WO2022105794A1 - 工艺腔室及半导体工艺设备 - Google Patents
工艺腔室及半导体工艺设备 Download PDFInfo
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- WO2022105794A1 WO2022105794A1 PCT/CN2021/131205 CN2021131205W WO2022105794A1 WO 2022105794 A1 WO2022105794 A1 WO 2022105794A1 CN 2021131205 W CN2021131205 W CN 2021131205W WO 2022105794 A1 WO2022105794 A1 WO 2022105794A1
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- process chamber
- cantilever
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 230000008569 process Effects 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000012423 maintenance Methods 0.000 claims description 26
- 238000009434 installation Methods 0.000 claims description 17
- 235000012431 wafers Nutrition 0.000 claims description 16
- 230000007423 decrease Effects 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 238000000465 moulding Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2005—Seal mechanisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20207—Tilt
Definitions
- the present application relates to the technical field of semiconductor processing, and in particular, the present application relates to a process chamber and semiconductor process equipment.
- plasma processing equipment is widely used in today's semiconductor, solar cell and flat panel display manufacturing processes.
- the types of discharges that have been used in plasma processing equipment are capacitively coupled plasma (CCP) type, inductively coupled plasma (ICP) type, and electron cyclotron resonance plasma (ECR) type.
- CCP capacitively coupled plasma
- ICP inductively coupled plasma
- ECR electron cyclotron resonance plasma
- these discharge types are widely used in physical vapor deposition (Physical Vapour Deposition, PVD), plasma etching and chemical vapor deposition (Chemical Vapor Deposition, CVD), plasma immersion ion implantation (Plasma Immersion Ion Implantation, PIII) etc.
- Semiconductor process equipment In order to ensure good uniformity of the etching results from the center to the edge of the wafer, the process environment requires the process chamber RF circuit of the semiconductor process equipment to have good uniformity, and also requires the process chamber temperature to have good uniformity.
- the base is installed in the process chamber through a cantilever. Due to factors such as processing tolerances and assembly tolerances, there is a small gap between the cantilever and the chamber wall of the process chamber, resulting in electrical and thermal conductivity between the two. poor, resulting in lower wafer yield.
- the present application proposes a process chamber and semiconductor process equipment, which are used to solve the problem of poor electrical conductivity and thermal conductivity between the base and the process chamber in the prior art, thereby causing wafer yield Less technical issues.
- an embodiment of the present application provides a process chamber, which is applied to semiconductor process equipment, including: a chamber body, a base and a chuck assembly; a reaction chamber is formed in the chamber body, and the base is The seat is located in the reaction chamber, and the chuck assembly is connected to the base for carrying wafers;
- the base includes a base body and a plurality of cantilevers, the plurality of cantilevers are spaced and evenly arranged along the circumference of the base body, and each cantilever is respectively connected to the inner wall of the chamber body and the the outer wall of the base body;
- the chamber body, the base body and the cantilever are integrally formed and made of a material with electrical and thermal conductivity.
- the base body has an accommodating cavity, and the accommodating cavity has an upward opening; a plurality of the cantilevers are provided with installations that communicate with the accommodating cavity. a channel, the chamber body is provided with a through hole, and the through hole communicates the installation channel with the outside of the chamber body;
- the chuck assembly is sealingly connected with the base body to seal the opening of the accommodating cavity.
- the installation channel has an upward opening on the cantilever, and the opening communicates with the accommodating cavity;
- the chuck assembly is also sealingly connected to a plurality of the cantilevers for sealing the opening of the mounting channel.
- the chuck assembly includes an interface disk, and the interface disk includes a disk main body and a plurality of cover plates connected thereto, wherein the disk main body is sealedly connected with the base body, to seal the opening of the accommodating cavity;
- the number of the cover plates is the same as the number of the cantilevers, a plurality of the cover plates are spaced apart and evenly distributed around the disk main body, and each of the cover plates is in a one-to-one correspondence with each of the cantilevers in a sealed connection, to seal the opening of the mounting channel.
- a positioning structure is provided between each of the cover plates and the corresponding cantilever arm, so as to limit the position of the cover plate on the cantilever arm.
- each of the positioning structures includes at least a pair of mutually matched positioning recesses and positioning protrusions, and the positioning recesses are provided on two surfaces of the cover plate and the cantilever that are opposite to each other. on one of them; the positioning convex portion is arranged on the other of the two surfaces of the cover plate and the cantilever that are opposite to each other.
