WO2022042187A1 - Method for manufacturing light conversion layer, method for manufacturing light-emitting device, and electronic apparatus - Google Patents

Method for manufacturing light conversion layer, method for manufacturing light-emitting device, and electronic apparatus Download PDF

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Publication number
WO2022042187A1
WO2022042187A1 PCT/CN2021/108964 CN2021108964W WO2022042187A1 WO 2022042187 A1 WO2022042187 A1 WO 2022042187A1 CN 2021108964 W CN2021108964 W CN 2021108964W WO 2022042187 A1 WO2022042187 A1 WO 2022042187A1
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Prior art keywords
light
photoresist mask
layer
mask pattern
grid structure
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PCT/CN2021/108964
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French (fr)
Chinese (zh)
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刁鸿浩
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北京芯海视界三维科技有限公司
视觉技术创投私人有限公司
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Publication of WO2022042187A1 publication Critical patent/WO2022042187A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning

Definitions

  • the present application relates to the field of optical technology, for example, to a method for fabricating a light conversion layer, a method for fabricating a light-emitting device, and an electronic device.
  • a light conversion layer is usually used to support the display.
  • Embodiments of the present disclosure provide a method for fabricating a light conversion layer, a method for fabricating a light-emitting device, and an electronic device, so as to solve the problem that a process capable of providing effective isolation/support for each pixel in the light conversion layer has not yet appeared. It is conducive to the normal functioning of the light conversion layer and affects the technical problems of the light conversion effect.
  • setting the photoresist mask pattern may include:
  • disposing a photoresist mask pattern in the light-transmitting area of the light-emitting unit layer may include:
  • processing the photoresist mask layer to form a photoresist mask pattern may include:
  • photolithographic processing of the photoresist mask layer to form the photoresist mask pattern may include:
  • the part of the photoresist mask layer that is not used for forming the photoresist mask pattern is removed by a photolithography process.
  • a photoresist mask pattern is arranged on the light-emitting surface of the light-emitting unit layer.
  • providing a metal grid structure may include:
  • the metal grid structure is provided by physical vapor deposition (PVD), chemical vapor deposition (CVD), electroplating, ink jet printing, coating, implantation, or printing.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • electroplating ink jet printing, coating, implantation, or printing.
  • providing a metal grid structure may include:
  • a plating seed layer may also be arranged on the light emitting unit layer.
  • portions of the electroplating seed layer that are not plated with the metal grid structure may also be removed.
  • a cover layer may also be provided on the metal grid structure.
  • providing an overlay may include:
  • providing a metal grid structure may include:
  • the photoresist mask pattern may also be removed, and the light conversion material may be disposed on the metal grid structure.
  • providing the light conversion material may include:
  • the light converting material is disposed in the gaps of the metal grid structure.
  • the method for fabricating a light-emitting device includes the above-mentioned method for fabricating a light conversion layer.
  • the electronic device includes a processor and a memory storing program instructions, where the processor is configured to execute the above-mentioned method for fabricating a light conversion layer or a method for fabricating a light-emitting device when executing the program instructions .
  • FIG. 1A is a schematic flowchart of a method for fabricating a light conversion layer provided by an embodiment of the present disclosure
  • FIG. 1B , FIG. 1C , and FIG. 1D are schematic diagrams of principles for fabricating a light conversion layer provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of the principle of setting a photoresist mask pattern provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure
  • FIG. 5 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure
  • FIG. 6 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure.
  • FIG. 7A and FIG. 7B are schematic diagrams of the principle of setting an electroplating seed layer provided by an embodiment of the present disclosure.
  • FIG. 8 is a schematic diagram of another principle for setting an electroplating seed layer provided by an embodiment of the present disclosure.
  • FIG. 9 is a schematic diagram of the principle of setting a cover layer provided by an embodiment of the present disclosure.
  • FIG. 11 is a schematic diagram of the principle of setting a metal grid structure provided by an embodiment of the present disclosure.
  • FIG. 14 is a schematic structural diagram of an electronic device provided by an embodiment of the present disclosure.
  • 110 light-emitting unit layer; 111: light-emitting unit; 112: light-emitting unit light isolation structure; 113: light-transmitting area; 114: non-light-transmitting area; 120: photoresist mask pattern; 130: metal grid structure; mask layer; X: light exit surface; 150: electroplating seed layer; 160: cover layer; 161: light absorption layer; 163: light reflection layer; 170: gap; 180: gap; 190: light conversion material; 200: electron device; 210: processor; 220: memory; 230: communication interface; 240: bus.
  • an embodiment of the present disclosure provides a method for fabricating a light conversion layer, including:
  • S120 Disposing a metal grid structure in the area of the light emitting unit layer not covered by the photoresist mask pattern.
  • a photoresist mask pattern 120 may be provided in the light-transmitting area 113 of the light-emitting unit layer 110 ;
  • the metal grid structure 130 is disposed in the area not covered by the photoresist mask pattern 120 .
  • the shape of the metal grid structure 130 from the perspective of the front view (for example, the cross-sectional shape of the metal grid structure 130 in the dotted line in the figure, hereinafter simply referred to as: the shape of the metal grid structure 130 ) ) can be trapezoidal, for example: a regular trapezoid.
  • the shape of the metal grid structure 130 may be determined according to actual conditions such as process requirements.
  • the shape of part or all of the metal grid structure 130 may be a rectangle, a regular trapezoid, an inverted trapezoid, a triangle, a polygon, and the like.
  • a photoresist mask layer 140 is disposed on the light emitting unit layer 110 , and the photoresist mask layer 140 is processed to form a photoresist mask pattern 120 .
  • the photoresist mask pattern 120 is disposed on the light-transmitting area 113 of the light-emitting unit layer 110 , which may include:
  • a photoresist mask pattern 120 may be provided on all light-transmitting regions 113 of the light-emitting unit layer 110 .
  • a photoresist mask pattern 120 may be provided in a partial area of the light-transmitting area 113 of the light-emitting unit layer 110 .
  • processing the photoresist mask layer 140 to form the photoresist mask pattern 120 may include:
  • a photolithography process is performed on the photoresist mask layer 140 to form the photoresist mask pattern 120 .
  • performing a photolithography process on the photoresist mask layer 140 to form the photoresist mask pattern 120 may include:
  • the metal grid structure 130 is provided by PVD, CVD, electroplating, ink jet printing, coating, implantation, or printing.
  • the above-mentioned injection manner may be vacuum injection.
  • the above-mentioned printing method may be screen printing.
  • disposing the metal grid structure 130 may include:
  • a plating seed layer 150 may be disposed on the light emitting cell layer 110 .
  • a light-emitting unit optical isolation structure 112 may be disposed between two adjacent light-emitting units 111 .
  • the light-emitting unit light isolation structure 112 may include metal, for example, part or all of the light-emitting unit light isolation structure 112 is made of metal material.
  • a capping layer 160 may also be provided on the metal grid structure 130 .
  • the capping layer 160 may partially or fully surround the metal grid structure 130 .
  • a cover layer 160 is provided on the surface of the metal grid structure 130 .
  • disposing a light isolation layer may include: disposing a light absorbing layer 161 .
  • disposing an optical isolation layer may include disposing a light reflecting layer 163 .
  • the light reflectivity of the light reflection layer 163 and the light reflectivity of the metal grid structure 130 may be the same or different.
  • the light reflectivity of the light reflection layer 163 may be higher than that of the metal grid structure 130 .
  • the metal grid structure 130 is disposed in the gap 170 of the photoresist mask pattern 120 .
  • disposing the light conversion material 190 may include:
  • the light conversion material 190 is disposed in the gaps 180 of the metal grid structure 130 .
  • Disposing the electroplating seed layer 150 on the light emitting unit layer 110 for example: disposing the electroplating seed layer 150 on the light emitting surface X of the light emitting unit layer 110;
  • the light conversion material 190 is provided on the metal grid structure 130 provided with the capping layer 160 .
  • the method for fabricating a light-emitting device includes the above-mentioned method for fabricating a light conversion layer.
  • the light emitting device may be a light emitting module, a display screen, a display, and the like.
  • the display may include a display screen.
