WO2022190921A1 - 真空処理装置および傾き調整方法 - Google Patents
真空処理装置および傾き調整方法 Download PDFInfo
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- WO2022190921A1 WO2022190921A1 PCT/JP2022/008163 JP2022008163W WO2022190921A1 WO 2022190921 A1 WO2022190921 A1 WO 2022190921A1 JP 2022008163 W JP2022008163 W JP 2022008163W WO 2022190921 A1 WO2022190921 A1 WO 2022190921A1
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- Prior art keywords
- stage
- distance
- distance measuring
- upper wall
- processing container
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- 238000012545 processing Methods 0.000 title claims abstract description 185
- 238000000034 method Methods 0.000 title description 22
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 238000005259 measurement Methods 0.000 claims abstract description 33
- 230000008859 change Effects 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims description 22
- 239000007789 gas Substances 0.000 description 32
- 230000007246 mechanism Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
- G05B19/4155—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by programme execution, i.e. part programme or machine function execution, e.g. selection of a programme
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/50—Machine tool, machine tool null till machine tool work handling
- G05B2219/50156—Tiltable rotary table
Definitions
- the present disclosure relates to a vacuum processing apparatus and a tilt adjustment method.
- Patent Document 1 discloses a structure in which an adjustment plate for adjusting the inclination of a mounting table on which a substrate is placed is arranged below the bottom of a processing container, and the bottom of the processing container and the adjustment plate are fastened with bolts. is disclosed.
- the present disclosure provides a vacuum processing apparatus and tilt adjustment method capable of suppressing the tilt of the stage with respect to the upper wall of the processing container.
- One aspect of the present disclosure is a vacuum processing apparatus including a processing container, a stage, a support member, an inclination changing section, a distance measuring section, and a control section.
- the processing container has a top wall, a bottom wall, and side walls, and is capable of maintaining a vacuum atmosphere inside.
- a stage is provided in the processing container, and a substrate is placed thereon. Also, the stage holds the substrate so as to face the upper wall.
- the support member penetrates the bottom wall of the processing container and supports the stage from below.
- the tilt changer is provided at the end of the support member located outside the processing container, and changes the tilt of the stage with respect to the upper wall of the processing container.
- the distance measuring unit measures the distance between the upper wall and the stage at a measurement position on the surface of the upper wall facing the stage. Based on the distance between the upper wall and the stage measured by the distance measuring section, the control section controls the tilt changing section so that the upper wall and the stage become parallel.
- FIG. 1 is a schematic cross-sectional view showing an example of the configuration of a vacuum processing apparatus according to one embodiment.
- FIG. 2 is a plan view showing an example of a stage.
- FIG. 3 is an enlarged cross-sectional view showing an example of the structure of the absorbing mechanism.
- FIG. 4 is a flowchart illustrating an example of a tilt adjustment method according to one embodiment.
- FIG. 5 is a plan view showing an example of the stage in a state in which the optical axis of the laser beam passes through the through-hole of the stage.
- FIG. 6 is a plan view showing an example of the stage in a state where the stage is angled to block the laser light.
- FIG. 7 is a schematic cross-sectional view showing an example of a vacuum processing apparatus in which the stage is angled to block laser light.
- FIG. 8 is a plan view showing another example of the stage.
- FIG. 9 is a plan view showing another example of the stage.
- FIG. 10 is a plan view showing another example of the stage.
- the present disclosure provides a technology capable of suppressing the tilt of the stage with respect to the upper wall.
- FIG. 1 is a schematic cross-sectional view showing an example of the configuration of a vacuum processing apparatus 100 according to one embodiment.
- a vacuum processing apparatus 100 illustrated in FIG. 1 is an apparatus that performs film formation in a vacuum atmosphere.
- the vacuum processing apparatus 100 shown in FIG. 1 is an apparatus that performs CVD (Chemical Vapor Deposition) processing on a substrate W using plasma.
- CVD Chemical Vapor Deposition
- the vacuum processing apparatus 100 includes a processing container 1 formed in a substantially cylindrical shape from metal such as aluminum or nickel with an anodized film formed on the surface thereof.
- the processing vessel 1 has a bottom wall 1b and side walls 1f.
- the processing container 1 is grounded.
- the processing container 1 is configured to be airtight so that the inside can be maintained in a vacuum atmosphere.
- a side wall 1f of the processing vessel 1 is formed with an opening 1a for loading and unloading the substrate W. As shown in FIG.
- a gate valve G opens and closes the opening 1a.
- the bottom wall 1b of the processing vessel 1 is provided with a window 1e made of a material such as quartz that transmits light.
- a stage 2 is provided inside the processing container 1 .
- the stage 2 is made of metal such as aluminum or nickel, or aluminum nitride (AlN) in which a metal mesh electrode is embedded, and is formed in a flat, substantially cylindrical shape.
- a substrate W to be processed such as a semiconductor wafer, is placed on the upper surface of the stage 2 .
- the lower surface of the stage 2 in the area outside the area of the stage 2 on which the substrate W is placed is formed so as to be parallel to the upper surface of the stage 2 on which the substrate W is placed.
- Stage 2 also functions as a lower electrode.
- the stage 2 is supported from below by a support member 2a.
- An opening 1c is formed in the bottom wall 1b of the processing container 1 below the stage 2 .
- the support member 2 a is formed in a substantially cylindrical shape, extends vertically downward from the stage 2 , and penetrates the opening 1 c of the bottom wall 1 b of the processing container 1 .
- the opening 1c is formed with a diameter larger than the diameter of the support member 2a.
- a heater 2b is built into the stage 2.
- the heater 2 b generates heat according to the power supplied from the outside of the processing chamber 1 and heats the substrate W placed on the stage 2 .
- the stage 2 is provided with a flow path through which a coolant whose temperature is controlled by a chiller unit provided outside the processing vessel 1 is supplied.
