WO2023045386A1 - Igbt device and manufacturing method therefor - Google Patents

Igbt device and manufacturing method therefor Download PDF

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Publication number
WO2023045386A1
WO2023045386A1 PCT/CN2022/095959 CN2022095959W WO2023045386A1 WO 2023045386 A1 WO2023045386 A1 WO 2023045386A1 CN 2022095959 W CN2022095959 W CN 2022095959W WO 2023045386 A1 WO2023045386 A1 WO 2023045386A1
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region
main surface
igbt device
substrate
hydrogen ion
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PCT/CN2022/095959
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French (fr)
Chinese (zh)
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曹功勋
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上海积塔半导体有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Definitions

  • the invention belongs to the field of semiconductor integrated circuit design and manufacture, and in particular relates to an IGBT device and a manufacturing method thereof.
  • IGBT Insulated Gate Bipolar Transistor
  • BJT Bipolar Transistor
  • MOSFET Insulated Gate Field Effect Transistor
  • the driving circuit has the advantages of low power, simple driving, fast switching speed, and small switching loss, and has the advantages of large current density, strong current handling capability, and low conduction saturation voltage of BJT. Since its invention in the early 1980s, it has been widely studied at home and abroad. At present, IGBT has broad application prospects and is widely used in new energy vehicles, industrial frequency conversion, photovoltaics, smart grids and locomotives. With the continuous development of technology, there is no doubt that IGBT higher performance and reliability requirements.
  • the object of the present invention is to provide an IGBT device and a manufacturing method thereof, which are used to solve the problem in the prior art that the transition region bears too much current when the IGBT is turned off.
  • the present invention provides a method for manufacturing an IGBT device, the method includes the steps of: providing a substrate, the substrate includes opposite first and second main surfaces, and Complete the front process of the IGBT device on the first main surface to form the active region, transition region and terminal region of the IGBT device; perform oxygen ion implantation on the second main surface of the transition region and the terminal region through a pattern mask , to form an oxygen ion defect layer in the second main surface of the transition region and the terminal region; perform conductive dopant ion implantation on the second main surface of the substrate, so as to form an oxygen ion defect layer on the second main surface of the substrate forming a collector region; performing hydrogen ion implantation on the second main surface of the substrate to form a hydrogen ion doped region in the second main surface, and the oxygen ion defect layer is located on the hydrogen ion doped In the region, wherein, the oxygen ions in the oxygen ion defect layer serve as adsorbent
  • a step of thinning the second main surface of the substrate is also included.
  • the active region of the IGBT device includes a well region disposed on the first main surface of the substrate, a trench gate structure, an emitter region and a carrier storage doped region, and the trench gate
  • the structure penetrates the well region into the substrate, the emitter region is arranged in the well region, and is located on the side of the trench gate structure, and the carrier storage doping region is arranged in the Below the well region, the emitter metal layer is connected to the emitter region and the well region.
  • the transition region includes a well region disposed on the first main surface of the substrate and a connection hole connected to the well region
  • the terminal region of the IGBT device includes a first The field oxygen layer on the main surface and the stop ring located at the edge of the termination region, the transition region and the termination region also include a lateral variable doping layer across the transition region and the termination region.
  • the oxygen ion implantation dose of the oxygen ion implantation is between 1e10cm -2 ⁇ 1e15cm -2 , and the oxygen ion implantation energy is between 200KeV ⁇ 15MeV.
  • the conductive ion implantation dose of the conductive dopant ion implantation is between 1e12-1e14cm ⁇ 2
  • the conductive ion implantation energy is between 20KeV ⁇ 60KeV
  • the hydrogen ion implantation includes performing multiple hydrogen ion implantations on the second main surface of the substrate and annealing, so that the hydrogen ion doped region has multiple hydrogen ion doping concentrations of different hydrogen ions
  • the hydrogen ion doping concentration of the plurality of hydrogen ion doped layers gradually decreases from the second main surface toward the first main surface.
  • the number of times of hydrogen ion implantation is between 2 times and 4 times.
  • the hydrogen ion implantation dose of the hydrogen ion implantation is between 5e11 ⁇ 5e16cm ⁇ 2
  • the hydrogen ion implantation energy is between 200KeV ⁇ 1.5MeV
  • the annealing temperature is between 300°C ⁇ 500°C
  • the annealing time is between 0.5h and 5h.
  • the present invention also provides an IGBT device.
  • the IGBT device includes: a substrate, the substrate includes opposite first and second main surfaces, and the first main surface is formed with a front structure of the IGBT device.
  • the IGBT device includes an active region, a transition region, and a terminal region; an oxygen ion defect layer formed in the second main surface of the transition region and the terminal region; a collector region formed on the second main surface of the substrate a hydrogen ion doped region formed in the second main surface of the substrate, the oxygen ion defect layer is located in the hydrogen ion doped region, wherein the oxygen ions in the oxygen ion defect layer serve as hydrogen ions
  • the adsorbent thus increases the doping concentration of hydrogen ions in the hydrogen ion doped region.
  • the active region of the IGBT device includes a well region disposed on the first main surface of the substrate, a trench gate structure, an emitter region and a carrier storage doped region, and the trench gate
  • the structure penetrates the well region into the substrate, the emitter region is arranged in the well region, and is located on the side of the trench gate structure, and the carrier storage doping region is arranged in the below the well.
  • the transition region includes a well region disposed on the first main surface of the substrate and a connection hole connected to the well region
  • the terminal region of the IGBT device includes a first The field oxygen layer on the main surface and the stop ring located at the edge of the termination region, the transition region and the termination region also include a lateral variable doping layer across the transition region and the termination region.
  • the oxygen ion implantation dose contained in the oxygen ion defect layer is between 1e10cm -2 -1e15cm -2 , and the oxygen ion implantation energy is between 200KeV - 15MeV.
  • the implantation dose of conductive dopant ions included in the collector region is between 1e12-1e14cm ⁇ 2 , and the implantation energy of conductive dopant ions is between 20KeV ⁇ 60KeV.
  • the hydrogen ion doped region has multiple hydrogen ion doped layers with different hydrogen ion doping concentrations, and the hydrogen ion doping concentrations of the multiple hydrogen ion doped layers are different from the second main surface.
  • the direction of the first main surface gradually decreases.
  • the number of hydrogen ion doped layers contained in the hydrogen ion doped region is between 2 and 4.
  • the hydrogen ion implantation dose contained in the hydrogen ion doped region is between 5e11 ⁇ 5e16 cm ⁇ 2 , and the hydrogen ion implantation energy is between 200 KeV ⁇ 1.5 MeV.
  • the IGBT device of the present invention and its manufacturing method have the following beneficial effects:
  • the present invention arranges an oxygen ion defect layer on the back of the transition region and the termination region of the IGBT device, which reduces the hole life of the transition region and the termination region, and then reduces the P-type collector on the back of the IGBT transition region and the termination region when the IGBT device is turned on. emission efficiency.
  • one or more hydrogen ions are adsorbed on oxygen impurities and self-gap to form N-type doping.
  • increasing oxygen ions can increase the hydrogen ion adsorption carrier and increase the N-type doping concentration, which can effectively Increase the total concentration of the buffer layer, and further reduce the emission efficiency of the P-type collector on the back of the IGBT device transition region and the terminal region when the IGBT device is turned on.
  • the oxygen ion defect layer of the present invention can reduce the emission efficiency of the P-type collector on the back of the transition region and the terminal region, and can reduce the holes injected from the transition region of the IGBT device and the P-type collector on the back of the terminal region when the IGBT device is turned on.
  • the IGBT device is turned off, the recombination speed of electrons and holes in the transition region and the terminal region will be accelerated, the amount of holes drawn from the openings in the transition region will be reduced, and the problem of current concentration will be alleviated.
  • the present invention adds an oxygen ion defect layer on the back of the transition region and the termination region of the IGBT device.
  • the emission efficiency of the transition region and the termination region can be reduced, and at the same time, the transition region and the termination region can be improved when the IGBT device is turned off.
  • the recombination speed of electrons and holes can effectively alleviate the problem of current concentration in the transition region and improve the reliability of the IGBT chip.
  • FIG. 1 to 5 show the structural schematic diagrams of each step of the manufacturing method of the IGBT device according to the embodiment of the present invention, wherein FIG. 5 shows the schematic structural diagram of the IGBT device according to the embodiment of the present invention.
  • spatial relation terms such as “below”, “below”, “below”, “below”, “above”, “on” etc. may be used herein to describe an element or element shown in the drawings.
  • a layer is referred to as being “between” two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
  • structures described as having a first feature "on top of" a second feature may include embodiments where the first and second features are formed in direct contact, as well as additional features formed between the first and second features. Embodiments between the second feature such that the first and second features may not be in direct contact.
  • the IGBT device can be divided into three regions, namely the active region, the transition region and the terminal region.
  • the P-type collector on the back side begins to inject holes into the drift region of the IGBT device.
  • the holes flow out from the back side of the IGBT device, and the holes flow out from the front side of the IGBT device.
  • the holes in the active region can flow out directly from the front opening of the active region, but there is no current channel on the front side of the termination region, and the holes in the termination region mainly flow out from the opening in the transition region, which will cause current flow in the transition region Concentration problem, the transitional concentration of local current leads to local temperature rise and reduces the reliability of IGBT devices.
  • this embodiment provides a method for manufacturing an IGBT device, and the method includes the following steps:
  • step 1) provide a substrate 101, described substrate 101 comprises opposite first main surface and second main surface, finish the front process of IGBT device on described first main surface, The active region, the transition region and the terminal region of the IGBT device are formed.
  • the substrate 101 may be a single crystal silicon substrate. In some embodiments, the substrate 101 may also be made of other materials, such as but not limited to silicon germanium or germanium. In other embodiments, the substrate 101 may also be a substrate including other element semiconductors or compound semiconductors, such as gallium arsenide, indium phosphide, or silicon carbide.
  • Completing the front process of the IGBT device on the first main surface includes preparing the front structure of the active region, the transition region and the termination region of the IGBT device, specifically, the active region of the IGBT device includes The well region 108 on the first main surface of the bottom 101, the trench gate structure, the emitter region 109 and the carrier storage doped region 107, the trench gate structure penetrates the well region 108 into the substrate 101 , the trench gate structure includes a trench extending below the well region 108, a gate dielectric layer 105 located on the sidewall of the trench, and a polysilicon layer 106 filled in the trench, and the emitter region 109 is disposed in the well region 108 and on the side of the trench gate structure, and the carrier storage doped region 107 is disposed under the well region 108 .
  • the transition region includes a well region 108 disposed on the first main surface of the substrate 101 and a connection hole connected to the well region 108, and the terminal region of the IGBT device includes a first
  • the field oxygen layer 103 on the main surface and the stop ring 104 located at the edge of the termination region, the transition region and the termination region also include a lateral variable doping layer 102 across the transition region and the termination region.
