WO2022080168A1 - 受光装置および電子機器 - Google Patents
受光装置および電子機器 Download PDFInfo
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- WO2022080168A1 WO2022080168A1 PCT/JP2021/036639 JP2021036639W WO2022080168A1 WO 2022080168 A1 WO2022080168 A1 WO 2022080168A1 JP 2021036639 W JP2021036639 W JP 2021036639W WO 2022080168 A1 WO2022080168 A1 WO 2022080168A1
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- H01L27/144—Devices controlled by radiation
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Definitions
- the present disclosure relates to a light receiving device and an electronic device, and particularly to a light receiving device and an electronic device capable of obtaining better image quality.
- an image recognition system using a thin (for example, a total length of 1 mm or less) light receiving device that does not use an image sensor has been developed by using a large number of microlenses of the same size as the unit pixel of the image sensor. Has been done.
- Patent Document 1 discloses a configuration in which two pinhole arrays are provided between a microlens array and a sensor array.
- Patent Document 2 discloses a configuration in which one pinhole array is provided between the microlens array and the sensor array. Then, the optical axis of the microlens located in the center of the plurality of microlenses becomes perpendicular to the photosensitive surface of the sensor, and the optical axis of the microlens is at the end from the center with respect to the photosensitive surface of the corresponding sensor.
- the image recognition system is configured with an arbitrary angle of view by being positioned so as to be gradually tilted toward the portion.
- This disclosure has been made in view of such a situation, and is intended to enable better image quality to be obtained.
- the light receiving device on one aspect of the present disclosure includes a semiconductor substrate in which a first photodetector and a second photodetector are arranged in at least substantially the same light receiving surface, and a first optical system for incidenting light on the first photodetector. , And an optical member provided with at least a second optical system for incident light on the second photodetector, and light is imaged on the first photodetector via the first optical system.
- the main light rays on the object side are directed in different directions between the pixel 1 and the second pixel in which light is formed on the second photodetector via the second optical system.
- the electronic device of one aspect of the present disclosure includes a semiconductor substrate in which a first photodetector and a second photodetector are arranged in at least substantially the same light receiving surface, and a first optical system for incidenting light on the first photodetector. , And an optical member provided with at least a second optical system for incident light on the second photodetector, and light is imaged on the first photodetector via the first optical system.
- a light receiving device is provided in which the main light ray on the object side is directed in a different direction between the pixel 1 and the second pixel in which light is formed on the second photodetector via the second optical system.
- light is imaged on a first pixel through which light is imaged on a first photodetector via a first optical system and on a second photodetector via a second optical system.
- the main light rays on the object side are directed in different directions from the second pixel.
- FIG. 1 is a diagram showing a configuration example of a first embodiment of an authentication device to which the present technology is applied.
- the authentication device 11 shown in FIG. 1 is, for example, a light receiving device used for fingerprint authentication, and also includes vein authentication, iris authentication, solution authentication, lensless microscope, cell separation device, glass inspection device, semiconductor inspection device, and contact. It can also be used for a type copying machine or the like.
- the authentication device 11 has a configuration in which a cover glass 12, an optical member 13, and a semiconductor substrate 14 are laminated in order from the object side, and a plurality of pixels 21 are arranged in a matrix.
- the authentication device 11 is configured with an optical system so that the main ray (optical axis represented by the alternate long and short dash line) on the object side faces different directions for each pixel 21.
- FIG. 1 shows a cross-sectional structure of an authentication device 11 in a configuration example in which 13 pixels 21-1 to 21-13 are arranged in a column direction or a row direction.
- the cover glass 12 is made of, for example, a transparent member having a d-line refractive index of 1.15 and a thickness of 45 ⁇ m, and protects the surface of the authentication device 11.
- the optical member 13 has a structure in which the space between the cover glass 12 and the semiconductor substrate 14 is filled with a transparent material (see FIG. 2 described later) which is a medium other than air, and has a refracting surface 22, a microlens group 23, and a light-shielding portion. It constitutes an optical system consisting of 24.
- the refracting surface 22 is configured by providing an inclined surface having a predetermined inclination angle (see FIG. 3 to be described later) for each pixel 21 in order to refract the main light ray incident on the optical member 13 for each pixel 21.
- the microlens group 23 is provided with a lens body (see FIG. 2 to be described later) for each pixel 21 for condensing the light refracted by the refracting surface 22 for each pixel 21 and forming an image with the photodetector 25 of the semiconductor substrate 14. Is composed of.
- the light-shielding unit 24 has a predetermined diameter (see FIG. 6 to be described later) for passing the light collected by the microlens group 23 for each pixel 21 and blocking light other than the light collected in each pixel 21.
- a pinhole is provided for each pixel 21.
- optics such as a bandpass filter may be located above or below the layer of the transparent body such as glass constituting the optical member 13, between the microlenses constituting the microlens group 23, or in the vicinity of the microlenses.
- the configuration may be such that the members are arranged.
- the semiconductor substrate 14 is provided with a photodetector 25 for each pixel 21, and constitutes a sensor light receiving surface that receives light refracted and condensed by the optical member 13 for each pixel 21.
- a solid-state image sensor such as a CCD (Charge Coupled Device) image sensor or a CMOS (Complementary Metal Oxide Semiconductor) image sensor can be used for the semiconductor substrate 14.
