 | 2019-01-24 | 江苏鲁汶仪器有限公司 | Spray head for plasma etching system |
| CN113013011A (en) * | 2019-12-20 | 2021-06-22 | 中微半导体设备(上海)股份有限公司 | Gas distribution device and plasma processing apparatus |
| CN113113283A (en) * | 2021-04-08 | 2021-07-13 | 中国科学院光电技术研究所 | Plasma density distribution regulation and control method based on air inlet distribution control |
| WO2023283123A1 (en) * | 2021-07-09 | 2023-01-12 | Applied Materials, Inc. | Shaped showerhead for edge plasma modulation |
| WO2023054531A1 (en) * | 2021-09-29 | 2023-04-06 | 京セラ株式会社 | Shower plate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101030538A (en) * | 2006-02-27 | 2007-09-05 | 东京毅力科创株式会社 | Plasma etching apparatus and method |
| CN105280469A (en) * | 2015-09-17 | 2016-01-27 | 武汉华星光电技术有限公司 | Etching reaction system for reducing damage of plasma at air exhaust openings |
| CN206312874U (en) * | 2016-12-29 | 2017-07-07 | 江苏鲁汶仪器有限公司 | A kind of even gas disk of plasma etching machine |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105331953B (en) * | 2014-07-23 | 2019-04-23 | 北京北方华创微电子装备有限公司 | Inlet duct and semiconductor processing equipment |
| KR101698433B1 (en) * | 2015-04-30 | 2017-01-20 | 주식회사 에이씨엔 | Plasma apparatus for vapor phase etching and cleaning |
| CN107393802A (en) * | 2017-07-17 | 2017-11-24 | 江苏鲁汶仪器有限公司 | A kind of spray head of plasma etching system |
-
2017
- 2017-07-17 CN CN201710579649.7A patent/CN107393802A/en active Pending
-
2018
- 2018-05-21 WO PCT/CN2018/087670 patent/WO2019015388A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101030538A (en) * | 2006-02-27 | 2007-09-05 | 东京毅力科创株式会社 | Plasma etching apparatus and method |
| CN105280469A (en) * | 2015-09-17 | 2016-01-27 | 武汉华星光电技术有限公司 | Etching reaction system for reducing damage of plasma at air exhaust openings |
| CN206312874U (en) * | 2016-12-29 | 2017-07-07 | 江苏鲁汶仪器有限公司 | A kind of even gas disk of plasma etching machine |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019015388A1 (en) * | 2017-07-17 | 2019-01-24 | 江苏鲁汶仪器有限公司 | Spray head for plasma etching system |
| CN113013011A (en) * | 2019-12-20 | 2021-06-22 | 中微半导体设备(上海)股份有限公司 | Gas distribution device and plasma processing apparatus |
| CN113013011B (en) * | 2019-12-20 | 2022-11-29 | 中微半导体设备(上海)股份有限公司 | Gas distribution device and plasma processing apparatus |
| CN113113283A (en) * | 2021-04-08 | 2021-07-13 | 中国科学院光电技术研究所 | Plasma density distribution regulation and control method based on air inlet distribution control |
| WO2023283123A1 (en) * | 2021-07-09 | 2023-01-12 | Applied Materials, Inc. | Shaped showerhead for edge plasma modulation |
| WO2023054531A1 (en) * | 2021-09-29 | 2023-04-06 | 京セラ株式会社 | Shower plate |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019015388A1 (en) | 2019-01-24 |
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Application publication date: 20171124 |