WO2022244276A1 - Détecteur de rayonnement - Google Patents

Détecteur de rayonnement Download PDF

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Publication number
WO2022244276A1
WO2022244276A1 PCT/JP2021/031353 JP2021031353W WO2022244276A1 WO 2022244276 A1 WO2022244276 A1 WO 2022244276A1 JP 2021031353 W JP2021031353 W JP 2021031353W WO 2022244276 A1 WO2022244276 A1 WO 2022244276A1
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Prior art keywords
region
circuit
control
charges
time
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PCT/JP2021/031353
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English (en)
Japanese (ja)
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靖史 吉田
浩志 鬼橋
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キヤノン電子管デバイス株式会社
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Publication of WO2022244276A1 publication Critical patent/WO2022244276A1/fr

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/17—Circuit arrangements not adapted to a particular type of detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H04N5/321—Transforming X-rays with video transmission of fluoroscopic images

Definitions

  • Embodiments of the present invention relate to radiation detectors.
  • An example of a radiation detector is an X-ray detector.
  • the X-ray detector reads image data, for example, as follows. First, an incident X-ray is recognized by a signal input from the outside. Alternatively, incident X-rays are recognized by an incident X-ray detection circuit or the like provided in the X-ray detector. Next, the thin film transistors are sequentially turned on for each of the plurality of detection units to read out the accumulated charges.
  • an X-ray image when constructing an X-ray image, the case of using charges read from all the detection units (hereinafter referred to as full-surface drive) and the case of using charges read from some of the detection units ( hereinafter referred to as partial drive).
  • full-surface drive the case of using charges read from all the detection units
  • partial drive the case of using charges read from some of the detection units
  • an X-ray image may be composed of charges read out from some of the detection units.
  • the time required for the refresh operation can be shortened by simultaneously reading charges from all the detection units corresponding to the invalid pixel regions as the refresh operation.
  • the charges may be induced to adjacent detectors corresponding to the effective pixel area. Induced charge alters the amount of charge that is read out, which can degrade the quality of the x-ray image.
  • a refresh operation can be performed to sequentially read charges from the detection units corresponding to the invalid pixel regions. By doing so, it is possible to suppress the induction of electric charges to the adjacent detection section. However, if charges are sequentially read from the detection units corresponding to the invalid pixel regions, the time required for the refresh operation cannot be shortened.
  • the refresh period of the detection section corresponding to the ineffective pixel area is made shorter than the readout period (scan period in the effective pixel area) of the detection section corresponding to the effective pixel area, charge is induced to the adjacent detection section. can be suppressed, and the time required for the refresh operation can be shortened.
  • An object of the present invention is to provide a radiation detector capable of suppressing a change in noise offset amount even if the refresh cycle of a detection unit corresponding to an invalid pixel region is shortened. .
  • a radiation detector includes: a plurality of control lines extending in a first direction; a plurality of data lines extending in a second direction orthogonal to the first direction; the plurality of control lines; a detection unit provided in each of a plurality of regions defined by a data line, having a thin film transistor, and converting radiation directly or in cooperation with a scintillator into an electric charge; and for each of the plurality of control lines, a readout circuit for switching between the ON state and the OFF state of the thin film transistor; a signal detection circuit for reading out the charge from each of the plurality of detection units via the plurality of data lines; A control circuit is provided for controlling the readout circuit and the signal detection circuit, divided into a first region and a second region from which the charges used for constructing a radiographic image are read out.
  • the first area and the second area are set for each control line.
  • a control circuit controls the readout circuit and the signal detection circuit so as to satisfy the following equation.
  • Tref Tscan/n
  • Tref is the time to drain the accumulated charge on one of the control lines in the first region.
  • Tscan is the time to read out the charges used for constructing the radiographic image in one of the control lines in the second area.
  • n is an integer.
