WO2022195957A1 - 光センサ - Google Patents
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- WO2022195957A1 WO2022195957A1 PCT/JP2021/042037 JP2021042037W WO2022195957A1 WO 2022195957 A1 WO2022195957 A1 WO 2022195957A1 JP 2021042037 W JP2021042037 W JP 2021042037W WO 2022195957 A1 WO2022195957 A1 WO 2022195957A1
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- 230000003287 optical effect Effects 0.000 title claims abstract description 64
- 239000000463 material Substances 0.000 claims abstract description 320
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 23
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 261
- 239000010408 film Substances 0.000 description 57
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 238000010521 absorption reaction Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0204—Compact construction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
Definitions
- the present disclosure relates to optical sensors. This application claims priority based on Japanese Application No. 2021-044964 filed on March 18, 2021, and incorporates all the content described in the Japanese Application.
- thermopile in which two types of materials forming a thermocouple are alternately bonded in series, and a pad electrode for wire bonding made of a material different from that of the thermocouple is connected so as to overlap the thermocouple material (for example, patent documents 1).
- a pad electrode for wire bonding made of a material different from that of the thermocouple is connected so as to overlap the thermocouple material (for example, patent documents 1).
- Patent Document 1 an intermediate layer made of a conductive material different from that of the thermocouple material and the pad electrode for wire bonding is interposed between the thermocouple material and the pad electrode for wire bonding.
- An optical sensor includes a support, a plurality of elongated first material layers composed of SiGe having a first conductivity type and configured to convert thermal energy into electrical energy, a first a plurality of elongated second material layers made of SiGe having a second conductivity type different from the first conductivity type and configured to convert thermal energy into electrical energy; and a third material layer comprising a metal.
- thermoelectric conversion material portion arranged on one main surface of the support, a heat sink arranged on the other main surface of the support, and a first material when viewed in the thickness direction of the support a light absorbing film arranged to create a temperature difference in the longitudinal direction of the layer and configured to convert received light into thermal energy; a first electrode; and a second spaced apart from the first electrode. an electrode;
- Each first material layer is disposed in contact with one major surface of the support and includes a first region including a first end and a second region longitudinally opposite the first end. and a second region that includes an end of the Each second material layer includes a third region including a third end and a fourth region including a fourth end longitudinally opposite the third end.
- the plurality of first material layers and the plurality of second material layers are alternately connected in series.
- a third material layer is disposed between the first and third regions in contact with the first and third regions, and between the second and fourth regions and between the second and fourth regions. placed in contact.
- the first region provided in the leading first material layer connected in series is electrically connected to the first electrode
- the third region provided in the last second material layer connected in series is the second electrode. is electrically connected to
- FIG. 1 is a schematic plan view of the appearance of an optical sensor according to Embodiment 1.
- FIG. 2 is a schematic plan view of the appearance of the optical sensor according to Embodiment 1.
- FIG. 3 is a schematic cross-sectional view showing a cross-section along line III--III in FIGS. 1 and 2.
- FIG. 4 is a schematic cross-sectional view showing part of the optical sensor in Embodiment 1.
- FIG. 5 is a schematic cross-sectional view showing an enlarged part of the optical sensor shown in FIG. 4.
- FIG. FIG. 6 is an EDX of a portion of the cross-section of the optical sensor shown in FIG.
- FIG. 7 is a graph showing the relationship between the elements measured by EDX in FIG. 6 and the distance.
- FIG. 8 is a graph showing the relationship between the contact resistivity in the portion where the first material layer and the second material layer are electrically connected and the thickness of the third material layer.
- FIG. 9 is a graph showing the relationship between the sensitivity D * of the optical sensor and the thickness of the third material layer.
- FIG. 10 is a graph showing the relationship between the contact resistivity in the portion where the first material layer and the second material layer are electrically connected and various metals contained in the third material layer.
- thermopile infrared sensors are required to reduce noise from the viewpoint of improving sensor sensitivity. It is difficult for the technology disclosed in Patent Literature 1 to meet such demands.
- one object is to provide an optical sensor capable of reducing noise.
- An optical sensor includes a support, and a plurality of elongated (band-like) first material layers made of SiGe having a first conductivity type and configured to convert thermal energy into electrical energy. , a plurality of elongated (strip-like) second material layers made of SiGe having a second conductivity type different from the first conductivity type and configured to convert thermal energy into electrical energy; and a metal.
- thermoelectric conversion material portion arranged on one main surface of the support; a heat sink arranged on the other main surface of the support; a light absorbing film arranged to form a temperature difference in the longitudinal direction of the first material layer and configured to convert received light into thermal energy; a first electrode; a disposed second electrode.
- Each first material layer is disposed in contact with one major surface of the support and includes a first region including a first end and a second region longitudinally opposite the first end. and a second region that includes an end of the Each second material layer includes a third region including a third end and a fourth region including a fourth end longitudinally opposite the third end.
- the plurality of first material layers and the plurality of second material layers are alternately connected in series.
- a third material layer is disposed between the first and third regions in contact with the first and third regions, and between the second and fourth regions and between the second and fourth regions. placed in contact.
- the first region provided in the leading first material layer connected in series is electrically connected to the first electrode
- the third region provided in the last second material layer connected in series is the second electrode. is electrically connected to
- thermopile-type optical sensor using a thermoelectric conversion material that converts a temperature difference (thermal energy) into electrical energy such as an infrared sensor, includes a light-receiving part such as a light-absorbing film that converts light energy into thermal energy, A thermoelectric conversion material portion (thermopile) that converts a temperature difference into electrical energy may be provided.
