WO2021249312A1 - 显示面板、透明显示面板及其制作方法 - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/82—Interconnections, e.g. terminals
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
Definitions
- This application relates to the technical field of display devices, and in particular to a display panel, a transparent display panel and a manufacturing method thereof.
- TOF time of flight
- the principle of TOF technology is to use a transmitter to emit laser light to an object, and then a sensor to receive the reflected laser signal, and then calculate the distance between the object and the mobile phone according to the round-trip time of the light, so that the reflection point can be determined.
- the signal wavelength of the TOF device is generally in the infrared band (such as 940 nm).
- the first aspect of the embodiments of the present application provides a transparent display panel, including: a light-transmitting substrate, the light-transmitting substrate includes a display area, the display area includes alternately distributed pixel areas and non-pixel areas; pixel structure, located in the In the pixel area, each of the pixel structures includes a first electrode close to the light-transmitting substrate, a second electrode far from the light-transmitting substrate, and a light-emitting block between the first electrode and the second electrode ,
- the material of the second electrode includes a transflective material; a second electrode connection part located in the non-pixel area, the second electrode connection part is connected to the adjacent second electrode, and the second electrode is connected
- the material of the second electrode is the same as that of the second electrode; and the nano material layer includes a plurality of nano island-like structures separated from each other, and the nano material layer is located at least on the side of the second electrode connection part away from the light-transmitting substrate , Used to excite the surface plasmons corresponding
- the material of the second electrode connection part is different from the material of the nano material layer, the material of the second electrode connection part includes at least one of magnesium, silver, and aluminum, and the material of the nano material layer includes At least one of gold, silver, lead, aluminum, and magnesium.
- the nano-island structure is periodically distributed or non-periodically distributed; and/or the nano-island structure is a cuboid, cube, cone, pyramid or hemisphere.
- the light emitting mode of the pixel structure is an active driving mode, and each of the second electrodes and each of the second electrode connecting portions are connected to form a surface electrode.
- the side of the second electrode away from the light-transmitting substrate has the nano-material layer.
- the light emitting mode of the pixel structure is a passive driving mode
- the non-pixel area has a first electrode connecting portion, and each of the first electrodes located in the same first direction is connected to each of the first electrode connecting portions
- Each of the second electrodes located in the same second direction and each of the second electrode connecting parts are connected to form a strip of electrodes, and the second direction is perpendicular to the first direction.
- the side of the second electrode away from the light-transmitting substrate has the nano-material layer.
- a second aspect of the embodiments of the present application provides a display panel including a transparent display area and a non-transparent display area, and the transparent display area includes the transparent display panel described in any one of the foregoing.
- a third aspect of the embodiments of the present application provides a method for manufacturing a transparent display panel, including: providing a light-transmitting substrate, the light-transmitting substrate includes a display area, the display area includes alternately distributed pixel areas and non-pixel areas; The pixel area forms a pixel structure, and at the same time a second electrode connecting portion is formed in the non-pixel area, wherein each of the pixel structures includes a first electrode close to the light-transmitting substrate, and a first electrode far from the light-transmitting substrate.
- the material of the second electrode includes a transflective material, and the second electrode connecting portion connects the adjacent second electrode ,
- the second electrode connection part and the second electrode are formed in the same process; at least a nano material layer is formed on the side of the second electrode connection part away from the light-transmitting substrate, and the nano material layer includes Nano island-like structures separated from each other.
- the nano-island structure is formed by an evaporation method, an etching method or a laser ablation method.
- the material of the second electrode connection part is different from the material of the nano material layer, the material of the second electrode connection part includes at least one of magnesium, silver, and aluminum, and the material of the nano material layer includes At least one of gold, silver, lead, aluminum, and magnesium.
- the nano-island structure is periodically distributed or non-periodically distributed; and/or the nano-island structure is a cuboid, cube, cone, pyramid or hemisphere.
- the light emitting mode of the pixel structure is an active driving mode
- the forming the pixel structure in the pixel area and simultaneously forming the second electrode connecting portion in the non-pixel area includes: making each of the second electrodes It is connected to each of the second electrode connecting portions to form a surface electrode.
- the method further includes: forming the nano-material layer on a side of the second electrode away from the light-transmitting substrate.
- the light emitting mode of the pixel structure is a passive driving mode
- the forming the pixel structure in the pixel area and simultaneously forming the second electrode connecting portion in the non-pixel area includes: forming in the non-pixel area
- the first electrode connecting portion is such that each of the first electrodes and each of the first electrode connecting portions located in the same first direction are connected to form a strip electrode
- the second electrode connecting portion is formed in the non-pixel area, so that Each of the second electrodes located in the same second direction and each of the second electrode connecting portions are connected to form a strip of electrodes, and the second direction is perpendicular to the first direction.
