WO2022111459A1 - 芯片结构、摄像组件和电子设备 - Google Patents

芯片结构、摄像组件和电子设备 Download PDF

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Publication number
WO2022111459A1
WO2022111459A1 PCT/CN2021/132366 CN2021132366W WO2022111459A1 WO 2022111459 A1 WO2022111459 A1 WO 2022111459A1 CN 2021132366 W CN2021132366 W CN 2021132366W WO 2022111459 A1 WO2022111459 A1 WO 2022111459A1
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light
substrate
transmitting
sub
chip structure
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PCT/CN2021/132366
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English (en)
French (fr)
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杨子东
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维沃移动通信有限公司
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Publication of WO2022111459A1 publication Critical patent/WO2022111459A1/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device

Definitions

  • the present application belongs to the technical field of terminals, and specifically relates to a chip structure, a camera assembly and an electronic device.
  • each pixel allows one type of light to pass through, but the passband is wide and the color is not pure enough.
  • the final color restoration of the subject is not accurate enough, it is difficult to obtain high-precision color information, and the camera effect is not good.
  • the purpose of the embodiments of the present application is to provide a chip structure, a camera assembly, and an electronic device, which are used to solve the problems of a wide passband in an existing camera chip, difficulty in obtaining high-precision color information, and poor camera effect.
  • the embodiment of the present application provides a chip structure, including:
  • the length of each resonant cavity in the thickness direction of the substrate can be adjusted.
  • each of the pixel units includes at least two of the sub-pixels, and the wavelengths of light filtered by the resonant structures in the sub-pixels in each of the pixel units are different.
  • the resonant cavity is filled with light-transmitting filler, and the length of the light-transmitting filler in the thickness direction of the substrate and/or the refractive index of the light-transmitting filler can be adjusted.
  • the light-transmitting filler includes electrostrictive polymer and/or electro-optic effect polymer.
  • the resonant structure includes:
  • a light-transmitting conductive layer the light-transmitting substrate and the light-transmitting conductive layer are arranged in parallel and spaced apart, a first reflective layer is provided on the surface of the light-transmitting substrate near the light-transmitting conductive layer, and the light-transmitting substrate is A second reflective layer is provided on a surface of the conductive layer close to the light-transmitting substrate, and the first reflective layer is spaced apart from the second reflective layer to form the resonant cavity.
  • the chip structure further includes:
  • a light condensing structure is provided on the side of the substrate facing the pixel unit.
  • the chip structure further includes:
  • each of the sub-pixels has the photosensitive element respectively, and at least two of the resonance structures in each of the sub-pixels are located between the light-converging structure and the photosensitive element.
  • the chip structure further includes:
  • a wiring layer, the photosensitive elements are respectively electrically connected to the wiring layer.
  • Embodiments of the present application further provide a camera assembly, including the chip structure described in the foregoing embodiments.
  • Embodiments of the present application further provide an electronic device, including the camera assembly described in the foregoing embodiments.
  • a chip structure includes: a substrate, on which there are pixel units distributed in an array, each of the pixel units has sub-pixels, and each of the sub-pixels has at least two resonance structures , each of the resonant structures has a resonant cavity, and at least two of the resonant structures in each of the sub-pixels are spaced apart along the thickness direction of the substrate.
  • each of the sub-pixels has at least two resonant structures, each of the resonant structures has a resonant cavity, and a narrow-band filter function can be realized through the multi-stage resonant cavity, so that the light transmission through The light band is highly concentrated, so that the light of a specific band is transmitted, and the color accuracy is high, so that high-precision color information can be obtained, and the camera effect can be improved.
  • FIG. 1 is a schematic structural diagram of a chip structure in an embodiment of the present application.
  • Fig. 2 is a structural schematic diagram of the resonance structure in the embodiment of the present application.
  • Fig. 3 is another structural schematic diagram of the resonance structure in the embodiment of the present application.
  • Fig. 4 is another structural schematic diagram of the resonance structure in the embodiment of the present application.
  • Fig. 5 is a schematic diagram of the image formation fusion map obtained by the acquisition of light of different wavelength bands
  • Fig. 6 is a schematic diagram of conventional pixel primary color arrangement
  • Fig. 7 is a schematic diagram of pixel primary color arrangement in the chip structure in the present application.
  • FIG. 8 is a filter map of a conventional camera chip
  • Fig. 9 is the filter spectrum of the chip structure in the present application.
  • Figure 10 is a schematic diagram of the multi-beam interference of light between two substrates
  • Figure 11 is a schematic diagram of the spectroscopic properties of a Fabry-Perot cavity
  • FIG. 12 is a schematic diagram of the filtering process of the chip structure in the present application.
