WO2022065407A1 - レーザ加工方法およびレーザ加工装置 - Google Patents
レーザ加工方法およびレーザ加工装置 Download PDFInfo
- Publication number
- WO2022065407A1 WO2022065407A1 PCT/JP2021/034982 JP2021034982W WO2022065407A1 WO 2022065407 A1 WO2022065407 A1 WO 2022065407A1 JP 2021034982 W JP2021034982 W JP 2021034982W WO 2022065407 A1 WO2022065407 A1 WO 2022065407A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser
- light component
- time
- processing method
- pulsed
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 86
- 238000003672 processing method Methods 0.000 title claims description 19
- 230000005284 excitation Effects 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000011888 foil Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims description 41
- 230000007423 decrease Effects 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 claims description 6
- 238000003754 machining Methods 0.000 claims description 4
- 239000013307 optical fiber Substances 0.000 description 50
- 230000003321 amplification Effects 0.000 description 24
- 238000003199 nucleic acid amplification method Methods 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 14
- 238000002845 discoloration Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000003698 laser cutting Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 102100038032 F-box only protein 17 Human genes 0.000 description 2
- 101000878584 Homo sapiens F-box only protein 17 Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000036544 posture Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 240000001973 Ficus microcarpa Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/0675—Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10038—Amplitude control
- H01S3/10046—Pulse repetition rate control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
- H01S3/1024—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping for pulse generation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/18—Sheet panels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/12—Copper or alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
- H01S3/094011—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre with bidirectional pumping, i.e. with injection of the pump light from both two ends of the fibre
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094076—Pulsed or modulated pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10038—Amplitude control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Definitions
- the present invention relates to a laser processing method and a laser processing apparatus.
- a giant pulse is applied to the processing target to raise the temperature of the processing target to increase the absorption rate of the laser beam, and after the generation of the giant pulse, the steady output is generated.
- Patent Document 1 A method of irradiating a processing target with a laser beam to process the processing target is disclosed.
- the present invention has been made in view of the above, and an object of the present invention is to provide a laser processing method and a laser processing apparatus suitable for processing a processing target made of a metal foil.
- one aspect of the present invention is a method of laser processing a processing target made of at least one metal foil, in which pulsed excitation energy is supplied to a laser medium to emit laser light.
- the step of generating the laser beam and the step of irradiating the surface of the object to be processed with the laser beam include a pulsed light component and a continuous light component that follows the pulsed light component in time.
- It is a laser processing method including further including a step of limiting the duration of the continuous light component so that the ratio of the energy of the continuous light component to the energy of the pulsed light component is equal to or less than a predetermined value.
- the ratio may be 40 or less.
- the ratio may be 5 or less.
- the time width of the laser beam may be 12 ⁇ s or less.
- the time width may be 2.3 ⁇ s or less.
- It may further include a step of supplying pulsed electric power to the excitation light source and generating excitation light as the excitation energy.
- the power pulse may be rectangular and have a time width of 10 ⁇ s or less.
- the pulse of the power is rectangular and the time width is set to the shortest on-time or more.
- the time width is narrower than the shortest on-time, the peak power of the pulsed light component decreases. It may be a value.
- the repetition frequency of the power pulse may be 5 kHz or higher.
- the repetition frequency of the power pulse may be 50 kHz or more and less than 300 kHz.
- It may further include a step of moving the irradiation position of the laser beam on the surface of the processing target relative to the processing target.
- One aspect of the present invention is a device for laser processing a processing target, which is a laser device that supplies pulsed excitation energy to a laser medium to generate laser light, and irradiates the surface of the processing target with the laser light.
- An optical head and a control device for controlling the laser device are provided, and the control device includes a pulsed light component generated by the laser light due to relaxation vibration oscillation in the early stage of generation of the laser light.
- the duration of the continuous light component including the continuous light component that follows the pulsed light component in time, so that the ratio of the energy of the continuous light component to the energy of the pulsed light component is equal to or less than a predetermined value.
- It is a laser processing device that controls to limit the light.
- FIG. 1 is a schematic configuration diagram of the laser processing apparatus according to the first embodiment.
- FIG. 2 is a schematic configuration diagram of the laser apparatus shown in FIG.
- FIG. 3 is a schematic configuration diagram of the drive unit shown in FIG.
- FIG. 4 is a diagram showing a waveform of one pulse of laser light.
- FIG. 5 is an enlarged view of a part of the time range of FIG.
- FIG. 6 is an explanatory diagram of the time width of the laser beam.
- FIG. 7 is a diagram showing an example of the relationship between the repetition frequency and the shortest on-time.
- FIG. 8 is a schematic configuration diagram of the laser processing apparatus according to the second embodiment.
- FIG. 1 is a schematic configuration diagram of the laser processing apparatus according to the first embodiment.
- the laser processing device 100 includes a laser device 110, an optical head 120, an optical fiber 130 connecting the laser device 110 and the optical head 120, and a control device 140.
