WO2022142474A1 - Efficient heterojunction solar cell and preparation method - Google Patents

Efficient heterojunction solar cell and preparation method Download PDF

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WO2022142474A1
WO2022142474A1 PCT/CN2021/118292 CN2021118292W WO2022142474A1 WO 2022142474 A1 WO2022142474 A1 WO 2022142474A1 CN 2021118292 W CN2021118292 W CN 2021118292W WO 2022142474 A1 WO2022142474 A1 WO 2022142474A1
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chain
gettering
preparation
silicon wafer
solar cell
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French (fr)
Chinese (zh)
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任常瑞
张佳舟
绪欣
符黎明
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常州时创能源股份有限公司
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Publication of WO2022142474A1 publication Critical patent/WO2022142474A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of solar cells, in particular to a high-efficiency heterojunction solar cell and a preparation method.
  • the gettering commonly used in the current industry is usually a tubular diffusion process similar to the traditional process, and the cleaned silicon wafer is deposited and propelled by the source in a high-temperature tubular equipment to realize the gettering.
  • the process flow is cumbersome, the wafer needs to be loaded and unloaded every time a process is completed, which takes a long time, and needs to add a cleaning equipment and a furnace tube equipment, and each corresponding equipment needs to increase loading and unloading and handling labor , resulting in high battery manufacturing costs.
  • the present invention provides a method for preparing a high-efficiency heterojunction solar cell, which can shorten the process time of the heterojunction solar cell, simplify the process flow, and improve the conversion efficiency of the heterojunction solar cell.
  • Another object of the present invention is to propose a high-efficiency heterojunction solar cell prepared by the above method.
  • a preparation method of a high-efficiency heterojunction solar cell adding a gettering process before the conventional heterojunction solar cell preparation process, and the gettering process is completed by a full-chain process;
  • the full chain process includes:
  • the gettering source is a liquid source.
  • the liquid source may be one of phosphoric acid solution, phosphorus-containing slurry or boron-containing slurry.
  • the method further includes performing chain pre-cleaning on the silicon wafer.
  • the chain-type pre-cleaning includes lye cleaning.
  • the alkali solution is a NaOH solution with a mass percentage concentration of 1-3% or a KOH solution with a mass percentage concentration of 1-3%.
  • the silicon wafer is cleaned with an acid solution.
  • the acid solution is an HF solution with a mass percentage concentration of 1-10%.
  • the temperature of the chain high-temperature gettering is 500-800° C., and the time is 2-20 min.
  • the method further includes performing chain-type post-cleaning on the silicon wafer.
  • chain-type post-cleaning is cleaning with a mass percent concentration of 1-5% HF solution.
  • a preparation method of a high-efficiency heterojunction solar cell includes the following steps:
  • the transparent conductive film is deposited on the front and back of the silicon wafer
  • N-type high-efficiency heterojunction solar cells are made by screen-printing metal electrodes on the front and back of the silicon wafer.
  • the gettering of N-type silicon wafers in step (1) is a full-chain gettering process, including chain-type pre-cleaning, chain-type coating of gettering sources, chain-type high-temperature heat treatment gettering and chain-type gettering of silicon wafers After cleaning.
  • the present invention also provides a high-efficiency heterojunction solar cell prepared according to the above method.
  • the process temperature in the production process of high-efficiency heterojunction solar cells needs to be controlled at a low temperature, generally less than 300 °C, and the whole process has no high-temperature process, so the battery of this structure has high requirements on the metal impurity content of the silicon wafer.
  • the quality requirements are becoming more and more stringent.
  • the present invention provides a preparation method of a high-efficiency heterojunction solar cell, which can reduce the metal impurity content of an N-type silicon wafer and improve the utilization rate of the N-type silicon wafer on the heterojunction solar cell.
  • a gettering process is added before the solar cell preparation process.
  • the gettering process is completed by a full-chain process, that is, it can be completed by a full-chain equipment, which sequentially includes pre-cleaning of silicon wafers, coating of gettering sources, high temperature After heat treatment gettering and wafer cleaning.
  • the surface of the silicon wafers cleaned before the chain is coated with a layer of gettering source through the chain equipment, and the gettering source can be a phosphorus-containing liquid source or a boron-containing liquid source, and then the chain annealing furnace is used for high-temperature heat treatment.
  • the gettering source can be a phosphorus-containing liquid source or a boron-containing liquid source, and then the chain annealing furnace is used for high-temperature heat treatment.
  • the gettering source can be a phosphorus-containing liquid source or a boron-containing liquid source
  • the chain annealing furnace is used for high-temperature heat treatment.
  • Complete gettering Complete gettering.
  • the advancement of phosphorus element forms an N + doping layer on the surface of the silicon wafer, or the advancement of boron element forms a P doping layer on the surface of the silicon wafer.
  • the impurity atoms in the silicon wafer are also doped toward the surface N +
  • the layer or P-doped layer migrates and diffuses, and is fixed in the N + -doped layer or P-doped layer to form a gettering layer on the surface of the silicon wafer.
  • the gettering layer on the surface of the silicon wafer is used in the subsequent conventional cell texturing. In the process, it is removed by alkaline solution etching, and finally the purpose of reducing the content of metal impurities in the silicon wafer is achieved.
