CN112631019A - Preparation method of quantum dot display panel and quantum dot display panel - Google Patents
Preparation method of quantum dot display panel and quantum dot display panel Download PDFInfo
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- CN112631019A CN112631019A CN202011563835.XA CN202011563835A CN112631019A CN 112631019 A CN112631019 A CN 112631019A CN 202011563835 A CN202011563835 A CN 202011563835A CN 112631019 A CN112631019 A CN 112631019A
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133605—Direct backlight including specially adapted reflectors
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The embodiment of the invention discloses a quantum dot display panel and a preparation method thereof. Preparing a quantum dot solution by a solution method; adding a glue monomer, a photoinitiator and a chelating agent to form quantum dot gel; coating quantum dot gel on a quantum dot substrate and respectively forming red light and green light patterned quantum dot color film structures by adopting an imprinting method; and simultaneously, providing a blue light excitation module to excite the corresponding red light and green light patterned quantum dot color film structures to emit red light and green light, and realizing full-screen color display by matching with a blue light area.
Description
Technical Field
The embodiment of the invention relates to a quantum dot display panel technology, in particular to a preparation method of a quantum dot display panel and the quantum dot display panel.
Background
The particle size of a Quantum Dot (QD) material is generally between 1 nm and 10nm, and because electrons and holes are limited by quanta, a continuous energy band structure is changed into a discrete energy level structure, so that the emission spectrum is very narrow (20-30nm), the chromaticity is high, the display color gamut is wide, and the display color gamut can greatly exceed the color gamut range of NTSC (more than 100%); meanwhile, the light absorption loss of the color filter is small, and low-power-consumption display can be realized. Due to its special characteristics, quantum dots are emerging as a new generation of luminescent materials in LED display applications.
The quantum dot color film is a key component of a display device for realizing ultrahigh color gamut full-color display, and in the prior art, red and green quantum dots are mixed together to form a quantum dot color conversion film, and then the quantum dot color conversion film is matched with a liquid crystal display module and a blue light LED light source to realize high color gamut display. However, this solution has the following problems: 1) the red, green and blue lights after color conversion need to be filtered by a color filter, and the luminous efficiency is extremely low; 2) the red quantum dots and the green quantum dots are directly mixed, and the two quantum dots can mutually influence in the preparation and use processes of the diaphragm, so that the performance is deteriorated, and the reliability of the diaphragm is poor; 3) the application field is limited, and the active light-emitting Micro-LED and OLED display device can not be matched for use.
Disclosure of Invention
The embodiment of the invention provides a preparation method of a quantum dot display panel and the quantum dot display panel, which are used for solving the problems that in the prior art, a color filter is required to be used for filtering red, green and blue light after color conversion, and the luminous efficiency is low; the red quantum dots and the green quantum dots are directly mixed, so that the reliability of the diaphragm is poor; can not match the use of Micro-LED and OLED display devices of active light emitting type.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a quantum dot display panel, including:
s1, preparing a quantum dot solution by a solution method;
s2, adding glue monomers into the quantum dot solution to form a glue mixed solution;
s3, adding a photoinitiator and a chelating agent into the glue mixed solution to form quantum dot gel;
s4, coating quantum dot gel on the quantum dot substrate and forming a patterned quantum dot gel layer by adopting an imprinting method;
s5, preparing a packaging protection layer on the patterned quantum dot gel layer to form a patterned quantum dot color film structure;
s6, sequentially adopting S1 to S5 to form a red light patterned quantum dot color film structure and a green light patterned quantum dot color film structure respectively;
s7, arranging a bonding layer on the red light patterned quantum dot color film structure, and arranging the green light patterned quantum dot color film structure on the bonding layer to form a quantum dot color film laminated structure;
s8, providing a blue light excitation module, and arranging the blue light excitation module on one side of the red light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure;
s9, arranging a first blue light reflecting layer on one side, away from the red light patterned quantum dot color film structure, of the green light patterned quantum dot color film structure; the first blue light reflecting layer is provided with a hollow area;
the red light patterned quantum dot gel layer in the red light patterned quantum dot color film structure and the green light patterned quantum dot gel layer in the green light patterned quantum dot color film structure are not overlapped in vertical projection on the quantum dot substrate; the quantum dot color film laminated structure also comprises a blue light area; the vertical projections of the red light patterned quantum dot gel layer and the green light patterned quantum dot gel layer on the quantum dot substrate are not overlapped with the blue light area; and the vertical projection of the hollow-out areas on the quantum dot substrate is overlapped with the blue light area.
