WO2022161942A1 - Reflektives optisches element und verfahren zur reparatur und/oder aufbereitung eines reflektiven optischen elements - Google Patents
Reflektives optisches element und verfahren zur reparatur und/oder aufbereitung eines reflektiven optischen elements Download PDFInfo
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- WO2022161942A1 WO2022161942A1 PCT/EP2022/051610 EP2022051610W WO2022161942A1 WO 2022161942 A1 WO2022161942 A1 WO 2022161942A1 EP 2022051610 W EP2022051610 W EP 2022051610W WO 2022161942 A1 WO2022161942 A1 WO 2022161942A1
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- Prior art keywords
- optical element
- reactive
- release layer
- reflective optical
- reflective
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims description 15
- 230000003750 conditioning effect Effects 0.000 title abstract 2
- 238000000576 coating method Methods 0.000 claims abstract description 80
- 239000011248 coating agent Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 230000008859 change Effects 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 6
- 238000010892 electric spark Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 121
- 230000005855 radiation Effects 0.000 description 10
- 230000004913 activation Effects 0.000 description 9
- 239000006096 absorbing agent Substances 0.000 description 8
- 230000035882 stress Effects 0.000 description 8
- 125000006850 spacer group Chemical group 0.000 description 7
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 206010024769 Local reaction Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- PNXKRHWROOZWSO-UHFFFAOYSA-N [Si].[Ru] Chemical compound [Si].[Ru] PNXKRHWROOZWSO-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
Definitions
- the present invention relates to a reflective optical element for the extreme ultraviolet wavelength range, having a substrate and a reflective coating.
- the present invention relates to a method for repairing and/or processing reflective optical elements for the EUV wavelength range.
- EUV extreme ultraviolet
- a reflective optical element for the extreme ultraviolet wavelength range having a substrate and a reflective coating, characterized in that a reactive detachment layer is arranged between the substrate and the reflective coating.
- the inventors have recognized that, on the one hand, good adhesion of the reflective coating can be achieved during use of the reflective optical element and, on the other hand, the reflective coating can be detached for the purpose of repairing or processing the reflective optical element if a reactive detachment layer is provided between the substrate and the reflective coating , which has different physical properties after a reaction than before and can therefore influence the detachment behavior of the reflective coating.
- the reflective optical element has at least one additional reactive detachment layer and one additional reflective coating, the at least two reactive detachment layers and the at least two reflective coatings being arranged alternately. This makes it possible to remove the reflective coating, which is exposed to the vacuum, with the underlying reactive detachment layer if necessary, and to have another reflective coating available without recoating. There can be two, three, four or more reflective coatings with reactive release layer.
- the reflective coating is preferably designed as a multi-layer system that has layers of at least two different materials with different real parts of the refractive index at a wavelength in the extreme ultraviolet wavelength range, which are arranged alternately.
- Such reflective optical elements are particularly suitable for use with quasi-normal incidence of EUV radiation, but can also be designed for broadband reflection.
- the reactive detachment layer has at least two substances which, after the introduction of an energy pulse, can react with one another in such a way that the detachment layer has a different volume than before the introduction of the energy pulse.
- This change in volume induces stresses that promote detachment from the substrate, preferably cause the reactive detachment layer with the reflective coating to detach as completely as possible from the substrate. This can happen, for example, as the reactive release layer with a reflective coating flaking off the substrate.
- the at least two substances are preferably substances which react exothermically with one another. This has the advantage that it can be sufficient to introduce an energy pulse only locally into the reactive detachment layer as activation energy and the energy generated during the local reaction in the detachment layer can in turn serve as activation energy to trigger the reaction in adjacent regions, so that the In the best case, reaction can spread over the entire surface of the reactive release layer.
- the reactive detachment layer has a plurality of layers made of the at least two substances, which are arranged alternately.
- the number of interfaces between the at least two substances can be increased, as a result of which the reaction between the substances can proceed more efficiently via the reactive detachment layer as a whole.
- the at least two substances are preferably two metals or a metal and a semiconductor. This allows substances to be selected in a targeted manner that, when reacting with one another, lead to a layer with sufficiently large differences in physical parameters, such as different volumes, in order to induce stresses in the reflective optical element that may be sufficient to cause the release layer and the reflective coating to detach to allow.