- the method further includes: forming the nano-material layer on a side of the second electrode away from the light-transmitting substrate.
- FIG. 1 is a schematic top view of a transparent display panel according to an embodiment of the present application
- Figure 2 is a cross-sectional view taken along line AA in Figure 1;
- Figure 3 is a circuit diagram of a pixel drive circuit with a 2T1C structure
- FIG. 4 is a flowchart of a method for manufacturing a transparent display panel according to an embodiment of the present application
- Figures 5 and 6 are schematic diagrams of intermediate structures corresponding to the process of Figure 4;
- FIG. 7(a) and FIG. 7(b) are schematic cross-sectional structure diagrams of two types of transparent display panels according to another embodiment of the present application.
- FIG. 8 is a schematic top view of a transparent display panel according to another embodiment of the present application.
- Figure 9 is a cross-sectional view taken along line BB in Figure 8.
- FIG. 10 is a schematic top view of a transparent display panel according to another embodiment of the present application.
- Figure 11 is a cross-sectional view taken along line CC in Figure 10;
- FIG. 12 is a schematic top view of a transparent display panel according to another embodiment of the present application.
- Figure 13 is a cross-sectional view taken along line DD in Figure 12;
- FIG. 14 is a schematic top view of the structure of a display panel according to another embodiment of the present application.
- the emitted light first passes through the screen to reach the external detection object, and then the reflected light passes through the screen again to reach the under-screen receiving sensor.
- the transmittance of the screen in the infrared band is required to be very high.
- the commonly used organic light-emitting diode top electrode structure is a semi-transparent metal film, and its transmittance in the visible light band is about 40%-60%, and the transmittance in the infrared band is about 20%-40%. This restricts the transmittance of the entire screen, especially the transmittance of the infrared band. At present, the transmittance of the screen in the infrared band is only about 20-30%, which cannot meet the application requirements of the TOF under the screen. It should be noted that the infrared light in this application refers to a wavelength greater than 620 nm.
- FIG. 1 is a schematic top view of a transparent display panel according to an embodiment of the present application
- FIG. 2 is a cross-sectional view along line AA in FIG. 1.
- the transparent display panel 1 includes:
- a light-transmitting substrate 10 includes a display area 101, and the display area 101 includes alternately distributed pixel areas 101a and non-pixel areas 101b;
- the pixel structure 11 is located in the pixel area 101a.
- Each pixel structure 11 includes: a first electrode 11a close to the light-transmitting substrate 10, a second electrode 11b far from the light-transmitting substrate 10, and a gap between the first electrode 11a and the second electrode 11b.
- the material of the second electrode 11b includes a transflective material;
- the second electrode connecting portion 12 is located in the non-pixel area 101b, the second electrode connecting portion 12 is connected to the adjacent second electrode 11b, and the material of the second electrode connecting portion 12 and the second electrode 11b are the same;
- the nano-material layer 13 includes a plurality of nano-island structures 13a separated from each other.
- the nano-material layer 13 is located at least on the side of the second electrode connecting portion 12 away from the light-transmitting substrate 10, and is used to make the surface plasmons corresponding to the infrared light Excitation is also used to scatter infrared light.
- the light-transmitting substrate 10 may be a flexible substrate or a rigid substrate.
- the material of the flexible substrate may be polyimide, and the material of the rigid substrate may be glass.
- the light-transmitting substrate 10 may further include a non-display area (not labeled) surrounding the display area 101.
- the non-display area can be used for setting circuits, such as gate driving circuits.
- the light-transmitting substrate 10 may only include the display area 101. The circuit is arranged in the display area 101 or integrated in other chips.
- the transparent substrate 10 has a planarization layer PLN.
- the planarization layer PLN has a first electrode 11 a on a side away from the light-transmitting substrate 10.
- a pixel definition layer PDL is provided on the first electrode 11a and the planarization layer PLN not covered with the first electrode 11a.
- the pixel definition layer PDL has an opening exposing a partial area of the first electrode 11a, and a light-emitting block 11c is disposed in the opening.
- the light-emitting block 11c and the pixel definition layer PDL are provided with a second electrode 11b and a second electrode connecting portion 12.
- the light-emitting block 11c may be red, green, or blue, or red, green, blue, or yellow.
- the pixel structures 11 of the three primary colors of red, green and blue or the four primary colors of red, green, blue and yellow are alternately distributed.
- the material of the light-emitting block 11c may be an organic light-emitting material (OLED).
