WO2022209118A1 - 半導体加工用粘着テープおよび半導体装置の製造方法 - Google Patents
半導体加工用粘着テープおよび半導体装置の製造方法 Download PDFInfo
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- WO2022209118A1 WO2022209118A1 PCT/JP2022/000567 JP2022000567W WO2022209118A1 WO 2022209118 A1 WO2022209118 A1 WO 2022209118A1 JP 2022000567 W JP2022000567 W JP 2022000567W WO 2022209118 A1 WO2022209118 A1 WO 2022209118A1
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- Prior art keywords
- buffer layer
- adhesive tape
- meth
- semiconductor wafer
- semiconductor
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- 229920001643 poly(ether ketone) Polymers 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Definitions
- the present invention relates to an adhesive tape for semiconductor processing, and more particularly, a method of forming grooves on the surface of a wafer, or forming a modified region inside the wafer with a laser, and singulating the wafer by stress or the like during grinding of the backside of the wafer.
- the present invention relates to an adhesive tape preferably used for temporarily holding a semiconductor wafer or chip when manufacturing a semiconductor device using , and a method of manufacturing a semiconductor device using the adhesive tape.
- DBG Dicing Before Grinding
- LDBG Laser Dicing Before Grinding
- a semiconductor processing called a backgrind sheet is placed on the wafer surface to protect the circuits on the wafer surface and to hold the semiconductor wafer and semiconductor chips. It is common to attach an adhesive tape for After grinding the back surface, an adhesive tape having an adhesive layer is attached to the ground surface, or a protective film forming tape is used to form a protective film. After that, the adhesive tape for semiconductor processing attached to the surface of the wafer is peeled off after its adhesive strength is reduced by irradiation with energy rays such as ultraviolet rays. Through such steps, an adhesive layer and a protective film forming layer are formed on the back surface of the chip.
- a laminated adhesive tape that includes a base material, an adhesive layer, and a buffer layer is sometimes used as an adhesive tape for semiconductor processing.
- An adhesive tape for semiconductor processing is described, for example, in Patent Document 1 (Japanese Unexamined Patent Application Publication No. 2015-183008).
- the buffer layer is provided in order to absorb vibrations generated during grinding of the back surface of the wafer, to reduce irregularities caused by foreign matter, and to stably hold the wafer flat.
- the adhesive tape for semiconductor processing is temporarily attached to the circuit surface of the wafer, and the wafer is ground while being sprayed with water. After that, a dry polishing process may be performed as a finishing process. It was found that in this dry polishing process, the chips often come into contact with each other, resulting in chipping.
- the temperature of the divided chips does not rise excessively.
- the temperature of the tip rises due to frictional heat.
- the heat of the chip reaches the adhesive tape for semiconductor processing, and heats the buffer layer of the tape to about 60° C. to soften the buffer layer.
- the softened buffer layer has reduced holding power and shape retention power, and the shearing force of the dry polishing process acts on it, causing the adhesive tape for semiconductor processing to slip or deform.
- the split chips are misaligned and come into contact with each other, resulting in chipping in which the ends of the chips are damaged.
- the chip spacing (kerf width) is relatively wide, contact between chips does not occur frequently, but in the LDBG method, the kerf width is substantially zero, so even a slight positional deviation causes the chips to contact each other, causing chipping. occur frequently. In particular, chipping is likely to occur in ultra-thin chips whose bending strength has decreased due to progress in thinning.
- an object of the present invention is to suppress the occurrence of chipping during the manufacture of chips using an adhesive tape for semiconductor processing having a buffer layer.
- the gist of the present invention for the purpose of solving such problems is as follows.
- a pressure-sensitive adhesive tape having a base material, a buffer layer provided on one side of the base material, and an adhesive layer provided on the other side of the base material,
- a compressive load reaches 2 mN when the tip of a triangular pyramidal indenter with a tip curvature radius of 100 nm and an inter-edge angle of 115° is pushed into the buffer layer heated to 60° C. at a rate of 10 ⁇ m/min.
- a pressure-sensitive adhesive tape for semiconductor processing which has an indentation depth (Z) of 3.0 ⁇ m or less.
- the semiconductor wafer In the step of grinding the back surface of a semiconductor wafer in which grooves are formed in the surface of the semiconductor wafer or in which a modified region is formed in the semiconductor wafer, and singulating the semiconductor wafer into semiconductor chips by the grinding, the semiconductor wafer
- the semiconductor wafer having the adhesive tape attached to the front surface and having the groove or the modified region formed therein is ground from the back side, and separated into a plurality of chips starting from the groove or the modified region.
- a method of manufacturing a semiconductor device comprising:
- Form semiconductor processing means that it can be used in each process such as transportation of semiconductor wafers, back grinding, dicing, and pickup of semiconductor chips.
- the "front surface” of a semiconductor wafer refers to the surface on which circuits are formed, and the “back surface” refers to the surface on which no circuits are formed. Separation of a semiconductor wafer means dividing the semiconductor wafer into individual circuits to obtain semiconductor chips.
- DBG refers to a method in which a groove of a predetermined depth is formed on the front side of the wafer, then the wafer is ground from the back side, and the wafer is singulated by grinding.
- the grooves formed on the surface side of the wafer are formed by a method such as blade dicing, laser dicing or plasma dicing.
- LDBG is a modification of DBG, and refers to a method in which a laser is used to provide a modified region inside the wafer, and the wafer is singulated by stress or the like during grinding of the back surface of the wafer.
- Dry polishing refers to a process of mirror-finishing the rear surface of the individualized chips with a dry grindstone. Through this process, the crushed layer on the back surface of the chip is reduced and the bending strength is increased.
- the adhesive tape for semiconductor processing according to the present invention may be simply referred to as "adhesive tape".
- the adhesive tape 10 means a laminate including a base material 11 and an adhesive layer 12. As shown in FIG.
- the adhesive tape 10 has a buffer layer 13 on the surface of the substrate 11 opposite to the adhesive layer 12 .
- a primer layer may be formed on the surface of the substrate on the pressure-sensitive adhesive layer side, and a release sheet may be laminated on the surface of the pressure-sensitive adhesive layer to protect the pressure-sensitive adhesive layer until use.
- the base material may be a single layer or may be a multilayer. The same applies to the adhesive layer and the buffer layer. The configuration of each member of the adhesive tape for semiconductor processing according to this embodiment will be described in more detail below.
- the Young's modulus of the base material 11 at 23° C. is preferably 1000 MPa or more. If a base material with a Young's modulus of less than 1000 MPa is used, the holding performance of the adhesive tape on the semiconductor wafer or semiconductor chip is reduced, and vibrations, etc. during back grinding cannot be suppressed, resulting in chipping or breakage of the semiconductor chip. easier.
- the Young's modulus of the base material is more preferably 1800 to 30000 MPa, still more preferably 2500 to 6000 MPa.
- the thickness of the substrate is not particularly limited, it is preferably 110 ⁇ m or less, more preferably 15 to 110 ⁇ m, even more preferably 20 to 105 ⁇ m.
- the thickness of the base material is preferably 110 ⁇ m or less, more preferably 15 to 110 ⁇ m, even more preferably 20 to 105 ⁇ m.
- the material of the substrate is not particularly limited as long as it satisfies the above physical properties, and various resin films can be used.
- a base material having a Young's modulus of 1000 MPa or more at 23° C. for example, polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyesters such as wholly aromatic polyesters, polyimides, polyamides, polycarbonates, polyacetals, modified polyphenylene oxides, and polyphenylene sulfides. , polysulfone, polyetherketone, and biaxially oriented polypropylene.
- a film containing one or more selected from a polyester film, a polyamide film, a polyimide film, and a biaxially stretched polypropylene film is preferable, more preferably a polyester film, and further preferably a polyethylene terephthalate film.
- the substrate may contain plasticizers, lubricants, infrared absorbers, ultraviolet absorbers, fillers, colorants, antistatic agents, antioxidants, catalysts, etc., as long as they do not impair the effects of the present invention. good.
- the substrate may be transparent or opaque, and may be colored or vapor-deposited as desired.
- the base material may be subjected to adhesion treatment such as corona treatment in order to improve adhesion with at least one of the buffer layer and the adhesive layer.
- the substrate may have the resin film described above and a primer layer coated on at least one surface of the resin film.
- the primer layer-forming composition for forming the primer layer is not particularly limited, but examples thereof include compositions containing polyester-based resins, urethane-based resins, polyester-urethane-based resins, acrylic-based resins, and the like.
- the primer layer-forming composition may optionally contain a cross-linking agent, a photopolymerization initiator, an antioxidant, a softening agent (plasticizer), a filler, an antirust agent, a pigment, a dye, and the like. .
- the thickness of the primer layer is preferably 0.01-10 ⁇ m, more preferably 0.03-5 ⁇ m.
- the thickness of the primer layer in the examples of the present application is smaller than the thickness of the base material, the thickness of the resin film having the primer layer and the thickness of the base material are substantially the same.
- the material of the primer layer is soft, it has little effect on the Young's modulus, and the Young's modulus of the substrate is substantially the same as that of the resin film even when the primer layer is provided.
- the Young's modulus of the base material can be controlled by selecting the resin composition, adding a plasticizer, and stretching conditions during resin film production. Specifically, when a polyethylene terephthalate film is used as the substrate, the Young's modulus of the substrate tends to decrease as the content of the ethylene component in the copolymer component increases. Moreover, when the amount of the plasticizer blended with respect to the resin composition constituting the base material is increased, the Young's modulus of the base material tends to decrease.
- the pressure-sensitive adhesive layer 12 is not particularly limited as long as it has appropriate pressure-sensitive adhesiveness at room temperature, but preferably has a shear storage modulus of 0.05 to 0.50 MPa at 23°C. Circuits and the like are formed on the surface of a semiconductor wafer, and the surface is usually uneven. By setting the shear storage elastic modulus of the adhesive layer within the above range, when the adhesive tape is applied to the wafer surface having unevenness, the unevenness of the wafer surface and the adhesive layer are sufficiently contacted, and the adhesive layer is smoothed. Adhesiveness can be exhibited appropriately. Therefore, it is possible to reliably fix the adhesive tape to the semiconductor wafer and to appropriately protect the wafer surface during back grinding.