  • FIG. 1 is a schematic perspective view for illustrating an X-ray detector;
  • FIG. 1 is a block diagram of an X-ray detector;
  • FIG. 3 is a circuit diagram of an array substrate;
  • the radiation detector according to this embodiment can be applied to various types of radiation such as ⁇ -rays in addition to X-rays.
  • ⁇ -rays which is representative of radiation
  • X-rays which is representative of radiation
  • An X-ray detector 1 exemplified below is an X-ray flat panel sensor that detects an X-ray image, which is a radiographic image.
  • Planar X-ray sensors are roughly classified into a direct conversion system and an indirect conversion system.
  • the direct conversion method is a method in which photoconductive charges (charges) generated inside the photoconductive film by incident X-rays are directly led to a storage capacitor for charge storage by a high electric field.
  • the indirect conversion method is a method in which X-rays are converted into fluorescence (visible light) by a scintillator, fluorescence is converted into charge by a photoelectric conversion element such as a photodiode, and the charge is guided to a storage capacitor.
  • an indirect conversion type X-ray detector 1 is illustrated as an example, but the present invention can also be applied to a direct conversion type X-ray detector. That is, the X-ray detector may have a detector that converts X-rays into electrical information. The detector can, for example, convert X-rays directly or in cooperation with a scintillator into electric charges. Since a known technique can be applied to the general configuration of the direct conversion type X-ray detector, detailed description thereof will be omitted. Also, the X-ray detector 1 can be used, for example, in general medical care, but the application is not limited.
  • FIG. 1 is a schematic perspective view for illustrating the X-ray detector 1.
  • FIG. 1 the bias line 2c3 and the like are omitted.
  • FIG. 2 is a block diagram of the X-ray detector 1.
  • FIG. 3 is a circuit diagram of the array substrate 2.
  • the X-ray detector 1 includes an array substrate 2, a scintillator 3, a circuit board 4, and a control circuit 5, for example.
  • the array substrate 2 converts fluorescence converted from X-rays by the scintillator 3 into charges.
  • the array substrate 2 includes, for example, a substrate 2a, a photoelectric conversion section 2b, a control line (or gate line) 2c1, a data line (or signal line) 2c2, a bias line 2c3, a wiring pad 2d1, a wiring pad 2d2, and a protective layer 2f. have.
  • the photoelectric conversion unit 2b serves as a detection unit that converts X-rays into charges in cooperation with the scintillator 3.
  • the substrate 2a has, for example, a plate shape and is made of glass such as alkali-free glass.
  • a plurality of photoelectric conversion units 2b can be provided on one surface side of the substrate 2a.
  • the photoelectric conversion unit 2b is provided, for example, in each of a plurality of regions defined by a plurality of control lines 2c1 and a plurality of data lines 2c2.
  • the plurality of photoelectric conversion units 2b can be arranged in a matrix. Note that one photoelectric conversion unit 2b corresponds to, for example, one pixel of an X-ray image.
  • Each of the plurality of photoelectric conversion units 2b is provided with, for example, a photoelectric conversion element 2b1 and a thin film transistor (TFT) 2b2, which is a switching element. Further, a storage capacitor 2b3 can be provided to store the charge converted by the photoelectric conversion element 2b1. A storage capacitor 2b3 is provided, for example, under each thin film transistor 2b2. However, depending on the capacity of the photoelectric conversion element 2b1, the photoelectric conversion element 2b1 can also serve as the storage capacitor 2b3.
  • TFT thin film transistor
  • Photoelectric conversion element 2b1 is, for example, a photodiode.
  • the thin film transistor 2b2 for example, performs switching between charge storage and discharge to the storage capacitor 2b3.
  • the thin film transistor 2b2 has a gate electrode 2b2a, a drain electrode 2b2b, and a source electrode 2b2c.
  • Gate electrode 2b2a of thin film transistor 2b2 is electrically connected to corresponding control line 2c1, for example.
  • Drain electrode 2b2b of thin film transistor 2b2 is electrically connected to corresponding data line 2c2, for example.