  • An insulating layer 110 is also formed on the first main surface of the IGBT device.
  • a front metal 111 is formed on the insulating layer 110.
  • the front metal 111 includes an emitter metal layer and a gate metal layer.
  • the emitter metal It is connected to the emitter region 109 and the well region 108 of the active region through a connection hole, and is connected to the well region 108 of the transition region through a connection hole, and the gate metal layer is connected to the trench gate structure.
  • the polysilicon layer 106 is connected.
  • the gate metal layer is disposed above the field oxide layer 103 in the terminal region, so as to save the area of the active region and facilitate the electrical extraction of the trench gate structure.
  • the IGBT device is implemented based on an N-type substrate, the substrate 101 is N-type doped, the well region 108 is P-type doped, and the emitter region 109 is N-type doped , the carrier storage doped region 107 is N-type doped, the stop ring 104 is N-type doped, and the lateral variable doping layer 102 is P-type doped.
  • the ion doping concentration of the above-mentioned doping regions can be set according to parameters such as on-resistance and reverse withstand voltage performance of the device.
  • a step of thinning the second main surface of the substrate 101 is also included.
  • the thinning process can be, for example, a grinding process, etc., and the substrate
  • the thinned thickness of 101 can be set according to the withstand voltage and other properties of the device.
  • step 2) is performed to perform oxygen ion implantation on the second main surface of the transition region and the terminal region through a pattern mask, so as to form in the second main surface of the transition region and the terminal region Oxygen ion defect layer 113 .
  • a pattern mask is first formed on the second main surface of the substrate 101, the pattern mask reveals the transition region and the terminal region, and then the second main surface of the transition region and the terminal region is oxygenated.
  • the oxygen ion implantation dose of the oxygen ion implantation is between 1e10cm -2 ⁇ 1e15cm -2 , and the oxygen ion implantation energy is between 200KeV ⁇ 15MeV.
  • the oxygen ion implantation dose of the oxygen ion implantation is 1e13cm -2 , and the oxygen ion implantation energy is 1 MeV.
  • the oxygen ion implantation dose of the oxygen ion implantation is 1e14cm -2 , and the oxygen ion implantation energy is 3MeV.
  • the oxygen ion implantation can form an oxygen ion defect layer 113 in the substrate 101, and the oxygen ion defect layer 113 is arranged on the back of the transition region and the termination region of the IGBT device, which reduces the hole lifetime of the transition region and the termination region, and then When the IGBT device is turned on, the emission efficiency of the P-type collector on the back of the IGBT transition region and the terminal region is reduced.
  • step 3 is then performed, performing conductive dopant ion implantation on the second main surface of the substrate 101 to form a collector region 112 on the second main surface of the substrate 101 .
  • the conductive dopant ions may be boron or a boron compound
  • the conductive ion implantation dose of the conductive dopant ion implantation is between 1e12-1e14cm -2
  • the conductive ion implantation energy is between 20KeV ⁇ 60KeV
  • the above-mentioned laser annealing process or furnace tube annealing process can eliminate oxygen ion defects that are unstable at high temperature and leave oxygen ion defects that are stable at high temperature.
  • laser annealing equipment or furnace tube annealing equipment can be selected according to the frequency requirements of devices. For example, for the annealing of IGBT devices for high-frequency applications, furnace tube equipment is preferred for annealing, which can effectively increase the annealing batch and efficiency, increase production capacity, and reduce the cost of annealing equipment.
  • step 4) is performed next, and hydrogen ion implantation is performed on the second main surface of the substrate 101 to form a hydrogen ion doped region 114 in the second main surface, and the oxygen ions
  • the defect layer 113 is located in the hydrogen ion doped region 114; the hole lifetime of the transition region and the terminal region is reduced by the oxygen ion defect layer 113, and the oxygen ions of the oxygen ion defect layer 113 act as an adsorbent of hydrogen ions
  • the doping concentration of hydrogen ions in the hydrogen ion doped region 114 is increased.
  • the hydrogen ion implantation includes multiple times of hydrogen ion implantation and annealing on the second main surface of the substrate 101, so that the hydrogen ion doped region 114 has different hydrogen ion doping concentrations.
  • a plurality of hydrogen ion doped layers, the hydrogen ion doping concentration of the plurality of hydrogen ion doped layers gradually decreases from the second main surface toward the first main surface.
  • the hydrogen ion implantation dose of the hydrogen ion implantation is between 5e11-5e16cm -2
  • the hydrogen ion implantation energy is between 200KeV-1.5MeV
  • the annealing temperature is between 300°C-500°C
  • the annealing time is between 0.5h and 5h.
  • the number of hydrogen ion implantation is between 2 and 4 times, and by adjusting the dose and energy of each hydrogen ion implantation, a plurality of different A hydrogen ion-doped layer with doped peaks, for example, in this embodiment, the hydrogen ion-doped region 114 has four different doped peaks, for example including a first doped peak 141, a second doped peak 142 , a third doping peak 143 and a fourth doping peak 144 , as shown in FIG. 4 .
  • increasing oxygen ions can increase the hydrogen ion adsorbent, thereby increasing the N-type doping concentration, that is, the total concentration of the buffer layer can be effectively increased, and further reduced when the IGBT device is turned on.
  • the hole life of the transition region and the termination region can be reduced, thereby reducing the emission efficiency of the P-type collector on the back of the IGBT transition region and the termination region when the IGBT device is turned on.
  • the oxygen ions in the oxygen ion defect layer 113 serve as adsorbents for hydrogen ions, which can increase the doping concentration of hydrogen ions in the hydrogen ion doped region 114, and further reduce the IGBT device transition region and Emission efficiency of the P-type collector on the backside of the termination region.
  • the oxygen ion defect layer 113 can reduce the emission efficiency of the P-type collector on the back side of the IGBT device transition region and the terminal region, when the IGBT device is turned on, the injection from the P-type collector on the back side of the IGBT device transition region and the terminal region is reduced. At the same time, there is a low-life region (oxygen ion defect layer 113) on the back side of the transition region and the termination region of the IGBT device. The amount of holes extracted from the openings in the transition zone alleviates the problem of current concentration.
  • step 5 is finally performed to form the back metal 115 on the second main surface of the substrate 101 to complete the fabrication of the IGBT device.
  • the back metal 115 may be an Al/Ti/Ni/Ag metal stack.
  • this embodiment provides an IGBT device
  • the IGBT device includes: a substrate 101, the substrate 101 includes an opposite first main surface and a second main surface, the first main surface forms There is a front structure of the IGBT device, the IGBT device includes an active region, a transition region and a terminal region; an oxygen ion defect layer 113 is formed in the second main surface of the transition region and the termination region; the collector region 112 is formed On the second main surface of the substrate 101; the hydrogen ion doped region 114 is formed in the second main surface of the substrate 101, and the oxygen ion defect layer 113 is located in the hydrogen ion doped region 114 ; Reduce the hole lifetime of the transition region and the terminal region by the oxygen ion defect layer 113, while the oxygen ion of the oxygen ion defect layer 113 acts as an adsorbent of hydrogen ions so as to increase the hydrogen in the hydrogen ion doped region 114 ion doping concentration.
  • the substrate 101 may be a single crystal silicon substrate.
  • the substrate may also be made of other materials in some embodiments, such as but not limited to silicon germanium or germanium.
  • the substrate 101 may also be a substrate including other element semiconductors or compound semiconductors, such as gallium arsenide, indium phosphide, or silicon carbide.
  • the active region of the IGBT device includes a well region 108 disposed on the first main surface of the substrate 101, a trench gate structure, an emitter region 109 and a carrier storage doped region 107.
  • the trench gate structure penetrates the well region 108 into the substrate 101, the trench gate structure includes a trench extending below the well region 108, and a gate dielectric located on the sidewall of the trench Layer 105 and the polysilicon layer 106 filled in the trench, the emitter region 109 is set in the well region 108 and is located on the side of the trench gate structure, the carrier storage doped region 107 is disposed under the well region 108 .
  • the transition region includes a well region 108 disposed on the first main surface of the substrate 101 and a connection hole connected to the well region 108, and the terminal region of the IGBT device includes a first
  • the field oxygen layer 103 on the main surface and the stop ring 104 located at the edge of the termination region, the transition region and the termination region also include a lateral variable doping layer 102 across the transition region and the termination region.
  • An insulating layer 110 is also formed on the first main surface of the IGBT device.
  • a front metal 111 is formed on the insulating layer 110.
  • the front metal 111 includes an emitter metal layer and a gate metal layer.
  • the emitter metal It is connected to the emitter region 109 and the well region 108 of the active region through a connection hole, and is connected to the well region 108 of the transition region through a connection hole, and the gate metal layer is connected to the trench gate structure.
  • the polysilicon layer 106 is connected.
  • the gate metal layer is disposed above the field oxide layer 103 in the terminal region, so as to save the area of the active region and facilitate the electrical extraction of the trench gate structure.
  • the IGBT device is implemented based on an N-type substrate 101, the substrate 101 is N-type doped, the well region 108 is P-type doped, and the emitter region 109 is N-type doped
  • the carrier storage doped region 107 is N-type doped
  • the stop ring 104 is N-type doped
  • the lateral variable doping layer 102 is P-type doped.
  • the ion doping concentration of the above-mentioned doping regions can be set according to parameters such as on-resistance and reverse withstand voltage performance of the device.
  • the oxygen ion implantation dose contained in the oxygen ion defect layer 113 is between 1e10cm ⁇ 2 ⁇ 1e15cm ⁇ 2 , and the oxygen ion implantation energy is between 200KeV ⁇ 15MeV.
  • the oxygen ion implantation dose of the oxygen ion implantation is 1e13cm -2 , and the oxygen ion implantation energy is 1MeV.
  • the oxygen ion implantation dose of the oxygen ion implantation is 1e14cm -2 , and the oxygen ion implantation energy is 3MeV.
  • the oxygen ion implantation can form an oxygen ion defect layer 113 in the substrate 101.
  • the oxygen ion defect layer 113 is provided on the back of the transition region and the termination region of the IGBT device, which reduces the hole lifetime of the transition region and the termination region. , and then when the IGBT device is turned on, the emission efficiency of the P-type collector on the back of the IGBT transition region and the terminal region is reduced.
  • one or more hydrogen ions can be adsorbed on oxygen impurities and self-gap to form N-type doping in the follow-up. Under certain hydrogen implantation conditions, increasing oxygen ions can increase hydrogen ion adsorption carriers and increase N-type doping concentration.
  • the oxygen ion defect layer 113 can reduce the emission efficiency of the P-type collector on the back side of the IGBT device transition region and the terminal region.
  • the implantation dose of conductive dopant ions contained in the collector region 112 is between 1e12-1e14cm ⁇ 2 , and the implantation energy of conductive dopant ions is between 20KeV ⁇ 60KeV.
