WO2022134334A1 - Quantum dot display panel and preparation method therefor - Google Patents

Quantum dot display panel and preparation method therefor Download PDF

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Publication number
WO2022134334A1
WO2022134334A1 PCT/CN2021/082449 CN2021082449W WO2022134334A1 WO 2022134334 A1 WO2022134334 A1 WO 2022134334A1 CN 2021082449 W CN2021082449 W CN 2021082449W WO 2022134334 A1 WO2022134334 A1 WO 2022134334A1
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WIPO (PCT)
Prior art keywords
quantum dot
adhesive layer
patterned
photocurable adhesive
light
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PCT/CN2021/082449
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French (fr)
Chinese (zh)
Inventor
张志宽
高丹鹏
杨丽敏
徐冰
孙小卫
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深圳扑浪创新科技有限公司
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Publication of WO2022134334A1 publication Critical patent/WO2022134334A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • the present application relates to the field of display technology, for example, to a quantum dot display panel and a preparation method thereof.
  • Quantum dot color film is a key component for display devices to achieve full color display with ultra-high color gamut.
  • the related technology is to mix red and green quantum dots together to make a quantum dot color conversion film, and then cooperate with liquid crystal display modules and blue light emitting diodes. (Light Emitting Diode, LED) light source to achieve high color gamut display.
  • LED Light Emitting Diode
  • this scheme has the following problems: 1) It is necessary to use a color filter to filter the red, green and blue light after color conversion, and its luminous efficiency is extremely low; 2) The red and green quantum dots are directly mixed, and the film is During the preparation and use process, the two quantum dots will affect each other, resulting in performance degradation and poor reliability of the diaphragm; 3) The application field is limited, and it cannot match the active light-emitting type Micro-LED and Organic Light-Emitting Diode (OLED, OLED). ) display device usage.
  • the present application provides a quantum dot display panel and a preparation method thereof, so as to improve the luminous efficiency, avoid mutual interference of red, green and blue quantum dots, and improve the compatibility with various backlight sources.
  • a quantum dot display panel comprising:
  • the quantum dot color filter laminated structure includes:
  • a first medium substrate located on the side of the first water and oxygen barrier layer away from the ultraviolet backlight module;
  • the first patterned quantum dot photocurable adhesive layer is sequentially laminated in the plurality of light-transmitting regions between the plurality of strip-shaped retaining wall structures from the side of the first medium substrate away from the ultraviolet light backlight module.
  • the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are in the first water and oxygen barrier layer
  • the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are respectively red light Any one of the patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer and the blue light
  • a second water and oxygen barrier layer located on the side of the third encapsulation adhesive layer away from the ultraviolet backlight module.
  • a preparation method of a quantum dot display panel comprising:
  • a plurality of strip-shaped retaining wall structures are formed on the side of the first dielectric substrate away from the ultraviolet backlight module, the plurality of retaining wall structures extend along the first direction and are arranged in the second direction, and the first The two directions are perpendicular to the first direction, and the gap between adjacent retaining wall structures constitutes a light-transmitting area;
  • Laminated first patterned quantum dot photocurable adhesives are sequentially formed in the plurality of light-transmitting regions between the plurality of strip-shaped retaining wall structures from the side of the first dielectric substrate away from the ultraviolet light backlight module.
  • the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are in the first water and oxygen barrier
  • the vertical projections on the layers do not overlap;
  • the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are respectively red Any one of the photo-patterned quantum dot photo-curable adhesive layer, the green light-patterned
  • a second water and oxygen barrier layer is formed on the side of the third encapsulation adhesive layer away from the ultraviolet backlight module.
  • FIG. 1 is a schematic cross-sectional structure diagram of a quantum dot display panel according to an embodiment of the present application
  • FIG. 2 is a schematic top-view structural diagram of a quantum dot color filter laminated structure provided by an embodiment of the present application
  • FIG. 3 is a schematic top-view structural diagram of another quantum dot color filter laminated structure provided by an embodiment of the present application.
  • FIG. 4 is a schematic flowchart of a method for manufacturing a quantum dot display panel according to an embodiment of the present application
  • FIG. 5 is a schematic diagram of a process for forming a retaining wall structure according to an embodiment of the present application
  • FIG. 6 is a schematic diagram of a preparation process of a patterned quantum dot photocurable adhesive layer provided in an embodiment of the present application
  • FIG. 7 is a schematic diagram of a process for forming a water-oxygen barrier layer provided by an embodiment of the present application.
  • FIG. 8 is a schematic diagram of a process for forming an ultraviolet light reflective layer provided by an embodiment of the present application.
  • FIG. 9 is a schematic flowchart of forming a quantum dot color filter stack provided by an embodiment of the present application.
  • the quantum dot display panel includes an ultraviolet backlight module and a quantum dot color film laminated structure located on the light-emitting surface of the ultraviolet backlight module.
  • the quantum dot color film laminated structure includes a first water and oxygen barrier layer, a second A dielectric substrate, a plurality of strip-shaped retaining wall structures, a first patterned quantum dot photocurable adhesive layer, a first encapsulation adhesive layer, a second dielectric substrate, a second patterned quantum dot photocurable adhesive layer, and a second encapsulation Adhesive layer, third dielectric substrate, third patterned quantum dot photocurable adhesive layer, third encapsulation adhesive layer and second water and oxygen barrier layer, wherein the first patterned quantum dot photocurable adhesive layer, the second patterned The vertical projections of the quantum dot photo-curable adhesive layer and the third patterned quantum dot photo-curable adhesive layer on the first water and oxygen barrier layer do not overlap, and the first patterned quantum dot photo-curable adhesive layer and the second
  • the cured adhesive layer and the third patterned quantum dot photocurable adhesive layer are respectively any of the red light patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer and the blue light patterned quantum dot photocurable adhesive layer.
  • One, and not the same, no color filter is used, which improves the luminous efficiency, and the red, green, and blue quantum dots are arranged in different layers, so that the quantum dots will not interfere with each other, which improves the light output performance of the display panel, and is compatible with A variety of backlight sources have broadened the application field of display panels.
  • FIG. 1 is a schematic cross-sectional structure diagram of a quantum dot display panel according to an embodiment of the present application.
  • the display panel includes: an ultraviolet light backlight module 10 and a quantum dot color filter laminated structure 11 located on the light-emitting surface of the ultraviolet light backlight module 10 , wherein the quantum dot color filter laminated structure 11 includes : the first water-oxygen barrier layer 12 located on the light-emitting surface of the ultraviolet backlight module 10 , the first medium substrate 13 located on the first water-oxygen barrier layer 12 , the plurality of strip-shaped barriers located on the first medium substrate 13
  • the wall structure 14, a plurality of retaining wall structures 14 extend along the first direction and are arranged along the second direction, the second direction is perpendicular to the first direction, and the gap between the adjacent retaining wall structures 14 constitutes the light-transmitting area Aa, which is stacked in turn.
  • the third dielectric substrate 20, the third patterned quantum dot photocurable adhesive layer 21 and the third encapsulation adhesive layer 22, the first patterned quantum dot photocurable adhesive layer 15, the second patterned quantum dot photocurable adhesive layer 18 and the vertical projections of the third patterned quantum dot photocurable adhesive layer 21 on the first water and oxygen barrier layer 12 do not overlap, the first patterned quantum dot photocurable adhesive layer 15 and the second patterned quantum dot photocurable adhesive
  • the layer 18 and the third patterned quantum dot photocurable adhesive layer 21 are respectively any of the red light patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer and the blue light patterned quantum dot photocurable adhesive layer.
  • FIG. 1 only uses two groups of pixel units separated by three retaining wall structures 14 for illustration but not limitation. In other implementations of this embodiment, the number of retaining wall structures 14 may be three or more than three. The number of pixel units is determined by the number of retaining wall structures 14 .
  • the ultraviolet light backlight module 10 includes an ultraviolet light backlight source substrate 101 and a plurality of red light quantum dots in the first patterned quantum dot photocurable adhesive layer 15 and the second patterned quantum dot photocurable adhesive layer 18 .
  • the green light quantum dots and the blue light quantum dots in the third patterned quantum dot photocurable adhesive layer 21 correspond to the ultraviolet light excitation units 102 respectively, and the ultraviolet light excitation units 102 can be directly formed on the ultraviolet light backlight source substrate 101 .
  • the ultraviolet light backlight module 10 includes a plurality of ultraviolet light excitation units 102 arranged in an array to realize pixel-level backlight.
  • the ultraviolet light excitation units 102 can be, for example, LED light sources, OLED light sources, Mini-LED light sources, Micro-LED light sources, and plasma light sources. Or a semiconductor exciter, etc., the peak wavelength of the light emitted by the backlight source in the ultraviolet light backlight module 10 can be, for example, ultraviolet light of 230-395 nm, which can excite the quantum dots on the multi-layer quantum dot (light-curing adhesive layer) gel layer. , to achieve full-color display.
  • first water and oxygen barrier layer 12 is arranged on the light-emitting surface of the ultraviolet backlight module 10 and the second water and oxygen barrier layer 23 is arranged on the third encapsulation adhesive layer 22, which can block the external water and oxygen from affecting the quantum dot color film laminated structure erosion.
  • the vertical projections of the first patterned quantum dot photocurable adhesive layer 15 , the second patterned quantum dot photocurable adhesive layer 18 and the third patterned quantum dot photocurable adhesive layer 21 on the first water-oxygen barrier layer 12 are different.
  • the ultraviolet light backlight module 10 emits ultraviolet light
  • the ultraviolet light can directly reach a plurality of patterned quantum dot photocurable adhesive layers to excite the quantum dots to emit corresponding light.
  • a red quantum dot, a green quantum dot and a blue quantum dot constitute a pixel unit structure, and the strip-shaped retaining wall structure 14 arranged between adjacent pixel unit structures can connect the adjacent pixel unit structures.
  • the pixel unit structure is separated to avoid the phenomenon of optical crosstalk and improve the resolution of the display device.
  • the quantum dot display panel includes an ultraviolet light backlight module and a quantum dot color film laminated structure located on the light-emitting surface of the ultraviolet light backlight module, and the quantum dot color film laminated structure includes a first water-oxygen barrier layer , the first dielectric substrate, a plurality of strip-shaped retaining wall structures, the first patterned quantum dot photocurable adhesive layer, the first encapsulation adhesive layer, the second dielectric substrate, the second patterned quantum dot photocurable adhesive layer, the first Two encapsulation adhesive layers, a third dielectric substrate, a third patterned quantum dot photocurable adhesive layer, a third encapsulation adhesive layer and a second water and oxygen barrier layer, wherein the first patterned quantum dot photocurable adhesive layer, the second The vertical projections of the patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer on the first water and oxygen barrier layer do not overlap, and the first patterned quantum dot photocurable adhesive layer and the
  • the dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are respectively the red light patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer and the blue light patterned quantum dot photocurable adhesive layer.
  • the first patterned quantum dot photocurable adhesive layer 15 is a red light patterned quantum dot photocurable adhesive layer
  • the second patterned quantum dot photocurable adhesive layer 18 is a green light patterned quantum dot photocurable adhesive layer.
  • Curing adhesive layer, the third patterned quantum dot photocurable adhesive layer 21 is a blue light patterned quantum dot photocurable adhesive layer.
  • the three-layer quantum dot gel layer is arranged according to the wavelength of quantum dots, wherein the emission wavelength of the red quantum dot gel layer is generally 620nm-660nm, the emission wavelength of the green quantum dot gel layer is 520nm-540nm, and the emission wavelength of the blue quantum dot gel layer is 520nm-540nm.
  • the emission wavelength of the adhesive layer is 440nm-470nm.
  • the ultraviolet light emitted from the ultraviolet backlight module 10 first passes through the red quantum dot gel layer with a longer wavelength, and finally passes through the blue quantum dot gel layer with a shorter wavelength, so as to reduce the long wavelength. Reabsorption of short-wavelength quantum dot gel layers by wavelength quantum dot gel layers.
  • the arrangement of the quantum dot gel layer can improve the luminous efficiency excited by ultraviolet light as a backlight source, thereby reducing the re-emission of the long-wavelength patterned quantum dot photo-curable adhesive layer to the short-wavelength patterned quantum dot photo-curable adhesive layer. Absorption, improve the overall luminous efficiency.
  • the quantum dot display panel further includes an ultraviolet light reflection layer 24 , and the ultraviolet light reflection layer 24 is located between the third encapsulation adhesive layer 22 and the second water and oxygen barrier layer 23 in the light transmission area Aa.
  • the ultraviolet light reflecting layer 24 in this embodiment can selectively transmit red light and green light, and at the same time reflect ultraviolet light with a peak wavelength of 230-395 nm.
  • the ultraviolet light backlight module 10 emits ultraviolet light , Excite the red quantum dots, green quantum dots and blue quantum dots on the red light patterned quantum dot photocurable adhesive layer, green light patterned quantum dot photocurable adhesive layer and blue light patterned quantum dot photocurable adhesive layer.
  • the excess UV light passing through the red light patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer and the blue light patterned quantum dot photocurable adhesive layer will be reflected by the UV light
  • the layer 24 reflects, so that the excess ultraviolet light is reflected to continue to excite the red, green, and blue quantum dots, and the waste of ultraviolet light is avoided.
