WO2022134092A1 - 显示装置、显示面板及其制造方法 - Google Patents

显示装置、显示面板及其制造方法 Download PDF

Info

Publication number
WO2022134092A1
WO2022134092A1 PCT/CN2020/139675 CN2020139675W WO2022134092A1 WO 2022134092 A1 WO2022134092 A1 WO 2022134092A1 CN 2020139675 W CN2020139675 W CN 2020139675W WO 2022134092 A1 WO2022134092 A1 WO 2022134092A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
substrate
groove body
opening
away
Prior art date
Application number
PCT/CN2020/139675
Other languages
English (en)
French (fr)
Inventor
贾立
高涛
吕祖彬
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/630,275 priority Critical patent/US20220399524A1/en
Priority to PCT/CN2020/139675 priority patent/WO2022134092A1/zh
Priority to CN202080003691.4A priority patent/CN115280506A/zh
Priority to CN202111009749.9A priority patent/CN113725232A/zh
Publication of WO2022134092A1 publication Critical patent/WO2022134092A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display device, a display panel, and a manufacturing method of the display panel.
  • the camera device can be arranged below the screen instead of inside the frame.
  • a hole can be opened in the screen so that the camera device can capture images.
  • abnormal patterns are likely to appear around the opening area, which affects the display effect.
  • An object of the present disclosure is to provide a display device, a display panel, and a manufacturing method of the display panel.
  • a display panel comprising:
  • a driving layer which is arranged on one side of the substrate and has an opening, a pixel area located outside the opening, and a transition area separated between the opening and the pixel area; the driving layer is away from the
  • the surface of the substrate is provided with an isolation groove, the isolation groove is located in the transition region and at least partially surrounds the opening; the isolation groove includes a first groove body and a second groove body which are sequentially communicated towards the substrate , the orthographic projection of one side wall of the second groove body on the substrate is located outside the orthographic projection of the first groove body on the substrate, and the other side wall of the second groove body is in the The orthographic projection of the substrate is located between the two side walls of the first groove body and the orthographic projection of the substrate;
  • the light-emitting device layer is disposed on the surface of the driving layer away from the substrate, and includes a light-emitting functional layer extending to the transition region, and the light-emitting functional layer is disconnected in the second groove body.
  • the driving layer includes:
  • a pixel circuit layer located on one side of the substrate
  • a conductive layer disposed on the surface of the first flat layer away from the substrate;
  • the second groove body is provided on the second flat layer
  • a separation layer arranged on the surface of the second flat layer away from the substrate and located in the transition region; the material of the separation layer is different from that of the second flat layer, and the first groove body is arranged on the Separator layer.
  • the first groove body includes opposite first and second side walls, and the second groove body includes opposite third and fourth side walls;
  • the first side wall is located on the side of the second side wall away from the opening, and the third side wall is located at the side of the fourth side wall away from the opening;
  • the first sidewall is located on a side of the third sidewall away from the fourth sidewall, and the second sidewall is located between the third sidewall and the fourth sidewall.
  • the distance between the first sidewall and the third sidewall is 0.5 ⁇ m-1 ⁇ m.
  • the display panel further includes:
  • first barrier dam located in the transition region and surrounding the opening, the first barrier dam protrudes from the surface of the driving layer away from the substrate; the light-emitting functional layer covers the first barrier dam;
  • an encapsulation layer covering the light-emitting device layer and the first barrier dam, the encapsulation layer including an organic layer, the organic layer being defined by the first barrier dam on the part of the first barrier dam away from the opening side.
  • the light emitting device layer further includes:
  • the light-emitting functional layer is disposed on the surface of the first electrode layer away from the substrate;
  • a second electrode layer covering the light-emitting functional layer and at least partially located in the pixel region;
  • the encapsulation layer also includes:
  • the organic layer is provided on the surface of the first inorganic layer away from the substrate;
  • the second inorganic layer covers the organic layer and the first inorganic layer.
  • the display panel further includes:
  • a second barrier dam is provided in the transition area and is located on the side of the first barrier dam close to the opening; the surface of the second barrier dam facing away from the substrate is located on the surface facing away from the first barrier dam a side of the surface of the substrate facing away from the substrate;
  • the light-emitting functional layer covers the second barrier dam.
  • the number of the isolation grooves is multiple, and the first blocking dam and the second blocking dam are located between two adjacent isolation grooves.
  • the material of the separation layer is an inorganic material; the material of the second flat layer is an organic material.
  • an orthographic projection of the first groove body and the second groove body on the substrate intersects, and an area of the intersecting region is smaller than that of the first groove body on the substrate. The area of the orthographic projection of the substrate.
  • the center of the orthographic projection of the first groove body and the second groove body on the substrate does not coincide.
  • the overlapping area of the spacer layer and the orthographic projection of the second flat layer on the substrate is smaller than the orthographic projection of the second flat layer on the substrate area.
  • the depth of the first groove body is smaller than the depth of the second groove body.
  • the driving layer includes a plurality of film layers stacked in a direction away from the substrate, and at least two adjacent film layers of different materials among the plurality of film layers, so The first groove body and the second groove body are located in two adjacent film layers with different materials.
  • the driving layer has an opening, a pixel area located outside the opening, and a transition area separated between the opening and the pixel area;
  • An isolation trench is formed on a surface of the driving layer facing away from the substrate, the isolation trench is located in the transition region and at least partially surrounds the opening; the isolation trench is located in the transition region and at least partially surrounds the opening a hole; the isolation groove includes a first groove body and a second groove body that are communicated with the substrate in sequence, and a side wall of the second groove body is located in the first groove body in the orthographic projection of the substrate In addition to the orthographic projection of the substrate, the orthographic projection of the other side wall of the second groove body on the substrate is located between the orthographic projections of the two side walls of the first groove body on the substrate .
  • the driving layer includes:
  • a pixel circuit layer located on one side of the substrate
  • a conductive layer disposed on the surface of the first flat layer away from the substrate;
  • An isolation trench is formed on the surface of the driving layer away from the substrate; including:
  • a separation material layer is formed on the surface of the second flat layer facing away from the substrate; the material of the separation material layer is different from that of the second flat layer;
  • the separation layer is located in the transition region and has a first groove body exposing the second flat layer;
  • the first groove body includes a first side a wall and a second side wall;
  • the removal area exposes the second flat layer, and the removal area is in the second flat layer
  • the orthographic projection on the layer is located in the first groove body; the sidewall of the removal area away from the opening is located on the side of the first sidewall close to the opening, and the removal area is close to the opening
  • the orthographic projection of the side wall and the second side wall on the second flat layer coincides;
  • the second flat layer in the removal area is etched by a dry etching process to obtain a second groove body;
  • the second groove body includes opposite third sidewalls and fourth sidewalls;
  • the first groove body The orthographic projection of the sidewall on the substrate is located outside the orthographic projection of the second groove body on the substrate, and the orthographic projection of the second sidewall on the substrate is located between the third sidewall and the substrate.
  • the fourth sidewall is between orthographic projections of the substrate;
  • the photoresist layer is removed.
  • the thickness of the photoresist layer is 3.0 ⁇ m.
  • the material of the separation layer is an inorganic material; the material of the second flat layer is an organic material.
  • a display device comprising:
  • an imaging device arranged on the side of the substrate away from the driving layer, the orthographic projection of the imaging device on the driving layer at least partially coincides with the opening, and the imaging device is used to transmit through the Take an image of the opening.
  • FIG. 1 is a partial schematic diagram of a display panel in the related art.
  • FIG. 2 is a top view of an embodiment of a display panel of the present disclosure.
  • FIG. 3 is an A-A cross-sectional view of the display panel in FIG. 1 .
  • FIG. 4 is a schematic diagram of the distribution of isolation grooves in an embodiment of the display panel of the present disclosure.
  • FIG. 5 is a partial electron microscope view of an embodiment of a display panel of the present disclosure.
  • FIG. 6 is a flowchart of an embodiment of the disclosed manufacturing method.
  • FIG. 7 is a flowchart of step S120 in an embodiment of the disclosed manufacturing method.
  • FIG. 8 is a schematic partial structure diagram of step S1210 in an embodiment of the disclosed manufacturing method.
  • FIG. 9 is a schematic partial structural diagram of step S1220 in an embodiment of the disclosed manufacturing method.
  • FIG. 10 is a schematic partial structural diagram of step S1230 in an embodiment of the disclosed manufacturing method.
  • FIG. 11 is a schematic partial structural diagram of step S1240 in an embodiment of the disclosed manufacturing method.
  • FIG. 12 is a schematic partial structural diagram of step S1250 in an embodiment of the disclosed manufacturing method.
  • FIG. 13 is a schematic partial structural diagram of step S1260 in an embodiment of the disclosed manufacturing method.
  • FIG. 14 is a schematic diagram of an embodiment of the disclosed display device.
  • 1 1a, substrate; 2a, driving layer; 3a, light-emitting functional layer; 10a, opening; 20a, isolation trench; 30a, transition region; 40a, pixel region; 4a, separation layer.
  • Example embodiments will now be described more fully with reference to the accompanying drawings.
  • Example embodiments can be embodied in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art.
  • the same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.
  • the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.