  • the conductive dopant ions may be boron or boron compounds, for example.
  • the hydrogen ion doped region 114 has multiple hydrogen ion doped layers with different hydrogen ion doping concentrations, and the hydrogen ion doping concentrations of the multiple hydrogen ion doped layers are from the second The main faces gradually decrease in the direction of the first main face.
  • the hydrogen ion implantation dose contained in the hydrogen ion doped region 114 is between 5e11 ⁇ 5e16 cm ⁇ 2 , and the hydrogen ion implantation energy is between 200 KeV ⁇ 1.5 MeV.
  • the hydrogen ion doped region 114 has 2 to 4 hydrogen ion doped layers with different hydrogen ion doping concentrations.
  • the hydrogen ion doped region 114 has four different doping peaks, For example, it includes a first doping peak 141 , a second doping peak 142 , a third doping peak 143 and a fourth doping peak 144 .
  • a back metal 115 is also formed on the second main surface of the substrate 101 .
  • the back metal 115 may be an Al/Ti/Ni/Ag metal stack.
  • the IGBT device of the present invention and its manufacturing method have the following beneficial effects:
  • an oxygen ion defect layer 113 is arranged on the back of the transition region and the termination region of the IGBT device, which reduces the hole lifetime of the transition region and the termination region, and then reduces the P-type concentration on the back of the IGBT transition region and the termination region when the IGBT device is turned on. Electrode emission efficiency.
  • one or more hydrogen ions are adsorbed on oxygen impurities and self-gap to form N-type doping.
  • increasing oxygen ions can increase the hydrogen ion adsorption carrier and increase the N-type doping concentration, which can effectively Increase the total concentration of the buffer layer, and further reduce the emission efficiency of the P-type collector on the back of the IGBT device transition region and the terminal region when the IGBT device is turned on.
  • the oxygen ion defect layer 113 of the present invention can reduce the emission efficiency of the P-type collector on the back side of the transition region and the terminal region, and can reduce the injection efficiency from the P-type collector on the back side of the IGBT device transition region and the terminal region when the IGBT device is turned on.
  • the amount of holes, when the IGBT device is turned off, will accelerate the recombination speed of electrons and holes in the transition region and the terminal region, reduce the amount of holes extracted from the openings in the transition region, and alleviate the problem of current concentration.
  • an oxygen ion defect layer 113 is added on the back of the IGBT device transition region and terminal region.
  • the IGBT device is turned on, the emission efficiency of the transition region and the terminal region can be reduced.
  • the IGBT device is turned off, the transition region and the terminal region can be improved.
  • the recombination speed of electrons and holes in the region can be effectively alleviated, and the current concentration problem in the transition region can be effectively alleviated, and the reliability of the IGBT chip can be improved.
  • the present invention effectively overcomes various shortcomings in the prior art and has high industrial application value.

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Abstract

Provided in the present disclosure are an IGBT device and a manufacturing method therefor. The IGBT device comprises: a substrate, the substrate comprising a first main surface and a second main surface opposite to each other, the first main surface being formed having a front structure of an IGBT device, and the IGBT device comprising an active region, a transition region, and a terminal region; an oxygen ion deficient layer formed in the second main surface of the transition region and the terminal region; a collector region formed on the second main surface of the substrate; and a hydrogen ion-doped region formed in the second main surface of the substrate. The oxygen ion deficient layer is located in the hydrogen ion-doped region. Oxygen ions of the oxygen ion deficient layer act as an adsorbent for hydrogen ions to increase a doping concentration of hydrogen ions in the hydrogen ion-doped region. In the present invention, when the IGBT device is connected, emission efficiency in transition and terminal regions is reduced, and when the IGBT device is disconnected, recombination velocities of electrons and holes in the transition and terminal regions are increased, thereby effectively alleviating the problem of current concentration arising in a transition region, and increasing the reliability of an IGBT chip.

Description

IGBT器件及其制作方法IGBT device and manufacturing method thereof 技术领域technical field
本发明属于半导体集成电路设计及制造领域，特别是涉及一种IGBT器件及其制作方法。The invention belongs to the field of semiconductor integrated circuit design and manufacture, and in particular relates to an IGBT device and a manufacturing method thereof.
背景技术Background technique
IGBT(绝缘栅双极型晶体管)，是由BJT(双极型三极管)和MOSFET(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件，因此它既具有MOSFET输入阻抗高、驱动电路功率小、驱动简单、开关速度快、开关损耗小的优点，又具有BJT电流密度大、电流处理能力强、导通饱和压降低的优点。自从80年代初发明以来，受到国内外广泛研究，目前IGBT应用前景广阔，广泛应用于新能源汽车、工业变频、光伏、智能电网和机车等多个领域，随着技术的不断发展，无疑对IGBT的性能及可靠性提出更高的要求。IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOSFET (Insulated Gate Field Effect Transistor), so it has both MOSFET input impedance and high , The driving circuit has the advantages of low power, simple driving, fast switching speed, and small switching loss, and has the advantages of large current density, strong current handling capability, and low conduction saturation voltage of BJT. Since its invention in the early 1980s, it has been widely studied at home and abroad. At present, IGBT has broad application prospects and is widely used in new energy vehicles, industrial frequency conversion, photovoltaics, smart grids and locomotives. With the continuous development of technology, there is no doubt that IGBT higher performance and reliability requirements.
发明内容Contents of the invention
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种IGBT器件及其制作方法，用于解决现有技术中IGBT关断时过渡区所承受的电流过大的问题。In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an IGBT device and a manufacturing method thereof, which are used to solve the problem in the prior art that the transition region bears too much current when the IGBT is turned off.
为实现上述目的及其他相关目的，本发明提供一种IGBT器件的制作方法，所述制作方法包括步骤：提供一衬底，所述衬底包括相对的第一主面及第二主面，于所述第一主面完成IGBT器件的正面工艺，形成所述IGBT器件的有源区、过渡区及终端区；通过图形掩膜对所述过渡区及终端区的第二主面进行氧离子注入，以在所述过渡区及终端区的第二主面内形成氧离子缺陷层；对所述衬底的第二主面进行导电掺杂离子注入，以在所述衬底的第二主面形成集电极区；对所述衬底的第二主面进行氢离子注入，以在所述的第二主面内形成氢离子掺杂区，所述氧离子缺陷层位于所述氢离子掺杂区内，其中，所述氧离子缺陷层的氧离子作为氢离子的吸附体从而增加所述氢离子掺杂区内的氢离子的掺杂浓度。In order to achieve the above object and other related objects, the present invention provides a method for manufacturing an IGBT device, the method includes the steps of: providing a substrate, the substrate includes opposite first and second main surfaces, and Complete the front process of the IGBT device on the first main surface to form the active region, transition region and terminal region of the IGBT device; perform oxygen ion implantation on the second main surface of the transition region and the terminal region through a pattern mask , to form an oxygen ion defect layer in the second main surface of the transition region and the terminal region; perform conductive dopant ion implantation on the second main surface of the substrate, so as to form an oxygen ion defect layer on the second main surface of the substrate forming a collector region; performing hydrogen ion implantation on the second main surface of the substrate to form a hydrogen ion doped region in the second main surface, and the oxygen ion defect layer is located on the hydrogen ion doped In the region, wherein, the oxygen ions in the oxygen ion defect layer serve as adsorbents for hydrogen ions to increase the doping concentration of hydrogen ions in the hydrogen ion doped region.
可选地，在完成IGBT器件的正面工艺之后还包括对所述衬底的第二主面进行减薄的 步骤。Optionally, after the front side process of the IGBT device is completed, a step of thinning the second main surface of the substrate is also included.
可选地，所述IGBT器件的有源区包括设置于所述衬底的第一主面的阱区、沟槽栅结构、发射极区及载流子存储掺杂区，所述沟槽栅结构贯穿所述阱区至所述衬底中，所述发射极区设置于所述阱区内，且位于所述沟槽栅结构的侧面，所述载流子存储掺杂区设置于所述阱区下方，所述发射极金属层与所述发射极区和所述阱区连接。Optionally, the active region of the IGBT device includes a well region disposed on the first main surface of the substrate, a trench gate structure, an emitter region and a carrier storage doped region, and the trench gate The structure penetrates the well region into the substrate, the emitter region is arranged in the well region, and is located on the side of the trench gate structure, and the carrier storage doping region is arranged in the Below the well region, the emitter metal layer is connected to the emitter region and the well region.
可选地，所述过渡区包括设置于所述衬底的第一主面的阱区以及与所述阱区连接的连接孔，所述IGBT器件的终端区包括位于所述衬底的第一主面上的场氧层及位于所述终端区边缘的截止环，所述过渡区与所述终端区还包括横跨所述过渡区与所述终端区的横向变掺杂层。Optionally, the transition region includes a well region disposed on the first main surface of the substrate and a connection hole connected to the well region, and the terminal region of the IGBT device includes a first The field oxygen layer on the main surface and the stop ring located at the edge of the termination region, the transition region and the termination region also include a lateral variable doping layer across the transition region and the termination region.
可选地，所述氧离子注入的氧离子注入剂量介于1e10cm -2～1e15cm -2之间，氧离子注入能量介于200KeV～15MeV之间。 Optionally, the oxygen ion implantation dose of the oxygen ion implantation is between 1e10cm -2 ~ 1e15cm -2 , and the oxygen ion implantation energy is between 200KeV ~ 15MeV.
可选地，所述导电掺杂离子注入的导电离子注入剂量为1e12-1e14cm -2之间，导电离子注入能量介于20KeV～60KeV之间，然后还包括采用激光退火工艺激活所述导电掺杂离子，激光的能量介于1J～2J之间，或采用炉管退火工艺激活所述导电掺杂离子，退火温度介于400～500℃之间。 Optionally, the conductive ion implantation dose of the conductive dopant ion implantation is between 1e12-1e14cm −2 , the conductive ion implantation energy is between 20KeV～60KeV, and then it also includes using a laser annealing process to activate the conductive dopant ions, the energy of the laser is between 1J-2J, or the conductive dopant ions are activated by furnace annealing process, and the annealing temperature is between 400-500°C.
可选地，所述氢离子注入包括对所述衬底的第二主面进行多次氢离子注入并退火，以使所述氢离子掺杂区具有不同氢离子掺杂浓度的多个氢离子掺杂层，多个所述氢离子掺杂层的氢离子掺杂浓度自所述第二主面向所述第一主面的方向逐渐减小。Optionally, the hydrogen ion implantation includes performing multiple hydrogen ion implantations on the second main surface of the substrate and annealing, so that the hydrogen ion doped region has multiple hydrogen ion doping concentrations of different hydrogen ions For the doped layer, the hydrogen ion doping concentration of the plurality of hydrogen ion doped layers gradually decreases from the second main surface toward the first main surface.
