WO2022125187A3 - Low temperature sintered thermoelectric material highly strained nano structures with secondary nano coating - Google Patents
Low temperature sintered thermoelectric material highly strained nano structures with secondary nano coating Download PDFInfo
- Publication number
- WO2022125187A3 WO2022125187A3 PCT/US2021/054986 US2021054986W WO2022125187A3 WO 2022125187 A3 WO2022125187 A3 WO 2022125187A3 US 2021054986 W US2021054986 W US 2021054986W WO 2022125187 A3 WO2022125187 A3 WO 2022125187A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nano
- thermoelectric material
- low temperature
- temperature sintered
- material highly
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/18—Non-metallic particles coated with metal
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- Silicon Compounds (AREA)
- Powder Metallurgy (AREA)
Abstract
A sintered thermoelectric pellet with a nano thick electrically conductive metallic coating constructed to decouple and manage optimal performance in thermal conductivity, Seebeck coefficient and electrical conductivity. A porous structure of a doped silicon thermoelectric material optimally is doped to establish a negative and positive type semiconductor bias to provide the ability to make a PIN semiconductor junction.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063091479P | 2020-10-14 | 2020-10-14 | |
US63/091,479 | 2020-10-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2022125187A2 WO2022125187A2 (en) | 2022-06-16 |
WO2022125187A3 true WO2022125187A3 (en) | 2022-09-09 |
Family
ID=81974864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2021/054986 WO2022125187A2 (en) | 2020-10-14 | 2021-10-14 | Low temperature sintered thermoelectric material being highly strained nano structures with a secondary nano coating of a conductive metal able to conduct electrons but block phonons |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2022125187A2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090272416A1 (en) * | 2006-06-26 | 2009-11-05 | Diamond Innovations, Inc. | Increasing the seebeck coefficient of semiconductors by hpht sintering |
US20130307200A1 (en) * | 2011-11-02 | 2013-11-21 | John Carberry | Sintered Polycrystalline Silicon-based Thermoelectrics |
US20170125805A1 (en) * | 2015-07-06 | 2017-05-04 | Mossey Creek Technologies Inc. | Porous Sintered Superstructure with Interstitial Silicon for Use in Anodes for Lithium Batteries |
-
2021
- 2021-10-14 WO PCT/US2021/054986 patent/WO2022125187A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090272416A1 (en) * | 2006-06-26 | 2009-11-05 | Diamond Innovations, Inc. | Increasing the seebeck coefficient of semiconductors by hpht sintering |
US20130307200A1 (en) * | 2011-11-02 | 2013-11-21 | John Carberry | Sintered Polycrystalline Silicon-based Thermoelectrics |
US20170125805A1 (en) * | 2015-07-06 | 2017-05-04 | Mossey Creek Technologies Inc. | Porous Sintered Superstructure with Interstitial Silicon for Use in Anodes for Lithium Batteries |
Also Published As
Publication number | Publication date |
---|---|
WO2022125187A2 (en) | 2022-06-16 |
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