- the base body includes a side wall and a bottom cover, the bottom cover is detachably disposed on the bottom of the side wall, the upper surface of the bottom cover and the bottom cover of the side wall are detachable.
- the inner surface surrounds the accommodating cavity;
- a maintenance port is provided on the chamber body at a position corresponding to the bottom cover, and the maintenance port communicates with the reaction chamber.
- the diameter of the outer wall of the bottom cover gradually decreases along a vertical direction away from the side wall.
- two connecting flanges are correspondingly disposed on the outer surface of the side wall and the bottom cover, and the two connecting flanges are stacked on each other in the vertical direction, and pass through the Multiple fasteners for fixed connection.
- an embodiment of the present application provides a semiconductor process equipment, including a process chamber, a radio frequency component, an air intake component, and an exhaust component, and the process chamber adopts the process chamber provided in the first aspect, Both the radio frequency component and the air intake component are arranged on the top of the chamber body, and the exhaust component is arranged on the bottom of the chamber body.
- the chamber body, the base body and the cantilever are made of the same material with electrical conductivity and thermal conductivity as an integrally formed structure, so that there is no gap between the cantilever and the chamber body , so that the electrical conductivity between the cantilever and the chamber body is better, thereby greatly improving the uniformity of the radio frequency circuit of the process chamber; in addition, it also improves the thermal conductivity of the chamber body to the cantilever, thereby greatly increasing the process chamber The overall temperature Uniformity, thereby greatly improving the yield of the wafer. Further, since the chamber body, the base body and the cantilever adopt an integral molding structure, this can not only improve the structural stability of the embodiment of the present application, but also greatly reduce application and maintenance costs.
- the semiconductor process equipment provided by the embodiment of the present application by using the above-mentioned process chamber provided by the embodiment of the present application, can greatly improve the uniformity of the radio frequency circuit and the overall temperature uniformity of the process chamber, thereby greatly improving the yield of the wafer;
- not only the structural stability of the embodiments of the present application can be improved, but also application and maintenance costs can be greatly reduced.
- FIG. 1 is a schematic three-dimensional structural diagram of a process chamber omitting a chuck assembly provided by an embodiment of the present application;
- FIG. 2 is a schematic three-dimensional structural diagram of a chuck assembly provided by an embodiment of the present application.
- FIG. 3 is a schematic cross-sectional view of a process chamber provided by an embodiment of the present application.
- FIG. 4 is a schematic top view of a process chamber according to an embodiment of the present application.
- the embodiment of the present application provides a process chamber, which is applied to semiconductor process equipment.
- the schematic structural diagrams of the process chamber are shown in FIGS. 1 and 3 , including: a chamber body 1 , a base 2 and a chuck assembly 3 ;
- a reaction chamber 11 is formed in the chamber body 1, the base 2 is located in the reaction chamber 11, and the chuck assembly 3 is connected to the base 2 for carrying wafers (not shown in the figure);
- the base 2 includes a base body 21 and a plurality of cantilevers 22, the plurality of cantilevers 22 are spaced and uniformly arranged along the circumference of the base body 21, and each cantilever 22 is respectively connected to the inner wall of the reaction chamber 11 and the outer wall of the base body 21, and the chamber body 1,
- the base body 21 and the cantilever 22 are integrally formed and made of materials with electrical and thermal conductivity.
- the chamber body 1 may specifically adopt a cubic structure made of metal material, and a hollow reaction chamber 11 is formed in the middle of the chamber body 1 for accommodating the base 2 and the chuck assembly 3 .
- the top of the chamber body 1 may be provided with a cover (not shown in the figure), and the air extraction port 12 at the bottom may be connected to an exhaust assembly (not shown in the figure) of the semiconductor process equipment, and the exhaust assembly
- the inside of the reaction chamber 11 can be pumped to make the reaction chamber 11 in a vacuum state, thereby providing a reaction environment for the wafer.
- the base 2 and the chamber body 1 adopt an integral molding structure, and the base 2 and the chamber body 1 are made of the same material and are made of materials with electrical and thermal conductivity, such as metal materials.
- the base body 21 is a cylindrical structure, and three cantilevers 22 are disposed on the outer periphery of the base body 21 .