- one of the at least two substances is one from the group consisting of titanium, zirconium and niobium and that the other of the at least two substances is one from the group consisting of silicon and carbon, or one of the at least two substances is palladium and the other is at least two substances aluminum.
- these substance combinations lead to noticeable changes in the volume of the reactive detachment layer, with the reactions also taking place exothermally.
- the object is achieved by a method for repairing and/or processing reflective optical elements for the EUV wavelength range, with the steps: - Providing a reflective optical element for the extreme-ultraviolet wavelength range, comprising a substrate and a reflective coating, in which a reactive detachment layer is arranged between the substrate and the reflective coating, in particular a reflective optical element as described above;
- reflective optical elements can also be prepared or repaired in the case of substrates with free-form surfaces if a reactive detachment layer is provided between the substrate and the reflective coating that may need to be replaced.
- an energy pulse is applied, which serves as activation energy for triggering a reaction within the reactive detachment layer.
- a change in volume caused by the reaction induces stresses between the release layer and the substrate as well as the release layer and the reflective coating, which lead to the reflective coating and the reactive release layer becoming detached.
- the remaining reflective optical element is processed insofar as it is available for renewed coating.
- the pulse of energy is introduced into the reactive release layer as an electric spark, laser beam, electron beam, or ion beam, or a combination thereof.
- the laser beam, electron beam and ion beam can also be pulsed and can be used to inject energy into the reactive release layer through the reflective coating.
- Exposed areas of the reactive detachment layer can also be provided in order to introduce an energy pulse into the detachment layer, in particular by means of electric sparks or by applying a voltage to the detachment layer, but also by irradiation.
- the reactive release layer preferably experiences a volume change of at least ⁇ 5% as a result of the introduction of the energy pulse. As a result, strong stresses can be induced in the reflective optical element, which can lead to the reflective coating and the reactive detachment layer flaking off.
- a new reflective coating is applied to obtain a repaired reflective optical element.
- a new reactive detachment layer is advantageously applied in this case, which is applied between the substrate and the new reflective coating, so that the reflective optical element obtained in this way can itself be prepared or repaired again at a given time, as described above.
- FIG. 1 shows a basic sketch of a first embodiment of the reflective optical element according to the invention
- FIG. 2 shows a basic sketch of a second embodiment of the reflective optical element according to the invention
- FIGS. 3a-c schematically show a third embodiment of the reflective optical element according to the invention during the introduction of energy pulses, during and after the detachment of the reflective coating;
- FIG. 4 shows a basic sketch of a fourth embodiment of the reflective optical element according to the invention.
- FIG. 5 shows a basic sketch of a fifth embodiment of the reflective optical element according to the invention.
- FIG. 6 shows a schematic of an exemplary sequence of the process according to the invention
- FIG. 1 shows a schematic representation of the structure of a reflective optical element 50, which has a reactive detachment layer 60 on a substrate 59 and a reflective coating 54 thereon, which in the present example is designed as a multilayer system comprising layers of at least two different materials with different real parts of refractive index at a wavelength in the extreme ultraviolet wavelength region, which are alternately arranged.
- layers of a material with a higher real part of the refractive index at the working wavelength (also called spacer 56), at which the lithographic exposure is carried out, for example, and a material with a lower real part of the refractive index at the working wavelength are applied alternately to a substrate 59 Working wavelength (also called absorber 57), where a Absorber-spacer pair forms a stack 55.
- Working wavelength also called absorber 57
- reflective optical elements for an EUV lithography device or an optical system are designed in such a way that the respective wavelength of maximum reflectivity essentially corresponds to the working wavelength of the lithography process or other applications of the optical system.
- the thicknesses of the individual layers 56, 57 as well as the repeating stack 55 can be constant over the entire multi-layer system 54 or also vary laterally over the area or the overall thickness of the multi-layer system 54, depending on which spectral or angle-dependent reflection profile or which maximum reflectivity to be achieved at the working wavelength. If the layer thicknesses are essentially constant over the entire multi-layer system 54, one also speaks of a period 55 instead of a stack 55.