- the shear storage modulus of the adhesive layer is more preferably 0.12 to 0.35 MPa.
- the shear storage elastic modulus of the adhesive layer means the shear storage elastic modulus before curing by energy ray irradiation when the adhesive layer is formed from an energy ray-curable adhesive.
- the shear storage modulus can be measured by the following method.
- a measurement sample is obtained by punching a pressure-sensitive adhesive layer having a thickness of about 0.5 to 1 mm into a circle having a diameter of 7.9 mm.
- the elastic modulus of the measurement sample is measured when the temperature is changed at a temperature increase rate of 3 ° C./min in the temperature range of -30 ° C. to 150 ° C. at a frequency of 1 Hz. .
- the elastic modulus at the measurement temperature of 23°C is taken as the shear storage elastic modulus at 23°C.
- the thickness of the pressure-sensitive adhesive layer is preferably less than 100 ⁇ m, more preferably 5-80 ⁇ m, even more preferably 10-70 ⁇ m.
- the adhesive layer is formed of, for example, an acrylic adhesive, a urethane adhesive, a rubber adhesive, a silicone adhesive, or the like, with the acrylic adhesive being preferred.
- the adhesive layer is preferably formed from an energy ray-curable adhesive.
- an energy ray-curable adhesive for forming the adhesive layer for example, in addition to a non-energy ray-curable adhesive resin (also referred to as “adhesive resin I”), an energy ray-curable compound other than the adhesive resin can be used.
- An energy ray-curable pressure-sensitive adhesive composition (hereinafter also referred to as “X-type pressure-sensitive adhesive composition”) can be used.
- an energy ray-curable adhesive resin hereinafter also referred to as “adhesive resin II" obtained by introducing an unsaturated group into the side chain of a non-energy ray-curable adhesive resin is used.
- a pressure-sensitive adhesive composition (hereinafter, also referred to as "Y-type pressure-sensitive adhesive composition”) containing as a main component and not containing an energy ray-curable compound other than the pressure-sensitive adhesive resin may also be used.
- an energy ray-curable adhesive a combined type of X-type and Y-type, that is, in addition to the energy ray-curable adhesive resin II, an energy ray-curable adhesive containing an energy ray-curable compound other than the adhesive resin is used.
- An adhesive composition hereinafter also referred to as "XY type adhesive composition" may be used.
- the XY-type adhesive composition it is preferable to use the XY-type adhesive composition.
- the XY type it is possible to have sufficient adhesive properties before curing, while sufficiently reducing the peel strength to the semiconductor wafer after curing.
- the adhesive may be formed from a non-energy ray-curable adhesive composition that does not cure even when irradiated with energy rays.
- the non-energy ray-curable adhesive composition contains at least the non-energy ray-curable adhesive resin I, but does not contain the energy ray-curable adhesive resin II and the energy ray-curable compound. be.
- adhesive resin is used as a term indicating one or both of the above-described adhesive resin I and adhesive resin II.
- specific adhesive resins include acrylic resins, urethane resins, rubber resins, and silicone resins, with acrylic resins being preferred.
- the acrylic pressure-sensitive adhesive in which an acrylic resin is used as the pressure-sensitive adhesive resin will be described in more detail below.
- Acrylic polymer is used for acrylic resin.
- the acrylic polymer is obtained by polymerizing a monomer containing at least an alkyl (meth)acrylate, and contains structural units derived from the alkyl (meth)acrylate.
- Alkyl (meth)acrylates include those having 1 to 20 carbon atoms in the alkyl group, and the alkyl group may be linear or branched.
- alkyl (meth)acrylates include methyl (meth)acrylate, ethyl (meth)acrylate, isopropyl (meth)acrylate, n-propyl (meth)acrylate, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, ) acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate and the like. You may use an alkyl (meth)acrylate individually or in combination of 2 or more types.
- the acrylic polymer preferably contains a structural unit derived from an alkyl (meth)acrylate whose alkyl group has 4 or more carbon atoms.
- the number of carbon atoms in the alkyl (meth)acrylate is preferably 4-12, more preferably 4-6.
- the alkyl (meth)acrylate having an alkyl group having 4 or more carbon atoms is preferably an alkyl acrylate.
- an alkyl group having a carbon number of 4 or more is added in order to adjust the elastic modulus and adhesive properties of the pressure-sensitive adhesive layer.
- a copolymer containing 1 to 3 alkyl (meth)acrylate-derived structural units is preferred.
- the alkyl (meth)acrylate is preferably an alkyl (meth)acrylate having 1 or 2 carbon atoms, more preferably methyl (meth)acrylate, and most preferably methyl methacrylate.
- the content of the alkyl (meth)acrylate having 1 to 3 carbon atoms in the alkyl group is preferably 1 to 30 parts by mass, more preferably 3 to 26 parts by mass, with respect to 100 parts by mass of the total amount of the monomer. parts by mass, more preferably 6 to 22 parts by mass.
- the acrylic polymer preferably has structural units derived from a functional group-containing monomer in addition to the structural units derived from the alkyl (meth)acrylate described above.
- the functional group of the functional group-containing monomer includes a hydroxyl group, a carboxyl group, an amino group, an epoxy group and the like.
- the functional group-containing monomer reacts with a cross-linking agent described later to become a cross-linking starting point, or reacts with an unsaturated group-containing compound to introduce an unsaturated group into the side chain of the acrylic polymer. be.
- Functional group-containing monomers include hydroxyl group-containing monomers, carboxy group-containing monomers, amino group-containing monomers, epoxy group-containing monomers, and the like.
- a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, an epoxy group-containing monomer, and the like may be used alone or in combination of two or more.
- hydroxyl group-containing monomers and carboxy group-containing monomers are preferably used, and hydroxyl group-containing monomers are more preferably used.
- hydroxyl group-containing monomers examples include 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3- Hydroxyalkyl (meth)acrylates such as hydroxybutyl (meth)acrylate and 4-hydroxybutyl (meth)acrylate; unsaturated alcohols such as vinyl alcohol and allyl alcohol;
- Carboxy group-containing monomers include, for example, ethylenically unsaturated monocarboxylic acids such as (meth)acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid and citraconic acid, and their anhydrides , 2-carboxyethyl methacrylate and the like.
- monocarboxylic acids such as (meth)acrylic acid and crotonic acid
- dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid and citraconic acid, and their anhydrides
- 2-carboxyethyl methacrylate and the like include, for example, ethylenically unsaturated monocarboxylic acids such as (meth)acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid and citraconic
- the content of the functional group-containing monomer is preferably 1 to 35 parts by mass, more preferably 3 to 32 parts by mass, and still more preferably 6 to 30 parts by mass with respect to 100 parts by mass of the total amount of monomers constituting the acrylic polymer.
- the acrylic polymer may contain structural units derived from monomers copolymerizable with the above acrylic monomers, such as styrene, ⁇ -methylstyrene, vinyl toluene, vinyl formate, vinyl acetate, acrylonitrile, and acrylamide. may contain.
- the above acrylic polymer can be used as a non-energy ray-curable adhesive resin I (acrylic resin).
- the energy ray-curable acrylic resin include those obtained by reacting the functional group of the acrylic polymer I with a compound having a photopolymerizable unsaturated group (also referred to as an unsaturated group-containing compound). .
- the unsaturated group-containing compound is a compound that has both a substituent that can be bonded to the functional group of the acrylic polymer and a photopolymerizable unsaturated group.
- the photopolymerizable unsaturated group includes a (meth)acryloyl group, a vinyl group, an allyl group, a vinylbenzyl group, etc., and a (meth)acryloyl group is preferred.
- an isocyanate group, a glycidyl group, etc. are mentioned as a functional group and a bondable substituent which the unsaturated group containing compound has.
- examples of unsaturated group-containing compounds include (meth)acryloyloxyethyl isocyanate, (meth)acryloylisocyanate, glycidyl (meth)acrylate, and the like.
- the unsaturated group-containing compound preferably reacts with a part of the functional groups of the acrylic polymer.
- 50 to 98 mol% of the functional groups of the acrylic polymer include It is preferable to react the contained compounds, more preferably 55 to 93 mol %.
- the weight average molecular weight (Mw) of the acrylic resin is preferably 300,000 to 1,600,000, more preferably 400,000 to 1,400,000, and still more preferably 500,000 to 1,200,000.
- Energy ray-curable compound contained in the X-type or XY-type pressure-sensitive adhesive composition, a monomer or oligomer having an unsaturated group in the molecule and capable of being polymerized and cured by energy ray irradiation is preferable.
- energy ray-curable compounds include trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4- Polyvalent (meth)acrylate monomers such as butylene glycol di(meth)acrylate, 1,6-hexanediol (meth)acrylate, urethane (meth)acrylate, polyester (meth)acrylate, polyether (meth)acrylate, epoxy ( Oligomers such as meth)acrylates can be mentioned.
- urethane (meth)acrylate oligomers are preferable because they have a relatively high molecular weight and are less likely to reduce the shear storage modulus of the pressure-sensitive adhesive layer.
- the energy ray-curable compound has a molecular weight (weight average molecular weight in the case of an oligomer) of preferably 100 to 12,000, more preferably 200 to 10,000, still more preferably 400 to 8,000, and particularly preferably 600 to 6,000.
- the content of the energy ray-curable compound in the X-type adhesive composition is preferably 40 to 200 parts by mass, more preferably 50 to 150 parts by mass, and still more preferably 60 to 100 parts by mass with respect to 100 parts by mass of the adhesive resin. 90 parts by mass.
- the content of the energy ray-curable compound in the XY-type adhesive composition is preferably 1 to 30 parts by mass, more preferably 2 to 20 parts by mass, and even more preferably 100 parts by mass of the adhesive resin. is 3 to 15 parts by mass.
- the adhesive resin is energy ray-curable, even if the content of the energy ray-curable compound is small, it is possible to sufficiently reduce the peel strength after energy ray irradiation. is.