- a thermocouple formed by connecting a p-type thermoelectric conversion material portion and an n-type thermoelectric conversion material portion is used in the thermoelectric conversion material portion. Output is increased by alternately connecting a plurality of p-type thermoelectric conversion material portions and a plurality of n-type thermoelectric conversion material portions in series.
- the resistance in the photosensor is represented by the following equation (1).
- R is the resistance
- Rp is the resistance per pair of the p-type thermoelectric conversion material
- Rn is the resistance per pair of the n-type thermoelectric conversion material
- N is the number of pairs
- ⁇ c is the contact resistance, that is, the p-type thermoelectric conversion material
- the resistance of the portion where the portion and the n-type thermoelectric conversion material portion are electrically connected is shown. As can be understood from this formula, if the contact resistance ⁇ c can be reduced, the resistance of the optical sensor can be reduced. Also, the noise in the optical sensor is represented by the following equation (2).
- Vn Johnson noise (V)
- k Boltzmann's constant (J/K)
- T temperature (K)
- R resistance ( ⁇ )
- the Johnson noise depends on the resistance, and if the resistance can be reduced, the noise in the photosensor can be reduced.
- the inventors diligently studied how to reduce the resistance at the portion where the first material layer and the second material layer, which are thermoelectric conversion materials, contact each other. Then, when forming the second material layer after forming the first material layer, the natural oxide film formed on the surface layer of the first material layer inhibits carrier transport and increases the resistance. . Therefore, the inventors of the present invention focused on the viewpoint that the increase in resistance in the oxide film should be suppressed to improve the conductivity, and came up with the configuration of the present disclosure.
- the optical sensor of the present disclosure further includes a third material layer containing metal.
- a third material layer is disposed between the first and third regions in contact with the first and third regions, and between the second and fourth regions and between the second and fourth regions. placed in contact. By doing so, the resistance of the portion where the first material layer and the second material layer are electrically connected can be reduced. Therefore, the noise of the optical sensor can be reduced.
- the metal may be a transition metal.
- SiGe may have a nanocrystalline structure and/or an amorphous structure.
- SiGe may be polycrystalline. Such polycrystalline SiGe is also suitably used in the optical sensor of the present disclosure.
- the crystallization rate of the polycrystalline material of the present disclosure is 99% or more.
- the metal may have a melting point of 1455°C or higher.
- a metal is thermally stable and suitable as a material included in the optical sensor.
- the metals include Ni (nickel), W (tungsten), Mo (molybdenum), Ti (titanium), Au (gold), Pd (palladium), Ge (germanium), Hf (hafnium), Al ( aluminum), and alloys consisting of combinations thereof.
- the resistance of the portion where the first material layer and the second material layer are electrically connected can be more reliably lowered. Therefore, noise can be reduced more reliably.
- the metal may be any one of Ni, W, Mo, Ti, and alloys composed of combinations thereof. By doing so, it is possible to further reduce noise.
- the third material layer may include an oxide film containing 10 at % or more of metal.
- the thickness of the third material layer may be 3 nm or more and 200 nm or less.
- FIG. 1 and 2 are schematic plan views of the appearance of the optical sensor according to Embodiment 1.
- FIG. 3 is a schematic cross-sectional view showing a cross-section along line III--III in FIGS. 1 and 2.
- FIG. 4 is a schematic cross-sectional view showing part of the optical sensor in Embodiment 1.
- FIG. 4 is a schematic cross-sectional view showing an enlarged portion including a first region, a second region, a third region, and a fourth region, which will be described later.
- 5 is a schematic cross-sectional view showing an enlarged part of the optical sensor shown in FIG. 4.
- optical sensor 11a is, for example, an infrared sensor.
- the optical sensor 11a includes a support 13, a thermoelectric conversion material portion 12 arranged on one main surface 13b of the support 13, a heat sink 14, an infrared absorption film 23 as a light absorption film, and a first electrode 24. and a second electrode 25 .
- the thermoelectric conversion material portion 12 includes a plurality of first material layers 21 including first material layers 21a, 21b, 21c, and 21d, and a plurality of second material layers 22 including second material layers 22a, 22b, 22c, and 22d. ,including.
- the optical sensor 11a detects the infrared ray irradiated to the optical sensor 11a by detecting the potential difference generated between the first electrode 24 and the second electrode 25 . If the optical sensor 11a as a whole is plate-shaped, its thickness direction is represented by the Z direction.
- the support 13 is a thin film and has a rectangular shape when viewed in the thickness direction (Z direction).
- Support 13 supports thermoelectric conversion material portion 12 including multiple first material layers 21 and multiple second material layers 22 , infrared absorption film 23 , first electrode 24 , and second electrode 25 .
- Support 13 is made of, for example, a SiO 2 /SiN/SiO 2 film. That is, the support 13 has a structure in which SiO 2 , SiN and SiO 2 are laminated.
- the outer edge 14c which is the outer edge of the heat sink 14 as a whole, and the outer edge 13c of the support 13 extend continuously in the Z direction.
- the heat sink 14 includes one surface 14a and the other surface 14b spaced apart in the thickness direction of the optical sensor 11a.
- a heat sink 14 is arranged on the other main surface 13 a of the support 13 .
- the heat sink 14 is arranged such that one surface 14a of the heat sink 14 and the other main surface 13a of the support 13 are in contact with each other.
- the other surface 14b of the heat sink 14 is exposed.
- the shape of the heat sink 14 is a rectangular loop shape.
- the heat sink 14 appears in the cross-section shown in FIG. 3 by two trapezoidal shapes.
- the heat sink 14 is sufficiently thick compared to the support 13 .
- the thickness of heat sink 14 is ten times or more the thickness of support 13 .