- the stage 2 can control the substrate W to a predetermined temperature by heating by the heater 2b and cooling by the coolant supplied from the chiller unit. Note that the stage 2 may not be provided with the heater 2b, and the temperature of the substrate W may be controlled by the coolant supplied from the chiller unit.
- an electrode is embedded inside the stage 2 to generate an electrostatic force by a voltage supplied from the outside.
- the substrate W is attracted and held on the upper surface of the stage 2 by the electrostatic force generated from this electrode.
- the stage 2 is provided with elevating pins for transferring the substrate W to and from a transport mechanism (not shown) provided outside the processing container 1 .
- the stage 2 is formed with a plurality of through holes 20 as shown in FIGS. 1 and 2, for example.
- FIG. 2 is a plan view showing an example of the stage 2. As shown in FIG. Each through-hole 20 is provided on the outer peripheral side of the stage 2 from the area 2e on the stage 2 on which the substrate W is placed. Further, in the present embodiment, the plurality of through holes 20 are arranged along the outer circumference of the stage 2 so as to be evenly spaced. Each through-hole 20 is arranged, for example, so that the angle formed by the line segment connecting the center O of the stage 2 and each through-hole 20 is 120°.
- a shower head 3 made of a conductive metal such as aluminum or nickel and having a substantially disk shape.
- a space between the lower surface of the shower head 3 and the upper surface of the stage 2 is a processing space in which film formation processing is performed.
- the shower head 3 is supported above the stage 2 via an insulating member 1d such as ceramics. Thereby, the processing container 1 and the shower head 3 are electrically insulated.
- the shower head 3 constitutes the ceiling portion of the processing container 1 .
- showerhead 3 is an example of an upper wall.
- the shower head 3 has a top plate 3a and a shower plate 3b.
- the top plate 3a is provided so as to block the inside of the processing container 1 from above.
- the shower plate 3b is provided below the top plate 3a so as to face the stage 2.
- a gas diffusion chamber 3c is formed in the top plate 3a.
- a plurality of gas discharge holes 3d communicating with the gas diffusion chamber 3c are formed in the top plate 3a and the shower plate 3b.
- a gas introduction port 3e for introducing gas into the gas diffusion chamber 3c is formed in the top plate 3a.
- a gas supply unit 35 is connected through a pipe 36 to the gas inlet 3e.
- the gas supply unit 35 has gas supply sources for various gases used in the film forming process, and gas supply lines connected to the respective gas supply sources.
- Each gas supply line is provided with a control device for controlling gas flow, such as a valve and a flow controller.
- the gas supply unit 35 supplies various gases, the flow rate of which is controlled by a control device provided on each gas supply line, to the shower head 3 through a pipe 36 .
- the gas supplied to the showerhead 3 diffuses in the gas diffusion chamber 3c and is discharged into the processing space below the showerhead 3 from each gas discharge hole 3d.
- the shower plate 3b is paired with the stage 2 and functions as an electrode plate for forming a capacitively coupled plasma (CCP) in the processing space.
- An RF (Radio Frequency) power supply 30 is connected to the shower head 3 via a matching device 31 .
- An RF power supply 30 supplies RF power to the showerhead 3 via a matching device 31 .
- the RF power supplied from the RF power supply 30 to the showerhead 3 is supplied from the lower surface of the showerhead 3 into the processing space.
- the gas supplied into the processing space is plasmatized by the RF power supplied into the processing space.
- the RF power supply 30 may supply RF power to the stage 2 instead of the showerhead 3 . In this case, the showerhead 3 is grounded.
- RF power supply 30 may provide RF power of different frequencies and magnitudes to both stage 2 and showerhead 3 .
- a lower end portion 2d of the support member 2a that supports the stage 2 is positioned outside the processing container 1 and connected to the rotating portion 8.
- the rotating part 8 has a rotating shaft 80 , a vacuum seal 81 and a motor 82 .
- a lower end portion 2 d of the support member 2 a is connected to the upper end of the rotating shaft 80 .
- the rotary shaft 80 rotates about an axis passing through the center O of the stage 2 integrally with the support member 2a.
- a slip ring 83 is provided at the lower end of the rotating shaft 80 .
- the slip ring 83 has electrodes and is electrically connected to various wirings for supplying power to components inside the stage 2 .
- the slip ring 83 is electrically connected to wiring for supplying power to the heater 2 b embedded in the stage 2 . Further, for example, the slip ring 83 is electrically connected to wiring for applying a voltage to electrodes for attracting the substrate W onto the stage 2 by electrostatic force.
- the motor 82 rotates the rotating shaft 80 .
- the rotation of the rotary shaft 80 causes the stage 2 to rotate via the support member 2a.
- the slip ring 83 also rotates together with the rotating shaft 80, but the electrical connection between the slip ring 83 and the wiring is maintained.
- the vacuum seal 81 is, for example, a magnetic fluid seal and is provided around the rotating shaft 80 .
- the vacuum seal 81 can maintain smooth rotation of the rotating shaft 80 while hermetically sealing the rotating shaft 80 .
- the elevating mechanism elevates the stage 2 between the processing position and the transfer position by elevating the support member 2a.
- the tilt changer 7 is connected to the lower end 2d of the support member 2a via a vacuum seal 81.
- the inclination changing section 7 has an absorbing mechanism 70 , a bellows 71 , a plurality of (eg, six) actuators 72 , and a base member 73 .
- the bellows 71 is provided so as to surround the support member 2a.
- the upper end of the bellows 71 is connected to the bottom wall 1b of the processing container 1 through an opening 70a formed in the absorbing mechanism 70, and the lower end of the bellows 71 is connected to the base member 73.
- the bellows 71 hermetically seals the space between the bottom wall 1 b of the processing vessel 1 and the base member 73 .