- the pressure-sensitive adhesive composition preferably further contains a cross-linking agent.
- the cross-linking agent reacts with, for example, a functional group derived from a functional group-containing monomer possessed by the adhesive resin to cross-link the adhesive resins.
- cross-linking agents examples include isocyanate-based cross-linking agents such as tolylene diisocyanate, hexamethylene diisocyanate, and adducts thereof; epoxy-based cross-linking agents such as ethylene glycol glycidyl ether; hexa[1-(2-methyl)-aziridinyl ] aziridine-based cross-linking agents such as triphosphatriazine; chelate-based cross-linking agents such as aluminum chelate; These cross-linking agents may be used alone or in combination of two or more.
- isocyanate-based cross-linking agents are preferable from the viewpoint of increasing cohesive strength and improving adhesive strength, and from the viewpoint of availability.
- the amount of the cross-linking agent is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 7 parts by mass, and still more preferably 0 parts by mass with respect to 100 parts by mass of the adhesive resin. 0.05 to 4 parts by mass.
- the pressure-sensitive adhesive composition when the pressure-sensitive adhesive composition is energy ray-curable, the pressure-sensitive adhesive composition preferably further contains a photopolymerization initiator.
- a photopolymerization initiator By including a photopolymerization initiator, the curing reaction of the pressure-sensitive adhesive composition can sufficiently proceed even with relatively low-energy energy rays such as ultraviolet rays.
- photopolymerization initiators examples include benzoin compounds, acetophenone compounds, acylphosphine oxide compounds, titanocene compounds, thioxanthone compounds, peroxide compounds, and photosensitizers such as amines and quinones.
- photopolymerization initiators may be used alone or in combination of two or more.
- the amount of the photopolymerization initiator is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 5 parts by mass, and still more preferably 0.05 to 5 parts by mass with respect to 100 parts by mass of the adhesive resin. is.
- the pressure-sensitive adhesive composition may contain other additives as long as the effects of the present invention are not impaired.
- Other additives include, for example, antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, pigments, dyes, and the like.
- the blending amount of the additives is preferably 0.01 to 6 parts by mass with respect to 100 parts by mass of the adhesive resin.
- the adhesive composition may be further diluted with an organic solvent to form a solution of the adhesive composition, from the viewpoint of improving the applicability to the base material, the buffer layer, and the release sheet.
- organic solvents include methyl ethyl ketone, acetone, ethyl acetate, tetrahydrofuran, dioxane, cyclohexane, n-hexane, toluene, xylene, n-propanol and isopropanol.
- the organic solvents used during the synthesis of the adhesive resin may be used as they are. may be added with one or more organic solvents.
- the adhesive tape 10 has a buffer layer 13 .
- An adhesive layer 12 is provided on one surface of the substrate 11 and a buffer layer 13 is provided on the other surface of the substrate 11 .
- the buffer layer relieves the stress during grinding of the back surface of the semiconductor wafer and prevents the semiconductor wafer from cracking and chipping.
- An adhesive tape is attached to a semiconductor wafer, and after the adhesive tape is cut along the outer periphery of the semiconductor wafer, the semiconductor wafer is placed on a chuck table via the adhesive tape and the back surface is ground, but the adhesive tape serves as a buffering layer. Having the layer helps the semiconductor wafer to be properly held on the chuck table. Also, even if there is foreign matter on the chuck table, the unevenness of the foreign matter can be absorbed by the deformation of the buffer layer, so that the wafer can be ground to a smooth and uniform thickness.
- the pressure-sensitive adhesive tape of this embodiment is characterized in that deformation of the buffer layer at high temperatures is suppressed. Specifically, the compressive load when the tip of a triangular pyramid-shaped indenter with a tip curvature radius of 100 nm and an edge-to-edge angle of 115° is pushed into the buffer layer heated to 60 ° C. at a speed of 10 ⁇ m / min.
- the indentation depth (Z) required to reach 2 mN is 3.0 ⁇ m or less.
- the indentation depth (Z) is preferably 2.8 ⁇ m or less, more preferably 2.6 ⁇ m or less.
- the lower limit of the pushing depth (Z) is not particularly limited.
- the depth (Z) is preferably 0.01 ⁇ m or more, more preferably 0.1 ⁇ m or more.
- the buffer layer is a layer formed by curing a buffer layer-forming composition, which will be described later, it is relatively easy to adjust the viscoelasticity by selecting the composition of the buffer layer-forming composition.
- the buffer layer adjusted so that the indentation depth (Z) is 3.0 ⁇ m or less the deformation of the buffer layer at high temperatures is suppressed, so that the pressure-sensitive adhesive tape 10 is not easily deformed during the dry polishing process. There is no deformation and chipping can be reduced.
- an adhesive tape having a buffer layer with an indentation depth (Z) exceeding 3.0 ⁇ m the adhesive tape is likely to be deformed in the dry polishing process, and chipping is likely to occur due to contact between the ends of the chips.
- the indentation depth (Z) means a value measured by the method described in Examples.
- the indentation depth (Z) is within the above range by appropriately changing the type and content of the components contained in the buffer layer forming composition that forms the buffer layer, the degree of hardening of the buffer layer, etc. It is possible to adjust the
- the buffer layer is a soft layer compared to the base material. Therefore, the Young's modulus of the buffer layer at 23°C is less than the Young's modulus of the substrate at 23°C. Specifically, the Young's modulus of the buffer layer at 23° C. is preferably less than 1000 MPa, more preferably 700 MPa or less, still more preferably 500 MPa or less.
- the thickness of the buffer layer is preferably 1-100 ⁇ m, more preferably 5-80 ⁇ m, and even more preferably 10-60 ⁇ m. By setting the thickness of the buffer layer within the above range, the buffer layer can appropriately relax the stress during back grinding.
- the composition of the buffer layer is not limited as long as it satisfies the above-mentioned indentation depth (Z). preferably an object.
- Each component contained in the layer formed from the buffer layer-forming composition containing the energy ray-polymerizable compound will be described below in order.
- a composition for forming a buffer layer containing an energy ray-polymerizable compound can be cured by being irradiated with an energy ray.
- the composition for forming a buffer layer containing the energy ray-polymerizable compound more specifically contains the urethane (meth)acrylate (a1).
- the composition for forming a buffer layer includes a polymerizable compound (a2) having an alicyclic or heterocyclic group having 6 to 20 ring atoms and/or a polymerizable compound having a functional group. It is more preferable to contain compound (a3).
- the composition for forming a buffer layer may contain a polyfunctional polymerizable compound (a4).
- the composition for forming a buffer layer preferably contains a photopolymerization initiator, and may contain other additives and resin components within a range that does not impair the effects of the present invention.
- a photopolymerization initiator e.g., a photopolymerization initiator
- each component contained in the buffer layer-forming composition containing the energy ray-polymerizable compound will be described in detail below.
- the urethane (meth)acrylate (a1) is a compound having at least a (meth)acryloyl group and a urethane bond, and has the property of being polymerized and cured by energy ray irradiation.
- Urethane (meth)acrylates (a1) are oligomers or polymers.
- the weight average molecular weight (Mw) of component (a1) is preferably 1,000 to 100,000, more preferably 2,000 to 60,000, still more preferably 10,000 to 30,000.
- the number of (meth)acryloyl groups (hereinafter also referred to as "number of functional groups") in component (a1) may be monofunctional, difunctional, or trifunctional or more, but monofunctional or difunctional is preferred. .
- Component (a1) can be obtained, for example, by reacting a terminal isocyanate urethane prepolymer obtained by reacting a polyol compound and a polyvalent isocyanate compound with a (meth)acrylate having a hydroxyl group.
- a component (a1) individually or in combination of 2 or more types.
- the polyol compound used as the raw material for component (a1) is not particularly limited as long as it is a compound having two or more hydroxy groups.
- Specific polyol compounds include, for example, alkylene diols, polyether polyols, polyester polyols, and polycarbonate polyols. Among these, polyester-type polyols and polycarbonate-type polyols are preferred.
- the polyol compound may be a bifunctional diol, a trifunctional triol, or a tetrafunctional or higher polyol, but bifunctional diols are preferred, and polyester diols or polycarbonate diols are more preferred.
- polyvalent isocyanate compounds include aliphatic polyisocyanates such as tetramethylene diisocyanate, hexamethylene diisocyanate and trimethylhexamethylene diisocyanate; Alicyclic diisocyanates such as ,4'-diisocyanate, ⁇ , ⁇ '-diisocyanatedimethylcyclohexane;4,4'-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, tolidine diisocyanate, tetramethylene xylylene diisocyanate, naphthalene- aromatic diisocyanates such as 1,5-diisocyanate; Among these, isophorone diisocyanate, hexamethylene diisocyanate, and xylylene diisocyanate are preferred.
- a urethane (meth)acrylate (a1) can be obtained by reacting a (meth)acrylate having a hydroxyl group with a terminal isocyanate urethane prepolymer obtained by reacting the above-mentioned polyol compound and a polyvalent isocyanate compound.
- the (meth)acrylate having a hydroxy group is not particularly limited as long as it is a compound having a hydroxy group and a (meth)acryloyl group in at least one molecule.
- Specific (meth)acrylates having a hydroxy group include, for example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 4-hydroxycyclohexyl (meth) Acrylate, 5-hydroxycyclooctyl (meth)acrylate, 2-hydroxy-3-phenyloxypropyl (meth)acrylate, pentaerythritol tri(meth)acrylate, polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, etc.
- hydroxyalkyl (meth)acrylate hydroxy group-containing (meth)acrylamide such as N-methylol (meth)acrylamide
- hydroxyalkyl (meth)acrylates are preferred, and 2-hydroxyethyl (meth)acrylate is more preferred.
- the conditions for reacting the isocyanate-terminated urethane prepolymer and the (meth)acrylate having a hydroxy group are preferably conditions for reacting at 60 to 100° C. for 1 to 4 hours in the presence of a solvent and a catalyst added as necessary. .