Optionally, the preparing the quantum dot solution by the solution method includes:
s11, preparing a quantum dot core material solution by a solution method;
s12, adding a coating layer material into the quantum dot core material to form a core-shell structure quantum dot material solution;
s13, adding a surface ligand material solution into the core-shell structure quantum dot material solution;
and S14, obtaining the quantum dot solution through centrifugation and purification treatment.
Optionally, the quantum dot core material solution comprises an AxMyEz system; wherein, the element A is one of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb and Cs, the element M is one of S, Cl, O, As, N, P, Se, Te, Ti, Zr and Pb, and the element E is one of S, As, Se, O, Cl, Br and I.
Optionally, the value range of x is 0.3-2, the value range of y is 0.5-3, and the value range of z is 0-4.
Optionally, the quantum dot core material solution includes a composite of one or at least two of CdSe, InP, and CsPbBr 3.
Optionally, the coating material includes at least one of an organic polymer solution, an inorganic oxide, a metal simple substance, and an alloy material.
Optionally, adding a photoinitiator and a chelating agent into the glue mixture to form a quantum dot gel includes:
adding a photoinitiator and a chelating agent into the glue mixed solution, stirring and reacting for 0.5-12h at 50-90 ℃ to form the quantum dot gel.
Optionally, the forming a patterned quantum dot gel layer by using an imprinting method includes:
adopting a patterned imprinting mold to imprint the quantum dot gel; wherein the patterned imprint mold includes a plurality of grooves.
Optionally, the method further includes:
and arranging a second blue light reflecting layer on one side of the blue light excitation module, which is far away from the quantum dot color film laminated structure.
In a second aspect, an embodiment of the present invention further provides a quantum dot display panel, including:
a blue light excitation module;
the quantum dot color film laminated structure is positioned on the light-emitting surface of the blue light excitation module; the quantum dot color film lamination structure comprises a red light patterned quantum dot color film structure and a green light patterned quantum dot color film structure which are laminated; the red light patterned quantum dot color film structure is positioned between the green light patterned quantum dot color film structure and the blue light excitation module;
the first blue light reflecting layer is positioned on one side, away from the blue light excitation module, of the quantum dot color film laminated structure; the first blue light reflecting layer is provided with a hollow area;
the red light patterned quantum dot gel layer in the red light patterned quantum dot color film structure and the green light patterned quantum dot gel layer in the green light patterned quantum dot color film structure are not overlapped in vertical projection on the plane quantum dot substrate where the blue light excitation module is located; the quantum dot color film laminated structure also comprises a blue light area; the vertical projections of the red light patterned quantum dot gel layer and the green light patterned quantum dot gel layer on the quantum dot substrate are not overlapped with the blue light area; and the vertical projection of the hollow-out areas on the quantum dot substrate is overlapped with the blue light area.
The quantum dot solution is prepared by a solution method; adding a glue monomer, a photoinitiator and a chelating agent to form quantum dot gel; coating quantum dot gel on the quantum dot substrate and forming a patterned quantum dot gel layer by adopting an imprinting method; preparing a packaging protective layer on the patterned quantum dot gel layer, and sequentially adopting the steps to form a red light and green light patterned quantum dot color film structure; forming a quantum dot color film laminated structure by the red light patterned quantum dot color film structure and the green light patterned quantum dot color film structure; and meanwhile, a blue light excitation module is provided, the light emitted by the blue light excitation module excites the red light patterned quantum dot color film structure to emit red light, the light emitted by the blue light excitation module excites the green light patterned quantum dot color film structure to emit green light, and the full-color display can be realized by matching with a blue light area. Excessive blue light passing through the red light patterned quantum dot color film structure and the green light patterned quantum dot color film structure can be reflected by the first blue light reflection layer arranged above the quantum dot color film laminated structure, so that blue light can be prevented from being emitted above the quantum dot color film laminated structure, and in addition, the blue light reflected back by the first blue light reflection layer continuously excites the red light patterned quantum dot color film structure and the green light patterned quantum dot color film structure, so that blue light waste can be avoided, and the light emitting efficiency of the device is improved.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a quantum dot display panel according to an embodiment of the present invention;
fig. 2 is a schematic flow chart illustrating a process of preparing a quantum dot core material solution in a method for preparing a quantum dot display panel according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an imprinting method according to an embodiment of the present invention;
fig. 4 is a schematic view of a quantum dot color film lamination structure according to an embodiment of the present invention;
fig. 5 is a schematic top view of a quantum dot color film stacked structure according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a quantum dot display panel according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic flow chart of a method for manufacturing a quantum dot display panel according to an embodiment of the present invention, where the method specifically includes the following steps:
s1, preparing a quantum dot solution by a solution method;
alternatively, the solution method for preparing the quantum dot solution may include a metal organic synthesis method, a water phase direct synthesis method, a thermal injection synthesis method, an anti-solvent synthesis method, and the like.