- the laser processing device 100 is a device that performs laser cutting among laser processing such as welding, drilling, and cutting.
- the processing target W of the laser processing apparatus 100 is made of a metal material.
- the metal material is, for example, a copper-based material such as copper or a copper alloy, or an aluminum-based material such as aluminum or an aluminum alloy.
- the processing target W is composed of at least one metal foil.
- the processing target W is composed of one metal foil or a plurality of laminated metal foils.
- the metal foil is, for example, an aluminum-based rolled material having a thickness of 6 ⁇ m to 200 ⁇ m specified in JIS H 4160, but the thickness is not limited to that, and may be, for example, 500 ⁇ m or less or 250 ⁇ m or less. The same applies when the metal foil is made of another metal material.
- the processing target W may be a battery electrode such as a lithium ion battery.
- the processing target W may be coated with an active substance such as manganese dioxide or lithium.
- the processing target W may be coated with a substance different from the active material, or a surface layer such as a plating layer or a coating film may be formed on the entire surface or partially.
- the laser device 110 is configured to be capable of outputting a single mode laser beam having a power of several kW.
- the laser device 110 will be described in detail later.
- the optical fiber 130 guides the laser light output from the laser device 110 to the optical head 120.
- the optical fiber 130 is configured to propagate the single-mode laser beam.
- the M2 beam quality of the single mode laser beam is set to 1.2 or less.
- the optical fiber 130 is configured to propagate the multimode laser light.
- the optical head 120 is an optical device for irradiating the processing target W with the laser light input from the laser device 110.
- the optical head 120 includes a collimating lens 121 and a condenser lens 122.
- the optical head 120 may have optical components other than the collimating lens 121 and the condenser lens 122.
- the collimating lens 121 collimates the input laser beam.
- the condenser lens 122 collects the collimated laser light and irradiates the processing target W as the laser light L (output light).
- the optical head 120 irradiates the surface Wa of the processing target W with the laser beam L in the negative direction of the Z axis.
- the irradiation position of the laser beam L on the surface of the processing target W is relatively movable with respect to the processing target W.
- Such relative movement means that the optical head 120 and the processing target W move relatively due to the movement of the optical head 120, the movement of the processing target W, or the movement of both the optical head 120 and the processing target W.
- the optical head 120 is provided with a moving mechanism that can move in the XY direction, or the machining target W is supported by a stage that can move the machining target in the XY direction.
- the relative movement as described above is not always necessary, and even in cutting and welding, for example, in the case of spot welding or cutting of thin metal foil, relative movement may not be necessary.
- the control device 140 controls the operation of the laser device 110 and the operation of the drive mechanism of the stage that supports the optical head 120 or the processing target W.
- the control device 140 may be composed of, for example, a personal computer and its peripheral devices.
- FIG. 2 is a schematic configuration diagram of the laser device 110 shown in FIG.
- the laser device 110 is configured as a CW laser device capable of outputting a continuous wave (CW) laser beam. Therefore, it is not necessary to have a Q-switch mechanism for outputting the pulsed laser beam.
- CW continuous wave
- the laser device 110 is an optical fiber laser, and includes a plurality of semiconductor excitation light sources 1, a plurality of optical fibers 2, an optical combiner 3, an optical fiber plug grating (FBG) 4, an optical fiber for amplification 5, and the like. It includes an FBG 7, an optical combiner 8, a plurality of optical fibers 9, a plurality of semiconductor excitation light sources 6, an output optical fiber 11, and a drive unit 20. Each element is appropriately connected by an optical fiber.
- the output optical fiber 11 is optically coupled to the optical fiber 130 shown in FIG. 1 or is a part (input end) of the optical fiber 130.
- Each of the semiconductor excitation light sources 1 and 6 is an example of an excitation light source, and is configured as a laser diode module (LDM).
- LDM laser diode module
- Each semiconductor excitation light source 1 outputs excitation light supplied to the amplification optical fiber 5.
- the amplification optical fiber 5 is an example of a laser medium, and the excitation light is an example of excitation energy.
- the excitation light has a wavelength capable of photoexciting the amplification optical fiber 5, for example, a wavelength of 915 [nm].
- Each of the plurality of optical fibers 2 propagates the excitation light output from each semiconductor excitation light source 1 and outputs the excitation light to the optical combiner 3.
- the optical combiner 3 is composed of TFB (Tapered Fiber Bundle) in this embodiment.
- the optical combiner 3 combines the excitation light input from each optical fiber 2 with the optical fiber of the signal optical port and outputs the excitation light to the amplification optical fiber 5.
- the amplification optical fiber 5 is a YDF (Ytterbium Doped Fiber) in which ytterbium (Yb) ion, which is an amplifying substance, is added to a core portion made of quartz glass, and the outer periphery of the core portion is made of quartz glass. It is a double clad type optical fiber in which the inner clad layer formed and the outer clad layer made of resin or the like are sequentially formed.