- the heat sink 14 is a so-called substrate in this embodiment.
- the heat sink 14 is made of Si, for example.
- a recess 16 recessed in the thickness direction is formed in the optical sensor 11a.
- the support 13, specifically the other main surface 13a of the support 13 is exposed.
- An inner peripheral surface 14d of the heat sink 14 surrounding the recess 16 has a so-called tapered shape with a wide opening on the side of the surface 14b.
- Recess 16 is formed, for example, by anisotropically wet etching a flat substrate.
- inner edges 16a, 16b, 16c, and 16d of the heat sink 14, which are boundaries between the heat sink 14 and the support 13, are indicated by dashed lines in FIG.
- the inner edges 16a, 16b, 16c, 16d of the heat sink 14 have a square shape when viewed in the thickness direction of the support 13. As shown in FIG.
- the first material layer 21 is composed of SiGe having the n-type, which is the first conductivity type. That is, the first material layer 21 is made of an n-type thermoelectric conversion material, and is made of a compound semiconductor containing Si (silicon) and Ge as constituent elements.
- the first material layer 21 has an elongated shape.
- the first material layer 21 includes a first region 28a including a first end 28c, a second region 28b including a second end 28d located on the opposite side of the first end 28c in the longitudinal direction, including.
- the direction in which the line connecting the first region 28a and the second region 28b extends is the longitudinal direction of the elongated first material layer 21 .
- the first material layer 21 converts the temperature difference between the first region 28a and the second region 28b into electrical energy.
- the first material layer 21 is arranged on one major surface 13 b of the support 13 .
- the first material layer 21 is arranged in contact with one main surface 13b of the support 13 .
- the first region 28a is positioned closer to the inner edges 16a, 16b, 16c, 16d of the heat sink 14 when viewed in the thickness direction of the support 13, and the second region 28b is positioned closer to the infrared absorption film 23. are located on the side near the outer edges 23a, 23b, 23c, 23d.
- the second material layer 22 is made of SiGe having p-type conductivity different from the first conductivity type. That is, the second material layer 22 is made of a p-type thermoelectric conversion material, and is made of a compound semiconductor containing Si and Ge as constituent elements.
- the second material layer 22 has an elongated shape.
- the second material layer 22 includes a third region 29a including a third end 29c and a fourth region 29b including a fourth end 29d located on the opposite side of the third end 29c in the longitudinal direction. .
- the direction in which the line connecting the third region 29a and the fourth region 29b extends is the longitudinal direction of the elongated second material layer 22 .
- the second material layer 22 converts the temperature difference between the third region 29a and the fourth region 29b into electrical energy.
- the second material layer 22 is arranged on part of an insulating film 26 and part of the first material layer 21 which are arranged in contact with the support 13 and will be described later.
- the second material layer 22 has a third region 29a positioned closer to the inner edges 16a, 16b, 16c, and 16d of the heat sink 14 when viewed in the thickness direction of the support 13, and a fourth region 29b positioned near the inner edges 16a, 16b, 16c, and 16d of the support 13. are located on the side near the outer edges 23a, 23b, 23c, 23d.
- the plurality of first material layers 21 and the plurality of second material layers 22 are arranged on the support 13 so as to fit within the area 15 indicated by the rectangular shape of the two-dot chain line in FIG.
- the thermoelectric conversion material part 12 converts a temperature difference (thermal energy) into electrical energy using the plurality of first material layers 21 and the plurality of second material layers 22 .
- the thermoelectric conversion material portion 12 includes an insulating film 26 .
- SiO 2 is selected as the material of the insulating film 26 .
- the arrangement of the plurality of first material layers 21 and the plurality of second material layers 22 will be detailed later.
- the infrared absorption film 23 is arranged on one main surface 13 b of the support 13 , part of the first material layer 21 , part of the second material layer 22 and part of the insulating film 26 .
- the infrared absorbing film 23 is arranged to form a temperature difference in the longitudinal direction of the first material layer 21, that is, between the first region 28a and the second region 28b.
- the infrared absorbing film 23 exposes the first region 28a of the first material layer 21 and the third region 29a of the second material layer 22, and exposes the second region 28b of the first material layer 21 and the second material layer 21. It is arranged to cover the fourth region 29b of the layer 22 .
- the infrared absorbing film 23 is arranged to form a temperature difference in the longitudinal direction of the second material layer 22, that is, between the third region 29a and the fourth region 29b.
- the infrared absorbing film 23 is arranged in a region surrounded by the inner edges 16a, 16b, 16c and 16d of the heat sink 14 when viewed in the thickness direction of the support 13.
- the infrared absorption film 23 having outer edges 23a, 23b, 23c, and 23d has a square shape when viewed in the thickness direction of the support 13. As shown in FIG.
- the infrared absorbing film 23 When viewed in the thickness direction of the support 13 , the infrared absorbing film 23 has a center of a square formed by outer edges 23 a , 23 b , 23 c and 23 d of the infrared absorbing film 23 and inner edges 16 a , 16 b and 16 c of the heat sink 14 . , 16d so as to overlap the center of the square shape.
- the infrared absorption film 23 converts infrared rays into heat.
- Carbon (C) for example, is selected as the material for the infrared absorption film 23 .
- the insulating film 26 is arranged on the first material layer 21 in the portion where the first material layer 21 is arranged, and on the support 13 in the portion where the first material layer 21 is not arranged. It is arranged on one main surface 13b.
- the insulating film 26 is arranged so as not to cover the first region 28 a and the second region 28 b of the first material layer 21 .
- the second material layer 22 is arranged on part of the one main surface 13 b of the support 13 , on part of the insulating film 26 and on part of the first material layer 21 .