- the bellows 71 can expand and contract according to movement of the base member 73 .
- the base member 73 is connected via a vacuum seal 81 to the lower end portion 2d of the support member 2a located outside the processing container 1, and can move integrally with the support member 2a and the stage 2.
- the base member 73 is formed with an opening 73a having a diameter larger than the diameter of the lower end portion 2d of the support member 2a.
- the support member 2a passes through the opening 73a, and the lower end portion 2d of the support member 2a is connected to the rotating shaft 80.
- the vacuum seal 81 is provided around a rotating shaft 80 connected to the lower end portion 2d of the support member 2a, and the base member 73 is fixed to the upper surface of the vacuum seal 81.
- the base member 73 is connected to the stage 2 via the vacuum seal 81, the rotating shaft 80, and the support member 2a, and can move together with the stage 2.
- a plurality of actuators 72 are provided in parallel between the bottom wall 1b of the processing container 1 and the base member 73, and change the inclination of the base member 73 relative to the bottom wall 1b of the processing container 1. Thus, the tilt of the stage 2 can be changed.
- the plurality of actuators 72 may change the position of the base member 73 relative to the bottom wall 1b of the processing container 1 .
- the plurality of actuators 72 are extendable and slidably connected to the base member 73 via universal joints, and are rotatably slidable on the bottom wall 1b side of the processing container 1 via the universal joints. Concatenated.
- the plurality of actuators 72 and the base member 73 move the base member 73, for example, in the directions of the X, Y, and Z axes shown in FIG. 1 and in the directions of rotation about the X, Y, and Z axes.
- Each forms a movable parallel link mechanism.
- a movement coordinate system of the parallel link mechanism formed by the plurality of actuators 72 and the base member 73 is adjusted in advance so as to match the coordinate system of the processing container 1 .
- the plurality of actuators 72 can move the base member 73 relative to the bottom wall 1 b of the processing container 1 . It becomes possible. Thereby, the tilt of the stage 2 can be adjusted.
- the plurality of actuators 72 rotate the base member 73 in a predetermined direction (for example, at least one direction of rotation about the X-axis and the Y-axis in FIG. 1) with respect to the bottom wall 1b of the processing container 1.
- a predetermined direction for example, at least one direction of rotation about the X-axis and the Y-axis in FIG. 1
- the tilt of the stage 2 can be changed.
- the absorption mechanism 70 is formed with an opening 70 a that communicates with the inside of the processing container 1 through the opening 1 c of the bottom wall 1 b of the processing container 1 .
- a plurality of actuators 72 are connected to the absorption mechanism 70 without being connected to the bottom wall 1b of the processing container 1 .
- the absorbing mechanism 70 is provided on the bottom wall 1 b of the processing container 1 and absorbs deformation of the bottom wall 1 b of the processing container 1 .
- FIG. 3 is an enlarged sectional view showing an example of the structure of the absorbing mechanism 70. As shown in FIG.
- the absorption mechanism 70 has a plate member 700 and a link member 701 .
- the plate member 700 is formed in a plate-like and annular shape and is arranged below the bottom wall 1 b of the processing container 1 .
- the plate member 700 is spaced apart from the bottom wall 1 b of the processing container 1 from the viewpoint of blocking the transmission of heat and vibration from the processing container 1 .
- the link member 701 has one end rotatably slidably connected to the bottom wall 1b of the processing container 1 and the other end rotatably slidably connected to the plate member 700 .
- the bottom wall 1b of the processing container 1 is formed with a recess 1b1, and the recess 1b1 is provided with a spherical bearing 1b2.
- a spherical protrusion 702 is formed at one end of the link member 701 .
- a recess 703 is formed on the upper surface of the plate member 700 at a position corresponding to the recess 1 b 1 of the processing vessel 1 .
- a spherical bearing 704 is provided in the recess 703 .
- a spherical projection 705 is formed at the other end of the link member 701 .
- Link member 701 is rotatably slidably connected to plate member 700 via convex portion 705 and spherical bearing 704 by connecting convex portion 705 to spherical bearing 704 .
- the link member 701 rotates in a direction corresponding to the deformation of the bottom wall 1b of the processing container 1, thereby suppressing transmission of the deformation to the plate member 700.
- the link member 701 receives stress due to the deformation of the bottom wall 1b, but rotates together with the bottom wall 1b in the direction of the arrow in FIG. This suppresses transmission of stress to the plate member 700 due to deformation of the bottom wall 1b.
- a plurality of actuators 72 are connected to the plate member 700 .
- the stress due to the deformation of the bottom wall 1b of the processing container 1 is not transmitted to the plurality of actuators 72 via the plate member 700, and the deterioration of the adjustment accuracy of the position and tilt of the stage 2 can be suppressed.
- a plurality of link members 701 are arranged along the extending direction of the plate member 700 .
- three link members 701 are provided at approximately equal intervals along the extending direction of the plate member 700 .
- four or more link members 701 may be provided at approximately equal intervals along the extending direction of the plate member 700 .
- the distance measuring section 9 is fixed to the plate member 700 .
- the distance measuring unit 9 has a light emitting unit and a light receiving unit, the light emitting unit irradiating an object with light (for example, laser light), and the light receiving unit receiving light reflected from the object.
- the distance measuring unit 9 measures the distance between the distance measuring unit 9 and the object based on the light emitted by the light emitting unit and the light received by the light receiving unit.
- the distance measuring unit 9 measures the distance between the distance measuring unit 9 and the object based on the phase difference between the light emitted by the light emitting unit and the light received by the light receiving unit.
