CN203225233U - 一种陶瓷侧气体喷射器 - Google Patents

一种陶瓷侧气体喷射器 Download PDF

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CN203225233U
CN203225233U CN2012206910670U CN201220691067U CN203225233U CN 203225233 U CN203225233 U CN 203225233U CN 2012206910670 U CN2012206910670 U CN 2012206910670U CN 201220691067 U CN201220691067 U CN 201220691067U CN 203225233 U CN203225233 U CN 203225233U
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chamber
gas ejector
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丹尼尔·阿瑟·布朗
杰夫·A·博加特
伊恩·J·肯沃西
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Lam Research Corp
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Abstract

一种陶瓷侧气体喷射器，该陶瓷侧气体喷射器配置成安装在8个对称排列的气体喷射器安装孔中的任何一个里，该安装孔位于能加工半导体衬底的等离子体反应室的室顶界面侧壁上，该侧气体喷射器由上游部分直径大于下游部分的阶梯式圆柱形陶瓷本体以及通过该陶瓷本体的轴端表面沿轴向延伸的直径均一的中心孔组成。

Description

一种陶瓷侧气体喷射器
本申请是申请号为201090000551.3、申请日为2010年9月10日、名称为“等离子体处理装置的可替换上室部件”的中国专利申请（PCT申请号为PCT/US2010/002473）的分案申请。 
本申请根据美国法典第35编第119条，要求2009年9月10日提交的申请号为61/241,321、题为“等离子体处理装置的可替换上室部件”的美国临时申请的优先权，该临时申请的全部内容作为参考并入本申请中。 
技术领域
本发明总体涉及半导体衬底制造技术，尤其涉及等离子体室上室部分的可替换部件，更尤其涉及陶瓷侧气体喷射器。 
背景技术
在衬底（例如半导体衬底或用于平板显示器制造的玻璃面板）的加工中，经常采用等离子体。例如，作为衬底加工的部分，该衬底被分割为多个模具或多个矩形区域，任意一个模具或矩形区域将变为集成电路。然后通过一系列选择性去除（蚀刻）和沉积（沉积）材料的步骤加工该衬底，以便在其上形成电器元件。 
在示例性的等离子体处理中，蚀刻前用硬化乳胶薄膜（即，如光刻胶掩膜）涂覆衬底。然后，选择性去除硬化乳胶区域，使得底层元件暴露。然后在等离子体处理室中将该衬底置于衬底支撑结构上，该衬底支撑结构包含单极或双极电极，称为卡盘或底座。 然后让适当的蚀刻剂源流入室内，激发以形成等离子体来蚀刻该衬底的暴露区域。 
现参见图1，所示为电感耦合等离子体处理***元件的简单示意图。一般来说，等离子体室（室）202由形成室侧壁的底室部分250、形成室侧壁的上室部分244以及顶部252组成。一组合适的气体从气体分配***222流入室202。这些等离子体处理气体随后可离子化形成等离子体220，以便加工（例如，蚀刻或沉积）位于静电卡盘（卡盘）216与边环215上的衬底224(如半导体衬底或玻璃面板)的暴露区域。气体分配***222通常由装有等离子体处理气体（例如C4F8、C4F6、CHF3、CH2F3、CF4、HBr、CH3F、C2F4、N2、O2、Ar、Xe、He、H2、NH3、SF6、BCl3、Cl2等）的压缩气筒（未显示）组成。 