  • the display screen may include a light emitting module.
  • the light emitting module may include a light conversion layer.
  • the light emitting device may further include other components for supporting normal operation, such as at least one of components such as a communication interface, a frame, and a control circuit.
  • both 2D display and 3D display can be performed.
  • An embodiment of the present disclosure provides an electronic device, including a processor and a memory storing program instructions, the processor is configured to execute the above-mentioned method for fabricating a light conversion layer or fabricating a light-emitting device when executing the program instructions Methods.
  • the electronic device 200 may include:
  • a processor (processor) 210 and a memory (memory) 220 may also include a communication interface (Communication Interface) 230 and a bus 240 .
  • the processor 210 , the communication interface 230 , and the memory 220 can communicate with each other through the bus 240 .
  • Communication interface 230 may be used for information transfer.
  • the processor 210 may invoke the logic instructions in the memory 220 to execute the method for fabricating a light conversion layer or the method for fabricating a light emitting device of the above embodiments.
  • logic instructions in the memory 220 can be implemented in the form of software functional units and can be stored in a computer-readable storage medium when sold or used as an independent product.
  • the memory 220 may be used to store software programs and computer-executable programs, such as program instructions/modules corresponding to the methods in the embodiments of the present disclosure.
  • the processor 210 executes functional applications and data processing by executing program instructions/modules stored in the memory 220 , that is, implementing the method for fabricating a light conversion layer or a method for fabricating a light emitting device in the above method embodiments.
  • the memory 220 may include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required for at least one function; the storage data area may store data created according to the use of the terminal device, and the like.
  • the memory 220 may include high-speed random access memory, and may also include non-volatile memory.
  • the plurality of light emitting units 111 included in the light emitting unit layer 110 may include at least one of light emitting diodes (LEDs), mini (Mini) LEDs, and micro (Micro) LEDs.
  • the plurality of light emitting units 111 may include other light emitting devices other than LEDs, Mini LEDs, and Micro LEDs.
  • the device type of the light-emitting unit 111 may be determined according to actual conditions such as process requirements, for example: LED, Mini LED, Micro LED or other light-emitting devices.
  • the method for fabricating a light conversion layer, the method for fabricating a light-emitting device, and the electronic device provided by the embodiments of the present disclosure can provide effective isolation/support for each pixel in the light conversion layer, which is conducive to the normal functioning of the light conversion layer, Try to avoid the light conversion effect being affected.
  • Embodiments of the present disclosure provide a computer-readable storage medium storing computer-executable instructions, where the computer-executable instructions are configured to execute the above-mentioned method for fabricating a light conversion layer or a method for fabricating a light-emitting device.
  • An embodiment of the present disclosure provides a computer program product, including a computer program stored on a computer-readable storage medium, where the computer program includes program instructions, and when the program instructions are executed by a computer, the above-mentioned computer is caused to execute the above-mentioned method for making A method for a light conversion layer or a method for making a light emitting device.
  • the above-mentioned computer-readable storage medium may be a transient computer-readable storage medium, and may also be a non-transitory computer-readable storage medium.
  • the computer-readable storage medium and computer program product provided by the embodiments of the present disclosure can provide effective isolation/support for each pixel in the light conversion layer, which is conducive to the normal function of the light conversion layer, and avoids the light conversion effect being affected as much as possible.
  • the technical solutions of the embodiments of the present disclosure may be embodied in the form of a software product.
  • the computer software product is stored in a storage medium and includes at least one instruction to enable a computer device (which may be a personal computer, a server, or a network device, etc. ) to execute all or part of the steps of the methods of the embodiments of the present disclosure.
  • the aforementioned storage medium can be a non-transitory storage medium, including: U disk, removable hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk, etc.
  • a first element could be termed a second element, and, similarly, a second element could be termed a first element, so long as all occurrences of "the first element” were consistently renamed and all occurrences of "the first element” were named consistently.
  • the “second element” can be renamed consistently.
  • the first element and the second element are both elements, but may not be the same element.
  • the terms used in this application are used to describe the embodiments only and not to limit the claims. As used in the description of the embodiments and the claims, the singular forms "a” (a), “an” (an) and “the” (the) are intended to include the plural forms as well, unless the context clearly dictates otherwise. .
  • the term “and/or” as used in this application is meant to include any and all possible combinations of one or more of the associated listings.
  • the term “comprise” and its variations “comprises” and/or including and/or the like refer to stated features, integers, steps, operations, elements, and/or The presence of a component does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groupings of these.
  • an element qualified by the statement “comprising a" does not preclude the presence of additional identical elements in the process, method or apparatus that includes the element.
  • each embodiment may focus on the differences from other embodiments, and the same and similar parts between the various embodiments may refer to each other.
  • the methods, products, etc. disclosed in the embodiments if they correspond to the method section disclosed in the embodiments, reference may be made to the description of the method section for relevant parts.
  • the disclosed methods and products may be implemented in other ways.
  • the apparatus embodiments described above are only illustrative.
  • the division of units may only be a logical function division.
  • multiple units or components may be combined or may be Integration into another system, or some features can be ignored, or not implemented.
  • the shown or discussed mutual coupling or direct coupling or communication connection may be through some interfaces, indirect coupling or communication connection of devices or units, and may be in electrical, mechanical or other forms.
  • Units described as separate components may or may not be physically separated, and components shown as units may or may not be physical units, that is, may be located in one place, or may be distributed to multiple network units. This embodiment may be implemented by selecting some or all of the units according to actual needs.
  • each functional unit in the embodiment of the present disclosure may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit.
  • each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which contains at least one executable instruction for implementing the specified logical function .
  • the functions noted in the blocks may occur out of the order noted in the figures. For example, two or more blocks may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved.

Abstract

The present application relates to the technical field of optics, and provides a method for manufacturing a light conversion layer, comprising: providing a photoresist mask pattern in a light-transmissive region of a light-emitting unit layer; and providing a metal grid structure in a region of the light-emitting unit layer that is not covered by the photoresist mask pattern. The method for manufacturing the light conversion layer provided by the present application can provide effective isolation/support for each pixel in the light conversion layer, which is beneficial to the normal function of the light conversion layer, avoiding the influence on the light conversion effect to the greatest extent. Also disclosed in the present application are a method for manufacturing a light-emitting device and an electronic apparatus.

Description

用于制作光转换层、发光器件的方法和电子装置Methods and electronic devices for making light conversion layers, light emitting devices
本申请要求在2020年08月24日提交中国知识产权局、申请号为202010856886.5、发明名称为“用于制作光转换层、发光器件的方法和电子装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application filed on August 24, 2020, with the application number of 202010856886.5 and the invention titled "Method and Electronic Device for Making Light Conversion Layers and Light Emitting Devices", all of which are The contents are incorporated herein by reference.
技术领域technical field
本申请涉及光学技术领域，例如涉及一种用于制作光转换层的方法、用于制作发光器件的方法和电子装置。The present application relates to the field of optical technology, for example, to a method for fabricating a light conversion layer, a method for fabricating a light-emitting device, and an electronic device.
背景技术Background technique
在显示领域，目前通常使用到光转换层，以对显示进行支持。In the display field, a light conversion layer is usually used to support the display.
在实现本公开实施例的过程中，发现相关技术中至少存在如下问题：In the process of implementing the embodiments of the present disclosure, it is found that at least the following problems exist in the related art:
尚未出现能够为光转换层中的各像素提供有效隔离/支撑的工艺，不利于光转换层正常发挥功能，影响光转换效果。There is no process that can provide effective isolation/support for each pixel in the light conversion layer, which is not conducive to the normal function of the light conversion layer and affects the light conversion effect.
发明内容SUMMARY OF THE INVENTION
为了对披露的实施例的一些方面有基本的理解，下面给出了简单的概括。该概括不是泛泛评述，也不是要确定关键/重要组成元素或描绘这些实施例的保护范围，而是作为后面的详细说明的序言。In order to provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. This summary is not intended to be an extensive review, nor to identify key/critical elements or delineate the scope of protection of these embodiments, but rather serves as a prelude to the detailed description that follows.