- the distance measuring unit 9 outputs information such as the timing of the emitted light and the received light to the control unit 102 , and based on the information received from the distance measuring unit 9 , the control unit 102 detects the distance measuring unit 9 and the object. You can measure the distance between
- the multiple distance measuring units 9 are fixed to the plate member 700 . Since stress due to deformation of the bottom wall 1 b of the processing container 1 is reduced by the absorbing mechanism 70 , the stress due to deformation of the bottom wall 1 b of the processing container 1 is less likely to be transmitted to the plate member 700 . Therefore, even when the bottom wall 1b of the processing container 1 is deformed, the distance measurement accuracy of the distance measuring unit 9 can be maintained at a high level.
- the plate member 700 is provided with three distance measuring units 9 along the extending direction of the plate member 700 .
- the three distance measuring units 9 are arranged such that the optical axis La of each laser beam is at a position a predetermined distance away from a line passing through the center O of the stage 2 and parallel to the Z axis.
- the predetermined distance is the distance from the center O of the stage 2 to the center of each through hole 20 (see FIG. 2).
- the bottom wall 1b of the processing vessel 1 is provided with three windows 1e. Each window 1 e is arranged between each distance measuring part 9 and shower head 3 .
- each distance measuring section 9 forms a line segment connecting each distance measuring section 9 from the intersection of a straight line passing through the center O of the stage 2 and parallel to the Z axis and a plane parallel to the X and Y axes. It is arranged on the plate member 700 so that the angle is 120°.
- the plate member 700 may be provided with four or more distance measurement units 9 along the extension direction of the plate member 700 .
- each distance measuring unit 9 can measure the first distance between the showerhead 3 and the distance measuring unit 9 .
- the three distance measuring units 9 are arranged along the outer periphery of the stage 2 so as to be evenly spaced when viewed from the direction intersecting the lower surface of the shower head 3 .
- each distance measuring unit 9 emits light.
- the emitted laser light can pass through the window 1e and the through hole 20 at the same time. Therefore, the plurality of distance measurement units 9 can simultaneously measure the first distance, and the time required for measuring the first distance by the plurality of distance measurement units 9 can be shortened.
- the position 3f of the lower surface of the shower head 3, which is irradiated with the laser light is preferably a flat surface.
- a position 3f on the lower surface of the showerhead 3 is an example of a measurement position.
- the laser light emitted from each distance measuring section 9 passes through the window 1e. Then, the lower surface of the stage 2 is irradiated. Then, the laser beam reflected by the lower surface of the stage 2 passes through the window 1 e and is received by the distance measuring section 9 . Thereby, the second distance between the lower surface of the stage 2 and the distance measuring section 9 can be measured in each distance measuring section 9 .
- the processing container 1 deforms due to the pressure difference with the outside of the processing container 1. Further, the temperature of the processing container 1 changes due to temperature control of the processing container 1 and heat of substrate processing performed in the processing container 1 .
- the processing container 1 also deforms when the temperature of the processing container 1 changes.
- the stress due to the deformation of the processing container 1 is transmitted to the stage 2 , and the stage 2 may tilt with respect to the shower head 3 .
- a plurality of actuators 72 are provided between the bottom wall 1b of the processing container 1 and a base member 73 that can move integrally with the stage 2.
- a plurality of actuators 72 adjust the inclination of the stage 2 with respect to the showerhead 3 by moving the base member 73 relative to the bottom wall 1b.
- An exhaust port 40 is formed in the bottom wall 1 b of the processing container 1 .
- An exhaust device 42 is connected to the exhaust port 40 via a pipe 41 .
- the evacuation device 42 has a vacuum pump, a pressure control valve, and the like. The inside of the processing container 1 can be depressurized to a predetermined degree of vacuum by the exhaust device 42 .
- the control unit 102 has a memory, a processor, and an input/output interface.
- the memory stores programs executed by the processor, recipes including conditions for each process, and the like.
- the processor executes programs read from the memory, and controls each part of the main body 101 via the input/output interface based on recipes stored in the memory.
- FIG. 4 is a flowchart illustrating an example of a tilt adjustment method according to one embodiment. Each step illustrated in FIG. 4 is realized by the control unit 102 controlling each unit of the main body 101 .
- step S10 the gate valve G is opened, and the substrate W is carried into the processing container 1 through the opening 1a by a transfer device (not shown) and placed on the stage 2. As shown in FIG. Then, the gate valve G is closed, and the substrate W is attracted and held on the upper surface of the stage 2 by electrostatic force.
- step S11 gas is supplied into the processing container 1 from the gas supply unit 35 through the shower head 3, the gas in the processing container 1 is discharged by the exhaust device 42, and the pressure control valve in the exhaust device 42 causes the pressure in the processing container to rise. 1 is adjusted to a predetermined pressure.
- the predetermined pressure is the pressure when the substrate W is processed, for example.
- step S12 adjustment of the temperature of the substrate W is started (S12).
- step S12 power is supplied to the heater 2b built in the stage 2, and the substrate W is heated.
- the cooling medium temperature-controlled by the chiller unit is supplied to the flow path formed inside the stage 2 , thereby cooling the stage 2 and cooling the substrate W through the stage 2 .
- the temperature of the substrate W is adjusted to a predetermined temperature by heating by the heater 2b and cooling by the coolant.
- the predetermined temperature is the temperature at which the substrate W is processed, for example.
- the order of steps S11 and S12 may be reversed, and steps S11 and S12 may proceed simultaneously.
- control unit 102 determines whether or not the pressure inside the processing chamber 1 has been adjusted to within a predetermined range and the temperature of the substrate W has been adjusted to within a predetermined range. (S13). If the pressure in the processing container 1 is not adjusted to within a predetermined range, or the temperature of the substrate W is not adjusted to a temperature within a predetermined range (S13: No), the control The unit 102 executes the process shown in step S13 again.
- the control unit 102 controls the rotor 8 as follows. That is, the control unit 102 moves the stage 2 until the position of the through hole 20 of the stage 2 reaches an angle at which the optical axis La of the laser beam emitted from the distance measuring unit 9 toward the shower head 3 passes.