- the content of component (a1) in the buffer layer-forming composition is preferably 10 to 70 parts by mass, more preferably 20 to 60 parts by mass, relative to the total amount (100 parts by mass) of the buffer layer-forming composition. is.
- Component (a2) is a polymerizable compound having an alicyclic or heterocyclic group having 6 to 20 ring atoms, and more preferably a compound having at least one (meth)acryloyl group. Compounds having one (meth)acryloyl group are preferred.
- component (a2) overlaps with the definition of component (a3) described later, the overlapping part is included in component (a3).
- a compound having at least one (meth)acryloyl group, an alicyclic or heterocyclic group having 6 to 20 ring-forming atoms, and a functional group such as a hydroxyl group, an epoxy group, an amide group, or an amino group is a component
- the compound is included in component (a3).
- the number of ring-forming atoms in the alicyclic group or heterocyclic group of component (a2) is preferably 6 to 20, more preferably 6 to 18, still more preferably 6 to 16, particularly preferably 7 to 12. be.
- Atoms forming the ring structure of the heterocyclic group include, for example, a carbon atom, a nitrogen atom, an oxygen atom, a sulfur atom and the like.
- the number of ring-forming atoms refers to the number of atoms constituting the ring itself of a compound having a structure in which atoms are cyclically bonded, and atoms that do not constitute a ring (for example, hydrogen atoms bonded to atoms that constitute a ring). Also, when the ring is substituted with a substituent, the atoms included in the substituent are not included in the number of ring-forming atoms.
- Examples of specific component (a2) include isobornyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyloxy (meth)acrylate, cyclohexyl (meth)acrylate, alicyclic group-containing (meth)acrylates such as adamantane (meth)acrylate; heterocyclic group-containing (meth)acrylates such as tetrahydrofurfuryl (meth)acrylate, morpholine (meth)acrylate, and cyclic trimethylolpropane formal acrylate; be done.
- a component (a2) individually or in combination of 2 or more types.
- alicyclic group-containing (meth)acrylates isobornyl (meth)acrylate is preferred.
- the content of the component (a2) in the buffer layer-forming composition is preferably 10 to 80 parts by mass, more preferably 30 to 70 parts by mass, relative to the total amount (100 parts by mass) of the buffer layer-forming composition. is.
- Component (a3) is a polymerizable compound containing a functional group such as a hydroxyl group, an epoxy group, an amide group, or an amino group, and is preferably a compound having at least one (meth)acryloyl group. Compounds having one (meth)acryloyl group are preferred.
- the component (a3) has good compatibility with the component (a1), making it easier to adjust the viscosity of the composition for forming a buffer layer within an appropriate range. Moreover, even if the buffer layer is made relatively thin, the buffer performance is improved.
- component (a3) examples include hydroxyl group-containing (meth)acrylates, epoxy group-containing compounds, amide group-containing compounds, amino group-containing (meth)acrylates, and the like.
- hydroxyl group-containing (meth)acrylates examples include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxy Butyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, phenylhydroxypropyl (meth)acrylate, 2-hydroxy-3-phenoxypropyl acrylate and the like.
- epoxy group-containing compounds examples include glycidyl (meth)acrylate, methylglycidyl (meth)acrylate, allyl glycidyl ether, and the like. Among these, epoxy groups such as glycidyl (meth)acrylate and methylglycidyl (meth)acrylate Group-containing (meth)acrylates are preferred.
- amide group-containing compounds include (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, N-methylolpropane(meth)acrylamide, N -Methoxymethyl(meth)acrylamide, N-butoxymethyl(meth)acrylamide and the like.
- amino group-containing (meth)acrylates examples include primary amino group-containing (meth)acrylates, secondary amino group-containing (meth)acrylates, and tertiary amino group-containing (meth)acrylates.
- hydroxyl group-containing (meth)acrylates are preferable, and hydroxyl group-containing (meth)acrylates having an aromatic ring such as phenylhydroxypropyl (meth)acrylate are more preferable.
- the content of the component (a3) in the buffer layer-forming composition is preferably 0 to 40 parts by mass, more preferably 0 to 35 parts by mass, relative to the total amount (100 parts by mass) of the buffer layer-forming composition. , more preferably 0 to 30 parts by mass.
- a polyfunctional polymerizable compound refers to a compound having two or more photopolymerizable unsaturated groups.
- a photopolymerizable unsaturated group is a functional group containing a carbon-carbon double bond, and examples thereof include (meth)acryloyl group, vinyl group, allyl group, vinylbenzyl group and the like. Two or more photopolymerizable unsaturated groups may be combined.
- a three-dimensional network structure (crosslinked structure) is formed.
- the number of crosslinked structures formed by energy ray irradiation tends to increase, compared to when a compound containing only one photopolymerizable unsaturated group is used.
- component (a4) overlaps with the definitions of components (a2) and (a3) described above, the overlap is included in component (a4).
- a compound having an alicyclic or heterocyclic group with 6 to 20 ring atoms and two or more (meth)acryloyl groups is included in the definition of both component (a4) and component (a2).
- the compound is included in component (a4).
- compounds containing functional groups such as hydroxyl groups, epoxy groups, amide groups and amino groups and having two or more (meth)acryloyl groups are included in the definition of both component (a4) and component (a3).
- the compound is included in component (a4).
- the number of photopolymerizable unsaturated groups (number of functional groups) in the polyfunctional polymerizable compound is preferably 2-10, more preferably 3-6.
- the weight average molecular weight of component (a4) is preferably 30-40,000, more preferably 100-10,000, and even more preferably 200-1,000.
- Examples of specific component (a4) include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, and glycol-derived repeating units.
- polyethylene glycol di (meth) acrylate polyethylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) ) acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, divinylbenzene, vinyl (meth)acrylate, divinyl adipate, N,N′-methylenebis(meth)acrylamide and the like.
- Polyethylene glycol di(meth)acrylate generally indicates the number of glycol units in parentheses. For example, when the number of glycol units is 600, it is indicated as polyethylene glycol (600) diacrylate. In addition, you may use a component (a4) individually or in combination of 2 or more types. Among these, polyethylene glycol diacrylate and neopentyl glycol di(meth)acrylate are preferred.
- the content of the component (a4) in the buffer layer-forming composition is preferably 2 to 40 parts by mass, more preferably 3 to 20 parts by mass, relative to the total amount (100 parts by mass) of the buffer layer-forming composition. , more preferably 5 to 15 parts by mass.
- composition for forming a buffer layer may contain a polymerizable compound (a5) other than the components (a1) to (a4) as long as the effects of the present invention are not impaired.
- component (a5) examples include alkyl (meth)acrylates having an alkyl group having 1 to 20 carbon atoms; styrene, hydroxyethyl vinyl ether, hydroxybutyl vinyl ether, N-vinylformamide, N-vinylpyrrolidone, N-vinylcaprolactam, and the like. vinyl compound of: and the like.
- the content of the component (a5) in the buffer layer-forming composition is preferably 0 to 20 parts by mass, more preferably 0 to 10 parts by mass, relative to the total amount (100 parts by mass) of the buffer layer-forming composition. , more preferably 0 to 5 parts by mass, particularly preferably 0 to 2 parts by mass.
- the buffer layer-forming composition preferably further contains a photopolymerization initiator from the viewpoint of shortening the polymerization time by light irradiation and reducing the amount of light irradiation when forming the buffer layer.
- photopolymerization initiators examples include benzoin compounds, acetophenone compounds, acylphosphine oxide compounds, titanocene compounds, thioxanthone compounds, peroxide compounds, and photosensitizers such as amines and quinones.
- 1-hydroxycyclohexylphenyl ketone 2-hydroxy-2-methyl-1-phenyl-propan-1-one
- benzoin benzoin methyl ether
- benzoin ethyl ether benzoin isopropyl ether
- benzylphenyl sulfide tetramethylthiuram monosulfide
- azobisisobutyrolnitrile dibenzyl, diacetyl, 8-chloroanthraquinone, bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide and the like.
- photopolymerization initiators can be used alone or in combination of two or more.
- the content of the photopolymerization initiator in the buffer layer-forming composition is preferably 0.05 to 15 parts by mass, more preferably 0.1 to 10 parts by mass, with respect to 100 parts by mass of the total amount of the energy ray-polymerizable compound. parts by mass, more preferably 0.3 to 5 parts by mass.
- the buffer layer-forming composition may contain other additives as long as the effects of the present invention are not impaired.
- Other additives include, for example, antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, pigments, dyes, and the like.
- the content of each additive in the buffer layer-forming composition is preferably 0.01 to 6 parts by mass with respect to 100 parts by mass of the total amount of the energy ray-polymerizable compound. More preferably, it is 0.1 to 3 parts by mass.
- the buffer layer-forming composition may contain a resin component as long as the effects of the present invention are not impaired.
- the resin component include polyene/thiol-based resins, polyolefin-based resins such as polybutene, polybutadiene, and polymethylpentene, and thermoplastic resins such as styrene-based copolymers.
- the content of these resin components in the buffer layer-forming composition is preferably 0 to 20 parts by mass, more preferably 0 to 10 parts by mass, relative to the total amount (100 parts by mass) of the buffer layer-forming composition. , more preferably 0 to 5 parts by mass, particularly preferably 0 to 2 parts by mass.
- the buffer layer formed from the buffer layer-forming composition containing the energy ray-polymerizable compound is obtained by polymerizing and curing the buffer layer-forming composition having the above composition by energy ray irradiation. That is, the buffer layer is a cured product of the composition for forming a buffer layer.
- the buffer layer contains polymerized units derived from component (a1). Moreover, the buffer layer preferably contains polymerized units derived from the component (a2) and/or polymerized units derived from the component (a3). Furthermore, polymerized units derived from component (a4) and/or polymerized units derived from component (a5) may be contained.
- the content ratio of each polymer unit in the buffer layer usually corresponds to the ratio (feed ratio) of each component constituting the buffer layer-forming composition. For example, when the content of component (a1) in the buffer layer-forming composition is 10 to 70 parts by mass with respect to the total amount (100 parts by mass) of the buffer layer-forming composition, the buffer layer contains component (a1). It contains 10 to 70 parts by mass of the derived polymerized units.