  • a display panel includes a substrate 1a, a driving layer 2a and a light-emitting device layer, the driving layer 2a is provided on one side of the substrate 1a, and the light-emitting device layer is provided on a side of the driving layer 2a away from the substrate 1a. side for displaying images.
  • the driving layer 2a has a pixel circuit, and the light-emitting device layer includes a plurality of light-emitting devices, and the light-emitting device may be an OLED (Organic Light-Emitting Diode) light-emitting device, which may include stacking sequentially in a direction away from the driving layer 2a.
  • OLED Organic Light-Emitting Diode
  • electrical signals can be input to the first electrode and the second electrode through the driving circuits (such as light-emitting control circuits and gate driving circuits) and pixel driving circuits around the driving layer 2a to drive the light-emitting functional layer 3a to emit light, thereby displaying images.
  • driving circuits such as light-emitting control circuits and gate driving circuits
  • pixel driving circuits around the driving layer 2a to drive the light-emitting functional layer 3a to emit light, thereby displaying images.
  • the display panel can be provided with a light-transmitting opening 10a, and a camera or other camera device can be arranged on the side of the substrate 1a away from the driving layer 2a, and images can be captured through the opening 10a.
  • the light-emitting functional layer 3a in the light-emitting device layer is usually an organic material, and moisture and oxygen from the outside easily enter the display panel through the opening 10a through the light-emitting functional layer 3a, which will corrode the light-emitting device, shorten the life of the light-emitting device, and affect the display. Effect.
  • an isolation groove 20a surrounding the opening 10a can be formed in the display panel, so that the light emitting functional layer 3a is disconnected in the isolation groove 20a, thereby cutting off the intrusion path of water vapor and oxygen.
  • the driving layer 2a has a transition area 30a surrounding the opening 10a and a pixel area 40a surrounding the transition area 30a.
  • the light-emitting device is located within the range of the pixel area 40a for displaying images.
  • the light-emitting functional layer 3a can be formed as a whole layer , thereby extending to the transition region 30a.
  • An isolation trench 20a can be opened on the driving layer 2a of the transition region 30a, and a isolation layer 4a is formed in the transition region 30a, the isolation layer 4a covers the isolation trench 20a, and the isolation layer 4a extends from both sides of the isolation trench 20a into the isolation trench 20a, However, the isolation groove 20a is not completely shielded.
  • the portion of the spacer layer 4a extending into the isolation trench 20a may form a "cantilever" structure.
  • the spacer layer 4a extending into the isolation trench 20a can be close to the surface of the substrate 1a and at least part of the region of the sidewall of the isolation trench 20a.
  • the light-emitting functional layer 3a cannot be formed, so that the light-emitting functional layer 3a can be disconnected within the isolation trench 20a.
  • the portion of the separation layer 4a extending into the isolation trench 20a and close to the surface of the substrate 1a cannot form the light-emitting functional layer 3a.
  • FIG. 1 only illustrates the principle of separating the light-emitting functional layer 3a by the separation layer 4a and the separation groove 20a in the related art, thus omitting or simplifying part of the structure, and does not constitute a limitation on the actual structure of the display panel.
  • Embodiments of the present disclosure provide a display panel, which may be an OLED display panel. As shown in FIG. 2 to FIG. 5 and FIG. 13 , the display panel may include a substrate 1 , a driving layer 2 and a light-emitting device layer 3 , wherein :
  • the driving layer 2 is disposed on one side of the substrate 1, and has an opening 001, a pixel area 002 located outside the opening 001, and a transition area 003 separated between the opening 001 and the pixel area 002; the driving layer 2 is away from the substrate 1
  • An isolation trench 20 recessed toward the substrate 1 is provided on the surface of the substrate 1 , and the isolation trench 20 is located in the transition region 003 and at least partially surrounds the opening 001 .
  • the isolation trench 20 includes a first trench body 201 and a second trench body 202 that are connected in turn toward the substrate 1 along the recessed direction. Besides the orthographic projection of the bottom 1 , the orthographic projection of the other side wall of the second groove body 202 on the substrate 1 is located between the orthographic projections of the two side walls of the second groove body 202 on the substrate 1 .
  • the light emitting device layer 3 is disposed on the surface of the driving layer 2 away from the substrate 1 , and includes a light emitting functional layer 32 extending to the transition region 003 , and the light emitting functional layer 32 is disconnected in the second groove body 202 .
  • first groove body 201 and the second groove body 202 are connected, they are arranged in a staggered manner, which can facilitate exhaust gas while ensuring that the erosion path of water vapor and oxygen is cut off, and avoid the occurrence of "wrapped". gas" phenomenon.
  • the orthographic projection of one side wall of the second groove body 202 on the substrate 1 is located outside the orthographic projection of the two side walls of the first groove body 201 on the substrate 1, the other side wall of the second groove body 202
  • the orthographic projection of the substrate 1 is located between the orthographic projections of the two side walls of the second groove body 202 and the orthographic projection of the substrate 1 , in the direction perpendicular to the substrate 1 , one of the two side walls of the second groove body 202 is shielded , and the other is exposed by the first groove body 201 .
  • the light-emitting functional layer 32 cannot be formed at least on the sidewalls shielded by the first groove body 201 and the region where the first groove body 201 extends to the two side walls of the second groove body 202 is close to the surface of the substrate 1, while in the first groove body 201.
  • the two grooves 202 are disconnected to cut off the erosion path of water vapor and oxygen.
  • one side wall of the second groove body 202 is not shielded, which is convenient for expanding the exhaust channel, smoothly exhausting the gas, preventing the phenomenon of "encapsulation", thereby preventing the photoresist or other film layers in the subsequent process from cracking, and finally Avoid abnormal patterns, which is beneficial to improve the display effect.
  • the substrate 1 is a flat plate structure, which can be made of a hard material such as glass, or a flexible material such as PI (polyimide).
  • the substrate 1 may have a single-layer or multi-layer structure, which is not particularly limited here.
  • the driving layer 2 is provided on one side of the substrate 1 for driving the light-emitting device layer 3 to emit light. Meanwhile, the driving layer 2 has an opening 001 , a pixel region 002 and a transition region 003 . in:
  • the opening 001 is used to transmit light when the camera device captures an image.
  • the opening 001 may penetrate through the driving layer 2 to expose the substrate 1 , or may further penetrate the substrate 1 .
  • the shape of the opening 001 may be a circle, a semi-circle, a waist circle, etc., and the shape thereof is not limited herein.
  • the pixel area 002 is used to emit light to display an image.
  • the pixel area 002 may surround the opening 001, that is, images can be displayed around the opening 001; or, the boundary of the opening 001 may partially overlap with the boundary of the driving layer 2, correspondingly, the pixel area 002 does not completely surround the opening. other than 001.
  • only the pixel region 002 is taken as an example to surround the outside of the opening 001 for description.
  • the transition area 003 is separated between the opening 001 and the pixel area 002 .
  • the pixel area 002 surrounds the opening 001
  • the transition area 003 is an annular area surrounding the opening 001 .
  • the driving layer 2 may include a pixel circuit layer 21 , a first flat layer 22 , a conductive layer 23 and a second flat layer 24 , wherein:
  • the pixel circuit layer 21 can be disposed on one side of the substrate 1 and at least partially located in the pixel region 002 .
  • the pixel circuit layer 21 can be used to drive the light-emitting device layer 3 to emit light.
  • the pixel circuit layer 21 can include a plurality of pixel circuits, and the light-emitting device layer 3 can include a plurality of light-emitting devices. The device emits light.
  • the pixel circuit used to drive the light-emitting device layer 3 to emit light can be 7T1C, 7T2C, 6T1C, 6T2C or other types of pixel circuits, as long as it can drive the light-emitting device layer 3 to emit light, and its structure is not limited here.
  • nTmC indicates that a pixel circuit includes n transistors (represented by the letter “T") and m capacitors (represented by the letter "C").
  • the pixel circuit includes at least a driving transistor.
  • the pixel circuit layer 21 may include an active layer 211 , a first gate insulating layer 212 , and a gate layer that are sequentially stacked on the substrate 1 . 213 , a second gate insulating layer 214 , an interlayer dielectric layer 215 , a source-drain layer 216 and a passivation layer 217 , wherein the source-drain layer 216 includes a source electrode 2161 and a drain electrode 2162 connected to the active layer 211 .
  • the passivation layer 217 may cover the source and drain layers 216 and the interlayer dielectric layer 215 .
  • the first flat layer 22 covers the pixel circuit layer 21 and the pixel circuit layer 21, that is, covers the source and drain layers 216 and the passivation layer 217 not covered by the source and drain layers 216.
  • the conductive layer 23 is disposed on the surface of the first flat layer 22 away from the substrate 1 , and is connected to the source and drain layers 216 , and its material may be the same as that of the source and drain layers 216 .
  • the pattern of the conductive layer 23 is not specially determined here.
  • the second flat layer 24 covers the conductive layer 23 and the first flat layer 22 .
  • Both the second flat layer 24 and the first flat layer 22 can be made of transparent organic materials, and the materials of the two can be the same.
  • the above-mentioned active layer 211, gate layer 213 and source-drain layer 216 may be located in the pixel region 002, while the first gate insulating layer 212, the second gate insulating layer 214, the interlayer dielectric layer 215, the passivation layer 217, the first gate insulating layer 214, the A flat layer 22 and a second flat layer 24 may be located in the pixel region 002 and the transition region 003, and may be a whole-layer structure.
  • the first gate insulating layer 212, the second gate insulating layer 214, the interlayer dielectric layer 215, the passivation layer 217, the first flattening layer 22 and the second flattening layer 24 are away from the substrate
  • the directions of 1 are sequentially stacked on the substrate 1 .
  • an isolation trench 20 recessed toward the substrate 1 may be provided on the surface of the driving layer 2 away from the substrate 1 .
  • the isolation groove 20 is located in the transition area 003 and at least partially surrounds the opening 001 , for example, the isolation groove 20 may be an annular groove surrounding the opening 001 .