- the rotating part 8 is controlled to rotate (S14).
- Step S14 is an example of the first rotation step. As a result, as shown in FIGS.
- the optical axis La of the laser light emitted from each distance measuring unit 9 passes through the through hole 20 and is emitted to the position 3f on the lower surface of the shower head 3. be. Then, the laser beam reflected at the position 3f on the lower surface of the shower head 3 passes through the through hole 20 and is received by the distance measuring section 9. As shown in FIG.
- each through-hole 20 is provided on the outer peripheral side of the stage 2 with respect to the area 2e on the stage 2 on which the substrate W is placed, as shown in FIG. 2, for example. Therefore, even when the substrate W is placed on the stage 2 , the laser beams emitted from the respective distance measuring units 9 can pass through the through holes 20 .
- Step S15 is an example of the first measurement step.
- the first distance measured by each distance measuring section 9 is output to the control section 102 .
- Step S16 is an example of the second rotation step. 6 and 7, for example, laser light emitted from each distance measuring unit 9 toward the shower head 3 is blocked by the through hole 20. As shown in FIG. Therefore, the laser light emitted from each distance measuring section 9 is reflected at the position 2 c on the lower surface of the stage 2 and received by the distance measuring section 9 .
- the distance measuring unit 9 measures a second distance between the distance measuring unit 9 and the lower surface of the stage 2 based on the laser light irradiated to the stage 2 and the reflected light received from the stage 2 ( S17).
- Step S17 is an example of a second measurement step.
- a second distance measured by each distance measuring unit 9 is output to the control unit 102 .
- the order of the series of steps S14 to S15 and the series of steps S16 to S17 may be reversed.
- the control unit 102 controls the lower surface of the shower head 3 and the stage 2 at each position where the distance measuring unit 9 is provided. is calculated (S18).
- Three distance measuring units 9 are provided below the stage 2 . Therefore, in step S18, the distance between the lower surface of the shower head 3 and the lower surface of the stage 2 is calculated at the three locations where the distance measuring units 9 are provided.
- control unit 102 calculates the inclination of the lower surface of the stage 2 with respect to the lower surface of the shower head 3 (S19).
- the distance between the bottom surface of the shower head 3 and the bottom surface of the stage 2 is calculated at three locations where the distance measuring units 9 are provided. slope can be calculated.
- the pressure inside the processing container 1 is controlled to be lower than the atmospheric pressure.
- the processing container 1 may be deformed due to the pressure difference with the outside of the processing container 1 .
- the temperature of the members of the processing container 1 is controlled to be different from the temperature of the outside air.
- the temperature of the member is transmitted to the processing container 1 and the temperature of the processing container 1 changes.
- the processing container 1 may be deformed.
- a first distance and a second distance are measured by each distance measuring unit 9 .
- the pressure within a predetermined range is, for example, the pressure when the substrate W is processed.
- the temperature within a predetermined range is the temperature at which the substrate W is processed, for example.
- the first distance and the second distance are measured after adjusting the pressure and temperature at which the substrate W is processed.
- the relative inclination of the lower surface of the stage 2 with respect to the lower surface of the showerhead 3 is calculated. This makes it possible to calculate the relative inclination of the lower surface of the stage 2 with respect to the lower surface of the shower head 3 in the environment where the substrate W is actually processed.
- the controller 102 changes the tilt of the stage 2 based on the tilt calculated in step S19 so that the lower surface of the shower head 3 and the lower surface of the stage 2 are parallel (S20).
- Step S20 is an example of a change step.
- the control unit 102 calculates the tilt of the stage 2 that offsets the tilt calculated in step S19.
- the control unit 102 controls the tilt changing unit 7 so that the stage 2 has the calculated tilt. Thereby, the lower surface of the shower head 3 and the substrate W placed on the stage 2 can be positioned in parallel.
- step S20 After the tilt of the stage 2 has been changed in step S20, the substrate W is processed (S21). Then, the tilt adjustment method shown in this flow chart ends.
- a vacuum processing apparatus 100 of this embodiment includes a processing container 1 , a stage 2 , a support member 2 a , an inclination changing section 7 , a distance measuring section 9 and a control section 102 .
- the processing container 1 has an upper wall, a bottom wall 1b, and a side wall 1f, and can maintain a vacuum atmosphere inside.
- a stage 2 is provided in the processing container 1 and a substrate W is placed on the stage 2 . Further, the stage 2 holds the substrate W so as to face the upper wall.
- the support member 2a penetrates the bottom wall 1b of the processing container 1 and supports the stage 2 from below.
- the tilt changer 7 is provided at the lower end portion 2 d of the support member 2 a located outside the processing container 1 and changes the tilt of the stage 2 with respect to the upper wall of the processing container 1 .
- the distance measuring unit 9 measures the distance between the upper wall and the stage 2 at a position 3 f on the surface of the upper wall facing the stage 2 . Based on the distance between the upper wall and the stage 2 measured by the distance measuring unit 9, the control unit 102 controls the tilt changing unit 7 so that the upper wall and the stage 2 are parallel. As a result, tilting of the stage 2 with respect to the upper wall of the processing container 1 can be suppressed.
- one distance measuring section 9 is provided corresponding to each of the three or more positions 3f on the surface of the upper wall.
- the control unit 102 controls the tilt changing unit 7 so that the upper wall and the stage 2 are parallel based on the distance between the upper wall and the stage 2 measured by each distance measuring unit 9. .
- tilting of the stage 2 with respect to the upper wall of the processing container 1 can be suppressed more accurately.
- the vacuum processing apparatus 100 in the above-described embodiment includes a rotating section 8 that rotates the stage 2 .