- the core portion of the amplification optical fiber 5 has an NA of, for example, 0.08, and is configured to propagate Yb ion emission, for example, light having a wavelength of 1070 [nm] in a single mode.
- the absorption coefficient of the core portion of the amplification optical fiber 5 is, for example, 200 [dB / m] at a wavelength of 915 [nm]. Further, the power conversion efficiency from the excitation light input to the core portion to the laser oscillation light is, for example, 70%. However, the absorption coefficient and power conversion efficiency are not limited to these.
- the FBG 4 which is the rear end side reflecting means is connected between the optical fiber of the signal optical port of the optical combiner 3 and the optical fiber 5 for amplification.
- the FBG4 has a center wavelength of, for example, 1070 [nm], a reflectance in a wavelength band having a width of about 2 [nm] in and around the center wavelength of about 100%, and almost all light having a wavelength of 915 [nm] is transmitted. do.
- the FBG 7 which is an output side reflecting means is connected between the optical fiber of the signal optical port of the optical combiner 8 and the optical fiber 5 for amplification.
- the FBG7 has a center wavelength of, for example, 1070 [nm], which is substantially the same as that of the FBG4, has a reflectance of about 10% to 30% at the center wavelength, and has a full width at half maximum of the reflection wavelength band of about 1 [nm]. Most of the light having a wavelength of 915 [nm] is transmitted.
- the FBGs 4 and 7 are arranged for each of both ends of the optical fiber 5 for amplification, and form an optical fiber resonator for light having a wavelength of 1070 [nm].
- Each semiconductor excitation light source 6 outputs excitation light supplied to the amplification optical fiber 5.
- the excitation light has a wavelength capable of photoexciting the amplification optical fiber 5, for example, a wavelength of 915 [nm].
- Each of the plurality of optical fibers 9 propagates the excitation light output from each semiconductor excitation light source 6 and outputs the excitation light to the optical combiner 8.
- the optical combiner 8 is composed of TFB in this embodiment.
- the optical combiner 8 combines the excitation light input from each optical fiber 9 with the optical fiber of the signal optical port and outputs the excitation light to the amplification optical fiber 5.
- Yb ions in the core portion are photoexcited by the excitation light, and light in a band including a wavelength of 1070 [nm] is emitted.
- the light emission having a wavelength of 1070 [nm] is laser-oscillated by the optical amplification action of the amplification optical fiber 5 and the action of the optical resonator composed of the FBGs 4 and 7.
- the laser device 110 generates a laser beam.
- the output optical fiber 11 is arranged on the opposite side of the FBG 7 and is connected to the optical fiber of the signal optical port of the optical combiner 8.
- the oscillated laser light (laser oscillated light) is output from the output optical fiber 11.
- the drive unit 20 supplies a drive current to the semiconductor excitation light sources 1 and 6 in response to the indicated voltage signal input from the control device 140.
- FIG. 3 is a schematic configuration diagram of the drive unit shown in FIG.
- the drive unit 20 is mainly composed of an analog circuit, and includes a power supply device 21, a field effect transistor (FET) 22, a shunt resistor 23, an operational amplifier 24, and a feedback circuit 25.
- FET field effect transistor
- the power supply device 21 is a known DC power supply connected so as to supply a current to each of the semiconductor excitation light sources 1 and 6.
- each semiconductor excitation light source 1 is connected in series, and each semiconductor excitation light source 6 is connected in series separately from each semiconductor excitation light source 1. Further, each semiconductor excitation light source 1 and each semiconductor excitation light source 6 may be connected in series.
- the FET 22 is connected to the downstream side of each of the semiconductor excitation light sources 1 and 6 in the power supply line from the power supply device 21 to the ground.
- the FET 22 adjusts the amount of current supplied from the power supply device 21 to the semiconductor excitation light sources 1 and 6 via the power supply line according to the applied gate voltage.
- the shunt resistor 23 is connected to the downstream side of the FET 22 in the power supply line.
- the shunt resistor 23 has a function of extracting information on the amount of current flowing through the power supply line as a voltage value.
- the indicated voltage signal is input to the non-inverting input, the voltage value of the shunt resistor 23 is input to the inverting input, and the output is connected to the gate of the FET 22.
- the feedback circuit 25 is configured as an integrating circuit including a capacitor, and constitutes a feedback path from the output of the operational amplifier 24 to the inverting input.
- the drive unit 20 can execute constant current control for supplying a constant current to each of the semiconductor excitation light sources 1 and 6.
- the constant current is a current value corresponding to the voltage level of the indicated voltage signal.
- a step of supplying pulsed excitation energy to the laser medium and generating laser light is executed.
- the control device 140 executes a step of outputting a pulse-shaped indicated voltage signal having a predetermined repetition period to the drive unit 20 of the laser device 110.
