WO2021223207A1 - 自旋轨道矩磁性器件、磁性隧道结器件及磁存储器 - Google Patents
自旋轨道矩磁性器件、磁性隧道结器件及磁存储器 Download PDFInfo
- Publication number
- WO2021223207A1 WO2021223207A1 PCT/CN2020/089143 CN2020089143W WO2021223207A1 WO 2021223207 A1 WO2021223207 A1 WO 2021223207A1 CN 2020089143 W CN2020089143 W CN 2020089143W WO 2021223207 A1 WO2021223207 A1 WO 2021223207A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- magnetic
- layer
- free layer
- spin
- magnetic free
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 298
- 230000008878 coupling Effects 0.000 claims abstract description 33
- 238000010168 coupling process Methods 0.000 claims abstract description 33
- 238000005859 coupling reaction Methods 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 230000005290 antiferromagnetic effect Effects 0.000 claims abstract description 6
- 230000003993 interaction Effects 0.000 claims abstract description 5
- 230000005415 magnetization Effects 0.000 claims description 32
- 230000005641 tunneling Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 14
- 238000009825 accumulation Methods 0.000 claims description 12
- 230000005303 antiferromagnetism Effects 0.000 claims description 5
- 230000006378 damage Effects 0.000 claims description 3
- 230000010287 polarization Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 description 27
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 10
- 239000000395 magnesium oxide Substances 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 229910019236 CoFeB Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910005335 FePt Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 description 2
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 description 2
- SDVIPADSGIIEHD-UHFFFAOYSA-N cobalt terbium Chemical compound [Co].[Tb] SDVIPADSGIIEHD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005308 ferrimagnetism Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 229910001291 heusler alloy Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
Definitions
- This application relates to the field of magnetic memory technology, and in particular to a spin-orbit moment magnetic device, a magnetic tunnel junction device and a magnetic memory.
- Magnetic memory is a new type of non-volatile memory that uses magnetic moment magnetization direction up or down to store data "0" or "1". It is one of the key technologies to solve the bottleneck problem of chip power consumption in the post-Moore era.
- Spin orbit torque (Spin Orbit Torque, SOT) is one of the important ways to manipulate the magnetization of magnetic memory by electric current.
- SOT flip uses the strong spin-orbit coupling (SOC) effect in the heavy metal lead layer to convert the laterally applied current into a spin current, forming spin accumulation at the interface of the heavy metal layer or the magnetic layer, and Under the action of an external in-plane magnetic field, the perpendicular magnetic anisotropy magnetic tunnel junction is flipped.
- SOC spin-orbit coupling
- the existing method only uses single-interface spin accumulation, and there is room for further improvement of the magnetization flip efficiency. Therefore, research on more efficient magnetization flip methods is the focus of research in this field.
- This application provides a spin-orbit moment magnetic device, a magnetic tunnel junction device and a magnetic memory.
- a spin-orbit moment magnetic device in one aspect of the present application, includes a first magnetic free layer, a metal coupling layer, and a second magnetic free layer. Above the first magnetic free layer, the second magnetic free layer is disposed above the metal coupling layer; the first magnetic free layer and the second magnetic free layer have perpendicular magnetic anisotropy; The metal coupling layer is used to provide exchange interaction so that the first magnetic free layer and the second magnetic free layer realize antiferromagnetic coupling.
- the spin-orbit moment magnetic device when supplied with a current that is substantially parallel to the in-plane direction, the first magnetic free layer and the second magnetic free layer generate vertical spin currents, so The spin flow on the lower surface of the first magnetic free layer and the upper surface of the second magnetic free layer generates spin accumulation with opposite polarization directions, and the spin accumulation is used to drive the first magnetic free layer.
- the magnetization directions of the layer and the second magnetic free layer are reversed.
- the spin-orbit moment magnetic device of the present application further includes: a substrate layer disposed under the first magnetic free layer; the substrate layer is used to absorb and scatter the spins generated by the first magnetic free layer flow.
- the substrate layer has antiferromagnetism and is used to form a symmetric destruction field.