- the distance measuring unit 9 is provided below the stage 2, irradiates light toward each position 3f, and receives the reflected light and an object on the optical axis of the irradiated light. The distance between the distance measuring unit 9 and the object is measured based on the light.
- a through hole 20 is formed in the stage 2 .
- the control unit 102 controls the rotation unit 8 so that the stage 2 rotates until the position of the through-hole 20 of the stage 2 reaches an angle at which the light irradiated along the optical axis passes through the through-hole 20. After that, the distance measuring section 9 is caused to measure a first distance from the distance measuring section 9 to the upper wall.
- control unit 102 controls the rotation unit 8 so that the stage 2 rotates until the angle at which the stage 2 blocks the light emitted along the optical axis
- the control unit 102 instructs the distance measurement unit 9 to the bottom surface of the stage 2 is measured.
- the control unit 102 calculates the distance between the upper wall and the stage 2 based on the difference between the first distance and the second distance. Thereby, the inclination of the stage 2 with respect to the upper wall of the processing container 1 can be calculated.
- the plurality of distance measuring units 9 are arranged at equal intervals along the outer circumference of the stage 2 when viewed from the direction intersecting the surface of the upper wall. Thereby, the inclination of the stage 2 with respect to the upper wall of the processing container 1 can be calculated more accurately.
- the through-hole 20 is formed in a region outside the region on which the substrate W is placed on the stage 2 . Therefore, even when the substrate W is placed on the stage 2 , the light emitted from each distance measuring section 9 can pass through the through hole 20 .
- the number of through holes 20 is the same as the number of distance measuring units 9, and the plurality of through holes 20 are arranged along the outer periphery of the stage 2 at regular intervals.
- the plurality of distance measurement units 9 can simultaneously measure the first distance, and the time required for measuring the first distance by the plurality of distance measurement units 9 can be shortened.
- the plate member 700 is connected to the bottom wall 1b of the processing container 1 via the link member 701 that absorbs deformation of the bottom wall 1b.
- the tilt changer 7 changes the tilt of the stage 2 with the plate member 700 as a reference.
- the distance measuring section 9 is fixed to the plate member 700 . Accordingly, even when the bottom wall 1b of the processing vessel 1 is deformed, the distance measurement accuracy of the distance measuring unit 9 can be maintained at a high level.
- control unit 102 adjusts the pressure in the processing container 1 to the pressure used in processing the substrate W when the substrate W is placed on the stage 2 , and adjusts the temperature of the substrate W to After adjusting to the temperature used in the process, the distance measurement unit 9 is caused to measure the distance between the top wall and the stage 2 . Thereby, the distance between the upper wall and the stage 2 can be measured in the environment where the substrate W is actually processed. This makes it possible to calculate the relative tilt of the stage 2 with respect to the upper wall in the environment where the substrate W is actually processed.
- the tilt adjustment method in the above-described embodiment includes a first rotation process, a first measurement process, a second rotation process, a second measurement process, and a change process.
- the first rotation step the position of the through hole 20 formed in the stage 2 on which the substrate W is placed is adjusted to the position of the through hole 20 by the light emitted along the optical axis from the distance measuring unit 9 provided below the stage 2.
- the stage 2 is rotated until it reaches an angle at which it passes through the .
- the distance measuring unit 9 and the upper wall are measured based on the light emitted from the distance measuring unit 9 along the optical axis to the upper wall of the processing container 1 and the light received by the distance measuring unit 9 .
- a first distance between is measured.
- the stage 2 is rotated until the angle of the stage 2 blocks the light emitted from the distance measuring section 9 along the optical axis.
- the distance between the distance measuring unit 9 and the lower surface of the stage 2 is determined based on the light emitted from the distance measuring unit 9 along the optical axis and the light received by the distance measuring unit 9.
- a second distance is measured.
- the distance between the top wall and the stage 2 is calculated based on the difference between the first distance and the second distance, and the top wall and the stage 2 are aligned in parallel based on the calculated distance.
- the inclination of the stage 2 with respect to the upper wall is changed so that As a result, tilting of the stage 2 with respect to the upper wall of the processing container 1 can be suppressed.
- a plurality of through holes 20 are formed in the stage 2 along the outer circumference of the stage 2, but the technology disclosed is not limited to this.
- one through hole 20 may be formed in the stage 2 as shown in FIG. 8, for example.
- the stage 2 by rotating the stage 2 , the laser light emitted from each distance measuring section 9 toward the shower head 3 can pass through the through hole 20 .
- the stage 2 can block the laser light emitted from each distance measuring unit 9 toward the shower head 3 .
- the through-hole 20 is formed in the stage 2, the through-hole 20 is formed in the vicinity of the position where the reference shape OF indicating the orientation of the substrate W is arranged, as shown in FIG. preferably. Thereby, the influence of the through-holes 20 of the stage 2 on the uniformity of processing of the substrate W can be reduced.
- a plurality of through holes 20 are formed in the stage 2 along the outer circumference of the stage 2, but the technology disclosed is not limited to this.
- a plurality of convex portions 2f and a plurality of concave portions 2g may be formed along the outer circumference of the stage 2, as shown in FIG. 9, for example.
- the stage 2 is formed with three convex portions 2f and three concave portions 2g.
- the three concave portions 2g are arranged along the outer periphery of the stage 2 so as to be evenly spaced.
- Each concave portion 2g is arranged, for example, so that the angle formed by the line segment connecting the center O of the stage 2 and each concave portion 2g is 120°.
- the lower surface of the convex portion 2f is formed so as to be parallel to the upper surface of the stage 2 on which the substrate W is placed. Also in such a configuration, by rotating the stage 2, the laser light emitted from each distance measuring section 9 toward the shower head 3 can pass through the concave portion 2g. Further, by rotating the stage 2, it is possible to block the laser light emitted from each distance measuring unit 9 toward the shower head 3 by the convex portion 2f. Also in the example of FIG. 9, one recess 2g may be formed in the vicinity of the position where the reference shape OF of the substrate W is arranged, as in FIG.