  • a chip structure includes a substrate 10 on which there are pixel units distributed in an array, each pixel unit has sub-pixels, and each sub-pixel has at least two resonances
  • Each resonant structure has a resonant cavity 20 , and at least two resonant structures in each sub-pixel are spaced apart along the thickness direction of the substrate 10 .
  • the substrate 10 may be a light-transmitting substrate, and each pixel unit may have one or at least two sub-pixels, for example, each pixel unit may have three or four sub-pixels.
  • At least two sub-pixels in each pixel unit may be spaced apart, for example, each pixel unit has four sub-pixels, and the four sub-pixels may be distributed in an array.
  • Each sub-pixel may have at least two resonant structures, for example, each sub-pixel has two resonant structures, each resonant structure has one resonant cavity 20 , and the two resonant structures in each sub-pixel are along the thickness of the substrate 10 The directions are spaced apart, and unnecessary light can be filtered by the resonator cavities 20 in at least two resonant structures in each sub-pixel, so that light in a narrower wavelength band can be transmitted.
  • each of the resonant structures has a resonant cavity 20 , and the filtering function of a narrower wavelength band can be realized through the multi-stage resonant cavity 20 .
  • the transmitted light band is highly concentrated, so that the light in a specific band is transmitted, and the color accuracy is high, so that high-precision color information can be obtained, and the imaging effect can be improved.
  • the length of each resonant cavity 20 in the thickness direction of the substrate 10 can be adjusted.
  • the length of each resonant cavity 20 in the thickness direction of the substrate 10 can be adjusted individually, and the length of the resonant cavity 20 in the thickness direction of the substrate 10 can be adjusted according to the wavelength of the light to be filtered, so that light in a specific wavelength band can be transmitted through However, the color accuracy is high.
  • each pixel can only capture one of R-G-B (representing red light-green light-blue light), each pixel unit of the chip structure in this application can be adjusted by adjusting the resonant cavity 20 to capture the full spectrum.
  • the wavelength band of light to be captured (eg, visible light, infrared light and ultraviolet light) can be changed by adjusting the lengths of at least two resonant cavities 20 in the thickness direction of the substrate 10 .
  • an interference filter structure that can filter light is made according to the principle of beam interference between parallel substrates.
  • the chip structure may be composed of two parallel spaced apart first light-transmitting substrates 81 and second light-transmitting substrates 83 .
  • the first light-transmitting substrate 81 and the second light-transmitting substrate 83 are glass or quartz plates.
  • the opposite surfaces of the first transparent substrate 81 and the second transparent substrate 83 respectively have conductive circuits or conductive layers, and a third reflective layer 82 is provided on the opposite side of the first transparent substrate 81 and the second transparent substrate 83 , a fourth reflective layer 84 is arranged on the opposite side of the second light-transmitting substrate 83 and the first light-transmitting substrate 81, thereby defining the resonant cavity 20, the third reflective layer 82 and the fourth reflective layer 84 can transmit light, and can The light in the cavity 20 is reflected.
  • a dielectric material can be filled in the resonant cavity 20, and the length of the filled dielectric material in the thickness direction and the refractive index of the dielectric material can be adjusted, such as an electrostrictive polymer.
  • the principle of multi -beam interference can be shown in Fig. 10.
  • the length of the resonant cavity 20 in the thickness direction of the substrate can be h. Reflection (such as ray 1) occurs, the refraction angle of the light incident into the medium with the refractive index n is ⁇ 2 , and the light entering the medium with the refractive index n exits and enters the medium with the refractive index n 0.
  • Reflection such as ray 1
  • transmitted beam 2', and transmitted beam 3' have relatively close light intensities, so multi-beam interference phenomenon can occur.
  • the resonant cavity 20 may be a Fabry-Perot cavity, and the spectral characteristics of the Fabry-Perot cavity are shown in FIG. 11 , and there are several peaks. Under the action of an applied voltage, the length of the resonant cavity 20 in the thickness direction of the substrate 10 or the refractive index of the medium in the resonant cavity 20 changes, so that the wavelength of the transmission peak of the resonant cavity 20 shifts.
  • the two resonant cavities of each pixel unit can be electrically connected to the display screen.
  • the length of the resonant cavity 20 in the thickness direction of the substrate 10 or the refractive index of the medium in the resonant cavity 20 changes, so that the The wavelength of the transmission peak of each resonant cavity 20 is shifted, and the length of each resonant cavity 20 in the thickness direction of the substrate 10 or the refractive index of the medium in the resonant cavity 20 can be controlled respectively by controlling the voltage, so that the two resonant cavities The transmission peak wavelength shifts.
  • the wavelength position of one transmission peak of the two resonators 20 is the same, and the other transmission peaks are different, only the light waves with the same peak can pass through, and the light waves of other wavelengths cannot pass.
  • the transmission peak of each resonator 20 can be shifted in the same way, and the transmission wavelength of the system can be shifted to realize tunable filtering.