- the authentication device 11 configured in this way has higher light utilization efficiency and is better by using the microlens group 23 having the same size as the pixel 21 of the semiconductor substrate 14 without using the image pickup lens. High image quality can be obtained. Further, by adopting the authentication device 11, for example, it is possible to provide an image recognition system having a very thin optical length of 1 mm or less and a very thin image recognition system.
- FIG. 2 is a diagram showing a cross-sectional configuration example of the optical member 13.
- the optical member 13 is configured by laminating a transparent body 31, a transparent body 32, a lens body 33, a transparent body 34, a lens body 35, and a transparent body 36 in order from the object side.
- the transparent body 31 is formed of a transparent member having a d-line refractive index of 1.55 and a thickness of 5 ⁇ m
- the transparent body 32 is formed of a transparent member having a d-line refractive index of 1.9 and a thickness of 5 ⁇ m. Then, the boundary surface between the transparent body 31 and the transparent body 32 constitutes the refracting surface 22, and the main light ray incident on the optical member 13 can be refracted by the difference in refractive index in the inclined surface 41 formed on the boundary surface. ..
- the lens body 33 is formed of a lens material having a d-line refractive index of 1.9 and a thickness of 2.2 ⁇ m
- the transparent body 34 is formed of a transparent member having a d-line refractive index of 1.48 and a thickness of 3 ⁇ m
- the lens body 33 is formed by d-line refraction. It is formed of a lens material having a rate of 1.9 and a thickness of 1 ⁇ m.
- the lens body 33 is formed to have a curvature of -15 ⁇ m
- the lens body 35 is formed to have a curvature of 15 ⁇ m, whereby the microlens group 23 is configured.
- each pixel 21 has, for example, a transparent body 36 so as to have an optical axis perpendicular to the sensor light receiving surface of the semiconductor substrate 14 at least between the photodetector 25 and immediately before the microlens group 23.
- the optical axis inside is configured to be orthogonal to the light receiving surface of the sensor.
- the transparent body 36 is formed of a transparent member having a d-line refractive index of 1.55 and a thickness of 70 ⁇ m, and a light-shielding portion 24 is provided inside the transparent body 36.
- the light-shielding portion 24 is arranged near the focal position where the light is focused by the microlens group 23.
- the total length of the optical system is 61.2 ⁇ m.
- the sensor light receiving surface of the semiconductor substrate 14 is provided several ⁇ m away from the light shielding portion 24, and the semiconductor layer (epi layer) having a thickness of several ⁇ m is provided from the sensor light receiving surface to the photodetector 25. Therefore, the total length of the optical system is a little over 70 ⁇ m.
- the angle of view of the authentication device 11 will be described with reference to FIG.
- the refraction surface 22 is provided with inclined surfaces 41-1 to 41-13.
- the inclined surfaces 41-1 to 41-3 are formed at an inclined angle of -41.0 °.
- the inclined surface 41-4 is formed at an inclined angle of -34.5 °.
- the inclined surface 41-5 is formed at an inclined angle of -25.5 °.
- the inclined surface 41-6 is formed at an inclined angle of -12.75 °.
- the inclined surface 41-7 is formed at an inclination angle of 0 °.
- the inclined surface 41-8 is formed at an inclined angle of 12.75 °.
- the inclined surface 41-9 is formed at an inclined angle of 25.5 °.
- the inclined surface 41-10 is formed at an inclined angle of 34.5 °.
- the inclined surfaces 41-11 to 41-13 are formed at an inclined angle of 41.0 °.
- the central axes of the lens portions 42-3 to 42-11 have pixels 21-3 to 21-11. It is located at a position that coincides with the optical axis.
- the central axis of the lens portion 42-13 is eccentric with respect to the optical axis of the pixel 21-13 toward the outside (lower side in FIG.
- the authentication device 11 appropriately sets the tilt angle of the tilted surfaces 41-1 to 41-13 and the arrangement (eccentricity) of the central axis of the lens portions 42-1 to 42-13 to obtain pixels.
- An optical system can be configured such that each 21 has a different angle of view (the angle of the main ray is changed).
- pixel 21-1 has an angle of view of -31.3 °.
- Pixel 21-2 has an angle of view of -25.1 °.
- Pixel 21-3 has an angle of view of -19.8 °.
- Pixel 21-4 has an angle of view of -14.8 °.
- Pixels 21-5 have an angle of view of ⁇ 9.9 °.
- Pixels 21-6 have an angle of view of -4.6 °.
- Pixels 21-7 have an angle of view of 0 °.
- Pixels 21-8 have an angle of view of 4.6 °.
- Pixels 21-9 have an angle of view of 9.9 °.
- Pixels 21-10 have an angle of view of 14.8 °.
- Pixel 21-11 has an angle of view of 19.8 °.
- Pixels 21-12 have an angle of view of 25.1 °.
- Pixels 21-13 have an angle of view of 31.3 °.
- FIG. 4 shows a conceptual diagram showing the direction of the main light beam on the object side when the authentication device 11 is viewed in a plan view.
- Each rectangle represented by the alternate long and short dash line in FIG. 4 represents the pixels 21 arranged in a matrix on the sensor light receiving surface of the authentication device 11.