- the reflection profile can also be influenced in a targeted manner by adding more and less absorbing materials to the basic structure of absorber 57 and spacer 56 to is supplemented in order to increase the possible maximum reflectivity at the respective working wavelength.
- absorber and/or spacer materials can be exchanged for one another in some stacks, or the stacks can be constructed from more than one absorber and/or spacer material.
- additional layers can also be provided as diffusion barriers between spacer and absorber layers 56, 57.
- a material combination that is common, for example, for a working wavelength of 13.4 nm is molybdenum as the absorber material and silicon as the spacer material.
- a period 55 often has a thickness of approximately 6.7 nm, with the spacer layer 56 usually being thicker than the absorber layer 57.
- Other common material combinations include silicon-ruthenium or molybdenum-beryllium.
- a protective layer 53 can be provided on the multi-layer system 54, which can also be designed in multiple layers.
- Typical substrate materials for reflective optical elements for EUV lithography are silicon, silicon carbide, silicon-infiltrated silicon carbide, quartz glass, titanium-doped quartz glass, glass and glass ceramics.
- a layer can additionally be provided between reflective coating 54 and substrate 59, which is made of a material that has a high absorption of radiation in the EUV wavelength range, which is used during operation of the reflective optical element 50 to protect the substrate 59 to protect against radiation damage, such as unwanted compaction.
- the substrate can also be made of copper, aluminum, a copper alloy, an aluminum alloy or a copper-aluminum alloy.
- the reactive release layer can have at least two layers of different substances in each case. It can preferably have a plurality of layers consisting of at least two Have substances that are arranged alternately.
- the reactive detachment layer has at least two substances which, after the introduction of an energy pulse, can react with one another in such a way that the detachment layer has a different volume than before the introduction of the energy pulse.
- the reactive detachment layer 60 has a plurality of layers 61, 66 made of--without restricting the generality--two different substances which are arranged alternately. If a certain amount of energy is introduced into the reactive detachment layer 60, which is sufficient to serve as activation energy, these two substances can react with one another in order to lead in particular to a change in volume.
- the change in volume is preferably at least ⁇ 5% in order to induce stresses between the reactive release layer 60 and the substrate 59 on the one hand and the reflective coating 54 on the other hand with a high probability, which can lead to the reactive release layer 60 and the reflective coating 54 peeling off. It has proven particularly suitable if the at least two substances are two metals or a metal and a semiconductor.
- At least one of the selected substances has high absorption or a high effective cross section for the irradiation used to introduce the activation energy in the form of an energy pulse, in order to be able to convert the irradiation energy to a sufficient extent into activation energy and to protect the substrate 59 from damage by to be able to protect this radiation, and/or a high absorption for the EUV radiation used in the operation of the reflective optical element 50 in order to protect the substrate 59 from corresponding radiation damage.
- An additional layer can also be provided between the reactive detachment layer 60 and the substrate 59 in order to protect the substrate 59 against the activation radiation and possibly additionally against the EUV radiation during operation.
- FIG. 2 shows a second exemplary embodiment of a reflective optical element 52 for the EUV wavelength range at the start of local irradiation through the reflective coating 54 .
- a reactive detachment layer 62 is arranged between the substrate 59 and the reflective coating 54, analogously to the example illustrated in FIG.
- a plurality of layers 68, 69 made of two different substances are provided as the reactive detachment layer 62, analogous to the example from FIG. 1, which are arranged alternately.
- the two are different substances selected in such a way that they react exothermically with one another under the influence of activation energy, for example by irradiation with electromagnetic radiation, electrons or ions. This forms a reactive release layer 62 in an initially metastable state.
- the activation energy required for triggering the reaction is irradiated with electrons in the example shown here (symbolized by the wavy arrows) through the reflective coating 54 .
- the irradiation can be carried out as a single pulse or a series of pulses, which can also impinge locally at different points over the surface of the reflective coating 54 and the reactive release layer 62, respectively. Due to the selection of substances in the reactive release layer 62 which react exothermically with one another, the local introduction of an energy pulse is sufficient to cause a reaction of these substances throughout the entire release layer 62 .