  • the filtering process of transmittance is shown in FIG. 12 .
  • each pixel unit includes at least two sub-pixels, for example, each pixel unit includes three or four sub-pixels, and the resonant structure in the sub-pixels in each pixel unit filters The wavelengths of light are different.
  • the light filtered by the resonant structure in the sub-pixels in each pixel unit is red light, blue light and green light, and the obtained light has a pure color and high accuracy.
  • the resonant cavity 20 may be filled with light-transmitting fillers, and the length of the light-transmitting fillers in the thickness direction of the substrate 10 and/or the refractive index of the light-transmitting fillers can be adjusted.
  • the length of the light filler in the thickness direction of the substrate 10 and/or the refractive index of the light-transmitting filler can adjust the wavelength of light that the resonant cavity 20 can filter.
  • the light-transmitting filler can include electrostrictive polymers and/or electro-optic effect polymers, and the electrostrictive polymers can expand and contract along a certain direction when electrified, such as along the thickness direction of the substrate 10 . , so that the length of the resonant cavity 20 in the thickness direction of the substrate 10 can be adjusted, thereby adjusting the wavelength of the light that the resonant cavity 20 can filter.
  • the resonant structure may include a light-transmitting substrate 30 and a light-transmitting conductive layer 40 .
  • the light-transmitting substrate 30 may be a flat glass with a conductive circuit on the surface, and the flat glass faces the light-transmitting conductive layer.
  • a conductive circuit may be provided on one side surface of the layer 40, the light-transmitting conductive layer 40 may be arranged on a glass plate, the light-transmitting substrate 30 and the light-transmitting conductive layer 40 are arranged in parallel and spaced apart, and the light-transmitting substrate 30 is close to the light-transmitting conductive layer 40.
  • a first reflective layer 41 is provided on one side surface of the light-transmitting conductive layer 40
  • a second reflective layer 42 is provided on the side surface of the light-transmitting conductive layer 40 close to the light-transmitting substrate 30, and the first reflective layer 41 and the second reflective layer 42 are spaced apart to form a resonance In the cavity 20 , the first reflective layer 41 and the second reflective layer 42 play the role of reflecting light in the resonant cavity 20 .
  • at least one of the light-transmitting substrate 30 and the light-transmitting conductive layer 40 can move along the thickness direction of the substrate 10
  • at least one of the light-transmitting substrate 30 and the light-transmitting conductive layer 40 can move along the thickness direction of the substrate 10 .
  • the distance between the light-transmitting substrate 30 and the light-transmitting conductive layer 40 is adjusted to adjust the length of the resonant cavity 20 in the thickness direction of the substrate 10 .
  • the resonant cavity 20 can be filled with an electrostrictive polymer, and under the condition of electrification, the electrostrictive polymer can expand and contract, and at least one of the transparent substrate 30 and the transparent conductive layer 40 is driven by the expansion and contraction of the electrostrictive polymer.
  • One moves along the thickness direction of the substrate 10 thereby adjusting the length of the resonant cavity 20 in the thickness direction of the substrate 10 .
  • the chip structure may further include a light concentrating structure 50 .
  • the light concentrating structure 50 is disposed on the side of the substrate 10 facing the pixel unit, and the light is condensed by the light concentrating structure 50 and then projected to the pixel.
  • the resonant cavity 20 in the unit, and then the undesired light is filtered through the resonant cavity 20 .
  • the light condensing structure 50 can be a micro lens, which can be located on the top of the substrate, and the light condensing structure 50 can play the role of concentrating light and increasing the amount of incoming light.
  • the chip structure may further include a photosensitive element 60 , for example, the photosensitive element 60 may be a photodiode, each sub-pixel has a photosensitive element 60 respectively, and at least two resonances in each sub-pixel
  • the structure is located between the light concentrating structure 50 and the photosensitive element 60.
  • the light filtered by the resonant cavity 20 can be received by the photosensitive element 60, and the photosensitive element 60 converts the received light signal (such as light intensity) into an electrical signal.
  • the chip structure may further include a wiring layer 70 , the photosensitive elements 60 are respectively electrically connected to the wiring layer 70 , and the wiring layer 70 can be provided with the circuit of the chip, and the photosensitive element can be connected to the wiring layer 70 through the wiring layer 70 .
  • the signal transmission processing module of the element 60 the required image is obtained by processing the signal through the processing module.
  • each sub-pixel has two resonant structures, each resonant structure has a resonant cavity 20 , and the resonant structure located above has a resonant cavity 20 It is a first-level resonant cavity, the resonant cavity 20 of the resonant structure located below is a second-level resonant cavity, the two resonant structures in each sub-pixel are spaced apart along the thickness direction of the substrate 10, and the multi-level resonator structures on each pixel unit
  • the resonators can be individually adjusted.