本公开实施例提供了一种用于制作光转换层的方法、用于制作发光器件的方法和电子装置，以解决尚未出现能够为光转换层中的各像素提供有效隔离/支撑的工艺，不利于光转换层正常发挥功能，影响光转换效果的技术问题。Embodiments of the present disclosure provide a method for fabricating a light conversion layer, a method for fabricating a light-emitting device, and an electronic device, so as to solve the problem that a process capable of providing effective isolation/support for each pixel in the light conversion layer has not yet appeared. It is conducive to the normal functioning of the light conversion layer and affects the technical problems of the light conversion effect.
本公开实施例提供的用于制作光转换层的方法，包括：The method for fabricating the light conversion layer provided by the embodiments of the present disclosure includes:
在发光单元层的透光区域设置光阻掩膜图形；A photoresist mask pattern is arranged in the light-transmitting area of the light-emitting unit layer;
在发光单元层的未被光阻掩膜图形覆盖的区域设置金属栅格结构。A metal grid structure is arranged on the area of the light emitting unit layer that is not covered by the photoresist mask pattern.
在一些实施例中，设置光阻掩膜图形，可以包括：In some embodiments, setting the photoresist mask pattern may include:
在发光单元层设置光阻掩膜层，对光阻掩膜层进行处理以形成光阻掩膜图形。A photoresist mask layer is disposed on the light-emitting unit layer, and the photoresist mask layer is processed to form a photoresist mask pattern.
在一些实施例中，在发光单元层的透光区域设置光阻掩膜图形，可以包括：In some embodiments, disposing a photoresist mask pattern in the light-transmitting area of the light-emitting unit layer may include:
在发光单元层的部分或全部透光区域设置光阻掩膜图形。A photoresist mask pattern is arranged on part or all of the light-transmitting area of the light-emitting unit layer.
在一些实施例中，光阻掩膜图形还可以覆盖发光单元层的部分不透光区域。In some embodiments, the photoresist mask pattern may also cover part of the light-transmitting area of the light-emitting unit layer.
在一些实施例中，对光阻掩膜层进行处理以形成光阻掩膜图形，可以包括：In some embodiments, processing the photoresist mask layer to form a photoresist mask pattern may include:
对光阻掩膜层进行光刻处理以形成光阻掩膜图形。A photolithographic process is performed on the photoresist mask layer to form a photoresist mask pattern.
在一些实施例中，对光阻掩膜层进行光刻处理以形成光阻掩膜图形，可以包括：In some embodiments, photolithographic processing of the photoresist mask layer to form the photoresist mask pattern may include:
以光刻工艺去除光阻掩膜层中不用于形成光阻掩膜图形的部分。The part of the photoresist mask layer that is not used for forming the photoresist mask pattern is removed by a photolithography process.
在一些实施例中，设置光阻掩膜图形，可以包括：In some embodiments, setting the photoresist mask pattern may include:
在发光单元层的出光面设置光阻掩膜图形。A photoresist mask pattern is arranged on the light-emitting surface of the light-emitting unit layer.
在一些实施例中，设置金属栅格结构，可以包括：In some embodiments, providing a metal grid structure may include:
通过物理气相沉积(PVD)、化学气相沉积(CVD)、电镀、喷墨打印、涂布、注入、或印刷的方式设置金属栅格结构。The metal grid structure is provided by physical vapor deposition (PVD), chemical vapor deposition (CVD), electroplating, ink jet printing, coating, implantation, or printing.
在一些实施例中，设置金属栅格结构，可以包括：In some embodiments, providing a metal grid structure may include:
通过电镀的方式设置金属栅格结构。The metal grid structure is provided by means of electroplating.
在一些实施例中，在设置光阻掩膜图形之前，还可以在发光单元层设置电镀种子层。In some embodiments, before setting the photoresist mask pattern, a plating seed layer may also be arranged on the light emitting unit layer.
在一些实施例中，在电镀金属栅格结构之后，还可以去除电镀种子层的未电镀有金属栅格结构的部分。In some embodiments, after electroplating the metal grid structure, portions of the electroplating seed layer that are not plated with the metal grid structure may also be removed.
在一些实施例中，还可以在金属栅格结构设置覆盖层。In some embodiments, a cover layer may also be provided on the metal grid structure.
在一些实施例中，在金属栅格结构设置覆盖层，可以包括：In some embodiments, disposing a cover layer on the metal grid structure may include:
在金属栅格结构的表面设置覆盖层。A cover layer is provided on the surface of the metal grid structure.
在一些实施例中，设置覆盖层，可以包括：In some embodiments, providing an overlay may include:
设置疏水层、亲水层、隔离层中至少之一。At least one of a hydrophobic layer, a hydrophilic layer, and an isolation layer is provided.
在一些实施例中，设置金属栅格结构，可以包括：In some embodiments, providing a metal grid structure may include:
将金属栅格结构设置于光阻掩膜图形的间隙中。The metal grid structures are arranged in the gaps of the photoresist mask pattern.
在一些实施例中，还可以去除光阻掩膜图形，在金属栅格结构设置光转换材料。In some embodiments, the photoresist mask pattern may also be removed, and the light conversion material may be disposed on the metal grid structure.
在一些实施例中，设置光转换材料，可以包括：In some embodiments, providing the light conversion material may include:
将光转换材料设置于金属栅格结构的间隙中。The light converting material is disposed in the gaps of the metal grid structure.
本公开实施例提供的用于制作发光器件的方法，包括上述的用于制作光转换层的方法。The method for fabricating a light-emitting device provided by the embodiments of the present disclosure includes the above-mentioned method for fabricating a light conversion layer.
本公开实施例提供的电子装置，包括处理器和存储有程序指令的存储器，处理器被配置为在执行程序指令时，执行上述的用于制作光转换层的方法或用于制作发光器件的方法。The electronic device provided by the embodiments of the present disclosure includes a processor and a memory storing program instructions, where the processor is configured to execute the above-mentioned method for fabricating a light conversion layer or a method for fabricating a light-emitting device when executing the program instructions .
本公开实施例提供的用于制作光转换层的方法、用于制作发光器件的方法和电子装置，可以实现以下技术效果：The method for fabricating a light conversion layer, the method for fabricating a light-emitting device, and the electronic device provided by the embodiments of the present disclosure can achieve the following technical effects:
能够为光转换层中的各像素提供有效隔离/支撑，有利于光转换层正常发挥功能，尽量避免光转换效果受到影响。It can provide effective isolation/support for each pixel in the light conversion layer, which is conducive to the normal function of the light conversion layer, and avoids the light conversion effect from being affected as much as possible.
以上的总体描述和下文中的描述仅是示例性和解释性的，不用于限制本申请。The foregoing general description and the following description are exemplary and explanatory only and are not intended to limit the application.