- the drive unit 20 supplies pulse-like drive power (drive current) to each of the semiconductor excitation light sources 1 and 6, and executes a step of generating pulse-like excitation light as excitation energy.
- the drive power pulse is, for example, rectangular.
- the semiconductor excitation light sources 1 and 6 supply pulse-shaped excitation light to the amplification optical fiber 5 to generate pulse-shaped laser light having a predetermined repetition period.
- the optical head 120 to which the laser beam is input sets the step of irradiating the surface Wa of the processing target W with the laser light L and the irradiation position of the laser light L on the surface Wa of the processing target W relative to the processing target W. Perform the step of moving the target.
- the step of moving the irradiation position of the laser beam L relative to the processing target W may be executed by the control device 140 driving a stage that supports the processing target W. As a result, laser cutting of the processing target W is executed.
- the laser beam L includes a pulsed light component generated due to the relaxation oscillating oscillation at the initial stage of the generation of the laser beam L, and a continuous light component following the pulsed light component in time. ..
- the dross It is possible to perform laser cutting in which the occurrence of discoloration is suppressed.
- the energy ratio and the time width can be realized by controlling the laser device 110 by the control device 140.
- the laser device 110 is driven by, for example, using a general-purpose control circuit without providing a Q-switch mechanism by supplying a pulsed excitation energy to the laser medium and executing a step of generating a laser beam.
- a pulsed light component can be generated by control.
- the present inventors have found that the pulsed light component can be applied to the processing of a metal foil, which has been difficult in the past, because of the sharp peak generated due to the relaxation vibration.
- the present inventors have also found that if the power or energy of the continuous light component following the pulsed light component is too strong, the amount of heat input to the metal foil becomes excessive, which is rather inconvenient for processing the metal foil. ..
- the present inventors adjust the amount of heat input by controlling the duration of the continuous light component so that the ratio of the energy of the continuous light component to the energy of the pulsed light component is equal to or less than a predetermined value.
- the present inventors have also found that the adjustment of the desired energy ratio can be easily realized by adjusting the pulse width of the pulsed electric power supplied to each of the semiconductor excitation light sources 1 and 6. It is.
- the energy ratio is 40 or less as an example, and the time width of the laser beam L is 12 ⁇ s or less as an example.
- the duration of the continuous light component is defined as, for example, the time from time t3 to time t9 in FIGS. 5 and 6 described later, and represents the temporal length in which the continuous light component has power. If it is a definition, it is not particularly limited.
- FIG. 4 is a diagram showing a waveform of one pulse of the laser beam L.
- FIG. 5 is an enlarged view of a part of the time range of FIG.
- the horizontal axis is time [ ⁇ s] and the vertical axis is power [W].
- the time on the horizontal axis is a time in which a predetermined time before the generation of one pulse of the laser beam L is set to 0 ⁇ s.
- the laser beam L includes a pulsed light component PC and a continuous light component CC in one pulse.
- the pulsed excitation light is supplied from each of the semiconductor excitation light sources 1 and 6 to the amplification optical fiber 5, so that the pulsed light component caused by the relaxation vibration oscillation depends on the shape of the rising edge of the excitation light.
- PC is generated.
- the pulsed light component PC has a sharp peak shape with high power and short pulse width.
- a continuous light component CC that is continuous in time is generated after the pulsed light component PC in time, but the power of the continuous light component CC is reduced at an early stage due to the fall of the excitation light.
- the line L1 indicates the position at time t1 before the pulsed light component PC is generated, and the line L2 indicates the position at time t2 after the continuous light component CC is attenuated, and the light power is 0 W at any time.
- the line L3 indicates the position of the time t3 at which the minimum value is first taken after the power of the pulsed light component PC reaches the peak in the laser light L.
- the position of such a minimum value is defined as the boundary between the pulsed light component PC and the continuous light component CC.
- a vibration component having a power smaller than that of the pulsed light component PC is generated even after the time t3, but this component is also included in the continuous light component CC in the present specification. Therefore, the energy of the pulsed light component PC is obtained by integrating the power of the pulsed light component PC in the range of time t1 to time t3, for example.
- the unit of energy is, for example, joules.
- the energy of the continuous light component CC is obtained by integrating the power of the continuous light component CC in the range of time t3 to time t2.
- the time t1 is not limited to this value if the power of the pulsed light component PC is 0 W
- the time t2 is not limited to this value if the power of the continuous light component CC is 0 W.
- the time width of the laser beam L is 12 ⁇ s or less.
- FIG. 6 is an explanatory diagram of the time width of the laser beam.
- the line L4 shows the power level of the peak of the pulsed light component PC
- the line L5 shows the power level of 50% of the peak.
- the line L6 indicates the power level of the maximum value of the continuous light component CC
- the line L7 indicates the power level of 50% of the maximum value.