  • the first-level resonant cavity is placed above the second-level resonant cavity, and the transmission of different bands can be achieved by controlling the distance between the two substrates; the second-level resonant cavity is placed below the first-level resonant cavity, and different bands can be realized by controlling the distance between the two substrates. through.
  • the light of different wavelength bands is different color.
  • the light emitted by the object is filtered by the pixel unit resonator to become a single wavelength band light, that is, a single color light.
  • the camera pixel unit adjusts the voltage to make it.
  • the lengths (A and a) of the two resonant cavities in the thickness direction of the substrate 10 change, so that the wavelength band of the light transmitted through the joint action of the primary resonant cavity and the secondary resonant cavity can be adjusted, so that the emitted light in the object can be adjusted.
  • the light in the wavelength band corresponding to the color of the light passes through, and the light in other wavelength bands is filtered out. Therefore, by controlling the lengths of the first-level resonant cavity and the second-level resonant cavity of each pixel unit in the thickness direction of the substrate 10, different acquisitions can be achieved. color, so as to achieve high-precision color display.
  • the length A of the primary resonant cavity of the pixel unit i in the thickness direction of the substrate 10 is adjusted by voltage to be A1, and the secondary resonance is adjusted at the same time.
  • the length a of the cavity in the thickness direction of the substrate 10 is set to be a1, so that only red light can pass through; when it is to be used as a green pixel of the same conventional camera chip, the first-order resonant cavity of the pixel unit i is adjusted by voltage at
  • the length A in the thickness direction of the substrate 10 is set to be A2
  • the length a of the secondary resonant cavity in the thickness direction of the substrate 10 is adjusted to be a2, so that only green light can pass through; when using When used as the blue pixel of the conventional camera chip, the length A of the first-level resonant cavity of the pixel unit i in the thickness direction of the substrate 10 is adjusted by voltage to be A3, and the thickness of the second-level resonant cavity in the substrate 10 is adjusted at the same time.
  • the length a in the direction is a3, so that only blue light can pass through; and so on, to receive different colors of light, adjust the length A of the primary resonant cavity in the thickness direction of the substrate 10 and the secondary resonance
  • the length a of the cavity in the thickness direction of the substrate 10 allows the light of the corresponding color (wavelength band) to pass through, and the other color (wavelength band) light is filtered out, thereby obtaining high-precision color information and improving the quality of the captured image.
  • the light reflected by the object not only includes visible light, but also light other than visible light, such as infrared, ultraviolet, etc. These lights contain information unique to the material, and the material can be identified by analyzing this information.
  • the secondary resonant cavity can be adjusted so that light of different wavelength bands can be captured and imaged by the chip. As shown in Figure 5, one image is taken when corresponding to light of different wavelength bands (for example, images P1, P2, P3, P4). and P5), and finally through algorithm fusion, a fusion graph is obtained, which can realize special functions such as substance recognition.
  • the chip structure in the present application can achieve accurate color restoration of the subject.
  • the filter function can be realized.
  • the filtering map of the present application is shown in Figure 9;
  • the filter spectrum of the chip is shown in Figure 8, in which the curve R represents red light, the curve G represents green light, and the curve B represents blue light. It can be seen from Figure 8 that the light band that the traditional filter chip can pass is not concentrated enough, and R-G-B three The color is not pure enough; comparing Fig. 8 and Fig.
  • Embodiments of the present application provide a camera assembly, including the chip structure described in the foregoing embodiments.
  • the camera assembly with the chip structure in the above embodiment can accurately acquire the color information of the object to be photographed, thereby improving the photographing effect.
  • Embodiments of the present application provide an electronic device, including the camera assembly described in the foregoing embodiments.
  • the electronic device with the camera assembly in the above embodiment has good shooting effect, high image quality, and improves the shooting experience of the user.