- the materials of the planarization layer PLN and the pixel definition layer PDL can be transparent materials such as polyimide.
- the first electrode 11a may be an anode, and the material is a light-transmitting material or a light-reflecting material.
- the light-transmitting material may be at least one of indium tin oxide (ITO), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO).
- the reflective material can be silver (Ag) and its alloys, aluminum (Al) and its alloys, such as silver (Ag), alloys of silver and lead (Ag: Pb), alloys of aluminum and neodymium (Al: Nd), silver platinum Copper alloys (Ag:Pt:Cu), etc.
- a layer of ITO, IZO or IGZO may be provided between the first electrode 11a and the light-emitting block 11c.
- the second electrode 11b may be a cathode, and the material may be a material (semi-transmissive and semi-reflective material) with a function of partially transmitting light and partially reflecting light.
- the second electrode 11b may have a single-layer structure, and the material of the single-layer structure may include at least one of magnesium, silver, and aluminum, for example, a mixture of magnesium and silver or a mixture of aluminum and silver.
- the second electrode 11b may also have a three-layer structure composed of a transparent conductive layer, an intermediate layer, and a transparent conductive layer.
- the material of the transparent conductive layer may be at least one of ITO, IZO, and IGZO.
- the material of the intermediate layer includes at least one of magnesium, silver, and aluminum, for example, a mixture of magnesium and silver or a mixture of aluminum and silver.
- the transparent display panel 1 has a top-emitting structure.
- the light emitting mode of the pixel structure 11 is Active Matrix (AM). Therefore, a pixel driving circuit is provided between the first electrode 11 a and the light-transmitting substrate 10.
- AM Active Matrix
- FIG. 3 is a circuit diagram of a pixel driving circuit with a 2T1C structure.
- the pixel driving circuit includes a switching transistor X1, a driving transistor X2, and a storage capacitor Cst.
- the gate of the switching transistor X1 is electrically connected to a row of scanning signal lines.
- the switch transistor X1 maintains the data signal VData on a column of data signal lines on a plate of the storage capacitor Cst.
- the data signal held on the storage capacitor Cst keeps the driving transistor X2 turned on, so that the power signal VDD on a column of power signal lines continuously supplies power to the first electrode 11a of a pixel structure 11.
- the pixel driving circuits of the pixel structures 11 of each color in the same row can be connected to the same row of scanning signal lines, and the pixel driving circuits of the pixel structures 11 of the same color in the same column can be connected to the same column of data signal lines and the same column of power signal lines.
- the storage capacitor Cst may be formed by the overlapping area of the power signal line and the gate of the driving transistor X2.
- the driving transistor X2 in the pixel driving circuit includes: a bottom gate 141, a gate insulating layer 142, an active layer 143, an interlayer dielectric layer ILD, a source electrode 144a, a drain electrode 144b, and Passivation layer PVX.
- Each layer in the switching transistor X1 may be located on the same layer as the same functional layer in the driving transistor X2. In other words, the switching transistor X1 and the driving transistor X2 have a bottom gate structure.
- the drain 144b of the switching transistor X1 and the source 144a of the driving transistor X2 may be connected through a conductive plug and a metal interconnection layer.
- one of the switching transistor X1 and the driving transistor X2 may have a bottom gate structure and the other may have a top gate structure, or both may have a top gate structure.
- the pixel driving circuit of the pixel structure 11 may also be a circuit structure in related technologies such as 3T1C, 5T2C, 6T1C, 7T1C, etc., which is not limited in this embodiment.
- each second electrode 11b is connected to each second electrode connecting portion 12 to form a surface electrode, so as to facilitate the application of voltage to each second electrode 11b.
- the width of the second electrode connecting portion 12 is equal to the width of the second electrode 11b in the row direction and the column direction.
- the width of the second electrode connecting portion 12 is smaller than the width of the second electrode 11b.
- the surface electrode has a hollow area.
- the material of the second electrode connecting portion 12 is the same as that of the second electrode 11b.
- both the second electrode connecting portion 12 and the second electrode 11b have a single-layer structure
- the material of the single-layer structure includes at least one of magnesium, silver, and aluminum, such as a mixture of magnesium and silver or a mixture of aluminum and aluminum. A mixture of silver.
- the material of the single-layer structure can also be filled with other metals, such as calcium.
- both the second electrode connecting portion 12 and the second electrode 11b have a three-layer structure composed of a transparent conductive layer, an intermediate layer, and a transparent conductive layer.
- the material of the transparent conductive layer may be at least one of ITO, IZO, and IGZO
- the material of the intermediate layer includes at least one of magnesium, silver, and aluminum, for example, a mixture of magnesium and silver or a mixture of aluminum and silver.