  • FIG. 2 is a schematic top-view structural diagram of a quantum dot color filter stack structure provided by an embodiment of the present application.
  • the first patterned quantum dot photocurable adhesive layer 15 includes a plurality of strip-shaped first quantum dot gel layers 41 extending along the first direction y and arranged along the second direction x.
  • the dot photo-curable adhesive layer 18 includes a plurality of strip-shaped second quantum dot gel layers 42 extending along the first direction y and arranged along the second direction x
  • the third patterned quantum dot photo-curable adhesive layer 21 includes a plurality of strip-shaped quantum dot photo-curable adhesive layers 42 along the first direction y.
  • the quantum dot materials on the first patterned quantum dot photocurable adhesive layer 15 , the second patterned quantum dot photocurable adhesive layer 18 and the third patterned quantum dot photocurable adhesive layer 21 may be distributed in stripes, and each The line width of the quantum dot material on the quantum dot gel layer is equivalent to the width of the red sub-pixel point or the green sub-pixel point or the blue sub-pixel point.
  • FIG. 3 is a schematic top-view structural diagram of yet another quantum dot color filter stack structure provided by an embodiment of the present application.
  • the first patterned quantum dot photocurable adhesive layer 15 includes a plurality of first quantum dot gel arrays 31 extending along the first direction y and arranged along the second direction x.
  • the first quantum dot gel arrays 31 31 may include a plurality of first quantum dot gel blocks 311 arranged along the first direction y
  • the second patterned quantum dot photocurable adhesive layer 18 includes a plurality of first quantum dot gel blocks 311 extending along the first direction y and arranged along the second direction x.
  • the second quantum dot gel array 32 may include a plurality of second quantum dot gel blocks 321 arranged along the first direction y
  • the third patterned quantum dot photocurable adhesive layer 21 includes a plurality of The third quantum dot gel column 33 extending along the first direction y and arranged along the second direction x
  • the third quantum dot gel column 33 may include a plurality of third quantum dot gel blocks 331 arranged along the first direction y
  • a first quantum dot gel column 31 , a second quantum dot gel column 32 and a third quantum dot gel column 33 are arranged in the light-transmitting area Aa between any adjacent retaining wall structures 14 .
  • the different patterned quantum dot photocurable adhesive layers include a plurality of quantum dot gel columns extending along the first direction and arranged along the second direction, and the quantum dot gel column includes a plurality of quantum dots each arranged along the first direction
  • the size of each block is equivalent to the size of the red sub-pixel point or the green sub-pixel point or the blue sub-pixel point.
  • the ultraviolet light excitation unit 102 emits When the ultraviolet light is emitted, the emitted light projected on the quantum dot gel layer perfectly falls on each quantum dot, which better improves the light output performance of the display panel.
  • FIG. 4 is a schematic flowchart of a method for manufacturing a quantum dot display panel according to an embodiment of the present application. This method is applicable to the preparation of the quantum dot display panel in any of the above embodiments. As shown in FIG. 4 , the method includes the following:
  • a first water and oxygen barrier layer is formed on the first medium substrate by arranging a UV backlight module and a first medium substrate, and the first water and oxygen barrier layer is installed on the UV backlight module.
  • a plurality of strip-shaped blocking wall structures are formed on the side of the first medium substrate away from the ultraviolet light backlight module, and the plurality of blocking wall structures extend along the first direction and are arranged along the second direction, and the second The direction is perpendicular to the first direction, the gaps between the adjacent retaining wall structures constitute a light-transmitting area, and in the light-transmitting area, the first patterned quantum dot photocurable adhesive layer, the first an encapsulation adhesive layer, a second dielectric substrate, a second patterned quantum dot photocurable adhesive layer, a second encapsulation adhesive layer, a third dielectric substrate, a third patterned quantum dot photocurable adhesive layer, and a third encapsulation adhesive layer,
  • Either the adhesive layer or the blue-light patterned quantum dot photocurable adhesive layer is different, no color filter is used, and the luminous efficiency is improved, and the red, green, and blue quantum dots are arranged in different layers, and the quantum dots are arranged in different layers. They will not interfere with each other, improve the light output performance of the display panel, and are compatible with a variety of backlight sources, thus expanding the application field of the display panel.
  • FIG. 5 is a schematic diagram of a process of forming a retaining wall structure according to an embodiment of the present application. As shown in FIG. 5 , an ultraviolet backlight module 10 and a first medium substrate 13 are provided first.
  • a layer of water and oxygen barrier material is deposited on the lower surface of the first dielectric substrate 13 by a deposition method to form the first water and oxygen barrier layer 12, which can effectively prevent moisture and oxygen from entering the quantum dot color filter stack structure during light emission. This in turn degrades the device.
  • a barrier material adhesive film 141 is coated on the first medium substrate 13 to control the light source located in the light-transmitting area Aa in the ultraviolet backlight module 10 to emit ultraviolet light, so as to dissolve the corresponding area.
  • the retaining wall material adhesive film 141 is removed, and the dissolved retaining wall material adhesive film 141 is removed to form a plurality of strip-shaped retaining wall structures 14 .
  • the blocking wall structure 14 is made of an opaque material, and the purpose is to separate adjacent pixel structure units to avoid the phenomenon of light crosstalk.
  • the material of the blocking wall structure 14 is not limited, as long as it can block light. can work.
  • FIG. 6 is a schematic diagram of a preparation process of a patterned quantum dot photocurable adhesive layer according to an embodiment of the present application.
  • the retaining wall structure 14 that is, on the basis of FIG. 5 , continue to use the spraying method to spray the red light quantum dot photocurable glue 151 on the first dielectric substrate 13 to open the first patterned quantum dots.
  • the ultraviolet light excitation unit 102 corresponding to the red quantum dots in the spot light curing adhesive layer 15 is cured, and the red light quantum dot glue 151 directly above it is cured, and the red light quantum dot light curing adhesive that is not irradiated by the ultraviolet light excitation unit 102 is cleaned.
  • the first patterned quantum dot photocurable adhesive layer 15 is obtained, that is, the red light patterned quantum dot photocurable adhesive layer, followed by coating encapsulation glue on the first patterned quantum dot photocurable adhesive layer 15, and heating and curing to obtain the first
  • An encapsulating adhesive layer 16 is continuously heated and cured on the first encapsulating adhesive layer 16 to obtain a second dielectric substrate 17.
  • the second patterned quantum dot photocurable adhesive layer 18 the second The encapsulation adhesive layer 19 , the third dielectric substrate 20 , the third patterned quantum dot photocurable adhesive layer 21 , and the third encapsulation adhesive layer 22 , the preparation method of each patterned quantum dot photocurable adhesive layer is the same, and will not be repeated here. .
  • the encapsulant layer can be filled with the whole layer of encapsulant, which can play the role of dustproof, waterproof and heat dissipation.
  • Common encapsulant mainly include epoxy encapsulant, silicone encapsulant, polyurethane encapsulant and ultraviolet light curing encapsulation.
  • the encapsulation adhesive in the encapsulation adhesive layer can be cured by ultraviolet light.
  • FIG. 7 is a schematic diagram of a process for forming a water-oxygen barrier layer according to an embodiment of the present application.
  • a layer of water and oxygen barrier material is deposited on the upper surface of the third encapsulation adhesive layer 22 to form the second water and oxygen barrier layer 23 , so that the second water and oxygen barrier layer 23 and the first water and oxygen barrier layer 12 are respectively located at The upper and lower sides of the quantum dot color filter stack are correspondingly set.
  • FIG. 8 is a schematic diagram of a process of forming an ultraviolet light reflection layer provided by an embodiment of the present application. As shown in FIG. 8 , before forming the second water-oxygen barrier layer 23 on the third encapsulation adhesive layer 22 , the method further includes: forming an ultraviolet light reflection layer 24 on the third encapsulation layer 22 .
  • an ultraviolet light reflecting layer 24 is formed on the third encapsulation adhesive layer 22 , and a second water and oxygen barrier layer 23 is formed on the ultraviolet light reflecting layer to obtain the structure shown in FIG. 1 .
  • FIG. 9 is a schematic flowchart of forming a quantum dot color filter stack provided by an embodiment of the present application.
  • a first patterned quantum dot photocurable adhesive layer, a first encapsulation adhesive layer, a second dielectric substrate, and a second pattern are sequentially formed on the first dielectric substrate in the light-transmitting area.
  • the method of chemically synthesizing the quantum dot photocurable adhesive layer, the second encapsulation adhesive layer, the third dielectric substrate, the third patterned quantum dot photocurable adhesive layer and the third encapsulation adhesive layer includes the following steps:
  • preparing the quantum dot gel includes: preparing a quantum dot solution by a solution method, adding a glue monomer to the quantum dot solution to form a glue mixture, adding an ultraviolet photoinitiator to the glue mixture, and stirring to form a quantum dot solution. Dot gel.
  • the method for preparing a quantum dot solution by a solution method includes: preparing a quantum dot core material solution by a solution method, adding a coating layer material to the quantum dot core material to form a core-shell structure quantum dot material solution, and adding a core-shell structure quantum dot material solution.
  • the surface ligand material solution is added to the material solution, and the quantum dot solution is obtained by centrifugation and purification.
  • the quantum dot solution is prepared by solution method, which can include metal organic synthesis method, direct aqueous phase synthesis method, hot injection synthesis method and anti-solvent synthesis method.
  • the solution method is a growth method in which the precipitate is separated from its solution to form a crystal.
  • the quantum dot core material solution includes an A x My E z system, wherein the A element is barium (Barium, Ba), silver (Argentum, Ag), sodium (Natrium, Na), iron (Ferrum, Fe) , Indium (Indium, In), Cadmium (Cadmium, Cd), Zinc (Zinc, Zn), Gallium (Gallium, Ga), Magnesium (Magnesium, Mg), Lead (Plumbum, Pb), Cesium (Caesium, Cs)
  • a kind of M element is sulfur (Sulfur, S), chlorine (Chlorine, Cl), oxygen (Oxygen, O), arsenic (Arsenic, As), nitrogen (Nitrogen, N), phosphorus (Phosphorus, P), selenium One of (Selenium, Se), tellurium (Tellurium, Te), titanium (Titanium, Ti), zirconium (Zirconium, Zr), Pb, E element is S, As, Se
  • the value range of x is 0.3-2
  • the value range of y is 0.5-3
  • the value range of z is 0-4.
  • the quantum dot core material When the quantum dot core material is excited by an ultraviolet light source, it will emit excitation fluorescence with a unique wavelength, and the emitted fluorescence spectrum is determined by the chemical composition and particle size of the quantum dot core material. Due to the quantum size effect, as the particle size of the core material of quantum dots increases, the fluorescence spectrum emitted by the material with the same chemical composition is red-shifted from blue light to green light and then to red light.
  • the core material of quantum dots emitting red light, the core material of quantum dots emitting green light and the core material of quantum dots emitting blue light can be of the same chemical composition but the value ranges of x, y and z are adjusted to synthesize different particle sizes.
  • the core material of quantum dots can also be core materials of quantum dots with different chemical compositions.
  • the quantum dot core material solution includes one or a composite material of at least two of cadmium selenide CdSe, indium phosphide InP and bromine lead cesium CsPbBr3.
  • CdSe quantum dots when reducing from 10 nm to 2 nm, the color of light emitted by the cadmium selenide quantum dots changes from red to blue, and when the size of the cadmium selenide quantum dots is greater than or equal to 2 nm When the size of the cadmium selenide quantum dot is greater than or equal to 5nm and less than 8nm, it emits green light; when the size of the cadmium selenide quantum dot is greater than or equal to 8nm and less than 10nm, it emits red light. Light.
  • the core materials of quantum dots formed by different chemical groups are formed, and the luminescence of different colors is produced.
  • the coating material includes one or a combination of the following materials: organic polymer solution, inorganic oxide, metal oxide, simple metal, and alloy material.
  • the coating material can be cadmium sulfide CdS, zinc selenide ZnSe, sulfur cadmium zinc ZnCdS2, zinc sulfide ZnS, lead sulfide PbS, zinc oxide ZnO, aluminum oxide Al2O3, silicon dioxide SiO2, gold (Aurum, Au) element, Ag Element, copper (Cuprum, Cu) element, etc.
  • the coating material is coated on the quantum dot material to form a core-shell structure quantum dot material.
  • the surface ligand material can be a high molecular polymer, which has good compatibility with the glue monomer.
  • the surface ligand material reacts and bonds with the quantum dot shell material.
  • Ultraviolet photoinitiators are compounds that absorb a certain wavelength of energy in the ultraviolet region to generate free radicals, cations, etc., thereby initiating polymerization and crosslinking of monomers. Ray, UV) coatings, UV inks, etc. Adding an ultraviolet photoinitiator to the obtained glue mixture and stirring it, the quantum dot photocurable glue can be obtained.