可选地，所述氢离子注入的次数介于2次～4次之间。Optionally, the number of times of hydrogen ion implantation is between 2 times and 4 times.
可选地，所述氢离子注入的氢离子注入剂量介于5e11～5e16cm -2之间，氢离子注入能量介于200KeV～1.5MeV之间，所述退火的温度介于300℃～500℃之间，退火时间介于0.5h～5h之间。 Optionally, the hydrogen ion implantation dose of the hydrogen ion implantation is between 5e11～5e16cm −2 , the hydrogen ion implantation energy is between 200KeV～1.5MeV, and the annealing temperature is between 300°C～500°C The annealing time is between 0.5h and 5h.
本发明还提供一种IGBT器件，所述IGBT器件包括：衬底，所述衬底包括相对的第 一主面及第二主面，所述第一主面形成有IGBT器件的正面结构，所述IGBT器件包括有源区、过渡区及终端区；氧离子缺陷层，形成于所述过渡区及终端区的第二主面内；集电极区，形成于所述衬底的第二主面；氢离子掺杂区，形成于所述衬底的第二主面内，所述氧离子缺陷层位于所述氢离子掺杂区内，其中，所述氧离子缺陷层的氧离子作为氢离子的吸附体从而增加所述氢离子掺杂区内的氢离子的掺杂浓度。The present invention also provides an IGBT device. The IGBT device includes: a substrate, the substrate includes opposite first and second main surfaces, and the first main surface is formed with a front structure of the IGBT device. The IGBT device includes an active region, a transition region, and a terminal region; an oxygen ion defect layer formed in the second main surface of the transition region and the terminal region; a collector region formed on the second main surface of the substrate a hydrogen ion doped region formed in the second main surface of the substrate, the oxygen ion defect layer is located in the hydrogen ion doped region, wherein the oxygen ions in the oxygen ion defect layer serve as hydrogen ions The adsorbent thus increases the doping concentration of hydrogen ions in the hydrogen ion doped region.
可选地，所述IGBT器件的有源区包括设置于所述衬底的第一主面的阱区、沟槽栅结构、发射极区及载流子存储掺杂区，所述沟槽栅结构贯穿所述阱区至所述衬底中，所述发射极区设置于所述阱区内，且位于所述沟槽栅结构的侧面，所述载流子存储掺杂区设置于所述阱区下方。Optionally, the active region of the IGBT device includes a well region disposed on the first main surface of the substrate, a trench gate structure, an emitter region and a carrier storage doped region, and the trench gate The structure penetrates the well region into the substrate, the emitter region is arranged in the well region, and is located on the side of the trench gate structure, and the carrier storage doping region is arranged in the below the well.
可选地，所述过渡区包括设置于所述衬底的第一主面的阱区以及与所述阱区连接的连接孔，所述IGBT器件的终端区包括位于所述衬底的第一主面上的场氧层及位于所述终端区边缘的截止环，所述过渡区与所述终端区还包括横跨所述过渡区与所述终端区的横向变掺杂层。Optionally, the transition region includes a well region disposed on the first main surface of the substrate and a connection hole connected to the well region, and the terminal region of the IGBT device includes a first The field oxygen layer on the main surface and the stop ring located at the edge of the termination region, the transition region and the termination region also include a lateral variable doping layer across the transition region and the termination region.
可选地，所述氧离子缺陷层包含的氧离子注入剂量介于1e10cm -2～1e15cm -2之间，氧离子注入能量介于200KeV～15MeV之间。 Optionally, the oxygen ion implantation dose contained in the oxygen ion defect layer is between 1e10cm -2 -1e15cm -2 , and the oxygen ion implantation energy is between 200KeV - 15MeV.
可选地，所述集电极区包含的导电掺杂离子注入剂量为1e12-1e14cm -2之间，导电掺杂离子注入能量介于20KeV～60KeV之间。 Optionally, the implantation dose of conductive dopant ions included in the collector region is between 1e12-1e14cm −2 , and the implantation energy of conductive dopant ions is between 20KeV˜60KeV.
可选地，所述氢离子掺杂区具有不同氢离子掺杂浓度的多个氢离子掺杂层，多个所述氢离子掺杂层的氢离子掺杂浓度自所述第二主面向所述第一主面的方向逐渐减小。Optionally, the hydrogen ion doped region has multiple hydrogen ion doped layers with different hydrogen ion doping concentrations, and the hydrogen ion doping concentrations of the multiple hydrogen ion doped layers are different from the second main surface. The direction of the first main surface gradually decreases.
可选地，所述氢离子掺杂区包含的氢离子掺杂层的个数为2个～4个之间。Optionally, the number of hydrogen ion doped layers contained in the hydrogen ion doped region is between 2 and 4.
可选地，所述氢离子掺杂区包含的氢离子注入剂量介于5e11～5e16cm -2之间，氢离子注入能量介于200KeV～1.5MeV之间。 Optionally, the hydrogen ion implantation dose contained in the hydrogen ion doped region is between 5e11˜5e16 cm −2 , and the hydrogen ion implantation energy is between 200 KeV˜1.5 MeV.
如上所述，本发明的IGBT器件及其制作方法，具有以下有益效果：As mentioned above, the IGBT device of the present invention and its manufacturing method have the following beneficial effects:
本发明在IGBT器件过渡区和终端区背面设置氧离子缺陷层，降低了过渡区和终端区的空穴寿命，进而在IGBT器件导通时，降低了IGBT过渡区和终端区背面P型集电极的发射效率。The present invention arranges an oxygen ion defect layer on the back of the transition region and the termination region of the IGBT device, which reduces the hole life of the transition region and the termination region, and then reduces the P-type collector on the back of the IGBT transition region and the termination region when the IGBT device is turned on. emission efficiency.
本发明通过一个或者多个氢离子吸附在氧杂质和自间隙上形成N型掺杂，在一定氢注入条件下，增加氧离子可以增加氢离子吸附载体，增加N型掺杂浓度，即可以有效增加缓冲层总浓度，进而在IGBT器件导通时，进一步降低IGBT器件过渡区和终端区背面P型集电极的发射效率。In the present invention, one or more hydrogen ions are adsorbed on oxygen impurities and self-gap to form N-type doping. Under certain hydrogen implantation conditions, increasing oxygen ions can increase the hydrogen ion adsorption carrier and increase the N-type doping concentration, which can effectively Increase the total concentration of the buffer layer, and further reduce the emission efficiency of the P-type collector on the back of the IGBT device transition region and the terminal region when the IGBT device is turned on.
本发明的氧离子缺陷层可以降低过渡区和终端区背面P型集电极的发射效率，在IGBT器件导通时，可以降低从IGBT器件过渡区和终端区背面P型集电极的注入的空穴量，在IGBT器件关断时会加快过渡区和终端区电子和空穴复合速度，减少了从过渡区开孔处抽出的空穴量，缓解电流集中问题。The oxygen ion defect layer of the present invention can reduce the emission efficiency of the P-type collector on the back of the transition region and the terminal region, and can reduce the holes injected from the transition region of the IGBT device and the P-type collector on the back of the terminal region when the IGBT device is turned on. When the IGBT device is turned off, the recombination speed of electrons and holes in the transition region and the terminal region will be accelerated, the amount of holes drawn from the openings in the transition region will be reduced, and the problem of current concentration will be alleviated.
本发明在IGBT器件过渡区和终端区背面增加氧离子缺陷层，在IGBT器件导通时，可以降低过渡区和终端区的发射效率，同时在IGBT器件关断时，可以提高过渡区和终端区电子和空穴复合速度，从而有效缓解过渡区存在的电流集中问题，提高IGBT芯片的可靠性。The present invention adds an oxygen ion defect layer on the back of the transition region and the termination region of the IGBT device. When the IGBT device is turned on, the emission efficiency of the transition region and the termination region can be reduced, and at the same time, the transition region and the termination region can be improved when the IGBT device is turned off. The recombination speed of electrons and holes can effectively alleviate the problem of current concentration in the transition region and improve the reliability of the IGBT chip.
附图说明Description of drawings
图1～图5显示为本发明实施例的IGBT器件的制作方法各步骤所呈现的结构示意图，其中，图5显示为本发明实施例的IGBT器件的结构示意图。1 to 5 show the structural schematic diagrams of each step of the manufacturing method of the IGBT device according to the embodiment of the present invention, wherein FIG. 5 shows the schematic structural diagram of the IGBT device according to the embodiment of the present invention.
元件标号说明：101衬底，102横向变掺杂层，103场氧层，104截止环，105栅介质层，106多晶硅层，107载流子存储掺杂区，108阱区，109发射极区，110绝缘层，111正面金属，112集电极区，113氧离子缺陷层，114氢离子掺杂区，115背面金属，141第一掺杂峰、142第二掺杂峰、143第三掺杂峰、144第四掺杂峰。Description of component numbers: 101 substrate, 102 lateral variable doping layer, 103 field oxygen layer, 104 stop ring, 105 gate dielectric layer, 106 polysilicon layer, 107 carrier storage doped region, 108 well region, 109 emitter region , 110 insulating layer, 111 front metal, 112 collector region, 113 oxygen ion defect layer, 114 hydrogen ion doped region, 115 back metal, 141 first doping peak, 142 second doping peak, 143 third doping peak, 144 fourth doping peak.
具体实施方式Detailed ways
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式 加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
如在详述本发明实施例时，为便于说明，表示器件结构的剖面图会不依一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本发明保护的范围。此外，在实际制作中应包含长度、宽度及深度的三维空间尺寸。For example, when describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not limit the protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth should be included in actual production.
为了方便描述，此处可能使用诸如“之下”、“下方”、“低于”、“下面”、“上方”、“上”等的空间关系词语来描述附图中所示的一个元件或特征与其他元件或特征的关系。将理解到，这些空间关系词语意图包含使用中或操作中的器件的、除了附图中描绘的方向之外的其他方向。此外，当一层被称为在两层“之间”时，它可以是所述两层之间仅有的层，或者也可以存在一个或多个介于其间的层。For the convenience of description, spatial relation terms such as "below", "below", "below", "below", "above", "on" etc. may be used herein to describe an element or element shown in the drawings. The relationship of a feature to other components or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
在本申请的上下文中，所描述的第一特征在第二特征“之上”的结构可以包括第一和第二特征形成为直接接触的实施例，也可以包括另外的特征形成在第一和第二特征之间的实施例，这样第一和第二特征可能不是直接接触。In the context of this application, structures described as having a first feature "on top of" a second feature may include embodiments where the first and second features are formed in direct contact, as well as additional features formed between the first and second features. Embodiments between the second feature such that the first and second features may not be in direct contact.
需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, so that only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the component layout type may also be more complicated.