- the material of the intermediate layer can also be filled with other metals, such as calcium.
- the light emitting mode of the pixel structure 11 is Passive Matrix (PM). Therefore, there is no pixel driving circuit between the first electrode 11 a and the light-transmitting substrate 10.
- PM Passive Matrix
- the nano-material layer 13 includes a plurality of nano-island structures 13a.
- the nano island structures 13a separated from each other in at least a part of the area are periodically distributed and used to form a grating; the nano island structures 13a in other areas are non-periodically distributed and used to form a rough surface.
- each of the separated nano island structures 13a is aperiodicly distributed to form a rough surface.
- the material of the nano-material layer 13 may be at least one of Au, Ag, Pb, Al, and Mg.
- each nano-island structure 13a is a cone. In other embodiments, the nano-island structure 13a is in the form of a rectangular parallelepiped, cube, pyramid or hemisphere.
- a light extraction layer (CPL) or an encapsulation layer (such as a TFE film) may be provided on the side of the nanomaterial layer 13 and each second electrode 11b away from the light-transmitting substrate 10.
- the infrared light will propagate to the intersection of the metal (the second electrode connecting portion 12) and the medium (for example, a light extraction layer or an encapsulation layer).
- the medium for example, a light extraction layer or an encapsulation layer.
- surface plasmons Surface Plasma Polaritos, SPPs
- Surface plasmon is a mixed excited state formed by the interaction of free electrons and photons in the metal surface area. That is, under the irradiation of light waves of the same frequency, the free electrons on the surface collectively resonate. Because the wave number of surface plasmons is greater than the wave number of photons in vacuum or surrounding media at the same frequency, that is, the wave numbers are not matched, surface plasmons cannot be excited and radiate from the metal surface under normal circumstances.
- multiple nano-island structures 13a form a grating, which can diffract the incident infrared light, change the wave number, match the wave number of the surface plasmon and excite it, so that the original
- the infrared light confined in the second electrode connecting portion 12 can be emitted, and the rough surface formed by the plurality of nano-island structures 13a can also scatter the infrared light, thereby increasing the transmittance of the infrared light.
- the wavenumber of infrared light is less than that of visible light
- the wavenumber of diffracted light is more likely to match the wavenumber of the surface plasmon corresponding to infrared light, so that the probability of infrared light emission is greater than that of visible light. Probability of shooting.
- the arrangement of the above-mentioned nano-material layer has little change in the visible light transmittance, but relatively increases the infrared light transmittance, so it is very suitable for under-screen TOF applications.
- the structure and parameters of the transparent display panel 1 of the sample 1 and the control sample are roughly the same.
- the material of the second electrode connection part 12 is magnesium, and the difference is that: the sample 1 is provided with a nano-material layer 13, the material is silver, and the thickness is 2nm.
- the thickness of the second electrode connection portion 12 is 11 nm; the control sample is not provided with the nano material layer 13, and the thickness of the second electrode connection portion 12 is 13 nm.
- the following table shows the transmittance of sample 1 and control sample at incident wavelengths of 460nm, 530nm, 620nm, and 940nm, respectively.
- the arrangement of the nano-material layer increases the transmittance when the incident wavelength is 620nm and 940nm.
- FIG. 4 is a flow chart of the manufacturing method.
- 5 and 6 are schematic diagrams of intermediate structures corresponding to the flow in FIG. 4.
- a light-transmitting substrate 10 is provided.
- the light-transmitting substrate 10 includes a display area 101.
- the display area 101 includes alternately distributed pixel areas 101a and non-pixel areas 101b.
- the light-transmitting substrate 10 may be a flexible substrate or a rigid substrate.
- the material of the flexible substrate may be polyimide, and the material of the rigid substrate may be glass.
- the pixel regions 101a and the non-pixel regions 101b are alternately distributed in the row direction and the column direction.
- the pixel regions 101a and the non-pixel regions 101b may only be alternately distributed in the row direction, or only alternately distributed in the column direction.
- each pixel structure 11 includes a first electrode 11a close to the light-transmitting substrate 10, a second electrode 11b far from the light-transmitting substrate 10, a light-emitting block 11c between the first electrode 11a and the second electrode 11b, and the second electrode 11b
- the material of may be a semi-transparent and semi-reflective material; the second electrode connecting portion 12 is connected to the adjacent second electrode 11b, and the second electrode connecting portion 12 and the second electrode 11b are formed in the same process.
- the light emitting mode of the pixel structure 11 is actively driven to emit light.
- the pixel driving circuit applies a voltage to the pixel structure 11 to cause it to emit light. Therefore, before forming the pixel structure in the pixel area, a pixel driving circuit is formed in the pixel area 101a first.