Fig. 2 is a schematic flow chart of a preparation method of a quantum dot solution according to an embodiment of the present invention, referring to fig. 2, optionally, the quantum dot solution may be prepared by the following method:
and S11, preparing the quantum dot core material solution by a solution method.
Optionally, the quantum dot core material solution comprises an AxMyEz system; wherein, the element A is one of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb and Cs, the element M is one of S, Cl, O, As, N, P, Se, Te, Ti, Zr and Pb, and the element E is one of S, As, Se, O, Cl, Br and I.
Optionally, the value range of x is 0.3-2, the value range of y is 0.5-3, and the value range of z is 0-4.
When the quantum dot core material is excited by a blue light source, excitation fluorescence with specific wavelength can be emitted, and the emitted fluorescence spectrum is determined by the chemical composition and the particle size of the quantum dot core material. Due to quantum size effect, the fluorescence spectrum emitted by the material with the same chemical composition is red-shifted from green light to red light along with the increase of the particle size of the quantum dot core material. The adopted quantum dot core material for emitting red light and the quantum dot core material for emitting green light can be the same chemical composition, but the value ranges of x, y and z are adjusted to synthesize quantum dot core materials with different grain diameters, and can also be quantum dot core materials with different chemical compositions.
Optionally, the quantum dot core material solution comprises a composite of one or at least two of CdSe, InP and CsPbBr 3.
Among them, the smaller the size of the quantum dot is, the more remarkable the blue shift phenomenon is due to the unique light emitting characteristics of the quantum dot. For example, for a cadmium selenide (CdSe) quantum dot, the color of light emitted by the cadmium selenide quantum dot changes from red to blue as it decreases from ion to 2nm, and blue light is emitted when the size of the cadmium selenide quantum dot is greater than or equal to 2nm and less than 5 nm; emitting green light when the size of the cadmium selenide quantum dots is greater than or equal to 5nm and less than 8 nm; and emitting red light when the size of the cadmium selenide quantum dots is larger than or equal to 8nm and smaller than lOnm. For perovskite quantum dots (CsPbX3(X ═ Cl, Br, I)), by adjusting the difference in halogen elements, quantum dot core materials formed of different chemical groups are formed, resulting in different colors of light emission.
S12, adding a coating layer material into the quantum dot core material to form a core-shell structure quantum dot material solution;
optionally, the coating material includes at least one of an organic polymer solution, an inorganic oxide, a metal simple substance, and an alloy material.
The coating material can be CdS, ZnSe, ZnCdS2, ZnS, PbS, Zn0, Al2O3, SiO2, simple substance of Au, simple substance of Ag, simple substance of Cu, etc.
And coating the quantum dot material with the coating material under the conditions of pH regulation, reaction temperature, reaction time and the like to form the quantum dot material with the core-shell structure.
S13, adding a surface ligand material solution into the core-shell structure quantum dot material solution;
the surface ligand material can be a high molecular polymer and has better compatibility with the glue monomer. The surface ligand material reacts with and bonds together with the quantum dot shell material.
And S14, obtaining the quantum dot solution through centrifugation and purification treatment.
After the quantum dot solution is formed by the above method, steps S2 to S9 are sequentially performed.
S2, adding glue monomers into the quantum dot solution to form a glue mixed solution;
after the glue monomer is added into the quantum dot solution, proper stirring can be carried out.
S3, adding a photoinitiator and a chelating agent into the glue mixed solution to form quantum dot gel;
optionally, adding a photoinitiator and a chelating agent into the glue mixture to form the quantum dot gel comprises: adding a photoinitiator and a chelating agent into the glue mixed solution, stirring and reacting for 0.5-12h at 50-90 ℃ to form the quantum dot gel.