- a magnetic tunnel junction device in another aspect of the present application, includes: a device part composed of a tunneling layer, a fixed magnetic layer, and a magnetic pinning layer, and the spin The lead layer part composed of the orbital moment magnetic device; the tunneling layer is arranged above the second magnetic free layer, the fixed magnetic layer is arranged above the tunneling layer, and the magnetic pinning layer is arranged on Above the fixed magnetic layer;
- the tunneling layer is used to increase the tunneling magnetoresistance ratio provided by the fixed magnetic layer, the tunneling layer, and the second magnetic free layer, so as to read the magnetization state of the second magnetic free layer ;
- the fixed magnetic layer and the magnetic pinned layer have perpendicular magnetic anisotropy.
- the magnetic pinning layer is antiferromagnetically coupled with the fixed magnetic layer, and the magnetic pinning layer is used to fix the magnetization direction of the fixed magnetic layer.
- the first magnetic free layer and the The magnetization directions of the second magnetic free layer are all reversed.
- the magnetization directions of the first magnetic free layer and the second magnetic free layer are both reversed.
- the first magnetic free layer and the second magnetic free layer are all reversed.
- the resistance is read, and the second can be determined according to the resistance.
- the direction of magnetization of the magnetic free layer is read, and the second can be determined according to the resistance.
- a magnetic memory in another aspect of the present application, includes the spin-orbit moment magnetic device described in any one of the above.
- another magnetic memory is provided, and the magnetic memory includes the magnetic tunnel junction device described in any one of the above.
- FIG. 1 is a schematic structural diagram of a spin-orbit moment magnetic device according to an embodiment of the present application
- FIG. 2 is a schematic structural diagram of a spin-orbit moment magnetic device according to another embodiment of the present application.
- FIG. 3 is a schematic structural diagram of a magnetic tunnel junction device according to an embodiment of the present application.
- the purpose of this application is to provide a spin-orbit moment magnetic device with high flipping efficiency, which helps to improve the read and write efficiency of magnetic memory.
- FIG. 1 is a schematic structural diagram of a spin-orbit moment magnetic device according to an embodiment of the present application.
- the spin-orbit moment magnetic device of the present application includes: a first magnetic free layer 101 and a metal coupling layer 102 And the second magnetic free layer 103.
- the metal coupling layer 102 is disposed above the first magnetic free layer 101
- the second magnetic free layer 103 is disposed above the metal coupling layer 102.
- the first magnetic free layer 101 and the second magnetic free layer 103 have ferromagnetism or ferrimagnetism, and both have perpendicular magnetic anisotropy (Perpendicular Magnetic Anisotropy, PMA).
- the anisotropy is the magnetic anisotropy perpendicular to the film plane of the first magnetic free layer 101 and the second magnetic free layer 103.
- the metal coupling layer 102 provides exchange interaction, so that the first magnetic free layer 101 and the second magnetic free layer 103 realize antiferromagnetic coupling.
- the antiferromagnetic coupling strength of the first magnetic free layer 101 and the second magnetic free layer 103 can be adjusted by the material and thickness of the metal coupling layer 102.
- the material used for the first magnetic free layer 101 and the second magnetic free layer 103 may be at least one of the following materials or an alloy composed of at least one of the following materials: cobalt, Co, Nickel Ni, iron Fe, cobalt-iron-boron CoFeB with any composition ratio, cobalt-terbium CoTb with any composition ratio, and Hesler alloy with a composition ratio of approximately Co2XAl, where the element X includes iron Fe, manganese Mn.
- the material used is one of cobalt-iron-boron CoFeB with any composition ratio, cobalt-terbium CoTb with any composition ratio, and Heusler alloy with a composition ratio of approximately Co2XAl.
- the first magnetic free layer 101 and the second magnetic free layer 103 may adopt a multilayer film structure, and the material used for each film layer in the multilayer film structure may be at least one of the following materials Or an alloy composed of at least one of the following materials: cobalt Co, iron Fe, nickel Ni, cobalt platinum multilayer film [Co/Pt]n and cobalt nickel multilayer film [Co/Ni]n, preferably cobalt platinum Multilayer film [Co/Pt]n or cobalt nickel multilayer film [Co/Ni]n, where n is a natural number.
- the thickness of the first magnetic free layer 101 and the second magnetic free layer 103 is less than or equal to 10 nm.