- Both the seat body 21 and the chamber body 1 are made by integral molding, and two ends of each cantilever 22 are respectively connected to the inner wall of the chamber body 1 and the outer wall of the base body 21 .
- the overall structure of the chuck assembly 3 can be a disc-shaped structure, and the chuck assembly 3 is disposed on the top of the base body 21 for carrying and adsorbing wafers.
- the chamber body, the base body and the cantilever are made of the same material with electrical conductivity and thermal conductivity as an integrally formed structure, so that there is no gap between the cantilever and the chamber body , so that the electrical conductivity between the cantilever and the chamber body is better, thereby greatly improving the uniformity of the radio frequency circuit of the process chamber; in addition, it also improves the thermal conductivity of the chamber body to the cantilever, thereby greatly increasing the process chamber The overall temperature Uniformity, thereby greatly improving the yield of the wafer. Further, since the chamber body, the base body and the cantilever are integrally formed, this not only improves the structural stability of the embodiment of the present application, but also greatly reduces application and maintenance costs.
- the embodiments of the present application do not limit the specific implementation of the cantilever 22 and the chamber body 1 , for example, two or more cantilevers 22 may be used, and the chamber body 1 may also be a cylindrical structure. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings by themselves according to the actual situation.
- the base body 21 has an accommodating cavity 211 , and the accommodating cavity 211 has an upward opening; a plurality of cantilevers 22 are provided with accommodating cavities. 211 is connected to the installation channel 221, the chamber body 1 is provided with a through hole 13, the through hole 13 communicates the installation channel 221 with the outside of the chamber body 1; the chuck assembly 3 is sealed with the base body 21 for sealing The above-mentioned opening of the accommodating cavity 211 is accommodated.
- the base body 21 is specifically a cylindrical structure, so that an accommodating cavity 211 is formed in the base body 21 .
- Each cantilever 22 adopts, for example, a rectangular rod-shaped structure.
- the cantilever 22 is a hollow structure to form an installation channel 221 .
- the chamber body 1 is provided with a through hole 13 corresponding to the installation channel 221 in each cantilever 22 .
- the through hole 13 may adopt a rectangular structure, and the cross-sectional dimension of the through hole 13 is the same as that of the installation channel 221 in the cantilever 22 .
- the installation channel 221 can be used not only for arranging parts (not shown in the figure) such as cables, air pipes and water pipes connected inside and outside the chamber body 1, but also for installing some parts of suitable size, thereby greatly saving the external space of the chamber body 1 and the space occupied by the chamber body 1 .
- the mounting channel 221 has an upward opening 222 on the cantilever 22 , and the opening 222 communicates with the accommodating cavity 211 ; the chuck assembly 3 is also connected to a plurality of The cantilever 22 is sealed and connected to seal the above-mentioned opening 222 of the installation channel 221 .
- the chuck assembly 3 includes an interface plate 32 , and the interface plate 32 is sealed and disposed on the above-mentioned opening of the accommodating cavity 211 .
- the interface plate 32 of the chuck assembly 3 can be a disk-shaped structure made of metal material, and the interface plate 32 can be covered on the top of the base body 21 to seal the opening of the accommodating cavity 211 .
- the interface plate 32 and the base body 21 are connected in a detachable manner, thereby improving the disassembly and maintenance efficiency of the embodiment of the present application.
- both the base body 21 and the cantilever 22 adopt a hollow structure, the manufacturing cost of the embodiment of the present application can also be greatly reduced.
- the embodiment of the present application does not limit the specific shape of the cantilever 22 , for example, the cantilever 22 may also adopt a round rod-shaped structure. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings by themselves according to the actual situation.
- the interface disk 32 includes a disk main body 321 and a plurality of cover plates 322 connected thereto.
- the number of cover plates 322 is the same as that of the cantilever 22, and the plurality of cover plates 322 are spaced and evenly distributed around the disk main body 321, and each cover plate 322 corresponds to each
- the cantilever 22 is sealed and connected to seal the above-mentioned opening 222 of the installation channel 221 .
- the disk main body 321 and the plurality of cover plates 322 are integrally formed.
- the three cover plates 322 can be correspondingly covered on the three cantilevers 22 , so as to seal the above-mentioned openings 222 of the installation channels 221 of the three cantilevers 22 in a one-to-one correspondence. , so as to protect the components installed in the installation channel 221 of the cantilever 22 , so as to prevent the process chamber from causing corrosion to the components during the process, thereby greatly reducing the failure rate and improving the service life.