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Abstract

本申请公开了一种芯片结构、摄像组件和电子设备,属于终端技术领域,芯片结构包括:基片,所述基片上具有呈阵列分布的像素单元,每个所述像素单元中具有子像素,每个所述子像素中具有至少两个谐振结构,每个所述谐振结构中具有谐振腔,每个所述子像素中的至少两个所述谐振结构沿所述基片的厚度方向间隔开设置。

Description

芯片结构、摄像组件和电子设备
相关申请的交叉引用
本申请主张在2020年11月30日在中国提交的中国专利申请No.202011380432.1的优先权,其全部内容通过引用包含于此。
技术领域
本申请属于终端技术领域,具体涉及一种芯片结构、摄像组件和电子设备。
背景技术
用户对移动智能终端体验的要求越来越高,摄像头的要求越来越高,摄像头所具备的功能也越来越丰富。常规摄像头芯片中,每种像素点让一种光通过,但通带较宽,颜色不够纯粹,最终还原被摄物体的颜色不够精准,不易获取高精度颜色信息,摄像效果不好。
发明内容
本申请实施例的目的是提供一种芯片结构、摄像组件和电子设备,用以解决现有摄像头芯片中的通带较宽,不易获取高精度颜色信息,摄像效果不好的问题。
为了解决上述技术问题,本申请是这样实现的:
本申请实施例提供了一种芯片结构,包括:
基片,所述基片上具有呈阵列分布的像素单元,每个所述像素单元中具有子像素,每个所述子像素中具有至少两个谐振结构,每个所述谐振结构中具有谐振腔,每个所述子像素中的至少两个所述谐振结构沿所述基片的厚度方向间隔开设置。
其中,每个所述谐振腔在所述基片的厚度方向上的长度可调节。
其中,每个所述像素单元中包括至少两个所述子像素,且每个所述像素 单元中的所述子像素中的谐振结构所过滤的光线的波长不同。
其中,所述谐振腔中填充有透光填充物,所述透光填充物在所述基片的厚度方向上的长度和/或所述透光填充物的折射率可调节。
其中,所述透光填充物包括电致伸缩聚合物和/或电光效应聚合物。
其中,所述谐振结构包括:
透光基板;
透光导电层,所述透光基板和所述透光导电层平行间隔开设置,所述透光基板的靠近所述透光导电层的一侧表面设有第一反射层,所述透光导电层的靠近所述透光基板的一侧表面设有第二反射层,所述第一反射层与所述第二反射层间隔开形成所述谐振腔。
其中,所述芯片结构还包括:
聚光结构,所述聚光结构设置于所述基片朝向所述像素单元的一侧。
其中,所述芯片结构还包括:
感光元件,每个所述子像素中分别具有所述感光元件,每个所述子像素中的至少两个所述谐振结构位于所述聚光结构与所述感光元件之间。
其中,所述芯片结构还包括:
走线层,所述感光元件分别与所述走线层电连接。
本申请实施例还提供一种摄像组件,包括如上述实施例中所述的芯片结构。
本申请实施例还提供一种电子设备,包括如上述实施例中所述的摄像组件。
根据本申请实施例的芯片结构,包括:基片,所述基片上具有呈阵列分布的像素单元,每个所述像素单元中具有子像素,每个所述子像素中具有至少两个谐振结构,每个所述谐振结构中具有谐振腔,每个所述子像素中的至少两个所述谐振结构沿所述基片的厚度方向间隔开设置。在本申请的芯片结构中,在每个所述子像素中具有至少两个谐振结构,每个所述谐振结构中具有谐振腔,通过多级谐振腔可以实现窄波段滤光功能,使得透过的光线波段 高度集中,使得特定波段的光透过,颜色精度高,从而能够获取高精度的颜色信息,提高摄像效果。
附图说明
图1是本申请实施例中芯片结构的一个结构示意图;
图2是本申请实施例中谐振结构的一个结构示意图;
图3是本申请实施例中谐振结构的另一个结构示意图;
图4是本申请实施例中谐振结构的又一个结构示意图;
图5是不同波段光线的获取的图像形成融合图的一个示意图;
图6是传统的像素基色排列的一个示意图;
图7是本申请中芯片结构中的像素基色排列的一个示意图;
图8是常规摄像头芯片的滤光图谱;
图9是本申请中芯片结构的滤光图谱;
图10是光线在两基板之间的多束干涉原理图;
图11是法布里-珀罗腔体的分光特性示意图;
图12是本申请中芯片结构滤波过程的一个示意图。
附图标记
基片10;
谐振腔20;
透光基板30;
透光导电层40;第一反射层41;第二反射层42;
聚光结构50;
感光元件60;
走线层70;
第一透光基板81;第三反射层82;第二透光基板83;第四反射层84。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
