WO2022042187A1 - Procédé de fabrication de couche de conversion de lumière, procédé de fabrication d'élément d'émission de lumière, et appareil électronique - Google Patents

Procédé de fabrication de couche de conversion de lumière, procédé de fabrication d'élément d'émission de lumière, et appareil électronique Download PDF

Info

Publication number
WO2022042187A1
WO2022042187A1 PCT/CN2021/108964 CN2021108964W WO2022042187A1 WO 2022042187 A1 WO2022042187 A1 WO 2022042187A1 CN 2021108964 W CN2021108964 W CN 2021108964W WO 2022042187 A1 WO2022042187 A1 WO 2022042187A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
photoresist mask
layer
mask pattern
grid structure
Prior art date
Application number
PCT/CN2021/108964
Other languages
English (en)
Chinese (zh)
Inventor
刁鸿浩
Original Assignee
北京芯海视界三维科技有限公司
视觉技术创投私人有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京芯海视界三维科技有限公司, 视觉技术创投私人有限公司 filed Critical 北京芯海视界三维科技有限公司
Publication of WO2022042187A1 publication Critical patent/WO2022042187A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning

Definitions

  • the present application relates to the field of optical technology, for example, to a method for fabricating a light conversion layer, a method for fabricating a light-emitting device, and an electronic device.
  • a light conversion layer is usually used to support the display.
  • Embodiments of the present disclosure provide a method for fabricating a light conversion layer, a method for fabricating a light-emitting device, and an electronic device, so as to solve the problem that a process capable of providing effective isolation/support for each pixel in the light conversion layer has not yet appeared. It is conducive to the normal functioning of the light conversion layer and affects the technical problems of the light conversion effect.
  • setting the photoresist mask pattern may include:
  • disposing a photoresist mask pattern in the light-transmitting area of the light-emitting unit layer may include:
  • processing the photoresist mask layer to form a photoresist mask pattern may include:
  • photolithographic processing of the photoresist mask layer to form the photoresist mask pattern may include:
  • the part of the photoresist mask layer that is not used for forming the photoresist mask pattern is removed by a photolithography process.
  • a photoresist mask pattern is arranged on the light-emitting surface of the light-emitting unit layer.
  • providing a metal grid structure may include:
  • the metal grid structure is provided by physical vapor deposition (PVD), chemical vapor deposition (CVD), electroplating, ink jet printing, coating, implantation, or printing.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • electroplating ink jet printing, coating, implantation, or printing.
  • providing a metal grid structure may include:
  • a plating seed layer may also be arranged on the light emitting unit layer.
  • portions of the electroplating seed layer that are not plated with the metal grid structure may also be removed.
  • a cover layer may also be provided on the metal grid structure.
  • providing an overlay may include:
  • providing a metal grid structure may include:
  • the photoresist mask pattern may also be removed, and the light conversion material may be disposed on the metal grid structure.
  • providing the light conversion material may include:
  • the light converting material is disposed in the gaps of the metal grid structure.
  • the method for fabricating a light-emitting device includes the above-mentioned method for fabricating a light conversion layer.
  • the electronic device includes a processor and a memory storing program instructions, where the processor is configured to execute the above-mentioned method for fabricating a light conversion layer or a method for fabricating a light-emitting device when executing the program instructions .
  • FIG. 1A is a schematic flowchart of a method for fabricating a light conversion layer provided by an embodiment of the present disclosure
  • FIG. 1B , FIG. 1C , and FIG. 1D are schematic diagrams of principles for fabricating a light conversion layer provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of the principle of setting a photoresist mask pattern provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure
  • FIG. 5 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure
  • FIG. 6 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure.
  • FIG. 7A and FIG. 7B are schematic diagrams of the principle of setting an electroplating seed layer provided by an embodiment of the present disclosure.
  • FIG. 8 is a schematic diagram of another principle for setting an electroplating seed layer provided by an embodiment of the present disclosure.
  • FIG. 9 is a schematic diagram of the principle of setting a cover layer provided by an embodiment of the present disclosure.
  • FIG. 11 is a schematic diagram of the principle of setting a metal grid structure provided by an embodiment of the present disclosure.
  • FIG. 14 is a schematic structural diagram of an electronic device provided by an embodiment of the present disclosure.
  • 110 light-emitting unit layer; 111: light-emitting unit; 112: light-emitting unit light isolation structure; 113: light-transmitting area; 114: non-light-transmitting area; 120: photoresist mask pattern; 130: metal grid structure; mask layer; X: light exit surface; 150: electroplating seed layer; 160: cover layer; 161: light absorption layer; 163: light reflection layer; 170: gap; 180: gap; 190: light conversion material; 200: electron device; 210: processor; 220: memory; 230: communication interface; 240: bus.
  • an embodiment of the present disclosure provides a method for fabricating a light conversion layer, including:
  • S120 Disposing a metal grid structure in the area of the light emitting unit layer not covered by the photoresist mask pattern.
  • a photoresist mask pattern 120 may be provided in the light-transmitting area 113 of the light-emitting unit layer 110 ;
  • the metal grid structure 130 is disposed in the area not covered by the photoresist mask pattern 120 .
  • the shape of the metal grid structure 130 from the perspective of the front view (for example, the cross-sectional shape of the metal grid structure 130 in the dotted line in the figure, hereinafter simply referred to as: the shape of the metal grid structure 130 ) ) can be trapezoidal, for example: a regular trapezoid.