- a plurality of through holes 20 are formed in the stage 2 along the outer circumference of the stage 2, but the technology disclosed is not limited to this.
- the outer periphery of the stage 2 may be formed with one projection 2f projecting from the outer periphery of the stage 2 in a direction away from the stage 2, as shown in FIG. 10, for example.
- the lower surface of the convex portion 2f is formed so as to be parallel to the upper surface of the stage 2 on which the substrate W is placed. Even in such a configuration, by rotating the stage 2 to an angle at which the projection 2f does not block the laser light emitted from the distance measurement unit 9 toward the showerhead 3, the distance measurement unit 9 can reach the showerhead 3.
- a plurality of protrusions 2f may be formed along the outer periphery of the stage 2, similar to the protrusions 2f of FIG.
- the distance measurement unit 9 measures the first distance and the second distance using laser light, but the technology disclosed is not limited to this.
- the distance measuring unit 9 may measure the first distance and the second distance using light other than laser light, or measure the first distance and the second distance using other electromagnetic waves such as millimeter waves. may be measured.
- reaction by-products adhere to the inside of the processing container 1 such as the lower surface of the shower head 3 . If such deposits adhere to the lower surface of the shower head 3, the accuracy of measuring the distance between the distance measuring section 9 and the lower surface of the shower head 3 is lowered. Therefore, the first distance and the second distance are measured by the distance measuring unit 9 after the cleaning for removing deposits in the processing container 1 is performed and before the processing of the substrate W is started. It is preferably performed on Thereby, the first distance and the second distance can be measured with higher accuracy.
- the first distance measured before the substrate W is processed is stored as a reference value, and the first distance is remeasured each time a predetermined number of substrates W are processed. good too. Then, the thickness of the deposit adhering to the lower surface of the shower head 3 may be estimated from the measured first distance and the reference value. This makes it possible to determine the timing of cleaning the inside of the processing container 1 according to the actual thickness of the deposit.
- each distance measuring unit 9 measures the first distance and the second distance, but the disclosed technique is not limited to this.
- the distance measuring section 9 for measuring the first distance and the distance measuring section 9 for measuring the second distance may be separately provided on the plate member 700 .
- the distance measuring unit 9 that measures the first distance irradiates laser light toward the lower surface of the shower head 3 from a position where the laser light is not always blocked by the stage 2, and measures the second distance.
- the measurement unit 9 constantly irradiates the laser beam toward the lower surface of the stage 2 .
- the processing container 1 has the shower head 3 as an example of the upper wall, but the technology disclosed is not limited to this.
- the upper wall of the processing container 1 may be an electrode, a wall surface, or the like that does not have the gas ejection holes 3d.
- the vacuum processing apparatus 100 that processes the substrate W using capacitively-coupled plasma (CCP) was described as an example of the plasma source, but the plasma source is not limited to this.
- plasma sources other than capacitively coupled plasma include inductively coupled plasma (ICP), microwave excited surface wave plasma (SWP), electron cycloton resonance plasma (ECP), and helicon wave excited plasma (HWP). be done.
- the vacuum processing apparatus 100 that performs film formation has been described as an example, but the technology disclosed is not limited to this. That is, the disclosed technology can be applied to other vacuum processing apparatuses such as an etching apparatus and a heating apparatus as long as the vacuum processing apparatus processes the substrate W under a reduced pressure environment.
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Abstract
Description