- the material used for the metal coupling layer 102 may be at least one of the following materials or an alloy composed of at least one of the following materials: ruthenium Ru, tungsten W, hafnium Hf, iridium Ir, Tantalum Ta, molybdenum Mo, platinum Pt, titanium Ti, palladium Pd, chromium Cr, preferably ruthenium Ru, iridium Ir.
- the metal coupling layer 102 may also adopt a multilayer film structure, and the material used for each film layer in the multilayer film structure may be at least one of the following materials or at least one of the following materials: Kinds of alloys: ruthenium Ru, tungsten W, hafnium Hf, iridium Ir, tantalum Ta, molybdenum Mo, platinum Pt, titanium Ti, palladium Pd, chromium Cr.
- the thickness of the metal coupling layer 102 is less than or equal to 2 nm.
- the first magnetic free layer 101 and the second magnetic free layer 103 have perpendicular magnetic anisotropy, and the metal coupling layer 102 provides exchange interaction to make the first magnetic The free layer 101 and the second magnetic free layer 103 realize antiferromagnetic coupling.
- the spin-orbit coupling (Spin Orbit Coupling) inside the first magnetic free layer 101 and the second magnetic free layer 103 , SOC) generates a spin current in a vertical direction
- the spin flow on the lower surface of the first magnetic free layer 101 and the upper surface of the second magnetic free layer 103 generates spin accumulation with opposite polarization directions.
- the accumulation of spins on the lower surface of the first magnetic free layer 101 and the upper surface of the second magnetic free layer 103 together drive the magnetization directions of the first magnetic free layer 101 and the second magnetic free layer 103 to be reversed.
- the solution of the present invention for performing magnetization reversal through spin accumulation of upper and lower two-layer interfaces has higher magnetization reversal efficiency and speed.
- an external magnetic field roughly parallel to the in-plane direction can also be applied outside the spin-orbit moment magnetic device to further improve the magnetization reversal efficiency of the first magnetic free layer 101 and the second magnetic free layer 103. speed.
- the lower surface of the first magnetic free layer 101 and the upper surface of the second magnetic free layer 103 jointly drive the magnetization directions of the first magnetic free layer and the second magnetic free layer by spin accumulation Both flip.
- the external magnetic field is less than or equal to 1T.
- the in-plane direction in the present application refers to the direction parallel to the film surface of the first magnetic free layer 101, the metal coupling layer 102, and the second magnetic free layer 103
- the in-plane direction substantially parallel to the in-plane direction refers to The included angle between the in-plane directions is less than a preset value, and the preset value may be 30 degrees.
- the vertical direction in this application refers to the direction perpendicular to the in-plane direction.
- FIG. 2 is a schematic structural diagram of a spin orbit moment magnetic device according to another embodiment of the present application. As shown in FIG. 2, the spin orbit moment magnetic device of the embodiment in FIG. A substrate layer 201 is added on top, and the substrate layer 201 is disposed under the first magnetic free layer 101.
- the substrate layer 201 is used for spin absorption and spin scattering, and its function is to adjust the spin accumulation on the lower surface of the first magnetic free layer 101, that is, to absorb and scatter the first magnetic layer.
- the spin current generated by the free layer 101 is not limited to, but not limited to, to, to, to, to absorb and scatter the first magnetic layer.
- the substrate layer 201 also has antiferromagnetism, which functions to provide an exchange bias to form a symmetrical destruction field.
- antiferromagnetism In the case that the substrate layer has antiferromagnetism, there is no need to apply an external magnetic field substantially parallel to the in-plane direction. Only the spin-orbit moment magnetic device of the embodiment in FIG. When the current is greater than the threshold current required for reversal, the magnetization directions of the first magnetic free layer 101 and the second magnetic free layer 103 are both reversed.
- the material used for the substrate layer 201 may be at least one of the following materials or an alloy composed of at least one of the following materials: tungsten W, tantalum Ta, molybdenum Mo, platinum Pt, titanium Ti, palladium Pd, chromium Cr, ruthenium Ru, hafnium Hf, iridium Ir, iron Fe, manganese Mn, gold Au, silver Ag, preferably ruthenium Ru, tantalum Ta, molybdenum Mo.