感应圈231通过形成上室壁的介电窗口204与等离子体分隔开，通常在等离子体处理气体中诱发时变电流，从而产生等离子体220。所述窗口不仅保护感应圈免受等离子体220的影响，而且允许产生的射频磁场208在等离子体处理室内产生感应电流211。与感应圈231进一步耦合的匹配网络232，可进一步耦合到射频发生器234。匹配网络232试图将通常在约13.56兆赫以及约50欧姆运行的射频发生器234的阻抗与等离子体220的阻抗相匹配。另外，第二射频能量源238也可通过匹配网络236耦合到衬底224以便造成等离子体的偏压，并引导等离子体离开等离子体处理***内的位置（structure）而接近衬底。通过泵220去除室内气体和副产品。 
通常，某种类型的冷却***240耦合到卡盘216以便在等离子体被点燃后达到热平衡。该冷却***自身由通过该卡盘中的腔泵送冷却剂的冷却器以及在卡盘和衬底间泵送的氦气组成。除了去除所产生的热量，氦气也允许该冷却***迅速控制热量消散。即，增加氦气压力增大了传热速率。大多数等离子体处理***也由包含 操作软件程序的精密计算机控制。在典型的作业环境中，通常为特定的等离子体处理***和具体配方配置生产工艺参数（如电压、气流混合物、气体流速、压力等）。 
此外，加热和冷却装置246可运行以控制等离子体处理装置202上室部分244的温度，使得该运行时暴露于等离子体的上室部分244的内表面维持在控制温度。该加热和冷却装置246由一些不同材料层组成，以适应加热和冷却操作。 
该上室部分自身通常由耐等离子体材料构建，该材料接地或者对该等离子体处理***内产生的射频磁场透明（即，涂覆或未涂覆的铝、陶瓷等）。 
例如，上室部分可为铝加工件，可将其拆除以进行清洁或替换。上室部分的内表面优选用耐等离子体材料涂覆，如热喷涂氧化钇涂层。由于该类型的陶瓷涂层容易损坏，清洁很成问题，而且由于一些等离子体工艺处理的灵敏性，有时候更趋向替换上室部分而不是将其拆除以进行清洁。 
此外，维护后正确重安装上室部分通常很困难，因为它必须与室底部分恰当对齐，以便一套垫片恰当地密封上室部分周围。轻微的偏差将妨碍正确的安装布置。 
上室部分材料的容积也倾向向等离子体处理***增加可观的热质。热质是指能长期储存热能的材料。一般说来，等离子体工艺倾向于对温度变化非常敏感。例如，已建立的处理窗口外的温度变化可直接影响聚合物薄膜（如聚氟）在衬底表面的蚀刻率或沉积率。通常需要衬底间的温度有可重复性，因为许多等离子体处理配方也可能要求温度变化处于约零点几摄氏度的级别。鉴于此，上 室部分经常加热或冷却以便将该等离子体工艺大体上维持在已建立的参数内。 
随着等离子体的点燃，衬底吸收热能，随后测量该热能，然后通过冷却***去除。同样地，该上室部分可进行热控制。但是，等离子处理可要求在多步处理中的温度变化，也许有必要将上室部分加热到100℃以上的温度，例如120、130、140、150或160℃或其间的任何温度，然而在先的上室部分在较低温度约60℃运行。更高的温度可导致如室底部分的相邻元件不希望的温度升高。例如，如果预期在约130到150℃的温度运行上室部分和上置的介电窗口以及在约30℃的周围温度运行室底部分，热量可从更热的上室部分流入室底部分并充分升高其温度以影响半导体衬底经受的等离子体处理条件。因此，上室部分引起的热流变化可导致衬底温度变化超过精密的配方参数。 
鉴于上述情况，具有优化等离子体处理***中等离子体工艺的理想匹配特征的可替换上室部件将产生有益的效果。 
发明内容
一种陶瓷侧气体喷射器，其中该陶瓷侧气体喷射器配置成安装在8个对称排列的气体喷射器安装孔中的任何一个里，该安装孔位于能加工半导体衬底的等离子体反应室的室顶界面侧壁上，该侧气体喷射器由上游部分直径大于下游部分的阶梯式圆柱形陶瓷本体以及通过该陶瓷本体的轴端表面沿轴向延伸的直径均一的中心孔组成 
在优选的实施方式中，能加工半导体衬底的等离子体反应室，其上室部分的可替换室顶界面，包含单片金属圆筒，该单片金属圆筒具有直径一致的内表面，从该内表面水平延伸的上部真空 密封面以及从该内表面水平延伸的下部真空密封面；适于密封该等离子体室的介电窗口的上部环状真空密封面；适于密封该等离子体室的底部部分的下部环状真空密封面；该圆筒上部的热质，该热质由该圆筒的更宽部分限定在该内表面和沿着该上凸缘垂直延伸的外表面之间，该热质在让该内表面的方位温度均匀方面是有效的，以及该圆筒下部的、能有效减少通过下部真空密封面的热转移的热阻风门，该热阻风门由厚度小于0.25英寸且延伸达该内表面长度的至少25%的薄金属部分限定。 
