WO2021249312A1 - 显示面板、透明显示面板及其制作方法 - Google Patents

显示面板、透明显示面板及其制作方法 Download PDF

Info

Publication number
WO2021249312A1
WO2021249312A1 PCT/CN2021/098452 CN2021098452W WO2021249312A1 WO 2021249312 A1 WO2021249312 A1 WO 2021249312A1 CN 2021098452 W CN2021098452 W CN 2021098452W WO 2021249312 A1 WO2021249312 A1 WO 2021249312A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
light
pixel
nano
display panel
Prior art date
Application number
PCT/CN2021/098452
Other languages
English (en)
French (fr)
Inventor
樊星
暴营
赵明
吴启晓
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/788,567 priority Critical patent/US20230039218A1/en
Publication of WO2021249312A1 publication Critical patent/WO2021249312A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/82—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]

Definitions

  • This application relates to the technical field of display devices, and in particular to a display panel, a transparent display panel and a manufacturing method thereof.
  • TOF time of flight
  • the principle of TOF technology is to use a transmitter to emit laser light to an object, and then a sensor to receive the reflected laser signal, and then calculate the distance between the object and the mobile phone according to the round-trip time of the light, so that the reflection point can be determined.
  • the signal wavelength of the TOF device is generally in the infrared band (such as 940 nm).
  • the first aspect of the embodiments of the present application provides a transparent display panel, including: a light-transmitting substrate, the light-transmitting substrate includes a display area, the display area includes alternately distributed pixel areas and non-pixel areas; pixel structure, located in the In the pixel area, each of the pixel structures includes a first electrode close to the light-transmitting substrate, a second electrode far from the light-transmitting substrate, and a light-emitting block between the first electrode and the second electrode ,
  • the material of the second electrode includes a transflective material; a second electrode connection part located in the non-pixel area, the second electrode connection part is connected to the adjacent second electrode, and the second electrode is connected
  • the material of the second electrode is the same as that of the second electrode; and the nano material layer includes a plurality of nano island-like structures separated from each other, and the nano material layer is located at least on the side of the second electrode connection part away from the light-transmitting substrate , Used to excite the surface plasmons corresponding
  • the material of the second electrode connection part is different from the material of the nano material layer, the material of the second electrode connection part includes at least one of magnesium, silver, and aluminum, and the material of the nano material layer includes At least one of gold, silver, lead, aluminum, and magnesium.
  • the nano-island structure is periodically distributed or non-periodically distributed; and/or the nano-island structure is a cuboid, cube, cone, pyramid or hemisphere.
  • the light emitting mode of the pixel structure is an active driving mode, and each of the second electrodes and each of the second electrode connecting portions are connected to form a surface electrode.
  • the side of the second electrode away from the light-transmitting substrate has the nano-material layer.
  • the light emitting mode of the pixel structure is a passive driving mode
  • the non-pixel area has a first electrode connecting portion, and each of the first electrodes located in the same first direction is connected to each of the first electrode connecting portions
  • Each of the second electrodes located in the same second direction and each of the second electrode connecting parts are connected to form a strip of electrodes, and the second direction is perpendicular to the first direction.
  • the side of the second electrode away from the light-transmitting substrate has the nano-material layer.
  • a second aspect of the embodiments of the present application provides a display panel including a transparent display area and a non-transparent display area, and the transparent display area includes the transparent display panel described in any one of the foregoing.
  • a third aspect of the embodiments of the present application provides a method for manufacturing a transparent display panel, including: providing a light-transmitting substrate, the light-transmitting substrate includes a display area, the display area includes alternately distributed pixel areas and non-pixel areas; The pixel area forms a pixel structure, and at the same time a second electrode connecting portion is formed in the non-pixel area, wherein each of the pixel structures includes a first electrode close to the light-transmitting substrate, and a first electrode far from the light-transmitting substrate.
  • the material of the second electrode includes a transflective material, and the second electrode connecting portion connects the adjacent second electrode ,
  • the second electrode connection part and the second electrode are formed in the same process; at least a nano material layer is formed on the side of the second electrode connection part away from the light-transmitting substrate, and the nano material layer includes Nano island-like structures separated from each other.
  • the nano-island structure is formed by an evaporation method, an etching method or a laser ablation method.
  • the material of the second electrode connection part is different from the material of the nano material layer, the material of the second electrode connection part includes at least one of magnesium, silver, and aluminum, and the material of the nano material layer includes At least one of gold, silver, lead, aluminum, and magnesium.
  • the nano-island structure is periodically distributed or non-periodically distributed; and/or the nano-island structure is a cuboid, cube, cone, pyramid or hemisphere.
  • the light emitting mode of the pixel structure is an active driving mode
  • the forming the pixel structure in the pixel area and simultaneously forming the second electrode connecting portion in the non-pixel area includes: making each of the second electrodes It is connected to each of the second electrode connecting portions to form a surface electrode.
  • the method further includes: forming the nano-material layer on a side of the second electrode away from the light-transmitting substrate.
  • the light emitting mode of the pixel structure is a passive driving mode
  • the forming the pixel structure in the pixel area and simultaneously forming the second electrode connecting portion in the non-pixel area includes: forming in the non-pixel area
  • the first electrode connecting portion is such that each of the first electrodes and each of the first electrode connecting portions located in the same first direction are connected to form a strip electrode
  • the second electrode connecting portion is formed in the non-pixel area, so that Each of the second electrodes located in the same second direction and each of the second electrode connecting portions are connected to form a strip of electrodes, and the second direction is perpendicular to the first direction.
  • the method further includes: forming the nano-material layer on a side of the second electrode away from the light-transmitting substrate.
  • FIG. 1 is a schematic top view of a transparent display panel according to an embodiment of the present application
  • Figure 2 is a cross-sectional view taken along line AA in Figure 1;
  • Figure 3 is a circuit diagram of a pixel drive circuit with a 2T1C structure
  • FIG. 4 is a flowchart of a method for manufacturing a transparent display panel according to an embodiment of the present application
  • Figures 5 and 6 are schematic diagrams of intermediate structures corresponding to the process of Figure 4;
  • FIG. 7(a) and FIG. 7(b) are schematic cross-sectional structure diagrams of two types of transparent display panels according to another embodiment of the present application.
  • FIG. 8 is a schematic top view of a transparent display panel according to another embodiment of the present application.
  • Figure 9 is a cross-sectional view taken along line BB in Figure 8.
  • FIG. 10 is a schematic top view of a transparent display panel according to another embodiment of the present application.
  • Figure 11 is a cross-sectional view taken along line CC in Figure 10;
  • FIG. 12 is a schematic top view of a transparent display panel according to another embodiment of the present application.
  • Figure 13 is a cross-sectional view taken along line DD in Figure 12;
  • FIG. 14 is a schematic top view of the structure of a display panel according to another embodiment of the present application.
  • the emitted light first passes through the screen to reach the external detection object, and then the reflected light passes through the screen again to reach the under-screen receiving sensor.
  • the transmittance of the screen in the infrared band is required to be very high.
  • the commonly used organic light-emitting diode top electrode structure is a semi-transparent metal film, and its transmittance in the visible light band is about 40%-60%, and the transmittance in the infrared band is about 20%-40%. This restricts the transmittance of the entire screen, especially the transmittance of the infrared band. At present, the transmittance of the screen in the infrared band is only about 20-30%, which cannot meet the application requirements of the TOF under the screen. It should be noted that the infrared light in this application refers to a wavelength greater than 620 nm.
  • FIG. 1 is a schematic top view of a transparent display panel according to an embodiment of the present application
  • FIG. 2 is a cross-sectional view along line AA in FIG. 1.
  • the transparent display panel 1 includes:
  • a light-transmitting substrate 10 includes a display area 101, and the display area 101 includes alternately distributed pixel areas 101a and non-pixel areas 101b;
  • the pixel structure 11 is located in the pixel area 101a.
  • Each pixel structure 11 includes: a first electrode 11a close to the light-transmitting substrate 10, a second electrode 11b far from the light-transmitting substrate 10, and a gap between the first electrode 11a and the second electrode 11b.
  • the material of the second electrode 11b includes a transflective material;
  • the second electrode connecting portion 12 is located in the non-pixel area 101b, the second electrode connecting portion 12 is connected to the adjacent second electrode 11b, and the material of the second electrode connecting portion 12 and the second electrode 11b are the same;
  • the nano-material layer 13 includes a plurality of nano-island structures 13a separated from each other.
  • the nano-material layer 13 is located at least on the side of the second electrode connecting portion 12 away from the light-transmitting substrate 10, and is used to make the surface plasmons corresponding to the infrared light Excitation is also used to scatter infrared light.
  • the light-transmitting substrate 10 may be a flexible substrate or a rigid substrate.
  • the material of the flexible substrate may be polyimide, and the material of the rigid substrate may be glass.
  • the light-transmitting substrate 10 may further include a non-display area (not labeled) surrounding the display area 101.
  • the non-display area can be used for setting circuits, such as gate driving circuits.
  • the light-transmitting substrate 10 may only include the display area 101. The circuit is arranged in the display area 101 or integrated in other chips.
  • the transparent substrate 10 has a planarization layer PLN.
  • the planarization layer PLN has a first electrode 11 a on a side away from the light-transmitting substrate 10.
  • a pixel definition layer PDL is provided on the first electrode 11a and the planarization layer PLN not covered with the first electrode 11a.
  • the pixel definition layer PDL has an opening exposing a partial area of the first electrode 11a, and a light-emitting block 11c is disposed in the opening.
  • the light-emitting block 11c and the pixel definition layer PDL are provided with a second electrode 11b and a second electrode connecting portion 12.
  • the light-emitting block 11c may be red, green, or blue, or red, green, blue, or yellow.
  • the pixel structures 11 of the three primary colors of red, green and blue or the four primary colors of red, green, blue and yellow are alternately distributed.
  • the material of the light-emitting block 11c may be an organic light-emitting material (OLED).
  • the materials of the planarization layer PLN and the pixel definition layer PDL can be transparent materials such as polyimide.
  • the first electrode 11a may be an anode, and the material is a light-transmitting material or a light-reflecting material.
  • the light-transmitting material may be at least one of indium tin oxide (ITO), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO).
  • the reflective material can be silver (Ag) and its alloys, aluminum (Al) and its alloys, such as silver (Ag), alloys of silver and lead (Ag: Pb), alloys of aluminum and neodymium (Al: Nd), silver platinum Copper alloys (Ag:Pt:Cu), etc.
  • a layer of ITO, IZO or IGZO may be provided between the first electrode 11a and the light-emitting block 11c.
  • the second electrode 11b may be a cathode, and the material may be a material (semi-transmissive and semi-reflective material) with a function of partially transmitting light and partially reflecting light.
  • the second electrode 11b may have a single-layer structure, and the material of the single-layer structure may include at least one of magnesium, silver, and aluminum, for example, a mixture of magnesium and silver or a mixture of aluminum and silver.
  • the second electrode 11b may also have a three-layer structure composed of a transparent conductive layer, an intermediate layer, and a transparent conductive layer.
  • the material of the transparent conductive layer may be at least one of ITO, IZO, and IGZO.
  • the material of the intermediate layer includes at least one of magnesium, silver, and aluminum, for example, a mixture of magnesium and silver or a mixture of aluminum and silver.
  • the transparent display panel 1 has a top-emitting structure.
  • the light emitting mode of the pixel structure 11 is Active Matrix (AM). Therefore, a pixel driving circuit is provided between the first electrode 11 a and the light-transmitting substrate 10.
  • AM Active Matrix
  • FIG. 3 is a circuit diagram of a pixel driving circuit with a 2T1C structure.
  • the pixel driving circuit includes a switching transistor X1, a driving transistor X2, and a storage capacitor Cst.
  • the gate of the switching transistor X1 is electrically connected to a row of scanning signal lines.
  • the switch transistor X1 maintains the data signal VData on a column of data signal lines on a plate of the storage capacitor Cst.
  • the data signal held on the storage capacitor Cst keeps the driving transistor X2 turned on, so that the power signal VDD on a column of power signal lines continuously supplies power to the first electrode 11a of a pixel structure 11.
  • the pixel driving circuits of the pixel structures 11 of each color in the same row can be connected to the same row of scanning signal lines, and the pixel driving circuits of the pixel structures 11 of the same color in the same column can be connected to the same column of data signal lines and the same column of power signal lines.
  • the storage capacitor Cst may be formed by the overlapping area of the power signal line and the gate of the driving transistor X2.
  • the driving transistor X2 in the pixel driving circuit includes: a bottom gate 141, a gate insulating layer 142, an active layer 143, an interlayer dielectric layer ILD, a source electrode 144a, a drain electrode 144b, and Passivation layer PVX.
  • Each layer in the switching transistor X1 may be located on the same layer as the same functional layer in the driving transistor X2. In other words, the switching transistor X1 and the driving transistor X2 have a bottom gate structure.
  • the drain 144b of the switching transistor X1 and the source 144a of the driving transistor X2 may be connected through a conductive plug and a metal interconnection layer.
  • one of the switching transistor X1 and the driving transistor X2 may have a bottom gate structure and the other may have a top gate structure, or both may have a top gate structure.
  • the pixel driving circuit of the pixel structure 11 may also be a circuit structure in related technologies such as 3T1C, 5T2C, 6T1C, 7T1C, etc., which is not limited in this embodiment.
  • each second electrode 11b is connected to each second electrode connecting portion 12 to form a surface electrode, so as to facilitate the application of voltage to each second electrode 11b.
  • the width of the second electrode connecting portion 12 is equal to the width of the second electrode 11b in the row direction and the column direction.
  • the width of the second electrode connecting portion 12 is smaller than the width of the second electrode 11b.
  • the surface electrode has a hollow area.
  • the material of the second electrode connecting portion 12 is the same as that of the second electrode 11b.
  • both the second electrode connecting portion 12 and the second electrode 11b have a single-layer structure
  • the material of the single-layer structure includes at least one of magnesium, silver, and aluminum, such as a mixture of magnesium and silver or a mixture of aluminum and aluminum. A mixture of silver.
  • the material of the single-layer structure can also be filled with other metals, such as calcium.
  • both the second electrode connecting portion 12 and the second electrode 11b have a three-layer structure composed of a transparent conductive layer, an intermediate layer, and a transparent conductive layer.
  • the material of the transparent conductive layer may be at least one of ITO, IZO, and IGZO
  • the material of the intermediate layer includes at least one of magnesium, silver, and aluminum, for example, a mixture of magnesium and silver or a mixture of aluminum and silver.
  • the material of the intermediate layer can also be filled with other metals, such as calcium.
  • the light emitting mode of the pixel structure 11 is Passive Matrix (PM). Therefore, there is no pixel driving circuit between the first electrode 11 a and the light-transmitting substrate 10.
  • PM Passive Matrix
  • the nano-material layer 13 includes a plurality of nano-island structures 13a.
  • the nano island structures 13a separated from each other in at least a part of the area are periodically distributed and used to form a grating; the nano island structures 13a in other areas are non-periodically distributed and used to form a rough surface.
  • each of the separated nano island structures 13a is aperiodicly distributed to form a rough surface.
  • the material of the nano-material layer 13 may be at least one of Au, Ag, Pb, Al, and Mg.
  • each nano-island structure 13a is a cone. In other embodiments, the nano-island structure 13a is in the form of a rectangular parallelepiped, cube, pyramid or hemisphere.
  • a light extraction layer (CPL) or an encapsulation layer (such as a TFE film) may be provided on the side of the nanomaterial layer 13 and each second electrode 11b away from the light-transmitting substrate 10.
  • the infrared light will propagate to the intersection of the metal (the second electrode connecting portion 12) and the medium (for example, a light extraction layer or an encapsulation layer).
  • the medium for example, a light extraction layer or an encapsulation layer.
  • surface plasmons Surface Plasma Polaritos, SPPs
