WO2022264210A1 - 半導体レーザー装置および半導体レーザー装置の製造方法 - Google Patents
半導体レーザー装置および半導体レーザー装置の製造方法 Download PDFInfo
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H01S5/00—Semiconductor lasers
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- H01S5/4031—Edge-emitting structures
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Definitions
- This application relates to a semiconductor laser device and a method for manufacturing a semiconductor laser device.
- the present application discloses a technology for solving the above-described problems.
- a semiconductor laser device capable of vertically extracting light from a plurality of light sources integrated in one chip, the chip side face It is an object of the present invention to provide a semiconductor laser device that can be manufactured only by coating two facets.
- the semiconductor laser device disclosed in the present application is a substrate, a semiconductor laser device having a plurality of parallel-mounted laser light sources for emitting laser light in the longitudinal direction of the substrate; a mirror mounted facing the laser light source and reflecting the laser light emitted from the laser light source in a direction orthogonal to the surface of the substrate; a lens disposed adjacent to the mirror and mounted on the side where the laser beam reflected by the mirror travels; It is characterized by having
- the semiconductor laser device disclosed in the present application in a semiconductor laser device capable of extracting light from a plurality of light sources integrated in one chip in the vertical direction, it is possible to manufacture the semiconductor laser device only by end surface coating on two sides of the chip side surface. It is possible to provide a semiconductor laser device capable of achieving the above.
- FIG. 1 is a top view showing a semiconductor laser device according to Embodiment 1;
- FIG. FIG. 2 is a partially enlarged view of FIG. 1;
- 1 is a cross-sectional view showing a semiconductor laser device according to Embodiment 1;
- FIG. 1 is a cross-sectional view showing a semiconductor laser device according to Embodiment 1;
- FIG. 1 is a cross-sectional view showing a semiconductor laser device according to Embodiment 1;
- FIG. 1 is a cross-sectional view showing a semiconductor laser device according to Embodiment 1;
- FIG. 1 is a cross-sectional view showing a semiconductor laser device according to Embodiment 1;
- FIG. 1 is a cross-sectional view showing a semiconductor laser device according to Embodiment 1;
- FIG. 10 is a top view showing a semiconductor laser device according to Embodiment 2; 5 is a cross-sectional view showing a semiconductor laser device according to Embodiment 2; FIG. 5 is a cross-sectional view showing a semiconductor laser device according to Embodiment 2; FIG. 5 is a cross-sectional view showing a semiconductor laser device according to Embodiment 2; FIG. 11 is a top view showing a semiconductor laser device according to Embodiment 3; FIG. 8 is a cross-sectional view showing a semiconductor laser device according to Embodiment 3; FIG. 8 is a cross-sectional view showing a semiconductor laser device according to Embodiment 3; FIG. 8 is a cross-sectional view showing a semiconductor laser device according to Embodiment 3; FIG.
- FIG. 8 is a cross-sectional view showing a semiconductor laser device according to Embodiment 3;
- FIG. 8 is a cross-sectional view showing a semiconductor laser device according to Embodiment 3;
- 1 is a sectional view showing a semiconductor laser device according to Embodiments 1 to 3;
- FIG. 12A and 12B are a top view and a cross-sectional view showing a semiconductor laser device according to a fourth embodiment;
- FIG. FIG. 4 is a process explanatory view when performing end surface coating in the semiconductor laser device according to the first embodiment;
- FIG. 4 is an explanatory diagram of a case where end surface coating is performed using a jig in the semiconductor laser device according to the first embodiment;
- This application relates to a semiconductor laser device equipped with mirrors, lenses, and multiple active layers for changing the traveling direction of light. A specific embodiment of this semiconductor laser device will be described below with reference to the drawings.
- Embodiment 1 A semiconductor laser device 100 according to Embodiment 1 will be described in detail below with reference to FIGS. 1 to 7.
- FIG. 1 A semiconductor laser device 100 according to Embodiment 1 will be described in detail below with reference to FIGS. 1 to 7.
- FIG. 2 is an enlarged view of the central portion P of the semiconductor laser device 100 shown in FIG.