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Abstract

A quantum dot display panel, comprising an ultraviolet backlight module and a quantum dot color film laminated structure which is located on a light-emitting surface of the ultraviolet backlight module. The quantum dot color film laminated structure comprises: a first water-oxygen barrier layer located on the light-emitting surface of the ultraviolet backlight module; a first dielectric substrate located on a side of the first water-oxygen barrier layer away from the ultraviolet backlight module; a plurality of strip-shaped retaining wall structures located on a side of the first dielectric substrate away from the ultraviolet backlight module; a first patterned quantum dot photocured adhesive layer, a first encapsulation adhesive layer, a second dielectric substrate, a second patterned quantum dot photocured adhesive layer, a second encapsulation adhesive layer, a third dielectric substrate, a third patterned quantum dot photocured adhesive layer, and a third encapsulation adhesive layer which are sequentially stacked in a plurality of light-transmitting regions between the plurality of strip-shaped retaining wall structures from one side of the first dielectric substrate away from the ultraviolet backlight module; and a second water-oxygen barrier layer located on a side of the third encapsulation adhesive layer away from the ultraviolet backlight module. In addition, also provided is a method for preparing a quantum dot display panel.

Description

量子点显示面板及其制备方法Quantum dot display panel and preparation method thereof
本申请要求在2020年12月25日提交中国专利局、申请号为202011563423.6的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。This application claims the priority of the Chinese Patent Application No. 202011563423.6 filed with the China Patent Office on December 25, 2020, the entire contents of which are incorporated herein by reference.
技术领域technical field
本申请涉及显示技术领域，例如涉及一种量子点显示面板及其制备方法。The present application relates to the field of display technology, for example, to a quantum dot display panel and a preparation method thereof.
背景技术Background technique
量子点彩膜是显示器件实现超高色域全彩显示的关键部件，相关技术是将红、绿量子点混合在一起，做成量子点色转换膜，再配合液晶显示模组、蓝光发光二极管(Light Emitting Diode，LED)光源，实现高色域显示。但该方案存在如下问题：1)需要使用彩色滤光片对色转换后的红、绿、蓝光进行过滤，其发光效率极低；2)红、绿两种量子点直接混合，在膜片的制备和使用过程中两种量子点会相互影响，造成性能劣化，膜片的可靠性差；3)应用领域局限，不能匹配主动发光型的Micro-LED、有机发光二极管(Organic Light-Emitting Diode，OLED)显示器件使用。Quantum dot color film is a key component for display devices to achieve full color display with ultra-high color gamut. The related technology is to mix red and green quantum dots together to make a quantum dot color conversion film, and then cooperate with liquid crystal display modules and blue light emitting diodes. (Light Emitting Diode, LED) light source to achieve high color gamut display. However, this scheme has the following problems: 1) It is necessary to use a color filter to filter the red, green and blue light after color conversion, and its luminous efficiency is extremely low; 2) The red and green quantum dots are directly mixed, and the film is During the preparation and use process, the two quantum dots will affect each other, resulting in performance degradation and poor reliability of the diaphragm; 3) The application field is limited, and it cannot match the active light-emitting type Micro-LED and Organic Light-Emitting Diode (OLED, OLED). ) display device usage.
发明内容SUMMARY OF THE INVENTION
本申请提供一种量子点显示面板及其制备方法，以提高发光效率，避免红、绿、蓝量子点相互干扰，提高对多种背光源的兼容性。The present application provides a quantum dot display panel and a preparation method thereof, so as to improve the luminous efficiency, avoid mutual interference of red, green and blue quantum dots, and improve the compatibility with various backlight sources.
提供了一种量子点显示面板，该显示面板包括：Provided is a quantum dot display panel comprising:
紫外光背光模组以及位于所述紫外光背光模组出光面的量子点彩膜叠层结构；an ultraviolet light backlight module and a quantum dot color film laminated structure on the light-emitting surface of the ultraviolet light backlight module;
其中，所述量子点彩膜叠层结构包括：Wherein, the quantum dot color filter laminated structure includes:
位于所述紫外光背光模组出光面的第一水氧阻隔层；a first water-oxygen barrier layer on the light-emitting surface of the ultraviolet backlight module;
位于所述第一水氧阻隔层远离所述紫外光背光模组一侧的第一介质基材；a first medium substrate located on the side of the first water and oxygen barrier layer away from the ultraviolet backlight module;
位于所述第一介质基材远离所述紫外光背光模组一侧的多个条状挡墙结构，所述多个挡墙结构沿第一方向延伸且沿第二方向排列，所述第二方向垂直于所述第一方向，相邻挡墙结构之间的间隙构成透光区；A plurality of strip-shaped retaining wall structures located on the side of the first medium substrate away from the ultraviolet backlight module, the plurality of retaining wall structures extend along a first direction and are arranged in a second direction, and the second The direction is perpendicular to the first direction, and the gap between adjacent retaining wall structures constitutes a light-transmitting area;
从所述第一介质基材远离所述紫外光背光模组一侧依次层叠于所述多个条状挡墙结构之间的多个透光区内的第一图案化量子点光固化胶层、第一封装胶 层、第二介质基材、第二图案化量子点光固化胶层、第二封装胶层、第三介质基材、第三图案化量子点光固化胶层和第三封装胶层；所述第一图案化量子点光固化胶层、所述第二图案化量子点光固化胶层和所述第三图案化量子点光固化胶层在所述第一水氧阻隔层上的垂直投影不交叠；所述第一图案化量子点光固化胶层、所述第二图案化量子点光固化胶层和所述第三图案化量子点光固化胶层分别为红光图案化量子点光固化胶层、绿光图案化量子点光固化胶层和蓝光图案化量子点光固化胶层中的任一种，且不相同；The first patterned quantum dot photocurable adhesive layer is sequentially laminated in the plurality of light-transmitting regions between the plurality of strip-shaped retaining wall structures from the side of the first medium substrate away from the ultraviolet light backlight module. , the first encapsulation adhesive layer, the second dielectric substrate, the second patterned quantum dot photocurable adhesive layer, the second encapsulation adhesive layer, the third dielectric substrate, the third patterned quantum dot photocurable adhesive layer and the third package adhesive layer; the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are in the first water and oxygen barrier layer The vertical projections on it do not overlap; the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are respectively red light Any one of the patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer and the blue light patterned quantum dot photocurable adhesive layer, and they are not the same;
位于所述第三封装胶层远离所述紫外光背光模组一侧的第二水氧阻隔层。A second water and oxygen barrier layer located on the side of the third encapsulation adhesive layer away from the ultraviolet backlight module.
还提供了一种量子点显示面板的制备方法，该方法包括：Also provided is a preparation method of a quantum dot display panel, the method comprising:
提供紫外光背光模组和第一介质基材；Provide ultraviolet light backlight module and first medium substrate;
在所述第一介质基材上形成第一水氧阻隔层；forming a first water and oxygen barrier layer on the first dielectric substrate;
将所述第一水氧阻隔层安装于所述紫外光背光模组的出光面；installing the first water-oxygen barrier layer on the light-emitting surface of the ultraviolet backlight module;
在所述第一介质基材远离所述紫外光背光模组的一侧形成多个条状挡墙结构，所述多个挡墙结构沿第一方向延伸且沿第二方向排列，所述第二方向垂直于所述第一方向，相邻挡墙结构之间的间隙构成透光区；A plurality of strip-shaped retaining wall structures are formed on the side of the first dielectric substrate away from the ultraviolet backlight module, the plurality of retaining wall structures extend along the first direction and are arranged in the second direction, and the first The two directions are perpendicular to the first direction, and the gap between adjacent retaining wall structures constitutes a light-transmitting area;
在所述多个条状挡墙结构之间的多个透光区内从所述第一介质基材远离所述紫外光背光模组一侧依次形成层叠的第一图案化量子点光固化胶层、第一封装胶层、第二介质基材、第二图案化量子点光固化胶层、第二封装胶层、第三介质基材、第三图案化量子点光固化胶层和第三封装胶层；所述第一图案化量子点光固化胶层、所述第二图案化量子点光固化胶层和所述第三图案化量子点光固化胶层在所述第一水氧阻隔层上的垂直投影不交叠；所述第一图案化量子点光固化胶层、所述第二图案化量子点光固化胶层和所述第三图案化量子点光固化胶层分别为红光图案化量子点光固化胶层、绿光图案化量子点光固化胶层和蓝光图案化量子点光固化胶层中的任一种，且不相同；Laminated first patterned quantum dot photocurable adhesives are sequentially formed in the plurality of light-transmitting regions between the plurality of strip-shaped retaining wall structures from the side of the first dielectric substrate away from the ultraviolet light backlight module. layer, the first encapsulation adhesive layer, the second dielectric substrate, the second patterned quantum dot photocurable adhesive layer, the second encapsulation adhesive layer, the third dielectric substrate, the third patterned quantum dot photocurable adhesive layer, and the third encapsulation adhesive layer; the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are in the first water and oxygen barrier The vertical projections on the layers do not overlap; the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are respectively red Any one of the photo-patterned quantum dot photo-curable adhesive layer, the green light-patterned quantum dot photo-curable adhesive layer, and the blue-light patterned quantum dot photo-curable adhesive layer, and they are not the same;
在所述第三封装胶层远离所述紫外光背光模组一侧形成第二水氧阻隔层。A second water and oxygen barrier layer is formed on the side of the third encapsulation adhesive layer away from the ultraviolet backlight module.
附图说明Description of drawings
图1为本申请实施例提供的一种量子点显示面板的剖面结构示意图；FIG. 1 is a schematic cross-sectional structure diagram of a quantum dot display panel according to an embodiment of the present application;
图2为本申请实施例提供的一种量子点彩膜叠层结构的俯视结构示意图；FIG. 2 is a schematic top-view structural diagram of a quantum dot color filter laminated structure provided by an embodiment of the present application;
图3为本申请实施例提供的又一种量子点彩膜叠层结构的俯视结构示意图；FIG. 3 is a schematic top-view structural diagram of another quantum dot color filter laminated structure provided by an embodiment of the present application;
图4为本申请实施例提供的一种量子点显示面板的制备方法的流程示意图；4 is a schematic flowchart of a method for manufacturing a quantum dot display panel according to an embodiment of the present application;
图5为本申请实施例提供的一种形成挡墙结构的过程示意图；5 is a schematic diagram of a process for forming a retaining wall structure according to an embodiment of the present application;
图6为本申请实施例提供的一种图案化量子点光固化胶层制备过程示意图；6 is a schematic diagram of a preparation process of a patterned quantum dot photocurable adhesive layer provided in an embodiment of the present application;
图7为本申请实施例提供的一种形成水氧阻隔层的过程示意图；7 is a schematic diagram of a process for forming a water-oxygen barrier layer provided by an embodiment of the present application;
图8为本申请实施例提供的一种形成紫外光反射层的过程示意图；8 is a schematic diagram of a process for forming an ultraviolet light reflective layer provided by an embodiment of the present application;
图9为本申请实施例提供的一种形成量子点彩膜叠层的流程示意图。FIG. 9 is a schematic flowchart of forming a quantum dot color filter stack provided by an embodiment of the present application.
具体实施方式Detailed ways
下面结合附图对本申请具体实施例进行描述。Specific embodiments of the present application will be described below with reference to the accompanying drawings.
以下结合附图及实施例，对依据本申请提出的一种量子点显示面板及其制备方法的具体实施方式进行说明。The specific implementations of a quantum dot display panel and a manufacturing method thereof according to the present application will be described below with reference to the accompanying drawings and embodiments.
本申请实施例提供的量子点显示面板包括紫外光背光模组以及位于紫外光背光模组出光面的量子点彩膜叠层结构，量子点彩膜叠层结构包括第一水氧阻隔层、第一介质基材、多个条状挡墙结构、第一图案化量子点光固化胶层、第一封装胶层、第二介质基材、第二图案化量子点光固化胶层、第二封装胶层、第三介质基材、第三图案化量子点光固化胶层、第三封装胶层以及第二水氧阻隔层，其中，第一图案化量子点光固化胶层、第二图案化量子点光固化胶层和第三图案化量子点光固化胶层在第一水氧阻隔层上的垂直投影不交叠，第一图案化量子点光固化胶层、第二图案化量子点光固化胶层和第三图案化量子点光固化胶层分别为红光图案化量子点光固化胶层、绿光图案化量子点光固化胶层和蓝光图案化量子点光固化胶层中的任一种，且不相同，未使用彩色滤光片，提高了发光效率，且红、绿、蓝量子点异层设置，量子点之间不会相互干扰，提升了显示面板的出光性能，且兼容多种背光源，扩宽了显示面板的应用领域。The quantum dot display panel provided by the embodiment of the present application includes an ultraviolet backlight module and a quantum dot color film laminated structure located on the light-emitting surface of the ultraviolet backlight module. The quantum dot color film laminated structure includes a first water and oxygen barrier layer, a second A dielectric substrate, a plurality of strip-shaped retaining wall structures, a first patterned quantum dot photocurable adhesive layer, a first encapsulation adhesive layer, a second dielectric substrate, a second patterned quantum dot photocurable adhesive layer, and a second encapsulation Adhesive layer, third dielectric substrate, third patterned quantum dot photocurable adhesive layer, third encapsulation adhesive layer and second water and oxygen barrier layer, wherein the first patterned quantum dot photocurable adhesive layer, the second patterned The vertical projections of the quantum dot photo-curable adhesive layer and the third patterned quantum dot photo-curable adhesive layer on the first water and oxygen barrier layer do not overlap, and the first patterned quantum dot photo-curable adhesive layer and the second patterned quantum dot photo-curable adhesive layer do not overlap. The cured adhesive layer and the third patterned quantum dot photocurable adhesive layer are respectively any of the red light patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer and the blue light patterned quantum dot photocurable adhesive layer. One, and not the same, no color filter is used, which improves the luminous efficiency, and the red, green, and blue quantum dots are arranged in different layers, so that the quantum dots will not interfere with each other, which improves the light output performance of the display panel, and is compatible with A variety of backlight sources have broadened the application field of display panels.