  • the present invention has the following advantages:
  • the preparation method of the present invention improves the conversion efficiency of the high-efficiency heterojunction solar cell by reducing the metal impurity content of the N-type silicon wafer;
  • the high-efficiency heterojunction solar cell prepared by the present invention has a more concentrated efficiency distribution, which greatly improves product consistency;
  • the high-efficiency heterojunction solar cell prepared by the present invention reduces the cell edge leakage rate and improves the cell yield
  • the full chain gettering process of the present invention shortens the flow time of the silicon wafer in the process, reduces the probability of the silicon wafer being polluted, and improves the conversion efficiency of the battery to a certain extent, and the process takes less time. Low energy consumption and high degree of automation are conducive to industrialization and use.
  • FIG. 1 is a process flow diagram of the preparation of the heterojunction solar cell of the present invention.
  • the preparation method of the high-efficiency heterojunction solar cell according to the present invention adds a gettering process before the conventional heterojunction solar cell.
  • the gettering process is a full-chain process. Chain equipment can complete all processes.
  • the full chain process may include chain coating gettering source and chain high temperature heat treatment gettering, combined with tank-type pre-cleaning and tank-type post-cleaning; or may include chain-type pre-cleaning, chain-type Coating gettering source and chain high-temperature heat treatment gettering, combined with tank-type post-cleaning; it can also include chain-type pre-cleaning, chain-type coating gettering source, chain-type high-temperature heat treatment gettering, and chain-type post-cleaning.
  • the full-chain equipment may include a chain-type coating gettering source functional area and a chain-type high-temperature heat treatment gettering functional area; it may also include a chain-type pre-cleaning functional area and a chain-type coating gettering source functional area. and chain high-temperature heat treatment gettering functional area; it can also include chain-type pre-cleaning functional area, chain-type coating gettering source functional area, chain-type high-temperature heat treatment gettering functional area and chain-type post-cleaning functional area;
  • the transfer device transports the silicon wafers to each functional area to complete the corresponding process.
  • a preparation method of a high-efficiency heterojunction solar cell specifically comprising the following steps:
  • Chain pre-cleaning The silicon wafer is transported into the chain-type pre-cleaning functional area through the transfer roller, firstly cleaned by NaOH solution with a concentration of 1% by mass, washed with water and then cleaned by HF solution with a concentration of 5% by mass, and then dried after washing. Dry, used to remove organics, damaged layers, metal impurities and oxide layers on the surface of silicon wafers;
  • Chain coating getter source After drying, the silicon wafer is transported into the chain coating getter source functional area through the conveying roller. The phosphorus-containing slurry on the surface of the silicon wafer is evenly coated and the excess phosphorus-containing slurry is removed and dried;
  • Chain high-temperature heat treatment gettering The silicon wafers coated with phosphorus-containing slurry are transported into the chain-type high-temperature heat treatment gettering functional area through conveying rollers. At this time, the silicon wafers are heat-treated at 500-800°C for 2 minutes through the chain annealing furnace. , complete the advancement of the phosphorus element, and form an N + doped layer on the surface of the silicon wafer. At the same time, the impurity atoms in the silicon wafer also migrate and diffuse towards the surface N + doped layer, and are fixed in the surface N + doped layer, After the gettering is completed, the N + doped layer on the surface of the silicon wafer is the gettering layer;
  • Chain post-cleaning The silicon wafers after gettering are transported into the chain post-cleaning functional area through transfer rollers, and HF solution with a concentration of 1% by mass is used to clean the silicon wafers to remove the oxide layer on the surface of the silicon wafers;
  • the transparent conductive film is deposited on the front and back of the silicon wafer
  • N-type high-efficiency heterojunction solar cells are made by screen-printing metal electrodes on the front and back of the silicon wafer.
  • a preparation method of a high-efficiency heterojunction solar cell specifically comprising the following steps:
  • Chain pre-cleaning The silicon wafer is transported into the chain-type pre-cleaning functional area through the transfer roller, firstly cleaned by KOH solution with a concentration of 1% by mass, washed with water and then cleaned by a HF solution with a concentration of 1% by mass, and dried after washing with water. Dry, used to remove organics, damaged layers, metal impurities and oxide layers on the surface of silicon wafers;
  • Chain coating getter source After drying, the silicon wafer is transported into the chain coating getter source functional area through the transfer roller, the surface of the silicon wafer is coated with a layer of phosphoric acid solution through the coating device, and the silicon wafer is squeezed by the transfer roller to make the silicon wafer. The phosphoric acid solution on the surface is evenly coated and the excess phosphoric acid solution is removed and dried;
  • Chain high-temperature heat treatment gettering The silicon wafers coated with phosphoric acid solution are transported into the chain-type high-temperature heat treatment gettering functional area through conveying rollers. At this time, the silicon wafers are subjected to heat treatment at 500-800 °C for 2 minutes through the chain annealing furnace, and the completion of the heat treatment is completed. The advancement of phosphorus element forms an N + doped layer on the surface of the silicon wafer. At the same time, the impurity atoms in the silicon wafer also migrate and diffuse towards the surface N + doped layer, and are fixed in the surface N + doped layer to complete the absorption. At this time, the N + doped layer on the surface of the silicon wafer is a gettering layer;
  • Chain-type post-cleaning The silicon wafers after gettering are transported into the chain-type post-cleaning functional area through conveying rollers, and 5% HF solution by mass is used to clean the silicon wafers to remove the oxide layer on the surface of the silicon wafers;
  • the transparent conductive film is deposited on the front and back of the silicon wafer
  • N-type high-efficiency heterojunction solar cells are made by screen-printing metal electrodes on the front and back of the silicon wafer.