本申请的说明书和权利要求书中的术语“第一”、“第二”等是用于区别类似的对象,而不用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换,以便本申请的实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外,说明书以及权利要求中“和/或”表示所连接对象的至少其中之一,字符“/”,一般表示前后关联对象是一种“或”的关系。
下面结合附图1至图12,通过具体的实施例及其应用场景对本申请实施例提供的芯片结构进行详细地说明。
如图1所示,根据本申请实施例的芯片结构,包括基片10,基片10上具有呈阵列分布的像素单元,每个像素单元中具有子像素,每个子像素中具有至少两个谐振结构,每个谐振结构中具有谐振腔20,每个子像素中的至少两个谐振结构沿基片10的厚度方向间隔开设置。其中,基片10可以为透光基片,每个像素单元中可以具有一个或至少两个子像素,比如,每个像素单元中可以具有三个或四个子像素。每个像素单元中的至少两个子像素可以间隔开分布,比如,每个像素单元中具有四个子像素,四个子像素可以呈阵列分布。每个子像素中可以具有至少两个谐振结构,比如,每个子像素中具有两个谐振结构,每个谐振结构中具有一个谐振腔20,每个子像素中的两个谐振结构沿基片10的厚度方向间隔开设置,通过每个子像素中的至少两个谐振结构中的谐振腔20能够过滤不需要的光线,使得较窄波段的光线透过。在本申请的芯片结构中,在每个所述子像素中具有至少两个谐振结构,每个所述谐振结构中具有谐振腔20,通过多级谐振腔20可以实现较窄波段的滤光功能,使得透过的光线波段高度集中,使得特定波段的光透过,颜色精度高,从而能够获取高精度的颜色信息,提高摄像效果。
在一些实施例中,每个谐振腔20在基片10的厚度方向上的长度可调节,通过调节每个谐振腔20在基片10的厚度方向上的长度调节可以通过谐振腔20的光线的波长,每个谐振腔20在基片10的厚度方向上的长度可以单独调节,可以根据需要过滤的光线的波长调节谐振腔20在基片10的厚度方向上的长度,使得特定波段的光透过,颜色精度高。和常规摄像头每个像素点只能捕获R-G-B(表示红色光-绿色光-蓝色光)其中一种光不同,本申请中芯片结构的每个像素单元均可通过调节谐振腔20针对捕捉全频谱内某单一波段的光,比如通过调节至少两个谐振腔20在基片10的厚度方向上的长度来改变要捕获的光波段(比如可见光、红外光和紫外光)。
在实际应用过程中,根据平行基板对光束干涉原理制成可以滤光的干涉滤光结构。如图4所示,芯片结构可以由两个平行间隔开的第一透光基板81和第二透光基板83构成,第一透光基板81和第二透光基板83为玻璃或石英板,第一透光基板81和第二透光基板83上相对的表面分别具有导电电路或导电层,在第一透光基板81上与第二透光基板83相对的一侧设置第三反射层82,在第二透光基板83上与第一透光基板81相对的一侧设置第四反射层84,进而限定出谐振腔20,第三反射层82和第四反射层84可以透光,可以对谐振腔20中的光线进行反射。在谐振腔20中可以填充介质材料,填充的介质材料在厚度方向上的长度以及介质材料的折射率可以调节,比如电致伸缩聚合物。多光束干涉原理可以如图10所示,谐振腔20在基板的厚度方向上的长度可以为h,光线以角度θ 0从折射率为n 0的介质入射至折射率为n的介质,部分光线发生反射(如光线1),入射至折射率为n的介质中的光线的折射角为θ 2,进入折射率为n的介质中的光线出射后进入折射率为n 0的介质,整个过程中的反射光束2、反射光束3、反射光束4和透射光束1′、透射光束2′、透射光束3′的光强比较接近,因此可以产生多束干涉现象。
其中,谐振腔20可以为法布里-珀罗腔体,法布里-珀罗腔体的分光特性如图11所示,存在数个波峰。谐振腔20在外加电压的作用下,谐振腔20在基片10的厚度方向上的长度或者谐振腔20内的介质折射率发生变化,使得 谐振腔20的透射峰的波长发生移动。每个像素单元的两个谐振腔均可以和显示屏电气连接,在外加电压的作用下,谐振腔20在基片10的厚度方向上的长度或谐振腔20内的介质折射率发生变化,使得每个谐振腔20的透射峰的波长发生移动,通过控制电压可以分别控制每个谐振腔20在基片10的厚度方向上的长度或谐振腔20内的介质折射率,从而使得两个谐振腔的透射峰波长发生移动。
通过设计参数使得两个谐振腔20有一个透射峰的波长位置是相同的,而其他的透射率波峰均不同,则只有和此峰值相同的光波可以通过,其它波长的光波无法通过。通过电压调节可以使各个谐振腔20的透射峰发生相同移动,就可以使***的透射波长发生移动,实现可调谐滤光,透过率的滤波过程如图12所示。