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行描述。The technical solutions in the embodiments of the present application will be described below with reference to the accompanying drawings in the embodiments of the present application.
本申请结合示意图进行描述，在说明本申请实施例时，为便于说明，表示装置器件结构的示意图并非按照一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本申请保护的范围。此外，在实际制作中应包含长度、宽度以及高度的三维空间尺寸。The present application is described in conjunction with schematic diagrams. When describing the embodiments of the present application, for the convenience of explanation, the schematic diagrams representing the device structure of the device are not partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the protection of the present application. scope. In addition, the three-dimensional spatial dimensions of length, width and height should be included in the actual production.
图1为本申请实施例提供的一种量子点显示面板的剖面结构示意图。如图1所示，该显示面板包括：紫外光背光模组10以及位于所述紫外光背光模组10出光面的量子点彩膜叠层结构11，其中，量子点彩膜叠层结构11包括：位于紫外光背光模组10出光面的第一水氧阻隔层12，位于第一水氧阻隔层12上的第一介质基材13，位于第一介质基材13上的多个条状挡墙结构14，多个挡墙结 构14沿第一方向延伸且沿第二方向排列，第二方向垂直于第一方向，相邻挡墙结构14之间的间隙构成透光区Aa，依次层叠于透光区Aa内的第一图案化量子点光固化胶层15上的第一封装胶层16、第二介质基材17、第二图案化量子点光固化胶层18、第二封装胶层19、第三介质基材20、第三图案化量子点光固化胶层21和第三封装胶层22，第一图案化量子点光固化胶层15、第二图案化量子点光固化胶层18和第三图案化量子点光固化胶层21在第一水氧阻隔层12上的垂直投影不交叠，第一图案化量子点光固化胶层15、第二图案化量子点光固化胶层18和第三图案化量子点光固化胶层21分别为红光图案化量子点光固化胶层、绿光图案化量子点光固化胶层和蓝光图案化量子点光固化胶层中的任一种，且不相同，位于第三封装胶层22上的第二水氧阻隔层23。FIG. 1 is a schematic cross-sectional structure diagram of a quantum dot display panel according to an embodiment of the present application. As shown in FIG. 1 , the display panel includes: an ultraviolet light backlight module 10 and a quantum dot color filter laminated structure 11 located on the light-emitting surface of the ultraviolet light backlight module 10 , wherein the quantum dot color filter laminated structure 11 includes : the first water-oxygen barrier layer 12 located on the light-emitting surface of the ultraviolet backlight module 10 , the first medium substrate 13 located on the first water-oxygen barrier layer 12 , the plurality of strip-shaped barriers located on the first medium substrate 13 The wall structure 14, a plurality of retaining wall structures 14 extend along the first direction and are arranged along the second direction, the second direction is perpendicular to the first direction, and the gap between the adjacent retaining wall structures 14 constitutes the light-transmitting area Aa, which is stacked in turn. The first encapsulation adhesive layer 16, the second dielectric substrate 17, the second patterned quantum dots photo-curable adhesive layer 18, the second encapsulation adhesive layer on the first patterned quantum dot photo-curable adhesive layer 15 in the light-transmitting area Aa 19. The third dielectric substrate 20, the third patterned quantum dot photocurable adhesive layer 21 and the third encapsulation adhesive layer 22, the first patterned quantum dot photocurable adhesive layer 15, the second patterned quantum dot photocurable adhesive layer 18 and the vertical projections of the third patterned quantum dot photocurable adhesive layer 21 on the first water and oxygen barrier layer 12 do not overlap, the first patterned quantum dot photocurable adhesive layer 15 and the second patterned quantum dot photocurable adhesive The layer 18 and the third patterned quantum dot photocurable adhesive layer 21 are respectively any of the red light patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer and the blue light patterned quantum dot photocurable adhesive layer. One, and not the same, is the second water and oxygen barrier layer 23 located on the third encapsulation adhesive layer 22 .
图1仅以三个挡墙结构14隔开的两组像素单元进行说明而非限定，在本实施例的其他实施方式中，挡墙结构14的数量可以为三个或多于三个，其像素单元的数目由挡墙结构14的数目决定。参见图1，紫外光背光模组10包括紫外光背光源基板101和多个与第一图案化量子点光固化胶层15中的红光量子点、第二图案化量子点光固化胶层18中的绿光量子点以及第三图案化量子点光固化胶层21中的蓝光量子点分别对应的紫外光激发单元102，并且紫外光激发单元102可以直接形成于紫外光背光源基板101上。FIG. 1 only uses two groups of pixel units separated by three retaining wall structures 14 for illustration but not limitation. In other implementations of this embodiment, the number of retaining wall structures 14 may be three or more than three. The number of pixel units is determined by the number of retaining wall structures 14 . Referring to FIG. 1 , the ultraviolet light backlight module 10 includes an ultraviolet light backlight source substrate 101 and a plurality of red light quantum dots in the first patterned quantum dot photocurable adhesive layer 15 and the second patterned quantum dot photocurable adhesive layer 18 . The green light quantum dots and the blue light quantum dots in the third patterned quantum dot photocurable adhesive layer 21 correspond to the ultraviolet light excitation units 102 respectively, and the ultraviolet light excitation units 102 can be directly formed on the ultraviolet light backlight source substrate 101 .
紫外光背光模组10包括阵列排布的多个紫外光激发单元102，实现像素级背光，紫外光激发单元102例如可以是LED光源、OLED光源、Mini-LED光源、Micro-LED光源、等离子光源或半导体激发器等，紫外光背光模组10中的背光源发射光的峰值波长例如可以为230-395nm的紫外光，可以激发多层量子点(光固化胶层)凝胶层上的量子点，实现全彩显示。另外，在紫外光背光模组10出光面设置第一水氧阻隔层12以及在第三封装胶层22上设置第二水氧阻隔层23，能够阻隔外界水氧对量子点彩膜叠层结构的侵蚀。The ultraviolet light backlight module 10 includes a plurality of ultraviolet light excitation units 102 arranged in an array to realize pixel-level backlight. The ultraviolet light excitation units 102 can be, for example, LED light sources, OLED light sources, Mini-LED light sources, Micro-LED light sources, and plasma light sources. Or a semiconductor exciter, etc., the peak wavelength of the light emitted by the backlight source in the ultraviolet light backlight module 10 can be, for example, ultraviolet light of 230-395 nm, which can excite the quantum dots on the multi-layer quantum dot (light-curing adhesive layer) gel layer. , to achieve full-color display. In addition, the first water and oxygen barrier layer 12 is arranged on the light-emitting surface of the ultraviolet backlight module 10 and the second water and oxygen barrier layer 23 is arranged on the third encapsulation adhesive layer 22, which can block the external water and oxygen from affecting the quantum dot color film laminated structure erosion.
此外，第一图案化量子点光固化胶层15、第二图案化量子点光固化胶层18和第三图案化量子点光固化胶层21在第一水氧阻隔层12上的垂直投影不交叠，三者相互之间不遮挡，当紫外光背光模组10发出紫外光时，紫外光能够直接到达多个图案化量子点光固化胶层，激发量子点发出对应的光。In addition, the vertical projections of the first patterned quantum dot photocurable adhesive layer 15 , the second patterned quantum dot photocurable adhesive layer 18 and the third patterned quantum dot photocurable adhesive layer 21 on the first water-oxygen barrier layer 12 are different. When the ultraviolet light backlight module 10 emits ultraviolet light, the ultraviolet light can directly reach a plurality of patterned quantum dot photocurable adhesive layers to excite the quantum dots to emit corresponding light.
在一个透光区Aa内，一个红色量子点、一个绿量子点及一个蓝色量子点构成一个像素单元结构，相邻的像素单元结构之间设置的条状挡墙结构14，可以将相邻的像素单元结构隔开，以避免产生光串扰现象，提升显示器件的分辨率。In a light-transmitting area Aa, a red quantum dot, a green quantum dot and a blue quantum dot constitute a pixel unit structure, and the strip-shaped retaining wall structure 14 arranged between adjacent pixel unit structures can connect the adjacent pixel unit structures. The pixel unit structure is separated to avoid the phenomenon of optical crosstalk and improve the resolution of the display device.
本实施例提供的技术方案，量子点显示面板包括紫外光背光模组以及位于紫外光背光模组出光面的量子点彩膜叠层结构，量子点彩膜叠层结构包括第一水氧阻隔层、第一介质基材、多个条状挡墙结构、第一图案化量子点光固化胶 层、第一封装胶层、第二介质基材、第二图案化量子点光固化胶层、第二封装胶层、第三介质基材、第三图案化量子点光固化胶层、第三封装胶层以及第二水氧阻隔层，其中，第一图案化量子点光固化胶层、第二图案化量子点光固化胶层和第三图案化量子点光固化胶层在第一水氧阻隔层上的垂直投影不交叠，第一图案化量子点光固化胶层、第二图案化量子点光固化胶层和第三图案化量子点光固化胶层分别为红光图案化量子点光固化胶层、绿光图案化量子点光固化胶层和蓝光图案化量子点光固化胶层中的任一种，且不相同，未使用彩色滤光片，按照量子点波长，从外向内依次为蓝光图案化量子点层、绿光图案化量子点层、红光图案化量子点层，从而减少长波量子点层对短波量子点层发射光的再吸收，与从外到内红-绿-蓝(相反排布)顺序相比，整体发光效率提高了18％以上，且红、绿、蓝量子点异层设置，量子点之间不会相互干扰，提升了显示面板的出光性能，且兼容多种背光源，扩宽了显示面板的应用领域。In the technical solution provided in this embodiment, the quantum dot display panel includes an ultraviolet light backlight module and a quantum dot color film laminated structure located on the light-emitting surface of the ultraviolet light backlight module, and the quantum dot color film laminated structure includes a first water-oxygen barrier layer , the first dielectric substrate, a plurality of strip-shaped retaining wall structures, the first patterned quantum dot photocurable adhesive layer, the first encapsulation adhesive layer, the second dielectric substrate, the second patterned quantum dot photocurable adhesive layer, the first Two encapsulation adhesive layers, a third dielectric substrate, a third patterned quantum dot photocurable adhesive layer, a third encapsulation adhesive layer and a second water and oxygen barrier layer, wherein the first patterned quantum dot photocurable adhesive layer, the second The vertical projections of the patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer on the first water and oxygen barrier layer do not overlap, and the first patterned quantum dot photocurable adhesive layer and the second patterned quantum dot photocurable adhesive layer do not overlap. The dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are respectively the red light patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer and the blue light patterned quantum dot photocurable adhesive layer. Any one, and not the same, without using color filters, according to the wavelength of the quantum dots, from the outside to the inside, the blue light patterned quantum dot layer, the green light patterned quantum dot layer, the red light patterned quantum dot layer, thus Compared with the red-green-blue (reverse arrangement) sequence from the outside to the inside, the overall luminous efficiency is increased by more than 18%, and the red, green, blue Quantum dots are arranged in different layers, so that quantum dots will not interfere with each other, which improves the light output performance of the display panel, and is compatible with a variety of backlight sources, which expands the application field of the display panel.
可选的，参照图1，第一图案化量子点光固化胶层15为红光图案化量子点光固化胶层，第二图案化量子点光固化胶层18为绿光图案化量子点光固化胶层，第三图案化量子点光固化胶层21为蓝光图案化量子点光固化胶层。Optionally, referring to FIG. 1 , the first patterned quantum dot photocurable adhesive layer 15 is a red light patterned quantum dot photocurable adhesive layer, and the second patterned quantum dot photocurable adhesive layer 18 is a green light patterned quantum dot photocurable adhesive layer. Curing adhesive layer, the third patterned quantum dot photocurable adhesive layer 21 is a blue light patterned quantum dot photocurable adhesive layer.
三层量子点凝胶层按照量子点波长排布，其中，红光量子点凝胶层的发射波长为一般为620nm-660nm，绿光量子点凝胶层的发射波长为520nm-540nm，蓝光量子点凝胶层的发射波长为440nm-470nm，紫外光背光模组10出射的紫外光先经过波长较长的红光量子点凝胶层，最后经过波长较短的蓝光量子点凝胶层，以此减少长波长量子点凝胶层对短波长量子点凝胶层的再吸收。The three-layer quantum dot gel layer is arranged according to the wavelength of quantum dots, wherein the emission wavelength of the red quantum dot gel layer is generally 620nm-660nm, the emission wavelength of the green quantum dot gel layer is 520nm-540nm, and the emission wavelength of the blue quantum dot gel layer is 520nm-540nm. The emission wavelength of the adhesive layer is 440nm-470nm. The ultraviolet light emitted from the ultraviolet backlight module 10 first passes through the red quantum dot gel layer with a longer wavelength, and finally passes through the blue quantum dot gel layer with a shorter wavelength, so as to reduce the long wavelength. Reabsorption of short-wavelength quantum dot gel layers by wavelength quantum dot gel layers.