- the pixel structure 11 is a current-type device. Therefore, the pixel driving circuit includes a number of transistors and storage capacitors. The following still takes the 2T1C structure in FIG. 3 as an example to introduce the manufacturing process of the pixel driving circuit. Step S2 may further include steps S21-S23.
- Step S21 forming a bottom gate 141 in the switching transistor region and the driving transistor region of the pixel region 101a, respectively; forming a gate insulating layer 142 covering the bottom gate 141 and the transparent substrate 10 in the pixel region 101a and the non-pixel region 101b;
- the active layer 143 (including the source region, the drain region, and the channel region between the source region and the drain region) is formed in the pixel region and the driving transistor region;
- the interlayer dielectric layer ILD of the insulating layer 142; the source electrode 144a connected to the source area and the drain electrode 144b connected to the drain area are formed in the switching transistor area and the driving transistor area; the covering source electrode 144a is formed in the pixel area 101a and the non-pixel area 101b,
- one of the switching transistor X1 and the driving transistor X2 has a bottom gate structure, the other has a top gate structure, or both of them have a top gate structure.
- the top gate structure refers to a transistor structure in which the gate electrode is farther away from the transparent substrate 10 than the active layer 143 is.
- the pixel driving circuits of the sub-pixel structures 11 in the same row are connected to the same row of scanning signal lines, and the pixel driving circuits of the same-color pixel structures 11 in the same column are connected to the same column of data signal lines and the same column of power signal lines.
- the scan signal line and the bottom gate 141 can be formed in the same process.
- the data signal line and the power signal line can be formed in the same process as the source electrode 144a/drain electrode 144b.
- the storage capacitor Cst may be formed by the overlapping area of the power signal line and the gate of the driving transistor X2.
- the pixel driving circuit of the pixel structure 11 may also be a circuit structure in related technologies such as 3T1C, 5T2C, 6T1C, 7T1C, etc., which is not limited in this embodiment.
- Step S22 forming a planarization layer PLN on the metal interconnection layer and the passivation layer PVX.
- the planarization layer PLN can be formed by a coating method.
- the material of the planarization layer PLN may be a transparent material such as polyimide.
- Step S23 A number of first electrodes 11a are formed on the side of the planarization layer PLN away from the light-transmitting substrate 10.
- Each pixel area 101a has a first electrode 11a; each first electrode 11a and the planarization layer PLN are away from the light-transmitting substrate
- a pixel definition layer PDL is formed on one side of 10; a number of openings are formed in the pixel definition layer PDL, and each pixel area 101a has an opening; a light-emitting block 11c is formed in each opening; each light-emitting block 11c and the pixel definition layer PDL are far away from the transparent
- a second electrode 11b and a second electrode connecting portion 12 are formed on one side of the photo substrate 10, wherein the second electrode 11b is located in the pixel area 101a, and the second electrode connecting portion 12 is located in the non-pixel area 101b.
- a deposition method may be used to form a first electrode material layer on the entire surface, and then a plurality of first electrode blocks may be formed as the first electrode 11a by dry etching or wet etching.
- the first electrode 11a may be an anode, and the material is a light-transmitting material or a light-reflecting material.
- the light-transmitting material may be at least one of ITO, IZO, and IGZO.
- the reflective material may include silver (Ag) and its alloys, aluminum (Al) and its alloys, such as silver (Ag), alloys of silver and lead (Ag: Pb), alloys of aluminum and neodymium (Al: Nd), silver platinum Copper alloys (Ag:Pt:Cu), etc.
- a layer of ITO, IZO or IGZO may be provided between the first electrode 11a and the light-emitting block 11c.
- the pixel definition layer PDL can be formed by a coating method, and the opening in the pixel definition layer PDL can be formed by an etching method.
- the material of the pixel definition layer PDL may be a transparent material such as polyimide.
- the light-emitting block 11c can be formed by an evaporation method.
- Each second electrode 11b and each second electrode connecting portion 12 may be connected to form a surface electrode.
- the second electrode 11b and the second electrode connecting portion 12 can be formed in the same process using a sputtering method or an evaporation method, and therefore the materials of the two can be the same.
- the second electrode 11b may be a cathode, and the material is a material (semi-transmissive and semi-reflective material) with partial light-transmitting and partial light-reflecting functions.
- the second electrode 11b may have a single-layer structure, and the material of the single-layer structure may include at least one of magnesium, silver, and aluminum, such as a mixture of magnesium and silver, or a mixture of aluminum and silver; it may also be doped with other metals , Such as calcium.