- FIG. 3 is a cross-sectional view taken along line EE of FIG.
- the submount 30 is arranged all over the bottom in the thickness direction, and the submount electrode 31 that is in contact with the submount 30 is interposed above the submount 30, and is bonded by solder 33.
- a semiconductor laser element 50 (corresponding to the portion surrounded by the dotted line in FIG. 3) is mounted.
- the semiconductor laser device 50 includes an optical system composed of mirrors and lenses arranged in the central portion P (see FIG. 1), a plurality of light sources arranged in the peripheral portion of the optical system, the optical system, and a substrate 51 on which the light source is mounted (these components will be described in detail below). It is connected to the wire 5 through a submount electrode 32 which is separated from the submount electrode 31 and arranged at another position on the submount 30 .
- the submount 30 is made of aluminum nitride (AlN), the submount electrodes 31 and 32 formed on the submount 30 are made of Au, the solder 33 is made of Sn/Ag, and the wires 5 are made of Sn/Ag. is made of Au.
- the material of the submount 30 is a ceramic material such as alumina (Al 2 O 3 ), the material of the submount electrodes 31 and 32 is a conductive material such as Cu, Pt, and Si, and the material of the solder 33 is , Sn/Ag/Cu, Sn/Ag/Bi/In, Sn/Ag/Cu/Ni/Ge, Sn/Bi, Sn/Bi/Ag, Sn/Bi/Cu, etc., lead-free solder, wire 5 material It is also possible to use metal materials such as Au alloys, Cu, Al, and Ag.
- FIG. 1 taking the light source 1a and the light source 1b shown in FIG. 1 as representative examples, the trajectories (light traces) of the laser beams emitted from the six light sources 1a to 1f of the semiconductor laser device 100 will be described first. explain. Note that both ends of the wire 5 are connected to the electrode 52 and the submount electrode 32 in FIG. Two electrodes 52 arranged on the left and right sides of the drawing are placed on a common insulating film 53 which will be described later.
- Light emitted from the light sources 1a to 1f travels in the left-right direction (hereinafter also referred to as the longitudinal direction) of the semiconductor laser device 100 shown in FIG.
- the direction of travel is changed using an optical system composed of lenses (here, lenses functioning as condensing lenses).
- the optical system is installed symmetrically with respect to the center line of the shape of the semiconductor laser device 100, here the line BB of the cross section corresponds to the center line of the shape.
- the light source groups 1a to 1c and the light source groups 1d to 1f are also installed substantially line symmetrically with respect to the shape center line.
- the emitted light emitted from the light source 1a is directed to the 45-degree triangular prism-shaped horizontal direction mirror 2 (hereinafter also referred to as the second mirror.
- the line BB of the cross section is a line corresponding to the center line of the shape of the second mirror), and after being reflected by the surface, the traveling direction is bent by about 90°, and the semiconductor laser element 50 It advances in the direction of a truncated square pyramid-shaped 45-degree vertical direction mirror 3 (hereinafter also referred to simply as a mirror) placed in the central portion (see light trace 10a in FIGS. 1 and 2).
- the light reaching the 45-degree vertical direction mirror 3 is then reflected by an inclined surface having an inclination angle of 45 degrees with respect to the substrate among the surfaces of the 45-degree angle vertical direction mirror 3, and then becomes hemispherical. 1 and 2 (the direction perpendicular to the paper surface) (see reflection point rp a in FIG. 2).
- the light emitted from the light source 1b is directed directly to the 45-degree vertical mirror 3 placed in the central portion of the semiconductor laser element 50 without passing through the 45-degree triangular prism-shaped horizontal mirror 2.
- 1 and 2 perpendicular to the paper surface
- the above-described inclined surface of the 45-degree vertical direction mirror 3 passing through the hemispherical lens 4. direction
- the light emitted from the light source 1c, the light source 1d, and the light source 1f travels along the same light trails as the light emitted from the light source 1a (see light trails 10c, 10d, and 10f in FIGS. 1 and 2, respectively).
- the light emitted from the light source 1e travels along the same light trail (see the light trail 10e in FIGS. 1 and 2) as the light emitted from the light source 1b.