- the substances in the reactive detachment layer 63 as in the example shown in FIG. good experiences have been made with volume changes of ⁇ 5% or more, which can lead to a complete delamination of the reactive release layer 63 together with the reflective coating 54 from the substrate 59, as shown schematically in FIGS. 3b, c.
- the at least two substances react exothermically with one another, so that introducing one or more energy pulses laterally into the reactive detachment layer 63 can be sufficient to trigger a reaction in the entire reactive detachment layer 63 .
- the reactive release layer comprises a plurality of layers of the at least two substances arranged in an alternating manner.
- the energy pulse(s) can be introduced laterally as radiation pulses (symbolized by wavy arrows) from electrons, ions or electromagnetic radiation, or also by an electric spark, which is laterally introduced directly into the reactive detachment layer 63 .
- One or more areas of the reactive detachment layer 63 which are not covered by the reflective coating 54 can also be provided for the introduction of one or more electric sparks, so that the reactive detachment layer 63 is exposed there. Exposed surfaces can also be contacted with electrodes to inject an electrical energy pulse into the reactive release layer 63 .
- Release layer 63 is two metals or a metal and a semiconductor, in order on the one hand to have a stable reactive release layer 63 during storage and normal operation of the reflective optical element and on the other hand to allow a reaction which results in a change in volume.
- one of the at least two substances is one from the group consisting of titanium, zirconium and niobium and the other of the at least two substances is one from the group consisting of silicon and carbon, or if one of at least two substances is palladium and the other of the at least two substances is aluminum. This allows a volume change of ⁇ 5% or more to be achieved during the reaction, so that the most complete possible detachment of the detachment layer and the reflective coating can be ensured.
- the course of the reaction in the reactive detachment layer can be influenced not only by the choice of suitable substances and their stoichiometry, but also by the structure of the reactive detachment layer, for example via the number of individual layers and their thicknesses.
- the release layer is made up of at least two periods with layers of different materials, with the layer material sequence remaining constant from period to period, it is advantageous if the corresponding layer thickness ratios are also kept constant within, in order not to overbalance the stoichiometry change. This ensures that the course of the reaction is as complete as possible.
- material combinations with more than two materials can also be used.
- FIG. 4 shows a fourth exemplary embodiment of a reflective optical element proposed here, in which the between reflective Coating 54 and substrate 59 arranged release layer is structured, insofar as the release layer has partial areas 64a, 64b, of which at least one, preferably both, are designed as a reactive release layer.
- the release layer has partial areas 64a, 64b, of which at least one, preferably both, are designed as a reactive release layer.
- three, four, five, six or more sub-areas can be provided.
- the sub-areas have different substance combinations.
- one of the partial areas can exhibit a volume expansion and another a volume contraction in order to introduce layer stresses over the entire area of the detachment layer.
- the design of the individual sub-areas can also be optimized in such a way that any layer or coating residues that may still be present after the reaction has taken place can be easily removed, for example wet-chemically.
- FIG. 5 shows a fifth exemplary embodiment of a reflective optical element proposed here, which has at least one further reactive release layer and one further reflective coating, the at least two reactive release layers and the at least two reflective coatings being arranged alternately.
- exactly two reflective coatings 54, 54' and two reactive detachment layers 65, 65' are arranged alternately on a substrate 59 in the example shown here.
- FIG. 6 schematically shows an exemplary sequence of a method proposed here for repairing and/or preparing reflective optical elements for the EUV wavelength range.
- a first step 601 “Providing a mirror with a reactive detachment layer”, a reflective optical element designed as a mirror for an EUV lithography device for the extreme ultraviolet wavelength range is provided in the example discussed here, in which a reactive detachment layer is arranged between the substrate and the reflective coating .
- a reactive detachment layer is arranged between the substrate and the reflective coating .
- a reaction is induced within the reactive release layer in step 603 "introduce an energy pulse into the reactive release layer".
- step 605 volume change of the reactive release layer.
- stresses are introduced in the EUV mirror between the substrate on the one hand and the reactive detachment layer or reflective coating on the other. These stresses can cause the reactive release liner and reflective coating to flake off, which corresponds to step 607 "Remove the reactive release layer and the reflective coating”.