  • a source electrode 2b2c of the thin film transistor 2b2 is electrically connected to, for example, the corresponding photoelectric conversion element 2b1 and storage capacitor 2b3.
  • the anode side of photoelectric conversion element 2b1 and storage capacitor 2b3 are electrically connected to, for example, bias line 2c3.
  • a plurality of control lines 2c1 can be provided in parallel with each other at predetermined intervals.
  • the control line 2c1 extends, for example, in the row direction (corresponding to an example of the first direction).
  • One control line 2c1 is electrically connected to, for example, one of a plurality of wiring pads 2d1 provided near the periphery of the substrate 2a.
  • One wiring pad 2d1 is electrically connected to, for example, one of a plurality of wirings provided on the flexible printed circuit board 2e1.
  • the other ends of the plurality of wirings provided on the flexible printed circuit board 2e1 are electrically connected to readout circuits 41 provided on the circuit board 4, for example.
  • a plurality of data lines 2c2 can be provided parallel to each other at predetermined intervals.
  • the data line 2c2 extends, for example, in the column direction (corresponding to an example of the second direction) orthogonal to the row direction.
  • One data line 2c2 is electrically connected to, for example, one of a plurality of wiring pads 2d2 provided near the periphery of the substrate 2a.
  • One wiring pad 2d2 is electrically connected to, for example, one of a plurality of wirings provided on the flexible printed circuit board 2e2.
  • the other ends of the wirings provided on the flexible printed circuit board 2e2 are electrically connected to the signal detection circuits 42 provided on the circuit board 4, for example.
  • the bias line 2c3 is provided in parallel with the data line 2c2, for example, between the data lines 2c2 and 2c2.
  • the bias line 2c3 is electrically connected to, for example, a bias power supply.
  • the bias power supply is provided, for example, on the circuit board 4 or the like.
  • the bias line 2c3 is not necessarily required, and may be provided as required. If the bias line 2c3 is not provided, the anode side of the photoelectric conversion element 2b1 and the storage capacitor 2b3 are electrically connected to the ground instead of the bias line 2c3, for example.
  • Control line 2c1, data line 2c2, and bias line 2c3 are formed using, for example, a low resistance metal such as aluminum or chromium.
  • the protective layer 2f covers, for example, the photoelectric conversion section 2b, the control line 2c1, the data line 2c2, and the bias line 2c3.
  • Protective layer 2f includes, for example, at least one of an oxide insulating material, a nitride insulating material, an oxynitride insulating material, and a resin material.
  • the scintillator 3 is provided, for example, on a plurality of photoelectric conversion elements 2b1, and converts incident X-rays into fluorescence.
  • the scintillator 3 covers a region on the substrate 2a where the plurality of photoelectric conversion units 2b are provided.
  • the scintillator 3 is formed using, for example, cesium iodide (CsI): thallium (Tl) or sodium iodide (NaI): thallium (Tl).
  • CsI cesium iodide
  • NaI sodium iodide
  • Tl thallium
  • Tl thallium
  • the scintillator 3 can also be formed using, for example, gadolinium oxysulfide (Gd 2 O 2 S). In this case, it is possible to form matrix-shaped grooves so that a square prism-shaped scintillator 3 is provided for each of the plurality of photoelectric conversion units 2b.
  • the groove can be filled with the atmosphere (air) or an inert gas such as nitrogen gas for preventing oxidation. Alternatively, the groove may be in a vacuum state.
  • a reflecting layer (not shown) can be provided so as to cover the surface side of the scintillator 3 (X-ray incident surface side) in order to increase the utilization efficiency of fluorescence and improve sensitivity characteristics.
  • a moisture-proof body (not shown) covering the scintillator 3 and the reflective layer can be provided.
  • the circuit board 4 is provided, for example, on the side of the array substrate 2 opposite to the scintillator 3 side.