  • a preparation method of a high-efficiency heterojunction solar cell specifically comprising the following steps:
  • Chain pre-cleaning The silicon wafer is transported into the chain-type pre-cleaning functional area through the transfer roller, firstly cleaned by NaOH solution with a concentration of 3% by mass, washed with water and then cleaned by HF solution with a concentration of 10% by mass, and dried after washing with water. Dry, used to remove organics, damaged layers, metal impurities and oxide layers on the surface of silicon wafers;
  • Chain coating getter source After drying, the silicon wafer is transported into the chain coating getter source functional area through the conveying roller, and the surface of the silicon wafer is coated with a layer of boron-containing slurry through the coating device, and is squeezed by the conveying roller. The boron-containing slurry on the surface of the silicon wafer is uniformly coated and the excess boron-containing slurry is removed and dried;
  • Chain high-temperature heat treatment gettering The silicon wafers coated with boron-containing slurry are transported into the chain-type high-temperature heat treatment gettering functional area through conveying rollers. At this time, the silicon wafers are heat-treated at 500-800°C for 20 minutes through the chain annealing furnace. , complete the advancement of the boron element, and form a P-doped layer on the surface of the silicon wafer. At the same time, the impurity atoms in the silicon wafer also migrate and diffuse toward the surface P-doped layer, and are fixed in the P-doped layer on the surface to complete the gettering. , the P-doped layer on the surface of the silicon wafer is the gettering layer;
  • Chain post-cleaning The silicon wafers after gettering are transported into the chain post-cleaning functional area through transfer rollers, and HF solution with a concentration of 3% by mass is used to clean the silicon wafers to remove the oxide layer on the surface of the silicon wafers;
  • the transparent conductive film is deposited on the front and back of the silicon wafer
  • N-type high-efficiency heterojunction solar cells are made by screen-printing metal electrodes on the front and back of the silicon wafer.
  • the first process in the preparation process of conventional heterojunction solar cells is texturing, and the full-chain gettering process and the texturing process can also be well connected, or The output and input of silicon wafers are completed through the conveying device, and the degree of automation is high, which further reduces the manual input and is conducive to industrialization and application.

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Abstract

An efficient heterojunction solar cell and a preparation method. The preparation method is characterized in that a gettering process is added before a conventional heterojunction solar cell preparation process, and the gettering process is completed by means of a full-chain process; the full-chain process comprises: performing chained coating of a gettering source on a silicon wafer; and performing chained high-temperature gettering. According to the preparation method, conversion efficiency of the efficient heterojunction solar cell is improved by reducing the metal impurity content of an N-type silicon wafer; the efficiency distribution of the prepared efficient heterojunction solar cell is more centralized, and product consistency is greatly improved; a cell edge electric leakage rate is reduced, and the yield of cells is improved; the full-chain gettering process shortens the circulation time of the silicon wafer in a manufacturing process, reduces the pollution probability of the silicon wafer, improves the conversion efficiency of the cell to a certain extent, and is short in time consumption, low in energy consumption, high in automation degree, and beneficial to industrial popularization and application.

Description

一种高效异质结太阳能电池及制备方法A kind of high-efficiency heterojunction solar cell and preparation method thereof 技术领域technical field
本发明涉及太阳能电池技术领域，具体涉及一种高效异质结太阳能电池及制备方法。The invention relates to the technical field of solar cells, in particular to a high-efficiency heterojunction solar cell and a preparation method.
背景技术Background technique
随着光伏行业的不断发展，高效率N型晶硅电池由于其高少子寿命和无光致衰减等天然优势，是高效电池技术路线的必然选择，也是光伏行业正在进入大规模生产的新一代电池技术。其中异质结太阳能电池由于其转换效率高，工序简单受到广泛关注。With the continuous development of the photovoltaic industry, high-efficiency N-type crystalline silicon cells are the inevitable choice for the technical route of high-efficiency cells due to their natural advantages such as high minority carrier lifetime and no light-induced attenuation, and are also a new generation of cells that the photovoltaic industry is entering into mass production. technology. Among them, heterojunction solar cells have received extensive attention due to their high conversion efficiency and simple process.
由于异质结太阳能电池整个工艺过程中无传统电池中的高温扩散过程进行吸杂，因此将吸杂工序引入到异质结太阳能电池的制备流程中非常重要。然而目前行业中普遍使用的吸杂通常为类似传统工艺中的管式扩散过程，清洗后的硅片在高温管式设备中进行源的沉积和推进实现吸杂。采用这种方式吸杂，工艺流程繁琐，硅片每完成一个工序需要装卸片，耗时长，而且需要增加一台清洗设备和一台炉管设备，对应的每个设备需要增加上下料和搬运人工，导致电池制造成本很高。Since there is no high-temperature diffusion process for gettering in the whole process of heterojunction solar cells, it is very important to introduce the gettering process into the preparation process of heterojunction solar cells. However, the gettering commonly used in the current industry is usually a tubular diffusion process similar to the traditional process, and the cleaned silicon wafer is deposited and propelled by the source in a high-temperature tubular equipment to realize the gettering. Using this method to get rid of impurities, the process flow is cumbersome, the wafer needs to be loaded and unloaded every time a process is completed, which takes a long time, and needs to add a cleaning equipment and a furnace tube equipment, and each corresponding equipment needs to increase loading and unloading and handling labor , resulting in high battery manufacturing costs.
技术解决方案technical solutions
发明目的：本发明提出一种高效异质结太阳能电池的制备方法，能够缩短异质结太阳能电池的制程时间，简化工艺流程，提高异质结太阳能电池的转换效率。Purpose of the invention: The present invention provides a method for preparing a high-efficiency heterojunction solar cell, which can shorten the process time of the heterojunction solar cell, simplify the process flow, and improve the conversion efficiency of the heterojunction solar cell.