  • the shape of the metal grid structure 130 may be determined according to actual conditions such as process requirements.
  • the shape of part or all of the metal grid structure 130 may be a rectangle, a regular trapezoid, an inverted trapezoid, a triangle, a polygon, and the like.
  • a photoresist mask layer 140 is disposed on the light emitting unit layer 110 , and the photoresist mask layer 140 is processed to form a photoresist mask pattern 120 .
  • the photoresist mask pattern 120 is disposed on the light-transmitting area 113 of the light-emitting unit layer 110 , which may include:
  • a photoresist mask pattern 120 may be provided on all light-transmitting regions 113 of the light-emitting unit layer 110 .
  • a photoresist mask pattern 120 may be provided in a partial area of the light-transmitting area 113 of the light-emitting unit layer 110 .
  • processing the photoresist mask layer 140 to form the photoresist mask pattern 120 may include:
  • a photolithography process is performed on the photoresist mask layer 140 to form the photoresist mask pattern 120 .
  • performing a photolithography process on the photoresist mask layer 140 to form the photoresist mask pattern 120 may include:
  • the metal grid structure 130 is provided by PVD, CVD, electroplating, ink jet printing, coating, implantation, or printing.
  • the above-mentioned injection manner may be vacuum injection.
  • the above-mentioned printing method may be screen printing.
  • disposing the metal grid structure 130 may include:
  • a plating seed layer 150 may be disposed on the light emitting cell layer 110 .
  • a light-emitting unit optical isolation structure 112 may be disposed between two adjacent light-emitting units 111 .
  • the light-emitting unit light isolation structure 112 may include metal, for example, part or all of the light-emitting unit light isolation structure 112 is made of metal material.
  • a capping layer 160 may also be provided on the metal grid structure 130 .
  • the capping layer 160 may partially or fully surround the metal grid structure 130 .
  • a cover layer 160 is provided on the surface of the metal grid structure 130 .
  • disposing a light isolation layer may include: disposing a light absorbing layer 161 .
  • disposing an optical isolation layer may include disposing a light reflecting layer 163 .
  • the light reflectivity of the light reflection layer 163 and the light reflectivity of the metal grid structure 130 may be the same or different.
  • the light reflectivity of the light reflection layer 163 may be higher than that of the metal grid structure 130 .
  • the metal grid structure 130 is disposed in the gap 170 of the photoresist mask pattern 120 .
  • disposing the light conversion material 190 may include:
  • the light conversion material 190 is disposed in the gaps 180 of the metal grid structure 130 .
  • Disposing the electroplating seed layer 150 on the light emitting unit layer 110 for example: disposing the electroplating seed layer 150 on the light emitting surface X of the light emitting unit layer 110;
  • the light conversion material 190 is provided on the metal grid structure 130 provided with the capping layer 160 .
  • the method for fabricating a light-emitting device includes the above-mentioned method for fabricating a light conversion layer.
  • the light emitting device may be a light emitting module, a display screen, a display, and the like.
  • the display may include a display screen.
  • the display screen may include a light emitting module.
  • the light emitting module may include a light conversion layer.
  • the light emitting device may further include other components for supporting normal operation, such as at least one of components such as a communication interface, a frame, and a control circuit.
  • both 2D display and 3D display can be performed.
  • An embodiment of the present disclosure provides an electronic device, including a processor and a memory storing program instructions, the processor is configured to execute the above-mentioned method for fabricating a light conversion layer or fabricating a light-emitting device when executing the program instructions Methods.
  • the electronic device 200 may include:
  • a processor (processor) 210 and a memory (memory) 220 may also include a communication interface (Communication Interface) 230 and a bus 240 .
  • the processor 210 , the communication interface 230 , and the memory 220 can communicate with each other through the bus 240 .
  • Communication interface 230 may be used for information transfer.
  • the processor 210 may invoke the logic instructions in the memory 220 to execute the method for fabricating a light conversion layer or the method for fabricating a light emitting device of the above embodiments.
  • logic instructions in the memory 220 can be implemented in the form of software functional units and can be stored in a computer-readable storage medium when sold or used as an independent product.
  • the memory 220 may be used to store software programs and computer-executable programs, such as program instructions/modules corresponding to the methods in the embodiments of the present disclosure.
  • the processor 210 executes functional applications and data processing by executing program instructions/modules stored in the memory 220 , that is, implementing the method for fabricating a light conversion layer or a method for fabricating a light emitting device in the above method embodiments.
  • the memory 220 may include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required for at least one function; the storage data area may store data created according to the use of the terminal device, and the like.
  • the memory 220 may include high-speed random access memory, and may also include non-volatile memory.
  • the plurality of light emitting units 111 included in the light emitting unit layer 110 may include at least one of light emitting diodes (LEDs), mini (Mini) LEDs, and micro (Micro) LEDs.
  • the plurality of light emitting units 111 may include other light emitting devices other than LEDs, Mini LEDs, and Micro LEDs.
  • the device type of the light-emitting unit 111 may be determined according to actual conditions such as process requirements, for example: LED, Mini LED, Micro LED or other light-emitting devices.