在本申请的实施例中,每个像素单元中包括至少两个子像素,比如,每个像素单元中包括三个或四个子像素,且每个像素单元中的子像素中的谐振结构所过滤的光线的波长不同,比如,每个像素单元中的子像素中的谐振结构所过滤的光线为红光、蓝光和绿光,获得的光线的颜色纯正,精确度高。
在本申请的实施例中,谐振腔20中可以填充有透光填充物,透光填充物在基片10的厚度方向上的长度和/或透光填充物的折射率可调节,通过调节透光填充物在基片10的厚度方向上的长度和/或透光填充物的折射率可以调节谐振腔20能够过滤的光线的波长。
可选地,透光填充物可以包括电致伸缩聚合物和/或电光效应聚合物,电致伸缩聚合物在通电情况下可以沿着一定的方向伸缩,比如沿着基片10的厚度方向伸缩,从而可以调节谐振腔20在基片10的厚度方向上的长度,进而调节谐振腔20能够过滤的光线的波长。
在本申请的实施例中,如图3所示,谐振结构可以包括透光基板30和透光导电层40,透光基板30可以为表面具有导电电路的平板玻璃,平板玻璃的朝向透光导电层40的一侧表面可以设有导电电路,透光导电层40可以设置在玻璃板上,透光基板30和透光导电层40平行间隔开设置,透光基板30 的靠近透光导电层40的一侧表面设有第一反射层41,透光导电层40的靠近透光基板30的一侧表面设有第二反射层42,第一反射层41与第二反射层42间隔开形成谐振腔20,第一反射层41与第二反射层42在谐振腔20内起到反射光线的作用。其中,透光基板30和透光导电层40中的至少一个可以沿着基板10的厚度方向移动,通过透光基板30和透光导电层40中的至少一个沿着基板10的厚度方向移动可以调节透光基板30和透光导电层40之间的间距,实现调节谐振腔20在基片10的厚度方向上的长度。在谐振腔20中可以填充电致伸缩聚合物,在通电情况下,电致伸缩聚合物可以发生伸缩,通过电致伸缩聚合物的伸缩来带动透光基板30和透光导电层40中的至少一个沿着基板10的厚度方向移动,进而调节谐振腔20在基片10的厚度方向上的长度。
在一些实施例中,如图1所示,芯片结构还可以包括聚光结构50,聚光结构50设置于基片10朝向像素单元的一侧,光线通过聚光结构50聚光后投射向像素单元中的谐振腔20,进而通过谐振腔20对不需要的光线进行过滤。聚光结构50可以为微镜头,可以位于基片的最上方,聚光结构50可以起到聚集光线,增加进光量的作用。
在另一些实施例中,如图1所示,芯片结构还可以包括感光元件60,比如感光元件60可以为光电二极管,每个子像素中分别具有感光元件60,每个子像素中的至少两个谐振结构位于聚光结构50与感光元件60之间,经过谐振腔20过滤的光线可以通过感光元件60接收,感光元件60将接收到的光信号(比如光强)转变为电信号。
可选地,如图1所示,芯片结构还可以包括走线层70,感光元件60分别与走线层70电连接,走线层70可以设置芯片的电路,通过走线层70可以将感光元件60的信号传输中处理模块,通过处理模块对信号进行处理得到所需要的图像。
在本申请的实施例中,比如,如图1和图2所示,每个子像素中具有两个谐振结构,每个谐振结构中具有一个谐振腔20,位于上方的谐振结构具有 的谐振腔20为一级谐振腔,位于下方的谐振结构具有的谐振腔20为二级谐振腔,每个子像素中的两个谐振结构沿基片10的厚度方向间隔开设置,每个像素单元上的多级谐振腔均可单独调节。
其中,一级谐振腔置于二级谐振腔上方,通过控制两基板的距离可以实现不同波段的透过;二级谐振腔置于一级谐振腔的下方,通过控制两基板的距离实现不同波段的透过。光的波段和光的颜色具有对应关系,不同波段的光即为不同颜色,被摄物体发出的光线经像素单元谐振腔过滤后成为单一波段光,即为单一颜色光,摄像头像素单元通过调节电压使两个谐振腔在基片10的厚度方向上的长度(A和a)变化,从而使得经过一级谐振腔和二级谐振腔共同作用后透过的光线波段能够调整,使得被摄物体中发出光线的颜色所对应波段的光线通过,其他波段的光线被滤除,所以通过控制每个像素单元的一级谐振腔和二级谐振腔在基片10的厚度方向上的长度,可以实现获取不同的颜色,从而实现高精度颜色的显示。
比如,当某像素单元要用作同常规摄像头芯片红色像素时,通过电压调节像素单元i的一级谐振腔在基片10的厚度方向上的长度A,使其为A1,同时调节二级谐振腔在基片10的厚度方向上的长度a,使其为a1,使仅有红色光能通过;当要用作同常规摄像头芯片绿色像素时,通过电压调节像素单元i的一级谐振腔在基片10的厚度方向上的长度A,使其为A2,同时调节二级谐振腔在基片10的厚度方向上的长度a,使其为a2,使仅有绿色光能通过;当要用作同常规摄像头芯片蓝色像素时,通过电压调节像素单元i的一级谐振腔在基片10的厚度方向上的长度A,使其为A3,同时调节二级谐振腔在基片10的厚度方向上的长度a,使其为a3,使仅有蓝色光能通过;依此类推,要接收不同颜色光时,调节一级谐振腔在基片10的厚度方向上的长度A和二级谐振腔在基片10的厚度方向上的长度a,使对应颜色(波段)的光通过,其他颜色(波段)光被滤除,从而获取高精度的颜色信息,有利于提高拍摄的图像质量。
