WO2022025161A1 - シリコンエッチング液、並びに該エッチング液を用いたシリコンデバイスの製造方法およびシリコン基板の処理方法 - Google Patents
シリコンエッチング液、並びに該エッチング液を用いたシリコンデバイスの製造方法およびシリコン基板の処理方法 Download PDFInfo
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- WO2022025161A1 WO2022025161A1 PCT/JP2021/028028 JP2021028028W WO2022025161A1 WO 2022025161 A1 WO2022025161 A1 WO 2022025161A1 JP 2021028028 W JP2021028028 W JP 2021028028W WO 2022025161 A1 WO2022025161 A1 WO 2022025161A1
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- silicon
- formula
- quaternary ammonium
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- etching
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 199
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 199
- 239000010703 silicon Substances 0.000 title claims abstract description 199
- 238000005530 etching Methods 0.000 title claims abstract description 164
- 239000000758 substrate Substances 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000007788 liquid Substances 0.000 title abstract description 8
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 51
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims abstract description 46
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 42
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 125000003118 aryl group Chemical group 0.000 claims abstract description 10
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims abstract description 8
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 7
- 125000001309 chloro group Chemical group Cl* 0.000 claims abstract description 7
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 6
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 39
- 125000000217 alkyl group Chemical group 0.000 claims description 26
- 239000002210 silicon-based material Substances 0.000 claims description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 15
- 125000001424 substituent group Chemical group 0.000 claims description 14
- 125000000547 substituted alkyl group Chemical group 0.000 abstract 2
- 239000000243 solution Substances 0.000 description 72
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 229910052814 silicon oxide Inorganic materials 0.000 description 30
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 22
- -1 hydroxyethyl group Chemical group 0.000 description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 13
- 239000003513 alkali Substances 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 238000011282 treatment Methods 0.000 description 8
- 150000001768 cations Chemical class 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 6
- 150000001450 anions Chemical class 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 4
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 4
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 4
- RKMJXTWHATWGNX-UHFFFAOYSA-N decyltrimethylammonium ion Chemical class CCCCCCCCCC[N+](C)(C)C RKMJXTWHATWGNX-UHFFFAOYSA-N 0.000 description 3
- VICYBMUVWHJEFT-UHFFFAOYSA-N dodecyltrimethylammonium ion Chemical class CCCCCCCCCCCC[N+](C)(C)C VICYBMUVWHJEFT-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- HTKPDYSCAPSXIR-UHFFFAOYSA-N octyltrimethylammonium ion Chemical class CCCCCCCC[N+](C)(C)C HTKPDYSCAPSXIR-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 2
- RLGQACBPNDBWTB-UHFFFAOYSA-N cetyltrimethylammonium ion Chemical class CCCCCCCCCCCCCCCC[N+](C)(C)C RLGQACBPNDBWTB-UHFFFAOYSA-N 0.000 description 2
- 229940075419 choline hydroxide Drugs 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004255 ion exchange chromatography Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- GLFDLEXFOHUASB-UHFFFAOYSA-N trimethyl(tetradecyl)azanium Chemical class CCCCCCCCCCCCCC[N+](C)(C)C GLFDLEXFOHUASB-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 1
- RKTGAWJWCNLSFX-UHFFFAOYSA-M bis(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(C)CCO RKTGAWJWCNLSFX-UHFFFAOYSA-M 0.000 description 1
- IUNCEDRRUNZACO-UHFFFAOYSA-N butyl(trimethyl)azanium Chemical class CCCC[N+](C)(C)C IUNCEDRRUNZACO-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- PLMFYJJFUUUCRZ-UHFFFAOYSA-M decyltrimethylammonium bromide Chemical compound [Br-].CCCCCCCCCC[N+](C)(C)C PLMFYJJFUUUCRZ-UHFFFAOYSA-M 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- YOMFVLRTMZWACQ-UHFFFAOYSA-N ethyltrimethylammonium Chemical class CC[N+](C)(C)C YOMFVLRTMZWACQ-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- XTPRURKTXNFVQT-UHFFFAOYSA-N hexyl(trimethyl)azanium Chemical class CCCCCC[N+](C)(C)C XTPRURKTXNFVQT-UHFFFAOYSA-N 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004811 liquid chromatography Methods 0.000 description 1
- 238000011866 long-term treatment Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical class CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical class CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical class C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical class CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
Definitions
- the present invention relates to a silicon etching solution used in a surface treatment or etching process when manufacturing various silicon devices.