实施例1Example 1
IGBT器件可以分为三个区域，分别是有源区、过渡区和终端区。IGBT器件导通时，背面P型集电极开始往IGBT器件的漂移区注入空穴，在IGBT器件关断期间，需要将导通期间注入在漂移区的电子和空穴全部抽出，电子从IGBT器件的背面流出，空穴从IGBT器件的正面流出。有源区的空穴可以直接从有源区正面开孔处流出，但终端区的正面并没有电流通道，终端区的空穴主要从过渡区的开孔处流出，这会导致过渡区存在电流集中问题，局部电流的 过渡集中，导致局部温度上升，降低了IGBT器件的可靠性。The IGBT device can be divided into three regions, namely the active region, the transition region and the terminal region. When the IGBT device is turned on, the P-type collector on the back side begins to inject holes into the drift region of the IGBT device. The holes flow out from the back side of the IGBT device, and the holes flow out from the front side of the IGBT device. The holes in the active region can flow out directly from the front opening of the active region, but there is no current channel on the front side of the termination region, and the holes in the termination region mainly flow out from the opening in the transition region, which will cause current flow in the transition region Concentration problem, the transitional concentration of local current leads to local temperature rise and reduces the reliability of IGBT devices.
为了解决上述问题，如图1～图5所示，本实施例提供一种IGBT器件的制作方法，所述制作方法包括以下步骤：In order to solve the above problems, as shown in Figures 1 to 5, this embodiment provides a method for manufacturing an IGBT device, and the method includes the following steps:
如图1所示，首先进行步骤1)，提供一衬底101，所述衬底101包括相对的第一主面及第二主面，于所述第一主面完成IGBT器件的正面工艺，形成所述IGBT器件的有源区、过渡区及终端区。As shown in Fig. 1, at first carry out step 1), provide a substrate 101, described substrate 101 comprises opposite first main surface and second main surface, finish the front process of IGBT device on described first main surface, The active region, the transition region and the terminal region of the IGBT device are formed.
所述衬底101可以是单晶硅衬底。在一些实施例中所述衬底101也可由其它材料制成，例如但不限于硅锗或锗。在其它实施例中，所述衬底101还可以为包括其他元素半导体或化合物半导体的衬底，例如砷化镓、磷化铟或碳化硅等。The substrate 101 may be a single crystal silicon substrate. In some embodiments, the substrate 101 may also be made of other materials, such as but not limited to silicon germanium or germanium. In other embodiments, the substrate 101 may also be a substrate including other element semiconductors or compound semiconductors, such as gallium arsenide, indium phosphide, or silicon carbide.
于所述第一主面完成IGBT器件的正面工艺包括制备所述IGBT器件的有源区、过渡区及终端区的正面结构，具体地，所述IGBT器件的有源区包括设置于所述衬底101的第一主面的阱区108、沟槽栅结构、发射极区109及载流子存储掺杂区107，所述沟槽栅结构贯穿所述阱区108至所述衬底101中，所述沟槽栅结构包括延伸至所述阱区108下方的沟槽、位于所述沟槽侧壁的栅介质层105及填充于所述沟槽中的多晶硅层106，所述发射极区109设置于所述阱区108内，且位于所述沟槽栅结构的侧面，所述载流子存储掺杂区107设置于所述阱区108下方。所述过渡区包括设置于所述衬底101的第一主面的阱区108以及与所述阱区108连接的连接孔，所述IGBT器件的终端区包括位于所述衬底101的第一主面上的场氧层103及位于所述终端区边缘的截止环104，所述过渡区与所述终端区还包括横跨所述过渡区与所述终端区的横向变掺杂层102。所述IGBT器件的第一主面上还形成有绝缘层110，所述绝缘层110上形成有正面金属111，所述正面金属111包括发射极金属层及栅极金属层，所述发射极金属通过连接孔与所述有源区的发射极区109及阱区108连接，同时通过连接孔与所述过渡区的阱区108连接，所述栅极金属层与所述沟槽栅结构中的多晶硅层106连接，在本实施例中，所述栅极金属层设置于所述终端区的场氧层103上方，以节省有源区的面积， 同时便于沟槽栅结构的电引出。Completing the front process of the IGBT device on the first main surface includes preparing the front structure of the active region, the transition region and the termination region of the IGBT device, specifically, the active region of the IGBT device includes The well region 108 on the first main surface of the bottom 101, the trench gate structure, the emitter region 109 and the carrier storage doped region 107, the trench gate structure penetrates the well region 108 into the substrate 101 , the trench gate structure includes a trench extending below the well region 108, a gate dielectric layer 105 located on the sidewall of the trench, and a polysilicon layer 106 filled in the trench, and the emitter region 109 is disposed in the well region 108 and on the side of the trench gate structure, and the carrier storage doped region 107 is disposed under the well region 108 . The transition region includes a well region 108 disposed on the first main surface of the substrate 101 and a connection hole connected to the well region 108, and the terminal region of the IGBT device includes a first The field oxygen layer 103 on the main surface and the stop ring 104 located at the edge of the termination region, the transition region and the termination region also include a lateral variable doping layer 102 across the transition region and the termination region. An insulating layer 110 is also formed on the first main surface of the IGBT device. A front metal 111 is formed on the insulating layer 110. The front metal 111 includes an emitter metal layer and a gate metal layer. The emitter metal It is connected to the emitter region 109 and the well region 108 of the active region through a connection hole, and is connected to the well region 108 of the transition region through a connection hole, and the gate metal layer is connected to the trench gate structure. The polysilicon layer 106 is connected. In this embodiment, the gate metal layer is disposed above the field oxide layer 103 in the terminal region, so as to save the area of the active region and facilitate the electrical extraction of the trench gate structure.
在本实施例中，所述IGBT器件基于N型衬底实现，所述衬底101为N型掺杂，所述阱区108为P型掺杂，所述发射极区109为N型掺杂，所述载流子存储掺杂区107为N型掺杂，所述截止环104为N型掺杂，所述横向变掺杂层102为P型掺杂。上述各掺杂区的离子掺杂浓度可依据器件的导通电阻、反向耐压性能等参数设定。In this embodiment, the IGBT device is implemented based on an N-type substrate, the substrate 101 is N-type doped, the well region 108 is P-type doped, and the emitter region 109 is N-type doped , the carrier storage doped region 107 is N-type doped, the stop ring 104 is N-type doped, and the lateral variable doping layer 102 is P-type doped. The ion doping concentration of the above-mentioned doping regions can be set according to parameters such as on-resistance and reverse withstand voltage performance of the device.
在一实施例中，在完成IGBT器件的正面工艺之后还包括对所述衬底101的第二主面进行减薄的步骤，所述减薄的工艺例如可以为研削工艺等，所述衬底101的减薄厚度可以依据器件的耐压等性能进行设定。In one embodiment, after the front-side process of the IGBT device is completed, a step of thinning the second main surface of the substrate 101 is also included. The thinning process can be, for example, a grinding process, etc., and the substrate The thinned thickness of 101 can be set according to the withstand voltage and other properties of the device.
如图2所示，然后进行步骤2)，通过图形掩膜对所述过渡区及终端区的第二主面进行氧离子注入，以在所述过渡区及终端区的第二主面内形成氧离子缺陷层113。As shown in Figure 2, then step 2) is performed to perform oxygen ion implantation on the second main surface of the transition region and the terminal region through a pattern mask, so as to form in the second main surface of the transition region and the terminal region Oxygen ion defect layer 113 .
作为示例，首先在所述衬底101的第二主面形成图形掩膜，所述图形掩膜显露所述过渡区及终端区，然后对所述过渡区及终端区的第二主面进行氧离子注入，所述氧离子注入的氧离子注入剂量介于1e10cm -2～1e15cm -2之间，氧离子注入能量介于200KeV～15MeV之间。在一具体的实施例中，所述氧离子注入的氧离子注入剂量为1e13cm -2，氧离子注入能量为1MeV。在又一具体的实施例中，所述氧离子注入的氧离子注入剂量为1e14cm -2，氧离子注入能量为3MeV。所述氧离子注入可以在所述衬底101中形成氧离子缺陷层113，，在IGBT器件过渡区和终端区背面设置氧离子缺陷层113，降低了过渡区和终端区的空穴寿命，进而在IGBT器件导通时，降低了IGBT过渡区和终端区背面P型集电极的发射效率。如图3所示，然后进行步骤3)，对所述衬底101的第二主面进行导电掺杂离子注入，以在所述衬底101的第二主面形成集电极区112。 As an example, a pattern mask is first formed on the second main surface of the substrate 101, the pattern mask reveals the transition region and the terminal region, and then the second main surface of the transition region and the terminal region is oxygenated. Ion implantation, the oxygen ion implantation dose of the oxygen ion implantation is between 1e10cm -2 ~ 1e15cm -2 , and the oxygen ion implantation energy is between 200KeV ~ 15MeV. In a specific embodiment, the oxygen ion implantation dose of the oxygen ion implantation is 1e13cm -2 , and the oxygen ion implantation energy is 1 MeV. In yet another specific embodiment, the oxygen ion implantation dose of the oxygen ion implantation is 1e14cm -2 , and the oxygen ion implantation energy is 3MeV. The oxygen ion implantation can form an oxygen ion defect layer 113 in the substrate 101, and the oxygen ion defect layer 113 is arranged on the back of the transition region and the termination region of the IGBT device, which reduces the hole lifetime of the transition region and the termination region, and then When the IGBT device is turned on, the emission efficiency of the P-type collector on the back of the IGBT transition region and the terminal region is reduced. As shown in FIG. 3 , step 3) is then performed, performing conductive dopant ion implantation on the second main surface of the substrate 101 to form a collector region 112 on the second main surface of the substrate 101 .
作为示例，所述导电掺杂离子例如可以为硼或硼的化合物，所述导电掺杂离子注入的导电离子注入剂量为1e12-1e14cm -2之间，导电离子注入能量介于20KeV～60KeV之间，然后还包括采用激光退火工艺激活所述导电掺杂离子，激光的能量介于1J～2J之间，或采用炉管 退火工艺激活所述导电掺杂离子，退火温度介于400～500℃之间。同时，上述的激光退火工艺或炉管退火工艺可以消除在高温下不稳定的氧离子缺陷，留下在高温下稳定的氧离子缺陷。本发明可以按照器件使用频率需求，选择激光退火设备或者炉管退火设备。例如，对于高频应用的IGBT器件的退火，优先选用炉管设备进行退火，可以有效提高退火批量和效率，提高产能，同时降低退火设备的成本。 As an example, the conductive dopant ions may be boron or a boron compound, the conductive ion implantation dose of the conductive dopant ion implantation is between 1e12-1e14cm -2 , and the conductive ion implantation energy is between 20KeV～60KeV , and then further includes activating the conductive dopant ions by using a laser annealing process, the energy of the laser is between 1J and 2J, or activating the conductive dopant ions by using a furnace tube annealing process, and the annealing temperature is between 400-500°C between. At the same time, the above-mentioned laser annealing process or furnace tube annealing process can eliminate oxygen ion defects that are unstable at high temperature and leave oxygen ion defects that are stable at high temperature. In the present invention, laser annealing equipment or furnace tube annealing equipment can be selected according to the frequency requirements of devices. For example, for the annealing of IGBT devices for high-frequency applications, furnace tube equipment is preferred for annealing, which can effectively increase the annealing batch and efficiency, increase production capacity, and reduce the cost of annealing equipment.