- the time width TW of the laser beam is set to the maximum value at the falling edge of the continuous light component CC from the time t8 (indicated by the line L8), which is 50% of the peak at the rising edge of the pulsed light component PC. It is defined by the time width up to the time t9 (indicated by the line L9), which is 50%.
- the energy ratio of the energy of the continuous light component CC to the energy of the pulsed light component PC is set to, for example, 40 or less, and the time width TW of the laser beam L is set to, for example, 12 ⁇ s or less.
- the energy ratio is 5 or less, or when the time width TW is 2.3 ⁇ s or less, the heat input by the continuous light component CC is further suppressed, so that the occurrence of defects due to the heat input is further suppressed.
- the energy ratio and the time width TW values may be appropriately set according to, for example, the characteristics of the processing target W, for example, the material and thickness of the metal foil, the number of sheets, and the like.
- the waveform and power of the laser beam L change depending on the waveform of the pulse of the excitation light output by each of the semiconductor excitation light sources 1 and 6.
- the waveform of the pulse of the excitation light changes depending on the waveform of the pulse of the drive power from the drive unit 20.
- the waveform of the drive power pulse can be controlled by the waveform of the pulse of the instruction voltage signal from the control device 140. Therefore, the waveform and power of the laser beam L can be controlled by changing the waveform of the pulse of the indicated voltage signal from the control device 140.
- the repetition frequency of the drive power pulse is not particularly limited, but is, for example, 5 kHz or more.
- the repetition frequency is 5 kHz or more, it is easy to obtain a suitable waveform of the laser beam L having the above-mentioned energy ratio of 40 or less and a time width TW of 12 ⁇ s or less.
- the drive power pulse on time is the time width of the drive power pulse.
- the pulse time width of the drive power is narrow to some extent, it is suitable for reducing the energy of the continuous light component CC, but according to the diligent studies of the present inventors, if it is too narrow, the peak of the pulse light component PC is reached. Power is reduced. Therefore, in order to efficiently utilize the energy of the pulsed light component PC for laser processing, a narrow time width is preferable so that the peak power of the pulsed light component PC does not decrease. Therefore, in the present specification, the shortest on-time is defined as one of the indexes of the pulse time width of the drive power. The shortest on-time is a value at which the peak power of the pulsed light component decreases when the pulse time width of the drive power is narrower than the shortest on-time. In this case, if the time width of the power pulse is set to the shortest on-time or longer, the energy of the pulsed light component PC can be efficiently utilized for laser processing.
- FIG. 7 is a diagram showing the relationship between the repetition frequency and the shortest on-time in the laser device having the same configuration as the laser device 110 of the first embodiment.
- the horizontal axis is the repetition frequency of the drive power pulse, and the vertical axis is the shortest on-time.
- the numerical values from "104" to "1002" in the legend indicate the value of the average power [W] in the steady state at each indicated value set for the laser device 110.
- the indicated value is the voltage value of the indicated voltage signal.
- the laser device 110 is configured so that 1000 W is the rated laser output.
- the shortest on-time increases as the repetition frequency decreases. Also, the shortest on-time increases as the average power decreases.
- the on-time of the drive power pulse is about 10 ⁇ s or less. At this time, if the repetition frequency is 5 kHz or more, the on-time can be set to the shortest on-time at various average power values.
- the laser device 110 is configured as a CW laser device, it can generate a pulsed light component PC having a sharp peak using relaxation vibration oscillation, so that the pulse laser device 110 includes a Q-switch mechanism.
- the device can be configured more simply and at lower cost.
- a laser processing device having the same configuration as the laser processing device 100 of the first embodiment was manufactured, and a cutting experiment of a processing target made of a metal foil was performed.
- the object to be processed was one copper foil with a thickness of 8 ⁇ m.
- the drive power was set so that the average power in the steady state at each indicated value was 1000 W.
- the repetition frequency of the drive power pulse was set to various values between less than 5 kHz and 300 kHz. Further, the on-time of the drive power pulse was set to various values between 0.5 ⁇ s and 100 ⁇ s.
- Table 1 shows the processing results.
- the processing quality was graded according to a predetermined evaluation standard by checking the appearance with a microscope from the viewpoint of dross and discoloration (due to the formation of oxidized parts, etc.).
- the size of the dross is large and unacceptable quality is "poor”
- the size of the dross is small and the size of the oxidized part is large
- the acceptable quality is "good”
- the size of the dross is small and the size of the oxidized part is medium.
- the higher quality class was rated "excellent” and the highest quality class with smaller dross and oxide size was rated "best”.
- "-" corresponds to the condition that the experiment has not been conducted.
- the repetition frequency is 50 kHz or more and less than 300 kHz
- FIG. 8 is a schematic configuration diagram of the laser processing apparatus according to the second embodiment.
- the optical head 120 has a galvano scanner 126 between the collimating lens 121 and the condenser lens 122.