- the buffer layer-forming composition contains 10 to 80 parts by mass of the derived polymerized units.
- the buffer layer is obtained by curing the buffer layer-forming composition described above.
- the viscoelasticity of the buffer layer can be adjusted by selecting the composition of the buffer layer-forming composition. Therefore, in order to control the indentation depth (Z) of the buffer layer within the above range, the types and amounts of the components constituting the composition for forming the buffer layer may be adjusted. Guidelines for adjusting the type and amount of each component are described below. For example, when the urethane (meth)acrylate (a1) has a large number of (meth)acryloyl groups, the crosslinked structure in the buffer layer increases and the indentation depth (Z) decreases.
- the buffer layer contains many cross-linked structures
- the buffer layer becomes harder and the indentation depth (Z) tends to decrease. Therefore, the indentation depth (Z) can be controlled within an appropriate range by adjusting the amount of components involved in the formation of the crosslinked structure.
- components involved in forming a crosslinked structure include (meth)acryloyl groups of urethane (meth)acrylate (a1) and polyfunctional polymerizable compound (a4).
- the polyfunctional polymerizable compound (a4) is easy to use and is a useful component for forming a crosslinked structure.
- a unit having a long chain length includes a urethane chain of urethane (meth)acrylate (a1).
- the buffer layer described above contains additives such as plasticizers, lubricants, infrared absorbers, ultraviolet absorbers, fillers, colorants, antistatic agents, antioxidants, and catalysts, as long as they do not impair the effects of the present invention. You may let Moreover, the buffer layer described above may be transparent or opaque, and may be colored or vapor-deposited as desired.
- a release sheet may be attached to the surface of the adhesive tape. Specifically, the release sheet is attached to the surface of the adhesive layer of the adhesive tape. The release sheet is attached to the surface of the adhesive layer to protect the adhesive layer during transportation and storage. The release sheet is releasably attached to the adhesive tape, and is peeled off and removed from the adhesive tape before the adhesive tape is used (that is, before wafer attachment).
- a release sheet having at least one surface subjected to a release treatment is used, and specific examples include a release sheet base material coated with a release agent on the surface thereof.
- a resin film is preferable, and as the resin constituting the resin film, for example, polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin, polyethylene naphthalate resin, polypropylene resin, polyethylene resin, etc. and the like polyolefin resins.
- polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin, polyethylene naphthalate resin, polypropylene resin, polyethylene resin, etc. and the like polyolefin resins.
- release agents include rubber-based elastomers such as silicone-based resins, olefin-based resins, isoprene-based resins and butadiene-based resins, long-chain alkyl-based resins, alkyd-based resins, fluorine-based resins, and the like.
- the thickness of the release sheet is not particularly limited, but is preferably 10-200 ⁇ m, more preferably 20-150 ⁇ m.
- the method for producing the pressure-sensitive adhesive tape of the present invention is not particularly limited, and it can be produced by a known method.
- a method for producing an adhesive tape having a substrate, an adhesive layer provided on one side of the substrate, and a buffer layer provided on the other side of the substrate is as follows. be.
- the buffer layer is formed from a buffer layer-forming composition containing an energy ray-polymerizable compound, a buffer layer provided by coating and curing the buffer layer-forming composition on a release sheet, and a substrate; and removing the release sheet, a laminate of the buffer layer and the substrate is obtained.
- the adhesive layer provided on the release sheet can be attached to the substrate side of the laminate to manufacture an adhesive tape in which the release sheet is attached to the surface of the adhesive layer.
- the release sheet attached to the surface of the pressure-sensitive adhesive layer may be peeled off and removed before use of the pressure-sensitive adhesive tape.
- an adhesive (adhesive composition) is directly applied on a release sheet by a known coating method, and the coating film is dried by heating to form an adhesive layer. Layers can be formed.
- an adhesive may be directly applied to one side of the substrate to form an adhesive layer.
- the method of applying the pressure-sensitive adhesive include the spray coating method, bar coating method, knife coating method, roll coating method, blade coating method, die coating method, gravure coating method, etc. shown in the manufacturing method of the buffer layer.
- the composition for forming the buffer layer is directly applied on the release sheet by a known coating method to form a coating film, and the coating film is irradiated with energy rays.
- a buffer layer can be formed.
- the buffer layer may be formed by directly applying the composition for forming a buffer layer on one side of the base material and drying it by heating or by irradiating the coating film with energy rays.
- Examples of methods for applying the buffer layer-forming composition include spin coating, spray coating, bar coating, knife coating, roll coating, blade coating, die coating, and gravure coating.
- an organic solvent may be added to the composition for forming a buffer layer, and the composition may be applied in the form of a solution onto the release sheet.
- the composition for forming a buffer layer contains an energy ray-polymerizable compound
- the hardening of the buffer layer may be performed in one hardening process, or may be performed in multiple times.
- the coating film on the release sheet may be completely cured to form a buffer layer and then attached to the base material, and a semi-cured buffer layer forming film may be formed without completely curing the coating film. Then, after bonding the buffer layer-forming film to the base material, the energy beam may be irradiated again to completely harden the film to form the buffer layer.
- Ultraviolet rays are preferable as the energy rays to be irradiated in the curing treatment.
- the coating film of the composition for forming a buffer layer may be exposed, but the coating film is covered with a release sheet or a base material, and the energy beam is irradiated in a state where the coating film is not exposed. Curing is preferred.
- the method for producing an adhesive tape having buffer layers on both sides of a base material is, for example, by obtaining a laminate in which a buffer layer, a base material, and a buffer layer are laminated in this order by the method described above, and then A pressure-sensitive adhesive layer may be formed on the buffer layer side.
- the pressure-sensitive adhesive tape according to the present invention is preferably applied to the surface of a semiconductor wafer and used when back-grinding the wafer. More preferably, the pressure-sensitive adhesive tape according to the present invention is preferably used in DBG in which wafer backside grinding and wafer singulation are performed simultaneously. Particularly preferably, the adhesive tape according to the present invention is preferably used for LDBG in which a group of chips with a small kerf width can be obtained when a semiconductor wafer is singulated.
- chip group refers to a plurality of semiconductor chips arranged in a wafer shape and held on the adhesive tape according to the present invention.
- the method for manufacturing a semiconductor device includes at least steps 1 to 5 below.
- Step 1 A step of applying the above adhesive tape to the surface of a semiconductor wafer and cutting the adhesive tape along the outer periphery of the semiconductor wafer
- Step 2 Forming a groove from the front surface side of the semiconductor wafer, or forming a groove on the front surface or the back surface of the semiconductor wafer
- Step 3 The semiconductor wafer with the adhesive tape attached to the surface and the groove or modified region formed is ground from the back side to form the groove or modified region
- Step 5 From the singulated semiconductor wafer (i.e., a plurality of semiconductor chips), The process of peeling off the adhesive tape
- Step 1 the adhesive tape of the present invention is attached to the surface of a semiconductor wafer via an adhesive layer, and cut along the outer circumference of the semiconductor wafer.
- the adhesive tape is attached so as to cover the semiconductor wafer and the peripheral table extending around its periphery.
- the adhesive tape is cut by a cutter or the like along the outer periphery of the semiconductor wafer.
- the cutting speed is usually 10-300 mm/s.
- the temperature of the cutter blade during cutting may be room temperature, or the cutting may be performed by heating the cutter blade.
- step 1 may be performed before step 2, which will be described later, or after step 2.
- step 1 is preferably performed before step 2.
- step 1 is performed after step 2.
- the semiconductor wafer used in this manufacturing method may be a silicon wafer, a wafer of gallium arsenide, silicon carbide, lithium tantalate, lithium niobate, gallium nitride, indium phosphide, or the like, or a glass wafer. .
- the thickness of the semiconductor wafer before grinding is not particularly limited, it is usually about 500 to 1000 ⁇ m.
- a semiconductor wafer usually has a circuit formed on its surface. Formation of circuits on the wafer surface can be performed by various methods including conventional methods such as an etching method and a lift-off method.
- Step 2 grooves are formed from the front surface side of the semiconductor wafer, or modified regions are formed inside the semiconductor wafer from the front surface or rear surface of the semiconductor wafer.
- the grooves formed in this process are shallower than the thickness of the semiconductor wafer.
- the grooves can be formed by dicing using a conventionally known wafer dicing device or the like. Also, the semiconductor wafer is singulated into a plurality of semiconductor chips along the grooves in step 3, which will be described later.
- the modified region is an embrittled portion of the semiconductor wafer, and the semiconductor wafer is thinned by grinding in the grinding process, or the semiconductor wafer is destroyed by grinding force, resulting in a semiconductor chip.
- This is the region that becomes the starting point for individualization into . That is, in step 2, the grooves and modified regions are formed along dividing lines along which the semiconductor wafer is divided into individual semiconductor chips in step 3, which will be described later.
- the modified region is formed by laser irradiation focused on the inside of the semiconductor wafer, and the modified region is formed inside the semiconductor wafer.
- the laser irradiation may be performed from the front side or the back side of the semiconductor wafer.
- the laser is applied to the semiconductor wafer through the adhesive tape.
- the semiconductor wafer on which the adhesive tape is attached and the grooves or modified regions are formed is placed on the chuck table and is held by being sucked by the chuck table. At this time, the semiconductor wafer is sucked with its surface side arranged on the table side.
- Step 3 After steps 1 and 2, the back surface of the semiconductor wafer on the chuck table is ground to singulate the semiconductor wafer into a plurality of semiconductor chips.
- the back surface grinding is performed so as to thin the semiconductor wafer at least to the position reaching the bottom of the groove. By this back-grinding, the grooves become cuts penetrating the wafer, and the semiconductor wafer is divided by the cuts into individual semiconductor chips.
- the ground surface may reach the modified region by grinding, but it does not have to reach the modified region strictly. That is, the semiconductor wafer may be ground from the modified region to a position close to the modified region so that the semiconductor wafer is broken into individual semiconductor chips starting from the modified region.