本发明的另一个目的是提出一种通过上述方法所制备的高效异质结太阳能电池。Another object of the present invention is to propose a high-efficiency heterojunction solar cell prepared by the above method.
技术方案：本发明采用如下技术方案：Technical scheme: the present invention adopts the following technical scheme:
一种高效异质结太阳能电池的制备方法，在常规异质结太阳能电池制备工序前增加一道吸杂工序，所述吸杂工序通过全链式工艺完成；A preparation method of a high-efficiency heterojunction solar cell, adding a gettering process before the conventional heterojunction solar cell preparation process, and the gettering process is completed by a full-chain process;
所述全链式工艺包括：The full chain process includes:
对硅片进行链式涂覆吸杂源；Chain coating of gettering sources on silicon wafers;
及链式高温热处理吸杂。And chain high temperature heat treatment gettering.
进一步地，所述吸杂源为液态源。Further, the gettering source is a liquid source.
更进一步地，所述液态源可以为磷酸溶液、含磷浆料或含硼浆料中的一种。Further, the liquid source may be one of phosphoric acid solution, phosphorus-containing slurry or boron-containing slurry.
进一步地，对所述硅片进行链式涂覆吸杂源之前还包括对所述硅片进行链式前清洗。Further, before performing the chain coating of the gettering source on the silicon wafer, the method further includes performing chain pre-cleaning on the silicon wafer.
进一步地，所述链式前清洗包括碱液清洗。Further, the chain-type pre-cleaning includes lye cleaning.
更进一步地，所述碱液为质量百分比浓度1～3%的NaOH溶液或质量百分比浓度1～3%的KOH溶液。Further, the alkali solution is a NaOH solution with a mass percentage concentration of 1-3% or a KOH solution with a mass percentage concentration of 1-3%.
更进一步地，所述碱液清洗后还包括对所述硅片进行酸液清洗。Further, after the alkaline solution cleaning, the silicon wafer is cleaned with an acid solution.
更进一步地，所述酸液为质量百分比浓度1～10%的HF溶液。Further, the acid solution is an HF solution with a mass percentage concentration of 1-10%.
进一步地，所述链式高温吸杂的温度为500～800℃，时间为2～20min。Further, the temperature of the chain high-temperature gettering is 500-800° C., and the time is 2-20 min.
进一步地，所述链式高温吸杂之后还包括对所述硅片进行链式后清洗。Further, after the chain-type high-temperature gettering, the method further includes performing chain-type post-cleaning on the silicon wafer.
更进一步地，所述链式后清洗为质量百分比浓度1～5%的HF溶液清洗。Further, the chain-type post-cleaning is cleaning with a mass percent concentration of 1-5% HF solution.
具体地，一种高效异质结太阳能电池的制备方法，包括如下步骤：Specifically, a preparation method of a high-efficiency heterojunction solar cell includes the following steps:
（1）对N型硅片进行吸杂；(1) Gettering of N-type silicon wafers;
（2）将吸杂后的N型硅片进行制绒，制绒的同时去除硅片表面的吸杂层；(2) Texturing the N-type silicon wafer after gettering, and removing the gettering layer on the surface of the silicon wafer while texturing;
（3）在制绒后硅片的正背面沉积本征非晶硅层；(3) Deposit an intrinsic amorphous silicon layer on the front and back of the silicon wafer after texturing;
（4）在本征非晶硅层的正背面沉积掺杂非晶硅层；(4) depositing a doped amorphous silicon layer on the front and back of the intrinsic amorphous silicon layer;
（5）硅片正背面沉积透明导电薄膜；(5) The transparent conductive film is deposited on the front and back of the silicon wafer;
（6）硅片正背面丝网印刷金属电极制成N型高效异质结太阳能电池片。(6) N-type high-efficiency heterojunction solar cells are made by screen-printing metal electrodes on the front and back of the silicon wafer.
其中，步骤（1）中对N型硅片进行吸杂为全链式吸杂工艺，包括对硅片进行链式前清洗、链式涂覆吸杂源、链式高温热处理吸杂和链式后清洗。Wherein, the gettering of N-type silicon wafers in step (1) is a full-chain gettering process, including chain-type pre-cleaning, chain-type coating of gettering sources, chain-type high-temperature heat treatment gettering and chain-type gettering of silicon wafers After cleaning.
本发明还提出了一种根据上述方法所制备的高效异质结太阳能电池。The present invention also provides a high-efficiency heterojunction solar cell prepared according to the above method.
由于高效异质结太阳能电池制作过程中的工艺温度需控制在低温下完成，一般小于300℃，整个工艺无高温过程，因此该结构的电池对硅片的金属杂质含量要求很高，对硅片的质量要求越来越苛刻。Since the process temperature in the production process of high-efficiency heterojunction solar cells needs to be controlled at a low temperature, generally less than 300 °C, and the whole process has no high-temperature process, so the battery of this structure has high requirements on the metal impurity content of the silicon wafer. The quality requirements are becoming more and more stringent.