- the first region 28a of the first material layer 21 and the third region 29a of the second material layer 22 are electrically connected via the third material layer 31a.
- the second region 28b and the fourth region 29b of the second material layer 22 are arranged to be electrically connected via the third material layer 31b.
- the third region 29a is arranged on the first region 28a
- the fourth region 29b is arranged on the second region 28b.
- the infrared absorbing film 23 is arranged on part of the one main surface 13 b of the support 13 , part of the insulating film 26 and part of the second material layer 22 .
- the infrared absorption film 23 is arranged so as to expose the first region 28a of the first material layer 21 and the third region 29a of the second material layer 22 .
- the infrared absorption film 23 is arranged to cover the second region 28b of the first material layer 21 and the fourth region 29b of the second material layer 22 . In other words, each connecting portion where the second region 28b and the fourth region 29b are connected overlaps the infrared absorption film 23 when viewed in the thickness direction of the support 13 .
- a first region 28 a of the first material layer 21 and a third region 29 a of the second material layer 22 are not covered with the infrared absorbing film 23 . That is, the first material layer 21 and the second material layer 22 are respectively thermally connected to the infrared absorption film 23 so as to form a temperature difference in the longitudinal direction of the first material layer 21 and the second material layer 22. . It is arranged so that the heat of the infrared absorption film 23 is transferred to the second region 28b of the first material layer 21 and the fourth region 29b of the second material layer 22 . Thus, a temperature difference is formed in the longitudinal direction of the first material layer 21 and the second material layer 22 . By doing so, the optical sensor 11a that efficiently utilizes the temperature difference formed by the infrared absorption film 23 and the heat sink 14 can be obtained.
- the multiple first material layers 21 are spaced apart from each other. Except for the first material layers 21a, 21b, 21c, and 21d, the multiple first material layers 21 are arranged such that the X direction or the Y direction is the longitudinal direction. Except for the first material layers 21a, 21b, 21c, and 21d, the plurality of first material layers 21 extends from each side of the square-shaped region 15 toward the opposite side (the longitudinal direction is in the direction). are placed along the line). The first material layers 21 and the second material layers 22 are alternately electrically connected, except for the first region 28 a connected to the first electrode 24 and the third region 29 a connected to the second electrode 25 .
- first region 28a of the first material layer 21 and the third region 29a of the second material layer 22 adjacent to one of the first material layers 21 are electrically connected via the third material layer 31a. be done.
- the second region 28b of the first material layer 21 and the fourth region 29b of the second material layer 22 adjacent on the other side of the first material layer 21 are electrically connected via the third material layer 31b.
- the plurality of first material layers 21 and the plurality of second material layers 22 are connected to the first electrode 24 and the second electrode 25 except for the first region 28a and the third region 29a, the second region 28b, the fourth region 29b are electrically connected to each other and the first region 28a and third region 29a are electrically connected to each other. That is, the first material layer 21 and the second material layer 22 are paired, and the adjacent first material layer 21 and the second material layer 22 are electrically connected in series alternately in the region including the end portion. ing.
- the polarity of the voltage generated in the third region 29a including the third end 29c located on one side of the two-material layer 22 is opposite.
- a plurality of first material layers 21 and a plurality of second material layers 22 are always alternately connected.
- the first material layer 21 arranged at the head is electrically connected to the first electrode 24 in the first region 28a.
- the second material layer 22 arranged at the end is electrically connected to the second electrode 25 in the third region 29a.
- the first electrode 24 and the second electrode 25 are arranged outside the region 15 on one main surface 13 b of the support 13 .
- the first electrode 24 and the second electrode 25 are arranged apart.
- Each of the first electrode 24 and the second electrode 25 is, for example, a pad electrode.
- gold (Au), titanium (Ti), platinum (Pt), or the like is used as the material of the first electrode 24 and the second electrode 25 .
- thermoelectric conversion material portion 12 includes a third material layer 31a containing metal.
- the third material layer 31a is arranged between the first region 28a and the third region 29a and in contact with the first region 28a and the third region 29a.
- the third material layer 31a is arranged between the first region 28a and the third region 29a in the Z direction.
- thermoelectric conversion material portion 12 includes a third material layer 31b containing metal.
- the third material layer 31b is arranged between the second region 28b and the fourth region 29b so as to be in contact with the second region 28b and the fourth region 29b.
- the third material layer 31b is arranged between the second region 28b and the fourth region 29b in the Z direction.
- the metal contained in the third material layers 31a and 31b is Ni in this embodiment.
- the third material layers 31a and 31b include oxide films containing 10 at % or more of Ni.
- the third material layers 31a and 31b include oxide films containing 10 at % or more of Ni.
- the thickness T1 of the third material layer 31a is 3 nm or more and 200 nm or less (see FIG. 5).
- the thickness T1 of the third material layer 31a is indicated by the thickness T1, which is the length between one surface 32a and the other surface 33a of the third material layer 31a in the Z direction, which is the thickness direction. .
- One surface 32a of the third material layer 31a contacts one surface 34a in the thickness direction of the first material layer 21 located on the second material layer 22 side in the thickness direction.
- the other surface 33a of the third material layer 31a contacts one surface 35a in the thickness direction of the second material layer 22 located on the first material layer 21 side in the thickness direction. Since the thickness of the third material layer 31b is also the same as the thickness of the third material layer 31a, the description thereof will be omitted.
- a method for manufacturing the optical sensor 11a according to Embodiment 1 will be briefly described.
- a flat substrate is prepared, and the support 13 is formed on one main surface in the thickness direction. At this time, the substrate and the other main surface 13a of the support 13 are in contact with each other.