在另一项实施方式中，加工半导体衬底的等离子体反应室的上室部分的可替换窗，包含厚度均一的陶瓷磁盘，至少一个配置成容纳温度监控传感器的盲孔，适用于密封室顶界面的上部真空密封面的真空密封面，以及配置成容纳输送处理气体进入该室中心的顶部气体喷射器的中心孔。 
在进一步的实施方式中，配置成供应气体到安装于室顶界面侧壁上的侧喷射器的气体输送***包含从共用供给器接收调谐气体的分岔气体管线，以及配置成将调谐气体从共用供给器等距离流入喷射器的气体管。该侧喷射器可包括围绕室顶界面对称排列的8个喷射器，该气体管线可包括八条气体管线，其中两条等长度的主要气体管线从该共用供给器延伸，两条等长度的第二气体管线从该主要气体管线出口延伸，四条等长度的第三气体管线从该第二气体管线出口延伸。该主要气体管线长于该第二气体管线，该第二气体管线长于该第三气体管线。该主要气体管线连于该第二气体管线的中点，该第二气体管线连于该第三气体管线的中点。设计该气体输送***以安装于室顶界面的外表面中环形槽限定的小容积内。 
附图说明
图1所示为等离子体处理***的简单示意图； 
图2所示为本文所述的包含窗口、室顶界面以及侧喷射器气体供应***的示例性等离子体室的透视图。 
图3A-D所示为本文所述的室顶界面的细节。 
图4A-H所示为本文所述的陶瓷窗口的细节。 
图5A-K所示为本文所述的侧气体喷射输送***的细节。 
图6A-B所示为安装于室顶界面侧壁上开口的通过侧气体喷射***供应气体的气体喷射器的细节。 
具体实施方式
现参考在附图中示出的数个优选实施例，详细描述本发明。在以下描述中，将阐明数个具体的细节以提供对本发明的透彻的理解。但是，明显地，对于本领域的技术人员而言，没有这些特定细节中的某些或全部，本发明也可实施。在另一些情形下，公知的处理步骤和/或结构未具体描述，以避免不必要地让本发明不显著。本文所用的术语“约”应阐释为包含所述值上或者下浮动达10%的值。 
本文述及了等离子体室的上室部分的可替换部件，如图2所示。该部件包括陶瓷窗口、室顶界面和侧气体喷射输送***。 
图2示出的等离子体***包括室10，该室10包括下部室12和上部室14。该上部室14包括支撑介电窗口16的室顶界面15。射频线圈18上置于该窗口，为室内激发工艺气体进入等离子体状态提供射频功率。顶部气体喷射器安装于窗口中心，用于从气体供应管线20输送工艺气体。 
图3A-D示出室顶界面15的细节。图3A是室顶界面15的顶视图，图3B是侧横截面视图，其图解了加厚壁部分15a、薄壁部分15b、上部真空密封面15c、下部真空密封面15d以及侧墙15f上的侧喷射口15e。图3C示出上部真空密封面15c的细节，其中阐明了该表面和O-环接口槽15g的不同尺寸。图3D是示出外墙15i中环形槽15h上的侧气体喷射器的位置的透视图。 
图4A示出窗口16的细节，该窗口16包括作为顶部喷射器接口的中心开口16a，上表面16c中作为温度传感器接口的盲孔16b，以及外侧面16f的底凸缘16e中的钟状（clocking）特征部分16d。图4B是图4A所示窗口的侧视图。图4C示出涂覆了如等离子体喷涂氧化钇的陶瓷涂层的槽面外面的真空密封面16g的细节。图4D是该窗外边缘的横截面，其中圆形槽16i延伸入侧壁16f。图4E示出盲孔16b之一的细节和尺寸。图4F示出钟状特征部分16d的细节和尺寸，该钟状特征部分16d是半径为0.625英寸，在单一位置延伸入窗口侧的槽，且该槽的边缘与半径中心形成90°夹角。图4G示出该窗口的细节和尺寸，图4H示出该窗口的横截面，图示了盲孔的相对深度。 
图5A示出该室的顶视图，其中圆柱室顶界面15位于上部室14的方形外壳中。图5B是图5A左上角的扩大图，图示了支撑室顶界面的支架装置。图5C图解了侧喷射气体供应***50，其包括共用气体供应供给器50a，两个等长度的主要气体管线50b，两个等长度的第二气体管线50c，四个等长度的第三气体管线50d，以及输送调谐气体到8个侧喷射器位置的八个连结50e。图5D示出气体喷射***50（其中调谐气体从共用供给器50a到每个侧喷射器等距离运送）如何安装在室顶界面15的外表面中环形槽限定的小容积内。图5E示出共用气体供给器50a以及两个终止于连结50f的主要气体管线50b的细节。图5F示出通过气体连结50g（其连结于气体连结50f）分岔的第二气体管线50c之一以及通过连于第二 气体管线50c末端的气体连结50h分岔的两个第三气体管线50d的细节。图5G示出安装于室顶界面15侧壁中的侧气体喷射器50i的细节。图5H示出主要气体管线50b如何安装在室顶界面15的侧壁中环形槽内的细节。图5I示出该气体喷射***如何输送气体到侧喷射器50i之一的细节。图5J示出侧气体喷射器50i，图5K示出安装在侧气体喷射器50i的面和室顶界面15的侧喷射器口15e反面之间的垫圈50j。 
