WO2022079757A1 - 光学素子、撮像素子及び撮像装置 - Google Patents
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1809—Diffraction gratings with pitch less than or comparable to the wavelength
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
- G02B5/1819—Plural gratings positioned on the same surface, e.g. array of gratings
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/14627—Microlenses
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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Definitions
- FIG. 5 and 6 are diagrams showing an example of a schematic configuration of a structure.
- FIG. 5 shows an example of a side view of the structure 70.
- FIG. 6 shows an example of a plan view (top view) of the structure 70.
- the structure 70 is a columnar structure having a rectangular columnar shape, and is formed on the base 70a.
- the base 70a is, for example, a quartz substrate.
- the structure 70 has a refractive index different from that of the other portion, more specifically the portion between the structures 70.
- the structure 70 may have a higher refractive index than the refractive index of the other portion.
- Examples of the material of the structure 70 are SiN, TiO 2 , and the like.
- FIG. 11 shows an example of the phase distribution of the optical element 6 for concentrating the incident light on the PD 41 and PD 42.
- This phase distribution is a phase distribution that combines the phase distribution inside the quadrangle in FIG. 9 and the phase distribution outside the quadrangle in FIG.
- FIGS. 12 to 14 are diagrams showing an example of the amount of light guided to the PD (detected light amount).
- the wavelength of light is 520 nm.
- the amount of light is the average amount of light of both polarizations (for example, polarization in the X-axis direction and polarization in the Y-axis direction). This point is the same in FIGS. 15 to 17, which will be described later.
- the horizontal axis of the graph of FIG. 12 is the ratio of the arranged area of the structure 71 (the size of the area 61) to the arranged area of the plurality of structures 71 and the plurality of structures 72 (the size of the area 61 and the area 62). Is shown.
- FIG. 13 shows an example of the light collection distribution when the ratio of the arranged areas of the plurality of structures 71 is 0.32.
- the amount of focused light on the PD 41 is smaller than the amount of focused light on the PD 42.
- FIG. 14 shows an example of the light collection distribution when the ratio of the arranged areas of the plurality of structures 71 is 0.08.
- the amount of focused light on the PD 41 is even smaller than the amount of focused light on the PD 42. From these facts, it can be seen that the light collection to PD41 and PD42 can be controlled by the arrangement area of the plurality of structures 71.
- the lens function by the above-mentioned optical element 6 may be designed for each corresponding color of PD41 and PD42.
- the optical element 6 is designed for each color, and as will be described next with reference to FIGS. 15 to 17, the wavelength range used for each pixel (in the case of FIG. 15 as an example, the broken line marked B). It is possible to realize a lens function with small wavelength dependence in the enclosed wavelength band).
- FIGS. 15 to 17 are diagrams showing the wavelength dependence of the light amount ratio of the light guided to each PD (condensed light amount ratio in this example).
- FIG. 15 shows an example of the amount of light focused on the PD 41 and PD 42 by the transparent layer 60 designed to be compatible with blue (B).
- the design range including the center wavelength of 450 nm is indicated by the broken line. No large wavelength dependence is observed around the design wavelength, and it can be seen that it is easy to design a pixel corresponding to blue.
- FIG. 16 shows an example of the amount of light focused on the PD 41 and PD 42 by the transparent layer 60 designed to be compatible with green (G).
- the design range including the center wavelength of 520 nm is indicated by the broken line. No large wavelength dependence is seen around the design wavelength, and it can be seen that it is easy to design pixels corresponding to green.
- the optical element 6 functions as a lens that collects incident light on the PD 41 and PD 42. Further referring to FIGS. 2 and 3, since the region 61 that collects the incident light on the PD 41 is smaller than the region 62 that collects the incident light on the PD 42, the amount of the condensed light on the PD 41 reaches the PD 42. It is smaller than the amount of condensed light of. Therefore, PD41 is less likely to saturate than PD42. In such a pixel 2, for example, by using PD41 as a low-sensitivity photodiode and PD42 as a high-sensitivity photodiode, the dynamic range can be improved. Since the ratio of the amount of condensed light to the entire PD to the incident light is close to 100%, high light utilization efficiency can be realized.