如此，量子点凝胶层的排布设置可以提高紫外光作为背光源激发的发光效率，从而减少长波长图案化量子点光固化胶层对短波长图案化量子点光固化胶层发射光的再吸收，提升整体发光效率。In this way, the arrangement of the quantum dot gel layer can improve the luminous efficiency excited by ultraviolet light as a backlight source, thereby reducing the re-emission of the long-wavelength patterned quantum dot photo-curable adhesive layer to the short-wavelength patterned quantum dot photo-curable adhesive layer. Absorption, improve the overall luminous efficiency.
可选的，参照图1，该量子点显示面板还包括紫外光反射层24，紫外光反射层24位于透光区Aa内的第三封装胶层22和第二水氧阻隔层23之间。Optionally, referring to FIG. 1 , the quantum dot display panel further includes an ultraviolet light reflection layer 24 , and the ultraviolet light reflection layer 24 is located between the third encapsulation adhesive layer 22 and the second water and oxygen barrier layer 23 in the light transmission area Aa.
本实施例中的紫外光反射层24可以选择性的透过红色光和绿色光，同时反射发射光峰值波长为230-395nm的紫外光，参照图1，当紫外光背光模组10发出紫外光，激发红光图案化量子点光固化胶层、绿光图案化量子点光固化胶层和蓝光图案化量子点光固化胶层上的红色量子点、绿色量子点和蓝色量子点，在激发不同的量子点凝胶层时，经过红光图案化量子点光固化胶层、绿光图案化量子点光固化胶层和蓝光图案化量子点光固化胶层的过量紫外光会被紫外光反射层24反射，从而使多余的紫外光经反射来继续激发红、绿、蓝量子点，避免紫外光浪费。The ultraviolet light reflecting layer 24 in this embodiment can selectively transmit red light and green light, and at the same time reflect ultraviolet light with a peak wavelength of 230-395 nm. Referring to FIG. 1 , when the ultraviolet light backlight module 10 emits ultraviolet light , Excite the red quantum dots, green quantum dots and blue quantum dots on the red light patterned quantum dot photocurable adhesive layer, green light patterned quantum dot photocurable adhesive layer and blue light patterned quantum dot photocurable adhesive layer. When different quantum dot gel layers are used, the excess UV light passing through the red light patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer and the blue light patterned quantum dot photocurable adhesive layer will be reflected by the UV light The layer 24 reflects, so that the excess ultraviolet light is reflected to continue to excite the red, green, and blue quantum dots, and the waste of ultraviolet light is avoided.
图2为本申请实施例提供的一种量子点彩膜叠层结构的俯视结构示意图。 如图2所示，第一图案化量子点光固化胶层15包括多个沿第一方向y延伸且沿第二方向x排列的条状第一量子点凝胶层41，第二图案化量子点光固化胶层18包括多个沿第一方向y延伸且沿第二方向x排列的条状第二量子点凝胶层42，第三图案化量子点光固化胶层21包括多个沿第一方向y延伸且沿第二方向x排列的条状第三量子点凝胶层43，任意相邻所述挡墙结构14之间的透光区Aa内设置一个第一量子点凝胶层41、一个第二量子点凝胶层42和一个第三量子点凝胶层43，利用挡墙结构14将多个像素单元隔开，可以避免光串扰现象，提升显示器件的分辨率。FIG. 2 is a schematic top-view structural diagram of a quantum dot color filter stack structure provided by an embodiment of the present application. As shown in FIG. 2 , the first patterned quantum dot photocurable adhesive layer 15 includes a plurality of strip-shaped first quantum dot gel layers 41 extending along the first direction y and arranged along the second direction x. The dot photo-curable adhesive layer 18 includes a plurality of strip-shaped second quantum dot gel layers 42 extending along the first direction y and arranged along the second direction x, and the third patterned quantum dot photo-curable adhesive layer 21 includes a plurality of strip-shaped quantum dot photo-curable adhesive layers 42 along the first direction y. A strip-shaped third quantum dot gel layer 43 extending in one direction y and arranged along the second direction x, a first quantum dot gel layer 41 is provided in the light-transmitting area Aa between any adjacent retaining wall structures 14 , a second quantum dot gel layer 42 and a third quantum dot gel layer 43, using the retaining wall structure 14 to separate a plurality of pixel units, which can avoid the phenomenon of optical crosstalk and improve the resolution of the display device.
第一图案化量子点光固化胶层15、第二图案化量子点光固化胶层18以及第三图案化量子点光固化胶层21上的量子点材料可以是条状分布的，此时每层量子点凝胶层上的量子点材料的线宽相当于红色子像素点或绿色子像素点或蓝色子像素点的宽度。The quantum dot materials on the first patterned quantum dot photocurable adhesive layer 15 , the second patterned quantum dot photocurable adhesive layer 18 and the third patterned quantum dot photocurable adhesive layer 21 may be distributed in stripes, and each The line width of the quantum dot material on the quantum dot gel layer is equivalent to the width of the red sub-pixel point or the green sub-pixel point or the blue sub-pixel point.
可选的，图3为本申请实施例提供的又一种量子点彩膜叠层结构的俯视结构示意图。如图3所示，第一图案化量子点光固化胶层15包括多个沿第一方向y延伸且沿第二方向x排列的第一量子点凝胶列31，第一量子点凝胶列31可以包括多个沿第一方向y排列的第一量子点凝胶块311，第二图案化量子点光固化胶层18包括多个沿第一方向y延伸且沿第二方向x排列的第二量子点凝胶列32，第二量子点凝胶列32可以包括多个沿第一方向y排列的第二量子点凝胶块321，第三图案化量子点光固化胶层21包括多个沿第一方向y延伸且沿第二方向x排列的第三量子点凝胶列33，第三量子点凝胶列33可以包括多个沿第一方向y排列的第三量子点凝胶块331，任意相邻挡墙结构14之间的透光区Aa内设置一个第一量子点凝胶列31、一个第二量子点凝胶列32和一个第三量子点凝胶列33。Optionally, FIG. 3 is a schematic top-view structural diagram of yet another quantum dot color filter stack structure provided by an embodiment of the present application. As shown in FIG. 3 , the first patterned quantum dot photocurable adhesive layer 15 includes a plurality of first quantum dot gel arrays 31 extending along the first direction y and arranged along the second direction x. The first quantum dot gel arrays 31 31 may include a plurality of first quantum dot gel blocks 311 arranged along the first direction y, and the second patterned quantum dot photocurable adhesive layer 18 includes a plurality of first quantum dot gel blocks 311 extending along the first direction y and arranged along the second direction x. Two quantum dot gel arrays 32, the second quantum dot gel array 32 may include a plurality of second quantum dot gel blocks 321 arranged along the first direction y, and the third patterned quantum dot photocurable adhesive layer 21 includes a plurality of The third quantum dot gel column 33 extending along the first direction y and arranged along the second direction x, the third quantum dot gel column 33 may include a plurality of third quantum dot gel blocks 331 arranged along the first direction y , a first quantum dot gel column 31 , a second quantum dot gel column 32 and a third quantum dot gel column 33 are arranged in the light-transmitting area Aa between any adjacent retaining wall structures 14 .
当不同图案化量子点光固化胶层包括多个沿第一方向延伸且沿第二方向排列的量子点凝胶列，且量子点凝胶列包括多个沿第一方向排列的每个量子点材料呈块状分布时，每个块的尺寸相当于红色子像素点或绿色子像素点或蓝色子像素点的尺寸，当每个量子点材料呈块状分布时，紫外光激发单元102发射出紫外光时投射到量子点凝胶层上的发射光完美的落到每个量子点上，更好提升显示面板的出光性能。When the different patterned quantum dot photocurable adhesive layers include a plurality of quantum dot gel columns extending along the first direction and arranged along the second direction, and the quantum dot gel column includes a plurality of quantum dots each arranged along the first direction When the material is distributed in blocks, the size of each block is equivalent to the size of the red sub-pixel point or the green sub-pixel point or the blue sub-pixel point. When the material of each quantum dot is distributed in a block shape, the ultraviolet light excitation unit 102 emits When the ultraviolet light is emitted, the emitted light projected on the quantum dot gel layer perfectly falls on each quantum dot, which better improves the light output performance of the display panel.
图4为本申请实施例提供的一种量子点显示面板的制备方法的流程示意图。该方法适用于上述任意实施例中的量子点显示面板的制备，如图4所示，该方法包括如下：FIG. 4 is a schematic flowchart of a method for manufacturing a quantum dot display panel according to an embodiment of the present application. This method is applicable to the preparation of the quantum dot display panel in any of the above embodiments. As shown in FIG. 4 , the method includes the following:
S410、提供紫外光背光模组和第一介质基材。S410 , providing an ultraviolet light backlight module and a first medium substrate.
S420、在第一介质基材上形成第一水氧阻隔层。S420 , forming a first water and oxygen barrier layer on the first dielectric substrate.
S430、将第一水氧阻隔层安装于紫外光背光模组的出光面。S430 , installing the first water-oxygen barrier layer on the light-emitting surface of the ultraviolet backlight module.
S440、在第一介质基材远离紫外光背光模组的一侧形成多个条状挡墙结构，多个挡墙结构沿第一方向延伸且沿第二方向排列，第二方向垂直于第一方向，相邻挡墙结构之间的间隙构成透光区。S440 , forming a plurality of strip-shaped retaining wall structures on the side of the first dielectric substrate away from the ultraviolet backlight module, the plurality of retaining wall structures extending along a first direction and arranged in a second direction, and the second direction is perpendicular to the first direction direction, the gap between adjacent retaining wall structures constitutes a light-transmitting area.
S450、在透光区内的第一介质基材上依次形成层叠的第一图案化量子点光固化胶层、第一封装胶层、第二介质基材、第二图案化量子点光固化胶层、第二封装胶层、第三介质基材、第三图案化量子点光固化胶层和第三封装胶层，第一图案化量子点光固化胶层、第二图案化量子点光固化胶层和第三图案化量子点光固化胶层在第一水氧阻隔层上的垂直投影不交叠，第一图案化量子点光固化胶层、第二图案化量子点光固化胶层和第三图案化量子点光固化胶层分别为红光图案化量子点光固化胶层、绿光图案化量子点光固化胶层和蓝光图案化量子点光固化胶层中的任一种，且不相同。S450 , forming a stacked first patterned quantum dot photocurable adhesive layer, a first encapsulation adhesive layer, a second dielectric substrate, and a second patterned quantum dot photocurable adhesive in sequence on the first dielectric substrate in the light-transmitting area layer, the second encapsulation adhesive layer, the third dielectric substrate, the third patterned quantum dot photocurable adhesive layer and the third encapsulation adhesive layer, the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable The vertical projections of the adhesive layer and the third patterned quantum dot photocurable adhesive layer on the first water and oxygen barrier layer do not overlap, and the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and The third patterned quantum dot photocurable adhesive layer is any one of the red light patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer, and the blue light patterned quantum dot photocurable adhesive layer, and Are not the same.
S460、在第三封装胶层上形成第二水氧阻隔层。S460 , forming a second water-oxygen barrier layer on the third encapsulation adhesive layer.
本实施例提供的技术方案，通过设置紫外光背光模组和第一介质基材，在第一介质基材上形成第一水氧阻隔层，将第一水氧阻隔层安装于紫外光背光模组的出光面，在第一介质基材远离所述紫外光背光模组的一侧形成多个条状挡墙结构，多个挡墙结构沿第一方向延伸且沿第二方向排列，第二方向垂直于第一方向，相邻挡墙结构之间的间隙构成透光区，在透光区内的第一介质基材上依次形成层叠的第一图案化量子点光固化胶层、第一封装胶层、第二介质基材、第二图案化量子点光固化胶层、第二封装胶层、第三介质基材、第三图案化量子点光固化胶层和第三封装胶层，第一图案化量子点光固化胶层、第二图案化量子点光固化胶层和第三图案化量子点光固化胶层在第一水氧阻隔层上的垂直投影不交叠，第一图案化量子点光固化胶层、第二图案化量子点光固化胶层和第三图案化量子点光固化胶层分别为红光图案化量子点光固化胶层、绿光图案化量子点光固化胶层和蓝光图案化量子点光固化胶层中的任一种，且不相同，未使用彩色滤光片，提高了发光效率，且红、绿、蓝量子点异层设置，量子点之间不会相互干扰，提升了显示面板的出光性能，且兼容多种背光源，扩宽了显示面板的应用领域。In the technical solution provided by this embodiment, a first water and oxygen barrier layer is formed on the first medium substrate by arranging a UV backlight module and a first medium substrate, and the first water and oxygen barrier layer is installed on the UV backlight module. On the light emitting surface of the group, a plurality of strip-shaped blocking wall structures are formed on the side of the first medium substrate away from the ultraviolet light backlight module, and the plurality of blocking wall structures extend along the first direction and are arranged along the second direction, and the second The direction is perpendicular to the first direction, the gaps between the adjacent retaining wall structures constitute a light-transmitting area, and in the light-transmitting area, the first patterned quantum dot photocurable adhesive layer, the first an encapsulation adhesive layer, a second dielectric substrate, a second patterned quantum dot photocurable adhesive layer, a second encapsulation adhesive layer, a third dielectric substrate, a third patterned quantum dot photocurable adhesive layer, and a third encapsulation adhesive layer, The vertical projections of the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer on the first water and oxygen barrier layer do not overlap, and the first pattern The quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are respectively the red light patterned quantum dot photocurable adhesive layer and the green light patterned quantum dot photocurable adhesive layer. Either the adhesive layer or the blue-light patterned quantum dot photocurable adhesive layer is different, no color filter is used, and the luminous efficiency is improved, and the red, green, and blue quantum dots are arranged in different layers, and the quantum dots are arranged in different layers. They will not interfere with each other, improve the light output performance of the display panel, and are compatible with a variety of backlight sources, thus expanding the application field of the display panel.