  • the circuit board 4 has a readout circuit 41 and a signal detection circuit 42, for example. Note that these circuits can be provided on one substrate, or can be provided separately on a plurality of substrates.
  • the readout circuit 41 switches between an ON state and an OFF state of the thin film transistors 2b2 provided in each of the plurality of photoelectric conversion units 2b. In this case, the readout circuit 41 switches between the ON state and the OFF state of the thin film transistor 2b2 for each of the plurality of control lines 2c1. For example, when receiving the control signal S1 from the control circuit 5, the readout circuit 41 turns on the plurality of thin film transistors 2b2.
  • the readout circuit 41 has, for example, a plurality of gate drivers 41a and row selection circuits 41b.
  • a control signal S1 is input from the control circuit 5 to the row selection circuit 41b.
  • the row selection circuit 41b inputs a signal to the corresponding gate driver 41a according to the scanning direction of the X-ray image.
  • the gate driver 41a inputs a signal to turn on the thin film transistor 2b2 to the corresponding control line 2c1.
  • the readout circuit 41 sequentially inputs signals to each control line 2c1 via the flexible printed circuit board 2e1.
  • a signal input to the control line 2c1 turns on the thin-film transistor 2b2, so that charges can be read from the photoelectric conversion section 2b (storage capacitor 2b3).
  • the signal detection circuit 42 reads charges from each of the plurality of photoelectric conversion units 2b via the plurality of data lines 2c2, and converts the read charges into an image data signal S2.
  • the signal detection circuit 42 has, for example, a plurality of integration amplifiers 42a, a plurality of multiplexer circuits 42b, and a plurality of AD converters 42c.
  • one integrating amplifier 42a is electrically connected to one data line 2c2. Charges (currents) read from the photoelectric conversion unit 2b are sequentially input to the integrating amplifier 42a.
  • the integration amplifier 42a integrates the current flowing within a certain period of time and outputs a voltage corresponding to the integrated value to the multiplexer circuit 42b. By doing so, it becomes possible to convert the value of the current (charge amount) flowing through the data line 2c2 into a voltage value within a predetermined time. That is, the integrating amplifier 42a converts image data information corresponding to the intensity distribution of fluorescence generated in the scintillator 3 into potential information.
  • the multiplexer circuit 42b selects the integrating amplifier 42a for reading, and sequentially reads the image data signal S2 converted into potential information.
  • the AD converter 42c sequentially converts the read image data signal S2 into a digital signal.
  • the image data signal S2 converted into a digital signal is input to the control circuit 5 via the wiring 5a.
  • the image data signal S2 converted into a digital signal may be transmitted to the control circuit 5 wirelessly.
  • the control circuit 5 can be, for example, a computer having an arithmetic unit such as a CPU (Central Processing Unit) and a storage unit. Note that the circuit board 4 described above can be integrated with the control circuit 5 .
  • the storage unit can store a control program for controlling the operation of the X-ray detector 1 and configuring an X-ray image.
  • the control circuit 5 constructs an X-ray image from the image data signal S2 converted into a digital signal, for example, according to the control program stored in the storage unit.
  • control circuit 5 controls the operations of, for example, the readout circuit 41 and the signal detection circuit 42 described above, according to a control program stored in the storage unit.
  • the charges read out from the plurality of detection units 2b corresponding to the effective pixel area of the X-ray image (the pixel area where the site of interest is imaged) are can be used to construct an X-ray image.
  • the site of interest is often near the center of the X-image rather than the edge of the X-image.
  • FIG. 2 using charges read from a plurality of detection units 2b provided in a central region 20 (corresponding to an example of the second region) of the array substrate 2, An x-ray image of the site can be constructed.
  • the position and size of the region 20 can be changed according to the position and number of the target control lines 2c1.
  • the position and number of target control lines 2c1 can be changed by inputting data to the control circuit 5, for example.
  • a region 21 corresponds to an invalid pixel region (unnecessary pixel region) of the X-ray image.