- a first material layer 21 is formed on one main surface 13b of the support 13. As shown in FIG.
- the specific formation of the first material layer 21 is as follows. First, on one main surface 13b of the support 13, a lift-off resist is applied in layers. Next, a layer of positive resist is applied on the lift-off resist. After that, the positive resist is subjected to photolithography, exposed, and dissolved in a developer. Next, a semiconductor material is deposited to form a pattern, and the resist is removed from the support 13 (lift-off). Thus, the above-described first material layer 21 is formed.
- the first material layer 21 After forming the first material layer 21, it is immersed in a buffered hydrofluoric acid (BHF (Buffered Hydrogen Fluoride)) solution having a concentration of 10% by mass for 1 minute, and then washed with water. After the water washing process, a natural oxide film having a thickness of about 10 nm to 20 nm is formed on the first material layer 21 . Next, after forming a pattern of Ni, which is an intermediate metal layer, a Ni film is formed to form an intermediate metal layer. Next, an insulating film 26 made of SiO 2 is formed, a pattern of the second material layer 22 is formed, and then the second material layer 22 is formed by vapor deposition. Since the formation of each layer, such as the formation of the second material layer 22, is the same procedure as the formation of the first material layer 21, the description thereof will be omitted.
- BHF buffered hydrofluoric acid
- an activation process is performed by heating at about 550°C.
- Ni which is the metal in the intermediate metal layer, diffuses into the natural oxide film with a thickness of about 10 nm to 20 nm formed on the first material layer 21 that has been washed with water.
- the third material layers 31a and 31b containing Ni are formed. That is, in this manner, the third material layer 31a arranged in contact with the first region 28a and the third region 29a between the first region 28a and the third region 29a, the second region 28b and the fourth region 29a A third material layer 31b arranged in contact with the second region 28b and the fourth region 29b is formed between the region 29b.
- a recess 16 is formed in the central region of the substrate from the other main surface of the substrate located on the side opposite to the support 13 in the thickness direction.
- a concave portion 16 is formed from the other main surface of the substrate to the other main surface 13 a of the support 13 .
- a heat sink 14 composed of the substrate is formed, and the optical sensor 11a is obtained.
- the intermediate metal layer may be provided between the first region 28 a and the first electrode 24 .
- the infrared absorption film 23 converts the light energy into heat energy.
- the infrared absorbing film 23 is formed in a region surrounded by the inner edges 16a, 16b, 16c, and 16d of the heat sink 14, and the portion where the infrared absorbing film 23 is arranged becomes the high temperature side.
- the heat sink 14 is arranged outside the inner edges 16a, 16b, 16c, 16d, the temperature does not rise.
- the second region 28b of the first material layer 21 becomes high temperature, and the first region 28a of the first material layer 21 becomes low temperature. That is, in the longitudinal direction of one first material layer 21, a temperature difference is formed between regions including both ends. This temperature difference creates a potential difference.
- the longitudinal direction of the second material layer 22 also has an elongated shape. Therefore, a temperature difference is formed between regions including both ends. This temperature difference creates a potential difference.
- the potential difference output by the first electrode 24 and the second electrode 25 can be divided into a plurality of It is the total potential difference caused by the temperature difference between the first material layer 21 and the plurality of second material layers 22 .
- the photosensor 11a detects light, in this case infrared rays.
- the optical sensor 11a includes the third material layers 31a and 31b configured as described above. Therefore, the resistance in the optical sensor 11a can be reduced. Therefore, the noise of the optical sensor 11a can be reduced.
- FIG. 6 is a diagram showing EDX of a part of the cross section of the optical sensor 11a shown in FIG.
- the left area 36a shows the concentration of the element Ni
- the right area 36b shows the concentration of the element O (oxygen).
- FIG. 7 is a graph showing the relationship between the elements measured by EDX in FIG. 6 and the distance.
- the horizontal axis indicates the element concentration (at %)
- the vertical axis indicates the distance (nm).
- the distance is the distance from the main surface 13b in the Z direction.
- JEM-2100F manufactured by JEOL Ltd.
- the acceleration voltage was set to 200 kV.
- the electron probe diameter was set to 0.2 nm
- the number of pixels was set to 256 pixels ⁇ 256 pixels
- the Dwell time was set to 0.5 ms/pixel
- the number of times of integration was set to 15 as EDX mapping conditions.
- the concentration of Si decreases as the distance increases, and sharply decreases from 150 nm.
- the concentration of Ge increases as the distance increases, and rapidly increases from 150 nm.
- the concentration of Ni is 10 at % or more in the distance from 120 nm to 180 nm.
- the concentration of O also increases and reaches a peak in the distance from 120 nm to 180 nm. 6 and 7, it can be understood that a third material layer 31a containing metal is arranged on one surface 34a of the first material layer 21.
- FIG. The thickness T1 of the third material layer 31a in this embodiment is 60 nm.
- the rate of decrease in resistance at the portion electrically connected to the layer 22 is 99%. Also, compared to the resistance of a photosensor that does not include the third material layers 31a, 31b, the reduction in resistance of such a photosensor 11a of the present disclosure is 38%. Moreover, compared to the Johnson noise of a photosensor that does not include the third material layers 31a, 31b, the Johnson noise reduction of such a photosensor 11a of the present disclosure is 22%.
- FIG. 8 is a graph showing the relationship between the resistance at the portion where the first material layer 21 and the second material layer 22 are electrically connected and the thickness of the third material layers 31a and 31b.
- the horizontal axis indicates the thickness (nm) of the third material layers 31a and 31b
- the vertical axis indicates the contact resistivity at the portion where the first material layer 21 and the second material layer 22 are electrically connected. (m ⁇ cm 2 ).