- the pixels 21 are arranged in a 13 ⁇ 13 matrix. Then, starting from the center of each pixel 21, an arrow pointing outward in the plane direction of the authentication device 11 indicates the direction of the main ray on the object side.
- the authentication device 11 is configured with an optical system so that the main ray on the object side of each pixel 21 faces outward from the central pixel 21 of the authentication device 11.
- the authentication device 11 of the configuration example in which 13 pixels 21 are arranged in the column direction or the row direction has been described, but in the authentication device 11, a larger number of pixels 21 are arranged. It may be configured as a new type. That is, the authentication device 11 can be configured such that an arbitrary number of pixels 21 are arranged.
- FIG. 5 is for explaining an optical system in which each pixel 21 forms an image on one point of a certain object and functions as an image pickup device as a whole of the authentication device 11 so that an image pickup lens does not need to be used. It is a figure.
- the Kepler optical system shown in FIG. 5 is a transparent body having a d-line refractive index of 1.55 and a thickness of 50 ⁇ m, and a lens material having a d-line refractive index of 1.9 and a thickness of 5 ⁇ m.
- FIG. 5 there are two types of light rays, an upper ray and a lower ray centered on a ray having a main ray of 0 ° as an on-axis ray, and an upper ray and a lower ray centered on a ray having a main ray of 4.7 ° as an off-axis ray. It is illustrated.
- the on-axis rays and the off-axis rays are imaged at a distance of 0.61 ⁇ m on the light receiving surface, whereas the image is formed at a location near the center on the drawing at a distance of 2.31 ⁇ m.
- the authentication device 11 of the present embodiment has an axis so that one pixel 21 detects only one point of light on the object side as narrow as possible and has a configuration that does not require the use of an image pickup lens. It is necessary to block external light. Therefore, by adopting a structure in which, for example, a pinhole having a diameter of 1 ⁇ m is used to block light at the place where the light beam is formed, it is possible to block off-axis light rays after passing all the on-axis light rays.
- the on-axis ray and the off-axis ray are separated by only 0.61 ⁇ m, and as shown in the figure, most of the on-axis ray and the off-axis ray pass through the same place. Even if a structure that shields light from light is adopted, only a slight separation effect can be obtained.
- the authentication device 11 is configured to use a solid-state image sensor such as a CCD image sensor or a CMOS image sensor, recombination from the light-shielding means to the image plane becomes unnecessary. Therefore, by arranging the photodetector 25 immediately after the light-shielding means such as a pinhole, it becomes possible to manufacture the photodetector 25 with the same structure as the CMOS image sensor mass-produced in recent years, and it is possible to further reduce the cost.
- a solid-state image sensor such as a CCD image sensor or a CMOS image sensor
- the Kepler optical system as shown in FIG. 5 is used. It was necessary.
- a photodetector is placed immediately after the pinhole placed at the first narrowed position (near the center in Fig. 5). By doing so, the same effect as this Kepler optical system can be obtained.
- the pinhole of the light-shielding portion 24 is arranged at the position where the light is focused by the microlens group 23, and immediately after that, the photodetector 25 of the semiconductor substrate 14 is placed.
- Adopt a structure to arrange.
- each pixel 21 preferably satisfies will be described.
- the angle ⁇ between the upper ray and the lower ray in the pixels 21-7 arranged at the center of the authentication device 11 satisfies the condition of the following equation (1).
- ⁇ is the angle in the focusing direction
- + ⁇ is the angle in the diverging direction.
- the authentication device 11 has an image pickup function without an image pickup lens so that one pixel 21 senses only one point of light on the object side as narrow as possible. Therefore, when the upper and lower rays are opened and diverged, the light cannot be connected to one point on the object side, and information is mixed between the adjacent pixels 21. In order to avoid such a situation. , The upper limit of the angle ⁇ between the upper ray and the lower ray is determined. On the other hand, in the authentication device 11, an application in which an object is imaged in a very close distance can be considered. At this time, the vertical light angle at the time of condensing is a negative angle.
- the ray angle with an F value of 2.0 will not be exceeded.
- the lower limit of the angle ⁇ with the lower light ray is determined.
- the focal length fg of the microlens group 23 satisfies the condition of the following equation (2).
- the lower limit of the focal length fg is determined by the fact that the limit of the fine structure of the pixel 21 is about 0.6 ⁇ m pitch.
- the upper limit of the focal length fg defines the internal structure of the authentication device 11, and is determined to distinguish it from a device such as a microscope or a telescope, for example.
- the diameter dm of the pinhole provided in the light-shielding portion 24 arranged near the focal position of the microlens group 23 satisfies the condition of the following formula (3).
- the basic principle of the authentication device 11 is to arrange a light-shielding portion 24 provided with a pinhole at a place where the light is focused by the microlens group 23, and select a light beam passing through each pinhole. Therefore, there is an applicable range in the diameter dm of the pinhole.
- the lower limit of the diameter dm of the pinhole is determined to be 0.1 ⁇ m through which visible light passes because it is assumed that visible light or more is used at a wavelength.
- the upper limit of the diameter dm of the pinhole is determined to be 2 ⁇ m required to select the light to be passed.