- the signal processing control unit 13 may control the exposure of PD41 and PD42 so that the exposure periods of PD41 and PD42 are different.
- a transistor or the like for controlling the photoelectric conversion operation (charge reset, storage, etc.) of the PD 41 and PD 42 may be individually and controllably provided for each PD 41 and PD 42.
- the signal processing control unit 13 exposes the PD 41 and the PD 42 in different exposure periods by driving the transistors and the like at different timings.
- the signal processing control unit 13 may control the exposure of PD41 and PD42 so that the exposure period of at least one of PD41 and PD42 is longer than a predetermined period.
- the signal processing control unit 13 may control the exposure of PD41 and PD42 so that the exposure period of PD41 is longer than the exposure period of PD42. By suppressing the exposure period of the PD 42 to avoid saturation, for example, the occurrence of overexposure can be suppressed.
- the lens of the optical element may be designed based on the phase distribution symmetrical from the center position of the lens. This will be described with reference to FIGS. 18 to 21.
- FIGS. 18 to 20 are diagrams showing an example of a lens design of an optical element.
- FIG. 21 is a diagram showing an example of a schematic configuration of an image pickup device.
- FIG. 18 shows an example of the phase distribution of the optical element for condensing the incident light on the PD 41.
- the phase distribution shown in FIG. 19 is the phase distribution of the optical element for condensing the incident light on the PD 42.
- This phase distribution is a symmetric phase distribution in which the phase changes are repeated from the center position of the circularly spreading distribution toward both sides.
- the phase change repeated toward the left side (the negative direction side of the X-axis) ends in the middle, and after that, a phase distribution for condensing the incident light appears on the PD of the adjacent pixel.
- phase distribution in the region 62A When the phase distribution in the region 62A is not considered, that is, the phase distribution in the region of the region 61A has symmetry except for the phase distribution in the region 62A and the position symmetric thereof. Since the method of designing the transparent layer that follows the phase distribution has been described above, the description will not be repeated here.
- the region 61 (plurality of structures 71) is defined as a rectangular shape portion (inside the quadrangle) and the region 62 (plurality of structures 72) is defined as another portion in the transparent layer 60 will be described. bottom.
- the region 61 and the region 62 may be defined in various other shapes.
- 22 to 26 are diagrams showing an example of the arrangement area of the structure.
- the shape of each structure is not shown, and only the arrangement area of the structure is schematically shown.
- the region 61B is defined as a circular shape portion, and the region 62B is defined as the remaining portion.
- the area 61B corresponds to the area 61 or the area 61A described above.
- the area 62B corresponds to the area 62 or the area 62A described above.
- the region 61C is defined as a rectangular ring-shaped portion in the center and a rectangular ring-shaped portion including the rectangular ring-shaped portion while being separated from the central portion, and the region 62 is defined as the remaining portion.
- the region 61C corresponds to the region 61 or the region 61A described above.
- the region 62C corresponds to the region 62 or the region 62A described above.
- the region 61D is defined as a central circular shape portion and a circular ring-shaped portion including the central circular shape portion while being separated from the central circular shape portion, and the region 62D is defined as the remaining portion.
- the region 61D corresponds to the region 61 or the region 61A described above.
- the area 62D corresponds to the area 62 or the area 62A described above.
- the regions 61F are defined as four fan-shaped portions arranged at intervals in the rotational direction (at 90 ° intervals in this example), and the regions 62F are the remaining portions. It is decided.
- the area 61F corresponds to the area 61 or the area 61A described above.
- the area 62F corresponds to the area 62 or the area 62A described above.
- two types of areas may be arranged in various shapes (not shown). From the viewpoint of the continuity of the phase distribution, a shape having few boundaries between the two types of regions may be adopted.
- each pixel 2 includes two PD41s and PD42s having different amounts of condensed light.
- each pixel may have three, four, or a larger number of PDs having different amounts of condensed light.
- the optical element includes a plurality of structures arranged in different arrangement areas according to the amount of condensed light to each PD. For example, when four PDs are used, in the transparent layer 60, a plurality of first to fourth structures are arranged in a region divided into four so as to have different areas.