图5为本申请实施例提供的一种形成挡墙结构的过程示意图。如图5所示，首先提供一紫外光背光模组10和第一介质基材13。FIG. 5 is a schematic diagram of a process of forming a retaining wall structure according to an embodiment of the present application. As shown in FIG. 5 , an ultraviolet backlight module 10 and a first medium substrate 13 are provided first.
参照图5，利用沉积法在第一介质基材13下表面沉积一层水氧阻隔物质，形成第一水氧阻隔层12，可以有效避免出光时水份和氧气进入量子点彩膜叠层结构进而劣化器件。Referring to FIG. 5 , a layer of water and oxygen barrier material is deposited on the lower surface of the first dielectric substrate 13 by a deposition method to form the first water and oxygen barrier layer 12, which can effectively prevent moisture and oxygen from entering the quantum dot color filter stack structure during light emission. This in turn degrades the device.
可选的，参见图5，在第一介质基材13上涂覆挡墙材料胶膜141，控制紫外光背光模组10中位于透光区Aa内的光源出射紫外光，以溶解对应区域内的挡墙材料胶膜141，去除溶解后的挡墙材料胶膜141，以形成多个条状挡墙结构14。Optionally, referring to FIG. 5 , a barrier material adhesive film 141 is coated on the first medium substrate 13 to control the light source located in the light-transmitting area Aa in the ultraviolet backlight module 10 to emit ultraviolet light, so as to dissolve the corresponding area. The retaining wall material adhesive film 141 is removed, and the dissolved retaining wall material adhesive film 141 is removed to form a plurality of strip-shaped retaining wall structures 14 .
挡墙结构14为不透光的材料，目的是将相邻的像素结构单元隔开，以避免产生光串扰现象，此处，对挡墙结构14的材料不做限定，只要起到遮挡光的作用即可。The blocking wall structure 14 is made of an opaque material, and the purpose is to separate adjacent pixel structure units to avoid the phenomenon of light crosstalk. Here, the material of the blocking wall structure 14 is not limited, as long as it can block light. can work.
图6为本申请实施例提供的一种图案化量子点光固化胶层制备过程示意图。如图6所示，在形成挡墙结构14后，即在图5的基础上，继续利用喷涂法，在第一介质基材13上喷涂红光量子点光固化胶水151，打开第一图案化量子点光固化胶层15中红色量子点对应的紫外光激发单元102，使其正上方的红光量子点胶151固化，并且清洗未打开紫外光激发单元102照射的红光量子点光固化胶，以此得到第一图案化量子点光固化胶层15，即红光图案化量子点光固化胶层，紧接着在第一图案化量子点光固化胶层15上涂覆封装胶水，加热固化后得到第一封装胶层16，继续在第一封装胶层上16加热固化，得到第二介质基材17，利用相同的制备方法，层叠制备可得到第二图案化量子点光固化胶层18、第二封装胶层19、第三介质基材20、第三图案化量子点光固化胶层21、第三封装胶层22，每层图案化量子点光固化胶层制备方法相同，此处不做赘述。FIG. 6 is a schematic diagram of a preparation process of a patterned quantum dot photocurable adhesive layer according to an embodiment of the present application. As shown in FIG. 6 , after the retaining wall structure 14 is formed, that is, on the basis of FIG. 5 , continue to use the spraying method to spray the red light quantum dot photocurable glue 151 on the first dielectric substrate 13 to open the first patterned quantum dots. The ultraviolet light excitation unit 102 corresponding to the red quantum dots in the spot light curing adhesive layer 15 is cured, and the red light quantum dot glue 151 directly above it is cured, and the red light quantum dot light curing adhesive that is not irradiated by the ultraviolet light excitation unit 102 is cleaned. The first patterned quantum dot photocurable adhesive layer 15 is obtained, that is, the red light patterned quantum dot photocurable adhesive layer, followed by coating encapsulation glue on the first patterned quantum dot photocurable adhesive layer 15, and heating and curing to obtain the first An encapsulating adhesive layer 16 is continuously heated and cured on the first encapsulating adhesive layer 16 to obtain a second dielectric substrate 17. Using the same preparation method, the second patterned quantum dot photocurable adhesive layer 18, the second The encapsulation adhesive layer 19 , the third dielectric substrate 20 , the third patterned quantum dot photocurable adhesive layer 21 , and the third encapsulation adhesive layer 22 , the preparation method of each patterned quantum dot photocurable adhesive layer is the same, and will not be repeated here. .
封装胶层可以由整层封装胶灌充，可以起到防尘、防水、散热等作用，常见的封装胶主要包括环氧类封装胶、有机硅类封装胶、聚氨酯封装胶以及紫外线光固化封装胶，在本实施例中，为了配合紫外光背光模组10激发紫外光，封装胶层中的封装胶可以使用紫外线光固化封装胶。The encapsulant layer can be filled with the whole layer of encapsulant, which can play the role of dustproof, waterproof and heat dissipation. Common encapsulant mainly include epoxy encapsulant, silicone encapsulant, polyurethane encapsulant and ultraviolet light curing encapsulation. In this embodiment, in order to cooperate with the ultraviolet backlight module 10 to excite ultraviolet light, the encapsulation adhesive in the encapsulation adhesive layer can be cured by ultraviolet light.
图7为本申请实施例提供的一种形成水氧阻隔层的过程示意图。如图7所示，在第三封装胶层22上表面沉积一层水氧阻隔物质，形成第二水氧阻隔层23，使第二水氧阻隔层23和第一水氧阻隔层12分别位于量子点彩膜叠层的上下方对应设置。FIG. 7 is a schematic diagram of a process for forming a water-oxygen barrier layer according to an embodiment of the present application. As shown in FIG. 7 , a layer of water and oxygen barrier material is deposited on the upper surface of the third encapsulation adhesive layer 22 to form the second water and oxygen barrier layer 23 , so that the second water and oxygen barrier layer 23 and the first water and oxygen barrier layer 12 are respectively located at The upper and lower sides of the quantum dot color filter stack are correspondingly set.
可选的，图8为本申请实施例提供的一种形成紫外光反射层的过程示意图。如图8所示，在第三封装胶层22上形成第二水氧阻隔层23之前，还包括：在所述第三封装层22上形成紫外光反射层24。Optionally, FIG. 8 is a schematic diagram of a process of forming an ultraviolet light reflection layer provided by an embodiment of the present application. As shown in FIG. 8 , before forming the second water-oxygen barrier layer 23 on the third encapsulation adhesive layer 22 , the method further includes: forming an ultraviolet light reflection layer 24 on the third encapsulation layer 22 .
据此，在第三封装胶层22上形成紫外光反射层24，再在紫外光反射层上形成第二水氧阻隔层23，得到如图1所示结构。Accordingly, an ultraviolet light reflecting layer 24 is formed on the third encapsulation adhesive layer 22 , and a second water and oxygen barrier layer 23 is formed on the ultraviolet light reflecting layer to obtain the structure shown in FIG. 1 .
图9为本申请实施例提供的一种形成量子点彩膜叠层的流程示意图。在上述实施例的基础上，在透光区内的第一介质基材上依次形成层叠的第一图案化 量子点光固化胶层、第一封装胶层、第二介质基材、第二图案化量子点光固化胶层、第二封装胶层、第三介质基材、第三图案化量子点光固化胶层和第三封装胶层的方法包括如下：FIG. 9 is a schematic flowchart of forming a quantum dot color filter stack provided by an embodiment of the present application. On the basis of the above embodiment, a first patterned quantum dot photocurable adhesive layer, a first encapsulation adhesive layer, a second dielectric substrate, and a second pattern are sequentially formed on the first dielectric substrate in the light-transmitting area. The method of chemically synthesizing the quantum dot photocurable adhesive layer, the second encapsulation adhesive layer, the third dielectric substrate, the third patterned quantum dot photocurable adhesive layer and the third encapsulation adhesive layer includes the following steps:
S910、制备量子点凝胶，在透光区内的第一介质基材上涂覆量子点凝胶，控制紫外光背光模组出射图案化的紫外光，以固化对应区域内的所述量子点凝胶，去除未被固化的量子点凝胶，以形成第一图案化量子点光固化胶层。S910, preparing quantum dot gel, coating quantum dot gel on the first medium substrate in the light-transmitting area, and controlling the ultraviolet backlight module to emit patterned ultraviolet light, so as to cure the quantum dots in the corresponding area gel, removing the uncured quantum dot gel to form a first patterned quantum dot photocurable adhesive layer.
可选的，制备量子点凝胶包括：通过溶液法制备量子点溶液，在量子点溶液中添加胶水单体，形成胶水混合液，在胶水混合液中添加紫外光引发剂，进行搅拌，形成量子点凝胶。Optionally, preparing the quantum dot gel includes: preparing a quantum dot solution by a solution method, adding a glue monomer to the quantum dot solution to form a glue mixture, adding an ultraviolet photoinitiator to the glue mixture, and stirring to form a quantum dot solution. Dot gel.
可选的，通过溶液法制备量子点溶液方法包括：通过溶液法制备量子点核心材料溶液，在量子点核心材料中添加包覆层材料形成核壳结构量子点材料溶液，在核壳结构量子点材料溶液中添加表面配体材料溶液，通过离心以及提纯处理获得量子点溶液。Optionally, the method for preparing a quantum dot solution by a solution method includes: preparing a quantum dot core material solution by a solution method, adding a coating layer material to the quantum dot core material to form a core-shell structure quantum dot material solution, and adding a core-shell structure quantum dot material solution. The surface ligand material solution is added to the material solution, and the quantum dot solution is obtained by centrifugation and purification.
通过溶液法制备量子点溶液，可以包括金属有机合成法、水相直接合成法、热注入合成法和反溶剂合成法等。其中，溶液法是把沉淀物从它的溶液里分离出来形成晶体的生长方法。The quantum dot solution is prepared by solution method, which can include metal organic synthesis method, direct aqueous phase synthesis method, hot injection synthesis method and anti-solvent synthesis method. Among them, the solution method is a growth method in which the precipitate is separated from its solution to form a crystal.
可选的，量子点核心材料溶液包括A xM yE z体系，其中，A元素为钡(Barium，Ba)、银(Argentum，Ag)、钠(Natrium，Na)、铁(Ferrum，Fe)、铟(Indium，In)、镉(Cadmium，Cd)、锌(Zinc，Zn)、镓(Gallium，Ga)、镁(Magnesium，Mg)、铅(Plumbum，Pb)、铯(Caesium，Cs)中的一种，M元素为硫(Sulfur，S)、氯(Chlorine，Cl)、氧(Oxygen，O)、砷(Arsenic，As)、氮(Nitrogen，N)、磷(Phosphorus，P)、硒(Selenium，Se)、碲(Tellurium，Te)、钛(Titanium，Ti)、锆(Zirconium，Zr)、Pb中的一种，E元素为S、As、Se、O、Cl、溴(Bromine，Br)、碘(Iodine，I)中的一种。 Optionally, the quantum dot core material solution includes an A x My E z system, wherein the A element is barium (Barium, Ba), silver (Argentum, Ag), sodium (Natrium, Na), iron (Ferrum, Fe) , Indium (Indium, In), Cadmium (Cadmium, Cd), Zinc (Zinc, Zn), Gallium (Gallium, Ga), Magnesium (Magnesium, Mg), Lead (Plumbum, Pb), Cesium (Caesium, Cs) A kind of M element is sulfur (Sulfur, S), chlorine (Chlorine, Cl), oxygen (Oxygen, O), arsenic (Arsenic, As), nitrogen (Nitrogen, N), phosphorus (Phosphorus, P), selenium One of (Selenium, Se), tellurium (Tellurium, Te), titanium (Titanium, Ti), zirconium (Zirconium, Zr), Pb, E element is S, As, Se, O, Cl, bromine (Bromine, Br), one of iodine (Iodine, I).
可选的，x的取值范围为0.3～2，y的取值范围为0.5～3，z的取值范围为0～4。Optionally, the value range of x is 0.3-2, the value range of y is 0.5-3, and the value range of z is 0-4.