附图说明Description of drawings
至少一个实施例通过与之对应的附图进行示例性说明，这些示例性说明和附图并不构成对实施例的限定，附图中具有相同参考数字标号的元件示为类似的元件，附图不构成比例限制，并且其中：At least one embodiment is exemplified by the accompanying drawings, which are not intended to limit the embodiments, elements with the same reference numerals in the drawings are shown as similar elements, and the accompanying drawings does not constitute a proportional limit, and where:
图1A是本公开实施例提供的用于制作光转换层的方法的流程示意图；1A is a schematic flowchart of a method for fabricating a light conversion layer provided by an embodiment of the present disclosure;
图1B、图1C、图1D是本公开实施例提供的用于制作光转换层的原理示意图；FIG. 1B , FIG. 1C , and FIG. 1D are schematic diagrams of principles for fabricating a light conversion layer provided by an embodiment of the present disclosure;
图2是本公开实施例提供的设置光阻掩膜图形的原理示意图；FIG. 2 is a schematic diagram of the principle of setting a photoresist mask pattern provided by an embodiment of the present disclosure;
图3是本公开实施例提供的设置光阻掩膜图形的另一原理示意图；3 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure;
图4是本公开实施例提供的设置光阻掩膜图形的另一原理示意图；4 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure;
图5是本公开实施例提供的设置光阻掩膜图形的另一原理示意图；5 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure;
图6是本公开实施例提供的设置光阻掩膜图形的另一原理示意图；6 is a schematic diagram of another principle for setting a photoresist mask pattern provided by an embodiment of the present disclosure;
图7A、图7B是本公开实施例提供的设置电镀种子层的原理示意图；FIG. 7A and FIG. 7B are schematic diagrams of the principle of setting an electroplating seed layer provided by an embodiment of the present disclosure;
图8是本公开实施例提供的设置电镀种子层的另一原理示意图；8 is a schematic diagram of another principle for setting an electroplating seed layer provided by an embodiment of the present disclosure;
图9是本公开实施例提供的设置覆盖层的原理示意图；FIG. 9 is a schematic diagram of the principle of setting a cover layer provided by an embodiment of the present disclosure;
图10A、图10B是本公开实施例提供的设置覆盖层的另一原理示意图；10A and 10B are schematic diagrams of another principle for setting a cover layer provided by an embodiment of the present disclosure;
图11是本公开实施例提供的设置金属栅格结构的原理示意图；FIG. 11 is a schematic diagram of the principle of setting a metal grid structure provided by an embodiment of the present disclosure;
图12是本公开实施例提供的用于制作光转换层的另一原理示意图；12 is a schematic diagram of another principle for fabricating a light conversion layer provided by an embodiment of the present disclosure;
图13是本公开实施例提供的用于制作光转换层的另一原理示意图；FIG. 13 is another schematic schematic diagram for fabricating a light conversion layer provided by an embodiment of the present disclosure;
图14是本公开实施例提供的电子装置的结构示意图。FIG. 14 is a schematic structural diagram of an electronic device provided by an embodiment of the present disclosure.
附图标记：Reference number:
110：发光单元层；111：发光单元；112：发光单元光隔离结构；113：透光区域；114：不透光区域；120：光阻掩膜图形；130：金属栅格结构；140：光阻掩膜层；X：出光面；150：电镀种子层；160：覆盖层；161：光吸收层；163：光反射层；170：间隙；180：间隙；190：光转换材料；200：电子装置；210：处理器；220：存储器；230：通信接口；240：总线。110: light-emitting unit layer; 111: light-emitting unit; 112: light-emitting unit light isolation structure; 113: light-transmitting area; 114: non-light-transmitting area; 120: photoresist mask pattern; 130: metal grid structure; mask layer; X: light exit surface; 150: electroplating seed layer; 160: cover layer; 161: light absorption layer; 163: light reflection layer; 170: gap; 180: gap; 190: light conversion material; 200: electron device; 210: processor; 220: memory; 230: communication interface; 240: bus.
具体实施方式detailed description
为了能够更加详尽地了解本公开实施例的特点与技术内容，下面结合附图对本公开实 施例的实现进行详细阐述，所附附图仅供参考说明之用，并非用来限定本公开实施例。在以下的技术描述中，为方便解释起见，通过多个细节以提供对所披露实施例的充分理解。然而，在没有这些细节的情况下，至少一个实施例仍然可以实施。在其它情况下，为简化附图，熟知的结构和装置可以简化展示。In order to be able to understand the features and technical contents of the embodiments of the present disclosure in more detail, the implementation of the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings, which are for reference only and are not used to limit the embodiments of the present disclosure. In the following technical description, for the convenience of explanation, numerous details are provided to provide a thorough understanding of the disclosed embodiments. However, at least one embodiment may be practiced without these details. In other instances, well-known structures and devices may be shown simplified in order to simplify the drawings.
参见图1A，本公开实施例提供了一种用于制作光转换层的方法，包括：Referring to FIG. 1A , an embodiment of the present disclosure provides a method for fabricating a light conversion layer, including:
S110：在发光单元层的透光区域设置光阻掩膜图形；S110: setting a photoresist mask pattern in the light-transmitting area of the light-emitting unit layer;
S120：在发光单元层的未被光阻掩膜图形覆盖的区域设置金属栅格结构。S120: Disposing a metal grid structure in the area of the light emitting unit layer not covered by the photoresist mask pattern.
这样，金属栅格结构能够为光转换层中的各像素(设置有光阻掩膜图形的位置可以用于设置像素，以实现光转换)提供有效隔离/支撑，有利于光转换层正常发挥功能，尽量避免光转换效果受到影响。In this way, the metal grid structure can provide effective isolation/support for each pixel in the light conversion layer (the position where the photoresist mask pattern is arranged can be used to arrange the pixels to realize light conversion), which is beneficial to the normal function of the light conversion layer. , try to avoid the light conversion effect from being affected.
参见图1B，在一些实施例中，基于本公开实施例提供的用于制作光转换层的方法，可以在发光单元层110的透光区域113设置光阻掩膜图形120；在发光单元层110的未被光阻掩膜图形120覆盖的区域设置金属栅格结构130。Referring to FIG. 1B , in some embodiments, based on the method for fabricating the light conversion layer provided by the embodiments of the present disclosure, a photoresist mask pattern 120 may be provided in the light-transmitting area 113 of the light-emitting unit layer 110 ; The metal grid structure 130 is disposed in the area not covered by the photoresist mask pattern 120 .
参见图1C，在一些实施例中，位于虚线箭头上侧的部分从俯视图的角度示例性地示出了金属栅格结构130的整体形状，例如：呈网格状。Referring to FIG. 1C , in some embodiments, the portion located on the upper side of the dashed arrow exemplarily shows the overall shape of the metal grid structure 130 from a top view, eg, a grid shape.
参见图1D，在一些实施例中，金属栅格结构130从主视图的角度的形状(例如：图中虚线内的金属栅格结构130的截面形状，以下简称为：金属栅格结构130的形状)可以呈梯形，例如：正梯形。Referring to FIG. 1D , in some embodiments, the shape of the metal grid structure 130 from the perspective of the front view (for example, the cross-sectional shape of the metal grid structure 130 in the dotted line in the figure, hereinafter simply referred to as: the shape of the metal grid structure 130 ) ) can be trapezoidal, for example: a regular trapezoid.
在一些实施例中，可以根据工艺需求等实际情况确定金属栅格结构130的形状，例如：部分或全部金属栅格结构130的形状可以为矩形、正梯形、倒梯形、三角形，多边形，等。In some embodiments, the shape of the metal grid structure 130 may be determined according to actual conditions such as process requirements. For example, the shape of part or all of the metal grid structure 130 may be a rectangle, a regular trapezoid, an inverted trapezoid, a triangle, a polygon, and the like.
在一些实施例中，金属栅格结构130可以包含金属，例如：金属栅格结构130中的部分或全部为金属材质。In some embodiments, the metal grid structure 130 may include metal, for example, part or all of the metal grid structure 130 is made of metal material.
参见图2，在一些实施例中，设置光阻掩膜图形120，可以包括：Referring to FIG. 2, in some embodiments, setting the photoresist mask pattern 120 may include:
在发光单元层110设置光阻掩膜层140，对光阻掩膜层140进行处理以形成光阻掩膜图形120。A photoresist mask layer 140 is disposed on the light emitting unit layer 110 , and the photoresist mask layer 140 is processed to form a photoresist mask pattern 120 .
参见图3，在一些实施例中，在发光单元层110的透光区域113设置光阻掩膜图形120，可以包括：Referring to FIG. 3 , in some embodiments, the photoresist mask pattern 120 is disposed on the light-transmitting area 113 of the light-emitting unit layer 110 , which may include:
在发光单元层110的部分或全部透光区域113设置光阻掩膜图形120。A photoresist mask pattern 120 is provided on part or all of the light-transmitting area 113 of the light-emitting unit layer 110 .
在一些实施例中，可以如图1B、图1C、图2中所示，在发光单元层110的全部透光区域113设置光阻掩膜图形120。可选地，可以如图3中所示，在发光单元层110的透光区域113中的部分区域设置光阻掩膜图形120。可选地，在发光单元层110的多个透光区 域113中，可以在一部分透光区域113的全部区域设置光阻掩膜图形120，在另一部分透光区域113的部分区域设置光阻掩膜图形120。In some embodiments, as shown in FIG. 1B , FIG. 1C , and FIG. 2 , a photoresist mask pattern 120 may be provided on all light-transmitting regions 113 of the light-emitting unit layer 110 . Optionally, as shown in FIG. 3 , a photoresist mask pattern 120 may be provided in a partial area of the light-transmitting area 113 of the light-emitting unit layer 110 . Optionally, in the plurality of light-transmitting regions 113 of the light-emitting unit layer 110 , a photoresist mask pattern 120 may be arranged in all regions of a part of the light-transmitting regions 113 , and a photoresist mask pattern 120 may be arranged in part of another part of the light-transmitting regions 113 . Film pattern 120 .