  • the region 21 may be provided on one side of the region 20.
  • the charge read from the region 21 since the charge read from the region 21 is discarded, it may be considered unnecessary to read the charge from the region 21 . However, if charges are not read out from the region 21 , the charges remain accumulated in the plurality of detection units 2 b provided in the region 21 . In addition, since X-rays that do not pass through the subject are incident on the region 21, the amount of charge accumulated in the plurality of detection units 2b provided in the region 21 tends to increase.
  • the accumulated charge amount is difference occurs.
  • a boundary line (artifact) is generated in the X-ray image due to the difference in the amount of accumulated charges. The quality of the X-ray image is degraded.
  • a refresh operation is performed to read charges from the region 21 .
  • the electric charges may be induced to the adjacent detection section 2 b provided in the region 20 .
  • the amount of electric charge read out changes, so that boundary lines (artifacts) occur in the X-ray image, and the quality of the X-ray image deteriorates.
  • the X-ray detector 1 is provided with the circuit board 4 and the control circuit 5 .
  • the circuit board 4 and the control circuit 5 are provided with, for example, a multiplexer circuit 42b, an AD converter 42c, a power source element (DC-DC converter), and the like.
  • a multiplexer circuit 42b When such a device is driven, electromagnetic waves having a specific frequency are radiated from the device.
  • the radiated electromagnetic waves enter the array substrate 2 directly or indirectly. Since the frequency of the electromagnetic wave emitted from the element is higher than the frequency (scan frequency) for reading charges from the plurality of detectors 2b, aliasing noise occurs in the X-ray image.
  • the intensity of electromagnetic waves radiated from the element varies with time, and the intensity of aliasing noise varies depending on the readout period of charges from the plurality of detection units 2b.
  • the elements there are some elements whose drive period is an integral multiple of the charge readout period (scan period) from the plurality of detection units 2b.
  • the noise component generated during the readout in one control line 2c1 does not change. That is, when the drive period of the element is an integer multiple of the charge readout period, the phase of the folding noise period does not shift with respect to the phase of the charge readout period. Therefore, even if charges are sequentially read out from all the detection units 2b, the aliasing noise component in the X-ray image does not change. If the aliasing noise component in the X-ray image does not change, the aliasing noise can be removed by noise correction (offset correction) based on comparison with the dark image.
  • the refresh cycle for sequentially reading charges from the region 21 is the same as the cycle for sequentially reading charges from the region 20, it is possible to eliminate aliasing noise by offset correction. However, if this is done, as described above, the time required for the refresh operation cannot be shortened.
  • the aliasing noise component (the offset amount of the aliasing noise) changes for each control line 2c1 and thus for each constructed X-ray image. If the aliasing noise component changes for each constructed X-ray image, it becomes difficult to remove the aliasing noise by offset correction.
  • the control circuit 5 sequentially performs the refresh operation in the region 21 and the charge readout operation in the region 20, which will be exemplified below.
  • the regions 21 are provided on both sides of the region 20 in FIG. Therefore, for example, a refresh operation in one region 21 and a refresh operation in the other region 21 are performed, and then a charge readout operation in the region 20 is performed.
  • FIG. 4 is a timing chart for illustrating the refresh operation in area 21. As shown in FIG. "Ireset" in FIG. 4 represents the reset operation of the integrating amplifier 42a.
  • the regions 21 are provided on both sides of the region 20, the total number of control lines 2c1 provided in the two regions 21 is m.
  • Grm represents the timing of applying the control signal S1 on the m-th control line 2c1.
  • Gr1 represents the timing of applying the control signal S1 on the first control line 2c1.
  • Tref represents the refresh time.
  • T ON represents the ON time of the thin film transistor 2b2, and “T OFF ” represents the OFF time of the thin film transistor 2b2.
  • Tscan represents the charge readout time (the charge readout time in the region 20) in FIG.
  • FIG. 5 is a timing chart for illustrating the charge readout operation in the region 20.