- the galvano scanner 126 has two mirrors 126a.
- the irradiation direction and irradiation position of the laser beam L change due to the change in the postures of these two mirrors 126a. That is, the laser processing apparatus 100A can move the irradiation position of the laser beam L and sweep the laser beam L without moving the optical head 120.
- the control device 140 can control the operation of the motor 126b corresponding to each mirror 126a so that the angle (posture) of the mirror 126a changes. The same operation and effect as in the first embodiment can be obtained by this embodiment as well.
- the amplification optical fiber 5 is YDF, but an amplification optical fiber to which other rare earth elements such as erbium and neodymium are added as an amplification medium may be used.
- the wavelength of the excitation light and the wavelength of the generated laser light are the wavelengths according to the type of the amplification medium.
- the laser device 110 is an optical fiber laser, but a laser device using another type of laser such as a semiconductor laser or a solid-state laser may be used.
- the pulse of the driving power has a rectangular shape, but the ratio of the energy of the continuous light component to the energy of the pulsed light component is 40 or less, and the time width of the laser light is 12 ⁇ s or less. As long as it can be generated, it is not limited to a rectangular shape. Similarly, the shape of the pulse of the excitation light is not limited.
- the present invention is not limited by the above embodiment.
- the present invention also includes a configuration in which the above-mentioned components are appropriately combined. Further, further effects and modifications can be easily derived by those skilled in the art. Therefore, the broader aspect of the present invention is not limited to the above embodiment, and various modifications can be made.
- the present invention is suitable for use in a laser processing method and a laser processing apparatus.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Mechanical Engineering (AREA)
- Lasers (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
<レーザ加工装置>
図1は、実施形態1に係るレーザ加工装置の模式的な構成図である。このレーザ加工装置100は、レーザ装置110と、光学ヘッド120と、レーザ装置110と光学ヘッド120とを接続する光ファイバ130と、制御装置140と、を備えている。
つぎに、レーザ加工装置100を用いたレーザ加工方法の一例を、レーザ切断の場合を例として説明する。
実施形態1のレーザ加工装置100と同じ構成のレーザ加工装置を作製し、金属箔からなる加工対象の切断実験を行った。加工対象は厚さ8μmの銅箔1枚とした。そして、各指示値での定常状態での平均パワーが1000Wとなるように駆動電力を設定した。駆動電力のパルスの繰り返し周波数は5kHz未満から300kHzまでの間の様々な値に設定した。また、駆動電力のパルスのオン時間は0.5μsから100μsまでの間の様々な値に設定した。
図8は、実施形態2に係るレーザ加工装置の模式的な構成図である。本実施形態では、光学ヘッド120は、コリメートレンズ121と集光レンズ122との間に、ガルバノスキャナ126を有している。ガルバノスキャナ126は、二つのミラー126aを有している。これら二つのミラー126aの姿勢の変化により、レーザ光Lの照射方向および照射位置が変化する。すなわち、レーザ加工装置100Aは、光学ヘッド120を移動させることなく、レーザ光Lの照射位置を移動させ、レーザ光Lを掃引することができる。制御装置140は、ミラー126aの角度(姿勢)が変化するよう、各ミラー126aに対応するモータ126bの作動を制御することができる。本実施形態によっても、実施形態1と同様の作用および効果が得られる。
2、9、130 :光ファイバ
3、8 :光合波器
5 :増幅用光ファイバ
11 :出力光ファイバ
20 :駆動部
21 :電源装置
22 :FET
23 :シャント抵抗
24 :オペアンプ
25 :フィードバック回路
100、100A :レーザ加工装置
110 :レーザ装置
120 :光学ヘッド
121 :コリメートレンズ
122 :集光レンズ
126 :ガルバノスキャナ
126a :ミラー
126b :モータ
140 :制御装置
CC :連続光成分
L :レーザ光
PC :パルス光成分
SD :掃引方向
TW :時間幅
W :加工対象
Wa :表面
Claims (12)
- 少なくとも1枚の金属箔からなる加工対象をレーザ加工する方法であって、
レーザ媒質にパルス状の励起エネルギーを供給し、レーザ光を発生させるステップと、