- the opening 222 can be used to maintain the components installed in the base body 21 and the cantilever 22 by disassembling the interface plate 32 , thereby greatly improving the disassembly and maintenance efficiency of the embodiment of the present application.
- the embodiment of the present application does not limit the specific number of the cover plates 322 , as long as the number of the cover plates 322 is set corresponding to the number of the cantilevers 22 . Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings by themselves according to the actual situation.
- the chuck assembly 3 includes an electrostatic chuck 31 .
- the electrostatic chuck 31 is disposed on the disk main body 321 and is used for carrying wafers.
- the electrostatic chuck 31 can specifically adopt a disc-shaped structure made of ceramic material.
- the top surface of the electrostatic chuck 31 can be used to carry wafers, and the bottom surface of the electrostatic chuck 31 is connected to the disk body 321 . Fitting settings.
- the disk main body 321 can be covered on the top of the base body 21 , and the disk main body 321 can be used to install the electrostatic chuck 31 and provide an interface for the electrodes and the back air of the electrostatic chuck 31 .
- the diameter of the disc body 321 can be larger than that of the electrostatic chuck 31 to facilitate connection with the electrostatic chuck 31 and the base body 21 , and the connection can be detachable, thereby improving the disassembly and maintenance efficiency of the embodiment of the present application.
- the embodiment of the present application does not limit the specific type of the chuck assembly 3 , and those skilled in the art can adjust the settings according to the actual situation.
- each positioning structure 4 is provided between each cover plate 322 and the corresponding cantilever 22 to limit the position of the cover plate 322 on the cantilever 22 .
- the positioning structure may have various structures.
- each positioning structure 4 includes at least a pair of mutually matched positioning recesses and positioning protrusions, and the positioning recesses are provided in the two surfaces of the cover plate 322 and the cantilever 22 opposite to each other.
- the positioning convex portion is disposed on the other of the two surfaces of the cover plate 322 and the cantilever 22 opposite to each other.
- the positioning convex portion is, for example, a positioning column 41 provided on the top surface of the cantilever 22
- the positioning recessed portion is, for example, a positioning hole (not shown in the figure) provided on the bottom surface of the cover plate 322 .
- the holes cooperate with the positioning posts 41 to define the position of the cover plate 322 on the cantilever 22 .
- the positioning structure 4 is used to position and install the interface plate 32 to the correct position. position.
- the embodiments of the present application are not limited to this.
- the positioning structure 4 may also adopt the manner of matching between bumps and grooves, and those skilled in the art can adjust the setting according to the actual situation.
- the outer peripheral surfaces of the three cover plates 322 may adopt a curved surface structure, and the diameter of the curved surface structure is smaller than the inner diameter of the reaction chamber 11, and the difference between the two is about 2 mm (millimeters), for example.
- Mechanical interference between the interface plate 32 and the inner wall of the reaction chamber 11 is avoided when the interface plate 32 is installed, thereby greatly improving the disassembly and maintenance efficiency of the embodiment of the present application, and also effectively reducing the failure rate of the embodiment of the present application.
- the top surface of the cantilever 22 close to the side wall of the reaction chamber 11 is a closed structure, that is, the opening 222 is far from the side of the accommodating chamber 211 and the reaction chamber 11 .
- There is a predetermined distance between the side walls and the predetermined distance may be 30 mm, and the wall thickness of the cantilever 22 may be set to about 20 mm.
- the positioning column 41 may be disposed near the side wall of the reaction chamber 11 for positioning the position of the interface tray 32 .
- the embodiments of the present application are not limited to the above, and those skilled in the art can adjust the settings by themselves according to the actual situation.
- the base body 21 includes a side wall 35 and a bottom cover 34 , wherein the bottom cover 34 is detachably disposed at the bottom of the side wall 35 , and the bottom cover 34
- the upper surface of the upper surface and the inner surface of the side wall 35 enclose the accommodating cavity 211;
- the chamber body 1 is provided with a maintenance port 14 at the position corresponding to the bottom cover 34, and the maintenance port 14 is communicated with the reaction chamber 11 and is used for For maintenance of the bottom cover 34.
- the bottom cover 34 is specifically a shell-like structure made of metal material.