- FIG. 9 is a graph showing the relationship between the sensitivity D * of the optical sensor and the thickness of the third material layers 31a and 31b.
- the horizontal axis indicates the thickness (nm) of the third material layers 31a and 31b
- the vertical axis indicates the sensitivity D * (cm ⁇ Hz 0.5 /W).
- the metal can be sufficiently diffused into the oxide film, and the resistance can be set to a suitable value. can be done. Therefore, the sensitivity can be further improved.
- Ni is used as the metal contained in the third material layers 31a and 31b.
- SiGe may have a nanocrystalline structure and/or an amorphous structure.
- SiGe which is a constituent material of the first material layer 21 and the second material layer 22
- SiGe having an amorphous structure is heat-treated at a temperature of, for example, about 500° C., and a part of the SiGe is formed into a nanocrystalline structure. good too.
- SiGe may also have a nanocrystalline or amorphous structure.
- the nanocrystalline structure is a structure partially having nano-sized crystal grains (nanocrystals) in SiGe. Inside the nanocrystal, the atoms are regularly arranged. SiGe may also be polycrystalline. Such polycrystalline SiGe is also suitably used in the optical sensor of the present disclosure.
- the crystallization rate of the polycrystalline material of the present disclosure is 99% or more.
- the measurement of the crystallization rate was performed as follows. HORIBA LabRam HR-PL was used as an apparatus. The measurement conditions were a laser wavelength of 532 nm and a laser power of 2.5 mW. As for the analysis conditions, the peak near 400 cm ⁇ 1 was analyzed. In the analysis, Gaussian function and pseudo Voigt function were fitted.
- the Gaussian function G(x) is represented by the following formula (3).
- Equation 4 the pseudo Voigt function F(x) is represented by the formula shown in Equation 4 below.
- Gaussian function G(x) In the variables A g , W g and x g , the initial value of x 0 was set to 400 cm ⁇ 1 .
- Each parameter was optimized by the method of least squares, and the area was obtained by integrating the pseudo Voigt function and the Gaussian function. Regarding the crystallization rate, the area derived using the Gaussian function corresponds to amorphous, and the area derived using the pseudo-Vogt function corresponds to crystal. area/(area derived using pseudo Voigt function + area derived using Gaussian function).
- the melting point of the metal contained in the third material layers 31a and 31b may be 1455° C. or higher.
- Such a metal is thermally stable and suitable as a material included in the optical sensor 11a.
- FIG. 10 is a graph showing the relationship between the contact resistivity at the portion where the first material layer 21 and the second material layer 22 are electrically connected and various metals contained in the third material layer.
- the horizontal axis indicates various metals
- the vertical axis indicates the contact resistivity (m ⁇ cm 2 ) at the portion where the first material layer 21 and the second material layer 22 are electrically connected.
- the contact resistivity is 400 (m ⁇ cm 2 ).
- the contact resistivity is 0.6 (m ⁇ cm 2 ).
- the contact resistivity is 1.0 (m ⁇ cm 2 ).
- the contact resistivity is 1.5 (m ⁇ cm 2 ).
- the contact resistivity is 2.0 (m ⁇ cm 2 ).
- the contact resistivity is 24 (m ⁇ cm 2 ).
- the contact resistivity is 55 (m ⁇ cm 2 ). In the case of including the third material layer in which the metal is Ge, the contact resistivity is 60 (m ⁇ cm 2 ). In the case of including the third material layer in which the metal is Hf, the contact resistivity is 70 (m ⁇ cm 2 ). In the case of including the third material layer in which the metal is Al, the contact resistivity is 200 (m ⁇ cm 2 ).
- the metal contained in the third material layers 31a and 31b it is preferable to select one of Ni, W, Mo, Ti, Au, Pd, Ge, Hf, Al, and alloys composed of combinations thereof. be. Such an element can more reliably lower the resistance in the portion where the first material layer 21 and the second material layer 22 are electrically connected. Therefore, noise can be reduced more reliably.
- noise can be further reduced by adopting any one of Ni, W, Mo, Ti, and an alloy made of a combination thereof as the metal contained in the third material layers 31a and 31b. .
- the n-type thermoelectric conversion material is used for the first material layer with the first conductivity type being n-type, and the conductivity type different from the first conductivity type is p-type for the second material layer.
- the conductivity type different from the first conductivity type is p-type for the second material layer.
- An n-type thermoelectric conversion material may be employed for the second material layer with the type being n-type.
- the oxide film formed on the first material layer 21 after the water washing process described above preferably has a thickness of about 0.1 nm to 10 nm from the viewpoint of increasing the Seebeck coefficient. .
- the heat sink has a rectangular loop shape, but it is not limited to this.
- a heat sink may be formed in a lattice shape when viewed in the thickness direction of the support, and a plurality of rectangular supports may be arranged in regions corresponding to so-called windows of the lattice heat sink.
- a configuration may be adopted in which a plurality of thin rectangular support members are arranged at intervals, and a heat sink is arranged in a region between the support members. By doing so, it is also possible to reduce noise.
- Such a configuration is used, for example, when an optical sensor is used as an array sensor.
- the third area is arranged on the first area
- the fourth area is arranged on the second area.
- the region and the second region and the fourth region may be arranged adjacent to each other when viewed in the thickness direction of the support. That is, the third material layer is arranged between the first region and the third region which are arranged adjacent to each other when viewed in the thickness direction of the support so as to be in contact with each of the first region and the third region.
- a third material layer may be arranged between the second region and the fourth region arranged adjacent to each other so as to be in contact with the second region and the fourth region.