  • the isolation trench 20 includes a first trench body 201 and a second trench body 202 which are sequentially communicated with the substrate 1 along the recessed direction. The first trench body 201 and the second trench body 202 are staggered.
  • One side wall is located outside the second groove body 202 , and the other side wall of the first groove body 201 is located between the two side walls of the second groove body 202 .
  • the orthographic projection is located outside the orthographic projection of the first groove body 201 on the substrate 1 , and the orthographic projection of the other side wall of the second groove body 202 on the substrate 1 is located on the normal projection of the two side walls of the first groove body 201 on the substrate 1 .
  • projections that is to say, one side wall of the second groove body 202 is exposed by the first groove body 201 to facilitate gas discharge, and the other side wall of the second groove body 202 is not exposed, which can avoid the formation of a light-emitting functional layer 32, thereby cutting off the path of water vapor and oxygen intrusion.
  • the orthographic projection of the first groove body 201 and the second groove body 202 on the substrate 1 intersects, and the area of the intersecting area is smaller than the area of the orthographic projection of the first groove body 201 on the substrate 1, that is, the first groove
  • the body 201 and the second groove body 202 are incomplete in the direction perpendicular to the substrate 1 .
  • the centers of the orthographic projection of the first groove body 201 and the second groove body 202 on the substrate 1 do not overlap, so that the first groove body 201 and the second groove body 202 are staggered.
  • the driving layer 2 may include a plurality of film layers stacked in a direction away from the substrate 1, and at least two adjacent film layers in the plurality of film layers have different materials.
  • the two groove bodies 202 are located in two adjacent film layers with different materials, so as to form the first groove body 201 and the second groove body 202 staggered above, for example:
  • the driving layer 2 includes the above-mentioned pixel circuit layer 21 , the first flat layer 22 , the conductive layer 23 and the second flat layer 24 .
  • the second groove body 202 is provided in the area of the layer 24 located in the transition region 003, and a separation layer 25 is arranged on the surface of the second flat layer 24 away from the substrate 1.
  • the orthographic projection of the separation layer 25 and the second flat layer 24 on the substrate 1 The overlapping area of the second planar layer 24 is smaller than the orthographic projection area of the second planar layer 24 on the substrate 1 , that is, the spacer layer 25 only covers a partial area of the second planar layer 24 .
  • a first groove body 201 staggered and communicated with the second groove body 202 is opened on the separation layer 25 , thereby obtaining the isolation groove 20 .
  • the spacer layer 25 is disposed on the surface of the second planar layer 24 facing away from the substrate 1 and located in the transition region 003 .
  • the first groove body 201 is an annular groove disposed in the spacer layer 25 , which penetrates the spacer layer 25 in a direction perpendicular to the substrate 1 , and is disposed around the opening 001 .
  • the first groove body 201 includes opposite first side walls 2011 and second side walls 2012 .
  • the second groove body 202 is disposed on the second flat layer 24 and is recessed toward the substrate 1 .
  • the depth of the second groove body 202 can be smaller than the thickness of the second flat layer 24 , that is, it does not penetrate through the second flat layer 24 . Of course, it can also be The depth is equal to or greater than the depth of the second flat layer 24 , so as to penetrate through the second flat layer 24 or be recessed into the first flat layer 22 , and the depth of the second groove body 202 is not limited herein.
  • the second groove body 202 includes opposite third side walls 2021 and fourth side walls 2022 .
  • the first side wall 2011 is located outside the second groove body 202, and the second side wall 2012 is located between the third side wall 2021 and the fourth side wall 2022, so that the first groove body 201 and the second groove body 202 are staggered, so that the first groove body 201 and the second groove body 202 are staggered. Only one side wall of the two groove bodies 202 is exposed by the first groove body 201 , and the other side wall is not exposed by the first groove body 201 .
  • the first sidewall 2011 may be located on the side of the second sidewall 2012 away from the hole 001
  • the third sidewall 2021 may be located on a side of the fourth sidewall 2022 away from the hole 001 .
  • the first side wall 2011 is located on the side of the third side wall 2021 away from the fourth side wall 2022 .
  • the area of the second flat layer 24 between the first sidewall 2011 and the third sidewall 2021 is annular, and is exposed by the first groove body 201 .
  • the width of this area is the difference between the first sidewall 2011 and the third sidewall 2021
  • the spacing L can be 0.5 ⁇ m-1 ⁇ m, for example, L can be 0.5 ⁇ m, 0.7 ⁇ m or 1 ⁇ m, etc. Of course, it can also be smaller than 0.5 ⁇ m or larger than 1 ⁇ m.
  • the depth H of the isolation groove 20 in the direction perpendicular to the substrate 1 may be 0.3 ⁇ m-0.5 ⁇ m, and the depth H is the sum of the depths of the first groove body 201 and the second groove body 202 , that is, the separation layer 25 is away from the liner The distance between the surface of the bottom 1 and the surface of the first planar layer 22 facing away from the substrate 1 .
  • the width W of the region of the spacer layer 25 in the second groove body 202 (eg, the distance between the second sidewall 2012 and the fourth sidewall 2022 in FIG. 13 ) may be 1.5 ⁇ m-2 ⁇ m.
  • the depth of the first groove body 201 is smaller than the depth of the second groove body 202 .
  • the relative positions of the first side wall 2011, the second side wall 2012, the third side wall 2021 and the fourth side wall 2022 and the opening 001 can be changed, as long as it can be ensured that only one side wall of the second groove body 202 is covered by the A groove body 201 may be exposed.
  • the material of the isolation layer 25 may be one or more inorganic materials such as silicon nitride, and the material of the isolation layer 25 may be the same as that of the passivation layer 217 .
  • the material of the second flat layer 24 may be one or more organic materials. Therefore, the first groove body 201 and the second groove body 202 can be formed by using the etching selectivity ratio of dry etching to different materials. For details, please refer to the embodiment of the manufacturing method of the display panel below, which will not be described in detail here.
  • the second flat layer 24 and the separation layer 25 are the above-mentioned two adjacent film layers with different materials.
  • the light-emitting device layer 3 may be disposed on the surface of the driving layer 2 away from the substrate 1, and may include a plurality of light-emitting devices located in the pixel region 002, and each light-emitting device may be connected to a driving transistor of a pixel circuit, in order to receive the drive signal.
  • the light-emitting device can be an OLED light-emitting device, which can include a light-emitting functional layer and a cathode and an anode on both sides of the light-emitting functional layer.
  • a driving signal By applying a driving signal to the cathode and the anode, the organic light-emitting layer can emit light.
  • the light-emitting principle of the OLED light-emitting device is described here. No special restrictions are made.
  • the driving signal can be applied to the anode through the pixel circuit. For example:
  • the light-emitting device layer 3 may include a first electrode layer 31 , a light-emitting functional layer 32 and a second electrode layer 33 , wherein:
  • the first electrode layer 31 is disposed on the surface of the driving layer 2 away from the substrate 1, and is located in the pixel region 002.
  • the first electrode layer 31 may include a plurality of first electrodes, each of which may serve as an anode of a light-emitting device, and It is connected to the conductive layer 23 , and then connected to the source-drain layer 216 through the conductive layer 23 .
  • the light-emitting functional layer 32 can be disposed on the surface of the first electrode layer 31 away from the substrate 1, and is a continuous film layer extending to the transition region 003, so as to be formed as a whole layer, avoiding the use of a fine mask.
  • the light-emitting functional layer 32 covers the area where the isolation trench 20 is located, and extends into the isolation trench 20 at the isolation trench 20, but at least on the sidewalls of the second trench body 202 that are not exposed by the first trench body 201 (for example, the fourth side The area of the wall 2022) and the spacer layer 25 located in the second groove body 202 is disconnected near the surface of the substrate 1, thereby cutting off the path of water vapor and oxygen intrusion.
  • the light-emitting functional layer 32 cannot be formed even when the spacer layer 25 extends to the region of the second groove body 202 close to the surface of the substrate 1 .
  • the light-emitting functional layer 32 is a multilayer structure of organic light-emitting materials.
  • the light-emitting functional layer 32 may at least include a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and a hole injection layer sequentially stacked on the first electrode layer 31. layer and electron injection layer.
  • a hole injection layer In each film layer of the light-emitting functional layer 32 , only a part of the film layers may extend to the transition region 003 , or all of the film layers may extend to the transition region 003 .
  • the second electrode layer 33 covers the light-emitting functional layer 32 , which can be used as a cathode of the light-emitting device and is at least partially located in the pixel region 002 .
  • the second electrode layer 33 is made of metal material and is located in the pixel region 002 and the transition region 003 , but since its manufacturing process is different from that of the light-emitting functional layer 32 , the second electrode layer 33 is not limited to be disconnected in the isolation trench 20 .
  • the second electrode layer 33 may be a multi-layer structure, for example, it may include a first metal layer, a second metal layer and a third metal layer sequentially stacked in a direction away from the substrate 1 , wherein the first metal layer and the third metal layer
  • the material of the metal layer may be aluminum, and the material of the second metal layer may be silver.
  • the second electrode layer 33 can also adopt other multi-layer structures or single-layer structures, and the materials and structures are not particularly limited.
  • Each light-emitting device may share the same light-emitting functional layer 32 , or share a film layer provided in the entire light-emitting functional layer 32 . Meanwhile, each light emitting device shares the same second electrode layer 33 .
  • the light-emitting device layer 3 may further include a pixel definition layer 34, which may be provided on the surface of the second flat layer 24 away from the substrate 1, and the pixel definition layer 34 may be provided There are a plurality of openings, each opening exposes a first electrode, and the light-emitting functional layer 32 and the second electrode layer 33 within the opening range and the first electrode exposed by the opening can be used as a light-emitting device.
  • the display panel of the present disclosure may further include a first barrier dam 4 and an encapsulation layer 5, wherein:
  • the first barrier dam 4 is disposed in the transition region 003 and surrounds the opening 001 , and the first barrier dam 4 protrudes from the surface of the driving layer 2 away from the substrate 1 .
  • the transition region 003 can be provided with an annular groove 004 exposing the passivation layer 217
  • the first barrier dam 4 is an annular rib disposed around the opening 001 , which can be disposed on the surface of the passivation layer 217 away from the substrate 1 . , and is located in the annular groove 004 .
  • the first barrier dam 4 can be formed in the same manner as the first flat layer 22 or the second flat layer 24 by a process such as a grayscale mask; or, the first barrier dam 4 can also be a multi-layer structure, which is not correct here. Its specific structure is specially limited. Of course, the first blocking dam 4 may also be disposed on the surface of the first flat layer 22 or the second flat layer 24 facing away from the substrate 1 .
  • the encapsulation layer 5 covers the light emitting device layer 3 and the first barrier dam 4, and the encapsulation layer 5 includes a first inorganic layer 51, an organic layer 52 and a second inorganic layer 53, wherein:
  • the first inorganic layer 51 covers the light emitting device layer 3 , the first barrier dam 4 and the isolation trench 20 , and the first inorganic layer 51 matches the protrusion at the first barrier dam 4 , matches the depression at the isolation trench 20 , and can be in the isolation trench. 20 continuous extension without breaking.
  • the organic layer 52 is disposed on the surface of the first inorganic layer 51 facing away from the substrate 1 , and is defined on the side of the first barrier dam 4 facing away from the hole 001 .
  • the second inorganic layer 53 covers the organic layer 52 and the first inorganic layer 51 .
  • the display panel may further include a second barrier dam 6 , which may be disposed in the transition area 003 and located on the side of the first barrier dam 4 close to the opening 001 , and the second barrier dam 6
  • the surface of the dam 6 facing away from the substrate 1 is located on the side of the surface of the first barrier dam 4 facing away from the substrate 1 facing away from the substrate 1, that is, the top of the second barrier dam 6 is higher than the top of the first barrier dam 4, through the second barrier
  • the dam 6 can prevent the organic layer 52 from extending toward the opening 001 .
  • the light emitting functional layer 32 covers the second barrier dam 6
  • the second electrode layer 33 also extends to a region of the light emitting functional layer 32 corresponding to the second barrier dam 6 .
  • the number of isolation grooves 20 may be multiple, and the first barrier dam 4 and the second barrier dam 6 are located in adjacent two isolation trenches between slots 20.
  • the number of isolation grooves 20 is four, and they are arranged concentrically around the opening 001 , and the first blocking dam 4 and the second blocking dam 6 are located between the two isolation grooves 20 in the middle.
  • the organic layer 52 can be filled in the isolation trench 20 on the side of the first barrier dam 4 facing away from the hole 001 .
  • Embodiments of the present disclosure further provide a method for manufacturing a display panel.
  • the display panel may be the display panel in any of the above-mentioned embodiments, and its structure will not be described in detail here.
  • the manufacturing method may include steps S110- Step S120, wherein:
  • Step S110 forming a driving layer on one side of the substrate, the driving layer having an opening, a pixel area located outside the opening, and a transition area separated from the opening and the pixel area.
  • Step S120 forming an isolation trench on the surface of the driving layer away from the substrate, the isolation trench is located in the transition region and at least partially surrounds the opening; the isolation trench includes sequentially connected to the substrate.
  • a first groove body and a second groove body, the orthographic projection of one side wall of the second groove body on the substrate is located outside the orthographic projection of the first groove body on the substrate, and the second groove body
  • the orthographic projection of the other sidewall of the body on the substrate is located between the orthographic projections of the two sidewalls of the first groove body on the substrate.
  • the driving layer 2 includes a pixel circuit layer 21 , a first flat layer 22 , a conductive layer 23 and a second flat layer 24 .
  • a first flat layer 22 a first flat layer 22 , a conductive layer 23 and a second flat layer 24 .
  • the driving layer 2 includes a pixel circuit layer 21 , a first flat layer 22 , a conductive layer 23 and a second flat layer 24 .
  • an isolation trench recessed toward the substrate is formed on the surface of the driving layer away from the substrate; that is, step S120 may include steps S1210 to S1260, wherein:
  • Step S1210 forming a separation material layer on the surface of the second flat layer away from the substrate; the material of the separation material layer is different from that of the second flat layer.
  • the spacer material layer 7 may completely cover the surface of the second planar layer 24 facing away from the substrate 1 .
  • Step S1220 performing a photolithography process on the separation material layer to obtain a separation layer
  • the separation layer is located in the transition region and has a first groove body exposing the second flat layer; the first groove body includes Opposing first and second side walls.
  • the photolithography process may include processes such as coating photoresist, exposing, developing and etching, so that the separation material layer 7 can be patterned, the separation material layer 7 other than the transition region 003 can be removed, and the separation material layer 7 can be removed in the transition region.
  • a first groove body 201 exposing the second flat layer 24 is formed in the spacer material layer 7 in 003 , thereby obtaining the spacer layer 25 .
  • the specific structure of the separation layer 25 has been described in detail in the above embodiments of the display panel, and will not be described in detail here.
  • Step S1230 forming a photoresist layer covering the separation layer and filling the first groove body.
  • the photoresist layer 8 may cover the spacer layer 25 and the regions of the second planarization layer 24 that are not covered by the spacer layer 25 .
  • Step S1240 exposing and developing the photoresist layer to form a removal area around the opening; the orthographic projection of the removal area on the second flat layer is located in the first groove body, and the The sidewall of the removal area facing away from the opening is located on the side of the first sidewall close to the opening, and the sidewall of the removal area close to the opening and the second sidewall are on the side of the first sidewall.
  • the orthographic projections of the second flat layer coincide.
  • the annular groove, the orthographic projection of the removal area 81 on the second flat layer 24 is located in the first groove body 201, and the side wall of the removal area 81 close to the opening 001 is perpendicular to the second side wall 2012 of the first groove body 201.
  • the substrate 1 is aligned in the direction (that is, the orthographic projections of the two on the second flat layer 24 are coincident), and there is a certain distance between the side wall of the removal area 81 facing away from the hole 001 and the first side wall 2011 of the first groove body 201 . distance, so that the first sidewall 2011 is covered by the photoresist layer 8 .
  • Step S1250 etching the second flat layer in the removal area by a dry etching process to obtain a second groove body;
  • the second groove body includes opposite third sidewalls and fourth sidewalls;
  • the orthographic projection of the first sidewall on the substrate is located outside the orthographic projection of the second groove body on the substrate, and the orthographic projection of the second sidewall on the substrate is located on the third side
  • the wall and the fourth side wall are between orthographic projections of the substrate.
  • the third side wall 2021 of the second groove body 202 is exposed by the first groove body 201 , while the fourth side wall 2022 is not exposed by the first groove body 201 .
  • the second groove body 202 is connected to the first groove body 201 .
  • the body 201 communicates into an isolation trench 20 in a direction perpendicular to the substrate 1 .
  • the isolation groove 20 For the detailed structure of the isolation groove 20, reference may be made to the embodiments of the display panel, which will not be described in detail here.
  • Oxygen can be used to dry-etch the second flat layer 24 exposed in the removal region 81. If the photoresist layer 8 and the second flat layer 24 are made of the same material, the dry etching has no selectivity for the two. Therefore, In order to avoid that the thickness of the photoresist layer 8 is too thin and it is difficult to protect the separation layer 25 and the second flat layer 24, the thickness of the etching photoresist layer 8 is 2.5 ⁇ m-3.5 ⁇ m, for example, the thickness may be 3.0 ⁇ m.
  • Step S1260 removing the photoresist layer.
  • ashing or other processes can be used to drive the photoresist layer 8 to expose the spacer layer 25 and the second flat layer 24 , and the process for removing the photoresist layer 8 is not limited herein.
  • FIGS. 7 to 12 only schematically illustrate the formation process of the isolation trench 20 , and thus some structures are omitted or simplified.
  • the various steps of the manufacturing methods of the present disclosure are depicted in the drawings in a particular order, this does not require or imply that the steps must be performed in that particular order, or that all illustrated steps must be performed to achieve the desired the result of. Additionally or alternatively, certain steps may be omitted, multiple steps may be combined into one step for execution, and/or one step may be decomposed into multiple steps for execution, and the like.
  • Embodiments of the present disclosure further provide a display device.
  • the display device may include a display panel 100 and a camera device 200 , wherein:
  • the display panel 100 may be the display panel of any of the above-mentioned embodiments, and its structure may refer to the above-mentioned embodiments of the display panel, which will not be described in detail here.
  • the camera device 200 is disposed on the side of the substrate 1 away from the driving layer 2 .
  • the orthographic projection of the camera device 200 on the driving layer 2 at least partially coincides with the opening 001 , and the camera 200 is used to capture images through the opening 001 .
  • the camera device 200 may include a lens, a photoelectric sensor, etc., and the specific structure of the camera device 200 is not particularly limited here, as long as it can capture images.
  • the display device of the present disclosure may be an electronic device with display and photographing functions, such as a mobile phone, a tablet computer, a TV, etc., which will not be listed one by one here.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示装置、显示面板及显示面板的制造方法，涉及显示技术领域。显示面板包括衬底（1）、驱动层（2）和发光器件层（3），驱动层（2）设于衬底（1）一侧，且具有开孔（001）、位于开孔（001）外的像素区（002）以及分隔于开孔（001）和像素区（002）之间的过渡区（003）；驱动层（2）背离衬底（1）的表面设有隔离槽（20），隔离槽（20）位于过渡区（003）且至少部分围绕开孔（001）；隔离槽（20）包括朝衬底（1）依次连通的第一槽体（201）和第二槽体（202），第二槽体（202）的一侧壁在衬底（1）的正投影位于第一槽体（201）在衬底（1）的正投影以外，第二槽体（202）的另一侧壁在衬底（1）的正投影位于第一槽体（201）的两侧壁在衬底（1）的正投影之间。发光器件层（3）设于驱动层（2）背离衬底（1）的表面，且包括延伸至过渡区（003）的发光功能层（32），发光功能层（32）在第二槽体（202）内断开。