- the PD may be arranged one-dimensionally or two-dimensionally.
- the plurality of structures 70 may be provided in the transparent layer 60.
- the plurality of structures 70 may be provided on the lower surface of the transparent substrate.
- the transparent layer 60 is an air layer.
- the portion corresponding to the plurality of structures 70 becomes a plurality of recesses, and a plurality of voids in the plurality of recesses are formed. It is also realized by having a higher refractive index than the material constituting the recess.
- the voids of the plurality of recesses are filled with a fluid having a higher refractive index than the material constituting the plurality of recesses, and the plurality of recesses are formed.
- the constituent material being a metamaterial having a refractive index lower than 1.
- the plurality of structures 71 may not be arranged in the area 61.
- the region 61 directly guides the incident light to the PD 41.
- Such a region 61 may be filled with the material of the transparent layer 60.
- the region 61 overlaps the PD 41 so as to be located inside the PD 41 when viewed in a plan view, even if there is no light collection function by the plurality of structures 71, The light incident on the region 61 is guided to the PD 41.
- polyimide such as fluorinated polyimide, BCB (benzocyclobutene), photocurable resin, UV epoxy resin, acrylic resin such as PMMA, polymer such as resist in general, etc. Etc. are mentioned as materials.
- the transparent layer 60 may be a transparent layer having a laminated structure made of a plurality of materials. Further, the transparent layer 60 may be made of the same material as the color filter, for example, an organic material such as a resin, as long as the loss is sufficiently low for the wavelength to reach the corresponding PD. good. In this case, the transparent layer 60 is not only made of the same material as the color filter, but also has the same structure as the color filter, and is designed to have absorption characteristics according to the wavelength of light to be guided to each PD. You may.
- each of the structures 70 having different refractive indexes may be made of materials having different refractive indexes.
- Each of the plurality of structures 70 has a width W and / or a refractive index that provides an optical phase delay amount distribution for guiding the light incident on the region 61 to the PD 41 and guiding the light incident on the region 62 to the PD 42. good.
- the optical phase delay amount distribution may be an optical phase delay amount distribution for condensing light.
- the optical element 6 can have a lens function, and incident light can be guided (for example, condensed) to PD41 and PD42. Further, the optical element 6 can be manufactured more easily than, for example, when a plurality of structures having different heights are provided.
- PD41 and PD42 may have the same size when viewed in a plan view.
- the PDs can be arranged without gaps as compared with the case of using PDs of different sizes, and therefore the light utilization efficiency can be improved.
- the image pickup device 12 may include a filter layer 5 provided between the pixel 2 and the optical element 6. Thereby, for example, the light of the color corresponding to the pixel 2 can be guided to the PD 41 and the PD 42.
- the image pickup apparatus 10 described with reference to FIG. 1 and the like is also an aspect of the present disclosure. That is, the image pickup device 10 includes an image pickup element 12 and a signal processing control unit 13 that generates an image signal based on an electric signal obtained from the image pickup element 12. As a result, the image pickup apparatus 10 capable of achieving both improvement of the dynamic range and improvement of the light utilization efficiency can be obtained.