- the optical system is installed symmetrically with respect to the center line of the shape of the semiconductor laser device 100, here, the line BB in the cross section corresponds to the center line of the shape. . Further, the light source groups 1a to 1c and the light source groups 1d to 1f are also installed substantially line symmetrically with respect to the shape center line.
- FIG. 4B a sectional view showing the AA section shown in FIG. 1
- FIG. 5B a sectional view showing the BB section
- FIG. 6B a sectional view showing the CC section
- FIG. 7 a cross-sectional view showing a cross-section
- FIG. 4A is a schematic diagram of the manufacturing process of the semiconductor laser element, which is surrounded by a dotted line frame on the left side of the figure and shows the outline divided into three stages, and A of FIG. 1 is shown on the right side of the figure. 2 of FIG. 4B, which is a cross-sectional view showing the -A cross section and is a configuration diagram for explaining details of the configuration when the semiconductor laser element 50 is mounted on the submount 30 and the constituent elements of the semiconductor laser element; It consists of one figure.
- the semiconductor laser element 50 includes an InP substrate 51, an InGaAsP active layer 55 formed on the substrate 51, an InGaAsP diffraction grating 56 formed on the active layer 55, A block layer 57 made of p-InP formed on the side of the substrate 51, the active layer 55, and the diffraction grating 56, a block layer 58 made of n-InP, and InP formed on the block layer 57 made of p-InP. a cladding layer 59 made of metal, a contact layer 60 made of InGaAs formed on the cladding layer 59, an insulating film 53 made of SiN formed on the contact layer 60, and an opening of the insulating film 53. It is composed of an Au electrode 52 formed on the portion where the contact layer 60 is exposed, and an Au substrate electrode 54 formed on the counter-active layer side.
- the material of the substrate 51 is GaAs instead of the above materials
- the material of the active layer 55 is AlGaInAs, GaInAsP or the like
- the material of the block layer 57 is Fe--InP or the like.
- SiO 2 or the like can be used as the material of the electrode 52 and the substrate electrode 54 can be Pt, Ag, Cu, or the like.
- FIG. 5A is a schematic diagram of the manufacturing process of the semiconductor laser device, which is surrounded by a dotted line frame on the left side of the figure and shows the outline divided into three stages, and FIG. 1B is shown on the right side of the figure.
- FIG. 5B is a cross-sectional view showing the -B cross section and is a configuration diagram for explaining the details of the configuration when the semiconductor laser element 50 is mounted on the submount 30 and the constituent elements of the semiconductor laser element. It consists of one figure.
- the semiconductor laser element 50 includes a substrate electrode 54, a substrate 51, a p-InP block layer 57, an n-InP block layer 58, and a p-InP block layer formed on the substrate.
- FIG. 6A and 6B are schematic diagrams of the manufacturing process of the semiconductor laser device, which are shown in three stages surrounded by dotted frames on the left side of the figure, and C of FIG. 1 shown on the right side of the figure. 2 of FIG. 6B, which is a cross-sectional view showing the -C cross section and is a configuration diagram for explaining the details of the configuration when the semiconductor laser element 50 is mounted on the submount 30 and the constituent elements of the semiconductor laser element; It consists of one figure.
- FIG. 6B shows a sectional view of the CC section in FIG.
- the semiconductor laser element 50 has a cross section similar to that in FIG. 5B for the periphery of the lens 4, and a cross section inside the range indicated by X1 in FIG. 4B for other portions.
- FIG. 7 shows a cross-sectional view of the DD cross section in FIG.
- the semiconductor laser element 50 has a cross section similar to that in FIG. 5B for the periphery of the lens 4, and a cross section inside the range indicated by X1 in FIG. 4B for other portions.
- the p-InP blocking layer 57 is completely cut away leaving a portion in the range indicated by X2 (size 8 to 30 ⁇ m). .
- the 45-degree triangular prism-shaped horizontal mirror 2 shown in FIG. 7 is also manufactured.
- grooves 62 shown in FIGS. 5B and 6B are formed at an angle of 45 degrees with respect to the upper surface by anisotropic etching using ClF 3 gas clusters, thereby forming a 45-degree vertical mirror in the form of a truncated square pyramid.