- the shape of the pinhole is not limited to a circle, and for example, a shape such as a rectangle having the diameter as the length of one side may be used.
- the authentication device 11 of the present embodiment by appropriately adopting the first to third conditions as described above, it is possible to realize performance suitable for each device.
- FIG. 7 is a diagram showing a configuration example of a second embodiment of the authentication device to which the present technology is applied.
- the same reference numerals are given to the configurations common to the authentication device 11 in FIG. 1, and detailed description thereof will be omitted.
- the authentication device 11A is configured by laminating a cover glass 12, an optical member 13A, and a semiconductor substrate 14 in order from the object side.
- the cover glass 12 and the semiconductor substrate 14 have the same configuration as the authentication device 11 of FIG.
- the optical member 13A has a configuration in which the refracting surface 22 and the light-shielding portion 24 are common to the authentication device 11 in FIG. 1, but the microlens group 23A has a different configuration. That is, the microlens group 23 in FIG. 1 has a configuration in which the lens body 33 and the lens body 35 are combined as described with reference to FIG. 2 described above.
- the microlens group 23A is configured to be one lens body and is an optical system that collects light in the same manner as the combination of the lens body 33 and the lens body 35.
- the authentication device 11A configured in this way can obtain better image quality as in the authentication device 11 of FIG.
- FIG. 8 is a diagram showing a configuration example of a third embodiment of the authentication device to which the present technology is applied.
- the same reference numerals are given to the configurations common to the authentication device 11 of FIG. 1, and detailed description thereof will be omitted.
- the authentication device 11B is configured by laminating the optical member 13B and the semiconductor substrate 14 in order from the object side.
- the semiconductor substrate 14 has the same configuration as the authentication device 11 of FIG.
- the authentication device 11B has a structure in which the cover glass 12 of FIG. 1 is not provided, and has a structure in which light is directly incident on the refraction surface 22B of the optical member 13B. Therefore, the authentication device 11B is configured so that the light incident on the optical member 13B is refracted by the difference in the refractive index between the air and the refractive index 22B.
- the authentication device 11B configured in this way can obtain better image quality as in the authentication device 11 of FIG.
- FIG. 9 is a diagram showing a configuration example of a fourth embodiment of the authentication device to which the present technology is applied.
- the same reference numerals are given to the configurations common to the authentication device 11 in FIG. 1, and detailed description thereof will be omitted.
- the authentication device 11C is configured by laminating a concave lens 51, an optical member 13C, and a semiconductor substrate 14 in order from the object side.
- the semiconductor substrate 14 has the same configuration as the authentication device 11 of FIG. In FIG. 9B, seven main rays refracted by the concave lens 51 are exemplified.
- the authentication device 11B shown in FIG. 8 has a configuration that extends from the air incident to the refracting surface 22B that directly refracts the main light beam, whereas the authentication device 11C has a continuous concave surface in its role.
- the configuration is realized by the concave lens 51.
- the optical member 13C is provided with a microlens group 23 and a light-shielding portion 24 for each pixel 21C, similarly to the optical member 13 in FIG.
- the authentication device 11C may have a structure in which 400 ⁇ 533 pixels 21C are provided in an area having a length ⁇ width of 2.4 mm ⁇ 3.2 mm and a maximum radius of 2 mm, for example. can.
- the authentication device 11C may have a configuration in which, for example, a concave lens 51 made of a transparent body having a concave surface having a radius of curvature of 4.1 mm is arranged on the pixels 21C.
- the authentication device 11C can be provided with an image pickup function of 213,000 pixels at a maximum total angle of view of 40 °, and better image quality can be obtained as in the authentication device 11 of FIG. Can be done.
- the authentication device 11C may employ a Fresnel lens or a hologram element having the same function instead of the concave lens 51 having the function as the refraction surface 22.
- FIG. 10A shows a cross-sectional view and a plan view of the Fresnel lens 52 that refracts light in the same manner as the concave lens 51.
- FIG. 10B shows a cross-sectional view and a plan view of the hologram element 53 that refracts light in the same manner as the concave lens 51.
- Frenel lens 52 and the hologram element 53 for example, it is composed of a cylinder, a quadrangular prism, a cylinder, a part of a cylinder, etc., and functions as a refracting surface 22 by bending light by a wave optical effect.
- An provided element (so-called metal lens) may be adopted.
- FIG. 11 is a diagram showing a configuration example of a fifth embodiment of the authentication device to which the present technology is applied.
- the same reference numerals are given to the configurations common to the authentication device 11 of FIG. 1, and detailed description thereof will be omitted.
- the authentication device 11D is configured by laminating a double-sided concave lens 54, an optical member 13D, and a semiconductor substrate 14 in order from the object side.
- the semiconductor substrate 14 has the same configuration as the authentication device 11 of FIG.
- the concave surface on the object side is formed on a spherical surface having a radius of curvature of -9 mm
- the concave surface on the image side is formed on a radius of curvature of 4.25 mm
- the central thickness of the lens is 0.33 mm.
- An air layer having an interval of 0.71 mm is provided between the double-sided concave lens 54 and the optical member 13D.
- the authentication device 11D may be configured to have 400 ⁇ 533 pixels 21D, as in the authentication device 11C of FIG. 9, or may be provided with an arbitrary number of pixels 21D.