  • Surface plasmon is a mixed excited state formed by the interaction of free electrons and photons in the metal surface area. That is, under the irradiation of light waves of the same frequency, the free electrons on the surface collectively resonate. Because the wave number of surface plasmons is greater than the wave number of photons in vacuum or surrounding media at the same frequency, that is, the wave numbers are not matched, surface plasmons cannot be excited and radiate from the metal surface under normal circumstances.
  • multiple nano-island structures 13a form a grating, which can diffract the incident infrared light, change the wave number, match the wave number of the surface plasmon and excite it, so that the original
  • the infrared light confined in the second electrode connecting portion 12 can be emitted, and the rough surface formed by the plurality of nano-island structures 13a can also scatter the infrared light, thereby increasing the transmittance of the infrared light.
  • the wavenumber of infrared light is less than that of visible light
  • the wavenumber of diffracted light is more likely to match the wavenumber of the surface plasmon corresponding to infrared light, so that the probability of infrared light emission is greater than that of visible light. Probability of shooting.
  • the arrangement of the above-mentioned nano-material layer has little change in the visible light transmittance, but relatively increases the infrared light transmittance, so it is very suitable for under-screen TOF applications.
  • the structure and parameters of the transparent display panel 1 of the sample 1 and the control sample are roughly the same.
  • the material of the second electrode connection part 12 is magnesium, and the difference is that: the sample 1 is provided with a nano-material layer 13, the material is silver, and the thickness is 2nm.
  • the thickness of the second electrode connection portion 12 is 11 nm; the control sample is not provided with the nano material layer 13, and the thickness of the second electrode connection portion 12 is 13 nm.
  • the following table shows the transmittance of sample 1 and control sample at incident wavelengths of 460nm, 530nm, 620nm, and 940nm, respectively.
  • the arrangement of the nano-material layer increases the transmittance when the incident wavelength is 620nm and 940nm.
  • FIG. 4 is a flow chart of the manufacturing method.
  • 5 and 6 are schematic diagrams of intermediate structures corresponding to the flow in FIG. 4.
  • a light-transmitting substrate 10 is provided.
  • the light-transmitting substrate 10 includes a display area 101.
  • the display area 101 includes alternately distributed pixel areas 101a and non-pixel areas 101b.
  • the light-transmitting substrate 10 may be a flexible substrate or a rigid substrate.
  • the material of the flexible substrate may be polyimide, and the material of the rigid substrate may be glass.
  • the pixel regions 101a and the non-pixel regions 101b are alternately distributed in the row direction and the column direction.
  • the pixel regions 101a and the non-pixel regions 101b may only be alternately distributed in the row direction, or only alternately distributed in the column direction.
  • each pixel structure 11 includes a first electrode 11a close to the light-transmitting substrate 10, a second electrode 11b far from the light-transmitting substrate 10, a light-emitting block 11c between the first electrode 11a and the second electrode 11b, and the second electrode 11b
  • the material of may be a semi-transparent and semi-reflective material; the second electrode connecting portion 12 is connected to the adjacent second electrode 11b, and the second electrode connecting portion 12 and the second electrode 11b are formed in the same process.
  • the light emitting mode of the pixel structure 11 is actively driven to emit light.
  • the pixel driving circuit applies a voltage to the pixel structure 11 to cause it to emit light. Therefore, before forming the pixel structure in the pixel area, a pixel driving circuit is formed in the pixel area 101a first.
  • the pixel structure 11 is a current-type device. Therefore, the pixel driving circuit includes a number of transistors and storage capacitors. The following still takes the 2T1C structure in FIG. 3 as an example to introduce the manufacturing process of the pixel driving circuit. Step S2 may further include steps S21-S23.
  • Step S21 forming a bottom gate 141 in the switching transistor region and the driving transistor region of the pixel region 101a, respectively; forming a gate insulating layer 142 covering the bottom gate 141 and the transparent substrate 10 in the pixel region 101a and the non-pixel region 101b;
  • the active layer 143 (including the source region, the drain region, and the channel region between the source region and the drain region) is formed in the pixel region and the driving transistor region;
  • the interlayer dielectric layer ILD of the insulating layer 142; the source electrode 144a connected to the source area and the drain electrode 144b connected to the drain area are formed in the switching transistor area and the driving transistor area; the covering source electrode 144a is formed in the pixel area 101a and the non-pixel area 101b,
  • one of the switching transistor X1 and the driving transistor X2 has a bottom gate structure, the other has a top gate structure, or both of them have a top gate structure.
  • the top gate structure refers to a transistor structure in which the gate electrode is farther away from the transparent substrate 10 than the active layer 143 is.
  • the pixel driving circuits of the sub-pixel structures 11 in the same row are connected to the same row of scanning signal lines, and the pixel driving circuits of the same-color pixel structures 11 in the same column are connected to the same column of data signal lines and the same column of power signal lines.
  • the scan signal line and the bottom gate 141 can be formed in the same process.
  • the data signal line and the power signal line can be formed in the same process as the source electrode 144a/drain electrode 144b.
  • the storage capacitor Cst may be formed by the overlapping area of the power signal line and the gate of the driving transistor X2.
  • the pixel driving circuit of the pixel structure 11 may also be a circuit structure in related technologies such as 3T1C, 5T2C, 6T1C, 7T1C, etc., which is not limited in this embodiment.
  • Step S22 forming a planarization layer PLN on the metal interconnection layer and the passivation layer PVX.
  • the planarization layer PLN can be formed by a coating method.
  • the material of the planarization layer PLN may be a transparent material such as polyimide.
  • Step S23 A number of first electrodes 11a are formed on the side of the planarization layer PLN away from the light-transmitting substrate 10.
  • Each pixel area 101a has a first electrode 11a; each first electrode 11a and the planarization layer PLN are away from the light-transmitting substrate
  • a pixel definition layer PDL is formed on one side of 10; a number of openings are formed in the pixel definition layer PDL, and each pixel area 101a has an opening; a light-emitting block 11c is formed in each opening; each light-emitting block 11c and the pixel definition layer PDL are far away from the transparent
  • a second electrode 11b and a second electrode connecting portion 12 are formed on one side of the photo substrate 10, wherein the second electrode 11b is located in the pixel area 101a, and the second electrode connecting portion 12 is located in the non-pixel area 101b.
  • a deposition method may be used to form a first electrode material layer on the entire surface, and then a plurality of first electrode blocks may be formed as the first electrode 11a by dry etching or wet etching.
  • the first electrode 11a may be an anode, and the material is a light-transmitting material or a light-reflecting material.
  • the light-transmitting material may be at least one of ITO, IZO, and IGZO.
  • the reflective material may include silver (Ag) and its alloys, aluminum (Al) and its alloys, such as silver (Ag), alloys of silver and lead (Ag: Pb), alloys of aluminum and neodymium (Al: Nd), silver platinum Copper alloys (Ag:Pt:Cu), etc.
  • a layer of ITO, IZO or IGZO may be provided between the first electrode 11a and the light-emitting block 11c.
  • the pixel definition layer PDL can be formed by a coating method, and the opening in the pixel definition layer PDL can be formed by an etching method.
  • the material of the pixel definition layer PDL may be a transparent material such as polyimide.
  • the light-emitting block 11c can be formed by an evaporation method.
  • Each second electrode 11b and each second electrode connecting portion 12 may be connected to form a surface electrode.
  • the second electrode 11b and the second electrode connecting portion 12 can be formed in the same process using a sputtering method or an evaporation method, and therefore the materials of the two can be the same.
  • the second electrode 11b may be a cathode, and the material is a material (semi-transmissive and semi-reflective material) with partial light-transmitting and partial light-reflecting functions.
  • the second electrode 11b may have a single-layer structure, and the material of the single-layer structure may include at least one of magnesium, silver, and aluminum, such as a mixture of magnesium and silver, or a mixture of aluminum and silver; it may also be doped with other metals , Such as calcium.
  • the second electrode 11b may also have a three-layer structure composed of a transparent conductive layer, an intermediate layer, and a transparent conductive layer.
  • the material of the transparent conductive layer may be at least one of ITO, IZO, and IGZO, and the material of the intermediate layer includes at least one of magnesium, silver, and aluminum, such as a mixture of magnesium and silver, or a mixture of aluminum and silver; It can be doped with other metals, such as calcium.
