WO2022053349A3 - Optoelectronic semiconductor component, optoelectronic semiconductor device and lidar system - Google Patents

Optoelectronic semiconductor component, optoelectronic semiconductor device and lidar system Download PDF

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Publication number
WO2022053349A3
WO2022053349A3 PCT/EP2021/073957 EP2021073957W WO2022053349A3 WO 2022053349 A3 WO2022053349 A3 WO 2022053349A3 EP 2021073957 W EP2021073957 W EP 2021073957W WO 2022053349 A3 WO2022053349 A3 WO 2022053349A3
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic semiconductor
lidar system
semiconductor device
semiconductor component
component
Prior art date
Application number
PCT/EP2021/073957
Other languages
German (de)
French (fr)
Other versions
WO2022053349A2 (en
Inventor
Hubert Halbritter
Original Assignee
Ams-Osram International Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams-Osram International Gmbh filed Critical Ams-Osram International Gmbh
Publication of WO2022053349A2 publication Critical patent/WO2022053349A2/en
Publication of WO2022053349A3 publication Critical patent/WO2022053349A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0064—Anti-reflection components, e.g. optical isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Semiconductor Lasers (AREA)

Abstract

An optoelectronic semiconductor component (10) comprises a semiconductor layer stack (109), in which a surface-emitting laser diode (103) is arranged, and a modulating device (140) having a current source (149). The modulating device (140) is suitable for modifying a current strength injected into the surface-emitting laser diode (103), thereby making it possible to modify an emission wavelength.
PCT/EP2021/073957 2020-09-09 2021-08-31 Optoelectronic semiconductor component, optoelectronic semiconductor device and lidar system WO2022053349A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102020123558.5 2020-09-09
DE102020123558.5A DE102020123558A1 (en) 2020-09-09 2020-09-09 SEMICONDUCTOR OPTOELECTRONIC DEVICE, SEMICONDUCTOR OPTOELECTRONIC DEVICE AND LIDAR SYSTEM

Publications (2)

Publication Number Publication Date
WO2022053349A2 WO2022053349A2 (en) 2022-03-17
WO2022053349A3 true WO2022053349A3 (en) 2022-05-19

Family

ID=77739080

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2021/073957 WO2022053349A2 (en) 2020-09-09 2021-08-31 Optoelectronic semiconductor component, optoelectronic semiconductor device and lidar system

Country Status (2)

Country Link
DE (1) DE102020123558A1 (en)
WO (1) WO2022053349A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070206190A1 (en) * 2004-03-12 2007-09-06 Thales Frequency shifter in an optical path containing a continous laser source
US20130121354A1 (en) * 2010-07-09 2013-05-16 Furukawa Electric Co., Ltd. Optical interconnection system
EP2918994A1 (en) * 2012-11-09 2015-09-16 Shandong Micro Photographic Electronic Co. Ltd Vcsel-based low-power-consumption gas detection method and device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070206190A1 (en) * 2004-03-12 2007-09-06 Thales Frequency shifter in an optical path containing a continous laser source
US20130121354A1 (en) * 2010-07-09 2013-05-16 Furukawa Electric Co., Ltd. Optical interconnection system
EP2918994A1 (en) * 2012-11-09 2015-09-16 Shandong Micro Photographic Electronic Co. Ltd Vcsel-based low-power-consumption gas detection method and device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GMACHL C: "FREQUENCY TUNING OF A DOUBLE-HETEROJUNCTION ALGAAS/GAAS-VERTICAL-CAVITY SURFACE-EMITTING LASER BY A SERIAL INTEGRATED IN-CAVITY MODULATOR DIODE", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 62, no. 3, 18 January 1993 (1993-01-18), pages 219 - 221, XP000332217, ISSN: 0003-6951, DOI: 10.1063/1.108998 *
JAIN F ET AL: "MONOLITHIC INTEGRATION OF RED, BLUE AND GREEN LASERS FOR SMART PROJECTION DISPLAYS", 1995 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS. ORLANDO, MAY 23 - 25, 1995; [SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS], SANTA ANA, SID, US, vol. VOL. 26, 23 May 1995 (1995-05-23), pages 516 - 519, XP000657166 *

Also Published As

Publication number Publication date
DE102020123558A1 (en) 2022-03-10
WO2022053349A2 (en) 2022-03-17

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