- the reactive detachment layer is dimensioned in such a way that the induced voltages are so great that the substrate is exposed virtually without residue. This can be achieved, inter alia, by particularly thick reactive detachment layers with a plurality of individual layers.
- any residues present can be removed in a known manner, for example wet-chemically or by reactive etching or mechanically by polishing.
- a mirror analogous to the example shown in FIG. 5 there would thus be a prepared and repaired mirror in which the reflective coating closer to the substrate (reference number 54′ in FIG. 5) is exposed and which is ready for use again.
- the mirror has been processed to the extent that it can be repaired to a mirror ready for use again for an EUV lithography device with step 609 “application of a new reflective coating”.
- the reflective optical elements for EUV radiation discussed here can also be masks for EUV lithography or EUV mirrors that are used in optical systems with which wafers, EUV mirrors or EUV masks are examined .
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2023545853A JP2024504199A (ja) | 2021-01-28 | 2022-01-25 | 反射光学素子及び反射光学素子を修復し且つ/又は調整する方法 |
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DE102021200748.1A DE102021200748A1 (de) | 2021-01-28 | 2021-01-28 | Reflektives optisches Element und Verfahren zur Reparatur und/oder Aufbereitung eines reflektiven optischen Elements |
DE102021200748.1 | 2021-01-28 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10150874A1 (de) * | 2001-10-04 | 2003-04-30 | Zeiss Carl | Optisches Element und Verfahren zu dessen Herstellung sowie ein Lithographiegerät und ein Verfahren zur Herstellung eines Halbleiterbauelements |
EP1365263A1 (de) * | 2002-05-17 | 2003-11-26 | Canon Kabushiki Kaisha | Optisches Element, sowie Lichtquelle und Beleuchtungsvorrichtung unter Verwendung desselben |
DE102012200454A1 (de) | 2012-01-13 | 2013-01-03 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines reflektiven optischen Elements und reflektives optisches Element |
DE102013212467A1 (de) * | 2013-06-27 | 2014-04-24 | Carl Zeiss Smt Gmbh | Entfernbare beschichtung eines optischen elements |
US20160161852A1 (en) * | 2013-06-27 | 2016-06-09 | Carl Zeiss Smt Gmbh | Mirror for a microlithographic projection exposure system and method for processing a mirror |
EP3113212A1 (de) * | 2014-02-24 | 2017-01-04 | Nikon Corporation | Mehrschichtiger reflektierender spiegel, verfahren zur herstellung davon und belichtungsvorrichtung |
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DE102015103494B4 (de) | 2015-03-10 | 2020-07-16 | Friedrich-Schiller-Universität Jena | Verfahren zur Herstellung eines Reflektorelements und Reflektorelement |
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- 2022-01-25 WO PCT/EP2022/051610 patent/WO2022161942A1/de active Application Filing
- 2022-01-25 JP JP2023545853A patent/JP2024504199A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10150874A1 (de) * | 2001-10-04 | 2003-04-30 | Zeiss Carl | Optisches Element und Verfahren zu dessen Herstellung sowie ein Lithographiegerät und ein Verfahren zur Herstellung eines Halbleiterbauelements |
EP1365263A1 (de) * | 2002-05-17 | 2003-11-26 | Canon Kabushiki Kaisha | Optisches Element, sowie Lichtquelle und Beleuchtungsvorrichtung unter Verwendung desselben |
DE102012200454A1 (de) | 2012-01-13 | 2013-01-03 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines reflektiven optischen Elements und reflektives optisches Element |
DE102013212467A1 (de) * | 2013-06-27 | 2014-04-24 | Carl Zeiss Smt Gmbh | Entfernbare beschichtung eines optischen elements |
US20160161852A1 (en) * | 2013-06-27 | 2016-06-09 | Carl Zeiss Smt Gmbh | Mirror for a microlithographic projection exposure system and method for processing a mirror |
EP3113212A1 (de) * | 2014-02-24 | 2017-01-04 | Nikon Corporation | Mehrschichtiger reflektierender spiegel, verfahren zur herstellung davon und belichtungsvorrichtung |
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JP2024504199A (ja) | 2024-01-30 |
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