在应用过程中,被摄物体反射光线不仅仅包含可见光,也有可见光以外 的光线,例如红外、紫外光等,这些光线包含了物质所独有的信息,通过分析这些信息可以对物质进行识别。在拍照时,可以通过调节二级谐振腔,使得不同波段光线可以被芯片采集成像,如图5所示,在对应不同波段光时各拍摄一张图像(比如,图像P1、P2、P3、P4和P5),最后通过算法融合,得到一张融合图,可以实现例如物质识别的特殊功能。
通过本申请中的芯片结构可实现更多种颜色作为基色还原被摄颜色。如图6所示,传统方案颜色基于R-G-B三基色,以还原被摄物体颜色;如图7所示,本申请可以实现更丰富颜色做基色,比如,R(R1、R2、R3、R4)-G(G1、G2、G3、G4)-B(B1、B2、B3、B4),可以更精确地还原被摄物体的颜色。
本申请中的芯片结构可实现被摄物体颜色精准还原,通过调节本申请中芯片结构的各像素单元的二级谐振腔,可以实现滤光功能,本申请滤波图谱如图9所示;常规摄像头芯片的滤光图谱如图8所示,其中,曲线R表示红色光,曲线G表示绿色光,曲线B表示蓝色光,由图8可见,传统滤光芯片可通过的光波段不够集中,R-G-B三种颜色不够纯粹;对比图8和图9可知,本申请中R-G-B三种颜色光波段高度集中,在颜色滤波精度远优于传统滤光方案,可接收精准的R-G-B三种颜色光,以精准还原被色物体颜色。
本申请实施例提供一种摄像组件,包括如上述实施例中所述的芯片结构。具有上述实施例中芯片结构的摄像组件能够精确地获取被拍摄物体的颜色信息,提高拍摄效果。
本申请实施例提供一种电子设备,包括如上述实施例中所述的摄像组件。具有上述实施例中摄像组件的电子设备拍摄效果好,图像质量高,提高用户的拍摄体验。
上面结合附图对本申请的实施例进行了描述,但是本申请并不局限于上述的具体实施方式,上述的具体实施方式仅仅是示意性的,而不是限制性的,本领域的普通技术人员在本申请的启示下,在不脱离本申请宗旨和权利要求所保护的范围情况下,还可做出很多形式,均属于本申请的保护之内。

Claims (11)

  1. 一种芯片结构,包括:
    基片,所述基片上具有呈阵列分布的像素单元,每个所述像素单元中具有子像素,每个所述子像素中具有至少两个谐振结构,每个所述谐振结构中具有谐振腔,每个所述子像素中的至少两个所述谐振结构沿所述基片的厚度方向间隔开设置。
  2. 根据权利要求1所述的芯片结构,其中,每个所述谐振腔在所述基片的厚度方向上的长度可调节。
  3. 根据权利要求1所述的芯片结构,其中,每个所述像素单元中包括至少两个所述子像素,且每个所述像素单元中的所述子像素中的谐振结构所过滤的光线的波长不同。
  4. 根据权利要求1所述的芯片结构,其中,所述谐振腔中填充有透光填充物,所述透光填充物在所述基片的厚度方向上的长度和/或所述透光填充物的折射率可调节。
  5. 根据权利要求4所述的芯片结构,其中,所述透光填充物包括电致伸缩聚合物和/或电光效应聚合物。
  6. 根据权利要求1-5中任一项所述的芯片结构,其中,所述谐振结构包括:
    透光基板;
    透光导电层,所述透光基板和所述透光导电层平行间隔开设置,所述透光基板的靠近所述透光导电层的一侧表面设有第一反射层,所述透光导电层的靠近所述透光基板的一侧表面设有第二反射层,所述第一反射层与所述第二反射层间隔开形成所述谐振腔。
  7. 根据权利要求1所述的芯片结构,其中,还包括:
    聚光结构,所述聚光结构设置于所述基片朝向所述像素单元的一侧。
  8. 根据权利要求7所述的芯片结构,其中,还包括:
    感光元件,每个所述子像素中分别具有所述感光元件,每个所述子像素中的至少两个所述谐振结构位于所述聚光结构与所述感光元件之间。
  9. 根据权利要求8所述的芯片结构,其中,还包括:
    走线层,所述感光元件分别与所述走线层电连接。
  10. 一种摄像组件,包括如权利要求1-9中任一项所述的芯片结构。
  11. 一种电子设备,包括如权利要求10中所述的摄像组件。
PCT/CN2021/132366 2020-11-30 2021-11-23 芯片结构、摄像组件和电子设备 WO2022111459A1 (zh)

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