- the present invention also relates to a method for manufacturing a silicon device using the etching solution.
- the present invention also relates to a method for processing a silicon substrate containing a silicon material using the etching solution.
- Silicon etching is used in various processes in the manufacturing process of semiconductor devices.
- processing processes using silicon have been widely used in the process of stacking memory cells and making logic devices three-dimensional, and the silicon etching used at that time is smooth after etching due to the densification of the device.
- Etching accuracy, etching selectivity with other materials, etc. are becoming stricter.
- it is also applied to processes such as thinning of wafers.
- Such various silicon devices are required to be highly integrated, miniaturized, highly sensitive, and highly functional depending on the application, and in order to satisfy these requirements, microfabrication is performed in the manufacture of these silicon devices.
- Silicon etching is regarded as important as a technology.
- silicon etching includes etching with a fluoroacid-nitric acid aqueous solution and etching using an alkali.
- the former etching with a fluoroacid-nitrate aqueous solution can be isotropically etched regardless of the crystal orientation of silicon, and can be uniformly etched on silicon single crystal, polysilicon, and amorphous silicon.
- the fluoroacid-nitrite aqueous solution oxidizes silicon and etches it as a silicon oxide film, there is no etching selectivity for silicon with respect to the silicon oxide film, so it should be used in semiconductor manufacturing processes that leave the silicon oxide film. I could't.
- alkali has the feature that not only the etching selectivity of silicon for the silicon nitride film is high, but also the etching selectivity of silicon for the silicon oxide film is high, so that it can be used in the semiconductor manufacturing process in which the silicon oxide film remains.
- high selectivity means a property that exhibits particularly high etching properties of silicon with respect to a specific member. For example, when etching a substrate having a silicon film of silicon single crystal, polysilicon, or amorphous silicon and another film (for example, a silicon oxide film), only the silicon film is etched and the silicon oxide film is not etched. , It is said that the etching selectivity of silicon with respect to the silicon oxide film is high.
- the alkaline etching solution has selectivity for the silicon oxide film and the silicon nitride film, and selectively etches the silicon film.
- TMAH tetramethylammonium hydroxide
- KOH or TMAH which has low toxicity and is easy to handle, is preferably used alone.
- TMAH is more preferably used in consideration of the mixing of metal impurities and the etching selectivity with the silicon oxide film.
- Patent Document 1 discloses an etching solution for a silicon substrate for a solar cell, which contains alkali hydroxide, water, and a polyalkylene oxide alkyl ether.
- Patent Document 2 discloses an etching solution for a silicon substrate for a solar cell containing an alkaline compound, an organic solvent, a surfactant and water.
- TMAH is exemplified as an example of an alkaline compound
- polyalkylene oxide alkyl ether is exemplified as an organic solvent, but the alkaline compounds actually used are sodium hydroxide and potassium hydroxide.
- Patent Document 3 discloses an alkaline etching solution capable of selectively removing silicon with respect to silicon-germanium.
- Japanese Unexamined Patent Publication No. 2010-141139 Japanese Unexamined Patent Publication No. 2012-227304 Japanese Unexamined Patent Publication No. 2019-050364
- the alkaline etching solution has the above-mentioned advantages, the etching rate of the 111th surface of silicon is low, and sometimes pyramid-shaped hillocks surrounded by the 111th surface occur, resulting in a reduction in smoothness during silicon etching. Alternatively, there is a problem that an etching residue is generated.
- it is possible to solve the above problems by increasing the alkali concentration it is preferable to reduce the alkali concentration in the silicon etching solution in consideration of cost, safety, and ease of waste liquid treatment.
- pyramid-shaped hilok surrounded by 111 surfaces is likely to occur, so that the etching smoothness is lowered and the surface is likely to be roughened.
- the etching selectivity with the silicon oxide film represents a value obtained by dividing the etching rate of silicon by the etching rate of the silicon oxide film.
- the etching solution described in Patent Document 3 is a chemical solution capable of selectively removing silicon from silicon-germanium, and there is no description about smooth etching of silicon.
- the first invention is A quaternary ammonium hydroxide represented by the following formula (1), a quaternary ammonium salt represented by the following formula (2), and water, and a quaternary ammonium salt represented by the above formula (2).
- the present invention relates to a silicon etching solution, wherein the concentration is more than 1% by mass and 50% by mass or less.