- the surface encloses the accommodating cavity 211 .
- the bottom cover 34 is used to close the accommodating cavity 211, and various components can be installed in the accommodating cavity 211, such as a lift assembly (not shown in the figure), and the lift assembly can pass through the interface plate 32 and the electrostatic chuck 31 to be used for The wafer is driven to move up and down relative to the chuck assembly 3 , and the components in the accommodating cavity 211 can be easily maintained by removing the bottom cover 34 .
- the bottom cover 34 and the side wall 35 can be specifically connected by flanges and bolts.
- the bottom cover 34 and the side wall 35 may also be connected by means of screw connection or snap connection.
- the bottom cover 34 and the side wall 35 adopt a detachable structure, so as to facilitate the maintenance of the lifting assembly, thereby greatly improving the efficiency of disassembly and maintenance.
- the bottom cover 34 and the side wall 35 may adopt an integral molding structure, and the side wall 35 has openings for maintenance of various components. maintenance door structure. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the height setting by themselves according to the actual situation.
- a rectangular maintenance port 14 may be opened on the side of the chamber body 1 , the length of the maintenance port 14 is greater than the diameter of the bottom cover 34 , and the height of the maintenance port 14 is greater than the thickness of the bottom cover 34 , so as to facilitate the disassembly and maintenance of the bottom cover 34 , thereby greatly improving the disassembly and maintenance efficiency of the embodiment of the present application.
- the embodiment of the present application does not limit the specific position and shape of the maintenance port 14 , as long as the position of the maintenance port 14 corresponds to the position of the bottom cover 34 . Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings by themselves according to the actual situation.
- the diameter of the outer wall of the bottom cover 34 gradually decreases along the vertical direction away from the side wall 35 .
- the bottom cover 34 may have a conical conical structure with a large upper and a small lower, that is, the outer diameter of the bottom cover 34 gradually decreases in the direction from the top surface to the bottom surface.
- the bottom cover 34 is designed with a conical cone, which facilitates the flow of the gas in the chamber body 1 to the lower air inlet 12 , thereby reducing the stability of the gas flow in the reaction chamber 11 and improving the yield of wafers.
- the base 2 and the chamber body 1 are both made of aluminum alloy.
- the chamber body 1 , the base body 21 and the cantilever 22 can all be made of aluminum alloy material. Due to the one-piece molding structure, the electrical conductivity between the three is excellent, and there is almost no space between the cantilevers 22 . Difference, the equivalent current of the radio frequency circuit can flow to the chamber body 1 through the three cantilevers 22 evenly distributed in the circumferential direction and be grounded, thereby improving the uniformity of the radio frequency circuit.
- the number of cantilevers 22 can be three, the three cantilevers 22 are evenly arranged on the outer circumference of the base body 21, and the included angle between two adjacent cantilevers 22 is 120 degrees.
- the heat conduction between the chamber body 1 and the cantilever 22 is excellent, and the chamber body 1 is conducted to the base body 21 through the three evenly distributed cantilever arms 22, which can not only reduce the temperature difference between the chamber body 1 and the base body 21, but also improve the base body 21. Temperature uniformity at body 21 .
- the upper width of the plurality of cantilevers 22 on the cross section of the chamber body 1 may be 100-200 mm, but the embodiment of the present application is not limited to this. It is set according to the influence of the internal air flow state. Therefore, the specific specifications of the cantilever 22 are not limited in the embodiments of the present application, and those skilled in the art can adjust the settings according to the actual situation.
- an embodiment of the present application provides a semiconductor process equipment, including a process chamber, a radio frequency component, an air intake component, and an exhaust component, wherein the process chamber adopts the process chamber provided by the above embodiments,
- the radio frequency component and the air intake component are both arranged at the top of the chamber body, and the exhaust component is arranged at the bottom of the chamber body.
- the semiconductor process equipment provided by the embodiment of the present application by using the above-mentioned process chamber provided by the embodiment of the present application, can greatly improve the uniformity of the radio frequency circuit and the overall temperature uniformity of the process chamber, thereby greatly improving the yield of the wafer;
- not only the structural stability of the embodiments of the present application can be improved, but also application and maintenance costs can be greatly reduced.
- first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as “first” or “second” may expressly or implicitly include one or more of that feature. In the description of the present invention, unless otherwise specified, "plurality" means two or more.