- the substrate layer 201 may also adopt a multilayer film structure, and the materials used for each film layer in the multilayer film structure may be at least one of the following materials or at least one of the following materials Component alloys: tungsten W, tantalum Ta, molybdenum Mo, platinum Pt, titanium Ti, palladium Pd, chromium Cr, ruthenium Ru, hafnium Hf, iridium Ir, iron Fe, manganese Mn, gold Au, silver Ag.
- Component alloys tungsten W, tantalum Ta, molybdenum Mo, platinum Pt, titanium Ti, palladium Pd, chromium Cr, ruthenium Ru, hafnium Hf, iridium Ir, iron Fe, manganese Mn, gold Au, silver Ag.
- FIG. 3 is a schematic structural diagram of a magnetic tunnel junction device of an embodiment of the present application.
- the magnetic tunnel junction device of the present application includes: a device composed of a tunneling layer 301, a fixed magnetic layer 302, and a magnetic pinning layer 303 Part and the lead layer part composed of the spin-orbit moment magnetic device 10 of the embodiment of FIG. 1 or the spin-orbit moment magnetic device 20 of the embodiment of FIG. 2 described above.
- the tunneling layer 301 is disposed above the second magnetic free layer 103 in the lead layer portion 10 or 20
- the fixed magnetic layer 302 is disposed above the tunneling layer 301
- the magnetic pinning layer 303 is arranged above the fixed magnetic layer 302.
- the tunneling layer 301 is used to separate the fixed magnetic layer 302 and the second magnetic free layer 103, and is used to increase the tunneling magnetoresistance ratio provided by the fixed magnetic layer 302, the tunneling layer 301, and the second magnetic free layer 103, so that reading The resistance value of is more obvious, and it is easier to read the magnetization state of the second magnetic free layer 103.
- the material used for the tunnel layer 301 may be at least one of the following materials or an alloy composed of at least one of the following materials: aluminum Al, magnesium Mg, copper Cu, fluorine F, Lithium Li and magnesium oxide MgO are preferably magnesium oxide MgO.
- the tunneling layer 301 may adopt a multilayer film structure, and the material used for each film layer in the multilayer film structure may be at least one of the following materials or at least one of the following materials: Alloys composed of three types: aluminum Al, magnesium Mg, magnesium oxide MgO, copper Cu, fluorine F, and lithium Li, preferably magnesium Mg or magnesium oxide MgO.
- the fixed magnetic layer 302 has perpendicular magnetic anisotropy, and the fixed magnetic layer 302 together with the tunneling layer 301 and the second magnetic free layer 103 provide a tunneling magnetoresistance effect for reading the magnetization state of the second magnetic free layer 103 layer.
- the magnetic pinned layer 303 has perpendicular magnetic anisotropy, and the magnetic pinned layer 303 is antiferromagnetically coupled with the fixed magnetic layer 302, and its purpose is to fix the magnetization direction of the fixed magnetic layer 302.
- the structure and material selection of the fixed magnetic layer 302 and the magnetic pinned layer 303 may be the same as those of the first magnetic free layer 101 and the second magnetic free layer 103.
- the shape of the tunnel layer 301, the fixed magnetic layer 302, and the magnetic pinned layer 303 may be a circle, an ellipse, a rectangle, a rhombus, a triangle, and a polygon.
- the preparation process includes deposition, photolithography, etching, stripping and other processes known in the art.
- the present application may use the spin orbit moment magnetic device 10 of the embodiment of FIG. 1 or the spin orbit moment magnetic device 20 of the embodiment of FIG. 2 as the lead layer portion of the magnetic tunnel junction device. Utilizing the inverse coupling between the first magnetic free layer 101 and the second magnetic free layer 103, the tunneling magnetoresistance ratio of the magnetic tunnel junction is improved, making the data of the magnetic device easier to read.
- the data reading method of the magnetic tunnel junction device of the present application is to read the resistance between the upper end of the magnetic pinning layer 303 and any one of the left and right ends of the lead layer portion, and judge the "0" or "of the data by the resistance value. 1".