Description

显示装置、显示面板及其制造方法 技术领域
本公开涉及显示技术领域，具体而言，涉及一种显示装置、显示面板及显示面板的制造方法。
背景技术
在手机等具有前置拍照功能的显示装置中，为了缩窄边框，提高屏占比，可将摄像装置设置在屏幕下方，而不在边框内。但为了避免屏幕对光线造成遮挡，而影响摄像装置感光，可在屏幕中开孔，以便摄像装置拍摄图像。但是，开孔区域的周围容易出现异常图案，影响显示效果。
需要说明的是，在上述背景技术部分公开的信息仅用于加强对本公开的背景的理解，因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。
公开内容
本公开的目的在于提供一种显示装置、显示面板及显示面板的制造方法。
根据本公开的一个方面，提供一种显示面板，包括：
衬底；
驱动层，设于所述衬底一侧，且具有开孔、位于所述开孔外的像素区以及分隔于所述开孔和所述像素区之间的过渡区；所述驱动层背离所述衬底的表面设有隔离槽，所述隔离槽位于所述过渡区且至少部分围绕所述开孔；所述隔离槽包括朝所述衬底依次连通的第一槽体和第二槽体，所述第二槽体的一侧壁在所述衬底的正投影位于所述第一槽体在所述衬底的正投影以外，所述第二槽体的另一侧壁在所述衬底的正投影位于所述第一槽体的两侧壁在所述衬底的正投影之间；
发光器件层，设于所述驱动层背离所述衬底的表面，且包括延伸至所述过渡区的发光功能层，所述发光功能层在所述第二槽体内断开。
在本公开的一种示例性实施例中，所述驱动层包括：
像素电路层，设于所述衬底一侧；
第一平坦层，覆盖所述像素电路层；
导电层，设于所述第一平坦层背离所述衬底的表面；
第二平坦层，覆盖所述导电层和所述第一平坦层；所述第二槽体设于所述第二平坦层；
分隔层，设于所述第二平坦层背离所述衬底的表面且位于所述过渡区；所述分隔层与所述第二平坦层的材料不同，所述第一槽体设于所述分隔层。
在本公开的一种示例性实施例中，所述第一槽体包括相对的第一侧壁和第二侧壁，所述第二槽体包括相对的第三侧壁和第四侧壁；
所述第一侧壁位于所述第二侧壁背离所述开孔的一侧，所述第三侧壁位于所述第四侧壁背离所述开孔的一侧；
所述第一侧壁位于所述第三侧壁背离所述第四侧壁的一侧，所述第二侧壁位于所述第三侧壁和所述第四侧壁之间。
在本公开的一种示例性实施例中，所述第一侧壁与所述第三侧壁的间距为0.5μm-1μm。
在本公开的一种示例性实施例中，所述显示面板还包括：
第一阻挡坝，设于所述过渡区且围绕所述开孔，所述第一阻挡坝凸出于所述驱动层背离所述衬底的表面；所述发光功能层覆盖所述第一阻挡坝；
封装层，覆盖所述发光器件层和所述第一阻挡坝，所述封装层包括有机层，所述有机层被所述第一阻挡坝限定于所述第一阻挡坝背离所述开孔的一侧。
在本公开的一种示例性实施例中，所述发光器件层还包括：
第一电极层，设于所述驱动层背离所述衬底的表面，且位于所述像素区；所述发光功能层设于所述第一电极层背离所述衬底的表面；
第二电极层，覆盖所述发光功能层，且至少部分位于所述像素区；
所述封装层还包括：
第一无机层，覆盖所述发光器件层、所述第一阻挡坝和所述隔离槽；所述有机层设于所述第一无机层背离所述衬底的表面；
第二无机层，覆盖所述有机层和所述第一无机层。
在本公开的一种示例性实施例中，所述显示面板还包括：
第二阻挡坝，设于所述过渡区，且位于所述第一阻挡坝靠近所述开孔的一侧；所述第二阻挡坝背离所述衬底的表面位于所述第一阻挡坝背离所述衬底的表面背离所述衬底的一侧；
所述发光功能层覆盖所述第二阻挡坝。
在本公开的一种示例性实施例中，所述隔离槽的数量为多个，且所述第一阻挡坝和所述第二阻挡坝位于相邻的两个所述隔离槽之间。
在本公开的一种示例性实施例中，所述分隔层的材料为无机材料；所述第二平坦层的材料为有机材料。
在本公开的一种示例性实施例中，所述第一槽体与所述第二槽体在所述衬底的正投影相交，且相交区域的面积小于所述第一槽体在所述衬底的正投影的面积。
在本公开的一种示例性实施例中，所述第一槽体与所述第二槽体在所述衬底的正投影的中心不重合。
在本公开的一种示例性实施例中，所述分隔层与所述第二平坦层在所述衬底的正投影的交叠面积小于所述第二平坦层在所述衬底的正投影的面积。
在本公开的一种示例性实施例中，所述第一槽体的深度小于所述第二槽体的深度。
在本公开的一种示例性实施例中，所述驱动层包括向背离衬底的方向层叠的多个膜层，多个所述膜层中至少两个相邻的材料不同的膜层，所述第一槽体和所述第二槽***于相邻的两个材料不同的所述膜层中。
在本公开的一种示例性实施例中，包括：
在衬底一侧形成驱动层，所述驱动层具有开孔、位于所述开孔外的像素区以及分隔于所述开孔和所述像素区之间的过渡区；
在所述驱动层背离所述衬底的表面形成隔离槽，所述隔离槽位于所述过渡区且至少部分围绕所述开孔；所述隔离槽位于所述过渡区且至少部分围绕所述开孔；所述隔离槽包括朝所述衬底依次连通的第一槽体和第二槽体，所述第二槽体的一侧壁在所述衬底的正投影位于所述第一槽 体在所述衬底的正投影以外，所述第二槽体的另一侧壁在所述衬底的正投影位于所述第一槽体的两侧壁在所述衬底的正投影之间。
在本公开的一种示例性实施例中，所述驱动层包括：
像素电路层，设于所述衬底一侧；
第一平坦层，覆盖所述像素电路层；
导电层，设于所述第一平坦层背离所述衬底的表面；
第二平坦层，覆盖所述导电层和所述第一平坦层；
在所述驱动层背离所述衬底的表面形成隔离槽；包括：
在所述第二平坦层背离所述衬底的表面形成分隔材料层；所述分隔材料层与所述第二平坦层的材料不同；
对所述分隔材料层进行光刻工艺，得到分隔层；所述分隔层位于所述过渡区，且具有露出所述第二平坦层的第一槽体；所述第一槽体包括第一侧壁和第二侧壁；
形成覆盖所述分隔层并填充所述第一槽体的光刻胶层；
对所述光刻胶层进行曝光并显影，在所述过渡区内形成围绕所述开孔的去除区；所述去除区露出所述第二平坦层，所述去除区在所述第二平坦层上的正投影位于所述第一槽体内；所述去除区背离所述开孔的侧壁位于所述第一侧壁靠近所述开孔的一侧，所述去除区靠近所述开孔的侧壁与所述第二侧壁在所述第二平坦层的正投影重合；
通过干刻工艺对所述去除区内的所述第二平坦层进行刻蚀，得到第二槽体；所述第二槽体包括相对的第三侧壁和第四侧壁；所述第一侧壁在所述衬底的正投影位于所述第二槽体在所述衬底的正投影以外，所述第二侧壁在所述衬底的正投影位于所述第三侧壁和所述第四侧壁在所述衬底的正投影之间；
去除所述光刻胶层。
在本公开的一种示例性实施例中，所述光刻胶层的厚度为3.0μm。
在本公开的一种示例性实施例中，所述分隔层的材料为无机材料；所述第二平坦层的材料为有机材料。
根据本公开的一个方面，提供一种显示装置，包括：
上述任意一项所述的显示面板；
摄像装置，设于所述衬底背离所述驱动层的一侧，所述摄像装置在所述驱动层上的正投影与所述开孔至少部分重合，且所述摄像装置用于透过所述开孔拍摄图像。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本公开。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本公开的实施例，并与说明书一起用于解释本公开的原理。显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为相关技术中显示面板的局部示意图。
图2为本公开显示面板一实施方式的俯视图。
图3为图1中显示面板的A-A截面图。
图4为本公开显示面板一实施方式中隔离槽的分布示意图。
图5为本公开显示面板一实施方式的局部电镜图。
图6为本公开制造方法一实施方式的流程图。
图7为本公开制造方法一实施方式中步骤S120的流程图。
图8为本公开制造方法一实施方式中步骤S1210的局部结构示意图。
图9为本公开制造方法一实施方式中步骤S1220的局部结构示意图。
图10为本公开制造方法一实施方式中步骤S1230的局部结构示意图。
图11为本公开制造方法一实施方式中步骤S1240的局部结构示意图。
图12为本公开制造方法一实施方式中步骤S1250的局部结构示意图。
图13为本公开制造方法一实施方式中步骤S1260的局部结构示意图。
图14为本公开显示装置一实施方式的示意图。
附图标记说明：
图1中：1a、衬底；2a、驱动层；3a、发光功能层；10a、开孔；20a、隔离槽；30a、过渡区；40a、像素区；4a、分隔层。
图2-图12中：1、衬底；2、驱动层；21、像素电路层；211、有源层；212、第一栅绝缘层；213、栅极层；214、第二栅绝缘层；215、层间介质层；216、源漏层；2161、源极；2162、漏极；217、钝化层；22、第一平坦层；23、导电层；24、第二平坦层；25、分隔层；20、隔离槽；201、第一槽体；2011、第一侧壁；2012、第二侧壁；202、第二槽体；2021、第三侧壁；2022、第四侧壁；3、发光器件层；31、第一电极层；32、发光功能层；33、第二电极层；34、像素定义层；4、第一阻挡坝；5、封装层；51、第一无机层；52、有机层；53、第二无机层；6、第二阻挡坝；001、开孔；002、像素区；003、过渡区；004、环形槽；7、分隔材料层；8、光刻胶层；81、去除区；100、显示面板；200、摄像装置。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的实施方式；相反，提供这些实施方式使得本公开将全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。图中相同的附图标记表示相同或类似的结构，因而将省略它们的详细描述。此外，附图仅为本公开的示意性图解，并非一定是按比例绘制。
用语“一个”、“一”、“该”、“所述”和“至少一个”用以表示存在一个或多个要素/组成部分/等；用语“包括”和“具有”用以表示开放式的包括在内的意思并且是指除了列出的要素/组成部分/等之外还可存在另外的要素/组成部分/等；用语“第一”、“第二”和“第三”等仅作为标记使用，不是对其对象的数量限制。
相关技术中，如图1所示，显示面板包括衬底1a、驱动层2a和发光器件层，驱动层2a设于衬底1a一侧，发光器件层设于驱动层2a背离衬底1a的一侧，用于显示图像。其中，驱动层2a具有像素电路，发光器件层包括多个发光器件，该发光器件可为OLED(Organic Light-Emitting  Diode，有机发光二极管)发光器件，其可包括向背离驱动层2a的方向依次层叠的第一电极、发光功能层3a和第二电极。同时，可通过驱动层2a***的驱动电路(例如发光控制电路和栅极驱动电路等)和像素驱动电路向第一电极和第二电极输入电信号，驱动发光功能层3a发光，从而显示图像。