- the insulating film 53 by the CVD method for forming 3
- the insulating film 53 only on the upper part of the waveguide is removed by dry etching, and then the electrode 52 is formed in the opening of the insulating film 53 by the sputtering method.
- the grooves 62 are filled with the photosensitive acrylic resin 61 and the surface is flattened.
- the photosensitive acrylic resin 61 on the electrode pad portion is removed in the developing process.
- a lens 4 is formed from the photosensitive acrylic resin 61 on the upper portion of the 45-degree vertical direction mirror 3 in the form of a truncated square pyramid by a grayscale lithography process.
- a substrate electrode 54 is formed by sputtering.
- the photosensitive acrylic resin 61 is used for filling the grooves 62 and for flattening the surface.
- Other materials may be used as long as the ratio is 2.3 or less. It is also possible to use other anisotropic etching methods for forming the grooves 62 .
- the insulating film 53 can be formed by a sputtering method or the like, or the electrodes 52 and the substrate electrodes 54 can be formed by a vapor deposition method.
- FIG. 19 is composed of FIGS. 19A, 19B, and 19C for explaining the edge coating process.
- FIG. 19A is a diagram showing semiconductor laser elements 50a in a wafer state
- FIG. FIG. 4 is a diagram showing a semiconductor laser element 50c in a chip state
- FIG. 20 is a view of the semiconductor laser elements 50 arranged on a jig, viewed from the surface side (the front side in the direction perpendicular to the plane of the paper; the same shall apply hereinafter), in order to explain the end surface coating.
- 1 is a diagram in the case of arranging on the surface side of the .
- a semiconductor laser element is processed from a wafer state (see FIG. 19A) into a bar state (see FIG. 19B) by a cleavage process.
- a plurality of bar-shaped semiconductor laser elements 50b are arranged using a jig 70 shown in FIG. With both sides sandwiched between the Si dummy bars 71, adjustment is made with a plurality of adjusting screws 73 installed vertically and horizontally until the cavity 72 disappears. fixed.
- the reason why the Si dummy bar is adopted as the dummy bar is that the Si material does not cause distortion unlike metal materials, so that when it is tightened with a jig, local stress is not applied to the semiconductor laser element, and a natural oxide film is formed on the surface.
- the mirror that reflects the light in the horizontal direction with respect to the substrate changes the course of the light in the vertical direction with respect to the resonator, and directs the light to the central portion of the substrate.
- Light collected in the center of the substrate is reflected in the direction perpendicular to the substrate by a mirror that reflects the light in the direction perpendicular to the substrate. can be removed vertically. Therefore, it is possible to provide a semiconductor laser device that can be manufactured only by coating the two sides of the chip.
- the light bundled by the mirror that reflects the light in the horizontal direction with respect to the substrate and the mirror that reflects the light in the vertical direction with respect to the substrate can be extracted by combined light, making it easy to couple with an external optical fiber.
- Embodiment 2 A semiconductor laser device 101 according to Embodiment 2 will be described in detail below with reference to FIGS. 8 to 11.
- FIG. 8 A semiconductor laser device 101 according to Embodiment 2 will be described in detail below with reference to FIGS. 8 to 11.
- FIG. 8 is a top view of a semiconductor laser device according to Embodiment 2.
- FIG. The square pyramidal 45-degree vertical mirror 3 of Embodiment 1 is replaced with the square pyramidal 45-degree vertical mirror 3a, and the square pyramidal 45-degree vertical mirror 3a and 45-degree vertical mirror 3a are used.
- An Al coating 6 is applied to the surface of the triangular prism-shaped horizontal mirror 2 . Since the structure of the semiconductor laser element 50 around the lens 4 is different from that of the first embodiment, it will be explained using a cross-sectional view.
- FIG. 9 shows a cross-sectional view of BB in FIG.
- the semiconductor laser element 50 has a processed shape different from that of the substrate shown in FIG. 5B of the first embodiment, and has an Al coating 6 applied to the processed surface.