参见图4，在一些实施例中，光阻掩膜图形120还可以覆盖发光单元层110的部分不透光区域114。可选地，在发光单元层110的多个不透光区域114中，可以在一部分不透光区域114(例如：不透光区域114的部分区域)设置光阻掩膜图形120，在另一部分不透光区域114不设置光阻掩膜图形120。Referring to FIG. 4 , in some embodiments, the photoresist mask pattern 120 may also cover part of the light-opaque region 114 of the light emitting unit layer 110 . Optionally, in the plurality of opaque areas 114 of the light emitting unit layer 110, a photoresist mask pattern 120 may be provided in a part of the opaque areas 114 (for example: a partial area of the opaque area 114), and in another part The opaque area 114 is not provided with the photoresist mask pattern 120 .
参见图5，在一些实施例中，对光阻掩膜层140进行处理以形成光阻掩膜图形120，可以包括：Referring to FIG. 5, in some embodiments, processing the photoresist mask layer 140 to form the photoresist mask pattern 120 may include:
对光阻掩膜层140进行光刻处理以形成光阻掩膜图形120。A photolithography process is performed on the photoresist mask layer 140 to form the photoresist mask pattern 120 .
在一些实施例中，对光阻掩膜层140进行光刻处理以形成光阻掩膜图形120，可以包括：In some embodiments, performing a photolithography process on the photoresist mask layer 140 to form the photoresist mask pattern 120 may include:
以光刻工艺去除光阻掩膜层140中不用于形成光阻掩膜图形120的部分。Parts of the photoresist mask layer 140 that are not used for forming the photoresist mask patterns 120 are removed by a photolithography process.
参见图6，在一些实施例中，设置光阻掩膜图形120，可以包括：Referring to FIG. 6, in some embodiments, setting the photoresist mask pattern 120 may include:
在发光单元层110的出光面X设置光阻掩膜图形120。A photoresist mask pattern 120 is provided on the light-emitting surface X of the light-emitting unit layer 110 .
在一些实施例中，设置金属栅格结构130，可以包括：In some embodiments, disposing the metal grid structure 130 may include:
通过PVD、CVD、电镀、喷墨打印、涂布、注入、或印刷等方式设置金属栅格结构130。可选地，上述的注入方式可以为真空注入。可选地，上述的印刷方式可以为丝网印刷。The metal grid structure 130 is provided by PVD, CVD, electroplating, ink jet printing, coating, implantation, or printing. Optionally, the above-mentioned injection manner may be vacuum injection. Optionally, the above-mentioned printing method may be screen printing.
在一些实施例中，可以根据工艺需求等实际情况确定设置金属栅格结构130的方式。In some embodiments, the manner of disposing the metal grid structure 130 may be determined according to actual conditions such as process requirements.
在一些实施例中，设置金属栅格结构130，可以包括：In some embodiments, disposing the metal grid structure 130 may include:
通过电镀的方式设置金属栅格结构130。The metal grid structure 130 is provided by means of electroplating.
参见图7A，在一些实施例中，在设置光阻掩膜图形120之前，可以在发光单元层110设置电镀种子层150。Referring to FIG. 7A , in some embodiments, before disposing the photoresist mask pattern 120 , a plating seed layer 150 may be disposed on the light emitting cell layer 110 .
参见图7B，在一些实施例中，在发光单元层110所包括的多个发光单元111的部分或全部中，相邻的两个发光单元111之间可以设置有发光单元光隔离结构112。可选地，发光单元光隔离结构112可以包含金属，例如：发光单元光隔离结构112中的部分或全部为金属材质。Referring to FIG. 7B , in some embodiments, in some or all of the plurality of light-emitting units 111 included in the light-emitting unit layer 110 , a light-emitting unit optical isolation structure 112 may be disposed between two adjacent light-emitting units 111 . Optionally, the light-emitting unit light isolation structure 112 may include metal, for example, part or all of the light-emitting unit light isolation structure 112 is made of metal material.
参见图8，在一些实施例中，在电镀金属栅格结构130之后，还可以去除电镀种子层150的未电镀有金属栅格结构130的部分。Referring to FIG. 8 , in some embodiments, after the metal grid structure 130 is electroplated, portions of the electroplating seed layer 150 that are not plated with the metal grid structure 130 may also be removed.
参见图9，在一些实施例中，还可以在金属栅格结构130设置覆盖层160。可选地，覆盖层160可以部分或全部包围金属栅格结构130。Referring to FIG. 9 , in some embodiments, a capping layer 160 may also be provided on the metal grid structure 130 . Optionally, the capping layer 160 may partially or fully surround the metal grid structure 130 .
在一些实施例中，在金属栅格结构130设置覆盖层160，可以包括：In some embodiments, disposing the capping layer 160 on the metal grid structure 130 may include:
在金属栅格结构130的表面设置覆盖层160。A cover layer 160 is provided on the surface of the metal grid structure 130 .
在一些实施例中，设置覆盖层160，可以包括：设置疏水层、亲水层、隔离层中至少之一。可选地，设置隔离层，可以包括：设置光隔离层。In some embodiments, disposing the cover layer 160 may include disposing at least one of a hydrophobic layer, a hydrophilic layer, and an isolation layer. Optionally, setting the isolation layer may include: setting an optical isolation layer.
参见图10A，在一些实施例中，设置光隔离层，可以包括：设置光吸收层161。Referring to FIG. 10A , in some embodiments, disposing a light isolation layer may include: disposing a light absorbing layer 161 .
参见图10B，在一些实施例中，设置光隔离层，可以包括：设置光反射层163。可选地，光反射层163的光反射率与金属栅格结构130的光反射率可以相同或不同，例如：光反射层163的光反射率可以高于金属栅格结构130的光反射率。Referring to FIG. 10B , in some embodiments, disposing an optical isolation layer may include disposing a light reflecting layer 163 . Optionally, the light reflectivity of the light reflection layer 163 and the light reflectivity of the metal grid structure 130 may be the same or different. For example, the light reflectivity of the light reflection layer 163 may be higher than that of the metal grid structure 130 .
参见图11，在一些实施例中，设置金属栅格结构130，可以包括：Referring to FIG. 11 , in some embodiments, disposing a metal grid structure 130 may include:
将金属栅格结构130设置于光阻掩膜图形120的间隙170中。The metal grid structure 130 is disposed in the gap 170 of the photoresist mask pattern 120 .
参见图12，在一些实施例中，还可以去除光阻掩膜图形120，在金属栅格结构130设置光转换材料190。可选地，设置于金属栅格结构130的光转换材料190可以作为像素，以实现光转换。这样，金属栅格结构130以及光转换材料190可以形成光转换层。可选地，在设置有电镀种子层150的情况下，可以在去除电镀种子层150的未电镀有金属栅格结构130的部分之前去除光阻掩膜图形120。可选地，在未设置有电镀种子层150的情况下，可以直接去除光阻掩膜图形120。Referring to FIG. 12 , in some embodiments, the photoresist mask pattern 120 may also be removed, and the light conversion material 190 may be disposed on the metal grid structure 130 . Optionally, the light conversion material 190 disposed on the metal grid structure 130 can be used as a pixel to realize light conversion. In this way, the metal grid structure 130 and the light conversion material 190 may form a light conversion layer. Alternatively, where the plating seed layer 150 is provided, the photoresist mask pattern 120 may be removed before removing the portion of the plating seed layer 150 that is not plated with the metal grid structure 130 . Optionally, in the case where the plating seed layer 150 is not provided, the photoresist mask pattern 120 may be directly removed.
在一些实施例中，光阻掩膜图形120可以包括光刻胶、干膜光阻等。In some embodiments, the photoresist mask pattern 120 may include photoresist, dry film photoresist, or the like.