- the authentication device 11D having such a configuration can obtain better image quality as in the authentication device 11 of FIG.
- FIG. 12 shows an example of using the authentication device 11 as a fingerprint authentication system.
- the fingerprint authentication system shown in FIG. 12 includes an authentication device 11, a personal computer 61, and a display 62.
- the fingerprint image acquired by the authentication device 11 is image-processed by the personal computer 61 to perform authentication, and the authentication result is displayed on the display 62.
- FIG. 13 shows an example of using the authentication device 11 as a face recognition and iris recognition system.
- the face recognition and iris recognition system shown in FIG. 13 is composed of an authentication device 11, a personal computer 61, and a display 62.
- the images of the face and the iris acquired by the authentication device 11 are image-processed by the personal computer 61 to perform authentication, and the authentication result is displayed on the display 62.
- FIG. 14 shows a first configuration example of the light-shielding portion 24.
- the light-shielding portion 24 is configured to be provided with a light-shielding wall 71 that shields light from adjacent pixels 21 and a light-shielding surface 72 on which a pinhole is formed for each pixel 21. Further, the light-shielding portion 24 has a shape such that the light-shielding wall 71 extends from the light-shielding surface 72 toward the object side.
- the light-shielding portion 24 can be formed of a metal having a light-shielding property such as tungsten, and can avoid mixing of light incident on the other pixels 21.
- FIG. 16 shows a second configuration example of the light-shielding portion 24.
- the second light-shielding surface 73 having an opening corresponding to the pinhole formed in the light-shielding surface 72 is closer to the microlens group 23 than the light-shielding wall 71. It is configured to be arranged on the light-shielding wall 71. For example, in the second light-shielding surface 73, light incident along the optical axis of each pixel 21 passes through the opening, while light incident from an oblique direction and reflected by the light-shielding wall 71 is shielded. It is provided as follows. This makes it possible to avoid deterioration of image quality due to stray light as shown in FIG.
- the light-shielding portion 24A (or the light-shielding portion 24 as well) can be provided with a fine structure for reducing the reflectance of the surface thereof.
- a cylindrical microstructure having a height of 0.29 ⁇ m and a diameter of 0.175 ⁇ m is formed on the surfaces of the light-shielding wall 71, the light-shielding surface 72, and the second light-shielding surface 73 constituting the light-shielding portion 24A. It is preferable to arrange them in a cycle with a pitch of 0.35 ⁇ m.
- Such a microstructure can be created, for example, by etching the surface of tungsten. This can reduce the reflectance, typically about 50%, on the surface of tungsten to about 2%.
- the authentication device 11C can image the fingertips arranged through the cover glass in the image pickup area portion as shown in the figure.
- the authentication device 11C is configured such that light is incident on the microlens group 23 of each pixel 21 at a specific oblique incidence according to the pixel position. Light can be refracted even if the power of the concave lens 51 is weak. As a result, the authentication device 11C can have a wider angle and can expand the image pickup area.
- the pixel position of the pixel 21a is the center of the authentication device 11C
- the pixels 21b, the pixel 21c, and the pixel 21d are arranged from the center toward the outer periphery
- the pixel position of the pixel 21e is the most of the authentication device 11C. It is near the outer circumference.
- a configuration using a Fresnel lens 52 as shown in A of FIG. 10 may be adopted instead of the concave lens 51.
- the authentication device 11 By adopting the authentication device 11 as described above, it is possible to provide an image recognition system having a total length of 1 mm or less and having high utilization efficiency of the light and photodetector 25 in a configuration that does not use an image pickup lens.
- the authentication device 11 can have an extremely long depth of focus (for example, 0.01 mm to ⁇ ), and can perform close-up / close-up photography that was not possible in the past.
- the authentication device 11 does not change the focus due to vibration. Further, the authentication device 11 does not fluctuate due to temperature characteristics.
- the authentication device 11 can be manufactured only by the semiconductor process, the manufacturing cost of the image recognition system can be reduced.
- the image recognition system that employs the authentication device 11 can obtain an image of an object placed on the cover glass 12, and can also recognize an object in a space away from the cover glass 12. This makes it possible to provide, for example, fingerprint authentication, iris authentication, finger vein authentication, and face authentication in a single image recognition system.
- the authentication device 11 can provide an imaging system that does not generate chromatic aberration. For example, even if a system that simultaneously detects visible light and IR light is configured, it is possible to avoid a focus difference between the two. ..
- the authentication device 11 can configure a system for detecting IR light that cannot be used with a lens used in a normal image pickup lens at a lower cost.
- the authentication device 11 can be widely used as a lensless microscope, and can be applied to, for example, cell selection, virus discrimination, and the like.
- the photodetector 25 is formed on the semiconductor substrate 14 for each pixel 21.
- the optical member 13 made of, for example, a plastic mold or a glass mold is attached to the sensor light receiving surface of the semiconductor substrate 14.
- the cover glass 12 is attached to the surface of the optical member 13.
- the authentication device 11 can be manufactured by individually producing the semiconductor substrate 14, the optical member 13, and the cover glass 12 and laminating them.
- the optical member 13 is formed by individually forming and laminating a transparent body 31, a transparent body 32, a lens body 33, a transparent body 34, a lens body 35, and a transparent body 36 as shown in FIG. Can be created.