- FIG. 10 shows a cross-sectional view of CC in FIG.
- the semiconductor laser element 50 has the same cross section as in FIG. 9 for the lens periphery, and the same cross section as the section inside X1 in FIG. 4B of the first embodiment for the other portions.
- FIG. 11 shows a cross-sectional view along line DD in FIG.
- the semiconductor laser element 50 has the same cross section as in FIG. 9 for the lens periphery, and the same cross section as the section inside X1 in FIG. 4B of the first embodiment for the other portions.
- the Al coating 6 is applied to the surfaces of the 45-degree angle vertical direction mirror 3a and the 45-degree angle triangular columnar horizontal direction mirror 2.
- the Al coating 6 is not applied.
- Embodiment 3 A semiconductor laser device according to Embodiment 3 will be described below in order with reference to FIGS. 12 to 16.
- FIG. 12 to 16 A semiconductor laser device according to Embodiment 3 will be described below in order with reference to FIGS. 12 to 16.
- FIG. 12 is a top view of a semiconductor laser device 102 according to Embodiment 3.
- FIG. The 45-degree vertical mirror 3a and the 45-degree triangular columnar horizontal mirror 2 of the second embodiment are formed by concavely etching the semiconductor laser element 50, and the Al coating 6 is not applied.
- the lens 4 is formed on the back surface of the semiconductor laser element 50, and the semiconductor laser element 50 is used in a junction-down method in which the electrode on the active layer 55 side of the semiconductor laser element 50 is die-bonded. Therefore, the structure of the semiconductor laser element 50 around the lens 4, which is different from that of the second embodiment, will be described below with reference to cross-sectional views.
- FIG. 13 shows the EE cross-sectional view in FIG. 4B of the first embodiment, the semiconductor laser element 50 is left without being etched at the outer peripheral portion of the substrate, and the cushion layer 63 is formed on the contact layer 60 at the outer peripheral portion of the substrate. This is to reduce the thermal stress applied to the active layer 55 when die-bonded by the junction-down method.
- FIG. 14 shows a cross-sectional view of BB in FIG.
- the processing shape of the unevenness of the substrate is reversed from that in FIG. 9 of the second embodiment, and the Al coating 6 and the photosensitive acrylic resin 61 are not present.
- a lens 4 is formed on the anti-active layer side.
- FIG. 15 shows a cross-sectional view of CC in FIG.
- the semiconductor laser element 50 has the same cross section as in FIG. 14 for the lens periphery, and the same cross section as the section inside X1 in FIG. 13 for the other portions.
- FIG. 16 shows a cross-sectional view of DD in FIG.
- the semiconductor laser element 50 has the same cross section as in FIG. 14 for the lens periphery, and the same cross section as the section inside X1 in FIG. 13 for the other portions.
- the manufacturing process can be simplified because the flattening process for forming the lens is not required. Moreover, since it has a plurality of light-emitting layers, heat can be efficiently dissipated by using a junction-down system in which the total amount of current during use is high and the amount of heat generated is large.
- the semiconductor laser element 50 includes the lens 4, but from the viewpoint of improving productivity, it is also possible to combine light with an external lens.
- FIG. 18B is a cross-sectional view along the dotted line M1-M1 in FIG. 18A
- FIG. 18C is a cross-sectional view along the dotted line M2-M2 in FIG. 18A.
- the angles of the 45-degree triangular prism-shaped horizontal mirror and the 45-degree vertical mirror were set to 45 degrees, which is the most orthodox angle. Since it is sufficient to output light having an angle of 100 degrees (see FIGS. 2 and 18A), for example, as shown in FIGS. ) with respect to the substrate is formed at an angle of 80 degrees, and a non-45 degree vertical mirror 8 (also called a fourth mirror 8) is formed as shown in FIGS. It may be formed at an inclination angle ⁇ of 35 degrees with respect to the substrate.