参见图13，在一些实施例中，设置光转换材料190，可以包括：Referring to FIG. 13, in some embodiments, disposing the light conversion material 190 may include:
将光转换材料190设置于金属栅格结构130的间隙180中。The light conversion material 190 is disposed in the gaps 180 of the metal grid structure 130 .
在一些实施例中，可以执行如下工艺步骤：In some embodiments, the following process steps may be performed:
在发光单元层110设置电镀种子层150，例如：在发光单元层110的出光面X设置电镀种子层150；Disposing the electroplating seed layer 150 on the light emitting unit layer 110, for example: disposing the electroplating seed layer 150 on the light emitting surface X of the light emitting unit layer 110;
在电镀种子层150设置光阻掩膜图形120；A photoresist mask pattern 120 is provided on the electroplating seed layer 150;
在未被光阻掩膜图形120覆盖的区域设置金属栅格结构130；disposing the metal grid structure 130 in the area not covered by the photoresist mask pattern 120;
在金属栅格结构130设置覆盖层160；disposing a cover layer 160 on the metal grid structure 130;
去除光阻掩膜图形120；removing the photoresist mask pattern 120;
去除电镀种子层150的未设置有金属栅格结构130的部分；removing the portion of the electroplating seed layer 150 that is not provided with the metal grid structure 130;
在设置有覆盖层160的金属栅格结构130设置光转换材料190。The light conversion material 190 is provided on the metal grid structure 130 provided with the capping layer 160 .
上述各工艺步骤的实现方式举例以及不同工艺步骤之间的执行关系(如先后顺序等)举例，可以参见前述的相关描述和附图，在此不再赘述。For examples of implementation manners of the above-mentioned process steps and examples of the execution relationship (such as sequence, etc.) between different process steps, reference may be made to the foregoing related descriptions and accompanying drawings, which will not be repeated here.
本公开实施例提供的用于制作发光器件的方法，包括上述的用于制作光转换层的方法。The method for fabricating a light-emitting device provided by the embodiments of the present disclosure includes the above-mentioned method for fabricating a light conversion layer.
在一些实施例中，发光器件可以是发光模组、显示屏、显示器等。可选地，显示器可 以包括显示屏。可选地，显示屏可以包括发光模组。可选地，发光模组可以包括光转换层。In some embodiments, the light emitting device may be a light emitting module, a display screen, a display, and the like. Optionally, the display may include a display screen. Optionally, the display screen may include a light emitting module. Optionally, the light emitting module may include a light conversion layer.
在一些实施例中，发光器件还可以包括用于支持正常运转的其他构件，例如：通信接口、框架、控制电路等构件中的至少之一。In some embodiments, the light emitting device may further include other components for supporting normal operation, such as at least one of components such as a communication interface, a frame, and a control circuit.
在一些实施例中，无论发光器件是发光模组、显示屏还是显示器，均可以进行2D显示，也可以进行3D显示。In some embodiments, regardless of whether the light emitting device is a light emitting module, a display screen or a display, both 2D display and 3D display can be performed.
本公开实施例提供了一种电子装置，包括处理器和存储有程序指令的存储器，处理器被配置为在执行程序指令时，执行上述的用于制作光转换层的方法或用于制作发光器件的方法。An embodiment of the present disclosure provides an electronic device, including a processor and a memory storing program instructions, the processor is configured to execute the above-mentioned method for fabricating a light conversion layer or fabricating a light-emitting device when executing the program instructions Methods.
参见图14，在一些实施例中，电子装置200可以包括：Referring to FIG. 14, in some embodiments, the electronic device 200 may include:
处理器(processor)210和存储器(memory)220，还可以包括通信接口(Communication Interface)230和总线240。其中，处理器210、通信接口230、存储器220可以通过总线240完成相互间的通信。通信接口230可以用于信息传输。处理器210可以调用存储器220中的逻辑指令，以执行上述实施例的用于制作光转换层的方法或用于制作发光器件的方法。A processor (processor) 210 and a memory (memory) 220 may also include a communication interface (Communication Interface) 230 and a bus 240 . The processor 210 , the communication interface 230 , and the memory 220 can communicate with each other through the bus 240 . Communication interface 230 may be used for information transfer. The processor 210 may invoke the logic instructions in the memory 220 to execute the method for fabricating a light conversion layer or the method for fabricating a light emitting device of the above embodiments.
此外，上述的存储器220中的逻辑指令可以通过软件功能单元的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。In addition, the above-mentioned logic instructions in the memory 220 can be implemented in the form of software functional units and can be stored in a computer-readable storage medium when sold or used as an independent product.
存储器220作为一种计算机可读存储介质，可用于存储软件程序、计算机可执行程序，如本公开实施例中的方法对应的程序指令/模块。处理器210通过运行存储在存储器220中的程序指令/模块，从而执行功能应用以及数据处理，即实现上述方法实施例中的用于制作光转换层的方法或用于制作发光器件的方法。As a computer-readable storage medium, the memory 220 may be used to store software programs and computer-executable programs, such as program instructions/modules corresponding to the methods in the embodiments of the present disclosure. The processor 210 executes functional applications and data processing by executing program instructions/modules stored in the memory 220 , that is, implementing the method for fabricating a light conversion layer or a method for fabricating a light emitting device in the above method embodiments.
存储器220可包括存储程序区和存储数据区，其中，存储程序区可存储操作***、至少一个功能所需的应用程序；存储数据区可存储根据终端设备的使用所创建的数据等。此外，存储器220可以包括高速随机存取存储器，还可以包括非易失性存储器。The memory 220 may include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required for at least one function; the storage data area may store data created according to the use of the terminal device, and the like. In addition, the memory 220 may include high-speed random access memory, and may also include non-volatile memory.
在一些实施例中，发光单元层110所包括的多个发光单元111可以包括：发光二极管(LED)、迷你(Mini)LED、微(Micro)LED中至少之一。可选地，多个发光单元111可以包括除了LED、Mini LED、Micro LED以外的其他发光器件。可选地，可以根据工艺需求等实际情况确定发光单元111的器件类型，例如：LED、Mini LED、Micro LED或其他发光器件。In some embodiments, the plurality of light emitting units 111 included in the light emitting unit layer 110 may include at least one of light emitting diodes (LEDs), mini (Mini) LEDs, and micro (Micro) LEDs. Optionally, the plurality of light emitting units 111 may include other light emitting devices other than LEDs, Mini LEDs, and Micro LEDs. Optionally, the device type of the light-emitting unit 111 may be determined according to actual conditions such as process requirements, for example: LED, Mini LED, Micro LED or other light-emitting devices.
本公开实施例提供的用于制作光转换层的方法、用于制作发光器件的方法和电子装置，能够为光转换层中的各像素提供有效隔离/支撑，有利于光转换层正常发挥功能，尽量避免光转换效果受到影响。The method for fabricating a light conversion layer, the method for fabricating a light-emitting device, and the electronic device provided by the embodiments of the present disclosure can provide effective isolation/support for each pixel in the light conversion layer, which is conducive to the normal functioning of the light conversion layer, Try to avoid the light conversion effect being affected.
本公开实施例提供了一种计算机可读存储介质，存储有计算机可执行指令，该计算机 可执行指令设置为执行上述的用于制作光转换层的方法或用于制作发光器件的方法。Embodiments of the present disclosure provide a computer-readable storage medium storing computer-executable instructions, where the computer-executable instructions are configured to execute the above-mentioned method for fabricating a light conversion layer or a method for fabricating a light-emitting device.
本公开实施例提供了一种计算机程序产品，包括存储在计算机可读存储介质上的计算机程序，该计算机程序包括程序指令，当该程序指令被计算机执行时，使上述计算机执行上述的用于制作光转换层的方法或用于制作发光器件的方法。An embodiment of the present disclosure provides a computer program product, including a computer program stored on a computer-readable storage medium, where the computer program includes program instructions, and when the program instructions are executed by a computer, the above-mentioned computer is caused to execute the above-mentioned method for making A method for a light conversion layer or a method for making a light emitting device.