- the optical member 13 may be created by repeating resist formation and etching treatment so that they are laminated.
- a 0.4 ⁇ m SiO 2 layer 81 to be a hologram element 53 is formed on the surface of the optical member 13C formed from the transparent body 36 to the lens body 33.
- the photoresist 82 is applied to the SiO 2 layer 81 to prepare the mask 83.
- the mask 83 is formed with holes corresponding to the shape of the first stage of the hologram element 53.
- the mask 83 is removed, and the photoresist 82 at a location corresponding to the hole formed in the mask 83 is removed.
- etching is performed on the SiO2 layer 81 to form a recess which is the first stage of the hologram element 53.
- the photoresist 82 is peeled off and washed.
- the photoresist 84 is applied so as to be embedded in the recess formed in the fourth step, and the mask 85 is created.
- the mask 85 is formed with holes corresponding to the shape of the second stage of the hologram element 53.
- the mask 85 is removed, and the photoresist 84 at a location corresponding to the hole formed in the mask 85 is removed.
- etching is performed on the SiO2 layer 81 to form a recess as the second stage of the hologram element 53.
- the photoresist 84 is peeled off and washed.
- the photoresist 86 is applied so as to be embedded in the recesses formed in the fourth and eighth steps, and the mask 87 is prepared.
- the mask 87 is formed with holes corresponding to the shape of the third stage of the hologram element 53.
- the hologram element 53 having a desired number of stages (4 stages in the example shown in FIG. 21) is manufactured.
- the authentication device 11 as described above is applied to various electronic devices such as an imaging system such as a digital still camera or a digital video camera, a mobile phone having an imaging function, or another device having an imaging function. Can be done.
- an imaging system such as a digital still camera or a digital video camera
- a mobile phone having an imaging function or another device having an imaging function. Can be done.
- FIG. 22 is a block diagram showing a configuration example of an image pickup device mounted on an electronic device.
- the image pickup device 101 includes an optical system 102, an image pickup element 103, a signal processing circuit 104, a monitor 105, and a memory 106.
- the optical system 102 is configured to have one or a plurality of lenses, and guides the image light (incident light) from the subject to the image pickup element 103 to form an image on the light receiving surface (sensor unit) of the image pickup element 103.
- the above-mentioned authentication device 11 is applied. Electrons are accumulated in the image pickup device 103 for a certain period of time according to the image formed on the light receiving surface via the optical system 102. Then, a signal corresponding to the electrons stored in the image pickup device 103 is supplied to the signal processing circuit 104.
- the signal processing circuit 104 performs various signal processing on the pixel signal output from the image pickup device 103.
- the image (image data) obtained by performing signal processing by the signal processing circuit 104 is supplied to the monitor 105 and displayed, or supplied to the memory 106 and stored (recorded).
- FIG. 23 is a diagram showing a usage example using the above-mentioned image sensor (authentication device 11).
- the above-mentioned image sensor can be used in various cases of sensing light such as visible light, infrared light, ultraviolet light, and X-ray, as described below.
- Devices that take images for viewing such as digital cameras and portable devices with camera functions.
- Devices used for traffic such as in-vehicle sensors that take pictures of the rear, surroundings, and inside of vehicles, surveillance cameras that monitor traveling vehicles and roads, and distance measurement sensors that measure distance between vehicles.
- Devices used in home appliances such as TVs, refrigerators, and air conditioners to take pictures and operate the equipment according to the gestures ⁇ Endoscopes, devices that take blood vessels by receiving infrared light, etc.
- Equipment used for medical and healthcare ⁇ Equipment used for security such as surveillance cameras for crime prevention and cameras for person authentication ⁇ Skin measuring instruments for taking pictures of the skin and taking pictures of the scalp Equipment used for beauty such as microscopes ⁇ Equipment used for sports such as action cameras and wearable cameras for sports applications ⁇ Camera for monitoring the condition of fields and crops, etc. , Equipment used for agriculture
- the present technology can also have the following configurations.
- a semiconductor substrate in which the first photodetector and the second photodetector are arranged in at least substantially the same light receiving surface It comprises a first optical system for incident light on the first photodetector and an optical member provided with at least a second optical system for incident light on the second photodetector.
- the optical members are arranged in order from the object side.
- a refracting surface provided with an inclined surface having a predetermined inclination angle for each pixel, and A group of microlenses that form an image of light for each photodetector,
- the light receiving device according to (1) above which is arranged in the vicinity of the focal position of the microlens group and has a light shielding portion that allows only the light focused for each pixel to pass through.
- the refraction surface is composed of a boundary surface between transparent bodies having a predetermined refractive index.
- the light receiving device according to (2) above wherein the light incident on the optical member is refracted by the difference in the refractive index between the transparent bodies by setting the inclination angle of the inclined surface for each pixel.
- the microlens group is composed of a lens unit provided for each pixel.
- the pixel has an optical axis perpendicular to the light receiving surface from the photodetector to the microlens group.
- the light receiving device according to any one of (1) to (5) above, further comprising a cover glass arranged on the object side with respect to the optical member.
- the light receiving device according to (6) above which has a structure in which the cover glass to the semiconductor substrate are filled with a transparent body which is a medium other than air.