- the second electrode 11b may also have a three-layer structure composed of a transparent conductive layer, an intermediate layer, and a transparent conductive layer.
- the material of the transparent conductive layer may be at least one of ITO, IZO, and IGZO, and the material of the intermediate layer includes at least one of magnesium, silver, and aluminum, such as a mixture of magnesium and silver, or a mixture of aluminum and silver; It can be doped with other metals, such as calcium.
- a nano-material layer 13 is formed on the side of the second electrode connecting portion 12 away from the light-transmitting substrate 10.
- the nano-material layer 13 includes a plurality of nanomaterials separated from each other.
- the island structure 13a is used to excite and/or scatter the infrared light corresponding to the surface plasmons of the infrared light.
- the material of the nano-material layer 13 and the second electrode connecting portion 12 are different. Since the two materials are different, the crystal lattice cannot be completely matched. Therefore, when evaporating dissimilar materials on the second electrode connecting portion 12, it is more inclined to form the nano-island structure 13a first, rather than forming a complete film.
- the material of the nano-material layer 13 may be at least one of Au, Ag, Pb, Al, and Mg.
- a light extraction layer (CPL) or an encapsulation layer (such as a TFE film) may also be formed on the side of the nano material layer 13 and each second electrode 11 b away from the light-transmitting substrate 10.
- FIG. 7(a) is a schematic cross-sectional structure diagram of a transparent display panel according to another embodiment of the present application
- FIG. 7(b) is a schematic cross-sectional structure diagram of another transparent display panel.
- the transparent display panel 2 of this embodiment has roughly the same structure as the transparent display panel 1 in FIGS. 1 to 2, except that:
- Each nano-island structure 13a is a rectangular parallelepiped or a hemisphere.
- each nano-island structure 13a may also have other shapes such as a cube or a prism, which is not limited in this embodiment.
- the manufacturing method of the transparent display panel 2 of this embodiment is substantially the same as that of the transparent display panel 1 in FIGS.
- the type of material of the nano-shaped structure 13a, the density of each nano-island structure 13a during evaporation, the etching solution or etching gas or the length of time and energy of the burning time during etching, realize the specific shape of each nano-island structure 13a control.
- FIG. 8 is a schematic top view of a transparent display panel according to another embodiment of the present application
- FIG. 9 is a cross-sectional view along line BB in FIG. 8.
- the transparent display panel 3 of this embodiment has roughly the same structure as the transparent display panels 1 and 2 in Figures 1 to 2 and Figure 7(b), with the only difference being: in the transparent display panel In 3, the side of each second electrode 11b away from the transparent substrate 10 also has a nano-material layer 13.
- the pixel area 101a is provided with a nano-material layer 13.
- the grating formed by the nano-island structures 13a separated from each other in the nano-material layer can diffract the incident infrared light when the pixel structure 11 does not emit light, change the wave number, and match the surface The wave number of the plasmon and make it excited. This allows the infrared light originally confined in the second electrode 11b to be emitted, which further increases the transmittance of the infrared light in the pixel area 101a.
- the rough surface formed by the plurality of nano-island structures 13a can also scatter infrared light and further increase the transmittance of infrared light. As a result, the application requirements of the TOF under the screen are more satisfied.
- the transparent display panel 3 of this embodiment is roughly the same as the transparent display panels 1 and 2 in FIG. 1, FIG. 2, and FIG.
- the nano-material layer 13 is formed on the side of the second electrode connecting portion 12 away from the light-transmitting substrate 10
- the nano-material layer 13 is also formed on the side of each second electrode 11 b away from the light-transmitting substrate 10.
- the method for forming the nano-material layer 13 can refer to the method for forming the nano-material layer 13 in the foregoing embodiment.
- FIG. 10 is a schematic top view of a transparent display panel according to another embodiment of the present application
- FIG. 11 is a cross-sectional view taken along line CC in FIG. 10.
- the transparent display panel 4 of this embodiment has substantially the same structure as the transparent display panels 1 and 2 in FIGS. 1 to 2, 7(a), and 7(b), with the difference being :
- the light emitting mode of the pixel structure 11 is a passive driving mode.
- the non-pixel area 101b of the transparent display panel 4 also has a first electrode connecting portion 15.
- Each first electrode 11a located in the same first direction and each first electrode connecting portion 15 are connected to form a strip of electrodes, each located in the same second direction
- the second electrode 11b is connected to each second electrode connecting portion 12 to form a strip electrode.
- the second direction is perpendicular to the first direction.
- PM passive matrix
- a voltage is applied to the pixel structure 11 at the intersection of the row and column strip electrodes to make the pixel structure 11 emit light. Therefore, there is no pixel driving circuit between the first electrode 11 a and the transparent substrate 10.
