WO2022125187A3 - Low temperature sintered thermoelectric material highly strained nano structures with secondary nano coating - Google Patents

Low temperature sintered thermoelectric material highly strained nano structures with secondary nano coating Download PDF

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Publication number
WO2022125187A3
WO2022125187A3 PCT/US2021/054986 US2021054986W WO2022125187A3 WO 2022125187 A3 WO2022125187 A3 WO 2022125187A3 US 2021054986 W US2021054986 W US 2021054986W WO 2022125187 A3 WO2022125187 A3 WO 2022125187A3
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WO
WIPO (PCT)
Prior art keywords
nano
thermoelectric material
low temperature
temperature sintered
material highly
Prior art date
Application number
PCT/US2021/054986
Other languages
French (fr)
Other versions
WO2022125187A2 (en
Inventor
John J. Carberry
Original Assignee
Carberry John J
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carberry John J filed Critical Carberry John J
Publication of WO2022125187A2 publication Critical patent/WO2022125187A2/en
Publication of WO2022125187A3 publication Critical patent/WO2022125187A3/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/18Non-metallic particles coated with metal

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  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)

Abstract

A sintered thermoelectric pellet with a nano thick electrically conductive metallic coating constructed to decouple and manage optimal performance in thermal conductivity, Seebeck coefficient and electrical conductivity. A porous structure of a doped silicon thermoelectric material optimally is doped to establish a negative and positive type semiconductor bias to provide the ability to make a PIN semiconductor junction.
PCT/US2021/054986 2020-10-14 2021-10-14 Low temperature sintered thermoelectric material being highly strained nano structures with a secondary nano coating of a conductive metal able to conduct electrons but block phonons WO2022125187A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063091479P 2020-10-14 2020-10-14
US63/091,479 2020-10-14

Publications (2)

Publication Number Publication Date
WO2022125187A2 WO2022125187A2 (en) 2022-06-16
WO2022125187A3 true WO2022125187A3 (en) 2022-09-09

Family

ID=81974864

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2021/054986 WO2022125187A2 (en) 2020-10-14 2021-10-14 Low temperature sintered thermoelectric material being highly strained nano structures with a secondary nano coating of a conductive metal able to conduct electrons but block phonons

Country Status (1)

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WO (1) WO2022125187A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090272416A1 (en) * 2006-06-26 2009-11-05 Diamond Innovations, Inc. Increasing the seebeck coefficient of semiconductors by hpht sintering
US20130307200A1 (en) * 2011-11-02 2013-11-21 John Carberry Sintered Polycrystalline Silicon-based Thermoelectrics
US20170125805A1 (en) * 2015-07-06 2017-05-04 Mossey Creek Technologies Inc. Porous Sintered Superstructure with Interstitial Silicon for Use in Anodes for Lithium Batteries

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090272416A1 (en) * 2006-06-26 2009-11-05 Diamond Innovations, Inc. Increasing the seebeck coefficient of semiconductors by hpht sintering
US20130307200A1 (en) * 2011-11-02 2013-11-21 John Carberry Sintered Polycrystalline Silicon-based Thermoelectrics
US20170125805A1 (en) * 2015-07-06 2017-05-04 Mossey Creek Technologies Inc. Porous Sintered Superstructure with Interstitial Silicon for Use in Anodes for Lithium Batteries

Also Published As

Publication number Publication date
WO2022125187A2 (en) 2022-06-16

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