  • a nano-material layer 13 is formed on the side of the second electrode connecting portion 12 away from the light-transmitting substrate 10.
  • the nano-material layer 13 includes a plurality of nanomaterials separated from each other.
  • the island structure 13a is used to excite and/or scatter the infrared light corresponding to the surface plasmons of the infrared light.
  • the material of the nano-material layer 13 and the second electrode connecting portion 12 are different. Since the two materials are different, the crystal lattice cannot be completely matched. Therefore, when evaporating dissimilar materials on the second electrode connecting portion 12, it is more inclined to form the nano-island structure 13a first, rather than forming a complete film.
  • the material of the nano-material layer 13 may be at least one of Au, Ag, Pb, Al, and Mg.
  • a light extraction layer (CPL) or an encapsulation layer (such as a TFE film) may also be formed on the side of the nano material layer 13 and each second electrode 11 b away from the light-transmitting substrate 10.
  • FIG. 7(a) is a schematic cross-sectional structure diagram of a transparent display panel according to another embodiment of the present application
  • FIG. 7(b) is a schematic cross-sectional structure diagram of another transparent display panel.
  • the transparent display panel 2 of this embodiment has roughly the same structure as the transparent display panel 1 in FIGS. 1 to 2, except that:
  • Each nano-island structure 13a is a rectangular parallelepiped or a hemisphere.
  • each nano-island structure 13a may also have other shapes such as a cube or a prism, which is not limited in this embodiment.
  • the manufacturing method of the transparent display panel 2 of this embodiment is substantially the same as that of the transparent display panel 1 in FIGS.
  • the type of material of the nano-shaped structure 13a, the density of each nano-island structure 13a during evaporation, the etching solution or etching gas or the length of time and energy of the burning time during etching, realize the specific shape of each nano-island structure 13a control.
  • FIG. 8 is a schematic top view of a transparent display panel according to another embodiment of the present application
  • FIG. 9 is a cross-sectional view along line BB in FIG. 8.
  • the transparent display panel 3 of this embodiment has roughly the same structure as the transparent display panels 1 and 2 in Figures 1 to 2 and Figure 7(b), with the only difference being: in the transparent display panel In 3, the side of each second electrode 11b away from the transparent substrate 10 also has a nano-material layer 13.
  • the pixel area 101a is provided with a nano-material layer 13.
  • the grating formed by the nano-island structures 13a separated from each other in the nano-material layer can diffract the incident infrared light when the pixel structure 11 does not emit light, change the wave number, and match the surface The wave number of the plasmon and make it excited. This allows the infrared light originally confined in the second electrode 11b to be emitted, which further increases the transmittance of the infrared light in the pixel area 101a.
  • the rough surface formed by the plurality of nano-island structures 13a can also scatter infrared light and further increase the transmittance of infrared light. As a result, the application requirements of the TOF under the screen are more satisfied.
  • the transparent display panel 3 of this embodiment is roughly the same as the transparent display panels 1 and 2 in FIG. 1, FIG. 2, and FIG.
  • the nano-material layer 13 is formed on the side of the second electrode connecting portion 12 away from the light-transmitting substrate 10
  • the nano-material layer 13 is also formed on the side of each second electrode 11 b away from the light-transmitting substrate 10.
  • the method for forming the nano-material layer 13 can refer to the method for forming the nano-material layer 13 in the foregoing embodiment.
  • FIG. 10 is a schematic top view of a transparent display panel according to another embodiment of the present application
  • FIG. 11 is a cross-sectional view taken along line CC in FIG. 10.
  • the transparent display panel 4 of this embodiment has substantially the same structure as the transparent display panels 1 and 2 in FIGS. 1 to 2, 7(a), and 7(b), with the difference being :
  • the light emitting mode of the pixel structure 11 is a passive driving mode.
  • the non-pixel area 101b of the transparent display panel 4 also has a first electrode connecting portion 15.
  • Each first electrode 11a located in the same first direction and each first electrode connecting portion 15 are connected to form a strip of electrodes, each located in the same second direction
  • the second electrode 11b is connected to each second electrode connecting portion 12 to form a strip electrode.
  • the second direction is perpendicular to the first direction.
  • PM passive matrix
  • a voltage is applied to the pixel structure 11 at the intersection of the row and column strip electrodes to make the pixel structure 11 emit light. Therefore, there is no pixel driving circuit between the first electrode 11 a and the transparent substrate 10.
  • the first direction is the row direction
  • the second direction is the column direction.
  • the first direction may be the column direction and the second direction may be the row direction.
  • the second electrode connection part is provided with a nano-material layer 13
  • each of the separated nano-island structures 13a can form a grating to diffract the incident infrared light, change the wave number, match the wave number of the surface plasmon and make it excited,
  • the infrared light originally confined in the second electrode connecting portion 12 can be emitted, and the transmittance of infrared light in the non-pixel area 101b is increased.
  • the rough surface formed by the plurality of nano-island structures 13a can also scatter infrared light and increase the transmittance of infrared light. As a result, the application requirements of the TOF under the screen can be met.
  • Each first electrode 11a and each first electrode connecting portion 15 may be located on the same layer, and the materials of the two may be the same, and both may be light-transmitting materials, such as at least one of ITO, IZO, and IGZO.
  • the transparent display panel 4 of this embodiment is roughly the same as the transparent display panel 1 in FIG. 1 to FIG.
  • Each second electrode connecting portion 12 connects each second electrode 11b in the same second direction into a strip electrode; at the same time, a first electrode connecting portion 15 is formed in the non-pixel area 101b, and each first electrode located in the same first direction
  • the connecting portion 15 connects the respective first electrodes 11 a in the same first direction into a strip of electrodes, and the first electrode connecting portion 15 and the first electrode 11 a are formed in the same process.
  • FIG. 12 is a schematic top view of a transparent display panel according to another embodiment of the present application
  • FIG. 13 is a cross-sectional view taken along line DD in FIG. 12.
  • the transparent display panel 5 of this embodiment has substantially the same structure as the transparent display panel 4 in FIGS. 10 to 11, except that: in the transparent display panel 5, each second electrode 11b The side away from the light-transmitting substrate 10 also has a nano-material layer 13.
  • a nano-material layer 13 is provided in the pixel area 101a.
  • the grating formed by the nano-island structures 13a separated from each other in the nano-material layer can diffract the incident infrared light, change the wave number, and match when the pixel structure 11 does not emit light.
  • the rough surface formed by the plurality of nano-island structures 13a can scatter infrared light and further increase the transmittance of infrared light. As a result, the application requirements of the under-screen TOF can be further satisfied.
  • FIG. 14 is a schematic top view of the structure of a display panel according to another embodiment of the present application.
  • the display panel 6 of this embodiment includes a transparent display area 61 and a non-transparent display area 62.
  • the transparent display area 62 can be any of the above-mentioned transparent display panels 1, 2, 3, 4, and 5.
  • the non-transparent display area 62 may include a non-transparent display panel.
  • the non-transparent display panel is similar to the above-mentioned transparent display panels 1, 2, 3, 4, 5, except that: in the non-transparent display panel, the material of the first electrode is a light-reflecting material; in addition, the nano-material layer 13 is omitted.
  • the substrate of the non-transparent display panel may be a non-transparent substrate.
  • the non-transparent display panel can be assembled with the transparent display panels 1, 2, 3, 4, and 5.
  • the non-transparent display area 62 and the transparent display area 61 may be located on the same light-transmitting substrate 10. The only difference is: in the pixel structure of the non-transparent display area 62, the material of the first electrode is a light-reflecting material; in addition, The nano-material layer 13 may be omitted or not.
  • an embodiment of the present application also provides a device including any of the foregoing transparent display panels 1, 2, 3, 4, 5 or display panel 6.
  • Display device can be any product or component with a display function, such as an e-book, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator, and so on.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本申请提供了一种显示面板、透明显示面板及其制作方法，透明显示面板包括透光基底、像素结构、第二电极连接部以及纳米材料层；透光基底的显示区包括交替分布的像素区与非像素区；像素结构位于像素区，包括：靠近透光基底的第一电极、远离透光基底的第二电极以及第一电极与第二电极之间的发光块；第二电极连接部位于非像素区，连接相邻第二电极，第二电极连接部与第二电极的材料相同，都包括半透半反材料；纳米材料层包括多个彼此分离的纳米岛状结构，至少位于第二电极连接部远离透光基底的一侧，用于使红外光对应的表面等离子激元激发，也用于散射红外光。