図1は、一実施形態における真空処理装置100の構成の一例を示す概略断面図である。図1に例示された真空処理装置100は、真空雰囲気において成膜を行う装置である。例えば図1に示された真空処理装置100は、基板Wに対して、プラズマを用いたCVD(Chemical Vapor Deposition)処理を行なう装置である。
図4は、一実施形態における傾き調整方法の一例を示すフローチャートである。図4に例示された各ステップは、制御部102が本体101の各部を制御することにより実現される。
なお、本願に開示された技術は、上記した実施形態に限定されるものではなく、その要旨の範囲内で数々の変形が可能である。
La 光軸
O 中心
OF 基準形状
W 基板
100 真空処理装置
101 本体
102 制御部
1 処理容器
1a 開口部
1b 底壁
1b1 凹部
1b2 球面軸受
1c 開口部
1d 絶縁部材
1e 窓
1f 側壁
2 ステージ
2a 支持部材
2b ヒータ
2c 位置
2d 下端部
2e 領域
2f 凸部
2g 凹部
20 貫通孔
3 シャワーヘッド
3a 天板
3b シャワープレート
3c ガス拡散室
3d ガス吐出孔
3e ガス導入口
3f 位置
30 RF電源
31 整合器
35 ガス供給部
36 配管
40 排気口
41 配管
42 排気装置
7 傾き変更部
70 吸収機構
70a 開口部
71 べローズ
72 アクチュエータ
73 ベース部材
73a 開口部
700 板部材
701 リンク部材
702 凸部
703 凹部
704 球面軸受
705 凸部
8 回転部
80 回転軸
81 真空シール
82 モータ
83 スリップリング
9 距離測定部
Claims (10)
- 上部壁、底壁、および側壁を有し、内部を真空雰囲気に維持可能な処理容器と、
前記処理容器内に設けられ、基板が載せられるステージであって、前記基板を前記上部壁に対向するように保持するステージと、
前記処理容器の前記底壁を貫通して前記ステージを下方から支持する支持部材と、
前記処理容器の外部に位置する前記支持部材の端部に設けられ、前記処理容器の前記上部壁に対して前記ステージの傾きを変更する傾き変更部と、
前記ステージに対向する前記上部壁の面における測定位置において前記上部壁と前記ステージとの間の距離を測定する距離測定部と、
前記距離測定部によって測定された前記上部壁と前記ステージとの間の距離に基づいて、前記上部壁と前記ステージとが平行になるように前記傾き変更部を制御する制御部と
を備える真空処理装置。 - 前記距離測定部は、3箇所以上の前記測定位置のそれぞれに対応して1つずつ設けられており、
前記制御部は、
それぞれの前記距離測定部によって測定された前記上部壁と前記ステージとの間の距離に基づいて、前記上部壁と前記ステージとが平行になるように前記傾き変更部を制御する請求項1に記載の真空処理装置。 - 前記ステージを回転させる回転部を備え、
前記距離測定部は、前記ステージの下方に設けられ、前記測定位置へ向けて光を照射し、照射された光と、前記光の光軸上にある物体から反射して受光された光とに基づいて、前記距離測定部と前記物体との間の距離を測定し、
前記ステージには、貫通孔が形成されており、
前記制御部は、
前記ステージの前記貫通孔の位置が、前記光軸に沿って照射される光が前記貫通孔を通過する位置となる角度となるまで前記ステージが回転するように前記回転部を制御した後に、前記距離測定部に、前記距離測定部と前記上部壁との間の第1の距離を測定させ、
前記ステージが前記光軸に沿って照射される光を遮る角度となるまで前記ステージが回転するように前記回転部を制御した後に、前記距離測定部に、前記距離測定部と前記ステージの下面との間の第2の距離を測定させ、
前記第1の距離と前記第2の距離の差に基づいて、前記上部壁と前記ステージとの間の距離を算出する請求項1または2に記載の真空処理装置。 - 前記貫通孔は、前記ステージにおいて前記基板が載せられる領域の外側の領域に形成されている請求項3に記載の真空処理装置。
- 前記距離測定部は、3箇所以上の前記測定位置のそれぞれに1つずつ設けられており、
複数の前記距離測定部は、前記上部壁の面に交差する方向から見た場合に、前記ステージの外周に沿って等間隔に配置されている請求項3または4に記載の真空処理装置。 - 前記貫通孔の数は、前記距離測定部の数と同じであり、
複数の前記貫通孔は、前記ステージの外周に沿って等間隔で配置されている請求項5に記載の真空処理装置。 - 前記処理容器の前記底壁には、前記底壁の変形を吸収するリンク部材を介して板部材が連結されており、
前記傾き変更部は、前記板部材を基準として前記ステージの傾きを変更し、
前記距離測定部は、前記板部材に固定されている請求項1から6のいずれか一項に記載の真空処理装置。 - 前記制御部は、
前記ステージに前記基板が載せられ、前記処理容器内の圧力が前記基板に対する処理で使用される圧力に調整され、前記基板の温度が前記基板に対する処理で使用される温度に調整された後に、前記距離測定部に前記上部壁と前記ステージとの間の距離を測定させる請求項1から7のいずれか一項に記載の真空処理装置。 - 前記制御部は、
前記処理容器内のクリーニングが実行された後に、前記距離測定部にそれぞれの測定位置について前記上部壁と前記ステージとの間の距離を測定させる請求項1から8のいずれか一項に記載の真空処理装置。 - 基板を載せるステージに形成された貫通孔の位置が、前記ステージの下方に設けられた距離測定部から光軸に沿って照射される光が前記貫通孔を通過する位置となる角度となるまで前記ステージを回転させる第1の回転工程と、
前記距離測定部から前記光軸に沿って処理容器の上部壁へ照射された光と、前記距離測定部によって受光された光とに基づいて前記距離測定部と前記上部壁との間の第1の距離を測定する第1の測定工程と、
前記ステージが前記光軸に沿って前記距離測定部から照射される光を遮る角度となるまで前記ステージを回転させる第2の回転工程と、
前記距離測定部から前記光軸に沿って照射された光と、前記距離測定部によって受光された光とに基づいて、前記距離測定部と前記ステージの下面との間の第2の距離を測定する第2の測定工程と、
前記第1の距離と前記第2の距離の差に基づいて、前記上部壁と前記ステージとの間の距離を算出し、算出された距離に基づいて、前記上部壁と前記ステージとが平行になるように前記上部壁に対して前記ステージの傾きを変更する変更工程と
を含む傾き調整方法。
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JP2014098202A (ja) * | 2012-11-15 | 2014-05-29 | Tokyo Electron Ltd | 成膜装置 |
JP2015183211A (ja) * | 2014-03-20 | 2015-10-22 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
US20150376782A1 (en) * | 2014-06-27 | 2015-12-31 | Kevin Griffin | Wafer Placement And Gap Control Optimization Through In Situ Feedback |
US20200105573A1 (en) * | 2018-09-28 | 2020-04-02 | Applied Materials, Inc. | Coaxial lift device with dynamic leveling |
US20200217657A1 (en) * | 2019-01-03 | 2020-07-09 | Lam Research Corporation | Distance measurement between gas distribution device and substrate support at high temperatures |
US20210013085A1 (en) * | 2019-07-10 | 2021-01-14 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
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JP2014098202A (ja) * | 2012-11-15 | 2014-05-29 | Tokyo Electron Ltd | 成膜装置 |
JP2015183211A (ja) * | 2014-03-20 | 2015-10-22 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
US20150376782A1 (en) * | 2014-06-27 | 2015-12-31 | Kevin Griffin | Wafer Placement And Gap Control Optimization Through In Situ Feedback |
US20200105573A1 (en) * | 2018-09-28 | 2020-04-02 | Applied Materials, Inc. | Coaxial lift device with dynamic leveling |
US20200217657A1 (en) * | 2019-01-03 | 2020-07-09 | Lam Research Corporation | Distance measurement between gas distribution device and substrate support at high temperatures |
US20210013085A1 (en) * | 2019-07-10 | 2021-01-14 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
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