- the first direction is the row direction
- the second direction is the column direction.
- the first direction may be the column direction and the second direction may be the row direction.
- the second electrode connection part is provided with a nano-material layer 13
- each of the separated nano-island structures 13a can form a grating to diffract the incident infrared light, change the wave number, match the wave number of the surface plasmon and make it excited,
- the infrared light originally confined in the second electrode connecting portion 12 can be emitted, and the transmittance of infrared light in the non-pixel area 101b is increased.
- the rough surface formed by the plurality of nano-island structures 13a can also scatter infrared light and increase the transmittance of infrared light. As a result, the application requirements of the TOF under the screen can be met.
- Each first electrode 11a and each first electrode connecting portion 15 may be located on the same layer, and the materials of the two may be the same, and both may be light-transmitting materials, such as at least one of ITO, IZO, and IGZO.
- the transparent display panel 4 of this embodiment is roughly the same as the transparent display panel 1 in FIG. 1 to FIG.
- Each second electrode connecting portion 12 connects each second electrode 11b in the same second direction into a strip electrode; at the same time, a first electrode connecting portion 15 is formed in the non-pixel area 101b, and each first electrode located in the same first direction
- the connecting portion 15 connects the respective first electrodes 11 a in the same first direction into a strip of electrodes, and the first electrode connecting portion 15 and the first electrode 11 a are formed in the same process.
- FIG. 12 is a schematic top view of a transparent display panel according to another embodiment of the present application
- FIG. 13 is a cross-sectional view taken along line DD in FIG. 12.
- the transparent display panel 5 of this embodiment has substantially the same structure as the transparent display panel 4 in FIGS. 10 to 11, except that: in the transparent display panel 5, each second electrode 11b The side away from the light-transmitting substrate 10 also has a nano-material layer 13.
- a nano-material layer 13 is provided in the pixel area 101a.
- the grating formed by the nano-island structures 13a separated from each other in the nano-material layer can diffract the incident infrared light, change the wave number, and match when the pixel structure 11 does not emit light.
- the rough surface formed by the plurality of nano-island structures 13a can scatter infrared light and further increase the transmittance of infrared light. As a result, the application requirements of the under-screen TOF can be further satisfied.
- FIG. 14 is a schematic top view of the structure of a display panel according to another embodiment of the present application.
- the display panel 6 of this embodiment includes a transparent display area 61 and a non-transparent display area 62.
- the transparent display area 62 can be any of the above-mentioned transparent display panels 1, 2, 3, 4, and 5.
- the non-transparent display area 62 may include a non-transparent display panel.
- the non-transparent display panel is similar to the above-mentioned transparent display panels 1, 2, 3, 4, 5, except that: in the non-transparent display panel, the material of the first electrode is a light-reflecting material; in addition, the nano-material layer 13 is omitted.
- the substrate of the non-transparent display panel may be a non-transparent substrate.
- the non-transparent display panel can be assembled with the transparent display panels 1, 2, 3, 4, and 5.
- the non-transparent display area 62 and the transparent display area 61 may be located on the same light-transmitting substrate 10. The only difference is: in the pixel structure of the non-transparent display area 62, the material of the first electrode is a light-reflecting material; in addition, The nano-material layer 13 may be omitted or not.
- an embodiment of the present application also provides a device including any of the foregoing transparent display panels 1, 2, 3, 4, 5 or display panel 6.
- Display device can be any product or component with a display function, such as an e-book, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator, and so on.