Description

显示面板、透明显示面板及其制作方法
本申请要求了2020年6月11日提交的、申请号为202010532070.7、申请名称为“显示面板、透明显示面板及其制作方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示设备技术领域，尤其涉及一种显示面板、透明显示面板及其制作方法。
背景技术
目前显示领域对人脸识别、3D体感游戏、拍照等3D立体视觉应用的需求越来越多。TOF(time of flight)与实现3D立体视觉体验有关。TOF技术的原理是用一个发射器向物体发射激光，再由一个传感器接收反射回来的激光信号，然后再根据光线往返的时间来计算物体与手机之间距离，从而可以确定反射点。当发射的激光足够多的时候，所有的点就能连成一个立体面。TOF装置的信号波长一般在红外波段(如940nm)。
申请内容
本申请实施例的第一方面提供一种透明显示面板，包括：透光基底，所述透光基底包括显示区，所述显示区包括交替分布的像素区与非像素区；像素结构，位于所述像素区，每一所述像素结构包括靠近所述透光基底的第一电极、远离所述透光基底的第二电极、以及所述第一电极与所述第二电极之间的发光块，所述第二电极的材料包括半透半反材料；第二电极连接部，位于所述非像素区，所述第二电极连接部连接相邻所述第二电极，所述第二电极连接部与所述第二电极的材料相同；和纳米材料层，包括多个彼此分离的纳米岛状结构，所述纳米材料层至少位于所述第二电极连接部远离所述透光基底的一侧，用于使红外光对应的表面等离子激元激发。
可选地，所述第二电极连接部与所述纳米材料层的材料不同，所述第二电极连接部的材料包括镁、银、铝中的至少一种，所述纳米材料层的材料包括金、银、铅、铝、镁中的至少一种。
可选地，所述纳米岛状结构为周期性分布或非周期性分布；和/或所述纳米岛状结构呈长方体、正方体、圆锥体、棱台或半球体。
可选地，所述像素结构的发光方式为主动驱动方式，各个所述第二电极与各个所述第二电极连接部连接成一面电极。
可选地，所述第二电极远离所述透光基底的一侧具有所述纳米材料层。
可选地，所述像素结构的发光方式为被动驱动方式，所述非像素区具有第一电极连接部，位于同一第一方向的各个所述第一电极与各个所述第一电极连接部连接成一条状电极，位于同一第二方向的各个所述第二电极与各个所述第二电极连接部连接成一条状电极，所述第二方向与所述第一方向垂直。
可选地，所述第二电极远离所述透光基底的一侧具有所述纳米材料层。
本申请实施例的第二方面提供一种显示面板，包括透明显示区与非透明显示区，所述透明显示区包括上述任一项所述的透明显示面板。
本申请实施例的第三方面提供一种透明显示面板的制作方法，包括：提供透光基底，所述透光基底包括显示区，所述显示区包括交替分布的像素区与非像素区；在所述像素区形成像素结构，同时在所述非像素区形成第二电极连接部，其中，每一所述像素结构包括靠近所述透光基底的第一电极、远离所述透光基底的第二电极、以及所述第一电极与所述第二电极之间的发光块，所述第二电极的材料包括半透半反材料，所述第二电极连接部连接相邻所述第二电极，所述第二电极连接部与所述第二电极在同一工序中形成；至少在所述第二电极连接部远离所述透光基底的一侧形成纳米材料层，所述纳米材料层包括多个彼此分离的纳米岛状结构。
可选地，所述纳米岛状结构采用蒸镀法、刻蚀法或激光烧蚀法形成。
可选地，所述第二电极连接部与所述纳米材料层的材料不同，所述第二电极连接部的材料包括镁、银、铝中的至少一种，所述纳米材料层的材料包括金、银、铅、铝、镁中的至少一种。
可选地，所述纳米岛状结构为周期性分布或非周期性分布；和/或所述纳米岛状结构呈长方体、正方体、圆锥体、棱台或半球体。
可选地，所述像素结构的发光方式为主动驱动方式，所述在所述像素区形成像素结构，同时在所述非像素区形成第二电极连接部，包括：使各个所述第二电极与各个所述第二电极连接部连接成一面电极。
可选地，所述方法还包括：在所述第二电极远离所述透光基底的一侧形成所述纳米材料层。
可选地，所述像素结构的发光方式为被动驱动方式，所述在所述像素区形成像素结构，同时在所述非像素区形成第二电极连接部，包括：在所述非像素区形成第一电极连接部，使得位于同一第一方向的各个所述第一电极与各个所述第一电极连接部连接成一条状电极，在所述非像素区形成所述第二电极连接部，使得位于同一第二方向的各个所述第二电极与各个所述第二电极连接部连接成一条状电极，所述第二方向与所述第一方向垂直。
可选地，所述方法还包括：在所述第二电极远离所述透光基底的一侧形成所述纳米材料层。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本申请。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本申请的实施例，并与说明书一起用于解释本申请的原理。
图1是根据本申请一实施例示出的透明显示面板的俯视结构示意图；
图2是沿着图1中的AA线的剖视图；
图3是一种2T1C结构的像素驱动电路的电路图；
图4是根据本申请一实施例示出的透明显示面板的制作方法的流程图；
图5与图6是图4流程对应的中间结构示意图；
图7(a)与图7(b)是根据本申请另一实施例示出的两种透明显示面板的截面结构示意图；
图8是根据本申请又一实施例示出的透明显示面板的俯视结构示意图；
图9是沿着图8中的BB线的剖视图；
图10是根据本申请再一实施例示出的透明显示面板的俯视结构示意图；
图11是沿着图10中的CC线的剖视图；
图12是根据本申请另一实施例示出的透明显示面板的俯视结构示意图；
图13是沿着图12中的DD线的剖视图；
图14是根据本申请又一实施例示出的显示面板的俯视结构示意图。
具体实施方式
这里将详细地对示例性实施例进行说明，其示例表示在附图中。下面的描述涉及附图时，除非另有表示，不同附图中的相同数字表示相同或相似的要素。以下示例性实施例中所描述的实施方式并不代表与本申请相一致的所有实施方式。相反，它们仅是与如所附权利要求书中所详述的、本申请的一些方面相一致的装置和方法的例子。
在屏下设置TOF装置时，发射光首先要透过屏幕到达外部探测物体，然后反射光再次透过屏幕到达屏下接收传感器。为了接收到较强的反射光，屏幕在红外波段的透过率要求很高。
常用的有机发光二极管顶电极结构为半透明金属薄膜，其在可见光波段透过率约为40％-60％，红外波段透过率约为20％-40％。这就制约了整个屏幕的透过率，尤其是红外波段的透过率。目前屏幕在红外波段的透过率只有20-30％左右，不能满足屏下TOF的应用需求。需要说明的是，本申请中的红外光是指波长大于620nm。
图1是根据本申请一实施例示出的透明显示面板的俯视结构示意图，图2是沿着图1中的AA线的剖视图。
参照图1与图2所示，透明显示面板1，包括：
透光基底10，透光基底10包括显示区101，显示区101包括交替分布的像素区101a与非像素区101b；
像素结构11，位于像素区101a，每一像素结构11包括：靠近透光基底10的第一电极11a、远离透光基底10的第二电极11b以及第一电极11a与第二电极11b之间的发光块11c，第二电极11b的材料包括半透半反材料；
第二电极连接部12，位于非像素区101b，第二电极连接部12连接相邻第二电 极11b，第二电极连接部12与第二电极11b的材料相同；
以及纳米材料层13，包括多个彼此分离的纳米岛状结构13a，纳米材料层13至少位于第二电极连接部12远离透光基底10的一侧，用于使红外光对应的表面等离子激元激发，也用于散射红外光线。
参照图1与图2所示，透光基底10可以为柔性基底，也可以为硬质基底。柔性基底的材料可以为聚酰亚胺，硬质基底的材料可以为玻璃。
一些实施例中，透光基底10还可以包括围绕显示区101的非显示区(未标示)。非显示区可以用于设置电路，例如栅极驱动电路。一些实施例中，透光基底10可以仅包括显示区101。电路设置在显示区101或集成在其它芯片。
透光基底10上具有平坦化层PLN。平坦化层PLN远离透光基底10的一侧具有第一电极11a。第一电极11a以及未覆盖有第一电极11a的平坦化层PLN上设置有像素定义层PDL。像素定义层PDL具有暴露第一电极11a部分区域的开口，开口内设置有发光块11c。发光块11c以及像素定义层PDL上设置有第二电极11b以及第二电极连接部12。
发光块11c可以为红、绿或蓝，也可以为红、绿、蓝或黄。红绿蓝三基色或红绿蓝黄四基色的像素结构11交替分布。发光块11c的材料可以为有机发光材料(OLED)。
平坦化层PLN、像素定义层PDL的材料都可以为聚酰亚胺等透明材料。
第一电极11a可以为阳极，材料为透光材料或反光材料。透光材料可以为氧化铟锡(ITO)、铟锌氧化物(IZO)以及氧化铟镓锌(IGZO)中的至少一种。反光材料可以为银(Ag)及其合金、铝(Al)及其合金，例如银(Ag)、银和铅的合金(Ag：Pb)、铝和钕的合金(Al：Nd)、银铂铜的合金(Ag：Pt：Cu)等。当使用银及其合金作为反光材料时，在第一电极11a与发光块11c之间可以设置一层ITO、IZO或IGZO。
第二电极11b可以为阴极，材料可以为具有部分透光、部分反光功能的材料(半透半反材料)。第二电极11b可以为单层结构，该单层结构的材料可以包括镁、银、铝中的至少一种，例如为镁与银的混合物或铝与银的混合物。第二电极11b也可以为透明导电层、中间层、透明导电层构成的三层结构。透明导电层的材料可以为ITO、IZO以及IGZO中的至少一种。中间层的材料包括镁、银、铝中的至少一种，例如为镁与银的混合物或铝与银的混合物。换言之，透明显示面板1为顶发光结构。
本实施例中，像素结构11的发光方式为主动驱动发光(Active Matrix，AM)。因而，第一电极11a与透光基底10之间设置有像素驱动电路。