本发明提出一种高效异质结太阳能电池的制备方法，可降低N型硅片的金属杂质含量，提高N型硅片在异质结太阳能电池上的利用率，具体地，在常规异质结太阳能电池制备工序前增加一道吸杂工序，所述吸杂工序通过全链式工艺完成，也就是通过一台全链式设备即可完成，依次包括硅片前清洗、涂覆吸杂源、高温热处理吸杂和硅片后清洗。本发明中，经过链式前清洗的硅片表面通过链式设备涂覆一层吸杂源，其吸杂源可以为含磷液态源或含硼液态源，再通过链式退火炉进行高温热处理完成吸杂。吸杂过程中，磷元素的推进在硅片表面形成N +掺杂层，或者硼元素的推进在硅片表面形成P掺杂层，此时硅片体内的杂质原子也朝向表面N +掺杂层或P掺杂层进行迁移和扩散，并固定在N +掺杂层或P掺杂层中，在硅片表面形成吸杂层，最后硅片表面的吸杂层在后续常规电池的制绒工序中通过碱液腐蚀去除，最终达到降低硅片中金属杂质含量的目的。 The present invention provides a preparation method of a high-efficiency heterojunction solar cell, which can reduce the metal impurity content of an N-type silicon wafer and improve the utilization rate of the N-type silicon wafer on the heterojunction solar cell. A gettering process is added before the solar cell preparation process. The gettering process is completed by a full-chain process, that is, it can be completed by a full-chain equipment, which sequentially includes pre-cleaning of silicon wafers, coating of gettering sources, high temperature After heat treatment gettering and wafer cleaning. In the present invention, the surface of the silicon wafers cleaned before the chain is coated with a layer of gettering source through the chain equipment, and the gettering source can be a phosphorus-containing liquid source or a boron-containing liquid source, and then the chain annealing furnace is used for high-temperature heat treatment. Complete gettering. During the gettering process, the advancement of phosphorus element forms an N + doping layer on the surface of the silicon wafer, or the advancement of boron element forms a P doping layer on the surface of the silicon wafer. At this time, the impurity atoms in the silicon wafer are also doped toward the surface N + . The layer or P-doped layer migrates and diffuses, and is fixed in the N + -doped layer or P-doped layer to form a gettering layer on the surface of the silicon wafer. Finally, the gettering layer on the surface of the silicon wafer is used in the subsequent conventional cell texturing. In the process, it is removed by alkaline solution etching, and finally the purpose of reducing the content of metal impurities in the silicon wafer is achieved.
有益效果beneficial effect
有益效果：与现有技术相比，本发明具有如下优势：Beneficial effect: Compared with the prior art, the present invention has the following advantages:
（1）本发明的制备方法通过降低N型硅片的金属杂质含量，提高了高效异质结太阳能电池的转换效率；(1) The preparation method of the present invention improves the conversion efficiency of the high-efficiency heterojunction solar cell by reducing the metal impurity content of the N-type silicon wafer;
（2）本发明所制备的高效异质结太阳能电池，效率分布更集中，大大提高了产品一致性；(2) The high-efficiency heterojunction solar cell prepared by the present invention has a more concentrated efficiency distribution, which greatly improves product consistency;
（3）本发明所制备的高效异质结太阳能电池，降低了电池边缘漏电率，提高了电池良率；(3) The high-efficiency heterojunction solar cell prepared by the present invention reduces the cell edge leakage rate and improves the cell yield;
（4）本发明的全链式吸杂工艺缩短了硅片在制程中的流转时间，减少了硅片受污染的概率，在一定程度上也提高了电池的转换效率，而且工艺耗时短，能耗低，自动化程度高，利于产业化推广使用。(4) The full chain gettering process of the present invention shortens the flow time of the silicon wafer in the process, reduces the probability of the silicon wafer being polluted, and improves the conversion efficiency of the battery to a certain extent, and the process takes less time. Low energy consumption and high degree of automation are conducive to industrialization and use.
附图说明Description of drawings
图1是本发明的异质结太阳能电池制备的工艺流程图。FIG. 1 is a process flow diagram of the preparation of the heterojunction solar cell of the present invention.
本发明的最佳实施方式BEST MODE FOR CARRYING OUT THE INVENTION
下面结合附图和实施例对本发明的技术方案作进一步的说明。The technical solutions of the present invention will be further described below with reference to the accompanying drawings and embodiments.
本发明所述的高效异质结太阳能电池的制备方法，如图1所示，在常规异质结太阳能电池制作之前增加一道吸杂工序，该吸杂工序为全链式工艺，通过一台全链式设备便可完成所有工艺。The preparation method of the high-efficiency heterojunction solar cell according to the present invention, as shown in FIG. 1, adds a gettering process before the conventional heterojunction solar cell. The gettering process is a full-chain process. Chain equipment can complete all processes.
在本发明中，全链式工艺可以是包括链式涂覆吸杂源和链式高温热处理吸杂，再结合槽式前清洗和槽式后清洗；也可以是包括链式前清洗、链式涂覆吸杂源和链式高温热处理吸杂，结合槽式后清洗；也可以是包括链式前清洗、链式涂覆吸杂源、链式高温热处理吸杂和链式后清洗。In the present invention, the full chain process may include chain coating gettering source and chain high temperature heat treatment gettering, combined with tank-type pre-cleaning and tank-type post-cleaning; or may include chain-type pre-cleaning, chain-type Coating gettering source and chain high-temperature heat treatment gettering, combined with tank-type post-cleaning; it can also include chain-type pre-cleaning, chain-type coating gettering source, chain-type high-temperature heat treatment gettering, and chain-type post-cleaning.
在本发明中，全链式设备可以包括链式涂覆吸杂源功能区和链式高温热处理吸杂功能区；也可以是包括链式前清洗功能区、链式涂覆吸杂源功能区和链式高温热处理吸杂功能区；也可以是包括链式前清洗功能区、链式涂覆吸杂源功能区、链式高温热处理吸杂功能区和链式后清洗功能区；该设备通过传送装置将硅片输送至各个功能区完成相应的工艺。In the present invention, the full-chain equipment may include a chain-type coating gettering source functional area and a chain-type high-temperature heat treatment gettering functional area; it may also include a chain-type pre-cleaning functional area and a chain-type coating gettering source functional area. and chain high-temperature heat treatment gettering functional area; it can also include chain-type pre-cleaning functional area, chain-type coating gettering source functional area, chain-type high-temperature heat treatment gettering functional area and chain-type post-cleaning functional area; The transfer device transports the silicon wafers to each functional area to complete the corresponding process.