- R 1 , R 2 , R 3 and R 4 are an alkyl group, an aryl group or a benzyl group which may have a substituent, and even if they are the same group, they are different.
- R 5 , R 6 , R 7 and R 8 are alkyl groups having 1 to 16 carbon atoms which may have a substituent, and even if they are the same group, they are different. It may be a group.
- X is a BF 4 , a fluorine atom, a chlorine atom or a bromine atom.
- the concentration of the quaternary ammonium hydroxide represented by the above formula (1) is preferably 0.05 mol / L or more and 1.1 mol / L or less.
- the total number of carbons in the molecule of the quaternary ammonium salt represented by the above formula (2) is 4 or more and 12 or less.
- the second invention is a method for treating a silicon substrate containing at least one silicon material selected from the group consisting of a silicon wafer, a silicon single crystal film, a polysilicon film, and an amorphous silicon film.
- a method for processing a silicon substrate which comprises a step of etching the silicon material using the silicon etching solution of the present invention.
- a third aspect of the present invention is a method for manufacturing a silicon device having at least one silicon material selected from the group consisting of a silicon wafer, a silicon single crystal film, a polysilicon film, and an amorphous silicon film.
- a first method for manufacturing a silicon device which comprises a step of etching the silicon material using the silicon etching solution of the present invention.
- the silicon etching solution of the present invention is at least one silicon material selected from the group consisting of a silicon wafer, a silicon single crystal film, a polysilicon film, and an amorphous silicon film while keeping the concentration of quaternary ammonium hydroxide low.
- the surface of the silicon substrate containing silicon can be etched smoothly, and the silicon etching process having a high selectivity with the silicon oxide film becomes possible.
- the silicon etching solution of the present invention is particularly useful as a silicon etching solution for smoothly etching a silicon surface (100 surfaces).
- the embodiments of the present invention will be described in detail below, but these explanations are examples (representative examples) of the embodiments of the present invention, and the present invention is not limited to these contents as long as the gist thereof is not exceeded.
- the numerical range represented by using "-" means a range including the numerical values before and after "-" as the lower limit value and the upper limit value, and "A to B” means A or more. It means that it is B or less.
- the present invention includes the following items and the like.
- Item 1 Quaternary ammonium hydroxide represented by the following formula (1), a quaternary ammonium salt represented by the following formula (2), and water, and quaternary ammonium represented by the above formula (2).
- a silicon etching solution characterized in that the salt concentration exceeds 1% by mass and is 50% by mass or less.
- R 1 , R 2 , R 3 and R 4 are an alkyl group, an aryl group or a benzyl group which may have a substituent, and even if they are the same group, they are different.
- R 5 , R 6 , R 7 and R 8 are alkyl groups having 1 to 16 carbon atoms which may have a substituent, and even if they are the same group, they are different. It may be a group.
- X is a BF 4 , a fluorine atom, a chlorine atom, or a bromine atom.
- Item 2 The silicon etching solution according to Item 1, wherein the concentration of the quaternary ammonium hydroxide represented by the formula (1) is 0.05 mol / L or more and 1.1 mol / L or less.
- Item 3 The silicon etching solution according to Item 1 or 2, wherein the total number of carbons in the molecule of the quaternary ammonium salt represented by the formula (2) is 4 or more and 12 or less.
- Item 4 A method for processing a silicon substrate containing at least one silicon material selected from the group consisting of a silicon wafer, a silicon single crystal film, a polysilicon film, and an amorphous silicon film.
- a method for treating a silicon substrate which comprises a step of etching the silicon material using the silicon etching solution according to any one of Items 1 to 3.
- Item 5 A method for manufacturing a silicon device having at least one silicon material selected from the group consisting of a silicon wafer, a silicon single crystal film, a polysilicon film, and an amorphous silicon film.
- a method for manufacturing a silicon device which comprises a step of etching the silicon material using the silicon etching solution according to any one of Items 1 to 3.
- the isotropic silicon etching solution of the present invention contains a quaternary ammonium hydroxide represented by the following formula (1), a quaternary ammonium salt represented by the following formula (2), and water, and has the above formula ( It is a silicon etching solution characterized in that the concentration of the quaternary ammonium salt shown in 2) exceeds 1% by mass and is 50% by mass or less.