图3是一种2T1C结构的像素驱动电路的电路图。参照图3所示，像素驱动电路包括开关晶体管X1、驱动晶体管X2以及存储电容Cst。
开关晶体管X1的栅极与一行扫描信号线电连接。该行扫描信号Sn为开启电压时，开关晶体管X1将一列数据信号线上的数据信号VData保持在存储电容Cst的一个极板。该扫描信号Sn为关断电压时，存储电容Cst上保持的数据信号保持驱动晶体管X2打开，使得一列电源信号线上的电源信号VDD对一像素结构11的第一电极11a持续供电。
位于同一行的各色像素结构11的像素驱动电路可以连接至同一行扫描信号线，位于同一列的同色像素结构11的像素驱动电路可以连接至同一列数据信号线与同一列电源信号线。一些实施例中，存储电容Cst可由电源信号线与驱动晶体管X2的栅极重叠区域构成。
参照图2所示，本实施例中，像素驱动电路中的驱动晶体管X2包括：底栅141、栅极绝缘层142、有源层143、层间介质层ILD、源极144a、漏极144b以及钝化层PVX。开关晶体管X1中的各层可与驱动晶体管X2中的同一功能层位于同一层。换言之，开关晶体管X1与驱动晶体管X2为底栅结构。
开关晶体管X1的漏极144b与驱动晶体管X2的源极144a可通过导电插塞以及金属互连层连接。
一些实施例中，开关晶体管X1与驱动晶体管X2可以其中一个为底栅结构，另一个为顶栅结构，也可以两者都为顶栅结构。
一些实施例中，像素结构11的像素驱动电路还可以为3T1C、5T2C、6T1C、7T1C等相关技术中的电路结构，本实施例对此不加以限定。
参照图1所示，本实施例中，各个第二电极11b与各个第二电极连接部12连接成一面电极，以方便对各个第二电极11b施加电压。
一些实施例中，在行方向和列方向上，第二电极连接部12的宽度等于第二电极11b的宽度。
另一些实施例中，在行方向和/或列方向上，第二电极连接部12的宽度小于第二电极11b的宽度。换言之，面电极具有镂空区域。
第二电极连接部12与第二电极11b的材料相同。
一些实施例中，第二电极连接部12与第二电极11b都为单层结构，该单层结构的材料包括镁、银、铝中的至少一种，例如为镁与银的混合物或铝与银的混合物。此外，单层结构的材料还可以填入其它金属，例如钙等。
另一些实施例中，第二电极连接部12与第二电极11b都为透明导电层、中间层、透明导电层构成的三层结构。透明导电层的材料可以为ITO、IZO以及IGZO中的至少一种，中间层的材料包括镁、银、铝中的至少一种，例如为镁与银的混合物或铝与银的混合物。此外，中间层的材料还可以填入其它金属，例如钙等。
在一些实施例中，像素结构11的发光方式为被动驱动发光(Passive Matrix，PM)。因而，第一电极11a与透光基底10之间没有像素驱动电路。
纳米材料层13包括多个纳米岛状结构13a。一些实施例中，至少部分区域的各个彼此分离的纳米岛状结构13a为周期性分布，用于形成光栅；其它区域的纳米岛状结构13a为非周期性分布，用于形成粗糙表面。另一些实施例中，各个彼此分离的纳米岛状结构13a都为非周期性分布，用于形成粗糙表面。
一些实施例中，纳米材料层13的材料可以为Au、Ag、Pb、Al、Mg中的至少一种。
本实施例中，各纳米岛状结构13a呈圆锥体。在其他实施例中，纳米岛状结构13a呈长方体、正方体、棱台或半球体。
一些实施例中，纳米材料层13与各个第二电极11b远离透光基底10的一侧还可以设置有光提取层(CPL)或封装层(例如TFE薄膜)。
第二电极连接部12远离透光基底10一侧若未设置有纳米材料层13，则红外光在传播至金属(第二电极连接部12)与介质(例如光提取层或封装层)的交界面时，会产生表面等离子激元(Surface Plasma Polaritons，SPPs)。表面等离子激元是在金属表面区域的一种自由电子和光子相互作用而形成的混合激发态。也即在相同频率的光波照射下，表面近自由电子发生集体共振。由于表面等离子激元的波数大于同一频率下光子在真空中或周边介质中的波数，即波数不匹配，通常情况下表面等离子激元不能被激发而从金属表面辐射出去。
本实施例中，由于纳米材料层13的设置，多个纳米岛状结构13a形成光栅，可使入射的红外光线发生衍射，改变波数，匹配表面等离子激元的波数并使其激发，从而使得原本限定在第二电极连接部12内的红外光得以射出，多个纳米岛状结构13a形成的粗糙表面也可以散射红外光线，从而增加了红外光的透过率。
此外，由于红外光的波长大于可见光的波长，即红外光的波数小于可见光的波数，因而衍射光的波数更容易与红外光对应的表面等离子激元的波数匹配，从而红外光射出的概率大于可见光射出的概率。换言之，上述纳米材料层的设置，对可见光透过率改变不大，却使红外光透过率相对提升，因而非常适合屏下TOF的应用。
为验证本实施例的上述有益效果，本申请一实施例进行了对照实验。样品1与对照样品的透明显示面板1的结构及参数大致相同，第二电极连接部12的材料都为镁，区别仅在于：样品1设置了纳米材料层13，材料为银，厚度为2nm，第二电极连接部12的厚度为11nm；对照样品未设置纳米材料层13，第二电极连接部12的厚度为13nm。
下表为样品1与对照样品分别在入射波长为460nm、530nm、620nm、940nm时的透过率。
样品 460nm的透过率 530nm的透过率 620nm的透过率 940nm的透过率
对照样品 50.00％ 46.00％ 42.70％ 33.80％
样品1 50.20％ 42.10％ 45.20％ 52.90％
可见，纳米材料层的设置使得入射波长为620nm和940nm时的透过率均有所增加。
对于图1与图2中所示的透明显示面板1，本申请一实施例还提供一种制作方法。图4是制作方法的流程图。图5与图6是图4流程对应的中间结构示意图。
首先，参照图4中的步骤S1与图5所示，提供透光基底10，透光基底10包括显示区101，显示区101包括交替分布的像素区101a与非像素区101b。
透光基底10可以为柔性基底，也可以为硬质基底。柔性基底的材料可以为聚酰亚胺，硬质基底的材料可以为玻璃。
图5中，像素区101a与非像素区101b在行方向与列方向上都交替分布。
一些实施例中，像素区101a与非像素区101b可以仅在行方向交替分布，或仅在列方向上交替分布。
接着，参照图4中的步骤S2与图6所示，在像素区101a形成像素结构11，同时在非像素区101b形成第二电极连接部12。其中，每一像素结构11包括靠近透光基底10的第一电极11a、远离透光基底10的第二电极11b以及第一电极11a与第二电极11b之间的发光块11c，第二电极11b的材料可以为半透半反材料；第二电极连接部12连接相邻第二电极11b，第二电极连接部12与第二电极11b在同一工序中形成。
本实施例中，像素结构11的发光方式为主动驱动发光。主动驱动发光方式，也称有源驱动方式，由像素驱动电路对像素结构11施加电压，使其发光。因而，在像素区形成像素结构前，先在像素区101a形成像素驱动电路。
像素结构11为电流型器件，因而，像素驱动电路包括若干晶体管与存储电容。以下仍以图3中的2T1C结构为例，介绍像素驱动电路的制作工序。步骤S2可进一步包括步骤S21-S23。
步骤S21：在像素区101a的开关晶体管区与驱动晶体管区分别形成底栅141；在像素区101a与非像素区101b形成覆盖底栅141与透光基底10的栅极绝缘层142；在开关晶体管区与驱动晶体管区分别形成有源层143(包括源区、漏区以及源区与漏区之间的沟道区)；在像素区101a与非像素区101b形成覆盖有源层143与栅极绝缘层142的层间介质层ILD；在开关晶体管区与驱动晶体管区形成连接源区的源极144a与连接漏区的漏极144b；在像素区101a与非像素区101b形成覆盖源极144a、漏极144b以及层间介质层ILD的钝化层PVX；在开关晶体管区与驱动晶体管区形成连接开关晶体管X1的漏极144b与驱动晶体管X2的源极144a的导电插塞以及金属互连层。开关晶体管区为待形成开关晶体管的区域，驱动晶体管区为待形成驱动晶体管的区域。
一些实施例中，开关晶体管X1与驱动晶体管X2中的一个为底栅结构，另一个为顶栅结构，或两者都为顶栅结构。顶栅结构是指栅极较有源层143远离透光基底10的晶体管结构。
位于同一行的子像素结构11的像素驱动电路连接至同一行扫描信号线，位于同一列的同色像素结构11的像素驱动电路连接至同一列数据信号线与同一列电源信号线。扫描信号线可与底栅141在同一工序中形成。数据信号线、电源信号线可与源极144a/漏极144b在同一工序中形成。存储电容Cst可由电源信号线与驱动晶体管X2的栅极重叠区域构成。
一些实施例中，像素结构11的像素驱动电路还可以为3T1C、5T2C、6T1C、7T1C等相关技术中的电路结构，本实施例对此不加以限定。
步骤S22：在金属互连层与钝化层PVX上形成平坦化层PLN。
平坦化层PLN可以采用涂布法形成。平坦化层PLN的材料可以为聚酰亚胺等透明材料。
步骤S23：在平坦化层PLN远离透光基底10的一侧形成若干第一电极11a，每 一像素区101a具有一个第一电极11a；在各个第一电极11a以及平坦化层PLN远离透光基底10的一侧形成像素定义层PDL；在像素定义层PDL内形成若干开口，每一像素区101a具有一个开口；在各个开口内形成发光块11c；在各个发光块11c以及像素定义层PDL远离透光基底10的一侧形成第二电极11b以及第二电极连接部12，其中，第二电极11b位于像素区101a，第二电极连接部12位于非像素区101b。