- the writing method of the magnetic tunnel junction device of the present application includes: passing a current between the two ends of the lead layer portion, and at the same time, optionally applying an external magnetic field roughly parallel to the in-plane direction, and the size of the external magnetic field can be greater than or equal to 0 and less than Equal to 1T, when the applied current is greater than the threshold current required for reversal, the magnetization directions of the first magnetic free layer 101 and the second magnetic free layer 103 are both reversed.
- the substrate layer has antiferromagnetism
- there is no need to apply an external magnetic field that is, the magnitude of the external magnetic field is equal to 0, and only when the current is greater than the threshold current required for switching between the two ends of the lead layer part ,
- the magnetization directions of the first magnetic free layer 101 and the second magnetic free layer 103 are both reversed.
- the mechanism by which a current is passed between the two ends of the lead layer portion to perform the flip is Spin Orbit Torque (SOT).
- the writing method of the magnetic tunnel junction device of the present application further includes: passing a current between the upper end of the magnetic pinning layer 303 and any one of the left and right ends of the lead layer portion, when the passing current is greater than the threshold current required for switching ,
- the magnetization directions of the first magnetic free layer 101 and the second magnetic free layer 103 are both reversed.
- an external magnetic field roughly parallel to the in-plane direction can also be selected at the same time.
- the size of the external magnetic field can be greater than or equal to 0 and less than or equal to 1T, which improves the speed and efficiency of the flipping of the first magnetic free layer 101 and the second magnetic free layer 103.
- the mechanism of this part of the flip is that spin-orbit moment (Spin Orbit Torque, SOT), spin transfer torque (Spin Transfer Torque, STT), and voltage controlled magnetic anisotropy (Voltage Controlled Magnetic Anisotropy, VCMA) cooperatively drive the flip.
- SOT spin Orbit Torque
- STT spin Transfer Torque
- VCMA Voltage Controlled Magnetic Anisotropy
- the lead layer portion of the magnetic tunnel junction device adopts the structure of the spin-orbital moment magnetic device 10 of the embodiment in FIG. 1, and the specific structure of the spin-orbital moment magnetic device 10 is: first magnetic freedom Layer 101 is FePt FePt (3nm) with L10 crystal orientation and has perpendicular magnetic anisotropy; metal coupling layer 102 is Ir with a thickness of 0.4nm; second magnetic free layer 103 is cobalt-iron-boron Co20Fe60B20 with a thickness It is 1nm and has perpendicular magnetic anisotropy.
- first magnetic freedom Layer 101 is FePt FePt (3nm) with L10 crystal orientation and has perpendicular magnetic anisotropy
- metal coupling layer 102 is Ir with a thickness of 0.4nm
- second magnetic free layer 103 is cobalt-iron-boron Co20Fe60B20 with a thickness It is 1nm and has perpendicular magnetic anisotropy.
- the tunneling layer 301 is magnesium oxide MgO with a thickness of 1nm;
- the fixed magnetic layer 302 is cobalt-iron-boron Co20Fe60B20 with a thickness of 1.3nm, has perpendicular magnetic anisotropy, and the initial magnetization direction is upward;
- the magnetic pinning layer 303 is made of cobalt Magnetic pinning layer composed of Co platinum Pt multilayer film and ruthenium Ru coupling layer [Co(0.35nm)/Pt(0.6nm)] ⁇ 5/Ru(0.4nm)/[Co(0.35nm)/Pt(0.6nm) )] ⁇ 3/Ru(0.4nm), with perpendicular magnetic anisotropy.
- the tunneling layer 301, the fixed magnetic layer 302, and the magnetic pinning layer 303 are circular, with a diameter of 20 nm, and the width of the lead layer is 30 nm.
- the applied direction is a 200 Oe external magnetic field that is approximately parallel to the direction of the lead layer in the plane
- a current is applied between the upper end of the magnetic pinning layer 303 and one end of the lead layer portion, when the applied current is greater than the threshold current required for inversion ,
- the magnetic properties of the first magnetic free layer 101 and the second magnetic free layer 103 are both reversed or maintained in a certain direction.
- the first magnetic free layer 101 and the second magnetic free layer The magnetic properties of the layer 103 are all flipped to or maintained in the other direction.
- the resistance values of the magnetic tunnel junction devices corresponding to the two equilibrium states are different.