实施例1Example 1
一种高效异质结太阳能电池的制备方法，具体包括以下步骤：A preparation method of a high-efficiency heterojunction solar cell, specifically comprising the following steps:
（1）对N型硅片进行全链式吸杂，包括：(1) Full chain gettering of N-type silicon wafers, including:
链式前清洗：硅片通过传送辊传输进入链式前清洗功能区，先通过质量百分比浓度为1%的NaOH溶液清洗，水洗后再通过质量百分比浓度为5%的HF溶液清洗，水洗后烘干，用于去除硅片表面的有机物、损伤层、金属杂质和氧化层；Chain pre-cleaning: The silicon wafer is transported into the chain-type pre-cleaning functional area through the transfer roller, firstly cleaned by NaOH solution with a concentration of 1% by mass, washed with water and then cleaned by HF solution with a concentration of 5% by mass, and then dried after washing. Dry, used to remove organics, damaged layers, metal impurities and oxide layers on the surface of silicon wafers;
链式涂覆吸杂源：烘干后硅片通过传送辊传输进入链式涂覆吸杂源功能区，硅片表面通过涂覆装置涂覆一层含磷浆料，通过传送辊挤压使硅片表面的含磷浆料涂覆均匀并去除多余的含磷浆料，烘干；Chain coating getter source: After drying, the silicon wafer is transported into the chain coating getter source functional area through the conveying roller. The phosphorus-containing slurry on the surface of the silicon wafer is evenly coated and the excess phosphorus-containing slurry is removed and dried;
链式高温热处理吸杂：表面涂覆有含磷浆料的硅片通过传送辊传输进入链式高温热处理吸杂功能区，此时硅片经过链式退火炉于500～800℃下进行热处理2min，完成磷元素的推进，在硅片表面形成N +掺杂层，同时硅片体内的杂质原子也朝向表面N +掺杂层进行迁移和扩散，并固定在表面的N +掺杂层中，完成吸杂，此时硅片表面的N +掺杂层为吸杂层； Chain high-temperature heat treatment gettering: The silicon wafers coated with phosphorus-containing slurry are transported into the chain-type high-temperature heat treatment gettering functional area through conveying rollers. At this time, the silicon wafers are heat-treated at 500-800°C for 2 minutes through the chain annealing furnace. , complete the advancement of the phosphorus element, and form an N + doped layer on the surface of the silicon wafer. At the same time, the impurity atoms in the silicon wafer also migrate and diffuse towards the surface N + doped layer, and are fixed in the surface N + doped layer, After the gettering is completed, the N + doped layer on the surface of the silicon wafer is the gettering layer;
链式后清洗：吸杂后的硅片通过传送辊传输进入链式后清洗功能区，采用质量百分比浓度为1%的HF溶液清洗硅片，用于去除硅片表面的氧化层；Chain post-cleaning: The silicon wafers after gettering are transported into the chain post-cleaning functional area through transfer rollers, and HF solution with a concentration of 1% by mass is used to clean the silicon wafers to remove the oxide layer on the surface of the silicon wafers;
（2）将吸杂后的N型硅片进行制绒，制绒的同时去除硅片表面的吸杂层；(2) Texturing the N-type silicon wafer after gettering, and removing the gettering layer on the surface of the silicon wafer while texturing;
（3）在制绒后硅片的正背面沉积本征非晶硅层；(3) Deposit an intrinsic amorphous silicon layer on the front and back of the silicon wafer after texturing;
（4）在本征非晶硅层的正背面沉积掺杂非晶硅层；(4) depositing a doped amorphous silicon layer on the front and back of the intrinsic amorphous silicon layer;
（5）硅片正背面沉积透明导电薄膜；(5) The transparent conductive film is deposited on the front and back of the silicon wafer;
（6）硅片正背面丝网印刷金属电极制成N型高效异质结太阳能电池片。(6) N-type high-efficiency heterojunction solar cells are made by screen-printing metal electrodes on the front and back of the silicon wafer.