  • the method for fabricating a light conversion layer, the method for fabricating a light-emitting device, and the electronic device provided by the embodiments of the present disclosure can provide effective isolation/support for each pixel in the light conversion layer, which is conducive to the normal functioning of the light conversion layer, Try to avoid the light conversion effect being affected.
  • Embodiments of the present disclosure provide a computer-readable storage medium storing computer-executable instructions, where the computer-executable instructions are configured to execute the above-mentioned method for fabricating a light conversion layer or a method for fabricating a light-emitting device.
  • An embodiment of the present disclosure provides a computer program product, including a computer program stored on a computer-readable storage medium, where the computer program includes program instructions, and when the program instructions are executed by a computer, the above-mentioned computer is caused to execute the above-mentioned method for making A method for a light conversion layer or a method for making a light emitting device.
  • the above-mentioned computer-readable storage medium may be a transient computer-readable storage medium, and may also be a non-transitory computer-readable storage medium.
  • the computer-readable storage medium and computer program product provided by the embodiments of the present disclosure can provide effective isolation/support for each pixel in the light conversion layer, which is conducive to the normal function of the light conversion layer, and avoids the light conversion effect being affected as much as possible.
  • the technical solutions of the embodiments of the present disclosure may be embodied in the form of a software product.
  • the computer software product is stored in a storage medium and includes at least one instruction to enable a computer device (which may be a personal computer, a server, or a network device, etc. ) to execute all or part of the steps of the methods of the embodiments of the present disclosure.
  • the aforementioned storage medium can be a non-transitory storage medium, including: U disk, removable hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk, etc.
  • a first element could be termed a second element, and, similarly, a second element could be termed a first element, so long as all occurrences of "the first element” were consistently renamed and all occurrences of "the first element” were named consistently.
  • the “second element” can be renamed consistently.
  • the first element and the second element are both elements, but may not be the same element.
  • the terms used in this application are used to describe the embodiments only and not to limit the claims. As used in the description of the embodiments and the claims, the singular forms "a” (a), “an” (an) and “the” (the) are intended to include the plural forms as well, unless the context clearly dictates otherwise. .
  • the term “and/or” as used in this application is meant to include any and all possible combinations of one or more of the associated listings.
  • the term “comprise” and its variations “comprises” and/or including and/or the like refer to stated features, integers, steps, operations, elements, and/or The presence of a component does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groupings of these.
  • an element qualified by the statement “comprising a" does not preclude the presence of additional identical elements in the process, method or apparatus that includes the element.
  • each embodiment may focus on the differences from other embodiments, and the same and similar parts between the various embodiments may refer to each other.
  • the methods, products, etc. disclosed in the embodiments if they correspond to the method section disclosed in the embodiments, reference may be made to the description of the method section for relevant parts.
  • the disclosed methods and products may be implemented in other ways.
  • the apparatus embodiments described above are only illustrative.
  • the division of units may only be a logical function division.
  • multiple units or components may be combined or may be Integration into another system, or some features can be ignored, or not implemented.
  • the shown or discussed mutual coupling or direct coupling or communication connection may be through some interfaces, indirect coupling or communication connection of devices or units, and may be in electrical, mechanical or other forms.
  • Units described as separate components may or may not be physically separated, and components shown as units may or may not be physical units, that is, may be located in one place, or may be distributed to multiple network units. This embodiment may be implemented by selecting some or all of the units according to actual needs.
  • each functional unit in the embodiment of the present disclosure may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit.
  • each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which contains at least one executable instruction for implementing the specified logical function .
  • the functions noted in the blocks may occur out of the order noted in the figures. For example, two or more blocks may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention se rapporte au domaine technique de l'optique, et concerne un procédé de fabrication d'une couche de conversion de lumière, comprenant les étapes suivantes : fourniture d'un motif de masque de résine photosensible dans une région de transmission de lumière d'une couche d'unité d'émission de lumière ; et fourniture d'une structure de grille métallique dans une région de la couche d'unité d'émission de lumière qui n'est pas recouverte par le motif de masque de résine photosensible. Le procédé de fabrication de la couche de conversion de lumière selon la présente invention peut fournir une isolation / un support efficace pour chaque pixel dans la couche de conversion de lumière, ce qui est avantageux pour la fonction normale de la couche de conversion de lumière, évitant autant que possible l'influence sur l'effet de conversion de lumière. La présente invention concerne également un procédé de fabrication d'un dispositif d'émission de lumière et un appareil électronique.
PCT/CN2021/108964 2020-08-24 2021-07-28 Procédé de fabrication de couche de conversion de lumière, procédé de fabrication d'élément d'émission de lumière, et appareil électronique WO2022042187A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010856886.5A CN114188497A (zh) 2020-08-24 2020-08-24 用于制作光转换层、发光器件的方法和电子装置
CN202010856886.5 2020-08-24