The photoinitiator is also called a photosensitizer or a photocuring agent, and is a compound which can absorb energy with a certain wavelength in an ultraviolet region (250-420 nm) or a visible light region (400-800 nm) to generate free radicals, cations and the like so as to initiate the polymerization, crosslinking and curing of monomers. Common photoinitiators include cleavage-type photoinitiators that initiate polymerization crosslinking and grafting reactions by absorbing ultraviolet quanta from intense ultraviolet light emission, resulting in the formation of solid films within fractions of a second of the liquid, such as 1173, 184, 907, 369, 1490, 1700, and the like. Photoinitiators, which form free radicals, such as BP, by hydrogen abstraction reactions. Cationic photoinitiators including diazonium salts, diaryliodonium salts, triarylsulfonium salts, alkylsulfonium salts, iron arene salts, sulfonyloxy ketones, and triarylsiloxy ethers. Its basic action features that the light activation makes the molecule to excited state, and the molecule takes part in serial decomposition reaction to generate super-strong proton acid (also called Bronsted acid) as active species for cationic polymerization to initiate the polymerization of epoxy compound, vinyl ether, lactone, acetal, cyclic ether, etc. The chelating agent is a complex having a cyclic structure and is obtained by chelation in which two or more ligands form a chelate ring with the same metal ion. Commonly used organic chelating agents such as complexone (including nitrilotriacetic acid (NTA), ethylenediaminetetraacetic acid, etc.), dithizone, 8-hydroxyquinoline, phenanthroline (C12H8N2), potassium sodium tartrate, ammonium citrate, and inorganic chelating agents such as polyphosphates.
S4, coating quantum dot gel on the quantum dot substrate and forming a patterned quantum dot gel layer by adopting an imprinting method;
s5, preparing a packaging protection layer on the patterned quantum dot gel layer to form a patterned quantum dot color film structure;
and controlling the pattern size of the patterned quantum dot gel layer formed by imprinting according to the pixel size design requirement of the quantum dot display panel. Fig. 3 is a schematic view of an imprinting method according to an embodiment of the present invention, referring to fig. 3, taking the formation of a red-light patterned quantum dot color film structure as an example, for example, a micron-scale imprinting method is adopted, in which a red-light quantum dot gel 21 is first coated on a first quantum dot substrate 20, and a first mold 22 is used for imprinting. The mold pattern is designed according to the pixel size design requirement of the quantum dot display panel, for example, the first mold 22 has a groove 23, the width of the groove 23 is the pixel width of the quantum dot display panel, the width is, for example, 5-2000 μm, and the depth is 10-75 μm. The red patterned quantum dot gel layer 24 is formed by imprinting through the first mold 22. In the imprinting process, the quantum dot gel in the groove of the first mold 22 is left on the first quantum dot substrate 20, the quantum dot gel at other positions is extruded out of the first quantum dot substrate 20, and then illumination or high temperature treatment is performed to cure the red light patterned quantum dot gel layer 24; and finally, coating packaging protection glue on the red light patterning quantum dot gel layer 24, and curing the glue into a packaging protection layer 25 to finish the preparation of the red light patterning quantum dot color film structure.
S6, sequentially adopting S1 to S5 to form a red light patterned quantum dot color film structure and a green light patterned quantum dot color film structure respectively;
s7, arranging a bonding layer on the red light patterned quantum dot color film structure, and arranging the green light patterned quantum dot color film structure on the bonding layer to form a quantum dot color film laminated structure;
optionally, S1 to S5 may be respectively sequentially adopted to form a red light patterned quantum dot color film structure and a green light patterned quantum dot color film structure, and then the green light patterned quantum dot color film structure is disposed on the red light patterned quantum dot color film structure through the bonding layer. After the red-light patterned quantum dot color film structure is formed through steps S1 to S5, a bonding layer is arranged on the red-light patterned quantum dot color film structure, and a green-light patterned quantum dot color film structure is formed on the side, away from the red-light patterned quantum dot color film structure, of the bonding layer sequentially through steps S1 to S5.