- a magnetic memory which includes the spin-orbit moment magnetic device described in any of the above embodiments.
- another magnetic memory is provided, and the magnetic memory includes the magnetic tunnel junction device described in any of the above-mentioned embodiments.
Landscapes
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Description
Claims (11)
- 一种自旋轨道矩磁性器件,其特征在于,包括:第一磁性自由层、金属耦合层以及第二磁性自由层,所述金属耦合层设置在所述第一磁性自由层的上方,所述第二磁性自由层设置在所述金属耦合层的上方;所述第一磁性自由层和所述第二磁性自由层具有垂直磁各向异性;所述金属耦合层用于提供交换相互作用以使所述第一磁性自由层和所述第二磁性自由层实现反铁磁耦合。
- 根据权利要求1所述的自旋轨道矩磁性器件,其特征在于,当所述自旋轨道矩磁性器件通入大致平行于面内方向的电流时,所述第一磁性自由层和所述第二磁性自由层内部产生垂直方向的自旋流,所述自旋流于所述第一磁性自由层的下表面和所述第二磁性自由层的上表面产生极化方向相反的自旋累积,所述自旋累积用于驱动所述第一磁性自由层和所述第二磁性自由层的磁化方向翻转。
- 根据权利要求1所述的自旋轨道矩磁性器件,其特征在于,还包括:设置在所述第一磁性自由层下方的衬底层;所述衬底层用于吸收并散射所述第一磁性自由层产生的自旋流。
- 根据权利要求3所述的自旋轨道矩磁性器件,其特征在于,所述衬底层具有反铁磁性,用于形成对称破坏场。
- 一种磁性隧道结器件,其特征在于,包括:由隧穿层、固定磁性层和磁性钉扎层组成的器件部分以及由权利要求1至4任意之一所述的自旋轨道矩磁性器件组成的引线层部分;所述隧穿层设置在所述第二磁性自由层的上方,所述固定磁性层设置在所述隧穿层的上方,所述磁性钉扎层设置在所述固定磁性层的上方;所述隧穿层用于增加所述固定磁性层、所述隧穿层以及所述第二磁性自由层共同提供的隧穿磁阻比率,用以读取所述第二磁性自由层的磁化状态;所述固定磁性层和所述磁性钉扎层具有垂直磁各向异性。
- 根据权利要求5所述的磁性隧道结器件,其特征在于,所述磁性钉扎层与所述固定磁性层反铁磁耦合,所述磁性钉扎层用于固定所述固定磁性层的磁化方向。
- 根据权利要求6所述的磁性隧道结器件,其特征在于,在外加大致平行于面内方向的磁场的条件下,若在所述引线层部分的两端之间通入大于翻转所需阈值电流的电流,所述第一磁性自由层和所述第二磁性自由层的磁化方向均翻转。
- 根据权利要求6所述的磁性隧道结器件,其特征在于,若在所述引线层部分的两端之间通入大于翻转所需阈值电流的电流,所述第一磁性自由层和所述第二磁性自由层的磁化方向均翻转。
- 根据权利要求6所述的磁性隧道结器件,其特征在于,若在所述磁性钉扎层的上端与所述引线层部分的任意一端之间通入大于翻转所需阈值电流的电流,所述第一磁性自由层和所述第二磁性自由层的磁化方向均翻转。
- 一种磁存储器,其特征在于,包括根据权利要求1至4任意之一所述的自旋轨道矩磁性器件。
- 一种磁存储器,其特征在于,包括根据权利要求5至9任意之一所述的磁性隧道结器件。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/089143 WO2021223207A1 (zh) | 2020-05-08 | 2020-05-08 | 自旋轨道矩磁性器件、磁性隧道结器件及磁存储器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/089143 WO2021223207A1 (zh) | 2020-05-08 | 2020-05-08 | 自旋轨道矩磁性器件、磁性隧道结器件及磁存储器 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2021223207A1 true WO2021223207A1 (zh) | 2021-11-11 |
Family
ID=78468594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2020/089143 WO2021223207A1 (zh) | 2020-05-08 | 2020-05-08 | 自旋轨道矩磁性器件、磁性隧道结器件及磁存储器 |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2021223207A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117500281A (zh) * | 2024-01-02 | 2024-02-02 | 致真存储(北京)科技有限公司 | 磁存储器及其制备方法、电子设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040222450A1 (en) * | 2003-05-05 | 2004-11-11 | David Tsang | MRAM architecture with a bit line located underneath the magnetic tunneling junction device |
CN105702853A (zh) * | 2016-03-04 | 2016-06-22 | 北京航空航天大学 | 一种自旋转移矩磁存储单元 |
CN109037434A (zh) * | 2018-07-06 | 2018-12-18 | 西安交通大学 | 基于人工反铁磁自由层的隧道结器件及磁性随机存储装置 |
-
2020