关于第一电极11a的制备，可以先采用沉积法形成一整面第一电极材料层，后经干法刻蚀或湿法刻蚀形成若干个第一电极块作为第一电极11a。第一电极11a可以为阳极，材料为透光材料或反光材料。透光材料可以为ITO、IZO以及IGZO中的至少一种。反光材料可以包括银(Ag)及其合金、铝(Al)及其合金，例如银(Ag)、银和铅的合金(Ag：Pb)、铝和钕的合金(Al：Nd)、银铂铜的合金(Ag：Pt：Cu)等。当使用银及其合金作为反光材料时，在第一电极11a与发光块11c之间可以设置一层ITO、IZO或IGZO。
像素定义层PDL可以采用涂布法形成，像素定义层PDL内的开口可以采用刻蚀法形成。像素定义层PDL的材料可以为聚酰亚胺等透明材料。
发光块11c可以采用蒸镀法形成。
各个第二电极11b与各个第二电极连接部12可以连接成一面电极。第二电极11b以及第二电极连接部12可以采用溅射法或蒸镀法在同一工序中形成，因而两者材料可以相同。第二电极11b可以为阴极，材料为具有部分透光、部分反光功能的材料(半透半反材料)。第二电极11b可以为单层结构，该单层结构的材料可以包括镁、银、铝中的至少一种，例如为镁与银的混合物，或铝与银的混合物；也可以掺杂其它金属，例如钙。第二电极11b也可以为透明导电层、中间层、透明导电层构成的三层结构。透明导电层的材料可以为ITO、IZO以及IGZO中的至少一种，中间层的材料包括镁、银、铝中的至少一种，例如为镁与银的混合物，或铝与银的混合物；也可以掺杂其它金属，例如钙。
之后，参照图4中的步骤S3、图1与图2所示，在第二电极连接部12远离透光基底10的一侧形成纳米材料层13，纳米材料层13包括多个彼此分离的纳米岛状结构13a，用于使红外光对应的表面等离子激元激发和/或散射红外光。
纳米材料层13与第二电极连接部12的材料不同。由于两者材料不同，晶格并不能完全匹配，因而在第二电极连接部12上蒸镀异种材料时，更倾向于首先形成纳米岛状结构13a，而不会形成完整的膜。一些实施例中，纳米材料层13的材料可以为Au、Ag、Pb、Al、Mg中的至少一种。
一些实施例中，也可以增加蒸镀时间、或采用溅射法、物理气相沉积法、化学气相沉积法等形成完整膜，后通过刻蚀法或激光烧蚀法对完整膜图形化，形成多个彼此分离的纳米岛状结构13a。
一些实施例中，还可以在纳米材料层13与各个第二电极11b远离透光基底10的一侧形成光提取层(CPL)或封装层(例如TFE薄膜)。
图7(a)是根据本申请另一实施例示出的一种透明显示面板的截面结构示意图，图7(b)是另一种透明显示面板的截面结构示意图。参照图7(a)与图7(b)所示，本实施 例的透明显示面板2与图1至图2中的透明显示面板1的结构大致相同，区别仅在于：透明显示面板2中的各纳米岛状结构13a呈长方体或半球体。
一些实施例中，各纳米岛状结构13a还可以呈正方体或棱台等其它形状，本实施例对此不加以限定。
相应地，本实施例的透明显示面板2与图1至图2中的透明显示面板1的制作方法大致相同，区别仅在于：在制作透明显示面板2的步骤S3中，进一步通过控制各纳米岛状结构13a的材料种类、蒸镀时的各纳米岛状结构13a的密度、刻蚀时的腐蚀液或刻蚀气体或烧灼的时间长短及能量大小，实现对各纳米岛状结构13a的具体形状的控制。
图8是根据本申请又一实施例示出的透明显示面板的俯视结构示意图，图9是沿着图8中的BB线的剖视图。
参照图8与图9所示，本实施例的透明显示面板3与图1至图2、图7(b)中的透明显示面板1、2的结构大致相同，区别仅在于：在透明显示面板3中，各个第二电极11b远离透光基底10的一侧也具有纳米材料层13。
像素区101a中设置有纳米材料层13，纳米材料层中各个彼此分离的纳米岛状结构13a形成的光栅，在像素结构11不发光时，可使入射的红外光线发生衍射，改变波数，匹配表面等离子激元的波数并使其激发。这使得原本限定在第二电极11b内的红外光也得以射出，进一步增加了像素区101a的红外光的透过率。多个纳米岛状结构13a形成的粗糙表面也可以散射红外光线，进一步增加红外光的透过率。由此，更加满足屏下TOF的应用需求。
相应地，本实施例的透明显示面板3与图1、图2、图7(b)中的透明显示面板1、2的制作方法大致相同，区别仅在于：在制作透明显示面板3的步骤S3中，在第二电极连接部12远离透光基底10的一侧形成纳米材料层13时，也在各个第二电极11b远离透光基底10的一侧形成纳米材料层13。
纳米材料层13的形成方法可以参照前述实施例中的纳米材料层13的形成方法。
图10是根据本申请再一实施例示出的透明显示面板的俯视结构示意图，图11是沿着图10中的CC线的剖视图。
参照图10与图11所示，本实施例的透明显示面板4与图1至图2、图7(a)、图7(b)中的透明显示面板1、2的结构大致相同，区别在于：在透明显示面板4中，像素结构11的发光方式为被动驱动方式。透明显示面板4的非像素区101b还具有第一电极连接部15，位于同一第一方向的各个第一电极11a与各个第一电极连接部15连接成一条状电极，位于同一第二方向的各个第二电极11b与各个第二电极连接部12连接成一条状电极。第二方向与第一方向垂直。
此外，被动驱动发光方式(Passive Matrix，PM)，也称无源驱动方式，由行列交叉的条状电极在交叉处对像素结构11施加电压，使其发光。因而，第一电极11a与透光基底10之间无像素驱动电路。
图10中，第一方向为行方向，第二方向为列方向。一些实施例中，也可以第一 方向为列方向，第二方向为行方向。
第二电极连接部上设置有纳米材料层13，其中的各个彼此分离的纳米岛状结构13a可形成光栅使入射的红外光线发生衍射，改变波数，匹配表面等离子激元的波数并使其激发，进而使得原本限定在第二电极连接部12内的红外光得以射出，增加了非像素区101b的红外光的透过率。多个纳米岛状结构13a形成的粗糙表面也可以散射红外光线，增加红外光的透过率。由此，可满足屏下TOF的应用需求。
各个第一电极11a与各个第一电极连接部15可以位于同一层，两者材料相同，可以都为透光材料，例如ITO、IZO以及IGZO中的至少一种。
相应地，本实施例的透明显示面板4与图1至图2中的透明显示面板1的制作方法大致相同，区别仅在于：在制作透明显示面板4的步骤S2中，位于同一第二方向的各个第二电极连接部12将在同一第二方向的各个第二电极11b连接成一条状电极；同时还在非像素区101b形成第一电极连接部15，位于同一第一方向的各个第一电极连接部15将在同一第一方向的各个第一电极11a连接成一条状电极，第一电极连接部15与第一电极11a在同一工序中形成。
图12是根据本申请又一实施例示出的透明显示面板的俯视结构示意图，图13是沿着图12中的DD线的剖视图。
参照图12与图13所示，本实施例的透明显示面板5与图10至图11中的透明显示面板4的结构大致相同，区别仅在于：在透明显示面板5中，各个第二电极11b远离透光基底10的一侧也具有纳米材料层13。
像素区101a中设置有纳米材料层13，纳米材料层中的各个彼此分离的纳米岛状结构13a形成的光栅，在像素结构11不发光时，可使入射的红外光线发生衍射，改变波数，匹配表面等离子激元的波数并使其激发。这使得原本限定在第二电极11b内的红外光也得以射出，进一步增加了像素区101a的红外光的透过率。同时，多个纳米岛状结构13a形成的粗糙表面可以散射红外光线，进一步增加红外光的透过率。由此，可进一步满足屏下TOF的应用需求。
图14是根据本申请又一实施例示出的显示面板的俯视结构示意图。
参照图14所示，本实施例的显示面板6包括透明显示区61与非透明显示区62，透明显示区62可以为上述透明显示面板1、2、3、4、5中任一。
非透明显示区62可以包括非透明显示面板。非透明显示面板与上述透明显示面板1、2、3、4、5类似，区别仅在于：在非透明显示面板中，第一电极的材料为反光材料；此外，省略纳米材料层13。
一些实施例中，非透明显示面板的基底可以为非透光基底。
非透明显示面板可以与透明显示面板1、2、3、4、5装配一起。
一些实施例中，非透明显示区62可以与透明显示区61位于同一透光基底10上，区别仅在于：在非透明显示区62的像素结构中，第一电极的材料为反光材料；此外，可以省略或不省略纳米材料层13。
基于上述透明显示面板1、2、3、4、5或显示面板6，本申请一实施例还提供一种包括上述任一种透明显示面板1、2、3、4、5或显示面板6的显示装置。显示装置可以为：电子书、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
需要指出的是，在附图中，为了图示的清晰可能夸大了层和区域的尺寸。而且可以理解，当元件或层被称为在另一元件或层“上”时，它可以直接在其他元件上，或者可以存在中间的层。另外，可以理解，当元件或层被称为在另一元件或层“下”时，它可以直接在其他元件下，或者可以存在一个以上的中间的层或元件。另外，还可以理解，当层或元件被称为在两层或两个元件“之间”时，它可以为两层或两个元件之间唯一的层，或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。
在本申请中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性。
本领域技术人员在考虑说明书及实践这里公开的公开后，将容易想到本申请的其它实施方案。本申请旨在涵盖本申请的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本申请的一般性原理并包括本申请未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本申请的真正范围和精神由下面的权利要求指出。
应当理解的是，本申请并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本申请的范围仅由所附的权利要求来限制。