- the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication of two elements.
- installed should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication of two elements.
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Abstract
Description
Claims (10)
- 一种工艺腔室,应用于半导体工艺设备,其特征在于,包括腔室本体、基座及卡盘组件;所述腔室本体内形成有反应腔,所述基座位于所述反应腔内,所述卡盘组件与所述基座连接,用于承载晶圆;所述基座包括基座本体和多个悬臂,多个所述悬臂沿所述基座本体的周向间隔且均匀设置,且每个所述悬臂分别连接所述腔室本体的内壁和所述基座本体的外壁;所述腔室本体、所述基座本体和所述悬臂为一体成型结构,且由具有导电性和导热性的材质制成。
- 如权利要求1所述的工艺腔室,其特征在于,所述基座本体内具有容置腔,所述容置腔具有朝上的敞口;多个所述悬臂内均设置有与所述容置腔连通的安装通道,所述腔室本体上开设有通孔,所述通孔将所述安装通道与所述腔室本体的外部连通;所述卡盘组件与所述基座本体密封连接,用以密封所述容置腔的所述敞口。
- 如权利要求2所述的工艺腔室,其特征在于,所述安装通道在所述悬臂上具有朝上的开口,所述开口与所述容置腔连通;所述卡盘组件还与多个所述悬臂密封连接,用以密封所述安装通道的所述开口。
- 如权利要求3所述的工艺腔室,其特征在于,所述卡盘组件包括接口盘,所述接口盘包括盘主体和与之连接的多个盖板,其中,所述盘主体与所述基座本体密封连接,用以密封所述容置腔的所述敞口;所述盖板的数量与所述悬臂的数量相同,且多个所述盖板间隔且均匀分布在所述盘主体的周围,各个所述盖板一一对应地与各个所述悬臂密封连接,用以密封所述安装通道的所述开口。
- 如权利要求3所述的工艺腔室,其特征在于,每个所述盖板和与之对应的所述悬臂之间设置有定位结构,用于限定所述盖板在所述悬臂上的位置。
- 如权利要求5所述的工艺腔室,其特征在于,每个所述定位结构均包括至少一对相互配合的定位凹部和定位凸部,所述定位凹部设置于所述盖板与所述悬臂彼此相对的两个表面中的一者上;所述定位凸部设置于所述盖板与所述悬臂彼此相对的两个表面中的另一者上。
- 如权利要求2所述的工艺腔室,其特征在于,所述基座本体包括侧壁和底盖,所述底盖可拆卸地设置于所述侧壁的底部,所述底盖的上表面和所述侧壁的内表面围成所述容置腔;所述腔室本体上,且与所述底盖相对应的位置处设有维护口,所述维护口与所述反应腔连通。
- 如权利要求7所述的工艺腔室,其特征在于,所述底盖的外壁的直径沿远离所述侧壁的竖直方向逐渐减小。
- 如权利要求7所述的工艺腔室,其特征在于,在所述侧壁和所述底盖的外表面上对应设置有两个连接法兰,两个所述连接法兰在竖直方向上相互叠置,并通过多个紧固件固定连接。
- 一种半导体工艺设备,包括工艺腔室、射频组件、进气组件和排气 组件,其特征在于,所述工艺腔室采用如权利要求1至9中任一项所述的工艺腔室,所述射频组件和所述进气组件均设置于所述腔室本体的顶部,所述排气组件设置于所述腔室本体的底部。
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Publication number | Priority date | Publication date | Assignee | Title |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040050327A1 (en) * | 2001-01-22 | 2004-03-18 | Tokyo Electron Limited | Vertically translatable chuck assembly and method for a plasma reactor system |
CN101740340A (zh) * | 2008-11-25 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室及半导体加工设备 |
CN103824745A (zh) * | 2012-11-19 | 2014-05-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种反应腔室 |
CN207398070U (zh) * | 2017-11-06 | 2018-05-22 | 德淮半导体有限公司 | 一种干法刻蚀装置 |
CN110306161A (zh) * | 2019-07-01 | 2019-10-08 | 北京北方华创微电子装备有限公司 | 半导体加工腔室及半导体加工设备 |
CN112509901A (zh) * | 2020-11-19 | 2021-03-16 | 北京北方华创微电子装备有限公司 | 工艺腔室及半导体工艺设备 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0126419D0 (en) * | 2001-11-03 | 2002-01-02 | Accentus Plc | Microwave plasma generator |
CN1797664A (zh) * | 2004-12-24 | 2006-07-05 | 中华映管股份有限公司 | 等离子显示器结构 |
JP5102615B2 (ja) * | 2005-04-04 | 2012-12-19 | パナソニック株式会社 | プラズマ処理方法及び装置 |
CN101351076B (zh) | 2008-09-16 | 2011-08-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理设备 |
CN203225233U (zh) * | 2009-09-10 | 2013-10-02 | 朗姆研究公司 | 一种陶瓷侧气体喷射器 |