前記加工対象の表面に前記レーザ光を照射するステップと、
を含み、
前記レーザ光は、パルス光成分と、前記パルス光成分よりも時間的に後に続く、連続光成分とを含み、
前記パルス光成分のエネルギーに対する前記連続光成分のエネルギーの比が所定値以下になるように、前記連続光成分の持続時間を制限するステップをさらに含む
レーザ加工方法。 - 前記比が40以下である
請求項1に記載のレーザ加工方法。 - 前記比が5以下である
請求項2に記載のレーザ加工方法。 - 前記レーザ光の時間幅が12μs以下である
請求項1~3のいずれか一つに記載のレーザ加工方法。 - 前記時間幅が2.3μs以下である
請求項4に記載のレーザ加工方法。 - 励起光源にパルス状の電力を供給し、前記励起エネルギーとして励起光を発生させるステップをさらに含む
請求項1~5のいずれか一つに記載のレーザ加工方法。 - 前記電力のパルスは矩形状であって、時間幅が10μs以下である
請求項6に記載のレーザ加工方法。 - 前記電力のパルスは矩形状であって、時間幅が最短オン時間以上に設定され、
前記最短オン時間は、前記時間幅が当該最短オン時間よりも狭いと前記パルス光成分のピークパワーが減少する値である
請求項6または7に記載のレーザ加工方法。 - 前記電力のパルスの繰り返し周波数は5kHz以上である
請求項6~8のいずれか一つに記載のレーザ加工方法。 - 前記電力のパルスの繰り返し周波数は50kHz以上300kHz未満である
請求項9に記載のレーザ加工方法。 - 前記加工対象の表面における前記レーザ光の照射位置を前記加工対象に対して相対的に移動させるステップをさらに含む
請求項1~10のいずれか一つに記載のレーザ加工方法。 - 加工対象をレーザ加工する装置であって、
レーザ媒質にパルス状の励起エネルギーを供給し、レーザ光を発生させるレーザ装置と、
前記加工対象の表面に前記レーザ光を照射する光学ヘッドと、
前記レーザ装置を制御する制御装置と、
を備え、
前記制御装置は、前記レーザ光が、前記レーザ光の発生の初期に、緩和振動発振に起因して発生するパルス光成分と、前記パルス光成分よりも時間的に後に続く連続光成分とを含み、前記パルス光成分のエネルギーに対する前記連続光成分のエネルギーの比が所定値以下になるように、前記連続光成分の持続時間を制限する制御を行う
レーザ加工装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202180063911.7A CN116323073A (zh) | 2020-09-25 | 2021-09-24 | 激光加工方法以及激光加工装置 |
JP2022552056A JP7407964B2 (ja) | 2020-09-25 | 2021-09-24 | レーザ加工方法およびレーザ加工装置 |
EP21872536.4A EP4219063A1 (en) | 2020-09-25 | 2021-09-24 | Laser processing method and laser processing apparatus |
KR1020237009430A KR20230051584A (ko) | 2020-09-25 | 2021-09-24 | 레이저 가공 방법 및 레이저 가공 장치 |
US18/185,415 US20230219167A1 (en) | 2020-09-25 | 2023-03-17 | Laser processing method and laser processing apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020161473 | 2020-09-25 | ||
JP2020-161473 | 2020-09-25 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US18/185,415 Continuation US20230219167A1 (en) | 2020-09-25 | 2023-03-17 | Laser processing method and laser processing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2022065407A1 true WO2022065407A1 (ja) | 2022-03-31 |
Family
ID=80846596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2021/034982 WO2022065407A1 (ja) | 2020-09-25 | 2021-09-24 | レーザ加工方法およびレーザ加工装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20230219167A1 (ja) |
EP (1) | EP4219063A1 (ja) |
JP (1) | JP7407964B2 (ja) |
KR (1) | KR20230051584A (ja) |
CN (1) | CN116323073A (ja) |
WO (1) | WO2022065407A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024085199A1 (ja) * | 2022-10-18 | 2024-04-25 | 古河電気工業株式会社 | 金属箔のレーザ切断方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02500628A (ja) * | 1986-12-16 | 1990-03-01 | ピー・アール・シー・コーポレーション | 物のレーザー加工方法 |
JP2013512111A (ja) * | 2009-11-30 | 2013-04-11 | イ−エスアイ−パイロフォトニクス レーザーズ インコーポレイテッド | 一連のレーザパルスを用いて薄膜にラインをスクライブするための方法及び装置 |
JP2014107349A (ja) * | 2012-11-26 | 2014-06-09 | Seidensha Electronics Co Ltd | 炭酸ガスレーザの励起媒質ガス、炭酸ガスレーザ装置、炭酸ガスレーザを用いたマーキング装置、炭酸ガスレーザ発生方法、炭酸ガスレーザを用いたマーキング方法、及び炭酸ガスレーザ光 |
JP2015032682A (ja) * | 2013-08-02 | 2015-02-16 | 住友重機械工業株式会社 | ガスレーザ装置、パルスレーザビームの出力方法、及びレーザ加工装置 |
JP6347676B2 (ja) | 2014-06-19 | 2018-06-27 | 株式会社フジクラ | ファイバレーザ装置及び被加工物の加工方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58223577A (ja) | 1982-06-21 | 1983-12-26 | 株式会社椿本チエイン | ドア等の開閉用ロボツトのフインガ |
JP2500628B2 (ja) | 1993-07-14 | 1996-05-29 | 日本電気株式会社 | カ―ボンナノチュ―ブ細線およびスイッチ |
JP2010081884A (ja) | 2008-09-30 | 2010-04-15 | Sony Corp | サンプリング装置及びサンプリング方法 |