- the angle ⁇ between the upper ray and the lower ray in the pixel arranged at the center of the light receiving surface satisfies the condition of the following equation (1).
- the focal length fg of the microlens group satisfies the condition of the following equation (2).
- the diameter of the pinhole provided in the light-shielding portion satisfies the condition of the following formula (3).
- (11) The light-receiving device according to (10) above, wherein the light-shielding portion has a light-shielding surface on which the pinhole is formed and a light-shielding wall that partitions adjacent pixels.
- (12) The light-receiving device according to (11) above, wherein the light-shielding portion has a second light-shielding surface having an opening formed corresponding to the pinhole on the microlens group side of the light-shielding surface.
- a semiconductor substrate in which the first photodetector and the second photodetector are arranged in at least substantially the same light receiving surface It comprises a first optical system for incident light on the first photodetector and an optical member provided with at least a second optical system for incident light on the second photodetector.
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Abstract
Description
図1は、本技術を適用した認証デバイスの第1の実施の形態の構成例を示す図である。
図5および図6を参照して、認証デバイス11の光学系の原理について説明する。
図7は、本技術を適用した認証デバイスの第2の実施の形態の構成例を示す図である。なお、図7に示す認証デバイス11Aにおいて、図1の認証デバイス11と共通する構成については同一の符号を付し、その詳細な説明は省略する。
図8は、本技術を適用した認証デバイスの第3の実施の形態の構成例を示す図である。なお、図8に示す認証デバイス11Bにおいて、図1の認証デバイス11と共通する構成については同一の符号を付し、その詳細な説明は省略する。
図9は、本技術を適用した認証デバイスの第4の実施の形態の構成例を示す図である。なお、図9に示す認証デバイス11Cにおいて、図1の認証デバイス11と共通する構成については同一の符号を付し、その詳細な説明は省略する。
図11は、本技術を適用した認証デバイスの第5の実施の形態の構成例を示す図である。なお、図11に示す認証デバイス11Dにおいて、図1の認証デバイス11と共通する構成については同一の符号を付し、その詳細な説明は省略する。
図12および図13を参照して、認証デバイス11の使用例について説明する。
図14乃至図18を参照して、遮光部24の構成例について説明する。
図19を参照して、上述の図9に示した認証デバイス11Cを指紋センサに適用した構成例について説明する。
図20を参照して、認証デバイス11の製造方法について説明する。
図21を参照して、上述の図10のBに示したホログラム素子53の製造方法について説明する。
上述したような認証デバイス11は、例えば、デジタルスチルカメラやデジタルビデオカメラなどの撮像システム、撮像機能を備えた携帯電話機、または、撮像機能を備えた他の機器といった各種の電子機器に適用することができる。
図23は、上述のイメージセンサ(認証デバイス11)を使用する使用例を示す図である。
・自動停止等の安全運転や、運転者の状態の認識等のために、自動車の前方や後方、周囲、車内等を撮影する車載用センサ、走行車両や道路を監視する監視カメラ、車両間等の測距を行う測距センサ等の、交通の用に供される装置
・ユーザのジェスチャを撮影して、そのジェスチャに従った機器操作を行うために、TVや、冷蔵庫、エアーコンディショナ等の家電に供される装置
・内視鏡や、赤外光の受光による血管撮影を行う装置等の、医療やヘルスケアの用に供される装置
・防犯用途の監視カメラや、人物認証用途のカメラ等の、セキュリティの用に供される装置
・肌を撮影する肌測定器や、頭皮を撮影するマイクロスコープ等の、美容の用に供される装置
・スポーツ用途等向けのアクションカメラやウェアラブルカメラ等の、スポーツの用に供される装置
・畑や作物の状態を監視するためのカメラ等の、農業の用に供される装置
なお、本技術は以下のような構成も取ることができる。
(1)
第1のフォトディテクタおよび第2のフォトディテクタが少なくとも略同一の受光面内に配列された半導体基板と、
前記第1のフォトディテクタに光を入射させる第1の光学系、および、前記第2のフォトディテクタに光を入射させる第2の光学系が少なくとも設けられた光学部材と
を備え、