- the actual singulation of the semiconductor chips may be performed by applying a pick-up tape, which will be described later, and then stretching the pick-up tape.
- the shape of the individualized semiconductor chips may be a square or an elongated shape such as a rectangle.
- the thickness of the individualized semiconductor chips is not particularly limited, it is preferably about 5 to 100 ⁇ m, more preferably 10 to 45 ⁇ m.
- LDBG a modified region is provided inside the wafer with a laser, and the wafer is singulated by stress or the like during wafer backside grinding. ⁇ 45 ⁇ m becomes easy.
- the size of the individualized semiconductor chips is not particularly limited, but the chip size is preferably less than 600 mm 2 , more preferably less than 400 mm 2 , and even more preferably less than 300 mm 2 .
- Step 4 After backgrinding, dry polishing is performed prior to picking up the chips. Dry polishing refers to a process of mirror-finishing the rear surface of the individualized chips with a dry grindstone. Through this process, the crushed layer on the back surface of the chip is reduced and the bending strength is increased.
- the tip is heated to about 60° C. by frictional heat. This heat heats the buffer layer of the pressure-sensitive adhesive tape for semiconductor processing, making it easier to deform.
- the pushing depth (Z) at 60° C. is controlled within a predetermined range as described above, so deformation of the buffer layer can be suppressed and chipping can be reduced. be done.
- Step 5 the adhesive tape for semiconductor processing is peeled off from the individualized semiconductor wafer (that is, a plurality of semiconductor chips arranged in a wafer shape). This step is performed, for example, by the following method.
- the adhesive layer of the adhesive tape is formed from an energy ray-curable adhesive
- the adhesive layer is cured by irradiation with energy rays.
- a pick-up tape is attached to the rear surface side of the separated semiconductor wafer, and the position and direction are aligned so that pick-up is possible.
- the ring frame arranged on the outer peripheral side of the wafer is also adhered to the pick-up tape, and the outer peripheral edge of the pick-up tape is fixed to the ring frame.
- the wafer and the ring frame may be attached to the pickup tape at the same time, or may be attached at separate timings.
- the adhesive tape is peeled off from the plurality of semiconductor chips held on the pickup tape.
- the pickup tape is not particularly limited, it is composed of, for example, a base material and an adhesive tape provided with an adhesive layer provided on at least one surface of the base material.
- an adhesive tape can be used instead of the pickup tape.
- the adhesive tape includes a laminate of a film-like adhesive and a release sheet, a laminate of a dicing tape and a film-like adhesive, and an adhesive layer and a release sheet that function as both a dicing tape and a die bonding tape.
- a dicing die bonding tape and the like can be mentioned. That is, the present embodiment may include a step of attaching a dicing die bonding tape to the back surface of the semiconductor wafer.
- a film-like adhesive may be applied to the back side of the semiconductor wafer that has been divided into individual pieces. When a film adhesive is used, the film adhesive may have the same shape as the wafer.
- the plurality of semiconductor chips on the adhesive tape or the pickup tape is a semiconductor. It is picked up together with the adhesive layer divided into the same shape as the chip. Then, the semiconductor chip is fixed on a substrate or the like via an adhesive layer to manufacture a semiconductor device. The division of the adhesive layer is performed by laser or expansion.
- a protective film forming tape for forming a protective film on the back surface of the chip may be used instead of the adhesive tape.
- the adhesive tape according to the present invention is used in a method for singulating semiconductor wafers by DBG or LDBG. It can be preferably used for LDBG where a chip group having a smaller width and a thinner thickness can be obtained.
- the adhesive tape according to the present invention can also be used for normal back grinding, and can also be used to temporarily hold a workpiece during processing of glass, ceramics, etc. It can also be used. It can also be used as various removable adhesive tapes.
- a dynamic microhardness tester manufactured by Shimadzu Corporation, product name “DUH-W201S”
- a triangular pyramid-shaped indenter with a tip curvature radius of 100 nm and an inter-edge angle of 115° were used as the indenter, at 23° C. and 50% RH. (relative humidity) environment.
- RH. relative humidity
- the release sheet on the buffer layer of the adhesive tape prepared was removed, placed so that the buffer layer was exposed, and left for 60 seconds.
- the tip of the triangular pyramid-shaped indenter was pushed into the buffer layer at a speed of 10 ⁇ m/min, and the pushing depth (Z) was measured when the compressive load reached 2 mN.
- the wafer was ground (including dry polishing) to a thickness of 30 ⁇ m, and the wafer was singulated into a plurality of chips.
- energy rays (ultraviolet rays) were irradiated, and a dicing tape (Adwill D-175D, manufactured by Lintec Corporation) was applied to the opposite side of the adhesive tape for semiconductor processing, after which the adhesive tape for semiconductor processing was peeled off.
- the individualized chips were observed with a digital microscope, and the chips with cracks were counted and classified according to the size of the cracks according to the following criteria.
- the crack size ( ⁇ m) is obtained by comparing the crack length ( ⁇ m) along the vertical direction of the chip and the crack length ( ⁇ m) along the horizontal direction of the chip, and the larger of the values.
- Example 1 All parts by mass in the following examples and comparative examples are in terms of solid content.
- a PET film with a double-sided coat layer manufactured by Toyobo, product name [Cosmoshine A4300], thickness: 50 ⁇ m, Young's modulus at 23° C.: 2550 MPa was prepared.
- BA N-butyl acrylate
- MMA methyl methacrylate
- 2HEA 2-hydroxyethyl acrylate
- 2HEA 2-hydroxyethyl acrylate
- Buffer layer preparation of composition for forming buffer layer
- Urethane acrylate oligomer (CN8888) purchased from Sartomer, isobornyl acrylate (IBXA), cyclic trimethylolpropane formal acrylate, neopentyl glycol diacrylate, and polyethylene glycol (600) diacrylate were used as energy ray polymerizable compounds.
- 2-Hydroxy-2-methyl-1-phenyl-propan-1-one manufactured by BASF, product name "Omnirad 1173" was added as a photopolymerization initiator. 0 parts by mass were blended to prepare a composition for forming a buffer layer.
- Release sheet manufactured by Lintec, trade name "SP-PET381031” polyethylene terephthalate (PET) film subjected to silicone release treatment, thickness: 38 ⁇ m. was applied to form a coating film. Then, the coating film was semi-cured by irradiating the coating film with ultraviolet rays to form a semi-cured buffer layer with a thickness of 28 ⁇ m.
- the above ultraviolet irradiation is performed using a belt conveyor type ultraviolet irradiation device (product name “ECS-401GX” manufactured by Eyegraphics) and a high-pressure mercury lamp (product name “H04-L41” manufactured by Eyegraphics).
- the measurement was carried out under irradiation conditions of a height of 260 mm, an output of 80 W/cm, an illuminance of 70 mW/cm 2 and an irradiation amount of 30 mW/cm 2 .
- Examples 2 to 4 Comparative Examples 1 and 2> A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that the composition of the composition for forming a buffer layer was changed as shown in Table 1. Table 1 shows the results.
- the deformation of the buffer layer at 60 ° C. is suppressed in the adhesive tape for semiconductor processing according to the present invention. is reduced, and the occurrence of chipping can be suppressed.