Claims (16)

  1. 一种透明显示面板，包括：
    透光基底，所述透光基底包括显示区，所述显示区包括交替分布的像素区与非像素区；
    像素结构，位于所述像素区，每一所述像素结构包括靠近所述透光基底的第一电极、远离所述透光基底的第二电极、以及所述第一电极与所述第二电极之间的发光块，所述第二电极的材料包括半透半反材料；
    第二电极连接部，位于所述非像素区，所述第二电极连接部连接相邻所述第二电极，所述第二电极连接部与所述第二电极的材料相同；和
    纳米材料层，包括多个彼此分离的纳米岛状结构，所述纳米材料层至少位于所述第二电极连接部远离所述透光基底的一侧，用于使红外光对应的表面等离子激元激发。
  2. 根据权利要求1所述的透明显示面板，其中，所述第二电极连接部与所述纳米材料层的材料不同，所述第二电极连接部的材料包括镁、银、铝中的至少一种，所述纳米材料层的材料包括金、银、铅、铝、镁中的至少一种。
  3. 根据权利要求1所述的透明显示面板，其中，
    所述纳米岛状结构为周期性分布或非周期性分布；和/或
    所述纳米岛状结构呈长方体、正方体、圆锥体、棱台或半球体。
  4. 根据权利要求1至3任一项所述的透明显示面板，其中，所述像素结构的发光方式为主动驱动方式，各个所述第二电极与各个所述第二电极连接部连接成一面电极。
  5. 根据权利要求4所述的透明显示面板，其中，所述第二电极远离所述透光基底的一侧具有所述纳米材料层。
  6. 根据权利要求1至3任一项所述的透明显示面板，其中，所述像素结构的发光方式为被动驱动方式，所述非像素区具有第一电极连接部，位于同一第一方向的各个所述第一电极与各个所述第一电极连接部连接成一条状电极，位于同一第二方向的各个所述第二电极与各个所述第二电极连接部连接成一条状电极，所述第二方向与所述第一方向垂直。
  7. 根据权利要求6所述的透明显示面板，其中，所述第二电极远离所述透光基底的一侧具有所述纳米材料层。
  8. 一种显示面板，包括透明显示区与非透明显示区，所述透明显示区包括权利要求1至7任一项所述的透明显示面板。
  9. 一种透明显示面板的制作方法，包括：
    提供透光基底，所述透光基底包括显示区，所述显示区包括交替分布的像素区与非像素区；
    在所述像素区形成像素结构，同时在所述非像素区形成第二电极连接部，其中，
    每一所述像素结构包括靠近所述透光基底的第一电极、远离所述透光基底的第二电极、以及所述第一电极与所述第二电极之间的发光块，所述第二电极的材料包括半透半反材料，
    所述第二电极连接部连接相邻所述第二电极，所述第二电极连接部与所述第二电极在同一工序中形成；
    至少在所述第二电极连接部远离所述透光基底的一侧形成纳米材料层，所述纳米材 料层包括多个彼此分离的纳米岛状结构。
  10. 根据权利要求9所述的透明显示面板的制作方法，其中，所述纳米岛状结构采用蒸镀法、刻蚀法或激光烧蚀法形成。
  11. 根据权利要求9或10所述的透明显示面板的制作方法，其中，所述第二电极连接部与所述纳米材料层的材料不同，所述第二电极连接部的材料包括镁、银、铝中的至少一种，所述纳米材料层的材料包括金、银、铅、铝、镁中的至少一种。
  12. 根据权利要求9-11中任一项所述的透明显示面板的制作方法，其中，
    所述纳米岛状结构为周期性分布或非周期性分布；和/或
    所述纳米岛状结构呈长方体、正方体、圆锥体、棱台或半球体。
  13. 根据权利要求9-12中任一项所述的透明显示面板的制作方法，其中，所述像素结构的发光方式为主动驱动方式，所述在所述像素区形成像素结构，同时在所述非像素区形成第二电极连接部，包括：
    使各个所述第二电极与各个所述第二电极连接部连接成一面电极。
  14. 根据权利要求13所述的透明显示面板的制作方法，还包括，在所述第二电极远离所述透光基底的一侧形成所述纳米材料层。
  15. 根据权利要求9-12中任一项所述的透明显示面板的制作方法，其中，所述像素结构的发光方式为被动驱动方式，所述在所述像素区形成像素结构，同时在所述非像素区形成第二电极连接部，包括：
    在所述非像素区形成第一电极连接部，使得位于同一第一方向的各个所述第一电极与各个所述第一电极连接部连接成一条状电极，在所述非像素区形成所述第二电极连接部，使得位于同一第二方向的各个所述第二电极与各个所述第二电极连接部连接成一条状电极，所述第二方向与所述第一方向垂直。
  16. 根据权利要求15所述的透明显示面板的制作方法，还包括，在所述第二电极远离所述透光基底的一侧形成所述纳米材料层。
PCT/CN2021/098452 2020-06-11 2021-06-04 显示面板、透明显示面板及其制作方法 WO2021249312A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/788,567 US20230039218A1 (en) 2020-06-11 2021-06-04 Display panels, transparent display panels and manufacturing methods therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010532070.7 2020-06-11
CN202010532070.7A CN111584611B (zh) 2020-06-11 2020-06-11 显示面板、透明显示面板及其制作方法

Publications (1)

Publication Number Publication Date
WO2021249312A1 true WO2021249312A1 (zh) 2021-12-16

Family

ID=72125890

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/098452 WO2021249312A1 (zh) 2020-06-11 2021-06-04 显示面板、透明显示面板及其制作方法

Country Status (3)

Country Link
US (1) US20230039218A1 (zh)
CN (1) CN111584611B (zh)
WO (1) WO2021249312A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111584611B (zh) * 2020-06-11 2022-11-04 京东方科技集团股份有限公司 显示面板、透明显示面板及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431454B1 (en) * 2015-02-27 2016-08-30 Kabushiki Kaisha Toshiba Imaging apparatus
CN109599035A (zh) * 2017-09-30 2019-04-09 昆山国显光电有限公司 显示屏及电子产品
CN110600508A (zh) * 2019-08-22 2019-12-20 武汉华星光电半导体显示技术有限公司 一种显示面板和显示装置
CN110867528A (zh) * 2019-12-18 2020-03-06 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN111584611A (zh) * 2020-06-11 2020-08-25 京东方科技集团股份有限公司 显示面板、透明显示面板及其制作方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106684260B (zh) * 2017-01-19 2019-02-15 昆山国显光电有限公司 显示器及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431454B1 (en) * 2015-02-27 2016-08-30 Kabushiki Kaisha Toshiba Imaging apparatus
CN109599035A (zh) * 2017-09-30 2019-04-09 昆山国显光电有限公司 显示屏及电子产品
CN110600508A (zh) * 2019-08-22 2019-12-20 武汉华星光电半导体显示技术有限公司 一种显示面板和显示装置
CN110867528A (zh) * 2019-12-18 2020-03-06 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN111584611A (zh) * 2020-06-11 2020-08-25 京东方科技集团股份有限公司 显示面板、透明显示面板及其制作方法

Also Published As

Publication number Publication date
CN111584611A (zh) 2020-08-25
CN111584611B (zh) 2022-11-04
US20230039218A1 (en) 2023-02-09

Similar Documents

Publication Publication Date Title
JP4475942B2 (ja) 表示装置及びその製造方法
EP3026725B1 (en) See-through organic light emitting display device and method for manufacturing the same
JP4439260B2 (ja) 表示装置の製造方法
US9666829B2 (en) Organic electroluminescent display device
JP6335496B2 (ja) アレイ基板及びその製造方法、ディスプレイ
US9685489B2 (en) OLED pixel structure and OLED display device
US9269925B2 (en) Array substrate including wavy transflective layer
WO2016082341A1 (zh) 有机电致发光器件、其制备方法以及显示装置
US11227903B2 (en) Organic light emitting display device having a reflective barrier and method of manufacturing the same
JP2005063838A (ja) 光学デバイス及び有機ｅｌ表示装置
KR102566090B1 (ko) 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법
KR101972169B1 (ko) 유기 발광 표시 장치 및 그 제조방법
JP2008515130A (ja) 有機ｅｌ表示装置
US9660219B2 (en) Methods of manufacturing display devices
JP2007095330A (ja) 発光装置、発光装置の製造方法および電子機器
JP2008513931A (ja) 有機ｅｌ表示装置及びその製造方法
KR20200021350A (ko) 발광 표시 장치
KR20210086898A (ko) 표시 장치 및 그 제조방법
JP2010272447A (ja) 有機ｅｌ装置、有機ｅｌ装置の製造方法、および電子機器
JP2009129604A (ja) 表示装置及び有機ｅｌ装置の製造方法、有機ｅｌ装置及び電子機器
JP2006107744A (ja) 有機エレクトロルミネッセンス表示装置
WO2021249312A1 (zh) 显示面板、透明显示面板及其制作方法
KR101993430B1 (ko) 마이크로 캐비티 구조를 갖는 유기발광 다이오드 표시 패널 및 그 제조 방법
TW202245291A (zh) 發光元件、包含發光元件之發光單元以及顯示裝置
JP2006107743A (ja) 有機エレクトロルミネッセンス表示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21820895

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21820895

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205 DATED 03/07/2023)

122 Ep: pct application non-entry in european phase

Ref document number: 21820895

Country of ref document: EP

Kind code of ref document: A1