- 2020-05-08 WO PCT/CN2020/089143 patent/WO2021223207A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040222450A1 (en) * | 2003-05-05 | 2004-11-11 | David Tsang | MRAM architecture with a bit line located underneath the magnetic tunneling junction device |
CN105702853A (zh) * | 2016-03-04 | 2016-06-22 | 北京航空航天大学 | 一种自旋转移矩磁存储单元 |
CN109037434A (zh) * | 2018-07-06 | 2018-12-18 | 西安交通大学 | 基于人工反铁磁自由层的隧道结器件及磁性随机存储装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117500281A (zh) * | 2024-01-02 | 2024-02-02 | 致真存储(北京)科技有限公司 | 磁存储器及其制备方法、电子设备 |
CN117500281B (zh) * | 2024-01-02 | 2024-04-12 | 致真存储(北京)科技有限公司 | 磁存储器及其制备方法、电子设备 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5623507B2 (ja) | スピントルクの切換を補助する層を有する、スピントルクの切換を持つ磁気積層体 | |
EP2342714B1 (en) | Reducing spin pumping induced damping of a free layer of a memory device | |
US7307876B2 (en) | High speed low power annular magnetic devices based on current induced spin-momentum transfer | |
JP5224127B2 (ja) | 磁気抵抗効果素子、および磁気ランダムアクセスメモリ | |
JP3863536B2 (ja) | 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ書き込み方法 | |
JP5383882B1 (ja) | 不揮発性記憶装置 | |
CN106953005B (zh) | 磁性元件和存储装置 | |
US11776726B2 (en) | Dipole-coupled spin-orbit torque structure | |
KR102684723B1 (ko) | 자기접합 및 하이브리드 캡핑층을 갖는 자기장치, 이를 이용하는 자기메모리 및 자기장치의 제공방법 | |
US20130059168A1 (en) | Magnetoresistance Device | |
JP5104753B2 (ja) | 磁気ランダムアクセスメモリ及びその製造方法 | |
US20190189908A1 (en) | Heterostructures for Electric Field Controlled Magnetic Tunnel Junctions | |
JP2012519963A (ja) | 垂直異方性を有するst−ramセル | |
WO2014089182A1 (en) | A nonvolatile magnetic logic device | |
WO2014050379A1 (ja) | 記憶素子、記憶装置、磁気ヘッド | |
WO2020215610A1 (zh) | 磁性随机存储器的磁隧道结器件 | |
KR20180061555A (ko) | 자기 메모리 소자 및 자기 메모리 소자의 쓰기 방법 | |
EP2887410A1 (en) | Magnetic multilayer stack | |
US8565010B2 (en) | Magnetic random access memory with field compensating layer and multi-level cell | |
TWI278989B (en) | Magnetic random access memory with lower switching field through indirect exchange coupling | |
WO2021223207A1 (zh) | 自旋轨道矩磁性器件、磁性隧道结器件及磁存储器 | |
TWI324770B (zh) | ||
CN110993782A (zh) | 基于钙钛矿型异质结衬底及锯齿型隧穿异质结的自旋轨道动量矩磁存储器 | |
TWI790839B (zh) | 平面式磁化自旋軌道磁性元件 | |
KR102442286B1 (ko) | 스핀궤도 토크 메모리 소자 및 이의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20934709 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20934709 Country of ref document: EP Kind code of ref document: A1 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20934709 Country of ref document: EP Kind code of ref document: A1 |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 16.05.2023 DATED 16.05.2023) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20934709 Country of ref document: EP Kind code of ref document: A1 |