Fig. 4 is a schematic diagram of a quantum dot color film lamination structure according to an embodiment of the present invention, referring to fig. 4, after a red-light patterned quantum dot color film structure 30 is formed by using S1 to S5, an adhesive layer 31 is formed, a second quantum dot substrate 32 of the green-light patterned quantum dot color film structure is attached to the adhesive layer 31, and then imprinting of a green-light patterned quantum dot gel is completed in a process from S1 to S5, that is, a green-light quantum dot gel 33 is coated on the second quantum dot substrate 32, and imprinting is performed by using a second mold 42. The green light patterned quantum dot gel layer 34 is formed by imprinting through the second mold 42. Then, carrying out illumination or high-temperature treatment to solidify the green light patterned quantum dot gel layer 34; and finally, coating packaging protection glue on the green light patterning quantum dot gel layer 34, curing the glue into a packaging protection layer 35, completing the preparation of the green light patterning quantum dot color film structure 40, and finally forming the quantum dot color film laminated structure.
In the process of preparing the quantum dot gel layer, the width of the groove in the die can be designed according to the size of the pixel point, the red-green light patterned quantum dot gel layer can be selected, the patterned quantum dot gel layer is formed by adopting an imprinting method, and the quantum dot materials on the quantum dot gel layer can be distributed in a strip shape or a block shape. Fig. 5 is a schematic diagram of a top-down structure of a quantum dot color film lamination structure according to an embodiment of the present invention, and as shown in fig. 5, a red light patterned quantum dot gel layer in the red light patterned quantum dot color film structure includes a plurality of strip-shaped red light quantum dot gel structures 51; the green light patterned quantum dot gel layer in the green light patterned quantum dot color film structure comprises a plurality of strip-shaped green light quantum dot gel structures 52; the red light patterned quantum dot gel layer in the red light patterned quantum dot color film structure and the green light patterned quantum dot gel layer in the green light patterned quantum dot color film structure are not overlapped in vertical projection on the quantum dot base material. The quantum dot color film laminated structure further includes a blue light region 53; the vertical projections of the red patterned quantum dot gel layer and the green patterned quantum dot gel layer on the quantum dot substrate are not overlapped with the blue light region 53. According to the embodiment of the invention, a lamination mode is adopted, the green light patterned quantum dot color film structure is superposed above the red light patterned quantum dot color film structure, so that the reabsorption of the long-wave quantum dot material (red light patterned quantum dot gel layer) on the light emitted by the short-wave quantum dot material (green light patterned quantum dot gel layer) is reduced, and the luminous efficiency of the display device is improved; meanwhile, the quantum dot color film structures are patterned independently, so that mutual contact and influence among quantum dots are avoided, and the reliability of the quantum dot color film is improved.
S8, providing a blue light excitation module, and arranging the blue light excitation module at one side of the red light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure;
s9, arranging a first blue light reflecting layer on one side of the green light patterned quantum dot color film structure, which is far away from the red light patterned quantum dot color film structure; the first blue reflecting layer is provided with a hollow area;
the blue light excitation module comprises a plurality of backlight sources arranged in an array manner, and pixel level backlight is realized; the backlight source may be, for example, an OLED element, a Mini-LED, a Micro-LED, or the like. The peak wavelength of the light emitted by the backlight in the blue light excitation module can be, for example, 420-480nm blue light. And the position of each backlight source corresponds to one sub-pixel of the quantum dot display panel, and the patterned quantum dot color film structure at the position of the sub-pixel is correspondingly excited to emit light with corresponding color.
Because the first blue light reflecting layer is arranged on the side of the green light patterned quantum dot color film structure, which is far away from the red light patterned quantum dot color film structure, the first blue light reflecting layer is a transparent material which can selectively transmit red light and green light and simultaneously reflect blue light with the emission peak wavelength of 420-480 nm. The first blue light reflecting layer is provided with a hollow area corresponding to the blue light area, and the vertical projection of the hollow area on the quantum dot substrate is overlapped with the blue light area, so that the blue light emitted by the blue light excitation module is ensured to be directly emitted in the blue light area; each backlight of the blue light excitation module emits blue light, the patterned quantum dot color film structure at the corresponding position is excited to emit red light, light or green light, and the blue light area is directly emitted out of the blue light due to the fact that the quantum dot gel layer is not arranged, and full-color display can be achieved. Excessive blue light passing through the red light patterned quantum dot color film structure and the green light patterned quantum dot color film structure can be reflected by the first blue light reflection layer arranged above the quantum dot color film laminated structure, so that blue light can be prevented from being emitted above the quantum dot color film laminated structure, and in addition, the blue light reflected back by the first blue light reflection layer continuously excites the red light patterned quantum dot color film structure and the green light patterned quantum dot color film structure, so that blue light waste can be avoided, and the light emitting efficiency of the device is improved.