显示面板可设有透光的开孔10a，可在衬底1a背离驱动层2a的一侧设置摄像头或其它摄像装置，透过开孔10a拍摄图像。但是，发光器件层中的发光功能层3a通常为有机材料，外界的水汽和氧气容易由开孔10a通过发光功能层3a进入显示面板内部，对发光器件产生腐蚀，缩短发光器件的寿命，影响显示效果。为此，可在显示面板中形成围绕开孔10a的隔离槽20a，使发光功能层3a在隔离槽20a内断开，从而切断水汽和氧气的入侵路径。举例而言：
驱动层2a具有围绕开孔10a的过渡区30a以及围绕过渡区30a的像素区40a，发光器件位于像素区40a的范围内，用于显示图像，但为了简化工艺，发光功能层3a可整层形成，从而延伸至过渡区30a。可在过渡区30a的驱动层2a上开设隔离槽20a，并在过渡区30a形成分隔层4a，分隔层4a覆盖隔离槽20a，分隔层4a从隔离槽20a的两侧向隔离槽20a内延伸，但不完全遮蔽隔离槽20a。分隔层4a延伸至隔离槽20a内的部分可形成“悬臂”结构。在通过蒸镀工艺形成发光功能层3a时，由于分隔层4a的遮挡，可在分隔层4a延伸至隔离槽20a内的区域靠近衬底1a的表面以及隔离槽20a的侧壁的至少部分区域上无法形成发光功能层3a，从而可使发光功能层3a在隔离槽20a内断开。当然，分隔层4a延伸至隔离槽20a内的部分靠近衬底1a的表面也无法形成发光功能层3a。
申请人发现，若采用上述的分隔层4a从两侧遮蔽隔离槽20a的结构，在进行后续的其它构图工艺时，若需要整层涂布光刻胶或形成其它膜层，由于分隔层4a从两侧进行了遮挡，可用于排气的通道缩小，使隔离槽20a内的气体难以完全排出，而被光刻胶或其它膜层封堵于隔离槽20a内，发生“裹气”现象；在进行抽真空或气压发生变化时，容易出现光刻胶或其它膜层破裂，影响工艺的正常进行，或者在开孔10a周围形成异常图案，影响显示效果。
需要说明的是，图1仅为说明相关技术中分隔层4a和隔离槽20a隔断发光功能层3a的原理，因而省去或简化了部分结构，并不构成对显示面板的实际结构的限定。
本公开实施方式提供了一种显示面板，该显示面板可以是OLED显示面板，如图2-图5和图13所示，显示面板可包括衬底1、驱动层2和发光器件层3，其中：
驱动层2设于衬底1一侧，且具有开孔001、位于开孔001外的像素区002以及分隔于开孔001和像素区002之间的过渡区003；驱动层2背离衬底1的表面设有向衬底1凹陷的隔离槽20，隔离槽20位于过渡区003且至少部分围绕开孔001。
隔离槽20包括沿凹陷方向朝衬底1依次连通的第一槽体201和第二槽体202，第二槽体202的一侧壁在衬底1的正投影位于第一槽体201在衬底1的正投影以外，第二槽体202的另一侧壁在衬底1的正投影位于第二槽体202的两侧壁在衬底1的正投影之间。
发光器件层3设于驱动层2背离衬底1的表面，且包括延伸至过渡区003的发光功能层32，发光功能层32在第二槽体202内断开。
在本公开实施方式的显示面板中，第一槽体201和第二槽体202虽然连通，但错开设置，可在保证切断水汽和氧气的侵蚀路径的情况下，方便排气，避免出现“裹气”现象。具体而言：由于第二槽体202的一侧壁在衬底1的正投影位于第一槽体201的两侧壁在衬底1的正投影以外，第二槽体202的另一侧壁在衬底1的正投影位于第二槽体202的两侧壁在衬底1的正投影之间，在垂直于衬底1的方向上，第二槽体202的两侧壁中一个被遮蔽，另一个被第一槽体201露出。使得发光功能层32至少无法形成在被第一槽体201遮蔽的侧壁和第一槽体201延伸至第二槽体202两侧壁之间的区域靠近衬底1的表面上，而在第二槽体202中断开，切断水汽和氧气的侵蚀路径。同时，第二槽体202的一侧壁不被遮蔽，便于扩大排气的通道，顺利排出气体，防止出现“裹气”现象，进而避免后续工艺的光刻胶或其它膜层出现破裂，最终避免出现异常图案，有利于改善显示效果。
下面对本公开实施方式显示面板进行详细说明：
衬底1为平板结构，其可采用玻璃等硬质材料，也可采用PI(聚酰亚胺)等柔性材料。衬底1可以是单层或多层结构，在此不做特殊限定。
如图2-图5所示，驱动层2设于衬底1一侧，用于驱动发光器件层3发光。同时，驱动层2具有开孔001、像素区002以及过渡区003。其中：
开孔001用于在摄像装置拍摄图像时透过光线，开孔001可贯穿驱动层2，露出衬底1，也可进一步贯穿衬底1。开孔001的形状可以是圆形、半圆形、腰圆形等，在此不对其形状做特殊限定。
像素区002用于发光，以显示图像。像素区002可围绕于开孔001以外，即开孔001周围均可显示图像；或者，开孔001的边界可与驱动层2的边界部分重合，相应的，像素区002不完全围绕于开孔001以外。本文仅以像素区002围绕于开孔001以外为例进行说明。
过渡区003分隔于开孔001和像素区002之间，例如，像素区002围绕于开孔001外，过渡区003为围绕开孔001一周的环形区域。
在本公开的一些实施方式中，如图3所示，驱动层2可包括像素电路层21、第一平坦层22、导电层23和第二平坦层24，其中：
像素电路层21可设于衬底1一侧，且至少部分位于像素区002内。像素电路层21可用于驱动发光器件层3发光，具体而言，像素电路层21可包括多个像素电路，且发光器件层3可包括多个发光器件，各像素电路一一对应的驱动各发光器件发光。
用于驱动发光器件层3发光的像素电路，像素电路可以是7T1C、7T2C、6T1C、6T2C或其它类型的像素电路，只要能驱动发光器件层3发光即可，在此不对其结构做特殊限定。其中，nTmC表示一个像素电路包括n个晶体管(用字母“T”表示)和m个电容(用字母“C”表示)。
像素电路至少包括驱动晶体管，以驱动晶体管的结构为例，如图3所示，像素电路层21可包括依次层叠于衬底1上的有源层211、第一栅绝缘层212、栅极层213、第二栅绝缘层214、层间介质层215、源漏层216和钝化层217，其中，源漏层216包括连接于有源层211的源极2161和漏极2162。钝化层217可覆盖源漏层216和层间介质层215。
第一平坦层22覆盖像素电路层21和像素电路层21，即覆盖源漏层 216和未被源漏层216覆盖的钝化层217。
导电层23设于第一平坦层22背离衬底1的表面，并与源漏层216连接，其材料可与源漏层216相同。导电层23的图案在此不做特殊下定。
第二平坦层24覆盖导电层23和第一平坦层22。第二平坦层24和第一平坦层22均可以采用透明的有机材料，且二者的材料可以相同。
上述的有源层211、栅极层213和源漏层216可位于像素区002内，而第一栅绝缘层212、第二栅绝缘层214、层间介质层215、钝化层217、第一平坦层22和第二平坦层24可位于像素区002和过渡区003，可以是整层结构。也就是说，在过渡区003内，第一栅绝缘层212、第二栅绝缘层214、层间介质层215、钝化层217、第一平坦层22和第二平坦层24相背离衬底1的方向依次层叠于衬底1上。
如图3和图13所示，基于上述的驱动层2，为了阻断发光功能层32，可在驱动层2背离衬底1的表面开设向衬底1凹陷的隔离槽20。且隔离槽20位于过渡区003，并至少部分围绕开孔001，例如，隔离槽20可为围绕开孔001一周的环形的槽。同时，隔离槽20包括沿凹陷方向朝衬底1依次连通的第一槽体201和第二槽体202，第一槽体201和第二槽体202错开设置，即，第一槽体201的一侧壁位于第二槽体202以外，第一槽体201的另一侧壁位于第二槽体202的两侧壁之间，即，第二槽体202的一侧壁在衬底1的正投影位于第一槽体201在衬底1的正投影以外，第二槽体202的另一侧壁在衬底1的正投影位于第一槽体201的两侧壁在衬底1的正投影之间，也就是说，第二槽体202的一侧壁被第一槽体201露出，便于气体排出，第二槽体202的另一侧壁未被露出，可免于形成发光功能层32，从而切断水汽和氧气入侵的路径。
进一步的，第一槽体201与第二槽体202在衬底1的正投影相交，且相交区域的面积小于第一槽体201在衬底1的正投影的面积，也就是说第一槽体201和第二槽体202在垂直于衬底1的方向上不完全。
第一槽体201与第二槽体202在衬底1的正投影的中心不重合，使得第一槽体201和第二槽体202错开设置。
为了形成上述的隔离槽20，驱动层2可包括向背离衬底1的方向层 叠的多个膜层，多个膜层中至少两个相邻膜层的材料不同，第一槽体201和第二槽体202位于相邻的两个材料不同的膜层中，以便于形成上述错开设置的第一槽体201和第二槽体202，举例而言：
在本公开的一些实施方式中，如图3和图13所示，驱动层2包括上述的像素电路层21、第一平坦层22、导电层23和第二平坦层24，可在第二平坦层24位于过渡区003内的区域开设第二槽体202，并在第二平坦层24背离衬底1的表面设置分隔层25，分隔层25与第二平坦层24在衬底1的正投影的交叠面积小于第二平坦层24在衬底1的正投影的面积，即分隔层25仅覆盖第二平坦层24的局部区域。在分隔层25上开设与第二槽体202错开连通的第一槽体201，从而得到隔离槽20。具体而言：
分隔层25设于第二平坦层24背离衬底1的表面且位于过渡区003。且第一槽体201为设于分隔层25的环形的槽，其沿垂直于衬底1的方向贯穿分隔层25，且围绕开孔001设置。第一槽体201包括相对的第一侧壁2011和第二侧壁2012。
第二槽体202设于第二平坦层24，且向衬底1凹陷，第二槽体202的深度可小于第二平坦层24的厚度，即不贯穿第二平坦层24，当然，也可等于或大于第二平坦层24的深度，从而贯穿第二平坦层24或凹陷至第一平坦层22内，在此不对第二槽体202的深度做特殊限定。第二槽体202包括相对的第三侧壁2021和第四侧壁2022。
第一侧壁2011位于第二槽体202以外，第二侧壁2012位于第三侧壁2021和第四侧壁2022之间，从而使第一槽体201和第二槽体202错开，使得第二槽体202仅有一个侧壁被第一槽体201露出，而另一侧壁则不被第一槽体201露出。
举例而言：如图3和图13所示，第一侧壁2011可位于第二侧壁2012背离开孔001的一侧，第三侧壁2021位于第四侧壁2022背离开孔001的一侧，且第一侧壁2011位于第三侧壁2021背离第四侧壁2022的一侧。
第二平坦层24位于第一侧壁2011与第三侧壁2021之间区域呈环形，且被第一槽体201露出，该区域的宽度，即第一侧壁2011与第三侧 壁2021的间距L，可为0.5μm-1μm，例如，L可为0.5μm、0.7μm或1μm等，当然，也可小于0.5μm，或大于1μm。此外，隔离槽20在垂直于衬底1的方向上的深度H可为0.3μm-0.5μm，深度H为第一槽体201和第二槽体202的深度之和，即分隔层25背离衬底1的表面与第一平坦层22背离衬底1的表面之间的距离。分隔层25位于第二槽体202内的区域的宽度W(例如图13中第二侧壁2012和第四侧壁2022之间的距离)，可为1.5μm-2μm。此外，第一槽体201的深度小于第二槽体202的深度。