上述的计算机可读存储介质可以是暂态计算机可读存储介质，也可以是非暂态计算机可读存储介质。The above-mentioned computer-readable storage medium may be a transient computer-readable storage medium, and may also be a non-transitory computer-readable storage medium.
本公开实施例提供的计算机可读存储介质和计算机程序产品，能够为光转换层中的各像素提供有效隔离/支撑，有利于光转换层正常发挥功能，尽量避免光转换效果受到影响。The computer-readable storage medium and computer program product provided by the embodiments of the present disclosure can provide effective isolation/support for each pixel in the light conversion layer, which is conducive to the normal function of the light conversion layer, and avoids the light conversion effect being affected as much as possible.
本公开实施例的技术方案可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括至少一个指令用以使得一台计算机设备(可以是个人计算机，服务器，或者网络设备等)执行本公开实施例的方法的全部或部分步骤。而前述的存储介质可以是非暂态存储介质，包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等多种可以存储程序代码的介质，也可以是暂态存储介质。The technical solutions of the embodiments of the present disclosure may be embodied in the form of a software product. The computer software product is stored in a storage medium and includes at least one instruction to enable a computer device (which may be a personal computer, a server, or a network device, etc. ) to execute all or part of the steps of the methods of the embodiments of the present disclosure. The aforementioned storage medium can be a non-transitory storage medium, including: U disk, removable hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk, etc. A medium that can store program codes, and can also be a transient storage medium.
以上描述和附图充分地示出了本公开的实施例，以使本领域技术人员能够实践它们。其他实施例可以包括结构的、逻辑的、电气的、过程的以及其他的改变。实施例仅代表可能的变化。除非明确要求，否则单独的部件和功能是可选的，并且操作的顺序可以变化。一些实施例的部分和特征可以被包括在或替换其他实施例的部分和特征。本公开实施例的范围包括权利要求书的整个范围，以及权利要求书的所有可获得的等同物。当用于本申请中时，虽然术语“第一”、“第二”等可能会在本申请中使用以描述各元件，但这些元件不应受到这些术语的限制。这些术语仅用于将一个元件与另一个元件区别开。比如，在不改变描述的含义的情况下，第一元件可以叫做第二元件，并且同样地，第二元件可以叫做第一元件，只要所有出现的“第一元件”一致重命名并且所有出现的“第二元件”一致重命名即可。第一元件和第二元件都是元件，但可以不是相同的元件。而且，本申请中使用的用词仅用于描述实施例并且不用于限制权利要求。如在实施例以及权利要求的描述中使用的，除非上下文清楚地表明，否则单数形式的“一个”(a)、“一个”(an)和“所述”(the)旨在同样包括复数形式。类似地，如在本申请中所使用的术语“和/或”是指包含一个或一个以上相关联的列出的任何以及所有可能的组合。另外，当用于本申请中时，术语“包括”(comprise)及其变型“包括”(comprises)和/或包括(comprising)等指陈述的特征、整体、步骤、操作、元素，和/或组件的存在，但不排除一个或一个以上其它特征、整体、步骤、操作、元素、组件和/或这些的分组的存在或添加。在没有更多限制的情况下，由语句“包括一个…”限定 的要素，并不排除在包括该要素的过程、方法或者设备中还存在另外的相同要素。本文中，每个实施例重点说明的可以是与其他实施例的不同之处，各个实施例之间相同相似部分可以互相参见。对于实施例公开的方法、产品等而言，如果其与实施例公开的方法部分相对应，那么相关之处可以参见方法部分的描述。The foregoing description and drawings sufficiently illustrate the embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural, logical, electrical, process, and other changes. The examples represent only possible variations. Unless expressly required, individual components and functions are optional and the order of operations may vary. Portions and features of some embodiments may be included in or substituted for those of other embodiments. The scope of the disclosed embodiments includes the full scope of the claims, along with all available equivalents of the claims. When used in this application, although the terms "first," "second," etc. may be used in this application to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without changing the meaning of the description, a first element could be termed a second element, and, similarly, a second element could be termed a first element, so long as all occurrences of "the first element" were consistently renamed and all occurrences of "the first element" were named consistently. The "second element" can be renamed consistently. The first element and the second element are both elements, but may not be the same element. Also, the terms used in this application are used to describe the embodiments only and not to limit the claims. As used in the description of the embodiments and the claims, the singular forms "a" (a), "an" (an) and "the" (the) are intended to include the plural forms as well, unless the context clearly dictates otherwise. . Similarly, the term "and/or" as used in this application is meant to include any and all possible combinations of one or more of the associated listings. Additionally, when used in this application, the term "comprise" and its variations "comprises" and/or including and/or the like refer to stated features, integers, steps, operations, elements, and/or The presence of a component does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groupings of these. Without further limitation, an element qualified by the statement "comprising a..." does not preclude the presence of additional identical elements in the process, method or apparatus that includes the element. Herein, each embodiment may focus on the differences from other embodiments, and the same and similar parts between the various embodiments may refer to each other. For the methods, products, etc. disclosed in the embodiments, if they correspond to the method section disclosed in the embodiments, reference may be made to the description of the method section for relevant parts.
本领域技术人员可以意识到，结合本文中所公开的实施例描述的各示例的单元及算法步骤，能够以电子硬件、或者计算机软件和电子硬件的结合来实现。这些功能究竟以硬件还是软件方式来执行，可以取决于技术方案的特定应用和设计约束条件。本领域技术人员可以对每个特定的应用来使用不同方法以实现所描述的功能，但是这种实现不应认为超出本公开实施例的范围。本领域技术人员可以清楚地了解到，为描述的方便和简洁，上述描述的***、装置和单元的工作过程，可以参考前述方法实施例中的对应过程，在此不再赘述。Those skilled in the art can realize that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software may depend on the specific application and design constraints of the technical solution. Skilled artisans may use different methods for implementing the described functionality for each particular application, but such implementations should not be considered beyond the scope of the disclosed embodiments. Those skilled in the art can clearly understand that, for the convenience and brevity of the description, for the working process of the above-described systems, devices and units, reference may be made to the corresponding processes in the foregoing method embodiments, which will not be repeated here.
本文所披露的实施例中，所揭露的方法、产品(包括但不限于装置、设备等)，可以通过其它的方式实现。例如，以上所描述的装置实施例仅仅是示意性的，例如，单元的划分，可以仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，例如多个单元或组件可以结合或者可以集成到另一个***，或一些特征可以忽略，或不执行。另外，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。作为分离部件说明的单元可以是或者也可以不是物理上分开的，作为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例。另外，在本公开实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。In the embodiments disclosed herein, the disclosed methods and products (including but not limited to apparatuses, devices, etc.) may be implemented in other ways. For example, the apparatus embodiments described above are only illustrative. For example, the division of units may only be a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components may be combined or may be Integration into another system, or some features can be ignored, or not implemented. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be through some interfaces, indirect coupling or communication connection of devices or units, and may be in electrical, mechanical or other forms. Units described as separate components may or may not be physically separated, and components shown as units may or may not be physical units, that is, may be located in one place, or may be distributed to multiple network units. This embodiment may be implemented by selecting some or all of the units according to actual needs. In addition, each functional unit in the embodiment of the present disclosure may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit.
在附图中，考虑到清楚性和描述性，可以夸大元件或层等结构的宽度、长度、厚度等。当元件或层等结构被称为“设置在”(或“安装在”、“铺设在”、“贴合在”、“涂布在”等类似描述)另一元件或层“上方”或“上”时，该元件或层等结构可以直接“设置在”上述的另一元件或层“上方”或“上”，或者可以存在与上述的另一元件或层之间的中间元件或层等结构，甚至有一部分嵌入上述的另一元件或层。In the drawings, the width, length, thickness, etc. of structures such as elements or layers may be exaggerated for clarity and descriptiveness. When an element or layer or the like is referred to as being "disposed on" (or "mounted on," "laying on," "adhering to," "coating on," and the like) another element or layer "over" or "above" When referring to “on”, the element or layer and other structures may be directly “disposed on” “above” or “on” the above-mentioned another element or layer, or there may be intervening elements or layers between the above-mentioned another element or layer, etc. structure, even partially embedded in another element or layer as described above.