- R 1 , R 2 , R 3 and R 4 are an alkyl group, an aryl group or a benzyl group which may have a substituent, and may be the same group but different groups. May be.
- R 5 , R 6 , R 7 and R 8 are alkyl groups having 1 to 16 carbon atoms which may have substituents, and even if they are the same group, they are different groups. May be.
- X is BF 4 , a fluorine atom, a chlorine atom, or a bromine atom.
- the alkyl group is preferably an alkyl group having 1 or more carbon atoms and 4 or less carbon atoms
- the aryl group is preferably an aryl group having 6 or more carbon atoms and 10 or less carbon atoms.
- R', Ra, R b, and R c can represent hydrogen or an alkyl group having 1 to 20 carbon atoms, respectively. It may be the same group or a different group, and a hydroxy group is particularly preferable as a substituent because it has good solubility in water.
- -A alkyl group having 1 to 4 carbon atoms substituted with a hydroxy group such as a propyl group, a hydroxy-n-butyl group, a hydroxy-i-butyl group, a hydroxy-sec-butyl group, or a hydroxy-tert-butyl group.
- a hydroxy group such as a propyl group, a hydroxy-n-butyl group, a hydroxy-i-butyl group, a hydroxy-sec-butyl group, or a hydroxy-tert-butyl group.
- R 5 , R 6 , R 7 and R 8 may all be the same group, but it is preferable that at least one is a different group. More preferably, at least one group of R 5 , R 6 , R 7 and R 8 is an alkyl group having 2 or more carbon atoms and 16 or less carbon atoms, and the remaining group is an alkyl group having 1 or more carbon atoms and 4 or less carbon atoms. An alkyl group having 1 or more carbon atoms and 2 or less carbon atoms is more preferable, and a methyl group having 1 carbon atom is particularly preferable.
- X is BF 4 , a fluorine atom, a chlorine atom, or a bromine atom, and is preferably a chlorine atom or a bromine atom.
- the concentration of the quaternary ammonium cation of the quaternary ammonium salt represented by the formula (2) can be calculated from the concentration of the cation, specifically, the concentration of the quaternary ammonium cation in the entire etching solution. It is the concentration obtained by subtracting the concentration of the quaternary ammonium hydroxide cation represented by the formula (1).
- the silicon etching solution contains the cations and anions constituting the quaternary ammonium hydroxide represented by the formula (1), and the cations and anions constituting the quaternary ammonium salt represented by the formula (2). When an anion is contained, it can be treated as containing a quaternary ammonium hydroxide represented by the formula (1) and a quaternary ammonium salt represented by the formula (2).
- the ratio of the concentration of the quaternary ammonium salt represented by the formula (2) to the concentration of the quaternary ammonium hydroxide represented by the formula (1) in the silicon etching solution (formula (2) / formula (1)). ) Is not particularly limited, but excessive addition of the quaternary ammonium salt represented by the formula (2) does not allow smooth etching, and excessive addition of the quaternary ammonium salt represented by the formula (2) results in etching. From the viewpoint of contributing to the decrease in speed, the molar ratio is usually 0.02 or more and 10.00 or less, preferably 0.03 or more and 5.00 or less, and 0.04 or more and 2.50. The following is more preferable.
- the addition of the quaternary ammonium salt represented by the above formula (2) promotes the hydration of ions and reduces the number of free water molecules, so that the concentration of the quaternary ammonium hydroxide represented by the above formula (1) is concentrated.
- the present inventors consider that even when the concentration is low, the concentration of water contributing to silicon etching is reduced, and the generation of pyramid-shaped hillock surrounded by 111 planes can be suppressed.
- the method for producing the silicon etching solution of the present invention is not particularly limited.
- the quaternary ammonium hydroxide represented by the formula (1) and the quaternary ammonium salt represented by the formula (2) are mixed with water so as to have a predetermined concentration, and these quaternary ammonium hydroxide and the quaternary ammonium hydroxide are mixed.
- the quaternary ammonium salt may be dissolved in water.
- the quaternary ammonium hydroxide represented by the formula (1) and the quaternary ammonium salt represented by the formula (2) may be used as they are, or each may be used as an aqueous solution.
- either one of the quaternary ammonium hydroxide represented by the formula (1) or the quaternary ammonium salt represented by the formula (2) may be used as an aqueous solution, and the other may be directly mixed with the aqueous solution as it is.