JP5338334B2 (ja) | 2009-01-21 | 2013-11-13 | オムロン株式会社 | レーザ光源装置およびレーザ加工装置 |
JP5983407B2 (ja) | 2010-09-15 | 2016-08-31 | 住友電気工業株式会社 | レーザ加工方法 |
-
2021
- 2021-09-24 JP JP2022552056A patent/JP7407964B2/ja active Active
- 2021-09-24 CN CN202180063911.7A patent/CN116323073A/zh active Pending
- 2021-09-24 WO PCT/JP2021/034982 patent/WO2022065407A1/ja unknown
- 2021-09-24 KR KR1020237009430A patent/KR20230051584A/ko unknown
- 2021-09-24 EP EP21872536.4A patent/EP4219063A1/en active Pending
-
2023
- 2023-03-17 US US18/185,415 patent/US20230219167A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02500628A (ja) * | 1986-12-16 | 1990-03-01 | ピー・アール・シー・コーポレーション | 物のレーザー加工方法 |
JP2013512111A (ja) * | 2009-11-30 | 2013-04-11 | イ−エスアイ−パイロフォトニクス レーザーズ インコーポレイテッド | 一連のレーザパルスを用いて薄膜にラインをスクライブするための方法及び装置 |
JP2014107349A (ja) * | 2012-11-26 | 2014-06-09 | Seidensha Electronics Co Ltd | 炭酸ガスレーザの励起媒質ガス、炭酸ガスレーザ装置、炭酸ガスレーザを用いたマーキング装置、炭酸ガスレーザ発生方法、炭酸ガスレーザを用いたマーキング方法、及び炭酸ガスレーザ光 |
JP2015032682A (ja) * | 2013-08-02 | 2015-02-16 | 住友重機械工業株式会社 | ガスレーザ装置、パルスレーザビームの出力方法、及びレーザ加工装置 |
JP6347676B2 (ja) | 2014-06-19 | 2018-06-27 | 株式会社フジクラ | ファイバレーザ装置及び被加工物の加工方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024085199A1 (ja) * | 2022-10-18 | 2024-04-25 | 古河電気工業株式会社 | 金属箔のレーザ切断方法 |
Also Published As
Publication number | Publication date |
---|---|
US20230219167A1 (en) | 2023-07-13 |
JP7407964B2 (ja) | 2024-01-04 |
KR20230051584A (ko) | 2023-04-18 |
EP4219063A1 (en) | 2023-08-02 |
CN116323073A (zh) | 2023-06-23 |
JPWO2022065407A1 (ja) | 2022-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5203573B2 (ja) | レーザ加工装置 | |
US7599407B2 (en) | Laser control method, laser apparatus, laser treatment method used for the same, laser treatment apparatus | |
JP5338334B2 (ja) | レーザ光源装置およびレーザ加工装置 | |
JP5694711B2 (ja) | Mopa方式ファイバレーザ加工装置及び励起用レーザダイオード電源装置 | |
JP5082798B2 (ja) | レーザ発振装置及びその制御方法 | |
KR20110103839A (ko) | 레이저 가공 장치, 레이저 광원 장치, 및, 레이저 광원 장치의 제어 방법 | |
TWI589080B (zh) | 雷射裝置及雷射加工機 | |
JP5260097B2 (ja) | レーザ加工装置 | |
US20230219167A1 (en) | Laser processing method and laser processing apparatus | |
TWI499147B (zh) | Co2雷射裝置及co2雷射加工裝置 | |
Willis et al. | High-energy Q-switched Tm3+-doped polarization maintaining silica fiber laser | |
US20070237190A1 (en) | High-power Er: YAG laser | |
Shiner | Fiber lasers for material processing | |
JP2000343254A (ja) | レーザーラインパターンニング方法 | |
CN102581485A (zh) | 激光焊接设备 | |
JP3494517B2 (ja) | 固体レーザ装置 | |
JP7328456B2 (ja) | 金属箔のレーザ切断方法 | |
JP3862664B2 (ja) | レーザ溶接方法およびレーザ溶接装置 | |
US20090219955A1 (en) | Laser oscillation method, laser, laser processing method and laser measurement method | |
Šulc et al. | Stable 1318 nm emission from compact Nd: YAG/V: YAG Q-switched laser | |
CA2781123C (en) | Miniaturized laser amplifier arrangement having a pump source | |
JP7214056B1 (ja) | レーザ装置およびレーザ加工機 | |
CN202212693U (zh) | 激光焊接设备 | |
JP2012074434A (ja) | レーザ装置およびレーザ加工装置 | |
KR20190029416A (ko) | 펄스 레이저 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 21872536 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2022552056 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20237009430 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 2021872536 Country of ref document: EP Effective date: 20230425 |