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Abstract
Description
基板、この基板の長手方向にレーザー光を出射するレーザー光源を複数個並列に載置した半導体レーザー素子、
前記レーザー光源に対向して載置され、前記レーザー光源から出射されたレーザー光を前記基板の表面に直交する方向に反射するミラー、
前記ミラーに隣接して配置され、前記ミラーで反射されたレーザー光が進行する側に載置されたレンズ、
を備えたことを特徴とするものである。
実施の形態1に係る半導体レーザー装置100について、以下、図1~図7を用いて詳しく説明する。
実施の形態2に係る半導体レーザー装置101について、図8~図11を参照して以下詳しく説明する。
実施の形態3に係る半導体レーザー装置について、以下、図12~図16を参照して、以下順に説明する。
実施の形態4に係る半導体レーザー装置について、以下、図18A、図18B、図18Cを用いて説明する。ここで、図18Bは、図18Aの点線M1-M1についての断面図、図18Cは、図18Aの点線M2-M2についての断面図である。
従って、例示されていない無数の変形例が、本願明細書に開示される技術の範囲内において想定される。例えば、少なくとも1つの構成要素を変形する場合、追加する場合または省略する場合、さらには、少なくとも1つの構成要素を抽出し、他の実施の形態の構成要素と組み合わせる場合が含まれるものとする。具体的には、例えば、実施の形態1で説明した端面コートについては、実施の形態2-4についても、同様に適用可能である。
Claims (10)
- 基板、この基板の長手方向にレーザー光を出射するレーザー光源を複数個並列に載置した半導体レーザー素子、
前記レーザー光源に対向して載置され、前記レーザー光源から出射されたレーザー光を前記基板の表面に直交する方向に反射するミラー、
前記ミラーに隣接して配置され、前記ミラーで反射されたレーザー光が進行する側に載置されたレンズ、
を備えたことを特徴とする半導体レーザー装置。 - 前記レーザー光は、前記基板の長手方向の中心線に直交する方向に前記レーザー光源から出射されることを特徴とする請求項1に記載の半導体レーザー装置。
- 前記ミラーは、前記基板に対して45度の傾斜面を持つ四角錘台状、あるいは多角錘状であることを特徴とする請求項1または2に記載の半導体レーザー装置。
- 前記半導体レーザー素子から出射された複数のレーザー光を、前記基板の表面に沿った面の面内方向で、出射されたレーザー光と直交する方向に別々に反射する、前記ミラーとは別の第2のミラーを備えたことを特徴とする請求項1から3のいずれか1項に記載の半導体レーザー装置。
- 前記第2のミラーは、前記基板の表面から見て45度の角度を有する三角形を形成する柱状体であることを特徴とする請求項4に記載の半導体レーザー装置。
- 前記第2のミラーの表面にAlコーティング膜を備えたことを特徴とする請求項4または5に記載の半導体レーザー装置。
- 基板、この基板の長手方向にレーザー光を出射するレーザー光源を複数個並列に載置した半導体レーザー素子、
前記レーザー光源に対向して載置され、前記レーザー光源から出射されたレーザー光を、前記基板の表面に沿った面の面内方向であって出射されたレーザー光と非垂直の方向に反射する三角柱状の第3のミラー、
前記レーザー光源の端部に載置され、基板に対して45度以外の傾斜面を有する四角錘台状、あるいは多角錘状であって、前記第3のミラーで反射されたレーザー光を前記基板の表面に直交する方向に反射する第4のミラー、
前記第4のミラーに隣接して配置され、前記第4のミラーで反射されたレーザー光が進行する側に載置されたレンズ、
を備えたことを特徴とする半導体レーザー装置。 - 前記第3のミラーの表面にAlコーティング膜を備えたことを特徴とする請求項7に記載の半導体レーザー装置。
- 前記半導体レーザー素子の前記基板の裏面側にレンズを備えたことを特徴とする請求項1、4、または7のいずれか1項に記載の半導体レーザー装置。
- 請求項1または7に記載の半導体レーザー装置の製造方法であって、
サブマウントを有し、
前記半導体レーザー素子をジャンクションダウン方式で前記サブマウントにダイボンドして実装することを特徴とする半導体レーザー装置の製造方法。
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US18/264,888 US20240120704A1 (en) | 2021-06-14 | 2021-06-14 | Semiconductor laser device and method for manufacturing semiconductor laser device |
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