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Abstract
Description
(1)基材と、当該基材の一方の面側に設けられた緩衝層と、当該基材の他方の面側に設けられた粘着剤層とを有する粘着テープであって、
60℃に加熱された緩衝層に、先端曲率半径100nm及び稜間角115°の三角錘形状圧子の先端を10μm/分の速度で、該緩衝層に押し込んだ際の圧縮荷重が2mNに到達するのに必要な押し込み深さ(Z)が3.0μm以下である、半導体加工用粘着テープ。
前記半導体ウエハの表面側から溝を形成し、又は前記半導体ウエハの表面若しくは裏面から半導体ウエハ内部に改質領域を形成する工程と、
前記粘着テープが表面に貼付され、かつ前記溝又は前記改質領域が形成された半導体ウエハを、裏面側から研削して、前記溝又は前記改質領域を起点として複数のチップに個片化させる工程と、
前記個片化されたチップの裏面をドライポリッシュする工程と、
前記複数のチップから前記粘着テープを剥離する工程と、
を備える半導体装置の製造方法。
本明細書において、例えば「(メタ)アクリレート」とは、「アクリレート」及び「メタクリレート」の双方を示す語として用いており、他の類似用語についても同様である。
半導体ウエハの「表面」とは回路が形成された面を指し、「裏面」とは回路が形成されていない面を指す。
半導体ウエハの個片化とは、半導体ウエハを回路毎に分割し、半導体チップを得ることを言う。
以下に、本実施形態に係る半導体加工用粘着テープの各部材の構成をさらに詳細に説明する。
基材11は、従来より半導体加工用粘着テープの基材として用いられている各種の樹脂フィルムが特に制限されることなく用いられ得る。ウエハやチップをより確実に保持する観点から、基材11の23℃におけるヤング率が1000MPa以上であることが好ましい。ヤング率が1000MPa未満の基材を使用すると、粘着テープによる半導体ウエハ又は半導体チップに対する保持性能が低下し、裏面研削時の振動等を抑制することができず、半導体チップの欠けや破損が発生しやすくなる。一方、基材の23℃におけるヤング率を1000MPa以上とすることで、粘着テープによる半導体ウエハ又は半導体チップに対する保持性能が高まり、裏面研削時の振動等を抑制し、半導体チップの欠けや破損を防止できる。また、粘着テープを半導体チップから剥離する際の応力を小さくすることが可能になり、テープ剥離時に生じるチップ欠けや破損を防止できる。さらに、粘着テープを半導体ウエハに貼付する際の作業性も良好にすることが可能である。このような観点から、基材の23℃におけるヤング率は、より好ましくは1800~30000MPa、さらに好ましくは2500~6000MPaである。
粘着剤層12は、常温において適度な感圧接着性を有する限り特に限定はされないが、23℃におけるせん断貯蔵弾性率が0.05~0.50MPaであるものが好ましい。半導体ウエハの表面には、回路等が形成され通常凹凸がある。粘着剤層のせん断貯蔵弾性率が上記範囲内となることで、凹凸があるウエハ表面に粘着テープを貼付する際、ウエハ表面の凹凸と粘着剤層とを十分に接触させ、かつ粘着剤層の接着性を適切に発揮させることが可能になる。そのため、粘着テープの半導体ウエハへの固定を確実に行い、かつ裏面研削時にウエハ表面を適切に保護することが可能になる。これらの観点から、粘着剤層のせん断貯蔵弾性率は、0.12~0.35MPaであることがより好ましい。なお、粘着剤層のせん断貯蔵弾性率とは、粘着剤層がエネルギー線硬化性粘着剤から形成される場合には、エネルギー線照射による硬化前のせん断貯蔵弾性率を意味する。
また、粘着剤層は、エネルギー線硬化性粘着剤から形成されることが好ましい。粘着剤層は、エネルギー線硬化性粘着剤から形成されることで、エネルギー線照射による硬化前には、23℃におけるせん断貯蔵弾性率を上記範囲に設定しつつ、硬化後においては剥離力を1000mN/50mm以下に容易に設定することが可能になる。
粘着剤層を形成するエネルギー線硬化性粘着剤としては、例えば、非エネルギー線硬化性の粘着性樹脂(「粘着性樹脂I」ともいう)に加え、粘着性樹脂以外のエネルギー線硬化性化合物を含むエネルギー線硬化性粘着剤組成物(以下、「X型の粘着剤組成物」ともいう)が使用可能である。また、エネルギー線硬化性粘着剤として、非エネルギー線硬化性の粘着性樹脂の側鎖に不飽和基を導入したエネルギー線硬化性の粘着性樹脂(以下、「粘着性樹脂II」ともいう)を主成分として含み、粘着性樹脂以外のエネルギー線硬化性化合物を含まない粘着剤組成物(以下、「Y型の粘着剤組成物」ともいう)も使用してもよい。
以下、粘着性樹脂として、アクリル系樹脂が使用されるアクリル系粘着剤についてより詳述に説明する。
X型又はXY型の粘着剤組成物に含有されるエネルギー線硬化性化合物としては、分子内に不飽和基を有し、エネルギー線照射により重合硬化可能なモノマー又はオリゴマーが好ましい。このようなエネルギー線硬化性化合物としては、例えば、トリメチロールプロパントリ(メタ)アクリレート、ペンタエリスリトール(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、1,4-ブチレングリコールジ(メタ)アクリレート、1,6-へキサンジオール(メタ)アクリレート等の多価(メタ)アクリレートモノマー、ウレタン(メタ)アクリレート、ポリエステル(メタ)アクリレート,ポリエーテル(メタ)アクリレート、エポキシ(メタ)アクリレート等のオリゴマーが挙げられる。
粘着剤組成物は、さらに架橋剤を含有することが好ましい。架橋剤は、例えば粘着性樹脂が有する官能基含有モノマー由来の官能基に反応して、粘着性樹脂同士を架橋するものである。架橋剤としては、例えば、トリレンジイソシアネート、ヘキサメチレンジイソシアネート等、及びそれらのアダクト体等のイソシアネート系架橋剤;エチレングリコールグリシジルエーテル等のエポキシ系架橋剤;ヘキサ〔1-(2-メチル)-アジリジニル〕トリフオスファトリアジン等のアジリジン系架橋剤;アルミニウムキレート等のキレート系架橋剤;等が挙げられる。これらの架橋剤は、単独で又は2種以上を組み合わせて用いてもよい。
また、粘着剤組成物がエネルギー線硬化性である場合には、粘着剤組成物は、さらに光重合開始剤を含有することが好ましい。光重合開始剤を含有することで、紫外線等の比較的低エネルギーのエネルギー線でも、粘着剤組成物の硬化反応を十分に進行させることができる。
粘着剤組成物は、本発明の効果を損なわない範囲において、その他の添加剤を含有してもよい。その他の添加剤としては、例えば、帯電防止剤、酸化防止剤、軟化剤(可塑剤)、充填剤、防錆剤、顔料、染料等が挙げられる。これらの添加剤を配合する場合、添加剤の配合量は、粘着性樹脂100質量部に対して、好ましくは0.01~6質量部である。
本実施形態に係る粘着テープ10は、緩衝層13を有する。基材11の一方の面に粘着剤層12が設けられ、基材11の他方の面に緩衝層13が設けられる。
以下、エネルギー線重合性化合物を含む緩衝層形成用組成物から形成される層に含まれる各成分について順に説明する。
エネルギー線重合性化合物を含む緩衝層形成用組成物は、エネルギー線が照射されることで硬化することが可能になる。
また、エネルギー線重合性化合物を含む緩衝層形成用組成物は、より具体的には、ウレタン(メタ)アクリレート(a1)を含むことが好ましい。また、緩衝層形成用組成物は、上記(a1)に加えて、環形成原子数6~20の脂環基又は複素環基を有する重合性化合物(a2)及び/又は官能基を有する重合性化合物(a3)を含有することがより好ましい。また、緩衝層形成用組成物は、上記(a1)~(a3)成分に加えて、多官能重合性化合物(a4)を含有してもよい。さらに、緩衝層形成用組成物は光重合開始剤を含有することが好ましく、本発明の効果を損なわない範囲において、その他の添加剤や樹脂成分を含有してもよい。
以下、エネルギー線重合性化合物を含む緩衝層形成用組成物中に含まれる各成分について詳細に説明する。
ウレタン(メタ)アクリレート(a1)とは、少なくとも(メタ)アクリロイル基及びウレタン結合を有する化合物であり、エネルギー線照射により重合硬化する性質を有するものである。ウレタン(メタ)アクリレート(a1)は、オリゴマーまたはポリマーである。
これらの中でも、イソホロンジイソシアネート、ヘキサメチレンジイソシアネート、キシリレンジイソシアネートが好ましい。
これらの中でも、ヒドロキシアルキル(メタ)アクリレートが好ましく、2-ヒドロキシエチル(メタ)アクリレートがより好ましい。
成分(a2)は、環形成原子数6~20の脂環基又は複素環基を有する重合性化合物であり、さらには、少なくとも1つの(メタ)アクリロイル基を有する化合物であることが好ましく、より好ましくは1つの(メタ)アクリロイル基を有する化合物である。成分(a2)を用いることで、得られる緩衝層形成用組成物の成膜性を向上させることができる。
脂環基含有(メタ)アクリレートの中ではイソボルニル(メタ)アクリレートが好ましい。
成分(a3)は、水酸基、エポキシ基、アミド基、アミノ基等の官能基を含有する重合性化合物であり、さらには、少なくとも1つの(メタ)アクリロイル基を有する化合物であることが好ましく、より好ましくは1つの(メタ)アクリロイル基を有する化合物である。
なお、成分(a3)は、単独で又は2種以上を組み合わせて用いてもよい。
多官能重合性化合物とは、光重合性不飽和基を2つ以上有する化合物をいう。光重合性不飽和基は、炭素-炭素二重結合を含む官能基であり、例えば、(メタ)アクリロイル基、ビニル基、アリル基、ビニルベンジル基等が挙げられる。光重合性不飽和基は2種以上を組み合わせてもよい。多官能重合性化合物中の光重合性不飽和基と成分(a1)中の(メタ)アクリロイル基とが反応したり、成分(a4)中の光重合性不飽和基同士が反応することで、三次元網目構造(架橋構造)が形成される。多官能重合性化合物を使用すると、光重合性不飽和基を1つしか含まない化合物を使用した場合と比較して、エネルギー線照射により形成される架橋構造が増加しやすい。
なお、成分(a4)は、単独で又は2種以上を組み合わせて用いてもよい。
これらの中でも、ポリエチレングリコールジアクリレート、ネオペンチルグリコールジ(メタ)アクリレートが好ましい。
緩衝層形成用組成物には、本発明の効果を損なわない範囲において、上記の成分(a1)~(a4)以外のその他の重合性化合物(a5)を含有してもよい。
緩衝層形成用組成物には、緩衝層を形成する際、光照射による重合時間を短縮させ、また、光照射量を低減させる観点から、さらに光重合開始剤を含有することが好ましい。
緩衝層形成用組成物には、本発明の効果を損なわない範囲において、その他の添加剤を含有してもよい。その他の添加剤としては、例えば、帯電防止剤、酸化防止剤、軟化剤(可塑剤)、充填剤、防錆剤、顔料、染料等が挙げられる。これらの添加剤を配合する場合、緩衝層形成用組成物中の各添加剤の含有量は、エネルギー線重合性化合物の合計量100質量部に対して、好ましくは0.01~6質量部、より好ましくは0.1~3質量部である。