Publications (1)

Publication Number Publication Date
WO2022042187A1 true WO2022042187A1 (fr) 2022-03-03

Family

ID=80354492

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/108964 WO2022042187A1 (fr) 2020-08-24 2021-07-28 Procédé de fabrication de couche de conversion de lumière, procédé de fabrication d'élément d'émission de lumière, et appareil électronique

Country Status (2)

Country Link
CN (1) CN114188497A (fr)
WO (1) WO2022042187A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253202A (zh) * 2013-06-26 2014-12-31 纳米及先进材料研发院有限公司 一种光输出耦合设备及包括其的显示器或投影仪
CN106030836A (zh) * 2014-03-10 2016-10-12 欧司朗光电半导体有限公司 波长转换元件、包括波长转换元件的发光半导体部件、用于制造波长转换元件的方法和用于制造包括波长转换元件的发光半导体部件的方法
CN106206912A (zh) * 2015-05-29 2016-12-07 日亚化学工业株式会社 发光装置、覆盖部件的制造方法及发光装置的制造方法
CN109830186A (zh) * 2018-10-08 2019-05-31 友达光电股份有限公司 显示面板及其制造方法
US20190309912A1 (en) * 2016-08-24 2019-10-10 Nichia Corporation Light emitting device
WO2019219375A1 (fr) * 2018-05-14 2019-11-21 Osram Opto Semiconductors Gmbh Élément de conversion, composant optoélectronique, procédé de fabrication d'une pluralité d'éléments de conversion, procédé de fabrication d'une pluralité de composants optoélectroniques et procédé de fabrication d'un composant optoélectronique