如图4所示，接着进行步骤4)，对所述衬底101的第二主面进行氢离子注入，以在所述的第二主面内形成氢离子掺杂区114，所述氧离子缺陷层113位于所述氢离子掺杂区114内；通过所述氧离子缺陷层113降低过渡区和终端区的空穴寿命，同时所述氧离子缺陷层113的氧离子作为氢离子的吸附体从而增加所述氢离子掺杂区114内的氢离子的掺杂浓度。As shown in FIG. 4, step 4) is performed next, and hydrogen ion implantation is performed on the second main surface of the substrate 101 to form a hydrogen ion doped region 114 in the second main surface, and the oxygen ions The defect layer 113 is located in the hydrogen ion doped region 114; the hole lifetime of the transition region and the terminal region is reduced by the oxygen ion defect layer 113, and the oxygen ions of the oxygen ion defect layer 113 act as an adsorbent of hydrogen ions Thus, the doping concentration of hydrogen ions in the hydrogen ion doped region 114 is increased.
在本实施例中，所述氢离子注入包括对所述衬底101的第二主面进行多次氢离子注入并退火，以使所述氢离子掺杂区114具有不同氢离子掺杂浓度的多个氢离子掺杂层，多个所述氢离子掺杂层的氢离子掺杂浓度自所述第二主面向所述第一主面的方向逐渐减小。例如，所述氢离子注入的氢离子注入剂量介于5e11～5e16cm -2之间，氢离子注入能量介于200KeV～1.5MeV之间，所述退火的温度介于300℃～500℃之间，退火时间介于0.5h～5h之间。具体地，所述氢离子注入的次数介于2次～4次之间，通过调整每次所述氢离子注入的剂量和能量，在退火后可以在所述衬底101中形成具有多个不同掺杂峰的氢离子掺杂层，例如，在本实施例中，所述氢离子掺杂区114中具有四个不同的掺杂峰，例如包括第一掺杂峰141、第二掺杂峰142、第三掺杂峰143和第四掺杂峰144，如图4所示。 In this embodiment, the hydrogen ion implantation includes multiple times of hydrogen ion implantation and annealing on the second main surface of the substrate 101, so that the hydrogen ion doped region 114 has different hydrogen ion doping concentrations. A plurality of hydrogen ion doped layers, the hydrogen ion doping concentration of the plurality of hydrogen ion doped layers gradually decreases from the second main surface toward the first main surface. For example, the hydrogen ion implantation dose of the hydrogen ion implantation is between 5e11-5e16cm -2 , the hydrogen ion implantation energy is between 200KeV-1.5MeV, and the annealing temperature is between 300°C-500°C, The annealing time is between 0.5h and 5h. Specifically, the number of hydrogen ion implantation is between 2 and 4 times, and by adjusting the dose and energy of each hydrogen ion implantation, a plurality of different A hydrogen ion-doped layer with doped peaks, for example, in this embodiment, the hydrogen ion-doped region 114 has four different doped peaks, for example including a first doped peak 141, a second doped peak 142 , a third doping peak 143 and a fourth doping peak 144 , as shown in FIG. 4 .
本实施例中，在一定氢注入条件下，增加氧离子，可以增加氢离子吸附体，从而增加N型掺杂浓度，即可以有效增加缓冲层总浓度，进而在IGBT器件导通时，进一步降低IGBT器件过渡区和终端区背面P型集电极的发射效率。In this embodiment, under certain hydrogen implantation conditions, increasing oxygen ions can increase the hydrogen ion adsorbent, thereby increasing the N-type doping concentration, that is, the total concentration of the buffer layer can be effectively increased, and further reduced when the IGBT device is turned on. The emission efficiency of the P-type collector on the back side of the IGBT device transition region and termination region.
基于上述，通过氧离子缺陷层113，一方面，可以降低过渡区和终端区的空穴寿命，从而在IGBT器件导通时，降低了IGBT过渡区和终端区背面P型集电极的发射效率，另一 方面，氧离子缺陷层113的氧离子作为氢离子的吸附体，可以增加氢离子掺杂区114内的氢离子的掺杂浓度，在IGBT器件导通时，进一步降低IGBT器件过渡区和终端区背面P型集电极的发射效率。由于氧离子缺陷层113可以降低IGBT器件过渡区和终端区背面P型集电极的发射效率，则当IGBT器件在导通时，降低了从IGBT器件过渡区和终端区背面P型集电极的注入的空穴量，同时IGBT器件背面过渡区和终端区背面存在低寿命区(氧离子缺陷层113)，在IGBT器件关断时会加快过渡区和终端区电子和空穴复合速度，减少了从过渡区开孔处抽出的空穴量，缓解电流集中问题。Based on the above, through the oxygen ion defect layer 113, on the one hand, the hole life of the transition region and the termination region can be reduced, thereby reducing the emission efficiency of the P-type collector on the back of the IGBT transition region and the termination region when the IGBT device is turned on, On the other hand, the oxygen ions in the oxygen ion defect layer 113 serve as adsorbents for hydrogen ions, which can increase the doping concentration of hydrogen ions in the hydrogen ion doped region 114, and further reduce the IGBT device transition region and Emission efficiency of the P-type collector on the backside of the termination region. Since the oxygen ion defect layer 113 can reduce the emission efficiency of the P-type collector on the back side of the IGBT device transition region and the terminal region, when the IGBT device is turned on, the injection from the P-type collector on the back side of the IGBT device transition region and the terminal region is reduced. At the same time, there is a low-life region (oxygen ion defect layer 113) on the back side of the transition region and the termination region of the IGBT device. The amount of holes extracted from the openings in the transition zone alleviates the problem of current concentration.
如图5所示，最后进行步骤5)，于所述衬底101的第二主面形成背面金属115，以完成所述IGBT器件的制作。例如，所述背面金属115可以为Al/Ti/Ni/Ag金属叠层。As shown in FIG. 5 , step 5) is finally performed to form the back metal 115 on the second main surface of the substrate 101 to complete the fabrication of the IGBT device. For example, the back metal 115 may be an Al/Ti/Ni/Ag metal stack.
实施例2Example 2
如图5所示，本实施例提供一种IGBT器件，所述IGBT器件包括：衬底101，所述衬底101包括相对的第一主面及第二主面，所述第一主面形成有IGBT器件的正面结构，所述IGBT器件包括有源区、过渡区及终端区；氧离子缺陷层113，形成于所述过渡区及终端区的第二主面内；集电极区112，形成于所述衬底101的第二主面；氢离子掺杂区114，形成于所述衬底101的第二主面内，所述氧离子缺陷层113位于所述氢离子掺杂区114内；通过所述氧离子缺陷层113降低过渡区和终端区的空穴寿命，同时所述氧离子缺陷层113的氧离子作为氢离子的吸附体从而增加所述氢离子掺杂区114内的氢离子的掺杂浓度。As shown in Figure 5, this embodiment provides an IGBT device, the IGBT device includes: a substrate 101, the substrate 101 includes an opposite first main surface and a second main surface, the first main surface forms There is a front structure of the IGBT device, the IGBT device includes an active region, a transition region and a terminal region; an oxygen ion defect layer 113 is formed in the second main surface of the transition region and the termination region; the collector region 112 is formed On the second main surface of the substrate 101; the hydrogen ion doped region 114 is formed in the second main surface of the substrate 101, and the oxygen ion defect layer 113 is located in the hydrogen ion doped region 114 ; Reduce the hole lifetime of the transition region and the terminal region by the oxygen ion defect layer 113, while the oxygen ion of the oxygen ion defect layer 113 acts as an adsorbent of hydrogen ions so as to increase the hydrogen in the hydrogen ion doped region 114 ion doping concentration.
例如，所述衬底101可以是单晶硅衬底。在一些实施例中所述衬底也可由其它材料制成，例如但不限于硅锗或锗。在其它实施例中，所述衬底101还可以为包括其他元素半导体或化合物半导体的衬底，例如砷化镓、磷化铟或碳化硅等。For example, the substrate 101 may be a single crystal silicon substrate. The substrate may also be made of other materials in some embodiments, such as but not limited to silicon germanium or germanium. In other embodiments, the substrate 101 may also be a substrate including other element semiconductors or compound semiconductors, such as gallium arsenide, indium phosphide, or silicon carbide.
如图5所示，所述IGBT器件的有源区包括设置于所述衬底101的第一主面的阱区108、沟槽栅结构、发射极区109及载流子存储掺杂区107，所述沟槽栅结构贯穿所述阱区108至所述衬底101中，所述沟槽栅结构包括延伸至所述阱区108下方的沟槽、位于所述沟槽侧壁 的栅介质层105及填充于所述沟槽中的多晶硅层106，所述发射极区109设置于所述阱区108内，且位于所述沟槽栅结构的侧面，所述载流子存储掺杂区107设置于所述阱区108下方。所述过渡区包括设置于所述衬底101的第一主面的阱区108以及与所述阱区108连接的连接孔，所述IGBT器件的终端区包括位于所述衬底101的第一主面上的场氧层103及位于所述终端区边缘的截止环104，所述过渡区与所述终端区还包括横跨所述过渡区与所述终端区的横向变掺杂层102。所述IGBT器件的第一主面上还形成有绝缘层110，所述绝缘层110上形成有正面金属111，所述正面金属111包括发射极金属层及栅极金属层，所述发射极金属通过连接孔与所述有源区的发射极区109及阱区108连接，同时通过连接孔与所述过渡区的阱区108连接，所述栅极金属层与所述沟槽栅结构中的多晶硅层106连接，在本实施例中，所述栅极金属层设置于所述终端区的场氧层103上方，以节省有源区的面积，同时便于沟槽栅结构的电引出。As shown in FIG. 5, the active region of the IGBT device includes a well region 108 disposed on the first main surface of the substrate 101, a trench gate structure, an emitter region 109 and a carrier storage doped region 107. The trench gate structure penetrates the well region 108 into the substrate 101, the trench gate structure includes a trench extending below the well region 108, and a gate dielectric located on the sidewall of the trench Layer 105 and the polysilicon layer 106 filled in the trench, the emitter region 109 is set in the well region 108 and is located on the side of the trench gate structure, the carrier storage doped region 107 is disposed under the well region 108 . The transition region includes a well region 108 disposed on the first main surface of the substrate 101 and a connection hole connected to the well region 108, and the terminal region of the IGBT device includes a first The field oxygen layer 103 on the main surface and the stop ring 104 located at the edge of the termination region, the transition region and the termination region also include a lateral variable doping layer 102 across the transition region and the termination region. An insulating layer 110 is also formed on the first main surface of the IGBT device. A front metal 111 is formed on the insulating layer 110. The front metal 111 includes an emitter metal layer and a gate metal layer. The emitter metal It is connected to the emitter region 109 and the well region 108 of the active region through a connection hole, and is connected to the well region 108 of the transition region through a connection hole, and the gate metal layer is connected to the trench gate structure. The polysilicon layer 106 is connected. In this embodiment, the gate metal layer is disposed above the field oxide layer 103 in the terminal region, so as to save the area of the active region and facilitate the electrical extraction of the trench gate structure.