在一项优选的实施方式中，室顶界面是具有安装过程支持硬件（射频输入线圈、温度控制窗口、对齐特征部分、室温度控制硬件、侧气体喷射器、气体输送管道等）、密封真空和从部件中导出电流的特征的硬阳极化铝圆筒。真空密封优选为在圆筒顶部和底部的一个或更多O-环。导电的建立优先考虑通过使用装入圆筒上凹槽内并接触相邻元件上的裸金属条的金属弹簧射频垫圈。增加该圆筒的上部分重量和热质以达到预期的温度均匀。内部等离子体暴露表面可涂覆如等离子体喷涂氧化钇的陶瓷材料。 
图6A示出该八个侧气体喷射器50i之一的近端的端视图，图6B示出沿图6A中A-A线所取的该喷射器50i的横截面。该喷射器50i包括具有均一（uniform）直径为0.038至0.042英寸（优选0.040英寸）的中心孔61的喷射器本体60，该中心孔61通过喷射器本体60的近端和远端表面轴向延伸。该喷射器本体60总长0.52至0.53英寸，优选0.526英寸，在上游部分62的外直径为0.2至0.3英寸，优选0.25英寸，该在上游部分62延伸0.275至0.285英寸，优选0.278英寸，以及在下游部分63的外直径为0.12至0.13英寸，优选0.125英寸，该下游部分63的长度为0.245至0.250英寸，优选为0.248英寸。中心孔的高宽比至少为10，优选13至14。该孔的这个高宽比可控制进入喷射器的反扩散以预防不锈钢气体供给器管线的腐蚀。下游端63的远端64包括45°（±10°）的凹槽，其形成0.005至0.015英寸，优选0.01英寸宽的环面65。下游 部分63的外表面与垂直于上游部分和下游部分的外表面并在上游部分和下游部分的外表面之间延伸的表面67之间的角66是圆狐形的，半径为0.005至0.015英寸，优选0.001英寸。该面67支持图5K所示垫圈50j。上游部分62的近端表面68支持环绕如图5I所示的连结50e的出口的另一垫圈。如图5I所示，喷射器50i的远端突出侧壁。喷射器50i的远端延伸优选0.05至0.2英寸，更优选约为0.1英寸入室。 
根据一项优选的实施方式，该窗口是中部有与陶瓷气体喷射器相连的孔的陶瓷磁盘。其还具有约0.008英寸的凸出衬垫（landing pad），其从与室顶界面相连的底部外径（outer diameter,OD）的外边缘延伸出0.5英寸。窗口和室顶界面之间的界面上有O-环密封圈。该陶瓷磁盘约1英寸厚，其由如氧化铝这样的低损耗正切高纯度陶瓷材料制成并用氧化钇涂覆在底部槽面上以抵抗等离子体。该盘上表面有两个盲孔，用来容纳热电偶（TC）和电阻温度检测器（RTD）。选择TC和RTD的位置和深度，实现预期的加工温度检测，避免损坏窗口。TC和RTD孔的底部有球形半径以降低孔的应力集中。 
室顶界面和窗口的接触面积确定这两个元件之间热交换的量。在等离子体处理过程中，窗口中部是热的，需要该接触区域导热到窗口边缘以助于该底部外径的温度接近中部温度。闲置时（室内不产生等离子体时），窗口中部是冷的，需要该接触区域不导任何热到窗口，以匹配窗口中部的温度。 
通过确定窗口的中性轴（零应力线，其为分割拉伸和压缩应力的线）所在位置并保持孔底部在该轴之上来设定TC和RTD的深度。该分析还可以确定测量点和目的点有什么温度差异。用软件进行分析时需考虑此差异。 
还可分析TC和RTD的位置以确定需要在软件中考虑多少偏差。该窗口应力与窗口中部和窗口OD间的温度差异相关。由于顶部气体喷射器的存在，窗口中部的温度无法测量，因此，此分析可能涉及窗口中部温度和测量点的温度。 
如果孔底部不具有球形半径，窗口在孔所在处有高应力集中。因为窗口内部受室内真空压力，如果孔底部非圆形，那么存在一个从窗口中央到边缘的热梯度可使窗口断裂。在孔底部增加球形半径消除了尖锐边缘，从而降低了应力和断裂的可能性。 