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9018020B2 (en) * 2013-05-24 2015-04-28 The Boeing Company Shunt treatment in inverted and wafer bonded solar cells
CN109427826B (zh) * 2017-08-22 2020-10-30 中芯国际集成电路制造(上海)有限公司 图像传感器的制造方法
CN108257998A (zh) * 2018-01-23 2018-07-06 豪威科技(上海)有限公司 Cmos图像传感器及其制造方法
DE102018111595A1 (de) * 2018-05-15 2019-11-21 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253202A (zh) * 2013-06-26 2014-12-31 纳米及先进材料研发院有限公司 一种光输出耦合设备及包括其的显示器或投影仪
CN106030836A (zh) * 2014-03-10 2016-10-12 欧司朗光电半导体有限公司 波长转换元件、包括波长转换元件的发光半导体部件、用于制造波长转换元件的方法和用于制造包括波长转换元件的发光半导体部件的方法
CN106206912A (zh) * 2015-05-29 2016-12-07 日亚化学工业株式会社 发光装置、覆盖部件的制造方法及发光装置的制造方法
US20190309912A1 (en) * 2016-08-24 2019-10-10 Nichia Corporation Light emitting device
WO2019219375A1 (fr) * 2018-05-14 2019-11-21 Osram Opto Semiconductors Gmbh Élément de conversion, composant optoélectronique, procédé de fabrication d'une pluralité d'éléments de conversion, procédé de fabrication d'une pluralité de composants optoélectroniques et procédé de fabrication d'un composant optoélectronique
CN109830186A (zh) * 2018-10-08 2019-05-31 友达光电股份有限公司 显示面板及其制造方法

Also Published As

Publication number Publication date
CN114188497A (zh) 2022-03-15

Similar Documents

Publication Publication Date Title
US11502143B2 (en) Method of formimg a display device comprising a reflective cup-shaped pixel defining
US9640294B2 (en) Single-layer multi-point touch-control conductive film
TWI580577B (zh) Translucent conductive material
US9305965B2 (en) Solid-state imaging apparatus and method of manufacturing the same
US20150097996A1 (en) Optical element array, photoelectric conversion apparatus, and image pickup system
TW201504883A (zh) 觸控面板、觸控感測器及其製造方法
WO2022042187A1 (fr) Procédé de fabrication de couche de conversion de lumière, procédé de fabrication d'élément d'émission de lumière, et appareil électronique
US9349771B2 (en) Microlens forming method and solid-state image sensor manufacturing method
TW202240938A (zh) 發光模組、顯示模組、顯示螢幕和顯示器
WO2022042186A1 (fr) Procédés de fabrication de couche de conversion de lumière et dispositif d'émission de lumière, et dispositif électronique
KR20230156796A (ko) 표시 패널 및 표시 장치
WO2022042188A1 (fr) Procédé et dispositif pour fabriquer des couches de conversion de lumière
US10381332B2 (en) Fabrication method for emissive display with light management system
CN108227989B (zh) 触控基板及其制备方法、金属掩膜板以及显示装置
CN114141833A (zh) 显示模组及显示模组的制备方法
US20160253027A1 (en) Touch panel, manufacturing method thereof, and display device
CN107833903B (zh) 具有光管理***的发光显示器
US11355708B2 (en) Method for manufacturing display substrate, method for manufacturing mask plate and display device
WO2023070408A1 (fr) Panneau d'affichage et son procédé de fabrication, et dispositif d'affichage
CN105759562B (zh) 光刻掩膜板及其制作方法、光刻方法
CN111863860B (zh) 显示面板及其制作方法和显示装置
JP2011059370A (ja) ワイヤグリッド偏光子及びその作製方法
KR20110018482A (ko) 활성 영역 구조물의 형성방법
CN108531862B (zh) 一种金属掩膜板及其制备方法
US20230204191A1 (en) Light-emitting module, display module, display screen and display

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21860027

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21860027

Country of ref document: EP

Kind code of ref document: A1