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Abstract
Description
平面視したときのPD41及びPD42のサイズ:3.2μm×3.2μm
焦点距離:4.8μm
設計波長:520nm
レンズパターンの面積比:0.08(8%)
なお、レンズパターンの面積比は、PD41及びPD42への集光に用いられるパターン面積に占める、PD41への集光に用いられるパターン面積の比率である。
3 配線層
4 PD層
5 フィルタ層
6 光学素子
10 撮像装置
12 撮像素子
13 信号処理制御部
41 PD
42 PD
60 透明層
61 領域
62 領域
70 構造体
71 構造体
72 構造体
Claims (16)
- 第1の光電変換素子及び第2の光電変換素子を含む画素を覆うための透明層と、
前記透明層上又は前記透明層内において、前記透明層の面方向に配置された複数の構造体と、
を備え、
前記透明層は、
入射した光を前記第1の光電変換素子に導く第1の領域と、
入射した光を前記第2の光電変換素子に導く第2の領域と、
を含み、
前記第1の領域及び前記第2の領域のうちの少なくとも前記第2の領域に前記複数の構造体が配置され、
前記第1の領域は、前記第2の領域よりも小さいことを特徴とする、
光学素子。 - 前記複数の構造体は、前記複数の構造体どうしの間の部分の屈折率よりも高い屈折率を有する柱状構造体であり、
平面視したときに、前記複数の構造体のうちの少なくとも一部の構造体は、互いに異なる幅を有し、
側面視したときに、前記複数の構造体は同じ高さを有することを特徴とする、
請求項1に記載の光学素子。 - 前記複数の構造体は、前記複数の構造体どうしの間の部分の屈折率よりも高い屈折率を有する柱状構造体であり、
前記複数の構造体のうちの少なくとも一部の構造体は、互いに異なる屈折率を有し、
側面視したときに、前記複数の構造体は同じ高さを有することを特徴とする、
請求項1に記載の光学素子。 - 前記複数の構造体の各々は、入射した光に対して、平面視したときに当該構造体が有する幅の大きさに応じた光位相遅延量を与え、
前記複数の構造体の各々は、前記第1の領域に入射した光を前記第1の光電変換素子に導くとともに前記第2の領域に入射した光を前記第2の光電変換素子に導くための光位相遅延量分布を与える幅を有することを特徴とする、
請求項1~3のいずれか1項に記載の光学素子。 - 前記複数の構造体の各々は、入射した光に対して、当該構造体が有する屈折率の大きさに応じた光位相遅延量を与え、
前記複数の構造体の各々は、前記第1の領域に入射した光を前記第1の光電変換素子に導くとともに前記第2の領域に入射した光を前記第2の光電変換素子に導くための光位相遅延量分布を与える屈折率を有することを特徴とする、
請求項1~4のいずれか1項に記載の光学素子。 - 前記光位相遅延量分布は、光を集光するための光位相遅延量分布であることを特徴とする、
請求項4又は5に記載の光学素子。 - 前記第1の領域及び前記第2の領域の一方の領域における前記光位相遅延量分布を考慮しない場合、他方の領域における光位相遅延量分布は対称性を有することを特徴とする、
請求項4~6のいずれか1項に記載の光学素子。 - 平面視したときに、前記第1の光電変換素子及び前記第2の光電変換素子は、同じサイズを有することを特徴とする、
請求項1~7のいずれか1項に記載の光学素子。 - 平面視したときに、前記第1の領域は、前記第2の領域の内側に位置していることを特徴とする、
請求項1~8のいずれか1項に記載の光学素子。 - 請求項1~9のいずれか1項に記載の光学素子と、
各々が前記第1の光電変換素子及び前記第2の光電変換素子を含む複数の画素と、
を備えることを特徴とする、
撮像素子。 - 前記画素と前記光学素子との間に設けられたフィルタ層を備えることを特徴とする、
請求項10に記載の撮像素子。 - 請求項10又は11に記載の撮像素子と、
前記撮像素子から得られた電気信号に基づいて画像信号を生成する信号処理制御部と、
を備えることを特徴とする、
撮像装置。 - 前記信号処理制御部は、前記第1の光電変換素子の露光期間と前記第2の光電変換素子の露光期間とが異なるように露光制御することを特徴とする、
請求項12に記載の撮像装置。 - 第1の光電変換素子及び第2の光電変換素子を含む画素を覆うための透明層と、
前記透明層上において、前記透明層の面方向に配置された複数の凹部と、
を備え、
前記透明層は、
入射した光を前記第1の光電変換素子に導く第1の領域と、
入射した光を前記第2の光電変換素子に導く第2の領域と、
を含み、
前記第1の領域及び前記第2の領域のうちの少なくとも前記第2の領域に前記複数の凹部が配置され、
前記第1の領域は、前記第2の領域よりも小さいことを特徴とする、
光学素子。 - 前記複数の凹部を構成する材料の屈折率よりも高い屈折率を持つ流体により、
前記複数の凹部の空隙が満たされていることを特徴とする、
請求項14に記載の光学素子。 - 前記複数の凹部を構成する材料が、
1よりも低い屈折率を持つメタマテリアルであることを特徴とする、
請求項14に記載の光学素子。
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