緩衝層形成用組成物には、本発明の効果を損なわない範囲において、樹脂成分を含有してもよい。樹脂成分としては、例えば、ポリエン・チオール系樹脂や、ポリブテン、ポリブタジエン、ポリメチルペンテン等のポリオレフィン系樹脂、及びスチレン系共重合体等の熱可塑性樹脂等が挙げられる。
緩衝層は、上記した緩衝層形成用組成物を硬化することで得られる。緩衝層の粘弾性は、緩衝層形成用組成物の組成の選択によって調整できる。したがって、緩衝層の押し込み深さ(Z)を前記の範囲に制御するためには、緩衝層形成用組成物を構成する上記成分の種類や量を調整すれば良い。以下に各成分の種類や量を調整するための指針を説明する。
たとえば、ウレタン(メタ)アクリレート(a1)の(メタ)アクロイル基の数が多いと緩衝層内に架橋構造が増加し、押し込み深さ(Z)は減少する。
ウレタン(メタ)アクリレート(a1)、環形成原子数6~20の脂環基又は複素環基を有する重合性化合物(a2)、官能基を有する重合性化合物(a3)、多官能重合性化合物(a4)の種類や量によって押し込み深さを調整できる。
粘着テープの表面には、剥離シートが貼付されていてもよい。剥離シートは、具体的には、粘着テープの粘着剤層の表面に貼付される。剥離シートは、粘着剤層表面に貼付されることで輸送時、保管時に粘着剤層を保護する。剥離シートは、剥離可能に粘着テープに貼付されており、粘着テープが使用される前(すなわち、ウエハ貼付前)には、粘着テープから剥離されて取り除かれる。
剥離シートは、少なくとも一方の面が剥離処理をされた剥離シートが用いられ、具体的には、剥離シート用基材の表面上に剥離剤を塗布したもの等が挙げられる。
剥離シートの厚さは、特に制限ないが、好ましくは10~200μm、より好ましくは20~150μmである。
本発明の粘着テープの製造方法としては、特に制限はなく、公知の方法により製造することができる。
例えば、基材と、当該基材の一方の面側に設けられた粘着剤層と、当該基材の他方の面側に設けられた緩衝層とを有する粘着テープの製造方法は以下のとおりである。
本発明に係る粘着テープは、好ましくは、半導体ウエハの表面に貼付してウエハの裏面研削が行う場合に使用される。より好ましくは、本発明に係る粘着テープは、ウエハの裏面研削とウエハの個片化とを同時に行うDBGにおいて好ましく使用される。特に好ましくは、本発明に係る粘着テープは、半導体ウエハを個片化した際に、カーフ幅の小さいチップ群が得られるLDBGに好ましく使用される。なお、「チップ群」とは、本発明に係る粘着テープ上に保持された、ウエハ形状に整列している複数の半導体チップをいう。
粘着テープの非限定的な使用例として、以下に半導体装置の製造方法をさらに具体的に説明する。
工程1:上記の粘着テープを半導体ウエハの表面に貼付し、粘着テープを半導体ウエハの外周に沿って切断する工程
工程2:半導体ウエハの表面側から溝を形成し、又は半導体ウエハの表面若しくは裏面から半導体ウエハ内部に改質領域を形成する工程
工程3:粘着テープが表面に貼付され、かつ上記溝又は改質領域が形成された半導体ウエハを、裏面側から研削して、溝又は改質領域を起点として、複数のチップに個片化させる工程
工程4:前記個片化されたチップの裏面をドライポリッシュする工程
工程5:個片化された半導体ウエハ(すなわち、複数の半導体チップ)から、粘着テープを剥離する工程
(工程1)
工程1では、本発明の粘着テープを、粘着剤層を介して半導体ウエハ表面に貼付し、半導体ウエハの外周に沿って切断する。粘着テープは、半導体ウエハおよびその外周に拡がる外周テーブルを覆うように貼り付けられる。そして、粘着テープは、半導体ウエハの外周に沿って、カッター等により切断される。切断速度は、通常10~300mm/sである。切断時のカッター刃の温度は室温でもよく、また、カッター刃を加熱して切断してもよい。
工程2では、半導体ウエハの表面側から溝を形成し、又は半導体ウエハの表面又は裏面から半導体ウエハの内部に改質領域を形成する。
本工程で形成される溝は、半導体ウエハの厚さより浅い深さの溝である。溝の形成は、従来公知のウエハダイシング装置等を用いてダイシングにより行うことが可能である。また、半導体ウエハは、後述する工程3において、溝に沿って複数の半導体チップに個片化される。
工程1及び工程2の後、チャックテーブル上の半導体ウエハの裏面を研削して、半導体ウエハを複数の半導体チップに個片化する。
ここで、裏面研削は、半導体ウエハに溝が形成される場合には、少なくとも溝の底部に至る位置まで半導体ウエハを薄くするように行う。この裏面研削により、溝は、ウエハを貫通する切り込みとなり、半導体ウエハは切り込みにより分割されて、個々の半導体チップに個片化される。
裏面研削の終了後、チップのピックアップに先立ち、ドライポリッシュを行う。ドライポリッシュとは、個片化されたチップの裏面を乾式砥石により、鏡面仕上げする工程を言う。この工程を経ることで、チップ裏面の破砕層が減少し、抗折強度が高くなる。
次に、個片化された半導体ウエハ(すなわち、ウエハ形状に整列している複数の半導体チップ)から、半導体加工用粘着テープを剥離する。本工程は、例えば、以下の方法により行う。
なお、ピックアップテープは、特に限定されないが、例えば、基材と、基材の少なくとも一方の面に設けられた粘着剤層を備える粘着テープによって構成される。
ダイナミック微小硬度計(島津製作所(株)製、製品名「DUH-W201S」)、及び圧子として、先端曲率半径100nm、稜間角115°の三角錐形状圧子を使用し、23℃、50%RH(相対湿度)の環境下で測定した。具体的には、60℃に加温したダイナミック微小硬度計のガラスプレート上に、作製した粘着テープの緩衝層上の剥離シートを除去し、緩衝層が表出するように設置し、60秒間静置後、当該緩衝層に対して、上記三角錐形状圧子の先端を10μm/分の速度で押し込み、圧縮荷重が2mNに到達した際の押し込み深さ(Z)の測定を行った。
直径12インチ、厚み775μmのシリコンウエハに、実施例および比較例で製造した半導体加工用粘着テープを、バックグラインド用テープラミネーター(リンテック社製、装置名「RAD3510F/12」)を用いて貼付した。レーザーソー(ディスコ社製、装置名「DFL7361」)を用い、ウエハに格子状の改質領域を形成した。なお、格子サイズは10mm×10mmとした。
大クラック:クラックのサイズが20μm超
中クラック:クラックのサイズが10μm以上20μm以下
小クラック:クラックのサイズが10μm未満
また、以下の式に基づき、クラック発生率(%)を算出した。クラック発生率が2.0%以下であり、大クラックの個数が0個、中クラックの個数が10個以下、小クラックの個数が20個以下の場合を「A」、それ以外の場合を「F」と評価した。
クラック発生率(%)=クラックが発生したチップ数/全チップ数×100
<実施例1>
(1)基材
基材として、両面コート層付PETフィルム(東洋紡製、製品名[コスモシャインA4300]、厚み:50μm、23℃におけるヤング率:2550MPa)を準備した。
(粘着剤組成物の調製)
N-ブチルアクリレート(BA)、メチルメタクリレート(MMA)及び2-ヒドロキシエチルアクリレート(2HEA)由来の構成単位を有するアクリル系共重合体(BA/MMA/2EHA=52/20/28(質量%)、重量平均分子量約50万)を100質量部、多官能ウレタンアクリレート系紫外線硬化型樹脂を6質量部、ジイソシアネート系硬化剤を1質量部、及び光重合開始剤として、ビス(2,4,6-トリメチルベンゾイル)フェニルフォスフィンオキシドを1質量部配合して、メチルエチルケトンで希釈し、固形分濃度32質量%の粘着剤の溶液を調製した。そして、剥離シート(リンテック社製、商品名「SP-PET381031」、シリコーン剥離処理を行ったポリエチレンテレフタレート(PET)フィルム、厚さ:38μm)の剥離処理がされた面上に、上記の粘着剤組成物の溶液を塗布し、乾燥させて、厚さ20μmの粘着剤層を有する、粘着剤層付き剥離シートを作製した。
(緩衝層形成用組成物の調製)
エネルギー線重合性化合物として、サートマー社より購入したウレタンアクリレート系オリゴマー(CN8888)、イソボルニルアクリレート(IBXA)、環状トリメチロールプロパンフォルマルアクリレート、ネオペンチルグリコールジアクリレート、ポリエチレングリコール(600)ジアクリレートを、表1に記載の配合量で配合し、さらに光重合開始剤として、2-ヒドロキシ-2-メチル-1-フェニル-プロパン-1-オン(BASF社製、製品名「Omnirad 1173」)を2.0質量部配合し、緩衝層形成用組成物を調製した。
次いで、上記両面コート層付きPETフィルムの第2のコート層上に、上記粘着剤層付き剥離シートの粘着剤層を貼り合わせ半導体加工用粘着テープを作製した。半導体加工用粘着テープを用いて緩衝層の押し込み深さ(Z)を測定し、クラック評価を行った。結果を表1に示す。
緩衝層形成用組成物の組成を表1のように変更したほかは、実施例1と同様にして半導体加工用粘着テープを作製した。結果を表1に示す。
11 基材
12 粘着剤層
13 緩衝層
Claims (6)
- 基材と、当該基材の一方の面側に設けられた緩衝層と、当該基材の他方の面側に設けられた粘着剤層とを有する粘着テープであって、
60℃に加熱された緩衝層に、先端曲率半径100nm及び稜間角115°の三角錘形状圧子の先端を10μm/分の速度で、該緩衝層に押し込んだ際の圧縮荷重が2mNに到達するのに必要な押し込み深さ(Z)が3.0μm以下である、半導体加工用粘着テープ。 - 前記基材の23℃におけるヤング率が1000MPa以上である、請求項1に記載の半導体加工用粘着テープ。
- 前記緩衝層が、エネルギー線重合性化合物を含む緩衝層形成用組成物の硬化物である、請求項1または2に記載の半導体加工用粘着テープ。
- 半導体ウエハ表面に溝が形成され、又は半導体ウエハに改質領域が形成された半導体ウエハの裏面を研削して、その研削により半導体ウエハを半導体チップに個片化する工程において、半導体ウエハの表面に貼付されて使用される、請求項1~3のいずれかに記載の半導体加工用粘着テープ。
- 請求項1~4のいずれかに記載の半導体加工用粘着テープを半導体ウエハの表面に貼付し、当該粘着テープを当該半導体ウエハの外周に沿って切断する工程と、
前記半導体ウエハの表面側から溝を形成し、又は前記半導体ウエハの表面若しくは裏面から半導体ウエハ内部に改質領域を形成する工程と、
前記粘着テープが表面に貼付され、かつ前記溝又は前記改質領域が形成された半導体ウエハを、裏面側から研削して、前記溝又は前記改質領域を起点として複数のチップに個片化させる工程と、
前記個片化されたチップの裏面をドライポリッシュする工程と、
前記複数のチップから前記粘着テープを剥離する工程と、
を備える半導体装置の製造方法。 - さらに、ダイシング・ダイボンディングテープを半導体チップの裏面に貼付する工程を含む、請求項5に規定の半導体装置の製造方法。
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