附图中的流程图和框图显示了根据本公开实施例的***、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，上述模块、程序段或代码的一部分包含至少一个用于实现规定的逻辑功能的可执行指令。在有些作为替换的实现中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个或更多的方框实际上可以基本并行地执行，它 们有时也可以按相反的顺序执行，这可以依所涉及的功能而定。在附图中的流程图和框图所对应的描述中，不同的方框所对应的操作或步骤也可以以不同于描述中所披露的顺序发生，有时不同的操作或步骤之间不存在特定的顺序。例如，两个或更多的操作或步骤实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这可以依所涉及的功能而定。框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的***来实现，或者可以用专用硬件与计算机指令的组合来实现。以上所述方式可以应用于附图及其对应的描述，也可以应用于不与附图对应的描述。The flowchart and block diagrams in the Figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to embodiments of the present disclosure. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which contains at least one executable instruction for implementing the specified logical function . In some alternative implementations, the functions noted in the blocks may occur out of the order noted in the figures. For example, two or more blocks may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. In the descriptions corresponding to the flowcharts and block diagrams in the accompanying drawings, operations or steps corresponding to different blocks may also occur in different sequences than those disclosed in the description, and sometimes there is no specific relationship between different operations or steps. order. For example, two or more operations or steps may, in fact, be performed substantially concurrently, or they may sometimes be performed in the reverse order, depending upon the functionality involved. Each block of the block diagrams and/or flowchart illustrations, and combinations of blocks in the block diagrams and/or flowchart illustrations, can be implemented in special purpose hardware-based systems that perform the specified functions or actions, or special purpose hardware implemented in combination with computer instructions. The above-mentioned manners can be applied to the drawings and their corresponding descriptions, and can also be applied to descriptions that do not correspond to the drawings.

Claims (19)

  1. 一种用于制作光转换层的方法，包括：A method for making a light conversion layer, comprising:
    在发光单元层的透光区域设置光阻掩膜图形；A photoresist mask pattern is arranged in the light-transmitting area of the light-emitting unit layer;
    在所述发光单元层的未被所述光阻掩膜图形覆盖的区域设置金属栅格结构。A metal grid structure is provided in the area of the light emitting unit layer not covered by the photoresist mask pattern.
  2. 根据权利要求1所述的方法，其中，设置所述光阻掩膜图形，包括：The method of claim 1, wherein setting the photoresist mask pattern comprises:
    在所述发光单元层设置光阻掩膜层，对所述光阻掩膜层进行处理以形成所述光阻掩膜图形。A photoresist mask layer is disposed on the light-emitting unit layer, and the photoresist mask layer is processed to form the photoresist mask pattern.
  3. 根据权利要求2所述的方法，其中，在发光单元层的透光区域设置光阻掩膜图形，包括：The method according to claim 2, wherein arranging a photoresist mask pattern in the light-transmitting area of the light-emitting unit layer comprises:
    在所述发光单元层的部分或全部透光区域设置所述光阻掩膜图形。The photoresist mask pattern is arranged in part or all of the light-transmitting area of the light-emitting unit layer.
  4. 根据权利要求3所述的方法，其中，所述光阻掩膜图形还覆盖所述发光单元层的部分不透光区域。4. The method of claim 3, wherein the photoresist mask pattern further covers a part of the opaque area of the light emitting unit layer.
  5. 根据权利要求2所述的方法，其中，对所述光阻掩膜层进行处理以形成所述光阻掩膜图形，包括：The method of claim 2, wherein processing the photoresist mask layer to form the photoresist mask pattern comprises:
    对所述光阻掩膜层进行光刻处理以形成所述光阻掩膜图形。A photolithography process is performed on the photoresist mask layer to form the photoresist mask pattern.
  6. 根据权利要求5所述的方法，其中，对所述光阻掩膜层进行光刻处理以形成所述光阻掩膜图形，包括：6. The method of claim 5, wherein photolithographic processing of the photoresist mask layer to form the photoresist mask pattern comprises:
    以光刻工艺去除所述光阻掩膜层中不用于形成所述光阻掩膜图形的部分。Parts of the photoresist mask layer that are not used for forming the photoresist mask patterns are removed by a photolithography process.
  7. 根据权利要求1所述的方法，其中，设置所述光阻掩膜图形，包括：The method of claim 1, wherein setting the photoresist mask pattern comprises:
    在所述发光单元层的出光面设置所述光阻掩膜图形。The photoresist mask pattern is arranged on the light-emitting surface of the light-emitting unit layer.
  8. 根据权利要求1至7任一项所述的方法，其中，设置所述金属栅格结构，包括：The method according to any one of claims 1 to 7, wherein disposing the metal grid structure comprises:
    通过物理气相沉积PVD、化学气相沉积CVD、电镀、喷墨打印、涂布、注入、或印刷的方式设置所述金属栅格结构。The metal grid structure is provided by physical vapor deposition PVD, chemical vapor deposition CVD, electroplating, ink jet printing, coating, injection, or printing.
  9. 根据权利要求8所述的方法，其中，设置所述金属栅格结构，包括：The method of claim 8, wherein disposing the metal grid structure comprises:
    通过电镀的方式设置所述金属栅格结构。The metal grid structure is provided by means of electroplating.
  10. 根据权利要求9所述的方法，还包括：The method of claim 9, further comprising:
    在设置所述光阻掩膜图形之前，在所述发光单元层设置电镀种子层。Before setting the photoresist mask pattern, a plating seed layer is arranged on the light emitting unit layer.
  11. 根据权利要求10所述的方法，还包括：The method of claim 10, further comprising:
    在电镀所述金属栅格结构之后，去除所述电镀种子层的未电镀有所述金属栅格结构的部分。After electroplating the metal grid structure, portions of the electroplating seed layer that are not plated with the metal grid structure are removed.
  12. 根据权利要求8至11任一项所述的方法，还包括：在所述金属栅格结构设置覆盖 层。The method according to any one of claims 8 to 11, further comprising: providing a cover layer on the metal grid structure.
  13. 根据权利要求12所述的方法，其中，在所述金属栅格结构设置所述覆盖层，包括：The method according to claim 12, wherein disposing the cover layer on the metal grid structure comprises:
    在所述金属栅格结构的表面设置所述覆盖层。The cover layer is provided on the surface of the metal grid structure.
  14. 根据权利要求13所述的方法，其中，设置所述覆盖层，包括：14. The method of claim 13, wherein disposing the cover layer comprises:
    设置疏水层、亲水层、隔离层中至少之一。At least one of a hydrophobic layer, a hydrophilic layer, and an isolation layer is provided.
  15. 根据权利要求8至11任一项所述的方法，其中，设置所述金属栅格结构，包括：The method according to any one of claims 8 to 11, wherein disposing the metal grid structure comprises:
    将所述金属栅格结构设置于所述光阻掩膜图形的间隙中。The metal grid structure is disposed in the gap of the photoresist mask pattern.
  16. 根据权利要求1所述的方法，还包括：The method of claim 1, further comprising:
    去除所述光阻掩膜图形；removing the photoresist mask pattern;
    在所述金属栅格结构设置光转换材料。A light conversion material is provided on the metal grid structure.
  17. 根据权利要求16所述的方法，其中，设置所述光转换材料，包括：17. The method of claim 16, wherein disposing the light converting material comprises:
    将所述光转换材料设置于所述金属栅格结构的间隙中。The light conversion material is disposed in the gaps of the metal grid structure.
  18. 一种用于制作发光器件的方法，包括如权利要求1至17任一项所述的方法。A method for fabricating a light emitting device, comprising the method of any one of claims 1 to 17.
  19. 一种电子装置，包括处理器和存储有程序指令的存储器，所述处理器被配置为在执行所述程序指令时，执行如权利要求1至18任一项所述的方法。An electronic device comprising a processor and a memory storing program instructions, the processor being configured to perform the method of any one of claims 1 to 18 when executing the program instructions.
PCT/CN2021/108964 2020-08-24 2021-07-28 Method for manufacturing light conversion layer, method for manufacturing light-emitting device, and electronic apparatus WO2022042187A1 (en)

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