前記第1の光学系を介して前記第1のフォトディテクタに光が結像する第1の画素と、前記第2の光学系を介して前記第2のフォトディテクタに光が結像する第2の画素とで、物体側の主光線が異なる方向を向く
受光装置。
(2)
前記光学部材は、物体側から順に、
前記画素ごとに所定の傾斜角度の傾斜面が設けられた屈折面と、
前記フォトディテクタごとに光を結像させるマイクロレンズ群と、
前記マイクロレンズ群の焦点位置の近傍に配置され、前記画素ごとに集光された光のみを通過させる遮光部と
を有する
上記(1)に記載の受光装置。
(3)
前記屈折面は、所定の屈折率の透明体どうしの境界面によって構成され、
前記傾斜面の傾斜角度を前記画素ごとに設定することにより、前記光学部材に入射した光は、前記透明体どうしの屈折率差によって屈折される
上記(2)に記載の受光装置。
(4)
前記マイクロレンズ群は、前記画素ごとに設けられるレンズ部によって構成され、
前記画素は、前記フォトディテクタから前記マイクロレンズ群まで前記受光面に対して垂直方向となる光軸を有しており、
所定の前記画素の前記レンズ部の中心軸を、前記画素の光軸に対して偏心した位置に配置することにより、前記光学部材に入射した光の主光線の角度が変更される
上記(2)または(3)に記載の受光装置。
(5)
前記屈折面として、凹レンズ、フレネルレンズ、またはホログラム素子が採用される
上記(2)から(4)までのいずれかに記載の受光装置。
(6)
前記光学部材に対して物体側に配置されたカバーガラス
をさらに備える上記(1)から(5)までのいずれかに記載の受光装置。
(7)
前記カバーガラスから前記半導体基板までが空気以外の媒質である透明体で埋められる構造である
上記(6)に記載の受光装置。
(8)
前記受光面の中心に配置される前記画素における上光線と下光線との角度θが、次の式(1)の条件を満たす
(9)
前記マイクロレンズ群の焦点距離fgが、次の式(2)の条件を満たす
(10)
前記遮光部に設けられるピンホールの直径が、次の式(3)の条件を満たす
(11)
前記遮光部は、前記ピンホールが形成される遮光面、および、隣接する前記画素どうしを仕切る遮光壁を有する
上記(10)に記載の受光装置。
(12)
前記遮光部は、前記遮光面よりも前記マイクロレンズ群側に、前記ピンホールに対応して開口部が形成された第2の遮光面を有する
上記(11)に記載の受光装置。
(13)
前記遮光部の表面に、反射防止となる微細構造が設けられる
上記(2)から(12)までのいずれかに記載の受光装置。
(14)
第1のフォトディテクタおよび第2のフォトディテクタが少なくとも略同一の受光面内に配列された半導体基板と、
前記第1のフォトディテクタに光を入射させる第1の光学系、および、前記第2のフォトディテクタに光を入射させる第2の光学系が少なくとも設けられた光学部材と
を備え、
前記第1の光学系を介して前記第1のフォトディテクタに光が結像する第1の画素と、前記第2の光学系を介して前記第2のフォトディテクタに光が結像する第2の画素とで、物体側の主光線が異なる方向を向く
受光装置を備える電子機器。
Claims (14)
- 第1のフォトディテクタおよび第2のフォトディテクタが少なくとも略同一の受光面内に配列された半導体基板と、
前記第1のフォトディテクタに光を入射させる第1の光学系、および、前記第2のフォトディテクタに光を入射させる第2の光学系が少なくとも設けられた光学部材と
を備え、
前記第1の光学系を介して前記第1のフォトディテクタに光が結像する第1の画素と、前記第2の光学系を介して前記第2のフォトディテクタに光が結像する第2の画素とで、物体側の主光線が異なる方向を向く
受光装置。 - 前記光学部材は、物体側から順に、
前記画素ごとに所定の傾斜角度の傾斜面が設けられた屈折面と、
前記フォトディテクタごとに光を結像させるマイクロレンズ群と、
前記マイクロレンズ群の焦点位置の近傍に配置され、前記画素ごとに集光された光のみを通過させる遮光部と
を有する
請求項1に記載の受光装置。 - 前記屈折面は、所定の屈折率の透明体どうしの境界面によって構成され、
前記傾斜面の傾斜角度を前記画素ごとに設定することにより、前記光学部材に入射した光は、前記透明体どうしの屈折率差によって屈折される
請求項2に記載の受光装置。 - 前記マイクロレンズ群は、前記画素ごとに設けられるレンズ部によって構成され、
前記画素は、前記フォトディテクタから前記マイクロレンズ群まで前記受光面に対して垂直方向となる光軸を有しており、
所定の前記画素の前記レンズ部の中心軸を、前記画素の光軸に対して偏心した位置に配置することにより、前記光学部材に入射した光の主光線の角度が変更される
請求項2に記載の受光装置。 - 前記屈折面として、凹レンズ、フレネルレンズ、またはホログラム素子が採用される
請求項2に記載の受光装置。 - 前記光学部材に対して物体側に配置されたカバーガラス
をさらに備える請求項1に記載の受光装置。 - 前記カバーガラスから前記半導体基板までが空気以外の媒質である透明体で埋められる構造である
請求項6に記載の受光装置。 - 前記遮光部は、前記ピンホールが形成される遮光面、および、隣接する前記画素どうしを仕切る遮光壁を有する
請求項10に記載の受光装置。 - 前記遮光部は、前記遮光面よりも前記マイクロレンズ群側に、前記ピンホールに対応して開口部が形成された第2の遮光面を有する
請求項11に記載の受光装置。 - 前記遮光部の表面に、反射防止となる微細構造が設けられる
請求項2に記載の受光装置。 - 第1のフォトディテクタおよび第2のフォトディテクタが少なくとも略同一の受光面内に配列された半導体基板と、
前記第1のフォトディテクタに光を入射させる第1の光学系、および、前記第2のフォトディテクタに光を入射させる第2の光学系が少なくとも設けられた光学部材と
を備え、
前記第1の光学系を介して前記第1のフォトディテクタに光が結像する第1の画素と、前記第2の光学系を介して前記第2のフォトディテクタに光が結像する第2の画素とで、物体側の主光線が異なる方向を向く
受光装置を備える電子機器。
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