陶瓷窗口可替换、维修、养护，易于生产。窗口优选厚约1英寸，直径约22英寸。TC和RTD的孔的预期尺寸为钇涂覆表面以下0.494±0.009英寸，该孔是以窗口中部为圆心，半径约为5.6英寸的半圆。该孔总深度约0.5英寸，45°锥形的孔入口16b具有0.390英寸的直径。孔底部直径约为0.130英寸。 
侧喷射***可输送调谐气体，该***设计为可去除、可维护、可养护、可生产、防漏、耐等离子体、可对称供给8个口的气体喷射***。其可在20℃-120℃的温度范围内运行，以及使用1/4不锈钢管道和特别定制的低收缩真空密封界面。侧气体喷射***的几乎所有表面都安装在0.750英寸宽1.612英寸高的矩形截面形状内，同时，几乎所有表面都不超过22.5英寸的直径。 
侧气体喷射***的功能是均匀提供调谐气体进入等离子体。侧气体喷射***的流速和流动均匀性是8个侧气体喷射器的内孔直径的主要功能，其由固体氧化钇，气体输送管道的总容积，以及从单一气体供给器位置到所有喷射器位置的对称路径构成。该气体喷射***的尺寸可为：每个固体氧化钇喷射器的内孔直径：0.040±0.002英寸，VCR配件（共用供给器50a的上游末端的气体配件） 的气体喷射***的容积：2.922立方英寸，到VCR配件的每个喷射器的气体运送路径长度：37.426英寸。 
真空安装界面比例如K1S配件更小，氧化钇侧气体喷射器作为唯一直接暴露于等离子体的***部分，可减小尺寸，耗损时可替换，而不用替换贵得多的不锈钢焊接件。 
室顶界面是阳极化陶瓷涂覆的铝圆筒，该铝圆筒在顶部和底部具有O-环密封圈，以及与陶瓷窗口配对的顶部接触表面。主动加热室顶并维持在一定温度以重复加工晶片。 
窗口边缘的温度主要由室顶界面控制。该室界面主要控制多少热进入或逸出窗口边缘。因此为了保持边缘闲置时是冷的、晶片加工时是热的，需要闲置时或加工时保持小的温度梯度，以便提供通过界面的最佳热流。闲置时过多热流将导致边缘过热和窗口断裂。晶片加工时过少热流将导致边缘过冷，引起断裂。主要控制热流通过界面的界面特征是空中室与窗口的接触表面区域。空中接触区域是指从O-环槽外径到该室的外径，窗口和室的接触区域。这些尺寸可以通过分析和测试闲置时和晶片加工时的热流进行优化。 
此外，该界面的平面度是热传递的关键，必须维持。多种预期尺寸规格包括O-环槽外径
Figure DEST_PATH_GDA00003305895100111
英寸，室接触区域外径
Figure DEST_PATH_GDA00003305895100112
英寸，室接触区域平面度0.002英寸。 
通过披露示例性实施方式和最佳模式，对该披露的实施方式存在的更改和变化均落入所附权利要求所限定的本发明主旨和实质范围内。 

Claims (8)

1.一种陶瓷侧气体喷射器，其中该陶瓷侧气体喷射器配置成安装在8个对称排列的气体喷射器安装孔中的任何一个里，该安装孔位于能加工半导体衬底的等离子体反应室的室顶界面侧壁上，该侧气体喷射器由上游部分直径大于下游部分的阶梯式圆柱形陶瓷本体以及通过该陶瓷本体的轴端表面沿轴向延伸的直径均一的中心孔组成。 
2.根据权利要求1所述的气体喷射器，其中该中心孔直径为0.038至0.042英寸，长度为0.52至0.53英寸。 
3.根据权利要求1所述的气体喷射器，其中该陶瓷本体完全由氧化钇组成。 
4.根据权利要求1所述的气体喷射器，其中调节该上游部分尺寸以安装在孔的较宽部分内，调节该下游部分尺寸以安装在室顶界面侧壁的等离子体暴露表面的开口内，以便该喷射器远端突出该等离子体暴露表面0.05至0.2英寸。 
5.根据权利要求1所述的气体喷射器，其中该陶瓷本体包括该上游部分的轴端表面的第一垫圈啮合面和在该上游部分和该下游部分间垂直延伸的第二垫圈啮合面。 
6.根据权利要求1所述的气体喷射器，其中该中心孔的高宽比为13至14。 
7.根据权利要求1所述的气体喷射器，其中所述陶瓷本体长度为0.52至0.53英寸，该上游部分直径为0.2至0.3英寸，该下游部分直径为0.12至0.13英寸。 
8.根据权利要求1所述的气体喷射器，其中该上游部分长度为0.27至0.28英寸，该下游部分长度为0.24至0.25英寸。 
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