实施例2Example 2
一种高效异质结太阳能电池的制备方法，具体包括以下步骤：A preparation method of a high-efficiency heterojunction solar cell, specifically comprising the following steps:
（1）对N型硅片进行全链式吸杂，包括：(1) Full chain gettering of N-type silicon wafers, including:
链式前清洗：硅片通过传送辊传输进入链式前清洗功能区，先通过质量百分比浓度为1%的KOH溶液清洗，水洗后再通过质量百分比浓度为1%的HF溶液清洗，水洗后烘干，用于去除硅片表面的有机物、损伤层、金属杂质和氧化层；Chain pre-cleaning: The silicon wafer is transported into the chain-type pre-cleaning functional area through the transfer roller, firstly cleaned by KOH solution with a concentration of 1% by mass, washed with water and then cleaned by a HF solution with a concentration of 1% by mass, and dried after washing with water. Dry, used to remove organics, damaged layers, metal impurities and oxide layers on the surface of silicon wafers;
链式涂覆吸杂源：烘干后硅片通过传送辊传输进入链式涂覆吸杂源功能区，硅片表面通过涂覆装置涂覆一层磷酸溶液，通过传送辊挤压使得硅片表面的磷酸溶液涂覆均匀并去除多余的磷酸溶液，烘干；Chain coating getter source: After drying, the silicon wafer is transported into the chain coating getter source functional area through the transfer roller, the surface of the silicon wafer is coated with a layer of phosphoric acid solution through the coating device, and the silicon wafer is squeezed by the transfer roller to make the silicon wafer. The phosphoric acid solution on the surface is evenly coated and the excess phosphoric acid solution is removed and dried;
链式高温热处理吸杂：表面涂覆有磷酸溶液的硅片通过传送辊传输进入链式高温热处理吸杂功能区，此时硅片经过链式退火炉于500～800℃下进行热处理2min，完成磷元素的推进，在硅片表面形成N +掺杂层，同时硅片体内的杂质原子也朝向表面N +掺杂层进行迁移和扩散，并固定在表面的N +掺杂层中，完成吸杂，此时硅片表面的N +掺杂层为吸杂层； Chain high-temperature heat treatment gettering: The silicon wafers coated with phosphoric acid solution are transported into the chain-type high-temperature heat treatment gettering functional area through conveying rollers. At this time, the silicon wafers are subjected to heat treatment at 500-800 °C for 2 minutes through the chain annealing furnace, and the completion of the heat treatment is completed. The advancement of phosphorus element forms an N + doped layer on the surface of the silicon wafer. At the same time, the impurity atoms in the silicon wafer also migrate and diffuse towards the surface N + doped layer, and are fixed in the surface N + doped layer to complete the absorption. At this time, the N + doped layer on the surface of the silicon wafer is a gettering layer;
链式后清洗：吸杂后的硅片通过传送辊传输进入链式后清洗功能区，采用质量百分比浓度为5%的HF溶液清洗硅片，用于去除硅片表面的氧化层；Chain-type post-cleaning: The silicon wafers after gettering are transported into the chain-type post-cleaning functional area through conveying rollers, and 5% HF solution by mass is used to clean the silicon wafers to remove the oxide layer on the surface of the silicon wafers;
（2）将吸杂后的N型硅片进行制绒，制绒的同时去除硅片表面的吸杂层；(2) Texturing the N-type silicon wafer after gettering, and removing the gettering layer on the surface of the silicon wafer while texturing;
（3）在制绒后硅片的正背面沉积本征非晶硅层；(3) Deposit an intrinsic amorphous silicon layer on the front and back of the silicon wafer after texturing;
（4）在本征非晶硅层的正背面沉积掺杂非晶硅层；(4) depositing a doped amorphous silicon layer on the front and back of the intrinsic amorphous silicon layer;
（5）硅片正背面沉积透明导电薄膜；(5) The transparent conductive film is deposited on the front and back of the silicon wafer;
（6）硅片正背面丝网印刷金属电极制成N型高效异质结太阳能电池片。(6) N-type high-efficiency heterojunction solar cells are made by screen-printing metal electrodes on the front and back of the silicon wafer.
实施例3Example 3
一种高效异质结太阳能电池的制备方法，具体包括以下步骤：A preparation method of a high-efficiency heterojunction solar cell, specifically comprising the following steps:
（1）对N型硅片进行全链式吸杂，包括：(1) Full chain gettering of N-type silicon wafers, including:
链式前清洗：硅片通过传送辊传输进入链式前清洗功能区，先通过质量百分比浓度为3%的NaOH溶液清洗，水洗后再通过质量百分比浓度为10%的HF溶液清洗，水洗后烘干，用于去除硅片表面的有机物、损伤层、金属杂质和氧化层；Chain pre-cleaning: The silicon wafer is transported into the chain-type pre-cleaning functional area through the transfer roller, firstly cleaned by NaOH solution with a concentration of 3% by mass, washed with water and then cleaned by HF solution with a concentration of 10% by mass, and dried after washing with water. Dry, used to remove organics, damaged layers, metal impurities and oxide layers on the surface of silicon wafers;
链式涂覆吸杂源：烘干后硅片通过传送辊传输进入链式涂覆吸杂源功能区，硅片表面通过涂覆装置涂覆一层含硼浆料，通过传送辊挤压使得硅片表面的含硼浆料涂覆均匀并去除多余的含硼浆料，烘干；Chain coating getter source: After drying, the silicon wafer is transported into the chain coating getter source functional area through the conveying roller, and the surface of the silicon wafer is coated with a layer of boron-containing slurry through the coating device, and is squeezed by the conveying roller. The boron-containing slurry on the surface of the silicon wafer is uniformly coated and the excess boron-containing slurry is removed and dried;
链式高温热处理吸杂：表面涂覆有含硼浆料的硅片通过传送辊传输进入链式高温热处理吸杂功能区，此时硅片经过链式退火炉于500～800℃下进行热处理20min，完成硼元素的推进，在硅片表面形成P掺杂层，同时硅片体内的杂质原子也朝向表面P掺杂层进行迁移和扩散，并固定在表面的P掺杂层中，完成吸杂，此时硅片表面的P掺杂层为吸杂层；Chain high-temperature heat treatment gettering: The silicon wafers coated with boron-containing slurry are transported into the chain-type high-temperature heat treatment gettering functional area through conveying rollers. At this time, the silicon wafers are heat-treated at 500-800°C for 20 minutes through the chain annealing furnace. , complete the advancement of the boron element, and form a P-doped layer on the surface of the silicon wafer. At the same time, the impurity atoms in the silicon wafer also migrate and diffuse toward the surface P-doped layer, and are fixed in the P-doped layer on the surface to complete the gettering. , the P-doped layer on the surface of the silicon wafer is the gettering layer;
链式后清洗：吸杂后的硅片通过传送辊传输进入链式后清洗功能区，采用质量百分比浓度为3%的HF溶液清洗硅片，用于去除硅片表面的氧化层；Chain post-cleaning: The silicon wafers after gettering are transported into the chain post-cleaning functional area through transfer rollers, and HF solution with a concentration of 3% by mass is used to clean the silicon wafers to remove the oxide layer on the surface of the silicon wafers;
（2）将吸杂后的N型硅片进行制绒，制绒的同时去除硅片表面的吸杂层；(2) Texturing the N-type silicon wafer after gettering, and removing the gettering layer on the surface of the silicon wafer while texturing;
（3）在制绒后硅片的正背面沉积本征非晶硅层；(3) Deposit an intrinsic amorphous silicon layer on the front and back of the silicon wafer after texturing;
（4）在本征非晶硅层的正背面沉积掺杂非晶硅层；(4) depositing a doped amorphous silicon layer on the front and back of the intrinsic amorphous silicon layer;
（5）硅片正背面沉积透明导电薄膜；(5) The transparent conductive film is deposited on the front and back of the silicon wafer;
（6）硅片正背面丝网印刷金属电极制成N型高效异质结太阳能电池片。(6) N-type high-efficiency heterojunction solar cells are made by screen-printing metal electrodes on the front and back of the silicon wafer.