- thermoelectric conversion material portion 13 supports 13a, 13b main surfaces 13c, 14c, 23a, 23b, 23c, 23d outer edge 14 heat sinks 14a, 14b, 32a, 33a, 34a, 35a surface 14d inner peripheral surface 15, 36a, 36b region 16 recesses 16a, 16b, 16c, 16d inner edges 21, 21a, 21b, 21c, 21d first material layers 22, 22a, 22b, 22c, 22d second material layer 23 infrared absorbing film (light absorbing film), 24 first electrode 25 second electrode 26 insulating film 28a first region 28b second region 28c first end 28d second end 29a third region 29b fourth region 29c second region 3 end, 29d fourth end 31a, 31b third material layer T 1 thickness, D * sensitivity X, Y, Z directions
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Abstract
Description
サーモパイル型の赤外線センサのような光センサにおいては、センサの感度の向上の観点からノイズの低減が求められる。特許文献1に開示の技術では、このような要望に応じることは困難である。
[本開示の効果]
最初に本開示の実施態様を列記して説明する。本開示に係る光センサは、支持体と、第1の導電型を有するSiGeから構成され、熱エネルギーを電気エネルギーに変換するように構成された細長形状(帯状)の複数の第1材料層と、第1の導電型と異なる第2の導電型を有するSiGeから構成され、熱エネルギーを電気エネルギーに変換するように構成された細長形状(帯状)の複数の第2材料層と、金属を含む第3材料層と、を含み、支持体の一方の主面上に配置される熱電変換材料部と、支持体の他方の主面上に配置されるヒートシンクと、支持体の厚さ方向に見て、第1材料層の長手方向に温度差を形成するよう配置され、受けた光を熱エネルギーに変換するように構成された光吸収膜と、第1電極と、第1電極と隔離して配置される第2電極と、を備える。それぞれの第1材料層は、支持体の一方の主面と接触して配置され、第1の端部を含む第1領域と、長手方向において第1の端部の反対側に位置する第2の端部を含む第2領域と、を含む。それぞれの第2材料層は、第3の端部を含む第3領域と、長手方向において第3の端部の反対側に位置する第4の端部を含む第4領域と、を含む。第1領域と第3領域とが電気的に接続され、第2領域と第4領域とが電気的に接続されることで、複数の第1材料層と複数の第2材料層は交互に直列に接続される。第3材料層は、第1領域と第3領域との間において第1領域および第3領域と接触して配置され、第2領域と第4領域との間において第2領域および第4領域と接触して配置される。直列に接続される先頭の第1材料層に設けられる第1領域は第1電極と電気的に接続され、直列に接続される最後尾の第2材料層に設けられる第3領域は第2電極と電気的に接続される。
次に、本開示の光センサの一実施形態を、図面を参照しつつ説明する。以下の図面において同一または相当する部分には同一の参照符号を付しその説明は繰り返さない。
本開示の実施の形態1に係る光センサについて説明する。図1および図2は、実施の形態1における光センサの外観の概略平面図である。理解の容易の観点から、図1では、後述する赤外線吸収膜および絶縁膜の図示を省略している。図1において、赤外線吸収膜が配置される際の外縁は、破線で示されている。図3は、図1および図2の線分III-IIIに沿う断面を示す概略断面図である。図4は、実施の形態1における光センサの一部を示す概略断面図である。図4は、後述する第1領域、第2領域、第3領域および第4領域を含む部分を拡大して示す概略断面図である。図5は、図4に示す光センサの一部を拡大して示す概略断面図である。
赤外線吸収膜23は、第1材料層21の第2領域28bおよび第2材料層22の第4領域29bを覆うように配置される。すなわち、第2領域28bと第4領域29bとが接続される各接続部は、支持体13の厚さ方向に見て赤外線吸収膜23と重なっている。第1材料層21の第1領域28aおよび第2材料層22の第3領域29aは、赤外線吸収膜23によって覆われていない。すなわち、第1材料層21および第2材料層22はそれぞれ、第1材料層21および第2材料層22のそれぞれの長手方向に温度差を形成するよう赤外線吸収膜23と熱的に接続される。赤外線吸収膜23の熱が第1材料層21の第2領域28bおよび第2材料層22の第4領域29bに伝達されるように配置される。このようにして、第1材料層21および第2材料層22の長手方向に温度差が形成される。このようにすることにより、赤外線吸収膜23とヒートシンク14により形成される温度差を効率的に利用した光センサ11aを得ることができる。
第3材料層31aの厚さT1については、厚さ方向であるZ方向において、第3材料層31aの一方の面32aと他方の面33aとの長さである厚さT1で示される。第3材料層31aの一方の面32aは、厚さ方向において第2材料層22側に位置する第1材料層21の厚さ方向の一方の面34aと接触する。第3材料層31aの他方の面33aは、厚さ方向において第1材料層21側に位置する第2材料層22の厚さ方向の一方の面35aと接触する。なお、第3材料層31bの厚さも、第3材料層31aの厚さと同等であるため、その説明を省略する。
なお、上記の実施の形態においては、第1の導電型をn型として第1材料層にn型熱電変換材料を採用し、第1の導電型と異なる導電型をp型として第2材料層にp型熱電変換材料を採用することとしたが、これに限らず、第1の導電型をp型として第1材料層にp型熱電変換材料を採用し、第1の導電型と異なる導電型をn型として第2材料層にn型熱電変換材料を採用することにしてもよい。
13a,13b 主面
13c,14c,23a,23b,23c,23d 外縁
14 ヒートシンク
14a,14b,32a,33a,34a,35a 面
14d 内周面
15,36a,36b 領域
16 凹部
16a,16b,16c,16d 内縁
21,21a,21b,21c,21d 第1材料層
22,22a,22b,22c,22d 第2材料層
23 赤外線吸収膜(光吸収膜)、24 第1電極、25 第2電極、26 絶縁膜、28a 第1領域、28b 第2領域、28c 第1の端部、28d 第2の端部、29a 第3領域、29b 第4領域、29c 第3の端部、29d 第4の端部