量子点核心材料受到紫外光光源的激发时，便会发出特有波长的激发荧光，其发射的荧光光谱由量子点核心材料的化学组成、粒径决定。由于量子尺寸效应，量子点核心材料随着粒径的增大，同一化学组成的材料发出的荧光光谱是由蓝光向绿光再向红光方向红移的。所采用的发射红光的量子点核心材料、发射绿光的量子点核心材料及发射蓝光的量子点核心材料可以是同一化学组成但调整x、y、z的取值范围，合成粒径不同的量子点核心材料，也可以为不同化学组成的量子点核心材料。When the quantum dot core material is excited by an ultraviolet light source, it will emit excitation fluorescence with a unique wavelength, and the emitted fluorescence spectrum is determined by the chemical composition and particle size of the quantum dot core material. Due to the quantum size effect, as the particle size of the core material of quantum dots increases, the fluorescence spectrum emitted by the material with the same chemical composition is red-shifted from blue light to green light and then to red light. The core material of quantum dots emitting red light, the core material of quantum dots emitting green light and the core material of quantum dots emitting blue light can be of the same chemical composition but the value ranges of x, y and z are adjusted to synthesize different particle sizes. The core material of quantum dots can also be core materials of quantum dots with different chemical compositions.
可选的，量子点核心材料溶液包括硒化镉CdSe、磷化铟InP和溴铅铯CsPbBr3中的一种或至少两种的复合材料。Optionally, the quantum dot core material solution includes one or a composite material of at least two of cadmium selenide CdSe, indium phosphide InP and bromine lead cesium CsPbBr3.
示例性的，对于硒化镉(CdSe)量子点，由l0nm减小至2nm时，硒化镉量子点发射光的颜色由红色变化到蓝色，当硒化镉量子点的尺寸大于或者等于2nm且小于5nm时发射蓝色的光；当硒化镉量子点的尺寸大于或者等于5nm且小于8nm时发射绿色的光；当硒化镉量子点的尺寸大于或者等于8nm且小于l0nm时发射红色的光。对于钙钛矿量子点(CsPbX3(X＝Cl、Br、I))，通过调整卤族元素的不同，形成不同化学组形成的量子点核心材料，产生不同颜色的发光。Exemplarily, for cadmium selenide (CdSe) quantum dots, when reducing from 10 nm to 2 nm, the color of light emitted by the cadmium selenide quantum dots changes from red to blue, and when the size of the cadmium selenide quantum dots is greater than or equal to 2 nm When the size of the cadmium selenide quantum dot is greater than or equal to 5nm and less than 8nm, it emits green light; when the size of the cadmium selenide quantum dot is greater than or equal to 8nm and less than 10nm, it emits red light. Light. For perovskite quantum dots (CsPbX3 (X=Cl, Br, I)), by adjusting the difference of halogen elements, the core materials of quantum dots formed by different chemical groups are formed, and the luminescence of different colors is produced.
可选的，包覆层材料包括以下一种材料或多种材料的复合：有机高分子溶液、无机氧化物、金属氧化物、金属单质、合金材料。Optionally, the coating material includes one or a combination of the following materials: organic polymer solution, inorganic oxide, metal oxide, simple metal, and alloy material.
包覆层材料可以是硫化镉CdS、硒化锌ZnSe、硫镉锌ZnCdS2、硫化锌ZnS、硫化铅PbS、氧化锌ZnO、氧化铝Al2O3、二氧化硅SiO2、金(Aurum，Au)单质、Ag单质、铜(Cuprum，Cu)单质等。The coating material can be cadmium sulfide CdS, zinc selenide ZnSe, sulfur cadmium zinc ZnCdS2, zinc sulfide ZnS, lead sulfide PbS, zinc oxide ZnO, aluminum oxide Al2O3, silicon dioxide SiO2, gold (Aurum, Au) element, Ag Element, copper (Cuprum, Cu) element, etc.
在调节氢离子浓度指数(Potenz Hydrogenion，PH)、反应温度、反应时间等条件下，将包覆层材料包覆在量子点材料上，形成核壳结构量子点材料。Under the conditions of adjusting the hydrogen ion concentration index (Potenz Hydrogenion, PH), reaction temperature, reaction time, etc., the coating material is coated on the quantum dot material to form a core-shell structure quantum dot material.
表面配体材料可以为高分子聚合物，与胶水单体具有较好的相容性。表面配体材料与量子点外壳材料反应并键合在一起。The surface ligand material can be a high molecular polymer, which has good compatibility with the glue monomer. The surface ligand material reacts and bonds with the quantum dot shell material.
紫外光引发剂是一类在紫外光区吸收一定波长的能量，产生自由基、阳离子等，从而引发单体聚合交联固化的化合物，示例性的，紫外光引发剂可以是紫外线(Ultra-Violet Ray，UV)涂料、UV油墨等。在所得的胶水混合液中加入紫外光引发剂并对其进行搅拌，即可得到量子点光固化胶水。Ultraviolet photoinitiators are compounds that absorb a certain wavelength of energy in the ultraviolet region to generate free radicals, cations, etc., thereby initiating polymerization and crosslinking of monomers. Ray, UV) coatings, UV inks, etc. Adding an ultraviolet photoinitiator to the obtained glue mixture and stirring it, the quantum dot photocurable glue can be obtained.
S920、在第一图案化量子点光固化胶层上形成第一封装胶层。S920 , forming a first encapsulation adhesive layer on the first patterned quantum dot photocurable adhesive layer.
S930、采用S910中形成第一图案化量子点光固化胶层的方法，在第一封装胶层上形成第二图案化量子点光固化胶层。S930 , using the method of forming the first patterned quantum dot photocurable adhesive layer in S910 to form a second patterned quantum dot photocurable adhesive layer on the first encapsulation adhesive layer.
S940、在第二图案化量子点光固化胶层上形成第二封装胶层。S940, forming a second encapsulation adhesive layer on the second patterned quantum dot photocurable adhesive layer.
S950、采用S910中形成第一图案化量子点光固化胶层的方法，在第二封装胶层上形成第三图案化量子点光固化胶层。S950 , using the method of forming the first patterned quantum dot photocurable adhesive layer in S910 to form a third patterned quantum dot photocurable adhesive layer on the second encapsulation adhesive layer.
S960、在第三图案化量子点光固化胶层上形成第三封装胶层。S960 , forming a third encapsulation adhesive layer on the third patterned quantum dot photocurable adhesive layer.

Claims (15)

  1. 一种量子点显示面板，包括：A quantum dot display panel, comprising:
    紫外光背光模组以及位于所述紫外光背光模组出光面的量子点彩膜叠层结构；an ultraviolet light backlight module and a quantum dot color film laminated structure on the light-emitting surface of the ultraviolet light backlight module;
    其中，所述量子点彩膜叠层结构包括：Wherein, the quantum dot color filter laminated structure includes:
    位于所述紫外光背光模组出光面的第一水氧阻隔层；a first water-oxygen barrier layer on the light-emitting surface of the ultraviolet backlight module;
    位于所述第一水氧阻隔层远离所述紫外光背光模组一侧的第一介质基材；a first medium substrate located on the side of the first water and oxygen barrier layer away from the ultraviolet backlight module;
    位于所述第一介质基材远离所述紫外光背光模组一侧的多个条状挡墙结构，所述多个挡墙结构沿第一方向延伸且沿第二方向排列，所述第二方向垂直于所述第一方向，相邻挡墙结构之间的间隙构成透光区；A plurality of strip-shaped retaining wall structures located on the side of the first medium substrate away from the ultraviolet backlight module, the plurality of retaining wall structures extend along a first direction and are arranged in a second direction, and the second The direction is perpendicular to the first direction, and the gap between adjacent retaining wall structures constitutes a light-transmitting area;
    从所述第一介质基材远离所述紫外光背光模组一侧依次层叠于所述多个条状挡墙结构之间的多个透光区内的第一图案化量子点光固化胶层、第一封装胶层、第二介质基材、第二图案化量子点光固化胶层、第二封装胶层、第三介质基材、第三图案化量子点光固化胶层和第三封装胶层；所述第一图案化量子点光固化胶层、所述第二图案化量子点光固化胶层和所述第三图案化量子点光固化胶层在所述第一水氧阻隔层上的垂直投影不交叠；所述第一图案化量子点光固化胶层、所述第二图案化量子点光固化胶层和所述第三图案化量子点光固化胶层分别为红光图案化量子点光固化胶层、绿光图案化量子点光固化胶层和蓝光图案化量子点光固化胶层中的一种，且不相同；The first patterned quantum dot photocurable adhesive layer is sequentially laminated in the plurality of light-transmitting regions between the plurality of strip-shaped retaining wall structures from the side of the first medium substrate away from the ultraviolet light backlight module. , the first encapsulation adhesive layer, the second dielectric substrate, the second patterned quantum dot photocurable adhesive layer, the second encapsulation adhesive layer, the third dielectric substrate, the third patterned quantum dot photocurable adhesive layer and the third package adhesive layer; the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are in the first water and oxygen barrier layer The vertical projections on it do not overlap; the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are respectively red light One of the patterned quantum dot photocurable adhesive layer, the green light patterned quantum dot photocurable adhesive layer and the blue light patterned quantum dot photocurable adhesive layer, and they are different;
    位于所述第三封装胶层远离所述紫外光背光模组一侧的第二水氧阻隔层。A second water and oxygen barrier layer located on the side of the third encapsulation adhesive layer away from the ultraviolet backlight module.
  2. 根据权利要求1所述的量子点显示面板，其中，所述第一图案化量子点光固化胶层为红光图案化量子点光固化胶层，所述第二图案化量子点光固化胶层为绿光图案化量子点光固化胶层，所述第三图案化量子点光固化胶层为蓝光图案化量子点光固化胶层。The quantum dot display panel according to claim 1, wherein the first patterned quantum dot photocurable adhesive layer is a red light patterned quantum dot photocurable adhesive layer, and the second patterned quantum dot photocurable adhesive layer is It is a green light patterned quantum dot photocurable adhesive layer, and the third patterned quantum dot photocurable adhesive layer is a blue light patterned quantum dot photocurable adhesive layer.
  3. 根据权利要求1所述的量子点显示面板，还包括紫外光反射层，所述紫外光反射层位于所述透光区内的所述第三封装胶层和所述第二水氧阻隔层之间。The quantum dot display panel according to claim 1, further comprising an ultraviolet light reflection layer, the ultraviolet light reflection layer is located between the third encapsulation adhesive layer and the second water and oxygen barrier layer in the light transmission area between.
  4. 根据权利要求1所述的量子点显示面板，其中，所述第一图案化量子点光固化胶层包括多个沿所述第一方向延伸且沿所述第二方向排列的条状第一量子点凝胶层，所述第二图案化量子点光固化胶层包括多个沿所述第一方向延伸且沿所述第二方向排列的条状第二量子点凝胶层，所述第三图案化量子点光固化胶层包括多个沿所述第一方向延伸且沿所述第二方向排列的条状第三量子点凝胶层；The quantum dot display panel of claim 1, wherein the first patterned quantum dot photocurable adhesive layer comprises a plurality of strip-shaped first quantum dots extending along the first direction and arranged along the second direction dot gel layer, the second patterned quantum dot photocurable adhesive layer includes a plurality of strip-shaped second quantum dot gel layers extending along the first direction and arranged along the second direction, the third quantum dot gel layer The patterned quantum dot photocurable adhesive layer includes a plurality of strip-shaped third quantum dot gel layers extending along the first direction and arranged along the second direction;
    相邻挡墙结构之间的透光区内设置一个第一量子点凝胶层、一个第二量子 点凝胶层和一个第三量子点凝胶层。A first quantum dot gel layer, a second quantum dot gel layer and a third quantum dot gel layer are arranged in the light-transmitting area between adjacent retaining wall structures.
  5. 根据权利要求1所述的量子点显示面板，其中，所述第一图案化量子点光固化胶层包括多个沿所述第一方向延伸且沿所述第二方向排列的第一量子点凝胶列，所述第一量子点凝胶列包括多个沿所述第一方向排列的第一量子点凝胶块；所述第二图案化量子点光固化胶层包括多个沿所述第一方向延伸且沿所述第二方向排列的第二量子点凝胶列，所述第二量子点凝胶列包括多个沿所述第一方向排列的第二量子点凝胶块；所述第三图案化量子点光固化胶层包括多个沿所述第一方向延伸且沿所述第二方向排列的第三量子点凝胶列，所述第三量子点凝胶列包括多个沿所述第一方向排列的第三量子点凝胶块；The quantum dot display panel of claim 1 , wherein the first patterned quantum dot photocurable adhesive layer comprises a plurality of first quantum dot gels extending along the first direction and arranged along the second direction an adhesive column, the first quantum dot gel column includes a plurality of first quantum dot gel blocks arranged along the first direction; the second patterned quantum dot photocurable adhesive layer includes a plurality of quantum dot gel blocks arranged along the first direction; a second quantum dot gel array extending in one direction and arranged along the second direction, the second quantum dot gel array including a plurality of second quantum dot gel blocks arranged along the first direction; the The third patterned quantum dot photocurable adhesive layer includes a plurality of third quantum dot gel arrays extending along the first direction and arranged along the second direction, the third quantum dot gel array including a plurality of the third quantum dot gel blocks arranged in the first direction;
    相邻挡墙结构之间的透光区内设置一个第一量子点凝胶列、一个第二量子点凝胶列和一个第三量子点凝胶列。A first quantum dot gel column, a second quantum dot gel column and a third quantum dot gel column are arranged in the light-transmitting area between adjacent retaining wall structures.