Optionally, a second blue light reflecting layer may be further disposed on a side of the blue light excitation module away from the quantum dot color film lamination structure. The second blue light reflecting layer can reflect the blue light emitted by the blue light excitation module to the quantum dot color film laminated structure again, so that the utilization rate of the blue light is further improved, and the luminous efficiency of the device is improved.
According to the technical scheme, the problems of direct mixing of red and green quantum dots, poor film forming property and low blue light utilization rate are solved by preparing the red and green light patterned quantum dot color film laminated structure and arranging the blue light excitation module, the first blue light reflection layer and the second blue light reflection layer, and the beneficial effect of high overall luminous efficiency of the display device is achieved.
On the basis of the above embodiment, optionally, after forming the quantum dot color film stacked structure, the method further includes: forming a first isolation film on one side of the red light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure; and forming a second isolating film on one side of the green light patterned quantum dot color film structure, which is far away from the red light patterned quantum dot color film structure. Referring to fig. 6, a first isolation film 601 is formed on a side of the red light patterned quantum dot color film structure away from the green light patterned quantum dot color film structure; a second isolation film 602 is formed on a side of the green light patterned quantum dot color film structure away from the red light patterned quantum dot color film structure. The first isolation film 601 and the second isolation film 602 may be formed by vacuum evaporation or magnetron sputtering, for example. Optionally, the first isolation film 601 and/or the second isolation film 602 include at least one of Al2O3, ZrO2, TiO2, Fe2O3, and ZnO2, and have a thickness of 3 to 50 nm. The first isolation film 601 and/or the second isolation film 602 can block the corrosion of external water and oxygen to the quantum dot color film laminated structure.
Embodiments of the present invention further provide a quantum dot display panel, which can be formed by using the method for manufacturing a quantum dot display panel provided in any embodiment of the present invention, for example, referring to fig. 6, including:
a blue light excitation module 60;
a quantum dot color film laminated structure 61 positioned on the light-emitting surface of the blue light excitation module 60; the quantum dot color film lamination structure 61 comprises a red light patterned quantum dot color film structure 30 and a green light patterned quantum dot color film structure 40 which are laminated; the red light patterned quantum dot color film structure 30 is positioned between the green light patterned quantum dot color film structure 40 and the blue light excitation module 60;
the first blue light reflecting layer 62 is positioned on one side, away from the blue light excitation module 60, of the quantum dot color film laminated structure 61; the first blue reflecting layer 62 is provided with a hollow area. Optionally, the method further includes: and a second blue light reflecting layer 63 is arranged on one side of the blue light excitation module 60, which is far away from the quantum dot color film laminated structure.
The red light patterned quantum dot gel layer 24 in the red light patterned quantum dot color film structure 30 and the green light patterned quantum dot gel layer 34 in the green light patterned quantum dot color film structure 40 do not overlap in the vertical projection of the plane where the blue light excitation module 60 is located; the quantum dot color film laminated structure 61 further includes a blue light region; the vertical projection of the red light patterned quantum dot gel layer 24 and the green light patterned quantum dot gel layer 34 on the plane of the blue light excitation module is not overlapped with the vertical projection of the blue light region on the plane of the blue light excitation module. The vertical projection of the hollow area of the first blue light reflecting layer 62 on the plane of the blue light excitation module overlaps with the vertical projection of the blue light area on the plane of the blue light excitation module.