  • L is the total number of control lines 2c1 provided in the area 20.
  • G SL represents the timing of applying the control signal S1 on the L-th control line 2c1.
  • G S1 represents the timing of applying the control signal S1 on the first control line 2c1.
  • T ON represents the ON time of the thin film transistor 2 b 2
  • T scan represents the charge reading time in the region 20 .
  • one X-ray image is constructed by performing refresh operations in the two regions 21 and then performing charge readout in the region 20 . Further, as shown in FIG. 5, by repeatedly performing the refresh operation and the charge readout operation, it is possible to construct a plurality of X-ray images or to construct a moving image.
  • control circuit 5 divides the area 21 from which the accumulated charges are discharged and the area 20 from which the charges used for constructing the X-ray image are read out into the readout circuit 41 and the signal detection. circuit 42 and .
  • the control circuit 5 can set the area 21 and the area 20 in units of control lines 2c1.
  • an off-time TOFF of the thin-film transistor 2b2 is provided after the on-time TON of the thin-film transistor 2b2 in the refresh time Tref, the electric charge is transferred from one detecting section 2b to the other detecting section 2b. can be suppressed from being induced. Therefore, the quality of X-ray images can be improved.
  • the on-time T ON of the thin film transistor 2b2 may be provided after the off-time T OFF of the thin film transistor 2b2.
  • the time (refresh time Tref) for discharging the accumulated charge in one control line 2c1 includes the time (on time T ON ) for turning on the thin film transistor 2b2 and the time (on time T ON ) for turning off the thin film transistor 2b2. off time T OFF ).
  • the noise offset amount changes. can be suppressed. Therefore, noise can be easily removed by offset correction.

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Abstract

Un détecteur de rayonnement selon un mode de réalisation de la présente invention comprend : une pluralité de lignes de commande qui s'étendent dans une première direction ; une pluralité de lignes de données qui s'étendent dans une seconde direction qui est perpendiculaire à la première direction ; des unités de détection qui sont respectivement disposées dans une pluralité de régions qui sont segmentées par la pluralité de lignes de commande et la pluralité de lignes de données, qui comportent chacune un transistor en couche mince, et qui convertissent chacune, directement ou conjointement avec un scintillateur, un rayon radial en une charge électrique ; un circuit de lecture qui commute entre un état actif et un état inactif du transistor en couche mince pour chaque ligne de la pluralité de lignes de commande ; un circuit de détection de signal qui lit les charges électriques de la pluralité d'unités de détection par le biais de la pluralité de lignes de données ; et un circuit de commande qui commande le circuit de lecture et le circuit de détection de signal pour chaque région parmi une première région dans laquelle les charges électriques accumulées sont déchargées et une seconde région dans laquelle les charges électriques à utiliser pour constituer une image radiographique sont lues. La première région et la seconde région sont définies pour chaque ligne de commande. Le circuit de commande commande le circuit de lecture et le circuit de détection de signal de manière à ce que la formule suivante soit satisfaite.　Tref = Tscan/n Tref représente le temps nécessaire pour décharger, dans la première région, la charge électrique accumulée sur l'une des lignes de commande.　Tscan représente le temps de lecture, dans la seconde région, de la charge électrique à utiliser pour constituer l'image radiographique sur l'une des lignes de commande. N est un nombre entier.
PCT/JP2021/031353 2021-05-19 2021-08-26 Détecteur de rayonnement WO2022244276A1 (fr)

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JP2021-084473 2021-05-19
JP2021084473A JP2022177996A (ja) 2021-05-19 2021-05-19 放射線検出器

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Citations (3)

* Cited by examiner, † Cited by third party
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JP2007144064A (ja) * 2005-11-30 2007-06-14 Shimadzu Corp 撮像センサおよびそれを用いた撮像装置
JP2013096730A (ja) * 2011-10-28 2013-05-20 Fujifilm Corp 放射線撮影装置
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