  6. 一种量子点显示面板的制备方法，包括：A preparation method of a quantum dot display panel, comprising:
    提供紫外光背光模组和第一介质基材；Provide ultraviolet light backlight module and first medium substrate;
    在所述第一介质基材上形成第一水氧阻隔层；forming a first water and oxygen barrier layer on the first dielectric substrate;
    将所述第一水氧阻隔层安装于所述紫外光背光模组的出光面；installing the first water-oxygen barrier layer on the light-emitting surface of the ultraviolet backlight module;
    在所述第一介质基材远离所述紫外光背光模组的一侧形成多个条状挡墙结构，所述多个挡墙结构沿第一方向延伸且沿第二方向排列，所述第二方向垂直于所述第一方向，相邻挡墙结构之间的间隙构成透光区；A plurality of strip-shaped retaining wall structures are formed on the side of the first dielectric substrate away from the ultraviolet backlight module, the plurality of retaining wall structures extend along the first direction and are arranged in the second direction, and the first The two directions are perpendicular to the first direction, and the gap between adjacent retaining wall structures constitutes a light-transmitting area;
    在所述多个条状挡墙结构之间的多个透光区内从所述第一介质基材远离所述紫外光背光模组一侧依次形成层叠的第一图案化量子点光固化胶层、第一封装胶层、第二介质基材、第二图案化量子点光固化胶层、第二封装胶层、第三介质基材、第三图案化量子点光固化胶层和第三封装胶层；所述第一图案化量子点光固化胶层、所述第二图案化量子点光固化胶层和所述第三图案化量子点光固化胶层在所述第一水氧阻隔层上的垂直投影不交叠；所述第一图案化量子点光固化胶层、所述第二图案化量子点光固化胶层和所述第三图案化量子点光固化胶层分别为红光图案化量子点光固化胶层、绿光图案化量子点光固化胶层和蓝光图案化量子点光固化胶层中的一种，且不相同；Laminated first patterned quantum dot photocurable adhesives are sequentially formed in the plurality of light-transmitting regions between the plurality of strip-shaped retaining wall structures from the side of the first dielectric substrate away from the ultraviolet light backlight module. layer, the first encapsulation adhesive layer, the second dielectric substrate, the second patterned quantum dot photocurable adhesive layer, the second encapsulation adhesive layer, the third dielectric substrate, the third patterned quantum dot photocurable adhesive layer, and the third encapsulation adhesive layer; the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are in the first water and oxygen barrier The vertical projections on the layers do not overlap; the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer and the third patterned quantum dot photocurable adhesive layer are respectively red One of the photo-patterned quantum dot photo-curable adhesive layer, the green light-patterned quantum dot photo-curable adhesive layer, and the blue-light patterned quantum dot photo-curable adhesive layer, and they are different;
    在所述第三封装胶层远离所述紫外光背光模组一侧形成第二水氧阻隔层。A second water and oxygen barrier layer is formed on the side of the third encapsulation adhesive layer away from the ultraviolet backlight module.
  7. 根据权利要求6所述的制备方法，在所述第三封装胶层远离所述紫外光背光模组一侧形成第二水氧阻隔层之前，还包括：The preparation method according to claim 6, before the second water and oxygen barrier layer is formed on the side of the third encapsulation adhesive layer away from the ultraviolet backlight module, further comprising:
    在所述第三封装层远离所述紫外光背光模组一侧形成紫外光反射层。An ultraviolet light reflection layer is formed on the side of the third encapsulation layer away from the ultraviolet light backlight module.
  8. 根据权利要求6所述的制备方法，其中，在所述多个条状挡墙结构之间 的多个透光区内从所述第一介质基材远离所述紫外光背光模组一侧依次形成层叠的第一图案化量子点光固化胶层、第一封装胶层、第二介质基材、第二图案化量子点光固化胶层、第二封装胶层、第三介质基材、第三图案化量子点光固化胶层和第三封装胶层，包括：The preparation method according to claim 6, wherein in a plurality of light-transmitting regions between the plurality of strip-shaped retaining wall structures, the steps are arranged in order from a side of the first medium substrate away from the ultraviolet backlight module. The first patterned quantum dot photocurable adhesive layer, the first encapsulation adhesive layer, the second dielectric substrate, the second patterned quantum dot photocurable adhesive layer, the second encapsulation adhesive layer, the third dielectric substrate, the second Three patterned quantum dot photocurable adhesive layers and a third encapsulation adhesive layer, including:
    制备量子点凝胶；在所述多个透光区内所述第一介质基材远离所述紫外光背光模组一侧涂覆量子点凝胶；控制所述紫外光背光模组出射图案化的紫外光，以固化对应区域内的量子点凝胶；去除未被固化的量子点凝胶，以形成所述第一图案化量子点光固化胶层；preparing quantum dot gel; coating quantum dot gel on the side of the first medium substrate away from the ultraviolet light backlight module in the plurality of light-transmitting regions; controlling the output patterning of the ultraviolet light backlight module to cure the quantum dot gel in the corresponding area; remove the uncured quantum dot gel to form the first patterned quantum dot photocurable adhesive layer;
    在所述第一图案化量子点光固化胶层远离所述紫外光背光模组一侧形成第一封装胶层；forming a first encapsulation adhesive layer on the side of the first patterned quantum dot photocurable adhesive layer away from the ultraviolet backlight module;
    采用形成所述第一图案化量子点光固化胶层的方法，在所述第一封装胶层远离所述紫外光背光模组一侧形成所述第二图案化量子点光固化胶层；Using the method of forming the first patterned quantum dot photocurable adhesive layer, the second patterned quantum dot photocurable adhesive layer is formed on the side of the first encapsulation adhesive layer away from the ultraviolet light backlight module;
    在所述第二图案化量子点光固化胶层远离所述紫外光背光模组一侧形成第二封装胶层；forming a second encapsulation adhesive layer on the side of the second patterned quantum dot photocurable adhesive layer away from the ultraviolet backlight module;
    采用形成所述第一图案化量子点光固化胶层的方法，在所述第二封装胶层远离所述紫外光背光模组一侧形成所述第三图案化量子点光固化胶层；Using the method for forming the first patterned quantum dot photocurable adhesive layer, the third patterned quantum dot photocurable adhesive layer is formed on the side of the second encapsulation adhesive layer away from the ultraviolet light backlight module;
    在所述第三图案化量子点光固化胶层远离所述紫外光背光模组一侧形成第三封装胶层。A third encapsulation adhesive layer is formed on the side of the third patterned quantum dot photocurable adhesive layer away from the ultraviolet backlight module.
  9. 根据权利要求8所述的制备方法，其中，所述制备量子点凝胶，包括：The preparation method according to claim 8, wherein the preparation of quantum dot gel comprises:
    通过溶液法制备量子点溶液；Preparation of quantum dot solution by solution method;
    在所述量子点溶液中添加胶水单体，形成胶水混合液；adding a glue monomer to the quantum dot solution to form a glue mixture;
    在所述胶水混合液中添加紫外光引发剂，进行搅拌，形成所述量子点凝胶。An ultraviolet photoinitiator is added to the glue mixture and stirred to form the quantum dot gel.
  10. 根据权利要9所述的制备方法，其中，所述通过溶液法制备量子点溶液包括：The preparation method according to claim 9, wherein the preparation of the quantum dot solution by a solution method comprises:
    通过溶液法制备量子点核心材料溶液；Preparation of quantum dot core material solution by solution method;
    在所述量子点核心材料中添加包覆层材料形成核壳结构量子点材料溶液；adding a coating material to the quantum dot core material to form a core-shell structure quantum dot material solution;
    在所述核壳结构量子点材料溶液中添加表面配体材料溶液；adding a surface ligand material solution to the core-shell structure quantum dot material solution;
    通过离心以及提纯处理获得所述量子点溶液。The quantum dot solution is obtained by centrifugation and purification.
  11. 根据权利要求10所述的制备方法，其中，所述量子点核心材料溶液包括A xM yE z体系；其中，A元素为钡Ba、银Ag、钠Na、铁Fe、铟In、镉Cd、锌Zn、镓Ga、镁Mg、铅Pb和铯Cs中的一种，M元素为硫S、氯Cl、氧O、 砷As、氮N、磷P、硒Se、碲Te、钛Ti和锆Zr、Pb中的一种，E元素为S、As、Se、O、Cl、溴Br和碘I中的一种。 The preparation method according to claim 10, wherein the quantum dot core material solution comprises an A x My E z system; wherein, the A element is barium Ba, silver Ag, sodium Na, iron Fe, indium In, cadmium Cd , one of zinc Zn, gallium Ga, magnesium Mg, lead Pb and cesium Cs, M element is sulfur S, chlorine Cl, oxygen O, arsenic As, nitrogen N, phosphorus P, selenium Se, tellurium Te, titanium Ti and One of zirconium Zr, Pb, E element is one of S, As, Se, O, Cl, bromine Br and iodine I.
  12. 根据权利要求11所述的制备方法，其中，x的取值范围为0.3～2，y的取值范围为0.5～3，z的取值范围为0～4。The preparation method according to claim 11, wherein the value range of x is 0.3-2, the value range of y is 0.5-3, and the value range of z is 0-4.
  13. 根据权利要求11所述的制备方法，其中，所述量子点核心材料溶液包括硒化镉CdSe、磷化铟InP和溴铅铯CsPbBr3中的一种或至少两种的复合材料。The preparation method according to claim 11, wherein the quantum dot core material solution comprises a composite material of one or at least two of cadmium selenide CdSe, indium phosphide InP and bromine lead cesium CsPbBr3.
  14. 根据权利要求11所述的制备方法，其中，所述包覆层材料包括以下一种材料或多种材料的复合：有机高分子溶液、无机氧化物、金属氧化物、金属单质、合金材料。The preparation method according to claim 11, wherein the coating layer material comprises one or a combination of the following materials: organic polymer solution, inorganic oxide, metal oxide, metal element, alloy material.
  15. 根据权利要求6所述的制备方法，其中，在所述第一介质基材远离所述紫外光背光模组的一侧形成多个条状挡墙结构，包括：The preparation method according to claim 6, wherein forming a plurality of strip-shaped retaining wall structures on a side of the first dielectric substrate away from the ultraviolet backlight module, comprising:
    在所述第一介质基材远离所述紫外光背光模组的一侧涂覆挡墙材料胶膜；Coating a retaining wall material film on the side of the first medium substrate away from the ultraviolet backlight module;
    控制所述紫外光背光模组中位于所述多个透光区内的光源出射紫外光，以溶解对应区域内的挡墙材料胶膜；controlling the light sources located in the plurality of light-transmitting areas in the ultraviolet backlight module to emit ultraviolet light, so as to dissolve the film of the barrier wall material in the corresponding area;
    去除溶解后的挡墙材料胶膜，以形成所述多个条状挡墙结构。The dissolved adhesive film of the retaining wall material is removed to form the plurality of strip-shaped retaining wall structures.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103091895A (en) * 2013-01-22 2013-05-08 北京京东方光电科技有限公司 Display device and manufacturing method thereof
CN104145210A (en) * 2012-02-23 2014-11-12 英特曼帝克司公司 Photoluminescence color display
US20160062003A1 (en) * 2013-03-05 2016-03-03 Ronald Steven Cok Filled large-format imprinted structure
CN109166876A (en) * 2018-09-12 2019-01-08 京东方科技集团股份有限公司 micro-display device and preparation method thereof
CN208970563U (en) * 2018-11-30 2019-06-11 昆山工研院新型平板显示技术中心有限公司 A kind of display panel and display device
CN110224012A (en) * 2019-06-18 2019-09-10 京东方科技集团股份有限公司 Display panel and display device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI221678B (en) * 2003-04-04 2004-10-01 Toppoly Optoelectronics Corp Method of forming sealing structure for electroluminescent organic device
CN203930105U (en) * 2014-06-26 2014-11-05 京东方科技集团股份有限公司 Flexible membrane, organic LED display panel and display device
EP3274765A4 (en) * 2015-03-23 2018-10-17 Intematix Corporation Photoluminescence color display
KR20180047559A (en) * 2016-10-31 2018-05-10 엘지디스플레이 주식회사 Organic light emitting display device
KR20180090421A (en) * 2017-02-02 2018-08-13 삼성디스플레이 주식회사 Organic light emitting display device
US10490777B2 (en) * 2018-01-31 2019-11-26 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. OLED display and manufacturing method thereof
CN108288640B (en) * 2018-01-31 2020-04-10 武汉华星光电半导体显示技术有限公司 OLED display and manufacturing method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104145210A (en) * 2012-02-23 2014-11-12 英特曼帝克司公司 Photoluminescence color display
CN103091895A (en) * 2013-01-22 2013-05-08 北京京东方光电科技有限公司 Display device and manufacturing method thereof
US20160062003A1 (en) * 2013-03-05 2016-03-03 Ronald Steven Cok Filled large-format imprinted structure
CN109166876A (en) * 2018-09-12 2019-01-08 京东方科技集团股份有限公司 micro-display device and preparation method thereof
CN208970563U (en) * 2018-11-30 2019-06-11 昆山工研院新型平板显示技术中心有限公司 A kind of display panel and display device
CN110224012A (en) * 2019-06-18 2019-09-10 京东方科技集团股份有限公司 Display panel and display device

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