- the silicon etching solution of the present invention uses the quaternary ammonium hydroxide represented by the following formula (2-1) instead of the quaternary ammonium salt represented by the formula (2), and uses the formula ( After preparing an aqueous solution containing the quaternary ammonium hydroxide represented by 1) and the quaternary ammonium hydroxide represented by the formula (2-1), HX (X is the one in the formula (2)) is added to the aqueous solution. It can also be produced by adding an appropriate amount of the acid shown in). R 5 R 6 R 7 R 8 N + ⁇ OH- ( 2-1) In equation (2-1), R 5 , R 6 , R 7 and R 8 are synonymous with those in equation (2).
- the above-mentioned method for processing a silicon substrate and the method for manufacturing a silicon device may include a step other than the step of etching, for example, a step of preparing a target to be etched.
- a silicon wafer, a silicon single crystal film, a polysilicon film, and an amorphous silicon film are collectively referred to as a silicon material.
- the substrate is a name in the process of manufacturing a silicon device, and is also referred to as a silicon substrate in the present specification.
- the temperature of the silicon etching solution at the time of etching according to each of the above embodiments is in the range of 20 ° C. or higher and 95 ° C. or lower in consideration of a desired etching rate, the shape of silicon after etching, the surface condition, productivity and the like. However, it is preferably in the range of 50 ° C. or higher and 90 ° C. or lower.
- TMA Tetramethylammonium hydroxide
- decyltrimethylammonium bromide is used as the quaternary ammonium salt represented by the formula (2)
- the rest is water.
- a silicon etching solution having the composition shown in Table 1 was prepared.
- a silicon single crystal substrate (100 surfaces) having a size of 2 cm ⁇ 2 cm was immersed in a silicon etching solution heated to the liquid temperature (treatment temperature) shown in Table 1 for 10 minutes, and the etching rate of silicon (R 100 ) at that temperature was determined. It was measured.
- the target silicon single crystal substrate is obtained by removing the natural oxide film with a chemical solution.