当然，第一侧壁2011、第二侧壁2012、第三侧壁2021和第四侧壁2022与开孔001的相对位置可以变换，只要能保证第二槽体202仅有一个侧壁被第一槽体201露出即可。
为了便于形成上述隔离槽20，分隔层25的材料可采用氮化硅等一种或多种无机材料，且分隔层25的材料可与钝化层217相同。第二平坦层24的材料可采用一种或多种有机材料。从而可利用干法刻蚀对不同材料的蚀选择比形成第一槽体201和第二槽体202，详细工艺详见下文中显示面板的制造方法的实施方式，在此不再详述。第二平坦层24和分隔层25即为上述相邻的两个材料不同的膜层。
如图3所示，发光器件层3可设于驱动层2背离衬底1的表面，其可包括多个位于像素区002的发光器件，每个发光器件可与一像素电路的驱动晶体管连接，以便接收驱动信号。
发光器件可为OLED发光器件，其可包括发光功能层和位于发光功能层两侧的阴极和阳极，通过向阴极和阳极施加驱动信号，可使有机发光层发光，OLED发光器件的发光原理在此不做特殊限定。其中，可通过像素电路向阳极施加驱动信号。举例而言：
在本公开的一些实施方式中，如图3所示，发光器件层3可包括第一电极层31、发光功能层32和第二电极层33，其中：
第一电极层31设于驱动层2背离衬底1的表面，且位于像素区002，第一电极层31可包括多个第一电极，每个第一电极可作为一发光器件的阳极，并与导电层23连接，再通过导电层23与源漏层216连接。
发光功能层32可设于第一电极层31背离衬底1的表面，且为延伸至过渡区003的连续膜层，以便整层形成，避免采用精细掩膜版来形成。 发光功能层32覆盖隔离槽20所处的区域，且在隔离槽20处延伸至隔离槽20内，但至少在第二槽体202不被第一槽体201露出的侧壁(例如第四侧壁2022)和分隔层25位于第二槽体202内的区域靠近衬底1的表面处断开，从而切断水汽和氧气侵入的路径。当然，分隔层25延伸至第二槽体202内的区域靠近衬底1的表面也无法形成发光功能层32。
发光功能层32为有机发光材料的多层结构，举例而言：发光功能层32可至少包括依次层叠于第一电极层31上的空穴注入层、空穴传输层、有机发光层、电子传输层和电子注入层。发光功能层32的各膜层中，可以仅有部分膜层延伸至过渡区003，也可全部延伸至过渡区003。
第二电极层33覆盖发光功能层32，其可作为发光器件的阴极，且至少部分位于像素区002。例如，第二电极层33为金属材质，其位于像素区002和过渡区003，但由于其制造工艺与发光功能层32不同，因而不限定第二电极层33其在隔离槽20内断开。
在本公开的一些实施方式中。第二电极层33可为多层结构，例如，其可包括依次向背离衬底1的方向层叠的第一金属层、第二金属层和第三金属层，其中，第一金属层和第三金属层的材料可为铝，第二金属层的材料可为银。当然第二电极层33也可采用其它多层结构或单层结构，且材料和结构均不做特殊限定。
各个发光器件可共用同一发光功能层32，或者共用发光功能层32中整层设置的膜层。同时，各个发光器件共用同一第二电极层33。
此外，为了在发光功能层32中限定出各个发光器件的范围，发光器件层3还可包括像素定义层34，其可设于第二平坦层24背离衬底1的表面，像素定义层34设有多个开口，每个开口露出一个第一电极，在开口范围内的发光功能层32和第二电极层33与被开口露出的第一电极可作为一个发光器件。
如图3和图4所示，所示，本公开的显示面板还可包括第一阻挡坝4和封装层5，其中：
第一阻挡坝4设于过渡区003且围绕开孔001，第一阻挡坝4凸出于驱动层2背离衬底1的表面。举例而言，过渡区003可设有露出钝化层217的环形槽004，第一阻挡坝4为围绕开孔001设置的环形凸棱， 其可设于钝化层217背离衬底1的表面，且位于该环形槽004内。第一阻挡坝4可与第一平坦层22或第二平坦层24采用相同的采用，通过灰阶掩膜等工艺一次形成；或者，第一阻挡坝4也可为多层结构，在此不对其具体结构做特殊限定。当然，第一阻挡坝4也可设置于第一平坦层22或第二平坦层24背离衬底1的表面。
如图3和图4所示，封装层5覆盖发光器件层3和第一阻挡坝4，且封装层5包括第一无机层51、有机层52和第二无机层53，其中：
第一无机层51覆盖发光器件层3、第一阻挡坝4和隔离槽20，且第一无机层51第一阻挡坝4处匹配凸起，在隔离槽20处匹配凹陷，并可在隔离槽20内连续延伸而不断开。
有机层52设于第一无机层51背离衬底1的表面，且限定于第一阻挡坝4背离开孔001的一侧。
第二无机层53覆盖有机层52和第一无机层51。
进一步的，如图3和图4所示，显示面板还可包括第二阻挡坝6，其可设于过渡区003，且位于第一阻挡坝4靠近开孔001的一侧，且第二阻挡坝6背离衬底1的表面位于第一阻挡坝4背离衬底1的表面背离衬底1的一侧，即第二阻挡坝6的顶部高于第一阻挡坝4的顶部，通过第二阻挡坝6可防范有机层52向开孔001延伸。此外，发光功能层32覆盖第二阻挡坝6，第二电极层33也延伸至发光功能层32对应于第二阻挡坝6的区域。
进一步的，如图3和图4所示，在本公开的一些实施方式中，隔离槽20的数量可为多个，且第一阻挡坝4和第二阻挡坝6位于相邻的两个隔离槽20之间。举例而言：隔离槽20的数量为四个，且围绕开孔001同心设置，第一阻挡坝4和第二阻挡坝6位于中间两个隔离槽20之间。有机层52可填充于第一阻挡坝4背离开孔001一侧的隔离槽20内。
本公开实施方式还提供一种显示面板的制造方法，该显示面板可以是上述任意实施方式的显示面板，其结构在此不再详述，如图6所示，该制造方法可包括步骤S110-步骤S120，其中：
步骤S110、在衬底一侧形成驱动层，所述驱动层具有开孔、位于所述开孔外的像素区以及分隔于所述开孔和所述像素区之间的过渡区。
步骤S120、在所述驱动层背离所述衬底的表面形成隔离槽，所述隔离槽位于所述过渡区且至少部分围绕所述开孔；所述隔离槽包括朝所述衬底依次连通的第一槽体和第二槽体，所述第二槽体的一侧壁在所述衬底的正投影位于所述第一槽体在所述衬底的正投影以外，所述第二槽体的另一侧壁在所述衬底的正投影位于所述第一槽体的两侧壁在所述衬底的正投影之间。
在本公开的一些实施方式中，如图2和图3所示，驱动层2包括像素电路层21、第一平坦层22、导电层23和第二平坦层24，详细结构可参考显示面板的实施方式，在此不在详述。相应的，如图7所示，在所述驱动层背离所述衬底的表面形成向所述衬底凹陷的隔离槽；即步骤S120，可包括步骤S1210-步骤S1260，其中：
步骤S1210、在所述第二平坦层背离所述衬底的表面形成分隔材料层；所述分隔材料层与所述第二平坦层的材料不同。
如图8所示，分隔材料层7可完全覆盖第二平坦层24背离衬底1的表面。
步骤S1220、对所述分隔材料层进行光刻工艺，得到分隔层，所述分隔层位于所述过渡区，且具有露出所述第二平坦层的第一槽体；所述第一槽体包括相对的第一侧壁和第二侧壁。
如图9所示，光刻工艺可包括涂布光刻胶、曝光、显影和刻蚀等工序，可使分隔材料层7图案化，去除过渡区003以外的分隔材料层7，并在过渡区003内的分隔材料层7内形成露出第二平坦层24的第一槽体201，从而得到分隔层25。分隔层25的具体结构已在上文显示面板的实施方式中进行了详细说明，在此不再详述。
步骤S1230、形成覆盖所述分隔层并填充所述第一槽体的光刻胶层。
如图10所示，光刻胶层8可覆盖分隔层25和第二平坦层24未被分隔层25覆盖的区域。
步骤S1240、对所述光刻胶层进行曝光并显影，形成围绕所述开孔的去除区；所述去除区在所述第二平坦层上的正投影位于所述第一槽体内，且所述去除区背离所述开孔的侧壁位于所述第一侧壁的靠近所述开孔的一侧，所述去除区靠近所述开孔的侧壁与所述第二侧壁在所述第二 平坦层的正投影重合。
如图11所示，在对光刻胶层8进行曝光并显影后，去除部分光刻胶层8，形成去除区81，去除区81为围绕于开孔001外的露出第二平坦层24的环形凹槽，去除区81在第二平坦层24的正投影位于第一槽体201内，且去除区81靠近开孔001的侧壁与第一槽体201的第二侧壁2012在垂直于衬底1的方向上对齐(即二者在第二平坦层24的正投影重合)，该去除区81背离开孔001的侧壁与第一槽体201的第一侧壁2011之间具有一定的距离，使得第一侧壁2011被光刻胶层8覆盖。
步骤S1250、通过干刻工艺对所述去除区内的所述第二平坦层进行刻蚀，得到第二槽体；所述第二槽体包括相对的第三侧壁和第四侧壁；所述第一侧壁在所述衬底的正投影位于所述第二槽体在所述衬底的正投影以外，所述第二侧壁在所述衬底的正投影位于所述第三侧壁和所述第四侧壁在所述衬底的正投影之间。
如图12所示，第二槽体202的第三侧壁2021被第一槽体201露出，而第四侧壁2022则不被第一槽体201露出，第二槽体202与第一槽体201在垂直于衬底1的方向上连通成隔离槽20。隔离槽20的详细结构可参考显示面板的实施方式，在此不再详述。
可采用氧气对去除区81露出的第二平坦层24进行干法刻蚀，若光刻胶层8与第二平坦层24采用相同的材料，干法刻蚀对二者无选择比，因此，为了避免光刻胶层8的厚度较薄而难以保护分隔层25和第二平坦层24，刻蚀光刻胶层8的厚度为2.5μm-3.5μm，例如该厚度可以是3.0μm。
步骤S1260、去除所述光刻胶层。
如图13所示，可采用灰化或其它工艺驱动光刻胶层8，从而露出分隔层25和第二平坦层24，在此不对去除光刻胶层8的工艺做特殊限定。
需要说明的是，上述的图7-图12仅为示意性示出隔离槽20的形成过程，因而省去或简化了部分结构。同时，尽管在附图中以特定顺序描述了本公开中制造方法的各个步骤，但是，这并非要求或者暗示必须按照该特定顺序来执行这些步骤，或是必须执行全部所示的步骤才能实现期望的结果。附加的或备选的，可以省略某些步骤，将多个步骤合并为一个步骤执行，以及/或者将一个步骤分解为多个步骤执行等。
本公开制造方法中显示面板的具体细节和有益效果可参考上文显示面板的实施方式，在此不再详述。
本公开实施方式还提供一种显示装置，如图14所示，该显示装置可包括显示面板100和摄像装置200，其中：
显示面板100可以是上述任意实施方式的显示面板，其结构可参考上文中显示面板的实施方式，在此不再详述。
摄像装置200设于衬底1背离驱动层2的一侧，摄像装置200在驱动层2上的正投影与开孔001至少部分重合，且摄像装置200用于透过开孔001拍摄图像。摄像装置200可以包括镜头和光电传感器等，在此不对摄像装置200的具体结构做特殊限定，只要能拍摄图像既可。
本公开的显示装置可以是手机、平板电脑、电视等具有显示和拍摄功能的电子设备，在此不再一一列举。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本公开的其它实施方案。本申请旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和精神由所附的权利要求指出。