31a,31b 第3材料層
T1 厚さ、D* 感度
X,Y,Z 方向
Claims (9)
- 光センサであって、
支持体と、
第1の導電型を有するSiGeから構成され、熱エネルギーを電気エネルギーに変換するように構成された細長形状の複数の第1材料層と、第1の導電型と異なる第2の導電型を有するSiGeから構成され、熱エネルギーを電気エネルギーに変換するように構成された細長形状の複数の第2材料層と、金属を含む第3材料層と、を含み、前記支持体の一方の主面上に配置される熱電変換材料部と、
前記支持体の他方の主面上に配置されるヒートシンクと、
前記支持体の厚さ方向に見て、前記第1材料層の長手方向に温度差を形成するように配置され、受けた光を熱エネルギーに変換するように構成された光吸収膜と、
第1電極と、前記第1電極と隔離して配置される第2電極と、を備え、
それぞれの前記第1材料層は、
前記支持体の一方の主面と接触して配置され、
第1の端部を含む第1領域と、長手方向において第1の端部の反対側に位置する第2の端部を含む第2領域と、を含み、
それぞれの前記第2材料層は、
第3の端部を含む第3領域と、長手方向において第3の端部の反対側に位置する第4の端部を含む第4領域と、を含み、
前記第1領域と前記第3領域とが電気的に接続され、前記第2領域と前記第4領域とが電気的に接続されることで、前記複数の第1材料層と前記複数の第2材料層は交互に直列に接続され、
前記第3材料層は、前記第1領域と前記第3領域との間において前記第1領域および前記第3領域と接触して配置され、前記第2領域と前記第4領域との間において前記第2領域および前記第4領域と接触して配置され、
直列に接続される先頭の前記第1材料層に設けられる前記第1領域は前記第1電極と電気的に接続され、直列に接続される最後尾の前記第2材料層に設けられる前記第3領域は前記第2電極と電気的に接続される、光センサ。 - 前記金属は、遷移金属であり、
前記SiGeは、ナノ結晶構造およびアモルファス構造のうちの少なくともいずれかを有する、請求項1に記載の光センサ。 - 前記SiGeは、多結晶体である、請求項1に記載の光センサ。
- 前記金属の融点は、1455℃以上である、請求項1から請求項3のいずれか1項に記載の光センサ。
- 前記金属は、Ni、W、Mo、Ti、Au、Pd、Ge、Hf、Al、およびそれらの組み合わせからなる合金のうちのいずれかである、請求項1に記載の光センサ。
- 前記金属は、Ni、W、Mo、Ti、およびそれらの組み合わせからなる合金のうちのいずれかである、請求項5に記載の光センサ。
- 前記第3材料層は、前記金属を10at%以上含む酸化膜を含む、請求項1から請求項6のいずれか1項に記載の光センサ。
- 前記第3材料層の厚さは、3nm以上200nm以下である、請求項1から請求項7のいずれか1項に記載の光センサ。
- 前記第1の導電型はn型であり、前記第2の導電型はp型である、請求項1から請求項8のいずれか1項に記載の光センサ。
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Citations (6)
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JP2884679B2 (ja) * | 1990-03-27 | 1999-04-19 | 日本電気株式会社 | サーモパイル型赤外線センサ |
US20080271772A1 (en) * | 2007-03-29 | 2008-11-06 | Stichting Imec Nederland | Method for Manufacturing a Thermopile on a Membrane and a Membrane-less Thermopile, the Thermopile thus Obtained and a Thermoelectric Generator Comprising Such Thermopiles |
JP2009210289A (ja) * | 2008-02-29 | 2009-09-17 | Panasonic Electric Works Co Ltd | 赤外線検出システム |
US20110155202A1 (en) * | 2008-09-18 | 2011-06-30 | University Of Florida Research Foundation, Inc. | Miniature Thermoelectric Power Generator |
JP2018537848A (ja) * | 2015-10-23 | 2018-12-20 | コンソルツィオ デルタ ティ リサーチ | 熱電発電器 |
WO2021002221A1 (ja) * | 2019-07-03 | 2021-01-07 | 住友電気工業株式会社 | 熱電変換材料、熱電変換素子、熱電変換モジュールおよび光センサ |
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JP2884679B2 (ja) * | 1990-03-27 | 1999-04-19 | 日本電気株式会社 | サーモパイル型赤外線センサ |
US20080271772A1 (en) * | 2007-03-29 | 2008-11-06 | Stichting Imec Nederland | Method for Manufacturing a Thermopile on a Membrane and a Membrane-less Thermopile, the Thermopile thus Obtained and a Thermoelectric Generator Comprising Such Thermopiles |
JP2009210289A (ja) * | 2008-02-29 | 2009-09-17 | Panasonic Electric Works Co Ltd | 赤外線検出システム |
US20110155202A1 (en) * | 2008-09-18 | 2011-06-30 | University Of Florida Research Foundation, Inc. | Miniature Thermoelectric Power Generator |
JP2018537848A (ja) * | 2015-10-23 | 2018-12-20 | コンソルツィオ デルタ ティ リサーチ | 熱電発電器 |
WO2021002221A1 (ja) * | 2019-07-03 | 2021-01-07 | 住友電気工業株式会社 | 熱電変換材料、熱電変換素子、熱電変換モジュールおよび光センサ |
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