- the etching rate is determined by measuring the weight of the silicon single crystal substrate before and after etching the silicon single crystal substrate (100 faces), converting the etching amount of the silicon single crystal substrate from the weight difference before and after the treatment, and dividing by the etching time. Asked by doing.
- Table 1 shows a silicon etching solution having the composition shown in Table 1 in which the type and amount of the quaternary ammonium hydroxide represented by the formula (1) and the quaternary ammonium salt represented by the formula (2) are changed. Each characteristic was evaluated in the same manner as in Example 1 except that the etching was performed at a temperature. The evaluation results are shown in Table 1.
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Abstract
Description
下記式(1)で示される水酸化第四級アンモニウム、下記式(2)で示される第四級アンモニウム塩、および水を含み、かつ、前記式(2)で示される第四級アンモニウム塩の濃度が1質量%を超え、50質量%以下であることを特徴とする、シリコンエッチング液に関する。
R1R2R3R4N+・OH- (1)
(式(1)中、R1、R2、R3およびR4は、置換基を有していてもよい、アルキル基、アリール基またはベンジル基であり、それぞれ同一の基であっても異なる基であってもよい。)
R5R6R7R8N+・X- (2)
(式(2)中、R5、R6、R7およびR8は、置換基を有していてもよい炭素数1~16のアルキル基であり、それぞれ同一の基であっても、異なる基であってもよい。Xは、BF4、フッ素原子、塩素原子または臭素原子である。)
第一の本発明のシリコンエッチング液を用いて前記シリコン材料をエッチングする工程を含む、シリコンデバイスの製造方法である。
本明細書において、「~」を用いて表される数値範囲は、「~」の前後に記載された数値を下限値及び上限値として含む範囲を意味し、「A~B」は、A以上B以下であることを意味する。
項1 下記式(1)で示される水酸化第四級アンモニウム、下記式(2)で示される第四級アンモニウム塩、および水を含み、かつ、前記式(2)で示される第四級アンモニウム塩の濃度が1質量%を超え、50質量%以下であることを特徴とする、シリコンエッチング液。
R1R2R3R4N+・OH- (1)
(式(1)中、R1、R2、R3およびR4は、置換基を有していてもよい、アルキル基、アリール基またはベンジル基であり、それぞれ同一の基であっても異なる基であってもよい。)
R5R6R7R8N+・X- (2)
(式(2)中、R5、R6、R7およびR8は、置換基を有していてもよい炭素数1~16のアルキル基であり、それぞれ同一の基であっても、異なる基であってもよい。Xは、BF4、フッ素原子、塩素原子、または臭素原子である。)
項2 前記式(1)で示される水酸化第四級アンモニウムの濃度が0.05モル/L以上、1.1モル/L以下である、項1に記載のシリコンエッチング液。
項3 前記式(2)で示される第四級アンモニウム塩の分子中の炭素の総数が4個以上、12個以下である、項1又は2に記載のシリコンエッチング液。
項4 シリコンウェハ、シリコン単結晶膜、ポリシリコン膜、およびアモルファスシリコン膜からなる群から選択される少なくとも1つのシリコン材料を含むシリコン基板の処理方法であって、
項1~3のいずれか1項に記載のシリコンエッチング液を用いて、前記シリコン材料をエッチングする工程を含む、シリコン基板の処理方法。
項5 シリコンウェハ、シリコン単結晶膜、ポリシリコン膜、およびアモルファスシリコン膜からなる群から選択される少なくとも1つのシリコン材料を有するシリコンデバイスの製造方法であって、
項1~3のいずれか1項に記載のシリコンエッチング液を用いて前記シリコン材料をエッチングする工程を含む、シリコンデバイスの製造方法。
R1R2R3R4N+・OH- (1)
式(1)中、R1、R2、R3およびR4は、置換基を有していてもよい、アルキル基、アリール基またはベンジル基であり、それぞれ同一の基であっても異なる基であってもよい。
R5R6R7R8N+・X- (2)
式(2)中、R5、R6、R7およびR8は、置換基を有していてもよい炭素数1~16のアルキル基であり、それぞれ同一の基であっても、異なる基であってもよい。Xは、BF4、フッ素原子、塩素原子、または臭素原子である。