Claims (19)

  1. 一种显示面板，其中，包括：
    衬底；
    驱动层，设于所述衬底一侧，且具有开孔、位于所述开孔外的像素区以及分隔于所述开孔和所述像素区之间的过渡区；所述驱动层背离所述衬底的表面设有隔离槽，所述隔离槽位于所述过渡区且至少部分围绕所述开孔；所述隔离槽包括朝所述衬底依次连通的第一槽体和第二槽体，所述第二槽体的一侧壁在所述衬底的正投影位于所述第一槽体在所述衬底的正投影以外，所述第二槽体的另一侧壁在所述衬底的正投影位于所述第一槽体的两侧壁在所述衬底的正投影之间；
    发光器件层，设于所述驱动层背离所述衬底的表面，且包括延伸至所述过渡区的发光功能层，所述发光功能层在所述第二槽体内断开。
  2. 根据权利要求1所述的显示面板，其中，所述驱动层包括：
    像素电路层，设于所述衬底一侧；
    第一平坦层，覆盖所述像素电路层；
    导电层，设于所述第一平坦层背离所述衬底的表面；
    第二平坦层，覆盖所述导电层和所述第一平坦层；所述第二槽体设于所述第二平坦层；
    分隔层，设于所述第二平坦层背离所述衬底的表面且位于所述过渡区；所述分隔层与所述第二平坦层的材料不同，所述第一槽体设于所述分隔层。
  3. 根据权利要求1所述的显示面板，其中，所述第一槽体包括相对的第一侧壁和第二侧壁，所述第二槽体包括相对的第三侧壁和第四侧壁；
    所述第一侧壁位于所述第二侧壁背离所述开孔的一侧，所述第三侧壁位于所述第四侧壁背离所述开孔的一侧；
    所述第一侧壁位于所述第三侧壁背离所述第四侧壁的一侧，所述第二侧壁位于所述第三侧壁和所述第四侧壁之间。
  4. 根据权利要求3所述的显示面板，其中，所述第一侧壁与所述第三侧壁的间距为0.5μm-1μm。
  5. 根据权利要求1所述的显示面板，其中，所述显示面板还包括：
    第一阻挡坝，设于所述过渡区且围绕所述开孔，所述第一阻挡坝凸出于所述驱动层背离所述衬底的表面；所述发光功能层覆盖所述第一阻挡坝；
    封装层，覆盖所述发光器件层和所述第一阻挡坝，所述封装层包括有机层，所述有机层被所述第一阻挡坝限定于所述第一阻挡坝背离所述开孔的一侧。
  6. 根据权利要求5所述的显示面板，其中，所述发光器件层还包括：
    第一电极层，设于所述驱动层背离所述衬底的表面，且位于所述像素区；所述发光功能层设于所述第一电极层背离所述衬底的表面；
    第二电极层，覆盖所述发光功能层，且至少部分位于所述像素区；
    所述封装层还包括：
    第一无机层，覆盖所述发光器件层、所述第一阻挡坝和所述隔离槽；所述有机层设于所述第一无机层背离所述衬底的表面；
    第二无机层，覆盖所述有机层和所述第一无机层。
  7. 根据权利要求5所述的显示面板，其中，所述显示面板还包括：
    第二阻挡坝，设于所述过渡区，且位于所述第一阻挡坝靠近所述开孔的一侧；所述第二阻挡坝背离所述衬底的表面位于所述第一阻挡坝背离所述衬底的表面背离所述衬底的一侧；
    所述发光功能层覆盖所述第二阻挡坝。
  8. 根据权利要求7所述的显示面板，其中，所述隔离槽的数量为多个，且所述第一阻挡坝和所述第二阻挡坝位于相邻的两个所述隔离槽之间。
  9. 根据权利要求2所述的显示面板，其中，所述分隔层的材料为无机材料；所述第二平坦层的材料为有机材料。
  10. 根据权利要求1所述的显示面板，其中，所述第一槽体与所述第二槽体在所述衬底的正投影相交，且相交区域的面积小于所述第一槽体在所述衬底的正投影的面积。
  11. 根据权利要求1所述的显示面板，其中，所述第一槽体与所述第二槽体在所述衬底的正投影的中心不重合。
  12. 根据权利要求2所述的显示面板，其中，所述分隔层与所述第 二平坦层在所述衬底的正投影的交叠面积小于所述第二平坦层在所述衬底的正投影的面积。
  13. 根据权利要求3所述的显示面板，其中，所述第一槽体的深度小于所述第二槽体的深度。
  14. 根据权利要求1所述的显示面板，其中，所述驱动层包括向背离衬底的方向层叠的多个膜层，多个所述膜层中至少两个相邻的材料不同的膜层，所述第一槽体和所述第二槽***于相邻的两个材料不同的所述膜层中。
  15. 一种显示面板的制造方法，其中，包括：
    在衬底一侧形成驱动层，所述驱动层具有开孔、位于所述开孔外的像素区以及分隔于所述开孔和所述像素区之间的过渡区；
    在所述驱动层背离所述衬底的表面形成隔离槽，所述隔离槽位于所述过渡区且至少部分围绕所述开孔；所述隔离槽位于所述过渡区且至少部分围绕所述开孔；所述隔离槽包括朝所述衬底依次连通的第一槽体和第二槽体，所述第二槽体的一侧壁在所述衬底的正投影位于所述第一槽体在所述衬底的正投影以外，所述第二槽体的另一侧壁在所述衬底的正投影位于所述第一槽体的两侧壁在所述衬底的正投影之间。
  16. 根据权利要求15所述的制造方法，其中，所述驱动层包括：
    像素电路层，设于所述衬底一侧；
    第一平坦层，覆盖所述像素电路层；
    导电层，设于所述第一平坦层背离所述衬底的表面；
    第二平坦层，覆盖所述导电层和所述第一平坦层；
    在所述驱动层背离所述衬底的表面形成隔离槽；包括：
    在所述第二平坦层背离所述衬底的表面形成分隔材料层；所述分隔材料层与所述第二平坦层的材料不同；
    对所述分隔材料层进行光刻工艺，得到分隔层；所述分隔层位于所述过渡区，且具有露出所述第二平坦层的第一槽体；所述第一槽体包括第一侧壁和第二侧壁；
    形成覆盖所述分隔层并填充所述第一槽体的光刻胶层；
    对所述光刻胶层进行曝光并显影，在所述过渡区内形成围绕所述开 孔的去除区；所述去除区露出所述第二平坦层，所述去除区在所述第二平坦层上的正投影位于所述第一槽体内；所述去除区背离所述开孔的侧壁位于所述第一侧壁靠近所述开孔的一侧，所述去除区靠近所述开孔的侧壁与所述第二侧壁在所述第二平坦层的正投影重合；
    通过干刻工艺对所述去除区内的所述第二平坦层进行刻蚀，得到第二槽体；所述第二槽体包括相对的第三侧壁和第四侧壁；所述第一侧壁在所述衬底的正投影位于所述第二槽体在所述衬底的正投影以外，所述第二侧壁在所述衬底的正投影位于所述第三侧壁和所述第四侧壁在所述衬底的正投影之间；
    去除所述光刻胶层。
  17. 根据权利要求16所述的制造方法，其中，所述光刻胶层的厚度为3.0μm。
  18. 根据权利要求16所述的制造方法，其中，所述分隔层的材料为无机材料；所述第二平坦层的材料为有机材料。
  19. 一种显示装置，其中，包括：
    权利要求1-14任一项所述的显示面板；
    摄像装置，设于所述衬底背离所述驱动层的一侧，所述摄像装置在所述驱动层上的正投影与所述开孔至少部分重合，且所述摄像装置用于透过所述开孔拍摄图像。
PCT/CN2020/139675 2020-12-25 2020-12-25 显示装置、显示面板及其制造方法 WO2022134092A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US17/630,275 US20220399524A1 (en) 2020-12-25 2020-12-25 Display device, and display panel and method of manufacturing the same
PCT/CN2020/139675 WO2022134092A1 (zh) 2020-12-25 2020-12-25 显示装置、显示面板及其制造方法
CN202080003691.4A CN115280506A (zh) 2020-12-25 2020-12-25 显示装置、显示面板及其制造方法
CN202111009749.9A CN113725232A (zh) 2020-12-25 2021-08-31 显示基板及其制作方法、显示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/139675 WO2022134092A1 (zh) 2020-12-25 2020-12-25 显示装置、显示面板及其制造方法

Publications (1)

Publication Number Publication Date
WO2022134092A1 true WO2022134092A1 (zh) 2022-06-30

Family

ID=78679591

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/139675 WO2022134092A1 (zh) 2020-12-25 2020-12-25 显示装置、显示面板及其制造方法

Country Status (3)

Country Link
US (1) US20220399524A1 (zh)
CN (2) CN115280506A (zh)
WO (1) WO2022134092A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023201581A1 (zh) * 2022-04-20 2023-10-26 京东方科技集团股份有限公司 显示面板及制作方法、显示装置
CN117652222A (zh) * 2022-06-29 2024-03-05 京东方科技集团股份有限公司 基板及其制作方法、显示面板
WO2024000422A1 (zh) * 2022-06-30 2024-01-04 京东方科技集团股份有限公司 一种显示装置及其制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110265583A (zh) * 2019-07-26 2019-09-20 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN110600526A (zh) * 2019-09-30 2019-12-20 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN110634928A (zh) * 2019-09-26 2019-12-31 武汉天马微电子有限公司 一种显示面板及显示装置
CN110739342A (zh) * 2019-11-28 2020-01-31 京东方科技集团股份有限公司 显示面板及其制备方法和显示装置
CN111244112A (zh) * 2020-01-20 2020-06-05 京东方科技集团股份有限公司 显示面板、显示装置和显示面板的制作方法
CN111415974A (zh) * 2020-04-29 2020-07-14 武汉华星光电半导体显示技术有限公司 Oled显示面板及其制备方法
US20200343485A1 (en) * 2016-02-16 2020-10-29 Samsung Display Co., Ltd. Organic light-emitting display apparatus and fabrication method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7038239B2 (en) * 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10361385B2 (en) * 2016-02-12 2019-07-23 Samsung Display Co., Ltd. Display device
KR102592956B1 (ko) * 2016-08-29 2023-10-24 삼성디스플레이 주식회사 디스플레이 장치
CN107424519B (zh) * 2017-06-26 2019-09-24 武汉天马微电子有限公司 柔性显示面板及柔性显示装置
CN108493155B (zh) * 2018-05-31 2020-12-08 京东方科技集团股份有限公司 连接结构及其制作方法、阵列基板及其制作方法
CN111584602B (zh) * 2020-05-28 2023-04-07 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200343485A1 (en) * 2016-02-16 2020-10-29 Samsung Display Co., Ltd. Organic light-emitting display apparatus and fabrication method thereof
CN110265583A (zh) * 2019-07-26 2019-09-20 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN110634928A (zh) * 2019-09-26 2019-12-31 武汉天马微电子有限公司 一种显示面板及显示装置
CN110600526A (zh) * 2019-09-30 2019-12-20 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN110739342A (zh) * 2019-11-28 2020-01-31 京东方科技集团股份有限公司 显示面板及其制备方法和显示装置
CN111244112A (zh) * 2020-01-20 2020-06-05 京东方科技集团股份有限公司 显示面板、显示装置和显示面板的制作方法
CN111415974A (zh) * 2020-04-29 2020-07-14 武汉华星光电半导体显示技术有限公司 Oled显示面板及其制备方法

Also Published As

Publication number Publication date
US20220399524A1 (en) 2022-12-15
CN115280506A (zh) 2022-11-01
CN113725232A (zh) 2021-11-30

Similar Documents

Publication Publication Date Title
WO2022134092A1 (zh) 显示装置、显示面板及其制造方法
US11864413B2 (en) Display substrate and method for manufacturing the same, display device
US11903234B2 (en) Display substrate, preparation method thereof and display device
WO2021164617A1 (zh) 显示面板和显示装置
US10297792B2 (en) Display device having a micro-cavity structure and method for forming the same
TWI806137B (zh) 有機發光顯示裝置之畫素排列結構
CN111933822B (zh) 显示面板的制作方法、显示面板以及显示装置
US20200176604A1 (en) Thin film transistor, method of fabricating the same, array substrate and display device
WO2021218394A1 (zh) 显示面板、其制作方法及显示装置
WO2021143643A1 (zh) 显示基板及其制作方法、和显示装置
US11527738B2 (en) Display substrate comprising metal layer structure in non-display region and with recessed side surface,preparation method thereof, and display device
CN112071889B (zh) 一种阵列基板、显示装置及制作方法
CN111564478B (zh) 可拉伸显示基板及其制备方法、显示装置
CN110265469B (zh) 显示装置及其显示基板、显示基板的制作方法
US11257868B2 (en) Display substrate, fabricating method thereof and display device
WO2021184235A1 (zh) 一种阵列基板及其制备方法和显示面板
CN113745269A (zh) 显示基板及其制备方法、显示面板、显示装置
CN111463242A (zh) 一种显示面板、其制作方法及显示装置
WO2021155630A1 (zh) 一种阵列基板及其制备方法、显示面板
WO2020177666A1 (zh) 像素单元及其制造方法、显示基板
US20240057449A1 (en) Display panel and display device
CN216698369U (zh) 显示基板及显示装置
CN114122029A (zh) 显示面板及其制作方法、显示装置
WO2023093252A9 (zh) 显示基板及其制备方法、显示装置
WO2022126450A1 (zh) 显示装置、显示面板及其制造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20966655

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205 DATED 20/10/2023)

122 Ep: pct application non-entry in european phase

Ref document number: 20966655

Country of ref document: EP

Kind code of ref document: A1