CN102737934B (zh) * | 2011-04-06 | 2015-04-08 | 中微半导体设备(上海)有限公司 | 用于等离子体处理反应腔的射频屏蔽装置 |
CN104916564B (zh) * | 2014-03-13 | 2018-01-09 | 北京北方华创微电子装备有限公司 | 反应腔室以及等离子体加工设备 |
US9609730B2 (en) | 2014-11-12 | 2017-03-28 | Lam Research Corporation | Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas |
JP6491891B2 (ja) | 2015-01-23 | 2019-03-27 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
US10386828B2 (en) | 2015-12-17 | 2019-08-20 | Lam Research Corporation | Methods and apparatuses for etch profile matching by surface kinetic model optimization |
CN108987228B (zh) * | 2017-06-02 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 用于处理工件的等离子体反应装置 |
CN109994356B (zh) | 2017-12-29 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 反应腔室和半导体加工设备 |
CN108987237B (zh) * | 2018-08-01 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 反应腔室以及等离子体设备 |
CN209267924U (zh) * | 2018-09-17 | 2019-08-16 | 上海剑桥科技股份有限公司 | 集成有电磁屏蔽结构的散热器及散热器组件 |
JP7199200B2 (ja) * | 2018-11-01 | 2023-01-05 | 東京エレクトロン株式会社 | 基板載置台、基板処理装置及び基板処理方法 |
CN111341638B (zh) * | 2018-12-19 | 2023-08-01 | 夏泰鑫半导体(青岛)有限公司 | 工艺腔室及其清洁方法及晶圆传输方法 |
CN110010411B (zh) * | 2019-03-25 | 2020-10-30 | 深圳龙电华鑫控股集团股份有限公司 | 继电器固定结构 |
CN110349830B (zh) * | 2019-09-09 | 2020-02-14 | 北京北方华创微电子装备有限公司 | 等离子体***以及应用于等离子体***的过滤装置 |
CN210956591U (zh) * | 2019-09-16 | 2020-07-07 | 富芯微电子有限公司 | 一种具有复合栅结构的igbt芯片的加工设备 |
CN211045372U (zh) * | 2019-12-26 | 2020-07-17 | 北京北方华创微电子装备有限公司 | 工艺腔室及半导体设备 |
CN111041434B (zh) * | 2020-03-17 | 2020-06-19 | 上海陛通半导体能源科技股份有限公司 | 用于沉积绝缘膜的物理气相沉积设备 |
CN111403256B (zh) * | 2020-03-24 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 半导体工艺装置 |
-
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- 2021-11-17 WO PCT/CN2021/131205 patent/WO2022105794A1/zh active Application Filing
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040050327A1 (en) * | 2001-01-22 | 2004-03-18 | Tokyo Electron Limited | Vertically translatable chuck assembly and method for a plasma reactor system |
CN101740340A (zh) * | 2008-11-25 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室及半导体加工设备 |
CN103824745A (zh) * | 2012-11-19 | 2014-05-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种反应腔室 |
CN207398070U (zh) * | 2017-11-06 | 2018-05-22 | 德淮半导体有限公司 | 一种干法刻蚀装置 |
CN110306161A (zh) * | 2019-07-01 | 2019-10-08 | 北京北方华创微电子装备有限公司 | 半导体加工腔室及半导体加工设备 |
CN112509901A (zh) * | 2020-11-19 | 2021-03-16 | 北京北方华创微电子装备有限公司 | 工艺腔室及半导体工艺设备 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115692263A (zh) * | 2022-10-31 | 2023-02-03 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室及半导体工艺设备 |
CN115692263B (zh) * | 2022-10-31 | 2023-06-16 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室及半导体工艺设备 |
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