在本实施例中，所述IGBT器件基于N型衬底101实现，所述衬底101为N型掺杂，所述阱区108为P型掺杂，所述发射极区109为N型掺杂，所述载流子存储掺杂区107为N型掺杂，所述截止环104为N型掺杂，所述横向变掺杂层102为P型掺杂。上述各掺杂区的离子掺杂浓度可依据器件的导通电阻、反向耐压性能等参数设定。In this embodiment, the IGBT device is implemented based on an N-type substrate 101, the substrate 101 is N-type doped, the well region 108 is P-type doped, and the emitter region 109 is N-type doped The carrier storage doped region 107 is N-type doped, the stop ring 104 is N-type doped, and the lateral variable doping layer 102 is P-type doped. The ion doping concentration of the above-mentioned doping regions can be set according to parameters such as on-resistance and reverse withstand voltage performance of the device.
作为示例，所述氧离子缺陷层113包含的氧离子注入剂量介于1e10cm -2～1e15cm -2之间，氧离子注入能量介于200KeV～15MeV之间。在一具体的实施例中，所述氧离子注入的氧离子注入剂量为1e13cm -2，氧离子注入能量为1MeV。在又一具体的实施例中，所述氧离子注入的氧离子注入剂量为1e14cm -2，氧离子注入能量为3MeV。所述氧离子注入可以在所述衬底101中形成氧离子缺陷层113，一方面，在IGBT器件过渡区和终端区背面设置氧离子缺陷层113，降低了过渡区和终端区的空穴寿命，进而在IGBT器件导通时，降低了IGBT过渡区和终端区背面P型集电极的发射效率。另一方面，后续可以通过一个或者多个氢离子吸附在氧杂质和自间隙上形成N型掺杂，在一定氢注入条件下，增加氧离子可以增加氢离子吸附载体， 增加N型掺杂浓度，即可以有效增加缓冲层总浓度，进而在IGBT器件导通时，进一步降低IGBT器件过渡区和终端区背面P型集电极的发射效率。又一方面，氧离子缺陷层113可以降低IGBT器件过渡区和终端区背面P型集电极的发射效率，IGBT器件在导通时，降低了从IGBT器件过渡区和终端区背面P型集电极的注入的空穴量，同时IGBT器件背面过渡区和终端区背面存在低寿命区(氧离子缺陷层113)，在IGBT器件关断时会加快过渡区和终端区电子和空穴复合速度，减少了从过渡区开孔处抽出的空穴量，缓解电流集中问题。 As an example, the oxygen ion implantation dose contained in the oxygen ion defect layer 113 is between 1e10cm −2 ~ 1e15cm −2 , and the oxygen ion implantation energy is between 200KeV ~ 15MeV. In a specific embodiment, the oxygen ion implantation dose of the oxygen ion implantation is 1e13cm -2 , and the oxygen ion implantation energy is 1MeV. In yet another specific embodiment, the oxygen ion implantation dose of the oxygen ion implantation is 1e14cm -2 , and the oxygen ion implantation energy is 3MeV. The oxygen ion implantation can form an oxygen ion defect layer 113 in the substrate 101. On the one hand, the oxygen ion defect layer 113 is provided on the back of the transition region and the termination region of the IGBT device, which reduces the hole lifetime of the transition region and the termination region. , and then when the IGBT device is turned on, the emission efficiency of the P-type collector on the back of the IGBT transition region and the terminal region is reduced. On the other hand, one or more hydrogen ions can be adsorbed on oxygen impurities and self-gap to form N-type doping in the follow-up. Under certain hydrogen implantation conditions, increasing oxygen ions can increase hydrogen ion adsorption carriers and increase N-type doping concentration. , which can effectively increase the total concentration of the buffer layer, and further reduce the emission efficiency of the P-type collector on the back of the IGBT device transition region and the terminal region when the IGBT device is turned on. On the other hand, the oxygen ion defect layer 113 can reduce the emission efficiency of the P-type collector on the back side of the IGBT device transition region and the terminal region. The amount of holes injected, while there is a low-life region (oxygen ion defect layer 113) on the back side of the IGBT device transition region and the back side of the terminal region, when the IGBT device is turned off, the electron and hole recombination speed in the transition region and the terminal region will be accelerated, reducing the The amount of holes extracted from the openings in the transition region alleviates the problem of current concentration.
所述集电极区112包含的导电掺杂离子注入剂量为1e12-1e14cm -2之间，导电掺杂离子注入能量介于20KeV～60KeV之间。例如，所述导电掺杂离子例如可以为硼或硼的化合物。 The implantation dose of conductive dopant ions contained in the collector region 112 is between 1e12-1e14cm −2 , and the implantation energy of conductive dopant ions is between 20KeV˜60KeV. For example, the conductive dopant ions may be boron or boron compounds, for example.
如图5所示，所述氢离子掺杂区114具有不同氢离子掺杂浓度的多个氢离子掺杂层，多个所述氢离子掺杂层的氢离子掺杂浓度自所述第二主面向所述第一主面的方向逐渐减小。所述氢离子掺杂区114包含的氢离子注入剂量介于5e11～5e16cm -2之间，氢离子注入能量介于200KeV～1.5MeV之间。具体地，所述氢离子掺杂区114具有2个～4个不同氢离子掺杂浓度的氢离子掺杂层，本实施例通过调整每次所述氢离子注入的剂量和能量，在退火后可以在所述衬底101中形成具有多个不同掺杂峰的氢离子掺杂层了，例如，在本实施例中，所述氢离子掺杂区114中具有四个不同的掺杂峰，例如包括第一掺杂峰141、第二掺杂峰142、第三掺杂峰143和第四掺杂峰144。 As shown in FIG. 5 , the hydrogen ion doped region 114 has multiple hydrogen ion doped layers with different hydrogen ion doping concentrations, and the hydrogen ion doping concentrations of the multiple hydrogen ion doped layers are from the second The main faces gradually decrease in the direction of the first main face. The hydrogen ion implantation dose contained in the hydrogen ion doped region 114 is between 5e11˜5e16 cm −2 , and the hydrogen ion implantation energy is between 200 KeV˜1.5 MeV. Specifically, the hydrogen ion doped region 114 has 2 to 4 hydrogen ion doped layers with different hydrogen ion doping concentrations. In this embodiment, by adjusting the dose and energy of each hydrogen ion implantation, after annealing A hydrogen ion doped layer with multiple different doping peaks can be formed in the substrate 101. For example, in this embodiment, the hydrogen ion doped region 114 has four different doping peaks, For example, it includes a first doping peak 141 , a second doping peak 142 , a third doping peak 143 and a fourth doping peak 144 .
如图5所示，所述衬底101的第二主面还形成有背面金属115。例如，所述背面金属115可以为Al/Ti/Ni/Ag金属叠层。As shown in FIG. 5 , a back metal 115 is also formed on the second main surface of the substrate 101 . For example, the back metal 115 may be an Al/Ti/Ni/Ag metal stack.
如上所述，本发明的IGBT器件及其制作方法，具有以下有益效果：As mentioned above, the IGBT device of the present invention and its manufacturing method have the following beneficial effects:
本发明在IGBT器件过渡区和终端区背面设置氧离子缺陷层113，降低了过渡区和终端区的空穴寿命，进而在IGBT器件导通时，降低了IGBT过渡区和终端区背面P型集电极的发射效率。In the present invention, an oxygen ion defect layer 113 is arranged on the back of the transition region and the termination region of the IGBT device, which reduces the hole lifetime of the transition region and the termination region, and then reduces the P-type concentration on the back of the IGBT transition region and the termination region when the IGBT device is turned on. Electrode emission efficiency.
本发明通过一个或者多个氢离子吸附在氧杂质和自间隙上形成N型掺杂，在一定氢注 入条件下，增加氧离子可以增加氢离子吸附载体，增加N型掺杂浓度，即可以有效增加缓冲层总浓度，进而在IGBT器件导通时，进一步降低IGBT器件过渡区和终端区背面P型集电极的发射效率。In the present invention, one or more hydrogen ions are adsorbed on oxygen impurities and self-gap to form N-type doping. Under certain hydrogen implantation conditions, increasing oxygen ions can increase the hydrogen ion adsorption carrier and increase the N-type doping concentration, which can effectively Increase the total concentration of the buffer layer, and further reduce the emission efficiency of the P-type collector on the back of the IGBT device transition region and the terminal region when the IGBT device is turned on.
本发明的氧离子缺陷层113可以降低过渡区和终端区背面P型集电极的-发射效率，在IGBT器件导通时，可以降低从IGBT器件过渡区和终端区背面P型集电极的注入的空穴量，在IGBT器件关断时会加快过渡区和终端区电子和空穴复合速度，减少了从过渡区开孔处抽出的空穴量，缓解电流集中问题。The oxygen ion defect layer 113 of the present invention can reduce the emission efficiency of the P-type collector on the back side of the transition region and the terminal region, and can reduce the injection efficiency from the P-type collector on the back side of the IGBT device transition region and the terminal region when the IGBT device is turned on. The amount of holes, when the IGBT device is turned off, will accelerate the recombination speed of electrons and holes in the transition region and the terminal region, reduce the amount of holes extracted from the openings in the transition region, and alleviate the problem of current concentration.
本发明在IGBT器件过渡区和终端区背面增加氧离子缺陷层113，在IGBT器件导通时，可以降低过渡区和终端区的发射效率，同时在IGBT器件关断时，可以提高过渡区和终端区电子和空穴复合速度，从而有效缓解过渡区存在的电流集中问题，提高IGBT芯片的可靠性。In the present invention, an oxygen ion defect layer 113 is added on the back of the IGBT device transition region and terminal region. When the IGBT device is turned on, the emission efficiency of the transition region and the terminal region can be reduced. At the same time, when the IGBT device is turned off, the transition region and the terminal region can be improved. The recombination speed of electrons and holes in the region can be effectively alleviated, and the current concentration problem in the transition region can be effectively alleviated, and the reliability of the IGBT chip can be improved.
所以，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial application value.
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。The above-mentioned embodiments only illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.