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Abstract
Description
样品 | 460nm的透过率 | 530nm的透过率 | 620nm的透过率 | 940nm的透过率 |
对照样品 | 50.00% | 46.00% | 42.70% | 33.80% |
样品1 | 50.20% | 42.10% | 45.20% | 52.90% |
Claims (16)
- 一种透明显示面板,包括:透光基底,所述透光基底包括显示区,所述显示区包括交替分布的像素区与非像素区;像素结构,位于所述像素区,每一所述像素结构包括靠近所述透光基底的第一电极、远离所述透光基底的第二电极、以及所述第一电极与所述第二电极之间的发光块,所述第二电极的材料包括半透半反材料;第二电极连接部,位于所述非像素区,所述第二电极连接部连接相邻所述第二电极,所述第二电极连接部与所述第二电极的材料相同;和纳米材料层,包括多个彼此分离的纳米岛状结构,所述纳米材料层至少位于所述第二电极连接部远离所述透光基底的一侧,用于使红外光对应的表面等离子激元激发。
- 根据权利要求1所述的透明显示面板,其中,所述第二电极连接部与所述纳米材料层的材料不同,所述第二电极连接部的材料包括镁、银、铝中的至少一种,所述纳米材料层的材料包括金、银、铅、铝、镁中的至少一种。
- 根据权利要求1所述的透明显示面板,其中,所述纳米岛状结构为周期性分布或非周期性分布;和/或所述纳米岛状结构呈长方体、正方体、圆锥体、棱台或半球体。
- 根据权利要求1至3任一项所述的透明显示面板,其中,所述像素结构的发光方式为主动驱动方式,各个所述第二电极与各个所述第二电极连接部连接成一面电极。
- 根据权利要求4所述的透明显示面板,其中,所述第二电极远离所述透光基底的一侧具有所述纳米材料层。
- 根据权利要求1至3任一项所述的透明显示面板,其中,所述像素结构的发光方式为被动驱动方式,所述非像素区具有第一电极连接部,位于同一第一方向的各个所述第一电极与各个所述第一电极连接部连接成一条状电极,位于同一第二方向的各个所述第二电极与各个所述第二电极连接部连接成一条状电极,所述第二方向与所述第一方向垂直。
- 根据权利要求6所述的透明显示面板,其中,所述第二电极远离所述透光基底的一侧具有所述纳米材料层。
- 一种显示面板,包括透明显示区与非透明显示区,所述透明显示区包括权利要求1至7任一项所述的透明显示面板。
- 一种透明显示面板的制作方法,包括:提供透光基底,所述透光基底包括显示区,所述显示区包括交替分布的像素区与非像素区;在所述像素区形成像素结构,同时在所述非像素区形成第二电极连接部,其中,每一所述像素结构包括靠近所述透光基底的第一电极、远离所述透光基底的第二电极、以及所述第一电极与所述第二电极之间的发光块,所述第二电极的材料包括半透半反材料,所述第二电极连接部连接相邻所述第二电极,所述第二电极连接部与所述第二电极在同一工序中形成;至少在所述第二电极连接部远离所述透光基底的一侧形成纳米材料层,所述纳米材 料层包括多个彼此分离的纳米岛状结构。
- 根据权利要求9所述的透明显示面板的制作方法,其中,所述纳米岛状结构采用蒸镀法、刻蚀法或激光烧蚀法形成。
- 根据权利要求9或10所述的透明显示面板的制作方法,其中,所述第二电极连接部与所述纳米材料层的材料不同,所述第二电极连接部的材料包括镁、银、铝中的至少一种,所述纳米材料层的材料包括金、银、铅、铝、镁中的至少一种。
- 根据权利要求9-11中任一项所述的透明显示面板的制作方法,其中,所述纳米岛状结构为周期性分布或非周期性分布;和/或所述纳米岛状结构呈长方体、正方体、圆锥体、棱台或半球体。
- 根据权利要求9-12中任一项所述的透明显示面板的制作方法,其中,所述像素结构的发光方式为主动驱动方式,所述在所述像素区形成像素结构,同时在所述非像素区形成第二电极连接部,包括:使各个所述第二电极与各个所述第二电极连接部连接成一面电极。
- 根据权利要求13所述的透明显示面板的制作方法,还包括,在所述第二电极远离所述透光基底的一侧形成所述纳米材料层。
- 根据权利要求9-12中任一项所述的透明显示面板的制作方法,其中,所述像素结构的发光方式为被动驱动方式,所述在所述像素区形成像素结构,同时在所述非像素区形成第二电极连接部,包括:在所述非像素区形成第一电极连接部,使得位于同一第一方向的各个所述第一电极与各个所述第一电极连接部连接成一条状电极,在所述非像素区形成所述第二电极连接部,使得位于同一第二方向的各个所述第二电极与各个所述第二电极连接部连接成一条状电极,所述第二方向与所述第一方向垂直。
- 根据权利要求15所述的透明显示面板的制作方法,还包括,在所述第二电极远离所述透光基底的一侧形成所述纳米材料层。
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US9431454B1 (en) * | 2015-02-27 | 2016-08-30 | Kabushiki Kaisha Toshiba | Imaging apparatus |
CN109599035A (zh) * | 2017-09-30 | 2019-04-09 | 昆山国显光电有限公司 | 显示屏及电子产品 |
CN110600508A (zh) * | 2019-08-22 | 2019-12-20 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板和显示装置 |
CN110867528A (zh) * | 2019-12-18 | 2020-03-06 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法、显示装置 |
CN111584611A (zh) * | 2020-06-11 | 2020-08-25 | 京东方科技集团股份有限公司 | 显示面板、透明显示面板及其制作方法 |
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