アルキル基が有し得る置換基としては、特に制限されず、例えば、ハロゲニル基、ヒドロキシ基、炭素数1~20のアルコキシ基、-C≡N、-NH3、-C(=O)OH、-C(=O)OR’、-C(=O)R’、-SH、-SiRaRbRc、-BH2、-SeH、1価の芳香族炭化水素環基、又は1価の芳香族複素環基等が挙げられ、R’、Ra、Rb、およびRcは、水素、又は炭素数1~20のアルキル基を表すことができ、それぞれ同一の基であっても異なる基であってもよく、特に置換基として、水への溶解性が良いことから、ヒドロキシ基が好ましい。
式(1)で示される水酸化第四級アンモニウムのカチオンと式(2)で示される第四級アンモニウム塩のカチオンとが同一である場合、式(2)で示される第四級アンモニウム塩のアニオンの濃度から、式(2)で示される第四級アンモニウム塩の第四級アンモニウムカチオンの濃度を算出することができる、具体的には、該アニオンとカチオンの濃度はモル比で同等であり、さらに該カチオンの濃度から、式(2)で示される第四級アンモニウム塩の第四級アンモニウムカチオンの濃度を算出することができる、具体的には、エッチング液全体の第四級アンモニウムカチオン濃度から式(1)で示される水酸化第四級アンモニウムのカチオンの濃度を減じた濃度である。
なお、本実施形態では、シリコンエッチング液について、式(1)で示される水酸化第四級アンモニウムを構成するカチオンおよびアニオン、並びに式(2)で示される第四級アンモニウム塩を構成するカチオンおよびアニオンが含まれる場合、式(1)で示される水酸化第四級アンモニウム、並びに式(2)で示される第四級アンモニウム塩が含まれるものとして扱うことができる。
また、シリコンエッチング液中において、式(1)で示される水酸化第四級アンモニウムの濃度に対する式(2)で示される第四級アンモニウム塩の濃度の比率(式(2)/式(1))は、特段制限されないが、式(2)で示される第四級アンモニウム塩の過少な添加は平滑なエッチングができず、式(2)で示される第四級アンモニウム塩の過剰な添加はエッチング速度の低下に寄与するという観点から、モル比で、通常0.02以上、10.00以下であり、0.03以上、5.00以下であることが好ましく、0.04以上、2.50以下であることがより好ましい。
R1R2R3R4N+ (1’)
式(1’)中、R1、R2、R3およびR4は、前記式(1)におけるものと同義である。
R5R6R7R8N+ (2’)
式中、R5、R6、R7およびR8は、前記式(2)におけるものと同義である。
よって、これらのイオン種を含んでいるシリコンエッチング液は、本発明のシリコンエッチング液である。
本発明のシリコンエッチング液の組成は、液中のイオン成分及びその濃度を分析定量して、式(1)で示される水酸化第四級アンモニウム及び式(2)で示される第四級アンモニウム塩に換算することにより、確認することができる。第四級アンモニウムカチオンは液体クロマトグラフィー、またはイオンクロマトグラフィー、OH-イオンは中和滴定、X-イオンはイオンクロマトグラフィーで測定できる。
本発明のシリコンエッチング液の製造方法は特に制限されない。式(1)で示される水酸化第四級アンモニウムと式(2)で示される第四級アンモニウム塩とを所定濃度となるように水と混合し、これらの水酸化第四級アンモニウムと第四級アンモニウム塩を水に溶解させればよい。式(1)で示される水酸化第四級アンモニウムと式(2)で示される第四級アンモニウム塩とは、そのまま使用してもよいし、それぞれを水溶液として使用してもよい。また、式(1)で示される水酸化第四級アンモニウムまたは式(2)で示される第四級アンモニウム塩の何れか一方を水溶液とし、該水溶液に他方を直接そのまま混合してもよい。
R5R6R7R8N+・OH- (2-1)
式(2-1)中、R5、R6、R7およびR8は、式(2)におけるものと同義である。
従って、上記のシリコンエッチング液は、シリコンデバイスの製造方法に好適に用いることもできる。本発明の別の実施形態であるシリコンデバイスの製造方法は、シリコンウェハ、シリコン単結晶膜、ポリシリコン膜、およびアモルファスシリコン膜からなる群から選択される少なくとも1つのシリコン材料を有するシリコンデバイスの製造方法であって、上述したシリコンエッチング液を用いて前記シリコン材料をエッチングする工程を含む、シリコンデバイスの製造方法である。
また、上記のシリコン基板の処理方法、およびシリコンデバイスの製造方法におけるエッチングの工程におけるエッチングの方法は、上述のシリコンエッチング液を用いること以外は特段制限されず、公知の方法により実施することができ、例えば後述のウェットエッチングで説明する方法が挙げられる。
また、上記のシリコン基板の処理方法、およびシリコンデバイスの製造方法は、エッチングする工程の以外の工程、例えば、エッチングする対象を準備する工程等を有していてよい。
なお、本明細書では、シリコンウェハ、シリコン単結晶膜、ポリシリコン膜、およびアモルファスシリコン膜を総称して、シリコン材料と称する。
なお、基板とはシリコンデバイス製造過程中の呼称であり、本願明細書ではシリコン基板とも称する。
基板を水平姿勢に保持する基板保持工程と、
当該基板の中央部を通る、鉛直な回転軸線まわりに前記基板を回転させながら、前記基板の主面に本発明の等方性シリコンエッチング液を供給する処理液供給工程とを含む。
複数の基板を直立姿勢で保持する基板保持工程と、
処理槽に貯留された本発明の等方性シリコンエッチング液に前記基板を直立姿勢で浸漬する工程とを含む。
式(1)で示される水酸化第四級アンモニウムとしてテトラメチルアンモニウムハイドロオキサイド(TMAH)を用い、式(2)で示される第四級アンモニウム塩としてデシルトリメチルアンモニウムブロマイドを用い、残りが水である表1に示す組成のシリコンエッチング液を調製した。