Claims (14)

  1. 一种IGBT器件的制作方法，其特征在于，所述制作方法包括步骤：A manufacturing method of an IGBT device, characterized in that the manufacturing method comprises the steps of:
    提供一衬底，所述衬底包括相对的第一主面及第二主面，于所述第一主面完成IGBT器件的正面工艺，形成所述IGBT器件的有源区、过渡区及终端区；A substrate is provided, the substrate includes opposite first main surface and second main surface, the front process of the IGBT device is completed on the first main surface, and the active region, the transition region and the terminal of the IGBT device are formed district;
    通过图形掩膜对所述过渡区及终端区的第二主面进行氧离子注入，以在所述过渡区及终端区的第二主面内形成氧离子缺陷层；performing oxygen ion implantation on the second main surface of the transition region and the terminal region through a pattern mask, so as to form an oxygen ion defect layer in the second main surface of the transition region and the terminal region;
    对所述衬底的第二主面进行导电掺杂离子注入，以在所述衬底的第二主面形成集电极区；performing conductive dopant ion implantation on the second main surface of the substrate to form a collector region on the second main surface of the substrate;
    对所述衬底的第二主面进行氢离子注入，以在所述的第二主面内形成氢离子掺杂区，所述氧离子缺陷层位于所述氢离子掺杂区内，其中，所述氧离子缺陷层的氧离子作为氢离子的吸附体从而增加所述氢离子掺杂区内的氢离子的掺杂浓度。performing hydrogen ion implantation on the second main surface of the substrate to form a hydrogen ion doped region in the second main surface, the oxygen ion defect layer is located in the hydrogen ion doped region, wherein, Oxygen ions in the oxygen ion defect layer serve as adsorbents for hydrogen ions so as to increase the doping concentration of hydrogen ions in the hydrogen ion doped region.
  2. 根据权利要求1所述的IGBT器件的制作方法，其特征在于：所述IGBT器件的有源区包括设置于所述衬底的第一主面的阱区、沟槽栅结构、发射极区及载流子存储掺杂区，所述沟槽栅结构贯穿所述阱区至所述衬底中，所述发射极区设置于所述阱区内，且位于所述沟槽栅结构的侧面，所述载流子存储掺杂区设置于所述阱区下方。The method for manufacturing an IGBT device according to claim 1, wherein the active region of the IGBT device includes a well region, a trench gate structure, an emitter region and a well region disposed on the first main surface of the substrate. a carrier storage doped region, the trench gate structure penetrates the well region into the substrate, the emitter region is disposed in the well region and is located on a side of the trench gate structure, The carrier storage doped region is disposed under the well region.
  3. 根据权利要求2所述的IGBT器件的制作方法，其特征在于：所述过渡区包括设置于所述衬底的第一主面的阱区以及与所述阱区连接的连接孔，所述IGBT器件的终端区包括位于所述衬底的第一主面上的场氧层及位于所述终端区边缘的截止环，所述过渡区与所述终端区还包括横跨所述过渡区与所述终端区的横向变掺杂层。The method for manufacturing an IGBT device according to claim 2, wherein the transition region includes a well region provided on the first main surface of the substrate and a connection hole connected to the well region, and the IGBT The termination region of the device includes a field oxygen layer located on the first main surface of the substrate and a stop ring located at the edge of the termination region, and the transition region and the termination region also include The lateral variable doping layer of the terminal region.
  4. 根据权利要求1所述的IGBT器件的制作方法，其特征在于：所述氧离子注入的氧离子注入剂量介于1e10cm -2～1e15cm -2之间，氧离子注入能量介于200KeV～15MeV之间。 The manufacturing method of an IGBT device according to claim 1, characterized in that: the oxygen ion implantation dose of the oxygen ion implantation is between 1e10cm -2 ~ 1e15cm -2 , and the oxygen ion implantation energy is between 200KeV ~ 15MeV .
  5. 根据权利要求1所述的IGBT器件的制作方法，其特征在于：所述导电掺杂离子注入的导电离子注入剂量为1e12-1e14cm -2之间，导电离子注入能量介于20KeV～60KeV之间，然后还包括采用激光退火工艺激活所述导电掺杂离子，激光的能量介于1J～2J之间，或采用炉管退火工艺激活所述导电掺杂离子，退火温度介于400～500℃之间。 The manufacturing method of an IGBT device according to claim 1, characterized in that: the conductive ion implantation dose of the conductive dopant ion implantation is between 1e12-1e14cm −2 , the conductive ion implantation energy is between 20KeV～60KeV, Then it also includes using laser annealing process to activate the conductive dopant ions, the energy of the laser is between 1J and 2J, or using a furnace tube annealing process to activate the conductive dopant ions, and the annealing temperature is between 400-500°C. .
  6. 根据权利要求1所述的IGBT器件的制作方法，其特征在于：所述氢离子注入包括对所述衬底的第二主面进行多次氢离子注入并退火，以使所述氢离子掺杂区具有不同氢离子掺杂浓度的多个氢离子掺杂层，多个所述氢离子掺杂层的氢离子掺杂浓度自所述第二主面向所述第一主面的方向逐渐减小。The manufacturing method of an IGBT device according to claim 1, wherein the hydrogen ion implantation includes multiple hydrogen ion implantations and annealing on the second main surface of the substrate, so that the hydrogen ion doping The region has a plurality of hydrogen ion doped layers with different hydrogen ion doping concentrations, and the hydrogen ion doping concentrations of the plurality of hydrogen ion doped layers gradually decrease from the second main surface in the direction of the first main surface .
  7. 根据权利要求6所述的IGBT器件的制作方法，其特征在于：所述氢离子注入的氢离子注入剂量介于5e11～5e16cm -2之间，氢离子注入能量介于200KeV～1.5MeV之间，所述退火的温度介于300℃～500℃之间，退火时间介于0.5h～5h之间。 The manufacturing method of an IGBT device according to claim 6, characterized in that: the hydrogen ion implantation dose of the hydrogen ion implantation is between 5e11～5e16cm −2 , the hydrogen ion implantation energy is between 200KeV～1.5MeV, The annealing temperature is between 300°C and 500°C, and the annealing time is between 0.5h and 5h.
  8. 一种IGBT器件，其特征在于，所述IGBT器件包括：A kind of IGBT device, is characterized in that, described IGBT device comprises:
    衬底，所述衬底包括相对的第一主面及第二主面，所述第一主面形成有IGBT器件的正面结构，所述IGBT器件包括有源区、过渡区及终端区；a substrate, the substrate includes an opposite first main surface and a second main surface, the first main surface is formed with a front structure of an IGBT device, and the IGBT device includes an active region, a transition region and a terminal region;
    氧离子缺陷层，形成于所述过渡区及终端区的第二主面内；an oxygen ion defect layer formed in the second main surface of the transition region and the termination region;
    集电极区，形成于所述衬底的第二主面；a collector region formed on the second main surface of the substrate;
    氢离子掺杂区，形成于所述衬底的第二主面内，所述氧离子缺陷层位于所述氢离子掺杂区内，其中，所述氧离子缺陷层的氧离子作为氢离子的吸附体从而增加所述氢离子掺杂区内的氢离子的掺杂浓度。a hydrogen ion doped region formed in the second main surface of the substrate, the oxygen ion defect layer is located in the hydrogen ion doped region, wherein the oxygen ions in the oxygen ion defect layer serve as hydrogen ions The adsorbent thus increases the doping concentration of hydrogen ions in the hydrogen ion doped region.
  9. 根据权利要求8所述的IGBT器件，其特征在于：所述IGBT器件的有源区包括设置于所述衬底的第一主面的阱区、沟槽栅结构、发射极区及载流子存储掺杂区，所述沟槽栅结构贯穿所述阱区至所述衬底中，所述发射极区设置于所述阱区内，且位于所述沟槽栅结构的侧面，所述载流子存储掺杂区设置于所述阱区下方。The IGBT device according to claim 8, wherein the active region of the IGBT device includes a well region, a trench gate structure, an emitter region and a carrier region disposed on the first main surface of the substrate. storage doped region, the trench gate structure penetrates the well region into the substrate, the emitter region is disposed in the well region and is located on the side of the trench gate structure, the carrying The carrier doped region is disposed under the well region.
  10. 根据权利要求9所述的IGBT器件，其特征在于：所述过渡区包括设置于所述衬底的第一主面的阱区以及与所述阱区连接的连接孔，所述IGBT器件的终端区包括位于所述衬底的第一主面上的场氧层及位于所述终端区边缘的截止环，所述过渡区与所述终端区还包括横跨所述过渡区与所述终端区的横向变掺杂层。The IGBT device according to claim 9, wherein the transition region includes a well region disposed on the first main surface of the substrate and a connection hole connected to the well region, and the terminal of the IGBT device The region includes a field oxygen layer on the first main surface of the substrate and a stop ring on the edge of the termination region, and the transition region and the termination region also include The lateral variable doping layer.
  11. 根据权利要求8所述的IGBT器件，其特征在于：所述氧离子缺陷层包含的氧离子注入剂量介于1e10cm -2～1e15cm -2之间，氧离子注入能量介于200KeV～15MeV之间。 The IGBT device according to claim 8, characterized in that: the oxygen ion implantation dose contained in the oxygen ion defect layer is between 1e10cm -2 ~ 1e15cm -2 , and the oxygen ion implantation energy is between 200KeV ~ 15MeV.
  12. 根据权利要求8所述的IGBT器件，其特征在于：所述集电极区包含的导电掺杂离子注入剂量为1e12-1e14cm -2之间，导电掺杂离子注入能量介于20KeV～60KeV之间。 The IGBT device according to claim 8, wherein the conductive dopant ion implantation dose contained in the collector region is between 1e12-1e14cm −2 , and the implantation energy of the conductive dopant ion is between 20KeV˜60KeV.
  13. 根据权利要求8所述的IGBT器件，其特征在于：所述氢离子掺杂区具有不同氢离子掺杂浓度的多个氢离子掺杂层，多个所述氢离子掺杂层的氢离子掺杂浓度自所述第二主面向所述第一主面的方向逐渐减小。The IGBT device according to claim 8, characterized in that: the hydrogen ion doped region has a plurality of hydrogen ion doped layers with different hydrogen ion doping concentrations, and the hydrogen ion doped layers of the plurality of hydrogen ion doped layers are The impurity concentration gradually decreases from the second main surface in the direction of the first main surface.
  14. 根据权利要求8所述的IGBT器件，其特征在于：所述氢离子掺杂区包含的氢离子注入剂量介于5e11～5e16cm -2之间，氢离子注入能量介于200KeV～1.5MeV之间。 The IGBT device according to claim 8, wherein the hydrogen ion implantation dose contained in the hydrogen ion doped region is between 5e11˜5e16 cm −2 , and the hydrogen ion implantation energy is between 200 KeV˜1.5 MeV.
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