The quantum dot display panel device provided by the embodiment of the invention can be formed by adopting the preparation method of the quantum dot display panel provided by any embodiment of the invention, and has corresponding functions and beneficial effects of the adoption method.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A preparation method of a quantum dot display panel is characterized by comprising the following steps:
s1, preparing a quantum dot solution by a solution method;
s2, adding glue monomers into the quantum dot solution to form a glue mixed solution;
s3, adding a photoinitiator and a chelating agent into the glue mixed solution to form quantum dot gel;
s4, coating quantum dot gel on the quantum dot substrate and forming a patterned quantum dot gel layer by adopting an imprinting method;
s5, preparing a packaging protection layer on the patterned quantum dot gel layer to form a patterned quantum dot color film structure;
s6, sequentially adopting S1 to S5 to form a red light patterned quantum dot color film structure and a green light patterned quantum dot color film structure respectively;
s7, arranging a bonding layer on the red light patterned quantum dot color film structure, and arranging the green light patterned quantum dot color film structure on the bonding layer to form a quantum dot color film laminated structure;
s8, providing a blue light excitation module, and arranging the blue light excitation module on one side of the red light patterned quantum dot color film structure, which is far away from the green light patterned quantum dot color film structure;
s9, arranging a first blue light reflecting layer on one side, away from the red light patterned quantum dot color film structure, of the green light patterned quantum dot color film structure; the first blue light reflecting layer is provided with a hollow area;
the red light patterned quantum dot gel layer in the red light patterned quantum dot color film structure and the green light patterned quantum dot gel layer in the green light patterned quantum dot color film structure are not overlapped in vertical projection on the quantum dot substrate; the quantum dot color film laminated structure also comprises a blue light area; the vertical projections of the red light patterned quantum dot gel layer and the green light patterned quantum dot gel layer on the quantum dot substrate are not overlapped with the blue light area; and the vertical projection of the hollow-out areas on the quantum dot substrate is overlapped with the blue light area.
2. The method of manufacturing a quantum dot display panel according to claim 1, wherein the preparing a quantum dot solution by a solution method includes:
s11, preparing a quantum dot core material solution by a solution method;
s12, adding a coating layer material into the quantum dot core material to form a core-shell structure quantum dot material solution;
s13, adding a surface ligand material solution into the core-shell structure quantum dot material solution;
and S14, obtaining the quantum dot solution through centrifugation and purification treatment.
3. The method of manufacturing a quantum dot display panel according to claim 2, wherein the quantum dot core material solution comprises an AxMyEz system; wherein, the element A is one of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb and Cs, the element M is one of S, Cl, O, As, N, P, Se, Te, Ti, Zr and Pb, and the element E is one of S, As, Se, O, Cl, Br and I.
4. The method for manufacturing the quantum dot display panel according to claim 3, wherein x is 0.3-2, y is 0.5-3, and z is 0-4.
5. The method of claim 3, wherein the quantum dot core material solution comprises a composite of one or at least two of CdSe, InP, and CsPbBr 3.
6. The method of claim 3, wherein the cladding material comprises at least one of organic polymer solution, inorganic oxide, metal simple substance, and alloy material.
7. The method of claim 1, wherein the step of adding a photoinitiator and a chelating agent to the glue mixture to form a quantum dot gel comprises:
adding a photoinitiator and a chelating agent into the glue mixed solution, stirring and reacting for 0.5-12h at 50-90 ℃ to form the quantum dot gel.
8. The method for manufacturing a quantum dot display panel according to claim 1, wherein the forming a patterned quantum dot gel layer by an imprinting method comprises:
adopting a patterned imprinting mold to imprint the quantum dot gel; wherein the patterned imprint mold includes a plurality of grooves.
9. The method for manufacturing a quantum dot display panel according to claim 1, further comprising:
and arranging a second blue light reflecting layer on one side of the blue light excitation module, which is far away from the quantum dot color film laminated structure.
10. A quantum dot display panel, comprising:
a blue light excitation module;
the quantum dot color film laminated structure is positioned on the light-emitting surface of the blue light excitation module; the quantum dot color film lamination structure comprises a red light patterned quantum dot color film structure and a green light patterned quantum dot color film structure which are laminated; the red light patterned quantum dot color film structure is positioned between the green light patterned quantum dot color film structure and the blue light excitation module;
the first blue light reflecting layer is positioned on one side, away from the blue light excitation module, of the quantum dot color film laminated structure; the first blue light reflecting layer is provided with a hollow area;
the red light patterned quantum dot gel layer in the red light patterned quantum dot color film structure and the green light patterned quantum dot gel layer in the green light patterned quantum dot color film structure are not overlapped in the vertical projection of the plane where the blue light excitation module is located; the quantum dot color film laminated structure also comprises a blue light area; the vertical projections of the red light patterned quantum dot gel layer and the green light patterned quantum dot gel layer on the plane of the blue light excitation module are not overlapped with the vertical projection of the blue light area on the plane of the blue light excitation module; the vertical projection of the hollow area on the plane where the blue light excitation module is located is overlapped with the vertical projection of the blue light area on the plane where the blue light excitation module is located.
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