表1に記載した液温(処理温度)に加熱したシリコンエッチング液に2cm×2cmサイズのシリコン単結晶基板(100面)を10分間浸漬し、その温度でのシリコンのエッチング速度(R100)を測定した。対象のシリコン単結晶基板は、薬液にて自然酸化膜を除去したものである。エッチング速度は、シリコン単結晶基板(100面)のエッチング前とエッチング後のシリコン単結晶基板の重量を測定し、処理前後の重量差からシリコン単結晶基板のエッチング量を換算し、エッチング時間で除することにより求めた。同様に2cm×2cmサイズのシリコン単結晶基板(111面)を120分間浸漬し、その温度でのシリコンのエッチング速度(R111)を測定し、シリコン単結晶基板(100面)とのエッチング速度比(R100/R111)を求めた。
(目視観察結果)
5・・・基板表面に白い濁りが一切見られない、かつ鏡面である。
3・・・基板表面にほんの僅かな白い濁りが見られるが、鏡面である。
1・・・基板表面が完全に白く濁っているが、鏡面は残っている。
0・・・基板表面が完全に白く濁っており、かつ激しい面荒れにより鏡面が失われている。
観察倍率2万倍で任意の場所を3カ所選び、50μm角を観察し、ヒロックの有無を調べた。
5・・・評価基板の全面でヒロックが観察されない。
3・・・評価基板にわずかに微小なヒロックが観察される。
0・・・評価基板上にヒロックが多数観察される。
表1に記載した液温(処理温度)に加熱したシリコンエッチング液に2cm×2cmサイズのシリコン酸化膜、およびシリコン窒化膜を成膜したウェハを10分間浸漬し、その温度でのシリコン酸化膜、およびシリコン窒化膜のエッチング速度を測定した。エッチング速度は、シリコン酸化膜、およびシリコン窒化膜のエッチング前とエッチング後の膜厚を分光エリプソメーターで測定し、処理前後の膜厚差からシリコン酸化膜、およびシリコン窒化膜のエッチング量を換算し、エッチング時間で除することにより求めた。次に、上記した方法で測定したシリコン単結晶基板(100面)のエッチング速度(R100)を用いて、シリコン単結晶基板(100面)とのエッチング速度比(R100/シリコン酸化膜)、(R100/シリコン窒化膜)を算出し、下記の基準で評価した。結果を表1に示す。
シリコン単結晶とシリコン酸化膜との選択比(Si(100面)/SiO2)の評価基準
A:1000以上 B:700以上1000未満 C:500以上700未満 D:500未満
シリコン単結晶と窒化シリコン膜との選択比(Si(100面)/SiN)の評価基準
A:1000以上 B:700以上1000未満 C:500以上700未満 D:500未満
上記評価において、B以上が良好な選択性を示しているとした。ここで、無機アルカリである水酸化カリウム(KOH)の選択比(Si(100面)/SiO2)は約250であり、上記の評価基準ではDに分類される。
式(1)で示される水酸化第四級アンモニウムおよび式(2)で示される第四級アンモニウム塩の種類と量を変えた、表1に示す組成のシリコンエッチング液を用い、表1に示す温度でエッチングしたこと以外、実施例1と同様にして各特性を評価した。評価結果を表1に示す。
シリコンエッチング液として、式(2)で示される第四級アンモニウム塩を含有しない、表1に示す組成のシリコンエッチング液を用いたこと以外、実施例1と同様にして各特性を評価した。結果を表1に示す。
Claims (5)
- 下記式(1)で示される水酸化第四級アンモニウム、下記式(2)で示される第四級アンモニウム塩、および水を含み、かつ、前記式(2)で示される第四級アンモニウム塩の濃度が1質量%を超え、50質量%以下であることを特徴とする、シリコンエッチング液。
R1R2R3R4N+・OH- (1)
(式(1)中、R1、R2、R3およびR4は、置換基を有していてもよい、アルキル基、アリール基またはベンジル基であり、それぞれ同一の基であっても異なる基であってもよい。)
R5R6R7R8N+・X- (2)
(式(2)中、R5、R6、R7およびR8は、置換基を有していてもよい炭素数1~16のアルキル基であり、それぞれ同一の基であっても、異なる基であってもよい。Xは、BF4、フッ素原子、塩素原子、または臭素原子である。) - 前記式(1)で示される水酸化第四級アンモニウムの濃度が0.05モル/L以上、1.1モル/L以下である、請求項1に記載のシリコンエッチング液。
- 前記式(2)で示される第四級アンモニウム塩の分子中の炭素の総数が4個以上、12個以下である、請求項1又は2に記載のシリコンエッチング液。
- シリコンウェハ、シリコン単結晶膜、ポリシリコン膜、およびアモルファスシリコン膜からなる群から選択される少なくとも1つのシリコン材料を含むシリコン基板の処理方法であって、
請求項1~3のいずれか1項に記載のシリコンエッチング液を用いて、前記シリコン材料をエッチングする工程を含む、シリコン基板の処理方法。 - シリコンウェハ、シリコン単結晶膜、ポリシリコン膜、およびアモルファスシリコン膜からなる群から選択される少なくとも1つのシリコン材料を有するシリコンデバイスの製造方法であって、
請求項1~3のいずれか1項に記載のシリコンエッチング液を用いて前記シリコン材料をエッチングする工程を含む、シリコンデバイスの製造方法。
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