值得一提的是，在本发明中，常规异质结太阳能电池的制备工序中的首道工序为制绒，全链式吸杂工序同制绒工序也能够很好地衔接在一起，也可以通过传送装置完成硅片的输出和输入，自动化程度高，进一步减少了人工投入，利于产业化推广应用。It is worth mentioning that in the present invention, the first process in the preparation process of conventional heterojunction solar cells is texturing, and the full-chain gettering process and the texturing process can also be well connected, or The output and input of silicon wafers are completed through the conveying device, and the degree of automation is high, which further reduces the manual input and is conducive to industrialization and application.

Claims (12)

  1. 一种高效异质结太阳能电池的制备方法，其特征在于：在常规异质结太阳能电池制备工序前增加一道吸杂工序，所述吸杂工序通过全链式工艺完成；A preparation method of a high-efficiency heterojunction solar cell, characterized in that: a gettering process is added before the preparation process of a conventional heterojunction solar cell, and the gettering process is completed by a full-chain process;
    所述全链式工艺包括：The full chain process includes:
    对硅片进行链式涂覆吸杂源；Chain coating of gettering sources on silicon wafers;
    及链式高温吸杂。And chain high temperature gettering.
  2. 根据权利要求1所述的制备方法，其特征在于：所述吸杂源为液态源。The preparation method according to claim 1, wherein the gettering source is a liquid source.
  3. 根据权利要求2所述的制备方法，其特征在于：所述液态源可以为磷酸溶液、含磷浆料或含硼浆料中的一种。The preparation method according to claim 2, wherein the liquid source can be one of phosphoric acid solution, phosphorus-containing slurry or boron-containing slurry.
  4. 根据权利要求1所述的制备方法，其特征在于：对所述硅片进行链式涂覆吸杂源之前还包括对所述硅片进行链式前清洗。The preparation method according to claim 1, characterized in that: before the chain coating of the gettering source is performed on the silicon wafer, the method further comprises performing chain pre-cleaning on the silicon wafer.
  5. 根据权利要求4所述的制备方法，其特征在于：所述链式前清洗包括碱液清洗。The preparation method according to claim 4, wherein the chain-type pre-cleaning comprises lye cleaning.
  6. 根据权利要求5所述的制备方法，其特征在于：所述碱液为质量百分比浓度1～3%的NaOH溶液或质量百分比浓度1～3%的KOH溶液。The preparation method according to claim 5, wherein the lye solution is a NaOH solution with a mass percentage concentration of 1-3% or a KOH solution with a mass percentage concentration of 1-3%.
  7. 根据权利要求5所述的制备方法，其特征在于：所述碱液清洗后还包括对所述硅片进行酸液清洗。The preparation method according to claim 5, characterized in that: after the alkaline solution cleaning, the method further comprises performing acid solution cleaning on the silicon wafer.
  8. 根据权利要求7所述的制备方法，其特征在于：所述酸液为质量百分比浓度1～10%的HF溶液。The preparation method according to claim 7, wherein the acid solution is an HF solution with a mass percentage concentration of 1-10%.
  9. 根据权利要求1所述的制备方法，其特征在于：所述链式高温吸杂的温度为500～800℃，时间为2～20min。The preparation method according to claim 1, characterized in that: the temperature of the chain high-temperature gettering is 500-800 DEG C, and the time is 2-20 min.
  10. 根据权利要求1所述的制备方法，其特征在于：所述链式高温吸杂之后还包括对所述硅片进行链式后清洗。The preparation method according to claim 1, characterized in that: after the chain-type high-temperature gettering, further comprises performing chain-type post-cleaning on the silicon wafer.
  11. 根据权利要求10所述的制备方法，其特征在于：所述链式后清洗为质量百分比浓度1～5%的HF溶液清洗。The preparation method according to claim 10, wherein the chain-type post-cleaning is cleaning with HF solution with a mass percentage concentration of 1-5%.
  12. 一种高效异质结太阳能电池，其特征在于，所述高效异质结太阳能电池根据权利要求1-11任一项的制备方法所制成。A high-efficiency heterojunction solar cell, characterized in that the high-efficiency heterojunction solar cell is made according to the preparation method of any one of claims 1-11.
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